TW200942978A - Exposure method, exposure apparatus, and method for producing device - Google Patents

Exposure method, exposure apparatus, and method for producing device

Info

Publication number
TW200942978A
TW200942978A TW097149567A TW97149567A TW200942978A TW 200942978 A TW200942978 A TW 200942978A TW 097149567 A TW097149567 A TW 097149567A TW 97149567 A TW97149567 A TW 97149567A TW 200942978 A TW200942978 A TW 200942978A
Authority
TW
Taiwan
Prior art keywords
pattern
area
partial
pattern area
exposure
Prior art date
Application number
TW097149567A
Other languages
English (en)
Other versions
TWI440990B (zh
Inventor
Kei Nara
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of TW200942978A publication Critical patent/TW200942978A/zh
Application granted granted Critical
Publication of TWI440990B publication Critical patent/TWI440990B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0277—Electrolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW097149567A 2007-12-20 2008-12-19 Exposure method and apparatus, and component manufacturing method TWI440990B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US833607P 2007-12-20 2007-12-20
US12/261,741 US8917378B2 (en) 2007-12-20 2008-10-30 Exposure method, exposure apparatus, and method for producing device with plurality of projection optical systems and pattern having first partial pattern area and second partial area having overlaid area with first partial pattern area

Publications (2)

Publication Number Publication Date
TW200942978A true TW200942978A (en) 2009-10-16
TWI440990B TWI440990B (zh) 2014-06-11

Family

ID=40339663

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097149567A TWI440990B (zh) 2007-12-20 2008-12-19 Exposure method and apparatus, and component manufacturing method

Country Status (8)

Country Link
US (1) US8917378B2 (zh)
EP (1) EP2238514A1 (zh)
JP (1) JP5412814B2 (zh)
KR (1) KR101605567B1 (zh)
CN (2) CN102890431B (zh)
HK (1) HK1182184A1 (zh)
TW (1) TWI440990B (zh)
WO (1) WO2009081676A1 (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8253923B1 (en) * 2008-09-23 2012-08-28 Pinebrook Imaging Technology, Ltd. Optical imaging writer system
CN102419334A (zh) * 2011-09-13 2012-04-18 浙江中控太阳能技术有限公司 一种能同时检测平面镜平整度和清洁度的装置及方法
CN103869602A (zh) * 2012-12-14 2014-06-18 京东方科技集团股份有限公司 一种掩膜板及其实现曝光接合的方法
CN103969958B (zh) * 2013-01-25 2016-03-30 上海微电子装备有限公司 一种多曝光视场拼接系统和方法
JP5344105B1 (ja) 2013-03-08 2013-11-20 ウシオ電機株式会社 光配向用偏光光照射装置及び光配向用偏光光照射方法
US9229332B2 (en) * 2013-09-18 2016-01-05 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and methods for high-throughput and small-footprint scanning exposure for lithography
CN104749902B (zh) * 2013-12-31 2017-02-15 上海微电子装备有限公司 掩模板面型整形装置
JP5773095B1 (ja) * 2015-02-10 2015-09-02 ウシオ電機株式会社 光照射装置および光照射方法
CN106802538B (zh) * 2017-03-16 2019-01-29 无锡影速半导体科技有限公司 超大板直写式光刻机扫描曝光方法
US10474027B2 (en) 2017-11-13 2019-11-12 Macronix International Co., Ltd. Method for forming an aligned mask

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5729331A (en) * 1993-06-30 1998-03-17 Nikon Corporation Exposure apparatus, optical projection apparatus and a method for adjusting the optical projection apparatus
JP3505813B2 (ja) * 1994-11-01 2004-03-15 株式会社ニコン 走査型露光装置及び走査露光方法
DE19757074A1 (de) 1997-12-20 1999-06-24 Zeiss Carl Fa Projektionsbelichtungsanlage und Belichtungsverfahren
JP2000331909A (ja) * 1999-05-19 2000-11-30 Nikon Corp 走査型露光装置
JP4362999B2 (ja) * 2001-11-12 2009-11-11 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
TW200307184A (en) * 2002-05-23 2003-12-01 Sanei Giken Co Ltd Scan exposure method and scan exposure apparatus
JP2004335864A (ja) * 2003-05-09 2004-11-25 Nikon Corp 露光装置及び露光方法
CN101385123B (zh) 2006-02-16 2010-12-15 株式会社尼康 投影光学系统、曝光装置及方法、光罩及显示器的制造方法
JP4984810B2 (ja) 2006-02-16 2012-07-25 株式会社ニコン 露光方法、露光装置及びフォトマスク
JP4952182B2 (ja) * 2006-03-20 2012-06-13 株式会社ニコン 走査型露光装置、マイクロデバイスの製造方法、走査露光方法、及びマスク

Also Published As

Publication number Publication date
TWI440990B (zh) 2014-06-11
CN102890431B (zh) 2015-09-09
EP2238514A1 (en) 2010-10-13
US20090257033A1 (en) 2009-10-15
KR101605567B1 (ko) 2016-03-22
CN101918897B (zh) 2012-11-14
JP2009151298A (ja) 2009-07-09
CN102890431A (zh) 2013-01-23
HK1182184A1 (zh) 2013-11-22
KR20100094451A (ko) 2010-08-26
JP5412814B2 (ja) 2014-02-12
CN101918897A (zh) 2010-12-15
US8917378B2 (en) 2014-12-23
WO2009081676A1 (en) 2009-07-02

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