CN101620987B - Substrate cleaning apparatus - Google Patents
Substrate cleaning apparatus Download PDFInfo
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- CN101620987B CN101620987B CN2009101427997A CN200910142799A CN101620987B CN 101620987 B CN101620987 B CN 101620987B CN 2009101427997 A CN2009101427997 A CN 2009101427997A CN 200910142799 A CN200910142799 A CN 200910142799A CN 101620987 B CN101620987 B CN 101620987B
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- cleaning
- wafer
- cleaning fluid
- connectivity slot
- cleaning part
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
Abstract
The present invention provides a substrate cleaning apparatus, for preventing cleaning liquid from spraying outside when cleaning, and preventing the cleaning liquid from adhering on a substrate again. The substrate cleaning apparatus includes a rotary clamping disc (20) holding a semiconductor wafer (W) horizontally and rotating around a vertical shaft, a cleaning member (30) capable of rotating around the vertical shaft, a servo motor (39) making the cleaning member to rotate, and a moving mechanism (63) for driving the cleaning member move along a surface to be cleaned of the wafer, wherein the cleaning member is pasted with a spongy cleaning base part (31) on a base part (32), the base part and the central part of the cleaning bottom are provided with discharge outlets (33) connected with a cleaning liquid supply source, the surface of the cleaning bottom is provided with a basic end communicated with the cleaning liquid discharge outlets, a front end extends to a plurality of communicating grooves (35) locating on front of the circumference of the cleaning member, and discharge holes (36) communicated with the communicating grooves are arranged on position wherein the communicating grooves are located in the base part.
Description
Technical field
The present invention relates to be used for cleaning the base plate cleaning device of removing attached to the particle of substrate surfaces such as for example semiconductor wafer or FPD (flat-panel monitor) substrate.
Background technology
Generally speaking, in the manufacture process of semiconductor equipment, form electrode pattern, adopt photoetching technique in order to go up at semiconductor wafer or FPD substrate etc. (below be called wafer etc.).In this photoetching technique, adopt spin-coating method coating photoresist liquid on wafer etc., circuit pattern according to the rules exposes to the resist film that forms thus, and this exposing patterns is implemented development treatment, thereby forms circuit pattern on resist film.
In addition, in the manufacturing process of semiconductor equipment, it is extremely important that wafer etc. is maintained in the clean condition.Therefore, a kind of cleaning device is set, is used for before and after each treatment process, clean the particle of removing attached on the wafer etc. as required.
Used following this base plate cleaning device, it possesses in the past: the rotary chuck that level keeps wafer and rotates around vertical axis; Surround the cover in the outside of rotary chuck; Can be around the cleaning part of vertical axis rotation; The rotating mechanism of rotation cleaning part; The travel mechanism that moves with the face that is cleaned that makes cleaning part along wafer.
In addition, in this base plate cleaning device, known a kind of being configured to, for example use PVA (polyvinyl alcohol) system sponge as cleaning part, the therefrom groove shape recess of mind-set side opening is set on the cleaning surface of this sponge, the central part of each groove shape recess is communicated with (for example, with reference to patent documentation 1) with the cleaning fluid discharge opening.By central part and the cleaning fluid discharge opening that is communicated with each groove shape recess like this, always supply with new cleaning fluid to the central portion of cleaning part.
No. 3059641 communique of [patent documentation 1] patent (paragraph 0027, Fig. 5, Fig. 6)
But, there is following problem in the technology of patent documentation 1 record, because the groove shape recess to peripheral openings is set on the cleaning surface of cleaning part, so in the clean process, the cleaning fluid of discharging from groove shape recess disperses to periphery, a part of cleaning fluid of bump cover rebounds and produces spraying, and this spraying will be once more attached to wafer surface.
Summary of the invention
The present invention In view of the foregoing researches and develops, and its purpose is to provide a kind of base plate cleaning device, produces the spraying of the cleaning fluid that disperses to foreign side when being used to be suppressed at clean, prevents that it is once more attached on the substrate.
In order to solve above-mentioned technical task, base plate cleaning device of the present invention is characterized in that, comprising: processed substrate is remained level and centers on the holding unit that vertical axis is rotated; Can be around the cleaning part of vertical axis rotation; Make the rotating mechanism of above-mentioned cleaning part rotation; The travel mechanism that moves with the face that is cleaned that makes above-mentioned cleaning part along above-mentioned processed substrate, wherein, above-mentioned cleaning part engages bottom spongiform cleanings and constitutes in base portion, be provided with the cleaning fluid discharge opening that is connected with the cleaning solution supplying source in said base portion with the central part that cleans the bottom, being provided with cardinal extremity in above-mentioned cleaning bottom is communicated with above-mentioned cleaning fluid discharge opening, and front end extends to a plurality of connectivity slots of the peripheral edge portion front of cleaning part, and the position at the above-mentioned connectivity slot place in said base portion is provided with the tap (first aspect) that is communicated with connectivity slot.In this case, it is big preferably also to be provided with the cleaning fluid discharge opening of relative aperture base portion at the central part of above-mentioned cleaning part, and the buffering usefulness intercommunicating pore (second aspect) that is communicated with cleaning fluid discharge opening and each connectivity slot.
According to above-mentioned this structure, not only can be under the approaching state of the cleaning surface of face that is cleaned that makes processed substrate and cleaning part, formation is by from the liquid film around the cleaning of the cleaning fluid displacement of the cleaning fluid discharge opening ejection of the central part of the cleaning part of vertical axis rotation, implement clean then, and can discharge and be cleaned particle that parts remove and the cleaning fluid that is used to clean to cleaning rear side from connectivity slot and tap.In addition, be not cleaned particle that parts remove and the cleaning fluid that is used to clean owing to discharge, but it is discharged to cleaning rear side, therefore, the revolution of cleaning part can be set at higher revolution from the outer circumferential side (perimeter sides) of cleaning part.In the case, the cleaning fluid discharge opening that the relative aperture base portion is set at the central part of cleaning part is big, and, so just can make from the cleaning fluid discharge opening to spray the cleaning fluid equalization of (supply) and successfully flow into each connectivity slot (second aspect) with the buffering intercommunicating pore that cleaning fluid discharge opening and each connectivity slot are communicated with.
