JP5728007B2 - 電流集中に基づく色調整を伴うエレクトロルミネセント素子 - Google Patents

電流集中に基づく色調整を伴うエレクトロルミネセント素子 Download PDF

Info

Publication number
JP5728007B2
JP5728007B2 JP2012517773A JP2012517773A JP5728007B2 JP 5728007 B2 JP5728007 B2 JP 5728007B2 JP 2012517773 A JP2012517773 A JP 2012517773A JP 2012517773 A JP2012517773 A JP 2012517773A JP 5728007 B2 JP5728007 B2 JP 5728007B2
Authority
JP
Japan
Prior art keywords
light
emitted
spectrum
electrical signal
color
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2012517773A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012532452A5 (cg-RX-API-DMAC7.html
JP2012532452A (ja
Inventor
ミッシェル エー， ハッセ，
ミッシェル エー， ハッセ，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of JP2012532452A publication Critical patent/JP2012532452A/ja
Publication of JP2012532452A5 publication Critical patent/JP2012532452A5/ja
Application granted granted Critical
Publication of JP5728007B2 publication Critical patent/JP5728007B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials

Landscapes

  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)
JP2012517773A 2009-06-30 2010-06-25 電流集中に基づく色調整を伴うエレクトロルミネセント素子 Expired - Fee Related JP5728007B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22166409P 2009-06-30 2009-06-30
US61/221,664 2009-06-30
PCT/US2010/040009 WO2011008474A1 (en) 2009-06-30 2010-06-25 Electroluminescent devices with color adjustment based on current crowding

Publications (3)

Publication Number Publication Date
JP2012532452A JP2012532452A (ja) 2012-12-13
JP2012532452A5 JP2012532452A5 (cg-RX-API-DMAC7.html) 2013-08-15
JP5728007B2 true JP5728007B2 (ja) 2015-06-03

Family

ID=42713858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012517773A Expired - Fee Related JP5728007B2 (ja) 2009-06-30 2010-06-25 電流集中に基づく色調整を伴うエレクトロルミネセント素子

Country Status (7)

Country Link
US (1) US8304976B2 (cg-RX-API-DMAC7.html)
EP (1) EP2449608A1 (cg-RX-API-DMAC7.html)
JP (1) JP5728007B2 (cg-RX-API-DMAC7.html)
KR (1) KR20120055540A (cg-RX-API-DMAC7.html)
CN (1) CN102473816B (cg-RX-API-DMAC7.html)
TW (1) TW201110803A (cg-RX-API-DMAC7.html)
WO (1) WO2011008474A1 (cg-RX-API-DMAC7.html)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9293622B2 (en) 2009-05-05 2016-03-22 3M Innovative Properties Company Re-emitting semiconductor carrier devices for use with LEDs and methods of manufacture
US8461568B2 (en) 2009-05-05 2013-06-11 3M Innovative Properties Company Re-emitting semiconductor construction with enhanced extraction efficiency
JP2012526391A (ja) 2009-05-05 2012-10-25 スリーエム イノベイティブ プロパティズ カンパニー インジウム空乏機構を利用してインジウム含有基板上で成長した半導体素子
CN102474932B (zh) 2009-06-30 2015-12-16 3M创新有限公司 具有可调节色温的白光电致发光器件
JP2012532454A (ja) 2009-06-30 2012-12-13 スリーエム イノベイティブ プロパティズ カンパニー カドミウム非含有の再発光半導体構成体
CN104662680B (zh) 2012-09-13 2017-07-14 3M创新有限公司 具有宽颜色范围的高效照明系统
TWI624821B (zh) * 2017-09-07 2018-05-21 錼創科技股份有限公司 微型發光二極體顯示面板及其驅動方法

