JP3549363B2 - Infrared solid-state imaging device - Google Patents

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a two-dimensional infrared solid-state imaging device using a thermal infrared detector.
[0002]
[Prior art]
FIG. 12 is a perspective view showing an example of the structure of a conventional pixel of a two-dimensional solid-state imaging device using a bolometer that is a thermal infrared detector whose resistance value changes with temperature. For example, an infrared detector unit 10 including a bolometer thin film 11 is provided on a substrate 1 made of a semiconductor such as silicon with a space therebetween. The two support legs 21 and 22 lift and lift the infrared detector unit 10 from the silicon substrate. The metal wirings 31 and 32 allow current to flow through the bolometer thin film 11, and ON and OFF of the current are controlled by a detection circuit.
[0003]
Next, the operation of the two-dimensional infrared solid-state imaging device using the thermal infrared detector will be described. Infrared rays enter from the side where the photodetector unit 10 is present and are absorbed by the photodetector unit 10. The infrared energy absorbed by the photodetector section 10 is converted into heat, and the temperature of the photodetector section 10 is increased. The temperature rise depends on the amount of incident infrared light (the amount of incident infrared light depends on the temperature and emissivity of the imaging target). Since the amount of temperature rise can be known by measuring the change in the resistance value of the bolometer thin film, the amount of infrared radiation emitted by the imaging object can be known from the change in the resistance value of the bolometer.
[0004]
[Problems to be solved by the invention]
If the temperature coefficient of resistance of the bolometer thin film is the same, the larger the temperature rise of the photodetector unit, the larger the resistance change obtained by the same amount of incident infrared light and the higher the sensitivity, but in order to increase the temperature rise, It is effective to minimize the heat escaping from the photodetector section 10 to the silicon substrate 1, so that the supporting legs 21 and 22 are designed to increase the thermal resistance as much as possible. It is also important to reduce the heat capacity of the photodetector unit 10 so that the temperature time constant of the photodetector unit 10 becomes shorter than the frame time of the image sensor. It is also effective to increase the area of the photodetector section 10 that receives infrared rays to increase the sensitivity. However, in the conventional structure, since the heat from one photodetector section 10 escapes from the two support legs 21 and 22, the temperature of the photodetector section does not sufficiently rise, and high sensitivity is hindered. Was.
[0005]
In addition, a large number of supporting legs hinders improvement in sensitivity. FIG. 13 is a plan view of the structure shown in FIG. 12. Referring to FIG. 13, the area occupied by the photodetector unit 10 for receiving infrared rays and the supporting legs 21 and 22 in the pixel will be considered. The width of the supporting leg is determined by the width of the wirings 31 and 32, the margin between the wiring and the pattern of the insulating film forming the supporting leg (twice the margin on one side), and the width of the detector unit 10 through the manufacturing process. Is determined in consideration of two widths (in this case, the thickness is also determined) determined by the mechanical strength enough to support the hollow. Heat will escape to the substrate through the two support legs determined by this width. In FIG. 13, the wirings 31 and 32 are connected to the readout circuit via the contacts 121 and 122. On both sides of the support leg, a detector unit or another support leg is arranged via a space required for pattern formation. If all the required spaces are the same, three spaces need to be allocated per pixel. is there. Therefore, the width of the detector unit 10 in the vertical direction in the drawing is obtained by subtracting the width of two support legs and the width of three gaps from the pixel vertical pitch, which is subject to design restrictions. The width of the photodetector 10 allocated in the drawing vertical direction is the width of two support legs 21 and 22, the width of the support legs, and the width of three necessary gaps between the detector unit, the support legs, and the support legs. Is subtracted from the pixel pitch, which imposes a limit on the area of the photodetector section 10 and hinders an increase in sensitivity.
An object of the present invention is to provide a high-sensitivity infrared solid-state imaging device.
[0006]
[Means for Solving the Problems]
A first infrared solid-state imaging device according to the present invention has a semiconductor substrate , a thermal detector disposed above the semiconductor substrate, and one end attached to a side of the thermal detector, A support leg extending along the side of the thermal detector unit and a gap via the gap and supporting the semiconductor substrate with a space therebetween, wherein the support leg includes: A plurality of wirings forming an electrical path between the thermal detector unit and the semiconductor substrate are laminated via an insulating film, and the width of the support leg is equal to the wiring width and the width of the insulating film pattern wider than the wiring width. The width is defined by a margin, and the characteristic change of the thermal detector due to the incidence of infrared rays is detected through the wiring in the support leg .
