TW201110803A - Electroluminescent devices with color adjustment based on current crowding - Google Patents

Electroluminescent devices with color adjustment based on current crowding Download PDF

Info

Publication number
TW201110803A
TW201110803A TW099121300A TW99121300A TW201110803A TW 201110803 A TW201110803 A TW 201110803A TW 099121300 A TW099121300 A TW 099121300A TW 99121300 A TW99121300 A TW 99121300A TW 201110803 A TW201110803 A TW 201110803A
Authority
TW
Taiwan
Prior art keywords
light
spectrum
emitted
output
modifying material
Prior art date
Application number
TW099121300A
Other languages
English (en)
Chinese (zh)
Inventor
Michael Albert Haase
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of TW201110803A publication Critical patent/TW201110803A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials

Landscapes

  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)
TW099121300A 2009-06-30 2010-06-29 Electroluminescent devices with color adjustment based on current crowding TW201110803A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US22166409P 2009-06-30 2009-06-30

Publications (1)

Publication Number Publication Date
TW201110803A true TW201110803A (en) 2011-03-16

Family

ID=42713858

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099121300A TW201110803A (en) 2009-06-30 2010-06-29 Electroluminescent devices with color adjustment based on current crowding

Country Status (7)

Country Link
US (1) US8304976B2 (cg-RX-API-DMAC7.html)
EP (1) EP2449608A1 (cg-RX-API-DMAC7.html)
JP (1) JP5728007B2 (cg-RX-API-DMAC7.html)
KR (1) KR20120055540A (cg-RX-API-DMAC7.html)
CN (1) CN102473816B (cg-RX-API-DMAC7.html)
TW (1) TW201110803A (cg-RX-API-DMAC7.html)
WO (1) WO2011008474A1 (cg-RX-API-DMAC7.html)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9293622B2 (en) 2009-05-05 2016-03-22 3M Innovative Properties Company Re-emitting semiconductor carrier devices for use with LEDs and methods of manufacture
US8461568B2 (en) 2009-05-05 2013-06-11 3M Innovative Properties Company Re-emitting semiconductor construction with enhanced extraction efficiency
JP2012526391A (ja) 2009-05-05 2012-10-25 スリーエム イノベイティブ プロパティズ カンパニー インジウム空乏機構を利用してインジウム含有基板上で成長した半導体素子
CN102474932B (zh) 2009-06-30 2015-12-16 3M创新有限公司 具有可调节色温的白光电致发光器件
JP2012532454A (ja) 2009-06-30 2012-12-13 スリーエム イノベイティブ プロパティズ カンパニー カドミウム非含有の再発光半導体構成体
CN104662680B (zh) 2012-09-13 2017-07-14 3M创新有限公司 具有宽颜色范围的高效照明系统
TWI624821B (zh) * 2017-09-07 2018-05-21 錼創科技股份有限公司 微型發光二極體顯示面板及其驅動方法

