201039025 六、發明說明： 【發明所屬之技術領域】 本發明係關於MVA ( Multi-domain Vertical Alignment )方式的液晶面板之製造方法，特別是關於在2枚玻璃基 板之間，封入混合使具有藉由電壓施加而配向的配向性之 液晶與反應於紫外線而引起聚合的光反應性物質之材料， 對此液晶面板照射紫外線使紫外線反應材料聚合而在玻璃 0 基板上形成配向膜的液晶面板之製造方法。 【先前技術】 液晶面板，係在2枚透光性基板（玻璃基板）之間封 入液晶的構造，於一方玻璃板上形成多數之主動元件（ TFT )與液晶驅動用電極，於其上形成配向膜。於另一方 玻璃基板，形成彩色濾光片、配向膜以及透明電極（ITO )。而於兩玻璃基板之配向膜間封入液晶，以密封劑封住 ❹ 周圍。 於這樣的構造之液晶面板，配向膜係供控制對電極間 施加電壓而使液晶進行配向之液晶配向。 從前，配向膜的控制係藉由摩擦而進行的，近年來有 許多新的配向控制技術的嘗試。 該方法，係於被設有TFT元件的第1玻璃基板與相對於 該第1玻璃基板的第2玻璃基板之間，預先封入混合具有藉 由電壓施加而配向的配向性之液晶’與反應於紫外線引起 聚合的光反應性物質（紫外線反應材料）之材料，對此液 -5- 201039025 晶面板施加電壓同時照射紫外線使紫外線反應材料聚合， 藉由固定接於玻璃基板的液晶（亦即表層之大致1分子層 )的方向’對液晶分子賦予傾斜角（例如，參照專利文獻 1 ) ° 根據此方法’不再需要具有從前賦予傾斜角所必要的 斜面之突起物，所以液晶面板的製造步驟可以簡化。亦即 ’可以削減液晶面板的製造成本或製造時間，同時還有不 具備突起物導致的陰影使開口率改善的優點。 於此新的進行配向控制的液晶面板之製造技術，關於 對混合液晶與紫外線反應材料的材料（腋下亦稱爲含紫外 線反應材料之液晶）照射紫外線的處理方法，有許多種方 案被提出。 (1 )於專利文獻2所記載之「液晶顯示元件裝置及其 製造方法」’依順序組合進行第一條件之紫外線照射，與 聚合速度比第一條件之紫外線照射還要大的第二條件之紫 外線照射之液晶顯示裝置之製造方法（參照專利文獻2之 段落〇〇1 2處之記載）被提出。 具體而言’以放射照度與積算強度第二條件比第一條 件更大的條件來進行紫外線照射。如此進行的話，在第一 條件之紫外線照射，聚合比較和緩，所以可抑制配向異常 的發生’其後即使提高聚合速度也不會有問題，可得沒有 配向異常’或者配向異常被抑制之液晶層。此外，在第二 條件之紫外線照射有記載著最好是使3〗〇nm附近的低波長 成分的比例較多（參照專利文獻2的段落003 7處之記載等 201039025 (2 )於專利文獻3所記載的「液晶顯示元件装置及其 製造方法」，揭示著「爲了不使液晶劣化，得知最好照射 使用濾光片除去不滿3 1 〇nm的短波長區域之紫外線」，「 但是因爲要使波長3 1 Onm之強度完全爲零的話很難得到所 期待的液晶配向，所以最好利用包含波長3 1 Onm的強度爲 〇·〇2〜〇_〇5mW/Cni2程度的光源」（參照專利文獻3之段落 0 00 19處之記載）之見解。 (3 )於專利文獻4所記載之「液晶顯示元件裝置及其 製造方法」’因爲短波長之紫外線在短時間對於獲得液晶 的垂直配向性是有利的’但是容易促進液晶分子等的變質 ，而長波長的紫外線’與此相反，不易促進液晶分子等的 變質’但要獲得液晶的垂直配向性需要很長的時間（參照 專利文獻4的段落003 1處之記載），所以提議3〇〇ηιη〜 3 5 Onm的波長成分（短波長的紫外線）的積算強度的範圍 〇 ，與3 5 0nm〜 400nm的波長成分（長波長的紫外線）的積 算強度的範圍。 [先行技術文獻] [專利文獻] [專利文獻1 ]日本專利特開2 0 0 3 — 1 7 7 4 0 8號公報 [專利文獻2]日本專利特開2〇〇5一 18ι582號公報 [專利文獻3]日本專利特開2〇〇5 — 3 3 8 6 1 3號公報 [專利文獻4]日本專利特開2〇〇6 — 5 8 75 5號公報 201039025 【發明內容】 [發明所欲解決之課題] 如前所述’對於混合液晶與紫外線反應材料之材料照 射紫外線的處理方法有許多種被提出，但我溫進行種種實 驗檢討之後’獲得如下所述之創見。 亦即’於使用如前所述的新的配向控制之液晶面板， 在液晶混合反應於紫外線引起聚合的紫外線反應材料，藉 由紫外線照射使此紫外線反應材料聚合。但是液晶中殘留 未聚合的紫外線反應材料的話，會在液晶面板產生畫面燒 焦或VHR (電壓保持率，v〇itage holding ratio)的降低， 對比降低等而使可信賴性降低。以下，將此稱爲由於紫外 線反應材料的殘存導致之可信賴性的降低。因此，混合於 液晶的紫外線反應材料’必須要不殘留地使其聚合。 爲了促進紫外線反應材料的聚合，只要使紫外線反應 材料會發生反應的波長的光照射得更多即可。一般而言以 糸外線聚合的反應材料，於波長3 6 〇 nm以下的區域具有高 的反應感度。另一方面，如專利文獻2,3所記載的，也說 過強力照射短波長的紫外線，特別是波長3丨〇 n m以下的光 的5舌’會使故晶負有損傷而變質劣化。 然而’此液晶的損傷、變質、劣化具體而言實際上到 底7H思味者什麼’此外其與被照射的波長之間到底有何關 連性則還未被瞭解，爲了要使紫外線反應材料毫不殘留地 進行聚合所必要的光的波長範圍、或短波長的光對液晶造 -8 - 201039025 成的具體影響仍未被充分解明。 亦即，在現在的時間點，對於在液晶混合紫外線反應 材料對此照射紫外線進行配向控制的Μ V A方式的液晶面板 的製造方法，要把怎麼樣的波長範圍的光，以怎麼樣的比 例進行照射，可以不降低液晶面板的可信賴幸而在短時間 內可完成配向處理仍是處於不爲人知的狀態。 本發明，係根據爲了不殘留前述紫外線反應材料而使 0 其聚合所必要的光的波長範圍，或短波長的光對液晶造成 的具體影響之知識而完成之發明，本發明之目的在於提供 對於在液晶混合紫外線反應材料對此照射紫外線進行配向 控制的MV A方式的液晶面板之製造方法，不招致液晶分解 導致的可信賴性的降低或紫外線反應材料的殘存導致的可 信賴性的降低，而可以在短時間內進行液晶面板的配向處 理之液晶面板之製造方法。 Q [供解決課題之手段] 本案發明人等，經過銳意檢討的結果，發現了以下事 項。 首先，針對現在一般使用的VA (垂直配向，Vertical Alignment )用的負介電率向異性之液晶（Merck公司製造 )，測定光的各波長之透過率。圖1顯示其結果之各波長 下液晶的透過率之圖。於該圖，橫軸爲波長（nm)，縱軸 爲透過率（％ )。 如該圖所示，可知液晶在波長3 3 Onm以上的區域透過 201039025 率爲1 〇 0 %爲透明，在波長3 2 0 nm以下的光則被吸 收的光會分解液晶分子。 亦即，照射波長在液晶吸收光的波長以下（ 更短的波長）的光的話液晶會分解’因此’引起 的可信賴性的降低。以下’將此稱爲由於液晶的 之可信賴性的降低。 此外，在此，把吸收前述光的波長之中’最 波長（在縮短光的波長時開始吸收光的波長）稱 波長，圖1所示之液晶其吸收端波長爲3 20nm。 如以上所述，V A用的液晶之具有負的介電 的液晶，其吸收端波長爲3 20nm，在3 2 0nm透過 低。 亦即，液晶面板之畫面的燒焦，電壓維持率 對比的降低等可信賴性的降低，應該是起因於由 述之吸收端波長以下的光所產生的液晶分子’以 前述之紫外線反應材料的殘存者。 其次，於Μ V A方式之液晶面板的製造，現在 含於一般使用的液晶的紫外線反應材料，測定對 長之吸光度。在光線被吸收的，亦即吸光度大的 紫外線反應材料產生聚合反應。圖2顯示其結果 下紫外線反應材料的吸光度。 於該圖，橫軸爲波長（nm )，縱軸爲紫外線 的吸光度（任意單位）。又，於測定使用混合液 線反應材料之材料，分成紫外線反應材料的濃度 收。被吸 比 3 2 0 n m 液晶面板 分解導致 長波長的 爲吸收端 率向異性 率開始降 的降低、 於照射前 及起因於 ，針對包 光的各波 波長區域 之各波長 反應材料 晶與紫外 在1 %以下 -10- 201039025 之例如o.l w% ( W%指重量百分比）的場合，與0.01 W%的 場合進行兩種類測定。材料的厚度爲1 5μηι以下。 如該圖所示，可知紫外線反應材料在濃度高（例如 〇_lW% )狀態，在波長3 70nm以下的區域吸收光。亦即， 紫外線反應材料的吸收端波長爲3 70ηηι，照射波長3 70nm 以下的光的話產生聚合反應。 但是，當進行聚合反應而反應材料的量變少時，在波 0 長33〇nm以上的光的照射下不會進行聚合反應。這應該是 因爲反應材料的濃度變低（聚合反應進行90%時，反應材 料的濃度變成〇.〇1 W% )時，外觀上長波長的光幾乎不被 吸收。 如以上所述，可知即使是在波長3 70nm以下的光產生 聚合反應的紫外線反應材料，若不照射波長33 Onm以下的 光的話，無法使剩下1 0 %的（濃度0.0 1 W %的）反應材料聚 合。 〇 亦即，爲了要不殘留紫外線反應材料地使其聚合，也 必須要照射即述液晶的吸收端波長（波長3 2 0 n m )以下的 光。 又，在比波長370nm更長的波長下產生聚合反應的紫 外線反應材料的使用也被考慮，但使用在比波長3 7〇nm更 長的波長下產生聚合反應的紫外線反應材料的話，會有自 然光也能引發聚合反應之虞，而因操作變得困難的理由， 使得MVA方式的液晶面板的製造作爲包含於液晶的紫外線 反應材料，如圖2所示使用在波長3 70nm以下的光才會產生 -11 - 201039025 聚合反應的紫外線反應材料。 前述之「使照射液晶的光的波長在其1] 3 2 Onm )以下的話液晶會分解」以及「不照 以下的光的話，無法聚合剩餘的1 0 %的反應 相反的狀況。 亦即，藉由前述實驗，爲了防止由於紫 的殘存導致可信賴性的降低，而使包含於液 應材料的全部都聚合反應，必須要照射呢 3 2 Onm )以下的光。但是，可知照射吸收端 )以下的光的話，由於液晶的分解產生可信 有必要以滿足此相反的要求的方式來照射光 因此，爲了使雙方都能成立，亦即，有 晶之吸收端波長（波長3 2 Onm )更短的波長 紫外線反應材料的殘存導致可信賴性的降低 成超過所有的紫外線反應材料產生聚合反應 不超過液晶的分解導致可信賴性降低發生之 範圍而進行照射。即使如此，僅僅在液晶的 波長320nm )以下的光，不能夠超過液晶分 性降低的情形發生之照射量的閾値，所以作 外線反應材料不殘留地聚合之用的照射量有 生由於紫外線反應材料的殘存導致可信賴性㈢ 此處’紫外線反應材料的大部分，使用 (亦即不會分解液晶的）液晶吸收端波長（ 以上的光使引起聚合反應，而使僅存的以吸 及收端波長（ 射波長320nm 材料」是正好 外線反應材料 晶的紫外線反 乏收端波長（ 波長（3 2 0 n m 賴性的降低， 〇 必要使前述液 的光，以不因 的方式，控制 的照射量，但 照射量閾値的 吸收端波長（ 解導致可信賴 爲使所有的紫 所不足，而產 β降低。 液晶不吸收的 波長320nm) 收端波長以上 -12- 201039025 的光不能實質反應的反應材料，改以液晶吸收端波長（波 長3 2 0nm )以下的光使其聚合反應。 因此，對液晶面板照射光時，使液晶的吸收端波長更 長波長的光（例如波長範圍3 20nm〜3 60nm的光）的照射 量，比波長比液晶的吸收端波長更短波長的光（例如波長 範圍300nm〜32〇nm的光）的照射量還要多。 藉此，可以使紫外線反應材料的大部分高速地聚合反 0 應，且使在吸收端波長以上的光不實質反應的反應材料， 以比較短的處理時間不殘留地聚合反應。 又，波長比液晶的吸收端波長更短的光的照射量，如 前所述，最好是以雖超過所有的紫外線反應材料產生聚合 反應的照射量，但不超過液晶的分解導致可信賴性降低的 情形會發生的照射量閾値之範圍的方式控制而進行照射。 因爲要使波長比前述吸收端波長更長的波長範圍之 3 2〇nm〜3 6〇nm的照射量’比波長比前述吸收端波長更短 〇 的波長範圍之300nm〜32〇nm的照射量更多，需要能夠以 這樣的比率照射光的光源。 作爲這樣的光源，可以舉出螢光體燈、碘受激準分子 燈。又’在碘受激準分子燈內封入氙的話，隨著氙的封入 量不同可以改變波長範圍3〇Onm〜320nm之放射照度，可 把照射量控制爲最佳。 根據以上所述’於本發明採用如下手段解決前述課題 〇201039025 VI. Technical Field of the Invention The present invention relates to a method for manufacturing a liquid crystal panel of an MVA (Multi-domain Vertical Alignment) method, and more particularly to encapsulating and mixing between two glass substrates. A method for producing a liquid crystal panel in which an alignment film is applied by a voltage and a photoreactive material which is polymerized in response to ultraviolet rays, and the liquid crystal panel is irradiated with ultraviolet rays to polymerize the ultraviolet ray reactive material to form an alignment film on the glass substrate. . [Prior Art] A liquid crystal panel has a structure in which liquid crystal is sealed between two light-transmissive substrates (glass substrates), and a plurality of active elements (TFTs) and liquid crystal driving electrodes are formed on one glass plate, and an alignment is formed thereon. membrane. On the other glass substrate, a color filter, an alignment film, and a transparent electrode (ITO) were formed. The liquid crystal is sealed between the alignment films of the two glass substrates, and the periphery of the crucible is sealed with a sealant. In the liquid crystal panel having such a structure, the alignment film is provided for controlling the liquid crystal alignment by applying a voltage between the electrodes to align the liquid crystal. Previously, the control of the alignment film was carried out by friction, and in recent years there have been many attempts at new alignment control techniques. In this method, between the first glass substrate on which the TFT element is provided and the second glass substrate on the first glass substrate, an alignment liquid crystal that is aligned by voltage application is mixed and reacted with a material which is a photoreactive substance (ultraviolet light-reactive material) which