201113477 六、發明說明： 【發明所屬之技術領域】 本發明係關於在液晶面板等顯示 ’作爲用以將2枚透光性基板藉由光 合之顯示器面板的貼合裝置的光源加 【先前技術】 近年來，在液晶面板中，以對比β 改善作爲目的，開發出一種藉由聚合衫 分子之配向方向的 PSA( Polymer Sus 方式或PSVA方式，來取代形成在晶班 在該PSA方式之液晶面板的製造 有光聚合性成分的液晶材料注入晶胞 的液晶材料施加電壓，一面照射紫外 成聚合物構造物。在將該液晶材料留 一的液晶滴下工法（One Drop Fill， 成晶胞之其中一方透光性基板的表面 ，藉此形成框狀的密封劑層，在該其 表面中的密封劑層所包圍的區域，塗 料之後，將另一方透光性基板加以疊 由顯示器面板的貼合裝置對密封劑層 硬化而將2枚透光性基板加以貼合。 面板的製造工程中 化型密封劑加以貼 使用的光照射裝置 丨提升與響應速度的 丨構造物來限制液晶 tained Alignment ) 3內部的隔壁層構造 ^程中，係進行將含 丨，一面對所被注入 〖，藉此在晶胞內形 ί液晶面板之手法之 ί稱ODF)中，在構 【佈光硬化型密封劑 | 一方透光性基板之 i含有單體的液晶材 Γ，在該狀態下，藉 (射光，使該密封劑 L後，對液晶材料所 -5- 201113477 含單體照射紫外線，藉此形成聚合物構造物，形成被注入 有液晶材料的晶胞。 接著，以光硬化型密封劑而言，爲了在被照射光時， 液晶材料中所含有之光聚合性成分的聚合反應不會進行， 使用其感度波長範圍移位至比液晶材料中之光聚合性成分 的感度波長範圍爲更長波長側者。 另一方面，在顯示器面板的貼合裝置中，以用以對密 封劑層照射光的光源而言，採用具有放射光硬化型密封劑 之感度波長範圍之光的燈、及將短波長側的光予以遮蔽的 濾波器而成的光照射裝置（參照專利文獻1 )。 [先前技術文獻] [專利文獻] [專利文獻1]日本特開2003-149647號 【發明內容】 (發明所欲解決之課題） 但是’在如上所示之光照射裝置中，係有以下所示之 問題。 (1 ) 一般而言，燈由開始亮燈至達到定常亮燈狀態 爲止，需耗費相當時間，亦即難以瞬時亮燈，因此在光照 射裝置中，藉由設置快門機構，在將燈連續亮燈的狀態下 ，藉由快門機構的快門的開閉，在必要時對照射對象物照 射光。因此，會有能量效率較低，而且快門機構中的可動 零件容易導致故障’裝置的可靠性較低的問題。 -6- 201113477 (2)燈的發光頻譜係其波長範圍爲例如波長200〜 600nm (參照專利文獻1的段落023 8 )，與光硬化型密封 劑之感度波長的200〜450nm(參照專利文獻1的段落 0 2 4 4 )相比較，長波長側相當寬，而且，短波長側的波長 範圍的光被濾波器所遮蔽，因此會有光利用效率極低的問 題。 (3 )以濾波器而言，一般係採用具有介電質多層膜 的濾波器，但是在如上所示之濾波器中，入射角依存性明 顯，亦即依光的入射角度，要充分遮蔽所預期的波長範圍 的光乃極爲困難。因此，以防止對液晶材料照射光爲目的 ’通常雖使用遮罩，但是該遮罩必須按照應製造之顯示器 面板的形態或尺寸等來準備，因此會有製造成本增大的問 題。 本發明係基於以上所示情形而硏創者，其目的在提供 一種光照射裝置，其係P S A方式顯示器面板之貼合裝置所 使用的光照射裝置，例如無須使液晶材料所含有之光聚合 性成分的聚合反應進行，即可以較高的光利用效率，對密 封劑層照射光而予以硬化。 (解決課題之手段） 本發明之光照射裝置係含有感度波長範圍位於一定範 圍之光聚合性成分的光聚合性材料層、及由包圍該光聚合 性材料層之感度波長範圍位於比前述光聚合性成分的感度 波長範圍爲更長波長側的光硬化型密封劑所構成的密封劑 201113477 層，在形成於2枚透光性基板之間的狀態下，對該密封劑 層照射光，藉此貼合前述2枚透光性基板的顯示器面板的 貼合裝置所使用的光照射裝置，其特徵爲： 具有：LED元件、及將在比該LED元件的發光峰値 波長爲更短波長側、且比該LED元件的發光頻譜的最短 波長爲更長波長側具有截止波長的短波長側的光進行遮蔽 的濾波器，由前述LED元件所發出的光透過前述濾波器 而被照射在前述密封劑層。 在本發明之光照射裝置中，最好前述濾波器的截止波 長係位於比前述光聚合性成分之感度波長範圍之長波長側 端爲更長波長側。 此外，最好前述LED元件的複數被配置在同一基板 上而成的複數光源片段，以沿著該基板的面方向排列的方 式作配置所構成。 此外，亦可具有收納前述LED元件而成的LED封裝 體，在該LED封裝體設有前述濾波器。 (發明之效果） 藉由本發明之光照射裝置，將發光頻譜的波長範圍較 窄之來自LED元件的光，透過在比該LED元件的發光峰 値波長爲更短波長側、且比該LED元件的發光頻譜的最 短波長爲更長波長側具有截止波長的濾波器進行照射，因 此所被照射的光的波長分布爲極窄。因此，按照構成密封 劑層的光硬化型密封劑的感度波長範圍、及光聚合性材14 -8 - 201113477 層中的光聚合性成分的感度波長範圍，來選擇led元件 ’藉此無須使光聚合性材料層中的光聚合性成分進行聚合 反應’即可以較高的光利用效率，對密封劑層照射光來進 行硬化。 此外’ LED元件係從開始亮燈起至達到定常亮燈狀態 爲止的時間極短’亦即可瞬時亮燈，因此不需要連續亮燈 及設置快門機構，因此，可得較高的能量效率，並且可得 較高的可靠性。 此外，以濾波器而言，藉由採用截止波長位於比光聚 合性材料層中的光聚合性成分的感度波長範圍的長波長側 端爲更長波長側者的構成，在對密封劑層照射光時，可確 實防止光聚合性材料層中之光聚合性成分進行聚合反應。 藉由LED元件的複數被配置在同一基板上而成的複 數光源片段，以沿著該基板的面方向排列的方式作配置的 構成，按照密封劑層的形態來選擇進行亮燈的光源片段， 藉此可對密封劑層選擇性地照射光，因此可得更高的能量 效率，並且不需要爲了選擇性地對密封劑層照射光而設置 遮罩，故可達成製造成本低減化。此外，光源片段中的一 個LED元件劣化時，藉由提高其他LED元件的照射強度 ，可照射以光源片段全體而言爲安定的光量的光。 此外，藉由具有收納LED元件而成的LED封裝體’ 在該LED封裝體設有濾波器的構成，由於不需要設置大 面積的濾波器，因此可達成濾波器成本低減化及生產性的 提升。 -9 - 201113477 【實施方式】 以下針對本發明之實施形態加以說明。 第1圖係顯示具備有本發明之光照射裝置之顯示器面 板之貼合裝置之一例中之槪略構成的說明圖。 在該顯示器面板的貼合裝置（以下僅稱之爲「貼合裝 置」）中，係在基台11上隔著支持台12設有供載置處理 對象物的載台10，在該載台10的上方係配置有本發明之 光照射裝置1 5。 該貼合裝置的處理對象物1係在2枚透光性基板4之 間形成光聚合性材料層2、及以包圍該光聚合性材料層2 周圍的方式所包圍的密封劑層3而成者。該例之處理對象 物1係用以製造合計4個顯示器面板者，在該處理對象物 1中’係如第2圖所示，形成有彼此分離而縱橫排列的4 個光聚合性材料層2、及分別包圍一個光聚合性材料層2 的4個密封劑層3。 光聚合性材料層2係藉由感度波長範圍在一定範圍內 的光聚合性成分、及含有液晶成分而成的液晶材料所構成 。光聚合性材料層2中的光聚合性成分係含有單體 '及藉 由接受紫外線而發生自由基或陽離子等活性種的光聚合起 始劑而成。該光聚合性成分的感度波長範圍係藉由選擇光 聚合起始劑的種類來決定。 此外，密封劑層3係由光硬化型密封劑所構成，該光 硬化型密封劑係含有硬化性樹脂、及藉由接受紫外線而發 -10- 201113477 生自由基或陽離子等活性種的光聚合起始劑而成。光硬化 型密封劑係其感度波長範圍的長波長側端比光聚合性材料 層2中的光聚合性成分的感度波長範圍的長波長側端位於 更長波長側者。光硬化型密封劑的感度波長範圍係藉由選 擇光聚合起始劑的種類來決定。 此外，透光性基板4係藉由玻璃等所構成。 如上所示之處理對象物1係藉由在一方透光性基板4 的表面塗佈光硬化型密封劑，分別形成框狀的4個密封劑 層3，在該一方透光性基板4表面中的密封劑層3的各個 所包圍的區域塗佈含有光聚合性成分與液晶成分而成的液 晶材料，藉此在形成4個光聚合性材料層2之後，藉由對 一方透光性基板4，將另一方透光性基板在以預定間隔分 離的狀態下加以疊合而得。 圖示之例的光照射裝置1 5亦如第3圖所示，係以在 適當的支持體（圖示省略）上以縱橫排列複數光源片段20 的方式作配置所構成。 在光源片段20的各個，如第4圖所示，在同一矩形 基板21的表面配置複數LED元件25，在該等LED元件 25的各個表面，以覆蓋該LED元件25的方式設有濾波器 30 〇 此外，在基板21表面中的周緣部配置使內面作爲光 反射面的矩形筒狀導光構件26，在該基板2 1的背面設有 將LED元件25所發出的熱加以散熱的散熱用散熱片27。 以LED元件25而言，可使用含有銦（In)、鋁（A1 -11 - 201113477 )的氮化鎵（GaN )系LED。LED元件25的發光頻譜係 按照構成光聚合性材料層的光聚合性成分的感度波長範圍 、及構成密封劑層的光硬化型密封劑的感度波長範圍來作 選擇，藉由調整LED中的In、AlGa、N的組成比，可得 峰値波長例如由200nm至紅外區域的LED元件25，具體 而言，峰値波長由360〜420nm中作選擇。 此外，LED元件25之發光頻譜中之峰値波長的半帶 寬爲例如1 〇〜3 0 n m。 此外，光源片段20之各個中的LED元件25的數量 爲例如5〜1 6個。 濾波器3 0係遮蔽短波長側之光的低通濾波器，其截 止波長（光透過率爲5 〇%的波長）位於比LED元件25的 發光峰値波長更爲短波長側，而且位於比該LED元件25 的發光頻譜的最短波長爲更長波長側者。以該濾波器3 0 而言，係可使用具有介電質多層膜者。 此外，濾波器3 0係較佳爲其截止波長比光聚合性材 料層2中之光聚合性成分之感度波長範圍的長波長側端位 於更長波長側，藉此，當對密封劑層3照射光時，可確實 防止光聚合性材料層2中的光聚合性成分進行聚合反應。 在上述光照射裝置1 5中，所有光源片段20之中，按 照處理對象物1中的密封劑層3的形狀所選擇的光源片段 20進行作動，藉此使該光源片段20中來自LED元件25 的光透過濾波器3 0而由導光構件2 6的光出射部2 8出射 ，被照射在被配置在貼合裝置的載台1 0上的處理對象物1 -12- 201113477 中的密封劑層3，藉此使密封劑層3硬化。 以上，LED元件25係如第5圖以模式顯示般，爲 有曲線（L)所示之發光頻譜者，但是濾波器30爲具有 線（F )所示之分光特性者，亦即爲具有比LED元件 的發光峰値波長爲更短波長側、且爲該LED元件25的 光頻譜的最短波長爲更長波長側的截止波長的低通濾波 ，因此LED元件25所發出的光之中，比濾波器30之 止波長爲更短波長側之波長的光（第5圖中斜線部分的 )係被該濾波器3 0所遮蔽。 