200950069 六、發明說明： 【發明所屬之技術領域】 本發明係關於熱檢測感測器陣列。 【先前技術】 作為以往之熱檢測感測器陣列，例如有專利文獻丨或專 ’ 利文獻2所記載之熱檢測感測器陣列。在專利文獻lt，揭 - *有發熱體位置檢測裝置。在此裝置中，藉由逐次開閉操 Φ 作連接於各矽化鐵感測器兩端之開關，以測定各矽化鐵感 測器之電動勢，記憶所測定之電動勢。而，檢索由所記憶 之電動勢中輸出最大電動勢之石夕化鐵感測器，以決定紅外 線入射位置。 又，在專利文獻2中，揭示有紅外線檢測裝置。在此裝 置中在2維排列之紅外線檢測檢測元件，設置垂直方向 解碼器及水平方向解碼器，藉由各解碼器之開關操作而分 別測定由各紅外線檢測元件產生之電動勢。 φ 專利文獻1 :日本特開平5-149738號公報 專利文獻2.日本特開2〇05_3〇372〇號公報 【發明内容】 η 發明所欲解決之問題 但’上述先前技術係分別個別地測定在各紅外線檢測元 件所產生之電動勢。因此，保持由各紅外線檢測元件輸出 之電動勢之記憶區域之容量需要足夠2維排列之紅外線檢 測檢測凡件之數。又，因需依每1元件逐次開關操作紅外 線檢測檢測元件而測定電動勢，故在讀出每"貞之電動勢 138053.doc 200950069 上需要時間。 本發明係鑑於上述問題所研發而成，其目的在於提供可 縮小記憶電動勢之容量，並可加速讀出速度之熱檢測感測 器陣列。 解決問題之技術手段 為解決上述問題.，本發明之熱檢測感測器陣列之特徵在 於其係含有將複數晝素2維排列之熱型紅外線感應區域之 熱檢測感測器陣列’且各畫素含有包含輸出對應於入射之 熱量之電動勢之紅外線檢測元件之2個熱型紅外線感應 部，構成各畫素之2個熱型紅外線感應部係配置於薄膜狀 之隔膜部與紅外線吸收膜之間；在排列於2維排列之第丄方 向之複數晝素中，將構成各畫素之2個熱型紅外線感應部 中方之熱t紅外線感應部彼此串聯連接；在排列於2維 排列之第2方向之複數畫素中，將構成各畫素之2個熱型紅 外線感應部中另-方之熱型紅外線感應部彼此串聯連接。 在上述熱檢測感測器陣列中，構成各畫素之2個熱型紅 外線感應部之-方串聯連接於2維排狀p方向（例如列 方向）’另一方串聯連接於2維排列之第2方向（例如行方 向）。在此種構成中，紅外線入射於某畫素時，可由含該 旦素之第1方向之晝素排列獲得對應於紅外線強度之電動 勢’且可由含該畫素之第2方& 弟2方向之晝素排列獲得對應於紅 外線強度之電動勢，故可藉由牲 又j猎由特別指定此等畫素排列，而 特別指定該畫素。因此，依櫨 依·艨上述熱檢測感測器陣列，σ 要依照第1及第2方向之各金去灿八 各旦素排列保持電動勢之值即已足 138053.doc 200950069 夠故可縮小保持電動勢值用之記憶區域之容量。又，在 測疋上述電動勢之際，只要利用第i及第2方向之各晝素排 列單位開關操作而測定電動勢即可，與逐次開關操作每丄 晝素而測定電動勢之以往之裝置相比，可縮 動勢之讀出時間。 i Λ 又，其特徵也可在於：2個熱型紅外線感應部分別係在 ' i設於各畫素内之2個略矩形狀之區域分別排列有紅外線 φ 檢測元件而構成。或者，其特徵也可在於：隔膜部係藉由 蚀刻表面形成薄膜之支持基板之該表面之一部分而在支持 基板與薄膜之間設有間隙所形成，為施行該姓刻，將形成 於薄膜之蝕刻孔形成在2個熱型紅外線感應部之間。藉 此，可安適地構成上述之熱檢測感測器陣列。後者之情 形’隔膜部之平面形狀為略矩形狀，將複數之银刻孔，^ 著隔膜部之對角線排列而形成時更為理想。 又，其特徵也可在於：隔膜部之平面形狀含有至少—對 e 之邊，紅外線檢測元件係由隔膜部之至少一對之邊沿著與 該邊父又之方向向隔膜部之内側延伸。 【實施方式】 發明之效果 * 依據本發日月，可提供可縮小記憶電動勢之容量，並可加 速讀出速度之熱檢測感測器陣列。 以下，—面參照圖式’―面詳細說明本發明之熱檢測感 測器陣列之合適之實施型態。又’在圖式之說明中，對於 同一或相當部分，附以同一符號而省略重複之說明。以 138053.doc 200950069 下，參數Μ及N分別為2以上之整數。又，除非特別明示， 參數m為1以上Μ以下之任意整數，參數η為1以上N以下之 任意整數。 (第1實施型態） 圖1係有關本實施型態之熱檢測感測器陣列之概略構成 圖。本實施型態之熱檢測感測器陣列la如圖i所示，含有 熱型紅外線感應區域1 〇a、第1信號處理電路2〇、及第2信 號處理電路30。熱型紅外線感應區域1 〇a係將畫素2(m，n)2 維排列成Μ列N行。各畫素2(m，η)係分別在同一面内鄰接 配設輸出對應於入射之紅外光之強度之電氣的量（電流、 電壓等）之熱型紅外線感應部丨丨a(m，η)及熱型紅外線感應 部1 lb(m，η)所構成。 在熱型紅外線感應區域1 〇a中，在排列於2維排列之列方 向（第1方向，即圖i中之X軸方向）之複數畫素以叫丨）〜2(m，N) 中，將複數之熱型紅外線感應部lla(m，n)、Ub(m, η)中一 方之熱型紅外線感應部丨la(m, η)彼此（例如熱型紅外線感 應部lla(l，l)〜lla(l，N))互相電性串聯連接。又在排列於 2維排列之行方向（第2方向，即圖丨中之γ軸方向）之複數畫 素2(1，η)〜2(M，n)t，將複數之熱型紅外線感應部⑴⑼， n)、llb(m，η)中另一方之熱型紅外線感應部川⑼，幻彼此 (例如熱型紅外線感應部llb(u)〜爪⑷））互相電性串聯 連接。 在此’參照圖2及圖3詳細說明有關熱型紅外線感應區域 心之構成。圖2係圖i所示之熱型紅外線感應區域心之放 138053.doc 200950069 ❹200950069 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a thermal detection sensor array. [Prior Art] As a conventional thermal detection sensor array, there are, for example, a thermal detection sensor array described in the patent document or the patent document 2. In the patent document lt, there is a heating body position detecting device. In this apparatus, the electromotive force of each of the antimony telluride sensors is measured by sequentially opening and closing the operation to connect the switches connected to the ends of the respective antimony telluride sensors, and the measured electromotive force is memorized. Instead, the Shihua iron sensor that outputs the maximum electromotive force from the stored electromotive force is retrieved to determine the infrared incident position. Further, Patent Document 2 discloses an infrared detecting device. In this apparatus, the infrared detecting elements are arranged in two dimensions, and a vertical direction decoder and a horizontal direction decoder are provided, and the electromotive force generated by each of the infrared detecting elements is measured by switching operations of the respective decoders. φ Patent Document 1: Japanese Laid-Open Patent Publication No. Hei No. 5-194738. Patent Publication No. JP-A No. Hei. No. Hei. No. Hei. No. Hei. The electromotive force generated by each of the infrared detecting elements. Therefore, the capacity of the memory area for holding the electromotive force outputted by each of the infrared detecting elements requires an infrared ray detecting sufficient number of two-dimensional arrays to detect the number of the parts. Further, since it is necessary to measure the electromotive force by sequentially operating the infrared detecting element for each element, it takes time to read each of the electromotive force 138053.doc 200950069. The present invention has been made in view of the above problems, and an object thereof is to provide a thermal detecting sensor array which can reduce the capacity of a memory electromotive force and can accelerate the reading speed. The technical means for solving the problem is to solve the above problem. The thermal detecting sensor array of the present invention is characterized in that it