TW201127766A - Method of manufacturing an anti-glare glass - Google Patents
Method of manufacturing an anti-glare glass Download PDFInfo
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- TW201127766A TW201127766A TW99141117A TW99141117A TW201127766A TW 201127766 A TW201127766 A TW 201127766A TW 99141117 A TW99141117 A TW 99141117A TW 99141117 A TW99141117 A TW 99141117A TW 201127766 A TW201127766 A TW 201127766A
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- glass substrate
- coating layer
- ceramic coating
- surface roughness
- etchant
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2204/00—Glasses, glazes or enamels with special properties
- C03C2204/08—Glass having a rough surface
Abstract
Description
201127766 i w 六、發明說明： 【發明所屬之技術領威】 實施例為關於製造防光眩玻璃之方法’尤其疋關於防 止玻璃基板產生光眩之製造防光眩玻璃之方法。 【先前技術】 一般而言，因光線反射而於玻璃基板上產生光眩。為 了防止玻璃基板之光眩’玻璃基板之表面藉由各種方法來 處理。 首先，表面粗糙結構能藉由使用姓刻劑（或钮刻溶液） 触刻玻璃基板之表面而形成於玻璃基板上。由表面粗輪結 構所造成的漫反射能防止玻璃基板之光眩。然而’仍存在 有難以控制玻璃基板之表面粗糙結構的粗糙度的問題。 此外，能藉由貼附防光眩薄膜以折射玻璃基板之表面 上的光線來防止光眩。然而，因高折射薄膜及低折射薄犋 必須交錯貼附於玻璃基板，而可能增加玻璃基板的單位成 本。 【發明内容】 根據實施例之一方面，提供一種製造防光眩玻璃之方 法。於製造防光眩玻璃之方法中，於玻璃基板上形成具有 均勻厚度之陶瓷塗佈層。第一表面粗糙結構係藉由第一蝕 刻劑來從玻璃基板分離陶瓷塗佈層，而形成於玻璃基板 上，且第二表面粗糙結構係藉由第二蝕刻劑蝕刻玻璃基 板，而形成於玻璃基板上。 201127766 · ·201127766 i w VI. Description of the Invention: [Technology Leading to Invention] The embodiment is a method for manufacturing an anti-glare glass, particularly a method for producing an anti-glare glass for preventing glare from being caused by a glass substrate. [Prior Art] In general, light glare is generated on a glass substrate due to light reflection. In order to prevent glare of the glass substrate, the surface of the glass substrate is treated by various methods. First, the surface roughness can be formed on the glass substrate by touching the surface of the glass substrate with a surname (or a button solution). The diffuse reflection caused by the surface coarse wheel structure prevents glare of the glass substrate. However, there is still a problem that it is difficult to control the roughness of the surface roughness of the glass substrate. Further, glare can be prevented by attaching an anti-glare film to refract light on the surface of the glass substrate. However, since the high refractive film and the low refractive thin film must be staggered to the glass substrate, the unit cost of the glass substrate may increase. SUMMARY OF THE INVENTION According to an aspect of an embodiment, a method of manufacturing an anti-glare glass is provided. In the method of manufacturing a light-proof glare glass, a ceramic coating layer having a uniform thickness is formed on a glass substrate. The first surface roughness structure is formed on the glass substrate by separating the ceramic coating layer from the glass substrate by the first etchant, and the second surface roughness structure is formed on the glass by etching the glass substrate by the second etchant. On the substrate. 201127766 · ·
TW7254PA 於實施例中，陶瓷塗佈層能藉由熱嘴塗層處理 (thermal spray coating process )形成。 於實施例中’於熱喷塗層處理中能調整陶瓷粉末之粒 子尺寸，以控制第一表面粗糖結構的粗糖度。 於實施例中’陶兗粉末之粒子尺寸能為約2〇微来 (μιη)至約 30 μιη。 於實施例中，陶瓷塗佈層之厚度能為約1〇0扣至約 25 μιη ° 於實施例中，分離陶瓷塗佈層之步驟，能包含浸泡形 成有陶瓷塗佈層之玻璃基板於第一蝕刻劑中，或者$含噴 灑第一蝕刻劑至形成有陶瓷塗佈層之玻璃基板上。3 於實施例中，第一蝕刻劑能包含氫氟酸、硝酸及水的 混合溶液，且氫氟酸、硝酸及水之重量百分比為約5〜約 10 :約10〜約30 :約60〜約85。 於實施例中，蝕刻玻璃基板之步驟，能包含浸泡具有 第一表面粗糙結構之玻璃基板於第二蝕刻劑中，或者包含 喷灑第二蝕刻劑至具有第一表面粗糙結構之玻璃基板。 於實施例中，第二蝕刻劑能包含氮氟酸、鹽酸、硝酸 及水的混合溶液，且氫氟酸、鹽酸、硝酸及水之重量百分 比為約30〜約70 :約1〇〜約2〇 :約〇 5〜約5 :約5〜約 59.5。 於實施例中’第一表面粗糙結構能具有為約1 μιη至 約2 μιη之十點平均粗縫度（height 〇f irregularity’Rz)’且第二表面粗糙結構能具有為約〇.6μιη 至約1.3哗之十點平均粗糙度（Κζ〕。 201127766 1 w 根據本發明之實施例，能藉由蝕刻經過熱喷塗層處理 而形成之陶瓷塗佈層，而於玻璃基板之表面上形成第一表 面粗糙結構。而且，能藉由蝕刻具有第一表面粗糙結構之 玻璃基板，而於玻璃基板之表面上均勻地形成第二表面粗 糙結構。因此，能防止玻璃基板之光眩。 更甚者，能藉由調整熱喷塗層處理中之陶瓷粉末之粒 子尺寸，而輕易控制玻璃基板上之表面粗糙結構的粗糙 度。 【實施方式】 從以下詳述之實施方式結合後附圖式，將更清楚瞭解 示範的實施例。 各種實施例將參照後附圖式於此後更加充分描述，圖 式中顯示一些實施例。然而，本發明能以許多不同的形式 實施，而不應解釋為限定於提出於此之實施例。相反地， 提供此些實施例以使揭露内容將詳盡且完整，並將充分傳 達本發明之範疇給熟習此項技藝者。為求簡明，可能誇大 圖式中層及區域之尺寸及相對尺寸。 將瞭解到，雖然於此能使用術語第一、第二等術語以 描述各種元件、部件、區域、層及/或區塊，此些元件、 部件、區域、層及/或區塊不應受限由此些術語。此些術 語僅用於分別一個元件、部件、區域、層或區塊與另一個 元件、部件、區域、層或區塊。因此，在不悖離本發明之 教示下，討論如下之第一元件、部件、區域、層或區塊， 能稱為第二元件、部件、區域、層或區塊。 201127766TW7254PA In an embodiment, the ceramic coating layer can be formed by a thermal spray coating process. In the examples, the particle size of the ceramic powder can be adjusted in the thermal spray coating treatment to control the coarse sugar content of the first surface raw sugar structure. In the examples, the particle size of the ceramic powder can be from about 2 micron to about 30 μm. In an embodiment, the thickness of the ceramic coating layer can be from about 1 〇0 to about 25 μηη. In the embodiment, the step of separating the ceramic coating layer can include immersing the glass substrate formed with the ceramic coating layer. In an etchant, or containing a first etchant sprayed onto the glass substrate on which the ceramic coating layer is formed. In the embodiment, the first etchant can comprise a mixed solution of hydrofluoric acid, nitric acid and water, and the weight percentage of hydrofluoric acid, nitric acid and water is from about 5 to about 10: from about 10 to about 30: about 60~ About 85. In an embodiment, the step of etching the glass substrate may include immersing the glass substrate having the first surface roughness in the second etchant or spraying the second etchant to the glass substrate having the first surface roughness. In an embodiment, the second etchant can comprise a mixed solution of hydrofluoric acid, hydrochloric acid, nitric acid, and water, and the weight percentage of hydrofluoric acid, hydrochloric acid, nitric acid, and water is from about 30 to about 70: from about 1 Torr to about 2 〇: about 5 to about 5: about 5 to about 59.5. In the embodiment, the first surface roughness structure can have a height 〇f irregularity 'Rz' of about 1 μm to about 2 μηη and the second surface roughness structure can have a height of about 〇6 μιη to An average roughness (Κζ) of about 1.3 。. 