In the present invention, the connectivity slot at least in preferred above-mentioned connectivity slot and the tap has and cleans the inclined plane (third aspect) that rear side is gone along the direction of rotation of cleaning part from the clean surface side direction.
According to above-mentioned this structure, can promptly discharge and to be cleaned particle that parts remove and the cleaning fluid that is used to clean along with the rotation of cleaning part.
In the present invention, also can on the concentric circles of the clean surface bottom the above-mentioned cleaning, one or more guiding groove (fourth aspect) that is communicated with the connectivity slot of adjacency be set.
According to above-mentioned this structure, can will be cleaned the particle that parts remove and the cleaning fluid that is used to clean initiatively discharged then to connectivity slot and tap guiding by guiding groove.
In addition, in the present invention, can also comprise discharging tube that is communicated with above-mentioned each tap and the attraction unit (the 5th aspect) that is located in this discharging tube.
According to above-mentioned this structure, can discharge effectively and be cleaned particle that parts remove and the cleaning fluid that is used to clean.In addition, attract the unit initiatively to discharge, therefore, can adjust the revolution of cleaning part and the quantity delivered of adjusting cleaning fluid owing to can utilize.
According to the present invention,, therefore, can obtain following significant effect owing to adopt above-mentioned structure.
(1) invention of putting down in writing according to first aspect, owing to can discharge and be cleaned particle that parts remove and the cleaning fluid that is used to clean to cleaning rear side from connectivity slot and tap, therefore, produce the cleaning fluid spraying of dispersing in the time of can being suppressed at clean, prevent that it is once more attached on the substrate to foreign side.In addition, not that outer circumferential side (perimeter sides) from cleaning part is discharged and to be cleaned particle that parts remove and the cleaning fluid that is used to clean, but it is discharged to cleaning rear side, so just the revolution of cleaning part can be set at higher revolution, therefore, can improve cleaning efficiency.In the case, the cleaning fluid discharge opening that the relative aperture base portion is set at the central part of above-mentioned cleaning part is big, and the buffering intercommunicating pore that is communicated with cleaning fluid discharge opening and each connectivity slot, so just can make from the cleaning fluid discharge opening and spray the cleaning fluid equalization of (supply) and successfully flow into each connectivity slot, therefore, the cleaning fluid of supplying clean (second aspect) always.
(2),, therefore, except the effect of above-mentioned (1), can also improve cleaning efficiency owing to can promptly discharge and to be cleaned particle that parts remove and the cleaning fluid that is used to clean along with the rotation of cleaning part according to the invention of third aspect record.
(3) invention of putting down in writing according to fourth aspect, owing to can will be cleaned the particle that parts remove and the cleaning fluid that is used to clean initiatively discharged then to connectivity slot and tap guiding by guiding groove, therefore, except the effect of above-mentioned (1), (2), can also improve cleaning efficiency.
(4) invention of putting down in writing according to the 5th aspect, by being connected with attracting the unit with the discharging tube that each tap is communicated with, so just can discharge effectively and be cleaned particle that parts remove and the cleaning fluid that is used to clean, therefore, except the effect of above-mentioned (1)～(3), can also suppress to produce spraying, prevent once more attached on the substrate.In addition, attract the unit initiatively to discharge, therefore, can adjust the revolution of cleaning part and the quantity delivered of adjusting cleaning fluid, therefore, can under the state of the best, implement clean owing to can utilize.
Description of drawings
Fig. 1 is that the resist liquid of expression application base plate cleaning device of the present invention applies, the general view of an example of developing system.
Fig. 2 is the approximate three-dimensional map of above-mentioned resist liquid coating, developing system.
Fig. 3 is the summary longitudinal section of above-mentioned resist liquid coating, developing system.
Fig. 4 is the stereogram (a) of first execution mode of expression base plate cleaning device of the present invention and the amplification stereogram of I portion (a).
Fig. 5 is the plane graph of aforesaid substrate cleaning device.
Fig. 6 is the sectional view of aforesaid substrate cleaning device.
Fig. 7 is the cross-sectional perspective view of the cleaning part among expression the present invention.
Fig. 8 is the plane graph of above-mentioned cleaning part.
Fig. 9 is the sectional view along the II-II line of Fig. 8.
Figure 10 is the connectivity slot of expression among the present invention and the sectional view of other variation of tap, is the sectional view along the III-III line of Fig. 8.
Figure 11 is the plane graph of the alternate manner of the cleaning part among expression the present invention.
Figure 12 is the sectional view along the IV-IV line of Figure 11.
Figure 13 is the stereogram of air knife (air knife) in the base plate cleaning device of expression first execution mode.
Figure 14 is the first operation summary sectional view of action that is used for illustrating the base plate cleaning device of first execution mode.
Figure 15 is the second operation summary sectional view of action that is used for illustrating the base plate cleaning device of first execution mode.
Figure 16 is the summary sectional view of the cleaning state of the cleaning part among expression the present invention.
The summary sectional view of the state below the wafer when Figure 17 is the expression cleaning.
Figure 18 is the general view that is illustrated in the zone that is cleaned in each action of base plate cleaning device of first execution mode.
Figure 19 is the sectional view of second execution mode of expression base plate cleaning device of the present invention.
Symbol description
W semiconductor wafer (processed substrate)
The F liquid film
The R direction of rotation
10 absorption layers (holding unit)
20 rotary chucks (holding unit)
22 rotary chuck motor
30 cleaning parts
31 clean the bottom
32 base portion
33 discharge openings (cleaning fluid discharge opening)
34 intercommunicating pores (cleaning fluid discharge opening)
35 connectivity slots
The 35a inclined plane
The 35c guiding groove
36 taps
50 cleaning solution supplying sources
51 cleaning solution supplying pipes
53 flow rate regulating valves
70 controllers (control unit)
80 suction pumps (attraction unit)
81 discharging tubes
Embodiment
Below, based on accompanying drawing preferred forms of the present invention is described in detail.Herein, near the outlet to the resist liquid coating that base plate cleaning device of the present invention is arranged on semiconductor wafer, developing system, its situation of carrying to follow-up exposure device is described after cleaning the back side of the wafer that forms resist film.
