201122495 六、發明說明： 【發明所屬之技術領域】 [0001].本發明是有關於一種用於探針卡之微探針 有雙樑結構之懸臂式微探針。 尤指一種具 [0002] ❹ [0003] [0004] 〇 [0005] 【先前技術】隨著技術的發展，半導體晶片已高 ，在封裝製程之前，透過微製_製造的半導體晶片係 經由電乳測試，以挑出不良品。為進行電氣測試，係使 用探針卡來連接測試器與半導體晶片之電極銲墊。 裝設於探針卡之探針（pr〇be )(也稱為接觸器或探針（ 可分㈣臂式和垂直式。探針應具有能吸收 電極銲塾間之㈣，且同時應絲電接銲塾上之原生氧 化物的結構》 為了滿足這些要求，習知已揭露—種如第ι圖所示之具有 單樑形狀之微探針，其係為典型的懸臂式探針。如第蹋 所示，習知懸臂式_㈣由—連接於_探針卡（未圖 示）之連接部m、-係由該連接部⑻以側向延种之延 伸部103、及—具有—尖_之接觸部m所構成，該 尖=係由該延伸部103之—端部突出所形成，以接觸半導 體晶片之銲塾。 如第1圖所示’由於此習知懸臂式微探針之連接部m係 ;W 向上㈣’而該延伸部1〇3係於 。亦即水平方向上延伸’因此該懸臂式微探針 具有一單樑。 098146044 表單編號A0101 第3頁/共28頁 0993114578-0 201122495 * [0006] 由於此習知Μ賴探針係形鮮樑職，因此 生應力集中而使塑性變形容易產生。另外由於: 度咖）過長，故此習知懸以微長 用於小型電極銲墊。 …、在 [0007] 為了克服具有單樑之懸臂式微探針的缺點 及第3圖之具有雙樑之懸臂式微探針。 係揭露第2圖 [0008] 禾乙圃所示，具有雙樑之習 〜佩休矸係由一 於-探針卡（未圖示）之連接部⑴、—係由該連接部 UlM側向延伸之延伸部⑴、及-具有-尖端117之与 觸部115所構成，該尖端係由該延伸部113之—端部突| 所形成，以接觸半導體晶片之銲墊。 大*201122495 VI. Description of the Invention: [Technical Field of the Invention] [0001] The present invention relates to a microprobe for a probe card having a cantilever type microprobe having a double beam structure. [0002] 一种 [0003] [0004] [0005] [Prior Art] With the development of technology, semiconductor wafers have been high, and before the packaging process, the semiconductor wafers manufactured by microfabrication are passed through the electro-milk Test to pick out defective products. For electrical testing, a probe card is used to connect the electrode pads of the tester to the semiconductor wafer. Probe (pr〇be) mounted on the probe card (also known as contactor or probe (dividable (four) arm type and vertical type. The probe should have the ability to absorb the electrode between the electrode pads (4), and at the same time Structure of Primary Oxide on Electrical Welded Welds In order to meet these requirements, it has been disclosed that a microbeam having a single beam shape as shown in Fig. 1 is a typical cantilever probe.蹋, the conventional cantilever type _ (four) consists of a connection portion m connected to the _ probe card (not shown), an extension portion 103 which is laterally extended by the connection portion (8), and a tip The contact portion m is formed by the protrusion of the end portion of the extension portion 103 to contact the solder pad of the semiconductor wafer. As shown in Fig. 1, the connection of the cantilever micro-probe is known. Part m; W up (four)' and the extension 1〇3 is attached. That is, extending horizontally 'Therefore the cantilevered microprobe has a single beam. 098146044 Form No. A0101 Page 3 of 28 0993114578-0 201122495 * [0006] Because this knows that the probe is shaped like a fresh beam, the stress is concentrated and the plastic deformation is easy. Produced. In addition, because: the coffee is too long, so the conventional suspension is used for small electrode pads. [0007] In order to overcome the shortcomings of the cantilever type microprobe with single beam and the figure 3 Beam cantilever type microprobe. It is disclosed in Figure 2 [0008], which has a double beam, and the connection part (1), which is a probe card (not shown). An extension portion (1) extending laterally from the connecting portion U1M, and a portion having a tip end 117 and a contact portion 115 formed by the end portion of the extension portion 113 to contact the welding of the semiconductor wafer Pad. Big*
[0009] [0010] 在第2圖中，延伸部113包括上下棑列的“上樑ll3a及— 下樑mb，且該延伸部113係藉由於該上、下襟ιΐ3岭 "扑之間形成一長狹縫形開口 U3c而具有一雙樑形狀。 根據第2圖之具有雙樑之習知懸臂式徼棣奸，當接觸部 115之尖端117在半導體晶片測試過程中與半導體晶片之 電極銲塾接觸而使貞載仙於該探針時，與第1圖之習知 探針相比，可縮短針臂的長度。[0010] In FIG. 2, the extension portion 113 includes "upper beam ll3a and - lower beam mb" which are arranged in an upper and lower row, and the extension portion 113 is due to the upper and lower 襟ιΐ3 ridge" Forming a long slit-shaped opening U3c to have a double beam shape. According to the conventional cantilever type of double beam having the double beam, when the tip end 117 of the contact portion 115 is in the semiconductor wafer test process and the electrode of the semiconductor wafer When the solder bump is in contact with the probe, the length of the needle arm can be shortened compared to the conventional probe of Fig. 1.
[0011] 然而’當第2圖之具有雙樑之習知懸臂式微探針因外力變 形時，該探針可能會有應力集中的問題。 [0012] 如第3圖所示，具有波紋管狀雙樑之習知懸臂式微探針係 由一連接於—探針卡（未圖示）之連接部121、一係由該 連接部121以側向延伸之延伸部123、及一具有一尖端 098146044 127之接觸部125所構成，該尖端係由該延伸部123之一 表單編號A0101 第4頁/共28頁 0993114578-0 201122495 [0013] [0014] [0015] Ο [0016] [0017] [0018] 端部突出所形成，以接觸半導體晶片之電極銲墊。 在第3圖中，延伸部123包括上下排列的一上樑123a及一 下樑123b，且該延伸部123係藉由於該上、下樑123a和 123b之間形成一長狹缝形開口 123c而具有一雙樑形狀。 在此情況下，延伸部123的形狀具有一波紋管狀雙樑，該 雙樑係於不同方向上彎曲，同時具有至少一反曲點，而 不像第2圖所示之具有筆直的雙樑形狀。 根據第3圖之具有雙樑之習知懸臂式微探針，當接觸部 125之尖端127在半導體晶片測試過程中與半導體晶片之 電極銲墊接觸而使負載作用於該探針時，與第1圖之習知 探針相比，可縮短針臂的長度，特別的是，因為延伸部 123具有波紋管形狀，所以可減少垂直於平面方向之振動 (out of plane behaveier)與應力集中。 然而，當第3圖所示之具有波紋管狀雙樑之習知懸臂式微 探針因受到外力而變形時，該探針需要更多的應力緩和 ，且由於太多設計變數和複雜的形狀，因此無法輕易地 設計。 上述揭露於本背景中的資訊僅用以增進對發明背景的理 解，故此資訊亦包含未見述於此先前技術中，但本國一 般技藝者已知的資訊。 【發明内容】 有鑑於上述課題，本發明之目的為提供一種具有樞紐結 構之雙樑懸臂式微探針，該樞紐結構不受力矩作用，藉 以防止因為變形而產生的應力集中。 