TW201013811A - Substrate cleaning device - Google Patents

Abstract

The present invention provides a substrate cleaning device, which can suppress the generation of mist resulting from a cleaning liquid spattering outward during a cleaning process to prevent the cleaning liquid from reattaching to the substrate. A substrate cleaning device comprises: a spin chuck 20 horizontally holding a semiconductor wafer W; a cleaning member 30 which can rotate around a vertical axis; a servo motor 39 rotating the cleaning member around the vertical axis; and a movement mechanism 63 moving the cleaning member along the cleaned face of the wafer. The substrate cleaning device is characterized by: a base section 32 joining a sponge-like cleaning base portion 31 to form the cleaning member; a pouring port 33 connected to a cleaning liquid supply source being disposed in the central part of the base section and the cleaning base portion; a plurality of communicating grooves 35 being disposed on a surface of the cleaning base section, the base ends of the communicating grooves being connected to the cleaning liquid discharge port, and the front ends of the communicating grooves extending to the front of the peripheral portion of the cleaning member; and a drain hole 36 communicating with the communicating grooves being disposed at the positions of the communicating grooves in the base section.

Description

[Technical Field] The present invention relates to a substrate cleaning apparatus that cleans and removes particles attached to a substrate surface such as a semiconductor wafer or a (planar display) substrate. [Prior Art]

