TW201028052A - Plasma processing device and plasma processing method - Google Patents

Abstract

Provided is a plasma processing device (11) which includes a reaction gas supply unit (13) for supplying a reaction gas for plasma processing into a processing vessel (12). The reaction gas supply unit (13) has: a first reaction gas supply unit (61) which is arranged at the center portion of a dielectric plate (16) and supplies a reaction gas downward toward the center region of a substrate W to be processed and held by a holding table (14); and a second reaction gas supply unit (62) which is arranged immediately above the holding table (14) excluding the region immediately above the substrate W to be processed and supplies a reaction gas in an oblique direction toward the substrate W to be processed and held by the holding table (14).

Description

201028052 VI. Description of the Invention: [Technical Field] The present invention relates to a plasma processing apparatus and a plasma processing method, particularly a plasma processing apparatus and plasma processing using microwaves as a plasma source to generate plasma method. [Prior Art] Semiconductor devices such as LSI (Large Scale Integrated Circuit) perform surname, CVD (Chemical Vapor Deposition), sputtering, etc. on a semiconductor substrate (Wafer) of a substrate to be processed. Made by a variety of treatments. Etching or CVD, sputtering, and the like use plasma as a method of processing the energy supply source, that is, plasma etching or plasma CVD, plasma sputtering, and the like. Plasma types include parallel plate electropolymerization, ICP (Inductively-Coupled Plasma), ECR (Electron Cyclotron Resonance) plasma, etc., and plasma generated by various devices is used for processing. When the substrate to be processed is subjected to the plasma etching treatment as described above, the reaction gas for treating the substrate to be processed must be supplied to the processing container for generating the electrical device. Here, the technique of supplying the reverse gas to the processing container in the process of the substrate to be processed is disclosed in Japanese Patent Publication No. Hei 4-i65374 (Patent Document i), and Japanese Patent Publication No. 6-112163 (Patent Document 2). In the patent document i, the ECR «reliable processing apparatus is provided with an annular gas ring between the mounting substrate 2 5 201028052 and the main coil. The diameter of the gas ring is larger than the load σ. The reaction gas is supplied by the gas ring. Patent Document 2 describes that a plasma processing apparatus using ECR plasma is provided in the vicinity of a sample holding station for introducing a deposition gas inlet. In the case of processing the substrate to be processed, it is preferable to uniformly treat the surface of the substrate to be processed 10 in a uniform manner. Here, when the reaction gas is supplied to the processing capacity, the reaction gas is supplied from the viewpoint of uniformity of the surface of the substrate to be processed. Fig. 21 is a partial schematic cross-sectional view showing a plasma processing apparatus in which a reaction gas is supplied to a reaction gas supply unit in a processing container at two places. The plasma processing apparatus 101 shown in Fig. 21 is provided with a first portion in the central portion of the dielectric plate 103 in which the microwave is introduced into the processing container 1A in order to supply the reaction gas to the central portion of the disk-shaped substrate W to be processed. The reaction gas supply unit 1〇4. Q The first reaction gas supply unit 104 supplies the reaction gas so as to blow a gas to the central region of the substrate w to be processed. Further, in order to supply the reaction gas to the end region of the substrate w to be processed, the second reaction gas supply portion 1 〇 6 is provided on the upper side of the side wall 105 of the processing container 1〇2. Further, the plasma processing apparatus 101 in the process is exhausted downward by the exhaust means (not shown in the drawings) in the lower part of Fig. 21. In the electropolymerization process 6 201028052 in which the reaction gas supply unit is provided at two places, the second reaction gas supply is supplied to the processing container 102 in the pressure region (about 50 mTorr or more) of the viscous fluid. The reaction gas supplied from the portion 106 is affected by the first reaction gas supply unit 104 and flows in the center direction indicated by an arrow X in Fig. 21 . In other words, the reaction gas supplied from the second reaction gas supply unit and the reaction gas supplied from the first reaction gas supply unit form the same supply path. Therefore, the effect of supplying the reaction gas by the second reaction gas supply unit 1〇6 cannot be obtained, and the reaction gas supplied to the central portion of the substrate W to be processed is radially from the central portion of the substrate W to be processed toward the end portion. When the diffusion is repeated, the more the reaction gas is consumed, the more the reaction product is consumed, and the reaction product is increased, so that the radial direction of the substrate W to be processed causes a distribution of the treatment state, and as a result, unevenness of the surface occurs. On the other hand, in the case of the pressure region of the molecular fluid (about 50 mTorr or less), the reaction gas 10 system supplied from the second reaction gas supply unit is exhausted by the exhaust device, and flows to the arrow Y shown in FIG. Below. As a result, the reaction gas supplied from the second reaction gas supply unit is discharged before reaching the substrate W to be processed. Therefore, the reaction gas reaching the substrate W to be processed becomes almost only the gas supplied from the first reaction gas supply unit 104, and the processing state of the substrate to be processed w occurs in the same manner as described above. In the plasma processing apparatus 101 of the above configuration, even if the pressure region in the processing container 102 is changed and the gas supply amount of the second gas supply unit 1〇6 is adjusted, the reaction cannot be uniformly supplied to the substrate W to be processed. Therefore, it is difficult to ensure surface uniformity when processing the substrate w to be processed. The plasma processing apparatus described in Patent Document 1 and Patent Document 2 also has the same problems as described above. Here, in order to uniformly supply the reaction gas to the substrate W to be processed and to provide the second reaction gas supply portion in the region immediately above the substrate W to be processed, the following problems occur. Fig. 22 is a partial schematic cross-sectional view of the plasma processing apparatus 111 in this case, which corresponds to the cross section shown in Fig. 21. As shown in FIG. 22, the plasma processing apparatus in is provided with a first reaction gas supply unit n3 at a central portion of the dielectric plate 112, and is disposed in a region directly above the substrate W to be processed held by the holding table 114. There is a ring-shaped