Preferably, in the infrared solid-state imaging device, the thermal detector unit includes an infrared detection thin film and a plurality of electrodes electrically connected to the infrared detection thin film. An electrode located below the thin film is formed wider than the infrared detecting thin film. Preferably, of the plurality of electrodes, an electrode located above the infrared detection thin film is formed on substantially the entire surface of the infrared detection thin film.
A first two-dimensional infrared solid-state imaging device according to the present invention includes a semiconductor substrate, a plurality of pairs of thermal detectors and support legs two-dimensionally arranged on the semiconductor substrate, and generates heat due to incident infrared light. The characteristic change of the mold detector is detected through the wiring in the support leg. In the pair of the thermal detector section and the support leg, one end of the support leg is attached to a side of the thermal detector section, and the thermal leg detection is performed through a gap with the thermal detector section. A plurality of wirings extending along the sides of the detector and supporting the semiconductor substrate with a space therebetween, and forming an electric path between the thermal detector unit and the semiconductor substrate in the support leg; The support legs are laminated via a film, and the width of the support leg is a width defined by the wiring width and a margin of an insulating film pattern wider than the wiring width.
[0007]
A second infrared solid-state imaging device according to the present invention includes a semiconductor substrate having a cavity on a surface thereof, a thermal detector disposed above the semiconductor substrate, and a semiconductor substrate having a cavity disposed on the semiconductor substrate. A support leg for supporting the thermal detector unit with a space therebetween, the support leg having one end attached to a side of the thermal detector unit; A plurality of wirings extending along the side portion via a gap to support the thermal detector, and forming an electric path between the thermal detector and the semiconductor substrate in the support leg. Are laminated via an insulating film, and the width of the support leg is a width defined by the wiring width and a margin of an insulating film pattern wider than the wiring width. Changes are detected through wiring in the support legs.
Preferably, in the infrared solid-state imaging device, the thermal detector unit includes an infrared detection thin film and a plurality of electrodes electrically connected to the infrared detection thin film. An electrode located below the thin film is formed wider than the infrared detecting thin film. Preferably, of the plurality of electrodes, an electrode located above the infrared detection thin film is formed on substantially the entire surface of the infrared detection thin film.
According to a second two-dimensional infrared solid-state imaging device according to the present invention, there are provided a semiconductor substrate having a plurality of cavities formed on a surface thereof, a plurality of pairs of thermal detectors arranged two-dimensionally on the semiconductor substrate, and a support. It consists of legs, and detects a change in characteristics of the thermal detector due to the incidence of infrared rays through wiring in the support legs. The plurality of cavities are provided on the surface of the semiconductor substrate for each of a pair of thermal detectors and a support leg. In the pair of the thermal detector and the support leg, the support leg supports the thermal detector with a space above the cavity, and the support leg includes the thermal detector. At one side, one end thereof is attached, extends along the side portion through a gap with the thermal type detector portion to support the thermal type detector, and the thermal type detection portion is provided in the support leg. A plurality of wirings forming an electrical path between the container unit and the semiconductor substrate are stacked via an insulating film, and the width of the support leg is determined by the wiring width and a margin of the insulating film pattern wider than the wiring width. The specified width.
[0008]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
Embodiment 1 FIG.
FIG. 1 is a schematic perspective view showing the structure of one pixel of a two-dimensional infrared solid-state imaging device according to Embodiment 1 using a bolometer whose resistance value changes with temperature, which is a thermal infrared detector. FIG. 2 is a schematic sectional view along a current path of the infrared solid-state imaging device. FIG. 2 omits a signal readout circuit provided on the substrate 1 which is not directly related to the present invention for simplicity. In the two-dimensional solid-state imaging device, the pixels shown in FIGS. 1 and 2 are two-dimensionally arranged.