098146044 表單編號A0101· 第5頁/共28頁 0993114578-0 201122495 [0019] 緣是，為達上述目的，依本發明之一種之懸臂式微探針 ，其係包括：一連接部，其連接於一探針卡；一延伸部 ，其係由該連接部以側向延伸，且具有雙樑；一接觸部 ，由該延伸部之一端部突出形成一尖端，以接觸半導體 晶片之電極銲墊；及一樞紐部，其設於該延伸部與該接 觸部之間，且不會將力矩由該接觸部傳送至該延伸部。 [0020] 該枢紐部可包括形狀相對應之一凸部及一凹陷部，當該 微探針因外力變形時，該凸部係成為轉動中心且該凹陷 部係引導該凸部。 [0021] 該樞紐部可於該凸部與該凹陷部之間形成一間隙，當沒 有外力作用於該微探針時，使該凸部與該凹陷部彼此得 以保持分離。 [0022] 該枢紐部可進一步包括一突出部，其係由該延伸部延伸 而形成，用以包圍該凸部。 [0023] 該延伸部包括上下排列的一第一樑及一第二樑，且於該 第一與第二樑之間形成一開口。 [0024] 該第一與第二樑至少其中之一可具有波紋管形狀，該波 紋管形狀係呈彎曲且同時具有至少一反曲點。 [0025] 該樞紐部可形成於該延伸部之該第二樑與該接觸部之間 〇 [0026] 該樞紐部可藉由具有形狀相對應之一凸部及一凹陷部且 於該凹陷部與該凸部之間形成一間隙而形成一樞紐結構 ，當沒有外力作用於該微探針時，該枢紐部可使該延伸 098146044 表單編號A0101 第6頁/共28頁 0993114578-0 201122495 [0027] 部之該第二樑與該接觸部彼此保持分離。 該樞紐邹可進一步包括一突出部，其係由該凹 而形成’用以包圍該凸部。 1¾部延伸 [0028] [0029] Ο [0030] 抑部可形成於該延伸部之該第二樑及該接觸部之其中 之一 ’且該凹陷部係形成於另—者上。 x、 =延伸部中，可將連接該第-標連接部之端部與 I之端部的虛線及連接該第二樑連接部之端部與 部之端部的虛線設定為彼此相交。 Λ 該連接部與該延伸部可由選自包括鎳、鎳合金及* 銅之組群的金屬材料所製成’且該接觸部係由^青 鈷、鈷合金 所製成。 鍺 、姥合金、及其合金之組群的 選自包括 金屬材料 [0031] G [0032] 、側向延伸且具有一固定第一端及一非固定第_ 臂式微探針可包括-樞紐結構’該樞紐結構不會= 載作用於該微探針·第二端_產生的力矩傳送至 該第一端 本發明係提供一種具有不受力矩作用之樞紐結 懸臂式微探針，以防jL因為微探針變形而產生 中〇 端之懸 外加 構的雙樑 的應力集 該樞紐結構係傳送力而不傳送力矩，因此她紐結構形 成處不受力矩作用，所以可產生僅由習知探針消除力矩 的功效。其結果可完全防止因為力矩而導致的應力集中 098146044 表單煸號A0101 第7頁/共28頁 0993114578-0 [0033] 201122495 [0034] [0035] [0036] [0037] 此等結構具有可有效防止應力隼 果中的優點，同時也採用 驾知雙樑的優點，該優點為雙 ^ #式微探針縮短針臂 之功效，以及可藉由於雙樑中 ^ ^ ^ , b 成$曲部以形成波紋管 形狀來達到防止出平面行爲之功效。 茲為使貴審查委員對本發明夕 月之技術特徵及所達成之功 效有更進一步之瞭解與認識， 又謹提供較佳之實施例 及相關圖式以為輔佐之用，並、 乂坪細之說明文字配合說 明如後。 :實施方式】 以下將參照相關㈣，說㈣本則較佳實施例之具有 樞紐結構之雙樑懸臂式微探針，& 馮使便於理解，下述實 施例中之相同元件係以相同之符號標示來說明。、 請參閱第4圖及第5圖，其係表示本發明第-實施例及第 一實施例之變形例之具有樞紐結構之雙㈣臂式微探針 ，第6圖及第7圖係表示本發明第二實施例及第二實 變形例之具有樞紐結構之波紋管狀㈣歸式微探針， 而第8圖及第9圖係表示本發明第三及第四實_< 式微探針。 〜#[0011] However, when the conventional cantilever type microprobe having the double beam of Fig. 2 is deformed by an external force, the probe may have a problem of stress concentration. [0012] As shown in FIG. 3, a conventional cantilever type microprobe having a bellows-shaped double beam is connected to a connecting portion 121 of a probe card (not shown), and is connected to the side by the connecting portion 121. The extending portion 123 and the contact portion 125 having a tip 098146044 127 are formed by one of the extending portions 123. Form No. A0101 Page 4 / Total 28 Page 0993114578-0 201122495 [0013] [0014 [0015] [0018] The end protrusions are formed to contact the electrode pads of the semiconductor wafer. In the third embodiment, the extending portion 123 includes an upper beam 123a and a lower beam 123b which are arranged one above another, and the extending portion 123 is formed by forming a long slit-shaped opening 123c between the upper and lower beams 123a and 123b. A pair of beam shapes. In this case, the shape of the extension portion 123 has a corrugated tubular double beam which is bent in different directions while having at least one inflection point, unlike the straight double beam shape as shown in FIG. . According to the conventional cantilever type microprobe having a double beam according to Fig. 3, when the tip end 127 of the contact portion 125 is in contact with the electrode pad of the semiconductor wafer during the semiconductor wafer test, the load acts on the probe, and the first The length of the needle arm can be shortened compared to the conventional probe of the figure. In particular, since the extension portion 123 has a bellows shape, the out of plane behaveier and stress concentration can be reduced. However, when the conventional cantilever type microprobe having a bellows-shaped double beam shown in FIG. 3 is deformed by an external force, the probe requires more stress relaxation, and due to too many design variables and complicated shapes, Can't be easily designed. The above information disclosed in this background is only used to enhance the understanding of the background of the invention, and thus the information also includes information that is not described in the prior art, but is known to the general practitioner of the country. SUMMARY OF THE INVENTION In view of the above problems, an object of the present invention is to provide a double beam cantilever type microprobe having a hinge structure which is free from a moment to prevent stress concentration due to deformation. 098146044 Form No. A0101· Page 5 of 28 pages 0993114578-0 201122495 [0019] A cantilever type microprobe according to the present invention, which comprises a connecting portion connected to a a probe card; an extension portion extending laterally from the connection portion and having a double beam; a contact portion projecting from one end portion of the extension portion to form a tip end for contacting the electrode pad of the semiconductor wafer; a hinge portion is disposed between the extension portion and the contact portion and does not transmit a moment from the contact portion to the extension portion. [0020] The hinge portion may include a convex portion and a concave portion corresponding in shape, and when the micro-probe is deformed by an external force, the convex portion serves as a center of rotation and the concave portion guides the convex portion. [0021] The hinge portion can form