200952211 九、發明說明： - 【發明所屬之技術領域】 本發明涉及一種發光二極體之製造方法。 【先前技術】 發光二極體（Light Emitting Diode, LED)具有環保、 亮度高、省電、壽命長等諸多特點，漸漸成為主要照明光 © 源。業内通常將發光二極體晶圓切割成發光二極體晶粒， 然後再將發光二極體晶粒逐一安裝於基座内，從而完成發 光二極體之封裝。然，該製造方法取放發光二極體晶粒之 動作為序列式，須逐個取放發光二極體晶粒，限制發光二 極體之封裝速度。 【發明内容】 鑒於此’有必要提供一種封裝速度較高之發光二極體 β 製造方法。 一種發光二極體製造方法，包括以下步驟：提供一發 光二極體晶圓及-第-粘著層’其中該發光二極體晶圓包 括正面及背面，將發光二極體晶圓之背面固定於第一粘著 層上；把發光二極體晶圓切割形成複數發光二極體晶粒， 八中每發光一極體晶粒包括正面及背面，每一發光二極 _之背面固定於第一刚上；提供一第二枯著層， 將第一枯著層平貼于所有發光二極體晶粒之正面 ，使該複 1發光-極體晶粒固定於第二枯著層上；將該複數發光二 6 200952211 極體晶粒與第一粘著層分離；提供一基座，將第二枯著層 平貼於基座上’其中該基座上開設有複數凹座，該複數凹 座與該複數發光二極體晶粒一一對應，每一發光二極體晶 粒與其相對應之凹座相對；將該複數發光二極體晶粒與第 二粘著層分離’使每一發光二極體晶粒分別落入與其對應 之凹座内；把該複數發光二極體晶粒固定于與其相對應之 凹座内，利用導線把每一發光二極體晶粒電連接於基座 ❹200952211 IX. Description of the Invention: - Technical Field of the Invention The present invention relates to a method of manufacturing a light-emitting diode. [Prior Art] Light Emitting Diode (LED) has many characteristics such as environmental protection, high brightness, power saving, long life, etc., and gradually becomes the main illumination light © source. In the industry, a light-emitting diode wafer is usually cut into a light-emitting diode die, and then the light-emitting diode die is mounted one by one in the susceptor to complete the package of the light-emitting diode. However, in the manufacturing method, the movement of the light-emitting diode crystal grains is taken as a sequence, and the light-emitting diode crystal grains are taken and removed one by one to limit the packaging speed of the light-emitting diode. SUMMARY OF THE INVENTION In view of the above, it is necessary to provide a method of manufacturing a light-emitting diode β having a high package speed. A method for manufacturing a light-emitting diode includes the steps of: providing a light-emitting diode wafer and a first-adhesive layer, wherein the light-emitting diode wafer includes a front surface and a back surface, and the back surface of the light-emitting diode wafer Fixing on the first adhesive layer; cutting the light-emitting diode wafer to form a plurality of light-emitting diode crystal grains, and each of the light-emitting one-pole crystal grains includes a front surface and a back surface, and each of the light-emitting diodes is fixed on the back surface thereof First, a second dry layer is provided, and the first dry layer is flatly attached to the front surface of all the light-emitting diode grains, so that the composite light-polar body grain is fixed on the second dry layer Separating the plurality of illuminating electrodes 6 200952211 from the first adhesive layer; providing a pedestal for affixing the second wicked layer to the pedestal; wherein the pedestal is provided with a plurality of recesses, a plurality of recesses are in one-to-one correspondence with the plurality of light-emitting diode crystal grains, each of the light-emitting diode crystal grains is opposite to the corresponding recess; and separating the plurality of light-emitting diode crystal grains from the second adhesive layer Each of the light-emitting diode crystal grains falls into a corresponding recess; respectively; The photodiode die is fixed in the corresponding recess, and each of the light emitting diode die is electrically connected to the pedestal by a wire.