201127766 1 w According to an embodiment of the present invention, a ceramic coating layer formed by etching a thermal spray layer can be formed on the surface of the glass substrate. A surface rough structure. Further, the second surface roughness can be uniformly formed on the surface of the glass substrate by etching the glass substrate having the first surface roughness. Therefore, the glare of the glass substrate can be prevented. The roughness of the surface roughness structure on the glass substrate can be easily controlled by adjusting the particle size of the ceramic powder in the thermal spray coating treatment. [Embodiment] The embodiments described in detail below will be combined with the following figures. The exemplary embodiments will be more clearly understood. Various embodiments will be more fully described hereinafter with reference to the accompanying drawings, in which FIG. The present invention is not limited to the embodiments disclosed herein. Instead, the embodiments are provided so that the disclosure will be thorough and complete, and will fully convey the scope of the present invention to those skilled in the art. For the sake of brevity, the dimensions and relative dimensions of the layers and regions in the drawings may be exaggerated. It will be understood that the terms first, second, etc. may be used to describe various elements, components, regions, layers and/or blocks. The elements, components, regions, layers, and/or blocks are not limited to the terms. The terms are used only for one component, component, region, layer or block and another component, component, region. The following elements, components, regions, layers or blocks may be referred to as a second element, component, region, layer or block, without departing from the teachings of the invention. 201127766
TW7254PA 使用於此之術語，僅用於描述特定實施例之目的，而 非有意於限定本發明。除非上下文中清楚註明，否則此處 所用之單數形式「一」及「此」，亦有意於包含複數形式。 更將理解用於此說明書中之術語「包括」及/或「包含」 指出所敘述之特徵、整合、步驟、操作、元件及/或部件 之存在，但並非排除一個多個特徵、整合、步驟、操作、 元件、組件及/或其組合之存在。 除非另外定義，於此使用之所有術語（包含技術及科 學術語），係與本發明所屬技術領域具通常知識者所暸解 之意義相同。除非於此特別定義，否則將進一步瞭解到， 例如由普通字典所定義之術語，應解釋為具有與相關技藝 之上下文中之意義一致的意義，而將不解釋為理想化或過 度正式之意思。 此後，將參照所附圖式而詳加說明各個實施例。 第1圖繪示用以說明本發明一實施例之製造防光眩 玻璃之方法之流程圖。而且，第2至6圖繪示用以說明第 1圖中之製造防光眩玻璃之方法之剖視圖。 請參照第1及2圖，電漿槍10能包含陰極12、陽極 14、外圍件15、支撐件16及粉末入口 17。電漿氣體經過 形成於電漿槍10内之氣體入口 11而被注入。電漿氣體能 例如為氬氣、氦氣等之惰性氣體（inert gas)，或者例如為 氫氣、氧氣等之非活性氣體（inactive gas )。惰性氣體及非 活性氣體能單獨使用或混合使用。 於一實施例中，氣體入口 11能形成於外圍件15及陰 極12之間，且能延伸至由陽極14形成的狹窄空間。注入 201127766 1 w 於氣體入口 11内之電漿氣體能藉由產生於陰極12及陽極 14之間之高壓AC高電源，而被轉換為電漿火花18，且此 時，電漿火花18能從電漿槍10喷發。 於此，高壓AC高電源能具有足以將電漿氣體轉換為 電漿火花18之高數值。於一實施例中，能施加約30KV 至約100KV之電壓，以及約400A至約1000A之電流。 如第2圖所示，陰極12之頂端能為銳利的形狀，以 易於產生電漿火花18。進一步而言，陰極12之頂端能包 含具有高強度及硬度之金屬，如鎢或鎢強化金屬等金屬， 以防止如由產生電漿火花18所造成之侵蝕的傷害。 一般而言，能使用如銅或銅合金之導電材料來形成陽 極14。此外，冷卻通道13能形成於陽極14的内部，而使 得施加於陽極14之熱能夠經由冷卻通道13往外部發散。 因此，能藉由冷卻通道13將陽極14之熱傷害減到最小， 因而能延長陽極14之使用壽命。 外圍件15能位於電漿搶10之外部，且陰極12能位 於外部件15之内部。外圍件15能支撐陽極14。亦能使用 將由產生電漿火花18所造成之熱傷害降至最低之材料， 來形成外圍件15。 支撐件16能結合至外圍件15之一側，且粉末入口 17能位於支撐件16中。陶瓷粉末能經由粉末入口 17供應 至電漿火花18。經由粉末入口 17供應至電漿火花18之陶 瓷粉末，能熔化並喷灑至面對電漿槍10之玻璃基板100 上。 經喷灑之陶瓷粉末能貼附於玻璃基板1〇〇上，以形成 201127766 .The term TW7254PA is used herein to describe the specific embodiments only, and is not intended to limit the invention. The singular forms "a" and "the" are used in the s The term "comprising" and / or "comprising", as used in this specification, is intended to mean the presence of features, integration, steps, operations, components and/or components described herein, but does not exclude a plurality of features, The existence of operations, components, components, and/or combinations thereof. Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning meaning Unless otherwise specifically defined herein, it will be further appreciated that terms such as those defined by ordinary dictionaries should be interpreted as having a meaning consistent with the meaning of the relevant art and are not to be construed as ideal or excessively formal. Hereinafter, various embodiments will be described in detail with reference to the drawings. Fig. 1 is a flow chart showing a method of manufacturing an antiglare glass according to an embodiment of the present invention. Further, Figs. 2 to 6 are cross-sectional views for explaining the method of manufacturing the antiglare glass in Fig. 1. Referring to Figures 1 and 2, the plasma gun 10 can include a cathode 12, an anode 14, a peripheral member 15, a support member 16, and a powder inlet 17. The plasma gas is injected through a gas inlet 11 formed in the plasma gun 10. The plasma gas can be, for example, an inert gas such as argon gas or helium gas, or an inert gas such as hydrogen gas or oxygen gas. The inert gas and the inert gas can be used singly or in combination. In one embodiment, the gas inlet 11 can be formed between the peripheral member 15 and the cathode 12 and can extend to a narrow space formed by the anode 14. The plasma gas injected into the gas inlet 11 can be converted into a plasma spark 18 by a high voltage AC high power source generated between the cathode 12 and the anode 14, and at this time, the plasma spark 18 can be The plasma gun 10 erupts. Here, the high voltage AC high power source can have a high value sufficient to convert the plasma gas to the plasma spark 18. In one embodiment, a voltage of from about 30 KV to about 100 KV, and a current of from about 400 A to about 1000 A can be applied. As shown in Fig. 2, the tip end of the cathode 12 can have a sharp shape to easily generate the plasma spark 18. Further, the top end of the cathode 12 can contain a metal having high strength and hardness, such as a metal such as tungsten or tungsten reinforced metal, to prevent damage caused by the erosion caused by the plasma spark 18. In general, the anode 14 can be formed using a conductive material such as copper or a copper alloy. Further, the cooling passage 13 can be formed inside the anode 14, so that heat applied to the anode 14 can be diverged to the outside via the cooling passage 13. Therefore, the thermal damage of the anode 14 can be minimized by the cooling passage 13, thereby extending the service life of the anode 14. The peripheral member 15 can be located outside of the plasma grab 10 and the cathode 12 can be positioned inside the outer member 15. The peripheral member 15 can support the anode 14. The peripheral member 15 can also be formed using a material that minimizes thermal damage caused by the generation of the plasma spark 18. The support member 16 can be coupled to one side of the peripheral member 15, and the powder inlet 17 can be located in the support member 16. The ceramic powder can be supplied to the plasma spark 18 via the powder inlet 17. The ceramic powder supplied to the plasma spark 18 via the powder inlet 17 can be melted and sprayed onto the glass substrate 100 facing the plasma gun 10. The sprayed ceramic powder can be attached to the glass substrate 1 to form 201127766.