a gap between the convex portion and the concave portion, and when no external force acts on the microprobe, the convex portion and the concave portion are separated from each other. [0022] The hinge portion may further include a protrusion formed by the extension portion to surround the protrusion portion. [0023] The extension portion includes a first beam and a second beam arranged up and down, and an opening is formed between the first and second beams. [0024] At least one of the first and second beams may have a bellows shape that is curved and at the same time has at least one inflection point. [0025] The hinge portion may be formed between the second beam and the contact portion of the extending portion. [0026] The hinge portion may have a convex portion and a concave portion corresponding to the shape and may be in the concave portion Forming a gap with the convex portion to form a hinge structure, when there is no external force acting on the microprobe, the hinge portion can make the extension 098146044 Form No. A0101 Page 6 / Total 28 Page 0993114578-0 201122495 [ The second beam of the portion is kept separate from the contact portion. The hub may further include a projection formed by the recess to surround the projection. 13⁄4 Extension [0029] [0030] The depression may be formed in one of the second beam and the contact portion of the extension and the depression is formed on the other. In the x and = extension portions, the broken line connecting the end portion of the first target connecting portion and the end portion of the I and the broken line connecting the end portions of the end portion and the second beam connecting portion may be arranged to intersect each other. Λ The connecting portion and the extending portion may be made of a metal material selected from the group consisting of nickel, nickel alloy, and *copper' and the contact portion is made of cobalt, cobalt alloy. The group of tantalum, niobium alloys, and alloys thereof is selected from the group consisting of a metal material [0031] G [0032], laterally extending and having a fixed first end and a non-fixed first arm type microprobe may include a - hinge structure 'The pivot structure does not = the torque acting on the microprobe · the second end _ is transmitted to the first end. The present invention provides a pivotal cantilever type microprobe having a torque-free action, in case jL is prevented The micro-probe is deformed to produce a stress set of the double-beam of the suspension at the mid-end end. The hub structure transmits the force without transmitting the torque, so the formation of the neo-structure is not affected by the moment, so that only the conventional probe can be generated. Eliminate the effect of torque. As a result, stress concentration due to torque can be completely prevented. 098146044 Form No. A0101 Page 7 / Total 28 Page 0993114578-0 [0033] [0037] [0037] [0037] These structures are effective in preventing The advantages of the stress capsule, but also the advantage of knowing the double beam, the advantage is that the double-type micro-probe shortens the effect of the needle arm, and can be formed by the ^ ^ ^ , b into the curved part of the double beam The shape of the bellows is used to prevent the effect of the plane behavior. In order to give your reviewers a better understanding and understanding of the technical features and the efficacies achieved by the present invention, and to provide better examples and related drawings for their assistance, and the explanatory text of 乂 细 细The cooperation instructions are as follows. Embodiments Hereinafter, the double-beam cantilever type micro-probes having a hinge structure according to the preferred embodiment of the present invention will be referred to, and the same elements in the following embodiments are denoted by the same symbols. To illustrate. Please refer to FIG. 4 and FIG. 5, which are diagrams showing a dual (four) arm type microprobe having a hinge structure according to a first embodiment of the present invention and a modification of the first embodiment, and FIGS. 6 and 7 show the present invention. The bellows (four) collimated microprobe having a hinge structure according to the second embodiment and the second embodiment is invented, and Figs. 8 and 9 show the third and fourth real-type microprobes of the present invention. ~#