second reaction gas supply unit 115. The reaction gas is supplied to the immediately below the end region of the substrate W to be processed by the second reaction gas supply unit 115. However, the reaction gas supplied from the first reaction gas supply unit 113 and the reaction gas supplied from the second reaction gas supply unit 1丨5 are between the central portion of the substrate W to be processed and the radial direction of the end portion. The area 116 meets. In Fig. 22, the area 116 is indicated by a broken line. As a result, the reaction gas causes a residence state in the region U6, so that the deposit (reaction product) is easily retained. Further, as shown in Fig. 22, when the second reaction gas supply portion is provided in the region immediately above the substrate w to be processed, a shield for shielding the flowing plasma is present on the substrate to be processed w. Such an electropolymerized shield causes uneven processing on the substrate W to be processed. The retention of the above deposits and the influence of the plasma shield may cause the (four) rate of the substrate w in the region of the surface of the processed substrate w to be different from that in the central region or the end region, thereby damaging the processing of the substrate to be processed w. Surface uniformity. SUMMARY OF THE INVENTION An object of the present invention is to provide a plasma processing apparatus which can improve surface uniformity when processing a substrate w to be processed.其他 Another object of the present invention is to provide a plasma processing method which can improve the uniformity of the surface when the substrate to be processed w is processed. The plasma processing apparatus of the present invention has a processing capacity for performing electricity processing on a substrate to be processed therein; a holding station disposed in the processing container and holding the substrate to be processed thereon; An electric current generating mechanism that generates electricity in the container; and a reaction gas supply unit that supplies the reaction gas for the money processing to the processing container. The reaction gas supply unit includes a first reaction gas supply unit that supplies a reaction gas directly under the center 〇 region of the substrate to be processed held on the holding table, and a refusal to be held on the holding table. The area directly above the substrate is processed and placed at a position immediately above the holding stage (four), and the second reaction gas supply unit that supplies the reaction gas to the center side of the substrate to be processed on the holding stage is reduced. The plasma processing apparatus of such a configuration is a first reaction gas supply unit that supplies a reaction gas directly under the central portion of the substrate to be processed, and a second reaction gas supply unit that supplies a reaction gas toward the center side of the substrate to be processed. The reaction gas 9 201028052 can be uniformly supplied to the entire substrate to be processed. Further, the reaction gases supplied from the first and second reaction gas supply units do not stay on the substrate to be processed, and the product (reaction product) can be retained. Furthermore, the flow of the plasma reaching the substrate to be processed is not blocked by the second reaction gas supply unit. Therefore, the uniformity of the surface when the substrate to be processed w is processed can be improved. Further, the area immediately above is referred to as a region vertically above the substrate to be processed. Further, the so-called center of the substrate to be processed refers to the vertical upper side of the central region of the substrate to be processed and the central region of the substrate to be processed. Preferably, the second reaction gas supply unit is provided in the vicinity of the holding stage. More preferably, the second reaction gas supply unit supplies the reaction gas obliquely toward the central portion of the substrate to be processed held on the stationary stage. Further, the first reaction gas supply unit may supply the reaction gas in the lateral direction toward the center side of the substrate to be processed held on the holding stage. More preferably, the second reaction gas supply unit includes an annular portion, and the annular portion is provided with a supply hole for supplying a reaction gas. More preferably, the substrate to be processed has a disk shape, and the annular portion has an annular shape, and the inner diameter of the annular portion is larger than the outer diameter of the substrate to be processed. Further, the processing container may include a bottom portion on the lower side of the holding table and a side wall extending upward from the periphery of the bottom portion, and the second reaction gas supply portion is buried in the side wall. More preferably, the side wall includes a protruding portion that protrudes inward, and the second reaction gas supply portion is embedded in the protruding portion. One of the more preferred embodiments of the plasma generating mechanism comprises a microwave generator for producing microwaves for generating plasma in 201028052; and a counter position disposed at the holding stage, and introducing the microwave into the dielectric plate in the processing container. The first reaction gas supply unit is provided at a central portion of the dielectric plate. More preferably, the first temperature adjustment unit that adjusts the temperature of the central portion of the substrate to be processed held by the holder is adjusted, and the peripheral portion of the central portion of the substrate to be processed held by the holder is adjusted. a second temperature adjustment unit for the temperature of the end region. Preferably, at least one of the first and second temperature adjustment portions is constituted by a plurality of components. The first and second temperature adjustment units of one of the preferred embodiments are respectively disposed inside the holding table. More preferably, the processing container comprises a bottom portion located at a lower side of the holding table and a side wall extending upward from a periphery of the bottom portion, and a side wall temperature adjusting portion for adjusting the temperature of the side wall. The sidewall temperature adjustment portion of one of the preferred embodiments is provided with Φ inside the side wall. Another plasma processing method of the present invention is a plasma processing method for performing electrical processing on a substrate to be processed. The plasma processing method herein comprises the steps of: holding a substrate to be processed on a holding stage disposed in the processing container; generating a microwave for plasma excitation; and introducing the microwave into the processing bar by using a dielectric plate And a step of supplying a reaction gas directly from a central portion of the dielectric plate to a central portion of the substrate to be processed, and supplying a reaction gas toward a center side of the substrate to be processed held on the holding table. 11 201028052