Second, when the body element is used to form a money pattern on, for example, a semiconductor wafer or FPD = (hereinafter referred to as a circle), a photolithography technique can be applied. Hunting the photolithography technology, coating the photoresist solution on the wafer by spin coating, etc., corresponding to the exposure of the photoresist film formed by the ft ft 此 再 再 再 再 ' ' 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光A circuit pattern is formed on the resist film. Further, in the process of manufacturing a semiconductor device, the wafer or the like is extremely clean. Therefore, before and after each processing step, cleaning means for cleaning and removing particles adhering to the crystal or the like can be provided in accordance with the required setting. Since the past, the substrate cleaning device used by us has: rotating the chuck, holding the wafer horizontally and rotating around the wrong axis; the cup body surrounding the outer side of the rotating chuck; the cleaning member rotating around the wrong axis; The mechanism rotates the cleaning member; and the ® moving mechanism moves the cleaning member along the surface to be cleaned of the wafer. In such a substrate cleaning apparatus, as a cleaning member, a structure is known in which a sponge made of, for example, PVA (polyvinyl alcohol) is used, and a cleaning groove is formed on the cleaning surface of the sponge from the center toward the side. The central portion of each of the groove-shaped recesses communicates with the cleaning liquid ejection port (see, for example, Patent Document). Thus, the cleaning unit can be always attached to the cleaning member by the center portion of each of the groove-like recesses; [Patent Document 1] Japanese Patent No. 30594641 (Paragraph 27, Fig. 5, Fig. 6) [Description of the Invention] 201013811 (Problem to be Solved by the Invention) 'L Patent Document 1 In the technology, the purpose is to set the groove on the surface of the cleaning member (4), and the cleaning liquid discharged from the groove-like recess in the cleaning process will touch the green toward the outside, _ subtraction - part The liquid is flying down to generate mist, which causes the problem that the wire reattaches to the surface. The purpose of the present invention is to provide a substrate cleaning device, the first step of utr processing _ the external fly to read the washing material to cause Wei, To achieve prevention The cleaning liquid is further adhered to the substrate. In order to solve the above problems, the substrate cleaning apparatus of the present invention comprises: a holding mechanism, a horizontal domain processed substrate, and a cleaning member around the vertical axis, which can be wound around a vertical shaft rotates; a rotating mechanism rotates the cleaning member; and a structure that moves the cleaning member along the surface to be cleaned of the substrate to be processed. The substrate cleaning device is characterized by: 'washing liquid spouting unit, the cleaning age towel, silk The cleaning base of the joint _ is formed into the cleaning portion, and the cleaning portion is provided with a cleaning liquid supply source, and a plurality of communication grooves are provided in the cleaning base portion, and the base end is connected thereto, and Before the front end extends to the outer peripheral portion of the cleaning member, the portion where the communication groove is located in the portion of the first nozzle hole is provided with the discharge communicating with the communication groove, and the h-shaped setting of the clearing portion is set. Wei private σ, Qian Cai 妓 spit: ^ By this configuration 'in the state of the cleaned surface of the substrate to be treated and the cleaning structure, close to the state, can be shaped by the self-winding straight to clear 2, first 2J lotion Cleaning of the spit The liquid 2 is replaced by a liquid, and the monthly washing treatment can be carried out from the connecting groove and the discharge hole toward the cleaning back _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Further, the cleaning liquid is not discharged by the washing liquid from the age of the cleaning agent, and is discharged toward the back side of the monthly washing, so that the rotation speed of the cleaning member can be set at a high speed. At this time, the center portion of the cleaning base is provided with a buffering communication hole, and the shape has a large diameter. The cleaning of the earth seat (4) is performed by π, and the washing liquid spouting port and the connecting groove ί, the cleaning of the spout (supply) from the fish ίίϋ ϊ The liquid flows equally and smoothly in each of the communication grooves (request 2). In the present invention, the communication groove and the discharge hole preferably have a tilting slope in at least the communication groove. Ο The direction of rotation of the cleaning member is self-cleaning surface _ cleaning the back side lazy (please borrow, reduce) The granules are washed by the cleaning member and the cleaning liquid used for cleaning. In the invention: one or a plurality of guides may be provided on the concentric circles of the cleaning surface of the cleaning base. The groove is connected to the adjacent communication groove (request item 4). The groove can be guided to the communication groove and the discharge hole to actively guide the particles removed by the π-washing member and the cleaning liquid for cleaning and discharge the same. Further, the following may be further included to constitute the base cleaning device: a drain pipe that communicates with the discharge holes; and a suction mechanism that is disposed in the drain pipe (request item 5). The high-efficiency refurbishment of the particles and the monthly washing liquid removed by the soaking and washing. The Langke can actively discharge it by the suction mechanism, so it is feasible to adjust the rotational speed of the monthly washing member and adjust the supply of the cleaning liquid. Effect according to the present invention, as it is constructed as described above (1) According to the invention of claim 1, the particles removed by the cleaning member can be discharged from the communication groove and the discharge hole toward the side of the washing surface, and the cleaning treatment can be suppressed by the cleaning 2 The cleaning liquid that has been scattered by the outside causes the mist to be washed and then attached to the substrate, and the particles removed by the cleaning member and the cleaning liquid for the cleaning liquid are not washed out from the outer peripheral side (peripheral side) of the cleaning member. The back side is discharged, whereby the rotation speed of the cleaning member can be set at a high speed, so that the cleaning efficiency can be improved. 201013811 =: The core 2 buffering communication hole is formed in the channel, and the cleaning liquid is uniformly and smoothly (7) It is supplied directly to Jieshe Cleaning Fluid (Requirement 2). The above (1) can be cleaned and cleared, so that in addition to the invention of the unloading, the groove can be guided by the cleaning member and discharged, so that the cleaning liquid of the danger, f rT/first, actively faces the communication groove and the discharge hole. Guide H), (2) can improve the cleaning scale. Connect the suction machine ΐ, pass the sputum of the sputum, clean the _^ record and use for the line, the main Weiit substrate. ^' By actively discharging by the suction mechanism, it is possible to advance one line ^= key pepper Na 4, (4) the best shape [Embodiment] Sound report 5 5 = figure The best embodiment of the present invention will be described in detail. In the above description, the substrate cleaning device is disposed near the exit of the photoresist coating of the semiconductor wafer, and the substrate cleaning device first cleans the BaiU surface on which the photoresist film is formed and then exposes the film to the subsequent exposure. circle. Yu Tai map resist coating • (iv) 俯视 processing system schematic top view, ® 2 series photoresist Ϊ ^ ^ ^ processing system schematic view, Figure 3 is a schematic longitudinal section of the photoresist coating and development processing system. The abutment coating and development processing system is provided with a carrier block S1, and the transfer arm C can take out the wafer w from the sealed carrier 100 on the HUS $ ̄ mounting stage 1〇1 to process the crystal block S2, and The transfer arm c can receive the processing day S2 from the processing block S2 to return the wafer to the carrier 1〇〇〇201013811. The substrate cleaning device 1 (hereinafter referred to as the cleaning device 1) according to the present invention is in the self-processing region. When the block S2 transfers the wafer w to the exposure device S4, that is, as shown in FIG. 1, the inlet portion of the interface block S3 can be cleaned as the back surface of the wafer w to be processed. In the processing block S2, as shown in FIG. 2, in this example, the first block (DEV layer) B1 can be stacked in order to perform development processing; the second block (BCT layer) B2 is used. a forming process for forming an anti-reflection film formed on the lower layer side of the photoresist film; a 3-block (c〇T layer) B3 for coating the photoresist film; and an «4th block (TCT layer) B4 And used to form an anti-reverse film formed on the upper layer side of the photoresist film. Μΐίί, block (BCT layer) B2 and 4th block (like layer) B4 are respectively formed on the following eve. The unit 'applies by spin coating to form a liquid medicine for forming an anti-reflection film; a processing unit group for performing processing and post-processing before processing by the coating unit; and A2, M' being disposed between the service unit and the processing unit group, and transferring the wafer between the # W. The structure is in the third block (C〇T layer) B3' is the same as the processing liquid photoresist. 'About the first block (DEV layer) Bi is shown in Figure 3, at -S Two stages of developing units 11 are stacked in B1. Further, in the DEV layer B, the wafer W is transported to the two segments of the display, that is,

