CN105810556B - For the reticle of etching groove and the lithographic method of groove - Google Patents
For the reticle of etching groove and the lithographic method of groove Download PDFInfo
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- CN105810556B CN105810556B CN201410853471.7A CN201410853471A CN105810556B CN 105810556 B CN105810556 B CN 105810556B CN 201410853471 A CN201410853471 A CN 201410853471A CN 105810556 B CN105810556 B CN 105810556B
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Abstract
The present invention relates to a kind of reticles for etching groove, including the first and second groove figure regions, first groove graphics field includes the first equal bar shaped of a plurality of width, the spacing of each first bar shaped is equal, second groove graphics field includes the second equal bar shaped of a plurality of width, and the spacing of each second bar shaped is equal；The wide item equal to first bar shaped of the item of second bar shaped is wide, and the spacing of each second bar shaped is less than the spacing of each first bar shaped.The invention further relates to a kind of lithographic methods of groove.Suitable item is wide and spacing by being arranged by the present invention, so that in the case where performing etching at the same time, the groove that first groove graphics field is formed is deeper than the trench depth that second groove graphics field is formed, and the groove of two or more different depths can be formed by a lithography and etching.
Description
Technical field
The present invention relates to semiconductor technologies to further relate to a kind of ditch more particularly to a kind of reticle for etching groove
The lithographic method of slot.
Background technique
Semiconductor components and devices generally requires to form groove (Trench) structure during fabrication, or even needs in a device
Form the different groove of depth.But the same device internal channel be and meanwhile etch, therefore the depth of groove be it is fixed, can not
Realize the difference of trench depth.Therefore be the trench depth for realizing differentiation in traditional technology, it needs to carry out photoetching more than twice
And etching, cause the manufacturing cost of product to increase.
Summary of the invention
Based on this, it is necessary to provide a kind of reticle for etching groove, a lithography and etching shape can be passed through
At the groove of two or more different depths.
A kind of reticle for etching groove, including first groove graphics field and second groove graphics field, it is described
First groove graphics field includes the first equal bar shaped of a plurality of width, and the spacing of each first bar shaped is equal, the second groove
Graphics field includes the second equal bar shaped of a plurality of width, and the spacing of each second bar shaped is equal, the first groove graphics field
Unit area in the first bar shaped occupied area not equal to the second groove graphics field unit area in the second bar shaped institute
Account for area；The first groove graphics field and second groove graphics field are used to photoetching and etch form groove, and described first
Groove figure region is used to form the groove of the trench depth depth formed than second groove graphics field；The item of second bar shaped
The wide item equal to first bar shaped is wide, and the spacing of each second bar shaped is less than the spacing or second bar shaped of each first bar shaped
The wide item less than first bar shaped of item it is wide, wide the sum of the spacing between the first bar shaped of the item of first bar shaped be equal to Article 2
Wide the sum of the spacing between the second bar shaped of the item of shape.
The wide item equal to first bar shaped of the item of second bar shaped is wide in one of the embodiments, each Article 2
The spacing of shape is less than the spacing of each first bar shaped.
The second bar shaped occupied area is in the unit area of the second groove graphics field in one of the embodiments,
1.2~2 times of first bar shaped occupied area in the unit area of the first groove graphics field.
The wide item less than first bar shaped of the item of second bar shaped is wide in one of the embodiments, and described first
Wide the sum of the spacing between the first bar shaped of the item of bar shaped is equal to wide the sum of spacing between the second bar shaped of item of the second bar shaped.
The first bar shaped occupied area is in the unit area of the first groove graphics field in one of the embodiments,
1.1~1.8 times of second bar shaped occupied area in the unit area of the second groove graphics field.
The present invention also provides a kind of lithographic methods of groove.
