TW201032230A - System and method for resolving request collision in a single-port SRAM - Google Patents
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201032230 六、發明說明: 【發明所屬之技術領域】 本發明係有關靜態隨機存取記憶體(SRAM),特別是 關於一種解決單埠(single-port ) SRAM之請求衝突 (request collision )的系統及方法。 【先前技術】 靜態隨機存取記憶體(SRAM)為半導體記憶體之一 種’由於其不需進行週期性的更新(refresh),因此速度 較動態隨機存取記憶體(DRAM)快❶鑑於此,SRAM常 作為平面顯示器(例如液晶顯示器)驅動器之視訊記憶體。 SRAM可分為單埠(single-port ) SRAM及多埠 (multi-port) SRAM。前者僅具有單一讀/寫埠’而後者 則具有二或多個讀/寫埠’可於同一時間讓多個請求者進行 存取。由於多埠SRAM佔用較大晶片面積且耗用較多功 率,因此,單埠SRAM較常用於可攜式或手持電子裝置中, 例如行動電話。 然而’高容量且低功率之單埠SRAM於碰到請求衝突 (request collision)或者同一時脈週期出現多個請求 201032230 時’則會造成速度的驟減。第一 A圖例示傳統單埠sram 的請求衝突之時序圖。於圖式中,一主機(h〇st)送出外 部請求(external request) EXT一REQUEST 以依序寫入 資料(資料1、資料2、資料3、資料4)至單埠SRAM。 然而’於同一週期1内’内部請求(internai reqUest) INT一RD也要求讀取資料。換句話說,内部請求和外部請 求對於資料1發生了請求衝突。為了解決這個問題,sram 鲁 的序列器(sequencer )提供如第一 b圖所示的修正時序, 其中的信號RAM一CLK係自外部請求EXT一REQUEST所 導出’而信號RAM一LE則自内部請求iNT_RD所導出。當 資料1於週期1寫入SRAM後,下一週期(亦即,週期2) 則讓内部請求專屬使用。資料2的外部請求被延後至下一 週期(亦即,週期3),而其餘的資料3、資料4也分別延 後一個週期。 如上所述’請求衝突可藉由延後所有請求的週期來得 到解決,然而此將造成傳統單埠SRAM的速度驟減(亦即, 每當發生請求衝突時即會伴隨一個週期的延後)。鑑於此, 因此亟需提出一種新穎的單埠SRAM架構及方法,用以増 進速度效能。 【發明内容】 201032230 鑑於上述,本發明的目的之一在於提出一系統及方 法,當單埠SRAM發生請求衝突時,不需延後其週期,因而 得以增進速度效能,且能同時維持其高容量及低功率冬優201032230 VI. Description of the Invention: [Technical Field] The present invention relates to a static random access memory (SRAM), and more particularly to a system for solving a request collision of a single-port SRAM and method. [Prior Art] Static Random Access Memory (SRAM) is a kind of semiconductor memory. Because it does not need to be periodically refreshed, the speed is faster than that of dynamic random access memory (DRAM). SRAM is often used as a video memory for flat panel displays (such as liquid crystal displays). SRAM can be divided into single-port SRAM and multi-port SRAM. The former has only a single read/write 埠' and the latter has two or more read/write 埠' to allow multiple requesters to access at the same time. Since multi-turn SRAMs occupy a large wafer area and consume more power, 單埠SRAM is more commonly used in portable or handheld electronic devices, such as mobile phones. However, 'high-capacity and low-power SRAMs will cause a sudden drop in speed when they encounter a request collision or multiple requests for 201032230 in the same clock cycle. The first A diagram illustrates a timing diagram of a request collision of a conventional 單埠sram. In the figure, a host (h〇st) sends an external request EXT_REQUEST to sequentially write data (data 1, data 2, data 3, data 4) to the 單埠SRAM. However, within the same period 1 internal request (internai reqUest) INT-RD also requires reading data. In other words, internal requests and external requests have a request conflict for material 1. In order to solve this problem, the sram ru sequencer provides the correction timing as shown in the first b diagram, where the signal RAM CLK is derived from the external request EXT-REQUEST' and the signal RAM-LE is internally requested. Exported by iNT_RD. When data 1 is written to SRAM in cycle 1, the next cycle (ie, cycle 2) allows the internal request to be used exclusively. The external request for data 2 is deferred to the next cycle (i.e., cycle 3), while the remaining data 3 and 4 are also delayed by one cycle. As mentioned above, 'request conflicts can be resolved by delaying the cycle of all requests, however this will cause the speed of the traditional 