CN104821280A - Method for manufacturing high density copper etched circuit board - Google Patents
Method for manufacturing high density copper etched circuit board Download PDFInfo
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- CN104821280A CN104821280A CN201510106754.XA CN201510106754A CN104821280A CN 104821280 A CN104821280 A CN 104821280A CN 201510106754 A CN201510106754 A CN 201510106754A CN 104821280 A CN104821280 A CN 104821280A
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- Prior art keywords
- circuit board
- copper
- shape layer
- layer
- etched circuit
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 186
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 186
- 239000010949 copper Substances 0.000 title claims abstract description 186
- 238000000034 method Methods 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 239000002184 metal Substances 0.000 claims abstract description 41
- 229910052751 metal Inorganic materials 0.000 claims abstract description 41
- 238000002360 preparation method Methods 0.000 claims description 43
- 239000000463 material Substances 0.000 claims description 30
- 230000008569 process Effects 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 11
- 238000007493 shaping process Methods 0.000 claims description 10
- 229920000642 polymer Polymers 0.000 claims description 7
- 238000007711 solidification Methods 0.000 claims description 4
- 230000008023 solidification Effects 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 239000003292 glue Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 238000006116 polymerization reaction Methods 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 239000003522 acrylic cement Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- -1 Polydimethylsiloxane, dimethyl Polymers 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920005644 polyethylene terephthalate glycol copolymer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Abstract
The present invention provides a method for manufacturing a high density copper etched circuit board. The method at least comprises a step of preparing a mold whose surface has a mold pattern which is matched with a conductive circuit pattern to be prepared by a high density copper etched circuit board, a step of providing a copper-coated substrate whose surface has a copper metal layer, a step of forming a formation layer on the copper-coated substrate, a step of forming a formation layer pattern which is matched with the mold pattern in the formation layer through the mold, and a step of transferring the formation layer pattern to the copper metal layer of the copper-coated substrate from the formation layer to form a conductive circuit to be prepared by the high density copper etched circuit board. According to the method, thin line conductive circuit patterns with line width and line distance in the range of 2 micrometers to 50 micrometers can be prepared, compared with a traditional circuit board, according to the high density copper etched circuit board prepared through the method, the wiring area is reduced greatly, and the wiring density is improved.
Description
Technical field
The present invention relates to technical field of circuit board, particularly relate to a kind of preparation method of high-density copper etched circuit board.
Background technology
Existing wiring board preparation technology, when forming figure, the main method taked is in the rigidity covering copper or flexible parent metal, be covered with photo-conductive film (being commonly called as " dry film "), afterwards through exposure imaging, by the Graphic transitions on film (being also mask plate) on dry film.Utilize the copper of its lower floor of dry film pattern etching afterwards, form conducting wire.But the conductive circuit pattern that the method only can prepare live width, line-spacing is greater than 200 μm, and cannot prepare hachure circuit, because it is mainly limited to two factors: is that film cannot prepare hachure, two is that the resolution of dry film also cannot reach requirement.
Along with more and more demand to the wiring board of little live width, line-spacing, the method for traditional subsides dry film, film exposure does not re-use.And if the photoresist taking IC semiconductor applications to use adopt the method for quartz mask, its cost height is higher, and photoresist needs the mode adopting spin coating, cannot produce by reel-to-reel.
Therefore, how on the basis of controlling cost, preparing high density, hachure circuit, and can realize reel-to-reel production, is the problem needing solution at present badly.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of preparation method of high-density copper etched circuit board, for solve in prior art adopt paste dry film, the method for film exposure cannot prepare hachure circuit, and adopt the method cost of spin coating photoresist, quartz mask higher, cannot the reel-to-reel problem of producing.