Family Cites Families (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3526801A (en) 1964-08-07 1970-09-01 Honeywell Inc Radiation sensitive semiconductor device
JPH077847B2 (ja) 1984-12-17 1995-01-30 株式会社東芝 半導体発光素子
US5048035A (en) 1989-05-31 1991-09-10 Kabushiki Kaisha Toshiba Semiconductor light emitting device
JP2871477B2 (ja) 1994-09-22 1999-03-17 信越半導体株式会社 半導体発光装置およびその製造方法
EP0759264A1 (en) 1995-03-10 1997-02-26 Koninklijke Philips Electronics N.V. Lighting system for controlling the colour temperature of artificial light under the influence of the daylight level
AU744162B2 (en) 1997-02-19 2002-02-14 Kirin Beer Kabushiki Kaisha Method and apparatus for producing plastic container having carbon film coating
US7014336B1 (en) 1999-11-18 2006-03-21 Color Kinetics Incorporated Systems and methods for generating and modulating illumination conditions
US6016038A (en) 1997-08-26 2000-01-18 Color Kinetics, Inc. Multicolored LED lighting method and apparatus
JP3358556B2 (ja) 1998-09-09 2002-12-24 日本電気株式会社 半導体装置及びその製造方法
AU5463700A (en) 1999-06-04 2000-12-28 Trustees Of Boston University Photon recycling semiconductor multi-wavelength light-emitting diodes
FR2801814B1 (fr) 1999-12-06 2002-04-19 Cebal Procede de depot d'un revetement sur la surface interne des boitiers distributeurs aerosols
US6902987B1 (en) 2000-02-16 2005-06-07 Ziptronix, Inc. Method for low temperature bonding and bonded structure
TW497277B (en) 2000-03-10 2002-08-01 Toshiba Corp Semiconductor light emitting device and method for manufacturing the same
US7202613B2 (en) 2001-05-30 2007-04-10 Color Kinetics Incorporated Controlled lighting methods and apparatus
US6636003B2 (en) 2000-09-06 2003-10-21 Spectrum Kinetics Apparatus and method for adjusting the color temperature of white semiconduct or light emitters
IL138471A0 (en) 2000-09-14 2001-10-31 Yissum Res Dev Co Novel semiconductor materials and their uses
US7078319B2 (en) 2000-11-17 2006-07-18 Gelcore Llc Laser separated die with tapered sidewalls for improved light extraction
US7358679B2 (en) 2002-05-09 2008-04-15 Philips Solid-State Lighting Solutions, Inc. Dimmable LED-based MR16 lighting apparatus and methods
CA2427559A1 (en) 2002-05-15 2003-11-15 Sumitomo Electric Industries, Ltd. White color light emitting device
ATE468147T1 (de) 2003-01-16 2010-06-15 Femmepharma Holding Co Inc Vaginaler oder rektaler applikator und verfahren
NO20041523L (no) 2003-09-19 2005-03-21 Sumitomo Electric Industries Lysemitterende halvlederelement
DE10354936B4 (de) 2003-09-30 2012-02-16 Osram Opto Semiconductors Gmbh Strahlungemittierendes Halbleiterbauelement
US7026653B2 (en) 2004-01-27 2006-04-11 Lumileds Lighting, U.S., Llc Semiconductor light emitting devices including current spreading layers
TWI229465B (en) 2004-03-02 2005-03-11 Genesis Photonics Inc Single chip white light component
TWI243489B (en) 2004-04-14 2005-11-11 Genesis Photonics Inc Single chip light emitting diode with red, blue and green three wavelength light emitting spectra
US7361938B2 (en) 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
US7553683B2 (en) 2004-06-09 2009-06-30 Philips Lumiled Lighting Co., Llc Method of forming pre-fabricated wavelength converting elements for semiconductor light emitting devices
US7119377B2 (en) 2004-06-18 2006-10-10 3M Innovative Properties Company II-VI/III-V layered construction on InP substrate
US7126160B2 (en) 2004-06-18 2006-10-24 3M Innovative Properties Company II-VI/III-V layered construction on InP substrate
US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
US7223998B2 (en) 2004-09-10 2007-05-29 The Regents Of The University Of California White, single or multi-color light emitting diodes by recycling guided modes
AU2005322570A1 (en) 2004-10-08 2006-07-06 The Regents Of The University Of California High efficiency light-emitting diodes
US7402831B2 (en) 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
