200941760 九、發明說明： 【發明所屬之技術領域】 本案係為一種光二極體封裝結構，尤指可透過一透光 板完成電性連接以及光學特性的一種光二極體結構。 【先前技術】 發光二極體（Light Emitting Diode，簡稱 LED)係 利用半導體材料中的電子電洞結合時能量帶（Energy ❹ Gap)位階之改變，以發光顯示其所釋放出的能量，具體 積小、壽命長、驅動電壓低、耗電量低、反應速率快、耐 震性佳等優點，為曰常生活中各種應用設備中常見的元 件。而發光二極體（LED)在工作時，其所產生的熱能相 ' 當的大，造成發光二極體（LED)周圍的溫度上升，尤其 - 是對於咼功率發光二極體來說，其在正常工作的情況下所 發出之熱能更是比一般的發光二極體（LED)要高出許 多，所以在發光二極體的封裝製作過程當中，一定要考慮 © 到發光二極㈣裝結構散熱關題，狀止功時所產^ 的溫度過高而燒毁發光元件或破壞其特性。 有鑑於此，在台灣第1258871號專利中 絡忠一搞磁坡έ士接Jife &T7、l 4 ’提出了一種200941760 IX. INSTRUCTIONS: [Technical Field of the Invention] The present invention is a photodiode package structure, especially a photodiode structure that can be electrically connected and optically permeable through a light transmissive plate. [Prior Art] A Light Emitting Diode (LED) is a type of energy 释放 Gap that is converted by electron holes in a semiconductor material to display the energy released by the illuminating, specific product. Small, long life, low driving voltage, low power consumption, fast response rate, good shock resistance, etc., are common components in various applications in everyday life. When the light-emitting diode (LED) is in operation, the thermal energy generated by it is large, causing the temperature around the light-emitting diode (LED) to rise, especially - for the power-emitting diode, In the case of normal operation, the heat energy emitted is much higher than that of a general light-emitting diode (LED). Therefore, in the process of packaging the light-emitting diode, it is necessary to consider © to the light-emitting diode (four) structure. The heat is off, and the temperature produced when the power is stopped is too high to burn the light-emitting element or destroy its characteristics. In view of this, in the Taiwan No. 1258871 patent, Luo Zhongyi engaged in the magnetic slope gentleman to Jife & T7, l 4 ’ proposed a kind
6 200941760 所完成，在該導熱倾12下方係形成有m間i4， »亥奋置m 14係可與-熱導管16之形狀相配合，以利於 供該熱導官16絲於其巾；而該縣結構丨並包含有一 發光二極體晶片17,其係利用銀膠或軟谭（sddering)方 式震設於該導熱載體12上；在該導熱紐12上且位於該 發光一極體晶片17之二側分別設有—引腳U，該等引腳 11亦可位於該發光二極體晶片17之同一側；另有至少二 ，線13，其係可為金線或轉，利用—封裝打線方法將 该發光二極體晶片17連接至該等引腳^之焊點上，以形 成電性連接；最後封裝賴15包覆該發光二極體 社7、該等引腳11與引線13，進而完成該發光二極體封震 、-。構 1 〇6 200941760 completed, under the thermal conductivity tilt 12 is formed with m between i4, » Haifu set m 14 system can be matched with the shape of the heat pipe 16 to facilitate the heat guide 16 silk in its towel; The structure of the county includes a light emitting diode chip 17 which is shocked on the heat conducting carrier 12 by means of silver glue or sddering; on the heat conducting core 12 and on the light emitting body wafer 17 The second side is respectively provided with a pin U, and the pins 11 may also be located on the same side of the LED chip 17; and at least two, the line 13, which may be a gold wire or a turn, using a package The wire bonding method connects the LED chip 17 to the solder joints of the pins to form an electrical connection; finally, the package 15 covers the LEDs 7, the pins 11 and the leads 13 And completing the light-emitting diode sealing, -. Structure 1
承上述之說明，仙可以清楚的看ώ該發光二極體封 I。構1主要是·該導熱載體12來岐安裝該熱導管 6 ’以增加熱輸送路徑，降低触，並且有㈣分離了熱 =路徑以及電傳導路徑，達到整個封裝結構,，熱電分離，, 如此-來，射杨解決發光二極财工作時的 . 口 w·3唬專利中也提出了一種半導 $光元件縣結構用來解決雜結構的散制題。請參 H其係—㈣半導體發光元件封裝結構2示意 圖中我們可以清楚的看出該封裝結構2包含有一基 =二下底座&至少—半導體發光晶粒23以及-封 ，其中該基板21定義有一頂表面211，該頂表 7 200941760 面211之上係設有複數個外部電極27，該下底座22定義 有-第-表面22卜該至少一半導體發光晶粒23係 其底部231之内部電極固定於該下底座22之該第-表面 221。該基板21之該頂表面211係形成有-第-凹陷部 2111 ’該基板21上更定義—底表面212，該基板之談 絲面212係形成有—第二凹陷部2112，且該第—凹 部2m與該第二凹陷部2112相連接，而該下底座^係 鼓入於該第二凹陷部2112中，該下底座22更定義有一第 二表面222，該下底座22之該第―表面221㈣於該第 -凹陷部2111之内部，且該頂表面211沿著該第—凹陷 部2111之邊緣形成—凸部26。該至少—半導體發光晶粒 23具有一底部231，該底部131係固定於該下底座22之 該第-表面221並暴露於該第一凹陷部2111内部之部 分。該封裝材質2 4係用於填充該凸部2 6之内部，用以覆 蓋該至少一半導體發光晶粒23。該至少一半導體發光晶 粒23具有内部電極，並透過線路與位於該頂表面2ιι之 外部電極27導通。另外，該封裝結構2更包含有一導熱 膠體25，該導熱膠體25係置於該下底座22之該第一表 面221與該第一凹陷部2111之底部之間，以結合該下底 座22之該第一表面221與該第一凹陷部2111之底部，意 即用以連結該基板21與該下底座22。因此，利用上述之 該發光二極體封裝結構2便可有效的排除半導體發光元 件（發光二極體晶粒）在工作時所產生之大量熱能並降低 熱阻。 200941760 然而’上朗提出的封裝結構軸皆能夠有效 =封裝結構”熱電分離’，的效果，進一步完成加速散: 的的，但為了完成此目的，相對的也增加了在製作、 封裝結構的過程巾製作程相繁覆，如此—來，便ς 發光二極體在製作成本上的提高，耻，如 = =段所產生的缺失，進行結構上的改良以及封裝流= 間化係為發展本案之最主要的目的。 ❹ 【發明内容】 本案係為一種光二極體封裝結構，其包含：一封裝基 座’複數個光二極體結構，其係組設於該封裝基座之—第 -表面上’·-第-導電結構組，其係形成於該封裝基座之 . 該第一表面上，且該第一導電結構組分別連接於該等光二 顧結構之兩電極；—透光板，其係以-第二表面覆蓋 於該封裝基座之該第-絲，麟料光二極體結構所發 出之一光線能夠藉由該透光板形成一光學路徑；以及一第 © n轉組’其伽彡成於該透光板之該第二表面上，當 該透光板覆蓋於該封裝基座時，該第二導電結構組與該第 一導電結構組相互鍵結，且該第二導電結構組部份露出於 該封裝基座外。 根據上述構想，本案所述之光二極體封裝結構，其中 5亥封裝基座係可為一單面雙侧鋁基板(MCPCB)、一石夕基 板、一Al2〇3 基板、一 A1N (Aluminum-Nitride)基板或一 * 碳化矽基板。 根據上述構想’本案所述之光二極體封裝結構，其中 200941760 組設於該封祕座找第—表面上之魏個光二極體結 構係為一發光二極體。 13 根據上賴想’本案職之光二極體封裝結構，其中 該等光二極體結構係可以—串聯方式或—並聯方式來完 成彼此間的電性連接。 根據上述構想，本案所述之光二極體封裝結構，其中 該第-導電結構組射以―鍵結m打線方式連接 於該專光一極體結構之兩電極。 根據上述構想，本案所述之光二極體封裝結構，其中 該等光二極體結構之兩電極分別係為一 p態電極與一 n 態電極之組合。 根據上述構想，本案所述之光二極體封裝結構，其中 邊第一導電結構組與該第二導電結構組係可以一金材 質、一錫材質或上述合金所完成。 根據上述構想，本案所述之光二極體封裝結構，其中 该封裝基座之該第一表面係可形成有複數個凹槽，用承載 該等光二極體結構。 根據上述構想，本案所述之光二極體封裝結構，其中 該透光板係具有一透孔，使得該等光二極體結構所發出之 該光線能夠藉由該透孔透出，且該透孔之側壁與該等凹槽 之側壁角度相同。 根據上述構想’本案所述之光二極體封裝結構，其中 該透光板係可為一玻璃透光板或一壓克力透光板。 根據上述構想’本案所述之光二極體封裝結構，其中 200941760 該透光板係經由一霧化處理或一擴散處理。 、根據上述構想’本案所述之光二極體封裝結構，其中 該透光板係具有—透鏡，使得該等光二極構所發出、之 該光線能夠藉由該透鏡形成該光學路徑。 —、根據上述構想，本案所述之光二極體封裝結構，其中 該透光板係可在局部區域或全部區域設置有—螢光粉。 .根據上述構想，本案所述之光二極體封裝結構/更包 含：一封裝材料，其係披覆於該等光二極體結構上，用以 將該等光二極體結_定於崎錄座上，·以及-散埶纤 構’其係設置於該封震基座之一第三表面上，該等光二 體結構發出該光朗產生之熱能謂㈣散熱結構導出°。 =上述縣，本案職之光二鋪職結構，复中 m料係可為-環氧樹脂、—销脂或—發光材料^ 述構想，本㈣述之光二極贿裝結構，复中 该封裝材料係可以一凸面形狀 ，、中 披覆於該等光二極體結構p面^千面形狀 根據上述構想，本案所述之光二極體封 該第二導電結構組可藉、 :中 電子裝置完成電性連接。導線或—電路板來與其它 本案另一方面係為一種光二 法，其至少包含下列步驟：提供一封=震;^構製作方 座之一势* 封裝基座’於該封震基 組分別連接柯料—導電結構 接於為4光一極體結構之兩電極；提供-透光 11 200941760 板’該透光板之一第二表面上具有一第二導電結構組；以 及進行一覆蓋製程，使該該透光板之該第二表面之該第二 導電結構組與該第一導電結構組相互鍵結，且該第二導電 結構組部份露出於該封裝基座外。 根據上述構想’本案另一方面所述之光二極體封裝结 構製作方法，其中該封裝基座係可為一單面雙侧鋁基板 (MCPCB)、一 矽基板、一 Al2〇3 基板、一 AlN(Aluminum-Nitride)基板或一碳化矽基板。 根據上述構想’本案另一方面所述之光二極體封裝結 構製作方法，其纽設於該㈣基座之該第—表面上之複 數個光二極體結構係為一發光二極體。 根據上述構想，本案另一方面所述之光二極體封裝結 構製作方法，其中該等光二極體結構係可以一串聯方式或 一並聯方式來完成彼此間的電性連接。 根據上述構想’本案另一方面所述之光二極體封裝結 構製作方法，其中該第一導電結構組係可以一鍵結方式或 一打線方式連接於該等光二極體結構之兩電極。 根據上述構想’本案另—方面所述之光二極體封裝結 構製作方法’其中料光二_結構之兩電極分別係為-P態電極與一 η態電極之組合。 根據上述構想’本案另一方面所述之光二極體封裝結 構製作方法，其中該第一導電結構組與該第二導電結構組 係可以-金材質、—錫㈣或上述合金所完成。 根據上述構想，本案另—方面所述之光二極體封裝結 12 200941760 構製作方法’其中該封裝基座之該第一表面係可形成有複 數個凹槽’用以承載該等光二極體結構。 根據上述構想’本案另一方面所述之光二極體封裝結 構製作方法，其中該透光板係具有一透孔，使得該等光二 極體結構所發出之該光線能夠藉由該透孔透出，且該透孔 之侧壁與該等凹槽之侧壁角度相同。 根據上述構想，本案另一方面所述之光二極體封裝結 構製作方法，其中該透光板係可為一玻璃透光板或一壓克 力透光板。 根據上述構想，本案另一方面所述之光二極體封裝結 構製作方法’其中該透光板係經由一霧化處理或一擴散處 理。 根據上述構想，本案另一方面所述之光二極體封裝結 構製作方法，其中該透光板係具有一透鏡，使得該等光二 極體結構所發出之該光線能夠藉由該透鏡形成該光學路 徑。 根據上述構想’本案另一方面所述之光二極體封裝結 構製作方法，其中該透光板係可在局部區域或全部區域設 置有—螢光粉。 根據上述構想’本案另一方面所述之光二極體封襞結 構製作方法，更包含下列步驟：披覆一封裝材料於該等光 二極體結構上，用以將該等光二極體結構固定於該封裝基 座上。 、土 根據上述構想，本案另一方面所述之光二極體封裝結 13 200941760 構製作方法，其中該封襞材料係可為一環氧樹脂、〜矽 脂或一發光材料。 根據上述構想’本案另一方面所述之光二極體封骏绛 構製作方法，其中該封襞材料係可以一凸面形狀、—四面 形狀或一平面形狀披覆於該等光二極體結構上。 ，根據上述構想’本案另一方面所述之光二極體封敦鈐 構製作方法，更包含下列步驟：設置一散熱結構於該封裝 基座之一第二表面上，使得該等光二極體結構發出該光線 所產生之熱能可藉由該散熱結構導出。 v 根據上述構想’本案另—方面所述之光二極體封裝結 構製作方法’其巾該第二導f結構組可藉由_電導線或一 電路板來與其它電子裝置完成電性連接。 【實施方式】 請參見第三圖（〇,其係為本案為改善習用技術手段 之缺失所發展出m體封裝結構之第—較佳實施例 不意圖。從®巾我們可以清楚的看出該光二極贿襄結構 3包含有-封裝基座3G、複數個光二極體結構31、一第 -導電結構組32、-透光板33、_第二導電結構組从 以及一散熱結構35，其中該封裝基座30之第-表面301 _成有複數個凹槽（Cavity) 31()，㈣承載該等光二 =體結構’而該封裝基座3㈣可為—單面雙娜基板 CPCB)、-石夕基板、_ Ai2〇3基板一 撕ide)基板或一碳切基板，該等光二極 體結構餘設於該封裝基座3〇之—第一表面灿上， 200941760 該第-導電結構組32係形成於該封裝基座3()之該第一表 面3〇1並且分別以-打線之方式(也可以一鍵結之連 接於該等光二極體結構的兩電極；該透光板％係以一第 一表面331覆蓋於該封裝基座％之該第一表面3〇1，使 得該等光二極體結構31所發出之—光線能夠藉由該透光 板33形成一光學路徑，而該透光板33之該第一表面33! 形成有第二導電結構34’#該透光板33之該第一表面 331覆蓋於該封裝基座3〇之該第一表面如時，該第二 導電結構組34與該第一導電結構組％能夠相互鍵結，且 該第二導電結構组34在與該第—導電結構組職結後會 部份露出於該縣基座料；該導齡構％係設置於該 封裝基座30之-第二表面3〇2上，使該等光二極體結構 1發出該2線所產生之熱能可藉由該散熱結構35導出。 ▲在先前技術中所提到的習用封裝結構雖然皆能夠有 效的達到”熱電分離，，的效果進而完成加速散熱的目的，但 相對的也增加了在製作整個封裝結構的過程巾製作程序 的繁覆’因而造成製作成本的大幅提高，而本案所述之該 光二極體封裝結構3最主要就是以覆蓋該透光板33的方 j來取代封踢的這個製作步驟，以及在該透光板％的第 :表面3S1上形成有該第二導電結構組％，使得當該透 先板33錢於朗裝基座3㈣，便可以_如同習用技 術使用封膠可達朗—般的關功能’且更因為該透光板 ^上形成有該第二導電結構34而具有導電之功能，如此 —來，本案所述之縣二極贿裝結構3不但與習用技術 15 200941760 同樣充份的達到了”熱電分離，，的效果1在製作過程的程 序步驟上也比習用技術來得更加的簡化。 而上述組設於該封裝基座30之該第一表面301上之 該等光二極體結構31係為一發光二極體（Light Emitting Duxle) ’且該等光二極體結構31之兩電極分別係為一 p 態電極與-η態電極之组合，而該第—導電結構Μ與該 第二導電結構34係可以—金材f、—錫材質或該金材質 該錫材質兩者的合金所完成，該透光板％係可使用全 部，光或局部透光之-玻璃透光板或一壓克力透光板，或 者疋可在該透光板33上進行—霧化處理…擴散處理以 達成局部透光的魏，也可在該透光板33的局部區域或 全部區域設置有-螢光粉（在本圖中未示出）。 如第二圖⑻所TF ’本案所述之該光二極體封裝結 構^雖然疋以覆蓋該透光板33來達細似娜的效果， 但=本案所述之誠二極體結構3還是可以材質為一環 氧樹脂、一石夕樹月旨或一發光材料的封裝材料36來對該等 光f極體結構31進行縣，使贿裝㈣36能夠披覆於 ，等光二歸結構31上，讓該等光二極體結構 31能夠固 定於該封録座3G上以及改變發出光線的顏色。 如第二圖（c)所示，本案所述之該光二極體封裝結 構3除了如第三圖（a)所示之構造外，也可不必於該封 裝基座30上形成有該凹槽（Cavity)31〇而直接的將該等 光-極體結構31組設於其上’如此所完成的光二極體封 裝結構也同樣具有本案所要表達之特徵。 16 200941760 如第三圖（d)所示，本案所述之該光二極體封裝結 構3可藉由該透光板33上所形成之該第二導電結構34 以一電導線320與其它電子裝置3〇〇完成電性連接\或也 可如第二圖（e)所示以一電路板330來與其它電子裝置 3〇〇完成電性連接。 再如第三圖（f) (g)所示，本案所述之該光二極體 封裝結構3所包含之該等光二極體結構31係可以一串聯 方式（如第三圖(f)所示）或—並聯方式（如第三圖⑻所 示）完成彼此間的電性連接，而本案所述之該透光板％ 上所具有之該第二導電結構組34便能姻應該等光二極 體31之;^電性連接的方式而事先於該第二導電結構植 34中佈置好所需要_電氣走線，如此—來，當該透光 板33覆蓋關時組設有數量較多的光二極體結構31之封 裝基座3G上時，也能夠以較快速簡便的製作程序來完成。 請參見第四圖（a)至第四圖⑺，其係為本案所述 之光二極體封裳結構製作方法流程示意圖。從圖中我們可 以清楚的看出’首先提供一封裝基座3〇 (如第四圖⑻所 厂、）該封裝基座30上形成有複數個凹槽31〇;於該封裝 基座30之第-表面3G1组設複數個光二極體結構η (如 第四_)所示）；於該封震基座3〇之第-表面301形成 該第-導電結構組32’且該第—導電結構組32分別連 t該等光二極體結構31之兩電極（如第四_所示 提供-透光板33 (如第賴(d)所示），該透光板％之第 表面331上具有該第—導電結構組％ ·進行一覆蓋製 200941760 程（如第四_)所示），使該該透光板33之第-表面331 之該第二導電結構組34與該第一導電結構組^相互鍵 結’且該第二導電結構組34部份露封裝基 外；最後於該封裝基座3〇之第二表面3〇2設置該導熱幹 構35 (如第四圖(f))，使得該等光二極體結構31所產 之熱能藉由該導熱結構35導出。經由上述的製作步驟便 可進-步成如第三圖（a)所示之光二極體封裝結構3。 經由上述技術說明’我們可以清楚的發現本案所述之 光二極體封裝結構最主要的特徵就是在於在封裝基座上 覆蓋透光板以達成與習用技術所使用的封膠一樣的效 果’並且在透光板的表面上更直接形成有導電結構組的構 k，使透光板更具有導電的功能而且製作方便，因此，利 用本案所述之光二極體封裝結構確實改善了習用技術手 ’又所產生的製程煩瑣的缺失，進而完成本案之最主要的目 的。 請參見第五圖（a)(b)(c)’其係為本案為改善習用 技術手段之缺失所發展出一光二極體封裝結構之第二較 佳實施例示意圖。從圖中我們可以清楚的看出該光二極體 封裝結構4包含有一封裝基座40、複數個光二極體結構 41、一第一導電結構組42、一透光板43、一第二導電結 構組44、一散熱結構45以及一封裝材料46，而本實施例 與第一較佳實施例最大的不同在於在本例中該透光板43 係具有一透孔431 ’且該透孔431之侧壁4310傾斜角度 與該封裝基座40之該第一表面401上之凹槽410傾斜角 200941760 ft目同’當具有該透孔431之該透光板43覆蓋於該封裝 〇上後，組設於該封裝基座40上的該等光二極體結 構41所發出之光線可藉由該透光板43所具有之該透孔 431透出’而在本實麵巾由於該透光板43具有該透 孔的構ie因此’在整個封裝結構上就必需要配合封谬這 個步驟’纽是德料二滅賴41上龍上該封裝 材料46 ’以達成該等光二極體構造41光學特性的需求， 而在第五圖U)中’該封裝材料46是以-凸面形狀披覆 於《亥等光一極體結構41上，另外也可以如第五圖⑻與 第五圖（e)所示’以—平面形狀或__凹面形狀將該封裝 材料46披覆於該等光二極結構41上，以因應該等光二極 體結構不同光學特性的需求。而在本實施例的部分技術手 段皆與第一較佳實施例相同，故在此不予贅述。 請參見第六圖’其係為本案為改善習用技術手段之缺 失所發展出一光二極體封裝結構之第三較佳實施例示意 圖。從圖中我們可以清楚的看出該光二極體封裝結構5 包含有一封裝基座50、複數個光二極體結構51、一第一 導電結構組52、一透光板53、一第二導電結構組％以及 一散熱結構55，而本實施例與第一較佳實施例與第二較 佳實施例最大的不同在於該透光板53在本例中係具有一 透鏡530，當具有該透鏡530之該透光板53覆蓋於該封 裝基座50上後’組s又於该封裝基座50上的該等光二極體 結構51所發出之光線可藉由該透光板53所具有之該透鏡 530形成該光學路徑’而該透鏡530除了可一體成型於該 200941760 透光板53外，另外也可以如第六圖右側所示，將該透鏡 530以組裝的方式外加於該透光板53上。