單埠SRAM to drop sharply (that is, each time a request collision occurs, it will be accompanied by a delay of one cycle) . In view of this, it is urgent to propose a novel 單埠SRAM architecture and method for achieving speed performance. SUMMARY OF THE INVENTION In view of the above, one of the objects of the present invention is to provide a system and method that can improve the speed performance and maintain its high capacity at the same time when the request conflict occurs in the SRAM without delaying its cycle. And low power winter
根據本發明實施例,單埠SRAM包含第一 SRM部分及 第一 SRAM部分,其被依序存取。單埠SRM還包含第一暫 存區及第二暫存區’用以暫存至少料及—位址,其中 第-暫存區對應於第_ SRAM部分,且第三暫存區對應於 第一 SRAM部分。SRAM控制器產生控制信號,用以管理 進出單埠SRAM的資料流。序列器根據猶^^控制器之 控制信號辑出相錢,㈣控制第—/第二sram部 分及第-/第二暫存區的時序。第一匯流排讓第一 sram 部分、第-暫存區得以和序列器通信,而第二匯流排讓第 二SRAM部分、第二暫存區得以和序列器通信嘯據本實 施例’當請求衝突發生時,資料則暫存於正進行存取之第 -/第二SRAM部分所對應的第一/第二暫存區。於後續期 間’當第-/第二SRAM部分的其中-個被麵時,暫存 資料則同時傳送至第一 /第二SRAM部分的另一個。 【實施方式】 201032230 、 第二圖之方塊圖顯示本發明實施例為解決單埠 (single-port)靜態隨機存取記憶體(SRAM) 100之請 求衝突的系統1。在本實施例中,系統i係適用於可攜式 或手持式電子裝置(例如行動電話)的平面顯示器(例如 液晶顯示器)驅動器,然而,本實施例所揭露之系統i同 樣可適用於其他的電子裝置中。 • SRAM 100通常分為二部分:第一 SRAM部分(或稱 SRAM左部)10A及第二SRAM部分(或稱SRAM右部) 10B。-些邏輯電路(未顯示於圖式中)則安排於這兩部 分(10A、10B)的中間,用以得到較佳的時序。每一部 分10A/1GB通常又包含-或多組(bank)記憶區。在本 實施例中,第一 SRAM部分ι0Α及第二SRAM部分1〇B 係被依序存取。例如,第一資料被寫入第一 SRAM部分 ❹10A’接著,將第二資料寫入第二sj^M部分⑺㊀。接下 來,第二資料則又寫入第一 SRAM部分1〇A,再將第四資 料寫入第二SRAM部分ΐ0Ββ在本實施例中,第一(左) 暫存區(又稱為影暫存區,shad〇wbank) 12Α對應至第 - SRAM部分缝,而第二(右)暫存區(又稱為料存 區,shadow bank) 12B 對應至第二 Sram 部分;L〇Be 其中,第一暫存區12A可暫存至少一資料及位址,而第二 暫存區12B也可暫存至少一資料及位址。 201032230 於系統1的架構中,SRAM控制器14用以管理進出 SRAM 100的資料流。例如,sram控制器14可藉由資 料線、位址線及(外部)請求輸入而和行動電話的主機進 行通信。藉此’SRAM控制器14產生控制信號並傳送至 SRAM 100的序列器(seqUencer ) 16。例如,當主機傳 送一外部請求以寫入資料至SRAM 100時,SRAM控制器 φ 14會產生一外部請求EXT一REQUEST。而當顯示器需要 顯示資料時,會發出一内部請求INT_RD並輸入至序列器 16。信號 Dummy_Request_Enable 及信號 Active一Window_〇dd將於後續說明。 接下來,序列器16根據SRAM控制器14的控制作 號而產生一些序列信號,用以控制第一/第二SRam部八 ❹ 10A/10B及第一 /第二暫存區12A/12B的時序。/、上 信號當中,信號RAM一CLK係導自外加 一 请求According to an embodiment of the invention, the 單埠SRAM includes a first SRM portion and a first SRAM portion that are sequentially accessed. The SRM further includes a first temporary storage area and a second temporary storage area for temporarily storing at least a material address, wherein the first temporary storage area corresponds to the first _SRAM part, and the third temporary storage area corresponds to the first SRAM part. The SRAM controller generates control signals for managing the flow of data into and out of the SRAM. The sequencer compiles the money according to the control signal of the controller, and (4) controls the timing of the first/second sram part and the second/second temporary storage area. The first bus bar allows the first sram portion, the first temporary storage area to communicate with the sequencer, and the second bus bar allows the second SRAM portion, the second temporary storage area, and the serializer to communicate with the present embodiment. When a collision occurs, the data is temporarily stored in the first/second temporary storage area corresponding to the first/second SRAM portion of the access being accessed. During the subsequent period 'when one of the first/second SRAM sections is faceted, the temporary data is simultaneously transferred to the other of the first/second SRAM sections. [Embodiment] The block diagram of 201032230 and the second figure shows a system 1 for solving a request conflict of a single-port static random access