is a thermal detecting sensor array of a thermal infrared sensing region in which two pixels are arranged in two dimensions and each painting The element includes two thermal infrared sensing units including an infrared detecting element that outputs an electromotive force corresponding to the incident heat, and the two thermal infrared sensing units constituting each pixel are disposed between the film-shaped diaphragm portion and the infrared absorbing film. In the plurality of elements arranged in the second direction of the two-dimensional array, the hot t-infrared sensing portions of the two thermal infrared sensing portions constituting each pixel are connected in series; and arranged in the second dimension of the two-dimensional array In the multi-pixel of the direction, the other thermal infrared sensing sections of the two thermal infrared sensing sections constituting each pixel are connected in series to each other. In the thermal detection sensor array, the squares of the two thermal infrared sensing units constituting each pixel are connected in series in the two-dimensional row-like p direction (for example, the column direction), and the other is connected in series to the two-dimensional array. 2 directions (for example, row direction). In such a configuration, when infrared rays are incident on a certain pixel, an electromotive force corresponding to the intensity of the infrared rays can be obtained from the arrangement of the elements in the first direction containing the denier, and the second party & The pixel arrangement obtains an electromotive force corresponding to the intensity of the infrared ray, so that the pixel can be specified by specifying the arrangement of the pixels. Therefore, according to the above-mentioned thermal detection sensor array, σ should maintain the value of the electromotive force according to the arrangement of the gold in each of the first and second directions, that is, 138053.doc 200950069 The capacity of the memory area used for the electromotive force value. Further, when the electromotive force is measured, the electromotive force can be measured by the unit switching operation of each of the pixels in the i-th and the second direction, and the electromotive force is measured by sequentially switching the operation of each element and measuring the electromotive force. The readout time of the retractable potential. Further, the two types of thermal infrared sensing units may be configured by arranging infrared φ detecting elements in two substantially rectangular regions of the respective pixels. Alternatively, it may be characterized in that the diaphragm portion is formed by providing a gap between the support substrate and the film by etching a portion of the surface of the support substrate on which the film is formed, and is formed on the film for performing the surname. The etching hole is formed between the two thermal infrared sensing portions. Thereby, the above-described thermal detecting sensor array can be comfortably constructed. In the latter case, the planar shape of the diaphragm portion is slightly rectangular, and it is more preferable to form a plurality of silver-engraved holes and to form diagonal lines of the diaphragm portion. Further, the planar shape of the diaphragm portion may include at least a side opposite to e, and the infrared detecting element may extend from at least one pair of sides of the diaphragm portion toward the inner side of the diaphragm portion in a direction parallel to the side edge. [Embodiment] Effects of the Invention * According to the present day and the month, a thermal detection sensor array capable of reducing the capacity of the memory electromotive force and accelerating the readout speed can be provided. Hereinafter, a suitable embodiment of the thermal detection sensor array of the present invention will be described in detail with reference to the drawings. In the description of the drawings, the same or equivalent parts will be denoted by the same reference numerals and the description will be omitted. Under 138053.doc 200950069, the parameters Μ and N are respectively integers of 2 or more. Further, unless otherwise specified, the parameter m is an arbitrary integer of 1 or more and 参数, and the parameter η is an arbitrary integer of 1 or more and N or less. (First embodiment) Fig. 1 is a schematic configuration diagram of a thermal detecting sensor array according to this embodiment. As shown in Fig. 1, the thermal detection sensor array 1a of this embodiment includes a thermal infrared sensing area 1a, a first signal processing