藉由如上所示之光照射裝置1 5，將來自發光頻譜的 長範圍較窄的LED元件25的光，透過在比該LED元 2 5的發光峰値波長爲更短波長側、且比該LED元件2 5 發光頻譜的最短波長爲更長波長側具有截止波長的濾波 30進行照射，因此成爲所被照射的光的波長分布爲極窄 。密封劑層3的感度波長範圍係以短波長側爲較高，但 以顯示器面板貼合裝置的光源而言，並無法照射光聚合 材料層2中之光聚合性成分的感度波長範圍的光。因此 藉由濾波器來遮蔽比來自LED元件的光的發光峰値波 爲更短波長側的光，藉此可更強照射爲在光聚合性材料 2中之光聚合性成分的感度波長範圍之外的波長區域、 構成密封劑層3之光硬化型密封劑的感度較高的短波長 域的光。藉此，可在不會使光聚合性材料層2中之光聚 性成分進行聚合反應的情形下，以較高的光利用效率， 密封劑層3照射光而進行硬化。 具 曲 25 發 器 截 光 波 件 的 器 者 是 性 » 長 層 且 區 合 對 -13- 201113477 此外’ LED元件25係從開始亮燈起至到達定常亮燈 狀態爲止的時間極短，亦即可瞬時亮燈，因此不需要連續 亮燈及設置快門機構，因此可得較高的能量效率，並且可 得較高的可靠性。 具有複數LED元件25被配置在同一基板21上而成 的複數光源片段20’該等光源片段20以沿著基板21之面 方向排列的方式作配置，因此將所亮燈的光源片段20按 照密封劑層3的形態來作選擇，藉此可對密封劑層3選擇 性地照射光，因此可得更高的能量效率，並且不需要爲了 選擇性地將光照射在密封劑層3而設置遮罩，因此可達成 製造成本的低減化。此外，光源片段20中的一個LED元 件25發生劣化時，係藉由提高其他LED元件25的照射 強度，即可照射以光源片段20全體而言呈安定的光量的 光。 第6圖係顯示本發明之光照射裝置之其他例中之光源 片段之構成的說明圖。 在該光源片段20中，係在同一矩形基板21的表面配 置複數LED封裝體35，在該基板21之表面中的周緣部配 置有使內面作爲光反射面的矩形筒狀導光構件26’在該基 板21的背面設有將LED封裝體35所發出的熱予以散熱 的散熱用散熱片27。 LED封裝體35的各個’如第7圖所示’係具有在中 央形成有矩形凹處37的封裝體基板36’在該封裝體基板 36的凹處37內配置有LED元件25’以閉塞該封裝體基 -14 - 201113477 板36之凹處37的方式設有板狀濾波器3〇。此外，28爲 導光構件26的光出射部。LED元件25及據波器30的特 性係與第4圖所示之光源片段20中者相同。 藉由如上所示之光照射裝置，獲得與第3圖及第4圖 所示光照射裝置爲相同的效果，並且具有收納LED元件 25而成的LED封裝體35，在該LED封裝體35設有濾波 器30，因此不需要設置大面積的濾波器30，結果，可達 成濾波器成本減低化及生產性提升。 本發明之光照射裝置並非限定於上述實施形態，亦可 添加各種變更。 (1 )在第4圖所示之光源片段20中，濾波器3〇如 第8圖所示，亦可爲具有透鏡機能之半球狀者。 此外，取代在LED元件25的各個設置濾波器30 ’如 第9圖所示，亦可爲在導光構件26之筒孔內的中央位置 設置1個濾波器30的構成。 此外，如第9圖所示，亦可在導光構件26之筒孔內 的前端側位置配置積分器透鏡29。 (2)在第6圖所示之光源片段2〇中’被設在LED 封裝輯35的濾波器30，如第10圖（a)所示’亦可爲具有 透鏡機能的半球狀者。 此外，在LED封裝體35，如第1〇圖（b)所示，亦可 在板狀濾波器3 0的表面設置透鏡3 1。 [實施例] -15- 5 201113477 〈實施例1 > 按照第3圖及第4圖所示構成，製作出使1 3 0個光源 片段以縱橫排列的方式作配置而成的光照射裝置。光源片 段的規格如以下所示。 基板（21)的縱橫尺寸爲50mmx 50mm，導光構件（ 26 )的全長爲45mm。 LED元件（25) 係發光頻譜的峰値波長爲3 8 5nm， 半帶寬爲±5 nm考，在1個光源片段設有9個。 濾波器（30)係具有介電質多層膜的低通濾波器，其 截止波長爲3 80nm者。 將該光照射裝置中的光源片段的發光頻譜圖顯示於第 1 1 圖（a)。 〈比較例1〉 以LED元件（2 5 ) 而言，使用發光頻譜的峰値波長 爲405nm、且半帶寬爲±8nm者，除了未設置媳波器（30 )以外，製作出與實施例1爲相同構成的光照射裝置。 將該光照射裝置中的光源片段的發光頻譜圖顯示於第 Π 圖（b)。 《密封劑的硬化試驗》 使用實施例1及比較例1之光照射裝置，如以下進行 密封劑的硬化試驗。 使用分別具有第1 2圖所代表之感度曲線的2種光硬 -16- S) 201113477 化型密封劑（將該等設爲「密封劑A」及「密封劑B」） ，在2枚透光性基板之間形成厚度爲數μηι的密封劑層。 在該等密封劑層，以照射面中的強度成爲155mW/cm2的 條件，藉由光照射裝置來照射光，測定出積算照射光量成 爲 5 00m J/cm2、75 0m J/cm2、1 000m J/cm2 及 2000mJ/cm2 時 的密封劑層的硬化率。 以上，密封劑層的硬化率係藉由FT-IR (傅立葉轉換 紅外吸收分光）法’藉由伴隨著藉由硬化反應而改變的化 學構造變化而改變的紅外吸收頻譜的解析來進行測定。具 體而言，根據其紅外吸收峰値的面積或高度來將藉由聚合 而消滅的化學結合的消耗量作定量’且根據該値而計算出 硬化率。 此外，在實用上，若硬化率爲8 0%以上’則判斷密封 劑層已硬化。 將以上結果顯示於表1。 【表1】 密封劑層之硬化率（％) 積算照射光量 500m J/cm2 750mJ/cm2 1000mJ/cm2 2000mJ/cm2 實施例1 密封劑A 80.9 82.2 82.7 82.3 密封劑B 81.5 81.5 81.5 82.3 比較例1 密封劑A 73 76.7 78.6 80.9 密封劑B 76.5 79.8 80.1 82.1 由表1的結果可清楚確認’在實施例1之光照射裝置 中，對於密封劑A及密封劑B之任一者’若以積算照射光 -17- 201113477 量爲500mJ/cm2以上的條件來照射光，即可予以硬化。 相對於此，在比較例1之光照射裝置中，爲了將密封 劑層硬化，必須以對密封劑 A係積算照射光量爲 2000mJ/cm2以上、對密封劑 B係積算照射光量爲 1 000mJ/cm2以上的條件來照射光。 第1 3圖係使光照射裝置的發光頻譜與光硬化型密封 劑的感度曲線相疊後的合成曲線圖，（A1 )係實施例1之 光照射裝置的發光頻譜與密封劑A的感度曲線相疊後的合 成曲線，（A 2 )係比較例1之光照射裝置的發光頻譜與密 封劑A的感度曲線相疊後的合成曲線。 在該等合成曲線中，各自的積分値可視爲平均單位照 射時間之光硬化型密封劑的反應量，（A 1 )的合成曲線的 積分値係（A 2 )的合成曲線的積分値的1 .6倍。 如上所示，可知藉由實施例1之光照射裝置，與比較 例1之光照射裝置相比較，可得較高的光利用效率。 【圖式簡單說明】 第1圖係顯示具備有本發明之光照射裝置之顯示器面 板之貼合裝置之一例中的槪略構成的說明圖。 第2圖係顯示第1圖所示顯示器面板之貼合裝置之處 理對象物的俯視圖。 第3圖係顯示本發明之光照射裝置之一例中的構成的 俯視圖。 第4圖係顯示第3圖所示之光照射裝置中的光源片段BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light source for displaying a liquid crystal panel or the like as a light-emitting device for bonding two light-transmissive substrates by means of a photosynthetic display panel. [Prior Art] In recent years, in the liquid crystal panel, in order to improve the contrast β, a PSA (Polymer Sus method or PSVA method) which polymerizes the alignment direction of the shirt molecules has been developed to replace the liquid crystal panel formed in the PSA mode. A liquid crystal material in which a photopolymerizable component is injected is applied to a liquid crystal material of a unit cell, and a UV-forming polymer structure is irradiated while the liquid crystal material is left. One Drop Fill is formed by one of the liquid crystal materials. The surface of the optical substrate, thereby forming a frame-shaped sealant layer, in the region surrounded by the sealant layer on the surface thereof, after the coating, the other light-transmissive substrate is laminated on the display panel by the display device The sealant layer is hardened and the two light-transmissive substrates are bonded together. The device 丨 丨 丨 丨 来 来 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 Align 3 Align Align Align Align Align Align Align Align Align Align Align Align Align Align Align Align Align Align Align In the method of "ODF", in the structure of "light-curing type sealant", one of the