A kind of lithographic method of groove, including the following steps: wafer is provided；Wafer is carried out by etching groove reticle
Photoetching forms the first photoengraving pattern and the second photoengraving pattern on a photoresist；The etching groove reticle includes first groove
Graphics field and second groove graphics field, first photoengraving pattern are that first groove graphics field is transferred to shape on photoresist
At pattern, second photoengraving pattern is that second groove graphics field is transferred to the pattern formed on photoresist；Described first
Groove figure region includes the first equal bar shaped of a plurality of width, and the spacing of each first bar shaped is equal, the second groove figure
Region includes the second equal bar shaped of a plurality of width, and the spacing of each second bar shaped is equal, the list of the first groove graphics field
The first bar shaped occupied area is not equal to face shared by the second bar shaped in the unit area of the second groove graphics field in plane product
Product；The wide item equal to first bar shaped of the item of second bar shaped is wide, and the spacing of each second bar shaped is less than each first bar shaped
Spacing or the wide item less than first bar shaped of the item of second bar shaped are wide, the item of first bar shaped it is wide with first
The sum of spacing is equal to wide the sum of spacing between the second bar shaped of item of the second bar shaped between shape；It is done under the masking of the photoresist
Method etching, etches first groove area by first photoengraving pattern, etches the second ditch by second photoengraving pattern
Slot area, the trench depth in the first groove area are deeper than the trench depth in the second groove area.
The wide item equal to first bar shaped of the item of second bar shaped is wide in one of the embodiments, each Article 2
The spacing of shape is less than the spacing of each first bar shaped.
The second bar shaped occupied area is in the unit area of the second groove graphics field in one of the embodiments,
1.2~2 times of first bar shaped occupied area in the unit area of the first groove graphics field.
The wide item less than first bar shaped of the item of second bar shaped is wide in one of the embodiments, and described first
Wide the sum of the spacing between the first bar shaped of the item of bar shaped is equal to wide the sum of spacing between the second bar shaped of item of the second bar shaped.
The first bar shaped occupied area is in the unit area of the first groove graphics field in one of the embodiments,
1.1~1.8 times of second bar shaped occupied area in the unit area of the second groove graphics field.
The above-mentioned reticle for etching groove, suitable item is wide and spacing by being arranged, so that performing etching at the same time
In the case where, the groove that first groove graphics field is formed is deeper than the trench depth that second groove graphics field is formed, can
The groove of two or more different depths is formed by a lithography and etching.
Detailed description of the invention
By being more particularly described for the preferred embodiment of the present invention shown in the drawings, above and other mesh of the invention
, feature and advantage will become more fully apparent.Identical appended drawing reference indicates identical part in all the attached drawings, and does not carve
Meaning draws attached drawing by actual size equal proportion scaling, it is preferred that emphasis is shows the gist of the present invention.
Fig. 1 is first groove graphics field and second groove graphics field of the present invention in the reticle of etching groove
Schematic diagram；
Fig. 2 is the schematic diagram of first groove graphics field and second groove graphics field in embodiment 1；
Fig. 3 is the schematic diagram of first groove graphics field and second groove graphics field in embodiment 2；
Fig. 4 is a kind of flow chart of the lithographic method of groove of the present invention.
Specific embodiment
To facilitate the understanding of the present invention, a more comprehensive description of the invention is given in the following sections with reference to the relevant attached drawings.In attached drawing
Give preferred embodiment of the invention.But the invention can be realized in many different forms, however it is not limited to this paper institute
The embodiment of description.On the contrary, purpose of providing these embodiments is make it is more thorough and comprehensive to the disclosure.
Unless otherwise defined, all technical and scientific terms used herein and belong to technical field of the invention
The normally understood meaning of technical staff is identical.Term as used herein in the specification of the present invention is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term " and or " used herein includes one or more phases
Any and all combinations of the listed item of pass.
The present invention provides a kind of reticle for etching groove, as shown in Figure 1, reticle 100 includes first groove figure
Shape region 10 and second groove graphics field 20, first groove graphics field 10 and second groove graphics field 20 are used for photoetching simultaneously
Etching forms groove.First groove graphics field 10 includes the first equal bar shaped of a plurality of width, the spacing phase of each first bar shaped
Deng.Second groove graphics field 20 includes the second equal bar shaped of a plurality of width, and the spacing of each second bar shaped is equal.Pass through setting
Suitable item is wide and spacing, and the first bar shaped occupied area in the unit area of first groove graphics field is made to be different from second groove
Second bar shaped occupied area in the unit area of graphics field, so that the groove that first groove graphics field is formed is than second
The trench depth that groove figure region is formed is deep.
It should be understood that being the explanation carried out for forming the region of two different depth grooves above, in need
When more than two groove figure regions can certainly be accordingly set, the different groove of multiple groups groove depth is formed after etching.
