TW200937123A - Resist material and laminate - Google Patents

Resist material and laminate Download PDF

Info

Publication number
TW200937123A
TW200937123A TW98101387A TW98101387A TW200937123A TW 200937123 A TW200937123 A TW 200937123A TW 98101387 A TW98101387 A TW 98101387A TW 98101387 A TW98101387 A TW 98101387A TW 200937123 A TW200937123 A TW 200937123A
Authority
TW
Taiwan
Prior art keywords
group
polymer
resist material
organic group
double bond
Prior art date
Application number
TW98101387A
Other languages
Chinese (zh)
Other versions
TWI337690B (en
Inventor
Shigeru Nakamura
Takashi Nishimura
Shuuji Kage
Yoshitaka Kunihiro
Takashi Watanabe
Original Assignee
Sekisui Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sekisui Chemical Co Ltd filed Critical Sekisui Chemical Co Ltd
Publication of TW200937123A publication Critical patent/TW200937123A/en
Application granted granted Critical
Publication of TWI337690B publication Critical patent/TWI337690B/zh

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/22Di-epoxy compounds
    • C08G59/30Di-epoxy compounds containing atoms other than carbon, hydrogen, oxygen and nitrogen
    • C08G59/306Di-epoxy compounds containing atoms other than carbon, hydrogen, oxygen and nitrogen containing silicon
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/32Epoxy compounds containing three or more epoxy groups
    • C08G59/3254Epoxy compounds containing three or more epoxy groups containing atoms other than carbon, hydrogen, oxygen or nitrogen
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04Polysiloxanes
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/28Applying non-metallic protective coatings
    • H05K3/285Permanent coating compositions
    • H05K3/287Photosensitive compositions
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/54Encapsulations having a particular shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/56Materials, e.g. epoxy or silicone resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0274Optical details, e.g. printed circuits comprising integral optical means
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203Fillers and particles
    • H05K2201/0206Materials
    • H05K2201/0209Inorganic, non-metallic particles
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007Types of components
    • H05K2201/10106Light emitting diode [LED]
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/20Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
    • H05K2201/2054Light-reflecting surface, e.g. conductors, substrates, coatings, dielectrics

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials For Photolithography (AREA)
  • Silicon Polymers (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Epoxy Resins (AREA)

Abstract

Disclosed is a resist material which enables formation of a white resist film having high resolution, high solder reflow resistance and high reflectance. The resist material is also capable of forming a resist film which is hardly discolored from white to other colors when exposed to high temperatures or irradiated with light. Specifically disclosed is a resist material which is used for forming a resist film for a light-emitting diode device that emits light having a wavelength of not more than 800 nm. The resist material contains a siloxane polymer and a white filler.

Description

200937123 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種例如用以於上表面形成有抗蝕膜之基 板上積層有發光二極體晶片的發光二極體元件中形成抗蝕 膜之抗蝕劑材料、以及具有使用該抗蝕劑材料所形成之抗 蝕膜的積層體。 . 【先前技術】 先前,防焊膜等之抗蝕臈被廣泛用作印刷電路板之保護 ® 膜等。為形成上述防焊膜,而使用防焊材料。 作為上述防焊材料之一例,於下述專利文獻丨中揭示有 如下防焊材料:其含有作為丙烯酸酯化合物之紫外線硬化 型預聚物,以及該紫外線硬化型預聚物、有機聚矽氧烷及 鋁螯合物之反應產物。該防焊材料中,可調配硫酸鋇碳 酸鈣、微細滑石粉、膨潤土、微細二氧化矽、黏土、高嶺 土或微細石棉等來作為顏料。藉由使用上述防焊材料來形 成防焊膜,可提高耐熱性。 ❹ 而且,近年來發光二極體(以下將發光二極體簡稱作 LED(Light Emitting Diode))元件正備受關注。LED 元件 中,例如於上表面形成有抗蚀膜之印刷電路板上積層有 . LED b曰片。於LED晶片上設置有用以供給電力之端子。 LED晶片之端子例如藉由焊錫或金等而與印刷電路板上之 電極連接。LED元件中,較理想的是可有效地利用LED晶 片之發光。因此,作為上述抗蝕膜,較理想的是能夠以較 高之反射率來反射來自LED晶片之光的白色抗蝕膜。 137746.doc 200937123 作為用以形成上述白色抗蝕膜之抗蝕劑材料之一例,於 下述專利文獻2中揭示有如下抗蝕劑材料:其含有使環氧 樹脂與水解性烷氧基矽烷進行脫醇反應所得之含有烷氧基 之矽烷改質環氧樹脂、含有不飽和基之聚羧酸樹脂、稀釋 劑、光聚合起始劑、以及硬化黏著性賦予劑。 使用該抗蝕劑材料而形成之白色抗蝕膜即便暴露於高溫 下亦不易發生黃變。 於下述專利文獻3中揭示有如下防焊材料:其含有不具 有芳環之含羧基之樹脂、光聚合起始劑、環氧化合物、金 紅石型二氧化鈦、以及稀釋劑。該防焊材料係熱硬化性或 光硬化性之抗蝕劑材料。 [專利文獻1]曰本專利特開昭58·25374號公報 [專利文獻2]日本專利特開2〇〇7_249148號公報 [專利文獻3]曰本專利特開2〇〇7_322546號公報 【發明内容】 _使用上述專利文獻1所揭示之防焊材料時,可形成耐 熱1·生優異之防焊膜。然而,上述防焊材料含有丙烯酸酯化 合物作為主成分,故即便初期狀態下為白色防焊膜,但若 暴露於高溫下則存在發生黃變之情形。因此,上述專利文 獻1所揭不之防焊材料並不適於形成LED元件之白色防焊 膜。 使用上述專利文獻2所揭示之抗蝕劑材料而形成之白色 抗蝕膜’即便經高溫下之暴露亦相對不易發生黃變。上述 抗触劑材料含有利用烷氧基矽烷使環氧樹脂改質的含有烷 137746.doc 200937123 氧基之矽烷改質環氧樹脂作為主成分β 因此,若暴露於回焊時等20(rc左右以上之高溫下,則 存在抗钱膜發生黃變的情形。 使用上述專利文獻3所揭示之防焊材料而形成之白色防 焊膜含有環氧化合物。因此,若暴露於回焊時等2〇〇。〇左 右以上之高溫下,則存在抗蝕膜發生黃變的情形。 本發明之目的在於提供一種可形成暴露於高溫下或者被 光照射時不易自白色發生變色之抗蝕膜的抗蝕劑材料、以 及具有使用該抗蝕劑材料所形成之抗蝕膜的積層體。 根據本發明,可提供一種抗蝕劑材料,其特徵在於:其 係用於形成發出波長為800 nm以下之光的LED元件之抗蝕 膜者’且含有矽氧烷聚合物及白色填料。 本發明之抗蝕劑材料之某個特定態樣中,上述矽氧烷聚 合物係藉由使下述式(1)所表示之至少一種矽烷化合物聚合 所得之矽氧烷聚合物。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resist film formed in, for example, a light-emitting diode element in which a light-emitting diode wafer is laminated on a substrate having a resist film formed on its upper surface. A resist material and a laminate having a resist film formed using the resist material. [Prior Art] Previously, anti-corrosion films and the like have been widely used as protection layers for printed circuit boards, etc. In order to form the above solder resist film, a solder resist material is used. As an example of the above-mentioned solder resist material, the following patent document discloses a solder resist material containing an ultraviolet curable prepolymer as an acrylate compound, and an ultraviolet curable prepolymer, an organic polydecane oxide. And the reaction product of the aluminum chelate. Among the solder resist materials, calcium sulphate calcium carbonate, fine talc powder, bentonite, fine cerium oxide, clay, kaolin or fine asbestos may be blended as a pigment. By using the above-described solder resist material to form a solder resist film, heat resistance can be improved. ❹ Furthermore, in recent years, light-emitting diodes (hereinafter referred to as LEDs (LED) are attracting attention. In the LED element, for example, an LED b plate is laminated on a printed circuit board having a resist film formed on its upper surface. A terminal for supplying power is provided on the LED chip. The terminals of the LED chip are connected to the electrodes on the printed circuit board by, for example, solder or gold. Among the LED elements, it is desirable to effectively utilize the light emission of the LED wafer. Therefore, as the resist film, a white resist film capable of reflecting light from the LED chip with a high reflectance is preferable. 137746.doc 200937123 As an example of a resist material for forming the white resist film, Patent Document 2 listed below discloses a resist material containing an epoxy resin and a hydrolyzable alkoxysilane. An alkoxy-containing decane-modified epoxy resin obtained by a dealcoholization reaction, a polycarboxylic acid resin containing an unsaturated group, a diluent, a photopolymerization initiator, and a hardening adhesion-imparting agent. The white resist film formed using the resist material is less susceptible to yellowing even when exposed to a high temperature. Patent Document 3 discloses a solder resist material containing a carboxyl group-containing resin having no aromatic ring, a photopolymerization initiator, an epoxy compound, rutile type titanium oxide, and a diluent. The solder resist material is a thermosetting or photocurable resist material. [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. When the solder resist material disclosed in the above Patent Document 1 is used, it is possible to form a solder resist film excellent in heat resistance. However, since the above-mentioned solder resist material contains an acrylate compound as a main component, even if it is a white solder resist film in an initial state, yellowing may occur if it is exposed to a high temperature. Therefore, the solder resist material disclosed in the above Patent Document 1 is not suitable for forming a white solder resist film of an LED element. The white resist film formed by using the resist material disclosed in Patent Document 2 is relatively less susceptible to yellowing even when exposed to high temperatures. The anti-contact agent material contains a decane modified epoxy resin containing an alkane 137746.doc 200937123 oxy group modified with an alkoxy decane as a main component β. Therefore, if exposed to reflow, etc. 20 (rc) The above-mentioned high temperature may cause yellowing of the anti-money film. The white solder resist film formed by using the solder resist material disclosed in the above Patent Document 3 contains an epoxy compound. Therefore, if it is exposed to reflow, etc. 〇 〇 〇 〇 〇 〇 〇 抗蚀 抗蚀 抗蚀 抗蚀 抗蚀 抗蚀 抗蚀 抗蚀 抗蚀 抗蚀 抗蚀 抗蚀 抗蚀 抗蚀 抗蚀 抗蚀 抗蚀 抗蚀 抗蚀 抗蚀 抗蚀 抗蚀 抗蚀 抗蚀 抗蚀 抗蚀 抗蚀 抗蚀 抗蚀 抗蚀 抗蚀 抗蚀 抗蚀 抗蚀 抗蚀 抗蚀 抗蚀 抗蚀 抗蚀 抗蚀 抗蚀a material for a coating, and a laminate having a resist film formed using the resist material. According to the present invention, a resist material for forming light having a wavelength of 800 nm or less can be provided. The resist element of the LED element includes a siloxane polymer and a white filler. In a specific aspect of the resist material of the present invention, the above siloxane polymer is obtained by the following formula 1) represented by the obtained at least one polymeric silicon compound of Silane siloxane polymer.