is caused by ultraviolet rays, and a liquid is applied to the liquid crystal of the liquid crystal of the liquid crystal, and the ultraviolet light-reactive material is polymerized by the ultraviolet light to be fixed to the liquid crystal of the glass substrate (that is, the surface layer) The direction of the substantially one molecular layer is given a tilt angle to the liquid crystal molecules (for example, refer to Patent Document 1). According to this method, a protrusion having a slope which is necessary for imparting a tilt angle is not required, so the manufacturing steps of the liquid crystal panel can be simplify. That is, it is possible to reduce the manufacturing cost or the manufacturing time of the liquid crystal panel, and at the same time, there is an advantage that the shadow caused by the protrusions is not provided to improve the aperture ratio. In the new manufacturing method of a liquid crystal panel for alignment control, there are many proposals for a method of irradiating ultraviolet rays to a material for mixing a liquid crystal and an ultraviolet ray reactive material (also referred to as a liquid crystal containing an ultraviolet ray-reactive material). (1) The "liquid crystal display device device and the method for manufacturing the same" described in Patent Document 2, in which the ultraviolet irradiation of the first condition is performed in combination, and the second condition that the polymerization rate is larger than the ultraviolet irradiation of the first condition A method of manufacturing a liquid crystal display device that emits ultraviolet light (refer to paragraph 1 of Patent Document 2) is proposed. Specifically, ultraviolet irradiation is performed under the condition that the second condition of the irradiance and the integrated intensity is larger than the first condition. When the ultraviolet ray is irradiated under the first condition, the polymerization is relatively gentle, so that the occurrence of the alignment abnormality can be suppressed. Then, even if the polymerization rate is increased, there is no problem, and the liquid crystal layer having no alignment abnormality or the alignment abnormality can be suppressed. . In addition, in the ultraviolet irradiation of the second condition, it is described that the ratio of the low-wavelength component in the vicinity of 3 〇 nm is high (refer to paragraph 003 7 of Patent Document 2, etc. 201039025 (2) in Patent Document 3 In the "liquid crystal display device device and its manufacturing method", it is disclosed that "in order to prevent deterioration of the liquid crystal, it is preferable to use a filter to remove ultraviolet rays in a short-wavelength region of less than 3 〇 nm." When the intensity of the wavelength 3 1 Onm is completely zero, it is difficult to obtain the desired alignment of the liquid crystal. Therefore, it is preferable to use a light source having a wavelength of 3 1 Onm and having a intensity of 〇·〇2 to 〇_〇5mW/Cni2" (refer to the patent) (3) The liquid crystal display element device and the method for manufacturing the same as described in Patent Document 4, because the short-wavelength ultraviolet rays acquire the vertical alignment of the liquid crystal in a short time. It is advantageous 'but it is easy to promote deterioration of liquid crystal molecules and the like, and long-wavelength ultraviolet rays are opposite to each other, and it is difficult to promote deterioration of liquid crystal molecules, etc., but it is necessary to obtain vertical alignment of liquid crystals. For a long time (refer to paragraph 003 1 of Patent Document 4), the range of the integrated intensity of the wavelength component (short-wavelength ultraviolet light) of 3〇〇ηιη~3 5 Onm is proposed, and 305 nm to 400 nm. The range of the integrated intensity of the wavelength component (ultra-wavelength ultraviolet light) [PRIOR ART DOCUMENT] [Patent Document 1] [Patent Document 1] Japanese Patent Laid-Open No. Hei 2 0 0 3 - 1 7 7 4 0 8 [Patent Document 2 [Patent Document 3] Japanese Patent Laid-Open Publication No. Hei 2-5- 3 3 8 6 1 3 [Patent Document 4] Japanese Patent Laid-Open No. 2-6- 5 8 75 No. 5, 201039025 [Disclosure of the Invention] [Problems to be Solved by the Invention] As described above, there are many kinds of treatment methods for irradiating ultraviolet light to materials of mixed liquid crystal and ultraviolet reactive materials, but I have conducted various experimental reviews. After that, the invention is obtained as follows: In the liquid crystal panel using the new alignment control as described above, the ultraviolet light-reactive material which is polymerized in the liquid crystal is reacted by ultraviolet rays, and the ultraviolet light is irradiated by ultraviolet rays. When the unpolymerized ultraviolet ray reactive material remains in the liquid crystal, the liquid crystal panel may cause burnt on the screen or a decrease in VHR (voltage retention ratio), and the contrast may be lowered to lower the reliability. Hereinafter, this is referred to as a decrease in reliability due to the residual of the ultraviolet ray-reactive material. Therefore, the ultraviolet ray-reactive material mixed in the liquid crystal must be polymerized without remaining. In order to promote the polymerization of the ultraviolet ray-reactive material, it is only necessary to make ultraviolet rays. The light of the wavelength at which the reaction material reacts may be irradiated more. In general, a reaction material polymerized by an external ray has a high reaction sensitivity in a region having a wavelength of 3 6 〇 nm or less. On the other hand, as described in Patent Documents 2 and 3, it is also said that the ultraviolet rays having a short wavelength are strongly irradiated, and in particular, the five tongues of light having a wavelength of 3 丨〇 n m or less cause deterioration of the crystal grains and deterioration. However, 'the damage, deterioration, and deterioration of this liquid crystal are actually what the 7H thinks are.' In addition, what is the relationship between it and the wavelength to be irradiated is not known yet, in order to make the ultraviolet reaction material not The specific wavelength influence of the wavelength range of light necessary for the residual polymerization or the short-wavelength light on the liquid crystal is still not fully explained. In other words, at what time is the VA system liquid crystal panel manufacturing method in which the liquid crystal hybrid ultraviolet ray-reactive material is subjected to the alignment control of the ultraviolet ray, what kind of wavelength range of light is to be Irradiation, it is possible to complete the alignment processing in a short time without lowering the reliability of the liquid crystal panel, and it is still in an unknown state. The present invention has been completed based on the knowledge of the wavelength range of light necessary for polymerization of the ultraviolet ray-reactive material, or the specific influence of light of a short wavelength on liquid