For achieving the above object and other relevant objects, the invention provides a kind of preparation method of high-density copper etched circuit board, wherein, the preparation method of described high-density copper etched circuit board at least comprises:
Prepare mould, described die surface has the mold graph matched with described high-density copper etched circuit board conductive circuit pattern to be prepared;
There is provided and cover copper substrate, described in cover copper substrate surfaces there is copper metal layer;
Shape layer is formed described covering in copper substrate;
In described shape layer, the shape layer figure matched with described mold graph is formed by described mould;
Cover the copper metal layer of copper substrate described in being transferred to from described shape layer by described shape layer figure, form described high-density copper etched circuit board conducting wire to be prepared.
Preferably, described cover copper substrate forms shape layer before, first form release layer described covering in copper substrate.
Preferably, the described concrete grammar preparing mould is:
Mold base is provided;
Described mold base forms structure sheaf, graphical described structure sheaf, form the mold graph matched with described high-density copper etched circuit board conductive circuit pattern to be prepared;
Wherein, the thickness of described structure sheaf is less than or equal to the thickness of described shape layer.
Preferably, when the line-spacing of described mold graph, live width are for being greater than 30 μm, the graphical described structure sheaf of laser technique is adopted; When the line-spacing of described mold graph, live width are for being greater than 2 μm, adopt the graphical described structure sheaf of litho developing process.
Preferably, in described shape layer, formed the shape layer figure matched with described mold graph by described mould, concrete grammar is:
The mold graph of described mould is stamped on described shape layer, makes described shape layer be stamped shaping;
Keep the impressing state of the mold graph of described mould on described shape layer, process is cured to the described shape layer being stamped shaping;
After solidification process completes, be separated described mould from described shape layer, obtain the shape layer figure matched with described mold graph.
Preferably, cover the copper metal layer of copper substrate described in being transferred to from described shape layer by described shape layer figure, form described high-density copper etched circuit board conducting wire to be prepared, concrete grammar is:
Remove the residual shape layer material being arranged in described shape layer figure trace clearance;
With described shape layer figure for mask, described in etching, cover the copper metal layer of copper substrate, form described high-density copper etched circuit board conducting wire to be prepared.
Preferably, the preparation method of described high-density copper etched circuit board also comprises:
Remove described shape layer figure, expose described high-density copper etched circuit board conducting wire to be prepared.
Preferably, cover the copper metal layer of copper substrate described in being transferred to from described shape layer by described shape layer figure, form described high-density copper etched circuit board conducting wire to be prepared, concrete grammar is:
Remove the residual shape layer material being arranged in described shape layer figure trace clearance;
With described shape layer figure for mask, etch described release layer, form release layer figure;
With described shape layer figure and described release layer figure for mask, cover the copper metal layer of copper substrate described in etching, form described high-density copper etched circuit board conducting wire to be prepared.
Preferably, the preparation method of described high-density copper etched circuit board also comprises:
Remove described shape layer figure and described release layer figure, expose described high-density copper etched circuit board conducting wire to be prepared.
Preferably, described in cover copper substrate and also there is basalis, described copper metal layer is positioned on described basalis, and the material of described basalis is flexible or rigid substrate; The material of described shape layer and described release layer is curable high molecular polymer.
As mentioned above, the preparation method of high-density copper etched circuit board of the present invention, has following beneficial effect:
1, the present invention adopts micro-nano imprint technique to define high-density circuit board figure, can prepare live width, line-spacing scope the hachure conductive circuit pattern of 2 μm ~ 50 μm; Adopt the high-density copper etched circuit board that the present invention is prepared from, compared to traditional circuit plate, greatly can reduce the area that connects up, improve wiring density.
2, employing the present invention can reel-to-reel, at low cost production high-density copper etched circuit board.
3, the shaping glue of high molecular polymer that the present invention utilizes impression to be shaped substitutes photoresist of the prior art, utilizes imprint process to substitute gold-tinted technique of the prior art, greatly reduces cost.
Accompanying drawing explanation
Fig. 1 is shown as the schematic flow sheet of the preparation method of the high-density copper etched circuit board of first embodiment of the invention.