Fig. 1 is the general view of the coating of resist liquid, developing system, and Fig. 2 is the approximate three-dimensional map of the coating of resist liquid, developing system, and Fig. 3 is the summary longitudinal section of the coating of resist liquid, developing system.
In the coating of resist liquid, developing system, be provided with carrier block S1, handing-over arm C takes out wafer W and is handed off to processing block S2 then from be positioned in the closed carrier 100 on the mounting table 101, handing-over arm C obtains the wafer W that disposes from processing block S2 and then it put back to the carrier 100.
For base plate cleaning device 1 of the present invention (below be called cleaning device 1), when from processing block S2 during, that is, as shown in Figure 1, the back side as the wafer W of process object is cleaned at the inlet portion of interface block S3 to exposure device S4 handing-over wafer W.
As shown in Figure 2, in this example, processing block S2 is made of the 4th (TCT layer) B4 that handles that form that the 3rd (COT layer) B3 and being used for that forms second (BCT layer) B2 handling, is used for implementing the coating of resist film that stacks gradually first (DEV layer) B1 being used for implementing development treatment from the below, is used for being implemented in the formed antireflection film of lower floor of resist film is implemented in the formed antireflection film in upper strata of resist film.
Second (BCT layer) B2 and the 4th (TCT layer) B4 are respectively by the coating element of the soup that is used for forming antireflection film with the spin-coating method coating; Be used for being implemented in the pre-treatment of the processing that this coating element implements and the heating of reprocessing, the processing unit group of cooling system; And between above-mentioned coating element and processing unit group, be provided with, and carrying arm A2, the A4 of handing-over wafer W constitutes between them.For the 3rd (COT layer) B3, except treatment fluid was resist liquid, all the other structures were identical.
On the other hand, for first (DEV layer) B1, as shown in Figure 3, at a two-layer developing cell 110 of DEV layer B1 inner stacks.The carrying arm A1 that is used for to these two-layer developing cell 110 conveyance wafer W is set in DEV layer B1.That is, carrying arm A1 in two-layer developing cell by shared.
And then, as Fig. 1 and shown in Figure 3, in processing block S2, be provided with separator unit U5, but be arranged near the first handing-over arm D1 of the free lifting the separator unit U5 to handing-over for example second (BCT layer) the B2 pairing handing-over unit CPL2 in unit of separator unit U5 conveyance successively from the wafer W of carrier block S1.Then, wafer W is joined unit CPL2 to each unit (the processing unit group of antireflection film unit and heating, cooling system) conveyance by the carrying arm A2 in second (BCT layer) B2 from this, and forms antireflection film in these unit.
Then, but the first handing-over arm D1, the handing-over unit CPL3 and the carrying arm A3 of separator unit U5 of the handing-over unit BF2 of wafer W by separator unit U5, near be provided with separator unit U5 free lifting are moved into the 3rd (COT layer) B3, and are formed resist film.And then wafer W is by from carrying arm A3 → the be handed off to handing-over unit BF3 of separator unit U5.In addition, the wafer W that is formed with resist film also forms antireflection film sometimes in the 4th (TCT layer) B4.In the case, wafer W is joined to carrying arm A4 by handing-over unit CPL4, after forming antireflection film, is joined to handing-over unit TRS4 by carrying arm A4.
On the other hand, the top in DEV layer B1 is provided with the shuttle swing arm E as special-purpose conveyance unit, and it is used for the directly handing-over unit CPL12 conveyance in being located at separator unit U6 of the handing-over unit CPL11 of wafer W from be located at separator unit U5.The wafer W that forms resist film and antireflection film is joined to handing-over unit CPL11 from handing-over unit BF3, TRS4 by handing-over arm D1, and from here by the handing-over unit CPL12 of the direct conveyance of shuttle swing arm E to separator unit U6.Herein, as shown in Figure 1, as the handing-over arm D2 of the conveyance unit that between separator unit U6 and cleaning device 1, is provided with can rotate freely, the mode of advance and retreat and lifting constitutes, and possesses two carrying arms of the wafer W of respectively special conveyance before and after cleaning.Wafer W is joined the special-purpose arm of cleaning of arm D2 takes out from handing-over unit TRS12, and is moved in the cleaning device 1 of the present invention, accepts the back side then and cleans.The wafer W that cleaning finishes is joined after the cleaning of arm D2 special-purpose arm and is positioned in after handing-over unit TRS13 goes up, and S3 fetches by interface block.The handing-over unit of mark CPL among Fig. 3 is double does the cooling unit that temperature adjustment is used, the handing-over unit of mark BF is double do can a plurality of wafer W of mounting buffer cell.
Then, wafer W by interface arm B conveyance to exposure device S4, be subjected to the exposure-processed of regulation herein after, be positioned on the handing-over unit TRS6 of separator unit U6, make it return processing block S2 then.Then, wafer W is subjected to development treatment in first (DEV layer) B1, and is joined handing-over unit TRS to separator unit U5 by carrying arm A1.Afterwards, by the handing-over unit of the access range of the handing-over arm C of the first handing-over arm D1 conveyance to the separator unit U5, and by handing-over arm C return of carrier.In Fig. 1, U1～U4 is respectively the hot system unit group of stacked heating part and cooling end.
Below, with reference to Fig. 4 to Figure 18, cleaning device of the present invention is described in detail.
(first execution mode)
Fig. 4 is the stereogram (a) of cleaning device 1 and I portion amplification stereogram (b) (a), and Fig. 5 is the plane graph of cleaning device 1, and Fig. 6 is the longitudinal section of cleaning device 1.