电 认 认 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电a processing container for treating the plasma in the interior of the substrate: a polymerization generating mechanism for treating the plasma in the processing container; and a reaction gas supply for supplying the reaction hole for the plasma processing to the processing container unit. The reaction gas supply 4 includes a first-reaction gas gambling unit that supplies a reaction gas directly under the central region of the substrate to be processed held on the stationary stage, and includes a refusal to be placed on the holding table. An annular portion that is disposed on the inner diameter side of the side wall and that is located above the fixed stage in the area directly above the substrate, and supplies the reaction gas toward the center side of the substrate to be processed held on the holding stage Two reaction gas supply unit. Preferably, the annular portion is provided on the outer diameter side of the holding table.

More preferably, the first temperature adjustment unit that adjusts the temperature of the central portion of the substrate to be processed held by the holder is adjusted, and the end of the central portion of the substrate to be processed held by the holder is adjusted. a second temperature adjustment unit for the temperature of the portion region. More preferably, the first and second temperature adjustment units are respectively disposed inside the holding table. More preferably, at least one of the first and second temperature adjustment portions is constituted by a plurality of components. According to the plasma processing apparatus and the plasma processing method, the first reaction gas supply unit that supplies the reaction gas directly under the central region of the substrate to be processed and the reaction gas 12 are supplied toward the center side of the substrate to be processed. The portion of the substrate to be processed can be uniformly supplied: in addition, the holes supplied from the first and second reaction gas supply portions are stopped on the substrate to be processed, and the sink can be suppressed. Further, by the second reaction gas supply portion, the flow of the electric raft reaching the substrate to be processed is blocked. Therefore, it is possible to improve the surface uniformity of the substrate to be processed. © ❹ [Embodiment] Underarm > The embodiment of the present invention will be described in detail with reference to the drawings. The invention is an electric power for implementing eggs (4) county set (four) t group = schematic view. As shown in Fig. 1, the processing device 丨1 has a process of riding the money to the substrate to be processed w = 12 ' for supplying the plasma processing gas to the circulator 12: a portion 13; a microwave generator J that holds the substrate to be processed on the upper surface of the substrate, and generates a plasma excitation microwave, and generates a 对 directional position 'to introduce the 彳 波 wave generated by the microwave into the processing container 12 The internal control unit and the control unit of the control unit (not in the figure: the step of the stoppage 7 is the step of the 4th substrate _ row plasma processing and the ^:12 series is included under the holding station 14 The bottom portion 17 of the side is an imf 乂❸ _ extending upwards 18. The side wall 18 is poetic. The bottom π of the processing container 12 is provided with an exhaust gas 13 for the exhaust gas 13 201028052. The upper side of the processing capacity n 12 has The opening, the field is made of a dielectric plate 16 disposed on the upper side of the processing container 12, and a 〇-shaped ring π between the dielectric plate 16 and the processing damper 12 serving as a sealing member to make the container 12 a sealable state. The microwave generator 15 of 21 is connected to the coaxial waveguide 24 for introducing microwaves through the mode converter 2'S3. For example, the TE generated by the microwave generation method 15 (the transverse electric field type microwave system is transmitted through the waveguide 23, the domain subtraction converter 22 is converted into the TEM (transverse electromagnetic field) mode, and then propagated in the coaxial waveguide 24. The coaxial guided wave The main body 24 includes a center conductor 25 disposed at the center in the radial direction, and a peripheral conductor 26 disposed radially outward of the core conductor 25. The upper end of the center conductor 25 is connected to the top plate region of the mode converter 22. The frequency at which the microwave is generated in the microwave generator 15 can be selected, for example, 2.45 GHz. Further, the waveguide 23 can be circular or rectangular in cross section. The dielectric plate 16 has a disk shape and is composed of a dielectric body. The lower side of the electric board 16 is provided with an annular recess 27 recessed in a tapered shape to easily generate standing waves due to the introduced microwave. By the recess 27, microwaves can be effectively used on the lower side of the dielectric board 16. In addition, the specific material of the dielectric plate 16 is quartz or alumina, etc. Further, the plasma processing apparatus 11 has a slow wave plate 28 that propagates microwaves introduced by the coaxial waveguide 24, and a plurality of Slot 29 for introducing microwaves into the circle of dielectric plate 16 The thin plate-shaped slot plate 30. The microwave generated by the microwave generator 15 propagates through the coaxial waveguide 24 through the slow wave plate 28, and is introduced into the dielectric plate 16 from the slot 29 provided in the slot plate 30. 201028052 The microwave of the dielectric plate generates an electric field directly under the dielectric plate 16, thereby generating plasma in the processing container 12. The holding platform 14 also serves as a high frequency electrode and is supported to extend vertically from the bottom portion 17 The insulating cylindrical support portion 31 has an annular shape formed between the conductive cylindrical support portion 32 extending vertically upward from the bottom portion 17 of the processing container 12 and the side wall 18 of the processing container 12 along the periphery of the cylindrical support portion 31. Exhaust passage 33. The upper portion of the exhaust passage 33 is provided with an annular buffer plate 34 having a plurality of through holes. Below the exhaust hole 19, an exhaust device 36 is connected through an exhaust pipe 35. The exhaust unit 36 has a vacuum pump such as a thirsty wheel molecular pump. The pressure inside the processing vessel 12 can be reduced to a desired degree of vacuum by the venting means 36. The RF (Radio Frequency) bias high frequency power supply 37 is electrically connected to the holding stage 14 via the matching unit 38 and the power supply rod 39. The high-frequency power source 37 outputs an appropriate specific frequency, such as a south frequency of 13.56 MHz, to control the ion energy attracted to the substrate W to be processed.匹配 The matching unit 38 is housed with an integrator to integrate the impedance of the high-frequency power source 37 side and the impedance of the load side of the electrode, the plasma, and the processing container 12, and the integrator is used to generate self-bias. Barrier capacitors. An electrostatic chuck 41 that holds the substrate W to be processed by electrostatic attraction is provided on the upper side of the holding table 14. Further, the radially outer side of the electrostatic chuck 41 is provided with a focus ring 42 which is annularly surrounded around the substrate w to be processed. The electrostatic chuck 41 sandwiches the electrode 43 composed of a conductive film between a pair of insulating films 44 and 45. The high voltage DC power supply is electrically connected to the electrode 43 through the switch 47 and the covered wire 48. By DC power supply 46, 15 ζυι〇28〇52, the DC lightning is fixed to the right, and the Coulomb force can be used to adsorb the substrate w to the manganese electrostatic clamp 41. The inside of the refrigerant 14 is provided with an annular ring extending in the circumferential direction. The chamber 51 is a cooling unit (the refrigerant is not cyclically supplied in the drawing, such as cold-& 52, 53 to supply a specific temperature (譬7 P). Water) The temperature of the refrigerant can be used to control the processing temperature of the substrate w on the electrostatic chuck 41. Further, the heat transfer gas (such as He gas) from the heat transfer gas supply unit (not shown) is permeated. The /, and g 54 are supplied between the upper side of the static electricity 41 and the inner surface of the substrate W to be processed. Next, the reaction gas supply unit 13 for supplying the reaction gas for electrical installation to the processing container 12 will be described in detail. The reaction gas supply unit 13 has a first reaction gas supply unit 61′ that supplies a reaction gas directly under the central region of the substrate to be processed w, and a second reaction gas that supplies a reaction gas obliquely toward the substrate to be processed w. The supply unit 62. Specifically, the first reaction gas supply unit 61 supplies the reaction gas in the direction of the arrow F in Fig. 1, and the second reaction gas supply unit 62 supplies the reaction gas in the direction of the arrow F2 in Fig. 1 . Two reaction The gas supply unit 62 supplies the reaction gas obliquely toward the central portion of the substrate w to be processed, which is the central region of the substrate W to be processed. The first reaction gas supply unit 61 and the second reaction gas supply unit 62 are the same. A reaction gas supply source (not shown in the drawings) is supplied with the same type of reaction gas. Here, the structure of the first reaction gas supply unit 61 will be described in detail first. The first reaction gas supply unit 61 is provided on the dielectric plate. 16 radial direction 201028052 The center and the lower side 63 of the opposing dielectric plate 16 are further retracted toward the inside of the dielectric plate 16. The dielectric plate 16 is provided with a housing: reactive gas supply portion 61. The accommodating portion 64. The first reaction gas is supplied. A 〇-shaped ring 65 is interposed between the 卩61 and the accommodating portion 64 to ensure the sealing property in the processing container 12.