Family Cites Families (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3526801A (en) 1964-08-07 1970-09-01 Honeywell Inc Radiation sensitive semiconductor device
JPH077847B2 (ja) 1984-12-17 1995-01-30 株式会社東芝 半導体発光素子
US5048035A (en) 1989-05-31 1991-09-10 Kabushiki Kaisha Toshiba Semiconductor light emitting device
JP2871477B2 (ja) 1994-09-22 1999-03-17 信越半導体株式会社 半導体発光装置およびその製造方法
EP0759264A1 (en) 1995-03-10 1997-02-26 Koninklijke Philips Electronics N.V. Lighting system for controlling the colour temperature of artificial light under the influence of the daylight level
AU744162B2 (en) 1997-02-19 2002-02-14 Kirin Beer Kabushiki Kaisha Method and apparatus for producing plastic container having carbon film coating
US7014336B1 (en) 1999-11-18 2006-03-21 Color Kinetics Incorporated Systems and methods for generating and modulating illumination conditions
US6016038A (en) 1997-08-26 2000-01-18 Color Kinetics, Inc. Multicolored LED lighting method and apparatus
JP3358556B2 (ja) 1998-09-09 2002-12-24 日本電気株式会社 半導体装置及びその製造方法
AU5463700A (en) 1999-06-04 2000-12-28 Trustees Of Boston University Photon recycling semiconductor multi-wavelength light-emitting diodes
FR2801814B1 (fr) 1999-12-06 2002-04-19 Cebal Procede de depot d'un revetement sur la surface interne des boitiers distributeurs aerosols
US6902987B1 (en) 2000-02-16 2005-06-07 Ziptronix, Inc. Method for low temperature bonding and bonded structure
TW497277B (en) 2000-03-10 2002-08-01 Toshiba Corp Semiconductor light emitting device and method for manufacturing the same
US7202613B2 (en) 2001-05-30 2007-04-10 Color Kinetics Incorporated Controlled lighting methods and apparatus
US6636003B2 (en) 2000-09-06 2003-10-21 Spectrum Kinetics Apparatus and method for adjusting the color temperature of white semiconduct or light emitters
IL138471A0 (en) 2000-09-14 2001-10-31 Yissum Res Dev Co Novel semiconductor materials and their uses
US7078319B2 (en) 2000-11-17 2006-07-18 Gelcore Llc Laser separated die with tapered sidewalls for improved light extraction
US7358679B2 (en) 2002-05-09 2008-04-15 Philips Solid-State Lighting Solutions, Inc. Dimmable LED-based MR16 lighting apparatus and methods
CA2427559A1 (en) 2002-05-15 2003-11-15 Sumitomo Electric Industries, Ltd. White color light emitting device
ATE468147T1 (de) 2003-01-16 2010-06-15 Femmepharma Holding Co Inc Vaginaler oder rektaler applikator und verfahren
NO20041523L (no) 2003-09-19 2005-03-21 Sumitomo Electric Industries Lysemitterende halvlederelement
DE10354936B4 (de) 2003-09-30 2012-02-16 Osram Opto Semiconductors Gmbh Strahlungemittierendes Halbleiterbauelement
US7026653B2 (en) 2004-01-27 2006-04-11 Lumileds Lighting, U.S., Llc Semiconductor light emitting devices including current spreading layers
TWI229465B (en) 2004-03-02 2005-03-11 Genesis Photonics Inc Single chip white light component
TWI243489B (en) 2004-04-14 2005-11-11 Genesis Photonics Inc Single chip light emitting diode with red, blue and green three wavelength light emitting spectra
US7361938B2 (en) 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
US7553683B2 (en) 2004-06-09 2009-06-30 Philips Lumiled Lighting Co., Llc Method of forming pre-fabricated wavelength converting elements for semiconductor light emitting devices
US7119377B2 (en) 2004-06-18 2006-10-10 3M Innovative Properties Company II-VI/III-V layered construction on InP substrate
US7126160B2 (en) 2004-06-18 2006-10-24 3M Innovative Properties Company II-VI/III-V layered construction on InP substrate
US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
US7223998B2 (en) 2004-09-10 2007-05-29 The Regents Of The University Of California White, single or multi-color light emitting diodes by recycling guided modes
AU2005322570A1 (en) 2004-10-08 2006-07-06 The Regents Of The University Of California High efficiency light-emitting diodes
US7402831B2 (en) 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
TWI245440B (en) * 2004-12-30 2005-12-11 Ind Tech Res Inst Light emitting diode
US7804100B2 (en) 2005-03-14 2010-09-28 Philips Lumileds Lighting Company, Llc Polarization-reversed III-nitride light emitting device
US7417260B2 (en) 2005-06-28 2008-08-26 Dong-Sing Wuu Multiple-chromatic light emitting device
JP4971672B2 (ja) * 2005-09-09 2012-07-11 パナソニック株式会社 発光装置
BRPI0616227A2 (pt) * 2005-09-19 2011-06-14 Koninkl Philips Electronics Nv dispositivo emissor de luz de cor variÁvel, sistema de iluminaÇço de cor variÁvel, rede de sistema de iluminaÇço de cor variÁvel, conjunto de dispositivo emissor de luz de cor variÁvel, controlador para um sistema de iluminaÇço de cor variÁvel , e , mÉtodo para controlar um dispositivo emissor de luz de cor variÁvel
US7285791B2 (en) 2006-03-24 2007-10-23 Goldeneye, Inc. Wavelength conversion chip for use in solid-state lighting and method for making same
KR100875443B1 (ko) 2006-03-31 2008-12-23 서울반도체 주식회사 발광 장치
US20070284565A1 (en) 2006-06-12 2007-12-13 3M Innovative Properties Company Led device with re-emitting semiconductor construction and optical element
US7902542B2 (en) 2006-06-14 2011-03-08 3M Innovative Properties Company Adapted LED device with re-emitting semiconductor construction
US20080121911A1 (en) * 2006-11-28 2008-05-29 Cree, Inc. Optical preforms for solid state light emitting dice, and methods and systems for fabricating and assembling same
JP2008159708A (ja) * 2006-12-21 2008-07-10 Matsushita Electric Works Ltd 発光装置
KR100829925B1 (ko) 2007-03-02 2008-05-16 세메스 주식회사 기판을 처리하는 장치 및 방법
JP2010525555A (ja) 2007-03-08 2010-07-22 スリーエム イノベイティブ プロパティズ カンパニー 発光素子のアレイ
US7288902B1 (en) 2007-03-12 2007-10-30 Cirrus Logic, Inc. Color variations in a dimmable lighting device with stable color temperature light sources
US7687816B2 (en) * 2007-03-20 2010-03-30 International Business Machines Corporation Light emitting diode
US7759854B2 (en) 2007-05-30 2010-07-20 Global Oled Technology Llc Lamp with adjustable color
US10505083B2 (en) * 2007-07-11 2019-12-10 Cree, Inc. Coating method utilizing phosphor containment structure and devices fabricated using same
WO2009036579A1 (en) 2007-09-21 2009-03-26 Hoffmann Neopac Ag Apparatus for plasma supported coating of the inner surface of tube-like packaging containers made of plastics with the assistance of a non-thermal reactive ambient pressure beam plasma
WO2009048704A2 (en) * 2007-10-08 2009-04-16 3M Innovative Properties Company Light emitting diode with bonded semiconductor wavelength converter
US20090108269A1 (en) * 2007-10-26 2009-04-30 Led Lighting Fixtures, Inc. Illumination device having one or more lumiphors, and methods of fabricating same
KR20110019390A (ko) 2008-06-05 2011-02-25 쓰리엠 이노베이티브 프로퍼티즈 컴파니 접합형 반도체 파장 변환기를 갖는 발광 다이오드
KR20110030630A (ko) 2008-06-26 2011-03-23 쓰리엠 이노베이티브 프로퍼티즈 컴파니 반도체 광 변환 구조물
CN102124583B (zh) 2008-06-26 2013-06-19 3M创新有限公司 半导体光转换构造
KR20110058797A (ko) 2008-08-14 2011-06-01 쓰리엠 이노베이티브 프로퍼티즈 컴파니 이미징 광원 모듈을 갖는 프로젝션 시스템
WO2010027648A1 (en) 2008-09-04 2010-03-11 3M Innovative Properties Company I i-vi mqw vcsel on a heat sink optically pumped by a gan ld
EP2332185A2 (en) 2008-09-08 2011-06-15 3M Innovative Properties Company Electrically pixelated luminescent device
US8619620B2 (en) 2008-09-16 2013-12-31 Qualcomm Incorporated Methods and systems for transmission mode selection in a multi channel communication system
US8350462B2 (en) 2008-12-24 2013-01-08 3M Innovative Properties Company Light generating device having double-sided wavelength converter
JP2012526391A (ja) 2009-05-05 2012-10-25 スリーエム イノベイティブ プロパティズ カンパニー インジウム空乏機構を利用してインジウム含有基板上で成長した半導体素子
US8461568B2 (en) 2009-05-05 2013-06-11 3M Innovative Properties Company Re-emitting semiconductor construction with enhanced extraction efficiency
CN102474932B (zh) 2009-06-30 2015-12-16 3M创新有限公司 具有可调节色温的白光电致发光器件
JP2012532454A (ja) 2009-06-30 2012-12-13 スリーエム イノベイティブ プロパティズ カンパニー カドミウム非含有の再発光半導体構成体

