TW201009913A - A LED fragmentation cutting method and product thereof - Google Patents

Abstract

This invention relates to an LED fragmentation cutting method and its related product. The fragmentation comprises: (A) secure an LED chip or an LED epitaxial substrate material onto the retaining seat of a chip; (B) introduce a liquid medium as the acoustic-wave-preventing layer between the cutting tool and chips; (C) activate power to drive a magnetostriction or a piezoelectric ceramic material on the machine to create a piston motion with vertical displacement to expand or compress as the power source; (D) apply an appropriately shaped cutting tool attached with diamond, CBN, or SiC super hard particles by electroforming at one end, and proceed the vertically reciprocating piston motion on the material installed on the retaining seat of chip, so that the super hard particles on the cutting tool causes impact and embeds into the pre-cut work piece for performing the fragmentation cutting method. The LED chip product produced by the aforementioned fragmentation cutting method has a rough surface. The dimension of the roughness of the rough surface is about the particle diameter of the micro-particles, and the cross section is complimentary to that of the shape of the cutting tool. As a result, this invention presents the 3D processing advantages of fragmentation cutting method and offers the optical lens effect to raise the light-emitting efficiency of LED products.

Description

201009913 IX. Description of the Invention: [Technical Field] The present invention relates to an LED chipping and cutting method and a product thereof, and more particularly to an application for electrically driving a magnetostrictive or piezoelectric ceramic material to generate volume expansion or compression. The upper and lower pistons are used as the power source, and the ultra-hard particles such as diamond, eBN and SiC are electroformed on one end to be a fragmentation cutting tool, and the LED wafer or LED epitaxial substrate material placed on the wafer holder is subjected to chipping and cutting processing. By means of a knives, the particles are intermittently driven into the workpiece, and a fragmentation processing method that exerts a large impact force on a small contact area; and a product produced by the application of the fragmentation cutting method includes a cross-section parallelized roughening of the LED dies a product; or a cross-sectional non-parallel roughened LED die product; or a cross-section parallel product having a continuous concave-convex columnar product; or a non-parallel cross-section having a continuous concave-convex columnar product; or a tapered non-parallel cross-section having a continuous concave-convex cylindrical product. In particular, the fragmented and semi-cut LE:D epitaxial substrate having a 1/4λ periodic continuous step has a continuous period 1/4λ optical thickness singular step height” low drop plane, both when the processing reaches the last stage When the substrate is dropped by an odd multiple of the relative wavelength 1/4 λ optical thickness, the LED epitaxial substrate fragmentation half-cut method is terminated. The continuous step height step is periodically filled with the LED epitaxial substrate, which can reduce the secondary processing stress and increase the overlapping chance of the reflected light or the transmitted light. The continuous periodic step height difference substrate is used as the LED epitaxial substrate product. SUMMARY OF THE INVENTION The present invention relates to LED chipping and cutting methods and products thereof, and more particularly to tools for imparting 3D optical structures to product LEDs or LED epitaxial substrates. [Prior Art] According to the 'formerly doing the cutting work of the LED chip, it is used to cut the wafer 201009913 ^ by wire cutting (five) recumng) or by the inner blade round knife two-blade cutting tool, the cutting method is to use the friction / basin ^ The cutting method formed by the movement. However, due to the edge of the frictional force i, the diamond particles on the Wrre or the cutter are prone to fall under the action of the crucible, so the processing efficiency is low.

== At the time, only the section after friction cutting has two thousand phases, but only has a 2D* structure, so most of the material of the efficiency product f ° led is a refractive index material, and its refractive index is about For 3~3·5, depending on the in-situ loss of light, most of the *-shot LED crystals oscillate to form heat, and then the loss is the first time that the rc temperature is reduced by about 5%. One reason. Secondly, the 'Cain 诅-νι family m quality critical angle is small. When the incident angle of light is greater than the critical angle of the second medium, it will all be reflected back to the first-Lit ί reflection, (ie, from m into the heart... 2, 3iLni/ In ic, Sin90.). Both smooth and symmetrical:: out: =: LED light efficiency is not good =, the light efficiency of the technique is only about difficulty right path j = :: light: the aspect is limited to the grain after processing two crystal chip Adhesive LED or organic lens = has been; into a non-parallel section, its processing speed is slow: material difference, such as the use of the 3 for the jujube substrate, because its Mohs = up to 201009913 9 degrees, close to the hardness of the diamond is not easy to be ground Processing, and the surface after processing is very smooth, and it is easy to form the shortcoming of light reflection. For the technology of LED/board processing to increase the brightness, the first invention of China Invention Patent No. 508841 is owned by Nissan Chemical Co., Ltd., which forms periodic stripe, grid or island pores on the LED epitaxial substrate. The protective layer is the best. However, since the protective layer is plated with the heterogeneous material Si〇2 and then etched, it is easy to form the stress caused by the heterogeneous material and increase the defects of the construction work. The advantages and disadvantages of the present invention and the conventional LEI) insect crystal carrier substrate are shown in Table 1. Comparison table of the product of the light-emitting diode epitaxial substrate product of the invention The invention of the invention chemical cutting principle fragmentation cutting method money cutting substrate material homogenous material different t material processing level one level or more is only * - layer light φ characteristic brightening The LED chipping and cutting method of the present invention and its products are proposed by the above-mentioned disadvantages. The cross section of the LED crystal product can form a rough concave-convex shape, which can effectively improve the reflection angle, reduce the reflected light from being reflected back into the grain body by the original direction, and reduce the heat loss caused by the vibration of the light in the crystal body, and can provide external light emission of the LED. The advantages and disadvantages of the efficiency, conventional techniques and processing methods of the present invention are shown in Table 2. 12 201009913 _Comparative table of light-emitting diode crystal gas 本 _ guide user of the present invention