而在本實施例 的部分技術手段皆與第一較佳實施例相同’故在此不予贅 述。 综合以上技術說明，利用本案所述之光二極體封裝結 構’在整個封裝的製作過程不但有效的簡化了整個製作流 程，另外，由於製程的簡化，相對的也讓整個封裝製作的 成本大幅的降低，如此一來，本案發明確實改善了在先前 技術中習用技術手段所產生在製程上較為繁複以及成本 過高的問題與缺失，進而完成發展本案之最主要的目的。 而本發明得由熟習此技藝之人士任施匠思而為諸般 修飾，然皆不脫如附申請專利範圍所欲保護者。 【圖式簡單說明】 本案得藉由下列圖式及說明，俾得一更深入之了解：According to the above description, Xian can clearly see the LED package I. The structure 1 is mainly: the heat conducting carrier 12 is used to mount the heat pipe 6' to increase the heat transport path, reduce the contact, and (4) separate the heat = path and the electrical conduction path to reach the entire package structure, thermoelectric separation, and so - Come, shoot Yang to solve the problem of illuminating the second pole. The mouth w·3 唬 patent also proposed a semi-conducting $ light element county structure used to solve the heterogeneous structure of the problem. Please refer to H-(4) Schematic diagram of the semiconductor light-emitting device package structure 2, we can clearly see that the package structure 2 comprises a base = two lower bases & at least - semiconductor light-emitting dies 23 and - seal, wherein the substrate 21 is defined There is a top surface 211. The top surface 7 200941760 has a plurality of external electrodes 27 on the surface 211. The lower base 22 defines a surface-surface 22 and the at least one semiconductor light-emitting die 23 is an internal electrode of the bottom 231 thereof. The first surface 221 is fixed to the lower base 22. The top surface 211 of the substrate 21 is formed with a first-depression portion 2111'. The substrate 21 is further defined with a bottom surface 212. The substrate surface 212 is formed with a second recess portion 2112, and the first portion The recess 2m is connected to the second recess 2112, and the lower base is bulged in the second recess 2112. The lower base 22 further defines a second surface 222. The first surface of the lower base 22 221 (d) is inside the first recessed portion 2111, and the top surface 211 is formed along the edge of the first recessed portion 2111 - a convex portion 26. The at least semiconductor light-emitting die 23 has a bottom portion 231 which is fixed to the first surface 221 of the lower base 22 and exposed to a portion inside the first recess portion 2111. The package material 24 is used to fill the inside of the protrusion 26 to cover the at least one semiconductor light-emitting die 23. The at least one semiconductor light-emitting crystal grain 23 has an internal electrode and is electrically connected to the external electrode 27 located on the top surface 2 of the top surface. In addition, the package structure 2 further includes a thermal conductive paste 25 disposed between the first surface 221 of the lower base 22 and the bottom of the first recess 2111 to bond the lower base 22 The first surface 221 and the bottom of the first recess 2111 are intended to connect the substrate 21 and the lower base 22. Therefore, the above-described light emitting diode package structure 2 can effectively eliminate a large amount of thermal energy generated by the semiconductor light emitting element (light emitting diode die) during operation and reduce thermal resistance. 200941760 However, the effect of the package structure axis proposed by Shang Lang is effective = package structure "thermoelectric separation", and further accelerates the dispersion: but in order to accomplish this, the process of fabricating and packaging structures is relatively increased. The production process of the towel is complicated, so that, in order to improve the production cost of the light-emitting diode, shame, such as the absence of the == segment, the structural improvement and the package flow = the most common development of the case The main purpose is 光 [Summary] The present invention is a photodiode package structure comprising: a package pedestal 'plurality of photodiode structures, which are assembled on the first surface of the package pedestal' a first conductive structure group formed on the first surface of the package, and the first conductive structure group is respectively connected to the two electrodes of the light-respecting structure; Covering the first wire of the package base with a second surface, a light emitted by the light-emitting diode structure can form an optical path by the light-transmitting plate; and an OE group to make On the second surface of the light-transmitting plate, when the light-transmitting plate covers the package base, the second conductive structure group and the first conductive structure group are mutually coupled, and the second conductive structure group portion Exposed to the outside of the package base. According to the above concept, the photodiode package structure of the present invention can be a single-sided double-sided aluminum substrate (MCPCB), a stone substrate, and an Al2〇3. a substrate, an A1N (Aluminum-Nitride) substrate or a * ruthenium carbide substrate. According to the above concept, the photodiode package structure described in the present invention, wherein the 200941760 group is located on the first surface of the seal to find the Wei-dipole The body structure is a light-emitting diode. 