[0009]
In the structure shown in FIGS. 1 and 2, the infrared detector section 10 includes a bolometer thin film 11 whose resistance value changes with temperature. The infrared detector unit 10 is provided with a space 90 separated from the substrate 1 made of a semiconductor such as silicon. An insulating film 80 is provided on the substrate 1, one supporting leg 20 having a large thermal resistance is fixed on the insulating film 80, and the infrared detector unit 10 is lifted up from the silicon substrate 1. That is, the infrared detector unit 10 is supported above the substrate 1 by one support leg 20. The infrared detector unit 10 has a five-layer structure in which an insulating film 110, a metal wiring 31, an insulating film 130, a bolometer film 11, a metal wiring 32 connected thereto, and an insulating film 100 are sequentially stacked from below. The metal wirings 31 and 32 are electrically connected to both ends of the square bolometer film 11. The support leg 20 also has a similar five-layer structure, and a plurality of (two in the present embodiment) metal wirings 31 and 32 for flowing a current to the bolometer thin film 11 are arranged inside one support leg 20. You. The insulating films 100, 110, and 130 are made of a silicon oxide film, a silicon nitride film, or the like that forms the mechanical structure of the support leg 20 and the detector unit 10. The insulating film 130 is an interlayer insulating film between the wirings 31 and 32. It also plays the role of a membrane.
On the substrate 1, a two-dimensional matrix is formed by the signal lines 50 and the read circuit control clock bus lines 60, and the read circuit 40 is provided at each intersection of the signal lines 50 and the read circuit control clock bus lines 60.
The support leg 20 is attached to the substrate 1 on the signal line 50 in the present embodiment. At the portion where the support leg 20 is connected to the substrate, the metal wirings 31 and 32 pass through the contact holes 121 and 122 provided in the insulating films 130, 110 and 80 to the signal readout circuit 40 on the silicon substrate 1 (not shown). Connected. In the signal readout circuit 40, the metal wiring 31 is connected to a control clock line via a switch transistor, and the metal wiring 32 is connected to a signal line. The switch transistor turns on and off a current flowing through the wirings 31 and 32 and the bolometer thin film 11 according to a clock signal from a control clock line.
Further, the metal reflection film 70 is provided on the insulating film 80 at a position corresponding to the position below the bolometer film 11, and forms an optical resonance structure with the detector unit 10 to increase the absorption of infrared rays by the detector unit 10. Let it. In some cases, the detector unit 10 is formed with a thin metal infrared absorbing film to help absorb infrared light.
As is clear from FIGS. 1 and 2, the two-dimensional infrared solid-state imaging device has a structure in which two or more wirings are arranged in one support leg 20, so that the number of support legs can be reduced as compared with the conventional case. Thus, the amount of heat escaping from the detector section 10 is reduced, and the sensitivity can be increased.
[0010]
FIG. 3 is a plan view of the device structure shown in FIGS. 1 and 2 excluding a portion related to the metal wiring 31. FIG. 4 is a plan view showing a portion related to the metal wiring 32 in the device structure shown in FIGS. FIG. The upper wiring 32 is in contact with the left end of the bolometer film 11 as shown in FIG. 3, and the lower wiring 31 is in contact with the bolometer film 11 at the right end as shown in FIG.
As is clear from FIGS. 3 and 4, this two-dimensional infrared solid-state imaging device can reduce the number of supporting legs compared to the conventional one, so that the area allocated to the detector unit 10 is smaller than that of the conventional one. Can be increased by the reduced amount. The area corresponding to the sum of the area occupied by the support legs in the reduced portion and the area corresponding to the gap between the support legs and the detector unit can also be assigned to the photodetector unit, and the aperture ratio can be increased. This is effective for increasing the sensitivity.
[0011]
Next, an infrared detection operation of a pixel of the two-dimensional infrared solid-state imaging device using the thermal infrared detector according to the present embodiment will be described. Infrared rays enter from the detector section 10 side. The incident infrared rays are absorbed by the detector unit 10 and increase the temperature of the detector unit 10. The temperature rise of the detector unit 10 is detected by a change in resistance of the bolometer film 11. This change in resistance is detected by a signal readout circuit formed on the silicon substrate through the wirings 31 and 32 and the contacts 121 and 122, thereby detecting infrared rays. The reflection film 70 and the detector unit 10 form an optical resonance structure to increase the efficiency of infrared absorption.