Fig. 2 ~ Fig. 9 is shown as the cross-sectional view of the preparation method of the high-density copper etched circuit board of first embodiment of the invention.
Figure 10 is shown as the schematic flow sheet of the preparation method of the high-density copper etched circuit board of second embodiment of the invention.
Figure 11 ~ Figure 17 is shown as the cross-sectional view of the preparation method of the high-density copper etched circuit board of second embodiment of the invention.
Element numbers explanation
1 mould
11 mold base
12 structure sheafs
121 mold graphs
2 cover copper substrate
21 basalises
22 copper metal layers
221 high-density copper etched circuit board conducting wires to be prepared
3 shape layers
31 shape layer figures
4 release layers
41 release layer figures
S1 ~ S5, S1 ' ~ S6 ' step
Embodiment
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this specification can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this specification also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to Fig. 1, first embodiment of the invention relates to a kind of preparation method of high-density copper etched circuit board.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
The preparation method of the high-density copper etched circuit board of the present embodiment at least comprises:
Step S1, prepares mould 1, and mould 1 surface has the mold graph 121 matched with high-density copper etched circuit board conducting wire 221 to be prepared figure.
In step sl, the concrete grammar preparing mould 1 is:
First, mold base 11 is provided.
Secondly, mold base 11 forms structure sheaf 12, as shown in Figure 2; Patterned structures layer 12, forms the mold graph 121 matched with high-density copper etched circuit board conducting wire 221 to be prepared figure, as shown in Figure 3; Wherein, the thickness of structure sheaf 12 is less than or equal to the thickness of shape layer 3.
And, high-density copper etched circuit board conducting wire 221 to be prepared figure may comprise through hole, groove etc. for connecting components and parts pin, accordingly, the mold graph 121 of mould 1 has the micro-structural projection matched with these structures such as through hole, groove; That is, the grown form of mould 1 is that concave-convex surface rises and falls, and has the device of certain mechanical strength.The mold graph 121 on mould 1 surface both can prepare live width, line-spacing scope at the superfine line of 2 μm ~ 50 μm, also can prepare live width, the lines of line-spacing scope more than 50 μm.
In addition, the material of mold base 11 is glass, nickel, PETG base material (PET) or polyimides (PI); The material of structure sheaf 12 is nickel, glass or organosilicon (PDMS, Polydimethylsiloxane, dimethyl silicone polymer).Certainly, in other examples, other also can be adopted can to prepare the structural material of micro-structural projection, and other mold base materials.These materials can carry out multiple combination, and adopt the graphical structure sheaf 12 of different technique, thus form the mold graph 121 of mould 1.Such as, when the line-spacing of mold graph 121, live width are for being greater than 30 μm, the graphical structure sheaf 12 of laser technique can be adopted, certainly, also can adopt litho developing process patterned structures layer 12; When the line-spacing of mold graph 121, live width are for being greater than 2 μm, litho developing process patterned structures layer 12 can be adopted.
Step S2, provides and covers copper substrate 2, covers copper substrate 2 surface and has copper metal layer 22.
In step s 2, the copper substrate 2 of covering provided has basalis 21 and the copper metal layer 22 be positioned on basalis 21.Wherein, the material of basalis 21 is flexible or rigid substrate, such as, and flexible parent metal PET or PI, rigid substrate FR4 (epoxy glass cloth laminated board).In the present embodiment, cover copper substrate 2 and directly can select CCL (Copper-Clad Laminate, copper clad laminate).Certainly, because the thickness of copper metal layer in CCL is fixing and thicker, in other examples, cover copper substrate 2 and also first can select a flexibility or rigid substrate, then adopt the mode of sputtering at this flexibility or rigid substrate surface deposition one deck copper metal layer; Adopt the mode of sputtering can control the thickness of copper metal layer well, the thickness according to required copper metal layer deposits; Under normal circumstances, cover the copper metal layer that copper substrate 2 needs at flexible or rigid substrate surface deposition layer, be conducive to the live width of wiring board, line-spacing to do less like this.