Si(x)P(R)4-P·.·式(1) 上述式(1)中,X表示水解性基,R表示碳數為丨〜扣之非 水解性之有機基,p表示丨〜4之整數。當p為2〜4時複數個 X可相同亦可不同。當卩為i或2時,複數個尺可相同亦可不 同。 本發明之抗蝕劑材料之其他特定態樣中,上述矽氧烷聚 合物係具有環狀醚基之矽氧烷聚合物’上述具有環狀醚基 之矽氧烧聚合物係藉由使上述式(1)中之p為的整數、 且至少一個R為具有環狀醚基之有機基的矽烷化合物聚合 137746.doc 200937123 所得之矽氧烷聚合物。 本發明之抗蝕劑材料之進而其他特定態樣中上述具有 環狀鍵基之石夕氧烧聚合物具有於石夕原子上直接鍵結有碳原 子之有機基,且該有機基之10〜80%具有環狀醚基。 本發明之抗蝕劑材料之其他特定態樣中’上述具有環狀 . 醚基之有機基含有具有環氧環己烷骨架之有機基。 . 本發明之抗蝕劑材料之進而其他特定態樣中,上述具有 環狀喊基之石夕氧烧聚合物具有在石夕原子上直接鍵結有碳原 ® 子之有機基,且該有機基之1G〜嶋具有環氧環己烧骨 _ 架。 . 本發明之抗蝕劑材料之其他特定態樣中,上述式(1)所 表示之矽烷化合物100 „!〇1%中,上述式(1)所表示且上述 式(1)中之p為2的矽烷化合物之含量為2〇〜1〇〇 之範圍 内。 本發明之抗蝕劑材料之其他特定態樣中,進而含有具有 ©酸肝基或叛基、以及不飽和雙鍵之樹脂。 , 本發明之抗蝕劑材料之進而其他特定態樣中,樹脂成分 之固形物酸值(mg KOH/g)與樹脂成分之環氧當量(g/eq)之 積處於25000〜100000之範圍内。 本發明之抗蝕劑材料之進而其他特定態樣中,進而含有 光自由基產生劑。 本發明之抗蝕劑材料之進而其他特定態樣中’進而含有 光酸產生劑。 本發明之抗蝕劑材料之其他廣泛態樣中,提供一種抗蝕 137746.doc 200937123 劑材料’其含有藉由使下述式⑴所表示之至少一種矽烷化 。物聚合所得之矽氧烷聚合物光聚合起始劑以及白色 真料,上述式⑴所表示之至少一種石夕烧化合物含有下述式 ()所表不、且下述式(1)中之口為]的矽烷化合物,且上述 :氧烷聚合物之重量平均分子量處於1000〜50000之範圍 • Si(x)P(R)4-P·..式⑴ 上述式⑴中’ X表示水解性基,R表示碳數為㈣之非 水解性之有機基,p表示卜4之整數。當卩為2〜4時複數個 X可相同亦可不同。為…時,複數個R可相同亦可不 同0 本發明之抗钱劑材料之某個特定態樣中,上述式(1)所 表示之矽烷化合物總計100 m〇l%*,上述式(1)所表示且 上述式(1)中之P為2的矽烷化合物之含量為5〜1〇〇 之 範圍内。 參本發明之抗㈣丨材料之其他較態樣巾,上料氧燒聚 合物含有具有不飽和雙鍵之石夕氧燒聚合物,上述具有不飽 和雙鍵之石夕氧燒聚合物係藉由使上述式⑴中之p為U的 整數、且至少-個R為具有不飽和雙鍵之有機基的發炫化 合物聚合所得之矽氧烷聚合物。 本發明之抗餘劑材料之進而其他特定態才装中,上述且有 不飽和雙鍵之石夕氧烧聚合物具有在石夕原子上直接鍵結:碳 原子之有機基,且該有機基之5〜8〇%具有不飽和雙鍵。 本發明之抗钱劑材料之進而其他特定態樣中,上述石夕氧 I37746.doc 200937123 烷聚合物含有具有酸酐基或羧基、以及不飽和雙鍵之矽氧 烷聚合物,上述具有酸酐基或羧基、以及不飽和雙鍵之矽 氧烷聚合物係藉由使上述式(1)中之卩為丨〜3的整數且至少 一個R為具有酸酐基或羧基之有機基的矽烷化合物與上 述式(1)中之p為1〜3的整數且至少一個R為具有不飽和雙鍵 • 之有機基的矽烷化合物聚合所得之矽氧烷聚合物。 : 本發明之抗蝕劑材料之其他特定態樣中,上述具有酸酐 基或羧基、以及不飽和雙鍵的矽氧烷聚合物具有在矽原子 © 上直接鍵結有碳原子之有機基,且該有機基之1〜25。/。具有 酸酐基或羧基,並且該有機基之5〜8〇%具有不飽和雙鍵。 本發明之抗蝕劑材料之其他特定態樣中,上述矽氧烷聚 合物含有具有環狀醚基之矽氧烷聚合物,上述具有環狀醚 基之矽氧烷聚合物係藉由使上述式(1)中之p為丨〜3的整 數、且至少一個R為具有環狀醚基之有機基的矽烷化合物 聚合所得之矽氧烷聚合物。 φ 本發明之抗蝕劑材料之進而其他特定態樣下,上述具有 環狀趟基之石夕氧烧聚合物具有在石夕原子上直接冑結有碳原 子之有機基,且該有機基之5〜8〇%具有環狀醚基。 本發明之抗蝕劑材料之其他特定態樣下,上述矽氧烷聚 η物3有具有酸酐基或羧基、不飽和雙鍵、以及環狀醚基 之矽氧烷聚合物,上述具有酸酐基或羧基、不飽和雙鍵、 以及環狀喊基之石夕氧烧聚合物係藉由使上述式⑴中之ρ為 1〜3的整數且至少一個R為具有酸酐基或羧基之有機基的矽 烧化CT物上述式(1)中之p為1〜3的整數且至少一個R為具 137746.doc 200937123 有不飽和雙鍵之有機基的矽烷化合物、以及上述式(1)中之 P為1〜3的整數且至少一個尺為具有環狀醚基之有機基的矽 烷化合物聚合所得之矽氧烷聚合物。 本發明之抗蝕劑材料之進而其他特定態樣中,上述具有 酸酐基或羧基、不飽和雙鍵、以及環狀醚基之矽氧烷聚合 物具有在矽原子上直接鍵結有碳原子之有機基,該有機基 之1〜25%具有酸酐基或羧基,且該有機基之5〜8〇%具有不 飽和雙鍵,並且該有機基之5〜8〇%具有環狀醚基。 ► 本發明之抗蝕劑材料之其他特定態樣下,樹脂成分之固 形物酸值(mg KOH/g)與環氧當量(g/eq)之積處於 30000〜500000之範圍内。 本發明之抗蝕劑材料之進而其他特定形態中,相對於上 述梦氧烧聚合物1〇〇重量份’上述白色填料之含量為 150〜1000重量份之範圍内。 本發明之積層體具備印刷電路板以及抗蝕膜,該抗蝕膜 丨積層於該印刷電路板之表面上,且係使用依照本發明而構 成之抗蝕劑材料所形成β (發明之效果) 本發明之抗蝕劑材料含有矽氧烷聚合物及白色填料,故 例如藉由將抗蝕劑材料塗佈於基板上並進行曝光可形成白 色抗蝕膜。進而,該抗蝕膜具有較高之耐熱性。因此,當 抗蝕膜暴露於高溫下時,不易自白色發生變色。因此,藉 由使用本發明之抗蝕劑材料來形成LED元件之抗蝕膜,可 有效地反射來自LED晶片之光,從而可提高LED元件之電- 137746.ci〇c 200937123 光之轉換效率。 當矽氧烷聚合物含有具有環狀醚基之矽氧烷聚合物、且 上述具有環狀醚基之矽氧烷聚合物係藉由使上述式(1)申之 1〜3的整數且至少一個尺為具有環狀醚基之有機基的矽 烷化合物聚合所得之矽氧烷聚合物時,可形成即便暴露於 同/皿下亦更不易自白色發生變色之抗蝕膜。進而,可形成 即便被光照射亦不易自白色發生變色之抗蝕膜。 當具有環狀醚基之有機基為具有環氧環己烷骨架之有機 基時’可形成即便暴露於高溫下亦更不易自白色發生變色 之抗姓膜。進而’可形成即便被光照射亦更不易自白色發 生變色之抗蝕膜。 根據本發明之其他廣泛態樣,抗蝕劑材料含有藉由使上 述特定之矽烷化合物聚合所得之矽氧烷聚合物、光聚合起 始劑、以及白色填料,且矽氧院聚合物之重量平均分子量 處於7000〜50000之範圍内,因此顯影性優異。進而,藉由 將本發明之抗餘劑材料塗佈於基板上並進行曝光,可形成 具有高耐回焊性及高反射率之白色抗蝕膜。藉由使用本發 明之抗钕劑材料來形成led元件之抗蝕膜,可有效地反射 來自LED晶片之光,從而可提高led元件之電-光之轉換效 率。 使用本發明之抗蝕劑材料而形成之抗蝕膜在暴露於回烊 時等之南溫下、或者被光照射時,不易自白色發生變色, 且反射率不易下降。 【實施方式】 137746.doc -10- 200937123 以下,對本發明之詳細内容進行說明。 本發明之抗钱劑材料含有石夕氧垸聚合物及白色填料。 (矽氧烷聚合物) 上述石夕氧炫聚合物係藉由使下述式⑴所表示之至少一 =夕院:合物聚合所得之嫩聚合物,化合物可僅 1 吏用;:種,亦可併用兩種以上1氧絲合物可僅使用-種’亦可併用兩種以上。 ❹Si(x)P(R)4-P·. (1) In the above formula (1), X represents a hydrolyzable group, R represents a non-hydrolyzable organic group having a carbon number of 丨-decal, and p represents 丨. An integer of ~4. When p is 2 to 4, a plurality of Xs may be the same or different. When 卩 is i or 2, the plurality of feet may be the same or different. In another specific aspect of the resist material of the present invention, the above siloxane polymer is a cyclic ether group-containing oxirane polymer. The above oxime-oxygenated polymer having a cyclic ether group is An alkane polymer obtained by polymerizing 137746.doc 200937123, wherein p in the formula (1) is an integer and at least one R is a decane compound having an organic group having a cyclic ether group. Further, in other specific aspects of the resist material of the present invention, the above-mentioned rock-oxygenated polymer having a cyclic bond group has an organic group directly bonded to a carbon atom on the stone atom, and the organic group is 10~ 80% has a cyclic ether group. In other specific aspects of the resist material of the present invention, the above-mentioned organic group having a cyclic group has an organic group having an epoxycyclohexane skeleton. In still another specific aspect of the resist material of the present invention, the above-mentioned rock-alkali-oxygenated polymer having a ring-shaped base has an organic group directly bonded to a carbonogen® on a stone atom, and the organic The base 1G ~ 嶋 has an epoxy ring burnt bone _ frame. In another specific aspect of the resist material of the present invention, the decane compound 100 represented by the above formula (1) is represented by the above formula (1) and wherein p in the above formula (1) is The content of the decane compound of 2 is in the range of 2 Å to 1 Torr. Other specific aspects of the resist material of the present invention further include a resin having a acid liver group or a thiol group and an unsaturated double bond. Further, in other specific aspects of the resist material of the present invention, the product of the solid content acid value (mg KOH/g) of the resin component and the epoxy equivalent (g/eq) of the resin component is in the range of 25,000 to 100,000. Further, in other specific aspects of the resist material of the present invention, a photoradical generator is further contained. Further, in other specific aspects of the resist material of the present invention, the photoacid generator is further contained. In other broad aspects of the etchant material, a resist 137746.doc 200937123 material is provided which contains photopolymerization of at least one oxirane represented by the following formula (1). Starting agent and white material, the above formula (1) At least one of the cerium-smelting compounds is a decane compound represented by the following formula () and having a mouth in the following formula (1), and the above-mentioned weight average molecular weight of the oxyalkylene polymer is in the range of 1,000 to 50,000. Si(x)P(R)4-P.. Formula (1) In the above formula (1), 'X represents a hydrolyzable group, R represents an organic group having a carbon number of (4), and p represents an integer of Bu. When it is 2 to 4, the plurality of X may be the same or different. When it is ..., the plurality of R may be the same or different. 0 In a specific aspect of the anti-money material of the present invention, the above formula (1) The total content of the decane compound is 100 m〇l%*, and the content of the decane compound represented by the above formula (1) and P in the above formula (1) is 2 to 1 〇〇. The anti-(four) 丨 of the present invention The other sample of the material, the oxy-fired polymer containing the oxy-oxygenated polymer having an unsaturated double bond, and the above-mentioned oxaxy-oxygenated polymer having an unsaturated double bond is obtained by the above formula (1) p is an integer of U, and at least one R is a siloxane polymer obtained by polymerizing a luminescent compound having an organic group having an unsaturated double bond. Further, in the other specific state of the anti-reagent material of the present invention, the above-mentioned and the unsaturated double-bonded oxime-oxygenated polymer has an organic group directly bonded to a cerium atom: a carbon atom, and the organic group 5 to 8 % by weight of the unsaturated double bond. In still other specific aspects of the anti-money agent material of the present invention, the above-mentioned alkaloid I37746.doc 200937123 alkane polymer contains an acid anhydride group or a carboxyl group, and an unsaturated double bond. The oxirane polymer, the above-mentioned oxirane polymer having an acid anhydride group or a carboxyl group, and an unsaturated double bond is obtained by making 卩 in the above formula (1) an integer of 丨 〜3 and at least one R having an acid anhydride The decane compound of the organic group of a group or a carboxyl group is a oxoxane polymer obtained by polymerizing a decane compound in which the p in the above formula (1) is an integer of 1 to 3 and at least one R is an organic group having an unsaturated double bond. In other specific aspects of the resist material of the present invention, the above-mentioned oxirane polymer having an acid anhydride group or a carboxyl group and an unsaturated double bond has an organic group to which a carbon atom is directly bonded to a ruthenium atom ©, and The organic group is 1 to 25. /. There is an acid anhydride group or a carboxyl group, and 5 to 8 % by weight of the organic group has an unsaturated double bond. In another specific aspect of the resist material of the present invention, the above siloxane polymer comprises a siloxane polymer having a cyclic ether group, and the above-described oxirane polymer having a cyclic ether group is The p-oxane polymer obtained by polymerizing the decane compound in which the p in the formula (1) is an integer of 丨3 to 3 and at least one R is an organic group having a cyclic ether group. Further, in other specific aspects of the resist material of the present invention, the above-mentioned oxo-oxygenated polymer having a cyclic fluorenyl group has an organic group directly entangled with a carbon atom on the cerium atom, and the organic group 5 to 8 % by weight has a cyclic ether group. In another specific aspect of the resist material of the present invention, the above-mentioned oxoxane poly η 3 has a siloxane polymer having an acid anhydride group or a carboxyl group, an unsaturated double bond, and a cyclic ether group, and the above has an acid anhydride group. Or a carboxyl group, an unsaturated double bond, and a cyclic oxyalkylene polymer are obtained by making ρ in the above formula (1) an integer of 1 to 3 and at least one R is an organic group having an acid anhydride group or a carboxyl group. The calcined CT article wherein p in the above formula (1) is an integer of 1 to 3 and at least one R is a decane compound having an organic group having an unsaturated double bond, and P in the above formula (1) is An alkoxysilane polymer obtained by polymerizing a decane compound having an integer of 1 to 3 and at least one of an organic group having a cyclic ether group. In still other specific aspects of the resist material of the present invention, the above-described oxirane polymer having an acid anhydride group or a carboxyl group, an unsaturated double bond, and a cyclic ether group has a carbon atom directly bonded to a ruthenium atom. The organic group has 1 to 25% of the organic group having an acid anhydride group or a carboxyl group, and 5 to 8 % by weight of the organic group has an unsaturated double bond, and 5 to 8 % by weight of the organic group has a cyclic ether group. ► In other specific aspects of the resist material of the present invention, the product of the solid content acid value (mg KOH/g) and the epoxy equivalent (g/eq) of the resin component is in the range of 30,000 to 500,000. In still another specific embodiment of the resist material of the present invention, the content of the white filler is from 150 to 1000 parts by weight based on 1 part by weight of the above-mentioned oxy-oxygenated polymer. The laminate of the present invention comprises a printed circuit board and a resist film deposited on the surface of the printed circuit board and formed by using a resist material formed in accordance with the present invention (effect of the invention) Since the resist material of the present invention contains a siloxane polymer and a white filler, a white resist film can be formed, for example, by applying a resist material on a substrate and performing exposure. Further, the resist film has high heat resistance. Therefore, when the resist film is exposed to a high temperature, it is difficult to cause discoloration from white. Therefore, by using the resist material of the present invention to form a resist film of an LED element, light from the LED chip can be efficiently reflected, thereby improving the conversion efficiency of the light of the LED element. When the siloxane polymer contains a siloxane having a cyclic ether group, and the above-mentioned oxirane polymer having a cyclic ether group is an integer of 1 to 3 by the above formula (1) and at least When a decane compound obtained by polymerizing a decane compound having an organic group having a cyclic ether group is formed, a resist film which is less likely to be discolored from white even when exposed to the same dish can be formed. Further, it is possible to form a resist film which is less likely to be discolored from white even when it is irradiated with light. When the organic group having a cyclic ether group is an organic group having an epoxycyclohexane skeleton, an anti-surname film which is less likely to be discolored from white even when exposed to a high temperature can be formed. Further, it is possible to form a resist film which is less likely to be discolored from white even when irradiated with light. According to other broad aspects of the present invention, the resist material contains a siloxane polymer, a photopolymerization initiator, and a white filler obtained by polymerizing the above specific decane compound, and the weight of the oxime polymer is averaged. Since the molecular weight is in the range of 7,000 to 50,000, the developability is excellent. Further, by applying the anti-residue material of the present invention to a substrate and performing exposure, a white resist film having high reflow resistance and high reflectance can be formed. By forming the resist film of the LED element using the anti-caries material of the present invention, light from the LED chip can be efficiently reflected, thereby improving the electro-optical conversion efficiency of the LED element. When the resist film formed by using the resist material of the present invention is exposed to light at a south temperature or the like, or when it is irradiated with light, it is less likely to cause discoloration from white, and the reflectance is not easily lowered. [Embodiment] 137746.doc -10- 200937123 Hereinafter, the details of the present invention will be described. The anti-money agent material of the present invention contains a rock oxide polymer and a white filler. (a siloxane polymer) The above-mentioned oxaxy oxy-polymer is a compound obtained by polymerizing at least one of the following formula (1), and the compound can be used only for one type; It is also possible to use two or more types of the first oxygen-containing compound in combination of two or more types. ❹

