TW201105569A - Method of forming a metal micro-structure - Google Patents

Abstract

Disclosed is a method of forming a metal micro-structure, which is suitable for micro-structure element process. Upon forming three-dimensional metal micro-structure on micro-structure elements by using the method in this invention, it needs neither to electroplate a second metal to enclose the metal periphery, nor to etch the second metal. It can decrease the residual stress caused by electroplating and residual stress is free between the metal layers, so that the substrate adhered by the metal will not deform, incurring no influence on subsequent processing of the micro-structure element. Because it is no need to etch the second metal, there is no problem of etchant infiltrating into the interfaces, thereby no fears of decreasing adhesion between the interfaces and influencing the function of micro-structure element.

Description

201105569 VI. Description of the Invention: [Technical Field] The present invention relates to a method for forming a microstructure, and more particularly, to a method for forming a metal microstructure, which is capable of being reduced in a microstructure tree process The residual stress caused by the electric ore, the metal riding has residual stress, and the metal substrate is not deformed, which does not affect the subsequent process of the microstructured component. [Prior Art] For the current micro-electromechanical technology, micro-electromechanical secrets are small, mass-produced, and can provide many high-performance components, etc., but the goal is still, Xe has a smaller MEMS, a lower energy consumption, a weaker power, and a more stable MEMS system. However, in order to achieve a more stable and reliable system of MEMS, the micro-components on the top of the micro-components are better than the observation, such as MEMS probe card (_s pr〇be card) It is a subject to be solved. In the Announcement of the Announcement of the Republic of China Patent Gazette/52 on the side of the "Deep Electroforming Molding Process for the Infusion of the 含 ϋ ϋ 」 」 」 」 」 」 」 」 」 」 」 」 」 」 」 」 」 」 二 二 二 二 二 二 二 可 可 可 可 可The nickel-electric hybrid of the electric heating wiper not only maintains the low internal stress of the nickel electroformed layer, but also effectively improves the casting (4) chamber force for the deep recording of the electric scale molding machine, which can effectively raise the nickel microstructure. The reduction ratio and the current density during the electroforming of 101105569 are not the same as how to make a microstructured component with a good metal microstructure. In the invention announcement of the Republic of China Patent Gazette/public office 2 "Measurement of three-dimensional microstructure and its formation method", although the three-dimensional microstructure is discussed, the technique is applied to the coaxiality of the three-dimensional microstructure system for electromagnetic energy. Passing the line. In the invention of the Republic of China Patent Gazette, the "Three-Dimensional Micro-Knotting/Forming Method" in the Invention Bulletin / Publication No. "Despite the two-dimensional microstructure, the technical feature is that the three-dimensional microstructure is continuously slain. New frequency _ (four) 丽, the microstructure is used, for example, in a coaxial transmission line of electromagnetic energy. In the Announcement of Invention of the Republic of China Patent Publication No. 2,829,358, "Method of joining workpieces made of stainless steel, nickel or alloy, manufacturing of microstructured components, and microstructured components" Microstructural elements, however, are technically characterized by a method for joining at least two workpieces made of non-recorded steel, nickel or a town alloy, and for manufacturing from a microreactor, micro heat exchanger, a micro-cooler, and a method of grouping microstructured elements of a micro-mixer, furthermore, with respect to a microstructure element, such as a fluid structure comprising interconnected layers of microstructured elements made of stainless steel, nickel or nickel alloy The components. U.S. Patent No. 5,190, 637, Formation Of Microstructures By Multiple Level Deep X-Ray Lithography With Sacrificial Metal 201105569, a technical method for manufacturing a metal microstructure component of six types of roads, which is characterized by six 'help steps 1. The substrate forms a photoresist, which is exposed and developed through the reticle to form a pattern of riding. Step 2: In this pattern, the main metal is electroformed (primary 1); Step 3: remove the remaining photoresist, and then the electric mine The secondary metal surrounds the primary metal, but the second metal must have a certain ratio to the primary metal. For example, the primary metal is nickel (nickel, the first metal is silver (five) ver) or copper. (Copper), Step 4: Grinding (planarizati〇n) the main metal and the second metal to make the structure highly responsive; Step 5: Repeat step 4 until the required structure is the same 'and' step 6.丨 The second metal, leaving only the microstructured components of the main metal. However, the disadvantages of US Patent No. 5,190,637 are: 1. The second metal needs to be electroplated. If the area occupied by the second metal is relatively large, the residual stress caused by electroplating must be reduced as much as possible, otherwise it is easy to make Deformation of the substrate to which the main metal is attached, resulting in failure to carry out subsequent processes; 2. Residual stress between each layer of the main metal; and, & although the etching solution is adjusted as much as possible to have a higher selectivity ratio between the main metal and the second metal, However, the surname engraving will still penetrate into each layer of the interface, resulting in a decrease in the adhesion of each layer, which in turn affects the reliability of the microstructured components. Therefore, how to find a metal microstructure forming method, when forming a three-dimensional metal microstructure of a microstructure component, it is not necessary to plate a second metal to surround the main metal periphery, and there is no 201105569 etched d first metal, thereby reducing plating The residual stress caused by the residual metal layer does not interfere with the substrate adhesion caused by the force metal, and does not affect the subsequent process of the microstructure element. Oh, since there is no need to name the second metal, there will be no surname. The problem of liquid seepage - does not cause a reduction in the domain force of each layer, and does not affect the performance of the microstructured components, which is a problem to be solved. SUMMARY OF THE INVENTION The purpose of this month's material is to provide a method for forming a structure of a golden structure, which is applied to micro, ". In the process of forming a three-dimensional metal microstructure of the microstructure element, the second metal of the electric ore is not required to surround the periphery of the metal, and the second metal is not required to be engraved. The X-object of the present invention is to provide a kind of gold-like crystal into a green structure, which is applied to a microstructure component process, and when the three-dimensional metal microstructure of the microstructure component is formed, since the second metal of the electric clock is not required to surround The periphery of the metal, therefore, can reduce the residual stress caused by the electro-recording, the axial force of the gold fine, and the deformation of the pinnacle does not cause deformation, without affecting the subsequent process of the microstructured component. The re-demonstration of the present invention lies in the touch-light rotation axis branch, which is applied to the micro-structured element Lai Cheng, and the township Lai's reversal of the reading of the golden phase, because there is no need for Na Erlai' The problem does not result in a reduction in the adhesion of each layer without the function of rotating the microstructured components. According to the above, the metal microstructure forming method of the present invention comprises the steps of: first preparing a substrate to facilitate subsequent metal microstructure formation on the substrate; and subsequently forming on the surface of the substrate. a metal microstructure of two or more layers, wherein each metal microstructure is composed of one material, and the metal microstructures of the two or more layers may be composed of the same material and/or different materials; Reactive ion etching removes other materials than the two or more metal microstructures, where the liquid or reactive ions are not mixed with the gold 4 microstructure; finally, a good metal micro is obtained on the substrate. structure. The present invention will be described in detail by the following specific embodiments, and with the accompanying drawings, in the following description of the accompanying drawings: FIG. a flow chart for demonstrating the four steps of the method for forming a metal microstructure of the present invention. The method of forming a metal micronosed lion according to the present invention is as shown in the first step. First, in step 11, a substrate is prepared to facilitate the Subsequent metal microstructure formation is performed on the substrate' and proceeds to step 12. The step 12' successively forms two or more metal microstructures on the surface of the substrate, where each layer of the metal microstructure is composed of one material, and the second layer of the metal 201105569 may be made of the same material. And/or composed of different materials, and step i3. In step 13 'removing the material other than the two or more metal microstructures by liquid or reactive ion etching', the (4) or reactive ion fine does not face the metal microstructure of the two or more layers, and proceeds to the step 14. In step 14, a good metal microstructure is obtained on the substrate. Fig. 2 is a flow chart for showing a detailed flow chart of the steps of preparing a substrate in Fig. 1. As shown in FIG. 2, first, in step m, a substrate is selected, which is selected from a stone substrate, a glass substrate, a ceramic substrate, etc., and proceeds to step 12; or, in step in ' After the substrate is selected from a germanium substrate, a glass substrate, a ceramic substrate, or the like, the process proceeds to step 112. In step 112, a seed layer is deposited on the substrate, where the seed layer is a plating initiation layer, which needs good electrical conductivity and adhesion to the substrate, and is generally selected from Cr/Au ( Cr under Au), Ti/Au (Ti under Au), Ti/Cu (Ti under Cu) or Ti-W/Au (Ti-W under Au), taking Cr/Au or Ti/Au as an example, Cr about 100 -200A, Au is about 1000-2000A. In addition, the deposition technique is selected from evaporation, sputtering, electroless, etc.; after completion of step 112, 'steps into the step; [2. Fig. 3 is a flow chart for showing a detailed flow chart showing the steps of forming two or more metal microstructures successively on the surface of the substrate in the first drawing. As shown in FIG. 3, No. 201105569, first, in step 121, a photoresist and/or a hard wax and/or a high molecular polymer are coated on the substrate, depending on the actual implementation, where the photoresist is approved. Suitable techniques can be used depending on the photoresist characteristics. 'Spin coats, Spray c〇ating, lamination, casting, etc.' The photoresist can be positive, such as ciariantAZ4620, TOK LA900, ΡΜΜΑ, and the photoresist can be negative, For example, jSR THB-^MicroChem SU-8, epoxy-base photoresist/Su-8, etc.; after completion of step 121, the process proceeds to step 122. In step 122, photoresist baking is performed, after the photoresist is baked, the solvent is evaporated to harden the light, and then exposed and developed to form a desired microstructure pattern, wherein the baking method There is a heating plate direct heating (direct back such as hot plate), oven (Oven) or infrared heating (ir backing), etc., exposure methods are X-ray lithography, UV lithography, direct write e-beam, etc.; after completion of step 122, And proceed to step 123. In step 123, the metal structure required for electroplating in the micro pattern recess is generally selected from Au, Cu, Ni, Ni-Mn alloy, Ni-Fealloy, Ni-Co alloy, Sn-Pb, etc. Here, before the electroplating, a seed layer may be deposited in the micro pattern recess, which is an electroplating starting layer, which needs good electrical conductivity and adhesion to photoresist and key metal. Available from Cr under Au, Ti under Μι,