❹ 【Contents】 In view of the current shortcomings of the LED wafer or LED stray substrate, the above-mentioned shortcomings have been studied for many years. Fufa's kind of hard and brittle LED wafers are used to make the knives, and to give the processed UD wafers an excellent (10) grain product. ’ It is also able to protect the optical characteristics of W-Yang Yang processing speed, and the knife f is injured, and the processed product is also given. (4) UD dies with excellent light-emitting efficiency. Another one of the present invention provides - (4) plate splitting and half-cutting 13 201009913 Ο ❹ Method for making fractured and semi-cutted hard and brittle LED epitaxial substrates, _ processed The surface 3D optical characteristics of the LED epitaxial substrate are made to form an LED epitaxial substrate f which is to help light that penetrates or reflects light, and another object of the present invention is to provide an LED chipping and cutting method. A tool that breaks and shreds a semi-cutting tool against a hard and brittle LED or LED epitaxial substrate to produce a product that complements the tool surface or imparts 3D optical properties to the processed LED or LED epitaxial substrate. For the purpose of the present invention, the force of the upper and lower pistons of the volumetric expansion or compression (ie, electrical energy conversion) is generated by using an electrically driven magneto-optical ceramic material as a fragmented cutting emitter chip or a fragmented half-cut LED. The power of the epitaxial substrate ^ ^ ^ One end electroformed with diamond or cBN or SiC super hard micro system = appropriate shape blade as a tool for chipping and cutting; - liquid medium for sound skin reflection prevention, as a tool and A sound-preventing layer between the wafers; a wafer holder, which is used as a device for cutting and cutting a led wafer or an LED chip substrate. Applying the edge of the tool to the super hard particle diamond or cBN or SiC, it exerts a large impact force on the hard and brittle LED wafer or led stray substrate material, and intermittently enters the LED chip or LED epitaxial The substrate workpiece is subjected to chipping or chipping and semi-machining. It can produce the most processing times in the shortest time. For example, the application power source is 5〇KHZ, which represents 50,000 times per second processing 0. 16um depth. More than the frictional linear motion expresser, and HZ (frequency) and The load is related to 'when the cutting is going to the grain part, the contact area is larger, the resistance is increased, and the load is increased, the hard impact is formed." Generally, the mechanical processing encounters such a hard impact, and the processing tool is not subject to the processing tool. Damage, the power source applied by the method of the present invention is a magnetostrictive or electrical energy conversion of mechanical energy to the 201009913 electric ceramic material. When the load is increased, the frequency is automatically reduced to reduce the hard impact of the processed article, so the LED chip is particularly suitable. Or a method of fragmentation of a hard and brittle material such as a led epitaxial substrate material. The process is as follows: Bing Jia A· Fix the processed LED chip on the wafer holder for use. B. Start the liquid coolant through the tool to prevent the acoustic medium between the wafers and use it as a tool and wafer coolant. Ο ❹ C. =i = ? Magnetostrictive or piezoelectric ceramic material produces volumetric expansion and compression of the upper and lower displacement piston motion impact. D·Application - Electroformed on the end face with diamond or sm line continuously intermittently cuts the particles 3 J on the surface of the blade, and is completed by the above four steps = : upper = two split: if the wafer is completely cut off during completion Crystallized Εχιή^ ^ The LED chip is taken out and then cracked into a grain product by high temperature shock, and the LED fragmentation and half-cutting method is completed by the above A, , ::: ::: Five steps of throwing E, such as the above-mentioned LED chipping and half-cutting method, more - the = optical thickness refers to the wavelength of the corresponding light), and the MW period high and low differential threats 201009913 F. Take out the LED stupid crystal substrate Chemical polishing of fluoride or hydrofluoric acid to produce LED stray crystal substrate 'After the above steps a, B, C, Da, F, the LED microcrystalline chip fragmentation and half-cutting method is completed. The LED chipping and cutting method of the invention mainly improves the previous [ED grain cutting method] to replace the friction cutting by the chipping cutting, and the same one-time cutting process can not only impart the optical characteristics of the LED die, but also solve the problem. High luminous efficiency produces a problem of low light extraction efficiency. Secondly, for LED epitaxial substrate products, mainly in improving the production method of