[0038] [0039] 098146044 如第4圖所示’本發明第-實施例之懸臂式微探針包括一 連接部1卜其連接於-探針卡（未圖示）；—延伸部^ ’其係由該連接部11以侧向延伸；—接觸部15，具有— 尖端1? ’其係㈣延伸部13之1部突丨卿成並與半 導體晶片之銲墊接觸。 ~ 本實施例之懸臂式微探針之延伸部13具有一雙 表單編號Α0101 第8頁/共28頁 °"3114578-0 201122495 [0040] 之’該延伸部13包括上下排列的— —襟13a及一第-拇 13b，且於該第一與第二樑133和 汉弟一梂 b之間形成一县滅錄 ㈣口 13e。％ 口战長狹縫 成於延伸部13内部，也可 依照設計而延伸至連接部11或接觸部15。 另外’本實施例之雙樑㈣式微探針係於延伸部13盥接 觸部15之間，更具體而言，如第4圖之部分放大圖所示， 係於延伸部13之第二樑13b與接觸Λ σ 1 b之間具有一樞紐部 0 Ο [0041] 該枢紐部包括形狀相對應之一凸1 β Ώ 丨1 ba及一凹陷部16b， 當外力作用於該探針時，延伸部夕银 ± <5之第二樑13b與接觸部 15互相接觸而形成一樞紐結碑。當沒有外力作用於該探 針時，間隙14係形成於延伸部13之第二襟咖與接觸部 15之間，使它們得以保持分離。 [0042] 〇 凸部16a係作為轉動中心’且凹陷部16b係引導凸部i6a 作為轉動中心。在第4圖中，凸部l6a係形成於延伸部^ 之第二樑13b上，而凹陷部16b係形成於接觸部15上作 不以此為限。根據變形例，該费陷部可形成於該延伸部 之該第二樑上’而該凸部可形成於該接觸部上。 [0043] 在上述配置的情況下，本實施例之懸臂式微探針當接觸 部15之尖端17在半導體晶片試驗過程中與半導體晶片之 銲墊接觸而使負载作用於該探針時，與接觸部15連接的 第一樑13a會先變形。當由於第一樑13a的變形而導致位 移大於間隙14的時候，延伸部13與接觸部15，也就是延 伸部13之第二樑13b與接觸部15會互相接觸而使第二 — 098146044 表單編號A0101 第9頁/共28頁 °"3114578-0 201122495 13b變形。 [0044] 在此情況下，當凸部1 6a與凹陷部1 6b接觸時，作用力係 由接觸部15傳送至延伸部13之第二樑13b。然而，由於延 伸部13之第二樑13b與接觸部15之間設有間隙14而並非 直接相連，因此只有在位移大於間隙14的時候，延伸部 13之第二樑13b與接觸部15才會真正互相接觸而使作用力 得以傳送。 [0045] 如習知技術所示，當半導體晶片試驗過程中施力時，延 伸部與接觸部直接互相接觸的結構會受到力矩作用，故 應力會集中於第一樑與第二樑的相會處。 [0046] 然而，如本實施例所示，柩紐結構係形成於延伸部13與 接觸部15之間，因此即便施力也不會傳送力矩，藉此可 大幅減少應力集中。 [0047] 如第5圖及第一實施例所示，本發明第一實施例之變形例 之懸臂式微探針係由一連接於一探針卡（未圖示）之連 接部21、一係由該連接部21以側向延伸之延伸部23、及 一具有一尖端27之接觸部25所構成，該尖端係由該延伸 部23之一端部突出所形成並與半導體晶片之銲墊接觸。 [0048] 另外，本變形例之懸臂式微探針之延伸部23包括上下排 列的一第一樑23a及一第二樑23b，且具有於該第一與第 二樑23a和23b之間形成一長狹縫形開口 23c的雙樑形狀 〇 [0049] 另外，如第5圖之部分放大圖所示，本變形例之雙樑懸臂 式微探針具有一樞紐結構，該樞紐結構係於延伸部23與 098146044 表單編號A0101 第10頁/共28頁 0993114578-0 201122495 接觸部25之間，更具體而言，係於延伸部23之第二樑23b 與接觸部25之間包括一間隙24、一凸部26a及一凹陷部 26b。 [0050] Ο [0051] [0052] ❹ [0053] [0054] 根據第一實施例，凹陷部16b具有接近半圓的形狀，因此 包圍將近一半的凸部16a，但根據本變形例，第一樑23a 與接觸部25相連處係形成一突出部26c，故可使凹陷部 26b延伸。因此，與第一實施例的凹陷部16b相比，本發 明變形例可形成包圍超過一半凸部26a的凹陷部26b，故 可以更穩固地形成樞紐結構。 為了正常操作樞紐，較佳為使突出部26c與第二樑23b分 開超過一預定距離，以防止突出部26c的末端在探針變形 時受到第二樑23b的干擾。 在第5圖中，凸部26a係形成於延伸部23之第二樑23b上 ，而凹陷部26b係形成於接觸部25上，但不以此為限。凹 陷部26b可形成於延伸部23之第二樑23b上，而凸部26a 可形成於接觸部25上。 如上所述，本發明第一實施例之變形例藉由將樞紐結構 設置於延伸部23與接觸部25之間，故即便施力也不會傳 送力矩，因此可大幅減少應力集中。 如第6圖所示，本發明第二實施例之懸臂式微探針係由一 連接於一探針卡（未圖示）之連接部31、一係由該連接 部31以側向延伸之延伸部33、及一具有一尖端37之接觸 部35所構成，該尖端係由該延伸部33之一端部突出所形 成並與半導體晶片之銲墊接觸，如本發明第一實施例所 098146044 表單編號A0101 第11頁/共28頁 0993114578-0 201122495 述。 [0055] 另外，如第6圖所示，本實施例之懸臂式微探針之延伸部 33包括上下排列的一第一樑33a及一第二樑33b，且具有 一雙樑結構，其中於該第一與第二樑33a和33b之間形成 一長狹縫形開口 33c。 [0056] 另外，如第6圖之部分放大圖所示，本變形例之雙樑懸臂 式微探針具有一樞紐結構，該枢紐結構係於延伸部33與 接觸部35之間，更具體而言，係於延伸部33之第二樑33b 與接觸部35之間包括一間隙34、一凸部36a及一凹陷部 36b。 [0057] 在第6圖中，凸部36a係形成於延伸部33之第二樑33b上 ，而凹陷部36b係形成於接觸部35上，但不以此為限。凹 陷部36b可形成於延伸部33之第二樑33b上，而凸部36a 可形成於接觸部35上。 [0058] 根據本實施例之懸臂式微探針，該延伸部具有一波紋管 狀雙樑結構，該結構係於不同方向上彎曲，同時具有至 少一反曲點，而不像第一實施例及其變形例具有接近筆 直的雙樑形狀。 [0059] 在第6圖中，延伸部33係由分別形成不同形狀的第一樑 33a及第二樑33b所構成，但是當形成本發明第二實施例 之波紋管狀延伸部時，該第一樑及該第二樑可形成相同 的形狀。 [0060] 換言之，當該延伸部係由形成相同形狀的第一及第二樑 所構成時，該第一及第二樑之曲線方向改變處的反曲點 098146044 表單編號A0101 第12頁/共28頁 0993114578-0 201122495 [0061] 位置及該反曲點之切線斜率可以是相同的。另外，告該 =部係由形成不同形狀的第-及第二樑所構成時:; 支4第-及第—標之曲線方向改變處的反曲點位置及 遠反曲點之切線斜率至少其中之—或兩者。 另外，也可將該第一及第 狀’以取代將該第一及第 一樑至少其中之一形成波紋管 二樑均形成波紋管狀。 [0062] Ο ^圖所示’若雙樑微探針具枝紋管形狀，則可縮短 十身長度’同時可防止出平面行爲。出平面行爲發生時 /目鄰探針可能會互板干擾，故應在設計上消除出平面 什爲發生的可能性。 [0063] 當平面内抗_性小於平㈣抗彎剛性時，會產生出平 面仃爲，出平面行爲往往是由探針製程中無法避免的製 程誤差所導致。但由於第二實_之具有波紋管狀雙標 形狀的探針具有能降低平面内剛性而不受平面外剛性影 響的特性，因此可防止出平面行爲 Ο [m] 第二實施例之波紋管狀雙樑探針可以缓和應力、縮短針 臂、且同時可防止出平面行爲。此外，如上所述，根據 本實施例，於延伸部33與接觸部35之間形成樞紐結構時 ，即便施力也不會傳送力矩，因此可大幅減少應力集中 [0065] 098146044 另外，可使用電沈積法製作本實施例之懸臂式微探針， 因此能容易地製作出複雜的波紋管形狀。 如第7圖所示，本發明第二實施例之變形例之懸臂式微探 針係由一連接於一探針卡（未圖示）之連接部41、一係 第〗3頁/共28頁 表單編號A0101 0993114578-0 [0066] 201122495 由該連接部41以側向延伸之延伸部4 3、及一具有一尖端 47之接觸部45所構成，該尖端係由該延伸部43之一端部 突出所形成並與半導體晶片之銲墊接觸，如本發明第二 實施例所示者。 [0067] 另外，本變形例之懸臂式微探針之延伸部43具有波紋管 形狀，如第7圖所示，包括上下排列的一第一樑43a及一 第二樑43b，且具有一雙樑結構，其中於該第一與第二樑 43a和43b之間形成一長狹縫形開口 43c。 [0068] 另外，如第7圖之部分放大圖所示，本變形例之雙樑懸臂 式微探針具有一樞紐結構，該樞紐結構係於延伸部43與 接觸部45之間，更具體而言，係於延伸部43之第二樑43b 與接觸部45之間包括一間隙44、一凸部46a及一凹陷部 46b 〇 [0069] 根據第二實施例，凹陷部36b具有接近半圓的形狀，因此 包圍將近一半的凸部36a，但根據本變形例，第一樑43a 與接觸部45相連處係形成一突出部46c，故可使凹陷部 46b延伸。因此，與第二實施例的凹陷部36b相比，本變 形例可形成包圍超過一半凸部46a的凹陷部46b，故可以 更穩固地形成樞紐結構。 [0070] 為了正常操作樞紐，較佳為使突出部46c與第二樑43b分 開超過一預定距離，以防止突出部46c的末端在探針變形 時受到第二樑23b的干擾。 [0071] 在第7圖中，凸部46a係形成於延伸部43之第二樑43b上 ，而凹陷部46b係形成於接觸部45上，但不以此為限。凹 098146044 表單編號A0101 第14頁/共28頁 0993114578-0 201122495 [0072] [0073] Ο [0074] 〇 _ 陷部他可形成於該延伸部之該第二標杨上，而該凸部 可形成於該接觸部上。 所述本變形例藉由將樞紐結構設置於延伸部43與 接觸。IM5之間，故即便施力也不會傳送力矩因此可大 幅減少應力集中。 參閲第8圖和第9圖，其係表示本發明第三及第四實施例 ^是式微探針。第8圖和第9圖係用以說明設定於雙樑 懸臂式微探針之第·樑與第二樑之間的角度al和a2。第8 圖係表不具有波紋管型延伸部之探針，而第9圖係表示具 有筆直Up之探針。雖然樞紐結構未圖示於第8圖和第 9圖中仁此等實施例之微探針具有與第*圖至第7圖所示 之樞紐部相同結構的柩紐部。 根據此等實_之懸臂式微探針，當接觸部之尖端在半 導體晶片試驗過程中與半導體晶片之_接觸而使負載 作用於該探針時’與f知探針相比，可縮短針臂長度。 於該雙樑懸臂式微探針中’藉由設定使第二樑的針臂長 度大於第-樑的針臂長度，可產生相對於弧形探針尖端， 的轉動。其結果可縮短針臂。 [0076] 如第8圖及第9圖所述及圖示者，於第一與第二襟之間可 設置傾斜角al或a2，以設定使第二樑的針臂長度大於第 -樑的針臂長度。或者，可設定使第二樑的長度大於第 一樑的長度或疋可使第一樑成為凸面向上（c〇nvex upward) 而可使 第一樑成為凸 面向下 （c〇nvex d〇wnward) ，以设疋使第一樑的針臂長度大於第一樑的針臂長度。 098146044 表單編號A0101 第15 頁/共28頁 0993114578-0 201122495 [0077] 請參閱第8圖及第9圖，傾斜角ai和a2為延伸部中，虛線 所形成的角度，其中連接第一樑連接部之端部與接觸部 之端部的虛線及連接第二樑連接部之端部與接觸部之端 部的虛線係設定為彼此相交。 [0078] [0079] [0080] [0081] 於上述懸臂式微探針中，比較延伸部13、23、33和43與 接觸部15、25、35和45之間的樞紐結構在接觸之前與之 後的情況，在接觸之前，只有第一樑13a、23a、33&和 43a受到負載，但在接觸之後，第一樑13a、23a、33"〇 43a連同第二樑13b、23b、33b和43b都會受到負載，所 以探針剛性在接觸之前輿之後可能有所不同。因此，利 用槐紐結構之間隙14、24、34和44的大小作為設計變數 ，使本發明實施例之探針具有可變剛性。 另外，本發明實施例之懸臂式微探針，其連接部u、Η 、31和41與延伸部13、23、33和43可由選自包括錄錦 合金、及碟青銅之組群的金屬材料所製成，且接觸部 ' 25、35和45可由選自包括鈷、鈷合金、铑、铑合金、 及其合金之組群的金屬材料所製成。 另外，可使践沈料製作料實_之料式微探針 ’因此能容易地製作出複雜的波紋管形狀或樞组結構。 另外’雖然第4圖至第7圖中的樞紐結構之凸部及凹陷部 係形成圓形，但只要能作為樞紐，亦可形成例如擴圓形 、二角形、或四邊形等多邊形。