circuit 2A, and a second signal processing circuit 30. The thermal infrared sensing area 1 〇a arranges the pixels 2 (m, n) in two dimensions in a row of N rows. Each of the pixels 2 (m, η) is provided with a thermal infrared sensing portion 丨丨a (m, η) that outputs an electrical quantity (current, voltage, etc.) corresponding to the intensity of the incident infrared light in the same plane. And the thermal infrared sensing unit is composed of 1 lb (m, η). In the thermal infrared sensing region 1 〇a, the plurality of pixels arranged in the direction of the two-dimensional array (the first direction, that is, the X-axis direction in FIG. i) is called 丨2) (2, m, N) The thermal infrared sensing portions 丨la(m, η) of one of the plurality of thermal infrared sensing portions 11a (m, n) and Ub (m, η) (for example, the thermal infrared sensing portion 11a (l, l) ) lla (l, N)) are electrically connected in series. Further, the plurality of pixels 2(1, η) 2 (M, n) t arranged in the row direction of the two-dimensional array (the second direction, that is, the γ-axis direction in the figure), and the plurality of thermal infrared sensors The other of the heat-infrared sensing units (9) of the parts (1), (9), n), and llb (m, η) are electrically connected in series to each other (for example, the thermal infrared sensing portions 11b (u) to (c) (4)). Here, the configuration of the thermal infrared sensing region will be described in detail with reference to Figs. 2 and 3. Figure 2 is a diagram of the thermal infrared sensing area shown in Figure i. 138053.doc 200950069 ❹
大圖。又，圖3係表示沿著圖2所示之ΠΙ_ΙΠ線之剖面之側 面剖面圖。本實施型態之熱型紅外線感應區域i〇a係藉由 所謂體微機械技術所形成，包含熱電堆形成膜12、紅外線 吸收膜13、矽（Si)基板14、第丨布線15、及第2布線16。矽 基板14具有矩形之平面形狀，且含有設於該平面形狀内之 複數格子部17。格子部17所圍成之區域為開口 Ma，將後 述之熱電堆形成膜12形成薄膜構造（隔膜構造）。又，此開 口 14a係藉由對矽基板14之選擇性濕式蝕刻而妥適形成。 又’在本實施型態中，開Dl4a係形成跨過行方向（第2方 向）之複數畫素2(m，η)而延伸之形狀。 熱電堆形成膜12係内部含有各畫素2(m，η)之敎型紅外線 感應部ua、m之膜狀構件。熱電堆形成膜㈣以阻塞開 口 14a之方式設於矽基板14上。熱型紅外線感應部〖〖a、 1 lb係分別藉由排列於&電堆形成膜i2之内部之複數熱電 偶（紅外線檢測檢測元件）τ所構成。複數熱電偶（紅外線檢 測檢測元件）T係輸出對應於入射之熱量（紅外線強度）之電 動勢之元件’分別在各熱型紅外線感應部⑴、m被互相 串聯連接。又’各熱型紅外線感應部11a、lib之複數熱電 偶T係刀別排列於並設在各晝素2(出，n)内之2個略矩形狀之 區域S 1，S 2。 熱電堆形成膜12係呈現以覆蓋形成於絕緣性之薄膜心 、复數,、，、$偶τ之方式在其上進—步形成絕緣膜之構 造°又’薄膜Ua中阻塞開口⑷之部分係在本實施型態中 構成隔膜部’複數熱電偶T係配置於此隔膜部與紅外線吸 138053.doc 200950069 收膜13之間。在本實施型態中，開口 跨過行方向（第2 方向）之複數畫素2(m，η)而延伸，故薄膜12a之隔膜部之平 面形狀係含有沿著行方向（第2方向）之一對之邊L。而，熱 電偶T係由隔膜部之至少一對之邊l沿著與該邊交又之方向 向隔膜部之内側延伸。又，絕緣性之薄膜12&及絕緣膜i 2b 例如係由Si02、SiN等所構成。 紅外線吸收膜13係依照各畫素2(m，n)設置在熱電堆形成 膜12之隔膜部上’規定著紅外線檢測區域Ai。紅外線吸收 膜13係將入射之能量（紅外線）變換成熱之膜，在本實施型 態中，其平面形狀係矩形狀（正方形狀更佳）。紅外線吸收 膜13係由主要含有TiN之第〖層（未圖示）、與主要含有 SiC、SiN、Si02、Si3N4、或Si〇N等之si系化合物而設於 弟1層上之第2層（未圖示）所形成。 第1布線15係在列方向（第丨方向）電性串聯連接各畫素 2(m，η)之一方熱型紅外線感應部1 la(m，n)，向列方向（第工 方向）延伸而設在相鄰於列方向之畫素2(m，η)之間。第 線15例如係由鋁所形成。如此，藉由第丨布線丨5連接各畫 素2(m，η)之方熱型紅外線感應部1 ia(m, η)，而在排列於 2維排列之第1方向之晝素2(m，1}〜2(m,N)中，將一方之熱型 紅外線感應部lla(m，n)彼此（例如一方之熱型紅外線感應 部〜llad’N))電性串聯連接，而在熱型紅外線感應 區域10a構成向第1方向延伸之畫素排列。此向第】方向延 伸之晝素排列可形成N行。X，第！布線15係將一方端部連 接於GND(接地端）或C〇MM〇N(共通端），將另一方端部連 138053.doc 200950069 接於第1信號處理電路20。 第2布線16係在行方向（第2方向）電性串聯連接各晝素 2(m，η)之另一方熱型紅外線感應部Ub(m，n)，向行方向 (第2方向）延伸而設在相鄰於列行方向之畫素2(m，n)之 間。第2布線16例如係由鋁所形成。如此，藉由第2布線16 連接各晝素2(m，η)之另一方熱型紅外線感應部nb(m，n)， 而在排列於2維排列之第2方向之複數晝素2(1 ,n)〜2(M，n)Big picture. Further, Fig. 3 is a side cross-sectional view showing a section along the ΠΙ_ΙΠ line shown in Fig. 2. The thermal infrared sensing region i〇a of the present embodiment is formed by a so-called bulk micro-mechanical technique, and includes a thermopile forming film 12, an infrared absorbing film 13, a cerium (Si) substrate 14, a second wiring 15, and The second wiring 16 is provided.基板 The substrate 14 has a rectangular planar shape and includes a plurality of lattice portions 17 provided in the planar shape. The region surrounded by the lattice portion 17 is the opening Ma, and the thermopile forming film 12 to be described later is formed into a thin film structure (diaphragm structure). Further, the opening 14a is suitably formed by selective wet etching of the germanium substrate 14. Further, in the present embodiment, the opening D14a forms a shape extending across the plurality of pixels 2 (m, η) in the row direction (second direction). The thermopile forming film 12 contains a film-like member of the 红外线-type infrared sensing portions ua and m of each pixel 2 (m, η). The thermopile forming film (4) is provided on the crucible substrate 14 in such a manner as to block the opening 14a. The thermal infrared sensing unit [a, 1 lb is composed of a plurality of thermocouples (infrared detecting and detecting elements) τ arranged inside the & stack forming film i2. The plurality of thermocouples (infrared detecting and detecting elements) T output