previous epitaxial substrate materials, 'replace the heterogeneous materials with the same materials, and reduce the stress caused by the different materials, such as the Japanese company's patent publication No. 508841'. The si〇2 protective layer is formed on the surface of AhO3, and the hardness, thermal conductivity and swelling coefficient of the two are quite different, and the epitaxial crystal is easy to generate stress in a high thermal environment. The invention replaces the protective layer with a continuous quarter-into-period high-low step, creates an optimal optical phase matching environment, increases the chance of overlapping light and increases the brightness, and the 1/4λ height difference step is for the light to penetrate due to the light path distance. Not equal, but the light is advanced or the light is behind. The backward light will overlap with the advanced light to brighten. The LED insect crystal substrate fragmentation and half-cut method of the present invention is to solve the stress of the led 磊 epitaxial substrate and can improve Brightness LED epitaxial substrate products. The fragmentation cutting method is processed by means of intermittent impact cracking, so it can be changed to upgrade the traditional 2D cutting to 3D thinking cutting, wherein the tool shape is given to the 3D optical structure tool. The fragment cutting tool of the invention is selected from Qin and Steel. One of the materials, such as aluminum, is precision-machined to form the tool' and then electroformed with diamond or CBN or SiC superhard particles on the edge of the blade. The shape of the blade is complementary to the shape of the workpiece. If the cutting edge is parallel to each other, the grain section of the product after cutting is parallel to the raw sugar; if the cutting edge is parallel to each other but the surface of the cutting edge has a continuous column 16 201009913-like microstructure, the grain section of the product after cutting is parallel and columnar rough; If the two sides are sharp and non-parallel to each other, the cut grain of the product is non-parallel coarse sugar; if the cutting edge is sharp and non-parallel to each other and the surface of the cutting edge has a continuous columnar microstructure, the grain section of the product after cutting is non-parallel Columnar thick chain: If the blade is a convex continuous step, the product after cutting is a concave continuous step. A description of the tool shape design resulting in an optical construction is as follows: After cutting, the product has a rough grain section, and the rough section allows the light source to scatter, and the reflected light is not reflected back into the crystal in situ. When the continuous curved tool performs the upper and lower impact force on the vertical direction of the plane of the led wafer material, the product section will form a continuous columnar arrangement, and the product grain section forms a cylindrical lens as the simplest aspheric optical design. After the light passes through the cylindrical mirror, the divergence rate does not change, but in the non-meridian plane, the curvature is unequal, and the unequal refraction can effectively increase the critical angle to overcome the total reflection angle. It is more conducive to light extraction efficiency' and can be applied as long as it is a lenticular lens. For example, a semicircular arc, a triangle, a rectangle, etc. have excellent effects. "When cutting a LED wafer with a non-parallel sharp-shaped cutter, the sharp angle is taken. The angle greater than the angle of inclination is less than the critical angle of the material as a non-parallel tool angle, which reduces the in-situ reflection of light back into the grain and reduces the total reflection of light. The use of a 枉-type cutter with a metal end as a concave, convex stepped tapered end edge, and then coated with diamond or the like on the tapered end edge, can be used for insect crystal substrate materials such as: AL2O3, SiC, GaN, ZnS, ZnO, GaAs, Si〇2, Si, etc. are used as the plane-fragmenting and semi-machining action of the plate body, and a stray crystal substrate having a continuous concave or convex step in a period shorter than the crystal grains is formed on the surface thereof. The concave or convex portion respectively has at least one or more concave or convex layers; the concave or convex step may be 17 201009913 plate products. :卞,: angular, rectangular, among them, the more the unit area, the smaller the product, the smaller the stress, the smaller the stress, the more the crystal lattice level can help the overlapping probability of light, the light of *? The square-brightening effect of the string, that is, the LED fragmentation cutting method capable of producing the brightening effect of the LED insect crystal base, is to be injected into the liquid cold liquid, and flows into the power source of the machine to cool the power source due to the displacement piston The m produced by the movement drops to the crystal by the cutter

