201015651 六、發明說明： 【發明所屬之技術領域】 本發明係關於同時執行多數裝置之電特性檢查的被檢 查體之檢査方法，且更詳細而言，係關於即使由於特定通 道之不良狀況產生檢查不良，亦可以恢復其檢查不良之被 檢査體之檢査方法及被檢查用程式。 & 【先前技術】 作爲以往之檢查裝置的探針裝置係如第3圖所示般， 具備有互相鄰接之裝載室1和探針室2。裝載室1具備有 以匣盒單位收納多片晶圓W之匣盒收納部，和自匣盒一 片一片搬出搬入晶圓W之晶圓搬運機構，和在藉由晶圓 搬運機構搬運晶圓W之間，執行晶圓之預對準的預對準 機構。探針室2具備保持晶圓W，構成可在X、γ、Z及Θ 方向移動之載置台3,和具有接觸於被載置在該載置台3 φ 上之晶圓W之所有裝置中，多個裝置之電極墊之多數探 針4A的探針卡4’和藉由卡支持器（無圖式）固定該探針卡 4之固定機構5’和電性連接探針卡4和測試頭τ之連接 環6，被構成在控制裝置之控制下經測試頭τ、連接頭6 及探針卡4，使無圖式之測試機每次和多個裝置電性接觸 而執行電特性檢查。並且，在第3圖中，7爲與載置台3 共同動作而執行晶圓W和探針卡4之定位的對準機構， 7A爲上攝影機，7B爲下攝影機，8爲安裝有探針卡3之 固定機構5的頂板。 -5- 201015651 而且，例如第4圖所示般，於使用藉由一次接觸同時 檢查X方向之兩個份裝置的探針卡4之時’則如第4圖之 箭號所示般，使載置台3朝X方向右方移動’探針卡在最 初之接觸位置P1與兩個份之裝置D電性接觸而執行檢查 之後，當每次以兩個裝置D如第4圖之箭號所示般朝X 方向索引進給，而在接觸位置P2結束第一行之最後的兩 個份之裝置D檢査時，僅裝置1個份朝Y方向下方索引 進給，在第2行中係朝與第1行相反方向之X方向左方向 執行每次兩個裝置D之檢查。針對各行之裝置D以相同 要領重複檢查，針對晶圓W之所有裝置執行電特性檢查 ，若爲不良品裝置D時則檢測出其裝置D。然後’當結束 一片晶圓W之檢査時，與下一個晶圓W交換，以相同程 序針對交換後之晶圓W執行電特性檢查。並且’第4圖 表示至晶圓W之途中的檢查結果，同圖之4A表示檢查途 中之探針卡之探針。再者，晶圓W內之粗線表示成爲檢 査對象之裝置D。 但是，初次檢査之結果，當裝置D之不良品率超過容 許範圍時，接著針對其晶圓W再一次執行相同之檢查而 確認不良品率。若在第2次檢査中不良品率縮小在容許範 圍內時，則與下一個晶圓W交換而執行檢査。 【發明內容】 (發明所欲解決之課題） 但是，在初次之檢查中，如第4圖以陰影線所示，每 -6 - 201015651 特定裝置D有規則性產生檢查不良之情形。此時，即使以 初次相同之程序執行第2次檢查，亦僅取得相同結果，不 降低具有檢查不良之裝置D(在第4圖中，以陰影線表示 之裝置）的產生數，若如此判斷不良品時良率則下降。再 者’於再檢査時花費多餘之時間，測試機之運轉效率下降 ο 本發明係爲了解決上述課題而所硏究出，其目的在於 提供在初次檢查中每特定裝置規則性產生檢查不良時，可 以在第2次檢查中確認其檢査不良是否由於裝置不良所引 起者，進而可以提高良率，並且可以消除白費執行第2次 檢查的情形，並可以提高測試機之運轉效率的被檢查體之 檢查方法及被檢査體之檢査用程式。 (用以解決課題之手段） 本發明者係針對第4圖所示般之檢査不良產生原因， φ 而進行各種檢討之結果，取得在初次檢查中於特定裝置產 生規則性檢查不良係在探針卡或測試機側之通道具有問題 之見解。 本發明係鑑於上述見解而所硏究出，申請專利範圍第 1項所記載之被檢查體之檢查方法係在控制裝置之控制下 ，使載置被檢查體之載置台移動，在上述被檢查體之所有 裝置中，使探針卡之多數探針電性接觸於多個裝置，針對 上述所有裝置每次執行多個份電特性檢查，其特徵爲：在 結束上述所有裝置之電特性檢查之後，上述多數探針接觸 201015651 之裝置中’於每特定裝置產生檢査不良之時’針對上述所 有之裝置執行再檢査’於執行再檢查時’將上述探針卡和 上述被檢查體接觸之位置從在上一次檢查之接觸位置至少 偏移一個裝置份，每次執行多個份上述裝置之電特性檢查 〇 再者，本發明之申請專利範圍第2項所記載之被檢查 體之檢査方法一種被檢査體，係在控制裝置之控制下，使 載置被檢查體之載置台移動，上述被檢査體之所有裝置中 ，使探針卡之多數探針電性接觸於多個裝置，針對上述所 有裝置每次執行多個份的電特性檢查，其特徵爲：具備經 上述載置台，使上述被檢查體每次移動多個裝置份，並使 上述被檢查體和上述探針卡電性接觸而每次執行多個份上 述裝置之電特性檢查的第1工程；於結束上述所有裝置之 檢查之後，檢測出上述多數探針接觸之裝置中，每特定裝 置是否產生有檢查不良之第2工程；和於每上述特定裝置 產生檢查不良之時，實施再檢查之第3工程，上述第3工 程具備將上述被檢査體和上述探針卡最初接觸之位置，從 在上一次檢查之最初接觸位置至少偏移一個裝置份之工程 ;和從此次之最初接觸位置每次執行多個份上述裝置之電 特性檢查之工程。 再者’本發明之申請專利範圍第3項所記載之被檢查 體之檢查用程式，是一種被檢查體之檢查用程式，藉由驅 動電腦’使載置被檢查體之載置台移動，在上述被檢査體 之所有裝置中，使探針卡之多數探針電性接觸於多個裝置 -8 - 201015651 ，針對上述所有裝置每次執行多個份的電特性檢查，其特 徵爲：在結束上述所有裝置之電特性檢查之後，上述多數 探針接觸之裝置中，於每特定裝置產生檢查不良之時，針 對上述所有之裝置執行再檢查，於執行再檢查時，將上述 探針卡和上述被檢查體接觸之位置從在上一次檢查之接觸 位置至少偏移一個裝置份，每次以執行多個份上述裝置之 電特性檢查。 & 再者，本發明之申請專利範圍第4項所記載之被檢查 體之檢查用程式，係藉由驅動電腦，使載置被檢查體之載 置台移動，上述被檢査體之所有裝置中，使探針卡之多數 探針各自電性接觸於多個裝置，針對上述所有裝置每次執 行多個份的電特性檢查，其特徵爲：使上述電腦驅動而實 行下述工程，經上述載置台，使上述被檢査體每次移動多 個裝置份，並使上述被檢查體和上述探針卡電性接觸而每 次執行多個份上述裝置之電特性檢査的第1工程；於結束 φ 上述所有裝置之檢查之後，檢測出上述多數探針接觸之裝 置中，每特定裝置是否產生有檢査不良之第2工程；和 於每上述特定裝置產生檢查不良之時，實施再檢查之第3 工程’在上述第3工程中，實行將上述被檢查體和上述探 針卡最初接觸之位置，從在上一次檢査之最初接觸位置至 少偏移一個裝置份之工程；和從此次之最初接觸位置每次 執行多個份上述裝置之電特性檢查之工程。 [發明效果] -9- 201015651 若藉由本發明，則可以提供在初次檢査中每特定裝置 規則性產生檢查不良時，可以在第2次檢查中確認其檢查 不良是否由於裝置不良所引起者，進而可以提高良率，並 且可以消除白費執行第2次檢查的情形，並可以提高測試 機之運轉效率的被檢查體之檢查方法及被檢査體之檢查用 程式。 【實施方式】 以下，根據第1圖、第2圖所示之實施型態說明本發 明。並且，各圖中，第1圖表示用以實施本發明之被檢査 體之檢查方法的檢查裝置之一例的構成圖，第2圖（a)、 (b)爲各表示具有藉由使用第1圖所示之檢查裝置之檢查方 法而引起之檢查不良的裝置之分布狀態的晶圓之俯視圖， (a)爲表示初次之檢查之圖式，（b)爲表示第2次檢查之圖 式。 首先，針對實施本實施型態之被檢查體之檢查方法的 檢查裝置（探針裝置）予以說明。本實施型態之探針裝置10 係如第1圖所示般，在探針室內具備可朝χ、γ、ζ及θ 方向移動之載置台11，和被配置在載置台11上方之探針 卡12，和執行載置台丨丨上之晶圓W和探針卡12之定位 之對準機構13，被構成在控制裝置14之控制下，載置台 11和對準機構13合作，執行晶圓W之裝置之多數電極墊 和探針卡12之多數探針12Α之定位之後，載置台11將晶 圓W索引進給而執行晶圓W之各裝置之電特性檢查。 -10- 201015651 載置台11係如第1圖所示般，具有藉由X方向驅動 機構、Y方向驅動機構及z方向驅動機構而所構成之驅動 機構1 1 A。因此，載置台1 1係在控制裝置1 4之控制下， 經驅動機構11A構成移動至X、Y、Z及Θ方向。 探針卡12係如第1圖所示般，具有多數探針卡12A ，經卡支持器15而被固定在頂板16。多數之探針12A係 被構成形成在晶圓W之多數裝置D(參照第2圖）中，至少 $ 與兩個裝置D接觸。多數探針12A同時接觸之裝置D藉 由裝置D之種類而不同，有在縱軸各以多個配列成矩陣狀 之情形，或在橫方向或縱方向至少配列兩個之情形。在本 實施型態中，多數探針12A係被構成與如第2圖（a)、（b) 所示般在橫方向配列兩個之裝置D接觸。 對準機構13係如第1圖所示般，具備有在載置台11 和探針卡12之間移動之第1照相機13A，和在載置台11 附設於側方之第2攝影機13B，和固定第1攝影機13A之 φ 對準橋13C。第1攝影機13A係經對準橋13C在探針室之 深部和探針中心（位於探針卡之中心之延長線上）之間移動 ，在探針中心攝影朝X、Y方向移動之載置台11上之晶 圓W。