Step S3, forms shape layer 3 covering in copper substrate 2.
In step s3, directly shape layer 3 is formed covering in copper substrate 2, as shown in Figure 4.Wherein, the material of shape layer 3 is curable high molecular polymer, such as, by the imprinting moulding glue of ultra-violet curing or can pass through acrylic adhesive of hot curing etc.In the present embodiment, the material of shape layer 3 is imprinting moulding glue.
In addition, the preparation method of the high-density copper etched circuit board of the present embodiment, is applicable to the situation that shape layer 3 is general with the adhesion of the copper metal layer 22 covering copper substrate 2 surface.If the adhesion of shape layer 3 and the copper metal layer 22 that covers copper substrate 2 surface is good, then need before formation shape layer 3, first form release layer 4 covering in copper substrate 2, specifically refer to second embodiment of the invention part.
Step S4, forms the shape layer figure 31 matched with mold graph 121 in shape layer 3 by mould 1.
In step s 4 which, in shape layer 3, formed the shape layer figure 31 matched with mold graph 121 by mould 1, concrete grammar is:
First, the mold graph 121 of mould 1 is stamped on shape layer 3, makes shape layer 3 be stamped shaping, as shown in Figure 5.
Secondly, keep the impressing state of mold graph 121 on shape layer 3 of mould 1, process is cured to the shape layer 3 being stamped shaping.
Finally, after solidification process completes, peel of mould 1 from shape layer 3, obtains the shape layer figure 31 matched with mold graph 121, as shown in Figure 6.
Wherein, curing process according to selected shape layer 3 material, can select the process conditions such as curing mode, curing time.Such as, curing mode can be ultraviolet light polymerization or hot curing, the light intensity of ultraviolet light polymerization, hot curing temperature etc. also specifically can select according to selected shape layer 3 material.
Step S5, transfers to the copper metal layer 22 covering copper substrate 2 from shape layer 3 by shape layer figure 31, form high-density copper etched circuit board conducting wire 221 to be prepared.Thus complete the preparation of high-density copper etched circuit board.
In step s 5, shape layer figure 31 is transferred to the copper metal layer 22 covering copper substrate 2 from shape layer 3, form high-density copper etched circuit board conducting wire 221 to be prepared, concrete grammar is:
First, the residual shape layer material being arranged in shape layer figure 31 trace clearance is removed, as shown in Figure 7.
Secondly, with shape layer figure 31 for mask, etching covers the copper metal layer 22 of copper substrate 2, forms high-density copper etched circuit board conducting wire 221 to be prepared, as shown in Figure 8.
Wherein, when removing the shape layer material remained being arranged in shape layer figure 31 trace clearance, the modes such as dry etching can be adopted.And, mold graph 121 due to mould 1 surface can prepare live width, line-spacing scope at the superfine line of 2 μm ~ 50 μm, therefore, the preparation method of the high-density copper etched circuit board of the present embodiment, can prepare live width, line-spacing scope the superfine line conducting wire of 2 μm ~ 50 μm.Adopt the high-density copper etched circuit board that the preparation method of the high-density copper etched circuit board of the present embodiment is prepared from, compared to traditional circuit plate, greatly can reduce the area that connects up, improve wiring density.
The preparation method of the high-density copper etched circuit board of the present embodiment, farthest remains the compatibility with existing equipment and technique, and the copper etching technics in step S5 is substantially constant.
In addition, the preparation method of the high-density copper etched circuit board of the present embodiment can also comprise:
Step S6, removes shape layer figure 31, exposes high-density copper etched circuit board conducting wire 221 to be prepared.
For step S6, in the present embodiment, if needed, shape layer figure 31 can be removed, expose high-density copper etched circuit board conducting wire 221 to be prepared, as shown in Figure 9, connect for device or peripheral circuit.In addition, the modes such as wet method can be taked to remove shape layer figure 31.Certainly, in other examples, also shape layer figure 31 can not be removed, for preparing other devices in subsequent technique.