13 According to the optical diode package structure of the above-mentioned case, the light-diode structure can be electrically connected to each other in series or in parallel. According to the above concept, the photodiode package structure of the present invention, wherein the first conductive structure group is connected to the two electrodes of the spotlight monopole structure by a bonding m wire. According to the above concept, the light in the present case The polar package structure, wherein the two electrodes of the photodiode structure are respectively a combination of a p-state electrode and an n-state electrode. According to the above concept, the photodiode package structure of the present invention, wherein the first conductive structure is The second conductive structure can be formed by a gold material, a tin material or the above alloy. According to the above concept, the photodiode package structure of the present invention, wherein the first surface of the package base can be formed. According to the above concept, the photodiode package structure of the present invention has a through hole, so that the photodiode structure is emitted by the photodiode structure. The light can be transmitted through the through hole, and the sidewall of the through hole has the same angle as the sidewall of the groove. According to the above concept, the photodiode package structure of the present invention, wherein the light transmissive plate can be a Glass translucent plate or an acrylic translucent plate. According to the above concept, the photodiode package structure described in the present invention, wherein the light transmissive plate is subjected to an atomization treatment or a diffusion treatment. According to the above concept, the photodiode package structure of the present invention, wherein the light transmissive plate has a lens such that the light emitted by the photodiodes can form the optical path by the lens. In accordance with the above concept, the photodiode package structure of the present invention, wherein the light transmissive plate is provided with phosphor powder in a partial area or in all areas. According to the above concept, the photodiode package structure of the present invention further includes: a package material overlying the photodiode structure for setting the photodiode junction to the The upper, and the - 埶 埶 ' 其 其 其 其 其 其 其 其 其 其 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 =The above-mentioned county, the light structure of the second job of the case, the complex m material system can be - epoxy resin, - pin fat or - luminescent material ^ said the concept, the light dipole brittle structure described in (4), the middle of the packaging material According to the above concept, the photodiode of the present invention can be used to enclose the second conductive structure group by means of a convex shape, and the medium electronic device can be used to complete the electricity. Sexual connection. Wire or circuit board and other aspects of this case are a light two method, which includes at least the following steps: providing a = shock; ^ constructing a square seat * package base 'in the sealed base group respectively Connecting the material - the conductive structure is connected to the two electrodes of the 4-light one-pole structure; providing - light transmission 11 200941760 board 'the second surface of one of the light-transmitting plates has a second conductive structure group; and performing a covering process, The second conductive structure group of the second surface of the light-transmitting plate is bonded to the first conductive structure group, and the second conductive structure group is partially exposed outside the package base. According to the above concept, the photodiode package structure manufacturing method according to another aspect of the present invention, wherein the package base can be a single-sided double-sided aluminum substrate (MCPCB), a germanium substrate, an Al2〇3 substrate, and an AlN. (Aluminum-Nitride) substrate or a tantalum carbide substrate. According to the above concept, in the photodiode package structure manufacturing method of the present invention, the plurality of photodiode structures on the first surface of the (four) pedestal are a light-emitting diode. According to the above concept, a photodiode package structure manufacturing method according to another aspect of the present invention, wherein the photodiode structures can be electrically connected to each other in a series connection or a parallel connection. According to the above concept, the photodiode package structure manufacturing method according to another aspect of the present invention, wherein the first conductive structure group can be connected to the two electrodes of the photodiode structure in a bonding manner or a wire bonding manner. According to the above concept, the method of