The wafer f is mounted on the wafer holder. At the same time, the coolant serves as a sound wave reflection preventing layer between the cutting tool and the cut LED chip or the LED epitaxial substrate material, and the cut waste is taken away as a cleaning medium. . Ο

The LED chip cutting method of the invention and the LED die product produced by the chipping and cutting have a surface formed with a rough surface corresponding to the particle diameter attached to the cutter blade; and the cut into the outer side shape includes the tool The parallel or non-parallel planar shape of the blade surface shape or the concavo-convex shape continuously arranged by a triangle, a rectangle or an arc column can expand the light reflection angle of the Li:D crystal grain and prevent the light from being reflected back in situ. Optical properties in the grain and aspherical surface to improve light extraction efficiency. LED and the above-mentioned LED fragmentation and half-cutting method of the present invention is used for the LED epitaxial nucleus plane of the LED epitaxial nucleus plane with a wavelength of 1/4 and an odd multiple step difference. Most or convex levels, each level has an odd multiple of LE: D illuminating wavelength ι / 4 λ & thickness difference, which enables 1/4 λ of the unit colloidal parallel light on a LED epitaxial substrate The time difference, so that these advanced $ light will be superimposed with the later light forming light, which will help the light phase weight 18 201009913 and once again increase the brightness of the LED. The present invention has the following effects: (1) Cutting of an LED wafer, in the same one-time cutting process, the light-emitting diode crystal grains having optical characteristics can be simultaneously imparted to help the light-emitting efficiency thereof. (2) The method of chipping and cutting the LED chip changes the processing direction, and is lifted by the 2D friction cutting to the 3D upper and lower fragmentation cutting direction, giving the LED crystal 3D optical structure, reducing the ❻ of the light and reflecting it back into the grain. Reduce the thermal damage of the LED die and increase its light extraction efficiency. (3) A method of chipping a semi-cut LED stray substrate provides an epitaxial substrate having a 3D optical structure, which helps to create a superimposed environment with less stress and to form a light, thereby helping the LED light-emitting efficiency to be improved. [Embodiment] The chip cutting method of the LED of the present invention mainly applies the force of the upper and lower piston movements of the electric drive magnetostrictive or piezoelectric ceramic material to generate volume expansion or compression (that is, electric energy can be converted into mechanical energy). As a power source for chipping LE: 1) wafer or fragmented half-cut LED epitaxial substrate; electroformed with a suitable shape of a diamond or cBN or siC particle at one end as a tool for processing; Preventing the use of a liquid medium as a sound wave reflection preventing layer between the tool and the wafer; a wafer holder as a device for breaking a LE:D wafer or a LED epitaxial substrate, as described in the first embodiment Completed LED chipping method and its products. The first embodiment is explained as follows: The power source 14 is electrically driven magnetostrictive material 19 201009913

Cr(20)Al(3)Fe alloy; sound wave prevents medium from using pure water 13; knife

The cutting edge of Fig. 2 is 21, 22, 23, 24; the workpiece is the LED wafer 11 and placed on the wafer holder, and is carried out according to the following procedure according to the following procedure. The examples are intended to illustrate the invention and are not intended to limit the scope of the invention. A. First, a UD wafer 11 fixture is placed on the wafer holder 12 for use. B. Next, the sound wave prevention medium pure water 13 is activated, flowing from top to bottom. , ❹ flows through the tool 丨 5 and the wafer holder 12 as a sound wave prevention medium and coolant between the tool and the wafer and removes waste. c. Secondly, the magnetostrictive material Cr(20) A1(3)Fe alloy power source 14 is activated, and the impact force of the up and down displacement piston is generated. D. Continuously intermittently driving the ultra-fine particles on the surface of the tool into the LEJ) wafer to perform the chipping of the light-emitting diode chip 15. After the cutting is completed, the power source 14 and the sound wave preventing medium pure water 13 are turned off, and the chipping can be taken out. The cut LED dies are classified as product grains by QC screening. ί The LED chipping and cutting method of the present invention is completed in four steps of A, B, C, and D. The grain section of the product after cutting is rough, which is characterized by a cross-sectional shape of the LED die product complementary to the shape of the blade surface. Two features. For example, the blade 21 produces a rough parallel parallel led die 41; the blade 22 produces a cross-sectionally rough non-parallel LED die 42; the blade 23 produces a cross-sectionally rough non-parallel LED die 44; the blade 24 produces a cross-sectionally rough non-parallel LED crystal Grain 43 (as indicated by the sixth circle). The product of the present invention is preferably a non-parallel LE:D grain with a rough section, which can expand to overcome the total reflection and overcome the reflection of the reflected light back into the grain, and the second best is a cross-section parallel LE:D grain product. 201009913 The second embodiment is explained as follows: As described in the first figure, the step is to say that 'the power source 14 is to drive the ρζτ piezoelectric material by electric power; the sound wave prevents the medium from adding alcohol to the water (anti-icing); the tool takes the blade of the fourth figure as 28, 29'3. ==; LE: D wafer 11 is placed on the wafer holder. The operation flow is the same as the above-mentioned embodiment, the fragmentation cutting method ’ manufactures a led die. Ο