The transfer arm A1 has been common to the two-stage developing unit. And in the processing block S2, as shown in FIG. 3 and FIG. 3, the first unit of the pedestal unit can be arbitrarily moved up and down, and the unit is transferred to the one of the pedestal unit U5, for example, the second area is sequentially arranged. KPL2 transports the wafer wj ^ from the carrier block S1, the transfer arm A2 in the (BCT layer) m, and the transfer unit CPL2 from here; the wafer is transported by each i2, 201013811, and thereafter In the vicinity of the pedestal unit U5 ^ ,, the arbitrarily ascending and descending 3rd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd And it can be directed to the transport arm A3 - the seat of the ghost (coffee layer) B3 to form the photoresist W. Further, the transfer unit fat transfer wafer B4 formed with the photoresist film/the door is formed to form an anti-reflection film. At this time, the fourth block (TCT layer > handing wafer w, in the form of 1+j) is transferred from the early 70 CPL4 to the transport arm A4. Thereafter, the transport arm E4 is shuttled to the transfer unit TRS4 via the transport arm A4, and the transfer single transfer unit CPU1 of the unit U6 from which the material transport mechanism is cut is received by the transfer unit and the TRS4. The wafer is transferred to the U^CPU1 via the transfer arm D1 by the circle w, and the wafer is transferred to form a crystal with an anti-reflection film. Since then, the shuttle arm E is straightened and set in the year seat. Single transfer f transfer single 70 CPL12. Here, as shown in Figure 1 between the hand arm D2 washing device 1, the transmission mechanism of a transport mechanism is separately raised and lowered, and includes, for example, 2 arms for special washing _ connection ^ 3 ,: day and day _ day _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The range is 35, respectively, by the transfer arm C to make the wafer carrier. In addition, the ® 1 hunger ~ U4 knife is stacked with the heating part and the cooling part of the heat U4. Next, please refer to FIG. 4 to FIG. this 201013811 <First Embodiment> FIG. 4 is an enlarged perspective view of a portion of the cleaning device 1 and a partial view of the device (a) A(a). The structure of the vertical section bottom cup 1 of the cleaning device 1 is such that the following is mounted on the box-shaped developing two-substrate holding mechanism of the upper surface σ, and the photoresist is coated substantially horizontally; ', '" The wafer w received by the second transfer arm D2 is adsorbed Ο Φ is received as the second substrate holding mechanism 'plays the role of the wafer from the absorption of the wafer. The cleaning member 30 cleans the back surface of the wafer W. As shown by f4, there are two in the cleaning device 1, and each of the adsorption trays = no solid periphery portion _ "the first == 1 η eight cr 丨 - strong E, with And the function of the plate. As shown in Figure 4, the 'end of each 墼 〇 〇 女装 女装 女装 女装 于 于 于 于 细长 细长 中央 中央 中央 中央 中央 中央 中央 中央 中央 中央 中央 中央 中央 中央 中央 中央 中央 中央 中央 中央 中央 中央 中央The derrick 14 of the portion 12 and the horizontal portion 13 is also formed, and the strip P 13 is formed so that the entire belt is fixed to the two timing belts 15 at the bottom of the second portion. The belt 15 activates the horizontal bar portion 13 to move the well block 14 as a mouth or by the way. The circumference 5 is not in the X direction and as shown in Fig. 4, by the lifting portions 18a and 18b 2 18 , 11 201013811 in the clear wire The arrangement of the 丨 丨 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 (10) and a donut-shaped top cup is disposed on the kerb 14 . The upper surface of the top cup 41 is provided with a larger diameter than the washing liquid = the opening π portion 42 is at the conveying mechanism and _# == ' The top cup 41 spanned over the well block U is as shown in Fig. 6 'J, w. Also' moves in the X direction and the Z direction. The action is accompanied by the action of the well block 14 ❹ the chuck 20 is supported by the bottom plate of the wafer w from the bottom. The rotating plate 2 is set to be substantially flat, (in the middle of the ησ, respectively, by the substrate holding mechanism (adsorption disk 10: rotating chuck = two wafer W on the back side of the area and the second area H disk 〇) / kg = The drive plate is connected to the drive mechanism via the shaft portion 21 as shown in Fig. 6. The tray 20 is rotated by the chuck motor 22 to 22' secret folder ^ 20 with the hole 1 and attached to hold the wafer W at the same time. stand by