fabricating the photodiode package structure as described in the other aspect of the present invention, wherein the two electrodes of the photo-light-structure are respectively a combination of a -P-state electrode and an n-state electrode. According to the above concept, the photodiode package structure manufacturing method according to another aspect of the present invention, wherein the first conductive structure group and the second conductive structure group can be made of gold material, tin (four) or the above alloy. According to the above concept, the photodiode package junction 12 200941760 of the present invention, wherein the first surface of the package base can be formed with a plurality of grooves for carrying the photodiode structure . According to the above concept, a method for fabricating a photodiode package structure according to another aspect of the present invention, wherein the light transmissive plate has a through hole, such that the light emitted by the photodiode structure can be transmitted through the through hole And the sidewall of the through hole has the same angle as the sidewall of the grooves. According to the above concept, a photodiode package structure manufacturing method according to another aspect of the present invention, wherein the light transmissive plate is a glass translucent plate or an acrylic translucent plate. According to the above concept, a photodiode package structure manufacturing method according to another aspect of the present invention, wherein the light transmissive plate is subjected to an atomization treatment or a diffusion treatment. According to the above concept, in a method for fabricating a photodiode package structure according to another aspect of the present invention, the light transmissive plate has a lens, such that the light emitted by the photodiode structure can form the optical path by the lens. . According to the above concept, the photodiode package structure manufacturing method according to another aspect of the present invention, wherein the light transmissive plate is provided with phosphor powder in a partial region or in all regions. According to the above concept, the method for fabricating the photodiode sealing structure according to another aspect of the present invention further comprises the steps of: coating a package material on the photodiode structure to fix the photodiode structure to the photodiode structure The package is on the base. According to the above concept, the photodiode package of the present invention is constructed according to another aspect of the present invention, wherein the sealing material can be an epoxy resin, a resin or a luminescent material. According to the above concept, the photodiode sealing structure according to another aspect of the present invention, wherein the sealing material can be coated on the photodiode structure in a convex shape, a four-sided shape or a planar shape. According to the above concept, the photodiode sealing structure manufacturing method according to another aspect of the present invention further includes the following steps: disposing a heat dissipating structure on a second surface of the package base, so that the photodiode structure The heat generated by emitting the light can be derived by the heat dissipation structure. According to the above concept, the method of fabricating the photodiode package structure according to the above aspect of the present invention, the second f structure group can be electrically connected to other electronic devices by means of an electric wire or a circuit board. [Embodiment] Please refer to the third figure (〇, which is the first part of the case to develop the m-body package structure for the improvement of the conventional technical means). The preferred embodiment is not intended. From the ® towel, we can clearly see that The light pole bridging structure 3 includes a package base 3G, a plurality of photodiode structures 31, a first conductive structure group 32, a light transmissive plate 33, a second conductive structure group and a heat dissipation structure 35, wherein The first surface 301 of the package base 30 has a plurality of grooves 31 (), (4) carries the light two body structure ', and the package base 3 (four) can be - a single-sided double-sided substrate (CPCB), - a stone substrate, a _Ai2 〇 3 substrate tear-free substrate) or a carbon-cut substrate, the photodiode structure is disposed on the first surface of the package base 3, 200941760 the first conductive structure The group 32 is formed on the first surface 3〇1 of the package base 3() and is respectively-wired (may also be connected to the two electrodes of the photodiode structure; the light transmissive plate % is covered with a first surface 331 over the first surface 3〇1 of the package base, such that the light The light emitted from the polar body structure 31 can form an optical path by the transparent plate 33, and the first surface 33! of the transparent plate 33 is formed with the second conductive structure 34'# The first surface 331 covers the first