As shown in Figure 4, be equipped with two absorption layers 10 in cleaning device 1, each absorption layer 10 for example is made of elongated piece.Two absorption layers 10 can support and keep near the part of periphery (first area) at the wafer W back side in almost parallel ground.Absorption layer 10 is connected with suction tube not shown in the figures, has the function as the vacuum chuck by adsorption hole shown in Figure 5 11 absorption and maintenance wafer W.As shown in Figure 4, each absorption layer 10 is installed in the substantial middle position of slender rod shaped mat support 12, two ends of these two mat supports 12 are mounted respectively in two beam portions 13, so just constitute the well beam of being made up of mat support 12 and beam portion 13 14.
The two ends of two beam portions 13 are individually fixed in the outside of two the relative sidewalls that cover 40 down (towards the front of Fig. 1 side and inboard sidewall) two of setting up along these sidewalls and are with on 15 synchronously.Each is hung on two one group the pulley 16 by volume with 15 synchronously, and each pulley 16 is installed in respectively on two side plates 17 that are provided with above-mentioned two parallel sidewalls.Pulley 16 links with the travel mechanism 19 that constitutes mobile unit, by pulley 16 or be with 15 trave lling girder portions 13 synchronously, so just can make whole well beam 14 freely mobile along Fig. 4, directions X shown in Figure 5.
In addition, as shown in Figure 4, each side plate 17, its bottom surface is supported by lifting unit 18a and two groups of elevating mechanisms 18 that the 18b of cylinder portion of lifting unit 18a lifting is formed, and is fixed on the framework bottom surface not shown in the figures of cleaning device 1.Be provided with driving mechanism on the elevating mechanism in these elevating mechanisms 18,, so just can make the Z direction lifting of whole well beam 14 in the figure by making lifting unit 18a lifting in the 18b of cylinder portion.
In addition, stride on the well beam 14 establish be used for suppressing ring-type that cleaning fluid disperses on cover 41.On last cover 41, be provided with the big peristome of relative aperture wafer W 42, like this, just can join wafer W between conveyance unit and the absorption layer 10 etc. by this peristome 42.As shown in Figure 6, be crossed on going up on the well beam 14 and cover 41 along with the action of well beam 14 is moved to directions X and Z direction.
Above-mentioned rotary chuck 20 is the plectanes from the back side central portion (second area) of below supporting wafer W.Rotary chuck 20 is set at the centre of two absorption layers 10 of almost parallel configuration, and is not overlapping by the first area and the second area at each substrate holding unit (absorption layer 10, rotary chuck 20) wafer supported W back side.As shown in Figure 6, rotary chuck 20 is by axial region 21 and for example rotary chuck motor 22 bindings of driving mechanism, and rotary chuck 20 can rotate freely and lifting by this rotary chuck motor 22.In addition, same with absorption layer 10, rotary chuck 20 also is connected with suction tube not shown in the figures, has the function as the vacuum chuck by adsorption hole shown in Figure 5 11 absorption and maintenance wafer W.
Be provided with the fulcrum post 24 that links with elevating mechanism 23 in the side of rotary chuck 20, the back side that can supporting wafer W and can lifting, by with the cooperating of the conveyance unit of outside, can be from the conveyance unit to absorption layer 10, perhaps from rotary chuck 20 to conveyance unit handing-over wafer W.
And then, as shown in Figure 4, around rotary chuck 20 and fulcrum post 24, be provided with the air knife 25 that forms the encirclement parts that surround these instruments.Air knife 25 forms gas ejection ports 26 in the upper end of cylinder (encirclement parts) along circumferencial direction, has function as drying unit, spray for example gas such as compressed air from this jet 26 to the wafer W back side, thereby cleaning fluid is blown away the outside of cylinder, during left-hand tools chuck 20 handing-over wafer W, the surface that makes rotary chuck 20 under dry status is in contact with one another with the back side (second area) of the substrate that is supported by this rotary chuck 20.As shown in figure 17, air knife 25 for example is made of dual cylinder, and so just the gas that can will be supplied to from supply unit not shown in the figures supplies to jet 26 by the hollow bulb between this dual cylinder.
Then, with reference to Fig. 7 to Figure 12 the cleaning part 30 at the clean wafers W back side is described.Cleaning part 30 for example by the spongiotic discoideus cleaning of PVA (polyvinyl alcohol) system bottom 31 and with clean the bottom 31 for example plastic discoideus base portion that engage below 32 and constitute, be provided with the cleaning fluid discharge opening 33 that is connected with cleaning solution supplying source 50 (below be called discharge opening 33) at base portion 32 and the central part that cleans bottom 31.
In the case, the bore of the discharge opening of cleaning bottom 31 forms greatlyyer than the discharge opening 33 of base portion 32.In addition, be provided with cardinal extremity at the peripheral part that cleans bottom 31 and be communicated with, and front end extends to a plurality of (representing 4 in the accompanying drawings) connectivity slot 35 of front of the peripheral edge portion of cleaning part 30 with intercommunicating pore 34.
In addition, the position at 35 places of the connectivity slot in base portion 32 is provided with the outlet 36 of a plurality of (4) the slotted hole shape that is communicated with each connectivity slot 35 respectively.In addition, below the central part of base portion 32, be provided with discharge opening 33 and be communicated with, and the installation portion 37 that is connected with cleaning solution supplying source 50 by cleaning solution supplying pipe 51.Periphery at installation portion 37 is provided with external screw thread 37a, and the bolster 38 that has access 38a by coupler (coupler) 37b links with installation portion 37.In addition, the lower end of bolster 38 links with servomotor 39 as rotating mechanism, utilizes the driving of servomotor 39, and cleaning part 30 can be around the vertical axis rotation.
Cleaning part 30 is installed in the front end of its support unit 60 of supporting, and in order not disturb with wafer W or beam portion 13, support unit 60 forms the shape that bends to crank-like.The cardinal extremity of this support unit 60 is fixed on the direction that is provided with rotary chuck 20 from Fig. 4 and observes cleaning part 30 along being with on 61 synchronously that the sidewall of inboard sets up.Be with 61 quilt volumes to hang on two pulleys 62 synchronously, these pulleys 62 are installed in the sidewall outer of above-mentioned inboard.One of them pulley 62 links with travel mechanism 63, by be with 61 synchronously, support unit 60, cleaning part 30 is freely moved to Fig. 4, Y direction shown in Figure 5.