crystal, and the object of the present invention is to provide In the method for producing an MV A liquid crystal panel in which the liquid crystal-mixed ultraviolet-ray-reactive material is subjected to alignment control by irradiation with ultraviolet rays, the reliability of the liquid crystal decomposition is not reduced, or the reliability of the ultraviolet-ray-reactive material is reduced. A method of manufacturing a liquid crystal panel in which alignment processing of a liquid crystal panel can be performed in a short time. Q [Means for Solving the Problem] The inventors of this case discovered the following items after careful review. First, the transmittance of each wavelength of light is measured for a liquid crystal of a negative dielectric ratio (manufactured by Merck) for VA (Vertical Alignment) which is generally used today. Fig. 1 is a graph showing the transmittance of liquid crystal at each wavelength as a result. In the figure, the horizontal axis represents the wavelength (nm), and the vertical axis represents the transmittance (%). As shown in the figure, it is understood that the liquid crystal has a transmittance of 1 〇 0% in a region having a wavelength of 3 3 Onm or more, and a light having a wavelength of 325 nm or less is decomposed into liquid crystal molecules. In other words, when the light having a wavelength below the wavelength of the liquid crystal absorption light (shorter wavelength) is irradiated, the liquid crystal is decomposed and the reliability caused by the reduction is lowered. Hereinafter, this is referred to as a decrease in the reliability of the liquid crystal. Further, here, the wavelength "the most wavelength (the wavelength at which the light is absorbed at the time of shortening the wavelength of light) among the wavelengths of the light is absorbed, and the wavelength of the absorption end of the liquid crystal shown in Fig. 1 is 3 20 nm. As described above, the liquid crystal having a negative dielectric of the liquid crystal for V A has a absorption end wavelength of 3 20 nm and a low transmission at 325 nm. In other words, the reliability of the burnt of the screen of the liquid crystal panel, the decrease in the voltage maintenance ratio, and the like, should be caused by the liquid crystal molecules generated by the light having a wavelength lower than the absorption end wavelength. Survivor. Next, in the manufacture of the liquid crystal panel of the V A type, the ultraviolet light-reactive material of the liquid crystal which is generally used is measured, and the absorbance of the long side is measured. The polymerization reaction is carried out in a UV-reactive material which is absorbed by light, that is, absorbance is large. Figure 2 shows the absorbance of the UV-responsive material under the results. In the figure, the horizontal axis represents the wavelength (nm), and the vertical axis represents the absorbance (arbitrary unit) of the ultraviolet light. Further, the material of the mixed liquid reaction material was measured and classified into the concentration of the ultraviolet ray reactive material. The decomposition of the liquid crystal panel by the absorption ratio of 3 2 0 nm leads to a decrease in the absorption end rate to the anisotropy rate of the long wavelength, and before and after the irradiation, the crystals and ultraviolet rays of the respective wavelengths of the wavelength regions of the enveloped light are When 1% or less -10- 201039025, for example, ol w% (W% means weight percentage), two types of measurement are performed with 0.01 W%. The thickness of the material is 1 5 μηι or less. As shown in the figure, it is understood that the ultraviolet ray-reactive material absorbs light in a region having a high concentration (for example, 〇_lW%) and a wavelength of 370 nm or less. That is, the wavelength of the absorption end of the ultraviolet ray-reactive material is 3 70 ηηι, and when the light having a wavelength of 3 70 nm or less is irradiated, a polymerization reaction occurs. However, when the polymerization reaction is carried out and the amount of the reaction material is small, the polymerization reaction does not proceed under irradiation with light having a wave length of 33 Å or more. This is because when the concentration of the reaction material becomes low (when the polymerization reaction is carried out at 90%, the concentration of the reaction material becomes 〇.〇1 W%), the light having a long wavelength in appearance is hardly absorbed. As described above, it is understood that even if the ultraviolet ray-reactive material which is polymerized by light having a wavelength of 3 to 70 nm or less does not emit light having a wavelength of 33 nm or less, it is impossible to make a residual of 10% (concentration of 0.01 W%). The reaction material is polymerized. That is, in order to polymerize the ultraviolet ray-reactive material without leaving it, it is necessary to irradiate light having a wavelength equal to or lower than the absorption end wavelength (wavelength 3 2 0 n m) of the liquid crystal. Further, the use of an ultraviolet-ray reactive material which generates a polymerization reaction at a wavelength longer than a wavelength of 370 nm is also considered, but natural light is used when an ultraviolet-ray reactive material which generates a polymerization reaction at a wavelength longer than a wavelength of 3 7 〇 nm is used. It is also possible to cause the polymerization reaction to occur, and the operation of the liquid crystal panel of the MVA type is used as the ultraviolet ray-reactive material contained in the liquid crystal, and the light having a wavelength of 3 to 70 nm or less is generated as shown in FIG. -11 - 201039025 UV-reactive material for polymerization. In the above-mentioned "the liquid crystal is decomposed when the wavelength of the light that illuminates the liquid crystal is 1] 3 2 Onm or less", and "the light of the following is not used, the remaining 10% of the reaction cannot be reversed. That is, In the above experiment, in order to prevent the decrease in the reliability due to the residual purple, it is necessary to irradiate all of the liquid-containing materials in the polymerization reaction, and it is necessary to irradiate light of 3 2 Onm or less. However, it is understood that the irradiation absorption end is below. In the case of light, it is necessary to illuminate the light in such a way that it is necessary to satisfy the opposite requirement, so that both sides can be established, that is, the wavelength of the absorption end of the crystal (wavelength 3 2 Onm ) is shorter. The remaining wavelength of the ultraviolet ray-reactive material causes a decrease in the reliability to be exceeded when the polymerization reaction of all the ultraviolet-ray-reactive materials does not exceed the range in which the decomposition of the liquid crystal is caused to cause a decrease in reliability. Even so, only at a wavelength of 320 nm of the liquid crystal) The following light does not exceed the threshold of the amount of irradiation that occurs when the liquid crystals are degraded, so the external reaction material does not remain in the ground. The amount of irradiation used is due to the survival of the UV-reactive material. (3) Here, the majority of the ultraviolet-ray-reactive materials use (that is, do not decompose the liquid crystal) the wavelength of the absorption end of the liquid crystal (the above light causes polymerization) And the only remaining wavelength at the end of absorption (the wavelength of 320 nm material) is just the wavelength of the ultraviolet light at the end of the reaction material (wavelength (the decrease of the wavelength of 3 2 0 nm, 〇 necessary to make the light of the above liquid In the way of not controlling, the amount of irradiation is controlled, but the wavelength of the absorption end of the irradiation threshold 値 (the solution leads to the reliability that all the purple is insufficient, and the production of β is lowered. The wavelength of the liquid crystal is not absorbed is 320 nm). 