surface of the package base 3, and the second conductive structure 34 and the first conductive structure group can be bonded to each other, and the second conductive structure 34 is And the first conductive structure is partially exposed to the pedestal of the county; the guiding structure is disposed on the second surface 3〇2 of the package base 30 to make the light diode The heat energy generated by the structure 1 to emit the two wires can be derived by the heat dissipation structure 35. ▲ Although the conventional package structure mentioned in the prior art can effectively achieve the purpose of "thermoelectric separation, the effect of accelerating heat dissipation is completed. However, the relative complexity of the process paper making process for making the entire package structure is increased, thus causing a substantial increase in the manufacturing cost, and the photodiode package structure 3 described in the present invention is mainly for covering the light-transmitting plate. 33's side j to replace this kicked The step of forming, and forming the second conductive structure group % on the first surface 3S1 of the transparent plate %, so that when the transparent plate 33 is used for the mounting base 3 (four), the sealing material can be used as in the conventional technology. The function of the second-level conductive structure 34 is formed on the light-transmitting plate and has the function of conducting electricity. Thus, the county-level brittle structure 3 described in the present invention is not only related to the conventional technology. 15 200941760 also fully achieves the "thermoelectric separation, the effect 1 is also more simplified in the procedural steps of the manufacturing process than the conventional technology. The above set is on the first surface 301 of the package base 30. The photodiode structure 31 is a light emitting diode (Light Emitting Duxle) and the two electrodes of the photodiode structure 31 are respectively a combination of a p-state electrode and a -n-state electrode, and the first The conductive structure Μ and the second conductive structure 34 can be made of an alloy of gold material f, tin material or gold material of the tin material, and the light transmissive plate can be used for all, light or partial light transmission. - glass translucent plate or an acrylic translucent plate , or 疋 can be carried out on the light-transmitting plate 33 - atomization treatment ... diffusion treatment to achieve local light transmission, or in the partial or all areas of the light-transmitting plate 33 - phosphor powder (in this Not shown in the figure). As shown in the second figure (8), the photodiode package structure described in the present invention is used to cover the light-transmitting plate 33 to achieve a fine-like effect, but the true diode structure 3 described in the present case can still be made of material. For the epoxy resin, a stone sap, or a luminescent material packaging material 36, the light f-pole structure 31 is subjected to a county, so that the bribe (four) 36 can be covered, and the light-return structure 31 is allowed to be The photodiode structure 31 can be fixed to the housing 3G and change the color of the emitted light. As shown in FIG. 2(c), the photodiode package structure 3 of the present invention may be formed on the package base 30 in addition to the structure shown in FIG. (Cavity) 31 〇 and directly set the photo-polar body structure 31 thereon. The photodiode package structure thus completed also has the features to be expressed in the present case. 16 200941760 As shown in the third diagram (d), the photodiode package structure 3 of the present invention can be electrically connected to the other electronic device by the second conductive structure 34 formed on the transparent plate 33. 3〇〇 Complete electrical connection\ or as shown in the second figure (e), a circuit board 330 is used to electrically connect with other electronic devices. Further, as shown in the third figure (f) (g), the photodiode structures 31 included in the photodiode package structure 3 of the present invention can be connected in series (as shown in the third figure (f). Or - parallel mode (as shown in the third figure (8)) to complete the electrical connection with each other, and the second conductive structure group 34 of the light-transmitting plate % described in the present case can be equal to the photodiode The body 31 is electrically connected to the second conductive structure 34 in advance to arrange the required electrical wiring, so that when the light-transmitting plate 33 is covered, the group is provided with a larger number. When the photodiode structure 31 is packaged on the pedestal 3G, it can also be completed in a quick and simple production process. Please refer to the fourth figure (a) to the fourth figure (7), which is a schematic flow chart of the manufacturing method of the light diode sealing structure according to the present invention. As can be clearly seen from the figure, 'a package base 3 is first provided (as shown in the fourth figure (8)), the package base 30 is formed with a plurality of grooves 31 〇; The first surface 3G1 is provided with a plurality of photodiode structures η (as shown in the fourth _); the first conductive layer 32' is formed on the first surface 301 of the snubber base 3 and the first conductive layer The structure group 32 is respectively connected to the two electrodes of the photodiode structure 31 (as shown in the fourth embodiment - the light transmissive plate 33 (as shown in the first (d)), the first surface 331 of the light transmissive plate Having the first conductive structure group % · performing a cover system 200941760 (as shown in the fourth _)), the second conductive structure group 34 of the first surface 331 of the light-transmitting plate 33 and the first conductive The structure group ^ is bonded to each other and the second conductive structure group 34 is partially exposed outside the package base; finally, the heat conductive dry structure 35 is disposed on the second surface 3〇2 of the package base 3 (as shown in the fourth figure (f )), such that the thermal energy produced by the photodiode structures 31 is derived by the thermally conductive structure 35. Through the above-described fabrication steps, the photodiode package structure 3 as shown in the third diagram (a) can be further advanced. Through the above technical description 'we can clearly see that the most important feature of the photodiode package structure described in this case is to cover the translucent plate on the package base to achieve the same effect as the seal used in the conventional technology' and The structure of the conductive structure is formed directly on the surface of the light-transmitting plate, so that the light-transmitting plate has a conductive function and is convenient to manufacture. Therefore, the use of the light-diode package structure described in the present invention does improve the conventional technology. The resulting process is cumbersome and lacks, thus completing the most important purpose of the case. Please refer to the fifth figure (a)(b)(c)' for the second preferred embodiment of the photodiode package structure developed to improve the conventional technical means. It can be clearly seen from the figure that the photodiode package structure 4 includes a package base 40, a plurality of photodiode structures 41, a first conductive structure group 42, a light transmissive plate 43, and a second conductive structure. The heat dissipation plate 43 has a through hole 431 ' and the through hole 431 is the largest difference between the present embodiment and the first preferred embodiment. The angle of inclination of the side wall 4310 is opposite to the inclination angle of the groove 410 on the first surface 401 of the package base 40. When the transparent plate 43 having the through hole 431 covers the package, the group The light emitted by the photodiode structure 41 disposed on the package base 40 can be transmitted through the through hole 431 of the light transmissive plate 43. The configuration with the through-holes therefore requires a step of sealing the package over the entire package structure. The new material is used to achieve the optical characteristics of the photodiode structure 41. Demand, and in the fifth figure U) 'the encapsulating material 46 is in a convex shape The cover material 46 is coated on the light-emitting diode structure 41, and the package material 46 may be covered in the plane shape or the concave shape as shown in the fifth figure (8) and the fifth figure (e). On the pole structure 41, there is a need for different optical characteristics due to the structure of the photodiode. The technical components of the present embodiment are the same as those of the first preferred embodiment, and thus are not described herein. Please refer to the sixth figure, which is a schematic diagram of a third preferred embodiment of a photodiode package structure developed to improve the conventional technical means. It can be clearly seen from the figure that the photodiode package structure 5 includes a package base 50, a plurality of photodiode structures 51, a first conductive structure group 52, a light transmissive plate 53, and a second conductive structure. The group % and a heat dissipation structure 55, and the biggest difference between the embodiment and the first preferred embodiment and the second preferred embodiment is that the light transmissive plate 53 has a lens 530 in this example, when the lens 530 is provided. The light emitted by the light-emitting plate 53 on the package base 50 and the light-emitting diodes 51 on the package base 50 can be made by the light-transmitting plate 53. The lens 530 forms the optical path ', and the lens 530 can be integrally formed on the 200941760 transparent plate 53. Alternatively, the lens 530 can be applied to the transparent plate 53 in an assembled manner as shown on the right side of the sixth figure. on. However, some of the technical means in this embodiment are the same as those in the first preferred embodiment, and thus will not