In addition, in cleaning solution supplying pipe 51, be provided with open and close valve 52 and flow rate regulating valve 53 from cleaning solution supplying source 50 towards cleaning part 30 sides.Flow rate regulating valve 53 and servomotor 39 are electrically connected with the controller as control unit not shown in the figures, according to the control signal of coming self-controller, and the flow of control cleaning fluid and the revolution of cleaning part 30.
For the cleaning part 30 that adopts aforesaid way to constitute, the following approaching state of cleaning surface in the top and wafer W rotates around vertical axis by the driving of servomotor 39 down, simultaneously, spray (supply) from cleaning solution supplying source 50 cleaning liquid supplied from discharge opening 33, and the wafer W that horizontally rotates of driving by rotary chuck 20 between form under the state of liquid film of cleaning fluid it slided, so just can remove the particle below the wafer W.At this moment, as shown in figure 16, below wafer W, (be cleaned face) and the liquid film F that forms between (cleaning surface) above the cleaning part 30 in, the cleaning fluid that is used to clean is discharged to the below by connectivity slot 35 from the tap 36 of lower opening.Therefore, the cleaning fluid that can suppress to be used to clean bumps against cover 41 and disperses then and produce spraying.
In addition, also can in the connectivity slot at least 35 in connectivity slot 35 and tap 36, be provided with along the direction of rotation of cleaning part 30 and clean the inclined plane 35a that rear side is gone as shown in figure 10 from the clean surface side direction.Specifically, can be shown in Figure 10 (a), in connectivity slot 35 and tap 36, be provided with along the direction of rotation R of cleaning part 30 and clean the inclined plane 35a that rear side is gone from the clean surface side direction, perhaps, also can be shown in Figure 10 (b), in connectivity slot 35, be provided with along the direction of rotation R of cleaning part 30 and clean the inclined plane 35a that rear side is gone, make tap 36 form the vertical configuration that is communicated with the 35b of lower ending opening portion of skewed connectivity slot 35 from the clean surface side direction.
As mentioned above, be provided with in the connectivity slot at least 35 in connectivity slot 35 and tap 36 along the direction of rotation of cleaning part 30 and clean the inclined plane 35a that rear side is gone, so just can promptly discharge and be cleaned particle that parts 30 are removed and the cleaning fluid that is used to clean along with the rotation of cleaning part 30 from the clean surface side direction.
In addition, as Figure 11 and shown in Figure 12, also can on the concentric circles of the clean surface of the cleaning of cleaning part 30 bottom 31, the guiding groove 35c that is communicated with the connectivity slot 35 of adjacency be set.Be provided with two guiding groove 35c in the accompanying drawings, but also can be more than one or three.
By adopting above-mentioned this structure, can utilize guiding groove 35c will be cleaned the particle that parts 30 remove on one's own initiative and the cleaning fluid that is used to clean discharged then to connectivity slot 35 and tap 36 guiding.
In addition, as shown in Figure 6, be provided with in the bottom of covering 40 down and be used for discharging the discharge pipe 43 that is trapped in the cleaning fluid in the following cover 40 and two blast pipes 44 that are used for discharging the air-flow in the cleaning device 1.In order to prevent that the cleaning fluid that is trapped in down cover 40 bottoms from flowing in the blast pipe 44, blast pipe 44 extends upward from covering 40 bottom surface down, and, can directly not splash into the blast pipe 44 in order to make from the cleaning fluid of top drippage, the inner cover 45 that it is installed in the cover of the formation ring-type around the air knife 25 covers.
Moreover, above the peristome 42 of last cover 41, set up blowing nozzle 46, be used for after finishing clean wafers W, near the blowing out pressurised air last direction wafer W neighboring etc. is auxiliary then remaining cleaning fluid is carried out drying.This blowing nozzle 46 possesses elevating mechanism not shown in the figures, for move into when taking out of wafer W not with by the mutual interference and keeping out of the way upward mutually of the wafer W of conveyance or conveyance unit.In addition, the interior side's side setting at last cover 41 is used at remover liquid nozzle 47 from cleaning fluid to the wafer W back side that supply with cleaning fluid when cleaning part 30 is supplied with.
In addition, with the sidewall of 15,61 following cover 40 the lamp box 49 of taking in UV lamp 48 is installed synchronously not setting up each.The wafer W of process object is moved into from left directions X and is taken out of in the cleaning device 1, and at this moment by UV lamp 48 tops.The effect of UV lamp 48 is, to the back side illuminaton ultraviolet ray that finishes to clean the wafer W of being taken out of then, the particle that remains in the wafer W back side is shunk.
In addition, as shown in Figure 5, each travel mechanism 19,63 and UV lamp 48, be set at the controller 70 that pressure adjustment part not shown in the figures on the blast pipe 44 etc. is used as the control unit of the molar behavior that is used for controlling coating, developing apparatus and control.Controller 70 for example is made of the computer with program storage part not shown in the figures, storing computer program in program storage part, this computer program possesses between absorption layer 10 and rotary chuck 20 step (order) of wafer W that handing-over obtains from the carrying device of outside and the action that utilizes brush 5 clean wafers W etc. and organizes.And this computer program controlled device 70 is read, like this, and the action of controller 70 control cleaning devices 1.In addition, this computer program for example is stored in the memory cell such as hard disk, CD, magneto optical disk, storage card, and is stored in the program storage part under this state.
According to the structure of above explanation, the action at the back side of clean wafers W is described with reference to Figure 14～Figure 18.Figure 14 and Figure 15 are the summary longitudinal sections of each action that is used for illustrating the cleaning device 1 at the clean wafers W back side.Figure 16 is the summary sectional view of the cleaning state of expression cleaning part 30, the summary sectional view of the state when Figure 17 is the expression cleaning below the wafer W.Figure 18 is under each state that is adsorbed pad 10 or rotary chuck 20 maintenances, the summary floor map in the zone that is cleaned of wafer W.In addition, in these figure,, suitably omit UV lamp 48 and blowing nozzle 46 etc. as required in order to illustrate conveniently.