The first reaction gas supply unit 61 is provided with supply of the reaction gas directly downward so that the reaction gas is blown to the supply hole 66 in the central region of the substrate W to be processed. The supply hole 66 is provided in a region exposed in the processing container 12 in the wall surface 67 opposite to the holding table 14 . Further, the wall 67 is flat. Further, the supply hole 66 of the first reaction gas supply portion 61 is disposed at the center in the radial direction of the dielectric plate 16. The plasma processing apparatus 11 is provided with a center guiding the coaxial waveguide 24. 25. The slot plate 3 and the dielectric plate 10 respectively penetrate the H body flow path 68 of the supply hole. The gas inlet formed at the upper end of the center conductor 25 = 5 ^ is provided with a gas such as an opening/closing chamber 7 or a flow rate I = 曰 of the mass flow controller. The reaction gas is supplied while the gas supply system 72 adjusts the grip or the like. Next, a schematic diagram of the second reaction gas supply unit & As shown! And Fig. 1 = near the loam of the bag 3, the inside of which is the reaction gas ':=== part 17 201028052 73 is disposed between the holding table 14 and the dielectric plate 16. Here, the annular portion 73 will be described in detail. Fig. 3 is an enlarged view of the annular portion 73 shown in Fig. 1 in the plasma processing apparatus of Fig. 1. As shown in Figures 1 to 3, the clothes are in shape. The crucible 73 is a wall portion 79a that extends straight in the up-down direction and is located on the inner diameter side, a wall portion 79b that extends straight in the vertical direction and is located on the outer diameter side, and extends straight in the left-right direction and is located on the side of the holding table 14 The wall portion 79c is formed by a wall portion 79d that connects the lower end portion of the wall portion 79a to the inner diameter side end portion of the wall portion 79c and extends straight in the oblique direction. Further, the annular portion 73 is provided with a supply of the reaction gas obliquely so that the reaction gas is blown to the plurality of supply holes 75 of the substrate W to be processed. The supply hole I5 has a circular hole shape. The supply hole 75 is provided in a wall portion 79d extending in the oblique direction. Specifically, an opening is provided in two portions of the wall portion in the direction perpendicular to the wall portion 79d. The angle of the supply hole 75 can be arbitrarily set in accordance with the direction in which the reverse gas is supplied. Here, the angle of the supply hole 75 is an angle at which the reaction gas is supplied obliquely by the first reaction gas supply unit 62, and is a straight line extending in the left-right direction through the center 78 in the vertical direction of the annular portion 73 (in the figure) The dotted line) and the angle Θ formed by the straight line extending toward the vertical direction of the wall portion 79d and indicated by a two-dot chain line in FIG. A plurality of supply holes 75 are equidistantly disposed in the circumferential direction of the annular turn 73. In this embodiment, eight supply holes are provided: The hanging portion 74 is also constituted by a tubular member. The reaction gas system from the outside of the processing container 12, i, D, and D, is supplied to the annular portion 73 through the inside of the hanging portion. The hanging portion 74 has a slightly elliptical cross section and protrudes inward from the side wall 18 ^ on the side of 201028052 and then extends vertically downward. The lower end portion 4 is connected to the annular portion 73. The gas supply system in which the above-described opening and closing valve or flow controller is interposed is also disposed on the outer side of the hanging portion 74. Here, the first reaction gas supply unit 62 is provided at a position directly above the holding table 14 so as to avoid the region directly above the substrate W to be processed held on the holding table 14. Specifically, the inner diameter of the annular annular portion Di is Di, the outer diameter of the substrate W to be processed is D2, and the inner diameter 环状 of the annular portion 73 is larger than the outer diameter d2 of the substrate W to be processed. Further, the lifting portion 74 is also disposed in a region that avoids the area immediately above the substrate to be processed w. The second reaction gas supply unit 62 is preferably disposed in the vicinity of the holding stage. Specifically, the annular portion 73 is disposed in the processing container 12, which is called a downflow region, and is not affected by the reaction gas θ of the first reverse gas supply portion 61. The plasma ❹ area is OK. The distance L of the center 78 in the vertical direction of the annular portion 73 indicated by a dotted line in the square-surface 77 1 of the substrate w to be processed held by the fixed stage 14 can be selected, for example, within 9 mm. Specific 値. Next, Xiang Ben invention - a real surface light processing device U to elaborate on the method of processing the W-filament of the substrate. First, the substrate to be processed w is held by the electrostatic chuck 41 on a predetermined stage provided in the processing container 12. Next, the microwave generator 15 is used to generate a microwave for money excitation. Thereafter, microwaves are introduced into the processing container 12 through the dielectric board 16 or the like.袂你, A _ 俊, from the central portion of the dielectric plate 16 toward the central region of the substrate W to be processed, the supply hole 66 placed in the first reaction gas supply portion 61 is supplied to the positive and negative gas The reaction gas is supplied obliquely to the central portion of the substrate W to be processed by the supply hole 75 provided in the annular portion of the second reaction gas supply unit 62. The substrate to be processed W is subjected to the above-described processing by the above method. In the plasma processing apparatus 11 and the plasma processing method, the first-second gas supply unit 61 that supplies the reaction gas directly under the central region of the substrate W to be processed and the central region of the substrate W to be processed are obliquely reacted. The second reaction gas supply unit 62 of the gas can uniformly supply the reaction gas to the entire substrate W to be processed. Further, the reaction gases supplied from the first and second reaction gas supply units 61 and 62 do not stay on the substrate W to be processed, and the retention of deposits can be suppressed. Further, the flow of the plasma reaching the substrate to be processed w is not blocked by the first reaction gas supply unit 62. Therefore, the uniformity of the surface when the substrate to be processed w is processed can be improved. Here, in the plasma processing apparatus 11 of the above configuration, the reaction gas supplied from the first reaction gas supply unit 61 and the reaction gas supplied from the first reaction gas supply unit 62 flow. Fig. 4 is a schematic view showing a flow pattern of a reaction gas supplied from a first reaction gas supply unit and a reaction gas supplied from a second reaction gas supply unit. In Fig. 4, the respective components constituting the plasma processing apparatus u are simplified. As shown in FIG. 4, the reaction gas supplied from the first reaction gas supply unit 61 is supplied directly to the central portion of the substrate to be processed 20 in the direction indicated by the arrow F], and is indicated by a broken line in FIG. The position 80 near the central area rebounds and flows upward. Here, since the first reaction gas supply unit 62 supplies the reaction gas in the direction indicated by the arrow F2, it is possible to suppress the reaction gas from being bounced due to the rebound. As a result, the reaction gas supplied from the first reaction gas supply unit 61 flows to the end portion of the substrate W to be processed in the direction indicated by the arrow F"3. It is presumed that the residence of the reaction gas as shown in Fig. 22 described above does not occur by such a mechanism. Fig. 5 and Fig. 6 are linear diagrams showing the relationship between the film thickness after film formation of the substrate W to be processed and the position of the substrate to be processed w in the plasma processing apparatus 11 according to the embodiment of the present invention. In Fig. 5 and Fig. 6, the vertical axis is the film thickness (□). The horizontal axis is the distance (mm) from the center. Further, Fig. 7 is a schematic view showing the X-axis, the γ-vehicle, the v-axis, and the w-axis of the substrate W to be processed in Figs. 5 and 6 . Fig. 5 and Fig. 6 are linear diagrams when the angle Θ at which the second reaction gas supply unit supplies the reaction gas is changed. Fig. 5 shows an angle θ at which the second reaction gas supply unit 62 supplies the reaction gas to 42. In the case of Fig. 6, the angle θ at which the second reaction gas supply unit 62 supplies the reaction gas is 24. Case. Further, in the case of Figs. 5 and 6, the central portion of the annular portion 73 has a diameter of 400 mm. The distance Li shown in Fig. 1 is 9 mm. In addition, FIG. 6 is a case where the plasma processing apparatus 丨丨 shown in FIG. 1 corresponds to the second reaction gas supply unit 62 obliquely toward the central region of the substrate W to be processed held on the holding stage 14. The angle at which the reaction gas is supplied. Here, in the case of Fig. 5, the ratio of the gas supply amount of the first reaction gas supply unit 61 to the gas supply amount 21 of the second reaction gas supply unit 62 is 32. μ The condition of the gas 8 of the supply unit 61 is such that The ratio of the +, / /, and , '° 篁 of the first reaction gas body supply amount to the second reaction gas supply unit 62 is 27:73. As shown in Fig. 5, when the angle Θ of the ❹ is 2% and the film thickness of the reaction gas region is supplied to the second reaction gas supply unit 62, β is thicker in the central region and the end portion of the substrate to be processed, and the central region is The area of the membrane between the end regions is almost linear and slightly W-shaped, but it is still relatively flat, and the image is uniform. That is, the substrate surface is uniformly processed. When the reaction gas is not separated, and the film thickness supplied from the second reaction gas supply unit 62 is the same as 24°, the position of the substrate to be processed w is again a. That is, the substrate surface is treated more uniformly. In the electric (fourth) device 11 of the above configuration, the reaction gas is supplied obliquely from the first substrate to the portion 62, and the surface uniformity at the time of processing 22 or the like can be improved. On the other hand, the supply amount of the graph and the structure of the conventional electric device are not adjusted by adjusting the ratio of = for a gas, but the processing of the substrate W to be processed cannot be improved. That is, the conventional plasma processing apparatus shown in Fig. 22 and the like [even if the ratio of the gas supply amount is changed, the degree of treatment on the substrate to be processed w is almost the same; F changes. Further, in the plasma processing apparatus of the present invention, each of the components constituting the second reaction gas supply unit 62 is disposed at a position away from the region directly above the substrate to be processed w, so that the components constituting the second reaction gas supply unit 62 can be reduced. Fatigue caused by plasma. Therefore, the life of the second reaction gas supply unit 62 can be improved. 22 201028052 = In the above embodiment, the second reaction gas supply unit for supplying the reaction gas to the substrate to be processed includes a crucible portion in which the wall portion is suspended from the annular portion, but not; And extending straight from the side wall to the inner diameter side to support = tsq ^ , . . . of the other embodiment of the plasma processing assembly, and a schematic sectional view of the piece, which is equivalent

G In Fig. 8, 盥圄】——r * ", the profile of Beibu.