light-transmitting substrates i contains a liquid crystal material of a single body, and in this state, by (lighting, after the sealant L, The liquid crystal material is irradiated with ultraviolet rays to form a polymer structure to form a unit cell into which a liquid crystal material is injected. Next, in the case of a photocurable sealant, in order to be irradiated with light, The polymerization reaction of the photopolymerizable component contained in the liquid crystal material does not proceed, and the sensitivity wavelength range is shifted to a longer wavelength side than the sensitivity wavelength range of the photopolymerizable component in the liquid crystal material. In the bonding apparatus of the display panel, a light source for irradiating light to the sealant layer is used, and a light having a wavelength range of the sensitivity of the radiation-curable sealant and a light having a short-wavelength side are used. A light-emitting device using a filter (see Patent Document 1). [Prior Art Document] [Patent Document 1] [Patent Document 1] JP-A-2003-149647 [Summary of the Invention] However, in the light irradiation device as described above, the following problems are caused. (1) Generally, it takes a considerable time for the lamp to start lighting up until it reaches the steady lighting state, that is, it is difficult to instantaneously brighten. In the light irradiation device, by providing the shutter mechanism, the shutter is opened and closed by the shutter mechanism in a state where the lamp is continuously turned on, and the object to be irradiated is irradiated with light when necessary. Lower, and the movable parts in the shutter mechanism are prone to failures, and the reliability of the device is low. -6- 201113477 (2) The emission spectrum of the lamp is, for example, a wavelength range of 200 to 600 nm (refer to paragraph 0238 of Patent Document 1), and a sensitivity wavelength of 200 to 450 nm with the photocurable sealant (refer to Patent Document 1). In the paragraph 0 2 4 4 ), the long-wavelength side is relatively wide, and the light in the wavelength range on the short-wavelength side is shielded by the filter, so that the light utilization efficiency is extremely low. (3) In the case of a filter, a filter having a dielectric multilayer film is generally used, but in the filter as shown above, the incident angle dependence is conspicuous, that is, depending on the incident angle of the light, the shadow is sufficiently shielded. Light in the expected wavelength range is extremely difficult. Therefore, in order to prevent the liquid crystal material from being irradiated with light, a mask is usually used. However, the mask must be prepared in accordance with the form or size of the display panel to be manufactured, and thus the manufacturing cost is increased. The present invention has been made in view of the above circumstances, and an object thereof is to provide a light irradiation device which is a light irradiation device used in a bonding device of a PSA type display panel, for example, which does not require photopolymerization of a liquid crystal material. The polymerization reaction of the components proceeds, that is, the sealant layer can be hardened by irradiating light with high light utilization efficiency. (Means for Solving the Problem) The light-emitting device of the present invention contains a photopolymerizable material layer having a photopolymerizable component having a sensitivity wavelength range within a certain range, and a sensitivity wavelength range surrounding the photopolymerizable material layer is located at a ratio of the photopolymerization The sensitivity wavelength range of the component is a layer of the sealant 201113477 formed of a photocurable sealant on the longer wavelength side, and the sealant layer is irradiated with light in a state of being formed between the two light-transmitting substrates. A light-emitting device used in a bonding apparatus for a display panel in which the two light-transmissive substrates are bonded together is characterized in that: an LED element and a wavelength side shorter than a wavelength of an emission peak of the LED element; And a filter that blocks the short-wavelength light having the cutoff wavelength on the longer wavelength side than the shortest wavelength of the light-emitting spectrum of the LED element, and the light emitted from the LED element is transmitted through the filter to be irradiated to the sealant. Floor. In the light irradiation device of the present invention, it