Shown in Figure 14 (a), for example the conveyance unit of horseshoe-shape (the second handing-over arm D2) moves into the process object wafer W in the cleaning device 1, stop above the peristome 42 of last cover 41 then, fulcrum post 24 rises standby below the conveyance unit then from the below of rotary chuck 20.The conveyance unit descends from the top of fulcrum post 24, then wafer W is joined to fulcrum post 24, and withdraws to the outside of cleaning device 1.At this moment, absorption layer 10 the face that keeps wafer W than cleaning part 30 above high position standby, rotary chuck 20 is kept out of the way to than position low above the cleaning part 30.According to above-mentioned this position relation, if fulcrum post 24 descends, so, wafer W is at first given absorption layer 10 (Figure 14 (b)) by handing-over.
Afterwards, absorption layer 10 absorption wafer W, and under the state that keeps wafer W, move to right.Then, with the wafer W conveyance to preposition (for example, the position of the left end basically identical of the left end of air knife 25 and wafer W), absorption layer 10 descends, then with the back side of wafer W by top (Figure 14 (c)) that be pressed in cleaning part 30.
Then, make air knife 25 action with prevent that cleaning fluid from spreading and surface attached to rotary chuck 20 after, make near cleaning part 30 rotations below the wafer W, simultaneously, supply with cleaning fluids, the back side of beginning clean wafers W from the discharge opening 33 of cleaning part 30.The back side is cleaned according to moving with the combination of moving of cleaning part 30 of 10 pairs of wafer W of absorption layer and is carried out.Specifically, shown in Figure 18 (a), cleaning part 30 moves back and forth on the Y direction in the drawings, when switching the moving direction of cleaning part 30, makes absorption layer 10 only move the distance shorter than the diameter of cleaning part 30 to directions X.Like this, cleaning part 30 forms the track shown in the arrow, moves at the wafer W back side, can clean the regional T1 that is smeared by upper left oblique line in the figure comprehensively.
Herein, in the process of cleaning, the whole back side of wafer W such as Figure 16 and the liquid film F that is cleaned liquid shown in Figure 17 cover, and are cleaned the following cover 40 that particle that parts 30 remove flows to the below with the connectivity slot 35 and the tap 36 of the cleaning fluid that is used to clean by cleaning part 30.Therefore, as shown in figure 16, can suppress to comprise the cleaning fluid bump that is cleaned the particle that parts 30 remove and go up the inwall of cover 41 and disperse and produce spraying.The particle of being removed by other cleaning part 30 is rinsed flow direction cover 40 down with the cleaning fluid that flows down from the wafer W back side.In addition, towards the ejection of the wafer W back side, cleaning fluid is blown to the outside of air knife 25 to gas from the jet 26 of air knife 25, and like this, the wafer W back side relative with air knife 25 just is held dry status (with reference to Figure 17).According to this structure, can prevent that the cleaning fluid at the cover wafers W back side from flowing into air knife 25 inboards.Like this, the state that the surface of rotary chuck 20 is often kept dry can prevent the pollution of processed cleaning fluid and form watermark.
After the cleaning that finishes above-mentioned zone T1, mobile absorption layer 10 makes the wafer W central part in the top of rotary chuck 20 (Figure 15 (a)), then, from absorption layer 10 to rotary chuck 20 handing-over wafer W.The handing-over of wafer W is carried out by the following method, for example under the state that makes air knife 25 action, stop the supply of the moving of cleaning part 30, rotation and cleaning fluid, and the absorption of 10 pairs of wafer W of releasing absorption layer, the rotary chuck kept out of the way 20 is risen and the back side of supporting wafer W, then, absorption layer 10 is kept out of the way downwards.
The rotary chuck 20 of handing-over wafer W is according to the height absorption wafer W identical substantially with absorption layer 10, and therefore, cleaning part 30 becomes the state near (being cleaned face) below the wafer W.Therefore, make cleaning part 30 rotations once more and supply with cleaning fluid, like this, restart the back side and clean (Figure 15 (b)).At this moment, the back side is cleaned according to the rotation of rotary chuck 20 and the combination of moving of cleaning part 30 and is carried out.Specifically, shown in Figure 18 (b), at first, make cleaning part 30 move to the position of most peripheral that can clean wafers W, rotate wafer W then at leisure, after wafer W rotation once, make cleaning part 30 move the diameter distance of comparing cleaning part 30 with the annular section that is cleaned in formerly the action, move to the position that to clean inner peripheral surface, repeat same action then.According to this action, move on the back side of wafer W while draw the track of concentric circles, can clean the regional T2 that is smeared by upper right oblique line in the figure all sidedly.
Herein, the whole zone of regional T1 and regional T2 comprises the whole back side of wafer W shown in Figure 18 (b), for the dead angle that can not occur not being cleaned, adjusts the size and the moving range of each instrument.In addition, in the process that keeps wafer W to clean then with rotary chuck 20, not only supply with cleaning fluid from cleaning part 30, in Figure 15 (b), also the washer jet 47 that is provided with from the left side at air knife 25 is supplied with cleaning fluid.Like this, also the reason of supplying with cleaning fluid from washer jet 47 is, if mix mutually with dry zone in the zone of wafer W surface wettability, so, when making cleaning fluid dry, will produce watermark, therefore, make cleaning fluid spread all over whole surface, suppress to produce watermark with this.
Like this, if the cleaning at the whole back side of wafer W finishes, so, stop cleaning part 30 rotation, move, the supply of cleaning fluid and the rotation of rotary chuck 20, the drying action that enters cleaning fluid then.Dry by the cleaning fluid that the rotary chuck high speed rotating is got rid of attached to the wafer W back side.As mentioned above, by once drying, so just can suppress to produce watermark by comprehensive moistening wafer W.At this moment, the blowing nozzle 46 of keeping out of the way the top is descended, simultaneously, mobile support parts 60 are so that the cross blowing nozzle 46 of cleaning part 30 is positioned at the wafer W edge part, then above the wafer W edge part and below blow gas, accelerate to dry with this.Moreover, can't the second area that be rotated chuck 20 maintenances be dried, still,, therefore, can produce watermark hardly owing under by air knife 25 dry status, contact with rotary chuck 20.