第2攝影機13Β係經載置台11朝探針卡12之探針 12Α之正下方移動，在該位置攝影探針12Α。 控制裝置14係以電腦爲主體而構成，該電腦具備記 憶有本發明之檢查用程式或其他程式，還有各種檢查用之 資料的記憶部14Α，根據來自第1、2攝影機13Α、13Β之 攝影訊號執行畫像處理之畫像處理部14Β，和在記憶部 -11 - 201015651 14A及畫像處理部14B之間接收發送各種資料而進行運算 處理之中央運算處理部14C。中央運算處理部14C自記憶 部14A讀出檢查用程式等，控制載置台11、對準機構13 等之構成機器，或是按目的對表示檢查結果之數値資料或 畫像資料進行各種資料加工。 接著，針對使用本發明之被檢查體之檢査用程式之一 實施型態的檢查方法予以說明。 當藉由本實施型態之檢査用程式，控制裝置14之電 腦驅動時，中央運算處理部14C自記憶部14A讀出檢查用 程式，實行本實施型態之檢查方法。當實行本實施型態之 檢査方法時，自裝載室接收晶圓W之載置台11經驅動機 構11A朝X、Y方向移動，並且以特定角度範圍朝Θ方向 旋轉而將晶圓W之切割道對齊X、Y方向。 並與此並行，以對準機構13之第2攝影機13B測量 探針12A之針頭位置，並以第1攝影機13 A測量對應於 探針1 2 A之晶圓W之電極墊，依此於執行晶圓W和探針 卡12之對準之後，執行晶圓W之檢查。 於對準後，載置台1 1使最初應檢查之裝置D朝探針 卡12之正下方移動，從此位置使晶圓w上升，使最初之 兩個份之裝置D之多數電極墊與對應於此之多數探針12A 接觸，並且超速驅動，使多數電極墊和多數探針12A電性 接觸，執行兩個份之裝置D之電特性檢查。接著，與以往 相同當載置台11將晶圓W各以兩個裝置份朝X方向右方 索引進給時，同時在裝置之行交替之際，朝γ方向下方索 -12- 201015651 引進給裝置1個份，如第2圖（a)所示般，一面切換索引進 • 給之方向一面一次執行兩個份的電特性檢查至最後裝置d 爲止。 於針對晶圓W之所有裝置結束檢查之後，若裝置之 檢査不良率在容許範圍內時，則與下一個晶圓W交換， 針對交換後之晶圓W以相同要領執行檢査^ 但是’針對晶圓W之所有裝置D進行檢查之結果， 0 在中央運算處理部14C檢測出不良品率超過容許範圍，具 有檢査不良之裝置D之分布，例如第2圖（a)所示般多數 探針12A接觸之兩個裝置中，每特定裝置D(在同圖中探 針12A之兩個份裝置中’以陰影線表示之第2號裝置）規 則性產生檢查不良。此時，執行其晶圓W之再檢査，檢 査不良係由於裝置D之不良所導致，或由於探針卡12或 測試機側之通道的不良狀況所導致並不明確。在此，本實 施型態之檢查用程式係以以下之要領實施再檢查。並且， φ 在第2圖（a)中，以虛線所包圍之接觸區域ρ〗表示探針卡 12之多數探針12A最初接觸之兩個份之裝置D所在之區 域。 於執行再檢查時，如第2圖（b)所示般，將探針卡12 和晶圓W最初接觸之位置，從在上一次檢查之最初接觸 區域Pl(參照第2圖（a))朝X方向僅偏移裝置一個份，在 其接觸區域P1'中針對兩個份之裝置D執行電特性檢查。 依此，利用在上一次並無檢査不良之探針1 2A(稱爲「第1 探針12」）檢查上一次之檢査不良之裝置D。因此，在此 -13- 201015651 次檢查中，第1探針12A檢查上一次之檢查不良的裝置D ，並利用第2探針12A檢査上一次之正常裝置D。在此次 檢查中’若利用第1探針12A所檢查出之裝置D不成爲 檢查不良時，其裝置D則以正常無缺陷之裝置被檢查出。 再者，在此次檢査中，以第2探針12A所檢查出之裝置D 即使爲正常之裝置D亦成爲檢查不良。在此次檢查中，若 利用第1探針12A所檢査出之裝置D成爲檢查不良時， 其裝置D則以具有缺陷之不良品被檢査出。 如此一來，在此次之檢查中，以無缺陷之正常第1探 針12A檢查上一次成爲檢査不良之裝置D，可以知道裝置 D本身是否具有缺陷。然後，以正常之第1探針12A檢査 之結果，若不成爲檢査不良，則可以將其裝置D當作良品 予以區分，若成爲檢查不良，則可以將其裝置D當作具有 缺陷之不良品而予以區分。依此，可以將在上一次之檢查 中當作不良品裝置D中之大多數以良品救出，提高製品之 良率。再者，不會白費第2次之檢查，可以有效活用，提 高測試機之運轉效率。 如以上說明般，若藉由本實施型態時，因在控制裝置 14之控制下，使載置晶圓w之載置台11移動，晶圓W 之所有裝置D中，使探針卡12之多數探針12A電性接觸 於兩個裝置D，針對所有裝置D每次執行兩個份的電特性 檢查，並具備：經載置台11，使晶圓W每次移動兩個裝 置份，使晶圓W和探針卡1 2電性接觸而每次執行兩個份 裝置D之電特性檢查的第1工程；於結束所有裝置〇之 -14 - 201015651 檢查之後，在中央運算處理部14C中，檢測出多數探針 12A接觸之裝置D中，每特定裝置是否產生有檢查不良之 第2工程；和於每特定裝置產生檢查不良之時，實施再檢 查之第3工程，第3工程具備：將晶圓W和探針卡12最 初接觸之接觸區域ΡΓ，從在上一次檢查之最初接觸區域 P1偏移一個裝置份之工程；和從此次之最初接觸區域P1· 每次執行兩個份裝置D之電特性檢查之工程，故在初次檢 φ 查’在特定裝置D中規則性產生檢查不良之時，執行第2 次檢查，第2次檢查係可以藉由在第丨次無檢查不良之第 1探針12A，檢査在第1次成爲不良品之裝置〇，可以檢 測出第1次之檢査不良是否在裝置D具有原因，進而降低 裝置D之不良品率而謀求提高良率，並且不會白費第2次 之檢査，可以提高測試機之運轉效率。 並且’在上述實施型態中’雖然針對同時檢査兩個份 裝置D之情形予以說明，但是即使同時檢查3個以上之情 φ 形’亦可以適用本發明。再者’在上述實施型態中，第2 次檢查雖然比起第1次檢查之時，使晶圓W朝檢查方向 • 之下游側僅偏移裝置1個份’但是即使使晶圓W朝上游 側僅偏移1個份亦可。再者，於同時檢查3個以上裝置之 時，在鄰接之兩個裝置連續產生檢查不良之時，可以藉由 使晶圓W偏移兩個份，而執行檢查。 [產業上之利用可行性] 本發明可以適合利用於執行晶圓等之被檢查體之電特 201015651 性檢查之時。 【圖式簡單說明】 第1圖爲表示用以實施本發明之被檢查體之檢查方法 之檢查裝置之一例的構成圖。 ' 第2圖（a)、（b)爲各表示具有藉由使用第1圖所示之 檢查裝置之檢查方法所引起之檢查不良的裝置之分布狀態 的晶圓之俯視圖，（a)表示初次檢査之圖式，（b)爲表示第2 次檢查之圖式。 第3圖爲剖斷以往探針裝置之一例之一部分的前視圖 〇 第4圖爲表示藉由使用第3圖所示之檢查裝置之以往 檢查方法的晶圓和探針卡之探針之關係的俯視圖。 【主要元件符號說明】 10:探針裝置（檢查裝置） ^ 1 1 :載置台 12 :探針卡 1 2A :探針 W :晶圓（被檢查體） D :裝置 -16-201015651 VI. Description of the Invention: [Technical Field] The present invention relates to an inspection method of an inspection object that simultaneously performs electrical property inspection of a plurality of devices, and more particularly, relates to inspection even if a defect occurs due to a specific passage If it is not good, it is also possible to restore the inspection method of the object to be inspected and the program to be inspected. & [Previous Art] As a probe device of the conventional inspection apparatus, as shown in Fig. 3, a loading chamber 1 and a probe chamber 2 which are adjacent to each other are provided. The loading chamber 1 includes a cassette accommodating unit that stores a plurality of wafers W in a cassette unit, a wafer transport mechanism that carries the wafer W one by one from the cassette, and a wafer W that is transported by the wafer transport mechanism. A pre-alignment mechanism that performs pre-alignment of the