A. First, an LED wafer 11 is fixed on the wafer holder 12 for use. B. Next, the sound wave prevention medium pure water 13 is started, flows from the upper side, and then flows through the cutter 15 and the wafer holder 12, and serves as a sound wave prevention medium and a coolant between the wafer and the wafer, and removes waste. C. Secondly, the PZT piezoelectric material power source u is driven by electric power to generate the impact force of the upper and lower displacement pistons. D. Continuously intermittently driving the ultrafine particles on the surface of the tool into the LE]) The wafer is subjected to chipping and cutting of the LED chip. 15' After the cutting is completed, the power source 14 and the power source for the sound wave preventing medium 13 are turned off, and the chipping and cutting are completed. LED dies are classified as product grains by QC screening. The LEI) fragmentation cutting method of the present invention is completed in four steps of A, B, C, and D, wherein the grain section of the product after cutting is rough as its first characteristic, and the cross-sectional shape of the LED crystal product complementary to the surface irregular shape of the blade is Sign. For example, the blade 28 produces a section _ non-parallel rectangular column _ ^ grain =: blade 29 produces a section of coarse wheel non-parallel triangular pyramidal grain 'knife 77 30 production section coarse wheel non-parallel arc columnar LED die 50 (as shown in Figure 8). The product is the best non-parallel (10) grain of coarse sugar in the city. It can expand the total reflection and overcome the reflection of the reflected light back into the grain. 201009913 is the best non-parallel cone-shaped LED die. The third embodiment is explained as follows: The operation procedure as described in the first embodiment is the same as the above-described solid fracture cutting method to produce an LED die product. The third figure is 25, 26, 27; four steps of A, B, C, D into LED broken (four) financial method. Fine-duty product = rough as its first feature, the cross-cut = grain product complementary to the surface of the blade is its second feature. Such as the blade 25 φ ❹ ❹ triangle columnar LED die 46; knife face ^ sugar parallel _ skin 丨 77 ml yield section rough parallel arc columnar LED die 45, knife 27 produces a columnar LED crystal Grain 47 (as shown in Figure 7). The fourth embodiment of the Mei Shi office rectangle is as follows: As shown in the figure - the implementation step 'power source i Li_3; l material; sound wave prevention read: ^ force drive stop knot ice wide tool to take the third round knife media / for: m defense The LED wafer 11 is placed on the wafer holder. Cheng Na and the above-mentioned chip cutting to produce LED die products are processed by A, B, C, and three steps, and (Da) step 1 $ is also immediately Fragmentation and half-cutting of the stop processing = the surface of the LED chip that has been recently cracked and cut to a high thickness = a: E: taken, cracked by thermal shock... into a grain product. For example, a wafer 11 is fixed on the wafer holder 12, and then the sound wave is activated to prevent the alcohol from flowing, and then flows through the cutter 15 and the wafer holder 12, which is 22, 201009913, and the inter-wafer acoustic wave prevention medium and coolant Remove waste. C. Secondly, the LiNbCh piezoelectric material power source 14 is electrically driven to generate an impact force of the upper and lower displacement pistons.

