TW201006949A - Power source device - Google Patents

Power source device

Info

Publication number
TW201006949A
TW201006949A TW098120658A TW98120658A TW201006949A TW 201006949 A TW201006949 A TW 201006949A TW 098120658 A TW098120658 A TW 098120658A TW 98120658 A TW98120658 A TW 98120658A TW 201006949 A TW201006949 A TW 201006949A
Authority
TW
Taiwan
Prior art keywords
power source
discharge circuit
source device
targets
potentials
Prior art date
Application number
TW098120658A
Other languages
English (en)
Other versions
TWI500799B (zh
Inventor
Shinobu Matsubara
Yoshikuni Horishita
Hidenori Yoda
Yoshio Yanagiya
Takeo Toda
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of TW201006949A publication Critical patent/TW201006949A/zh
Application granted granted Critical
Publication of TWI500799B publication Critical patent/TWI500799B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H03H7/40—Automatic matching of load impedance to source impedance
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Inverter Devices (AREA)
TW098120658A 2008-06-30 2009-06-19 Power supply TWI500799B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008170806A JP5429772B2 (ja) 2008-06-30 2008-06-30 電源装置

Publications (2)

Publication Number Publication Date
TW201006949A true TW201006949A (en) 2010-02-16
TWI500799B TWI500799B (zh) 2015-09-21

Family

ID=41465824

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098120658A TWI500799B (zh) 2008-06-30 2009-06-19 Power supply

Country Status (6)

Country Link
US (1) US9210788B2 (zh)
JP (1) JP5429772B2 (zh)
KR (1) KR101298167B1 (zh)
CN (1) CN102084024B (zh)
TW (1) TWI500799B (zh)
WO (1) WO2010001723A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI673752B (zh) * 2014-05-12 2019-10-01 南韓商三星電子股份有限公司 電漿裝置

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5922218B2 (ja) * 2012-02-20 2016-05-24 東京エレクトロン株式会社 電源システム及びプラズマ処理装置
DE102012021346A1 (de) 2012-11-01 2014-08-28 Oerlikon Trading Ag, Trübbach Leistungsverteiler zur definierten sequenziellen Leistungsverteilung
DE102016012460A1 (de) * 2016-10-19 2018-04-19 Grenzebach Maschinenbau Gmbh Vorrichtung und Verfahren zur Herstellung definierter Eigenschaften von Gradientenschichten in einem System mehrlagiger Beschichtungen bei Sputter - Anlagen
US10510575B2 (en) * 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
WO2020154310A1 (en) 2019-01-22 2020-07-30 Applied Materials, Inc. Feedback loop for controlling a pulsed voltage waveform
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
CN109811324B (zh) * 2019-03-14 2021-02-09 哈尔滨工业大学 基于异质双靶高功率脉冲磁控溅射制备掺杂类薄膜的装置及方法
TWI692921B (zh) * 2019-06-26 2020-05-01 台達電子工業股份有限公司 電源供應電路與操作方法
US11462389B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Pulsed-voltage hardware assembly for use in a plasma processing system
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US20220399185A1 (en) 2021-06-09 2022-12-15 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4597847A (en) * 1984-10-09 1986-07-01 Iodep, Inc. Non-magnetic sputtering target
JPH02243762A (ja) * 1989-03-17 1990-09-27 Hitachi Ltd スパッタ装置
DE4042289A1 (de) * 1990-12-31 1992-07-02 Leybold Ag Verfahren und vorrichtung zum reaktiven beschichten eines substrats
DE9109503U1 (de) 1991-07-31 1991-10-17 Magtron Magneto Elektronische Geraete Gmbh, 7583 Ottersweier Schaltungsanordnung für ein Stromversorgungsgerät für Geräte und Anlagen der Plasma- und Oberflächentechnik
DE4233720C2 (de) * 1992-10-07 2001-05-17 Leybold Ag Einrichtung für die Verhinderung von Überschlägen in Vakuum-Zerstäubungsanlagen
US5681860A (en) * 1993-09-21 1997-10-28 The Trustees Of Columbia University In The City Of New York Method of increasing expression of HLA, cell surface and TAA antigens of cells using 3-(N-acetylamino)-5-(N-decyl-N-methylamino)-benzyl alcohol
DE4446532A1 (de) * 1994-12-24 1996-06-27 Bosch Gmbh Robert Stromversorgungsschaltung
US5584972A (en) * 1995-02-01 1996-12-17 Sony Corporation Plasma noise and arcing suppressor apparatus and method for sputter deposition
JPH10152772A (ja) * 1996-11-22 1998-06-09 Matsushita Electric Ind Co Ltd スパッタリング方法及び装置
DE19651811B4 (de) * 1996-12-13 2006-08-31 Unaxis Deutschland Holding Gmbh Vorrichtung zum Belegen eines Substrats mit dünnen Schichten
JPH11146659A (ja) * 1997-11-05 1999-05-28 Haiden Kenkyusho:Kk 正負パルス式スイッチング電源装置
DE10018879B4 (de) * 2000-04-17 2013-02-28 Melec Gmbh Stromversorgungsgerät zur bipolaren Stromversorgung
KR20040002796A (ko) * 2002-06-28 2004-01-07 후지 샤신 필름 가부시기가이샤 편광판 점착방법 및 그 장치
JP2005133110A (ja) 2003-10-28 2005-05-26 Konica Minolta Opto Inc スパッタリング装置
JP4780972B2 (ja) 2004-03-11 2011-09-28 株式会社アルバック スパッタリング装置
JP4650315B2 (ja) * 2005-03-25 2011-03-16 株式会社ブリヂストン Ｉｎ−Ｇａ−Ｚｎ−Ｏ膜の成膜方法
JP4775948B2 (ja) * 2005-11-17 2011-09-21 日東電工株式会社 光学表示装置の製造システム及びその製造方法
JP5016819B2 (ja) * 2006-01-11 2012-09-05 株式会社アルバック スパッタリング方法及びスパッタリング装置
JP4320019B2 (ja) * 2006-01-11 2009-08-26 株式会社アルバック スパッタリング装置
JP2008138263A (ja) * 2006-12-04 2008-06-19 Toppan Printing Co Ltd ロール・ツー・ロール型のマグネトロン・スパッタ装置、積層体、光学機能性フィルタ、及び光学表示装置
EP2102889B1 (en) * 2006-12-12 2020-10-07 Evatec AG Rf substrate bias with high power impulse magnetron sputtering (hipims)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI673752B (zh) * 2014-05-12 2019-10-01 南韓商三星電子股份有限公司 電漿裝置