[0039] 098146044 As shown in FIG. 4, the cantilever type microprobe according to the first embodiment of the present invention includes a connecting portion 1 connected to a probe card (not shown); The connecting portion 11 is laterally extended; the contact portion 15 has a tip end 1', and a portion of the extension portion 13 of the system (4) is formed in contact with the pad of the semiconductor wafer. ~ The extension 13 of the cantilever type microprobe of the present embodiment has a double form number Α0101, page 8 / total 28 pages ° "3114578-0 201122495 [0040] 'The extension 13 includes up and down - 襟 13a And a first - 13b, and a county (4) port 13e is formed between the first and second beams 133 and Handi. The slit of the mouth is formed inside the extending portion 13, and may extend to the connecting portion 11 or the contact portion 15 as designed. Further, the double beam (four) type micro probe of the present embodiment is interposed between the extending portion 13 and the contact portion 15, and more specifically, as shown in a partially enlarged view of Fig. 4, the second beam 13b of the extending portion 13 Between the contact Λ σ 1 b and the contact Λ 1 b Ο [0041] The hinge portion includes a shape corresponding to one of the convex 1 β Ώ 丨 1 ba and a depressed portion 16b, when an external force acts on the probe, the extension The second beam 13b of the portion of the silver ±5 and the contact portion 15 are in contact with each other to form a hinge monument. When no external force acts on the probe, the gap 14 is formed between the second ridge of the extension 13 and the contact portion 15 to keep them separated. [0042] The convex portion 16a serves as a center of rotation and the concave portion 16b guides the convex portion i6a as a center of rotation. In the fourth embodiment, the convex portion 16a is formed on the second beam 13b of the extending portion, and the concave portion 16b is formed on the contact portion 15 without being limited thereto. According to a variant, the recess can be formed on the second beam of the extension and the projection can be formed on the contact. [0043] In the case of the above configuration, the cantilever type microprobe of the present embodiment contacts the tip of the contact portion 15 during contact with the pad of the semiconductor wafer during the semiconductor wafer test to cause a load to act on the probe. The first beam 13a connected to the portion 15 is deformed first. When the displacement is greater than the gap 14 due to the deformation of the first beam 13a, the extension portion 13 and the contact portion 15, that is, the second beam 13b and the contact portion 15 of the extension portion 13 are brought into contact with each other to make the second - 098146044 form number A0101 Page 9 of 28 °"3114578-0 201122495 13b variant. In this case, when the convex portion 16a comes into contact with the concave portion 16b, the force is transmitted from the contact portion 15 to the second beam 13b of the extending portion 13. However, since the gap 14 between the second beam 13b of the extension portion 13 and the contact portion 15 is not directly connected, the second beam 13b and the contact portion 15 of the extension portion 13 are only when the displacement is larger than the gap 14. Real contact with each other allows the force to be transmitted. [0045] As shown in the prior art, when the semiconductor wafer is applied during the test, the structure in which the extension portion and the contact portion directly contact each other is subjected to a moment, so the stress is concentrated on the meeting of the first beam and the second beam. At the office. However, as shown in the present embodiment, the neon structure is formed between the extending portion 13 and the contact portion 15, so that no moment is transmitted even if a force is applied, whereby stress concentration can be greatly reduced. [0047] As shown in FIG. 5 and the first embodiment, the cantilever type microprobe according to the modification of the first embodiment of the present invention is connected to a connecting portion 21 (not shown) of a probe card (not shown). The connecting portion 21 is formed by a laterally extending extending portion 23 and a contact portion 25 having a tip end 27 formed by projecting one end portion of the extending portion 23 and contacting the pad of the semiconductor wafer. [0048] In addition, the extension portion 23 of the cantilever type microprobe of the present modification includes a first beam 23a and a second beam 23b arranged up and down, and has a gap formed between the first and second beams 23a and 23b. The double beam shape of the long slit-shaped opening 23c [0049] In addition, as shown in a partially enlarged view of FIG. 5, the double beam cantilever type microprobe of the present modification has a hinge structure, and the hinge structure is attached to the extension portion 23 098146044 Form No. A0101 Page 10 / Total 28 Page 0993114578-0 201122495 Between the contact portions 25, more specifically, between the second beam 23b of the extension portion 23 and the contact portion 25 includes a gap 24, a convex a portion 26a and a recess 26b. [0054] According to the first embodiment, the depressed portion 16b has a shape