[0012]
Embodiment 2 FIG.
5 and 6 are schematic sectional views along a current path of a pixel of a two-dimensional infrared solid-state imaging device using a thermal infrared detector according to a second embodiment of the present invention, and correspond to FIG. 3 of the first embodiment. It is a top view. In this structure, as shown in FIG. 6, the lower metal wiring 32 is formed below the bolometer film 11 so as to extend from the bolometer film 11, and the reflection film formed by the element of the first embodiment is removed. I have. Other components are the same as those of the first embodiment.
[0013]
In this structure, the metal electrode 32 functions as a reflection film in a portion of the metal wiring 32 located on the bolometer film 11. Appropriately design the film type and thickness of the insulating films 130 and 100 on the metal electrode 32 and the bolometer film 11 (and a thin metal infrared absorption film formed on any part of the metal wiring in some cases). By doing so, an optical resonance structure can be configured. In the first embodiment, the degree of the effect of the optical resonance structure changes depending on the height of the cavity 90, and depending on the configuration of the film, the detector unit 11 and the support legs 20 may be warped, so that control is difficult. In the structure of this embodiment, the effect of the optical resonance structure is determined by the thickness of the solid thin film, and is easy to control and stable.
[0014]
Embodiment 3 FIG.
FIG. 7 is a cross-sectional structure along a current path of a pixel of a two-dimensional infrared solid-state imaging device using a thermal infrared detector according to a third embodiment of the present invention. In this embodiment, the bolometer film 11 of the first embodiment shown in FIGS. 1 and 2 is sandwiched between electrodes 31 and 32. That is, in the portion where the bolometer film 11 exists, the infrared detector unit 10 has a structure in which the insulating film 110, the metal electrode 31, the bolometer film 11, the metal electrode 32, and the insulating film 100 are stacked from below, and The two electrodes 31 and 32 are arranged so as to contact almost the entire bolometer film 11.
[0015]
If the upper electrode 32 can be made of a material that transmits infrared rays or can be made thinner enough to transmit infrared rays, the lower electrode 31 can be operated as a reflective film. In this case, although not shown, if a thin-film metal infrared absorbing layer is provided at an arbitrary portion located above the wiring 31, infrared light can be absorbed more efficiently.
If the electrode 32 cannot be made thin enough to transmit infrared light or transmit infrared light sufficiently, the upper electrode (light incident side) 32 can be operated as a reflection film. In this case, though not shown, infrared light can be absorbed more efficiently by providing a thin-film metal infrared absorbing layer on an arbitrary portion located above the wiring 32.
[0016]
In the first to third embodiments, the detector is a bolometer and the wiring is two elements. However, even in the case where another detector that requires three or more wirings is used, in the first to third embodiments, by disposing one or all of the parts on one supporting leg, The number of supporting legs can be reduced as compared with the structure, and the same effect can be obtained.
In the first to third embodiments, the wirings are stacked. However, although the thermal effect is slightly reduced, a similar effect can be obtained even if the wires are arranged in parallel in one support leg in the first to third embodiments.
[0017]
Embodiment 4 FIG.
FIG. 8 is a schematic perspective view showing the structure of one pixel of a two-dimensional solid-state imaging device using a bolometer whose resistance value changes with temperature, which is a thermal infrared detector according to Embodiment 4 of the present invention. FIG. 9 is a schematic sectional view of the two-dimensional infrared solid-state imaging device along a current path. 8 and 9, a signal readout circuit provided on the substrate 1 which is not directly related to the present invention is omitted for simplicity. In the two-dimensional solid-state imaging device, the pixels shown in FIGS. 8 and 9 are two-dimensionally arranged.
In the structure shown in FIGS. 8 and 9, the infrared detector section 10 has the same structure as that of the above-described embodiment, and is similarly provided with a space separated from the substrate 1 made of a semiconductor such as silicon. Are different. A concave portion (hollow portion) 200 is formed on the upper portion of the silicon substrate 1, and the infrared detector 10 is located above the concave portion 200. When there is room in the planar arrangement of the circuit and it is not necessary to stack the readout circuit for each pixel with the detector unit, this simple structure is suitable.