The upper end of the Q member is formed with a gas 3 in the circumferential direction. 】 The chasing knife 25 is in the cylinder (5 is the structure If, when cleaning, the rotating chuck 2 is rotated) ^ ^ color transfer wafer to the rotating chuck 2G W Γ Zone 2 The surface of the vessel τ 4 and the backing blade 25 of the substrate supported by the rotating chuck 2G; the air field is supplied from the hollow portion between the cylinders to the 嗔12 201013811 The cleaning member 3A for cleaning the back surface of the wafer w will be described with reference to Figs. 7 to 12 . The cleaning member 30 is formed by: a disc-shaped cleaning base 31 formed of, for example, a sponge made of pVA (polyvinyl alcohol); and a disc-shaped base portion 32 made of, for example, plastic, joined to the lower surface of the cleaning base 31; A cleaning liquid discharge port 33 (hereinafter referred to as a discharge port 33) is provided at a central portion of the base portion 32 and the cleaning base portion 31, and a cleaning liquid supply source 5A is connected. At this time, the diameter of the ejection opening forming the cleaning base portion 31 is larger than the ejection opening 33 of the base portion 32. Further, a peripheral portion 35 (four 10 e ^ is shown in the drawing) is provided on the outer periphery of the cleaning base 31, and the base end thereof is connected to the ship 34, and the front end thereof extends to the outer peripheral portion of the cleaning member 30. . A plurality of (four) long holes are provided in the portion where the seat portion and the 32-inch communication groove 35 are located, and the discharge holes 36' are respectively connected to the communication grooves 35. Further, the base portion % communicates with the discharge port 33, and is supplied to the source 5G via the cleaning liquid supply port. Further, a male screw member is provided outside the mounting portion 37, and the passage 3 is connected to the mounting portion 37 via the clutch 37b. The servo motor 39, which is coupled to the lower end of the shaft 38 and coupled to the rotating mechanism, is rotatable about the vertical axis by the drive servo motor 39. The member 30 and the cleaning member 30 are attached to the support structure #6() >& the end of the cleaning member, and the support member 60 is bent into a crank (four) shape. When the base end W or the horizontal strip of the supporting member (9) is set to the view m set by the self-rotating chuck 2G in Fig. 4, the positive/deletion is set. It is mounted on the 2nd round ==^30 along the belt 61 and installed in the above __ phase.雑62, the towel H wheel 62A is driven by the timing belt 6i or the supporting member (4) Fig. 4, and the member 30 can be moved. The Y direction is arbitrarily moved, and the cleaning liquid supply pipe 51 is provided with an opening/closing port 52 and a flow rate adjusting valve 53 from the side of the cleaning liquid supply member 30: two =, the connection to the cleaning motor 39 is not shown Show control texture and servo control signal clearing the flow and cleaning components% ^ ^ ^ County self-controller 13 201013811 The following table: into, the cleaning component 30 at the upper end of the cleaning surface close to the wafer w spray also The oral motor 39 is laid around the straight axis, and at the same time, the particles on the lower surface of the wafer w can be removed from the λ. At this time, if it is connected and covered with a film towel, the cleaning liquid for cleaning can be referred to as 经由 by the I and the pure 36. Therefore, it is possible to suppress the fogging of the top cup 41 which is used for the *washing liquid wash. The middle portion may be a structure, and the inclined surface 35a' of the Weigou 35 and the discharge hole % Llfi is inclined from the back side of the second f in the rotation direction of the cleaning member 3g. Specifically, as shown in FIG. 4(4), an inclined surface may be provided in the communication groove 35 and the discharge hole 36, and inclined along the 3 side toward the cleaning back side, or may be connected as shown in FIG. 10(b). The inclined forest * is disposed at least in the communication groove 上述% and the discharge hole 36 at least in the communication groove 35. The rotation of the cleaning member 3G is rapid. Cong lotion with 5 Although two guide grooves 35e are provided in the drawing, but also; f: or == ==== 14 201013811 Two exhaust pipes 44' are exhausted to exhaust the airflow in the washing device 1. In order to prevent the cleaning liquid accumulated in the bottom of the bottom cup 40 from flowing into the exhaust pipe 44, the bottom surface of the exhaust pipe=bottom cup 40 extends upward, and is surrounded by the air knife 25, and is covered by the inner cup 45. The rinsing liquid is not directly inserted into the opening portion 42 of the liter cup 41, and is provided with a blowing nozzle 46 for blowing compressed air from above near the outer periphery of the wafer w after the cleaning is completed. Dry the cleaning solution. The air blowing nozzle 46 includes an elevation (not shown), and is retracted upward when masking the wafer W, and does not interfere with the wafer W Φ during transport. A cleaning liquid nozzle 47 is provided on the inner side of the top cup 41, and the member 3 is supplied with the cleaning liquid to supply the cleaning liquid to the back surface of the wafer w. A light box 49 is attached to the side wall of the bottom cup 4 of the right timing belts 15, 61, and the wafer w to be processed can be fed into the cleaning and cleaning device from the left-hand direction, at which time the crystal® passes above. The wafer to be sent out after the completion of the cleaning is irradiated with ultraviolet rays on the back side to retain the role of the shrinkage of the particles on the back side of the Japanese yen W. 7〇, the controller of the Bumm device purchase control unit 44, = 1 each moving mechanism 19, 63 or the heart lamp 48, and the whole part of the exhaust type-type storage unit. The controller 70 includes, for example, an unillustrated process in which the electric storage type is housed in the storage unit, and the wafer w including the wafer is transferred from the outside to the transport device. 1 Thunder 1 ί 亥 · 电脑 电脑 电脑 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器Stored in the program storage unit. Washing the wafer 14 to FIG. 18 and simultaneously explaining the cleaning related to the clearing surface, the side of the cleaning, and the cleaning of the wafer W (four) slightly longitudinally. Figure 16_ shows the cleaning structure WT* 1〇 or Rotation 15 201013811 A schematic top view of the area where the wafer w is cleaned in each state held by the missing disk. ί嘴7等=Line diagram marriage material sample stagnation gas as shown in Fig. 14 (a), for example, the horseshoe shape transport mechanism (2nd 〇 2), the object wafer W is sent into the cleaning device i The support pin 24 is lifted from the opening of the top cup ^ and the support pin 24 is raised from the lower side of the rotating chuck 20 and is attached to the lower side of the conveying mechanism _ 24 to the second branch. At this time, the adsorption disk 10 stands by at the position of the upper surface of the holding wafer, and the rotating central disk 20 is retracted to a position lower than = iif. Once the track position is closed, once the contact 24 is lowered, Ba0 W is first transferred to the adsorption 墼1〇 (Fig. 14 aj after the adsorption disk 1G sucks the wafer w, 111 holds the wafer| and directly to the right «w η ?〇 T?" ^ 2 〇 table = ' / = = = stagnation, the cleaning member 30 that is burned in and attached to the 呛 surface of the rotating chuck member 30 is rotated ' and is cleaned, for example, as shown in Fig. 18 (a), Cleaning structure 2: and ... first old face. Specifically switch the cleaning direction of the cleaning member 3 来回 two to two back and forth, clear the distance of 2 pieces 30 diameter. Thereby, the cleaning member is used in the cleaning of the clear - silk particles and The lower bottom cup 4G flows out. Therefore, the cleaning of the particles removed by the %^ communication groove 35 and the discharge hole 36 toward the member 30 can be suppressed by the cleaning gas. The other is to clean the member 3. Fly == 201013811, the cleaning solution - Qicheng Cup 4 〇 was washed away. And from the air knife 25, the servant σ 26 toward the crystal > W / surface squirting gas 'to the air knife 2S outside the money to clear The back surface of the wafer W with the empty = 25 can be kept dry (refer to Figure 17). ^ By, for example, it can prevent the cleaning liquid on the back side of the coated wafer w from being emptied. 25 _ Hit knife may be - a linear surface of the spin chuck 20 is maintained in a dry state, preventing the processing leads to the formation of a cleaning liquid or water contamination 77 collapse.