wafers. The probe chamber 2 includes a holding wafer W, a mounting table 3 that is movable in the X, γ, Z, and Θ directions, and all devices that are in contact with the wafer W placed on the mounting table 3 φ. a probe card 4' of a plurality of probes 4A of electrode pads of a plurality of devices and a fixing mechanism 5' for fixing the probe card 4 by a card holder (not shown) and an electrical connection probe card 4 and a test head The connection ring 6 of τ is configured to pass the test head τ, the connector 6 and the probe card 4 under the control of the control device, so that the tester without the pattern electrically contacts each of the plurality of devices to perform electrical characteristic inspection. Further, in Fig. 3, reference numeral 7 denotes an alignment mechanism that operates in conjunction with the mounting table 3 to perform positioning of the wafer W and the probe card 4, 7A is an upper camera, 7B is a lower camera, and 8 is a probe card mounted thereon. The top plate of the fixing mechanism 5 of 3. -5- 201015651 Further, as shown in Fig. 4, when the probe card 4 of the two-part device in the X direction is simultaneously inspected by one contact, 'as shown by the arrow of Fig. 4, The mounting table 3 is moved to the right in the X direction. After the probe card is electrically contacted with the two devices D at the initial contact position P1 and the inspection is performed, the two devices D are used as the arrows of the fourth figure. The index is indexed in the X direction, and when the contact position P2 ends the device D check of the last two copies of the first line, only one part of the device is indexed toward the Y direction, and in the second line The inspection of the two devices D is performed every time in the X direction left direction opposite to the first row. The device D for each row is repeatedly inspected in the same manner, and electrical characteristics are checked for all devices of the wafer W, and if the device D is defective, the device D is detected. Then, when the inspection of one wafer W is finished, it is exchanged with the next wafer W, and electrical characteristics inspection is performed for the exchanged wafer W in the same procedure. Further, Fig. 4 shows the inspection result on the way to the wafer W, and Fig. 4A shows the probe of the probe card in the middle of the inspection. Further, the thick line in the wafer W indicates the device D to be inspected. However, as a result of the initial inspection, when the defective product rate of the device D exceeds the allowable range, the same inspection is performed again on the wafer W to confirm the defective product rate. When the defective product rate is reduced within the allowable range in the second inspection, the inspection is performed by exchanging with the next wafer W. SUMMARY OF THE INVENTION (Problems to be Solved by the Invention) However, in the initial inspection, as shown by hatching in Fig. 4, the specific device D of each -6 - 201015651 has a regular check failure. At this time, even if the second inspection is performed in the same procedure as the first time, only the same result is obtained, and the number of occurrences of the device D (the device indicated by hatching in FIG. 4) having the inspection failure is not lowered. The yield is lower when the product is defective. Furthermore, the time spent on the re-inspection is excessive, and the operation efficiency of the test machine is lowered. The present invention has been made in order to solve the above problems, and an object thereof is to provide a check failure for each specific device in the initial inspection. In the second inspection, it is possible to confirm whether or not the inspection failure is caused by a malfunction of the device, and it is possible to improve