TWI245440B (en) * 2004-12-30 2005-12-11 Ind Tech Res Inst Light emitting diode
US7804100B2 (en) 2005-03-14 2010-09-28 Philips Lumileds Lighting Company, Llc Polarization-reversed III-nitride light emitting device
US7417260B2 (en) 2005-06-28 2008-08-26 Dong-Sing Wuu Multiple-chromatic light emitting device
JP4971672B2 (ja) * 2005-09-09 2012-07-11 パナソニック株式会社 発光装置
BRPI0616227A2 (pt) * 2005-09-19 2011-06-14 Koninkl Philips Electronics Nv dispositivo emissor de luz de cor variÁvel, sistema de iluminaÇço de cor variÁvel, rede de sistema de iluminaÇço de cor variÁvel, conjunto de dispositivo emissor de luz de cor variÁvel, controlador para um sistema de iluminaÇço de cor variÁvel , e , mÉtodo para controlar um dispositivo emissor de luz de cor variÁvel
US7285791B2 (en) 2006-03-24 2007-10-23 Goldeneye, Inc. Wavelength conversion chip for use in solid-state lighting and method for making same
KR100875443B1 (ko) 2006-03-31 2008-12-23 서울반도체 주식회사 발광 장치
US20070284565A1 (en) 2006-06-12 2007-12-13 3M Innovative Properties Company Led device with re-emitting semiconductor construction and optical element
US7902542B2 (en) 2006-06-14 2011-03-08 3M Innovative Properties Company Adapted LED device with re-emitting semiconductor construction
US20080121911A1 (en) * 2006-11-28 2008-05-29 Cree, Inc. Optical preforms for solid state light emitting dice, and methods and systems for fabricating and assembling same
JP2008159708A (ja) * 2006-12-21 2008-07-10 Matsushita Electric Works Ltd 発光装置
KR100829925B1 (ko) 2007-03-02 2008-05-16 세메스 주식회사 기판을 처리하는 장치 및 방법
JP2010525555A (ja) 2007-03-08 2010-07-22 スリーエム イノベイティブ プロパティズ カンパニー 発光素子のアレイ
US7288902B1 (en) 2007-03-12 2007-10-30 Cirrus Logic, Inc. Color variations in a dimmable lighting device with stable color temperature light sources
US7687816B2 (en) * 2007-03-20 2010-03-30 International Business Machines Corporation Light emitting diode
US7759854B2 (en) 2007-05-30 2010-07-20 Global Oled Technology Llc Lamp with adjustable color
US10505083B2 (en) * 2007-07-11 2019-12-10 Cree, Inc. Coating method utilizing phosphor containment structure and devices fabricated using same
WO2009036579A1 (en) 2007-09-21 2009-03-26 Hoffmann Neopac Ag Apparatus for plasma supported coating of the inner surface of tube-like packaging containers made of plastics with the assistance of a non-thermal reactive ambient pressure beam plasma
WO2009048704A2 (en) * 2007-10-08 2009-04-16 3M Innovative Properties Company Light emitting diode with bonded semiconductor wavelength converter
US20090108269A1 (en) * 2007-10-26 2009-04-30 Led Lighting Fixtures, Inc. Illumination device having one or more lumiphors, and methods of fabricating same
KR20110019390A (ko) 2008-06-05 2011-02-25 쓰리엠 이노베이티브 프로퍼티즈 컴파니 접합형 반도체 파장 변환기를 갖는 발광 다이오드
KR20110030630A (ko) 2008-06-26 2011-03-23 쓰리엠 이노베이티브 프로퍼티즈 컴파니 반도체 광 변환 구조물
CN102124583B (zh) 2008-06-26 2013-06-19 3M创新有限公司 半导体光转换构造
KR20110058797A (ko) 2008-08-14 2011-06-01 쓰리엠 이노베이티브 프로퍼티즈 컴파니 이미징 광원 모듈을 갖는 프로젝션 시스템
WO2010027648A1 (en) 2008-09-04 2010-03-11 3M Innovative Properties Company I i-vi mqw vcsel on a heat sink optically pumped by a gan ld
EP2332185A2 (en) 2008-09-08 2011-06-15 3M Innovative Properties Company Electrically pixelated luminescent device
US8619620B2 (en) 2008-09-16 2013-12-31 Qualcomm Incorporated Methods and systems for transmission mode selection in a multi channel communication system
US8350462B2 (en) 2008-12-24 2013-01-08 3M Innovative Properties Company Light generating device having double-sided wavelength converter
JP2012526391A (ja) 2009-05-05 2012-10-25 スリーエム イノベイティブ プロパティズ カンパニー インジウム空乏機構を利用してインジウム含有基板上で成長した半導体素子
US8461568B2 (en) 2009-05-05 2013-06-11 3M Innovative Properties Company Re-emitting semiconductor construction with enhanced extraction efficiency
CN102474932B (zh) 2009-06-30 2015-12-16 3M创新有限公司 具有可调节色温的白光电致发光器件
JP2012532454A (ja) 2009-06-30 2012-12-13 スリーエム イノベイティブ プロパティズ カンパニー カドミウム非含有の再発光半導体構成体

