TW201034933A - Microelectromechanical device with isolated microstructures and method of producing same - Google Patents

Microelectromechanical device with isolated microstructures and method of producing same Download PDF

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Publication number
TW201034933A
TW201034933A TW098141176A TW98141176A TW201034933A TW 201034933 A TW201034933 A TW 201034933A TW 098141176 A TW098141176 A TW 098141176A TW 98141176 A TW98141176 A TW 98141176A TW 201034933 A TW201034933 A TW 201034933A
Authority
TW
Taiwan
Prior art keywords
insulating
layer
nitride
trench
microstructures
Prior art date
Application number
TW098141176A
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English (en)
Chinese (zh)
Inventor
Lisa Z Zhang
Lisa H Karlin
Ruben B Montez
Woo-Tae Park
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of TW201034933A publication Critical patent/TW201034933A/zh

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
    • B81C1/00698—Electrical characteristics, e.g. by doping materials

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)
TW098141176A 2008-12-19 2009-12-02 Microelectromechanical device with isolated microstructures and method of producing same TW201034933A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/340,202 US7943525B2 (en) 2008-12-19 2008-12-19 Method of producing microelectromechanical device with isolated microstructures

Publications (1)

Publication Number Publication Date
TW201034933A true TW201034933A (en) 2010-10-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW098141176A TW201034933A (en) 2008-12-19 2009-12-02 Microelectromechanical device with isolated microstructures and method of producing same

Country Status (5)

Country Link
US (1) US7943525B2 (enExample)
JP (1) JP5602761B2 (enExample)
CN (1) CN102257609B (enExample)
TW (1) TW201034933A (enExample)
WO (1) WO2010080229A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012122878A1 (zh) * 2011-03-15 2012-09-20 迈尔森电子（天津）有限公司 集成惯性传感器与压力传感器及其形成方法
CN108470679A (zh) * 2011-01-25 2018-08-31 Ev 集团 E·索尔纳有限责任公司 用于永久接合晶片的方法
US10173887B2 (en) 2013-03-15 2019-01-08 Robert Bosch Gmbh Epi-poly etch stop for out of plane spacer defined electrode

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US20100289065A1 (en) * 2009-05-12 2010-11-18 Pixart Imaging Incorporation Mems integrated chip with cross-area interconnection
TW201109267A (en) * 2009-09-08 2011-03-16 Jung-Tang Huang A general strength and sensitivity enhancement method for micromachined devices
TWI388496B (zh) * 2010-01-12 2013-03-11 鉅晶電子股份有限公司 微機電系統結構及其製造方法
EP2426083A3 (en) * 2010-09-03 2013-11-13 Domintech Co., LTD. Mems sensor package
US8673756B2 (en) * 2011-04-14 2014-03-18 Robert Bosch Gmbh Out-of-plane spacer defined electrode
US8610222B2 (en) 2011-04-18 2013-12-17 Freescale Semiconductor, Inc. MEMS device with central anchor for stress isolation
US8846129B2 (en) * 2012-02-13 2014-09-30 Taiwan Semiconductor Manufacturing Company, Ltd. Biological sensing structures and methods of forming the same
US8828772B2 (en) * 2012-03-05 2014-09-09 Taiwan Semiconductor Manufacturing Co., Ltd. High aspect ratio MEMS devices and methods for forming the same
US9079763B2 (en) 2013-04-22 2015-07-14 Freescale Semiconductor, Inc. MEMS device with stress isolation and method of fabrication
US9034679B2 (en) 2013-06-25 2015-05-19 Freescale Semiconductor, Inc. Method for fabricating multiple types of MEMS devices
DE102014202820A1 (de) * 2014-02-17 2015-08-20 Robert Bosch Gmbh Schichtenanordnung für ein mikromechanisches Bauelement
US9617142B1 (en) * 2015-09-30 2017-04-11 Mems Drive, Inc. MEMS grid for manipulating structural parameters of MEMS devices
EP3153851B1 (en) 2015-10-06 2024-05-01 Carrier Corporation Mems die with sensing structures
CN105890827B (zh) * 2016-01-18 2019-05-21 广东合微集成电路技术有限公司 一种电容式压力传感器及其制造方法
US9950920B2 (en) * 2016-01-22 2018-04-24 United Microelectronics Corp. Micro-electro-mechanical system structure and method for forming the same
KR102088584B1 (ko) * 2018-11-28 2020-03-12 한국과학기술원 Mems 멤브레인 구조체 및 그 제조방법
DE102020202262A1 (de) * 2020-02-21 2021-08-26 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer nanoskaligen Kanalstruktur
IT202000011755A1 (it) * 2020-05-20 2021-11-20 St Microelectronics Srl Procedimento di fabbricazione di un dispositivo micro-elettro-meccanico, in particolare sensore di movimento con comando/rilevazione di tipo capacitivo, e relativo dispositivo mems
CN113387319B (zh) * 2021-06-11 2023-07-14 中国兵器工业集团第二一四研究所苏州研发中心 基于多通孔硅基板的mems芯片封装结构及其制备方法
CN116902904B (zh) * 2023-07-14 2026-05-19 芯联集成电路制造股份有限公司 一种mems器件、mems器件的制备方法和电子装置