the yield, and it is possible to eliminate the situation in which the second inspection is performed in vain, and the inspection object can improve the operational efficiency of the testing machine. Inspection method and inspection program of the object to be inspected. (Means for Solving the Problem) The inventors of the present invention performed various reviews on the cause of the inspection failure as shown in Fig. 4, and obtained a regular inspection failure in the specific device during the initial inspection. The card or tester side channel has a problematic view. The present invention has been made in view of the above findings, and the inspection method of the inspection object according to the first aspect of the patent application is controlled by the control device to move the mounting table on which the inspection object is placed, and is inspected as described above. In all devices of the body, a plurality of probes of the probe card are electrically contacted to the plurality of devices, and a plurality of electrical property inspections are performed for each of the devices described above, which are characterized by: after finishing the electrical property inspection of all the devices In the device of 201015651, the above-mentioned probe card contacts the position of the above-mentioned probe card at the time of performing the re-inspection in the device of 201015651. At least one device portion is offset from the contact position of the last inspection, and a plurality of inspections of the electrical characteristics of the device are performed each time. Further, the inspection method of the object to be inspected according to item 2 of the patent application scope of the present invention is In the inspection body, the mounting table on which the object to be inspected is placed is moved under the control of the control device, and the probe is used in all the devices of the object to be inspected A plurality of probes are electrically connected to a plurality of devices, and each of the devices performs a plurality of electrical property inspections each time, and is characterized in that the plurality of devices are moved by the mounting table to move the plurality of devices each time. And performing the first project of electrically checking the electrical characteristics of the plurality of devices each time the test object and the probe are electrically contacted; and detecting the device in contact with the plurality of probes after the inspection of all the devices is completed Whether the second item of the inspection failure is generated for each of the specific devices, and the third item of the re-inspection is performed when the inspection failure occurs for each of the specific devices, and the third item includes the object to be inspected and the probe card The position at which the initial contact is made, at least one device offset from the initial contact position at the last inspection; and the execution of the electrical characteristic check of the plurality of devices at a time from the initial contact position of the current one. In addition, the inspection program of the inspection object described in the third aspect of the invention is a inspection program for the inspection object, and by driving the computer to move the placement table on which the inspection object is placed, In all the devices of the above-mentioned object to be inspected, a plurality of probes of the probe card are electrically contacted to the plurality of devices -8 - 201015651, and a plurality of electrical property inspections are performed for each of the above devices, and the feature is: at the end After the electrical characteristics of all the above devices are inspected, in the device in contact with the plurality of probes, when each of