TW7254FA 陶瓷塗佈層110 (步驟S110)。陶瓷塗佈層11〇能形成於 玻璃基板100之一侧上，或者倘若需要的話，能於玻璃基 板100之二側上皆形成陶瓷塗佈層u〇。 能沿著平行於玻璃基板100之形成塗佈層之表面的 方向’以特定距離移動電漿搶10,以形成陶免塗佈層110。 當距離大於約5毫米（mm)時，陶瓷塗佈層U0可能不 會局部形成於玻璃基板100上。當距離小於約3 mm時， 陶瓷塗佈層110可能會重疊。亦即，陶究塗佈層11〇可能 不會以均勻的厚度形成。因此，能以約3至約5 mm之距 離移動電漿搶10，以形成具均勻厚度之陶瓷塗佈層110。 當從電漿搶10喷灑之陶瓷粉末之速度大於約18〇〇〇 cm/min時，陶瓷塗佈層11〇可能不會局部形成於玻璃基板 100上。當從電漿搶10喷灑之陶瓷粉末之速度小於約4〇〇〇 cm/min時’陶瓷塗佈層11〇可能會重疊。亦即，陶瓷塗佈 層110可能不會以均勻的厚度形成。因此，從電漿槍10 喷灑之陶瓷粉末之速度能為約4000至約18000 cm/min， 以形成具均勻厚度之陶瓷塗佈層110。 當電漿搶10及玻璃基板100之間的距離大於約50 cm 時，陶瓷塗佈層110可能不會局部形成於玻璃基板1〇〇 上。當電漿槍10及玻璃基板100之間的距離小於約10 cm 時，陶瓷塗佈層110可能會重疊。亦即，陶瓷塗佈層110 可能不會以均勻的厚度形成。此外，當電漿搶10及玻璃 基板100之間的距離小於約10 cm時，玻璃基板1〇〇可能 會因熔化的陶瓷粉末所造成之熱衝擊而導致其受損。因 此，電漿槍10及玻璃基板100之間的距離能為約1〇 cm 201127766TW7254FA ceramic coating layer 110 (step S110). The ceramic coating layer 11 can be formed on one side of the glass substrate 100 or, if necessary, a ceramic coating layer can be formed on both sides of the glass substrate 100. The plasma repulsion 10 can be moved at a specific distance in a direction parallel to the surface of the glass substrate 100 where the coating layer is formed to form the ceramic coating layer 110. When the distance is more than about 5 mm, the ceramic coating layer U0 may not be partially formed on the glass substrate 100. When the distance is less than about 3 mm, the ceramic coating layers 110 may overlap. That is, the ceramic coating layer 11 may not be formed in a uniform thickness. Therefore, the mobile plasma can be grabbed at a distance of about 3 to about 5 mm to form a ceramic coating layer 110 having a uniform thickness. When the speed of the ceramic powder sprayed from the plasma is greater than about 18 〇〇〇 cm/min, the ceramic coating layer 11 may not be partially formed on the glass substrate 100. When the speed of the ceramic powder sprayed from the plasma is less than about 4 〇〇〇 cm/min, the ceramic coating layer 11 may overlap. That is, the ceramic coating layer 110 may not be formed in a uniform thickness. Therefore, the speed of the ceramic powder sprayed from the plasma gun 10 can be from about 4,000 to about 18,000 cm/min to form the ceramic coating layer 110 having a uniform thickness. When the distance between the plasma grab 10 and the glass substrate 100 is greater than about 50 cm, the ceramic coating layer 110 may not be partially formed on the glass substrate 1?. When the distance between the plasma gun 10 and the glass substrate 100 is less than about 10 cm, the ceramic coating layers 110 may overlap. That is, the ceramic coating layer 110 may not be formed in a uniform thickness. Further, when the distance between the plasma grab 10 and the glass substrate 100 is less than about 10 cm, the glass substrate 1 may be damaged by thermal shock caused by the molten ceramic powder. Therefore, the distance between the plasma gun 10 and the glass substrate 100 can be about 1 〇 cm 201127766
1 W/^4FA 至約50 cm，以形成具均勻厚度之陶瓷塗佈層11〇且防止 熱傷害。 一般而言，陶瓷粉末能包含非金屬礦物之粉末以形 成塗佈層。陶瓷粉末之範例能包含氧化鋁（a12〇3)、氧化 釔（Y203 )、氧化锆（Zr02 )、碳化鋁（A1C )、氮化鈦（TiN )、 氮化銘（A1N)、碳化鈦（TiC)、氧化鎂（Mg〇)、氧化飼 (CaO )、氧化錦（Ce〇2 )、二氧化鈦（Ti〇2 )、碳化蝴（BxCy )、 氮化硼（BN)、二氧化矽（Si〇2)、碳化矽（SiC)、釔鋁石 榴石（Yttrium aluminium garnet，YAG)、富鋁紅柱石 (mullite)、氟化鋁（AIF3)等材料。此些材料能單獨使用 或混合使用。 雖然陶瓷粉末之尺寸能控制成各種尺寸，然而，於一 實施例中，陶瓷粉末之尺寸較佳能為約 20 μπι 至約 30 μιη。 陶瓷塗佈層110能藉由使用電漿搶10之熱喷塗層處 理形成’且因此陶瓷塗佈層110能具有均勻的厚度。陶瓷 塗佈層110之厚度能為約10 μΓη至約25 μπι。 當陶瓷塗佈層110之厚度大於約25 μιη時，陶瓷塗佈 層110可能從玻璃基板100分離。尤其假使玻璃基板100 之表面粗糙結構的粗糙度為低的話，陶瓷塗佈層110很可 能從玻璃基板100分離。 當陶瓷塗佈層110之厚度小於約10 μιη時，陶瓷塗佈 層110會太薄而無法於玻璃基板10〇上形成均勻的厚度。 尤其當玻璃基板100之表面粗糙結構的粗糙度為低的話， 因陶瓷塗佈層11.0及玻璃基板1〇〇之間之黏著強度之降 低’陶瓷塗佈層110可能不會均勻形成。 201127766 ' *1 W/^4FA to about 50 cm to form a ceramic coating layer 11 of uniform thickness and to prevent thermal damage. In general, the ceramic powder can comprise a powder of a non-metallic mineral to form a coating layer. Examples of ceramic powders can include alumina (a12〇3), yttrium oxide (Y203), zirconia (Zr02), aluminum carbide (A1C), titanium nitride (TiN), nitriding (A1N), titanium carbide (TiC). ), magnesium oxide (Mg〇), oxidized feed (CaO), bismuth oxide (Ce〇2), titanium dioxide (Ti〇2), carbonized butterfly (BxCy), boron nitride (BN), cerium oxide (Si〇2) ), SiC, Yttrium aluminium garnet (YAG), mullite, aluminum fluoride (AIF3) and other materials. These materials can be used alone or in combination. Although the size of the ceramic powder can be controlled to various sizes, in one embodiment, the ceramic powder preferably has a size of from about 20 μm to about 30 μm. The ceramic coating layer 110 can be formed by the use of a thermal spray coating of plasma 10 and thus the ceramic coating layer 110 can have a uniform thickness. The ceramic coating layer 110 can have a thickness of from about 10 μΓη to about 25 μπι. When the thickness of the ceramic coating layer 110 is greater than about 25 μm, the ceramic coating layer 110 may be separated from the glass substrate 100. In particular, if the roughness of the surface roughness of the glass substrate 100 is low, the ceramic coating layer 110 is likely to be separated from the glass substrate 100. When the thickness of the ceramic coating layer 110 is less than about 10 μm, the ceramic coating layer 110 may be too thin to form a uniform thickness on the glass substrate 10. In particular, when the roughness of the surface roughness of the glass substrate 100 is low, the ceramic coating layer 110 may not be uniformly formed due to the decrease in the adhesion strength between the ceramic coating layer 11.0 and the glass substrate 1?. 201127766 ' *