is preferable that the cutoff wavelength of the filter is longer than the long wavelength side of the sensitivity wavelength range of the photopolymerizable component. Further, it is preferable that the plurality of light source segments in which the plurality of LED elements are disposed on the same substrate are arranged in a manner of being arranged along the surface direction of the substrate. Further, an LED package in which the LED element is housed may be provided, and the filter may be provided in the LED package. According to the light-emitting device of the present invention, light from the LED element having a narrow wavelength range of the light-emitting spectrum is transmitted through a shorter wavelength side than the luminescence peak wavelength of the LED element, and is larger than the LED element. The shortest wavelength of the luminescence spectrum is irradiated by a filter having a cutoff wavelength on the longer wavelength side, and thus the wavelength distribution of the irradiated light is extremely narrow. Therefore, the LED element is selected in accordance with the sensitivity wavelength range of the photocurable sealant constituting the sealant layer and the sensitivity wavelength range of the photopolymerizable component in the photopolymerizable material 14 -8 - 201113477 layer, thereby eliminating the need to light The photopolymerizable component in the polymerizable material layer undergoes a polymerization reaction, which means that the sealant layer can be cured by irradiating light with high light use efficiency. In addition, the 'LED component is extremely short from the start of lighting until it reaches the steady lighting state', so that it can be instantaneously lit, so there is no need to continuously illuminate and set the shutter mechanism, so high energy efficiency can be obtained. And can get higher reliability. In addition, in the filter, the sealant layer is irradiated by using a configuration in which the cutoff wavelength is longer than the long-wavelength side of the sensitivity wavelength range of the photopolymerizable component in the photopolymerizable material layer. In the case of light, it is possible to surely prevent the photopolymerizable component in the photopolymerizable material layer from undergoing a polymerization reaction. The plurality of light source segments which are arranged on the same substrate by a plurality of LED elements are arranged so as to be arranged along the surface direction of the substrate, and the light source segments to be lit are selected according to the form of the sealant layer. Thereby, the sealant layer can be selectively irradiated with light, so that higher energy efficiency can be obtained, and it is not necessary to provide a mask for selectively irradiating the sealant layer with light, so that the manufacturing cost can be reduced. Further, when one of the light source segments is deteriorated, by increasing the irradiation intensity of the other LED elements, it is possible to illuminate light of a stable amount of light in the entire light source section. Further, since the LED package having the LED element is provided with a filter in the LED package, since it is not necessary to provide a large-area filter, the filter cost can be reduced and the productivity can be improved. . -9 - 201113477 [Embodiment] Hereinafter, embodiments of the present invention will be described. Fig. 1 is an explanatory view showing a schematic configuration of an example of a bonding apparatus including a display panel of the light irradiation device of the present invention. In the bonding apparatus of the display panel (hereinafter simply referred to as "bonding apparatus"), the stage 10 is provided with a stage 10 on which the object to be processed is placed via the support table 12, and the stage is placed on the stage Above the 10, the light irradiation device 15 of the present invention is disposed. The object to be processed 1 of the bonding apparatus is formed by forming a photopolymerizable material layer 2 between the two light-transmitting substrates 4 and a sealant layer 3 surrounded by the periphery of the photopolymerizable material layer 2 . By. In the object to be processed 1 of the present invention, a total of four display panels are produced, and in the object to be processed 1, as shown in FIG. 2, four photopolymerizable material layers 2 which are vertically and horizontally arranged are formed. And four sealant layers 3 respectively surrounding one photopolymerizable material layer 2. The