the devices is inspected, a re-inspection is performed for all of the devices, and when the re-inspection is performed, the probe card and the above The position at which the object to be inspected contacts is offset by at least one device from the contact position at the last inspection, each time to perform a plurality of inspections of the electrical characteristics of the device. In addition, the inspection program of the test object described in the fourth aspect of the invention is driven by a computer to move the mounting table on which the test object is placed, in all the devices of the test object. A plurality of probes of the probe card are electrically contacted to the plurality of devices, and each of the devices performs a plurality of electrical characteristic inspections each time, wherein the computer is driven to perform the following processes. The first project in which the plurality of device parts are moved each time, and the object to be inspected and the probe card are electrically contacted, and a plurality of copies of the electrical characteristics of the device are inspected each time; After the inspection of all the above devices, it is detected whether or not the second project of the inspection failure occurs in each of the devices in contact with the plurality of probes; and the third project in which the re-inspection is performed when the inspection failure occurs in each of the specific devices In the third project described above, the position at which the test object and the probe card are initially contacted is performed, and at least one device is offset from the initial contact position at the last inspection. The works; and performs a time from the initial contact positions of a plurality of parts project above inspecting the electrical characteristics of the device. [Effect of the Invention] -9- 201015651 According to the present invention, it is possible to provide a check for the occurrence of an inspection failure for each specific device during the initial inspection, and to confirm whether the inspection failure is caused by a malfunction in the second inspection, and further The yield can be improved, and the inspection method of the inspection object and the inspection program of the inspection object can be eliminated by performing the second inspection in a white fee and improving the operation efficiency of the testing machine. [Embodiment] Hereinafter, the present invention will be described based on the embodiments shown in Figs. 1 and 2 . In the drawings, Fig. 1 is a view showing an example of an example of an inspection apparatus for carrying out the inspection method of the test object of the present invention. Figs. 2(a) and 2(b) are diagrams showing the use of the first The plan view of the wafer in the distribution state of the device having poor inspection caused by the inspection method of the inspection apparatus shown in the drawing, (a) is a diagram showing the first inspection, and (b) is a diagram showing the second inspection. First, an inspection apparatus (probe device) for carrying out the inspection method of the test object of the present embodiment will be described. As shown in Fig. 1, the probe device 10 of the present embodiment includes a mounting table 11 movable in the yaw, γ, ζ, and θ directions in the probe chamber, and a probe disposed above the mounting table 11. The card 12, and the alignment mechanism 13 for performing the positioning of the wafer W and the probe card 12 on the mounting stage are constructed under the control of the control device 14, and the mounting table 11 and the alignment mechanism 13 cooperate to execute the wafer. After positioning of a plurality of electrode pads of the device of W and a plurality of probes 12 of the probe card 12, the stage 11 feeds the wafer