Si(X)P(R)4- p."式(1) 式()中X表不水解性基,^示碳數為1〜30之非 水解性之有機基,p表示Η之整數。當複數個 可相同亦可不同。當p為1或2時,複數傭可相同亦可不 同。 上述式⑴中之X通常為如下基:於過剩之水之共存下、 ,無觸媒之條件下,加熱至室溫⑽)〜⑽。㈣,水解而 基。 者進》縮合而可形成石夕氧鍵之 作為上述水解性基,可列舉燒敦基等。作為該院氧基之 具=可列舉碳數為1〜6之垸氧基等。作為該碳數為1〜6 之烷氧基,可列舉甲氧基、乙氧基或丙氧基等。 j =解性基亦可為貌氧基以外之水解性基Μ乍為該烧 乳基以外之水解性基之具趙例,可列舉氣或涘等之齒基、 乙醯基、羥基或異氰酸酯基等。 一作=非水解性之有機基,可列舉作為不易水解而穩 疋之疏水基的碳數為1〜3〇之有機基。 137746.doc •11· 200937123 作為上述碳數為丨〜%之有機基,可列舉:碳數為丨〜3〇之 烷基、_化烷基、芳香族取代烷基、芳基、具有乙烯基之 有機基、含有環氧基之有機基、含有胺基之有機基、或含 有毓基之有機基等。 作為上述碳數為丨〜”之烷基,可列舉甲基、乙基、丙 基、丁基、己基、環己基、辛基、戊基、癸基、十二烷 基、十四烷基、十六烷基、十八烷基或二十烷基等。作為 上述齒化烷基,可列舉氟化烷基、氣化烷基或溴化烷基 等。作為上述函化烷基之具體例,例如可列舉3_氣丙基、 6氣丙基6-氣己基或6,6,6-三氟己基等。作為上述芳香族 取代烷基,例如可列舉苄基或齒代苄基等。作為上述齒代 苄基,可列舉4-氣苄基或4-溴苄基等。作為上述芳基,例 如可列舉苯基、曱苯基、菜基或萘基等。 作為上述式(1)所表示之矽烷化合物之具體例,例如可 列舉:三苯基乙氧基矽烷、三曱基乙氧基矽烷、三乙基乙 氧基矽烷、三苯基甲氧基矽烷、三乙基曱氧基矽烷、乙基 二甲基甲氧基矽烷、曱基二乙基甲氧基矽烷、乙基二甲基 乙氧基矽烷、甲基二乙基乙氧基矽烷、苯基二甲基甲氧基 石夕垸、笨基二乙基甲氧基㈣、苯基:甲基乙氧基石夕院、 苯基二乙基乙氧基矽烷、甲基二苯基甲氧基矽烷、乙基二 苯基甲氧基矽烷、曱基二苯基乙氧基矽烷、乙基二苯基乙 氧基矽烷、第三丁氧基三甲基矽烷、丁氧基三甲基矽烷、 一甲基乙氧基矽烷、甲氧基二甲基乙烯基矽烷、乙氧基二 甲基乙烯基矽烷、二苯基二乙氧基矽烷、苯基二乙氧基矽 137746.doc 12 200937123 烷,二甲基二曱氧基矽烷、二乙醯氧基曱基矽烷二乙氧 基甲基矽烷、3-氣丙基二甲氧基甲基矽烷、氣甲基二乙氧 基甲基矽烷、二乙氧基二甲基矽烷、=乙醯氧基甲基乙烯 基矽烷、二乙氧基甲基乙烯基矽烷、二乙氧基二乙基矽 烷、二曱基二丙氧基矽烷、二甲氧基甲基苯基矽烷、甲基 三甲氧基矽烷、甲基三乙氧基矽烷、曱基_三_正丙氧基矽 烷、乙基三甲氧基矽烷、乙基三乙氧基矽烷、乙基三正 丙氧基矽烷、丙基三甲氧基矽烷、丙基三乙氧基矽烷、丙 © 1-三_正丙氧基矽烷、丁基三甲氧基矽烷、丁基三乙氧基 矽烷、丁基三丙氧基矽烷、異丁基三甲氧基矽烷異丁基 三乙氧基矽烷、異丁基三丙氧基矽烷、正己基三甲氧基矽 烷、正己基三乙氧基矽烷、正己基三丙氧基矽烷環己基 二甲氧基矽烷、環己基三乙氧基矽烷、環己基三丙氧基矽 烷辛基二甲氧基矽烷、辛基三乙氧基矽烷、辛基三丙氧 基矽烷、十二烷基三甲氧基矽烷、十二烷基三乙氧基矽 φ 烷、十一烷基二丙氧基矽烷、十四烷基三甲氧基矽烷、十 四院基三乙氧基石夕燒、十四烧基三丙氧基石夕炫、十六烧基 if 1基矽&、十六烷基三乙氧基矽&、十六烷基三丙氧 基矽烷、十八烷基三曱氧基矽烷、十八烷基三乙氧基矽 烷、十八烷基二丙氧基矽烷、二十烷基三曱氧基矽烷、二 十烧基二乙氧基石夕燒、二十炫基三丙氧基石夕烧、6氣己基 三甲氧基矽烷、6,6,6-三氟己基三曱氧基矽烷、苄基三甲 氧基矽烷、4-氣苄基三甲氧基矽烷、4_溴苄基-三正丙氧 基石夕燒、笨基二甲氧基發炫、苯基三乙氧基石夕垸、乙稀基 137746.doc • 13· 200937123 三甲氧基梦貌、乙嫌基=乙羞糞幼# 师丞氧基矽烷、γ-縮水甘油氧基丙 基三甲氧基石夕燒、γΐ基丙稀醯氧基丙基三乙氧基發燒、 Ν-β-(胺基乙基)个胺基丙基三甲氧 基)个胺基丙基三乙氧基錢、γ.胺基丙基三 烧、γ-胺基丙基三乙氧基石夕燒、甲基三乙酿氧基石夕燒、乙 . 基三乙酿氧基料、Ν·β·苯基个胺基丙基三甲氧基石夕燒、 . γ_氣丙基三甲氧基我、γ·疏基丙基三甲氧基㈣、三乙 $基矽烷、三甲氧基矽烷、三異丙氧基矽烷、三-正丙氧 基矽烷、三乙醯氧基矽烷、四甲氧基矽烷、四乙氧基矽 烧、四-正丙氧基石夕烧、四異丙氧基石夕院、四乙酿氧基石夕 炫、M3,4-環氧環己基)乙基三甲氧基石夕&、2(34環氧環 己基)乙基三甲氧基矽烷、3'缩水甘油氧基丙基三甲氧基矽 烷、3-縮水甘油氧基丙基曱基=乙氧基石夕院、3_縮水甘油 氧基丙基三乙氧基矽烷、三乙氧基矽烷基丙氧基氧雜環丁 烷、二甲氧基矽烷基丙氧基氧雜環丁烷、對苯乙烯基三甲 ❹氧基矽烷、3-甲基丙烯醯氧基丙基甲基二甲氧基矽烷、3_ 甲基丙稀酿氧基丙基三甲氧基矽烷、3_曱基丙烯醯氧基丙 基甲基二乙氧基石夕烧、3_甲基丙稀酿氧基丙基三乙氧基石夕 烷、3·丙烯醯氧基丙基三曱氧基矽烷、Ν2(胺基乙基 胺基丙基甲基二甲氧基矽烷、Ν_2 (胺基乙基)_3_胺基丙基 二甲氧基矽烷、Ν-2-(胺基乙基)_3_胺基丙基三乙氧基矽 烷、3-胺基丙基三甲氧基矽烷、3•胺基丙基三乙氧基矽 烷、3-二乙氧基矽烷基_ν_(1,3·二曱基·亞丁基)丙基胺、Ν_ 苯基-3-胺基丙基三甲氧基矽烷、3脲基丙基三乙氧基矽 137746.doc 200937123 院、3-巯基丙基曱基二曱氧基矽烷、3-酼基丙基三甲氧基 石夕烧、3·毓基丙基三乙氧基矽烷、3_異氰酸酯基丙基三乙 氧基矽烷或3-(三甲氧基矽烷基)丙基琥珀酸酐三甲氧基矽 院、3-乙烯氧基丙基三曱氧基矽烷或3·縮水甘油氧基丙基 曱基二甲氧基矽烷等。 上述妙氧烧聚合物更好的是使烷氧基矽烷縮合所得之烷 氧基矽烷縮合物。進而好的是,上述式中之至少一個X 為烧氧基,上述矽烷化合物為烷氧基矽烷,上述矽氧烷聚 合物為使該烷氧基矽烷縮合所得之烷氧基矽烷縮合物。當 使用該等烷氧基矽烷縮合物時,可進一步提高抗蝕膜之耐 熱性。當獲得烷氧基矽烷縮合物時,可使用一種烷氧基矽 院’亦可併用兩種以上。 上述式(1)所表示之矽烷化合物較好的是下述式(1A)所表 示之烧氧基>5夕烷。上述矽氧烷聚合物較好的是使下述式 (1A)所表示之烷氧基矽烷縮合所得之烷氧基矽烷縮合物。 Si(Rl)s(R2)t(R3)4-s_t …式(1A) 上述式(1A)中’ R1表示氫或碳數為丨〜儿之非水解性之有 機基’ R2表示烷氧基,尺3表示烷氧基以外之水解性基,s 表不0〜3之整數,t表示1〜4之整數,且s+t$4。當s為2或3 時’複數個R1可相同亦可不同,當(為2〜4時,複數個R2可 相同亦可不同。當s + g 2時,複數個R3可相同亦可不 同。 上述式(1A)中之R2及R3通常係如下基:於過剩之水之共 存下、且無觸媒之條件下’加熱至室溫(25〇c)〜1〇〇它時, 137746.doc •15- 200937123 水解而可生成石 夕醇基之基;或者進一步縮合而可形成矽氡 鍵之基。 作為上述式(1A)中之R2,可列舉作為上述式(1)中之又而 列舉之烧氧基。作為上述式(1A)中之R3,可列舉作為上述 式(1)中之X而列舉之烷氧基以外的水解性基。作為上述式 . (1A)中之R1,可列舉與上述式(1)中之R相同的非水解性之 * 有機基。 上述矽氧烷聚合物較好的是含有具有環狀醚基之矽氧烷 聚合物。上述具有環狀醚基之矽氧烷聚合物較好的是,藉 由使上述式(1)中之P為U的整數、且至少一個尺為具有環 2醚基之有機基的矽烷化合物聚合所得之矽氧烷聚合物。 當含有具有環狀醚基之矽氧烷聚合物時,可進一步提高抗 蝕膜之耐熱性。環狀醚基較好的是環氧基。 上述具有環狀喊基之有機基較㈣是含有具有環氧環己 烷骨架之有貞基。丨述具有環狀喊基之有機基較好的是具 ❿ 冑環氧環己院骨架之有機基。上述石夕氧烧聚合物較好的具 2環氧環己院骨架之石夕氧烧聚合物。上述具有環氧環己院 f架之錢燒聚合物較好的是,藉由使上述式⑴中之P為 的整數且至少一個R為具有環氧環己烧骨架之有機基 的石夕燒化台物聚合所得之石夕氧燒聚合物。當含有具有環氧 Z己烷骨架之矽氧烷聚合物時’可進一步提高抗蝕膜 熱性。 較好的疋,上述具有環狀醚基之矽氧烷聚合物具有在矽 原子上直接鍵結有碳原子之有機基,且該有機基之 137746.do< -16· 200937123 10〜80%具有環狀醚基。當具有環狀醚基之有機基之比例 未滿10%時’存在矽氧烷聚合物與其他成分之相容性下降 之情形。當具有環狀醚基之有機基之比例超過80%時,存 在抗敍膜之财久性下降之情形。 較好的是,上述具有環狀醚基之矽氧烷聚合物具有在矽 原子上直接鍵結有碳原子之有機基,且該有機基之 - 10 80/0具有環氧環己烷骨架。當具有環氧環己烷骨架之 有機基之比例未滿10%時,存在矽氧烷聚合物與其他成分 β <相容性下降之情形。當具有環氧環己烷骨架之有機基之 比例超過80%時,存在抗蝕膜之耐久性下降之情形。 上述式(1)所表示之矽烷化合物總計1〇〇 m〇1%中上述 式(1)所表示且上述式G)中之?為2的矽烷化合物之含量較 好的是5〜100 mol%i範圍内,更好的是2〇〜1〇〇 m〇i%之範 圍内。當上述式(1)所表示且上述式⑴中之?為2的石夕烧化 ο物之量過少時’存在抗蝕膜之耐龜裂性下降之情形。再 Φ 者,當上述式(1)所表示之矽烷化合物總計100 m〇l%中上 述式(1)所表不且上述式(1)中之?為2的矽烷化合物之含有 比例未滿mG1%時’上述式⑴所表示之钱化合物係 至少使用兩種。 上述矽氧烷聚合物之重量平均分子量較好的是 2000〜50000之範圍内,更好的是2〇〇〇〜嶋之範圍内。當 石夕氧烷聚合物之重量平均分子量過小時,存在抗蝕膜表現 出較两之黏性之情形。當石夕氧烧聚合物之重量平均分子量 過大時’存在石夕氧貌聚合物與其他成分之相容性下降之情 137746.doc -17- 200937123 形。 上述式(1)所表示之至少一種矽烷化合物中,含有上述 式⑴所表示且上述式⑴中之4 2的石夕烧化合物。 上述式(1)所表示之矽烷化合物總計100 mol%中,較好 的是上述式(丨)所表示且上述式(丨)中之p為2的矽烷化合物 之含量為5〜1〇〇 m〇i%2範圍内,更好的是其含量為2〇〜1〇〇 则1%之範圍内。當上述式⑴所表示且上述式⑴中之pA2 、元化ϋ物之量過少時,存在抗敍膜之耐熱龜裂性下降 障形再者’當上述式(1)所表示之矽烷化合物總計丨〇〇 m〇l%中上述式(1)所表示且上述式(1)中之?為2的矽烷化合 物之含有比例未滿100 —。/。時,上述式⑴所表示之石夕烷 化合物係至少使用兩種。 作為上述式(1)所表示且上述式(1)中之口為2的矽烷化合 物之具趙例,例如可列舉:二苯基二乙氧基㈣、二甲基 -甲氧基石夕烧、二乙氧基二甲基梦院、二乙氧基甲基乙缔 基石夕院、—乙氧基二乙基;、二甲基二丙氧基石夕院、二 甲氧基甲基苯基矽烷、3_縮水甘油氧基丙基甲基二乙氧基 石夕燒、N-2-(胺基乙基)_3_胺基丙基甲基二f氧基㈣或% 疏基丙基甲基二甲氧基矽烷等。 上述矽氧烷聚合物之重量平均分子量為1〇〇〇〜5〇〇〇〇之範 圍内。 當矽氧烷聚合物之重量平均分子量過小時,存在抗蝕膜 之黏性下降之情形。當矽氧烷聚合物之重量平均分子量過 大時,存在矽氧烷聚合物與其他成分之相容性下降之情 137746.doc -18- 200937123 形。上述矽氧烷聚合物之重量平均分子量之較佳上限為 20000 〇 上述矽氧烷聚合物更好的是使烷氧基矽烷縮合所得之烷 氧基矽烷縮合物。進而好的是,上述式(1)中之至少一個X 為烷氧基,上述矽烷化合物為烷氧基矽烷,上述矽氧烷聚 合物為使該烷氧基矽烷縮合所得之烷氧基矽烷縮合物。當 使用該等烧氧基錢縮合物時,可進—步提高抗#膜之财 熱性。當獲得烷氧基矽烷縮合物時,可使用一種烷氧基矽 烧’亦可併用兩種以上之烷氧基矽烷。 上述石夕乳烧聚合物較好的是具有不飽和雙鍵之石夕氧烧聚 合物。上述具有不飽和雙鍵之矽氧烷聚合物較好的是,藉 由使上述式(1)中之卩為丨〜3的整數、且至少一個尺為具有不 飽和雙鍵之有機基的矽烷化合物聚合所得之矽氧坑聚合 物0 當含有上述具有不飽和雙鍵之矽氧烷聚合物時,可消除 抗钱劑材料之顯影性及抗蝕膜之黏性。 上述矽氧烷聚合物較好的是具有酸酐基或羧基、以及不 飽和雙鍵之矽氧烷聚合物。上述具有酸酐基或羧基、以及 不飽和雙鍵之矽氧烷聚合物較好的是,藉由使上述式(1)中 之P為1〜3的整數且至少一個R為具有酸酐基或羧基之有機 基的矽烷化合物、與上述式(1)中之P為1〜3的整數且至少 一個R為具有不飽和雙鍵之有機基的碎烧化合物聚合所得 之矽氧烷聚合物。 δ含有上述具有酸針基或叛基、以及不飽和雙鍵之發氧 137746.doc -19- 200937123 院聚口物時,可進一步提高抗蝕劑材料之顯影性。進而, 返含有上述具有酸酐基或鲮基、以及不飽和雙鍵之矽氧烷 聚合物時,可填充較多之白色填料故可形成被光照射時 之光之反射率更高的抗餘膜。 上述矽氧烷聚合物較好的是具有環狀醚基之矽氧烷聚合 • 物。上述具有環狀醚基之矽氧烷聚合物較好的是,藉由使 . 上述式(1)中之p為1〜3的整數、且至少一個R為具有環狀醚 基之有機基的矽烷化合物聚合所得之矽氧烷聚合物。當含 冑具有環狀醚基之矽氧烷聚合物時,可進一步提高抗蝕膜 之耐熱性。環狀醚基較好的是環氧基。 上述具有環狀醚基之矽氧烷聚合物較好的是與上述具有 不飽和雙鍵之矽氧烷聚合物併用。又,上述具有環狀醚基 之矽氧烷聚合物較好的是與上述具有酸酐基或羧基以及 不飽和雙鍵之矽氧烷聚合物併用。 上述矽氧烷聚合物較好的是具有酸酐基或羧基、不飽和 〇 雙鍵、以及環狀醚基之矽氧烷聚合物。上述具有酸酐基或 羧基、不飽和雙鍵、以及環狀醚基之矽氧烷聚合物較好的 是,藉由使上述式(1)中之ρ為i~3的整數且至少一個r為具 有酸酐基或羧基之有機基的矽烷化合物、上述式〇)中之p 為1〜3的整數且至少一個R為具有不飽和雙鍵之有機基的矽 烷化合物、以及上述式(1)中之卩為〗〜3的整數且至少一個r 為具有環狀醚基之有機基的矽烷化合物聚合所得之矽氧烷 聚合物。當含有具有酸酐基或羧基、不飽和雙鍵、以及環 狀喊基之石夕氧统聚合㈣,可進一步提高抗Μ膜之对熱密 137746.doc •20- 200937123 著性及電絕緣性。環狀醚基較好的是環氧基》 上述具有不飽和雙鍵之矽氧烷聚合物,上述具有酸酐基 或羧基、及不飽和雙鍵之矽氧烷聚合物,以及上述具有酸 酐基或羧基、不飽和雙鍵、及環狀醚基之矽氧烷聚合物較 好的是,分別具有在矽原子上直接鍵結有碳原子之有機 基’且該有機基的5〜80%具有不飽和雙鍵。藉由使用在 5〜80%之範圍内含有具有不飽和雙鍵之有機基的矽氧院聚 合物’可進一步提高抗蝕劑材料之顯影性及抗蝕膜之耐龜 裂性。不飽和雙鍵較好的是烯烴雙鍵。 上述具有酸Sf基或缓基、及不飽和雙鍵之碎氧烧聚合物 以及上述具有酸肝基或羧基、不飽和雙鍵、及環狀_基之 石夕氧烧聚合物較好的是,具有在矽原子上直接鍵結有碳原 子之有機基’且該有機基之1〜25%具有酸酐基或羧基。藉 由使用在1〜25%之範圍内含有具有酸酐基或羧基之有機基 的矽氧烷聚合物,可進一步提高抗蝕膜之耐熱密著性及電 絕緣性。 上述具有環狀醚基之矽氧烧聚合物以及上述具有酸酐基 或羧基、不飽和雙鍵、及環狀醚基之矽氧烷聚合物較好的 是’具有在矽原子上直接鍵結有碳原子之有機基,且該有 機基之5〜80%具有環狀醚基。當具有環狀醚基之有機基之 比例未滿5%時,存在無法充分地獲得抗蝕膜之耐熱密著 陡的情形。當具有環狀醚基之有機基之比例超過80°/。時, 存在抗餘劑材料之顯影性降低之情形。 本發明之抗蝕劑材料中所含之樹脂成分之固形物酸值 137746.doc -21 - 200937123 (mg KOH/g)與環氧當量(g/eq)之積較好的是處於 30000-500000之範圍内。藉由使固形物酸值與環氧當量之 積處於30000〜500000之範圍内,可進一步提高抗蝕膜之電 絕緣性。上述所謂「樹脂成分」,具體而言係指抗蝕劑材 料中所含之白色填料以外之樹脂成分。 抗#劑材料較好的是含有具有酸酐基或羧基、以及不飽 • 和雙鍵之樹脂。當含有上述具有酸酐基或羧基、以及不飽 和雙鍵之樹脂時,可進一步提高抗蝕劑材料之顯影性,且 © 可降低抗姓膜之黏性。 當石夕氧燒聚合物為具有環氧基之矽氧烷聚合物,且含有 上述具有酸酐基或羧基、以及不飽和雙鍵之樹脂時,樹脂 成分之固形物酸值(mg KOH/g)與樹脂成分之環氧當量 (g/eq)之積較好的是處於25000〜100000之範圍内。上述所 謂「樹脂成分」’係指樹脂組合物中所含之白色填料以外 之樹脂成分。此時’可進一步提高抗蝕膜之耐久性。若上 ❹ 述積小於25000,則存在矽氧烷聚合物與其他成分之相容 性下降、或預烘烤後之抗餘膜表現出較高之黏性的情形。 若上述積大於100000,則存在抗蝕膜之耐久性下降之情 形。 本發明之樹脂組合物中亦可含有硬化促進劑、以使環狀 醚基與酸酐基或羧基之反應容易地進行。 (白色填料) 本發明之抗蝕劑材料中所含之白色填料只要為白色則並 無特別限定》 137746.doc -22- 200937123 作為白色填料,例如可列舉: 鋇、鈦醆鋇、sA 虱化鈦、滑石、硫酸 梦、黏土、碳酸:微粉狀氧切、非晶性二氧化 鋅、氮化is帛碳㈣、氧化#、氫氧仙、氫氧化 鮮氮化紹、氮切、氮化领 化錯、氨氧化鎮、雲母、Φ母粉2卷末、石夕酸錯、氧 料等。其中,二氧化:綱粉末或有機樹脂填 料可單獨使用二 反射率而更佳。白色填 平珣便用,亦可併用兩種以上。 :為=樹脂填料’可列舉:聚苯乙稀系有機樹脂 有機樹Π 酸S旨系有機樹脂填料、(苯并则系 樹脂填料丙稀酸橡膝系有機樹脂填料或橡勝系有機 相對於上述石夕氧院聚合物1〇〇重量份,上述白色填料之 3量較好的是100〜1500重量份之範圍内,更好的是 100〜700重量份之範圍内,尤其好的是⑽〜卿重量份之範 圍内。若白色填料之量過少,則存在無法充分地提高抗敍 φ 膜之反射率之情形。若白色填料之量過多,則存在抗蚀劑 材料之顯影性下降之情形。當石夕氧燒聚合物為具有不飽和 雙鍵之石夕氧燒聚合物時,可高密度地填充白色填料而不會 過於降低抗姓劑材料之硬化性。例如,相對於具有不飽和 雙鍵之矽氧烷聚合物100重量份,可於3〇〇〜15〇〇重量份之 範圍内添加上述白色填料。 (其他成分) 本發明之抗蝕劑材料較好的是含有聚合起始劑。聚合起 始劑只要係藉由外部刺激使樹脂組合物中之交聯成分交聯 137746.doc -23- 200937123 者則並無特別限定。聚合起始劑可單獨使用,亦可併用兩 種以上。作為上述外部刺激,可列舉:熱、可見光線或紫 外線等之光、超音波或微波等。上述聚合起始劑較好的是 藉由光之照射而使抗蝕劑材料中之交聯成分交聯的光聚合 起始劑。Si(X)P(R)4-p." Formula (1) wherein X represents a non-hydrolyzable group, a non-hydrolyzable organic group having a carbon number of 1 to 30, and p represents an integer of Η . When plural, they may be the same or different. When p is 1 or 2, the plural commissions may be the same or different. The X in the above formula (1) is usually a group which is heated to room temperature (10) to (10) in the presence of excess water in the absence of a catalyst. (d), hydrolysis based. The condensed water can form a sulphuric oxygen bond. Examples of the hydrolyzable group include a burnt base. The oxy group having a carbon number of 1 to 6 may be exemplified as the oxy group of the compound. The alkoxy group having 1 to 6 carbon atoms may, for example, be a methoxy group, an ethoxy group or a propoxy group. j = the cleavable group may be a hydrolyzable group other than the morpho oxy group, and examples of the hydrolyzable group other than the saponin group include a dentate group such as a gas or a hydrazine group, an acetamino group, a hydroxyl group or an isocyanate group. . The non-hydrolyzable organic group is an organic group having a carbon number of 1 to 3 Å which is a hydrophobic group which is hard to be hydrolyzed and stabilized. 137746.doc •11· 200937123 The above-mentioned organic group having a carbon number of 丨% is exemplified by an alkyl group having a carbon number of 丨~3〇, an alkyl group, an aromatic substituted alkyl group, an aryl group, and a vinyl group. The organic group, the organic group containing an epoxy group, the organic group containing an amine group, or an organic group containing a mercapto group or the like. Examples of the alkyl group having a carbon number of 丨~" include a methyl group, an ethyl group, a propyl group, a butyl group, a hexyl group, a cyclohexyl group, an octyl group, a pentyl group, a decyl group, a dodecyl group, and a tetradecyl group. Cetyl group, octadecyl group, eicosyl group, etc. Examples of the above-mentioned dentate alkyl group include a fluorinated alkyl group, a vaporized alkyl group or a brominated alkyl group. Examples of the aromatic-substituted alkyl group include a 3-benzyl group, a 6-propyl group, a 6-cyclohexyl group, and a 6,6,6-trifluorohexyl group. Examples of the aromatic substituted alkyl group include a benzyl group and a benzobenzyl group. Examples of the benzobenzyl group include a 4-benzylidene group and a 4-bromobenzyl group. Examples of the aryl group include a phenyl group, a fluorenylphenyl group, a decyl group, a naphthyl group, and the like. Specific examples of the decane compound to be represented include, for example, triphenylethoxy decane, tridecyl ethoxy decane, triethyl ethoxy decane, triphenyl methoxy decane, and triethyl hydrazine. Base decane, ethyl dimethyl methoxy decane, decyl diethyl methoxy decane, ethyl dimethyl ethoxy decane, methyl diethyl ethoxy decane, Dimethyl methoxy oxime, stupidyl diethyl methoxy (tetra), phenyl: methyl ethoxy shixi, phenyl diethyl ethoxy decane, methyl diphenyl methoxy decane , ethyl diphenyl methoxy decane, decyl diphenyl ethoxy decane, ethyl diphenyl ethoxy decane, third butoxy trimethyl decane, butoxy trimethyl decane, Methyl ethoxy decane, methoxy dimethyl vinyl decane, ethoxy dimethyl vinyl decane, diphenyl diethoxy decane, phenyl diethoxy fluorene 137746.doc 12 200937123 alkane, Dimethyldimethoxy decane, diethyl methoxy decyl decane diethoxy methyl decane, 3-cyclopropyl dimethoxymethyl decane, gas methyl diethoxy methyl decane, two Ethoxy dimethyl decane, = ethoxycarbonyl methyl vinyl decane, diethoxy methyl vinyl decane, diethoxy diethyl decane, dimercapto dipropoxy decane, dimethoxy Methyl phenyl decane, methyl trimethoxy decane, methyl triethoxy decane, decyl _ tri-n-propoxy decane, ethyl trimethoxy decane, ethyl triethoxy Base decane, ethyl tri-n-propoxy decane, propyl trimethoxy decane, propyl triethoxy decane, propylene 1- 1-tri-n-propoxy decane, butyl trimethoxy decane, butyl triethyl Oxydecane, butyltripropoxydecane, isobutyltrimethoxydecane isobutyltriethoxydecane, isobutyltripropoxydecane, n-hexyltrimethoxydecane, n-hexyltriethoxy Decane, n-hexyltripropoxydecanecyclohexyldimethoxydecane, cyclohexyltriethoxydecane, cyclohexyltripropoxydecaneoctyldimethoxydecane, octyltriethoxydecane, octyl Tripropoxydecane, dodecyltrimethoxydecane, dodecyltriethoxysulfonium alkane, undecyldipropoxydecane,tetradecyltrimethoxydecane, fourteen yards Triethoxy zephyr, tetradecyl tripropoxy sulphate, hexadecanyl if 1 hydrazine & hexadecyltriethoxy hydrazine & hexadecyltripropoxydecane , octadecyltrimethoxy decane, octadecyltriethoxy decane, octadecyldipropoxydecane, eicosyltrimethoxy decane Twenty-octyl diethoxy zephyr, decantyl tripropoxy zebra, 6 hexyl methoxy decane, 6,6,6-trifluorohexyltrimethoxy decane, benzyl trimethoxy矽, 4- benzyl benzyl trimethoxy decane, 4-bromobenzyl-tri-n-propoxy oxalate, stupid dimethoxy oxime, phenyl triethoxy sulphur, ethylene 137746.doc • 13· 200937123 Trimethoxy dream, B suspected base = Yimei feces #师丞oxydecane, γ-glycidoxypropyltrimethoxy zexi, γ-mercaptopropyloxypropyltriethyl Alkyloxy, Ν-β-(aminoethyl)aminopropyltrimethoxy)aminopropyltriethoxy ketone, γ.aminopropyl trisole, γ-aminopropyltri Ethoxylated sulphur, methyl triethyl ethoxylate, Ethyl ethoxylate, Ν·β·phenylaminopropyltrimethoxy sulphide, γ _ propyl propyl Oxygen I, γ-benzyl propyl trimethoxy (tetra), triethyl hexadecane, trimethoxy decane, triisopropoxy decane, tri-n-propoxy decane, triethoxy decane, tetramethyl Oxydecane, tetraethoxy oxime Tetra-n-propoxy zephyr, tetraisopropoxy zexi, tetraethyl ethoxylate, M3,4-epoxycyclohexyl)ethyltrimethoxy oxime & 2,34 epoxycyclohexyl Ethyltrimethoxydecane, 3' glycidoxypropyltrimethoxydecane, 3-glycidoxypropyl fluorenyl = ethoxy ishixiyuan, 3_glycidoxypropyl triethoxy Decane, triethoxydecyloxypropoxybutane, dimethoxydecyloxypropoxybutane, p-styryltrimethyloxydecane, 3-methylpropenyloxy Propylmethyldimethoxydecane, 3-methylpropenyloxypropyltrimethoxydecane, 3-mercaptopropenyloxypropylmethyldiethoxylate, 3-methylpropene Oxyl propyl triethoxy oxalate, 3 · propylene methoxy propyl trimethoxy decane, hydrazine 2 (aminoethylamino propyl methyl dimethoxy decane, Ν 2 (aminoethyl) )_3_Aminopropyl dimethoxydecane, anthracene-2-(aminoethyl)_3_aminopropyltriethoxydecane, 3-aminopropyltrimethoxydecane, 3•amino group Propyltriethoxydecane, 3-diethoxy矽alkyl_ν_(1,3·didecyl-butylene)propylamine, Ν_phenyl-3-aminopropyltrimethoxydecane, 3-ureidopropyltriethoxyphosphonium 137746.doc 200937123 , 3-mercaptopropyl decyl decyloxydecane, 3-mercaptopropyltrimethoxy zeoxime, 3·mercaptopropyltriethoxy decane, 3-isocyanatepropyltriethoxy decane or 3-(trimethoxydecyl)propyl succinic anhydride trimethoxy fluorene, 3-vinyloxypropyl trimethoxy decane or 3 · glycidoxypropyl decyl dimethoxy decane. More preferably, the above-mentioned aromatized polymer is an alkoxydecane condensate obtained by condensing an alkoxydecane. Further, it is preferred that at least one X in the above formula is an alkoxy group, the decane compound is an alkoxy decane, and the oxirane polymer is an alkoxy decane condensate obtained by condensing the alkoxy decane. When these alkoxydecane condensates are used, the heat resistance of the resist film can be further improved. When an alkoxydecane condensate is obtained, one type of alkoxy oxime may be used, or two or more types may be used in combination. The decane compound represented by the above formula (1) is preferably an alkoxy group > pentane represented by the following formula (1A). The alkoxysilane polymer is preferably an alkoxydecane condensate obtained by condensing an alkoxydecane represented by the following formula (1A). Si(Rl)s(R2)t(R3)4-s_t Formula (1A) In the above formula (1A), 'R1 represents hydrogen or a non-hydrolyzable organic group having a carbon number of 丨~, and R2 represents an alkoxy group. , Rule 3 represents a hydrolyzable group other than the alkoxy group, s represents an integer of 0 to 3, and t represents an integer of 1 to 4, and s + t$4. When s is 2 or 3, the plural R1s may be the same or different. When (2 to 4), the plurality of R2 may be the same or different. When s + g 2 , the plurality of R3 may be the same or different. R2 and R3 in the above formula (1A) are usually as follows: under the condition of excess water coexistence and without catalyst, 'heating to room temperature (25〇c)~1〇〇, 137746.doc • 15- 200937123, which can be hydrolyzed to form a group of the base group; or further condensed to form a group of a hydrazone bond. As R2 in the above formula (1A), a calcination as exemplified in the above formula (1) In the above formula (1A), a hydrolyzable group other than the alkoxy group which is exemplified as the X in the above formula (1), and R1 in the above formula (1A) can be mentioned. The non-hydrolyzable organic group of the same formula R in the above formula (1). The above-mentioned alkoxysilane polymer preferably contains a rhodium oxide polymer having a cyclic ether group. The alkane polymer is preferably a decane which is an integer of U in the above formula (1) and which is an integer of U and at least one of which is an organic group having a ring 2 ether group. The oxirane polymer obtained by polymerizing a compound can further improve the heat resistance of the resist film when it contains a siloxane polymer having a cyclic ether group. The cyclic ether group is preferably an epoxy group. The organic group (4) is an organic group having an epoxycyclohexane skeleton. The organic group having a cyclic ring group is preferably an organic group having an anthracene epoxy ring. The Xixi oxygen-fired polymer is preferably a stone-oxygenated polymer having a 2-epoxy ring hexagram skeleton. The above-mentioned money-burning polymer having an epoxy ring hexanin f frame is preferably obtained by making the above formula (1) Wherein P is an integer and at least one R is an anthrax oxidized polymer obtained by polymerizing a ceramsite-containing material having an organic group of an epoxy ring-fired skeleton. When it contains an oxygen having an epoxy Z-hexane skeleton In the case of an alkane polymer, the thermal properties of the resist film can be further improved. Preferably, the above-mentioned cyclooxygenated polymer having a cyclic ether group has an organic group to which a carbon atom is directly bonded to a germanium atom, and the organic group is 137746.do< -16· 200937123 10~80% has a cyclic ether group. When the ratio of the organic group of the base is less than 10%, the compatibility of the siloxane polymer with other components is lowered. When the ratio of the organic group having a cyclic ether group exceeds 80%, there is a film resistant to the film. In the case where the financial durability is lowered, it is preferred that the above-mentioned naphthenic polymer having a cyclic ether group has an organic group to which a carbon atom is directly bonded to a ruthenium atom, and the organic group has -10 80/0 Epoxy cyclohexane skeleton. When the proportion of the organic group having an epoxycyclohexane skeleton is less than 10%, there is a case where the compatibility of the siloxane polymer with other components β < When the ratio of the organic group of the hexane skeleton exceeds 80%, the durability of the resist film may be lowered. The decane compound represented by the above formula (1) is 1 〇〇 m 〇 1% in the above formula (1) and in the above formula G). The content of the decane compound of 2 is preferably in the range of 5 to 100 mol%, more preferably in the range of 2 〇 to 1 〇〇 m〇i%. What is represented by the above formula (1) and in the above formula (1)? When the amount of the material is too small, the crack resistance of the resist film is lowered. Further, when Φ is a total of 100 m〇l% of the decane compound represented by the above formula (1), which is represented by the above formula (1) and in the above formula (1)? When the content ratio of the decane compound of 2 is less than mG1%, at least two kinds of the money compounds represented by the above formula (1) are used. The weight average molecular weight of the above siloxane polymer is preferably in the range of from 2,000 to 50,000, more preferably in the range of from 2 to 嶋. When the weight average molecular weight of the oxalate polymer is too small, there is a case where the resist film exhibits a more viscous property. When the weight average molecular weight of the Shixi oxygenated polymer is too large, the compatibility of the polymer with other components is reduced. 137746.doc -17- 200937123 Shape. The at least one decane compound represented by the above formula (1) contains the cerium compound represented by the above formula (1) and 4 in the above formula (1). In the total of 100 mol% of the decane compound represented by the above formula (1), it is preferred that the content of the decane compound represented by the above formula (丨) and p in the above formula (丨) is 5 to 1 〇〇m. In the range of 〇i%2, it is better that the content is in the range of 2〇~1〇〇1%. When the amount of the pA2 and the elemental bismuth in the above formula (1) is too small, the heat-resistant cracking resistance of the anti-supplement film is further reduced, and the total decane compound represented by the above formula (1)丨〇〇m〇l% in the above formula (1) and in the above formula (1)? The content of the decane compound of 2 is less than 100%. /. At the time, at least two kinds of the astaxane compounds represented by the above formula (1) are used. Examples of the decane compound represented by the above formula (1) and having a valence of 2 in the above formula (1) include diphenyldiethoxy (tetra), dimethyl-methoxy sulphur, and diethyl Oxy-dimethyl dimethyl dream, diethoxymethyl ethyl phenyl sylvestre, ethoxydiethyl; dimethyldipropoxy sylvestre, dimethoxymethylphenyl decane, 3 _ glycidoxypropylmethyldiethoxylate, N-2-(aminoethyl)_3_aminopropylmethyldi-foxy (tetra) or % sulfopropylmethyldimethoxy Base decane and the like. The above-mentioned siloxane polymer has a weight average molecular weight of from 1 Å to 5 Å. When the weight average molecular weight of the siloxane polymer is too small, there is a case where the viscosity of the resist film is lowered. When the weight average molecular weight of the siloxane polymer is too large, there is a decrease in the compatibility of the siloxane polymer with other components 137746.doc -18- 200937123. A preferred upper limit of the weight average molecular weight of the above siloxane polymer is 20,000 〇. The above siloxane polymer is more preferably an alkoxy decane condensate obtained by condensing an alkoxy decane. Further, it is preferred that at least one X in the above formula (1) is an alkoxy group, the above decane compound is an alkoxydecane, and the above siloxane polymer is a condensation of an alkoxy decane obtained by condensing the alkoxy decane. Things. When these alkoxylated condensates are used, the heat resistance of the anti-film can be further improved. When an alkoxydecane condensate is obtained, one alkoxy oxime may be used. Alternatively, two or more alkoxydecane may be used in combination. The above-mentioned Shishi milk-fired polymer is preferably a shihua oxygen-fired polymer having an unsaturated double bond. The above naphthenic polymer having an unsaturated double bond is preferably a decane having an organic group having an unsaturated double bond by making the oxime in the above formula (1) an integer of 丨 〜3 and at least one ft. The oxygen crater polymer 0 obtained by polymerizing the compound can eliminate the developability of the anti-money material and the viscosity of the resist film when the above-mentioned siloxane polymer having an unsaturated double bond is contained. The above siloxane polymer is preferably a siloxane polymer having an acid anhydride group or a carboxyl group and an unsaturated double bond. The above naphthenic polymer having an acid anhydride group or a carboxyl group and an unsaturated double bond is preferably one obtained by making P in the above formula (1) an integer of from 1 to 3 and at least one R having an acid anhydride group or a carboxyl group. The organic decane compound, a oxoxane polymer obtained by polymerizing a calcined compound having an integer of from 1 to 3 in the above formula (1) and at least one R being an organic group having an unsaturated double bond. When δ contains the above-mentioned oxygenated 137746.doc -19-200937123 sulphide having an acid needle group or a thiol group and an unsaturated double bond, the developability of the resist material can be further improved. Further, when the above-mentioned naphthenic polymer having an acid anhydride group or a mercapto group and an unsaturated double bond is contained, a large amount of white filler can be filled, so that a resist film having a higher reflectance of light when irradiated with light can be formed. . The above naphthenic polymer is preferably a polyoxyalkylene polymer having a cyclic ether group. The above-mentioned alkoxysilane polymer having a cyclic ether group is preferably obtained by using p in the above formula (1) as an integer of 1 to 3 and at least one R is an organic group having a cyclic ether group. The naphthenic polymer obtained by polymerizing a decane compound. When the rhodium-containing alkane polymer having a cyclic ether group is contained, the heat resistance of the resist film can be further improved. The cyclic ether group is preferably an epoxy group. The above naphthenic polymer having a cyclic ether group is preferably used in combination with the above-mentioned nonoxyxane polymer having an unsaturated double bond. Further, the above-mentioned naphthenic polymer having a cyclic ether group is preferably used in combination with the above-described naphthenic polymer having an acid anhydride group or a carboxyl group and an unsaturated double bond. The above siloxane polymer is preferably a siloxane polymer having an acid anhydride group or a carboxyl group, an unsaturated hydrazine double bond, and a cyclic ether group. The above naphthenic polymer having an acid anhydride group or a carboxyl group, an unsaturated double bond, and a cyclic ether group is preferably such that ρ in the above formula (1) is an integer of i to 3 and at least one r is a decane compound having an organic group of an acid anhydride group or a carboxyl group, a decane compound in which p is an integer of 1 to 3 and at least one R is an organic group having an unsaturated double bond, and the above formula (1) The oxime polymer obtained by polymerizing a decane compound having an organic group having a cyclic ether group is an integer of 〜3. When it contains an acid anhydride group or a carboxyl group, an unsaturated double bond, and a ring-shaped radical (4), the thermal resistance of the anti-caries film can be further improved. The cyclic ether group is preferably an epoxy group. The above-mentioned nonoxyl alkane polymer having an unsaturated double bond, the above-mentioned alkoxyalkyl polymer having an acid anhydride group or a carboxyl group, and an unsaturated double bond, and the above-mentioned anhydride group or The methoxy group polymer having a carboxyl group, an unsaturated double bond, and a cyclic ether group preferably has an organic group in which a carbon atom is directly bonded to a ruthenium atom, and 5 to 80% of the organic group has no Saturated double bond. The developability of the resist material and the crack resistance of the resist film can be further improved by using a cerium oxide polymer having an organic group having an unsaturated double bond in the range of 5 to 80%. The unsaturated double bond is preferably an olefinic double bond. Preferably, the above-mentioned oxy-fired polymer having an acid Sf group or a slow group and an unsaturated double bond, and the above-mentioned oxalate-oxygenated polymer having an acid-hepatic group or a carboxyl group, an unsaturated double bond, and a cyclic group are preferably An organic group having a carbon atom directly bonded to a ruthenium atom and having 1 to 25% of the organic group has an acid anhydride group or a carboxyl group. By using a siloxane polymer having an organic group having an acid anhydride group or a carboxyl group in the range of 1 to 25%, the heat-resistance and electrical insulating properties of the resist film can be further improved. The above oxime-oxygenated polymer having a cyclic ether group and the above-mentioned oxirane polymer having an acid anhydride group or a carboxyl group, an unsaturated double bond, and a cyclic ether group preferably have a bond directly bonded to a ruthenium atom. An organic group of a carbon atom, and 5 to 80% of the organic group has a cyclic ether group. When the ratio of the organic group having a cyclic ether group is less than 5%, there is a case where the heat resistance of the resist film is not sufficiently obtained. When the proportion of the organic group having a cyclic ether group exceeds 80 ° /. At the time, there is a case where the developability of the anti-residue material is lowered. The product of the solid content of the resin component contained in the resist material of the present invention is 137746.doc -21 - 200937123 (mg KOH / g) and the epoxy equivalent (g / eq) is preferably at 30,000 - 500,000. Within the scope. By making the product of the solid acid value and the epoxy equivalent in the range of 30,000 to 500,000, the electrical insulating property of the resist film can be further improved. The above-mentioned "resin component" specifically means a resin component other than the white filler contained in the resist material. The anti-agent material preferably contains a resin having an acid anhydride group or a carboxyl group, and an unsaturated and double bond. When the above resin having an acid anhydride group or a carboxyl group and an unsaturated double bond is contained, the developability of the resist material can be further improved, and the adhesion of the anti-surname film can be lowered. The acid value of the solid content of the resin component (mg KOH/g) when the oxy-oxygenated polymer is an epoxy group-containing oxirane polymer and contains the above-mentioned resin having an acid anhydride group or a carboxyl group and an unsaturated double bond. The product of the epoxy equivalent (g/eq) of the resin component is preferably in the range of 25,000 to 100,000. The term "resin component" as used herein means a resin component other than the white filler contained in the resin composition. At this time, the durability of the resist film can be further improved. If the upper 述 product is less than 25,000, there is a case where the compatibility of the siloxane polymer with other components is lowered, or the residual film after prebaking exhibits a high viscosity. If the above product is more than 100,000, the durability of the resist film may be lowered. The resin composition of the present invention may further contain a curing accelerator to facilitate the reaction of the cyclic ether group with the acid anhydride group or the carboxyl group. (White Filler) The white filler contained in the resist material of the present invention is not particularly limited as long as it is white. 137746.doc -22- 200937123 As a white filler, for example, ruthenium, titanium ruthenium, sA bismuth Titanium, talc, sulfuric acid dream, clay, carbonic acid: micro-powder oxygen-cutting, amorphous zinc dioxide, niobium niobium (four), oxidation #, oxyhydroxide, neodymium hydroxide, nitrogen cutting, nitriding Leading fault, ammonia oxidation town, mica, Φ mother powder 2 rolls, Shixi acid wrong, oxygen materials. Among them, the dioxide:organic powder or the organic resin filler can be preferably used alone with two reflectances. White can be used to fill the sputum, and it can be used in combination of two or more. : = resin filler' can be exemplified by: polystyrene-based organic resin, organic tree, acid S, organic resin filler, (benzoic resin, filler, acrylic, rubber, rubber, rubber, organic, rubber, rubber, organic, organic The amount of the above-mentioned white filler is preferably in the range of 100 to 1,500 parts by weight, more preferably in the range of 100 to 700 parts by weight, particularly preferably (10). If the amount of the white filler is too small, the reflectance of the anti-slip film may not be sufficiently improved. If the amount of the white filler is too large, the developability of the resist material may be lowered. When the Shixia oxy-fired polymer is a diarrhea polymer having an unsaturated double bond, the white filler can be filled with high density without excessively reducing the hardenability of the anti-surname material. For example, relative to having an unsaturated The white filler may be added in an amount of from 3 to 15 parts by weight based on 100 parts by weight of the double-bonded siloxane polymer. (Other components) The resist material of the present invention preferably contains a polymerization initiation. Polymerization initiator The cross-linking component in the resin composition is crosslinked by an external stimulus. 137746.doc -23- 200937123 is not particularly limited. The polymerization initiator may be used singly or in combination of two or more. Examples thereof include light such as heat, visible light or ultraviolet light, ultrasonic waves, microwaves, etc. The above polymerization initiator is preferably a photopolymerization which crosslinks crosslinking components in a resist material by irradiation of light. Starting agent.