Also Published As

Publication number Publication date
US8304976B2 (en) 2012-11-06
US20120091882A1 (en) 2012-04-19
CN102473816A (zh) 2012-05-23
CN102473816B (zh) 2015-03-11
EP2449608A1 (en) 2012-05-09
JP2012532452A (ja) 2012-12-13
JP5728007B2 (ja) 2015-06-03
WO2011008474A1 (en) 2011-01-20
KR20120055540A (ko) 2012-05-31

Similar Documents

Publication Publication Date Title
US8629611B2 (en) White light electroluminescent devices with adjustable color temperature
US8513686B2 (en) High output small area group III nitride LEDs
CN100530713C (zh) 高输出小面积第ⅲ族氮化物led
TW201110803A (en) Electroluminescent devices with color adjustment based on current crowding
KR20090015966A (ko) 재발광 반도체 구성을 갖는 개조된 ｌｅｄ 소자
TWI597862B (zh) 具阻障層的光電半導體元件
JP2008514031A (ja) 高出力ｉｉｉ族発光ダイオード
US20160072024A1 (en) Lighting apparatus
US20130075775A1 (en) Multicolored Light Converting LED With Minimal Absorption
KR20150092674A (ko) 발광 소자 및 발광 소자 패키지
KR20180016906A (ko) 반도체 소자 및 이를 갖는 발광소자 패키지
TWI613838B (zh) 發光元件
KR101723540B1 (ko) 발광 소자 및 이를 갖는 발광 소자 패키지
KR102358690B1 (ko) 반도체 소자 및 이를 포함하는 반도체 소자 패키지 및 광원 장치
CN207134375U (zh) 一种led芯片
TW201739067A (zh) 具阻障層的光電半導體元件
TW202021155A (zh) 具有光散射調諧之發光器件以控制色彩偏移
CN104425664A (zh) 具阻障层的光电半导体元件
KR20180009266A (ko) 반도체 소자 및 이를 갖는 발광소자 패키지
KR20180057144A (ko) 반도체 소자 및 이를 포함하는 반도체 패키지
Marioli Study of the reliability of power LEDs for color mixing applications
US20140014987A1 (en) Methods and apparatuses for shifting chromaticity of light
Compagnin Thermal characterization and optical reliability investigation of high-power white leds
KR20190015036A (ko) 반도체 소자 및 이를 포함하는 반도체 소자 패키지