TW7254PA 當陶瓷塗佈層110不具有均勻的厚度時，於後續的钱 刻處理中，於陶瓷塗佈層110之相對薄的部分及相對厚的 部分之間，可能會產生蝕刻速度之差異。因此，玻璃基板 100之表面於陶瓷塗佈層110之相對薄的部分，可能會被 過度地餘刻’使得十點平均粗縫度（ten point height of irregularities ’ Rz )可能不會在所想要的等級中。十點平 均粗链度（Rz)意指沿著輪廓的評估長度的五個最高峰之 平均高度及五個最低凹處之平均高度之間的差異。進一步 言之，因於玻璃基板100的每個部分之十點平均粗糙度 (Rz)為相異的，故玻璃基板1〇〇上之反射率可能會局部 變高。因此，可能會產生光眩，或者玻璃基板1〇〇可能會 霧化。 陶瓷塗佈層110能藉由陶瓷粉末之粒子尺寸而具有 表面粗糙結構。當陶瓷粉末之粒子尺寸為大時，則表面粗 糙結構的粗糙度會變高。當陶瓷粉末之粒子尺寸為小時， 則表面粗糙結構的粗糙度會變低。於一實施例中，陶究塗 佈層110之表面粗糙度能具有約2 μιη至約5 μιη之算術平 均粗Μ度（arithmetical average roughness，Ra 值）。算術 平均粗糙度意指從中央線至輪廓曲線之平均高度。當表面 粗糖結構之算術平均粗縫度小於約2 時，可能難以於 玻璃基板100之表面上形成粗糙結構。當表面粗糙結構之 算術平均粗糖度大於約5 μιη時，玻璃基板100之反射率 會降低’而能夠抑制光眩產生。然而，當Ra值大於約5 μιη 時’可能會因玻璃基板100上之粗糙度過高而使玻璃基板 1〇〇霧化。 201127766TW7254PA When the ceramic coating layer 110 does not have a uniform thickness, a difference in etching speed may occur between the relatively thin portion and the relatively thick portion of the ceramic coating layer 110 in the subsequent etching process. Therefore, the surface of the glass substrate 100 on the relatively thin portion of the ceramic coating layer 110 may be excessively left out so that the ten point height of irregularities 'Rz may not be desired. In the ranks. The ten point average coarse chain degree (Rz) means the difference between the average height of the five highest peaks along the estimated length of the contour and the average height of the five lowest recesses. Further, since the ten-point average roughness (Rz) of each portion of the glass substrate 100 is different, the reflectance on the glass substrate 1 可能 may locally become high. Therefore, glare may occur, or the glass substrate may be atomized. The ceramic coating layer 110 can have a surface roughness structure by the particle size of the ceramic powder. When the particle size of the ceramic powder is large, the roughness of the surface roughness structure becomes high. When the particle size of the ceramic powder is small, the roughness of the surface roughness structure becomes low. In one embodiment, the surface roughness of the ceramic coating layer 110 can have an arithmetic mean roughness (Ra value) of from about 2 μm to about 5 μm. Arithmetic Average roughness means the average height from the centerline to the contour curve. When the arithmetic mean roughness of the surface coarse sugar structure is less than about 2, it may be difficult to form a rough structure on the surface of the glass substrate 100. When the arithmetic mean coarse sugar of the surface roughness is more than about 5 μm, the reflectance of the glass substrate 100 is lowered', and the occurrence of glare can be suppressed. However, when the Ra value is more than about 5 μm, the glass substrate 1 may be atomized due to the roughness on the glass substrate 100 being too high. 201127766
1 W /ZJ4rA 此外，陶瓷塗佈層110之細孔（pore)孔徑能根據表 面粗糙結構的粗糙度而有所不同。於一實施例中，當表面 粗糙結構的粗糙度為高時，陶瓷粉末之粒子尺寸能為大， 以使細孔孔徑能變大。於另—實施例中，當表面粗輪結構 的粗輪度為低時，陶瓷粉末之粒子尺寸能為小，以使細孔 孔徑能變小。 還旎藉由調整供應至電漿搶10之陶瓷粉末之粒子尺 寸，來控制陶瓷塗佈層11〇之表面粗糙結構的粗糙度。於 -實施例中，當供應至電· 1G之陶㈣末之粒子尺寸 為小時，陶瓷塗佈層110之表面粗糙結構的粗糙度能為 低。相反地，當供應至電漿槍1〇之陶瓷粉末之粒子尺寸 為大時，陶瓷塗佈層丨1〇之表面粗糙結構的粗糙度能為高。 、因藉由熔化的陶瓷粉末在形成陶瓷塗佈層11〇期間 所=成之熱傷害，於喊塗佈層UG及玻璃基板⑽之間 之介面上可能產生微小的裂痕。#增加陶竟粉末之尺寸且 增加陶絲末之喷灑速度時，祕的尺寸也會增加。 請參照第！及3至5圖，第一蝕刻劑2〇能供應至形 成有陶瓷塗佈層110之破璃基板丨〇〇。 —钕刻齊J 20能為包括氫氣酸（Hydrofluoric Acid j之混合溶液。於—實施例中，第—侧劑Μ能為氯 溶液。於另一實施例中，第一_劑2〇能為氫氟 =硝酸及水的混合溶液。於此，氫氟酸、餐及水之童 1百为比能為約5〜約10:，約1〇〜約3〇:約6〇〜約85。 於-實施例中，如第3圖所示，能藉由浸泡玻璃基板 於包含第-制劑20之容器3〇内，而將第一钱刻劑 201127766 ' ·1 W /ZJ4rA Further, the pore diameter of the ceramic coating layer 110 may vary depending on the roughness of the surface roughness structure. In one embodiment, when the roughness of the surface roughness is high, the particle size of the ceramic powder can be made large so that the pore diameter of the pores can be increased. In another embodiment, when the coarseness of the surface coarse wheel structure is low, the particle size of the ceramic powder can be made small so that the pore diameter of the pores can be made small. Further, the roughness of the surface roughness of the ceramic coating layer 11 is controlled by adjusting the particle size of the ceramic powder supplied to the plasma grab. In the embodiment, when the particle size at the end of the ceramic (4) supplied to the electric 1G is small, the roughness of the surface roughness of the ceramic coating layer 110 can be low. On the contrary, when the particle size of the ceramic powder supplied to the plasma gun 1 is large, the roughness of the surface roughness of the ceramic coating layer can be high. The thermal damage caused by the molten ceramic powder during the formation of the ceramic coating layer 11 may cause minute cracks on the interface between the coating layer UG and the glass substrate (10). # Increase the size of the ceramic powder and increase the spray speed of the end of the pottery, the size of the secret will also increase. Please refer to the first! And 3 to 5, the first etchant 2 can be supplied to the glass substrate 形 which is formed with the ceramic coating layer 110. - In the case of engraving, J 20 can be a mixed solution of hydrogen acid (hydrofluoric acid j. In the embodiment, the first side agent can be a chlorine solution. In another embodiment, the first agent 2 can be Hydrofluoric acid = a mixed solution of nitric acid and water. Here, the specific energy of hydrofluoric acid, meal and water is about 5 to about 10:, about 1 to about 3: about 6 to about 85. In the embodiment, as shown in FIG. 3, the first money engraving agent 201127766 ' can be immersed in the container 3 containing the first formulation 20 by immersing the glass substrate.
