CN101995766A - Metal microstructure forming method - Google Patents
Metal microstructure forming method Download PDFInfo
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- CN101995766A CN101995766A CN 200910163069 CN200910163069A CN101995766A CN 101995766 A CN101995766 A CN 101995766A CN 200910163069 CN200910163069 CN 200910163069 CN 200910163069 A CN200910163069 A CN 200910163069A CN 101995766 A CN101995766 A CN 101995766A
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Abstract
The invention discloses a metal microstructure forming method which is applied to the manufacturing process of a microstructure component; by utilizing the metal microstructure forming method, a second type of metal is not needed to be electric-plated to surround the periphery of the metal and the second type of metal is not needed to be etched when a three-dimensional metal microstructure of the microstructure component is formed, therefore, the residual stress caused by electric-plating is reduced, no residual stress exists among the metal layers, a base plate attached by the metal is not deformed and the implementing of the follow-up manufacturing process of the microstructure component is not affected; in addition, as the second type of metal is not needed to be etched, the problem that etchants are permeated to the interface at each layer does not exist, adhesive force reduction at each layer can not caused, so as not to affect the functions of the microstructure component.
Description
Technical field
The present invention relates to a kind of microstructure formation method, relate in particular to a kind of metal micro structure formation method, be to be applied to the microstructure elements manufacture process, can reduce residual stress, the metal interlevel that plating causes and not have residual stress, the unlikely distortion of substrate that metal is accompanying, and the unlikely microstructure elements subsequent manufacturing processes that influences is carried out.
Background technology
For present micro-electromechanical technology, though MEMS (micro electro mechanical system) has microminiaturization, batch volume production and advantages such as many high-performance assemblies can be provided, so, its target of pursuing is still, and how to produce the MEMS (micro electro mechanical system) that volume is littler, energy consume is lower and with better function, system is more stable.
Just, for reaching the MEMS (micro electro mechanical system) that system is more stable, fiduciary level is higher, the micromodule on it must possess good 3-dimensional metal microstructure usually, and as microcomputer electric detecting probe fasten (MEMS probecard), this is still problem to be solved.
Invention bulletin/publication number is in 428052 the TaiWan, China patent gazette " the nickel electroforming solution constituent that contains wetting agent of electroforming model manufacture process deeply ", disclosed is that the dialkyl wetting agent of succinic acid sodium sulfonate can make an addition to the nickel electroforming solution in the deep electroforming model manufacture process, not only can keep the low internal stress of nickel electroformed layer, and the wetting power of very effective raising casting liquid, in deep nickel electroforming model manufacture process, current density in the time of effectively promoting the depth-to-width ratio of nickel microstructured bodies and electroforming process simultaneously, so, it is not how to produce the microstructure elements with good metal micro structure for inquiring into.
Invention bulletin/publication number is in " three-dimensional microstructures and forming method thereof " of 200843190 TaiWan, China patent gazette, though the three-dimensional microstructures of touching upon, so, its technical characterictic is the coaxial transmission line that is applied to electromagnetic energy for this three-dimensional microstructures.
Invention bulletin/publication number is in " three-dimensional microstructures and forming method thereof " of 200843191 TaiWan, China patent gazette, the three-dimensional microstructures though touch upon, so, its technical characterictic is that three-dimensional microstructures is built manufacture process formation and comprised the microstructure elements of mechanical interlocking each other through continuous, and this microstructure for example is used in the coaxial transmission line of electromagnetic energy.
Invention bulletin/publication number is during 200829358 TaiWan, China patent gazette " engages by stainless steel; the method for the work package that nickel or nickel alloy are made; the method and the microstructure elements of manufacturing microstructure elements ", the microstructure elements though touch upon, so, its technical characterictic is to lack two by stainless steel about a kind of being adapted to couple to, the method of the work package that nickel or nickel alloy are made, and be used for making to be selected from comprising microreactor, micro-heat exchanger, micro-cooler, and the method for the microstructure elements of the group of micro-mixer, in addition, be about a kind of microstructure elements, as have fluidic structures and comprise by stainless steel, the assembly of the interconnective microstructure elements layer stack that nickel or nickel alloy are made.
The patent No. is US 5,190, in 637 the United States Patent (USP) " Formation Of MicrostructuresBy Multiple Level Deep X-Ray Lithography With Sacrificial Metal Layers ", disclose a kind of metal micro structure assembly manufacture method, its technical characterictic is six key steps, step 1: form a photoresistance at a substrate, via light shield exposure, development, needed pattern is shaped; Step 2: in this pattern, the electroforming major metal; Step 3: remove remaining photoresistance, second kind of metal of re-plating is centered around the major metal periphery, but second kind of metal must have certain etching selectivity with major metal, and for example, major metal is that nickel, second kind of metal are silver or copper; Step 4: attrition process major metal and second kind of metal make its structure height unanimity; Step 5: repeating step 1～4 is up to needed structure height; And step 6: second kind of metal of etching only stays the microstructure elements of major metal.
Yet, above-mentioned US 5,190, the shortcoming of 637 United States Patent (USP) is: need second kind of metal of re-plating 1., when if the shared area of second kind of metal is quite big, the residual stress that must reduce plating as far as possible and caused, otherwise make the base plate deformation that adheres to major metal easily, cause and can't carry out subsequent manufacturing processes; 2. make the every interlayer of major metal that residual stress is arranged; And, make major metal and second kind of intermetallic that higher selection ratio be arranged though 3. adjust etching solution as far as possible,, etching solution still can infiltrate every layer interface, causes every layer adhesion to reduce, and then influences the fiduciary level of microstructure elements.
So how to seek a kind of metal micro structure formation method, when forming the stereo metal microstructure of microstructure elements, need not electroplate second kind of metal to be centered around the major metal periphery, and need not second kind of metal of etching, and can reduce the residual stress that plating causes, metal interlevel does not have residual stress, the unlikely distortion of substrate that metal is accompanying, and the unlikely microstructure elements subsequent manufacturing processes that influences is carried out, and, because need not second kind of metal of etching, thereby, do not have the problem that etching solution infiltrates every layer interface, can not cause every layer adhesion to reduce, and the unlikely function that influences microstructure elements is a problem to be solved.
Summary of the invention
Fundamental purpose of the present invention is to be to provide a kind of metal micro structure formation method, be to be applied to the microstructure elements manufacture process, when forming the stereo metal microstructure of microstructure elements, need not electroplate second kind of metal to be centered around metal periphery and need not second kind of metal of etching.
Another purpose of the present invention is to be to provide a kind of metal micro structure formation method, be to be applied to the microstructure elements manufacture process, when forming the stereo metal microstructure of microstructure elements, owing to need not electroplate second kind of metal to be centered around the metal periphery, thereby, can reduce residual stress, the metal interlevel that plating causes and not have residual stress, the unlikely distortion of substrate that metal is accompanying, and the unlikely microstructure elements subsequent manufacturing processes that influences is carried out.
A further object of the present invention is to be to provide a kind of metal micro structure formation method, be to be applied to the microstructure elements manufacture process, when forming the stereo metal microstructure of microstructure elements, because need not second kind of metal of etching, thereby, do not have the problem that etching solution infiltrates every layer interface, can not cause every layer adhesion to reduce, and the unlikely function that influences microstructure elements.
According to above-described purpose, the step that metal micro structure formation method of the present invention comprises is at first, to prepare a substrate, so that carry out follow-up metal micro structure formation on this substrate; Then, in the metal micro structure that forms in succession on the surface of this substrate more than two layers, at this, each layer metal micro structure is made up of a kind of material, and this metal micro structure more than two layers can be formed by same material and/or by different materials; Then, remove other material beyond this metal micro structure more than two layers with liquid or reactive ion etching, at this, this liquid or reactive ion etching can this metal micro structures more than two layers of etching; At last, on substrate, obtain the good metal microstructure.