be described herein. According to the above technical description, the fabrication process of the photodiode package described in the present invention not only effectively simplifies the entire production process, but also greatly reduces the cost of the entire package manufacturing process due to the simplification of the process. As a result, the invention of the present invention has indeed improved the problems and disadvantages in the prior art that the conventional technical means are complicated and costly, and the main purpose of developing the present case is completed. The present invention has been modified by those skilled in the art, and is not intended to be protected as claimed. [Simple description of the diagram] This case can be obtained through a more in-depth understanding of the following diagrams and explanations:
圖’其係為-習用發光二極體之封裝結構示意圖。 =二圖，其係為半導體發光元件封裝結構示意圖。 :圖U)’其係為本案為改善制技術手段之缺失所發 -光—極體封I結構之第—較佳實施例示意圖。 :圖（b)’其係為本案所狀光二極體封裝結構覆蓋封 I材料示意圖。 =二圖（(〇,其係為本案所述之光二極體封裝結構所包含 封裝基座無凹槽構造示意圖。 〜圖⑷’其係為本案所述之光二極贿裝結構以電導 20 200941760 線與其它電子裝置錢電性連接示意圖。 其係為本案所述之光二極體封裝結構以電路 板一其匕電子裝置完成電性連接示意圖。 第四圖（a)至第四圖（f)，其係為太宏 封裝結顧作权絲料圖_奴光二極艘 轨圖（a) (b)(c)，其係為本案為改善習用技術手段之 立、所發展iU -光二極麵裝結構之第二較佳實施例示 忍圖。 ^圖’其係為本案為改善制技術手段之缺失所發展出 光一極體封裝結構之第三較佳實施例示意圖。 【主要元件符號說明】 本案圖式中所包含之各元件列式如下：Figure ' is a schematic view of a package structure of a conventional light-emitting diode. = 2, which is a schematic diagram of a semiconductor light emitting device package structure. Fig. U)' is a schematic diagram of a preferred embodiment of the present invention in order to improve the technical means of the invention. Figure (b)' is a schematic view of the material of the photodiode package covering the package I in this case. = 2 ((〇, which is a schematic diagram of the non-grooved structure of the package base included in the photodiode package structure described in this case. ~ Figure (4)' is the photodiode brittle structure described in this case to conduct electricity 20 200941760 A schematic diagram of the electrical connection between the wire and other electronic devices. It is a schematic diagram of the optical diode package structure described in the present invention, and the electrical connection is completed by the circuit board and the electronic device. The fourth figure (a) to the fourth figure (f) , which is the Taihong package and the right-handed silk map _ slave light pole map (a) (b) (c), which is the case for the improvement of the conventional technical means, the development of the iU-optical two-pole surface structure The second preferred embodiment of the present invention is a diagram of a third preferred embodiment of the light-emitting body package structure developed in the present invention for improving the technical means. [Main component symbol description] The components included in the list are as follows:
發光二極體封裝結構i 導熱載體12 容置空間14 熱導管16 發光 半導體發光元件封裝結構2 •極體 基板21 半導體發光晶粒23 導熱膠體25 外部電極27 苐一表面221 第一凹陷部2111 引腳11 引線13 封裝膠體15 晶片17 下底座22 封裝材質24 凸部26 頂表面211 晶粒底部231 底表面212 21 200941760Light-emitting diode package structure i Heat-conducting carrier 12 accommodating space 14 Heat pipe 16 Light-emitting semiconductor light-emitting device package structure 2 • Polar body substrate 21 Semiconductor light-emitting die 23 Thermal conductive paste 25 External electrode 27 First surface 221 First recessed portion 2111 Foot 11 Lead 13 Package Colloid 15 Wafer 17 Lower Base 22 Package Material 24 Projection 26 Top Surface 211 Die Bottom 231 Bottom Surface 212 21 200941760
第二凹陷部2112 光二極體封裝結構3 光二極體結構31 透光板33 散熱結構35 封裝基座之第一表面301 封裝基座之第二表面302 透光板之第一表面331 凹槽310 電路板330 光二極體封裝結構4 光二極體結構41 透光板43 散熱結構45 封裝基座之第一表面401 封裝基座之第二表面402 透光板之第一表面431 透孔之側壁4310 光二極體封裝結構5 光二極體結構51 透光板53 散熱結構55 封裝基座之第一表面501 透光板之第一表面531 第二表面222 封裝基座30 第一導電結構組32 第二導電結構組34 封裝材料36 電導線320 其它電子裝置300 封裝基座40 第一導電結構組42 第二導電結構組44 封裝材料46 透孔430 凹槽410 凹槽之侧壁4101 封裝基座50 第一導電結構組52 第二導電結構組54 透鏡530 封裝基座之第二表面502 22Second recess 2112 photodiode package structure 3 photodiode structure 31 light transmissive plate 33 heat dissipation structure 35 first surface of the package base 301 second surface of the package base 302 first surface 331 of the light transmissive plate Circuit board 330 photodiode package structure 4 photodiode structure 41 light transmissive plate 43 heat dissipating structure 45 first surface 401 of the package base second surface 402 of the package base first surface 431 of the light transmissive plate side wall 4310 of the through hole Photodiode package structure 5 photodiode structure 51 light transmissive plate 53 heat dissipation structure 55 first surface of package base 501 first surface of light transmissive plate 531 second surface 222 package base 30 first conductive structure group 32 second Conductive structure group 34 Packaging material 36 Electrical lead 320 Other electronic device 300 Package base 40 First conductive structure group 42 Second conductive structure group 44 Packaging material 46 Through hole 430 Groove 410 Groove sidewall 4101 Package base 50 A conductive structure group 52, a second conductive structure group 54, a lens 530, a second surface 502 of the package base