In the present embodiment, the processes such as impression and etching all can be produced by reel-to-reel, and cost is lower.
Refer to Figure 10, second embodiment of the invention relates to a kind of preparation method of high-density copper etched circuit board.The present embodiment is roughly the same with first embodiment of the invention, difference is: first embodiment of the invention is applicable to shape layer 3 situation general with the adhesion of the copper metal layer 22 covering copper substrate 2 surface, and the present embodiment is applicable to the situation that shape layer 3 is good with the adhesion of the copper metal layer 22 covering copper substrate 2 surface or subsequent forming layer pattern 31 is crosslinked; If shape layer 3 and cover the good or subsequent forming layer pattern 31 of the adhesion of copper metal layer 22 on copper substrate 2 surface and be cross-linked, so when needs removal shape layer figure 31, the mode of wet method cannot be adopted simply to remove; Therefore, in the present embodiment, before covering copper substrate 2 forms shape layer 3, need first to form release layer 4 covering in copper substrate 2.
Specifically, the preparation method of the high-density copper etched circuit board of the present embodiment at least comprises:
Step S1 ', prepares mould 1, and mould 1 surface has the mold graph 121 matched with high-density copper etched circuit board conducting wire 221 to be prepared figure.
Step S2 ', provides and covers copper substrate 2, covers copper substrate 2 surface and has copper metal layer 22.
Wherein, the relevant technical details in step S1 ' and step S2 ' is described in the first embodiment of the invention, does not repeat them here.
Step S3 ', forms release layer 4 covering in copper substrate 2.
In step S3 ', form release layer 4 covering in copper substrate 2, refer to Figure 11.Wherein, the material of release layer 4 is curable high molecular polymer, such as, by the parting compound adhesive of ultra-violet curing or can pass through acrylic adhesive of hot curing etc.In the present embodiment, the material of release layer 4 is parting compound adhesive.
Step S4 ', release layer 4 is formed shape layer 3.
In step S4 ', release layer 4 forms shape layer 3, please continue to refer to Figure 11.Wherein, the material of shape layer 3 is curable high molecular polymer, such as, by the imprinting moulding glue of ultra-violet curing or can pass through acrylic adhesive of hot curing etc.In the present embodiment, the material of shape layer 3 is imprinting moulding glue.
In addition, the adhesion between this release layer 4 and shape layer 3, better compared to the adhesion between release layer 4 and the copper metal layer 22 covering copper substrate 2 surface.
Step S5 ', forms the shape layer figure 31 matched with mold graph 121 in shape layer 3 by mould 1.
In step S5 ', in shape layer 3, formed the shape layer figure 31 matched with mold graph 121 by mould 1, concrete grammar is:
First, the mold graph 121 of mould 1 is stamped on shape layer 3, makes shape layer 3 be stamped shaping, as shown in figure 12.
Secondly, keep the impressing state of mold graph 121 on shape layer 3 of mould 1, process is cured to the shape layer 3 being stamped shaping.
Finally, after solidification process completes, peel of mould 1 from shape layer 3, obtains the shape layer figure 31 matched with mold graph 121, as shown in figure 13.
Wherein, curing process according to selected shape layer 3 material, can select the process conditions such as curing mode, curing time.Such as, curing mode can be ultraviolet light polymerization or hot curing, the light intensity of ultraviolet light polymerization, hot curing temperature etc. also specifically can select according to selected shape layer 3 material.
Step S6 ', transfers to the copper metal layer 22 covering copper substrate 2 from shape layer 3 by shape layer figure 31, form high-density copper etched circuit board conducting wire 221 to be prepared.Thus complete the preparation of high-density copper etched circuit board.
In step S6 ', shape layer figure 31 is transferred to the copper metal layer 22 covering copper substrate 2 from shape layer 3, form high-density copper etched circuit board conducting wire 221 to be prepared, concrete grammar is:
First, the residual shape layer material being arranged in shape layer figure 31 trace clearance is removed, as shown in figure 14.