相對於上述矽氧烧聚合物1 〇〇重量份,上述聚合起始劑 之含量較好的是0.1〜100重量份之範圍内。若聚合起始劑 之量過少,則存在無法藉由外部刺激使抗蝕劑材料充分地 硬化之情形。若聚合起始劑之量過多,則存在難以均勻地 塗佈抗蝕劑材料、或顯影後產生殘渣之情形。 上述聚合起始劑較好的是藉由光之照射而產生自由基之 光自由基產生劑。當使用光自由基產生劑時,可利用藉由 曝光而由光自由基產生劑所產生之自由基來使矽氧烷聚合 物交聯,從而使抗蝕劑材料硬化。又,於基板上塗佈抗蝕 劑材料並局部地曝光、顯影,藉此可形成圖案膜。 作為上述光自由基產生劑之具體例,可列舉:醯基氧化 膦衍生物、函甲基化三畊衍生物、幽甲基化嘮二唑衍生 物米唾何生物、安息香、安息香燒基鍵類、葱酿衍生 物、苯并蒽酮衍生物、二苯甲_生物、#乙晴生物、 9:氧硫如星衍生物、苯甲酸酯衍生物、吖啶衍生物、啡畊 何生物、二茂欽衍生物、α_胺院基苯㈣化合物或將衍生 物等。光自由基產生劑可單獨使用,亦可併用兩種以上。 作為上述醯基氧化膦衍生物,可列舉:2,4,6-三仏2燒 基苯甲酿基二芳基氧化膦'2,4,6_三甲基苯甲醯基二苯基 I37746.doc -24- 200937123The content of the above polymerization initiator is preferably in the range of 0.1 to 100 parts by weight based on 1 part by weight of the above-mentioned oxy-oxygenated polymer. If the amount of the polymerization initiator is too small, there is a case where the resist material cannot be sufficiently cured by external stimulation. If the amount of the polymerization initiator is too large, it may be difficult to apply the resist material uniformly or to generate a residue after development. The above polymerization initiator is preferably a photoradical generator which generates a radical by irradiation of light. When a photoradical generator is used, the radical material can be crosslinked by radicals generated by a photoradical generator by exposure to harden the resist material. Further, a resist material is applied onto the substrate and partially exposed and developed, whereby a pattern film can be formed. Specific examples of the photo-radical generating agent include a mercaptophosphine oxide derivative, a methylated tri-negative derivative, a sec-methylated oxadiazole derivative, a rice saliva, a benzoin, and a benzoin base bond. Class, onion-derived derivatives, benzofluorenone derivatives, benzophenone-bio, #乙晴生物, 9: oxysulfur such as star derivatives, benzoate derivatives, acridine derivatives, cultivating organisms , a dimoxine derivative, an α-amine-based benzene (tetra) compound or a derivative thereof. The photoradical generator may be used singly or in combination of two or more. As the above fluorenyl phosphine oxide derivative, 2,4,6-trioxazolidine benzoyldiarylphosphine oxide '2,4,6-trimethylbenzimidyldiphenyl I37746 .doc -24- 200937123