12-201039025 The reaction material whose light cannot be substantially reacted is polymerized by light having a wavelength below the absorption wavelength of the liquid crystal (wavelength of 2020 nm). Therefore, when the liquid crystal panel is irradiated with light, the wavelength of the absorption end of the liquid crystal is longer. The amount of light (for example, light in the wavelength range of 3 20 nm to 3 60 nm) is shorter than the wavelength of the absorption end of the liquid crystal (for example, the wavelength range is 300n). The amount of light of m to 32 〇nm is more than that. Therefore, most of the ultraviolet ray-reactive material can be polymerized at a high speed, and the reaction material which does not substantially react light at the absorption end wavelength can be used. Further, the polymerization reaction does not remain in a relatively short processing time. Further, as described above, the irradiation amount of light having a wavelength shorter than the absorption end wavelength of the liquid crystal is preferably an irradiation amount which exceeds all of the ultraviolet ray-reactive materials. However, the irradiation is controlled so as not to exceed the range of the irradiation threshold 値 which occurs when the decomposition of the liquid crystal is lowered, and the wavelength is longer than the wavelength of the absorption end by 3 2 〇 nm to 3 The irradiation amount of 6 〇 nm is larger than the irradiation amount of 300 nm to 32 〇 nm in the wavelength range in which the wavelength is shorter than the wavelength of the absorption end, and a light source capable of irradiating light at such a ratio is required. Examples of such a light source include a phosphor lamp and an iodine excimer lamp. Further, when ruthenium is enclosed in an iodine excimer lamp, the irradiance in the wavelength range of 3 〇 Onm to 320 nm can be changed depending on the amount of ruthenium enclosed, and the irradiation amount can be controlled optimally. According to the above, the following problems are solved by the present invention.
(1 )對把含有光反應性物質的液晶封入內部的MV A -13- 201039025 方式的液晶面板照射光，使前述光反應性物質反應’於前 述液晶面板的內部形成配向部的液晶面板之製造方法’其 於前述照射的光’包含波長比液晶的吸收端波長更長的光 ，與波長比液晶的吸收端波長更短的光’前述長波長的光 的照射量比前述短波長的光的照射量還要大。 (2)係於前述之（1)，使前述短波長的光的波長範 圍爲300nm〜320nm，前述長波長的光的波長範圍爲320nm 〜3 6 0 nm 〇 此處，前述液晶，係吸收端波長3 20nm (在波長 3 20nm以下的波長會吸收光）之具有負的介電率向異性者 ，作爲前述光反應性物質，使用光反應性物質的濃度不滿 1W%，厚度15μηι以下的狀態下，吸收端波長爲3 70nm (波 長3 7〇nm以下之波長會引起反應）者。 (3 )係於前述之（2 )，作爲照射前述光的光源，係 波長範圍在320nm〜360nm的放射照度比波長範圍在300nm 〜320nm的放射照度還要大的螢光體燈，碘受激準分子燈 ’或封入氙之碘受激準分子燈。這些登不會放射紅外光等 不要的光線，可以防止基板溫度的上升。 [發明之效果] 於本發明，可以得到以下的效果。 (1 )於照射·的光’包含波長比液晶的吸收端波長（ 例如波長3 20nm )更長波長的光，與波長比液晶的吸收端 波長更短波長的光’使前述長波長的光的照射量比前述短 -14- 201039025 波長的光的照射量還要大，使液晶的吸收端波長（例如波 長32〇nm)以下的光’以不因紫外線反應材料的殘存而產 生可信賴性降低的方式，在超過所有的紫外線反應材料產 生聚合反應的照射量，但不超過液晶分解導致可信賴性降 低的照射量的閾値的範圍內進行照射，可以在短時間內不 殘留紫外線反應材料地進行聚合，不會有紫外線反應材料 的殘存導致之可信賴性的降低，也不會有液晶的分解導致 0 之可信賴性的降低。 (2 )作爲對液晶面板照射光的光源，藉由使用具備 波長範圍在320nm〜360nm的放射照度比波長範圍在300nm 〜32〇nm的放射照度還要大的螢光體燈，碘受激準分子燈 ，封入氙之碘受激準分子燈，可以在短時間內確實實施此 程序。 【實施方式】 Q 圖3係顯示使用於本發明的液晶面板的製造方法之液 晶面板的製造裝置（紫外線照射裝置）之構成例。 液晶面板之製造裝置（紫外線照射裝置），具備載置 光照射部1與液晶面板3之工作台2。於工作台2，設有對載 置的液晶面板3施加電壓之機構2a。對載置於工作台2的液 晶面板3，如前述專利文獻1所記載般的施加電壓同時照射 來自光照射部1的光。 液晶面板3，係如前所述般在2枚透光性基板（玻璃基 板）3a，3b之間封入含紫外線反應材料的液晶3c之構造’該 -15- 201039025 圖係顯示槪念圖，但如前所述在玻璃板上，被形 主動元件（TFT )與液晶驅動用電極’彩色濾光 電極（IΤ Ο )，以密封劑3 d密封周圍。 光照射部1，具備光源（燈）1 a與反射鏡1 b 源（燈）1，包含液晶之吸收端波長之320nm以下 波長3 2 0 nm更短波長的光），與吸收端波長之被 以上的光（比波長320nm更長波長的光），{ 3 20nm以上的光的照射量比波長3 20nm以下的光 還要大者。又，波長在32Onm以下的光的成分’ ，是在雖超過所有的紫外線反應材料產生聚合反 量，但不超過液晶的分解導致可信賴性降低的照 之範圍進行照射。 作爲前述光源1 a，例如可以使用螢光體燈’ 分子燈，封入氙之碘受激準分子燈。 這些燈不會放射紅外光等配向處理所不要的 以防止基板溫度的上升。 圖4顯示前述螢光體燈的構成例，該圖顯示 軸的平面切斷之剖面圖。 螢光體燈1 〇具有內側管1 11與外側管1 1 2幾乎 同軸之約略二重管構造之容器（發光管）11 ’藉 1 1之兩端部1 1 A，1 1 B被密封，在內部形成圓筒狀 間s。於放電空間S被封入氙、氬、氪等稀有氣體 容器1 1係由石英玻璃所構成，於內周面被設 點玻璃層1 4，此低軟化點玻璃層1 4的內周面進而 成多數之 片，透明 ，作爲光 的光（比 3 2 Ο π m 吏用波長 的照射量 如前所述 應的照射 射量閾値 碘受激準 光線，可 以包含管 被配置爲 由此容器 的放電空 0 有低軟化 設有螢光 -16- 201039025 體層15。 此低軟化玻璃層1 4 ’例如使用硼砂酸鹽玻璃或鋁矽酸 鹽等硬質玻璃。此外，螢光體層1 5，例如使用附鈽過鋁酸 鎂鑭（La-Mg-Al-0:Ce)螢光體。 於內側管1 1 1的內周面設有電極1 2，於外側管1 1 2的外 周面設有網狀的電極13。這些電極12,13配置爲與容器11 之間中介著放電空間S。 0 電極丨2，13中介著導線Wll，W12連接電源裝置16。由 電源裝置1 6施加高頻電壓時，電極1 2, 1 3間被形成中介著 介電體（111,112)之放電（所謂介電體障壁放電），在 氙氣的場合產生波長1 72nm的紫外光。此處所得的紫外光 ，係螢光體激發用之光，藉由照射螢光體層，放射出中心 波長340nm附近的紫外光。 圖5係顯示螢光體燈的其他構成例。該圖（a )係顯示 以包含管軸的平面切斷之剖面圖，（b )係（a )之A-A線 Q 剖面圖。 於圖5，燈20具有一對電極22,23，電極22,23被配設於 容器（發光管）21的外周面，於電極22,23的外側設有保 護膜24。 對容器2 1的內周面之光射出方向側相反側的內面設有 紫外線反射膜25 (參照圖5 ( b ))，於其內周被設有低軟 化點玻璃層26，於此低軟化點玻璃層26的內周面’設有螢 光體層2 7。 其他的構成與圖4顯示者相同，被封入容器2 1內的放 -17- 201039025 電空間S的氣體、使用於螢光體層25的螢光體也相同。 對電極22，23施加高頻電壓時’在電極22,23間形成介 電體障壁放電，如前所述產生紫外光。藉此螢光體被激發 ，由螢光體層產生中心波長在34〇nm附近的紫外光，此光 以紫外線反射膜2 5反射，由未被設有紫外線反射膜2 5的開 口部份放射至外部。 圖6係顯示螢光體燈的分光反射頻譜。如該圖所示， 螢光體燈放射波長3〇〇nm〜3 60nm以上的光。 圖7係顯示碘受激準分子燈的構成例。該圖（a)係顯 示全體的外觀圖，（b )係（a )之A-A線剖面圖。 燈3 0，例如係藉由石英玻璃等介電體材料，具備剖面 爲約略方形的放電容器31。容器31在長邊方向的兩端附近 被配置密封構件3 4。此外，於容器3 1的上下壁面3 5,3 6之 分別的外表面，網狀的電極3 2,3 3以挾著被形成於容器31 內部的放電空間S及構成容器3 1的介電體材料而相對向的 方式被設置。 進而，於容器3 1的內部，例如包含以氧化矽爲主成分 的紫外線反射膜3 7被形成於對光射出方向側之壁面3 5相反 側的壁面3 6上，在放電空間S內產生的紫外線藉由紫外線 反射膜3 7被反射至光射出方向而由位於光射出方向側的壁 面3 5射出。 於容器3 1的內部除了碘氣體以外，作爲緩衝氣體還被 封入氬氣、氪氣。全壓爲40〜130kPa。其中氣體的濃度爲 〇.〇5〜1.0%。放射波長爲3 42nm程度。 -18- 201039025 又，相對於圖4,圖5所示之燈於容器內面具有營光體 ，圖7所示之燈不具有螢光體這一點有所不同，但利用中 介介電體的放電（介電體障壁放電）這一點則爲共通。 圖8係顯示碘受激準分子燈的分光反射頻譜。如該圖 所示，澳受激準分子燈放射波長310nm〜3 50nm的光。 封入氙之碘受激準分子燈，係於圖7所示之碘燈進而 封入特定量氙氣，以使放射與前述不同的波長的光。 ^ 封入氣體，除了碑氣、氣氣以外，作爲緩衝氣體還被 封入氪氣。全壓爲40〜130kPa。其中被封入的碘氣的濃度 爲0.05〜1.0%，氙氣的濃度爲〇.〇5〜2%程度。 放射波長於342nm與3 20nm具有峰値，但隨著碘氣與 氙氣的封入量之相對平衡而改變二者的放射量。 圖9係顯示封入氙之碘受激準分子燈的分光反射頻譜 。如該圖所示，封入氙之碘受激準分子燈放射波長3 1 Onm 〜3 5 0nm的光。又，封入氙之碘受激準分子燈，藉由改變 Q 封入的氙之量，而可以自由變化波長3 20nm附近的光量（ 峰値的大小）。 亦即，藉由增加波長320nm以下的光的成分可以使殘 存的紫外線反應材料更快聚合，可以縮短處理時間。 此外，使用此燈的話，，藉由改變氙的封入量，而可 以自由變化波長320nm附近的光量（峰値的大小）。 因此，可以自由設定波長範圍3 0 0 nm〜3 20nm的光， 與波長範圍32〇nm〜36〇nm的光的比率，此外波長320nm以 下的光的照射量，設定在超過所有的紫外線反應材料產生 -19- 201039025 聚合反應的照射量，但未超過液晶分解導致可信賴性降低 會發生的照射量閾値之範圍將容易地成爲可能。 後述之封入氙之氯受激準分子燈（XeCl受激準分子燈 )，係於圖7所示之燈，取代碘而改用氯，進而封入氙氣 者，藉此，可以放射不同波長的光。 具體而言，被封入氯氣、氙氣，作爲緩衝氣體還被封 入氬氣。全壓爲3 OkPa程度。其中，氯氣的濃度爲0.5〜 1 .〇%程度，氙氣的濃度爲90〜95%程度，氬氣的濃度被封 入1.0〜3.0%程度。放射波長爲3 08iim程度。 圖10係顯示XeCl受激準分子燈的分光反射頻譜。如該 圖所示，XeCl受激準分子燈，放射於波長3 08nm具有發光 峰値之波長290nm〜320nm的範圍的光。 