Ti under Cu or Ti-W under Au, etc., taking Cr/Au or Ti/Au as an example, Cr is about 201105569 is 100-200A, Au is about i〇〇〇_2〇〇〇a, and another deposition technique is selected from steaming. Plating, sputtering, electroless plating, etc.; or 'Before performing electroplating, it is not necessary to deposit a seed layer first, depending on the actual implementation situation; after completion of step 123, and proceeding to step 124. Grinding in step 124 'grinding' will make the thickness of the photoresist consistent with the thickness of the plated metal, wherein the grinding process is selected from chemical mechanical polishing (CMP), mechanical lapping, polishing (polishing). ), etc., and proceeds to step 125. Steps 121 to 124 are repeated in step 125 to form two or more metal microstructures on the surface of the substrate. Figure 4 is a flow chart showing a detailed flow chart illustrating the steps of removing liquid or reactive ions from the second or more metal microstructures in the second drawing. As shown in FIG. 4, in step (3), the solvent or reactive ions are removed to remove the photoresist and/or hard « and/or high molecular polymer, the ribs release the three-dimensional metal microstructure' and proceed to step 132. Or, after releasing the three-dimensional metal microstructure, proceed to step 14. At step 132, the seed layer is removed with an etchant and proceeds to step 14. Figure 5 is a flow chart showing the flow of the embodiment of the metal microstructure method of the present invention. As shown in Figure 5, please refer to the schematic diagram of the hth to the second figure. First, select a substrate coffee in step 2, and the substrate is selected as 201105569 from the stone substrate, glass substrate, ceramic substrate, etc. Depositing a first seed layer 201 on the substrate 1 and then coating the first layer of photoresist 202. Here, the first seed layer 201 is an electroplating starting layer, and needs good electrical conductivity and adhesion to the substrate. Generally available from Cr under Au, Ti under Au, Ti under Cu or Ti-W under Au, with Cr/Au or

For example, Ti/Au, Cr is about 100-200A, and Au is about 1000-2000A. In addition, the deposition technique is selected from the group consisting of evaporation, sputtering, and electroless. For example, the photoresist of the coating can be selected from spin coating, spray coating, lamination, casting, etc. according to the suitable photoresist technology; the photoresist can be positive, such as Clariant AZ4620, TOK LA900, PMMA, and photoresist It can be a negative type such as JSR THB-126N, MicroChem SU-8, etc., and a suitable photoresist can be selected according to the product characteristics. Since the polishing process is required in the subsequent process of the present invention, in this embodiment, the structural strength is high. Ep0xy-base photoresist/Su-8 and the photoresist is applied by spin coating to facilitate subsequent process development. The process of the step is as shown in Figure 6-a and proceeds to step 22. In step 22, the first layer photoresist 202 is baked, and after baking, the solvent is evaporated to harden the first layer photoresist 2G2, which is exposed and developed, and is used for exposure and development. The photomask is 203 to form a first-layer photoresist microstructure 204 required for forming; wherein the baking method includes direct heating of the heating plate, oven or infrared heating, and the exposure method includes X-my llth〇graphy, uv Hth〇graphy, For example, the example of hot plate backing/UV exposure is as follows. The process of step • ^ is as shown in Figure 6_b. After completion of step 22, the process proceeds to step. In step 23, the desired metal 205 structure is electroplated in the first layer of photoresist microstructure 2 〇 4 凹 recess, generally electroplatable metal 2 〇 5 optional order Au, Cu, Ni, Ni-Μπ 'step 23 The process is as shown in Figure 6-c of the first, Ni-Fe alloy, Ni-Co alloy, Sn-Pb, etc., and proceeds to step 24e.