W index and performs electrical characteristic inspection of each device of the wafer W. -10-201015651 The stage 11 has a drive mechanism 1 1 A constituted by an X-direction drive mechanism, a Y-direction drive mechanism, and a z-direction drive mechanism as shown in Fig. 1 . Therefore, the mounting table 11 is controlled by the control device 14 to move to the X, Y, Z, and x direction via the drive mechanism 11A. The probe card 12 has a plurality of probe cards 12A as shown in Fig. 1, and is fixed to the top plate 16 via the card holder 15. Most of the probes 12A are formed in a plurality of devices D (see Fig. 2) formed on the wafer W, and are at least $ in contact with the two devices D. The device D in which the plurality of probes 12A are in contact with each other differs depending on the type of the device D, and may be arranged in a matrix in a plurality of vertical axes, or at least two in the lateral direction or the longitudinal direction. In the present embodiment, the plurality of probes 12A are configured to be in contact with the device D arranged in the lateral direction as shown in Figs. 2(a) and 2(b). As shown in Fig. 1, the alignment mechanism 13 includes a first camera 13A that moves between the mounting table 11 and the probe card 12, and a second camera 13B that is attached to the side of the mounting table 11, and is fixed. The φ of the first camera 13A is aligned with the bridge 13C. The first camera 13A moves between the deep portion of the probe chamber and the center of the probe (an extension line on the center of the probe card) via the alignment bridge 13C, and mounts the stage 11 moving in the X and Y directions at the center of the probe. Wafer on the W. The second camera 13 is moved directly below the probe 12 of the probe card 12 via the mounting table 11, and the probe 12 is photographed at this position. The control device 14 is mainly composed of a computer having a memory unit 14 that stores the inspection program or other program of the present invention and various types of inspection data, and is based on photography from the first and second cameras 13 and 13 The image processing unit 14C that performs the image processing and the image processing unit 14C receives and transmits various kinds of data between the storage unit -11 - 201015651 14A and the image processing unit 14B to perform arithmetic processing. The central processing unit 14C reads the inspection program or the like from the memory unit 14A, controls the components such as the mounting table 11 and the alignment unit 13, or performs various data processing on the data or image data indicating the result of the inspection. Next, a description will be given of an inspection method using one of the inspection programs of the test object of the present invention. When the computer of the control device 14 is driven by the inspection program of the present embodiment, the central processing unit 14C reads the inspection program from the storage unit 14A, and executes the inspection method of the present embodiment. When the inspection method of the present embodiment is carried out, the stage 11 that receives the wafer W from the loading chamber moves in the X and Y directions via the driving mechanism 11A, and rotates in the Θ direction at a specific angle range to cut the wafer W. Align the X and Y directions. In parallel with this, the second camera 13B of the alignment mechanism 13 measures the needle position of the probe 12A, and the first camera 13 A measures the electrode pad of the wafer W corresponding to the probe 1 2 A, thereby performing After alignment of the wafer W and the probe card 12, inspection of the wafer W is performed. After the alignment, the mounting table 1 moves the device D to be inspected directly below the probe card 12, and the wafer