氧化膦(例如,BASF公司製造、「Lucirin ΤΡΟ」)、雙 (2,4,6-三C1-2烷基苯甲醯基)芳基氧化膦、雙(2,4,6-三甲基 苯甲醯基)-苯基氧化膦(例如,汽巴精化公司製造之 「Irgacure 819」)、2,4,6-三C1-2烷基苯甲醢基芳基烷氧基 氧化膦、2,4,6-三甲基苯甲醯基苯基乙氧基氧化膦、雙 (2,6-二C1-2烷氧基苯曱醯基)_支鏈狀C6-12烷基氧化膦、 雙(2,6- 一甲氧基苯甲醯基)_2,4,4-三甲基戊基氧化膦 (BAPO)、雙(2,4,6-三C1-2烷基苯甲酿基)Cl-6烷基氧化 膦、雙(2,4,6-三甲基苯甲醯基)甲基氧化膦、雙(2 4 6三甲 基苯甲醯基)乙基氧化膦或雙(2,4,6-三甲基苯甲醯基)_Ν_τ 基氧化膦等。 作為上述齒甲基化三ρ井衍生物,可列舉:2_(4_甲氧基苯 基)-4,6-雙(三氣甲基)_均三畊、2_(4_甲氧基萘基)46•雙 (三氣甲基)-均三_、2-(4·乙氧基萘基)·4 6·雙(三氣甲基)_ 均二畊、或2-(4-乙氧基碳基萘基)_46·雙(三氣甲基卜均三 畊等。 作為上述咪唾衍生物’可列舉:2_(鄰氣苯基)_4,5_二苯 基㈣二聚物、鄰氣笨基)·4,5•雙(3._甲氧基笨基)口米嗅 二聚物、2-(鄰氟苯基)-4’5·二苯基咪唑二聚物、2_(鄰甲氧 基苯基K5-二笨基咪吐二聚物、或2_(鄰甲氧基苯基)_4,5_ 二苯基咪唑二聚物等。 安息 作為上述安息香烷基醚類,可列舉:安息香曱鲢 香苯醚、安息香異丁醚或安息香異丙醚等。 作為上述該衍生物,可列舉:2H^、2_乙基葱 137746.doc 200937123 酿、2-第三丁基蒽醌或ι_氣蒽醌等。 作為上述二苯甲酮衍生物,可列舉:二苯甲鲷、米其勒 酮、2-甲基二苯甲酮、3·曱基二苯曱嗣、4甲基二苯甲 酮、2-氣二苯曱酮、4-溴二苯甲酮或2_羧基二苯甲_等。Phosphine oxide (for example, manufactured by BASF, "Lucirin"), bis(2,4,6-tri-C1-2 alkylbenzylidene) arylphosphine oxide, bis(2,4,6-trimethyl) Benzyl hydrazino)-phenylphosphine oxide (for example, "Irgacure 819" manufactured by Ciba Specialty Chemicals Co., Ltd.), 2,4,6-tri-C1-2 alkylbenzylidene aryl alkoxyphosphine oxide, 2,4,6-trimethylbenzimidylethoxyethoxyphosphine oxide, bis(2,6-di-C1-2 alkoxyphenyl)-branched C6-12 alkylphosphine oxide , bis(2,6-monomethoxybenzhydryl)_2,4,4-trimethylpentylphosphine oxide (BAPO), bis(2,4,6-tri-C1-2 alkyl benzoyl) Base Cl-6 alkylphosphine oxide, bis(2,4,6-trimethylbenzylidene)methylphosphine oxide, bis(2 4 6 trimethylbenzylidene)ethylphosphine oxide or double (2,4,6-trimethylbenzylidene)_Ν_τ-based phosphine oxide. The above-mentioned tooth methylated ruthenium ruthenium derivative may, for example, be 2—(4-methoxyphenyl)-4,6-bis(trimethylmethyl)_all three tillage, 2—(4-methoxynaphthalene) Base) 46•Bis(trismethyl)--tris-, 2-(4·ethoxynaphthyl)·4 6·bis (tri-methyl)_ 2, or 2-(4-B Oxycarbylnaphthyl)_46·bis (trioxane methyl bromide, etc. as the above-mentioned imadan derivative) may be exemplified by 2_(o-phenyl)-4,5-diphenyl(tetra)dimer, Oxygen stupid base)·4,5•bis(3._methoxyphenyl) mouth rice olfactory dimer, 2-(o-fluorophenyl)-4'5·diphenylimidazole dimer, 2_ (o-methoxyphenyl K5-dipyridyl iodide dimer, or 2-(o-methoxyphenyl)-4,5-diphenylimidazole dimer, etc. As a benzoin alkyl ether, Listed: benzoin musk phenyl ether, benzoin isobutyl ether or benzoin isopropyl ether, etc. As the above derivatives, 2H^, 2_ethyl onion 137746.doc 200937123, 2-tert-butyl fluorene醌 or ι_气蒽醌, etc. As the above benzophenone derivative, there may be mentioned: benzamidine, mazinone, 2-methylbenzophenone 3. Yue Yue Si diphenyl, 4-methyl benzophenone, 2-diphenyl gas Yue-one, 4-bromo-carboxy benzophenone or benzophenone 2_ _ the like.