the elements of the electric potential corresponding to the incident heat (infrared intensity) are connected in series to each of the heat type infrared sensing units (1) and m. Further, the plurality of thermocouples T of the thermal infrared sensing units 11a and 11b are arranged in two slightly rectangular regions S 1, S 2 provided in the respective elements 2 (out, n). The thermopile forming film 12 exhibits a structure in which an insulating film is formed thereon in such a manner as to cover the insulating film core, the plural, the, and the τ, and the portion of the film Ua that blocks the opening (4). In the present embodiment, the diaphragm portion constituting the plurality of thermocouples T is disposed between the diaphragm portion and the infrared absorbing film 138053.doc 200950069. In the present embodiment, the opening extends across the plurality of pixels 2 (m, η) in the row direction (second direction), so that the planar shape of the diaphragm portion of the film 12a includes the direction along the row (the second direction). One of the sides is L. Further, the thermocouple T is extended from the side of at least one pair of the diaphragm portions toward the inner side of the diaphragm portion in the direction intersecting the side. Further, the insulating film 12& and the insulating film i 2b are made of, for example, SiO 2 , SiN or the like. The infrared ray absorbing film 13 is provided on the diaphragm portion of the thermopile forming film 12 in accordance with each pixel 2 (m, n) to define an infrared ray detecting region Ai. The infrared absorbing film 13 converts incident energy (infrared rays) into a film of heat. In the present embodiment, the planar shape is rectangular (more preferably square). The infrared ray absorbing film 13 is a second layer which is provided on the first layer of the first layer by a layer (not shown) mainly containing TiN and a si-based compound mainly containing SiC, SiN, SiO 2 , Si 3 N 4 or Si 〇 N. (not shown) formed. The first wiring 15 is electrically connected in series in the column direction (the second direction) to each of the pixels 2 (m, η), the thermal infrared sensing unit 1 la (m, n), and the nematic direction (the direction of the work) The extension is provided between the pixels 2 (m, η) adjacent to the column direction. The first line 15 is formed, for example, of aluminum. In this way, the square heat-type infrared sensing portion 1 ia(m, η) of each pixel 2 (m, η) is connected by the second wiring 丨 5, and the pixel 2 arranged in the first direction of the two-dimensional array (m, 1} to 2 (m, N), one of the thermal infrared sensing portions 11a (m, n) is electrically connected in series to each other (for example, one of the thermal infrared sensing portions llad'N), and The thermal infrared sensing region 10a constitutes a pixel arrangement extending in the first direction. The arrangement of the pixels extending in the 】 direction can form N rows. X, the first! The wiring 15 has one end connected to GND (ground) or C 〇 MM 〇 N (common terminal), and the other end is connected to 138053.doc 200950069 to the first signal processing circuit 20. The second wiring 16 is electrically connected in series in the row direction (second direction) to the other thermal infrared sensing portion Ub (m, n) of each of the elements 2 (m, η) in the row direction (second direction). The extension is located between the pixels 2 (m, n) adjacent to the column row direction. The second wiring 16 is formed, for example, of aluminum. In this manner, the other thermal infrared sensing portion nb (m, n) of each of the halogen elements 2 (m, η) is connected by the second wiring 16, and the plurality of halogen elements 2 arranged in the second direction of the two-dimensional array are arranged. (1,n)~2(M,n)
中，將另一方之熱型紅外線感應部nb(m，n)彼此（例如另 一方之熱型紅外線感應部llb(1，1}〜llb(M,1)}電性串聯連 接，而在熱型紅外線感應區域丨〇a構成向第2方向延伸之晝 素排列。此向第2方向延伸之畫素排列可形成…列。又， 第2布線16係將一方端部連接於GND(接地端）或 C〇MM〇N(共通端），將另一方端部連接於第2信號處理電 路3 0 〇 第^信號處理電路20係在第^向之各畫素排列檢測表示 入射於熱型紅外線感應區域1〇a之紅外線之熱量之電壓。 第2信號處理電路30係在第2方向之各晝素排列檢測表示入 射於熱型紅外線感應區域1〇&之紅外線之熱量之電壓。第1 «處理電路20及第2信號處理電路職可在相同時點執 行動作’也可依照時間系列順序獨立地執行動作。 在此，圖4係用來說明特別指定本實施型態之熱檢測) 測器陣列13之受光位置之方法之圖。圖*所示之熱檢· 心陣列U係使晝素2維排列成8行巧列所構成。如圖〇 不’例如紅外光入射於圓所圍成之位置C1、C2時，電》 138053.doc 200950069 #號會由排列於入射之位置之畫素2(m, n)之熱型紅外線感 應部11 a、11 b分別被輸出。而，由熱型紅外線感應部11 a 被輸出之電壓信號係在第1信號處理電路2〇被檢測作為含 該畫素2(m，η)之第1方向之畫素排列之輸出信號。又，由 熱型紅外線感應部1 lb被輸出之電壓信號係在第2信號處理 電路3 0被檢測作為含該畫素2(m，n)之第2方向之畫素排列 之輸出信號。例如，圖4之情形，在第1方向，電壓信號由 第2、3、5、及6行之畫素排列被輸出，在第2方向，電壓 信號由第3、4 '及5列被輸出。電壓之強度依照該畫素排 列所含之受光晝素2(m，n)之數而變化。而，算出第1方向 及第2方向之輸出電壓重疊之畫素2(m，η)，藉以特別指定 受光位置。 說明有關本實施型態之熱檢測感測器陣列la之效果。