After cleaning and drying according to the whole back side of release wafer W of above explanation, the action according to opposite when moving into joins wafer W to the conveyance unit.At this moment, turn on Fig. 4～UV lamp 48 shown in Figure 6, with horseshoe-shape from the below of conveyance unit towards the ultraviolet ray of wafer W back side illuminaton, even under the situation that has particle to adhere to, because organic substance is decomposed under ultraviolet irradiation, therefore, this particle is shunk, thus the influence of minimizing non-focusing etc.
Carry out simultaneously with the action of taking out of of wafer W, absorption layer 10 and rotary chuck 20 move to the position shown in Figure 14 (a), wait for moving into of next wafer W then.Then, with reference to Figure 14～Figure 18, a plurality of wafer W are cleaned in the action that repeats to have illustrated successively.
(second execution mode)
Figure 19 is the summary sectional view of second execution mode of expression cleaning device of the present invention.
Second execution mode is initiatively to discharge particle that parts 30 are removed and the situation of the cleaning fluid that is used to clean of being cleaned.Promptly, as shown in figure 19, discharging tube 81 is communicated with (connection) with each tap 36 in being located at cleaning part 30, and this discharging tube 81 is connected with suction pump 80 as the attraction unit, and the active discharge is cleaned particle that parts 30 are removed and the cleaning fluid that is used to clean.In the case, the rotating mechanism of suction pump 80 and cleaning part 30 is the flow rate regulating valve 53 of servomotor 39 and setting in cleaning solution supplying pipe 51, be electrically connected with controller 70, based on the control signal Be Controlled of coming self-controller 70 as control unit.In addition, in second execution mode, other part is identical with first execution mode, therefore, marks identical symbol and omits its explanation for identical part.
According to the cleaning device 1 of second execution mode that adopts aforesaid way to constitute, can discharge particle that is removed by cleaning and the cleaning fluid that is used to clean effectively.In addition,, therefore, the revolution of cleaning part 30 and the quantity delivered of adjusting cleaning fluid can be adjusted, clean can be implemented in the best condition owing to can utilize the sucking action of suction pump 80 to discharge on one's own initiative.
In addition, by the cleaning device 1 that uses second execution mode, except can clean wafers W following, also can be applied in the clean above the wafer W.
(other execution mode)
In addition, in the resist liquid coating of Fig. 1～shown in Figure 3, developing system, the inlet portion that is illustrated in interface block S3 is provided with the example of the related cleaning device of execution mode 1, but the position that cleaning device 1 is set is not limited to this example.For example, both this cleaning device 1 can be set in interface block S3, also can for example be provided with in the separator unit U5,, also can in carrier block S1, be provided with to clean the back side that forms resist film wafer W before at the inlet portion of processing block S2.
In addition, the device that can use the cleaning device 1 of present embodiment is not limited to the coating of resist liquid, developing system.For example, also can use this cleaning device 1 at the annealing device of implementing the annealing process after ion injects.If implement annealing process under the situation of particle attached to the back side of wafer W, so, in this technical process, particle enters from chip back surface, also can form circuit between the transistor on this particle and surface.Therefore, the stock utilization of product so just can be improved in the back side of clean wafers W before this technology.
In addition, in the above-described embodiment, the situation of using cleaning device of the present invention in the coating of the resist liquid of semiconductor wafer, developing system is illustrated, but, also can be applied to processed substrate beyond the semiconductor wafer for example in FPD (flat-panel monitor) substrate, the mask substrate etc.
(embodiment)
Below, the evaluation experimental of doing for cleaning part 30 and the cleaning efficiency of existing cleaning part investigated in the cleaning device of the present invention is described.
(appreciation condition)
Sample: comparative example { has the cleaning part of cleaning fluid discharge opening } at central portion
Embodiment { the cleaning part 30} of first execution mode
Thrust: 0.8N
The rotation number of cleaning part: 500rpm
Cleaning part flushing: 0.0L/min
Groove (Bath) DIW flow: 0.2L/min
The wafer that sample substrate: PSL (Polystyrene Latex) adheres to (hydrophily: 0.309 μ m adheres to about 15000)
Measuring instrument: SP1 (#12F)=SurfscanSp1TB1 (BZ-0200, BZ-0104) { KLA-Tencor Ltd. trade name }
Inspection condition: check particle diameter 0.10 μ m, 0.16 μ m, 0.20 μ m, 1.0 μ m
Inspection area: φ 65-296mm
Experimental machine: brush cleaning module
(evaluation method)
At first, the cleaning part with comparative example and embodiment fully is immersed in the rinse bath.Then, become 0 position, suppose that the cleaning part pressing quantity is 0, after meeting pressing quantity 2.5mm, measure the primary data of wafer (sample substrate) with measuring instrument (SP1) at cleaning part pressure.Then, setup parameter with groove wiper mechanism cleaning official hour and the actual sample of processing, is used the granule number after measuring instrument (SP1) is measured processing then.
According to the result of above-mentioned evaluation experimental, in comparative example, can obtain the result shown in the table 1, can obtain the result shown in the table 2 in an embodiment.
Table 1
| Particle size (μ m) | Before the cleaning | After the cleaning | Remove rate (%) |
| 0.10μm | 11616 | 9295 | 20.0 |
| 0.16μm | 11572 | 8811 | 23.9 |
| 0.20μm | 11564 | 8709 | 24.7 |
| 1.0μm | 8 | 21 | -162.5 |
Table 2
| Particle size (μ m) | Before the cleaning | After the cleaning | Remove rate (%) |
| 0.10μm | 12783 | 1968 | 84.6 |
| 0.16μm | 12702 | 1436 | 88.7 |
| 0.20μm | 12673 | 1351 | 89.3 |
| 1.0 |
21 | 18 | 14.285714 |
Result by above-mentioned evaluation experimental can judge that the embodiment according to using the cleaning part in the cleaning device of the present invention compares with existing cleaning part (comparative example), and the rate of removing of particle will increase substantially.