Description of drawings
Fig. 1 is a process flow diagram, in order to the process step of explicit declaration metal micro structure of the present invention formation method;
Fig. 2 is a process flow diagram, in order to the detailed process step of the step of one substrate of the preparation among explicit declaration Fig. 1;
Fig. 3 is a process flow diagram, in order among explicit declaration Fig. 1 in the detailed process step of the step that forms the metal micro structure more than two layers on the surface of this substrate in succession;
Fig. 4 is a process flow diagram, in order to remove the detailed process step of the step of other material beyond this metal micro structure more than two layers with liquid among explicit declaration Fig. 1;
Fig. 5 is a process flow diagram, utilizes the process step of an embodiment of metal micro structure method of the present invention in order to explicit declaration;
Fig. 6-a to Fig. 6-n is a synoptic diagram, in order to the manufacture process situation of this embodiment process step that utilizes metal micro structure method of the present invention among explicit declaration Fig. 5;
Fig. 7 is a process flow diagram, utilizes the process step of another embodiment of metal micro structure method of the present invention in order to explicit declaration;
Fig. 8-a to Fig. 8-j is a synoptic diagram, in order to the manufacture process situation of this embodiment process step that utilizes metal micro structure method of the present invention among explicit declaration Fig. 7;
Fig. 9 is a process flow diagram, utilizes the process step of an embodiment again of metal micro structure method of the present invention in order to explicit declaration;
Figure 10-a to Figure 10-m is a synoptic diagram, in order to the manufacture process situation of this embodiment process step that utilizes metal micro structure method of the present invention among explicit declaration Fig. 9;
Figure 11 is a process flow diagram, utilizes the process step of another embodiment of metal micro structure method of the present invention in order to explicit declaration; And
Figure 12-a to Figure 12-k figure is a synoptic diagram, in order to the manufacture process situation of this embodiment process step that utilizes metal micro structure method of the present invention among explicit declaration Figure 11.
Embodiment
Those skilled in the art below cooperate Figure of description that embodiments of the present invention are done more detailed description, so that can implement after studying this instructions carefully according to this.
Fig. 1 is a process flow diagram, in order to the process step of explicit declaration metal micro structure of the present invention formation method.As shown in fig. 1 be metal micro structure formation method of the present invention, at first,, prepare a substrate in step 11 form so that carry out follow-up metal micro structure on this substrate, and enter step 12.
In step 12, in the metal micro structure that forms in succession on the surface of this substrate more than two layers, at this, each layer metal micro structure is made up of a kind of material, and this metal micro structure more than two layers can be formed by same material and/or by different materials, and enters step 13.
In step 13, remove other material beyond this metal micro structure more than two layers with liquid or reactive ion etching, at this, this liquid or reactive ion etching can this metal micro structures more than two layers of etching, and enter step 14.
In step 14, on substrate, obtain the good metal microstructure.
Fig. 2 is a process flow diagram, in order to the detailed process step of the step of one substrate of the preparation among explicit declaration Fig. 1.As shown in Figure 2, at first, in step 111, choose a substrate, this substrate is for choosing from silicon substrate, glass substrate, ceramic substrate etc., and enters step 12; Or, in step 111, choose a substrate, this substrate enters step 112 for choosing after silicon substrate, glass substrate, ceramic substrate etc.
In step 112, on this substrate, deposit Seed Layer (seed layer), at this, this Seed Layer is for electroplating initial layers, need good electrical conductivity and and substrate between tack, general optional Cr/Au (Cr under Au), Ti/Au (Ti under Au), Ti/Cu (Ti under Cu) or the Ti-W/Au (Ti-W under Au) of taking from, with Cr/Au or Ti/Au is example, the about 100-200A of Cr, the about 1000-2000A of Au, in addition, the technology of deposition is chosen from evaporation (evaporation), sputter (Sputtering), electroless plating (electroless) etc.; After step 112 is finished, and enter step 12.
Fig. 3 is a process flow diagram, in order among explicit declaration Fig. 1 in the detailed process step of the step that forms the metal micro structure more than two layers on the surface of this substrate in succession.As shown in Figure 3, at first, in step 121, on this substrate, criticize and cover photoresistance and/or hard waxes and/or high molecular polymer, look closely the actual embodiment situation and decide, at this, batch covering photoresistance can adopt suitable technology according to the photoresistance characteristic, spin coating, spray coating, lamination, casting etc. are arranged, photoresistance can be eurymeric, as Clariant AZ4620, TOK LA900, PMMA, and photoresistance can be minus, as JSR THB-126N, MicroChem SU-8, epoxy-base photoresist/Su-8 etc.; After step 121 is finished, and enter step 122.
In step 122, carry out the photoresistance baking, photoresistance is after baking, wherein solvent evaporation makes the photoresistance hardening, expose afterwards, develop, with the required micro structured pattern (pattern) that is shaped, wherein, baking method has heating plate directly to heat (direct backing by hot plate), baking oven (Oven) or infrared ray heating (IR backing) etc., and Exposure mode has X-ray lithography, UV lithography, direct write e-beam etc.; After step 122 is finished, and enter step 123.
In step 123, in the micro structured pattern pothole, electroplate required metal construction, optional Au, Cu, Ni, Ni-Mn alloy, Ni-Fe alloy, Ni-Co alloy, the Sn-Pb etc. of taking from of metal of general electrodepositable; At this, before electroplating, can in the micro structured pattern pothole, deposit Seed Layer earlier, this Seed Layer is for electroplating initial layers, need good electrical conductivity and and photoresistance and plated metal between tack, the general optional Cr under Au that takes from, Ti under Au, Ti under Cu or Ti-Wunder Au etc., with Cr/Au or Ti/Au is example, Cr is about 100-200A, and Au is about 1000-2000A, and deposition technique is chosen from evaporation, sputter, electroless plating etc. in addition; Or, before electroplating, need not deposit Seed Layer earlier, look closely the actual embodiment situation and decide; After step 123 is finished, and enter step 124.
In step 124, carry out attrition process, attrition process will make photoresistance thickness and plated metal consistency of thickness, wherein, the attrition process mode is chosen from chemical machine processing (Chemical mechanicalpolishing, CMP), mechanical lapping (mechanical lapping), polishing (polishing) etc., and enter step 125.
In step 125, repeating step 121 is to step 124, is used to form on the surface of this substrate the metal micro structure more than two layers.
Fig. 4 is a process flow diagram, in order to remove the detailed process step of the step of other material beyond this metal micro structure more than two layers with liquid or reactive ion etching among explicit declaration Fig. 1.As shown in Figure 4,, remove photoresistance and/or hard waxes and/or high molecular polymer, in order to disengaging three-dimensional metal micro structure, and enter step 132 with solvent or reactive ion etching in step 131; Or, after disengaging three-dimensional metal micro structure, and enter rapid 14.
In step 132, remove Seed Layer with etching solution, and enter step 14.