如 圖2及圖3所示’在本實施型態之熱檢測感測器陣列la中， 構成各晝素2(m，n)之2個熱型紅外線感應部中一方之熱型 紅外線感應部lla(m，n)串聯連接於2維排列之第1方向（列 方向）’另一方之熱型紅外線感應部llb(m, η)串聯連接於2 維排列之第2方向（行方向）。在此種構成中，可由含入射紅 外線之畫素2(m，η)之第丨方向之畫素排列獲得對應於紅外 線強度之輸出信號，且可由含該晝素2(m, n)之第2方向之 畫素排列獲得對應於紅外線強度之輸出信號，故可藉由特 別才0疋此等晝素排列’而特別指定該畫素2(m，n)。如此， ’、要依照第1及第2方向之各晝素排列施行輸出信號之讀出 及仏號值之保持即已足夠，故與依照每1畫素逐次讀出而 138053.doc 200950069The other thermal infrared sensing portions nb(m, n) are electrically connected in series to each other (for example, the other thermal infrared sensing portion 11b (1, 1} to 11b (M, 1)) is electrically connected. The infrared ray sensing area 丨〇a constitutes a pixel arrangement extending in the second direction. The pixel arrangement extending in the second direction can form a column. Further, the second wiring 16 connects one end to the GND (ground). End) or C〇MM〇N (common terminal), the other end is connected to the second signal processing circuit 30. The signal processing circuit 20 is detected in the pixel direction of the second direction to indicate that it is incident on the thermal type. The voltage of the heat of the infrared ray of the infrared ray sensing area 1 〇 a. The second signal processing circuit 30 detects the voltage of the heat of the infrared ray incident on the thermal infrared ray sensing area 1 〇 & 1 «The processing circuit 20 and the second signal processing circuit can perform operations at the same time point'. The operations can also be performed independently in accordance with the time series. Here, FIG. 4 is used to describe the thermal detection of the present embodiment. A diagram of a method of receiving a position of the array 13 of the array Inspection · Heart array U system consists of two dimensions of alizarin arranged in 8 rows and columns. As shown in the figure, for example, when infrared light is incident on the positions C1 and C2 enclosed by the circle, electricity 138053.doc 200950069 #号The thermal infrared sensing portions 11a and 11b of the pixels 2 (m, n) arranged at the incident position are respectively output, and the voltage signal output from the thermal infrared sensing portion 11a is applied to the first signal. The processing circuit 2 is detected as an output signal of the pixel arrangement including the first direction of the pixel 2 (m, η). Further, the voltage signal outputted by the thermal infrared sensing unit 1 lb is subjected to the second signal processing. The circuit 30 is detected as an output signal of a pixel arrangement including the second direction of the pixel 2 (m, n). For example, in the case of FIG. 4, in the first direction, the voltage signal is 2, 3, 5, And the pixel arrangement of 6 lines is output, and in the second direction, the voltage signal is output from the 3rd, 4th, and 5th columns. The intensity of the voltage is in accordance with the photoreceptor 2(m, n) contained in the pixel arrangement. In addition, the pixel 2 (m, η) in which the output voltages in the first direction and the second direction overlap is calculated, and the light receiving position is specified. The effect of the thermal detection sensor array la of this embodiment is as shown in FIG. 2 and FIG. 3 'in the thermal detection sensor array la of the present embodiment, which constitutes each element 2 (m, n) The thermal infrared sensing portion 11a (m, n) of one of the two thermal infrared sensing portions is connected in series to the other one in the first direction (column direction) of the two-dimensional array, and the other thermal infrared sensing portion 11b (m, η) Connected in series in the second direction (row direction) of the two-dimensional array. In this configuration, the output signal corresponding to the infrared intensity can be obtained by the pixel arrangement in the second direction of the pixel 2 (m, η) containing the incident infrared rays. And the output signal corresponding to the infrared intensity can be obtained by the pixel arrangement of the second direction containing the halogen 2 (m, n), so the pixel 2 can be specified by the special arrangement of the pixels. (m, n). In this way, it is sufficient to perform the reading of the output signal and the retention of the apostrophe value in accordance with the arrangement of the elements in the first and second directions. Therefore, the reading is performed one by one for each pixel. 138053.doc 200950069