close to a semicircle, thus surrounding nearly half of the convex portion 16a, but according to the present modification, the first beam A portion 26c is formed in contact with the contact portion 25, so that the recess portion 26b can be extended. Therefore, the modification of the present invention can form the recessed portion 26b surrounding the more than half of the convex portion 26a as compared with the depressed portion 16b of the first embodiment, so that the hinge structure can be formed more stably. In order to operate the hinge normally, it is preferable to separate the projection 26c from the second beam 23b by more than a predetermined distance to prevent the end of the projection 26c from being disturbed by the second beam 23b when the probe is deformed. In the fifth embodiment, the convex portion 26a is formed on the second beam 23b of the extending portion 23, and the concave portion 26b is formed on the contact portion 25, but is not limited thereto. The recessed portion 26b may be formed on the second beam 23b of the extending portion 23, and the convex portion 26a may be formed on the contact portion 25. As described above, according to the modification of the first embodiment of the present invention, since the hinge structure is provided between the extending portion 23 and the contact portion 25, the torque is not transmitted even if the force is applied, so that the stress concentration can be greatly reduced. As shown in FIG. 6, the cantilever type micro-probe according to the second embodiment of the present invention has a connecting portion 31 connected to a probe card (not shown), and an extension extending laterally from the connecting portion 31. a portion 33, and a contact portion 35 having a tip end 37 formed by projecting one end portion of the extending portion 33 and contacting the pad of the semiconductor wafer, as in the first embodiment of the present invention, 098146044 A0101 Page 11 of 28 pages 0993114578-0 201122495. [0055] In addition, as shown in FIG. 6, the extension portion 33 of the cantilever type microprobe of the present embodiment includes a first beam 33a and a second beam 33b arranged up and down, and has a double beam structure, wherein A long slit-shaped opening 33c is formed between the first and second beams 33a and 33b. [0056] In addition, as shown in a partially enlarged view of FIG. 6, the double beam cantilever type microprobe of the present modification has a hinge structure which is between the extending portion 33 and the contact portion 35, more specifically Between the second beam 33b and the contact portion 35 of the extending portion 33, a gap 34, a convex portion 36a and a concave portion 36b are included. [0057] In FIG. 6, the convex portion 36a is formed on the second beam 33b of the extending portion 33, and the concave portion 36b is formed on the contact portion 35, but is not limited thereto. The recessed portion 36b may be formed on the second beam 33b of the extending portion 33, and the convex portion 36a may be formed on the contact portion 35. [0058] According to the cantilever type microprobe of the embodiment, the extension portion has a corrugated tubular double beam structure which is bent in different directions while having at least one inflection point, unlike the first embodiment and The modification has a nearly double beam shape. [0059] In FIG. 6, the extending portion 33 is constituted by the first beam 33a and the second beam 33b which respectively form different shapes, but when forming the bellows-shaped extension of the second embodiment of the present invention, the first The beam and the second beam can form the same shape. [0060] In other words, when the extension is formed by the first and second beams forming the same shape, the inflection point of the first and second beams changes in the direction of the curve 098146044 Form No. A0101 Page 12 / Total Page 28 0993114578-0 201122495 [0061] The position and the tangent slope of the inflection point may be the same. In addition, when the = part is formed by the first and second beams forming different shapes: the position of the inflection point of the change of the direction of the curve of the branch 4 and the first mark and the tangent slope of the far inflection point are at least Among them - or both. Alternatively, the first and second shapes may be formed to form a bellows by replacing at least one of the first and first beams with the bellows. [0062] If the double beam microprobe has a dendritic tube shape, the length of the body can be shortened while preventing the out-of-plane behavior. When the out-of-plane behavior occurs, the /proximate probe may interfere with each other, so the possibility of the plane occurring should be eliminated. [0063] When the in-plane resistance is less than the flat (four) bending rigidity, a flat surface is generated, and the outgoing plane behavior is often caused by process errors that cannot be avoided in the probe process. However, since the probe having