[0018]
One support leg 20 having a large thermal resistance raises the infrared detector unit 10 by lifting it from the silicon substrate 1 and supports it above the substrate 1. However, unlike the above-described embodiment, the infrared detector section 10 and the support leg 20 are formed in the same plane, that is, at the same height with respect to the substrate 1. The infrared detector section 10 and the support legs 20 have a five-layer structure in which an insulating film 110, a metal wiring 31, an insulating film 130, a bolometer film 11, a metal wiring 32 connected thereto, and an insulating film 100 are sequentially stacked from below. . The metal wirings 31 and 32 are electrically connected to both ends of the square bolometer film 11. A plurality of (two in this embodiment) metal wirings 31 and 32 for flowing a current to the bolometer thin film 11 are arranged in one support leg 20.
In the present embodiment, the support leg 20 is attached to the substrate 1 at the intersection of the signal line 50 and the readout circuit control clock bus line 60. At the portion where the support leg 20 is connected to the substrate, the metal wirings 31 and 32 are connected to a signal reading circuit (not shown) on the silicon substrate 1 through the contact holes 121 and 122 provided in the insulating films 130, 110 and 80. Is done. In this signal readout circuit, the metal wiring 31 is connected to a control clock line via a switch transistor, and the metal wiring 32 is connected to a signal line. The switch transistor turns on and off a current flowing through the wirings 31 and 32 and the bolometer thin film 11 according to a clock signal from a control clock line.
[0019]
Embodiment 5 FIG.
FIG. 10 shows a sectional structure along a current path of a pixel of a two-dimensional infrared solid-state imaging device using a thermal infrared detector according to another embodiment 5 of the present invention. The structure of the infrared detector unit 10 and the point in which a plurality of metal wirings 31 and 32 for supplying a current to the bolometer thin film 11 in one support leg 20 are the same as those in the second embodiment. However, it is the same as the fourth embodiment in that the concave portion 200 is formed in the silicon substrate 1 and the support leg 20 is formed at the same height as the infrared detector unit 10. If there is room in the planar arrangement of the circuit and it is not necessary to stack the readout circuit for each pixel with the detector section, this simple structure is suitable.
[0020]
Embodiment 6 FIG.
FIG. 11 shows a cross-sectional structure along a current path of a pixel of a two-dimensional infrared solid-state imaging device using a thermal infrared detector according to another embodiment of the present invention. The structure of the infrared detector unit 10 and the arrangement of a plurality of metal wirings 31 and 32 for passing a current through the bolometer thin film 11 in one support leg 20 are the same as those in the third embodiment. However, it is the same as the fourth embodiment in that the concave portion 200 is formed in the silicon substrate 1 and the support leg 20 is formed at the same height as the infrared detector unit 10. If there is room in the planar arrangement of the circuit and it is not necessary to stack the readout circuit for each pixel with the detector section, this simple structure is suitable.
In the above fourth to sixth embodiments, the detector has a bolometer and has two wires. However, even in the case of another detector that requires three or more wires, in Embodiments 4 to 6, by laminating all or all of the parts, the number of supporting legs can be reduced as compared with the conventional structure. The same effect is obtained.
Further, in the above-described fourth to sixth embodiments, wirings are stacked. However, although the thermal effect is slightly reduced, a similar effect can be obtained even if the wires are arranged in parallel in one support leg in the fourth to sixth embodiments.
[0021]
【The invention's effect】
A first infrared solid-state imaging device according to the present invention includes a thermal type photodetector section supported on a semiconductor substrate by a support leg having a large thermal resistance, and detects a change in characteristics of the thermal type detector due to the incidence of infrared rays. In the infrared solid-state imaging device for detecting through the wiring inside, a plurality of wirings are arranged in at least one supporting leg, so that the number of supporting legs can be reduced, and the amount of heat escaping through the supporting leg can be reduced. High sensitivity can be realized. In addition, since the number of supporting legs can be reduced, the area allocated to the supporting legs can be reduced. As a result, the area of the detector section can be increased and the aperture ratio can be increased, thereby achieving high sensitivity. .
Preferably, in this infrared solid-state imaging device, a plurality of wirings are stacked and arranged in at least one support leg, so that the number of support legs can be reduced.