In the second embodiment, the same components are given the same reference numerals, and as shown in FIG. 8, the money processing device 9 is obliquely directed to the annular portion 93 included in the second reaction portion 92 of the anti-money agency. The support portion 94 is provided in a hollow shape by a support portion % extending straight from the treatment volume ';, the side wall 18 toward the inner diameter side. The plasma processing device 91 is supplied externally. The gas supply system is supplied into the processing container 12 from the inside of the support portion 94 through the supply portion 95 provided in the annular portion. This structure borrows the same effect as described above. Further, in the above embodiment, the second reaction gas supply unit that supplies the reaction gas obliquely toward the substrate to be processed w includes a hanging portion that is annularly suspended from the side wall, but is not limited thereto. The second reaction gas supply unit that supplies the reaction gas obliquely to the substrate to be processed is embedded in the side wall of the processing container. Further, the electric blade treatment rupture may be such that the side wall of the processing container includes a protruding portion protruding from the white inner side, and the second reaction gas supply portion is buried in the ejector portion. 23 201028052 Slightly Fig. 9, which is an important component of the electropolymerization processing apparatus in this case, is equivalent to the section shown in Fig. 1. In Fig. 9, the bacterium 2 is the same as the two: the same: the member is given the 嶋 ^ "the side wall 82 of the electropolymerization processing device 81 is a sentence person a from the 1 brother / specifically to the inner diameter side The reaction gas is applied obliquely to the H-packaged Weir 84-series 85 series in the * mountain. It is provided on the plurality of supply holes of the annular portion 84 and is exposed to the oblique direction. In the case of the wall surface extending in the direction and the upper side of the 6-plate|the lower part, the protruding portion 83 is provided directly above the holding table 14 in the area of the processing target _ & That is, the wall surface of the protruding side is larger than the large outlet M3 radial d2. Further, the outer diameter of the substrate 3 is placed through the gas wall of the annular portion 84: the processing container can also be Obtain the same effect as above f9. Hunting from the second of this structure == Zhao can also be the annular part - the upper side of the small 贱 type = M4 lower side of the inner diameter of the 82 to the door == real _ state, The opening provided in the supply hole of the annular portion has a circular hole shape. However, the opening is not limited thereto, and eight supply holes are provided in the long hole-shaped open state extending in the circumferential direction or the radial direction, but the invention is not limited thereto. In addition, the annular portion of the above-described embodiment is composed of a plurality of wall portions extending straight in the up-and-down direction, the left and right 24 201028052 directions, and the oblique direction. However, the present invention is not limited thereto, and may include a curved shape. The wall portion has a cross section, and the wall portion constituting the annular portion may have an annular shape. Further, the second reaction gas supply portion of the above embodiment includes an annular portion, but is not limited thereto. The structure may be a structure that does not include the annular portion. For example, a supply hole may be provided at a lower end portion of the plurality of hanging portions, and the reaction gas may be supplied obliquely to the substrate to be processed w from the supply hole. ❹ ❹ In the second reaction gas supply unit of the above-described embodiment, the reaction gas is supplied obliquely to the central portion of the substrate W to be processed held on the holding stage. However, the present invention is not limited thereto, and the second reaction gas supply unit may be directed to = The reaction gas is supplied in the lateral direction of the center side of the substrate W to be processed on the stationary stage. Specifically, referring to Fig. 3, the angle θ of the reaction gas supplied from the second reaction gas supply unit is 〇. This method can also achieve the above effects That is, the reaction gas can be supplied to the substrate to be processed as a whole. Further, the reaction gases supplied from the first and second reaction gas supply portions do not stay on the substrate to be processed, so that the reaction can be suppressed. The above-mentioned situation is specifically illustrated by the drawings. Fig. 1 is a schematic cross-sectional view of important components of the plasma processing apparatus in this case, the phase of which is shown in Fig. 1. In Fig. 10 1 is the same as the second embodiment, and the same reference numerals are given to the same reference numerals, and the description thereof is omitted. Fig. u is a portion of the second reaction gas supply portion of the plasma processing apparatus shown in Fig. 10 from the direction of the arrow XI in Fig. 10 . Fig. 12 is an enlarged view of the XII portion shown in Fig. 1. The section shown by '10 is equivalent to the X-Χ section shown in Fig. 25 201028052. Referring to Fig. 10 to Fig. 12, the apparatus of the substrate I 〇1 <<1> is held to be held = 聋;; the electropolymerization process of the embodiment is carried out on the substrate 14 The second reaction gas supplied to the reaction (4) is supplied to the liquid P. The second reaction gas supply unit 2G2 has an annular ring shape 4 2 〇 8 and protrudes straight from the side of the annular portion to the outer diameter side. 3 dogs. [5 211 & 2111), 211. 3 protrusions 211 & 211 〇

The slightly equidistant ground s is placed in the circumferential direction of the annular portion. Specifically, the interval between the three projections 211a to 211c is approximately 12 分别. . The second reaction gas supply unit 2〇2 is formed in a flat shape and has an annular first assembly 2〇9a' corresponding to the protrusions 211a to 2Ue, and has a c-shaped cross section and has a protrusion 2Ua. ~2Uc corresponding to the protruding annular second component is formed by the engagement of the two. Figure 12

As shown in the figure, the cross section of the second reaction gas supply unit is slightly rectangular. Further, the cross section of the gas flow path 210 formed by joining the first unit 2〇9a and the second unit 209b is a slightly rectangular space. Further, the materials of the first and first components are, for example, quartz. The second reaction gas supply unit 202 is provided with 36 supply holes 215 for supplying the reaction gas into the processing container 12. The supply hole 215 supplies the reaction gas straightly toward the inner diameter side of the % portion 208. Specifically, the second component 20% constituting the second gas supply unit 2〇2 penetrates the wall portion on the inner diameter side in the radial direction. The supply hole 215 is provided at a position almost at the center in the vertical direction of the ring portion 208. The supply hole 215 has a circular hole shape, for example, cp 〇, which is 5 mm in size. The supply aperture 215 is formed by a laser such as 26 201028052 to form an opening. The 36 supply holes 215 are equidistantly disposed in the circumferential direction of the inner diameter surface 216 of the second gas supply portion 202. The second reaction gas supply unit 202 is disposed in the processing container 12 by three support portions 212a, 212b, and 212c provided on the side wall 18 of the processing container 12. Specifically, it is 12〇. The inner diameter surfaces 214a, 214b, and 214c of the three support portions 212a to 212c extending from the side wall 18 of the processing container 12 toward the inner diameter side and the three protrusions provided in the second reaction gas supply portion 202 are spaced apart. The outer diameter faces 213a, 213b, and 213c of the portions 2lla to 211c are attached to each other. Regarding the mounting position of the upper and lower annular portions 208, the annular portion 2〇8 is provided in a so-called downward flow region. Here, the support portion 212a is hollow, and the gas can be supplied to the gas flow path 21 provided in the second reaction gas supply unit 202 through the support portion 212a from the outside of the processing container 12. On the other hand, the other two support portions 212b and 212c have a solid shape in the middle, and the gas does not flow or flow out. In other words, the second reaction gas supply unit 202 supplies the gas into the gas flow path 21A through the support portion 212a and the protrusion 2Ua from the outside of the processing container 12, and supplies the gas from the set supply holes 215 to the center. The side is ejected to be supplied into the processing container 12. Further, the plasma processing apparatus 2〇1 shown in Fig. 10 has a temperature adjustment unit 203 which is provided inside the holding stage 14 and adjusts the temperature of the substrate to be processed w held on the holding stage 14. The temperature adjustment unit 2〇3 has a first temperature adjustment unit 2〇4 that adjusts the temperature of the central portion of the substrate to be processed w held by the holder 14 and the adjustment is held by the holding table 27 201028052 14 The second temperature adjustment unit 205 of the temperature of the end region around the central portion of the substrate W to be processed. Specifically, the first and second temperature adjustment sections 204, 205 each have a heater that controls the temperature. The first temperature adjustment unit 204 is provided at the center in the radial direction of the holding table 14. The second temperature adjustment portion 205 has an annular shape and is provided on the outer diameter side of the first temperature adjustment portion at a radial interval. The central portion and the end portion of the substrate W to be processed can have different temperatures by the first and second temperature adjusting portions 2〇4 and 2〇5, respectively.