Fig. 5 is a process flow diagram, utilizes the process step of an embodiment of metal micro structure method of the present invention in order to explicit declaration.Synoptic diagram as shown in Figure 5 and that see also Fig. 6-a to Fig. 6-n at first, in step 21, is chosen a substrate 200, and this substrate 1 is for choosing from silicon substrate, glass substrate, ceramic substrate etc.; Deposition first Seed Layer 201 is criticized and is covered ground floor photoresistance 202 on this substrate 1, at this, this first Seed Layer 201 is for electroplating initial layers, need good electrical conductivity and and substrate between tack, the general optional Cr under Au that takes from, Ti under Au, Ti under Cuor Ti-W under Au, with Cr/Au or Ti/Au is example, the about 100-200A of Cr, the about 1000-2000A of Au, in addition, the technology of deposition is chosen from evaporation (evaporation), sputter (Sputtering), electroless plating (electroless) etc., and present embodiment is example with the sputter; Criticizing the photoresistance that covers can adopt suitable technology to choose from spin coating, spray coating, lamination, casting etc. according to the photoresistance characteristic; Photoresistance can be eurymeric, as Clariant AZ4620, TOK LA900, PMMA, and, photoresistance can be minus such as JSR THB-126N, MicroChem SU-8 etc., can select suitable photoresistance according to product performance, follow-uply must carry out the attrition process manufacture process because of of the present invention, thereby, in present embodiment, adopt the higher epoxy-base photoresist/Su-8 of structural strength and cover photoresistance with next batch of rotary coating (spin coating), launch to help subsequent manufacturing processes, the manufacture process of step 21 and enters step 22 as shown in Fig. 6-a.
In step 22, ground floor photoresistance 202 is toasted, after baking, wherein solvent evaporation makes 202 hardening of ground floor photoresistance, expose afterwards, develop, at this, exposure, the employed light shield that develops are 203 ground floor photoresistance microstructures 204 to be shaped required; Wherein, baking method has directly heating of heating plate, baking oven or infrared ray heating etc., and Exposure mode has X-ray lithography, UV lithography, direct write e-beam etc.; Present embodiment is an example with hot plate backing/UVexposure, and the manufacture process of step 22 after step 22 is finished, and enters step 23 as shown in Fig. 6-b.
In step 23, in ground floor photoresistance microstructure 204 pattern potholes, electroplate required metal 205 structures, metal 205 optional Au, Cu, Ni, Ni-Mn alloy, Ni-Fealloy, Ni-Co alloy, the Sn-Pb etc. of taking from of general electrodepositable, the manufacture process of step 23 and enters step 24 as shown in Fig. 6-c.
In step 24, carry out attrition process obtaining ground floor metal micro structure 206, attrition process will make ground floor photoresistance 202 and plated metal 205 consistency of thickness, wherein, the attrition process mode is chosen from chemical machine processing (CMP), mechanical lapping, polishing etc.; In addition, photoresistance should adopt the epoxy-base photoresist such as the MicroChem Su-8 of tool high mechanical properties, and the manufacture process of step 24 and enters step 25 as shown in Fig. 6-d.
In step 25, the photoresistance in the repeating step 21 is criticized and is covered action, carries out photoresistance once more and criticizes and cover, and with shaping second layer photoresistance 207, the manufacture process of step 25 and enters step 26 as shown in Fig. 6-e.
In step 26, carry out second layer photoresistance 207 baking, exposure, develop, with second layer photoresistance microstructure 208 patterns that are shaped required,, use light shield 213 at this, the manufacture process of step 26 and enters step 27 as shown in Fig. 6-f.
In step 27, deposit second Seed Layer 209, this second Seed Layer 209 is for electroplating initial layers, need good electrical conductivity and and photoresistance and plated metal between tack, the general optional Crunder Au that takes from, Ti under Au, Ti under Cu or Ti-W under Au, with Cr/Au or Ti/Au is example, the about 100-200A of Cr, the about 1000-2000A of Au, in addition, deposition technique is chosen from evaporation, sputter, electroless plating etc., and present embodiment is example with the sputter; At this, second layer photoresistance microstructure 208 is wide and big than ground floor photoresistance microstructure 204, is coated in the second layer metal microstructure 211, therefore for avoiding pore, in this first deposition second Seed Layer 209, the manufacture process of step 27 as shown in Fig. 6-g and enter step 28.
In step 28, in second layer photoresistance microstructure 208 pattern potholes, electroplate required metal 210 structures, metal 210 optional Au, Cu, Ni, Ni-Mn alloy, Ni-Fealloy, Ni-Co alloy, the Sn-Pb etc. of taking from of general electrodepositable, the manufacture process of step 28 as shown in Fig. 6-h and enter step 29.
In step 29, carry out attrition process obtaining second layer metal microstructure 211, attrition process will make second layer photoresistance 207 and plated metal 210 consistency of thickness, wherein, the attrition process mode is chosen from chemical machine processing (CMP), mechanical lapping, polishing etc.; In addition, photoresistance should adopt the epoxy-base photoresist such as the MicroChem Su-8 of tool high mechanical properties, the manufacture process of step 29 as shown in Fig. 6-i and enter step 30.
In step 30, carry out the 3rd layer of 212 batches of photoresistance and cover, with the 3rd layer of photoresistance 212 that be shaped, the manufacture process of step 30 as shown in Fig. 6-j and enter step 31.
In step 31, carry out baking, exposure, the development of the 3rd layer of photoresistance 212, with the 3rd layer of required photoresistance microstructure 215 that be shaped,, use light shield 214 at this, the manufacture process of step 31 as shown in Fig. 6-j and enter step 32.
In step 32, in the 3rd layer of photoresistance microstructure 215 pattern pothole, electroplate required metal 216 structures, metal 216 optional Au, Cu, Ni, Ni-Mn alloy, Ni-Fealloy, Ni-Co alloy, the Sn-Pb etc. of taking from of general electrodepositable, the manufacture process of step 32 as shown in Fig. 6-k and enter step 33.
In step 33, carry out attrition process obtaining three-layer metal microstructure 217, attrition process will make the 3rd layer of photoresistance 212 and plated metal 216 consistency of thickness, wherein, the attrition process mode is chosen from chemical machine processing (CMP), mechanical lapping, polishing etc.; In addition, photoresistance should adopt the epoxy-base photoresist such as the MicroChem Su-8 of tool high mechanical properties, the manufacture process of step 33 as shown in Fig. 6-1 and enter step 34.
In step 34, remove ground floor photoresistance microstructure 204, second layer photoresistance microstructure 208 and the 3rd layer of photoresistance microstructure 215 with solvent or reactive ion etching (not shown go out), in order to disengage the metal micro structure 218 of the solid that comprises ground floor metal micro structure 206, second layer metal microstructure 211 and three-layer metal microstructure 217, the manufacture process of step 34 and enters step 35 as shown in Fig. 6-m.
In step 35, remove not first Seed Layer that covered by ground floor metal micro structure 204, second layer metal microstructure 208 and three-layer metal microstructure 215 partly 219 with etching solution (not shown go out), to obtain good metal microstructure 218 on substrate, the manufacture process of step 35 is as shown in Fig. 6-n.
Fig. 6-a to Fig. 6-n is a synoptic diagram, in order to the manufacture process situation of this embodiment process step that utilizes metal micro structure method of the present invention among explicit declaration Fig. 5.
Fig. 7 is a process flow diagram, utilizes the process step of another embodiment of metal micro structure method of the present invention in order to explicit declaration.As shown in Figure 7, at first, in step 41, choose a substrate 300, this substrate is for choosing from silicon substrate, glass substrate, ceramic substrate etc.; Deposition first Seed Layer 301 is criticized and is covered ground floor photoresistance 302 on this substrate, at this, this first Seed Layer 301 is for electroplating initial layers, need good electrical conductivity and and the tack of 300 of substrates, the general optional Crunder Au that takes from, Ti under Au, Ti under Cu or Ti-W under Au, with Cr/Au or Ti/Au is example, the about 100-200A of Cr, the about 1000-2000A of Au, in addition, the technology of deposition is chosen from evaporation (evaporation), sputter (Sputtering), electroless plating (electroless) etc., and present embodiment is example with the sputter; Criticizing the photoresistance that covers can adopt suitable technology to choose from spin coating, spray coating, lamination, casting etc. according to the photoresistance characteristic; Photoresistance can be eurymeric, as Clariant AZ4620, TOK LA900, PMMA, and, photoresistance can be minus such as JSR THB-126N, MicroChemSU-8 etc., can select suitable photoresistance according to product performance, follow-uply must carry out the attrition process manufacture process because of of the present invention, thereby, in present embodiment, adopt the higher epoxy-basephotoresist/Su-8 of structural strength and cover photoresistance with next batch of rotary coating (spin coating), launch to help subsequent manufacturing processes, the manufacture process of step 41 and enters step 42 as shown in Fig. 8-a.
In step 42, carry out the baking of ground floor photoresistance 302, after baking, will be wherein solvent evaporation make 302 hardening of ground floor photoresistance, after expose, develop, at this, use light shield 303 is with ground floor photoresistance microstructure 304 patterns that are shaped required; Wherein, baking method has directly heating of heating plate, baking oven or infrared ray heating etc., and Exposure mode has X-ray lithography, UVlithography, direct write e-beam etc.; Present embodiment is an example with hot plate backing/UVexposure, and the manufacture process of step 42 after step 42 is finished, and enters step 43 as shown in Fig. 8-b.
In step 43, in the first photoresist layer microstructure, 304 pattern potholes, electroplate required metal 305 structures, metal 305 optional Au, Cu, Ni, Ni-Mn alloy, Ni-Fealloy, Ni-Co alloy, the Sn-Pb etc. of taking from of general electrodepositable, the manufacture process of step 43 and enters step 44 as shown in Fig. 8-c.
In step 44, carry out attrition process obtaining ground floor metal micro structure 306, attrition process will make ground floor photoresistance thickness 302 and plated metal 305 consistency of thickness, wherein, the attrition process mode is chosen from chemical machine processing (CMP), mechanical lapping, polishing etc.; In addition, photoresistance should adopt the epoxy-base photoresist such as the MicroChem Su-8 of tool high mechanical properties, and the manufacture process of step 44 and enters step 45 as shown in Fig. 8-d.
In step 45, carry out 307 batches of second layer photoresistances and cover, with shaping second layer photoresistance 307, the manufacture process of step 45 and enters step 46 as shown in Fig. 8-e.
In step 46, carry out baking, exposure, the development of second layer photoresistance 307, with the second layer photoresistance microstructure 308 that is shaped required,, use light shield 313 at this, the manufacture process of step 46 and enters step 47 as shown in Fig. 8-f.
In step 47, in second layer photoresistance micro structured pattern 308 potholes, electroplate required metal 310 structures, metal 310 optional Au, Cu, Ni, Ni-Mn alloy, Ni-Fealloy, Ni-Co alloy, the Sn-Pb etc. of taking from of general electrodepositable, the manufacture process of step 47 and enters step 48 as shown in Fig. 8-g.
In step 48, carry out attrition process obtaining second layer metal microstructure 311, attrition process will make second layer photoresistance 307 thickness and plated metal 310 consistency of thickness, wherein, the attrition process mode is chosen from chemical machine processing (CMP), mechanical lapping, polishing etc.; In addition, photoresistance should adopt the epoxy-base photoresist such as the MicroChem Su-8 of tool high mechanical properties, and the manufacture process of step 48 and enters step 49 as shown in Fig. 8-h.
In step 49, remove ground floor photoresistance microstructure 304 and second layer photoresistance microstructure 308 with solvent or reactive ion etching (not shown go out), in order to disengage the metal micro structure 318 of the solid that comprises ground floor metal micro structure 306 and second layer metal microstructure 311, the manufacture process of step 49 and enters step 50 as shown in Fig. 8-i.
In step 50, remove not partly 319 (as shown in Fig. 8-i) of first Seed Layer that covered by ground floor metal micro structure 306 and second layer metal microstructure 311 with etching solution (not shown go out), to obtain good metal microstructure 318 on substrate, the manufacture process of step 50 is as shown in Fig. 8-j.
Fig. 8-a to Fig. 8-j is a synoptic diagram, in order to the manufacture process situation of this embodiment process step that utilizes metal micro structure method of the present invention among explicit declaration Fig. 7.
Fig. 9 is a process flow diagram, utilizes the process step of an embodiment again of metal micro structure method of the present invention in order to explicit declaration.As shown in Figure 9, at first, in step 61, choose a substrate 400, this substrate 400 is for choosing from silicon substrate, glass substrate, ceramic substrate etc.; Deposition first Seed Layer 401 is criticized and is covered ground floor photoresistance 402 on this substrate 400, at this, this first Seed Layer 401 is for electroplating initial layers, need good electrical conductivity and and the tack of 400 of substrates, the general optional Cr under Au that takes from, Ti under Au, Ti under Cu or Ti-W under Au, with Cr/Au or Ti/Au is example, the about 100-200A of Cr, the about 1000-2000A of Au, in addition, the technology of deposition is chosen from evaporation (evaporation), sputter (Sputtering), electroless plating (electroless) etc., and present embodiment is example with the sputter; Criticizing the photoresistance that covers can adopt suitable technology to choose from spin coating, spray coating, lamination, casting etc. according to the photoresistance characteristic; Photoresistance can be eurymeric, as Clariant AZ4620, TOK LA900, PMMA, and, photoresistance can be minus such as JSRTHB-126N, MicroChem SU-8 etc., can select suitable photoresistance according to product performance, follow-uply must carry out the attrition process manufacture process because of of the present invention, thereby, in present embodiment, adopt the higher epoxy-base photoresist/Su-8 of structural strength and cover photoresistance with next batch of rotary coating (spin coating), launch to help subsequent manufacturing processes, the manufacture process of step 61 and enters step 62 as shown in Figure 10-a.
In step 62, carry out the baking of ground floor photoresistance 402, after baking, wherein solvent evaporation makes 402 hardening of ground floor photoresistance, exposes afterwards, develops, and with ground floor photoresistance microstructure 404 patterns that are shaped required, at this, uses light shield 403; Wherein, baking method has directly heating of heating plate, baking oven or infrared ray heating etc., and Exposure mode has X-ray lithography, UVlithography, direct write e-beam etc.; Present embodiment is an example with hot plate backing/UVexposure, and the manufacture process of step 62 after step 62 is finished, and enters step 63 as shown in Figure 10-6.
In step 63, in ground floor photoresistance microstructure 404 pattern potholes, electroplate required metal 405 structures, metal 405 optional Au, Cu, Ni, Ni-Mn alloy, Ni-Fealloy, Ni-Co alloy, the Sn-Pb etc. of taking from of general electrodepositable, the manufacture process of step 63 and enters step 64 as shown in Figure 10-c.
In step 64, remove this ground floor photoresistance 402, the manufacture process of step 64 and enters step 65 as shown in Figure 10-d.
In step 65, apply diffluent hard waxes or high molecular polymer to form first hard layer 407, these first hard layer, 407 materials can bear the mechanical force of attrition process, but the time can improve the restriction that photoresistance is selected again, the manufacture process of step 65 and enters step 66 as shown in Figure 10-e.
In step 66, carry out attrition process to obtain ground floor metal micro structure 406, attrition process will make coated first hard layer 407 and plated metal 405 consistency of thickness, wherein, the attrition process mode is chosen from chemical machine processing (CMP), mechanical lapping, polishing etc., the manufacture process of step 66 and enters step 67 as shown in Figure 10-f.
In step 67, carry out 408 batches of second layer photoresistances and cover, with shaping second layer photoresistance 408, the manufacture process of step 67 and enters step 68 as shown in Figure 10-g.
In step 68, carry out baking, exposure, the development of second layer photoresistance 408, with the second layer photoresistance microstructure 409 that is shaped required,, use light shield 410 at this, the manufacture process of step 68 and enters step 69 as shown in Figure 10-h.
In step 69, in second layer photoresistance microstructure 409 pattern potholes, electroplate required metal 411 structures, metal 411 optional Au, Cu, Ni, Ni-Mn alloy, Ni-Fealloy, Ni-Co alloy, the Sn-Pb etc. of taking from of general electrodepositable, the manufacture process of step 69 and enters step 70 as shown in Figure 10-i.
In step 70, remove this second layer photoresistance 408, the manufacture process of step 70 and enters step 71 as shown in Figure 10-j.
In step 71, apply diffluent hard waxes or high molecular polymer to form second hard layer 412, these second hard layer, 412 materials can bear the mechanical force of attrition process, but the time can improve the restriction that photoresistance is selected again, the manufacture process of step 71 and enters step 72 as shown in Figure 10-k.
In step 72, carry out attrition process to obtain second layer metal microstructure 413, attrition process will make coated second hard layer 412 and plated metal 411 consistency of thickness, wherein, the attrition process mode is chosen from chemical machine processing (CMP), mechanical lapping, polishing etc., the manufacture process of step 72 and enters step 73 as shown in Figure 10-1.
In step 73, remove first hard layer 407 and second hard layer 412 with solvent or reactive ion etching (not shown go out), in order to disengage the metal micro structure 414 of the solid that comprises ground floor metal micro structure 406 and second layer metal microstructure 413; And, remove not first Seed Layer that covered by ground floor metal micro structure 406 and second layer metal microstructure 413 partly (not shown go out) with etching solution (not shown go out), to obtain good metal microstructure 414 on substrate, the manufacture process of step 73 is as shown in Figure 10-m.
Figure 10-a to Figure 10-m is a synoptic diagram, in order to the manufacture process situation of this embodiment process step that utilizes metal micro structure method of the present invention among explicit declaration Fig. 9.
Figure 11 is a process flow diagram, utilizes the process step of another embodiment of metal micro structure method of the present invention in order to explicit declaration.As shown in Figure 11, at first, in step 81, choose a substrate 500 and criticize on this substrate 500 and cover ground floor photoresistance 501, this substrate 500 is for choosing from silicon substrate, glass substrate, ceramic substrate etc.; Criticizing coating technique can adopt suitable technology to choose from spin coating, spray coating, lamination, casting etc. according to the photoresistance characteristic; Photoresistance can be eurymeric such as ClariantAZ4620, TOK LA900, PMMA, and, photoresistance can be minus such as epoxy-basephotoresist/Su-8, JSR THB-126N, MicroChem SU-8 etc., can select suitable photoresistance according to product performance, because of carrying out the attrition process manufacture process in the follow-up of present embodiment, thereby, the higher epoxy-base photoresist/Su-8 of present embodiment employing structural strength criticizes in the rotary coating mode and covers photoresistance, so, favourable subsequent manufacturing processes is launched, the manufacture process of step 81 and enters step 82 as shown in 12-a figure.
In step 82, carry out the baking of ground floor photoresistance 501, after baking, wherein solvent evaporation makes 501 hardening of ground floor photoresistance, wherein, baking method has directly heating of heating plate, baking oven or infrared ray heating etc., at this, use light shield 502, present embodiment directly is heated to be example with heating plate, the manufacture process of step 82 and enters step 83 as shown in Figure 12-b.
In step 83, carry out 503 batches of second layer photoresistances and cover, after batch covering second layer photoresistance 503, to toast again, the manufacture process of step 83 and enters step 84 as shown in Figure 12-c.
In step 84, carry out the exposure of second layer photoresistance, Exposure mode has X-ray lithography, UV lithography, direct write e-beam etc., at this, uses light shield 504; Present embodiment is an example with UV exposure, and after step 84 was finished, the manufacture process of step 84 and entered step 85 as shown in Figure 12-d.
In step 85, after this ground floor photoresistance 501 and second layer photoresistance 502 developed, in order to ground floor photoresistance microstructure 505 patterns and second layer photoresistance microstructure 506 patterns that are shaped required; Maximum different being of embodiment among present embodiment and Fig. 5, can select the eurymeric or the minus photoresistance (Chemical amplified positive/negativephotoresist) of high-resolution chemical amplifying type, this type of photoresistance has repeatedly to criticize and covers photoresistance → baking → exposure, be the characteristic of once developing afterwards, as MicroChem Su-8, thereby the embodiment in Fig. 5, present embodiment can reduce some and make flow processs; After step 85 was finished, the manufacture process of step 85 and entered step 86 as shown in Figure 12-e.
In step 86, deposition Seed Layer 507, this Seed Layer 507 be for electroplating initial layers, need good electrical conductivity and and photoresistance and plated metal between tack, the general optional Cr underAu that takes from, Ti under Au, Ti under Cu or Ti-W under Au is an example with Cr/Au or Ti/Au, the about 100-200A of Cr, the about 1000-2000A of Au, the manufacture process of step 86 and enters step 87 as shown in Figure 12-f.
In step 87, in ground floor photoresistance microstructure 505 patterns and second layer photoresistance microstructure 506 pattern potholes, electroplate required metal 508 structures, metal 508 optional Au, Cu, Ni, Ni-Mn alloy, Ni-Fe alloy, Ni-Co alloy, the Sn-Pb etc. of taking from of general electrodepositable, the manufacture process of step 87 and enters step 88 as shown in Figure 12-g.
In step 88, carry out attrition process to obtain ground floor metal micro structure 509, attrition process will make gross thickness and plated metal 508 consistency of thickness of ground floor photoresistance 501 and second layer photoresistance 502, and wherein, the attrition process mode is chosen from chemical machine and processed (CMP), mechanical lapping, polishing etc.; In addition, photoresistance should adopt the epoxy-base photoresist such as the MicroChemSu-8 of tool high mechanical properties, and the manufacture process of step 88 and enters step 89 as shown in Figure 12-h.
In step 89, criticize again cover the 3rd layer of photoresistance 510 after, toast, the 3rd layer of photoresistance 510 is after baking again, and wherein solvent evaporation makes the 3rd layer of photoresistance 510 hardening, expose afterwards, develop, at this, use light shield 511, with the 3rd layer of required photoresistance microstructure 512 pattern that are shaped, the manufacture process of step 89 and enters step 90 as shown in Figure 12-i.
In step 90, in the 3rd layer of photoresistance microstructure 512 pattern pothole, electroplate required metal 513 structures, metal 513 optional Au, Cu, Ni, Ni-Mn alloy, Ni-Fealloy, Ni-Co alloy, the Sn-Pb etc. of taking from of general electrodepositable; Carry out attrition process obtaining second layer metal microstructure 514, attrition process will make the 3rd layer of photoresistance 510 thickness and plated metal 513 consistency of thickness, and wherein, the attrition process mode is chosen from chemical machine processing (CMP), mechanical lapping, polishing etc.; In addition, photoresistance should adopt the epoxy-base photoresist such as the MicroChem Su-8 of tool high mechanical properties, and the manufacture process of step 90 and enters step 91 as shown in Figure 12-j.
In step 91, the manufacture process of step 91 is as shown in Figure 12-k, remove ground floor photoresistance microstructure 505, second layer photoresistance microstructure 506 and the 3rd layer of photoresistance microstructure 512 with solvent or reactive ion etching (not shown go out), in order to disengage the metal micro structure 515 of the solid that comprises ground floor metal micro structure 509 and second layer metal microstructure 514, on substrate, to obtain good metal microstructure 515.
Figure 12-a to Figure 12-k is a synoptic diagram, in order to the manufacture process situation of this embodiment process step that utilizes metal micro structure method of the present invention among explicit declaration Figure 11.
Comprehensive above embodiment, we can obtain a kind of metal micro structure formation method of the present invention, be to be applied to the microstructure elements manufacture process, utilize metal micro structure formation method of the present invention, when the metal micro structure of the solid that forms microstructure elements, need not electroplate second kind of metal to be centered around the metal periphery, and need not second kind of metal of etching, and can reduce the residual stress that plating causes, metal interlevel does not have residual stress, the unlikely distortion of substrate that metal is accompanying, and the unlikely microstructure elements subsequent manufacturing processes that influences is carried out, and, because need not second kind of metal of etching, thereby, do not have the problem that etching solution infiltrates every layer interface, can not cause every layer adhesion to reduce, and the unlikely function that influences microstructure elements.Metal micro structure formation method of the present invention comprises following advantage:
When forming the stereo metal microstructure of microstructure elements, need not electroplate second kind of metal to be centered around metal periphery and need not second kind of metal of etching.
When forming the stereo metal microstructure of microstructure elements, owing to need not electroplate second kind of metal to be centered around the metal periphery, thereby, can reduce residual stress, the metal interlevel that plating causes and not have residual stress, the unlikely distortion of substrate that metal is accompanying, and the unlikely microstructure elements subsequent manufacturing processes that influences is carried out.
When forming the stereo metal microstructure of microstructure elements, because need not second kind of metal of etching, thereby, do not have the problem that etching solution infiltrates every layer interface, can not cause every layer adhesion to reduce, and the unlikely function that influences microstructure elements.
The above only is in order to explain preferred embodiment of the present invention; be not that attempt is done any pro forma restriction to the present invention according to this; therefore, all have in that identical creation spirit is following do relevant any modification of the present invention or change, all must be included in the category that the invention is intended to protect.
Claims (60)
1. a metal micro structure formation method is applied to the microstructure elements manufacture process, it is characterized in that, this metal micro structure formation method comprises following steps:
Prepare a substrate;
In the metal micro structure that forms in succession on the surface of this substrate more than two layers;
Remove this metal micro structure more than two layers other material in addition, this metal micro structure more than two layers of this liquid that can not etching with liquid; And
On this substrate, obtain metal micro structure.
2. metal micro structure formation method as claimed in claim 1 is characterized in that, this step of preparing a substrate comprises following steps:
Choose a substrate; And
On this substrate, deposit Seed Layer, the tack between this Seed Layer tool electric conductivity and tool and this substrate, optional Cr under Au, Ti under Au, Ti under Cu, the Ti-W underAu of taking from.
3. metal micro structure formation method as claimed in claim 1 is characterized in that, should comprise following steps in the step that forms the metal micro structure more than two layers on the surface of this substrate in succession:
Criticize and cover photoresistance and/or hard waxes and/or high molecular polymer;
Criticize this photoresistance that covers is toasted, and this photoresistance is after baking, and wherein solvent evaporation makes this photoresistance hardening, exposes afterwards, develops, to be shaped required micro structured pattern;
In this micro structured pattern pothole, electroplate required metal construction;
Carry out attrition process, attrition process will make this photoresistance and plated metal consistency of thickness;
And
Choose and utilize above step, in the metal micro structure that forms on the surface of this substrate more than two layers.
4. metal micro structure formation method as claimed in claim 3, it is characterized in that, in this electroplates required metal construction in this micro structured pattern pothole before, in this micro structured pattern pothole, deposit a Seed Layer earlier, this Seed Layer tool electric conductivity and tool and this photoresistance and electroplate tack between this required metal construction, optional Cr under Au, Ti under Au, Ti under Cu, the Ti-W under Au etc. of taking from.
5. metal micro structure formation method as claimed in claim 1 is characterized in that, this liquid is solvent, and in order to remove photoresistance and/or hard waxes and/or high molecular polymer, this solvent can this metal micro structure more than two layers of etching.
6. metal micro structure formation method as claimed in claim 2, it is characterized in that, this liquid comprises solvent and etching solution, this solvent is in order to remove photoresistance and/or hard waxes and/or high molecular polymer, this solvent can this metal micro structure more than two layers of etching, and, remove this Seed Layer with this etching solution.
7. metal micro structure formation method as claimed in claim 1 or 2 is characterized in that,, this substrate is to choose from silicon substrate, glass substrate or ceramic substrate.
8. metal micro structure formation method as claimed in claim 2 is characterized in that the technology of this deposition is chosen from evaporation, sputter or electroless plating techniques.
9. metal micro structure formation method as claimed in claim 3 is characterized in that, the technology that this batch covered photoresistance is chosen from spin coating, spray coating, lamination or casting.
10. metal micro structure formation method as claimed in claim 3 is characterized in that, it is eurymeric that this batch covered photoresistance.
11. metal micro structure formation method as claimed in claim 3 is characterized in that, it is minus that this batch covered photoresistance.
12. metal micro structure formation method as claimed in claim 3, it is characterized in that, the mode of this baking is chosen from directly heating of heating plate, baking oven or infrared ray heating, and the mode of this exposure is chosen from X-ray lithography, UV lithography or direct write e-beam.
13. metal micro structure formation method as claimed in claim 3 is characterized in that, the mode of this attrition process is chosen from chemical machine processing, mechanical lapping or polishing.
14., it is characterized in that this metal micro structure more than two layers is chosen from Au, Cu, Ni, Ni-Mn alloy, Ni-Fe alloy, Ni-Co alloy or Sn-Pb as claim 1 or 2 or 3 described metal micro structure formation methods.
15. a metal micro structure formation method for being applied to the microstructure elements manufacture process, is characterized in that, this metal micro structure formation method comprises following steps:
Prepare a substrate;
In the metal micro structure that forms in succession on the surface of this substrate more than two layers;
Remove other material beyond this metal micro structure more than two layers with reactive ion etching, and can this metal micro structure more than two layers of etching; And
On this substrate, obtain metal micro structure.
16. metal micro structure formation method as claimed in claim 15 is characterized in that, this step of preparing a substrate comprises following steps:
Choose a substrate; And
On this substrate, deposit Seed Layer, the tack between this Seed Layer tool electric conductivity and tool and this substrate, optional Cr under Au, Ti under Au, Ti under Cu or the Ti-W underAu of taking from.
17. metal micro structure formation method as claimed in claim 15 is characterized in that, should comprise following steps in the step that forms the metal micro structure more than two layers on the surface of this substrate in succession:
Criticize and cover photoresistance and/or hard waxes and/or high molecular polymer;
Criticize this photoresistance that covers is toasted, and this photoresistance is after baking, and wherein solvent evaporation makes this photoresistance hardening, exposes afterwards, develops, to be shaped required micro structured pattern;
In this micro structured pattern pothole, electroplate required metal construction;
Carry out attrition process, attrition process will make this photoresistance and plated metal consistency of thickness;
And
Choose and utilize above step, in the metal micro structure that forms on the surface of this substrate more than two layers.
18. metal micro structure formation method as claimed in claim 17, it is characterized in that, in this electroplates required metal construction in this micro structured pattern pothole before, in this micro structured pattern pothole, deposit a Seed Layer earlier, this Seed Layer tool electric conductivity and tool and this photoresistance and electroplate tack between this required metal construction, optional Cr under Au, Ti under Au, Ti under Cu or the Ti-W under Au of taking from.
19. metal micro structure formation method as claimed in claim 15 is characterized in that, this reactive ion etching is in order to remove photoresistance and/or hard waxes and/or high molecular polymer, and this reactive ion etching can this metal micro structure more than two layers of etching.
20. metal micro structure formation method as claimed in claim 16 is characterized in that, this reactive ion etching is in order to removal photoresistance and/or hard waxes and/or high molecular polymer, and the use etching solution removes this Seed Layer.
21., it is characterized in that this substrate is chosen from silicon substrate, glass substrate or ceramic substrate as claim 15 or 16 described metal micro structure formation methods.
22. metal micro structure formation method as claimed in claim 17 is characterized in that the technology of this deposition is chosen from evaporation, sputter or electroless plating techniques.