In step 24, a grinding process is performed to obtain a first layer of metal micro-junction, and the grinding process is such that the first-layer photoresist 2〇2 is in conformity with the thickness of the electro-mineral metal, wherein the grinding processing method selects self-machine chemical processing (CMP). , mechanical grinding, polishing, etc.; in addition, the photoresist should be epoxy-base photoresist ^ MicroChem Su-8. 24 . The process shown in Figure 6-d, and go to Step Township 25. In step 25, the photoresist coating operation in step 21 is repeated, and the wire coating is again performed to form the second layer photoresist 2〇7. The process of step 25 is as shown in Fig. 6_e, and the process proceeds to step 26. The second layer photoresist 207 is baked, exposed, and developed in step 26 to form a desired second layer photoresist microstructure 2〇8 pattern. Here, the mask 213 is used, and the process of step 26 is as shown in the sixth step. As shown in the ~f diagram, go to step 27. In step 27, a second seed layer 209 is deposited. The second seed layer 2 〇 9 $ electric bond starting layer needs good electrical conductivity and adhesion to the photoresist and the plated metal. Generally, 12 201105569 is taken from Cr under Au ' Ti _er Au, Ti 吟cu 〇r Ti—, - « Cr/Au or Ti/Au m > Cr ^ l〇〇-2〇GA , Au ^ 1000-2000A ^ ^ - Shen Shi _ Self-portrait, said no electricity, this implementation _ ship paper here, the second layer of photoresist microstructure 208 is wider and larger than the first layer of micro-structure 2〇4 to avoid pores coated on the second layer of metal microstructure 211, therefore, the second seed layer 209 is deposited first, and the process of step 27 is as shown in Figures 6-g and proceeds to step 28. _ In step 28, the metal 210 structure required for the electric bond in the pattern hole of the first layer photoresist microstructure 208, generally the metal 210 of the ore can be selected from Au, Cu, Ni, Ni_Mn alloy Ni Fe alloy, Ni- C〇ali〇jr, Sn_pb, etc., the process of step 28 is as shown in Fig. 6-h and proceeds to step 29. In step 29, the rubbing process is performed to obtain a second layer of metal microstructure, and the grinding process is such that the second layer of photoresist 2〇7 is consistent with the thickness of the plated metal, wherein the grinding process is selected from self-machined processing (CMP). ), mechanical grinding, polishing, etc.; in addition, the photoresist should be used with the mechanical strength of the door epoxy__base ph〇t〇resist such as [cr〇Chem 8, the process of step four as shown in Figure 6-i and proceed to step 3 Hey. In step 3, the third layer of photoresist 212 is applied to form a third layer of photoresist 212. Step I of step 30 is as shown in the figure and proceeds to step 3, and step 3 is performed to perform a third layer of photoresist. 212 for baking, exposing, developing, to form a desired third layer of photoresist microstructure 215, here, using a mask 214, step 31 of the process 13 201105569 as shown in Figure 6-j• Step 32. In step 32, the metal 216 structure required for electroplating in the pattern recess of the third layer photoresist microstructure 215 is generally selected from the group consisting of Au, Cu, Ni, Ni-Mn alloy, and Ni-Fe alloy. , Ni-Co alloy, Sn-Pb, etc., the process of step 32 is as shown in Fig. 6-k and proceeds to step 33.

In step 33', a grinding process is performed to obtain a third layer of metal microstructure 217, and the polishing process is such that the third layer of photoresist 212 conforms to the thickness of the plated metal 216, wherein the grinding process is selected from machine chemical processing (CMP), mechanical grinding. In addition, the photoresist should be ep0Xy_base photoresist with mechanical strength such as [croChem Su-8, the process of step 33 is as shown in Figure 6-1 and proceeds to step 34. In step 34, the first layer photoresist microstructure 204, the second layer photoresist microstructure 208, and the third layer photoresist microstructure 215 are removed by solvent or reactive ion etching (not shown) for release. a three-dimensional metal microstructure 218 comprising a first layer of metal microstructure coffee, a second layer of metal microstructure 2U, and a third layer of metal microstructure 217, the process of step (4) is as shown in Figure 6-m, and proceeds to Step evil. 'The 7F removal is not covered by the first layer of metal microstructure measurement, the second layer of metal microstructure coffee, and the third layer of metal micro-junction. The process of step 35 is as shown in Figure 6-n. . 201105569 Figures 6-a through 6-n are schematic views showing the process of the process steps of this embodiment using the metal microstructure method of the present invention illustrated in Figure 5. Figure 7 is a flow chart showing the flow steps illustrating another embodiment of the method of using the metal microstructure of the present invention. As shown in FIG. 7, first, in step 41, a substrate 300 is selected, which is selected from a germanium substrate, a glass substrate, a ceramic substrate, etc.; a first seed layer 301 is deposited on the substrate, and the first layer is deposited. The photoresist 302, here, the first seed layer 301 is an electroplating starting layer, and needs good electrical conductivity and adhesion to the substrate 3'. Generally, it can be selected from Cr under Au 'Ti under Au, Ti under Cu or Ti-W under Au, taking Cr/Au or Ti/Au as an example, Cr is about 100-200A, Au is about 1000-2000A. 'Other' deposition technology is selected from steamed ore (evap0rati〇n), difficult to mine (Sputtering) ), electroless, etc., in this example, the Tibetan mine is taken as an example; the photoresist of the coating may be selected from the sPin coating, spray coating, lamination, casting, etc. according to the photoresist characteristics; the photoresist may be positive Type, such as ciariant AZ4620, TOK LA900, PMMA, and, the photoresist can be negative type such as jsr THB-126N,

MicroChem SU-8, etc., can select a suitable photoresist according to product characteristics, and the subsequent processing of the present invention requires a grinding process. Therefore, in this embodiment, an epoxy-base photoresist/Su-8 having a higher structural strength is used. Spin coating is used to approve the photoresist to facilitate subsequent process development. The process of step 41 is as shown in Figure 8-a, and proceeds to step 42. 15 201105569 In step 42, the first layer of photoresist 3 〇 2 is baked, after baking, the solvent is bursted to make the first layer of photoresist 302 hard, and then exposed and developed, where light is used. The cover 303 is formed by forming a first layer of photoresist microstructure 3〇4 pattern; wherein the baking method comprises direct heating of the heating plate, heating or red stabilization, and the exposure method includes x_ray lithography, UV lithography, direct write e -beam, etc.; this embodiment takes hot plate backing/UV exposure as an example, and the process of step 42 is as shown in section 8-b.

As shown in the figure, after the completion of step 42, the process proceeds to step 43. In step 43, the metal 305 structure required for the electric key in the pattern recess of the first photoresist layer microstructure 304 is generally selected from Au, Cu 'Ni ' Ni-Mn alloy Ni Fe alloy ϋ alloy , Sn-Pb, etc., the process of step 43 is as shown in Figure 8-c, and proceeds to step 44. In step 44, a grinding process is performed to obtain a first layer of metal microstructures 3〇6, and the grinding process is such that the first layer of photoresist thickness is consistent with the thickness of the electro-mineral metal 3〇5, wherein the grinding type is selected from the machine chemical processing ( CMp), mechanical grinding, polishing, etc.; in addition, the photoresist should be epoxy-base photoresist ^ MicroChem Su-8 » # The process of step 44 is as shown in the figure, and proceeds to the step milk. The 'step 45' is applied to the second layer photoresist 307 to form a second layer photoresist 307. The process of step 45 is as shown in Figs. 8 to e, and the process proceeds to step 46. Step 46 'Into the second layer of photoresist, baking, exposing, and developing to form a second layer of photoresist microstructure 3〇8 required for 201105569. Here, the mask 313 is used, and the process of the step is as follows. As shown in the figure 8-f, the process proceeds to step π. In step 47, the desired metal 310 structure is electroplated in the second layer of the photoresist microstructure pattern 3〇8, and the generally electroplatable metal can be selected from Au, Cu, sin, the alloy, Ni-Fe alloy, Ni. -Co alloy, Sn-Pb, etc., the process of step 47 is as shown in Fig. 8-g, and proceeds to step 48.