Claims (4)
1. a base plate cleaning device is characterized in that, comprising:
Processed substrate is remained level, and center on the holding unit of vertical axis rotation;
Can be around the cleaning part of vertical axis rotation;
Make the rotating mechanism of described cleaning part rotation; With
Make described cleaning part along the travel mechanism that the face that is cleaned of described processed substrate moves, wherein,
Described cleaning part engages bottom spongiform cleanings and constitutes in base portion,
Be provided with the cleaning fluid discharge opening that is connected with the cleaning solution supplying source in described base portion with the central part that cleans the bottom,
Is provided with cardinal extremity in described cleaning bottom and is communicated with, and front end extends to a plurality of connectivity slots of the peripheral edge portion front of cleaning part with described cleaning fluid discharge opening,
The position at the described connectivity slot place in described base portion is provided with the tap that is communicated with connectivity slot,
The cleaning fluid discharge opening that also is provided with the relative aperture base portion at the described central part that cleans the bottom is big, and the buffering intercommunicating pore that is communicated with cleaning fluid discharge opening and each connectivity slot.
2. base plate cleaning device as claimed in claim 1 is characterized in that:
Connectivity slot at least in described connectivity slot and the tap has and cleans the inclined plane that rear side is gone along the direction of rotation of cleaning part from the clean surface side direction.
3. base plate cleaning device as claimed in claim 1 is characterized in that:
The described concentric circles that cleans the clean surface of bottom is provided with the one or more guiding grooves that are communicated with the connectivity slot of adjacency.
4. as each described base plate cleaning device in the claim 1～3, it is characterized in that:
Also comprise discharging tube that is communicated with described each tap and the attraction unit that is located in this discharging tube.
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| JP2008-173387 | 2008-07-02 | ||
| JP2008173387A JP5058085B2 (en) | 2008-07-02 | 2008-07-02 | Substrate cleaning device |
| JP2008173387 | 2008-07-02 |
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| CN201110263393.1A Division CN102324396B (en) | 2008-07-02 | 2009-06-04 | Substrate cleaning device |
| CN201110263375.3A Division CN102290331B (en) | 2008-07-02 | 2009-06-04 | Substrate cleaning device |
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| CN101620987A CN101620987A (en) | 2010-01-06 |
| CN101620987B true CN101620987B (en) | 2011-12-28 |
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| CN201110263375.3A Active CN102290331B (en) | 2008-07-02 | 2009-06-04 | Substrate cleaning device |
| CN201110263393.1A Active CN102324396B (en) | 2008-07-02 | 2009-06-04 | Substrate cleaning device |
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| CN201110263375.3A Active CN102290331B (en) | 2008-07-02 | 2009-06-04 | Substrate cleaning device |
| CN201110263393.1A Active CN102324396B (en) | 2008-07-02 | 2009-06-04 | Substrate cleaning device |
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| Country | Link |
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| JP (1) | JP5058085B2 (en) |
| KR (1) | KR101385847B1 (en) |
| CN (3) | CN101620987B (en) |
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| CN102125921B (en) * | 2010-01-20 | 2012-09-05 | 常州瑞择微电子科技有限公司 | Transmission method of optical mask in cleaning process |
| JP5583503B2 (en) * | 2010-07-14 | 2014-09-03 | 東京エレクトロン株式会社 | Substrate cleaning apparatus and coating and developing apparatus provided with the same |
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| JP5790085B2 (en) * | 2011-03-31 | 2015-10-07 | 凸版印刷株式会社 | Cleaning device |
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| TWI485793B (en) * | 2011-12-26 | 2015-05-21 | Chin Cheng Lin | Surface polishing device and surface polishing method |
| CN103418563B (en) * | 2012-05-22 | 2016-12-14 | 盛美半导体设备（上海）有限公司 | Waffer edge cleans device |
| JP5887227B2 (en) * | 2012-08-07 | 2016-03-16 | 株式会社荏原製作所 | Dresser disk cleaning brush, cleaning device and cleaning method |
| CN103730334B (en) * | 2012-10-11 | 2016-08-03 | 沈阳芯源微电子设备有限公司 | A kind of chemical liquid recovery device being applicable to square substrate |
| CN103811383B (en) * | 2014-02-28 | 2017-04-19 | 北京七星华创电子股份有限公司 | wafer drying device and drying method thereof |
| CN105513994B (en) * | 2014-09-22 | 2018-02-02 | 沈阳芯源微电子设备有限公司 | A kind of mechanism for preventing wafer rear from polluting |
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| JP6543534B2 (en) | 2015-08-26 | 2019-07-10 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing equipment |
| KR101909182B1 (en) * | 2015-11-30 | 2018-12-10 | 세메스 주식회사 | Apparatus and method for treating substrate |
| CN105789096B (en) * | 2016-05-04 | 2019-02-05 | 中国电子科技集团公司第四十五研究所 | A kind of wafer cleaning equipment |
| CN110290878B (en) * | 2016-12-29 | 2022-02-01 | 马狮达克股份有限公司 | Cup cleaning device |
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Also Published As
| Publication number | Publication date |
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| KR20100004043A (en) | 2010-01-12 |
| KR101385847B1 (en) | 2014-04-17 |
| JP5058085B2 (en) | 2012-10-24 |
| TW201013811A (en) | 2010-04-01 |
| CN102324396A (en) | 2012-01-18 |
| CN102324396B (en) | 2014-05-28 |
| CN102290331A (en) | 2011-12-21 |
| JP2010016098A (en) | 2010-01-21 |
| TWI390654B (en) | 2013-03-21 |
| CN102290331B (en) | 2014-07-30 |
| CN101620987A (en) | 2010-01-06 |
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