Secondly, with shape layer figure 31 for mask, etching release layer 4, forms release layer figure 41, as shown in figure 15.
Finally, with shape layer figure 31 and release layer figure 41 for mask, etching covers the copper metal layer 22 of copper substrate 2, forms high-density copper etched circuit board conducting wire 221 to be prepared, as shown in figure 16.
Wherein, when removing the shape layer material remained being arranged in shape layer figure 31 trace clearance, the modes such as dry etching can be adopted.
The preparation method of the high-density copper etched circuit board of the present embodiment, farthest remains the compatibility with existing equipment and technique, and the copper etching technics in step S6 ' is substantially constant.
In addition, the preparation method of the high-density copper etched circuit board of the present embodiment can also comprise:
Step S7 ', removes shape layer figure 31 and release layer figure 41, exposes high-density copper etched circuit board conducting wire 221 to be prepared.
For step S7 ', in the present embodiment, if needed, shape layer figure 31 and release layer figure 41 can be removed, expose high-density copper etched circuit board conducting wire 221 to be prepared, as shown in figure 17, connect for device or peripheral circuit.Certainly, in other examples, shape layer figure 31 and release layer figure 41 can not also be removed, for preparing other devices in subsequent technique.
Wherein, release layer 4 is removed from covering copper substrate 2 for helping shape layer 3.Release layer 4 is removed two kinds of mechanism: one is that release layer 4 is bad with copper metal layer 22 adhesion covering copper substrate 2 surface, and physical method can be adopted to peel off; Such as adopt and the good adhesive tape of shape layer 3 material adhesion, stick on shape layer figure 31, then pull-up adhesive tape, shape layer figure 31 and release layer figure 41 are stripped down from covering copper substrate 2 simultaneously.Two is that release layer 4 is good with copper metal layer 22 adhesion covering copper substrate 2 surface, and chemical method can be adopted to remove release layer figure 41; Such as adopt the liquid that removes photoresist that can react with release layer 4, remove release layer figure 41, thus peel off the shape layer figure 31 above release layer figure 41 simultaneously.
In addition, the preparation method of the high-density copper etched circuit board of the present embodiment, compared to prior art, is more suitable for preparation 2 μm ~ 50 μm superfine line circuits; Be there is by preparation the mould 1 of 2 μm ~ 50 μm of superfine line mold graphs 121, prepare the high-density copper etched circuit board of the superfine line conductive circuit pattern with 2 μm ~ 50 μm.Adopt the high-density copper etched circuit board that the preparation method of the high-density copper etched circuit board of the present embodiment is prepared from, compared to traditional circuit plate, greatly can reduce the area that connects up, improve wiring density.
In sum, the present invention adopts micro-nano imprint technique to define high-density circuit board figure, can prepare live width, line-spacing scope the hachure conductive circuit pattern of 2 μm ~ 50 μm; Adopt the high-density copper etched circuit board that the present invention is prepared from, compared to traditional circuit plate, greatly can reduce the area that connects up, improve wiring density.In addition, employing the present invention can reel-to-reel, at low cost production high-density copper etched circuit board.In addition, the shaping glue of high molecular polymer that the present invention utilizes impression to be shaped substitutes photoresist of the prior art, utilizes imprint process to substitute gold-tinted technique of the prior art, greatly reduces cost.So the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (10)
1. a preparation method for high-density copper etched circuit board, is characterized in that, the preparation method of described high-density copper etched circuit board at least comprises:
Prepare mould, described die surface has the mold graph matched with described high-density copper etched circuit board conductive circuit pattern to be prepared;
There is provided and cover copper substrate, described in cover copper substrate surfaces there is copper metal layer;
Shape layer is formed described covering in copper substrate;
In described shape layer, the shape layer figure matched with described mold graph is formed by described mould;
Cover the copper metal layer of copper substrate described in being transferred to from described shape layer by described shape layer figure, form described high-density copper etched circuit board conducting wire to be prepared.