Da· continuously and intermittently hits the ultra-fine particles on the surface of the tool into the wafer, and breaks and cuts the LED chip 15 only until the thickness of the wafer is not damaged. The thickness of the wafer is stopped immediately, and the power source 14 is turned off after the cutting is completed. The sound wave prevents the medium from being powered by 13. E. The fragmented and half-cut LED wafer 11 is taken out and heated by a high temperature gradient heating furnace, so that the wafer is cracked into a grain product by thermal shock, and is classified into a product grain by QC screening. Through the five steps of A, B, C, Da, and E described above, the LED chipping and half-cutting method of the present invention has a grain section of the product after cutting, and the cross-sectional shape of the blade die is complementary. For its second feature, the LED die product with residual shredded burrs is its third feature. For example, if the blade 21 produces a cross section of raw sugar parallel to the LED die 51, the blade 22 produces a cross-section of a non-parallel LE]) die 52; the blade 29 produces a cross-sectionally rough tapered non-parallel LED die 53 (as shown in the ninth column) ). The best is a non-parallel LED die with a rough cross section, which can expand the total reflection and overcome the reflection of the reflected light back into the grain, and the second best is a parallel columnar parallel die product. The fifth embodiment is as follows: as shown in the first figure, the implementation step 'the device power source 14 drives the PZT piezoelectric material with electric power' to prevent the medium from using pure water, and the tool set takes the fifth blade as 31, 32, 33, 34. Electroformed superhard diamonds are attached to the workpiece. The processed material is AL2〇3 as the LED epitaxial substrate. The operation procedure is the same as the above-mentioned fragmentation and cutting LED die products. First, an AL2〇3 epitaxial substrate is used. The material u fixture is on the epitaxial substrate holder 12 23 201009913, and then the fragmentation and half-cutting action is performed in the above manner. When the final-order and substrate level difference is reached to an odd multiple of the relative wave I 1/4 λ optical thickness, The processing is terminated; the cut-out AL2〇3 epitaxial substrate is taken out, and then chemically polished with fluoride or hydrofluoric acid, and then washed to form an LED stray crystal carrier substrate. The steps are as follows: A · Firstly The LED epitaxial substrate (丨丨) 乩 2 〇 3 fixing device is reserved on the epitaxial substrate holder 12 . B. Next, the sound wave preventing medium pure water 13 is started to flow downward from the top, and then flows through the cutters 31, 32, 33, and 34 onto the AL2〇3 epitaxial substrate and the dummy substrate fixing seat 12. c. Secondly, the electric drive Ρζτ piezoelectric material is used as the power source 14, and the upper and lower displacement piston motion impact force is generated. D a ·When the LED stray substrate a2〇3 is broken and cut, only the odd multiples of the surface of the stray substrate AL2〇3 and the nearest step ι/4λ optical thickness are not damaged, and then the processing is stopped. The action of cutting. F. Take out the LED remote crystal substrate and then perform chemical polishing with fluoride or fluoric acid. After 1717b, it is cleaned to form an lED epitaxial substrate. The LED epitaxial substrate fragmentation and half-cutting method of the present invention is completed in five steps of A, B, C, Da, and F. After the cutting, the surface of the epitaxial substrate of the product is formed to be more than one step or more convex or inner than the planar area of the body. The concave periodic continuous step LED crystal substrate is characterized by the ninth figure, such as the blade 31 producing a 52 LE:D epitaxial substrate product having a complementary surface shape; and the blade 32 producing a 54 LED epitaxial substrate product having a complementary surface shape. For example, the blade 33 produces a 51 1^1) epitaxial substrate product having a complementary surface shape; for example, the blade 34 produces a 53 LE1D bulk epitaxial substrate product having a complementary surface shape (as shown in FIG. 10). 24 201009913

The LED of the present invention is a semi-fragment cutting method for a crystal substrate, and the product [the surface of the ED epitaxial substrate is formed with a polygonal protrusion and a concave periodic step-up LED epitaxial substrate which is smaller than the planar area of the main body. For this feature, the step can be one of a hexagonal shape, a circular shape, a rectangular shape, a polygonal shape, etc., so that the surface of the finished LED epitaxial substrate is formed into a plurality of periodic rows which are smaller than the crystal grains, and are continuously convex and inner. The concave step, as shown in the ninth figure, may cause a time difference of light reflection or light penetration due to unequal thickness, so that the light has a leading or backward condition, which can help the light overlap and have a cosine square brightness enhancement effect. The best is two or more high and low steps, and the second best is more than one high and low steps. The above-mentioned names and contents of the present invention are only intended to facilitate the description of the technical scope of the present invention, and are not intended to limit the scope of the invention. Moreover, equivalent applications or component conversions and substitutions made in accordance with the spirit of the invention in this case shall be covered by the scope of this case. [Simplified description of 囷] Ο The first figure is a flow chart of the method of fragmentation cutting of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 4 is a schematic view of a parallel and non-parallel fracture cutting tool of the present invention. FIG. 4 is a schematic view of a columnar non-parallel fracture cutting tool according to the present invention. The invention has a schematic diagram of a convex and concave step-breaking cutting tool. The first embodiment is a diagram of a rough section of a led section produced by the present invention. The seventh drawing is a schematic view of a continuous columnar crystal grain product produced by the present invention. The eighth figure is a non-flat (four) plane continuous columnar thick chain made by the invention. 25 201009913 The grain product is not intended. The ninth drawing is a schematic view of an LED die made by the fragmentation and half-cutting method of the present invention. The tenth figure is not intended to be a continuous periodic concave and convex stepped LED epitaxial substrate produced by the present invention. [Explanation of main component symbols] 11 ......... LED wafer or insect crystal substrate. 12 .... wafer or epitaxial substrate holder. Ο