上，並向基座之凹座内填充透光材料，該透光材料分別包 覆每一發光二極體晶粒。 與習知技術相比較，本發明之發光二極體製造方法中 取放發光二極體晶粒動作採用平行方式，即把複數發光二 極體晶粒-體组裝於基座中，無須逐—將發光二極體晶粒 置入基座中，提高了組裝速度。 【實施方式】 如圖1所示，本發明之發光二極體製造方法包括以下 如圖2所示，提供—發光二極體晶圓1及-第 化鎵、磷珅化鎵、坤:=:半導體’外延層之材料可為碎 發光二極_ ；1彳=4=之材料可為藍寶石等。 先一極體晶圓1之背® 12枯貼固定於第 200952211 一粘著層2上。第一粘著層2可選用熱分離膠帶或紫外線 膠帶，其中紫外線膠帶可藉由照射紫外線方式失去粘性， 熱分離膠帶則藉由加熱方式失去粘性。 其次，如圖3所示，形成複數發光二極體晶粒3，即把 發光二極體晶圓1切割成複數發光二極體晶粒3,每一發光 二極體晶粒3包括正面31及背面32,該複數發光二極體晶 粒3之背面32仍固定於第一粘著層2上。切割方式可採用 輪刀式、鑽石式及鐳射等方法。 再次，如圖4所示，即提供一第二粘著層4,將該複數 發光二極體晶粒3 —體粘貼固定於第二粘著層4上，該第 二粘著層4與第一粘著層2相同，可為熱分離膠帶或紫外 線膠帶，將第二粘著層4平貼于所有發光二極體晶粒3之 正面31，第二粘著層4與第一粘著層2相對設置，發光二 極體晶粒3連接於第一粘著層2與第二粘著層4之間。 然後，如圖5所示，將發光二極體晶粒3與第一粘著 層2分離，使發光二極體晶粒3僅藉由正面31粘著在第二 粘著層4上。當第一粘著層2為熱分離膠帶時，可藉由加 熱第一粘著層2之方式，使得第一粘著層2失去粘性，從 而發光二極體晶粒3與第一粘著層2分離。當第一粘著層2 為紫外線膠帶時，可藉由紫外線照射第一粘著層2之方式， 使得第一粘著層2失去粘性，從而發光二極體晶粒3與第 一粘著層2分離。 接著，如圖6所示，提供一基座5，將第二粘著層4 平貼於基座5上，該基座5間隔開設有複數杯狀凹座51， 200952211 該複數杯狀凹座51與該複數發光二極體晶粒3 一一對應， 每一發光二極體晶粒3與其相對應之杯狀凹座51相對設 置，發光二極體晶粒3之背面32朝向杯狀凹座51。杯狀凹 座51之深度大於發光二極體晶粒3之厚度。每—杯狀凹座 51之底部還可設有結合材料6 ’如鄉等雜材料，用於 在後續之落晶步驟中將發光二極體晶粒3初步固定於杯狀 凹座51内。 ❹ 接下來落晶，如圖7所示，即發光二極體晶粒3與第 二枯著層4分離’此分離方法與發光二極體晶粒3與第-^著層2分離之方法相同。該複數發光二極體晶粒3分別 落入與其對應之杯狀凹座51内，由於結合材料6具有枯 性，可將發光二極體晶粒3之背面32初步固定於杯狀凹座 51内。該複數發光二極體絲3 —體式崎於基座$内， 無須將發光二極體晶粒3逐-組裝於基座5内，提高發光 -極體之組裝速度H骑層4採用熱分離膠帶，在 Ο 絲第二枯著層4步驟之前，可在第二枯著層4上設置一 均溫板（圖中未示出），加熱時熱量藉由均溫板均勻地傳遞 到第二钻著層4上，避免第二_層4受熱不均，從而綠 保發光二極體晶粒3同時從第二粘著層4上脫落。 緊接著固晶、打線及密封，其中固晶係把該複數發光 二極體晶粒3固定于與其相對應之杯狀凹座51内。固晶可 採用焊接等方式。如圖8所示，打線為利用導線7把每-發光二極體晶粒3電連接於基座5之電極52上。導線7可 採用金線或紹線等導電材料。密封為向基座5之杯狀凹座 9 200952211 51内填充透光材料8，該透光材料8分別包覆每一發光二 極體晶粒3 ’使發光二極體晶粒3與外界嶋，該透光材料 8還可作為透似提高出光率。透光材料8可採用環氧樹 月旨、壓克力、祕等高透光、高機械強度、強耐濕性材料， =光材料8中還可參雜螢光粉。密封時可採賴具一體式 /瞿膠密封，適合大批量生產。 ΟAnd filling the recess of the pedestal with a light transmissive material, each of which covers each of the illuminating diode dies. Compared with the prior art, in the method for manufacturing a light-emitting diode of the present invention, the operation of picking up and emitting the light-emitting diode crystal grains is performed in a parallel manner, that is, assembling the plurality of light-emitting diode crystal grains into the susceptor without - Place the light-emitting diode die in the pedestal to increase the assembly speed. [Embodiment] As shown in FIG. 1, the method for manufacturing a light-emitting diode of the present invention includes the following: as shown in FIG. 2, a light-emitting diode wafer 1 and a gallium, a gallium germanium, a Kun:= The material of the semiconductor 'epitaxial layer may be a broken light emitting diode _; 1 彳 = 4 = the material may be sapphire or the like. The back of the first polar wafer 1 is attached to the adhesive layer 2 of 200952211. The first adhesive layer 2 may be selected from a thermal separation tape or an ultraviolet tape, wherein the ultraviolet tape may lose its viscosity by irradiating ultraviolet rays, and the thermal separation tape loses viscosity by heating. Next, as shown in FIG. 3, a plurality of light-emitting diode crystal grains 3 are formed, that is, the light-emitting diode wafer 1 is cut into a plurality of light-emitting diode crystal grains 3, and each of the light-emitting diode crystal grains 3 includes a front surface 31. And the back surface 32, the back surface 32 of the plurality of LED dipoles 3 is still fixed on the first adhesive layer 2. Cutting methods such as wheel cutter, diamond and laser can be used. Again, as shown in FIG. 4, a second adhesive layer 4 is provided, and the plurality of light-emitting diode crystal grains are bonded and fixed on the second adhesive layer 4, and the second adhesive layer 4 and the second adhesive layer 4 The same adhesive layer 2 may be a thermal separation tape or an ultraviolet tape, and the second adhesive