Preferably, in the infrared solid-state imaging device can be configured a stable optical resonator structures using Runode electrode positioned below the infrared detection film is formed wider than the infrared detection film, a lower electrode as a reflective film.
Preferably, in the infrared solid-state imaging device, an electrode located above the infrared detection thin film among the plurality of electrodes is formed on substantially the entire surface of the infrared detection thin film, and thus the upper or lower electrode is used as a reflection film. it can.
A second infrared solid-state imaging device according to the present invention includes a thermal-type photodetector section supported by supporting legs having a large thermal resistance above a hollow section provided in a semiconductor substrate, and performs thermal-type detection by incidence of infrared rays. An infrared solid-state imaging device that detects a change in the characteristics of a container through wiring in a support leg, and since a plurality of wirings are arranged in at least one support leg, the number of support legs can be reduced, and the number of support legs can be reduced. The amount of heat that escapes can be reduced, and high sensitivity can be achieved. In addition, since the number of supporting legs can be reduced, the area allocated to the supporting legs can be reduced. As a result, the area of the detector section can be increased and the aperture ratio can be increased, thereby achieving high sensitivity. .
Preferably, in this infrared solid-state imaging device, a plurality of wirings are stacked and arranged in at least one support leg, so that the number of support legs can be reduced.
Preferably, in the infrared solid-state imaging device can be configured a stable optical resonator structures using Runode electrode positioned below the infrared detection film is formed wider than the infrared detection film, a lower electrode as a reflective film .
Preferably, in the infrared solid-state imaging device, an electrode located above the infrared detection thin film among the plurality of electrodes is formed on substantially the entire surface of the infrared detection thin film, and thus the upper or lower electrode is used as a reflection film. it can.
[Brief description of the drawings]
FIG. 1 is a schematic perspective view of a pixel of a two-dimensional infrared solid-state imaging device using a thermal infrared detector according to Embodiment 1 of the present invention.
FIG. 2 is a schematic cross-sectional view along a current path of a pixel of a two-dimensional infrared solid-state imaging device using the thermal infrared detector according to the first embodiment.
FIG. 3 is a plan view showing a layout of an upper layer wiring of a pixel of the two-dimensional infrared solid-state imaging device using the thermal infrared detector according to the first embodiment.
FIG. 4 is a plan view showing a layout of a lower wiring of a pixel of the two-dimensional infrared solid-state imaging device using the thermal infrared detector according to the first embodiment.
FIG. 5 is a schematic sectional view along a current path of a pixel of a two-dimensional infrared solid-state imaging device using a thermal infrared detector according to Embodiment 2 of the present invention.
FIG. 6 is a plan view showing a layout of a lower wiring of a pixel of a two-dimensional infrared solid-state imaging device using a thermal infrared detector according to a second embodiment.
FIG. 7 is a schematic cross-sectional view along a current path of a pixel of a two-dimensional infrared solid-state imaging device using a thermal infrared detector according to Embodiment 3 of the present invention.
FIG. 8 is a schematic perspective view of a pixel of a two-dimensional infrared solid-state imaging device using a thermal infrared detector according to Embodiment 4 of the present invention.
FIG. 9 is a schematic cross-sectional view along a current path of a pixel of a two-dimensional infrared solid-state imaging device using a thermal infrared detector according to Embodiment 4 of the present invention.
FIG. 10 is a schematic cross-sectional view along a current path of a pixel of a two-dimensional infrared solid-state imaging device using a thermal infrared detector according to Embodiment 5 of the present invention.
FIG. 11 is a schematic cross-sectional view along a current path of a pixel of a two-dimensional infrared solid-state imaging device using a thermal infrared detector according to Embodiment 6 of the present invention.
FIG. 12 is a perspective view showing the structure of a pixel of a two-dimensional infrared solid-state imaging device using a conventional thermal infrared detector.
FIG. 13 is a plan view showing a pixel structure of a two-dimensional infrared solid-state imaging device using a conventional thermal infrared detector.
[Explanation of symbols]
1 silicon substrate, 10 infrared detector section, 11 bolometer thin film,
21, 22 support leg, 31, 32 metal wiring, 40 readout circuit,
50 signal lines, 60 readout circuit control clock bus lines,
70 reflective film, 80 insulating film, 90 cavity,
100 insulating film, 110 insulating film, 121, 122 contact,
130 insulating film, 200 cavity in substrate.