13 ......... Sound waves prevent liquid media. 14 ......... power source. 15 ......... broken and cut. 15a.........breaking half cut. 16 .........LED die finished. 16a.........The hot-splitting LED die is finished. 17a......... Thermal cracking. 17b.........chemical polishing. 18.........LED stray crystal substrate. 21 ......... The blade has parallel cutters on both sides. 22 ......... sharp and non-parallel cutters. 23 ......... sharply concave concave arc non-parallel cutter. 24 ......... sharply convex arc non-parallel cutter. 25 ......... The blade has a parallel triangular column cutter on both sides. 26 .........The parallel curved cylindrical cutter on both sides of the blade. 27 .........The parallel rectangular cylindrical cutter on both sides of the blade. 28 ......... sharp and non-parallel continuous curved cylindrical cutter. 29 ......... sharp-edged, non-parallel continuous rectangular cylindrical tool. 30 ......... sharp and non-parallel continuous triangular pyramid cutter. 26 201009913 31 .........The end face of the blade is continuously concave with a hexagonal step tool. 32 ......... The end face of the knife is a continuous concave circular step tool. 33 ......... The end face of the blade is a continuous convex hex step tool. 34 ......... The end face of the blade is a continuous convex circular step tool. 41 .........roughly parallel parallel LED dies. 42 .........roughly non-parallel LED dies. 43 ......... Rough and non-parallel concave curved cylindrical LED dies. 44 ......... Rough, non-parallel, convexly curved cylindrical LED dies. 45 ......... Rough and parallel curved cylindrical LED dies. ® 46.........roughly parallel triangular prismatic LED dies. 47 .........roughly parallel rectangular cylindrical LED dies. 48 .........roughly non-parallel triangular pyramidal LED dies. 49 ......... Rough non-parallel rectangular columnar LED dies. 50 ......... Rough cross-section non-parallel triangular columnar LED dies. 51 .........The cross section is rough and parallel to the broken edge LED dies. 52 ......... Rough cross-section non-parallel broken burr LED dies.

53 ......... Rough cross-section non-parallel triangular pyramidal chipping flashing LED dies. ❹ 54......... Schematic diagram of a continuous concave hexagonal stepped epitaxial substrate. 55 ......... Schematic diagram of a continuous convex hexadecimal epitaxial substrate. 56 ......... A schematic diagram of a concave circular stepped epitaxial substrate. 57 .... Schematic diagram of a continuous convex circular stepped epitaxial substrate. 27

Claims (1)