又，圖4,圖5,圖7所示之燈都是進行一對電極間中介著 介電體的放電（所謂的介電體障壁放電）是共通的。 相對於圖4圖5所示之燈，在容器內面塗布螢光體，藉 由螢光體獲得所要的光，而圖7所示之碘受激準分子燈， 封入氙之碘受激準分子燈，封入氙之氯受激準分子燈則是 不使用螢光體，藉由這些封入物的發光而得到所要的光這 一點有所不同。 又，於圖4,圖5所示的構造之燈，取除螢光體的話， 當然可以做成碘受激準分子燈，封入氙之腆受激準分子燈 ，封入氙之氯受激準分子燈而使用，此外，圖7所示的構 造之燈，塗布螢光體的話，也可以僅以氙、氬、氪等稀有 氣體構成燈。 -20 - 201039025 爲了確認本發明之效果，進行以下的實驗，針對對包 含紫外線反應材料的液晶之照射量進行檢證。 首先，對包含紫外線反應材料的液晶，波長3 20nm以 下的光，進行確認必須在不超過液晶分解導致品質降低的 情形會發生的照射量閩値之範圍內進行照射之實驗。結果 顯示於表1。(1) Manufacture of a liquid crystal panel of a mode of MV A -13-201039025 in which a liquid crystal containing a photoreactive substance is sealed, and reacting the photoreactive substance to form a liquid crystal panel in which an alignment portion is formed inside the liquid crystal panel The method 'the light irradiated as described above' includes light having a wavelength longer than the absorption end wavelength of the liquid crystal, and light having a wavelength shorter than the absorption end wavelength of the liquid crystal. 'The irradiation amount of the long-wavelength light is longer than the short-wavelength light. The amount of exposure is even larger. (2) In the above (1), the wavelength of the short-wavelength light is in the range of 300 nm to 320 nm, and the wavelength of the long-wavelength light is in the range of 320 nm to 360 nm. Here, the liquid crystal is an absorption end. When the wavelength is 3 to 20 nm (the wavelength is 3 to 20 nm or less, the wavelength absorbs light), and the negative dielectric constant is used, the photoreactive substance is used in a state where the concentration of the photoreactive substance is less than 1 W% and the thickness is 15 μm or less. The absorption end wavelength is 3 70 nm (wavelength below 3 7 〇 nm will cause a reaction). (3) In the above (2), as a light source for irradiating the light, a luminescence lamp having a irradiance in a wavelength range of 320 nm to 360 nm and a irradiance in a wavelength range of 300 nm to 320 nm is iodine-excited. Excimer lamps' or encapsulated iodine-excited excimer lamps. These lights do not emit unwanted light such as infrared light, which prevents the substrate from rising in temperature. [Effects of the Invention] According to the present invention, the following effects can be obtained. (1) The light "irradiated" includes light having a wavelength longer than the absorption end wavelength of the liquid crystal (for example, a wavelength of 3 20 nm), and light having a wavelength shorter than a wavelength of the absorption end of the liquid crystal' to make the long-wavelength light The irradiation amount is larger than the irradiation amount of the light having the wavelength of the short -14 to 201039025, and the light having the absorption end wavelength of the liquid crystal (for example, a wavelength of 32 〇 nm or less) is reduced in reliability due to the absence of the ultraviolet ray reactive material. In the case where the amount of irradiation of the polymerization reaction is exceeded in all of the ultraviolet ray-reactive materials, the irradiation is performed within a range not exceeding the threshold of the amount of irradiation in which the liquid crystal decomposition causes a decrease in reliability, and the ultraviolet ray reactive material can be removed in a short time. The polymerization does not cause a decrease in the reliability of the residual ultraviolet-ray reactive material, and there is no decomposition of the liquid crystal to cause a decrease in the reliability of 0. (2) As a light source that illuminates the liquid crystal panel, iodine is excited by using a phosphor lamp having a radiance of a wavelength range of 320 nm to 360 nm and a irradiance larger than a wavelength range of 300 nm to 32 〇 nm. Molecular lamps, enclosed in iodine-excited excimer lamps, can be implemented in a short period of time. [Embodiment] FIG. 3 is a view showing a configuration example of a manufacturing apparatus (ultraviolet irradiation apparatus) for a liquid crystal panel used in the method for producing a liquid crystal panel of the present invention. The manufacturing apparatus (ultraviolet irradiation apparatus) of the liquid crystal panel includes the stage 2 on which the light irradiation unit 1 and the liquid crystal panel 3 are placed. The table 2 is provided with a mechanism 2a for applying a voltage to the liquid crystal panel 3 placed thereon. The liquid crystal panel 3 placed on the stage 2 is simultaneously irradiated with light from the light irradiation unit 1 by applying a voltage as described in the above Patent Document 1. The liquid crystal panel 3 has a structure in which a liquid crystal 3c containing an ultraviolet ray-reactive material is sealed between two light-transmissive substrates (glass substrates) 3a and 3b as described above. The -15-201039025 figure shows a mourning diagram, but As described above, on the glass plate, the shaped active element (TFT) and the liquid crystal driving electrode 'color filter electrode (IΤ Ο ) were sealed around with a sealant 3 d. The light-irradiating portion 1 includes a light source (lamp) 1 a and a mirror 1 b source (light) 1 including light having a wavelength of 320 nm or less and a wavelength shorter than 3 2 0 nm of the absorption end of the liquid crystal), and the wavelength of the absorption end is The above light (light having a wavelength longer than the wavelength of 320 nm) is larger than the light having a wavelength of 3 to 20 nm or more than the light having a wavelength of 3 to 20 nm or less. In addition, the component ' of the light having a wavelength of 32 nm or less is irradiated in a range in which the polymerization reaction amount is exceeded in all of the ultraviolet ray-reactive materials, but the reliability is not deteriorated beyond the decomposition of the liquid crystal. As the light source 1 a, for example, a phosphor lamp 'molecular lamp can be used, and an iodine-excited excimer lamp of krypton can be enclosed. These lamps do not emit unwanted radiation such as infrared light to prevent the substrate from rising in temperature. Fig. 4 shows an example of the configuration of the above-described phosphor lamp, which shows a cross-sectional view of the plane cut off of the shaft. The phosphor lamp 1 has a container (light-emitting tube) 11 having an approximately double-tube structure in which the inner tube 1 11 and the outer tube 1 1 2 are almost coaxial, and the end portions 1 1 A, 1 1 B of the 1 1 are sealed. A cylindrical space s is formed inside. The rare gas container 11 such as helium, argon or helium is sealed in the discharge space S, and is made of quartz glass. The inner peripheral surface is provided with a glass layer 14, and the inner peripheral surface of the low-softening point glass layer 14 is further formed. The majority of the film, transparent, as the light of the light (the irradiation dose of the wavelength of 3 2 Ο π m 如前所述 as described above, the irradiation dose threshold 値 iodine excited light, may contain the tube configured to discharge the container Empty 0 has low softening and is provided with fluorescent-16-201039025 