In step 48, a grinding process is performed to obtain a second layer of metal microstructures & i, and the grinding process is such that the thickness of the second layer of photoresist 307 is the same as the thickness of the plated metal 31 ,, wherein the grinding process is selected from the machine chemical processing _, Mechanical grinding, polishing, etc.; in addition, the photoresist should be ep〇xy-base ph esist^ic her (4) with high mechanical strength, the process of step 48 is shown in Figure 8-h, and proceed to step 49 . The first layer of photoresist microstructure 304 and the second layer of photoresist microstructures are removed by solvent or reactive ion milling (not shown) in step 49 to release the first layer of metal microstructures. And the three-dimensional metal microstructure 318 of the second metal microstructure 311, the process of step 49 is as shown in Figure 8-i, and proceeds to step 5〇. In step 5, the first seed layer portion (10) not covered by the first layer metal microstructure 306 and the second layer metal microstructure 311 is removed by a liquid engraving (not shown), as shown in FIG. 8_1. Shown) to obtain good metal micro-junction on the substrate, the process of step 50 is as shown in Figure 8-j. 17 201105569 Figures 8-a through 8-j are schematic diagrams showing the use of the metal structure of the present invention illustrated in Figure 7; Figure 9 is a flow diagram showing the flow steps illustrating a further embodiment of the method of using the metal microstructure of the present invention. As shown in FIG. 9, first, in step 6, the substrate is selected from the substrate 400. The substrate is selected from a wire plate, a glass substrate, a shattered substrate, etc., and a first seed layer is deposited on the substrate 400. —Layer photoresist 4〇2, where the first seed layer 401 is an electric money starting layer, which needs good electrical conductivity and adhesion to the substrate 400, and can be selected from CrunderAu, TiunderAu, and heart resistant. Cu or Ti-W under Au, taking Cr/Au or Ti/Au as an example, & about 1〇〇2〇〇A, Au about 1000-2000A, and the deposition technique is selected from evaporation (evap〇rati〇) n), SPU (ttertering), electroless plating (electr〇less), etc., this example takes Lin as an example; the photoresist of the coating can be selected from spin _ing, spray coating, lamination, casting according to the suitable technique according to the photoresist characteristics. Etc.; the photoresist can be positive, such as Clariant AZ4620, TOK LA900, PMMA, and 'the photoresist can be negative such as jSR THB_126N,

MicroChem SU-8 and so on can choose the appropriate photoresist according to the product characteristics, because the subsequent processing of the invention must be processed, _, in this real customs, the county is higher than the ep〇Xy_base Phot_ist/Su-8 Rotating coating is used to approve the photoresist to facilitate subsequent process development, step 61 as shown in the iQ_a towel, and proceeds to step 62. 201105569 & Step 62 'Bake the first layer of photoresist 402, after baking, the solvent is released to make the first layer of light p and 4 〇 2 胄 hard, and then exposed and developed to form The first layer of photoresist microstructure 4〇4 pattern, here, the mask 4〇3 is used; wherein the baking method is direct heating of the heating plate, county or infrared freshening, and the exposure method is X-ray lithography, UV lithography For example, hot plate backing/UV exposure is used as an example. The process of step 62 is as shown in FIG. 10-6. After completion of step 62, the process proceeds to step eg. In step 63', the metal 405 structure required for the electric ore in the first layer of the photoresist microstructure 4〇4 pattern pit, the generally electroplatable metal 4〇5 may be selected from Au, (7), then, then a total, Ni-Fe alloy, Ni-Co alloy, Sn-Pb, etc., the process of step 63 is as shown in Fig. 10-c, and proceeds to step 64. The first layer photoresist 4 〇 2 is removed at step 64', and the process of step 64 is as shown in Fig. 1 and proceeds to step 65. In step 65, a hard-dissolved hard butterfly or high-molecular polymer is applied to form a first hard layer 407'. The first-hard layer 407 material can withstand the mechanical force of the grinding process, and can sometimes improve the limitation of the photoresist selection. The process of step 65 proceeds to step 66 as shown in the figure. In step 66, processing is performed to obtain a first layer of metal microstructures 4〇6, and the grinding process is such that the coated first hard layer 4〇7 is consistent with the thickness of the money metal, 201105569. Processing (GMP), thief grinding, general, the process of step 66 is as shown in Figures 1G to f, and proceeds to step 67 » in step 67, a second layer of photoresist 408 is applied to form a second layer of light. Block 408, the process of step 67 is as shown in the figure of Figure 1, and proceeds to the step. Step 68' performs the baking, exposing, and developing of the second layer of photoresist 4〇8 to form the first layer of photoresist microstructure 4〇9 required for the formation. Here, the mask 41 is used, and the process is as follows: As shown in the first figure (Ηι, and proceed to step (10).: Step 69 'In the second layer of photoresist microstructure 409, the metal required for electricity money 411, "construction' is generally electroplatable The metal 411 can be selected from Au, Cu, Ni, Ni-Mn Υ Nl Fe aU 〇 y, Ni-Co all 〇 y, Sn-Pb, etc., and the process of step 69 is as shown in the first 〇-i diagram. And proceeding to step 7〇. The process of removing the second layer photoresist 4〇8' step of step 70 is as shown in the figure φ, and proceeds to step screw 71. Step 71 S is easy to dissolve hard or bad Molecular polymer to form the second hard layer 2 The material of the first hard layer 412 can withstand the mechanical force of the grinding process, and can also improve the limitation of the photoresist selection. The process of step 71 is as shown in the figure (4). Go to step 72. In step 72, a grinding process is performed to obtain a second layer of metal microstructure 413, which will make the applied second hard (10) and electroplated gold thicker. Same, wherein 20201105569 grinding mode selected from organic chemistry plus the MP-mail), mechanical Bi, County, step 72 of the process as shown in the first FIG 1〇-1, and proceeds to step 73. In step 73, the first hard layer 407 and the second hard layer 412 are removed by solvent or reactive ion etching (not shown) for releasing the first layer of metal microstructures 4〇6, and the second a three-dimensional metal microstructure 414 of the layer metal microstructure 413; and the first layer covered by the non-fresh metal layer 4〇6 and the second layer metal microstructure 413 are removed by a side liquid (not shown) A seed layer portion (not shown) is used to obtain a good metal microstructure 414 on the substrate, and the process of step 73 is as shown in the figure i-m. Figures aa-a to 〇m-m are diagrams for illustrating the process of the process steps of this embodiment using the metal microstructure method of the present invention illustrated in Figure 9. Figure 11 is a flow chart showing the flow steps illustrating another embodiment using the metal microstructure method of the present invention. As shown in FIG. 9, first, in step 81, the substrate 500 is selected and the first layer photoresist 501 is deposited on the substrate 500. The substrate 500 is selected from the stone substrate, the glass substrate, the ceramic substrate, and the like. The coating technology can be selected from the coating properties, coating CQating, laminati〇n, casting, etc. according to the photoresist characteristics; the photoresist can be positive such as Clariant AZ462〇, T〇K LA9〇〇, pM, and The photoresist may be of a negative type such as ep〇xy_base ph〇t〇resist/Su 8, JSR ΤΗΒ-126N, MicroChem SU-8, etc., and a suitable photoresist may be selected according to product characteristics, which is required to be ground after the embodiment. The processing process, therefore, the implementation of the structural strength 21 201105569 ep〇Xy-base photoresist/Su-8 is more than the rotary coating method to approve the photoresist, so that the subsequent process is facilitated, the step of the township 81 process as the 12_a As shown in the figure, the process proceeds to step 82. In step 82', the first layer of light P and 501 are baked, and after being baked, the solvent is evaporated to harden the first layer photoresist 5Q1, wherein the baking method is directly heated by a heating plate, a flood box or an infrared ray. Heating or the like, here, using the photomask 502, the present embodiment is directly heated by the heating plate as an example. The process of the step 82 is as shown in Fig. 12-b, and proceeds to step 83. In step 83, a second layer of photoresist 503 is applied, and after the second layer of photoresist 5 〇 3 is applied, baking is performed. The process of step 83 is as shown in Fig. 12-c, and the process proceeds to step 84. In step 84, a second layer of photoresist is exposed, and the exposure mode is X-ray lithography, UV lithography, direct write e-beam, etc., here, a photomask 504 is used; in this embodiment, uv exposure is taken as an example, in the step After the completion of 84, the process of step 84 is as shown in the figure i2-d, and proceeds to step 85. In step 85, the first layer photoresist 5 (after developing the second layer photoresist 502) is used to form a first layer photoresist microstructure pattern and a second layer photoresist microstructure 506. Pattern; the biggest difference between this embodiment and the embodiment in FIG. 5 is that the chemical amplification type positive or negative photoresist (Chemical ship milk positive/negative photoresist) with selectable surface resolution, such photoresist has Repeated photoresist