The cleaning of the dead zone T1 is completed, that is, in the moving suction 1G, the part is located above the rotating chuck 20 (Fig. J Lu = the rotating chuck 2〇 transfers the wafer w. By, for example, the air knife 25m〇 cleaning member 3G, the supply of the cleaning liquid is stopped, and the cleaning is performed by the suction system. On the other hand, the retracted rotating chuck 20 is raised to raise the back of the wafer W, and the person removes the suction tray 10 downward, and can transmit The wafer W is transferred to the rotating chuck 2 of the wafer W to clean the member 3 with the suction cup, and the cleaning member 3 is placed close to the wafer w, and then the cleaning member 3 is rotated. In order to restart the i-to figure /iiH ° at this time, the back surface is cleaned by rotating the rotating chuck 20 and moving the ifii. Specifically, for example, as shown in Fig. 18 (7), the first is w3 pre-forms the day piece 30 to the cleanable wafer The position of the outermost circumference of W is further slowly rotated, and the cleaning member 30 is moved to the same operation as the straight cleaning of the inner circumferential surface cleaning member 30 due to the washing of the annular region. By doing this, the scale can be moved to the back of the wafer w when it is concentric, and the same figure can be cleaned without fail. The area T2 where the upper right oblique line is filled. Here, the area where the area T1 and the area T2 are added together is as shown in Fig. 18(8), and the overall 'adjusted size or moving range of the new preparation, and the ineffective area is not produced. The spin disk 2G holds the wafer w and performs the cleaning, and not only supplies the cleaning liquid from the cleaning member 30, but also supplies the cleaning liquid from the cleaning nozzle 47 provided in Fig. 15 ir 4 = ir5 Zuo Cai. The self cleaning nozzle 7 is also supplied. The reason for the h lotion is to make the surface of the wafer w mixed with the wet area and the dry area, so that when the cleaning liquid is dried, it will cause the water to collapse, so that the cleaning liquid arrives without fail. In this way, the occurrence of water collapse is suppressed. When the cleaning of the entire back surface of the wafer w is completed, the rotation or movement of the cleaning member 3, the supply of the cleaning liquid, the rotation of the rotating chuck 2, and the transfer of the cleaning liquid are stopped. De-drying operation: 甩 de-drying can be performed by rotating the rotating chuck 2 at a high speed to remove the cleaning liquid on the back surface of the wafer W. The wafer W is completely wetted by a gas as described above. Take off to dry it, Suppresses the occurrence of water collapse. This side blows (4) the mouth 46 is lowered, _ moving support member 60, ΐΐ ί 吹 吹 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 This promotes the drying of the crucible. In addition, although the second region to be held is not capable of de-drying, the knife 25 is mechanically miscellaneously rotated 2 (), and almost no drying occurs. w the whole side of the cleaning and dry day ^ point ancient nuD, and vice versa, the action is delivered to the transport mechanism and sent out the wafer W. The round light 48 is in the shape of a horseshoe from the bottom of the transport mechanism toward the crystal by the ultraviolet light to make the 10,000- In the case, it is also possible to use a small defocusing or the like to transfer Y, so that the silk of such a surface can be contracted, and the shrinking H 20 is fed as shown in Fig. 14 to Fig. 18. Further, the wafer W is sequentially washed by repeating the <4 vowel/action'. <Second embodiment> In the second embodiment of the cleaning device according to the present invention, the fine particles removed by the cleaning member 3A and the respective discharge holes 36 are connected to the Y fish. As shown in Fig. 19, the suction pump 80 is provided in the mechanism of the cleaning member 30, and the drainage pipe 81 is connected. The discharge pipe 81 is connected to the cleaning liquid of the cleaning liquid and is removed by the cleaning member 3〇. The particles and the month v. At this time, the 'suction pump 8 〇 and the rotation of the cleaning member 30 18 201013811 mechanism, that is, the servo motor 39 and the controller 7 〇 ' disposed in the cleaning liquid supply tube 51 system In the second embodiment, the same reference numerals will be given to the same portions, and the description will be omitted. The second embodiment is configured as described above. Cleaning device], the high row g is cleaned by the cleaning wire and the cleaning liquid washed by Lin. And because the speed and adjustment of the pumping spring can be adjusted <other embodiments> In the coating and development processing system, the setting of 1 is set at the entrance of the interface block S3. Set cleaning S3^ 1 ^ to clear = film formation before the wafer w = 2; ^ = =: cloth • The device of the cleaning device 1 of the present embodiment is not limited to the photoresist coating system, the cleaning device 1 can also be applied to, for example, ion-implanted turtle Lit fire her reduction device. The particles are on the back of the crystal w and directly enter the crystal between the grain and the wire to form electricity. It can improve the output of the product. This is because the lamp is used for the ϊ guide cloth, although it is still suitable for the substrate to be processed, = display: for the base plate (example). <Evaluation conditions> η贝甲械201013811 •Sample·Comparative example {Cleaning member having a cleaning liquid ejection port at the center portion} Example {Cleaning member 30 according to the first embodiment}