Embodiment 1:
Fig. 2 is please referred to, the left side Fig. 2 is the schematic diagram of first groove graphics field 10, and the right is second groove graphics field
20 schematic diagram.In this embodiment, the width of the first bar shaped 11 and the second bar shaped 21 is B, and the spacing A of the first bar shaped 11 is big
In the spacing C of the second bar shaped 21.Therefore, the density of bar shaped is greater than first groove graphics field in second groove graphics field 20
The density of bar shaped in 10.Preferably, area shared by second bar shaped 21 is in the unit area of second groove graphics field 20
1.2~2 times of area shared by first bar shaped 11 in the unit area in one groove figure region 10.In embodiment 1, with first
On the basis of groove figure region 10, it is shallower that trench depth can be obtained by adjusting spacing in the case where not changing the wide B of item
Second groove graphics field 20.
Due to needing to etch in 20 unit area of first groove graphics field 10 and second groove graphics field in embodiment 1
The amount fallen is different, and the load (loading) of gas is different, and the density of bar shaped is bigger, and the reaction gas needed is more, anti-
Answer gas not and be it is very sufficient in the case where, the depth of etching can shoal.
Embodiment 2:
Fig. 3 is please referred to, the left side Fig. 3 is the schematic diagram of second groove graphics field 20, and the right is first groove graphics field
10 schematic diagram.In this embodiment, item wide b ' of the wide b of item of the second bar shaped 22 less than the first bar shaped 12, and the first bar shaped 12
The wide b ' of item and the first bar shaped between the sum of spacing a ' be equal to the sum of spacing a, i.e. a+ between the wide b of item and the second bar shaped of the second bar shaped 22
B=a '+b '.Preferably, first bar shaped, 12 occupied area is second groove figure in the unit area of first groove graphics field 10
1.1~1.8 times of second bar shaped, 22 occupied area in the unit area in shape region 20.Embodiment 2 is applicable to obtain width
The case where different groove.On the basis of second groove graphics field 20, by increasing the area of single bar shaped, and maintaining item is wide
The value of+spacing is constant, can obtain the deeper groove of depth.
In embodiment 2, since the first bar shaped 12 is bigger relative to the area of the second bar shaped 22, gas exchanges are stronger,
The depth then etched at 12 position of the first bar shaped will be deeper than the second bar shaped 22.
The present invention also provides a kind of lithographic methods of groove, including the following steps:
S110 provides wafer.
The wafer (Wafer) for needing to carry out etching groove is got out, and completes the processing step before etching groove.
S120 carries out photoetching to wafer by etching groove reticle, forms the first photoengraving pattern and the on a photoresist
Two photoengraving patterns.
After coating photoresist to wafer, it is exposed and develops using the above-mentioned reticle for etching groove, the first ditch
Slot graphics field 10, which is transferred on photoresist, forms the first photoengraving pattern, and second groove graphics field 20 is transferred to shape on photoresist
At the second photoengraving pattern.
S130 carries out dry etching under the masking of photoresist.
Reaction gas passes through bar shaped and wafer contacts in the first photoengraving pattern, etches first groove area；Across second
Bar shaped and wafer contacts in photoengraving pattern, etch second groove area.Trench depth in first groove area compares second groove
Trench depth in area is deep.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
Limitations on the scope of the patent of the present invention therefore cannot be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to guarantor of the invention
Protect range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (6)
1. a kind of reticle for etching groove, including first groove graphics field and second groove graphics field, feature
It is, the first groove graphics field includes the first equal bar shaped of a plurality of width, and the spacing of each first bar shaped is equal, described
Second groove graphics field includes the second equal bar shaped of a plurality of width, and the spacing of each second bar shaped is equal, the first groove
The first bar shaped occupied area is not equal in the unit area of the second groove graphics field the in the unit area of graphics field
Two bar shaped occupied areas；The first groove graphics field and second groove graphics field are used to photoetching and etch form groove,
The first groove graphics field is used to form the groove of the trench depth depth formed than second groove graphics field；
Wherein, the wide item equal to first bar shaped of the item of second bar shaped is wide, and the spacing of each second bar shaped is less than each first
The spacing of bar shaped, or
The wide item less than first bar shaped of the item of second bar shaped is wide, the item of first bar shaped it is wide between the first bar shaped between
Away from the sum of be equal to the second bar shaped wide the sum of the spacing between the second bar shaped of item.