Also Published As

Publication number Publication date
US8304976B2 (en) 2012-11-06
US20120091882A1 (en) 2012-04-19
CN102473816A (zh) 2012-05-23
TW201110803A (en) 2011-03-16
CN102473816B (zh) 2015-03-11
EP2449608A1 (en) 2012-05-09
JP2012532452A (ja) 2012-12-13
WO2011008474A1 (en) 2011-01-20
KR20120055540A (ko) 2012-05-31

Similar Documents

Publication Publication Date Title
US8629611B2 (en) White light electroluminescent devices with adjustable color temperature
KR102212561B1 (ko) 반도체 발광 소자 및 반도체 발광 소자 패키지
US8178888B2 (en) Semiconductor light emitting devices with high color rendering
KR100347126B1 (ko) 백색ｌｅｄ 및 중간색ｌｅｄ
JP5728007B2 (ja) 電流集中に基づく色調整を伴うエレクトロルミネセント素子
TWI458910B (zh) 具改良色彩品質之固態照明系統
US10074781B2 (en) Semiconductor light emitting devices including multiple red phosphors that exhibit good color rendering properties with increased brightness
CN103828487B (zh) 具有可选择和/或可调节色点的半导体发光器件以及相关方法
US10541353B2 (en) Light emitting devices including narrowband converters for outdoor lighting applications
US9048113B2 (en) Cost-effective LED lighting instrument with good light output uniformity
US20140167601A1 (en) Enhanced Luminous Flux Semiconductor Light Emitting Devices Including Red Phosphors that Exhibit Good Color Rendering Properties and Related Red Phosphors
US20060060879A1 (en) High ouput small area group III nitride leds
US9219202B2 (en) Semiconductor light emitting devices including red phosphors that exhibit good color rendering properties and related red phosphors
TWI597862B (zh) 具阻障層的光電半導體元件
KR102193591B1 (ko) 광대역 발광 장치
KR20150092674A (ko) 발광 소자 및 발광 소자 패키지
JP2000150961A (ja) 発光基板ｌｅｄ素子
US20140131749A1 (en) Lighting apparatuses and driving methods regarding to light-emitting diodes
US9905735B1 (en) High brightness, low-cri semiconductor light emitting devices including narrow-spectrum luminescent materials
TW201739067A (zh) 具阻障層的光電半導體元件
US20240162391A1 (en) Lumiphoric material arrangements for cover structures of light-emitting diode packages
US20140014987A1 (en) Methods and apparatuses for shifting chromaticity of light

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130625

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130625

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140212

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140218

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140516

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20141007

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150106

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150310

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150403

R150 Certificate of patent or registration of utility model

Ref document number: 5728007

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees