CN102478765A - Method for fabricating micro-structure - Google Patents
Method for fabricating micro-structure Download PDFInfo
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- CN102478765A CN102478765A CN 201110120117 CN201110120117A CN102478765A CN 102478765 A CN102478765 A CN 102478765A CN 201110120117 CN201110120117 CN 201110120117 CN 201110120117 A CN201110120117 A CN 201110120117A CN 102478765 A CN102478765 A CN 102478765A
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- resist
- metal material
- microstructure
- masterplate
- microstructure graph
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Abstract
Embodiment of the invention provides a method for fabricating micro-structure. The method comprises forming a desired metal material on a substrate; coating a photoresist layer on the metal material; pressing a template with preset micro-structure pattern on the photoresist, to form a micro-structure pattern on the photoresist; separating the template from the photoresist; transferring the micro-structure pattern on the photoresist to the metal material; and removing the photoresist on the metal material. The invention realizes large-area preparation of micron-level structure.
Description
[technical field]
The present invention relates to microstructure fabricating technology field, relate in particular to a kind of method for preparing microstructure.
[background technology]
At present; In the technology of preparation microstructure, the inexpensive method of generally acknowledging is a photoetching technique, but photoetching technique receives the restriction aspect two at the large-area microstructure graph of preparation: litho machine generally designs for semiconductor technology on the one hand; Best production line is 12 inches production lines at present; If the base material greater than 12 inches, just must be used splicing, be difficult to disposable realization large area lithography; On the other hand, the litho machine great majority are step-type, that is to say can only be on the base the identical figure of exposure of repeatability, on substrate, realize the figure of difformity, different densities, different size if desired, photoetching is difficult to realize.
In the prior art; Stamping technique is as a kind of new processing technology; When making the structure of nanometer scale, master mold or masterplate are pressed in the compliant material, material will deform according to the figure of masterplate; Pass through uv-exposure or heat-treating methods again, just can be in this material with the masterplate graph copying.
In the research practice process to prior art, the inventor finds: stamping technique of the prior art is mainly used in the figure that small size is made nanometer scale, but does not also have relevant technology in the structure aspects of large-area preparation micron dimension.
[summary of the invention]
Technical matters to be solved by this invention provides a kind of method for preparing microstructure, can the needed micrometer structure of large-area preparation.
For solving the problems of the technologies described above, the embodiment of the invention provides a kind of method for preparing microstructure, and this method comprises:
On substrate, form the required metal material of one deck;
On said metal material, apply one deck resist;
Microstructure graph masterplate that presets and said resist are carried out pressing;
After forming microstructure graph on the said resist, said microstructure graph masterplate and said resist are separated;
Microstructure graph on the said resist is transferred on the said metal material;
Remove the said resist on the said metal material.
The technical scheme that the embodiment of the invention provides, through on metal material, applying one deck resist, with the figure transfer on the microstructure graph masterplate to resist; And then the microstructure graph on the resist transferred on the metal material; Thereby effectively protected metal material, and as required, structure that can the large-area preparation micron dimension; Cost is low, simple to operate, but industrialization.
[description of drawings]
In order to be illustrated more clearly in the technical scheme in the embodiment of the invention; The accompanying drawing of required use is done to introduce simply in will describing embodiment below; Obviously, the accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills; Under the prerequisite of not paying creative work property, can also obtain other accompanying drawing according to these accompanying drawings.
A kind of preparation microstructure status of processes figure that Fig. 1 provides for the embodiment of the invention;
A kind of method flow diagram for preparing microstructure that Fig. 2 provides for the embodiment of the invention one;
A kind of method flow diagram for preparing microstructure that Fig. 3 provides for the embodiment of the invention two;
A kind of method flow diagram for preparing microstructure that Fig. 4 provides for the embodiment of the invention three;
A kind of method flow diagram for preparing microstructure that Fig. 5 provides for the embodiment of the invention four;
A kind of method flow diagram for preparing microstructure that Fig. 6 provides for the embodiment of the invention five.
[embodiment]
To combine the accompanying drawing in the embodiment of the invention below, the technical scheme in the embodiment of the invention is carried out clear, intactly description, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills are not making all other embodiment that obtained under the creative work prerequisite, all belong to the scope of the present invention's protection.