body layer 15. This low-softening glass layer 14 4 ' uses, for example, hard glass such as borosilicate glass or aluminosilicate. In addition, the phosphor layer 15 is, for example, attached. The lanthanum aluminate lanthanum (La-Mg-Al-0:Ce) phosphor is disposed. The inner peripheral surface of the inner tube 1 1 1 is provided with an electrode 12 2 , and the outer peripheral surface of the outer tube 1 1 2 is provided with a mesh shape. The electrodes 13. These electrodes 12, 13 are arranged to interpose the discharge space S with the container 11. The electrodes 丨2, 13 are connected to the power supply unit 16 via the wires W11 and W12. When the high-frequency voltage is applied by the power supply unit 16, The electrodes 1 2, 1 3 are formed to intervene the discharge of the dielectric body (111, 112) (so-called dielectric barrier discharge) In the case of helium, ultraviolet light having a wavelength of 1 72 nm is generated. The ultraviolet light obtained here is a light for excitation of a phosphor, and ultraviolet light having a center wavelength of 340 nm is emitted by irradiating the phosphor layer. Another configuration example of the phosphor lamp. Fig. 5(a) is a cross-sectional view taken along a plane including a tube axis, and (b) is a cross-sectional view taken along line AA of Fig. 5 (a). The counter electrodes 22, 23, and the electrodes 22, 23 are disposed on the outer peripheral surface of the container (light-emitting tube) 21, and the protective film 24 is provided outside the electrodes 22, 23. The light-emitting direction side of the inner peripheral surface of the container 2 1 is provided. The inner surface of the opposite side is provided with an ultraviolet ray reflection film 25 (see Fig. 5 (b)), and a low softening point glass layer 26 is provided on the inner periphery thereof, and the inner peripheral surface of the low softening point glass layer 26 is provided with a fluorescing Light body layer 27. Other configurations are the same as those shown in Fig. 4, and the gas in the electric space S of the -17-201039025 sealed in the container 2 1 and the phosphor used in the phosphor layer 25 are also the same. 23 When a high-frequency voltage is applied, a dielectric barrier discharge is formed between the electrodes 22, 23, and ultraviolet light is generated as described above. The light body is excited, and ultraviolet light having a center wavelength of about 34 〇 nm is generated by the phosphor layer, and the light is reflected by the ultraviolet ray reflection film 25, and is radiated to the outside by the opening portion where the ultraviolet ray reflection film 25 is not provided. The 6-series shows the spectral reflectance spectrum of the phosphor lamp. As shown in the figure, the phosphor lamp emits light having a wavelength of 3 〇〇 nm to 3 60 nm or more. Fig. 7 shows an example of the configuration of an iodine excimer lamp. Figure (a) shows the overall appearance of the whole, and (b) shows a cross-sectional view taken along line AA of (a). The lamp 30 is made of, for example, a dielectric material such as quartz glass, and has a discharge vessel 31 having a substantially square cross section. The sealing member 34 is disposed in the vicinity of both ends of the container 31 in the longitudinal direction. Further, on the outer surfaces of the upper and lower wall surfaces 35, 36 of the container 31, the mesh electrodes 3 2, 3 3 are adjacent to the discharge space S formed inside the container 31 and the dielectric constituting the container 31. The body material is placed in a relative manner. Further, in the inside of the container 31, for example, an ultraviolet-ray reflective film 37 containing cerium oxide as a main component is formed on the wall surface 36 opposite to the wall surface 35 on the light-emitting direction side, and is generated in the discharge space S. The ultraviolet ray is reflected by the ultraviolet ray reflection film 37 to the light emission direction, and is emitted from the wall surface 35 located on the light emission direction side. In addition to the iodine gas, the inside of the container 3 1 is sealed with argon gas or helium gas as a buffer gas. The total pressure is 40~130kPa. The concentration of the gas is 〇.〇5~1.0%. The emission wavelength is about 3 42 nm. -18- 201039025 Moreover, with respect to Fig. 4, the lamp shown in Fig. 5 has a camping body on the inner surface of the container, and the lamp shown in Fig. 7 does not have a phosphor, but uses an intermediate dielectric. Discharge (dielectric barrier discharge) is common. Figure 8 is a graph showing the spectral reflectance spectrum of an iodine excimer lamp. As shown in the figure, the Australian excimer lamp emits light having a wavelength of 310 nm to 3 50 nm. The iodine-excited excimer lamp enclosed in krypton is attached to a iodine lamp shown in Fig. 7 and sealed with a specific amount of helium gas to emit light of a different wavelength from the foregoing. ^ The gas is sealed, and besides the monument and the gas, it is sealed as helium gas. The total pressure is 40~130kPa. The concentration of the iodine gas enclosed therein is 0.05 to 1.0%, and the concentration of the helium gas is about 5 to 2%. The emission wavelength has a peak at 342 nm and 3 20 nm, but the amount of radiation is changed with the relative balance of the amount of iodine gas and helium enclosed. Figure 9 is a diagram showing the spectral reflectance spectrum of an iodine-excited excimer lamp enclosed in helium. As shown in the figure, the iodine-encapsulated iridium lamp enclosed in krypton emits light having a wavelength of 3 1 Onm to 350 nm. In addition, the iodine-excited excimer lamp enclosed in krypton can change the amount of light near the wavelength of 3 20 nm (the size of the peak 自由) by changing the amount of enthalpy enclosed by Q. That is, by increasing the composition of light having a wavelength of 320 nm or less, the residual ultraviolet-ray reactive material can be polymerized faster, and the processing time can be shortened. Further, when this lamp is used, the amount of light (the magnitude of the peak 波长) in the vicinity of the wavelength of 320 nm can be freely changed by changing the amount of enthalpy enclosed. Therefore, it is possible to freely set the ratio of the light in the wavelength range of 300 nm to 3 20 nm to the light in the wavelength range of 32 〇 nm to 36 〇 nm, and the irradiation amount of the light having the wavelength of 320 nm or less, in excess of all the ultraviolet ray reactive materials. It is easy to produce an irradiation amount of the polymerization reaction of -19-201039025, but the range of the irradiation amount threshold which does not exceed the reliability of the liquid crystal decomposition, which is likely to occur. A chlorine-excited excimer lamp (XeCl excimer lamp) enclosed in sputum, which is described later, is a lamp shown in Fig. 7. Instead of iodine, chlorine is used instead, and then helium gas is sealed, whereby light of different wavelengths can be emitted. . Specifically, chlorine gas