the bellows-shaped double-standard shape of the second embodiment has the property of reducing the in-plane rigidity without being affected by the out-of-plane rigidity, the plane behavior can be prevented. [m] The bellows type of the second embodiment Beam probes can alleviate stress, shorten the needle arm, and at the same time prevent out-of-plane behavior. Further, as described above, according to the present embodiment, when the hinge structure is formed between the extending portion 33 and the contact portion 35, the moment is not transmitted even if the force is applied, so that the stress concentration can be greatly reduced [0065] 098146044 In addition, electrodeposition can be used. The cantilever type microprobe of this embodiment was fabricated, so that a complicated bellows shape can be easily produced. As shown in Fig. 7, a cantilever type microprobe according to a modification of the second embodiment of the present invention has a connection portion 41 connected to a probe card (not shown), a system of 3 pages/28 pages in total. Form No. A0101 0993114578-0 [0066] 201122495 is constituted by the connecting portion 41 with a laterally extending extension portion 43 and a contact portion 45 having a tip end 47 which is protruded from one end portion of the extending portion 43 It is formed and brought into contact with a pad of a semiconductor wafer as shown in the second embodiment of the present invention. [0067] In addition, the extension portion 43 of the cantilever type microprobe of the present modification has a bellows shape, as shown in FIG. 7, including a first beam 43a and a second beam 43b arranged up and down, and has a double beam. The structure in which a long slit-shaped opening 43c is formed between the first and second beams 43a and 43b. [0068] In addition, as shown in a partially enlarged view of FIG. 7, the double beam cantilever type microprobe of the present modification has a hinge structure which is between the extension portion 43 and the contact portion 45, more specifically Between the second beam 43b of the extending portion 43 and the contact portion 45, a gap 44, a convex portion 46a and a recess portion 46b are included. [0069] According to the second embodiment, the recess portion 36b has a shape close to a semicircle. Therefore, nearly half of the convex portion 36a is surrounded, but according to the present modification, the protruding portion 46c is formed by the first beam 43a being connected to the contact portion 45, so that the concave portion 46b can be extended. Therefore, compared with the depressed portion 36b of the second embodiment, the present modification can form the depressed portion 46b surrounding the more than half of the convex portion 46a, so that the hinge structure can be formed more stably. [0070] In order to operate the hinge normally, it is preferable to separate the projection 46c from the second beam 43b by more than a predetermined distance to prevent the end of the projection 46c from being disturbed by the second beam 23b when the probe is deformed. [0071] In FIG. 7, the convex portion 46a is formed on the second beam 43b of the extending portion 43, and the concave portion 46b is formed on the contact portion 45, but is not limited thereto. Concave 098146044 Form No. A0101 Page 14 / Total 28 Page 0993114578-0 201122495 [0073] [0074] 〇 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Formed on the contact portion. The present modification is in contact with the extension portion 43 by providing the hinge structure. Between the IM5s, even if the force is applied, the torque is not transmitted, so the stress concentration can be greatly reduced. Referring to Figures 8 and 9, there are shown the third and fourth embodiments of the present invention. Fig. 8 and Fig. 9 are diagrams for explaining the angles a1 and a2 set between the first beam and the second beam of the double beam cantilever type microprobe. Fig. 8 shows a probe having no bellows type extension, and Fig. 9 shows a probe having a straight Up. Although the pivot structure is not illustrated in Figures 8 and 9, the microprobes of the embodiments have the same structure as the hinges shown in Figures 7 through 7. According to such a cantilever microprobe, when the tip of the contact portion is in contact with the semiconductor wafer during the semiconductor wafer test, the load acts on the probe, and the pin arm can be shortened compared with the f probe. length. In the double beam cantilever microprobe, the rotation of the tip of the curved probe can be generated by setting the length of the arm of the second beam to be greater than the length of the arm of the first beam. As a result, the needle arm can be shortened. [0076] As shown and illustrated in FIGS. 8 and 9 , an inclination angle a1 or a2 may be set between the first and second turns to set the length of the second arm to be greater than the first beam. Needle arm length. Alternatively, the length of the second beam may be set to be greater than