22 201105569 The characteristics of one development after fire and baking exposure are such as Micr〇chem su_g. Therefore, mm 5 ® can reduce some production processes; after step 85, the process of step 85 is as shown in Fig. 12_e And proceed to step 86. The seed layer 507 is deposited in step 86', and the seed layer 507 is an electroplating starting layer, which needs good electrical conductivity and riding resistance with photoresist and Weijin, and can be selected from Cr.

Ti under Au ' Ti under Cu or Ti-W under Au, taking Cr/Au or Ti/Au as an example 'Cr about 1〇〇_2〇〇A, Au is about the surface touch a, the process of the step is as shown in the 12th As shown in the -f diagram, and proceeds to step 87. Step 87, electroplating the desired metal 5 (10) structure in the first layer photoresist microstructure 5〇5 pattern and the second layer photoresist microstructure 506 pattern pit, generally the metallurgical metal 5(10), (3) Ni, Ni -Mnalloy, Ni-Fe alloy, Ni-Coalloy, Sn-Pb The process of step 87 is as shown in the figure 2_g, and proceeds to step 88. ; 8 grinding processing to obtain the first layer of metal microstructure Mg, grinding plus: the total thickness of the first layer of photoresist 5 〇 1 and the second layer of photoresist 5 〇 2 is consistent with the thickness of the electric forged metal _, complex.肀, grinding processing method selects self-machine chemical processing (CMp), mechanical grinding, llA 〇 〇 〇 photoresist should use high mechanical strength ep〇xy_base ph〇t〇resist such as hemSu~8, the process of step 88 is as follows As shown in the figure 12-h, the process proceeds to step 89. : Step 89, after the third layer of photoresist 51 is coated, and then baking, the third layer of light 23 201105569 After the 510 is baked, the solvent is evaporated to make the three layers of photoresist 51 hard, and then exposed. 'Developing, here using the reticle 511 to shape the desired third layer photoresist microstructure 512 pattern' is performed as shown in Figure 12-i, and proceeds to step (10). In step 90', the metal 513 structure required for the electric chain in the third layer photoresist microstructure 512 pattern recess is generally selected from Au, &, attached, n alloy, Ni-Fe alloy. , Ni-Co all〇y, Sn_pb, etc.; grinding processing to obtain • 帛 two-layer metal microstructure 514, the grinding process will make the thickness of the third layer photoresist 510 and the thickness of the electric ore metal 513, wherein the grinding processing method Select self-machine chemical processing (10), mechanical grinding, extinction, etc.; in addition, the photoresist should be a high mechanical strength eqing seven photosexist such as MiCr〇ChemSu-8, the process of step 9 is as shown in the old figure, And proceed to step 91. In the process of step 91 'Step 91, as shown in FIG. 12-k, the first layer photoresist microstructure 5〇5 and the second layer light are removed by solvent or anti-allergic ions (not shown). The micro-structure 506 and the third photoresist microstructure 512 are used to release the three-dimensional metal microstructure including the first metal microstructure 509 and the second metal microstructure 514 for good performance on the substrate. Metal microstructure 515. Figures 12-a through 12-k are schematic views showing the process of the process steps of this embodiment of the metal microstructure method of the present invention illustrated in Figure u. Based on the above-mentioned practical compensation, we can get the invention - a kind of metal microstructure forming method 24 201105569 The method is applied to the microstructure component process, and the metal micro-junction lion forming method of the invention is used to form a three-dimensional microstructure. When the metal microstructure is used, there is no need to use two kinds of metals to surround the metal. @There is no residue caused by the two kinds of metals. There is no residual stress between the metal layers, and the substrate to which the metal is attached is not deformed. It does not affect the subsequent process of the microstructured component, and since there is no second metal in the outline, there is no problem that the surname infiltration penetrates into each layer of the interface, and the adhesion of each layer is not lowered. The function of microstructural components. The metal microstructure forming method of the present invention comprises the following advantages: 1. When forming the three-dimensional metal microstructure of the microstructure element, it is not necessary to plate the second metal to surround the metal periphery without the second metal. 2. When forming the three-dimensional metal microstructure of the microstructured component, since the second metal of the electric ore is not required to surround the periphery of the metal, the residual stress caused by the electric ore can be reduced, and there is no residual stress between the layers of the metal. The substrate to which the metal is attached is not deformed, and does not affect the subsequent process of the microstructured component. 3. When forming the three-dimensional metal microstructure of the microstructured component, since there is no need to name the second metal, there is no problem that the buttoning solution penetrates into each layer interface, and the adhesion of each layer is not lowered, and the effect is not affected. The function of microstructural components. The above is only the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. All other equivalent changes or modifications to the present invention, which are not departing from the spirit of the present invention, should be included in the following. Within the scope of the patents described. [Simple diagram of the drawing, the i-th picture is - flow paste, the ribs show the flow steps of the metal microstructure formation method of the present invention; the second picture is a flow ® to show the explanation in the first picture a detailed flow program of the steps of the substrate; FIG. 3 is a flow chart for displaying a step of forming a metal microstructure of two or more layers successively on the surface of the substrate in the jth pattern - a detailed flow program; 4 is a flow paste, the rib shows the steps in the figure to remove the material other than the metal microstructure above the second layer - a detailed flow program; Figure 5 is a flow chart for displaying A flow chart illustrating an embodiment of the metal microstructure method of the present invention; and FIGS. 6-a through 6-n are schematic diagrams showing the method of using the metal microstructure of the present invention illustrated in FIG. Process Diagram of Embodiment Process Steps FIG. 7 is a flow chart for showing the flow steps of another embodiment of the metal microstructure method using the present invention; FIGS. 8-a through 8-j are schematic views, By using the present invention as shown in Fig. 7 The process of the implementation of the process steps. 26 201105569 FIG. 9 is a flow chart showing the flow steps of a further embodiment of the metal microstructure method of the present invention; 10-a to 1 Ο 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 Process steps of another embodiment of the inventive metal microstructure method; and #12_a to 12-k are schematic diagrams showing the embodiment of the metal microstructure method using the present invention illustrated in FIG. Process conditions for process steps. [Explanation of main component symbols] II 12 13 14 Step 21 22 23 24 25 26 27 28 Procedure • 29 3〇31 32 33 34 35 Step 41 42 43 44 45 46 47 48 Step 49 50 51 52 53 54 Step 61 62 63 64 65 66 67 68 Step 69 70 71 72 73 Step 81 82 83 84 85 86 87 88 89 90 91 Step III 112 Step 27 201105569 121 122 123 124 125 Step 131 132 Step 200 Substrate 201 First seed layer 202 first layer of light Resistor 203 reticle 204 first layer photoresist microstructure 205 metal 206 first layer metal microstructure 207 second layer photoresist 208 second layer photoresist microstructure 209 second seed layer 210 metal 211 second layer metal microstructure 212 Third layer photoresist 214 reticle 215 third layer photoresist microstructure 216 metal 217 third layer metal microstructure 28 201105569 218 metal microstructure 219 first seed layer portion 300 substrate 301 first seed layer 302 first layer light Resistor 303 reticle 304 first layer photoresist microstructure 305 metal 306 first layer metal microstructure 307 second layer photoresist 308 second layer photoresist microstructure 310 metal 311 second layer metal microstructure 313 reticle 318 metal micro Structure 319 first seed layer portion 400 substrate 401 first seed Layer 402 first layer photoresist 201105569 403 reticle 404 first layer photoresist microstructure 405 metal 406 first layer metal microstructure 407 first hard layer 408 second layer photoresist 409 second layer photoresist microstructure 410 reticle 411 metal 412 second hard layer 413 second layer metal microstructure 414 metal microstructure 500 substrate 501 first layer photoresist 502 reticle 503 second layer photoresist 504 reticle 505 first layer photoresist microstructure 506 second layer Photoresist microstructure 201105569 507 seed layer 508 metal 509 first layer metal microstructure 510 third layer photoresist 511 photomask 512 third layer photoresist microstructure 513 metal 514 second layer metal microstructure 515 metal microstructure