• Abutment pressure: 0.8N • Cleaning member rotation speed: 500 rpm • Cleaning member rinsing: O.OL/min. • Bath (DIB) DIW Flow rate: 〇.2L/min. • Sample substrate: attached to PSL (Polystyrene Latex) Wafer (hydrophilic: 0.309μιη approximately 15,000 attached)

• Measuring machine: SP1 (#1 2F) = SurfscanSplTBl (BZ-0200, ΒΖ-0104) {10^^^11(:〇1:1^. Product name} • Inspection conditions: Check the particle size Ο.ΙΟμτη, 16.16μιη, 0.20μιη, Ι.Ομιη • Inspection area: (p65-296mm • Test machine: brush cleaning module. <Evaluation method> First, the cleaning members of the comparative example and the example are sufficiently filled in the cleaning bath tank After immersing in water, the position of the cleaning member is zero and the amount of pressing of the cleaning member is zero, so that the pressing force is 2.5 mm, and the wafer is measured by the measuring machine (SP1). The sample is cleaned in the bath cleaning mechanism for the predetermined time to process the sample of the shell, and the number of particles after the treatment is measured by the measuring machine (spl). 实施 The silk is applied, and the result of the field 1 is obtained by the side of the (10) side. The results shown in Table 2. [Table 1] Particle size (μιη) Before cleaning ------ Washing removal rate (%) 20.0 ------ _ 23.9 24.7 Ο.ΙΟμτη 11616 9295 ~ 〇·16μιη 11572 88Π ~~ 〇.20μιη 11564 ~Β709 Ι.Ομηι 8 --- 21 -162.5 [Table 2] 20 2010 13811

According to the above evaluation experiment - 1-- comparative example] 'If the cleaning device according to the present invention is used, the removal rate of the particles is greatly increased. The embodiment of the α-washing member of the center can be used. Brief Description: The shadow of the shadow-shaping coating. The schematic diagram of the development of the photoresist processing and development processing system. The longitudinal profile of the L-resist coating and development processing system. The vertical (4) shows the substrate cleaning device according to the present invention. Fig. 5 is a plan view of the substrate cleaning apparatus in the perspective views (4) and (4) of the first embodiment. Fig. 5 is a cross-sectional view of the substrate cleaning apparatus. Fig. 7 is a cross-sectional perspective view showing the cleaning member of the present invention. Fig. 8 is a plan view of the cleaning member. Fig. 9 is a sectional view taken along line ΙΙ-Π of Fig. 8. Fig. 10 (a) and (b) are views showing another modification of the communication groove and the discharge hole in the present invention. Fig. 11 is a plan view showing another embodiment of the cleaning member of the present invention. Fig. 12 is a sectional view taken along line iv-iv of Fig. 11. Fig. 13 shows the first Air in the substrate cleaning device of the embodiment Fig. 14 (a), (b) and (c) are schematic cross-sectional views showing the first step of the operation of the substrate cleaning apparatus of the first embodiment. 21 201013811 The first embodiment of the substrate cleaning apparatus will be described. The operation shows a schematic cross-sectional view of the cleaning state of the cleaning member in the present invention. 糸 shows a schematic cross-sectional view of the state of the lower surface of the wafer during cleaning. Fig. 18 (a) and (b) show the operation of the substrate cleaning apparatus according to the third embodiment. Fig. 19 is a cross-sectional view showing a second embodiment of the substrate cleaning apparatus according to the present invention.

