TW200944068A - Microwave plasma processing system and method for using microwave plasma processing system - Google Patents

Microwave plasma processing system and method for using microwave plasma processing system

Info

Publication number
TW200944068A
TW200944068A TW098105139A TW98105139A TW200944068A TW 200944068 A TW200944068 A TW 200944068A TW 098105139 A TW098105139 A TW 098105139A TW 98105139 A TW98105139 A TW 98105139A TW 200944068 A TW200944068 A TW 200944068A
Authority
TW
Taiwan
Prior art keywords
microwave
container
plasma processing
processing system
gas
Prior art date
Application number
TW098105139A
Other languages
English (en)
Inventor
Masaki Hirayama
Tadahiro Ohmi
Original Assignee
Tokyo Electron Ltd
Univ Tohoku
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Univ Tohoku filed Critical Tokyo Electron Ltd
Publication of TW200944068A publication Critical patent/TW200944068A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32247—Resonators
    • H01J37/32256—Tuning means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
TW098105139A 2008-02-27 2009-02-18 Microwave plasma processing system and method for using microwave plasma processing system TW200944068A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008046639A JP5103223B2 (ja) 2008-02-27 2008-02-27 マイクロ波プラズマ処理装置およびマイクロ波プラズマ処理装置の使用方法

Publications (1)

Publication Number Publication Date
TW200944068A true TW200944068A (en) 2009-10-16

Family

ID=41081670

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098105139A TW200944068A (en) 2008-02-27 2009-02-18 Microwave plasma processing system and method for using microwave plasma processing system

Country Status (4)

Country Link
JP (1) JP5103223B2 (zh)
KR (1) KR101048942B1 (zh)
CN (1) CN101521151B (zh)
TW (1) TW200944068A (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI632587B (zh) * 2013-07-16 2018-08-11 日商東京威力科創股份有限公司 Inductively coupled plasma processing device
TWI724258B (zh) * 2016-11-30 2021-04-11 日商東京威力科創股份有限公司 電漿處理裝置

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011055644A1 (en) 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN101775580B (zh) * 2010-01-05 2012-07-04 青岛科技大学 一种氮化铝薄膜的微波等离子体制备方法
JP5582816B2 (ja) * 2010-02-19 2014-09-03 東京エレクトロン株式会社 カバー固定具及び誘導結合プラズマ処理装置
JP6046052B2 (ja) * 2011-12-12 2016-12-14 東京エレクトロン株式会社 プラズマ発生用アンテナ、プラズマ処理装置及びプラズマ処理方法
JP5953057B2 (ja) * 2012-02-06 2016-07-13 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP6230900B2 (ja) * 2013-12-19 2017-11-15 東京エレクトロン株式会社 基板処理装置
CN114127902A (zh) * 2019-07-15 2022-03-01 应用材料公司 用于平板显示器的大面积高密度等离子体处理腔室
JP7246802B1 (ja) 2022-11-16 2023-03-28 東亜電子機材株式会社 プラズマ生成装置用のガス流量調整パイプ

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07135094A (ja) * 1993-11-11 1995-05-23 Mitsubishi Heavy Ind Ltd マイクロ波誘導プラズマへの原料供給方法及び装置
JPH10158847A (ja) * 1996-12-06 1998-06-16 Toshiba Corp マイクロ波励起によるプラズマ処理装置
JP3645768B2 (ja) * 1999-12-07 2005-05-11 シャープ株式会社 プラズマプロセス装置
JP2002280196A (ja) * 2001-03-15 2002-09-27 Micro Denshi Kk マイクロ波を利用したプラズマ発生装置
JP3720005B2 (ja) * 2002-03-07 2005-11-24 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
JP4159845B2 (ja) * 2002-10-07 2008-10-01 東京エレクトロン株式会社 プラズマ処理装置
JP2004186303A (ja) * 2002-12-02 2004-07-02 Tokyo Electron Ltd プラズマ処理装置
JP2004200307A (ja) * 2002-12-17 2004-07-15 Tokyo Electron Ltd プラズマ処理装置
JP2004259663A (ja) * 2003-02-27 2004-09-16 Shimadzu Corp プラズマ処理装置
JP5013393B2 (ja) * 2005-03-30 2012-08-29 東京エレクトロン株式会社 プラズマ処理装置と方法
CN100593361C (zh) * 2005-03-30 2010-03-03 东京毅力科创株式会社 等离子体处理装置和方法
JP4781711B2 (ja) * 2005-05-12 2011-09-28 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
KR100877404B1 (ko) * 2005-08-10 2009-01-07 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치의 제어 방법, 플라즈마 처리 장치 및 기록 매체
JP5068458B2 (ja) * 2006-01-18 2012-11-07 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
JP4915985B2 (ja) * 2006-02-06 2012-04-11 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
JP5069427B2 (ja) * 2006-06-13 2012-11-07 北陸成型工業株式会社 シャワープレート、並びにそれを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI632587B (zh) * 2013-07-16 2018-08-11 日商東京威力科創股份有限公司 Inductively coupled plasma processing device
TWI724258B (zh) * 2016-11-30 2021-04-11 日商東京威力科創股份有限公司 電漿處理裝置

Also Published As

Publication number Publication date
KR101048942B1 (ko) 2011-07-12
CN101521151A (zh) 2009-09-02
JP2009205921A (ja) 2009-09-10
KR20090092720A (ko) 2009-09-01
CN101521151B (zh) 2011-08-24
JP5103223B2 (ja) 2012-12-19

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