photopolymerizable material layer 2 is composed of a photopolymerizable component having a sensitivity wavelength range within a certain range and a liquid crystal material containing a liquid crystal component. The photopolymerizable component in the photopolymerizable material layer 2 contains a monomer 'and a photopolymerization initiator which generates an active species such as a radical or a cation by receiving ultraviolet rays. The sensitivity wavelength range of the photopolymerizable component is determined by selecting the kind of photopolymerization initiator. Further, the sealant layer 3 is composed of a photocurable sealant containing a curable resin and photopolymerization of an active species such as a radical or a cation by receiving ultraviolet rays. Starting from the initiator. The photocurable sealant is one in which the long-wavelength side end of the sensitivity wavelength range is located on the longer wavelength side than the long-wavelength side end of the sensitivity wavelength range of the photopolymerizable component in the photopolymerizable material layer 2. The sensitivity wavelength range of the photocurable sealant is determined by selecting the kind of photopolymerization initiator. Further, the light-transmitting substrate 4 is made of glass or the like. The object to be processed 1 as described above is formed by applying a photocurable sealant to the surface of one of the light-transmitting substrates 4, and forming four sealant layers 3 in a frame shape, respectively, in the surface of the one light-transmitting substrate 4. A liquid crystal material containing a photopolymerizable component and a liquid crystal component is applied to each of the regions surrounded by the sealant layer 3, and after the four photopolymerizable material layers 2 are formed, the light transmissive substrate 4 is bonded to each other. The other light-transmitting substrate is laminated in a state of being separated at predetermined intervals. As shown in Fig. 3, the light irradiation device 15 of the illustrated example is configured such that a plurality of light source segments 20 are arranged vertically and horizontally on an appropriate support (not shown). As shown in FIG. 4, each of the light source segments 20 is provided with a plurality of LED elements 25 on the surface of the same rectangular substrate 21, and filters 30 are provided on the respective surfaces of the LED elements 25 so as to cover the LED elements 25. Further, a rectangular cylindrical light guiding member 26 having an inner surface as a light reflecting surface is disposed on a peripheral portion of the surface of the substrate 21, and heat dissipation for dissipating heat generated by the LED element 25 is provided on the back surface of the substrate 21 Heat sink 27. As the LED element 25, a gallium nitride (GaN)-based LED containing indium (In) or aluminum (A1 -11 - 201113477) can be used. The emission spectrum of the LED element 25 is selected in accordance with the sensitivity wavelength range of the photopolymerizable component constituting the photopolymerizable material layer and the sensitivity wavelength range of the photocurable sealant constituting the sealant layer, by adjusting the In in the LED. The composition ratio of AlGa and N is such that the peak wavelength is, for example, 200 nm to the infrared region of the LED element 25, and specifically, the peak wavelength is selected from 360 to 420 nm. Further, the half width of the peak 値 wavelength in the light-emitting spectrum of the LED element 25 is, for example, 1 〇 to 3 0 n m. Further, the number of the LED elements 25 in each of the light source segments 20 is, for example, 5 to 16 pieces. The filter 30 is a low-pass filter that shields light on the short-wavelength side, and its cutoff wavelength (wavelength of light transmittance of 5 〇%) is located on the shorter wavelength side than the luminescence peak LED wavelength of the LED element 25, and is located at a ratio The shortest wavelength of the light-emitting spectrum of the LED element 25 is the longer wavelength side. In the case of the filter 30, a dielectric multilayer film can be used. Further, the filter 30 is preferably located at a longer wavelength side than the long-wavelength side end of the sensitivity wavelength range of the photopolymerizable component in the photopolymerizable material layer 2, whereby the pair of sealant layers 3 When the light is irradiated, the polymerization reaction of the photopolymerizable component in the photopolymerizable material layer 2 