and helium gas are sealed, and argon gas is also sealed as a buffer gas. The total pressure is about 3 OkPa. Among them, the concentration of chlorine gas is 0.5 to 1%, the concentration of helium is about 90 to 95%, and the concentration of argon is sealed to the extent of 1.0 to 3.0%. The emission wavelength is about 3 08iim. Figure 10 shows the spectral reflectance spectrum of a XeCl excimer lamp. As shown in the figure, a XeCl excimer lamp is emitted at a wavelength of 308 nm having a wavelength of 290 nm to 320 nm of a light-emitting peak. Further, the lamps shown in Fig. 4, Fig. 5, and Fig. 7 are common in that discharge of a dielectric body (so-called dielectric barrier discharge) is performed between a pair of electrodes. With respect to the lamp shown in FIG. 4 and FIG. 5, a phosphor is coated on the inner surface of the container, and the desired light is obtained by the phosphor, and the iodine excimer lamp shown in FIG. 7 is sealed with iodine excited. Molecular lamps, chlorine-excited excimer lamps enclosed in ruthenium, do not use phosphors, and the desired light is obtained by the luminescence of these enclosures. Moreover, in the lamp of the structure shown in FIG. 4 and FIG. 5, if the phosphor is removed, it can of course be made into an iodine-excited excimer lamp, and the excimer lamp enclosed in the crucible is sealed, and the chlorine in the crucible is sealed. In the lamp of the structure shown in Fig. 7, when the phosphor is applied, the lamp may be formed only by a rare gas such as helium, argon or helium. -20 - 201039025 In order to confirm the effect of the present invention, the following experiment was conducted to verify the amount of irradiation of the liquid crystal containing the ultraviolet ray-reactive material. First, an experiment in which the liquid crystal containing the ultraviolet ray-reactive material and the light having a wavelength of 3 to 20 nm are irradiated within a range that does not exceed the amount of irradiation which occurs when the quality of the liquid crystal is decomposed is lowered. The results are shown in Table 1.
[表1: 燈的種類 照射量 液晶之 可信賴性 (照射的光的波長範圍） J/cm2 分解 1 XeCl受激準分子燈 20 有 X 2 XeCI受激準分子燈 15 有 X 3 XeCl受激準分子燈 10 有 Δ 4 XeCl受激準分子燈 5 Μ J t 〇 5 XeC授激準分子燈 2 Μ 〇 6 XeC授激準分子燈 1 Μ Δ 7 無照射 0 Μ ^\\\ X 表1係含有0.1 W%的濃度的現在一般使用的當照射前 述波長3 70nm以下的光時會發生聚合反應的丙烯酸酯系紫 外線反應材料（DIC公司製造）之液晶（Merck公司製造 MJ961213 )，以約10J/cm2的照射量照射來自超高壓水銀 燈的光（藉由濾光片切掉波長3 20nm以下的部分之主要波 長在3 5 0nm〜3 7 0nm的範圍的光），對於紫外線反應材料 的殘存率成爲10% (相當於濃度〇.〇1 W% )者，改變照射量 照射來自XeCl激發準分子燈的光，而顯示針對對照射量有 無液晶的分解與面板的可信賴性（畫面的燒焦或對比的降 -21 - 201039025 低）進行調查的結果。 X e C 1受激準分子燈，如前所述係封入氙氣與氯氣的受 激準分子燈，如圖10所示於波長3 08nm具有發光的峰値， 放射波長290nm〜320nm的範圍的光。 如前述表1所示，把來自XeCl受激準分子燈的波長 3 2 0 n m以下的光，以1 0的照射量進行照射的話’產生液晶 的分解，可觀察到因此導致的面板的可信賴性降低。 另一方面，照射量爲〇 (無照射）〜IJ/cm2的場合， 雖未發生液晶的分解，但面板的可信賴性降低。這應該是 因爲紫外線反應材料的殘存導致發生可信賴性的降低。 接著以2J/cm2〜5J/Cm2的之照射量進行照射的話，不 產生液晶的分解，面板的可信賴性也良好。此情形，顯示 所有的紫外線反應材料產生聚合反應，未有殘留紫外線反 應材料。 由以上可知，波長3 20nm以下的光之，以不因紫外線 反應材料的殘存導致可信賴性的降低的方式，控制成雖超 過所有的紫外線反應材料產生聚合反應的照射量，但不超 過液晶的分解導致可信賴性降低發生之照射量閾値的範圍 ，爲2J/cm2〜5J/cm2之照射量。 其次，爲了調查藉由波長3 20nm以上的光，以使紫外 線反應材料的大部分反應（聚合）掉，同時不產生紫外線 反應材料的殘存導致可信賴性的降低的方式，控制成雖超 過所有的紫外線反應材料產生聚合反應的照射量，但不超 過液晶的分解導致可信賴性降低發生之照射量閾値的範圍 -22 - 201039025 內照射波長3 2 0 n m以下的光的光源燈或照射程序之目的進 行了以下實驗。結果顯示於表2。 [表2: 燈的種類 (照射的光的波長範圍） 照射量 J/cm2 液晶之 分解 紫外線反應材料 之殘存率 可信賴性 1 XeCl受激準分子燈 20 有 0% X 2 螢光體燈 20 Am. Μ 0% 〇 3 碘受激準分子燈 20 ^ΤΤΓ ΙΜΓ /ί\\ 1% 〇 4 封入氙之碘受激準分子燈 20 Μ /\\\ 0% 〇 表2係對含有0.1 W %的濃度的含有〇 · 1 W %的濃度的現在 一般使用的照射前述波長3 7 0 n m以下的光就會產生聚合反 應的丙烯酸酯系紫外線反應材料（DIC公司製）之液晶（ Merck公司製造之MJ961 213) ’以下述之條件照射光’針 對液晶分解的有無與面板的可信賴性（畫面的燒焦或電壓 維持率的降低、對比的降低）進行調查。 Ο 〈條件1〉以2〇J/cm2的照射量照射來自XeCl激發準分 子燈的波長290nm〜320nm的光。 〈條件2〉以20〗/cm2的照射量照射來自螢光體燈的光 〇 又，螢光體燈如前述圖6所示放射波長3〇〇nm〜36〇nm 以上的光。 〈條件3〉以2〇J/cm2的照射量照射來自姚受激準分子 燈的光。 硕受激準分子燈，如前述圖8所不放射波長3 1 〇n m〜 -23- 201039025 3 5 Onm的光。 〈條件4〉以20J/cm2的照射量照射來自封入氙之碘受 激準分子燈的光。 封入氙之碘受激準分子燈，如前述圖9所示’放射波 長310nm〜350nm的光。 如前述所述，在條件1，紫外線反應材料沒有殘存， 但發生液晶的分解，面板的可信賴性降低。在條件2 ’也 無液晶的分解也無紫外線反應材料的殘存，面板的可信賴 11 * ^ 性良好。在條件3，無液晶的分解’紫外線反應材料的殘 存爲1 %，面板的可信賴性良好。在條件4，也無液晶的分 解也無紫外線反應材料的殘存，面板的可信賴性良好。 如此般，使用螢光體燈，碘受激準分子燈，封入氙之 碘受激準分子燈的話，也無液晶的分解導致之可信賴性的 降低，也無紫外線反應材料的殘存導致可信賴性的降低， 而可以製造液晶面板。 表3顯示以前述使用的螢光體燈，碘受激準分子燈， Ο 封入氣之碘受激準分子燈之波長300nm〜360nm的光量爲 100時之波長300〜320nm與波長320〜360nm的比率。 [表3] 燈 300-320nm 320-360nm 螢光體燈 11 89 碘受激準分子燈 6 94 封入氙之拂受激準分子燈 20 80 • 24 - 201039025 如前述所述’使用螢光體燈，碘受激準分子燈，封入 氙之碘受激準分子燈的話’可以也無液晶分解導致之可信 賴性降低，也無紫外線反應材料的殘存導致之可信賴性的 降低，而製造液晶面板，波長300〜320nm與波長320〜 360nm的比率，在如前述般的場合，藉由波長32〇nm以上 的光’使紫外線反應材料的大部分反應（聚合），同時以 不發生紫外線反應材料的殘存導致可信賴性降低的方式， 0 能夠以雖超過使所有的紫外線反應材料產生聚合反應的照 射量，但不超過液晶分解導致可信賴性降低的照射量之閾 値的範圍內照射波長320nm以下的光。 【圖式簡單說明】 圖1顯示對各光的波長之液晶的透過率。 圖2顯示對各光的波長之紫外線反應材料之吸光度。 圖3係顯示使用於本發明的液晶面板的製造方法之液 Q 晶面板的製造裝置之構成例。 圖4係顯示螢光體燈的構成例。 圖5係顯示螢光體燈的其他構成例。 圖6係顯示螢光體燈的分光放射頻譜。 圖7係顯示碘受激準分子燈的構成例。 圖8係顯示碘受激準分子燈的分光放射頻譜。 圖9係顯示封入氙的碘受激準分子燈的分光放射頻譜 〇 圖1 〇係顯示X e C 1受激準分子燈的分光放射頻譜。 -25- 201039025 【主要元件符號說明】 1 :光照射部 1 a :光源（燈） 1 b :反射鏡 2 :工作台 2 a :施加電壓的機構 3 :液晶面板 3a,3b :透光性基板（玻璃基板） 3 c :含紫外線反應材料之液晶 3 d :密封劑 10,20,30 :燈 1 1 :容器（發光管） 1 2,1 3 :電極 15,27 :螢光體層 21 :容器（發光管） 22,23 ：電極 3 1 :放電容器 3 2，3 3 :電極 24,3 7 :紫外線反射膜 -26-[Table 1: Type of lamp Irradiation liquid crystal reliability (wavelength range of irradiated light) J/cm2 Decomposition 1 XeCl excimer lamp 20 X 2 XeCI excimer lamp 15 X 3 XeCl excited Excimer lamp 10 has Δ 4 XeCl excimer lamp 5 Μ J t 〇 5 XeC excitation excimer lamp 2 Μ 〇 6 XeC excitation excimer lamp 1 Μ Δ 7 No illumination 0 Μ ^\\\ X Table 1 An acrylate-based ultraviolet-ray-reactive material (manufactured by DIC Corporation) liquid crystal (MJ961213 manufactured by Merck Co., Ltd.) which is generally used when the light having a wavelength of 3 70 nm or less is irradiated at a concentration of 0.1 W%. The amount of irradiation of /cm2 illuminates the light from the ultrahigh pressure mercury lamp (the light having a wavelength of 3 to 20 nm or less is cut by a filter in a range of 350 nm to 370 nm), and the residual ratio of the ultraviolet ray reactive material When it is 10% (corresponding to the concentration 〇.〇1 W%), the amount of irradiation is changed to illuminate the light from the XeCl-excited excimer lamp, and it is shown that the decomposition of the liquid crystal and the reliability of the panel are observed for the amount of irradiation (scoke of the picture) Or contrast drop - 201039025 low ) The results of the investigation. The X e C 1 excimer lamp is an excimer lamp sealed with helium gas and chlorine gas as described above, and has a peak of luminescence at a wavelength of 3 08 nm as shown in FIG. 10, and emits light in a wavelength range of 290 nm to 320 nm. . As shown in the above-mentioned Table 1, when the light having a wavelength of 3,200 nm or less from the XeCl excimer lamp is irradiated with an irradiation dose of 10, the liquid crystal is decomposed, and the reliability of the panel can be observed. Reduced sex. On the other hand, when the irradiation amount is 〇 (no irradiation) to IJ/cm 2 , the decomposition of the liquid crystal does not occur, but the reliability of the panel is lowered. This should be because the residual of the ultraviolet reactive material causes a decrease in reliability. When the irradiation