2. the reticle according to claim 1 for etching groove, which is characterized in that the second groove graphics field
Unit area in the second bar shaped occupied area be face shared by the first bar shaped in the unit area of the first groove graphics field
Long-pending 1.2~2 times.
3. the reticle according to claim 1 for etching groove, which is characterized in that the first groove graphics field
Unit area in the first bar shaped occupied area be face shared by the second bar shaped in the unit area of the second groove graphics field
Long-pending 1.1~1.8 times.
4. a kind of lithographic method of groove, including the following steps:
Wafer is provided；
Photoetching is carried out to wafer by etching groove reticle, forms the first photoengraving pattern and the second photoetching figure on a photoresist
Case；The etching groove reticle includes first groove graphics field and second groove graphics field, first photoengraving pattern
It is that first groove graphics field is transferred to the pattern formed on photoresist, second photoengraving pattern is second groove graphics field
It is transferred to the pattern formed on photoresist；The first groove graphics field includes the first equal bar shaped of a plurality of width, and each
The spacing of one bar shaped is equal, and the second groove graphics field includes the second equal bar shaped of a plurality of width, each second bar shaped
Spacing is equal, and the first bar shaped occupied area is not equal to the second groove figure in the unit area of the first groove graphics field
Second bar shaped occupied area in the unit area in shape region；The wide item equal to first bar shaped of the item of second bar shaped is wide,
The spacing of each second bar shaped be less than each first bar shaped spacing or second bar shaped item it is wide less than first bar shaped
Item is wide, and wide the sum of the spacing between the first bar shaped of the item of first bar shaped is equal to the wide spacing between the second bar shaped of item of the second bar shaped
The sum of；
Dry etching is carried out under the masking of the photoresist, first groove area is etched by first photoengraving pattern, is led to
It crosses second photoengraving pattern and etches second groove area, the trench depth in the first groove area is than the second groove area
Interior trench depth is deep.
5. the lithographic method of groove according to claim 4, which is characterized in that the unit of the second groove graphics field
The second bar shaped occupied area is 1.2 of the first bar shaped occupied area in the unit area of the first groove graphics field in area
~2 times.
6. the lithographic method of groove according to claim 4, which is characterized in that the unit of the first groove graphics field
The first bar shaped occupied area is 1.1 of the second bar shaped occupied area in the unit area of the second groove graphics field in area
~1.8 times.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410853471.7A CN105810556B (en) | 2014-12-31 | 2014-12-31 | For the reticle of etching groove and the lithographic method of groove |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410853471.7A CN105810556B (en) | 2014-12-31 | 2014-12-31 | For the reticle of etching groove and the lithographic method of groove |
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| CN105810556B true CN105810556B (en) | 2019-03-15 |
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| CN110223926A (en) * | 2019-06-25 | 2019-09-10 | 武汉新芯集成电路制造有限公司 | A kind of semiconductor devices and its manufacturing method |
| CN112987485B (en) * | 2019-12-18 | 2023-03-21 | 中芯国际集成电路制造(北京)有限公司 | Method for correcting mask graph, mask and method for forming semiconductor structure |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102044470A (en) * | 2009-10-16 | 2011-05-04 | 台湾积体电路制造股份有限公司 | Integrated circuit with multi recessed shallow trench isolation |
| CN102779780A (en) * | 2012-07-25 | 2012-11-14 | 上海华力微电子有限公司 | Method for forming non-load-effect large size groove |
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| JP4737953B2 (en) * | 2004-07-14 | 2011-08-03 | 株式会社東芝 | Manufacturing method of semiconductor device |
| CN102412260B (en) * | 2010-09-25 | 2014-07-09 | 上海华虹宏力半导体制造有限公司 | Terminal protection structure of super-junction semiconductor device and fabrication method thereof |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102044470A (en) * | 2009-10-16 | 2011-05-04 | 台湾积体电路制造股份有限公司 | Integrated circuit with multi recessed shallow trench isolation |
| CN102779780A (en) * | 2012-07-25 | 2012-11-14 | 上海华力微电子有限公司 | Method for forming non-load-effect large size groove |
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Effective date of registration: 20170926 Address after: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Applicant after: Wuxi Huarun Shanghua Technology Co., Ltd. Address before: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Applicant before: Wuxi CSMC Semiconductor Co., Ltd. |
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