can be surely prevented. In the light irradiation device 15 described above, among the light source segments 20, the light source segment 20 selected in accordance with the shape of the sealant layer 3 in the processing object 1 is operated, whereby the light source segment 20 is derived from the LED element 25. The light is transmitted through the light-emitting portion 28 of the light guiding member 26 through the filter 30, and is irradiated onto the sealing agent in the processing object 1-12-201113477 disposed on the stage 10 of the bonding apparatus. Layer 3, whereby the sealant layer 3 is hardened. As described above, the LED element 25 has a light-emitting spectrum as shown by a curve (L) as shown in the fifth diagram, but the filter 30 has a spectral characteristic as shown by the line (F), that is, has a ratio. The light-emitting peak wavelength of the LED element is a shorter wavelength side, and the shortest wavelength of the optical spectrum of the LED element 25 is a low-pass filter of the cut-off wavelength on the longer wavelength side, and thus the light emitted by the LED element 25 is compared. The wavelength of the filter 30 whose wavelength is shorter than the wavelength side (the oblique line portion in Fig. 5) is blocked by the filter 30. By the light irradiation device 15 as described above, the light from the LED element 25 having a narrow range of the light-emitting spectrum is transmitted through the light-emitting peak wavelength of the LED element 25, and is shorter than the wavelength side. Since the shortest wavelength of the light-emitting spectrum of the LED element 25 is the filter 30 having the cut-off wavelength on the longer wavelength side, the wavelength distribution of the light to be irradiated is extremely narrow. The sensitivity wavelength range of the sealant layer 3 is higher on the short wavelength side, but the light source of the display panel bonding apparatus does not emit light in the sensitivity wavelength range of the photopolymerizable component in the photopolymerizable material layer 2. Therefore, the illuminating peak 値 wave of the light from the LED element is shielded by the filter to be light of a shorter wavelength side, whereby the sensible wavelength range of the photopolymerizable component in the photopolymerizable material 2 can be more strongly irradiated. The outer wavelength region and the short-wavelength region of the photocurable sealant constituting the sealant layer 3 having high sensitivity. By this means, when the photopolymerizable component in the photopolymerizable material layer 2 is not subjected to polymerization reaction, the sealant layer 3 is irradiated with light with high light use efficiency to be cured. The device with the 25-wave interceptor is a sex»long layer and the pair is -13- 201113477. In addition, the time of the LED component 25 is very short from the start of the lighting to the steady lighting state. It is instantly lit, so there is no need to continuously illuminate and set the shutter mechanism, so higher energy efficiency and higher reliability are obtained. The plurality of light source segments 20' having the plurality of LED elements 25 disposed on the same substrate 21 are arranged in such a manner as to be aligned along the surface direction of the substrate 21, thereby sealing the light source segments 20 of the illuminated lamps. The form of the agent layer 3 is selected, whereby the sealant layer 3 can be selectively irradiated with light, so that higher energy efficiency can be obtained, and it is not necessary to provide a cover for selectively irradiating light to the sealant layer 3. The cover can thus achieve a low reduction in manufacturing costs. Further, when one of the light source segments 20 is deteriorated, by increasing the irradiation intensity of the other LED elements 25, it is possible to illuminate light of a stable amount of light in the entire light source segment 20. Fig. 6 is an explanatory view showing the configuration of a light source segment in another example of the light irradiation device of the present invention. In the light source segment 20, a plurality of LED packages 35 are disposed on the surface of the same rectangular substrate 21, and a rectangular cylindrical light guiding member 26' having an inner surface as a light reflecting surface is disposed on a peripheral portion of the surface of the substrate 21. A heat dissipation fin 27 for dissipating heat generated by the LED package 35 is provided on the back surface of the substrate 21. Each of the LED