Claims (1)

201105569 VII. Patent application scope: h-type metal microstructure forming method, which is a pulse micro-structural component manufacturing process, the metal microstructure forming method includes the following procedures: preparing a substrate; forming two or more layers on the surface of the substrate a metal microstructure; removing a material other than the two or more metal microstructures by a liquid, the liquid φ not surnamed the metal microstructure of the two or more layers; and obtaining a metal microstructure on the substrate. 2. The method for forming a metal microstructure according to the patent application, wherein the step of preparing a substrate comprises the steps of: selecting a substrate; and forming a seed layer on the substrate, the seed layer having a guide And φ adhesion between the substrates can be selected from Cr under Au, Ti under Au, Ti under Cu, Ti-W under Au. 3. The metal microstructure forming method according to claim 1, wherein the process of sequentially forming two or more metal microstructures on the surface of the substrate comprises the steps of: coating photoresist and/or hard Wax and/or high molecular polymer; baking the coated photoresist, after the photoresist is baked, evaporating the solvent therein, 32 201105569, making the photoresist harder, and then entering the (four) light, county to form a station a microstructure pattern required; electroplating a desired metal structure in the microstructure pattern recess; performing a grinding process that causes the photoresist to conform to a thickness of the plated metal; and selecting and utilizing the above steps on the substrate Two or more metal microstructures are formed on the surface. 4. The method of forming the metal microstructure according to Item 3, wherein the deposition is performed in the micro-cavity recess before the microstructure of the microstructure pattern is recessed. a seed layer which is electrically conductive and has adhesion to the photoresist and the metal structure required for the electric ore, and may be selected from Cr under Au, Ti under Au, Ti under Cu, Ti-W Under Au et al. 5. The method of forming a metal microstructure according to the invention of claim 1, wherein the liquid is a solvent for removing photoresist and/or hard wax and/or high molecular polymer, the solvent does not etch the Metal microstructures of more than two layers. 6. The metal microstructure forming method according to claim 2, wherein the liquid comprises a solvent and an etching solution for removing photoresist and/or hard germanium and/or high molecular polymer, The solvent does not etch the metal microstructure of the two or more layers, and the seed layer is removed with the etching solution. 7. The method for forming a metal microstructure according to claim 1 or 2, wherein the substrate is selected from the group consisting of a germanium substrate, a glass substrate, a ceramic substrate, and the like. 8. The metal microstructure forming method according to claim 2, wherein the sinking technique is selected from the group consisting of a steaming clock, a plating plating, and an electroless plating. 9. The method of forming a metal microstructure according to claim 3, wherein the photoresist is selected from the group consisting of spin coating, spray coating, lamination, casting, and the like. The method of forming the metal microstructure according to claim 3, wherein the batch of photoresist is positive. The method of forming a metal microstructure according to claim 3, wherein the batch of photoresist is negative. 12. The metal microstructure forming method according to claim 3, wherein the baking method comprises direct heating from a heating plate, an oven, infrared heating, etc., and the Φ mode of the exposure is selected from x-ray litho Phy, uv lithography, direct write e-beam, etc. 13. The method for forming a metal microstructure according to claim 3, wherein the method of the grinding process is selected from the machine chemical processing ((10)), mechanical grinding Polishing, etc. 14. The method for forming a metal microstructure according to the scope of claim 4 or the item 2 or 3, wherein the metal microstructure of the second layer or more is selected from Au, Cu, attached, and attached. , Ni-Fe ali〇y, Ni-c〇all〇y, Sn__pb, etc. 34 201105569 15. A method for forming a microstructure of a metal, a process for forming a microstructure of a micro-structure comprising the following steps: preparing a substrate; forming two or more metal microstructures on the surface of the substrate; Reactive ion etching removes other materials than the two or more metal microstructures, and does not etch the metal microstructures of the two or more layers; and φ obtains a metal microstructure on the substrate. 16. The method of forming a metal microstructure according to claim 15, wherein the preparing a substrate comprises the steps of: selecting a substrate; and depositing a seed layer on the substrate, the seed layer having conductivity And adhesion to the substrate ' can be selected from Cr under Au ' Ti under Au, Ti under Cu, Ti-W under Au. 17. The metal microstructure forming method according to claim 15, wherein the process of sequentially forming two or more metal microstructures on the surface of the substrate comprises the steps of: coating photoresist and/or hard Wax and/or high molecular polymer; baking the coated photoresist, after baking the photoresist, evaporating the solvent to harden the photoresist, and then performing exposure and development to form a desired Microstructure pattern; 35 201105569 Electroplating the desired metal structure in the microstructure pattern cavity. Performing a grinding process 'grinding process will make the photoresist and the thickness of the key metal uniform; and selecting and using the above steps on the substrate Two or more metal microstructures are formed on the surface. The method for forming a metal microstructure according to the above-mentioned claim, wherein the microstructure is first deposited in the microstructure pattern pit before the metal structure required for the electric ore in the microstructure pattern cavity a seed layer which is electrically conductive and has adhesion to the metal structure required for the photoresist and the electrical bond, and may be selected from Cr under Au, Ti uMa, Ti under Cu, Ti-W under Au Wait. 19. The metal microstructure forming method according to claim 15, wherein the reactive ion etching is used to remove photoresist and/or hard wax and/or high molecular polymer, and the reactive ion etching is not The metal microstructure of the two or more layers is etched. 20. The method of forming a metal microstructure according to claim 16, wherein the reactive ion etching is used to remove photoresist and/or hard wax and/or high molecular polymer, and is removed using an etchant. The seed layer. 21. The metal microstructure forming method according to claim 15 or claim 16, wherein the substrate is selected from the group consisting of a germanium substrate, a glass substrate, a ceramic substrate, and the like. 22. The method for forming a metal microstructure according to claim 17, wherein the technique of depositing the 201105569 is selected from the group consisting of steaming, hiding, and no electric bonding. 23. The method of forming a metal microstructure according to the scope of the invention, wherein the technique of coating the photoresist is selected from the group consisting of spin coating 'spray coating, lamination, casting, and the like. 24. The method of forming a metal microstructure according to claim 17, wherein the batch of photoresist is positive. 25. The metal microstructure forming method of claim 17, wherein the batch of photoresist is negative. 