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US5580815A (en) * 1993-08-12 1996-12-03 Motorola Inc. Process for forming field isolation and a structure over a semiconductor substrate
US6121552A (en) * 1997-06-13 2000-09-19 The Regents Of The University Of Caliofornia Microfabricated high aspect ratio device with an electrical isolation trench
DE69942486D1 (de) * 1998-01-15 2010-07-22 Cornell Res Foundation Inc Grabenisolation für mikromechanische bauelemente
JP4214584B2 (ja) * 1998-11-27 2009-01-28 株式会社デンソー 半導体力学量センサおよびその製造方法
US6395644B1 (en) * 2000-01-18 2002-05-28 Advanced Micro Devices, Inc. Process for fabricating a semiconductor device using a silicon-rich silicon nitride ARC
DE10065013B4 (de) * 2000-12-23 2009-12-24 Robert Bosch Gmbh Verfahren zum Herstellen eines mikromechanischen Bauelements
KR100443126B1 (ko) * 2002-08-19 2004-08-04 삼성전자주식회사 트렌치 구조물 및 이의 형성 방법
US6747338B1 (en) * 2002-11-27 2004-06-08 Analog Devices, Inc. Composite dielectric with improved etch selectivity for high voltage MEMS structures
US6770506B2 (en) * 2002-12-23 2004-08-03 Motorola, Inc. Release etch method for micromachined sensors
US6936491B2 (en) * 2003-06-04 2005-08-30 Robert Bosch Gmbh Method of fabricating microelectromechanical systems and devices having trench isolated contacts
US20060148133A1 (en) * 2005-01-03 2006-07-06 Analog Devices, Inc. Method of forming a MEMS device
US7372617B2 (en) * 2005-07-06 2008-05-13 Peter Enoksson Hidden hinge MEMS device
JP2008080444A (ja) * 2006-09-27 2008-04-10 Toshiba Corp Ｍｅｍｓ素子製造方法およびｍｅｍｓ素子
DE102006052630A1 (de) * 2006-10-19 2008-04-24 Robert Bosch Gmbh Mikromechanisches Bauelement mit monolithisch integrierter Schaltung und Verfahren zur Herstellung eines Bauelements

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108470679A (zh) * 2011-01-25 2018-08-31 Ev 集团 E·索尔纳有限责任公司 用于永久接合晶片的方法
CN108470679B (zh) * 2011-01-25 2022-03-29 Ev 集团 E·索尔纳有限责任公司 用于永久接合晶片的方法
WO2012122878A1 (zh) * 2011-03-15 2012-09-20 迈尔森电子（天津）有限公司 集成惯性传感器与压力传感器及其形成方法
US9448251B2 (en) 2011-03-15 2016-09-20 Memsen Electronics Inc Integrated inertial sensor and pressure sensor, and forming method therefor
US10173887B2 (en) 2013-03-15 2019-01-08 Robert Bosch Gmbh Epi-poly etch stop for out of plane spacer defined electrode
TWI652728B (zh) 2013-03-15 2019-03-01 德商羅伯特博斯奇股份有限公司 用於面外間隔體界定電極的磊晶式多晶矽蝕刻停止

Also Published As

Publication number Publication date
US7943525B2 (en) 2011-05-17
US20100155861A1 (en) 2010-06-24
WO2010080229A1 (en) 2010-07-15
CN102257609A (zh) 2011-11-23
CN102257609B (zh) 2014-02-12
JP5602761B2 (ja) 2014-10-08
JP2012512754A (ja) 2012-06-07

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