the length of the first beam or the first beam may be convexly facing upward (c〇nvex upward) and the first beam may be convexly facing downward (c〇nvex d〇wnward) The length of the needle arm of the first beam is greater than the length of the needle arm of the first beam. 098146044 Form No. A0101 Page 15 of 28 0993114578-0 201122495 [0077] Referring to Figures 8 and 9, the angles of inclination ai and a2 are the angles formed by the dashed lines in the extension, wherein the first beam connection is connected The dotted line at the end of the portion and the end portion of the contact portion and the broken line connecting the end portion of the second beam connecting portion and the end portion of the contact portion are set to intersect each other. [0086] In the above cantilever type microprobe, the pivot structure between the extension portions 13, 23, 33, and 43 and the contact portions 15, 25, 35, and 45 is before and after the contact. In the case, before the contact, only the first beams 13a, 23a, 33 & and 43a are loaded, but after the contact, the first beams 13a, 23a, 33 " 〇 43a together with the second beams 13b, 23b, 33b and 43b will Subject to load, the probe stiffness may differ after sputum exposure. Therefore, the size of the gaps 14, 24, 34, and 44 of the neon structure is used as a design variable to make the probe of the embodiment of the present invention variable in rigidity. Further, in the cantilever type microprobe according to the embodiment of the present invention, the connecting portions u, 、, 31 and 41 and the extending portions 13, 23, 33 and 43 may be made of a metal material selected from the group consisting of a record alloy and a disc bronze. The contact portions '25, 35, and 45 may be made of a metal material selected from the group consisting of cobalt, cobalt alloys, tantalum, niobium alloys, and alloys thereof. In addition, the micro-probes can be made to make a complicated bellows shape or a hinge structure. Further, although the convex portion and the concave portion of the hinge structure in Figs. 4 to 7 are formed in a circular shape, a polygonal shape such as an expanded circular shape, a polygonal shape, or a quadrangular shape may be formed as long as it can serve as a hinge.
以上所述僅為舉例性’而非為限制性者。任何未脫離本 發明之精神與範4，而對其進行之等效修改或變更均 098146044 表單編號A0101 第16頁/共28頁 0993114578-0 [0082] 201122495 應包含於後附之申請專利範圍中β 【圖式簡單說明】 [0083] ❹ G [0084] 第1圖係習知技術之單懸臂式微探針示意圖； 第2圖係習知技術之具有雙樑之懸臂式微探針示意圖； 第3圖係習知技術之具有波紋管狀雙樑之懸臂式微探針示 意圖； μ 第4圖係本發明第一實施例之具有柩紐結構之雙樑懸臂 微探針示意圖； 第5圖係本發明第一實施例之變形例之具有樞紐結構之雙 樑懸臂式微探針示意圖； 第6圖係本發明第二實施例之具有樞紐結構之波紋管狀雙 樑懸臂式微探針示意圖；：1 ; , 第7圖係本發明第二實施例之變形例之具有樞紐結構之波 紋管狀雙樑懸臂式微探針示意圖； 第8圖係供以說明本發明第三實施例之懸臂式微探針；及 第9圖係供以說明本發明第四實施例之懸臂式微探針。 【主要元件符號說明】 11、21、31、41:連接部 13、 23、33、43 :延伸部 13a、23a、33a、43a :上樑 13b、23b、33b、43b :下樑 13c、23c、33c、43c :開口 14、 24、34、44 :間隙 15、 25、35、45 :接觸部 16a、26a、36a、46a :凸部 098146044 表單編號A0101 第17頁/共28頁 0993114578-0 201122495 16b、26b、36b、46b :凹陷部 26c、46c :突出部 17 ' 27 ' 37 ' 47 : A端 098146044 表單編號A0101 第18頁/共28頁 0993114578-0The above is intended to be illustrative only and not limiting. Any equivalent modification or modification without departing from the spirit and scope of the present invention is 098146044. Form No. A0101 Page 16 of 28 0993114578-0 [0082] 201122495 shall be included in the scope of the appended patent application. β [Simplified description of the schema] [0083] FIG. 1 is a schematic diagram of a single cantilever microprobe of the prior art; FIG. 2 is a schematic diagram of a cantilever microprobe having a double beam according to the prior art; Figure 4 is a schematic view of a cantilevered microprobe having a corrugated tubular double beam; μ Fig. 4 is a schematic view of a double beam cantilever microprobe having a neon structure according to a first embodiment of the present invention; Schematic diagram of a double-beam cantilever type micro-probe having a hinge structure according to a modification of an embodiment; FIG. 6 is a schematic view of a corrugated-tube double-beam cantilever type micro-probe having a hinge structure according to a second embodiment of the present invention; Figure 2 is a schematic view showing a corrugated tubular double-beam cantilever type micro-probe having a hinge structure according to a modification of the second embodiment of the present invention; Figure 8 is a view showing a cantilever type micro-probe according to a third embodiment of the present invention; Give A cantilever type microprobe according to a fourth embodiment of the present invention. [Description of main component symbols] 11, 21, 31, 41: connecting portions 13, 23, 33, 43: extending portions 13a, 23a, 33a, 43a: upper beams 13b, 23b, 33b, 43b: lower beams 13c, 23c, 33c, 43c: openings 14, 24, 34, 44: gaps 15, 25, 35, 45: contact portions 16a, 26a, 36a, 46a: convex portion 098146044 Form No. A0101 Page 17 of 28 0993114578-0 201122495 16b , 26b, 36b, 46b: recessed portions 26c, 46c: protruding portion 17 ' 27 ' 37 ' 47 : A terminal 098146044 Form number A0101 Page 18 / 28 pages 0993114578-0