❹ 作為上述苯乙酮衍生物,可列舉:2,2二甲氧基苯基 苯乙酮、2,2-二乙氧基苯乙酮、丨·羥基環己基苯基酮、^ 羥基-2-甲基苯基丙酮、丨_羥基·丨_甲基乙基(對異丙基苯 基)酮、1-羥基-Μ對十二烷基苯基)_、2_甲基_(4, _($硫 基)苯基)-2-嗎啉基-1-丙明、或丨丨^三氣甲基(對丁基苯 基)酮等。 作為上述9-氧硫p山蠖衍生物,可列舉:9_氧硫吔嗟、2_ 乙基-9-氧硫,山喵、2·異丙基·9_氧硫咄p星、2_氣_9_氧硫 口山蠼、2,4-二曱基-9-氧硫咄ρ星、2,4_二乙基-9_氧硫星或 2,4·一異丙基-9 -氧硫〃山v星等。 作為上述苯甲酸酯衍生物,可列舉:對二甲基胺基苯甲 酸乙酯或對二乙基胺基苯甲酸乙酯等。 作為上述吖啶衍生物,可列舉:9_笨基吖啶或…(對甲氧 基苯基)吖啶等。 作為上述啡畊衍生物,可列舉9,10_二甲基苯并啡畊等。 作為上述二茂鈦衍生物,可列舉:二環戊二烯基二氣化 鈦、二環戊二烯基雙苯基鈦、二環戊二烯基雙(2 3,4 5,6_ 五氟苯-1-基)鈦、二環戊二烯基雙(23,5,6四氟苯基) 欽、二環;^稀基雙(2,4,6-三氣笨小基)欽、三環戊二婦 基-(2,6-二氟苯-1-基)鈦、二環戊二烯基_(24•二氟苯·丨基) 137746.doc -26· 200937123 鈦、二(甲基環戊二烯基)雙(2,3,4,5,6-五氟苯-1-基)鈦、二 (曱基環戊二稀基)雙(2,6-二氟苯-1-基)欽、或二環·戊二埽 基-[2,6-二氟-3-(。比咯-1-基)_苯-1-基]鈦等。 作為上述α-胺烧基笨嗣系化合物,可列舉:2-甲基-1-[4-(甲硫基)苯基]-2-嗎咐·基丙烧-1-酮、2 -苄基-2-二甲基胺基· 1-(4-嗎啉基苯基)-丁酮、2·苄基-2·二甲基胺基_1_(4·嗎 啉基苯基)丁烷-1-酮、4-二甲基胺基乙基苯甲酸酯、4·二 甲基胺基異戊基苯甲酸酯、4-二乙基胺基苯乙酮、4-二甲 基胺基苯丙酮、2-乙基己基_ ι,4-二曱基胺基苯曱酸酯、 2,5-雙(4-二乙基胺基苯亞甲基)環己酮、7二乙基胺基·3_ (4-二乙基胺基苯甲酿基)香豆素、或二乙基胺基)查耳鲷 等。 作為上述肟衍生物類,可列舉:丨,2_辛二酮_1[4(苯硫 基)本基]-2-(〇-本甲酿基將)、或乙酮_ι_[9乙基_6_(2_甲基 苯甲醯基)_9H-咔唑·3·基]_!_(〇_乙醯基肟)等。 當含有光自由基產生劑時,相對於上述矽氧烷聚合物 1〇〇重量份’上述光自由基產生劑之含量較好的是〇丨〜川 重量份之範圍内,更好的是卜15重量份之㈣内。若光自 由基產生劑之量過少,則存在曝光後並未產生充分量之自 由基之情形^光自由基產生劑之量過多,則存在難以均 勻地塗佈抗蝕劑材料、或顯影後產生殘渣之情形。 上述聚合起始劑較好的是藉由外部刺激而產生酸之酸產 生劑。當使用藉由外部刺激而產生酸之酸產生劑時,可藉 由對樹脂組合物賦予外部刺激來使樹脂組合物硬化。 137746.doc -27· 200937123 上述酸產生劑較好的是藉由光之照射而產生酸之光酸產 生劑。含有光酸產生劑之抗蝕劑材料係藉由曝光而感光之 感光性組合物。此時,可藉由對抗蝕劑材料進行曝光而使 矽氧烷聚合物交聯,從而使抗蝕劑材料硬化。又,於基板 上塗佈抗蝕劑材料並局部地曝光、顯影,藉此可形成圖案 . 膜。 . 上述光酸產生劑並無特別限定。作為上述光酸產生劑之 具體例,可列舉:Midori化學公司製造之商品名「TPS-φ 105」(CASNo.66003-78-9)、「TPS-109」(CASNo.l44317-❹ As the above acetophenone derivative, 2,2-dimethoxyphenylacetophenone, 2,2-diethoxyacetophenone, hydrazine hydroxycyclohexyl phenyl ketone, and hydroxy-2 are exemplified. -methylphenylacetone, hydrazine-hydroxy-hydrazine-methylethyl (p-isopropylphenyl) ketone, 1-hydroxy-indole-dodecylphenyl)-, 2-methyl-(4, _($thio)phenyl)-2-morpholinyl-1-propanamine, or trimethylol (p-butylphenyl) ketone, and the like. Examples of the above-mentioned 9-oxothiop-indene derivative include 9-oxythiolane, 2-ethyl-9-oxosulfide, hawthorn, 2·isopropyl-9-oxathiazin p, 2_. Gas _9_ oxysulfonate, 2,4-dimercapto-9-oxothiopurine, 2,4-diethyl-9-oxythione or 2,4·isopropyl-5 - Oxygen sulphur mountain v star. The benzoate derivative may, for example, be p-dimethylaminobenzoic acid ethyl ester or p-diethylaminobenzoic acid ethyl ester. The acridine derivative may, for example, be 9-phenyl acridine or (p-methoxyphenyl) acridine or the like. Examples of the above-mentioned morphing derivative include 9,10-dimethylbenzinodine and the like. Examples of the above titanocene derivative include dicyclopentadienyl titanium dihydride, dicyclopentadienyl bisphenyl titanium, and dicyclopentadienyl bis (2 3,4 5,6-pentafluoro). Benz-1-yl)titanium, dicyclopentadienyl bis(23,5,6 tetrafluorophenyl) chin, bicyclol; ^ dilute bis (2,4,6-trisole) Tricyclopentadienyl-(2,6-difluorophenyl-1-yl)titanium, dicyclopentadienyl-(24•difluorobenzene·fluorenyl) 137746.doc -26· 200937123 Titanium, II ( Methylcyclopentadienyl)bis(2,3,4,5,6-pentafluorophenyl-1-yl)titanium, bis(indenylcyclopentadienyl)bis(2,6-difluorobenzene- 1-based) or dicyclopentadienyl-[2,6-difluoro-3-(.pyrrol-1-yl)-phenyl-1-yl]titanium. Examples of the above α-amine-based alum-based compound include 2-methyl-1-[4-(methylthio)phenyl]-2-indolylpropan-1-one and 2-benzyl. 2--2-dimethylamino 1-(4-morpholinylphenyl)-butanone, 2·benzyl-2·dimethylamino-1-(4·morpholinylphenyl)butane 1-ketone, 4-dimethylaminoethyl benzoate, 4· dimethylaminoisoamyl benzoate, 4-diethylamino acetophenone, 4-dimethyl Aminopropiophenone, 2-ethylhexyl_ι,4-didecylaminobenzoate, 2,5-bis(4-diethylaminobenzylidene)cyclohexanone, 7-diethyl Aminoamino 3-(4-diethylaminobenzyl) coumarin, or diethylamino) chalcedony and the like. Examples of the above anthracene derivatives include anthracene, 2-dioctane-1-[4(phenylthio)carbyl]-2-(anthracene-branched), or ethyl ketone_ι_[9 Base_6_(2_methylbenzhydryl)_9H-carbazole·3·yl]_!_(〇_乙醯基肟) and the like. When the photoradical generator is contained, the content of the above photoradical generator is preferably in the range of 〇丨~chuan by weight relative to 1 part by weight of the above-mentioned siloxane polymer, and more preferably 15 parts by weight of (4). If the amount of the photo radical generating agent is too small, there is a case where a sufficient amount of radicals are not generated after the exposure. If the amount of the photo radical generating agent is too large, it is difficult to apply the resist material uniformly or after development. The situation of the residue. The above polymerization initiator is preferably an acid generator which generates an acid by external stimulation. When an acid generator for generating an acid by external stimulation is used, the resin composition can be hardened by imparting an external stimulus to the resin composition. 137746.doc -27· 200937123 The above acid generator is preferably an acid photoacid generator which is produced by irradiation of light. The resist material containing a photoacid generator is a photosensitive composition which is photosensitive by exposure. At this time, the resist material can be hardened by exposing the resist material to crosslink the siloxane polymer. Further, a resist material is applied onto the substrate and partially exposed and developed, whereby a pattern can be formed. The photoacid generator is not particularly limited. Specific examples of the photoacid generator include the trade name "TPS-φ 105" (CAS No. 66003-78-9) and "TPS-109" (CAS No. l44317-) manufactured by Midori Chemical Co., Ltd.