23. metal micro structure formation method as claimed in claim 17 is characterized in that, the technology that this batch covered photoresistance is chosen from spin coating, spray coating, lamination or casting.
24. metal micro structure formation method as claimed in claim 17 is characterized in that, it is eurymeric that this batch covered photoresistance.
25. metal micro structure formation method as claimed in claim 17 is characterized in that, it is minus that this batch covered photoresistance.
26. metal micro structure formation method as claimed in claim 17, it is characterized in that, the mode of this baking is chosen from directly heating of heating plate, baking oven or infrared ray heating, and the mode of this exposure is chosen from X-ray lithography, UV lithography or direct write e-beam.
27. metal micro structure formation method as claimed in claim 17 is characterized in that, the mode of this attrition process is chosen from chemical machine processing, mechanical lapping or polishing.
28., it is characterized in that this metal micro structure more than two layers is chosen from Au, Cu, Ni, Ni-Mn alloy, Ni-Fealloy, Ni-Co alloy or Sn-Pb as claim 15 or 16 or 17 described metal micro structure formation methods.
29. a metal micro structure formation method for being applied to the microstructure elements manufacture process, is characterized in that, this metal micro structure formation method comprises following steps:
Choose a substrate, deposition first Seed Layer is criticized and is covered the ground floor photoresistance on this substrate;
Carry out the baking of this ground floor photoresistance, this ground floor photoresistance is after baking, and wherein solvent evaporation and hardening exposes afterwards, develops is with the ground floor photoresistance micro structured pattern that is shaped required;
In this ground floor photoresistance micro structured pattern pothole, electroplate required metal construction;
Carry out attrition process obtaining the ground floor metal micro structure, this attrition process will make ground floor photoresistance and plated metal consistency of thickness;
Carry out photoresistance and criticize and cover action, carry out photoresistance once more and criticize and cover, with shaping second layer photoresistance;
Carry out baking, exposure, the development of this second layer photoresistance, with the second layer photoresistance microstructure that is shaped required;
Deposit second Seed Layer, this second Seed Layer is for electroplating initial layers, tool electric conductivity and and this second layer photoresistance and this plated metal between tack, at this, this second layer photoresistance microstructure is wide and big than this ground floor photoresistance microstructure;
In this second layer photoresistance micro structured pattern pothole, electroplate required metal construction;
Carry out attrition process obtaining the second layer metal microstructure, attrition process will make this second layer photoresistance and this plated metal consistency of thickness;
Carry out photoresistance and criticize and cover action, carry out photoresistance once more and criticize and cover, with the 3rd layer of photoresistance that be shaped;
Carry out baking, exposure, the development of the 3rd layer of photoresistance, with the 3rd layer of required photoresistance microstructure that be shaped;
In the 3rd layer of photoresistance micro structured pattern pothole, electroplate required metal construction;
Carry out attrition process obtaining the three-layer metal microstructure, attrition process will make the 3rd layer of photoresistance and this plated metal consistency of thickness;
Remove this ground floor photoresistance microstructure, this second layer photoresistance microstructure and the 3rd layer of photoresistance microstructure with solvent or with reactive ion etching, in order to disengage the metal micro structure that comprises this ground floor metal micro structure, this second layer metal microstructure and this three-layer metal microstructure; And
Remove this first Seed Layer part that is not covered with etching solution, on this substrate, to obtain this metal micro structure by this ground floor metal micro structure, this second layer metal microstructure and this three-layer metal microstructure.
30. metal micro structure formation method as claimed in claim 29 is characterized in that, this first Seed Layer and this second Seed Layer are chosen from Cr under Au, Ti under Au, Ti underCu or Ti-W under Au.
31. metal micro structure formation method as claimed in claim 29 is characterized in that the technology of this deposition is chosen from evaporation, sputter or electroless plating techniques.
32. metal micro structure formation method as claimed in claim 29 is characterized in that, the technology that this batch covered photoresistance is chosen from spin coating, spray coating, lamination or casting.
33. metal micro structure formation method as claimed in claim 29 is characterized in that, it is minus that this batch covered photoresistance.
34. metal micro structure formation method as claimed in claim 29, it is characterized in that, the mode of this baking is chosen from directly heating of heating plate, baking oven or infrared ray heating, and the mode of this exposure is chosen from X-ray lithography, UV lithography or direct write e-beam.
35. metal micro structure formation method as claimed in claim 29 is characterized in that the mode of this attrition process is chosen from chemical machine processing, mechanical lapping, polishing.
36. metal micro structure formation method as claimed in claim 29 is characterized in that, this metal micro structure is chosen from Au, Cu, Ni, Ni-Mn alloy, Ni-Fe alloy, Ni-Co alloy or Sn-Pb.
37. a metal micro structure formation method for being applied to the microstructure elements manufacture process, is characterized in that, this metal micro structure formation method comprises following steps:
Choose a substrate, this substrate is for choosing from silicon substrate, glass substrate or ceramic substrate; Deposition first Seed Layer is criticized and is covered the ground floor photoresistance on this substrate, and at this, this first Seed Layer is for electroplating initial layers, tool electric conductivity and and this substrate between tack;
Carry out the baking of this ground floor photoresistance, wherein solvent evaporation makes this ground floor photoresistance hardening after baking, exposes afterwards, develops, with this ground floor photoresistance micro structured pattern that is shaped required;
In this ground floor photoresistance micro structured pattern pothole, electroplate required metal construction;
Carry out attrition process obtaining the ground floor metal micro structure, attrition process will make this ground floor photoresistance and plated metal consistency of thickness;
Carry out photoresistance and criticize and cover, with shaping second layer photoresistance;
Second layer photoresistance is toasted, exposes, develops, with the second layer photoresistance microstructure that is shaped required;
In second layer photoresistance micro structured pattern pothole, electroplate required metal construction;
Carry out attrition process obtaining the second layer metal microstructure, attrition process will make this second layer photoresistance and this plated metal consistency of thickness;
Remove this ground floor photoresistance microstructure and this second layer photoresistance microstructure with solvent or with reactive ion etching, in order to disengage the metal micro structure that comprises this ground floor metal micro structure and this second layer metal microstructure; And
Remove not this first Seed Layer of being covered by this ground floor metal micro structure and this second layer metal microstructure partly with etching solution, on this substrate, to obtain this metal micro structure.
38. metal micro structure formation method as claimed in claim 37 is characterized in that, this first Seed Layer is chosen from Cr under Au, Ti under Au, Ti under Cu or Ti-W underAu.
39. metal micro structure formation method as claimed in claim 37 is characterized in that the technology of this deposition is chosen from evaporation, sputter or electroless plating techniques.
40. metal micro structure formation method as claimed in claim 37 is characterized in that, the technology that this batch covered photoresistance is chosen from spin coating, spray coating, lamination or casting.
41. metal micro structure formation method as claimed in claim 37 is characterized in that, it is minus that this batch covered photoresistance.
42. metal micro structure formation method as claimed in claim 37, it is characterized in that, the mode of this baking is chosen from directly heating of heating plate, baking oven or infrared ray heating, and the mode of this exposure is chosen from X-ray lithography, UV lithography or direct write e-beam.
43. metal micro structure formation method as claimed in claim 37 is characterized in that the mode of this attrition process is chosen from chemical machine processing, mechanical lapping, polishing.
44. metal micro structure formation method as claimed in claim 37 is characterized in that, this metal micro structure is chosen from Au, Cu, Ni, Ni-Mn alloy, Ni-Fe alloy, Ni-Co alloy or Sn-Pb.