degree. By the first and second temperature adjustment units 2〇4 and 2〇5, the temperatures of the central portion and the end portion of the substrate W to be processed can be individually controlled to further improve the processing of the substrate W to be processed. Surface uniformity. Further, the first and second temperature adjustment units 2, 4, 2, and 5 are controlled, respectively, and the plasma is placed as shown in Fig. 1, and the temperature is adjusted by the refrigerant. The electric power treatment device 201 is provided with a temperature adjustment portion urging 7 inside the cylindrical side wall 18 constituting the shoulder container 12 and the inside of the cover 4 217 provided on the upper side of the side wall. The temperature of the side wall u :: can be adjusted by the temperature adjustment means, 2. 7 to stabilize the temperature in the processing volume 11 12 . Cause: Temperature: conditioning;: can be cooled by heater or cold; = uniformity of the surface of the device TM. T ensures that the side wall 18 or the cover portion 217 of the ring method 28 201028052 208 constituting the second reaction gas supply unit 202 is formed of different components, and three supports are used for the substrate W to be processed. Since the portions 212a to 212c are supported by the inside of the processing container 12, they are separated from the temperature adjusting portions 206 and 207, and are in a state in which the temperature is stable. Therefore, the temperature adjustment units 206 and 207 can be utilized to reduce the influence of the temperature adjustment so that the amount of gas supplied to the supply hole 215 of the second reaction gas supply unit 202 is stabilized. Fig. 13 is a linear diagram showing the relationship between the batch number of the substrate to be processed and the etching rate specification 进行 after 40 batches of processing by the plasma processing apparatus of Fig. 10 and the electric power processing apparatus of Fig. 21. The horizontal axis is the batch number and the vertical axis is the etching rate specification. Here, it refers to the case where the measurement of the substrate of the first sheet of each batch is performed. Further, the etching rate specification 値 is an index indicating how much the individual etching rate and the average value change when the average 値 of all the etched samples is 1. In Fig. 13, the dot and the solid line indicate the case of the plasma processing apparatus shown in Fig. 10, and the square and the broken line indicate the case of the conventional plasma processing apparatus shown in Fig. 21. ▲ „ Refer to Fig. 13, in the case of the plasma processing apparatus shown in Fig. 10, the batch and the residual rate specifications are changed from 1. (9) to less than 1.G1. In the case of the plasma plasma processing apparatus shown, the lightning varies within the range of I8 to 1 〇 2. That is, the etch rate specification 値 variation with respect to the water treatment apparatus shown in Fig. 10 is less than 0.01, Fig. 21 0.04 ^ 装 装 众 众 装 装 装 装 装 装 装 装 装 装 装 装 装 装 装 装 装 装 钱 钱 钱 钱 钱 钱 14 14 14 14 14 14 14 14 14 14 29 29 29 29 29 29 29 29 29 29 29 29 29 29 A linear plot of the relationship between the lot number and the number of dust particles. The horizontal axis is the batch number 'The vertical axis is the number of fine dust particles. The lot number in Figure 14 is the same as the lot number in Figure 13. The dust particles are particles with a particle size of 130 nm or more. The dust particles are calculated by a dust particle detector (spi) (manufactured by KLA_Tenc〇r Co., Ltd.).

Referring to Fig. 14', the number of fine dust particles in the plasma processing apparatus shown in Fig. 1 is at most five between the respective times, and in most cases, it is less than five, and there are also cases. That is, it can be seen that the number of fine dust particles is extremely small. Since the plasma plasma processing apparatus shown in FIG. 21 has a dielectric plate in the vicinity of the supply hole, and the supply hole is exposed to the strong plasma, it is presumed that: the dust god is formed on the inner wall surface constituting the supply hole or the like. the reason. On the other hand, since the annular portion of the plasma processing apparatus shown in Fig. 10 is provided in the lower region, the supply hole is not exposed to the strong plasma, and therefore it is presumed that the fine dust particles are not easily formed.

Fig. 15 is a linear T of the relationship between the middle edge flow rate ratio and the surface uniformity of the substrate to be processed when the plasma processing apparatus of Fig. 10 is used for the treatment. The horizontal axis is the flow ratio (%) of the center/edge, and the vertical axis is the processing variation (^). The center/edge flow ratio of the crossbar refers to the center, i.e., the ratio of the amount of gas supplied from the first reactive gas supply unit to the edge, i.e., the amount of gas supplied from the second reaction gas supply unit. Specifically, 0/0 indicates that the gas is supplied only by the first reaction gas supply unit, and 70% of the total gas supply amount is not included, and the gas supply amount supplied from the first reaction gas supply unit is 7〇%. The amount of gas supplied from the second reaction gas supply unit was 30%. Also, the processing variant refers to the difference between the maximum 値 of the surface etch and the minimum 値 of 30 201028052 divided by the multi-point average 面 of the surface. As will be described later, the distribution of the bell shape is a positive variation, and the case of the u shape is a negative variation. Fig. 16 is a view showing the film thickness of the substrate W to be processed and the position of the substrate W to be processed when the substrate to be processed of the plasma processing apparatus of Fig. 10 is processed with the center/edge flow rate ratio of 0% indicated by the arrow in Fig. 15. A linear graph of the relationship. Fig. 17 is a view showing the film thickness of the substrate W to be processed and the substrate to be processed when the processed substrate of the plasma processing apparatus of Fig. 1 is processed at a center/edge flow ratio of 70% indicated by an arrow G2 in Fig. 15; A linear plot of the relationship of the position of W. 18 is a film thickness of the substrate to be processed w and the substrate W to be processed when the substrate to be processed of the plasma processing apparatus of the crucible is processed at a center/edge flow ratio of 20% indicated by an arrow G3 in FIG. A linear plot of the relationship of positions. In addition, the vertical axis and the horizontal axis of the linear diagram shown in FIGS. 16 to 18 are the same as the vertical axis and the horizontal axis of the linear diagrams shown in FIGS. 4 and 5, and thus the description thereof will be omitted. Referring to Fig. 15, when the center/edge flow ratio is 〇%, the processing variation ❹ is about ~33%, which is a so-called ϋ-shaped distribution. That is, as shown in Fig. 16, the center of the substrate W to be processed is etched in a large amount so that the film thickness at the center is reduced, and the amount of etching on the end side of the substrate to be processed is reduced, so that the film thickness at the end portion is increased. Then, if the center/edge flow ratio is larger, the processing variation 兪 is close to 0%, and when the center/edge flow ratio is 7〇%, it becomes a bell-shaped distribution of & That is, as shown in Fig. ’, the processing variation is about +15%, and the end side of the substrate to be processed is more famous than the center of the substrate to be processed. From this result, it can be seen that the U-shaped distribution can be continuously controlled to the bell shape 201028052 cloth. Then, in the linear diagram, the center/edge flow ratio is changed, i.e., the gas supply i supplied from the first and second reaction gas supply units is adjusted, and the change in the process is close to 〇. /0. By making the center/edge flow ratio of the linear graph shown in Fig. 15 about 2%, the processing variation of the shape shown in Fig. 18 can be realized. In contrast to the plasma plasma processing apparatus shown in Fig. 21, the linear map exhibits a shape slightly parallel to the horizontal axis at a position away from the processing variation, so that even if the center/edge flow ratio is changed, processing variation is required. It is still very difficult for 〇%. Can also be set arbitrarily. Further, the pain of the supply hole may be a shape. Further, although the supply hole of the above embodiment has a circular hole shape, the present invention is not limited thereto, and may be a long hole shape or a plurality of (four) holes. The position is not limited to the almost central position, and may be the lower side or the upper side in the up and down direction. χ, the size of the opening area of the supply and supply holes, and the number of supply holes is not limited to the above quantity.

Further, in the above embodiment, the first component and the second component are configured to form a second reaction gas supply portion, and the annular portion is formed by three support portions, and is *_».