44-2)、「MDS-105」(CAS No.116808-67-4)、「MDS-205」 (CASN〇.81416-37_7)、「DTS-105」(CASN〇.111281-12-0)、「NDS_105」(CAS No.195057-83-1)及「NDS-165」 (CAS No.316821-98-4)等銕鹽化合物;Midori化學公司製 造之商品名「DPI-105」(CAS No.66003-76-7)、「DPI-106」(CAS No.214534-44-8) 、「DPI-109」(CAS44-2), "MDS-105" (CAS No. 116808-67-4), "MDS-205" (CASN〇.81416-37_7), "DTS-105" (CASN〇.111281-12-0) , "NDS_105" (CAS No. 195057-83-1) and "NDS-165" (CAS No. 316821-98-4) and other sulfonium salt compounds; the brand name "DPI-105" (CAS No) manufactured by Midori Chemical Co., Ltd. .66003-76-7), "DPI-106" (CAS No.214534-44-8), "DPI-109" (CAS

No.194999-82-1)、「DPI-201」(CAS No.6293-66-9)、「BI-105」(CAS No.154557-16-1)、「MPI-105」(CAS No.1 15298-63-0)、「MPI-106」(CAS No.260061-46-9)、No.194999-82-1), "DPI-201" (CAS No. 6293-66-9), "BI-105" (CAS No. 154557-16-1), "MPI-105" (CAS No.) 1 15298-63-0), "MPI-106" (CAS No.260061-46-9),

* 「MPI-109」(CAS No.260061-47-0)、「BBM05」(CAS* "MPI-109" (CAS No.260061-47-0), "BBM05" (CAS

No.84563-54-2)、「BBI-106」(CAS No.185195-30-6)、 「BBI-109」(CAS No.194999-85-4)、「BBI-110」(CAS No.213740-80-8)及「BBI-201」(CAS Ν〇·102342_33·4)等錤 鹽化合物;Midori化學公司製造之商品名「ΝΑΙ· 106」(萘 二甲酿亞胺樟腦磺酸鹽、CAS No.83697-56-7)、「ΝΑΙ- 137746.doc • 28 - 200937123 100」(CASNo.83697-53-4)、「NAI-1002」(CASNo.76656-48-9)、「NAI-1004」(CAS No.83697-60-3)、「NAI-101」 (CAS No.555卜72-4)、「NAI-105」(CAS No.85342-62-7)、 「NAI-109」(CAS No.171417-91-7)、「NI-101」(CAS No.131526-99-3)、「NI-105」(CAS No.85342-63-8)、「NDI-No.84563-54-2), "BBI-106" (CAS No.185195-30-6), "BBI-109" (CAS No.194999-85-4), "BBI-110" (CAS No.) 213740-80-8) and bismuth salt compounds such as "BBI-201" (CAS Ν〇·102342_33·4); the product name "ΝΑΙ·106" manufactured by Midori Chemical Co., Ltd. (naphthalene diimide camphor sulfonate, CAS No. 83697-56-7), "ΝΑΙ- 137746.doc • 28 - 200937123 100" (CAS No. 83697-53-4), "NAI-1002" (CAS No. 76656-48-9), "NAI- 1004" (CAS No. 83697-60-3), "NAI-101" (CAS No. 555 72-4), "NAI-105" (CAS No. 85342-62-7), "NAI-109" (CAS No. 171417-91-7), "NI-101" (CAS No. 131526-99-3), "NI-105" (CAS No. 85342-63-8), "NDI-

* 101」(CAS No.141714-82-1) 、「NDI-105」(CAS • No.133710-62-0)、「NDI-106」(CAS No.210218-57-8)、* 101" (CAS No. 141714-82-1), "NDI-105" (CAS • No.133710-62-0), "NDI-106" (CAS No. 210218-57-8),

「NDI-109」(CAS No.307531-76-6)、「PAI-01」(CAS Φ No.17512-88-8)、「PAI-101」(CAS No.82424-53-1)、「PAI-"NDI-109" (CAS No.307531-76-6), "PAI-01" (CAS Φ No.17512-88-8), "PAI-101" (CAS No.82424-53-1), " PAI-

106」(CAS No.202419-88-3) 、「PAI-1001」(CAS106" (CAS No.202419-88-3), "PAI-1001" (CAS

No.193222-02-5)、「SI-101」(CAS Ν〇·55048·39-0)、「SI_ 105」(CASN〇.34684_40-7)、「SI-106」(CASN〇.179419-32-0)、「SI-109」(CAS No.252937-66-9)、「PI_105」(CAS No.41580-58-9)及「PI-106」(CAS No.83697-51-2),汽巴 精化公司製造之商品名「CGI1397」、「CGI1325」、 「CGI1380」、「CGI1311」、「CGI263」及「CGI268」等磺 酸酯系化合物;Midori化學公司製造之商品名「DTS200」 (CAS No.203573-06-2)、以及Rhodia Japan公司製造之商品 名「RHODORSIL PHOTOINITIATOR-2074 」(CAS No.178233-72-2)等以BF4-作為反離子之化合物等。光酸產 生劑可僅使用一種,亦可併用兩種以上。 當含有上述光酸產生劑時,相對於矽氧烷聚合物1〇〇重 量份,光酸產生劑之含量較好的是0.1〜1〇〇重量份之範圍 内。若光酸產生劑之量過少,則存在曝光後抗蝕劑材料並 137746.doc -29- 200937123 未充分地感光之情形。若光酸產生劑之量過多,則存在難 以均勻地塗佈抗蝕劑材料、或顯影後產生殘渣之情形。 當使用上述光自由基產生劑時,抗蝕劑材料較好的是不 含光酸產生劑。此時,所形成之抗蝕膜中不會殘留酸及 鹼。因此,即便金屬接觸抗蝕膜,亦可抑制金屬之遷移。 除了光聚合起始劑之外’抗蝕劑材料中亦可進而添加敏 化劑。當使用敏化劑時’可進一步提高抗蝕劑材料之靈敏 ❹ 9 度。上述敏化劑並無特別限^。作為上述敏化劑之具體 例,可列舉:二苯甲嗣、p,p,_四甲基二胺基二苯甲嗣、 p,p’-四乙基胺基二苯曱_、2•氣·9.氧硫_、蒽酮、9_乙 氧基蒽、蒽'、芘、茈、啡噻畊、苯偶醯 素、硫代黃素一二苯基葱、"綱、苯:二 “肖基第、5_硝基危、笨酿、2K硝基笨胺、沁乙酿基_ 對硝基苯胺、對硝基苯胺、N•乙酿基_4•硝基]•萘基胺、 2从三硝基苯基胺、葱酿、2_乙基葱酿、2_第三丁基葱 酿、1,2_苯并葱醒、3_甲基_u·二氣-】,笨并葱酮、二苯 亞曱基丙綱、12 -華酿、q V银1 ^ 一去… 魏3,3_縣_雙(5,7·^氧基羰基香 •2·素)或蔻等。 (可添加之其他成分) 本發明之抗蝕劑材料亦可含有溶劑。當含有溶 餘劑材料之塗佈變容易。 ^ ::為上述溶劑,可列舉:芳香族烴化合物、飽和或不飽 和1化合物、醚類、嗣類、酯 一 一種,亦可併用兩種以上。 4溶劑可僅使用 137746.doc • 30- 200937123 作為上述芳香族烴化合物,例如可列舉:笨、二甲苯、 甲苯、乙基苯、苯乙烯、三甲基苯或二乙基苯等。 作為上述飽和或者不飽和烴化合物,可列舉:環己院、 環己婦、二戍稀、正戊烧、異戊燒、正己燒、異己烧、正 庚貌、異庚院、正辛院、異辛烧、正壬貌、異壬烧、正癸 烷、異癸烷、四氫呋南、四氫萘或角笑烷等。 參 ❹ 作為上述謎類,可列舉:二乙喊、二正丙喊、二異丙 醚:二頂、乙丙喊、二苯越、二乙二醇二甲醚、二乙二 醇一乙醚、二乙二醇二丁醚、二乙二醇甲乙醚、二丙二醇 二甲醚、二丙二醇二乙醚、二丙二醇二丁醚、二丙二醇甲 ^喊、乙二醇二甲喊、乙二醇二乙鍵、乙二醇二丙喊、乙 匕醇甲乙醚、四氫呋喃、二啰烷、丙二醇單甲醚乙酸 酯1乙二醇單乙醚乙酸酯、二丙二醇曱醚乙酸酯、二乙二 β單醚乙酸知、乙基環己烷、曱基環己烷、對薄荷烷、 鄰薄荷烷、間薄荷烷、二丙醚或二丁醚等。 作為上述_類’可列舉:丙網、甲基乙基酮、甲基異丁 基網、二乙基_、二丙基嗣、甲基戊基綱、環戊嗣環己 酮或環丁酮等。 酽:述知類,可列舉:乙酸乙酯、乙酸甲酯、乙酸丁 ^ 酸丙知、乙酸環己酯、乙酸曱基溶纖劑、乙酸乙基 ,纖劑、乙酸丁基溶纖劑、乳酸乙酯、乳酸丙醋、乳酸丁 知、乳酸異戊酯、或硬脂酸丁醋等。 作為上述醇類,可列舉:戊醇、烯内醇、異戊醇、異丁 異丙醇、十-醇、乙醇、2_乙基丁醇、2-乙基己醇、 137746.doc •31 - 200937123 2- 辛醇、正辛醇、縮水 ς踣 ^ 甘油環己醇、3,5-二甲基-1·己炔_ 3 -醇、正癸醇、四|嫌龄 ^ 糖醇、…松油醇 '新戊醇、壬醇、雜 醇油、丁醇、糠醇、块丙醇、雜 ,,^ J ^ 匕醇、庚醇、苄醇、 戊醇、曱醇、曱基環 砰z T暴-1-丁醇、3_甲基_2_ 醇' 3-甲基-1· 丁炔·3_醇 、j醇、4-甲基-2-戊醇或3_甲基戍 3- 醇等。 X狀 例如’以於基板上均勻地塗佈抗餘劑材料之方式來適當 ❹No.193222-02-5), "SI-101" (CAS 550·55048·39-0), "SI_105" (CASN〇.34684_40-7), "SI-106" (CASN〇.179419- 32-0), "SI-109" (CAS No. 252937-66-9), "PI_105" (CAS No. 41580-58-9) and "PI-106" (CAS No. 83697-51-2) , sulfonate-based compounds such as "CGI1397", "CGI1325", "CGI1380", "CGI1311", "CGI263" and "CGI268" manufactured by Ciba Specialty Chemicals; the product name "DTS200" manufactured by Midori Chemical Co., Ltd. (CAS No. 203573-06-2), and the product name "RHODORSIL PHOTOINITIATOR-2074" (CAS No. 178233-72-2) manufactured by Rhodia Japan Co., Ltd., etc., BF4- as a counter ion compound. The photoacid generator may be used singly or in combination of two or more. When the photoacid generator is contained, the photoacid generator is preferably contained in an amount of from 0.1 to 1 part by weight based on 1 part by weight of the alkoxysilane polymer. If the amount of the photoacid generator is too small, there is a case where the resist material after exposure is not sufficiently sensitized by 137746.doc -29-200937123. If the amount of the photoacid generator is too large, it may be difficult to apply the resist material uniformly or to generate a residue after development. When the above photoradical generator is used, the resist material preferably contains no photoacid generator. At this time, acid and alkali are not left in the formed resist film. Therefore, even if the metal contacts the resist film, migration of the metal can be suppressed. In addition to the photopolymerization initiator, a sensitizer may be further added to the resist material. When the sensitizer is used, the sensitivity of the resist material can be further improved by 9 degrees. The above sensitizer is not particularly limited. Specific examples of the sensitizer include: benzamidine, p, p, _ tetramethyldiaminobenzhydrazide, p, p'-tetraethylaminodiphenyl hydrazine _, 2 • Gas · 9. Oxygen sulfur _, fluorenone, 9 ethoxy hydrazine, 蒽 ', 芘, 茈, thiophene, benzoin, thioflavin-diphenyl onion, " 2 "Xiao Jidi, 5 nitro-nuclear, stupid, 2K nitro-l-amine, 沁乙-based _ p-nitroaniline, p-nitroaniline, N• ethyl ketone _4 • nitro] • naphthyl Amine, 2 from trinitrophenylamine, onion, 2_ethyl onion, 2_t-butyl onion, 1,2-benzoindole, 3_methyl_u·digas-] , stupid and onion ketone, diphenyl fluorenyl propyl, 12 - eucalyptus, q V silver 1 ^ one go... Wei 3, 3_ county _ double (5,7 · oxycarbonyl scent • 2 · vegetarian) Or other components. (Other components that can be added) The resist material of the present invention may contain a solvent. The coating of the material containing the resolving agent becomes easy. ^: For the above solvent, an aromatic hydrocarbon compound, A saturated or unsaturated compound, an ether, an anthracene or an ester may be used in combination of two or more. 4 Solvents may be used only 137746.doc 30-200937123 The aromatic hydrocarbon compound may, for example, be stupid, xylene, toluene, ethylbenzene, styrene, trimethylbenzene or diethylbenzene. Examples of the saturated or unsaturated hydrocarbon compound include :Huanjiyuan, Huanji, Erqi, Zhengba, Isabi, Zhengji, Alien, Zhenggeng, Yigengyuan, Zhengxinyuan, Qixin, Zhengyi, Yiqi , n-decane, isodecane, tetrahydrofuran, tetrahydronaphthalene or ergophane, etc. As the above mystery, it can be exemplified: Eryi shout, di-n-propyl shim, diisopropyl ether: two top, Ethylpropionate, diphenyl, diethylene glycol dimethyl ether, diethylene glycol monoethyl ether, diethylene glycol dibutyl ether, diethylene glycol methyl ether, dipropylene glycol dimethyl ether, dipropylene glycol diethyl ether, two Propylene glycol dibutyl ether, dipropylene glycol methyl sulfonate, ethylene glycol dimethyl sulfonate, ethylene glycol diethyl bond, ethylene glycol dipropylene, ethylene glycol methyl ether, tetrahydrofuran, dioxane, propylene glycol monomethyl ether acetate Ester 1 ethylene glycol monoethyl ether acetate, dipropylene glycol oxime ether acetate, diethylene glycol monoether acetic acid, ethyl cyclohexane曱-cyclohexane, p-menthane, o-menthane, m-menthane, dipropyl ether or dibutyl ether, etc. As the above-mentioned class, a propylene net, a methyl ethyl ketone, a methyl isobutyl network may be mentioned. , diethyl _, dipropyl hydrazine, methyl amyl group, cyclopentanyl cyclohexanone or cyclobutanone, etc. 酽: description of the class, can be cited: ethyl acetate, methyl acetate, butyl acetate Known, cyclohexyl acetate, strontium acetate cellosolve, ethyl acetate, fiber, butyl cellosolve, ethyl lactate, lactic acid, lactic acid, butyl lactate, isoamyl lactate, or succinate Examples of the above alcohols include pentanol, ene alcohol, isoamyl alcohol, isobutyl isopropanol, deca-ol, ethanol, 2-ethylbutanol, 2-ethylhexanol, 137746.doc • 31 - 200937123 2- Octanol, n-octanol, shrinkage ς踣 glycerol cyclohexanol, 3,5-dimethyl-1·hexyne -3-ol, n-nonanol, tetra|sugar age, sugar alcohol, ... terpineol 'ne pentanol, sterol, fusel oil, butanol, decyl alcohol, l-propyl alcohol, miscellaneous, ^ J ^ sterol, heptanol, benzyl alcohol, pentanol, decyl alcohol, fluorenyl fluorene z T violence 1-butanol, 3-methyl-2_ol' 3 -Methyl-1·butyne·3_ol, j alcohol, 4-methyl-2-pentanol or 3-methylindole-3-ol. X-shaped, for example, is suitable for uniformly coating the anti-reagent material on the substrate.