At first, for those skilled in the art are more readily understood technical scheme of the present invention, technical scheme of the present invention is carried out overall introduction below in conjunction with Fig. 1:
A kind of preparation microstructure status of processes figure that Fig. 1 provides for the embodiment of the invention, wherein: 11 is microstructure masterplate cut-open view; 12 is the constitutional diagram shown in after forming the required metal material of one deck on the substrate; 13 is the constitutional diagram shown in after applying one deck resist on the metal material; 14 are the constitutional diagram shown in the microstructure graph masterplate that presets and resist being carried out after the pressing; 16 is the constitutional diagram shown in after forming microstructure graph on the resist; 17 for transferring to the microstructure graph on the resist constitutional diagram shown in the back on the metal material; 18 are the constitutional diagram shown in removing behind the resist on the metal material.
Embodiment one,
Referring to Fig. 2, be a kind of method flow diagram for preparing microstructure that the embodiment of the invention one provides, this method for preparing microstructure comprises the steps:
S21: on substrate, form the required metal material of one deck.
This substrate can be flexible substrate or rigid substrate.
S22: on metal material, apply one deck resist.
This resist can be photoresist or other erosion resistants except that photoresist.
S23: microstructure graph masterplate that presets and resist are carried out pressing.
S24: after forming microstructure graph on the resist, microstructure graph masterplate and resist are separated.
S25: the microstructure graph on the resist is transferred on the metal material.
S26: remove the erosion resistant on the metal material.
In the present embodiment, through on metal material, applying one deck resist, with the figure transfer on the microstructure graph masterplate to resist; Resist and microstructure graph masterplate are separated; And then the microstructure graph on the resist transferred on the metal material, effectively protected metal material through resist, and structure that can the large-area preparation micron dimension; Cost is low, simple to operate, but industrialization.
Embodiment two,
Referring to Fig. 3, be a kind of method flow diagram for preparing microstructure that the embodiment of the invention two provides, this method for preparing microstructure comprises the steps:
S31: the microstructure graph masterplate of making micron dimension.
Concrete, a hard substrate is provided; On substrate, form required figure, the microstructure graph of this figure and micron dimension is opposite.
S32: the required metal material of vapor deposition one deck on substrate.
Wherein, evaporation coating technique belongs to the technology of well known to a person skilled in the art, repeats no more here.
S33: on metal material, apply one deck resist.
For example, on metal material, apply one deck photoresist.In concrete implementation process, resist is a photoresist; Perhaps the resist of other except that photoresist is selected according to concrete demand.
S34: microstructure graph masterplate and resist are carried out pressing.
For example, with microstructure graph masterplate and resist consistency from top to bottom, then the microstructure graph masterplate is exerted pressure, make resist be filled into the cavity of microstructure graph masterplate, the cavity that the size of pressure is filled full microstructure graph masterplate with resist is as the criterion.
In concrete implementation process, can adopt the mode of hot pressing.
S35: after forming microstructure graph on the resist, microstructure graph masterplate and resist are separated.
In concrete implementation process; The sunk part of being pressed on the resist has just become resist residual layer as thin as a wafer; In order to expose the metal material below it, also need further remove the resist residual layer, can adopt the mode of dry etching to remove the resist residual layer.
S36: adopt the method for wet etching, at the microstructure graph that etches on the metal material on the resist.
Wherein, the method for wet etching is to well known to a person skilled in the art technology, repeats no more here.
S37: adopt alkali to remove the resist on the metal material.
In concrete implementation process, can adopt acetone to remove the resist on the metal material.
In the present embodiment; At first make required microstructure graph template, through on metal material, applying one deck resist, with the figure transfer on the microstructure graph masterplate to resist; Resist and microstructure graph masterplate are separated; And then the microstructure graph on the resist transferred on the metal material, effectively protected metal material through resist, and structure that can the required micron dimension of large-area preparation.
Embodiment three,
Referring to Fig. 4, be a kind of method flow diagram for preparing microstructure that the embodiment of the invention three provides, this method for preparing microstructure comprises the steps:
S41: the microstructure graph masterplate of making micron dimension.
Concrete, a hard substrate is provided; On substrate, form required figure, the microstructure graph of this figure and micron dimension is opposite.
S42: on substrate, adopt the required metal material of bonding agent pressing one deck.
For example, on substrate, apply one deck tackifier,, under certain pressure, carry out punching press, make metal material and substrate form an integral body then with required metal material and substrate consistency from top to bottom.
S43: on metal material, apply one deck resist.
For example, on metal material, apply one deck photoresist.In concrete implementation process, resist is a photoresist; Perhaps the resist of other except that photoresist is selected according to concrete demand.
S44: microstructure graph masterplate and resist are carried out pressing.