packages 35 as shown in FIG. 7 has a package substrate 36' having a rectangular recess 37 formed in the center thereof. In the recess 37 of the package substrate 36, an LED element 25' is disposed to block the LED package 25'. The package body 14 - 201113477 is provided with a plate filter 3 in the manner of the recess 37 of the plate 36. Further, 28 is a light emitting portion of the light guiding member 26. The characteristics of the LED element 25 and the wave device 30 are the same as those of the light source segment 20 shown in Fig. 4. With the light irradiation device as described above, the same effect as the light irradiation device shown in FIGS. 3 and 4 is obtained, and the LED package 35 in which the LED element 25 is housed is provided, and the LED package 35 is provided in the LED package 35. Since the filter 30 is provided, it is not necessary to provide the filter 30 of a large area, and as a result, the filter cost reduction and productivity improvement can be achieved. The light irradiation device of the present invention is not limited to the above embodiment, and various modifications can be added. (1) In the light source segment 20 shown in Fig. 4, the filter 3, as shown in Fig. 8, may also be a hemispherical shape having a lens function. Further, instead of providing the filter 30' for each of the LED elements 25, as shown in Fig. 9, a filter 30 may be provided at a central position in the cylindrical hole of the light guiding member 26. Further, as shown in Fig. 9, the integrator lens 29 may be disposed at the distal end side position in the cylindrical hole of the light guiding member 26. (2) The filter 30 provided in the LED package 35 in the light source segment 2A shown in Fig. 6 may be a hemispherical shape having a lens function as shown in Fig. 10(a). Further, in the LED package 35, as shown in Fig. 1(b), a lens 31 may be provided on the surface of the plate filter 30. [Examples] -15- 5 201113477 <Example 1 > According to the configuration shown in Figs. 3 and 4, a light irradiation device in which 130 light source segments were arranged in a vertical and horizontal direction was prepared. The specifications of the light source segment are as follows. The substrate (21) has an aspect ratio of 50 mm x 50 mm, and the entire length of the light guiding member (26) is 45 mm. The LED element (25) has an emission spectrum with a peak wavelength of 385 nm and a half bandwidth of ±5 nm. There are nine light source segments. The filter (30) is a low-pass filter having a dielectric multilayer film having a cutoff wavelength of 380 nm. The luminescence spectrum of the light source segment in the light irradiation device is shown in Fig. 1 (a). <Comparative Example 1> When the LED element (25) was used, the peak wavelength of the emission spectrum was 405 nm and the half bandwidth was ±8 nm, and Example 1 was produced except that the chopper (30) was not provided. A light irradiation device of the same configuration. The luminescence spectrum of the light source segment in the light irradiation device is shown in Fig. (b). <<Cleaning Test of Sealant>> Using the light irradiation devices of Example 1 and Comparative Example 1, the curing test of the sealant was carried out as follows. Two kinds of hard-light-16-S) 201113477 chemical sealants (referred to as "sealant A" and "sealant B") having the sensitivity curve represented by Fig. 2, respectively, are used. A sealant layer having a thickness of several μm is formed between the optical substrates. In the sealant layer, light was irradiated by a light irradiation device under the condition that the intensity on the irradiation surface was 155 mW/cm 2 , and the integrated irradiation light amount was measured to be 500 m J/cm 2 , 75 0 m J/cm 2 , 1 000 m J . Hardening rate of the sealant layer at /cm2 and 2000 mJ/cm2. As described above, the curing rate of the sealant layer is measured by the FT-IR (Fourier Transform Infrared Absorption Spectroscopy) method by analyzing the infrared absorption spectrum which is changed by the change in the chemical structure which is changed by the hardening reaction. Specifically, the amount of chemical bonding consumed by polymerization is quantified based on the area or height of the infrared absorption peak ’ and the hardening rate is calculated based on the enthalpy. Further, in practical use, if the hardening rate is 80% or more, it is judged that the sealant layer has been cured. The above results are shown in Table 1. [Table 1] Hardening rate (%) of the sealant layer Total amount of irradiation