保持之情形相比’可縮小保持輪出信號值用之記憶區域之 容量。加之’可提高輸出信號之讀出之速度，可更㈢速地 檢測被檢測光之變化。X，在測定輪出信號之際，只要利 用弟1及苐2方向之各晝素排列單位開關操作而測定輸出信 號即可，例如每1晝素之讀出時間為i ms時，第^方向之書 素排列為8行’第2方向之畫素排列為8行之情形，依：： 出來自各晝素排列之信號之情形所需之時間為16肥，第、 方向與第2方向並行地讀出之情形所需之時間為8阳。以 往，由於係依照每丨畫素逐次讀出輸出信號，故讀出所有 畫素之輸出信號需要64 mS(8x8=64)之讀出時間，故依照 本實施型態之熱檢測感測器陣列la，可大幅縮短每丨幢^ 讀出時間。 (第2實施型態） 圖5係有關本實施型態之熱檢測感測器陣列之概略構成 圖。本實施型態之熱檢測感測器陣列lb如圖5所示，含有 熱型紅外線感應區域l〇b、第1信號處理電路2〇、及第2信 號處理電路30。熱型紅外線感應區域10b係將畫素3(m, n)2 維排列成Μ列N行。1畫素係藉由分別在同一面内鄰接配設 輸出對應於入射之光之強度之電氣的量（電流、電壓等）之 熱型紅外線感應部24a(m, η)及熱型紅外線感應部24b(m，n) 所構成。 在熱型紅外線感應區域1 〇b中，在排列於2維排列之列方 向（第1方向，即圖5中之X軸方向）之複數畫素3(m，i)〜3(m，N) 中’將複數之熱型紅外線感應部24a(m，η)、24b(m，η)中一 138053.d〇c 200950069 方之熱型紅外線感應部24a(m，n)彼此（例如熱型紅外線感 應部24a(l，l)〜24a(l，N))互相電性串聯連接。又，在排列於 2維排列之行方向（第2方向，即圖5中之γ軸方向）之複數晝 素3(1，η)〜3(Μ，η)中，將複數之熱型紅外線感應部24a(m, n)、24b(m，η)中另一方之熱型紅外線感應部24b(m，n)彼此 (例如熱型紅外線感應部24b(l，l)〜24b(M,l))互相電性串聯 · 連接。 在此，參照圖6及圖7詳細說明有關熱型紅外線感應區域 l〇b之構成。圖6係圖5所示之熱型紅外線感應區域1〇b之放 © 大圖。又，圖7係表示沿著圖6所示之νιι_νπ線之剖面之側 面剖面圖。 本實施型態之熱型紅外線感應區域丨〇 b係藉由所謂表面 微機械技術所形成，包含熱電堆形成膜18、紅外線吸收膜 19、矽（Si)基板20、第1布線21、及第2布線22。矽基板2〇 具有㈣之平面形狀’且在其表面側，含有形成矩形之平 面形狀之複數之凹部20a。又，此凹部2〇a係藉由濕式蝕刻 而妥適形成，並構成基板20與熱電堆形成膜18之間之間〇 隙。 熱電堆形成膜18係内部含有各晝素3a(m，n)之熱型紅外 „ 線感應部24a、24b之膜狀構件。熱電堆形成膜以係以阻塞. 凹部20a之開口之方式設於矽基板2〇上。熱型紅外線感應 4 24a、24b係分別藉由排列於熱電堆形成膜i 8之内部之複 數熱電偶（紅外線檢測元件）了所構成。複數熱電偶τ係分別 在各熱型紅外線感應部24a、2仆被互相串聯連接。又，各 138053.doc -12- 200950069 熱型紅外線感應部24a、24b之複數熱電偶τ係分別排列於 並設在各畫素3(m，η)内之2個區域Rl、R2。 熱電堆形成膜18係與第1實施型態之熱電堆形成膜12同 樣地’呈現以覆蓋形成於絕緣性之薄膜18a上之複數熱電 偶T之方式在其上進一步形成絕緣膜i8b之構造。又，薄膜 18a中阻塞凹部2〇a之部分係在本實施型態中構成隔膜部， 複數熱電偶T係配置於此隔膜部與紅外線吸收膜19之間。 ❹ 在本實施型態中，凹部20a之平面形狀形成矩形狀，故薄 膜18a之隔膜部之平面形狀也形成矩形狀。而沿著隔膜部 之對角線形成有複數孔（蚀刻孔）23。此複數孔23係在姓刻 矽基板20之表面一部分而形成凹部2〇a之際被使用。又， 本實施型態之複數孔23係形成於2個熱型紅外線感應部 24a、24b之間，熱型紅外線感應部24a、24b互相被複數孔 23所分割。 又’因隔膜部之平面形狀為矩形狀，故隔膜部之平面形 φ 狀係含有沿著列方向（第1方向）之一對之邊L1、及沿著行 方向（第2方向）之另一對之邊L2。而，熱電偶T係由隔膜部 之各一對之邊LI、L2沿著與該邊交叉之方向向隔膜部之内 η 側延伸。 ' 紅外線吸收膜19係依照各畫素3(m，η)設置在熱電堆形成 膜18之隔膜部上’規定著紅外線檢測區域Α2。紅外線吸收 膜19係將入射之能量（紅外線）變換成熱之膜，在本實施型 態中’其平面形狀係矩形狀（正方形狀更佳）。由於在相當 於紅外線檢測區域Α2之矽基板20之表面形成有凹部20a， 138053.doc • 13 · 200950069 故紅外線吸收膜19係與熱電堆形成膜则時形成隔膜構 造。 第1布線21係在列方向（第丨方向）電性串聯連接各晝素 3(m，η)之一方熱型紅外線感應部24a(m，向列方向（第1 方向）延伸而設在相㈣列方向之畫素抑，η)之間。第W 線21例如係由鋁所形成。如此，藉由第丨布線以連接各晝 素3(m，η)之一方熱型紅外線感應部24a(m，幻，而在排列於 2維排列之第1方向之畫素vm，”〜3(m，N)中，將一方之熱型 紅外線感應部24a(m，n)彼此（例如—方之熱型紅外線感應 部24a(l，l)〜24a(l，N))電性串聯連接，而在熱型紅外線感應 區域10b構成向第1方向延伸之畫素排列。此向第1方向延 伸之畫素排列可形成N行。又，第1布線21係將一方端部連 接於GND(接地端）或COMMON(共通端）’將另一方端部連 接於第1信號處理電路20。 第2布線22係在行方向（第2方向）電性串聯連接各晝素 3(m, η)之另一方熱型紅外線感應部24b(m, η)，向行方向 (第2方向）延伸而設在相鄰於列行方向之畫素3(m，η)之 間。第2布線2 2例如係由銘所形成。如此，藉由第2布線2 2 連接各晝素3(m，η)之另一方熱型紅外線感應部24b(m，η)， 而在排列於2維排列之第2方向之複數畫素3(1，η)~3(Μ,η) 中，將另一方之熱型紅外線感應部24b(m, η)彼此（例如另 一方之熱型紅外線感應部24b(l,l)〜24b(M,l))電性串聯連 接，而在熱型紅外線感應區域l〇b構成向第2方向延伸之畫 素排列。此向第2方向延伸之畫素排列可形成Μ列。又， 138053.doc • 14· 200950069 第2布線22係將一方端部連接於GND(接地端）或 COMMON(共通端）’將另一方端部連接於第2信號處理電 路30。 依據本實施型態之熱型紅外線感應區域1〇b，可獲得與 上述第1實施型態之熱型紅外線感應區域10a同樣之效果。 本發明之熱檢測感測器陣列並不限定於上述各實施型 . 態，此外也可施行種種之變形。例如，上述實施型態之熱 φ 檢測感測器陣列雖含有體微機械型或表面微機械型之構 成，但只要構成各晝素之熱型紅外線感應部係配置於薄膜 狀之隔膜部與紅外線吸收膜之間，則也可採用其他之型 - 態。 產業上之可利用性 本發明係可用於提供可縮小記憶電動勢之容量，並可加 速讀出速度之熱檢測感測器陣列。 【圖式簡單說明】 β 圖1係有關本發明之熱檢測感測器陣列之第i實施型態之 概略構成圖； 圖2係圖1所示之熱型紅外線感應區域之放大圖，· 圖係表示/α著圖2所示之huh線之剖面之側面剖面 ran · 圖， 圖4係用來說明特別指定受光位置之方法之圖； 圖5係有關本發明之熱檢測感測器陣列之第2實施型態之 概略構成圖； ® 6係圖5所示之熱型紅外線感應區域之放大圖；及 138053.doc 15 200950069 圖7係表示沿著圖6所示之vii-VII線之剖面之侧 圖。 【主要元件符號說明】 la ' lb 2(m，η)、3(m，η) 10a' 10b lla(m, η)、llb(m，η)、 24a(m，η)、24b(m，η) 13、19 熱檢測感測器陣列 晝素 熱型紅外線感應區域 熱型紅外線感應部 ^外線吸收膜 138053.doc -16 -The case of keeping is smaller than the capacity of the memory area for keeping the value of the rounded signal. In addition, the reading speed of the output signal can be increased, and the change of the detected light can be detected more quickly. X, when measuring the turn-off signal, it is only necessary to measure the output signal by using the pixel arrangement unit switching operation in the direction of the brothers 1 and 苐2, for example, when the readout time per pixel is i ms, the second direction The book is arranged in 8 rows. The pixels in the 2nd direction are arranged in 8 rows. According to the following: The time required for the signal from each pixel arrangement is 16 fat, and the first direction is parallel to the second direction. The time required to read the situation is 8 yang. In the past, since the output signals are sequentially read out in accordance with each pixel, it takes 64 mS (8x8=64) of the readout time to read out the output signals of all the pixels, so the thermal detection sensor array according to this embodiment is used. La, can greatly shorten the reading time of each building. (Second Embodiment) Fig. 5 is a schematic configuration diagram of a thermal detecting sensor array according to this embodiment. As shown in Fig. 5, the thermal detecting sensor array 1b of the present embodiment includes a thermal infrared sensing region 100b, a first signal processing circuit 2A, and a second signal processing circuit 30. The thermal infrared sensing region 10b arranges the pixels 3 (m, n) in two dimensions in a row of N rows. In the first pixel, the thermal infrared sensing portion 24a (m, η) and the thermal infrared sensing portion that output electrical quantities (current, voltage, etc.) corresponding to the intensity of the incident light are disposed adjacent to each other in the same plane. 