2. the preparation method of high-density copper etched circuit board according to claim 1, is characterized in that, described cover copper substrate forms shape layer before, first form release layer described covering in copper substrate.
3. the preparation method of high-density copper etched circuit board according to claim 1 and 2, is characterized in that, the described concrete grammar preparing mould is:
Mold base is provided;
Described mold base forms structure sheaf, graphical described structure sheaf, form the mold graph matched with described high-density copper etched circuit board conductive circuit pattern to be prepared;
Wherein, the thickness of described structure sheaf is less than or equal to the thickness of described shape layer.
4. the preparation method of high-density copper etched circuit board according to claim 3, is characterized in that, when the line-spacing of described mold graph, live width are for being greater than 30 μm, adopts the graphical described structure sheaf of laser technique; When the line-spacing of described mold graph, live width are for being greater than 2 μm, adopt the graphical described structure sheaf of litho developing process.
5. the preparation method of high-density copper etched circuit board according to claim 1 and 2, is characterized in that, in described shape layer, formed the shape layer figure matched with described mold graph by described mould, concrete grammar is:
The mold graph of described mould is stamped on described shape layer, makes described shape layer be stamped shaping;
Keep the impressing state of the mold graph of described mould on described shape layer, process is cured to the described shape layer being stamped shaping;
After solidification process completes, be separated described mould from described shape layer, obtain the shape layer figure matched with described mold graph.
6. the preparation method of high-density copper etched circuit board according to claim 1, it is characterized in that, cover the copper metal layer of copper substrate described in being transferred to from described shape layer by described shape layer figure, form described high-density copper etched circuit board conducting wire to be prepared, concrete grammar is:
Remove the residual shape layer material being arranged in described shape layer figure trace clearance;
With described shape layer figure for mask, described in etching, cover the copper metal layer of copper substrate, form described high-density copper etched circuit board conducting wire to be prepared.
7. the preparation method of high-density copper etched circuit board according to claim 6, is characterized in that, the preparation method of described high-density copper etched circuit board also comprises:
Remove described shape layer figure, expose described high-density copper etched circuit board conducting wire to be prepared.
8. the preparation method of high-density copper etched circuit board according to claim 2, it is characterized in that, cover the copper metal layer of copper substrate described in being transferred to from described shape layer by described shape layer figure, form described high-density copper etched circuit board conducting wire to be prepared, concrete grammar is:
Remove the residual shape layer material being arranged in described shape layer figure trace clearance;
With described shape layer figure for mask, etch described release layer, form release layer figure;
With described shape layer figure and described release layer figure for mask, cover the copper metal layer of copper substrate described in etching, form described high-density copper etched circuit board conducting wire to be prepared.
9. the preparation method of high-density copper etched circuit board according to claim 8, is characterized in that, the preparation method of described high-density copper etched circuit board also comprises:
Remove described shape layer figure and described release layer figure, expose described high-density copper etched circuit board conducting wire to be prepared.
10. the preparation method of high-density copper etched circuit board according to claim 2, is characterized in that, described in cover copper substrate and also there is basalis, described copper metal layer is positioned on described basalis, and the material of described basalis is flexible or rigid substrate; The material of described shape layer and described release layer is curable high molecular polymer.
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| CN109003904A (en) * | 2018-07-13 | 2018-12-14 | 无锡天杨电子有限公司 | A kind of preparation method of rail traffic chip ceramic copper-clad plate surfacial pattern |
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Effective date of registration: 20160125 Address after: Jiading District Waigang town 201806 Shanghai Hui Fu Road No. 946 building 3 Room 203 Applicant after: SHANGHAI LIANGZI HUIJING ELECTRONIC CO., LTD. Address before: Songjiang District Minyi road 201262 Shanghai City No. 201 building 12 Room 401 Applicant before: Shanghai Lanpei New Material Technology Co., Ltd. |
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Application publication date: 20150805 |