TW7254PA 20供應至玻璃基板100。當第一蝕刻劑20為氫氟酸、硝 酸及水之混合溶液時’能浸泡玻璃基板1〇〇於第一蝕刻劑 20之内持續約1〇分鐘至約300分鐘的時間。於另一實施 例中’如第4圖所示’能藉由喷嘴40喷灑第一融刻劑20， 而將第一银刻劑20供應至玻璃基板1〇〇。於此，玻璃基板 100垂直立起’且第一蝕刻劑20能從複數個喷嘴40均勻 地供應至玻璃基板100。 第一钮刻劑20能經由陶瓷塗佈層11 〇之細孔及裂 缝’滲透至形成有陶瓷塗佈層110之玻璃基板1〇〇之表面。 細孔係散佈於陶瓷塗佈層110各處，且裂縫係散佈於 陶瓷塗佈層110及玻璃基板100之間之介面，以使第一敍 刻劑20之氟（fluorine，F)能經由細孔及裂縫滲透而飯刻 玻璃基板100之表面。因此，有細孔及裂痕之部分的玻璃 基板100能被姓刻得相對較多，且沒有細孔及裂痕之部分 的玻璃基板100能被蝕刻得相對較少。陶瓷塗佈層11〇能 藉由蝕刻玻璃基板100而與玻璃基板100分離。 當陶瓷塗佈層110包含與玻璃基板100相同的材料 時，能同時蝕刻陶瓷塗佈層110及玻璃基板110。 於此，藉由第一触刻劑20触刻且分離之陶究塗佈層 110及玻璃基板110之厚度的總和，能為約50 μιη至約3〇〇 μιη。 因玻璃基板100能藉由浸泡於第一蝕刻劑20内或藉 由喷灑第一姓刻劑20，而均勻地與第一截刻劑20接觸， 故能均勻地蝕刻玻璃基板100。 因此，能藉由触刻玻璃基板100來分離陶瓷塗佈層 12 201127766The TW7254PA 20 is supplied to the glass substrate 100. When the first etchant 20 is a mixed solution of hydrofluoric acid, nitric acid and water, the glass substrate 1 can be immersed in the first etchant 20 for a period of from about 1 minute to about 300 minutes. In another embodiment, the first silver encapsulant 20 can be supplied to the glass substrate 1 by spraying the first encapsulating agent 20 by the nozzle 40 as shown in Fig. 4. Here, the glass substrate 100 stands upright' and the first etchant 20 can be uniformly supplied from the plurality of nozzles 40 to the glass substrate 100. The first buttoning agent 20 can penetrate into the surface of the glass substrate 1A on which the ceramic coating layer 110 is formed via the pores and slits of the ceramic coating layer 11. The pores are dispersed throughout the ceramic coating layer 110, and the cracks are interspersed between the interface between the ceramic coating layer 110 and the glass substrate 100, so that the fluorine (F) of the first scriber 20 can be fine. The holes and cracks penetrate and the surface of the glass substrate 100 is engraved. Therefore, the glass substrate 100 having a portion of fine pores and cracks can be relatively engraved by a surname, and the glass substrate 100 having no pores and cracks can be etched relatively little. The ceramic coating layer 11 can be separated from the glass substrate 100 by etching the glass substrate 100. When the ceramic coating layer 110 contains the same material as the glass substrate 100, the ceramic coating layer 110 and the glass substrate 110 can be simultaneously etched. Here, the sum of the thicknesses of the ceramic coating layer 110 and the glass substrate 110 which are touched and separated by the first etchant 20 can be from about 50 μm to about 3 μm. Since the glass substrate 100 can be uniformly contacted with the first dicing agent 20 by being immersed in the first etchant 20 or by spraying the first surname 20, the glass substrate 100 can be uniformly etched. Therefore, the ceramic coating layer can be separated by the etched glass substrate 100 12 201127766
1W/ZMFA HO,而於形成有陶竟塗佈層11〇之表面上形成第一表面 粗糙結構120 (步驟sl2〇)。 於此’第-表面粗糖結構12〇之十點平均粗链度（Rz) =圭能為約Um至約2_。當十點平均粗链度（Rz)小 於約1叫或大於約2叫時，於後續祕刻處理中，可能 難以於玻璃基板刚上形成所想要的粗糖結構。 因未形成陶佈層⑽之玻璃基板10G之表面藉由 第-㈣劑20被均句地餘刻’而能減少玻璃基板議之 厚度。 請參照第1及6圖，第二敍刻劑能供應至具有第一表 面粗糙結構120之玻璃基板1〇〇。 第二蝕刻劑能為包括氫氟酸（HF)之混合溶液。於 實施例中，第二蝕刻劑能為氫氟酸水溶液。於另一實施 例中，第一蝕刻劑能為氫氟酸、鹽酸、硝酸及水的混合溶 液。此％，虱氟酸、鹽酸、硝酸及水之重量百分比能為約 3〇〜約70 .約1〇〜約20 :約〇 5〜約5 :約5〜約59.5。 於一貫施例中，能藉由浸泡玻璃基板1〇〇於包含第二 蝕刻劑之容器内，而將第二蝕刻劑供應至玻璃基板1〇〇。 於另一實施例中，能藉由喷嘴噴灑第二蝕刻劑，而將第二 麵刻劑供應至玻璃基板1 〇〇。此時，玻璃基板1 〇〇可垂直 立起’且第二蝕刻劑能從複數個喷嘴均勻地供應至玻璃基 板 100。 因此’能藉由使用第二蝕刻劑蝕刻形成有第一表面粗 糙結構120之玻璃基板100,而形成第二表面粗糙結構130 (步驟 S130)。 13 201127766 ，，1W/ZMFA HO, and a first surface rough structure 120 is formed on the surface on which the ceramic coating layer 11 is formed (step sl2). Here, the tenth point of the surface-thick sugar structure 12 平均 average coarse chain degree (Rz) = gueneng is about Um to about 2 _. When the ten-point average thick chain length (Rz) is less than about 1 or greater than about 2, it may be difficult to form the desired coarse sugar structure on the glass substrate immediately in the subsequent secret treatment. The thickness of the glass substrate can be reduced by the fact that the surface of the glass substrate 10G in which the ceramic layer (10) is not formed is uniformly etched by the -(iv) agent 20. Referring to Figures 1 and 6, the second scribe can be supplied to the glass substrate 1 having the first surface roughness 120. The second etchant can be a mixed solution including hydrofluoric acid (HF). In an embodiment, the second etchant can be an aqueous solution of hydrofluoric acid. In another embodiment, the first etchant can be a mixed solution of hydrofluoric acid, hydrochloric acid, nitric acid, and water. The % by weight of fluorinated acid, hydrochloric acid, nitric