24b (m, n). In the thermal infrared sensing region 1 〇 b, the plurality of pixels 3 (m, i) 3 (m, N) arranged in the direction of the two-dimensional array (the first direction, that is, the X-axis direction in FIG. 5) In the middle of the plurality of thermal infrared sensing portions 24a (m, η), 24b (m, η), 138053.d〇c 200950069, the thermal infrared sensing portions 24a (m, n) are mutually The infrared sensing sections 24a (1, 1) to 24a (1, N) are electrically connected in series to each other. Further, in the plurality of halogen elements 3 (1, η) to 3 (Μ, η) arranged in the row direction of the two-dimensional array (the second direction, that is, the γ-axis direction in FIG. 5), a plurality of thermal infrared rays are used. The other of the sensing portions 24a (m, n) and 24b (m, η) is a thermal infrared sensing portion 24b (m, n) (for example, the thermal infrared sensing portion 24b (1, l) to 24b (M, l) )) Electrically connected in series and connected. Here, the configuration of the thermal infrared sensing region 10b will be described in detail with reference to Figs. 6 and 7 . Fig. 6 is a plan view of the thermal type infrared sensing area 1b shown in Fig. 5. Further, Fig. 7 is a side cross-sectional view showing a section along the line νιι_νπ shown in Fig. 6. The thermal infrared sensing region 本b of the present embodiment is formed by a so-called surface micromachining technique, and includes a thermopile forming film 18, an infrared absorbing film 19, a 矽(Si) substrate 20, a first wiring 21, and The second wiring 22 is provided. The ruthenium substrate 2 has a planar shape of (4) and has a plurality of concave portions 20a forming a rectangular planar shape on the surface side thereof. Further, the concave portion 2〇a is suitably formed by wet etching, and constitutes a gap between the substrate 20 and the thermopile forming film 18. The thermopile forming film 18 contains a film-shaped member of the thermal infrared ray sensing portions 24a and 24b of each halogen 3a (m, n). The thermopile is formed to block the opening of the recess 20a. The thermal infrared sensing 4b, 24b is composed of a plurality of thermocouples (infrared detecting elements) arranged inside the thermopile forming film i8. The complex thermocouples τ are respectively in the respective heats. The infrared ray sensing units 24a and 2 are connected in series to each other. Further, each of the 138053.doc -12-200950069 thermal infrared sensing units 24a and 24b has a plurality of thermocouples τ arranged in each pixel 3 (m, Two regions R1 and R2 in η) The thermopile forming film 18 is formed in the same manner as the thermopile forming film 12 of the first embodiment to cover the plurality of thermocouples T formed on the insulating film 18a. Further, the structure of the insulating film i8b is further formed thereon. Further, the portion of the film 18a that blocks the concave portion 2〇a constitutes a diaphragm portion in the present embodiment, and the plurality of thermocouples T are disposed in the diaphragm portion and the infrared absorbing film 19本 In this embodiment, the recess 20 Since the planar shape of a is formed in a rectangular shape, the planar shape of the diaphragm portion of the film 18a is also formed in a rectangular shape, and a plurality of holes (etched holes) 23 are formed along the diagonal line of the diaphragm portion. The surface of the substrate 20 is partially formed to form the recess 2a. Further, the plurality of holes 23 of the present embodiment are formed between the two thermal infrared sensing portions 24a and 24b, and the thermal infrared sensing portions 24a and 24b. Since the plane shape of the diaphragm portion is rectangular, the planar shape of the diaphragm portion includes the side L1 along the column direction (the first direction) and the line along the line. The other pair of sides L2 of the direction (the second direction) is formed by the pair of sides LI and L2 of the diaphragm portion extending toward the inner side η side of the diaphragm portion along the direction intersecting the side. The infrared ray absorbing film 19 is provided on the diaphragm portion of the thermopile forming film 18 in accordance with each pixel 3 (m, η) to define an infrared ray detecting region Α2. The infrared absorbing film 