[Main component symbol description] Α1~Α4...transport arm

Bl···1st block (DEV layer) B2...2nd block (BCT layer) B3..·3rd block (COT layer) Β4·_·4th block (TCT layer)

BF2, BF3, TRS, TRS4, TRS6, TRS12, TRS13, CPLU, CPL12, CPL2, CPL3, CPL4, ..., transfer unit B, interface arm, transfer arm D1, first transfer arm D2, second transfer Arm E... Shuttle arm F... Liquid film R... Direction of rotation S1... Carrier block S2... Processing block S3... Interface block S4... Exposure device ΤΙ, T2... Area U1~U4... Thermal system group 22 201013811 U5 U6...rack unit W...semiconductor wafer (wafer) (substrate to be processed) 1...substrate cleaning device (cleaning device) 5...brush 10...adsorption cartridge (holding mechanism) 11...adsorption hole 12...墼supporting portion 13...travel portion 14...well 15 ,61...time belt® 16...pulley 17...side plate 18a...lifting portion 18b...cylinder portion 18...lifting mechanism 19,63...moving mechanism 20···rotating chuck (holding mechanism) 21...shaft portion 22···rotating chuck motor φ 23...lifting mechanism 24...support pin 25...air knife 26...injection port 30...cleaning member 31...cleaning base 32...base portion 33...spray port (cleaning liquid spout) 34...communication hole (cleaning liquid spout) 35...communication groove 35a...inclined surface 2010 13811 35b···lower end opening 35c···guide groove 36...discharge hole 37...mounting portion 37a···male screw 37b...clutch 38a···communication path 38...support shaft 39...wear motor 40...bottom Cup 41...top cup 42...opening 43...drain pipe 44...exhaust pipe 45...inner cup 46...injection nozzle 47...washing liquid nozzle 48-"UV lamp 49...light box 50...cleaning liquid supply source 51...cleaning Liquid supply pipe 52... opening and closing valve 53...flow regulating valve 60...support member 62...belt 63...moving mechanism 70...controller (control mechanism) 80...suction pump (suction mechanism) 81...drain pipe 100... Carrier 24 201013811 101...mounting table 110···developing unit

Claims (1)

201013811 VII. Patent application scope: 1. A substrate cleaning device, comprising: a smart mechanism, the horizontal rotation is processed, the Wei shouting; the cleaning member can rotate around the vertical axis; the rotating mechanism rotates the cleaning member; And the structure is configured to move the cleaning member along the surface to be cleaned of the processed plate; the substrate cleaning device is characterized in that: the green washing member is formed by joining the sponge-shaped cleaning base to the base portion, and the main body and the base And a portion of the core portion of the cleaning base is provided with a slip liquid supply port for connecting the cleaning liquid supply source, and a base groove of the plurality of base yarns, the base end of which is connected to the cleaning liquid discharge port, and the end portion thereof extends Before the peripheral portion of the cleaning member, the base portion of the base portion is provided with a discharge hole connected to the communication groove. The middle plate cleaning device has a towel _ cleaning base. The 卩6 and Wei_connecting holes are formed to be larger than the liquid ejection port of the base portion, and are connected to the cleaning liquid spout and the connecting grooves. 3. If the substrate cleaning apparatus for the freshman 1 or 2 is applied, the towel and the discharge hole have an inclined surface at least in the communication groove, and the inclined surface is inclined from the cleaning surface side toward the cleaning back side in the clear rotation direction. In the substrate cleaning device of the first or second aspect of the patent application, in the present, the raw, and the base, the clearing wire Φ is provided with a plurality of i-domain primers, which are connected to the communication groove. 5. The substrate cleaning device of claim </ RTI> or 2, wherein the towel discharge tube is connected to the discharge holes; and 匕3. The suction mechanism is disposed in the liquid discharge pipe. Eight, schema: 26