acid and water can be from about 3 Torr to about 70. From about 1 Torr to about 20: from about 5 to about 5: from about 5 to about 59.5. In a conventional embodiment, the second etchant can be supplied to the glass substrate 1 by immersing the glass substrate 1 in a container containing the second etchant. In another embodiment, the second etchant can be supplied to the glass substrate 1 by spraying a second etchant through the nozzle. At this time, the glass substrate 1 can be vertically erected and the second etchant can be uniformly supplied from the plurality of nozzles to the glass substrate 100. Therefore, the second surface rough structure 130 can be formed by etching the glass substrate 100 on which the first surface rough structure 120 is formed by using the second etchant (step S130). 13 201127766 ,,
TW7254PA 玻璃基板100之凸部與第二触刻劑的接觸表面面積 大，而被第二蝕刻劑蝕刻得相對較多。另外，玻璃基板100 之凹部與第二姓刻劑的接觸表面面積小，而被第二钕刻劑 钮刻得相對較少。因此，第二表面粗糙結構的粗輪度130 小於第一表面粗糙結構的粗糙度12〇。於一實施例中，第 二表面粗糙結構130之十點平均粗糙度（Rz)能為約〇.6μπι 至約1.3 μιη。於另一實施例中，第二表面粗糙結構13〇之 十點平均粗糙度（RZ)能為約〇8μιη至約12μιη。 當十點平均粗糖度（rz)大於約丨3 μιη時，玻璃基 板100之反射率會降低，而使光眩不會產生。然而，玻璃 基板100上之表面卻可能會霧化。當十點平均粗糙度（Rz) 小於約0.6 μιη時，玻璃基板100雖然會看起來很乾淨，卻 可能會因過高的反射率而產生光眩。 當將形成有第二表面粗糙結構13〇之玻璃基板1〇〇移 離第二蝕刻劑或者停止喷灑第二蝕刻劑之後，能清洗並乾 燥玻璃基板100 ’以去除殘留的第二蚀刻劑，且此時能完 成玻璃基板100之表面處理。 關於製造防光眩玻璃之方法，第二表面粗糙結構能形 成於玻璃基板100上，而能漫射或折射照射至玻璃基板100 之入射光’以防止光眩產生。此外，因這種製造防光眩玻 璃之方法為簡單的’而能夠降低表面處理之成本。 第7圖繪示用於說明本發明另一實施例之製造防光 眩玻璃之方法之流程圖，以及第8及9圖繪示用以說明第 7圖中之製造防光眩玻璃之方法之剖視圖。 請參照第7及8圖’於玻璃基板200之表面上能執行 201127766 I W /Ζ041Ά 喷蝕處理（blasting process)。於一實施例中，能使用細珠 (bead)執行喷蝕處理。於另一實施例中，能使用砂粒 (sand)執行喷敍處理。 因此’能於玻璃基板200之表面上形成第一表面粗糙 結構210 (步驟S210)。 第一表面粗糙結構210能具有約1.2 μιη至約1.7 μηι 之十點平均粗輪度（Rz )。十點平均粗輪度（Rz )意指沿 著輪廓的評估長度的五個最高峰之平均高度及五個最低 凹處之平均高度之間的差異。當十點平均粗糙度（Rz)小 於約1.2 μιη或大於約1.7 μηι時，即使後續對玻璃基板200 進行姓刻處理，可能也難以於玻璃基板2〇〇上形成所想要 的粗經結構。 第一表面粗糙結構210能根據細珠或砂粒之粒子尺 寸而有所不同。因此，能藉由調整喷餘處理中細珠或砂粒 之粒子尺寸’而控制第一表面粗糙結構210的粗糙度。於 一實施例中’當細珠或砂粒之粒子尺寸為小時，玻璃基板 200之第一表面粗糙結構210的粗糙度能變低。相反地， 當細珠或砂粒之粒子尺寸為大時，玻璃基板2〇〇之第一表 面粗糙結構210的粗糙度能變高。 藉由喷蝕處理，能於玻璃基板200之表面上形成複數 個微玻璃及微裂縫。 請參照第7及9圖，蝕刻劑能供應至具有第一表面粗 糙結構210之玻璃基板200。 钱刻劑能為包括氫氟酸（HF )之混合溶液。於一實 施例中，蝕刻劑能為氩氟酸水溶液。於另一實施例中，蝕 15 201127766 ，The contact surface area of the convex portion of the TW7254PA glass substrate 100 and the second etchant is large, and is relatively etched by the second etchant. Further, the contact surface area of the concave portion of the glass substrate 100 and the second surname agent is small, and is relatively inscribed by the second engraving agent button. Therefore, the coarse rotation 130 of the second surface roughness is smaller than the roughness 12 of the first surface roughness. In one embodiment, the tenth point average roughness (Rz) of the second surface roughness 130 can be from about 66. πι to about 1.3 μηη. In another embodiment, the tenth average roughness (RZ) of the second surface roughness 13 is from about 8 μm to about 12 μm. When the ten point average coarse sugar (rz) is more than about 丨3 μηη, the reflectance of the glass substrate 100 is lowered, and the glare is not generated. However, the surface on the glass substrate 100 may be atomized. When the ten-point average roughness (Rz) is less than about 0.6 μm, the glass substrate 100 may look clean, but may cause glare due to excessive reflectance. After the glass substrate 1 formed with the second surface roughness 13〇 is removed from the second etchant or the second etchant is stopped, the glass substrate 100′ can be washed and dried to remove the residual second etchant. At this time, the surface treatment of the glass substrate 100 can be completed. Regarding the method of manufacturing the light-proof glare glass, the second surface roughening structure can be formed on the glass substrate 100 while diffusing or refracting the incident light irradiated to the glass substrate 100 to prevent the occurrence of light glare. Further, since the method of manufacturing the anti-glare glass is simple, the cost of the surface treatment can be reduced. 7 is a flow chart for explaining a method for manufacturing an anti-glare glass according to another embodiment of the present invention, and FIGS. 8 and 9 are diagrams for explaining a method for manufacturing an anti-glare glass according to FIG. 7. Cutaway view. Referring to Figures 7 and 8, the 201127766 I W /Ζ041Ά blasting process can be performed on the surface of the glass substrate 200. In one embodiment, the etching process can be performed using beads. In another embodiment, the squirting process can be performed using sand. Therefore, the first surface rough structure 210 can be formed on the surface of the glass substrate 200 (step S210). The first surface roughness 210 can have a ten point average coarse rotation (Rz) of from about 1.2 μηη to about 1.7 μηι. The ten point average coarse roundness (Rz) means the difference between the average height of the five highest peaks along the estimated length of the contour and the average height of the five lowest recesses. When the ten-point average roughness (Rz) is less than about 1.2 μm or more than about 1.7 μm, it may be difficult to form a desired rough structure on the glass substrate 2 even if the glass substrate 200 is subsequently subjected to a surname treatment. The first surface