light 500 m J/cm 2 750 mJ/cm 2 1000 mJ/cm 2 2000 mJ/cm 2 Example 1 Sealant A 80.9 82.2 82.7 82.3 Sealant B 81.5 81.5 81.5 82.3 Comparative Example 1 Seal Agent A 73 76.7 78.6 80.9 Sealant B 76.5 79.8 80.1 82.1 It can be clearly confirmed from the results of Table 1 that, in the light irradiation device of Example 1, for any of the sealant A and the sealant B, -17- 201113477 When the amount is 500 mJ/cm2 or more, the light can be hardened. On the other hand, in the light irradiation device of Comparative Example 1, in order to cure the sealant layer, it is necessary to calculate the amount of irradiation light to the sealant A to be 2000 mJ/cm 2 or more, and to calculate the amount of irradiation light to the sealant B to be 1 000 mJ/cm 2 . The above conditions are used to illuminate the light. Fig. 13 is a synthetic graph in which the light-emitting spectrum of the light-irradiating device and the sensitivity curve of the photo-curable sealant are stacked, (A1) is the light-emitting spectrum of the light-irradiating device of the first embodiment and the sensitivity curve of the sealant A The combined synthetic curve (A 2 ) is a synthetic curve in which the light-emitting spectrum of the light-irradiating device of Comparative Example 1 and the sensitivity curve of the sealant A are overlapped. In these synthetic curves, the respective integral enthalpy can be regarded as the reaction amount of the photocurable sealant of the average unit irradiation time, and the integral 値 of the synthetic curve of the integral enthalpy (A 2 ) of the synthetic curve of (A 1 ) .6 times. As described above, it is understood that the light irradiation device of the first embodiment can obtain a higher light use efficiency than the light irradiation device of Comparative Example 1. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is an explanatory view showing a schematic configuration of an example of a bonding apparatus including a display panel of a light-emitting device of the present invention. Fig. 2 is a plan view showing the object of the bonding apparatus of the display panel shown in Fig. 1. Fig. 3 is a plan view showing the configuration of an example of the light irradiation device of the present invention. Fig. 4 is a view showing a light source segment in the light irradiation device shown in Fig. 3.
-18- SJ 201113477 的構成的說明圖。 第5圖係以模式顯示LED元件的發光頻譜與濾波器 之分光特性之關係的曲線圖。 第6圖係顯示本發明之光照射裝置之其他例中之光源 片段的構成的說明圖。 第7圖係顯示第6圖所示之光源片段中的LED封裝 體的構成的說明圖。 第8圖係顯示光源片段之變形例之主要部位之構成的 說明圖。 第9圖係顯示光源片段之其他變形例之構成的說明圖 〇 第1 〇圖係顯示LED封裝體之變形例之構成的說明圖 〇 第11圖係顯示實施例1及比較例1之光照射裝置中 之光源片段的發光頻譜圖。 第12圖係顯示具代表性的光硬化型密封劑的感度曲 線圖。 第13圖係將實施例中的光照射裝置的發光頻譜與光 硬化型密封劑的感度曲線相疊後的合成曲線圖。 【主要元件符號說明】 1 :處理對象物 2 ‘·光聚合性材料層 3 :密封劑層 -19- 201113477 4 :透光性基板 1 〇 :載台 11: 基台 12 :支持台 1 5 :光照射裝置 2 0 :光源片段 21 :基板 2 5: L E D元件 26 :導光構件 27:散熱用散熱片 2 8 :光出射部 29 :積分器透鏡 3 0 :濾波器 3 1 :透鏡 35 : LED封裝體 3 6 :封裝體基板 37 :凹處 -20-18- An illustration of the composition of SJ 201113477. Fig. 5 is a graph showing the relationship between the light emission spectrum of the LED element and the spectral characteristics of the filter in a mode. Fig. 6 is an explanatory view showing the configuration of a light source segment in another example of the light irradiation device of the present invention. Fig. 7 is an explanatory view showing the configuration of an LED package in the light source section shown in Fig. 6. Fig. 8 is an explanatory view showing the configuration of a main part of a modification of the light source segment. Fig. 9 is an explanatory view showing a configuration of another modification of the light source segment. Fig. 1 is an explanatory view showing a configuration of a modification of the LED package. Fig. 11 is a view showing light irradiation of the embodiment 1 and the comparative example 1. A luminescence spectrum of a source segment in the device. Fig. 12 is a graph showing the sensitivity of a representative photocurable sealant. Fig. 13 is a composite graph in which the light-emitting spectrum of the light-irradiating device of the embodiment is superimposed with the sensitivity curve of the photo-curable sealant. [Description of main component symbols] 1 : Object to be processed 2 '· Photopolymerizable material layer 3 : Sealant layer -19- 201113477 4 : Translucent substrate 1 〇: Stage 11 : Abutment 12 : Support table 1 5 : Light irradiation device 20: Light source segment 21: Substrate 2 5: LED element 26: Light guiding member 27: Heat sink fin 2 8: Light exit portion 29: Integrator lens 3 0: Filter 3 1 : Lens 35: LED Package 3 6 : Package substrate 37 : recess -20