w is raised from this position, so that the first two portions of the device D of the plurality of electrode pads correspond to Most of the probes 12A are in contact with each other and are overdriven, so that most of the electrode pads are in electrical contact with the majority of the probes 12A, and the electrical characteristics of the device D are performed in two parts. Then, as in the prior art, when the stage 11 feeds the wafers W to the right index in the X direction, and at the same time, when the apparatus alternates, the apparatus is introduced to the lower side of the γ direction from the -12-201015651. One copy, as shown in Fig. 2(a), is performed while switching the index in the direction of the direction and performing the two-part electrical characteristic check to the last device d. After the inspection of all the devices for the wafer W is completed, if the inspection failure rate of the device is within the allowable range, the next wafer W is exchanged, and the wafer W after the exchange is performed in the same manner. As a result of the inspection by all the devices D of the circle W, 0 the central processing unit 14C detects that the defective product rate exceeds the allowable range, and has a distribution of the device D having a poor inspection, for example, the probe 12A as shown in Fig. 2(a) Of the two devices in contact, each of the specific devices D (the second device indicated by hatching in the two portions of the probe 12A in the same figure) regularly produces an inspection failure. At this time, the re-inspection of the wafer W is performed, and it is unclear whether the defect is caused by the defect of the device D or the defect of the channel on the probe card 12 or the tester side. Here, the inspection program of this embodiment is re-inspected in the following manner. Further, in Fig. 2(a), the contact area ρ surrounded by a broken line indicates the area where the device D to which the majority of the probes 12A of the probe card 12 are initially contacted is located. When the re-inspection is performed, as shown in Fig. 2(b), the position where the probe card 12 and the wafer W are initially contacted is from the first contact region P1 of the previous inspection (see Fig. 2(a)). Only one copy of the device is shifted in the X direction, and electrical characteristic inspection is performed for the two devices D in the contact region P1'. Accordingly, the device D having the last inspection failure is checked using the probe 1 2A (referred to as "the first probe 12") which has not been inspected for the last time. Therefore, in this -13-201015651 inspection, the first probe 12A checks the device D for which the previous inspection was poor, and checks the previous normal device D with the second probe 12A. In this inspection, if the device D detected by the first probe 12A does not become an inspection failure, the device D is inspected as a normal defect-free device. Further, in this inspection, the device D detected by the second probe 12A is inspected even if it is a normal device D. In this inspection, when the device D detected by the first probe 12A is inspected, the device D is inspected for defective products having defects. As a result, in this inspection, the device D which is the last inspection failure is inspected by the normal first probe 12A without defects, and it is possible to know whether or not the device D itself has a defect. Then, as a result of the inspection by the normal first probe 12A, if the inspection is not performed, the device D can be distinguished as a good product, and if the inspection is poor, the device D can be regarded as a defective product having defects. And distinguish it. Accordingly, most of the defective device D can be rescued as a good product in the last inspection, and the