roughness 210 can vary depending on the particle size of the beads or sand particles. Therefore, the roughness of the first surface rough structure 210 can be controlled by adjusting the particle size of the fine beads or the sand particles in the squirting process. In one embodiment, when the particle size of the fine beads or grit is small, the roughness of the first surface roughness 210 of the glass substrate 200 can be lowered. On the contrary, when the particle size of the fine beads or the sand particles is large, the roughness of the first surface roughness structure 210 of the glass substrate 2 becomes high. A plurality of microglasses and microcracks can be formed on the surface of the glass substrate 200 by the etching treatment. Referring to Figures 7 and 9, an etchant can be supplied to the glass substrate 200 having the first surface roughness 210. The money engraving agent can be a mixed solution including hydrofluoric acid (HF). In one embodiment, the etchant can be an aqueous solution of argon fluoride. In another embodiment, etch 15 201127766 ,
TW7254PA 刻劑能為氫氟酸、硝酸及水的混合溶液。此時，氫氟酸、 硝酸及水之重量百分比能為約5〜約10 :約10〜約30 : 約60〜約85。於另一實施例中，蝕刻劑能為氫氟酸、鹽 酸、硝酸及水的混合溶液。此情況下，氫氟酸、鹽酸、硝 酸及水之重量百分比能為約30〜約70 ·•約10〜約20 :約 0.5〜約5 :約5〜約59.5。 於一實施例中，能藉由浸泡玻璃基板200於包含蝕刻 劑之容器内，而將蝕刻劑供應至玻璃基板200。當蝕刻劑 為氫氟酸、硝酸及水之混合溶液時，能浸泡玻璃基板200 於蝕刻劑之内持續約10分鐘至約300分鐘的時間。於另 一實施例中，能藉由喷嘴喷灑蝕刻劑，而將蝕刻劑供應至 玻璃基板200。於此，玻璃基板200可垂直立起，且蝕刻 劑能從複數個喷嘴均勻地供應至玻璃基板200。 能藉由蝕刻劑蝕刻玻璃基板200。浸泡於蝕刻劑之内 之玻璃基板200能均勻地與蝕刻劑接觸，而能均勻地蝕刻 玻璃基板200。於一實施例中，玻璃基板200之表面上之 微玻璃能藉由飯刻劑钮刻而去除。進一步言之，钮刻劑之 氟（F)能經由微裂縫滲透而蝕刻玻璃基板2〇〇之表面。 因此’能藉由蝕刻玻璃基板200形成第二表面粗糙結 構 220 (步驟 S220)。 十點平均粗糙度（Rz)為沿著輪廓的評估長度的五個 最高峰之平均高度及五個最低凹處之平均高度之間的差 異。玻璃基板200上之十點平均粗縫度（RZ)能為約0.6 μιη 至約1.3 μιη，較佳為約0.8 μιη至約1.2 μιη。 當十點平均粗糙度（Rz)大於約1.3 μιη時，玻璃基 16 201127766 I w tAj^rn 板200之反射率會降低，而使光眩不會產生。然而，玻璃 基板200之表面卻可能會霧化。當十點平均粗糙度（Rz) 小於約0.6 μπι時，玻璃基板200雖然會看起來很乾淨，卻 可能會因過高的反射率而產生光眩。 當將形成有第二表面粗糙結構220之玻璃基板200移 離姓刻劑或者停止喷麗姓刻劑之後，能清洗並乾燥玻璃基 板200,以去除殘留的蝕刻劑，且此時能完成玻璃基板200 之表面處理。 關於製造防光眩玻璃之方法，第二表面粗糙結構220 能形成於玻璃基板200上，而能漫射或折射照射至玻璃基 板200之入射光，以防止光眩產生。此外，因這種製造防 光眩玻璃之方法為簡單的，而能夠降低玻璃基板200之表 面處理成本。 根據本發明上述之實施例，能藉由分離經過熱喷塗層 處理而形成之陶瓷塗佈層，而於玻璃基板之表面上形成第 一表面粗縫結構，而且能藉由餘刻具有第一表面粗縫結構 之玻璃基板而形成具有第二表面粗縫結構之玻璃基板。因 此，能防止玻璃基板之光眩。 此外，能藉由調整熱喷塗層處理中之陶瓷粉末之尺 寸，而輕易控制玻璃基板上之第一表面粗糙結構的粗輪度 及第二表面粗縫結構的粗經度。 因這種製造防光眩玻璃之方法為簡單的，而能夠降低 玻璃基板之表面處理成本。 上述内容係用以說明實施例，而並非被解釋成對其之 限制。雖然已描述一些實施例，但是熟習此項技藝者將輕 201127766The TW7254PA engraving agent can be a mixed solution of hydrofluoric acid, nitric acid and water. At this time, the weight percentage of hydrofluoric acid, nitric acid and water can be from about 5 to about 10: from about 10 to about 30: from about 60 to about 85. In another embodiment, the etchant can be a mixed solution of hydrofluoric acid, hydrochloric acid, nitric acid, and water. In this case, the weight percentage of hydrofluoric acid, hydrochloric acid, nitric acid and water can be from about 30 to about 70 · from about 10 to about 20: from about 0.5 to about 5: from about 5 to about 59.5. In one embodiment, the etchant can be supplied to the glass substrate 200 by immersing the glass substrate 200 in a container containing an etchant. When the etchant is a mixed solution of hydrofluoric acid, nitric acid and water, the glass substrate 200 can be immersed in the etchant for a period of time of from about 10 minutes to about 300 minutes. In another embodiment, the etchant can be supplied to the glass substrate 200 by spraying the etchant through the nozzle. Here, the glass substrate 200 can be vertically erected, and the etchant can be uniformly supplied from the plurality of nozzles to the glass substrate 200. The glass substrate 200 can be etched by an etchant. The glass substrate 200 immersed in the etchant can be uniformly contacted with the etchant, and the glass substrate 200 can be uniformly etched. In one embodiment, the microglass on the surface of the glass substrate 200 can be removed by a meal engraving. Further, the fluorine (F) of the buttoning agent can etch the surface of the glass substrate 2 through the microcrack penetration. Therefore, the second surface roughness structure 220 can be formed by etching the glass substrate 200 (step S220). The ten point average roughness (Rz) is the difference between the average height of the five peaks along the estimated length of the profile and the average height of the five lowest recesses. The ten point average roughness (RZ) energy on the glass substrate 200 can be from about 0.6 μm to about 1.3 μm, preferably from about 0.8 μm to about 1.2 μm. When the ten point average roughness (Rz) is greater than about 1.3 μm, the reflectance of the glass substrate 16 201127766 I w tAj^rn plate 200 is lowered, and the light glare is not generated. However, the surface of the glass substrate 200 may be atomized. When the ten-point average roughness (Rz) is less than about 0.6 μm, the glass substrate 200 may look clean, but may cause glare due to excessive reflectance. After the glass substrate 200 having the second surface roughness 220 formed thereon is removed from the surname or the squeegee is stopped, the glass substrate 200 can be washed and dried to remove the residual etchant, and the glass substrate can be completed at this time. Surface treatment of 