In the present embodiment, the second reaction gas supply unit 222 that supplies the reaction gas in the lateral direction of the center side of the substrate W to be processed held on the holding stage 14 is provided. The temperature adjustment unit 223 provided inside the holding stage 14 has a first temperature adjustment unit 224 located at the center in the radial direction of the holding stage 14, and an annular second temperature adjustment unit 225 located on the outer diameter side of the first temperature adjustment unit 224. A part of the side wall 82 of the processing container 12 constituting the electric component processing device 221 protrudes inward in the radial direction. The protruding portions 229 are formed in a ring shape in succession. Then, the inner diameter surface 228 of the projection 229 is provided with a gas supply hole 231 which is open to the right side. A gas flow path 230 from the outside of the processing container 12 to the supply hole 231 is formed in the side wall 82. The supply hole 231 is an opening having a circular hole shape. The plurality of supply holes 231 are disposed equidistantly in the circumferential direction. Further, the inside of the lower side of the side wall 82 of the gas flow path 230 and the inside of the upper side of the side wall 82 are interposed therebetween, and the temperature adjusting portions 226 and 227 are provided as in the plasma processing apparatus shown in Fig. 10 described above. Such a structure can achieve the same effect as described above. In the above-described embodiment, the first reaction gas supply unit included in the plasma processing apparatus is located at a position immediately above the holding table, and is not limited thereto. The poly processing device may also have the following structure. That is, the plasma processing apparatus of the present invention has a holding table on which the substrate to be processed is held, and includes a bottom portion on the lower side of the holding table and an annular side wall extending upward from the periphery of the bottom portion. And a processing container for performing plasma treatment on the substrate to be processed; a plasma generating mechanism for generating plasma in the processing container 33 201028052; and a reaction for supplying the processing gas for plasma processing into the processing container Gas supply unit. Here, the reaction gas supply unit includes a first reaction gas supply unit that supplies a reaction gas directly under the central region of the substrate to be processed held on the holding stage, and includes a holding unit that is held away from the holding table. The upper portion of the upper surface of the substrate to be processed is provided on the inner diameter side of the side wall at an upper portion than the holding table, and the reaction gas is supplied toward the center side of the substrate to be processed held on the holding table. a second reaction gas supply unit. Here, the position above the holding platform refers to the position in the up-and-down direction of the fixed table, which is higher than the holding table. A plasma processing apparatus 241 of such a configuration is shown in Fig. 20. The annular portion of the second reaction gas supply unit 242 of the plasma processing apparatus 241 shown in FIG. 20 is disposed at a position directly above the substrate to be processed held on the holding table 14 and is set to be relatively constant. The position on the outer diameter side of the area directly above the stage 14 is the same as that of the electropolymerization processing apparatus shown in Fig. 除了 except for the point on the inner diameter side of the side wall 18. Specifically, the annular portion is disposed on the outer diameter side of the outer control surface of the fixed table 14. That is to say, the jade ridge can also be placed on the area directly above the fixed table 14 to be more squeaky. The same effect as described above can also be achieved by the structure. Further, the electric system shown in Fig. 10, Fig. 19, and Fig. 20 is not limited to the holding stage (4) and the second temperature-difficult portion, and may be provided outside the stage. Further, the first and the second full portion may be divided in the radial direction or the circumferential direction, or may be divided into J in the up and down direction. That is to say, the temperature adjustment department of the brother-and brothers is composed of a plurality of components 34 201028052. Further, the first and second temperature adjustment portions may be formed by body molding. That is, for example, a heater which can be integrally formed by adjusting the temperature of the center portion and the end portion can be utilized. Further, the first and second temperature adjustment portions may not be provided. Further, similarly, the temperature adjusting portion may not be provided on the side wall or the like. Of course, the plasma processing apparatus shown in Fig. 1 or Fig. 9 may be provided with each temperature adjusting portion as needed. Further, in the first reaction gas supply unit of the above-described embodiment, the wall surface facing the crucible is flat. However, the present invention is not limited thereto, and the portion provided with the supply hole may protrude from the holder side. Further, although the reaction gases supplied from the first and second reaction gas supply units of the above-described embodiment are of the same type, the present invention is not limited thereto, and the type of the reaction gas supplied from the first reaction gas supply unit and the second reaction gas supply unit are supplied. The type of reaction gas may vary. Further, the first reaction gas supply unit is configured such that the size of the processing container, the position of the holding table, the size of the substrate to be processed, and the like constitute the size of the device, as long as the first reaction gas supply unit is supplied almost directly downward. Gas can be. That is, the angle θ is made close to 9 〇. . This structure can also achieve the same effects as described above. Further, in the plasma processing apparatus of the above embodiment, the microwave is used as the plasma source. The source is not limited thereto, and the ICp (JnductiVely_c〇Upled) may be used.

Plasma, inductively coupled plasma) or ECR (Electron Cyclotron)

Resoannce; electron cyclotron resonance) plasma, parallel plate type plasma, etc. as a plasma processing device for plasma sources. The embodiments of the present invention have been described above with reference to the drawings, but the present invention is not limited to the embodiments of the drawings. For the embodiments of the drawings, various modifications and changes can be made within the scope of the same or equivalent. The plasma processing apparatus and the plasma processing method of the present invention can be effectively utilized in a case where it is required to improve the surface uniformity of the substrate to be processed. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing essential components of a plasma processing apparatus according to an embodiment of the present invention. Fig. 2 is a schematic view of the vicinity of the annular portion included in the second reaction gas supply unit of the plasma processing apparatus of Fig. 1 as seen from the direction of the arrow II in Fig. 1 . Fig. 3 is an enlarged view showing a portion of the plasma processing apparatus of Fig. i. Fig. 4 is a view showing a flow pattern of a reaction gas supplied from a first reaction gas supply unit and a reaction gas supplied from a second reaction gas supply unit. Fig. 5 shows an angle Θ at which the second reaction gas supply unit supplies the reaction gas in the plasma processing apparatus according to the embodiment of the present invention. A linear graph of the relationship between the film thickness of the substrate W to be processed and the position of the substrate w to be processed. Fig. 6 shows a plasma processing apparatus according to an embodiment of the present invention, in which the angle θ at which the second reaction gas supply unit supplies the reaction gas is 24. A linear graph of the relationship between the film thickness of the substrate W to be processed and the position of the substrate w to be processed. 36 201028052 FIG. 7 is a schematic diagram of the 基板 axis, the γ axis, the V axis, and the W axis of the substrate W to be processed in FIGS. 5 and 6 . Fig. 8 is a schematic cross-sectional view showing an essential part of a plasma processing apparatus according to another embodiment of the present invention, which corresponds to the cross section shown in Fig. 1. Fig. 9 is a schematic cross-sectional view showing the essential components of the plasma processing apparatus according to another embodiment of the present invention, which corresponds to the cross section shown in Fig. 1. The figure shows a schematic cross-sectional view of a plasma processing apparatus according to still another embodiment of the present invention, which corresponds to the cross section shown in Fig. 1. Fig. U is a schematic view showing a second reaction gas supply unit provided in the plasma processing apparatus of Fig. 10 from the direction of the arrow 图 in Fig. 1A. Fig. 12 is a partially enlarged cross-sectional view showing a second reaction gas supply unit provided in the plasma processing apparatus of Fig. 10. Fig. 13 is a linear diagram showing the relationship between the batch number of the substrate to be processed and the etching rate specification ❹ 利用 after the plasma processing apparatus of Fig. 10 and the plasma processing apparatus of Fig. 21 are used. Fig. 14 is a linear diagram showing the relationship between the number of substrates to be processed and the number of fine dust particles after being treated by the plasma processing apparatus of Fig. 10. Fig. 15 is a linear diagram showing the relationship between the center/edge flow ratio at the time of processing by the plasma processing apparatus of Fig. 10 and the surface uniformity of the substrate to be processed. Figure 16 is a view showing the film thickness of the substrate W to be processed and the position of the substrate boundary to be processed when the substrate to be processed of the plasma processing apparatus of Figure 10 is processed by the center/edge flow ratio indicated by the arrow & 37 201028052 Linear graph of relationships. Fig. 17 is a view showing the film thickness of the substrate to be processed w and the position of the substrate to be processed w when the substrate to be processed of the electropolymerization processing apparatus of the 10 is processed by the center/edge flow ratio shown by the arrow g2 in Fig. 15 . A linear graph of the relationship. Figure 18 is a view showing the processed substrate of the electric processing apparatus of Figure 1G with the center/edge flow ratio indicated by arrow g3 in Figure 15

A linear graph of the relationship between the film thickness of the substrate W to be processed and the position of the substrate W to be processed. Fig. 19 is a schematic cross-sectional view showing the essential components of the plasma processing apparatus according to still another embodiment of the present invention, which corresponds to the cross section shown in Fig. 1. 2 is a schematic cross-sectional view of another embodiment of the electrosurgical device of the present invention, which corresponds to the cross-section shown in FIG.