memory (SRAM) 100 in the embodiment of the present invention. In this embodiment, the system i is suitable for a flat panel display (for example, a liquid crystal display) driver of a portable or handheld electronic device (for example, a mobile phone). However, the system i disclosed in the embodiment is equally applicable to other systems. In an electronic device. • SRAM 100 is usually divided into two parts: a first SRAM part (or SRAM left part) 10A and a second SRAM part (or SRAM right part) 10B. - These logic circuits (not shown in the figure) are arranged in the middle of the two parts (10A, 10B) for better timing. Each portion of 10A/1GB typically contains - or multiple banks of memory. In the present embodiment, the first SRAM portion ι0Α and the second SRAM portion 〇B are sequentially accessed. For example, the first material is written to the first SRAM portion ❹ 10A'. Next, the second data is written to the second sj^M portion (7). Next, the second data is written to the first SRAM portion 1A, and then the fourth data is written to the second SRAM portion ΐ0Ββ. In this embodiment, the first (left) temporary storage area (also known as the shadow temporary) The storage area, shad〇wbank) 12Α corresponds to the S-SRAM partial seam, and the second (right) temporary storage area (also known as the shadow bank) 12B corresponds to the second Sram part; L〇Be where, A temporary storage area 12A can temporarily store at least one data and address, and the second temporary storage area 12B can also temporarily store at least one data and address. 201032230 In the architecture of System 1, SRAM controller 14 is used to manage the flow of data into and out of SRAM 100. For example, the sram controller 14 can communicate with the host of the mobile phone via the data line, the address line, and the (external) request input. Thereby, the 'SRAM controller 14 generates a control signal and transmits it to the sequencer (seqUencer) 16 of the SRAM 100. For example, when the host transmits an external request to write data to the SRAM 100, the SRAM controller φ 14 generates an external request EXT_REQUEST. When the display needs to display the data, an internal request INT_RD is issued and input to the sequencer 16. The signal Dummy_Request_Enable and the signal Active-Window_〇dd will be described later. Next, the sequencer 16 generates sequence signals according to the control number of the SRAM controller 14 for controlling the timing of the first/second SRam portion ❹10A/10B and the first/second temporary storage regions 12A/12B. . /, in the upper signal, the signal RAM-CLK is derived from the external one request
EXT一REQUEST,而信號RAM_LE貝ij導自由A 1邵請求 INT一RD。信號SHADOW_CLK則提供時脈给第一 /第 暫存區12A/12B。 — 二 SRAM 部 (左位址線 第一 SRAM部分/暫存區10A/12A及第 分/暫存區10B/12B藉由第一匯流排 201032230 (address—L)、左資料線(data一L))及第二匯流排(右位址 線(address一R)、右資料線(data_R))分別和序列器16通 信。第一 SRAM部分l〇A和第二SRAM部分10B各自具 有其解碼器(未顯示於圖式中)。 SRAM 100還包含第一閂鎖(latch) UA和第二閃 鎖11B,其分別對應至第一/第二SRAM部分10A/10B。 • 當内部請求INT-RD自主機發出後,閂鎖(iatch ) 11A/11B則用以自第一/第二SRAM部分10A/10B讀取 及儲存整行的顯示資料。 第三A圖顯示本實施例SRAM 100的第一請求衝突例 之時序圖。於圖式中,主機傳送外部請求EXT_REQEUST 用以依序將資料(資料1、資料2、資料3、資料4)於相 ❿對應週期(週期1、週期2、週期3、週期4)内寫至SRAM 1〇〇。然而,於週期1内,内部請求INT__RD也同時要求 讀取資料。因此,内部請求和外部請求對於資料i發生了 請求衝突。為了解決此問題,序列器16提供如第三B圖 所示的修正時序,其中的信號RAM_CLK係自外部請求 EXT一REQUEST所導出,而信號raM—LE則自内部請求 INT-RD所導出。