19 converts incident energy (infrared rays) into heat. Membrane, in this embodiment, its planar shape is rectangular (The square shape is more preferable.) Since the concave portion 20a is formed on the surface of the substrate 20 corresponding to the infrared detecting region Α2, 138053.doc • 13 · 200950069, the infrared absorbing film 19 and the thermopile forming film form a diaphragm structure. The first wiring 21 is electrically connected in series in the column direction (the second direction) to each of the halogen-type infrared sensing portions 24a (m, which is extended in the column direction (first direction)). The phase (4) is between the pixels of the column direction and η). The W-th line 21 is formed, for example, of aluminum. Thus, the second-order heat-type infrared sensing is connected by the second wiring to connect each of the halogens 3 (m, η) In the portion 24a (m, phantom, in the pixel vm arranged in the first direction of the two-dimensional array, "3, m, N), one of the thermal infrared sensing portions 24a (m, n) is mutually The hot-type infrared sensing sections 24a (1, l) to 24a (1, N) are electrically connected in series, and the thermal infrared sensing region 10b constitutes a pixel arrangement extending in the first direction. This pixel arrangement extending in the first direction can form N lines. Further, the first wiring 21 has one end connected to the GND (ground) or COMMON (common terminal) and the other end connected to the first signal processing circuit 20. The second wiring 22 is electrically connected in series in the row direction (second direction) to the other thermal infrared sensing portion 24b (m, η) of each of the elements 3 (m, η) in the row direction (second direction). The extension is located between the pixels 3 (m, η) adjacent to the column row direction. The second wiring 2 2 is formed, for example, by Ming. In this manner, the other thermal infrared sensing portion 24b (m, η) of each of the halogen elements 3 (m, η) is connected by the second wiring 2 2 , and the plurality of pixels arranged in the second direction of the two-dimensional array are arranged. In the case of 3 (1, η) to 3 (Μ, η), the other of the thermal infrared sensing portions 24b (m, η) (for example, the other of the thermal infrared sensing portions 24b (1, 1) to 24b ( M, l)) are electrically connected in series, and the thermal infrared sensing region 10b constitutes a pixel arrangement extending in the second direction. The pixel arrangement extending in the second direction can form a matrix. Further, 138053.doc • 14· 200950069 The second wiring 22 has one end connected to the GND (ground) or COMMON (common terminal) and the other end connected to the second signal processing circuit 30. According to the thermal infrared sensing region 1b of the present embodiment, the same effects as those of the thermal infrared sensing region 10a of the first embodiment described above can be obtained. The thermal detecting sensor array of the present invention is not limited to the above-described embodiments, and various modifications can be made. For example, although the thermal φ detecting sensor array of the above-described embodiment includes a micro-mechanical type or a surface micro-mechanical type, the thermal infrared sensing unit constituting each element is disposed in a film-shaped diaphragm portion and infrared rays. Other types can be used between the absorbing membranes. Industrial Applicability The present invention can be used to provide a thermal detection sensor array which can reduce the capacity of a memory electromotive force and can accelerate the readout speed. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic configuration diagram of an ith embodiment of a thermal detection sensor array of the present invention; FIG. 2 is an enlarged view of a thermal infrared sensing region shown in FIG. It is shown that /α is a side cross section of the cross section of the huh line shown in Fig. 2, and Fig. 4 is a diagram for explaining a method of specifying the light receiving position; Fig. 5 is a diagram of the thermal detecting sensor array of the present invention. 2 is a schematic view of a thermal infrared sensing region shown in FIG. 5; and 138053.doc 15 200950069 FIG. 7 is a cross-sectional view along the vii-VII line shown in FIG. Side view. [Description of main component symbols] la ' lb 2 (m, η), 3 (m, η) 10a' 10b lla (m, η), llb (m, η), 24a (m, η), 24b (m, η) 13,19 Thermal detection sensor array Alizarin thermal infrared sensing area Thermal infrared sensing unit ^External absorption film 138053.doc -16 -