45. a metal micro structure formation method for being applied to the microstructure elements manufacture process, is characterized in that, this metal micro structure formation method comprises following steps:
Choose a substrate, this substrate is for choosing from silicon substrate, glass substrate or ceramic substrate; Deposition first Seed Layer is criticized and is covered the ground floor photoresistance on this substrate, and at this, this first Seed Layer is for electroplating initial layers, tool electric conductivity and and this substrate between tack;
This ground floor photoresistance is toasted, and after baking, wherein solvent evaporation makes this ground floor photoresistance hardening, exposes afterwards, develops, with the ground floor photoresistance micro structured pattern that is shaped required;
In this ground floor photoresistance micro structured pattern pothole, electroplate required metal construction;
Remove this ground floor photoresistance;
Apply diffluent hard waxes and/or high molecular polymer to form first hard layer, this first hard layer material can bear the mechanical force of attrition process, can improve the restriction that photoresistance is selected again;
Carry out attrition process obtaining the ground floor metal micro structure, attrition process will make coated this first hard layer and plated metal consistency of thickness;
Carry out photoresistance and criticize and cover, with shaping second layer photoresistance;
This second layer photoresistance is toasted, exposes, develops, with the second layer photoresistance microstructure that is shaped required;
In this second layer photoresistance micro structured pattern pothole, electroplate required metal construction;
Remove this second layer photoresistance;
Apply diffluent hard waxes or high molecular polymer to form second hard layer, this second hard layer material can bear the mechanical force of attrition process, can improve the restriction that photoresistance is selected again;
Carry out attrition process obtaining the second layer metal microstructure, attrition process will make coated this second hard layer and plated metal consistency of thickness; And
Remove first hard layer and second hard layer with solvent or with reactive ion etching, in order to disengage the metal micro structure that comprises this ground floor metal micro structure and this second layer metal microstructure; Remove not this first Seed Layer of being covered by this ground floor metal micro structure and this second layer metal microstructure partly with etching solution, on this substrate, to obtain this metal micro structure.
46. metal micro structure formation method as claimed in claim 45 is characterized in that, this first Seed Layer is chosen from Cr under Au, Ti under Au, Ti under Cu or Ti-W underAu.
47. metal micro structure formation method as claimed in claim 45 is characterized in that the technology of this deposition is chosen from evaporation, sputter or electroless plating techniques.
48. metal micro structure formation method as claimed in claim 45 is characterized in that, the technology that this batch covered photoresistance is chosen from spin coating, spray coating, lamination or casting.
49. metal micro structure formation method as claimed in claim 45 is characterized in that, it is minus that this batch covered photoresistance.
50. metal micro structure formation method as claimed in claim 45, it is characterized in that, the mode of this baking is chosen from directly heating of heating plate, baking oven or infrared ray heating, and the mode of this exposure is chosen from X-ray lithography, UV lithography or direct write e-beam.
51. metal micro structure formation method as claimed in claim 45 is characterized in that the mode of this attrition process is chosen from chemical machine processing, mechanical lapping, polishing.
52. metal micro structure formation method as claimed in claim 45 is characterized in that, this metal micro structure is chosen from Au, Cu, Ni, Ni-Mn alloy, Ni-Fe alloy, Ni-Co alloy or Sn-Pb.
53. a metal micro structure formation method for being applied to the microstructure elements manufacture process, is characterized in that, this metal micro structure formation method comprises following steps:
Choose a substrate and criticize on this substrate and cover the ground floor photoresistance, this substrate is for choosing from silicon substrate, glass substrate or ceramic substrate;
Carry out this ground floor photoresistance baking, after baking, wherein solvent evaporation makes this ground floor photoresistance hardening;
Batch cover second layer photoresistance, after batch covering this second layer photoresistance, carry out baking, the exposure of this second layer photoresistance;
This ground floor photoresistance and this second layer photoresistance are developed, in order to required ground floor photoresistance micro structured pattern and the second layer photoresistance micro structured pattern of being shaped of developing; This ground floor photoresistance and this second layer photoresistance have repeatedly to criticize and cover photoresistance → baking → exposure, are the characteristic of once developing afterwards;
Deposition Seed Layer, this Seed Layer be for electroplating initial layers, tool electric conductivity and and this ground floor photoresistance and this second layer photoresistance and this plated metal between tack, at this, this second layer photoresistance microstructure is wide and big than this ground floor photoresistance microstructure;
In this ground floor photoresistance micro structured pattern and this second layer photoresistance micro structured pattern pothole, electroplate required metal construction;
Carry out attrition process obtaining the ground floor metal micro structure, attrition process will make photoresistance thickness and plated metal consistency of thickness;
Carry out the 3rd layer of photoresistance and criticize and cover, toast after batch covering the 3rd layer of photoresistance, after baking, wherein solvent evaporation makes the 3rd layer of photoresistance hardening, exposes afterwards, develops, to be shaped the 3rd layer of required photoresistance micro structured pattern;
In the 3rd layer of photoresistance micro structured pattern pothole, electroplate required metal construction; Carry out attrition process obtaining the second layer metal microstructure, attrition process will make the 3rd layer of photoresistance thickness and plated metal consistency of thickness; And
Remove ground floor photoresistance microstructure, second layer photoresistance microstructure and the 3rd layer of photoresistance microstructure with solvent or with reactive ion etching, in order to disengage the metal micro structure that comprises this ground floor metal micro structure and this second layer metal microstructure, on this substrate, to obtain this metal micro structure.
54. metal micro structure formation method as claimed in claim 53 is characterized in that, this Seed Layer is chosen from Cr under Au, Ti under Au, Ti under Cu or Ti-W under Au.
55. metal micro structure formation method as claimed in claim 53 is characterized in that the technology of this deposition is chosen from evaporation, sputter or electroless plating techniques.
56. metal micro structure formation method as claimed in claim 53 is characterized in that, the technology that this batch covered photoresistance is chosen from spin coating, spray coating, lamination or casting.
57. metal micro structure formation method as claimed in claim 53 is characterized in that, it is minus that this batch covered photoresistance.
58. metal micro structure formation method as claimed in claim 53, it is characterized in that, the mode of this baking is chosen from directly heating of heating plate, baking oven or infrared ray heating, and the mode of this exposure is chosen from X-ray lithography, UV lithography or direct write e-beam.
59. metal micro structure formation method as claimed in claim 53 is characterized in that the mode of this attrition process is chosen from chemical machine processing, mechanical lapping, polishing.
60. metal micro structure formation method as claimed in claim 54 is characterized in that, this metal micro structure is chosen from Au, Cu, Ni, Ni-Mn alloy, Ni-Fe alloy, Ni-Co alloy or Sn-Pb.
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| CN102731103A (en) * | 2012-05-30 | 2012-10-17 | 深圳光启创新技术有限公司 | Meta-material harmonic oscillator and preparation method thereof |
| CN104388994A (en) * | 2014-10-09 | 2015-03-04 | 中国电子科技集团公司第五十五研究所 | Method for reducing galvanized coating figure distortion |
| CN108175937A (en) * | 2017-12-26 | 2018-06-19 | 深圳先进技术研究院 | A kind of linking probe, preparation method and the purposes in microelectrode array connection |
| CN109872988A (en) * | 2017-12-04 | 2019-06-11 | 希华晶体科技股份有限公司 | The preparation method and its product of route is miniaturized |
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2009
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| CN102731103A (en) * | 2012-05-30 | 2012-10-17 | 深圳光启创新技术有限公司 | Meta-material harmonic oscillator and preparation method thereof |
| CN104388994A (en) * | 2014-10-09 | 2015-03-04 | 中国电子科技集团公司第五十五研究所 | Method for reducing galvanized coating figure distortion |
| CN109872988A (en) * | 2017-12-04 | 2019-06-11 | 希华晶体科技股份有限公司 | The preparation method and its product of route is miniaturized |
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Application publication date: 20110330 |