當資料1於週期1 (藉由左資料線 (data一L))寫至第一 SRAM部分10A後,下一週期(亦即, 201032230EXT-REQUEST, while the signal RAM_LE ij leads free A 1 Shao request INT-RD. The signal SHADOW_CLK provides the clock to the first/temporary buffer area 12A/12B. – Two SRAM sections (left address line first SRAM section/temporary storage area 10A/12A and minute/temporary storage area 10B/12B by first busbar 201032230 (address-L), left dataline (data-L) )) and the second bus (right address line (address-R), right data line (data_R)) communicate with the sequencer 16, respectively. The first SRAM section 10A and the second SRAM section 10B each have their decoder (not shown in the drawing). The SRAM 100 also includes a first latch UA and a second flash lock 11B that correspond to the first/second SRAM portions 10A/10B, respectively. • When the internal request INT-RD is sent from the host, the latch (iatch) 11A/11B is used to read and store the entire line of display data from the first/second SRAM section 10A/10B. The third A diagram shows a timing chart of the first request collision example of the SRAM 100 of the present embodiment. In the figure, the host transmits an external request EXT_REQEUST to sequentially write the data (data 1, data 2, data 3, data 4) to the corresponding corresponding period (cycle 1, cycle 2, cycle 3, cycle 4) to SRAM 1〇〇. However, in cycle 1, the internal request INT__RD also requires reading data. Therefore, internal requests and external requests have a request conflict for material i. To solve this problem, the sequencer 16 provides a modified timing as shown in Figure 3B, in which the signal RAM_CLK is derived from the external request EXT_REQUEST and the signal raM-LE is derived from the internal request INT-RD. When the data 1 is written to the first SRAM portion 10A in cycle 1 (by the left data line (data-L)), the next cycle (ie, 201032230)
遇期2)則讓内部請求LE專屬使用。在此同時,於 暫存區時脈SHADOW一CLK的控制下,資料2被寫至第二 暫存區12B内。於接下來的週期3,資料3 (藉由左資料 線(data—L))直接寫至第一 SRAM部分1〇A,同一時間’ 資料2則從第二暫存區12B傳送至第二SRAM部分 10B。其餘資料(亦即,資料4及後續資料)則是依照其 原本的週期進行資料的寫入。根據本實施例,第三B圖之 鲁時序並不需要延後週期以解決請求衝突問題,反觀第一 B 圖之時序則需要延後週期。藉此,本發明實施例的速度不 會受到影響。 第四A圖顯示本實碌例S RAM 10 0的第二請求衝突例 之時序圖。時序圖類似於第三八圖,不同的是,資料2為 最後一筆資料,其後並無資料3或資料4。第四B圖顯示 鬌為解決第四A圖之請求衝突問題所提出之修正時序。當資 料2於週期2寫至第一暫存區12B後,SRAM控制器14 產生虛擬請求 (dummy request ) Dummy_Request—Enable,使得資料2得以從第二暫存 區12B傳送至第二SRAM部分10B〇 —般來說,於符合 下列情形之一時,SRAM控制器14會於時間t產生虛擬 請求Dummy—Request一Enable :當離開一主機請求主動 視窗(host request active window)時,或者離開記憶 11 201032230 體存取命令(memory access command)時。在本說明 書中,上述之「主動視窗」係由主機所請求決定的,其用 以通知SRAM 100所需求的更新區域。 第五A圖顯示本實施例SRAM 100的第三請求衝突例 之主機請求主動視窗(host request active window) 50。 主機請求主動視窗50由SRAM控制器14決定。在本例 • 子申’主動視窗50的最後一筆資料(資料3)為奇序列資 科。第一行的最後一筆資料(資料3)和第二行的第一筆 資料(資料4)同樣對應至相同的SRAM部分(亦即,第 〜SRAM部分l〇A)。如果請求衝突發生在資料3之前, 則資料3會於週期3暫存於第一暫存區12A。由於資料4 也是對應至第一 SRAM部分l〇A,因此,資料3和資料4 魯不能於同-時間同時寫至第- SRAM部分l〇A。為了解決 此問題,如第五B圖所示的修正時序,將資料3 一直保持 於第一暫存區12A内,直到兩個週期以後(亦即,於週期 5時)’資料3才被傳送至第一 SRAM部分1〇八,而資料 5則同時被寫至第二SRAM^1〇BeJ^奇序列資料3 的存取係受控於主動(asserted)的Active—WindQw—帽 (主動視窗奇序列)信號,其由SRAM控制器14所產生。 12 201032230 . 第六A圖顯示本實施例SRAM 100的第四請求衝突例 之主機請求主動視窗(host request active window) 60。 在本例子中,主動視窗60的最後一筆資料(資料4)為偶 序列資料。第一行的最後一筆資料(資料4)和第二行的 第一筆資料(資料5)對應至不同的SRAM部分(亦即, 分別為第二SRAM部分10B、第一 SRAM部分i0A)。如 果請求衝突發生在資料4之前,則資料4會暫存於第二暫 ❿存區12B。由於資料5係對應至第一 SRAM部分1〇A, 因此,資料4和資料5可於同一時間同時傳送/寫至第二 SRA1V[部分10B及第一 SRAM部分10A,如第六B圖所 示的時序圖。上述偶序列資料4的存取係受控於非主動 (de-asserted )的 Active—Window—Odd (主動視窗奇序 列)信號,其由SRAM控制器14所產生。 13 201032230 . 【圖式簡單說明】 第一 A圖例示傳統單埠SRAM的請求衝突之時序圖。 第一 B圖顯示為解決第一圖請求衝突之修正時序圖。 第二圖之方塊圖顯示本發明實施例為解決單埠SRAM之請 求衝突的系統。 第三A圖顯示本實施例SRAM的第一請求衝突例之時序 圖。 