Claims (8)

A semiconductor substrate ;
A thermal detector section disposed above the semiconductor substrate;
One end is attached to a side portion of the thermal detector section, and extends along the side of the thermal detector section via a gap with the thermal detector section and is supported by a space from the semiconductor substrate. And one supporting leg that
In the support leg, a plurality of wirings forming an electrical path between the thermal detector unit and the semiconductor substrate are laminated via an insulating film,
The width of the support leg is a width defined by the wiring width and a margin of an insulating film pattern wider than the wiring width,
An infrared solid-state imaging device that detects a change in the characteristics of the thermal detector due to the incidence of infrared rays through wiring in the support legs . The thermal detector section includes an infrared detection thin film and a plurality of electrodes electrically connected to the infrared detection thin film, and among the plurality of electrodes, an electrode located below the infrared detection thin film is the electrode. The infrared solid-state imaging device according to claim 1, wherein the infrared solid-state imaging device is formed wider than the infrared detection thin film. The infrared solid-state imaging device according to claim 2, wherein an electrode located above the infrared detection thin film among the plurality of electrodes is formed on substantially the entire surface of the infrared detection thin film. A semiconductor substrate;
It comprises a plurality of pairs of thermal detectors and support legs two-dimensionally arranged on the semiconductor substrate,
In the pair of the thermal detector section and the support leg, one end of the support leg is attached to a side of the thermal detector section, and the thermal leg detection is performed through a gap with the thermal detector section. A plurality of wirings extending along the sides of the detector and supporting the semiconductor substrate with a space therebetween, and forming an electric path between the thermal detector unit and the semiconductor substrate in the support leg; Laminated via a film, the width of the support leg is a width defined by the wiring width and a margin of an insulating film pattern wider than the wiring width,
  A two-dimensional infrared solid-state imaging device that detects a change in characteristics of a thermal detector due to the incidence of infrared rays through wiring in a support leg. A semiconductor substrate having a cavity on its surface;
A thermal detector disposed above the semiconductor substrate;
One supporting leg for supporting the thermal detector with a space above the cavity of the semiconductor substrate,
The support leg has one end attached to a side portion of the thermal detector portion, and extends along the side portion through a gap with the thermal detector portion to support the thermal detector portion. ,
In the support leg, a plurality of wirings forming an electrical path between the thermal detector unit and the semiconductor substrate are stacked via an insulating film,
The width of the support leg is a width defined by the wiring width and a margin of an insulating film pattern wider than the wiring width,
An infrared solid-state imaging device that detects changes in the characteristics of a thermal detector due to the incidence of infrared rays through wiring in the support legs. The thermal detector section includes an infrared detection thin film and a plurality of electrodes electrically connected to the infrared detection thin film, and among the plurality of electrodes, an electrode located below the infrared detection thin film is the electrode. The infrared solid-state imaging device according to claim 5, wherein the infrared solid-state imaging device is formed wider than the infrared detection thin film. The infrared solid-state imaging device according to claim 6, wherein an electrode located above the infrared detection thin film among the plurality of electrodes is formed on substantially the entire surface of the infrared detection thin film. A semiconductor substrate having a plurality of cavities on its surface;
It comprises a plurality of pairs of thermal detectors and support legs two-dimensionally arranged on the semiconductor substrate. ,
The plurality of cavities are provided on the surface of the semiconductor substrate for each of a pair of thermal detectors and a support leg,
In the pair of the thermal detector and the support leg, the support leg supports the thermal detector with a space above the cavity, and the support leg includes the thermal detector. One end is attached to a side portion of the thermal type detector portion, the thermal type detector portion extends along the side portion through a gap to support the thermal type detector, and the thermal type detector is provided in the support leg. A plurality of wirings forming an electric path between the portion and the semiconductor substrate are laminated via an insulating film, and the width of the support leg is defined by the wiring width and a margin of an insulating film pattern wider than the wiring width. Is the width
A two-dimensional infrared solid-state imaging device that detects a change in characteristics of a thermal detector due to the incidence of infrared rays through wiring in a support leg.

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