201009913 X. Patent application group ·· ❹ ❹ 1 曰, ΓϋΕΙ ΓϋΕΙ) Fragmentation cutting method, including the following steps: AW LED ΐ0 = fixed in the wafer holder; B starts the liquid material flowing through the cutter and 3 ϋ as the sound reflection layer medium ; C turn on the power supply to drive the magnetic you: or the piezoelectric ceramic material to produce volume expansion and shrinkage of the up and down f piston movement; D make one end surface electroformed with diamond or cBN or SiC ^ grain ^ cutting tool, the particles will be Continuous intermittent driving into the LED crystal = upper 'playing a smaller impact area to produce a large impact force by the above four steps to complete the LED fragmentation cutting method. According to the application of the patent scope of the first item of the LED fragmentation step c, the magnetostrictive or electroceramic material is converted into mechanical energy, resulting in volume expansion and compression of the upper and lower displacement of the live motion 'as LED The power source for the fragmentation cutting method. According to the invention, the invention relates to an LED chipping and cutting, wherein in step D, the chip cutting tool is made of titanium steel, aluminum, Ϊ ίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίί J casts with diamond or super hard particles such as SiC or cBN as a chip-cutting LED or LED epitaxial substrate tool. According to the LED fragmentation and cutting method described in the first or third aspect of the patent application, wherein the cross-section is parallel to the fracture cutting tool, and the columnar shape on the plane is a concave or convex column which is triangular or circular or rectangular. One of them is used as a cross-section parallel column-shaped fragmentation cutting LED day granule cutter. 5 cutting Λ According to the scope of claim 1 or 3 of the scope of the patent application, the knife of the fragmentation cutting tool is sharp, and the sharp angle is greater than zero than the critical value of the LED grain material 5==, the tool' In order to be a fractured cutting surface, the cutting edge is not flat. According to the i or 3 of the patent application scope, the cutting edge of the LED cutter is a concave curved shape or a convex curved sharp shape 28 201009913 cutter. 7 non-roots flats According to the application, please refer to paragraph 1 or 3 of the scope of interest, in which cut Λΐίϊ sharp broken cut #ued cutter, cut led granule cutter in its sharp plane ΐ. 'As a cross-section non-parallel columnar fragmentation 8 method root V-crack range Item 1 of the above-mentioned LED fragmentation cutting ❹ ❹ cleavage and cutting f square; t Scope range 1 or 8 - species (10) broken A chip die product made by chipping and cutting, whose characteristic rough surface is equivalent to the i-diameter shape, corresponds to two parallel LED die products 0 =, according to the scope of claim 1 or 8 An [ED fragmentation cutting method, an LED die product made by chipping and cutting is characterized by a rough surface having a section corresponding to the particle size shape of the cutter blade surface and corresponding to the two sections being parallel to each other and having continuous irregularities Columnar LED die products. 11. An LED chip product produced by chipping and cutting according to the LED chipping and cutting method according to item i or item 8 of the patent application scope, characterized in that the surface of the blade surface of the cross-section and the sharp-shaped tool has a relatively coarse particle shape. The surface 'its corresponding two sections are non-parallel LED die products. 12. The LED die product produced by the fragmentation and cutting method of an LED chipping and cutting method according to claim 1 or claim 8, wherein the cross-section and the blade surface of the cutter are substantially rough in particle size shape. The cross section forms a concave or convex curved columnar led grain product in a non-parallel section. 13. A die product made of a fragmentation cut according to the invention of claim 1 or 8 of the patent application, characterized in that it is corresponding to the particle size shape of the blade surface of the sharp sharp tool. A cross-section non-parallel cylindrical LED die product having two cross-sections that are non-parallel and have continuous irregularities. According to the first or the eighth paragraph of the patent scope, the characteristics of the led die produced by the fragmentation and chipping are as follows: the surface of the blade of the Xing if tool is quite rough and the corresponding two sections It is a non-parallel and has a continuous concave, convex-conical 'section non-parallel pyramidal LED die product. Ο The LED chipping and half-cutting method comprises the following steps a: fixing the germanium wafer to the wafer holder. B initiates the flow of the liquid material through the knife and the wafer to prevent the sound wave reflection layer medium. C Turn on the power supply to drive the magnetostrictive or piezoelectric ceramic material to produce volume expansion and compression of the upper and lower position, piston movement. Da cuts the cutting tool with diamond or CBN or SiC particles on one end to perform the chipping of the particles into the LED wafer workpiece, and the processing is stopped without damage to the surface of the wafer holder. E The half-cut LED wafer is thermally cracked to form an LED die. The LED fragmentation and half-cutting method is completed by the above five steps. 16. An LED chipping half according to the fifteenth aspect of the patent application, wherein the cutting method is characterized in that the cross section forms a rough surface having a particle size corresponding to the particle size attached to the blade, and a cross section complementary to the shape of the blade surface and remains. An irregular cross-section of a led die product formed by thermal cracking. W. A method for fragmentation and half-cutting of an LED epitaxial substrate, comprising the steps of: fixing the LED wafer to the wafer holder, and starting the liquid material to flow between the cutter and the wafer to prevent the sound wave reflection layer medium. C Turn on the power supply to drive the magnetostrictive or piezoelectric ceramic material to produce volume expansion and compression. The upper and lower displacement piston movements will have a concave or convex periodic continuous stepped blade' electroformed with meteorites on its stepped plane. 30 201009913 Or a tool for SiC or cBN particles' to perform a fragmentation of a particle into a LED epitaxial substrate. F The semi-cut lED epitaxial substrate is subjected to chemical polishing such as fluoride or hydrofluoric acid to form an LED epitaxial substrate. The LED epitaxial substrate fragmentation and half-cutting method is completed by the above five steps. 18. According to claim 17, the lED epitaxial substrate fragmentation and half-cutting method, wherein the process D fragmentation tool is a concave or convex continuous step, and each step height difference is 1/4 of the relative wavelength of the LED. The λ optical thickness is an odd multiple, and the diamond or SiC or cBN superhard particles are electroformed on the stepped plane to be used as a tool for chipping the LED epitaxial substrate. 19. The method of fragmentation and half-cutting of an LED epitaxial substrate according to claim 17 or claim 18, wherein the fragmentation tool is a concave or convex continuous step type cutter, which is a hexagonal step or a circular step or rectangle. One of the steps is a fragmented half-cut LED epitaxial substrate cutter 20, the LED epitaxial substrate fragmentation and half-cut method according to the patent application scope item I, fragmentation and half-cut processing AL2〇3, SiC , GaN, MgAlA, ZnS, ZnO, GaAs, Si〇2, Si, one of the LED epitaxial substrates, ϋ characterized in that the planar plane of the substrate is complementary to the shape of the end face of the tool, and a concave or convex periodic one or more stepped substrates are successively formed. A step height and low distance is 1/4 λ optical thickness odd multiple difference 'as a substrate for LED epitaxy. 21. The LED epitaxial substrate chipping and semi-cutting method according to claim 17 or claim 20, wherein the staggered substrate is a concave and convex periodic continuous stepped hexagon. a staggered, concave or convex periodic continuous stepped circular step, or a concave, convex periodic continuous stepped rectangular step of a stray crystal substrate, as an LED raw material _νι such as gallium nitride, nitride A led remote crystal substrate of one of indium gallium and aluminum gallium nitride. 31