yield of the product can be improved. Furthermore, the second inspection will not be in vain, and it can be effectively utilized to improve the operational efficiency of the testing machine. As described above, in the present embodiment, the mounting table 11 on which the wafer w is placed is moved by the control device 14, and the majority of the probe cards 12 are provided in all the devices D of the wafer W. The probe 12A is electrically connected to the two devices D, and performs two electrical characteristic inspections for each device D at a time, and has: through the mounting table 11, the wafer W is moved two devices at a time to make the wafer W and the probe card 1 2 are electrically contacted each time to perform the first process of checking the electrical characteristics of the two parts of the device D; after the end of all the devices - 14 - 201015651 check, the central processing unit 14C detects In the device D in which the majority of the probes 12A are in contact with each other, whether or not the second project of the inspection failure is generated for each of the specific devices; and when the inspection failure occurs for each of the specific devices, the third project of the re-inspection is performed, and the third project includes: The circle W and the contact area 最初 initially contacted by the probe card 12 are offset from the initial contact area P1 of the last inspection by one device; and from the initial contact area P1 of this time, two parts of the device D are executed each time. Electrical property inspection, so the initial inspection φ 查 查 查 查 查 查 查 查 查 查 查 查 查 查 查 查 查 查 查 查 查 查 查 查 查 查 查 查 查 查 查 查 查 查 查 查 查 查 查 查 查 查 查 查 查 查In the device of the defective product, it is possible to detect whether the first inspection failure has a cause in the device D, thereby reducing the defective product rate of the device D, and improving the yield, and the second inspection is not in vain, and the testing machine can be improved. Operational efficiency. Further, in the above-described embodiment, the case where the two parts D are simultaneously inspected is described, but the present invention can be applied even if three or more φ shapes are simultaneously inspected. In the above-described embodiment, the second inspection causes the wafer W to shift only one copy of the device toward the downstream side of the inspection direction when the first inspection is performed, but even if the wafer W is directed It is also possible to shift the upstream side by only one copy. Further, when three or more devices are simultaneously inspected, when the adjacent two devices continuously cause inspection failure, the inspection can be performed by shifting the wafer W by two. [Industrial Applicability] The present invention can be suitably used in the case of performing an electrical inspection of a test object such as a wafer. [Brief Description of the Drawings] Fig. 1 is a configuration diagram showing an example of an inspection apparatus for carrying out the inspection method of the test object of the present invention. 'Fig. 2 (a) and (b) are plan views of wafers each showing a distribution state of a device having an inspection failure caused by the inspection method using the inspection apparatus shown in Fig. 1, and (a) shows the first time. The pattern of inspection, (b) is the diagram showing the second inspection. Fig. 3 is a front view showing a part of an example of a conventional probe device, and Fig. 4 is a view showing a relationship between a wafer and a probe of a probe card by using the conventional inspection method of the inspection device shown in Fig. 3. Top view. [Description of main component symbols] 10: Probe device (inspection device) ^ 1 1 : Mounting table 12: Probe card 1 2A: Probe W: Wafer (inspected body) D: Device -16-