200. Regarding the method of manufacturing the anti-glare glass, the second surface roughness 220 can be formed on the glass substrate 200 to diffuse or refract incident light that is incident on the glass substrate 200 to prevent glare. Further, since the method of manufacturing the glare-proof glass is simple, the surface treatment cost of the glass substrate 200 can be reduced. According to the above embodiment of the present invention, the first surface rough structure can be formed on the surface of the glass substrate by separating the ceramic coating layer formed by the thermal spray coating treatment, and can have the first A glass substrate having a rough surface structure forms a glass substrate having a second surface rough structure. Therefore, the glare of the glass substrate can be prevented. Further, the coarse roundness of the first surface roughness structure on the glass substrate and the coarse longitude of the second surface rough structure can be easily controlled by adjusting the size of the ceramic powder in the thermal spray coating treatment. Since the method of manufacturing the anti-glare glass is simple, the surface treatment cost of the glass substrate can be reduced. The above is intended to illustrate the embodiments and is not to be construed as limiting. Although some embodiments have been described, those skilled in the art will be light 201127766
1W7254PA 易地明白到，在實質上不悖離本發明之新穎教示及優點的 情況下，仍可能對實施例做出各種變更。因此，此些所有 的變更為有意被涵蓋於申請專利範圍中所定義的本發明 之範疇内。於申請專利範圍中，手段加功能性用語，為有 意囊括說明於此如執行所述功能之構造，以及不僅囊括構 造上的均等物，還囊括均等的構造。因此，應理解到上述 内容係用以說明各種實施例，而並非被解釋成受限於所揭 露之特定實施例，且對於所揭露之實施例所做之變更以及 其他實施例而言，係有意被涵蓋於後附申請專利範圍之範 疇之内。 【圖式簡單說明】 第1圖繪示用以說明本發明之一實施例之製造防光 眩玻璃之方法之流程圖。 第2至6圖繪示用以說明第1圖中之製造防光眩玻璃 之方法之剖視圖。 第7圖繪示用以說明本發明另一實施例之製造防光 眩玻璃之方法之流程圖。 第8及9圖繪示用以說明第7圖中之製造防光眩玻璃 之方法之剖視圖。 【主要元件符號說明】 10 :電漿搶 11 :氣體入口 12 :陰極 18 2011277661W7254PA It is to be understood that various changes may be made in the embodiments without departing from the spirit and scope of the invention. Accordingly, all such changes are intended to be included within the scope of the invention as defined in the scope of the claims. In the context of the patent application, the means and functional terms are intended to encompass the construction in which the function is performed, and not only the structural equivalents, but also the equal construction. Therefore, the present invention is to be understood as being limited to the particular embodiments of the disclosed embodiments, and It is covered by the scope of the attached patent application. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a flow chart showing a method of manufacturing a light-proof glare glass according to an embodiment of the present invention. 2 to 6 are cross-sectional views for explaining the method of manufacturing the antiglare glass in Fig. 1. Fig. 7 is a flow chart showing a method of manufacturing a light-proof glare glass according to another embodiment of the present invention. 8 and 9 are cross-sectional views for explaining the method of manufacturing the antiglare glass in Fig. 7. [Main component symbol description] 10 : Plasma grab 11 : Gas inlet 12 : Cathode 18 201127766
1 W /ZD^rA 13 :冷卻通道 14 :陽極 15 :外圍件 16 :支撐件 17 :粉末入口 18 :電漿火花 20 :第一蝕刻劑 30 :容器 40 :喷嘴 100、200 :玻璃基板 110 :陶瓷塗佈層 120、210:第一表面粗糙結構 130、220:第二表面粗糙結構 S110、S120、S130、S210、S220 :流程步驟 191 W /ZD^rA 13 : Cooling passage 14 : Anode 15 : Peripheral member 16 : Support member 17 : Powder inlet 18 : Plasma spark 20 : First etchant 30 : Container 40 : Nozzle 100 , 200 : Glass substrate 110 : Ceramic coating layer 120, 210: first surface roughness 130, 220: second surface roughness S110, S120, S130, S210, S220: process step 19
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| Application Number | Priority Date | Filing Date | Title |
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| KR1020090116761A KR101408663B1 (en) | 2009-11-30 | 2009-11-30 | Method of processing an anti glare glass |
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| TW201127766A true TW201127766A (en) | 2011-08-16 |
| TWI401223B TWI401223B (en) | 2013-07-11 |
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| TW99141117A TWI401223B (en) | 2009-11-30 | 2010-11-26 | Method of manufacturing an anti-glare glass |
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| KR (1) | KR101408663B1 (en) |
| TW (1) | TWI401223B (en) |
| WO (1) | WO2011065796A2 (en) |
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| CN102629167A (en) * | 2012-02-29 | 2012-08-08 | 信利光电(汕尾)有限公司 | Electronic product, touch screen cover thereof and manufacture method |
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| CN102629167A (en) * | 2012-02-29 | 2012-08-08 | 信利光电(汕尾)有限公司 | Electronic product, touch screen cover thereof and manufacture method |
| CN102629167B (en) * | 2012-02-29 | 2015-08-05 | 信利光电股份有限公司 | A kind of electronic product and touch screen cover thereof and method for making |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101408663B1 (en) | 2014-06-18 |
| TWI401223B (en) | 2013-07-11 |
| WO2011065796A2 (en) | 2011-06-03 |
| WO2011065796A3 (en) | 2011-10-20 |
| KR20110060233A (en) | 2011-06-08 |
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