26. The method for forming a metal microstructure according to claim 17, wherein the baking method is directly heated from a heating plate, oven, infrared heating, etc., and the exposure method is selected from X-ray lithography, UV lithography, direct write e-beam, etc. 27. The method of forming a metal microstructure according to claim 17, wherein the method of grinding comprises self-machine chemical processing (CMP), mechanical grinding, polishing, and the like. 8. The metal microstructure forming method according to Item 15 or Item 16 or Item p of the patent application, wherein the metal microstructure of the second layer or more is selected from the alloy, Ni-Fe aUoy, Ni_c〇 aU〇y, Sn pb, etc. 29. The method of forming a metal compositing method, the method of forming a metal structure comprises the following procedure: 37 201105569: selecting a substrate, depositing a first seed layer on the substrate and then coating the first layer of photoresist; Performing the first layer of photoresist baking 'the first layer of photoresist after baking, wherein the solvent evaporates and hardens', then performing exposure and development to form a desired first layer of photoresist microstructure pattern; Metal structure required for electroplating in the first layer of photoresist microstructure pattern pit; performing a grinding process to obtain a first layer of metal microstructure, the grinding process will make the first layer of photoresist and the thickness of the plated metal uniform; The coating operation, the photoresist is again applied to form the second layer of photoresist; the second layer of photoresist is baked, exposed, developed, and the second layer of the photoresist microstructure is used; 'The second seed layer is an electro-recording starting layer having conductivity and the second layer of light is associated with the Wei-jin system. Here, the δ second-layer neo-micro structure is smaller than the first layer photoresist microstructure. Width and size; Electroplating the desired metal structure in the second layer of the photoresist microstructure pattern recess; > grinding force σϋχ to obtain the first layer of metal microstructure, the grinding process will make the two layer photoresist consistent with the thickness of the plating metal; ^ 仃A resistance to the overlay action 're-resistance of the photoresist to form a third layer of photoresist; 仃 first layer touch (four), exposure, development, to form the required third layer of microstructure, · in the third layer of the new micro The metal structure required for the concave pattern of the structural pattern; 38 201105569 The grinding and twisting of the three layers of gold is carried out, and the third layer of the photoresist is made to be the same as the thickness of the plating metal; Removing the first layer photoresist microstructure, the second layer photoresist microstructure, and the third layer photoresist structure, (4) releasing the first layer metal microstructure, the second layer metal microstructure, and a metal microstructure of the third layer of metal microstructures; and removing the layer not covered by the germanium-layer metal microstructure, the second layer metal microstructure, and the third layer metal microstructure by a money engraving _ seed layer portion for the substrate The metal microstructure. The method for forming a metal microstructure according to claim 29, wherein the first seed layer and the second seed layer are selected from Cr under Au, Ti (10), L under Cu, Ti-W under Au, etc. . The method of forming a metal microstructure according to claim 29, wherein the technique of the condition is selected from the group consisting of evaporation, sputtering, electroless plating, and the like. 32. The metal microstructure forming method according to claim 29, wherein the peach photoresisting technique is selected from the group consisting of spin coating, spray c〇ating, and Casting. The method of forming a metal microstructure according to claim 29, wherein the phase resist is negative. 39 201105569 A method for forming a metal microstructure according to claim 29, wherein the eight-baked method is directly heated by a heating plate, oven, infrared heating, etc., and the exposure method is selected from X-ray lith〇 Photography, UV lithography, direct write e-beam, etc. The method for forming a metal microstructure according to claim 29, wherein the method of the grinding process is selected from the group consisting of self-organizing chemistry, jade, mechanical polishing, polishing, and the like. The metal microstructure forming method according to claim 29, wherein the metal microstructure is selected from Au, Cu, attached, Ni-Mn all〇y, Ni-Fe all〇y, Ni_c〇 Alloy, sn-Pb, etc. 37. - A method for forming a metal microstructure, which is a method for forming a metal structure, comprising the following steps: k taking a substrate, the substrate is taken from a substrate, a surface substrate, a substrate, etc.; Depositing a first seed layer and then coating a first layer of photoresist, wherein the first seed layer is an electroplating starting layer, having electrical conductivity and adhesion to the substrate; performing the first layer of contact baking, The first layer of resistive microstructure pattern required for forming after exposure to the first layer of photoresist is hardened, and the first layer of photoresist microstructure pattern required for forming is formed in the first layer of photoresist microstructure pattern pit Metal structure required; grinding and adding material-layer gold structure, grinding and adding nitrate to make the first 201105569 layer photoresist and the thickness of the plating metal; performing photoresist coating to form the second layer of photoresist; The second layer of photoresist is baked, exposed, and developed to form a second layer of photoresist microstructure; the second layer of photoresist microstructure pattern is recessed and the metal structure required for electro-recording; Two-layer metal microstructure, grinding will make The second layer of photoresist is consistent with the thickness of the plating metal; removing the first layer photoresist microstructure and the second layer photoresist microstructure by solvent or reactive ion etching, and the rib release comprises the first layer of metal micro a structure 'and a metal microstructure of the second layer of metal microstructures; and removing, by the etchant, the first seed layer portion not covered by the first layer of metal microstructures and the second layer of metal microstructures The metal microstructure is obtained on the substrate. 38. The method of forming a metal microstructure according to claim 37, wherein the first seed layer is selected from the group consisting of Cr under Au, Ti under Au, Ti under Cu, Ti-W under Au, and the like. 39. The metal microstructure forming method of claim 37, wherein the deposition technique is selected from the group consisting of evaporation, sputtering, electroless plating, and the like. 40. The metal microstructure forming method according to claim 37, wherein the photoresist coating technique is selected from the group consisting of spin coating, spray coating, lamination, 201105569 casting, and the like. The method of forming a metal microstructure according to claim 37, wherein the batch of photoresist is negative. 