For example, with microstructure graph masterplate and resist consistency from top to bottom, then the microstructure graph masterplate is exerted pressure, make resist be filled into the cavity of microstructure graph masterplate, the cavity that the size of pressure is filled full microstructure graph masterplate with resist is as the criterion.
In concrete implementation process, can adopt the mode of hot pressing.
S45: after forming microstructure graph on the resist, microstructure graph masterplate and resist are separated.
In concrete implementation process; The sunk part of being pressed on the resist has just become resist residual layer as thin as a wafer; In order to expose the metal material below it, also need further remove the resist residual layer, can adopt the mode of dry etching to remove the resist residual layer.
S46: adopt the method for dry etching, at the microstructure graph that etches on the metal material on the resist.
For example, as mask, metal material carries out selective etch with the microstructure graph on the resist, thereby on metal material, forms microstructure graph.
S47: adopt alkali to remove the resist on the metal material.
In concrete implementation process, can adopt acetone to remove the resist on the metal material.
Present embodiment is with respect to embodiment two, and the mode that on substrate, forms required metal material is different, and present embodiment adopts the mode of pressing on substrate, to form metal material; The mode that microstructure graph on the resist is transferred on the metal material is different, and present embodiment adopts the method for dry etching, at the microstructure graph that etches on the metal material on the resist.In concrete implementation process, can select the embodiment that is fit to according to concrete demand.
Embodiment four,
Referring to Fig. 5, be a kind of method flow diagram for preparing microstructure that the embodiment of the invention four provides, this method for preparing microstructure comprises the steps:
S51: the microstructure graph masterplate of making micron dimension.
Concrete, a hard substrate is provided; On substrate, form required figure, the microstructure graph of this figure and micron dimension is opposite.
S52: the required metal material of vapor deposition one deck on substrate.
Wherein, evaporation coating technique belongs to the technology of well known to a person skilled in the art, repeats no more here.
S53: on metal material, apply one deck resist.
For example, on metal material, apply one deck positive photoresist.In concrete implementation process, resist is a photoresist; Perhaps the resist of other except that photoresist is selected according to concrete demand.
S54: microstructure graph masterplate and resist are carried out pressing.
For example, with microstructure graph masterplate and resist consistency from top to bottom, then the microstructure graph masterplate is exerted pressure, make resist be filled into the cavity of microstructure graph masterplate, the cavity that the size of pressure is filled full microstructure graph masterplate with resist is as the criterion.
In concrete implementation process, can adopt the mode of hot pressing.
S55: after forming microstructure graph on the resist, microstructure graph masterplate and resist are separated.
In concrete implementation process; The sunk part of being pressed on the resist has just become resist residual layer as thin as a wafer; In order to expose the metal material below it, also need further remove the resist residual layer, can adopt the mode of dry etching to remove the resist residual layer.
S56: adopt the method for dry etching, at the microstructure graph that etches on the metal material on the resist.
For example, as mask, metal material carries out selective etch with the microstructure graph on the resist, thereby on metal material, forms microstructure graph.
S57: adopt alkali to remove the resist on the metal material.
In concrete implementation process, can adopt acetone to remove the resist on the metal material.
Present embodiment is with respect to embodiment two, and the mode that the microstructure graph on the resist is transferred on the metal material is different, and present embodiment adopts the method for dry etching, at the microstructure graph that etches on the metal material on the resist.In concrete implementation process, can select the embodiment that is fit to according to concrete demand.
Embodiment five,
Referring to Fig. 6, be a kind of method flow diagram for preparing microstructure that the embodiment of the invention five provides, this method for preparing microstructure comprises the steps:
S61: the microstructure graph masterplate of making micron dimension.
Concrete, a hard substrate is provided; On substrate, form required figure, the microstructure graph of this figure and micron dimension is opposite.
S62: on substrate, adopt the required metal material of bonding agent pressing one deck.
For example, on substrate, apply one deck tackifier,, under certain pressure, carry out punching press, make metal material and substrate form an integral body then with required metal material and substrate consistency from top to bottom.
S63: on metal material, apply one deck resist.
For example, on metal material, apply one deck photoresist.In concrete implementation process, resist is a photoresist; Perhaps the resist of other except that photoresist is selected according to concrete demand.
S64: microstructure graph masterplate and resist are carried out pressing.
For example, with microstructure graph masterplate and resist consistency from top to bottom, then the microstructure graph masterplate is exerted pressure, make resist be filled into the cavity of microstructure graph masterplate, the cavity that the size of pressure is filled full microstructure graph masterplate with resist is as the criterion.