layer 4 is flatly attached to the front surface 31 of all the light-emitting diode crystal grains 3, and the second adhesive layer 4 and the first adhesive layer In the opposite arrangement, the light-emitting diode die 3 is connected between the first adhesive layer 2 and the second adhesive layer 4. Then, as shown in Fig. 5, the light-emitting diode crystal grains 3 are separated from the first adhesive layer 2, so that the light-emitting diode crystal grains 3 are adhered only to the second adhesive layer 4 by the front surface 31. When the first adhesive layer 2 is a thermal separation tape, the first adhesive layer 2 can be deactivated by heating the first adhesive layer 2, so that the light-emitting diode die 3 and the first adhesive layer 2 separation. When the first adhesive layer 2 is an ultraviolet adhesive tape, the first adhesive layer 2 can be deactivated by ultraviolet rays to illuminate the first adhesive layer 2, so that the light-emitting diode crystal 3 and the first adhesive layer 2 separation. Next, as shown in FIG. 6, a pedestal 5 is provided, and the second adhesive layer 4 is flatly attached to the pedestal 5. The pedestal 5 is spaced apart from the plurality of cup-shaped recesses 51, 200952211. 51 is in one-to-one correspondence with the plurality of light-emitting diode crystal grains 3, and each of the light-emitting diode crystal grains 3 is disposed opposite to the corresponding cup-shaped recess 51, and the back surface 32 of the light-emitting diode crystal grain 3 faces the cup-shaped concave Block 51. The depth of the cup-shaped recess 51 is greater than the thickness of the light-emitting diode die 3. The bottom of each cup-shaped recess 51 may also be provided with a bonding material 6' such as a mixed material for preliminarily fixing the light-emitting diode die 3 in the cup recess 51 in the subsequent crystal falling step. ❹ Next, the crystal is as shown in FIG. 7, that is, the light-emitting diode crystal 3 is separated from the second dry layer 4'. The separation method and the method of separating the light-emitting diode crystal 3 from the first-layer 2 the same. The plurality of light-emitting diode crystal grains 3 respectively fall into the corresponding cup-shaped recesses 51. Since the bonding material 6 has a dryness, the back surface 32 of the light-emitting diode crystal grains 3 can be initially fixed to the cup-shaped recess 51. Inside. The plurality of light-emitting diode wires 3 are stacked in the susceptor $, and the light-emitting diode dies 3 need not be assembled in the susceptor 5, thereby improving the assembly speed of the illuminating-polar body. The riding layer 4 is thermally separated. The tape may be provided with a temperature equalizing plate (not shown) on the second dry layer 4 before the second dry layer 4 step of the wire, and the heat is evenly transferred to the second by the temperature equalizing plate during heating. On the drilled layer 4, the second layer 4 is prevented from being heated unevenly, so that the green-protected light-emitting diode die 3 is simultaneously detached from the second adhesive layer 4. Immediately after the solid crystal, wire bonding and sealing, the solid crystal system fixes the plurality of light-emitting diode crystal grains 3 in the corresponding cup-shaped recess 51. The solid crystal can be welded or the like. As shown in FIG. 8, the wire is electrically connected to the electrode 52 of the susceptor 