42. The metal microstructure forming method according to claim 37, wherein the baking method comprises direct heating from a heating plate, an oven, infrared heating, etc., and the exposure method is selected from X-ray lithography, UV lithography, dkeet write e-beam, etc. 43. The metal microstructure forming method according to claim 37, wherein the grinding process is performed by self-machine chemical processing (CMP), mechanical grinding, polishing, or the like. 44. The metal microstructure forming method according to claim 37, wherein the metal microstructure is selected from Au, Cu, Ni, Ni-Mn alloy, Ni-Fe alloy, Ni-C〇alloy, Sn -Pb, etc. 45. A method for forming a microstructure of a metal, which is applied to a process of forming a microstructure, the method for forming a metal microstructure comprising the following steps: selecting a substrate selected from a substrate, a glass substrate, a ceramic substrate, etc.; Depositing a first seed layer and then coating a first layer of photoresist, wherein the first seed layer is an electroplating starting layer, having electrical conductivity and adhesion to the substrate; baking the first layer photoresist After baking, wherein the solvent is evaporated to make the first layer of photoresist harden 'after exposure, w, to the cake micro-structure diagram 42 201105569; electroplating in the first layer of photoresist microstructured kitchen cavity a desired metal structure; removing the first layer of photoresist; coating a hard-dissolving hard wax and/or a high molecular polymer to form a first hard layer, the first hard layer material can withstand the mechanical force of the grinding process, At the same time, the limitation of the photoresist selection can be improved; the grinding process is performed to obtain the first layer of metal microstructure, and the grinding process is performed so that the first hard layer is coated with the thickness of the plated metal; the photoresist is coated to form the first a layer of photoresist; baking, exposing, and developing the second layer of photoresist to form a desired second layer of photoresist microstructure; plating the metal required in the second layer of photoresist microstructure pattern recess Structure; removing the second layer of photoresist; coating the hard soil or the molecular polymer to form a second hard layer, the second hard layer material can withstand the mechanical force of processing, and sometimes improve the photoresist Limitation of selection; advance grinding process~ to the second layer of metal microstructure, the second hard layer coated by the grinding and welcoming has the same thickness as the plating metal; and the first part is removed by solvent or by reactive ion a hard layer, and a second hard layer, 43 201105569 for releasing a metal microstructure including the first layer of metal microstructure and the second layer of metal microstructure; removing the first layer of metal by the money engraving The microstructure, and the portion of the first seed layer covered by the second layer of metal microstructure, to obtain the metal microstructure on the substrate. The metal microstructure forming method according to claim 45, wherein the first seed layer is selected from the group consisting of Cr under Au, Ti under Au, Ti under Cu, Ti-W under Au, and the like. 47. The method for forming a metal microstructure according to claim 45, wherein the deposition technique is selected from the group consisting of evaporation, ore removal, electroless plating, and the like. 48. The metal microstructure forming method of claim 45, wherein the photoresist is selected from the group consisting of spin coating, spray coating, laminati〇n, casting, and the like. 49. The method of forming a metal microstructure according to claim 45, wherein the batch of photoresist is negative. 50. The metal microstructure forming method according to claim 45, wherein the baking method comprises direct heating from a heating plate, an oven, infrared heating, etc., and the method of the light is selected from X-ray lithography. , UV lithography, direct wHte e-beam, etc. 51. The metal microstructure forming method according to claim 45, wherein the method of grinding and processing is selected from the group consisting of self-organizing chemical (CMP), mechanical grinding, polishing, etc. 52. The method for forming a metal microstructure according to the item of the third aspect, wherein the metal microstructure is selected from the group consisting of a person such as Cu, Νι, Νι-Μη alloy, Ni-Fe all〇y, Ni-Co alloy, Sn-Pb, and the like. 53. A metal microjunction _ shot method, which is a microstructural component touch, the metal microstructure forming method comprises the following procedure: selecting a substrate and approving a first layer of photoresist on the substrate, the substrate is selected from a germanium substrate , the glass substrate, the ceramic substrate, etc.; performing the first layer of photo-salt roasting, after the secret baking, dissolving the towel to make the first layer of photoresist harden; approving the second layer of photoresist to append the second layer of light After blocking, the second layer of light is baked and exposed; • the first layer of photoresist and the second layer of photoresist are developed for development of the first layer of fine junctions required for forming And the second layer of the photoresist microstructure 瞧 is the first layer of photoresist, and the second layer of photoresist has the characteristics of multiple exposures of the photoresist L exposure-sub-development; "" depositing the seed layer, the seed layer The electroplating starting layer is electrically conductive and adhered to the first layer photoresist and the second layer photoresist, and the electroplated gold, wherein the second layer light & microstructure is compared to the layer The light-sand structure is wide and large; 45 201105569 in the first-layer light a microstructure pattern, and the second layer The metal structure required for electroplating in the photoresist microstructure pattern pit; the 第 layer metal microstructure is obtained by the 仃 grinding and UX, and the grinding process will make the thickness of the photoresist and the thickness of the electro-mineral metal; the second layer photoresist is coated. After the third layer of photoresist is applied, the scale is polished, and after baking, the solvent is evaporated to harden the third layer of photoresist, and then exposed and developed to form a third layer of photoresist microstructure pattern required for forming. a metal structure required for the electric ore in the second layer of the microstructured pattern pit; performing a grinding process to puncture the second layer of the gold structure, and grinding and adding H such that the thickness of the third layer of the photoresist is consistent with the thickness of the plated metal; And removing the first layer photoresist microstructure, the second layer photoresist microstructure, and the third layer photoresist microstructure by a solvent or a reactive ion side, including the first layer metal microstructure, and the first A metal microstructure of a two-layer metal microstructure to obtain the metal microstructure on the substrate. 54. The metal microstructure forming method according to claim 53, wherein the seed layer is selected from the group consisting of Cr under Au, Ti under·Au, Ti under Cu, Ti-W under Au, and the like. 55. The metal microstructure forming method of claim 53, wherein the deposition technique is selected from the group consisting of evaporation, sputtering, electroless plating, and the like. 46. The method of forming a metal microstructure according to claim 53 wherein the technique of coating the photoresist is selected from the group consisting of spin coating, spray coating, lamination, casting, and the like. 57. The metal microstructure forming method of claim 53, wherein the batch of photoresist is negative. 58. The metal microstructure forming method according to claim 53, wherein the method of selecting the series is directly heated by a heating plate, oven, and infrared scaly, and the exposure method is selected from X-ray lith〇. Gr_y, uv Hthography, direct write e-beam, etc. 59. The metal microstructure forming method according to claim 53, wherein the method of grinding processing is self-organized ((10), mechanical grinding, polishing, etc. 60. If the patent application scope is 54th The metal microstructure forming method, wherein the metal microstructure is selected from Au, Cu, Ni, Ni-this, Ni-Fe all0y, Nl_c〇alloy, Sn-Pb, etc. 47