Also Published As

Publication number Publication date
JP2010007161A (ja) 2010-01-14
US9210788B2 (en) 2015-12-08
CN102084024A (zh) 2011-06-01
US20110100807A1 (en) 2011-05-05
WO2010001723A1 (ja) 2010-01-07
JP5429772B2 (ja) 2014-02-26
KR101298167B1 (ko) 2013-08-21
KR20110025229A (ko) 2011-03-09
TWI500799B (zh) 2015-09-21
CN102084024B (zh) 2013-04-17

Similar Documents

Publication Publication Date Title
TW201006949A (en) Power source device
WO2012058123A3 (en) Electro-optic device with gap-coupled electrode
WO2016064237A3 (ko) 터치 입력 장치
WO2010036713A3 (en) Capacitive sensor having electrodes arranged on the substrate and the flex circuit
WO2010094002A3 (en) Rf bus and rf return bus for plasma chamber electrode
NZ772089A (en) Matrix metalloprotease-cleavable and serine protease cleavable substrates and methods of use thereof
WO2008133710A3 (en) Plasma panel based radiation detector
WO2013134026A3 (en) Envelope tracking power amplifier system with delay calibration
WO2009065039A3 (en) Methods and apparatus for sputtering deposition using direct current
IN2014CN03520A (zh)
BR112012021172A2 (pt) revestimento de polímero polímerizado de plasma
WO2010117970A3 (en) Multifrequency capacitively coupled plasma etch chamber
WO2016064860A3 (en) Composition for forming a patterned metal film on a substrate
EP3707757A4 (en) POWER AND RF DEVICES IMPLEMENTED USING A WORKED SUBSTRATE STRUCTURE
WO2019059630A3 (ko) 접착제 조성물 및 이를 이용하여 형성된 접착제층을 포함하는 편광판
WO2007044248A3 (en) Low-voltage inductively coupled source for plasma processing
WO2011086368A3 (en) Liquid repellent surfaces
WO2013192258A8 (en) Electrode formulations comprising graphenes
PH12016501783B1 (en) Electroactive optical device
MX2015008261A (es) Dispositivo de bombardeo de iones y metodo para usar el mismo para limpiar una superficie de sustrato.
WO2013093036A3 (en) Pulse generator
WO2016168861A3 (en) Radio frequency power sensor having a non-directional coupler
MX2014009071A (es) Pelicula delgada de ito y aparato terminal.
GB201207670D0 (en) Finding bias voltages for optical modulators
WO2005074574A3 (en) Parallel plate electron multiplier with ion feedback suppression