5 by the wire 7. The wire 7 can be made of a conductive material such as a gold wire or a wire. The sealing is filled into the cup-shaped recess 9 200952211 51 of the pedestal 5 with a light-transmitting material 8 filled with a light-emitting material 8 respectively covering each of the light-emitting diode dies 3' to cause the light-emitting diode die 3 to smash with the outside The light transmissive material 8 can also improve the light extraction rate as a transparent. The light-transmitting material 8 can be made of epoxy resin, acrylic, high-viscosity, high mechanical strength, and strong moisture-resistance material, and the light material 8 can also be mixed with fluorescent powder. Sealed with integrated / silicone seal, suitable for mass production. Ο
最後切割基座5,使得基座5上之每一發光二極體晶粒 相互分離’各自成為獨立之封裝體，使每—發光二極體晶 板3形成-發光二極體9，如圖9所示。切割方式可採用輪 刀式、鑽石式及鐳射等方法。 社所述，本發明符合發明專利之要件，麦依法提出 利申》月准以上所述者僅為本發明之較佳實施例，舉凡 熟悉本案技藝之人士，在美依本發_神所作之等效修韵 或變化’皆應涵蓋於以下之申請專利範圍内。 【圖式簡單說明】 圖1為本發明發光二極體之製造方法一較佳實施例之 流程圖。 圖2為圖1所不方法中將發光二極體晶圓固定於第一 粘著層步驟之示意圖。 圖3為圖1所不方法中形成發光二極體晶粒後之示意 圖4為圖1所示方法中將該複數發光二極體晶粒固定 於第二粘著層後之示意圖。 200952211 圖5為圖1所示方法中發光二極體晶粒與第一粘著層 分離後之示意圖。 圖6為圖1所示方法中將第二粘著層平貼於基座後之 示意圖。 圖7為圖1所示方法中落晶後之剖面示意圖。 圖8為圖1所示方法中密封後之剖面示意圖。 圖9為圖1所示方法中基座被切割後所形成之發光二 極體之剖面示意圖。 ❹ 【主要元件符號說明】 發光二極體晶圓 1 正面 11、31 背面 12、 32粘著層 2、4 發光二極體晶粒 3 基座 5 杯形凹座 51 電極 52 結合材料 6 導線 7 透光材料 8 發光二極體 9 11Finally, the pedestal 5 is cut so that each of the illuminating diode dies on the pedestal 5 is separated from each other', and each becomes an independent package, so that each of the luminescent diode plates 3 forms a light-emitting diode 9, as shown in the figure. 9 is shown. The cutting method can be performed by a knife type, a diamond type or a laser method. As stated by the Society, the present invention complies with the requirements of the invention patent, and the above is only the preferred embodiment of the present invention. The person familiar with the skill of the present invention is made in the United States. Equivalent rhyme or change 'should be covered by the following patent application. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a flow chart showing a preferred embodiment of a method for fabricating a light-emitting diode according to the present invention. Fig. 2 is a schematic view showing the step of fixing the light-emitting diode wafer to the first adhesive layer in the method of Fig. 1. 3 is a schematic view showing the formation of the light-emitting diode crystal grains in the method of FIG. 1. FIG. 4 is a schematic view showing the method of fixing the plurality of light-emitting diode crystal grains to the second adhesive layer in the method shown in FIG. 200952211 FIG. 5 is a schematic view showing the light-emitting diode crystal grains separated from the first adhesive layer in the method shown in FIG. Fig. 6 is a schematic view showing the second adhesive layer flatly attached to the susceptor in the method of Fig. 1. Figure 7 is a schematic cross-sectional view of the method of Figure 1 after crystallisation. Figure 8 is a schematic cross-sectional view of the method of Figure 1 after sealing. Fig. 9 is a schematic cross-sectional view showing a light-emitting diode formed by cutting a susceptor in the method shown in Fig. 1. ❹ [Main component symbol description] LED wafer 1 front 11, 31 back 12, 32 adhesive layer 2, 4 LED die 3 pedestal 5 cup recess 51 electrode 52 bonding material 6 wire 7 Light-transmitting material 8 Light-emitting diode 9 11