is carried out at an irradiation dose of 2 J/cm 2 to 5 J/cm 2 , the decomposition of the liquid crystal does not occur, and the reliability of the panel is also good. In this case, it was shown that all of the ultraviolet ray-reactive materials produced a polymerization reaction, and no ultraviolet ray reaction material remained. From the above, it is understood that the light having a wavelength of 3 to 20 nm or less is controlled so as not to exceed the absorption amount of the ultraviolet ray-reactive material, but does not exceed the liquid crystal, so that the reliability of the ultraviolet ray-reactive material is not lowered. The range of the irradiation amount threshold 发生 at which the reliability is lowered due to the decomposition is an irradiation amount of 2 J/cm 2 to 5 J/cm 2 . Next, in order to investigate the fact that most of the ultraviolet ray reactive material is reacted (polymerized) by light having a wavelength of 3 20 nm or more, and the reliability of the ultraviolet ray reactive material is not generated, the reliability is lowered. The ultraviolet ray-reactive material generates an irradiation amount of the polymerization reaction, but does not exceed the range of the irradiation threshold 値 which causes the decrease in reliability due to the decomposition of the liquid crystal -22 - 201039025 The purpose of the light source lamp or the irradiation program for the light having an internal irradiation wavelength of 3 2 0 nm or less The following experiment was performed. The results are shown in Table 2. [Table 2: Type of lamp (wavelength range of irradiated light) Irradiation amount J/cm2 Residual rate of liquid crystal decomposition of UV-responsive material Reliability 1 XeCl excimer lamp 20 0% X 2 Fluorescent lamp 20 Am. Μ 0% 〇3 Iodine excimer lamp 20 ^ΤΤΓ ΙΜΓ /ί\\ 1% 〇4 Iodine excimer lamp enclosed in 20 20 Μ /\\\ 0% 〇 Table 2 is containing 0.1 W A liquid crystal of acrylate-based ultraviolet-ray reactive material (manufactured by DIC Corporation) which generates a polymerization reaction at a concentration of 〇·1 W%, which is generally used at a concentration of 〇·1 W%. MJ961 213) 'Illuminating light under the following conditions' investigates the presence or absence of liquid crystal decomposition and the reliability of the panel (the reduction of the burnt or voltage maintenance ratio of the screen and the decrease in contrast).条件 <Condition 1> Light having a wavelength of 290 nm to 320 nm from a XeCl-excited quasi-molecular lamp was irradiated with an irradiation amount of 2 〇 J/cm 2 . <Condition 2> The light from the phosphor lamp is irradiated with an irradiation amount of 20 Å/cm 2 . Further, the phosphor lamp emits light having a wavelength of 3 〇〇 nm to 36 〇 nm or more as shown in Fig. 6 described above. <Condition 3> Light from a Yao excimer lamp was irradiated with an irradiation amount of 2 〇 J/cm 2 . The so-called excimer lamp, as shown in Figure 8 above, does not emit light at a wavelength of 3 1 〇n m~ -23- 201039025 3 5 Onm. <Condition 4> Light from the iodine excimer lamp enclosed in krypton was irradiated with an irradiation amount of 20 J/cm2. The iodine-excited excimer lamp enclosed in ruthenium, as shown in Fig. 9, has a radiation wavelength of 310 nm to 350 nm. As described above, in Condition 1, the ultraviolet ray reactive material does not remain, but decomposition of the liquid crystal occurs, and the reliability of the panel is lowered. In the condition 2', there is no decomposition of the liquid crystal and no residual UV-ray reactive material, and the panel is reliable 11 * ^. In the condition 3, no decomposition of the liquid crystal was carried out, and the residual amount of the ultraviolet ray-reactive material was 1%, and the reliability of the panel was good. In the condition 4, the liquid crystal was not decomposed and the ultraviolet reactive material remained, and the reliability of the panel was good. In this way, when a phosphor lamp, an iodine excimer lamp, or an iodine-excited excimer lamp is enclosed, the reliability of the liquid crystal is not reduced, and the reliability of the ultraviolet-reactive material is not reliable. The liquidity panel can be manufactured by reducing the sex. Table 3 shows the phosphor lamp used in the above, the iodine excimer lamp, and the iodine excimer lamp sealed with a gas having a wavelength of 300 nm to 360 nm and a wavelength of 300 to 320 nm and a wavelength of 320 to 360 nm. ratio. [Table 3] Lamp 300-320nm 320-360nm Fluorescent lamp 11 89 Iodine excimer lamp 6 94 Enclosed 拂 拂 excimer lamp 20 80 • 24 - 201039025 As described above, 'Using a phosphor lamp In the case of an iodine-excited excimer lamp, if the iodine-excited excimer lamp is enclosed, it can be reduced without the reliability of liquid crystal decomposition, and the reliability of the UV-reactive material is not reduced, and the liquid crystal panel is manufactured. The ratio of the wavelength of 300 to 320 nm to the wavelength of 320 to 360 nm, in the case of the above, the majority of the ultraviolet ray reactive material is reacted (polymerized) by the light having a wavelength of 32 〇 nm or more, and the ultraviolet ray reactive material is not generated. In the case where the reliability is lowered, the reliability is 0, and the irradiation wavelength is 320 nm or less in a range that exceeds the irradiation amount of the polymerization reaction in which all of the ultraviolet-ray-reactive materials are generated, but does not exceed the reliability of the liquid crystal decomposition. Light. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 shows the transmittance of a liquid crystal at a wavelength of each light. Figure 2 shows the absorbance of an ultraviolet reactive material for the wavelength of each light. Fig. 3 is a view showing an example of the configuration of a manufacturing apparatus of a liquid Q crystal panel used in the method for producing a liquid crystal panel of the present invention. Fig. 4 is a view showing an example of the configuration of a phosphor lamp. Fig. 5 shows another configuration example of the phosphor lamp. Figure 6 shows the spectral emission spectrum of a phosphor lamp. Fig. 7 is a view showing an example of the configuration of an iodine excimer lamp. Figure 8 is a graph showing the spectral emission spectrum of an iodine excimer lamp. Figure 9 shows the spectral emission spectrum of an iodine excimer lamp enclosed in 〇. Figure 1 shows the spectral emission spectrum of the X e C 1 excimer lamp. -25- 201039025 [Explanation of main component symbols] 1 : Light irradiation unit 1 a : Light source (lamp) 1 b : Mirror 2 : Table 2 a : Mechanism for applying voltage 3 : Liquid crystal panel 3a, 3b : Translucent substrate (glass substrate) 3 c : liquid crystal containing ultraviolet light-reactive material 3 d : sealant 10, 20, 30: lamp 1 1 : container (light-emitting tube) 1 2, 1 3 : electrode 15, 27: phosphor layer 21: container (light-emitting tube) 22, 23: electrode 3 1 : discharge vessel 3 2, 3 3 : electrode 24, 3 7 : ultraviolet reflection film -26-