第二B圖顯示為解決第三A圖之請求衝突問題所提出之修 正時序圖。 第四A圖顯示本實施例SRAM的第二請求衝突例之時序 圖。 第四B圖顯示為解決第四A圖之請求衝突問題所提出之修 正時序圖。 ❹ 第五A圖顯示本實施例SRAM的第三請求衝突例之主機 請求主動視窗。 第五B圖顯示為解決第五A圖之請求衝突問題所提出之修 正時序圖。 第六A圖顯示本實施例SRAM的第四請求衝突例之主機 請求主動視窗。 第六B圖顯示為解決第六A圖之請求衝突問題所提出之修 正時序圖。 201032230 【主要元件符號說明】 1 解決單埠SRAM請求衝突的系統 10A 第一 SRAM部分(SRAM左部) 10B 第二SRAM部分(SRAM右部) 11A 第一閂鎖 11B 第二閂鎖 12A 第一(左)暫存區 12B 第二(右)暫存區 16 序列器 14 SRAM控制器In case of 2), the internal request LE is exclusively used. At the same time, under the control of the temporary sector clock SHADOW-CLK, the data 2 is written into the second temporary storage area 12B. In the next cycle 3, data 3 (by the left data line (data_L)) is directly written to the first SRAM portion 1A, and at the same time 'data 2 is transferred from the second temporary storage area 12B to the second SRAM. Part 10B. The rest of the information (ie, Data 4 and subsequent information) is written in accordance with its original cycle. According to this embodiment, the timing of the third B graph does not require a delay period to resolve the request collision problem, and the timing of the first B graph requires a delay period. Thereby, the speed of the embodiment of the present invention is not affected. The fourth A diagram shows a timing chart of the second request collision example of the real example S RAM 10 0. The timing diagram is similar to the third eight diagram. The difference is that the data 2 is the last data, and there is no data 3 or data 4. Figure 4B shows the timing of the correction proposed to solve the request conflict problem in Figure 4A. After the data 2 is written to the first temporary storage area 12B in the cycle 2, the SRAM controller 14 generates a dummy request Dummy_Request_Enable so that the material 2 can be transferred from the second temporary storage area 12B to the second SRAM portion 10B. In general, the SRAM controller 14 generates a virtual request Dummy-Request-Enable at time t when one of the following conditions is met: when leaving a host request active window, or leaving the memory 11 201032230 When accessing a command (memory access command). In the present specification, the above-mentioned "active window" is determined by the host to notify the update area required by the SRAM 100. The fifth A diagram shows a host request active window 50 of the third request collision example of the SRAM 100 of the present embodiment. The host request active window 50 is determined by the SRAM controller 14. In this example, the last data (data 3) of the active window 50 is an odd sequence. The last data in the first line (information 3) and the first data in the second line (information 4) also correspond to the same SRAM portion (i.e., the first to the SRAM portion l〇A). If the request conflict occurs before the material 3, the data 3 is temporarily stored in the first temporary storage area 12A in the period 3. Since the data 4 also corresponds to the first SRAM portion l〇A, the data 3 and the data 4 cannot be simultaneously written to the first-SRAM portion l〇A at the same time. In order to solve this problem, as shown in the correction timing shown in FIG. 5B, the data 3 is kept in the first temporary storage area 12A until the data is transmitted after two cycles (that is, at the time of the cycle 5). To the first SRAM part 1〇8, and the data 5 is simultaneously written to the second SRAM^1〇BeJ^ odd sequence data 3 access system is controlled by the active (Active)-WindQw-cap (active window odd A sequence) signal, which is generated by the SRAM controller 14. 