It is understood that a portion of the plasma processing device that supplies the reaction gas to the reaction gas portion supply portion is provided at two places. FIG. 22 is a partial outline of the signal processing device directly above the substrate W to be processed; There is a section of the map shown in Figure 21. [Main component symbol description]

Dl The inner diameter of the annular portion D2 The outer diameter of the substrate to be processed 38 201028052

Fi ' F2 ' F3 arrow Gj, G2, G3 arrow L! Distance W Substrate to be processed 11, 81, 91, 101, m, 20 Bu 221, 241 Plasma processing unit 12, 87, 102 Processing container 13 Reaction gas supply unit

14, 114 Holder 15 Microwave generator 16, 103, 112 Dielectric plate 17 Bottom 18, 82, 105 Side wall 19 Vent hole 20, 65 Type 0 ring 21 Matching box

22 mode converter 23 waveguide tube 24 coaxial waveguide 25 center conductor 26 peripheral conductor 27 recess 28 slow wave plate 29 slot 30 slot plate 39 201028052 31 ' 32 cylindrical support 33 exhaust passage 34 buffer plate 35 row Air pipe 36 Exhaust device 37 South frequency power supply 38 Matching unit 39 Power supply rod 41 Electrostatic clamp 42 Focus ring 43 Electrode 44, 45 Insulation film 46 DC power supply 47 Switch 48 Covered wire 51 Refrigerant chamber 52, 53 Pipe 54 Gas supply pipe 61, 104, 113 first reaction gas supply unit 62, 92, 106, 115, 202, 222, 242 second reaction gas supply unit 63 lower 64 accommodation portion 66, 75, 85, 95, 215, 231 supply hole 201028052 67, 86 , 88 wall 68, 89, 210, 230 gas flow path 69 gas inlet 70 opening and closing valve 71 flow controller 72 gas supply system 73, 84, 93, 208 annular portion 74 hanging portion 76 end portion 77 upper 78 center 79a, 79b, 79c, 79d Wall portion 79e Straight line 80 Position 83, 229 Projection portion 94, 212a, 212b, 212c Support portion 116 Region 203, 204, 205, 206, 207, 223, 224, 225, 226, 227 Temperature adjustment portion 209a First component 209b second component 211a, 211b, 211c protrusion 213a, 213b, 213c outer diameter surface 214a, 214b, 214c, 216, 228 inner diameter surface 41 201028052 217 cover

42

Claims (1)

201028052 VII. Patent application scope: 1. A plasma processing device, comprising: a processing container for performing plasma processing on a substrate to be processed therein; a holding table disposed in the processing container and holding the same a substrate to be processed thereon; a plasma generating mechanism for generating a plasma in the processing container; and a q reaction gas supply unit for supplying a plasma for processing the plasma to the processing container; wherein the reaction gas supply unit The first reaction gas supply unit supplies the reaction gas directly under the central region of the substrate to be processed held on the holding table; and the second reaction gas supply unit is kept away from The region immediately above the predetermined substrate is placed at a position 'directly above the holding table on the fixed stage, and the reaction gas is supplied toward the center side of the substrate to be processed held on the holding table. 2. The plasma processing apparatus of claim 1, wherein the second reaction gas supply unit is disposed in the vicinity of the holding stage. A plasma processing apparatus according to the invention, wherein the second reaction gas supply unit supplies the reaction gas obliquely toward a central portion of the substrate to be processed held on the holding stage. In the electric power processing apparatus of item i, the second reaction supply unit supplies the reaction gas in a lateral direction toward the center side of the substrate to be processed which is formed on the holding table 43 201028052. 5. The plasma processing apparatus according to claim 1, wherein the second reaction gas supply unit includes an annular portion, and the annular portion is provided with a supply hole for supplying a reaction gas. 6. The plasma processing apparatus of claim 5, wherein the substrate to be processed is in the shape of a disk, and the annular portion is annular, and an inner diameter of the annular portion is larger than that of the substrate to be processed. The outer diameter is large. 7. The plasma processing apparatus of claim 1, wherein the processing container comprises a bottom portion located on a lower side of the holding stage, and a side wall extending upward from a periphery of the bottom portion, the second reaction gas supply The department is embedded in the side wall. 8. The plasma processing apparatus of claim 7, wherein the side wall includes a protruding portion that protrudes inward, and the second reactive gas supply portion is embedded in the protruding portion. 9. The plasma processing apparatus of claim 1, wherein the plasma generating mechanism comprises a microwave generator for generating microwaves for plasma excitation, and an opposite position disposed on the holding station, and introducing the microwaves a dielectric plate in the processing container; the first reactive gas supply portion is disposed at a central portion of the dielectric plate. 10. The plasma processing apparatus according to claim 1, further comprising a first temperature adjustment unit that adjusts a temperature of a central portion of the substrate to be processed held by the holder, and the adjustment is located a second temperature adjustment unit for the temperature of the end portion of the central portion of the substrate to be processed, 44 201028052. 11. The plasma processing apparatus of claim 10, wherein the first and second temperature adjustment units are respectively disposed inside the holding stage. 12. The plasma processing apparatus of claim 10, wherein at least one of the first and second temperature adjustment sections is divided into a plurality of components. 13. The plasma processing apparatus of claim 1, wherein the processing container comprises a bottom portion on a lower side of the holding table and a side wall extending upward from a periphery of the bottom portion, and has a temperature for adjusting the side wall Side wall temperature adjustment unit. 14. The plasma processing apparatus of claim 13, wherein the sidewall temperature adjustment portion is disposed inside the sidewall. 15. A plasma processing method for performing plasma treatment on a substrate to be processed, comprising: a step of holding a substrate to be processed on a holding stage disposed in a processing container; generating microwave for plasma excitation a step of introducing a microwave into the processing container by using a dielectric plate; and supplying a reaction gas directly from a central portion of the dielectric plate toward a central portion of the substrate to be processed, and being held from the avoidance The step of feeding the reaction gas 45 201028052 obliquely to the substrate to be processed is held in the region directly above the substrate to be processed on the stage. 16. A plasma processing apparatus comprising: a holding station for holding a substrate to be processed thereon; and a processing container including a bottom portion on a lower side of the holding table and extending upward from a periphery of the bottom portion An annular side wall for performing plasma treatment on the substrate to be processed; a plasma generating mechanism for generating plasma in the processing container; and a reaction gas supply portion for discharging the plasma The processing gas supply unit is supplied to the processing container; wherein the reaction gas supply unit includes: a first reaction gas supply unit directly below the central region of the substrate to be processed held on the holding stage The reaction gas is supplied; and the second reaction gas supply unit is disposed on the inner diameter side of the side wall and is higher than the holding table, so as to avoid the region directly above the substrate to be processed held by the holding port. The annular portion of the position supplies the reaction gas toward the center side of the substrate to be processed held on the holding table. The plasma processing apparatus of claim 16, wherein the annular portion is disposed on an outer diameter side of the holding table. 18. The plasma processing apparatus of claim 16 which has a first temperature adjustment unit for adjusting a temperature of a central portion of the substrate to be processed held by the holder, and the adjustment is located at 46 201028052 A second temperature adjustment unit for determining the temperature of the end region around the central portion of the substrate to be processed. 19. The plasma processing apparatus of claim 18, wherein the first and second temperature adjustment units are respectively disposed inside the holding stage. 20. The plasma processing apparatus of claim 18, wherein at least one of the first and second temperature adjustment sections is divided into a plurality of components. 47