In concrete implementation process, can adopt the mode of hot pressing.
S65: after forming microstructure graph on the resist, microstructure graph masterplate and resist are separated.
In concrete implementation process; The sunk part of being pressed on the resist has just become resist residual layer as thin as a wafer; In order to expose the metal material below it, also need further remove the resist residual layer, can adopt the mode of dry etching to remove the resist residual layer.
S66: adopt the method for wet etching, at the microstructure graph that etches on the metal material on the resist.
Wherein, the method for wet etching is to well known to a person skilled in the art technology, repeats no more here.
S67: adopt alkali to remove the resist on the metal material.
In concrete implementation process, can adopt acetone to remove the resist on the metal material.
Present embodiment is with respect to embodiment two, and the mode that on substrate, forms required metal material is different, and present embodiment adopts the mode of pressing on substrate, to form metal material.In concrete implementation process, can select the embodiment that is fit to according to concrete demand.
More than the embodiment of the invention has been carried out detailed introduction, used concrete example among this paper principle of the present invention and embodiment set forth, the explanation of above embodiment just is used for helping to understand method of the present invention and core concept thereof; Simultaneously, for one of ordinary skill in the art, according to thought of the present invention, the part that on embodiment and range of application, all can change, in sum, this description should not be construed as limitation of the present invention.
Claims (11)
1. a method for preparing microstructure is characterized in that, said method comprises:
On substrate, form the required metal material of one deck;
On said metal material, apply one deck resist;
Microstructure graph masterplate that presets and said resist are carried out pressing;
After forming microstructure graph on the said resist, said microstructure graph masterplate and said resist are separated;
Microstructure graph on the said resist is transferred on the said metal material;
Remove the resist on the said metal material.
2. method according to claim 1 is characterized in that, said the microstructure graph masterplate that presets and said resist is carried out also comprising before the pressing:
Make the microstructure graph masterplate of micron dimension.
3. method according to claim 1 is characterized in that, the said required metal material of one deck that on substrate, forms comprises:
The required metal material of vapor deposition one deck on substrate.
4. method according to claim 1 is characterized in that, the said required metal material of one deck that on substrate, forms comprises:
On substrate, adopt the required metal material of bonding agent pressing one deck.
5. method according to claim 1 is characterized in that, said resist is a photoresist; The perhaps resist of other except that photoresist.
6. method according to claim 1 is characterized in that, said microstructure graph on the said resist is transferred on the said metal material, comprising:
Adopt the method for wet etching, at the microstructure graph that etches on the said metal material on the said resist.
7. method according to claim 1 is characterized in that, said microstructure graph on the said resist is transferred on the said metal material, comprising:
Adopt the method for dry etching, at the microstructure graph that etches on the said metal material on the said resist.
8. method according to claim 1 is characterized in that, the said resist on the said metal material of said removal comprises:
Adopt alkali to remove the said resist on the said metal material.
9. method according to claim 9 is characterized in that, said employing alkali is removed the said resist on the said metal material, comprising:
Adopt acetone to remove the said resist on the said metal material.
10. method according to claim 1 is characterized in that, said substrate is rigid material or flexible material.
11. method according to claim 1 is characterized in that, said microstructure graph masterplate is a micron dimension microstructure graph masterplate.
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| CN 201110120117 CN102478765A (en) | 2011-05-10 | 2011-05-10 | Method for fabricating micro-structure |
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| CN 201110120117 CN102478765A (en) | 2011-05-10 | 2011-05-10 | Method for fabricating micro-structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104821280A (en) * | 2015-03-10 | 2015-08-05 | 上海蓝沛新材料科技股份有限公司 | Method for manufacturing high density copper etched circuit board |
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| WO2009086184A1 (en) * | 2007-12-21 | 2009-07-09 | The Regents Of The University Of California | Organo-metallic hybrid materials for micro- and nanofabrication |
| CN101995766A (en) * | 2009-08-21 | 2011-03-30 | 技鼎股份有限公司 | Metal microstructure forming method |
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| CN1800984A (en) * | 2005-12-27 | 2006-07-12 | 国家纳米技术产业化基地 | Negative nano-imprinting method |
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| WO2009086184A1 (en) * | 2007-12-21 | 2009-07-09 | The Regents Of The University Of California | Organo-metallic hybrid materials for micro- and nanofabrication |
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Application publication date: 20120530 |