12 201032230. Fig. 6A shows a host request active window 60 of the fourth request collision example of the SRAM 100 of the present embodiment. In this example, the last data (information 4) of the active window 60 is an even sequence of data. The last data in the first line (information 4) and the first data in the second line (information 5) correspond to different SRAM portions (i.e., the second SRAM portion 10B and the first SRAM portion i0A, respectively). If the request conflict occurs before the data 4, the data 4 is temporarily stored in the second temporary storage area 12B. Since the material 5 corresponds to the first SRAM portion 1A, the data 4 and the data 5 can be simultaneously transferred/written to the second SRA1V at the same time [the portion 10B and the first SRAM portion 10A, as shown in the sixth B-picture). Timing diagram. The access of the even sequence data 4 described above is controlled by a de-asserted Active-Window-Odd (Active Window Odd Sequence) signal, which is generated by the SRAM controller 14. 13 201032230 . [Simple description of the diagram] The first A diagram illustrates the timing diagram of the request collision of the conventional 單埠SRAM. The first B-picture shows a modified timing diagram for resolving the first picture request collision. The block diagram of the second diagram shows a system for resolving the conflict of requests of the SRAM in accordance with an embodiment of the present invention. The third A diagram shows a timing chart of the first request collision example of the SRAM of this embodiment. Figure 2B shows a revised timing diagram for resolving the request conflict problem of Figure A. The fourth A diagram shows a timing chart of the second request collision example of the SRAM of this embodiment. Figure 4B shows a revised timing diagram for resolving the request conflict problem of Figure 4A.第五 FIG. 5A shows the host request active window of the third request conflict example of the SRAM of the embodiment. Figure 5B shows a revised timing diagram for resolving the request conflict problem of Figure 5A. Figure 6A shows the host request active window of the fourth request conflict example of the SRAM of this embodiment. Figure 6B shows a revised timing diagram for resolving the request conflict problem of Figure 6A. 201032230 [Description of main component symbols] 1 System 10A that resolves SRAM request conflicts First SRAM section (SRAM left part) 10B Second SRAM section (SRAM right part) 11A First latch 11B Second latch 12A First ( Left) temporary storage area 12B second (right) temporary storage area 16 sequencer 14 SRAM controller
100 SRAM EXT_REQUEST外部請求 INT_RD 内部請求100 SRAM EXT_REQUEST external request INT_RD internal request
RAM_CLK 外部請求之導出信號 RAM_LE 内部請求之導出信號RAM_CLK External request export signal RAM_LE Internal request export signal
Dummy 一 Request_Enable 虛擬請求Dummy a Request_Enable virtual request
Active一Window_Odd SHADOW—CLK (第 _主動視窗奇序列信號 /第二)暫存區時脈 data_L 左資料線 data_R 右資料線 15 201032230Active-Window_Odd SHADOW-CLK (the first _ active window odd sequence signal / second) temporary storage area clock data_L left data line data_R right data line 15 201032230
addressJL address R 左位址線 右位址線addressJL address R left address line right address line
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