地設定上述溶劑之含量1劑較好的是以抗㈣材料之固 形物濃度達到10〜90重量%之範圍内的方式來含有更好 的疋以固形物濃度達到3〇〜85重量%之範圍内的方式來含 有。 為了使環狀醚基與酸酐基或羧基之反應容易地進行本 發明之抗蝕劑材料中亦可含有硬化促進劑。 於本發明之抗蝕劑材料中,視需要亦可進而添加其他添 加劑。作為添加劑,可列舉:染料、勻化劑、消泡劑抗 靜電劑、紫外線吸收劑、pH調節劑、分散劑、分散助劑、 表面改質劑、塑化劑、塑化促進劑、抗下垂劑、抗氧化劑 或密著助劑等。 (LED元件) 本發明之抗蝕劑材料適合用於形成發出波長為8〇〇 nm以 下之光之LED元件的抗银膜。即’本發明之抗钱劑材料可 適用作LED元件之抗蝕膜形成用抗蝕劑材料。本發明之抗 蝕劑材料可更好地用作形成LED元件之防焊膜所使用的防 焊材料。 137746.doc -32- 200937123 圖1係示意性表示具備使用本發明之實施形態之抗蝕劑 材料而形成的抗姓膜之LED元件的部分切缺正面剖面圖。 圖1所示之LED元件1中,於基板2之上表面2a上,積層 有利用上述抗蝕劑材料所形成之抗蝕膜3。抗蝕膜3係圖案 膜。由此,於基板2之上表面2a上之部分區域上並不存在 • 抗蝕膜3。於不存在抗蝕膜3之區域中,在基板2之上表面 * 2a上設置有電極4a、4b。 本實施形態之抗蝕劑材料含有光聚合起始劑。因此,可 ® 藉由後述曝光步驟及顯影步驟而形成作為上述圖案膜之抗 蝕膜3。LED元件1具有基板2、及抗蝕膜3,該抗蝕膜3積 層於基板2之表面上、且係藉由上述抗姓劑材料而形成。 基板2係玻璃環氧積層板。作為玻璃環氧積層板之具體 例’可列舉FR-4或FR-5等。亦可使用具備鋁板及積層於該 銘板上之散熱板的積層板’來代替玻璃環氧積層板。又, 如圖2所示’亦可使用單層之樹脂板21來代替玻璃環氧積 0 層板。又,亦可使用積層有複數片樹脂板之積層板。 於抗蝕膜3之上表面3a上積層有LED晶片7 ^介隔抗蝕膜 3而於基板2上積層LED晶片7。於LED晶片7之下表面7a之 外周緣附近’設置有端子8a、8b。端子8a、8b係藉由焊錫 9a、9b而分別與設置於基板2之上表面2a上的電極4a、4b 電性連接。可藉由該電性連接而向LED晶片7供給電力。 端子8a、8b之下表面之部分區域位於不存在抗蝕膜3之 區域中。因此,端子8a、8b之部分下表面不與抗蝕臈3接 觸。於不與抗蝕膜3接觸之部分’藉由焊錫9a將電極8&與 137746.doc -33- 200937123 電極4a連接。又,於不與抗蝕膜3接觸之部分,藉由焊錫 9b將端子8b與電極4b連接。亦可利用金或銀等其他金屬來 代替焊錫9a、9b,將端子8a、8b與電極4a、4b分別連接》 又,亦可藉由接線來將端子8a、8b與電極4a、4b分別連 接。 本實施形態中,抗蝕臈3為白色。又,進行焊接等時, 抗蝕膜3即便暴露於高溫下亦不易自白色發生變色。如圖i 之箭頭所示,自LED晶片7發出光。特別係如箭頭a所示, 可藉由抗蝕膜3而有效地反射到達抗蝕膜3側之光。因此, LED元件1中可有效地利用LED晶片7之發光。 (LED元件之製造方法) 獲侍LED元件1時,首先例如,如圖3(a)所示,於基板2 上形成特定厚度之抗姓劑材料層U。 作為形成上述抗蝕劑材料層u之方法,例如可列舉於基 板2上塗佈抗蝕劑材料之方法。作為於基板2上塗佈抗蝕劑 材料之方法,可使用通常之塗佈方法。例如:可藉由簾幕 塗佈、網版印刷、浸潰塗佈、輥塗佈、棒塗佈、毛刷塗 佈、喷塗、旋塗、擠壓塗佈或凹版印刷塗佈等方法來塗佈 抗蝕劑材料。抗蝕劑材料層Π之厚度為10 nm〜50 μίη& 右。 备抗蝕劑材料層11含有溶劑時,為了去除溶劑,較理想 的是於曝光之前對抗蝕劑材料層η進行熱處理。曝光前之 熱處理溫度通常在40〜20(rc之範圍内。曝光前之熱處理溫 度"T根據溶劑之沸點及蒸氣壓來適當地選擇。 137746.doc •34· 200937123 其次,如圖3(b)所示’使用遮罩12對抗蝕劑材料層11進 行局部曝光時,遮罩12具有開口部12a及遮光部12b。藉由 使用遮罩12 ’而以抗餘劑材料層11具有經光照射之曝光部 11a及未經光照射之未曝光部lib的方式進行局部曝光。此 處,基板2上之形成有電極4a、4b之部分上所形成的抗蝕 " 劑材料層Η為未曝光部lib。由此,基板2上之未形成有電 極4a、4b之部分上所形成的抗蝕劑材料層η為曝光部 11 a 〇 Ο 作為遮罩12,可使用市售之通常之遮罩。 經光照射之曝光部lla之抗蝕劑材料層11中,由光酸產 生劑或光自由基產生劑產生酸或自由基。未經光照射之未 曝光部lib之抗蝕劑材料層11中,光酸產生劑或光自由基 產生劑不產生酸或自由基。 曝光部lla之抗蝕劑材料層11中,利用由光酸產生劑或 光自由基產生劑所產生之酸或自由基的作用,而使上述石夕 $ 氧烧聚合物交聯。若上述石夕氧烧聚合物交聯,則曝光部 11 a之抗蝕劑材料層11硬化。結果,曝光部u a之抗蝕劑材 料層11不溶於顯影液中。未曝光部lib之抗蝕劑材料層“ 並未感光。因此’未曝光部lib之抗钱劑材料層11並未硬 化,可溶於顯影液中》 進行曝光時’用以照射紫外線或可見光線等活性能量線 之光源並無特別限定。作為上述光源,可使用:超高壓水 銀燈、Deep UV(Deep ultraviolet,深紫外光)燈、高壓水銀 燈、低壓水銀燈、金屬鹵素燈或準分子雷射等。該等光源 137746.doc •35· 200937123 可根據抗蝕劑材料之構成成分之感光波長來適當地選擇。 光之照射能量可根$所需膜厚或抗蝕劑材料之構成成分來 適备地選擇。光之照射能量通常在1〇〜3〇〇〇 mj/cm2之範圍 内。若光之照射能量未滿1 〇 mj/cm2,則存在曝光部1丨&之 抗蝕劑材料層11並未充分地硬化之情形《若光之照射能量 超過3000 mj/cm2,則存在曝光時間過長之情形,可能圖 案膜之單位時間之製造效率下降。 其次,利用顯影液而使抗蝕劑材料層u顯影。若利用顯 影液來進行顯影,則未曝光部lib之抗蝕劑材料層u由於 溶解於顯影液中而被去除。結果,如囷3(c)所示,可獲得 作為圖案膜之抗蝕膜3。該圖案因未曝光部llb之抗蝕劑材 料層11被去除故被稱作負型圖案β 顯影之操作包括利用鹼性水溶液等顯影液來處理抗蝕劑 材料層11之各種操作。作為顯影之操作,可列舉:將抗蝕 劑材料層U浸漬於顯影液中之操作、利用顯影液來沖洗抗 蝕劑材料層U之表面之操作、或對抗蝕劑材料層u之表面 喷射顯影液之操作等。 再者,所謂顯影液,係、指對抗_材料層u進行局部曝 光之後將未曝光部llb之抗姓劑材料心溶解之液體。曝 光部⑴之抗㈣材料層u硬化,故不溶解於顯影液中。 顯影液並不限定於驗性水溶液。亦可使用溶劑來作為顯影 液。作為溶劑,可列舉上述各種溶劑。 可適當地使歸性水溶液來作為㈣液。當使用檢性水 溶液時’可無需防爆設備,且可減輕腐餘等所造成之設備 I37746.doc -36- 200937123 負擔。 作為上述驗性水溶液,例如可列舉:氫氧化四甲基錢水 溶T、石夕酸納水溶液、氫氧化納水溶液、氫氧化卸水溶液 或碳酸納水溶液等。顯影時間可根據抗㈣材料層^之厚 度或溶劑種類而適當地設定。為了可高效率地顯影、且可 s高製造效率’顯影時間較好的是在】秒〜1〇分鐘之範圍 • N。顯影之後,較好的是利用蒸顧水來清洗圖案膜3,從 而去除圖案膜3上殘留之驗性水溶液等顯影液。 ® 繼而,如圖3(d)所示,於抗蝕膜3上積層下表面7a上設置 有端子8a、8b的LED晶片7。其後,利用焊錫9a、9b,將 設置於LED晶片7之下表面7a上之端子8a、8b與設置於基 板2之上表面2a的未形成抗蝕膜3之部分上的電極扑、扑電 性連接。如此,可獲得圖1所示之LED元件1。 再者,當抗蝕劑材料含有上述光酸產生劑或上述光自由 基產生劑時,亦可不於基板2上之整個表面而僅於特定部 分上形成抗姓劑材料層。亦可對形成於特定部分上之抗蚀 劑材料層的整個表面進行曝光。 以下,列舉本發明之具體實施例及比較例,藉此來明示 本發明。本發明並不限定於以下實施例。 (實施例1) (1)烷氧基矽烷縮合物之製備 於附有冷凝管之100 ml燒瓶中’加入7 g苯基三乙氧基矽 烷、47 g曱基三乙氧基矽烷、〇·2 g草酸、15 ml水及14 ml 丙二醇單甲醚乙酸酯。使用半圓型之機械攪拌器來攪拌溶 137746.doc -37- 200937123 液,並使用加熱套於7(rc下使上述溶液反應6個小時。其 次,使用蒸發器,將與水之縮合反應所生成之乙醇及殘留 水去除。其後,放置燒瓶直至達到室溫為止,獲得固形物 濃度為70重量%之含有烷氧基矽烷縮合物之溶液。 使用凝膠滲透層析儀對所得烷氧基矽烷縮合物進行測 疋’所得之聚苯乙烯換算重量平均分子量Mw為3500。藉 此,確認獲得了烷氧基矽烷縮合物。 (2)作為樹脂組合物之抗蚀劑材料之製備 調配10重量份之含有作為矽氧烷聚合物的烷氧基矽烷縮 合物之溶液(固形物濃度為70重量%)、0.7重量份之作為聚 合起始劑之光酸產生劑(Midori化學公司製造、型號:PAI-101)、10重量份之作為白色填料之二氧化鈦(石原產業公司 製造、型號:CR-50)、以及0.14重量份之作為敏化劑之二 丁氧基蒽(川崎化成公司製造),利用攪拌機混合2分鐘之 後,用三輥研磨機進行混合。其後,使用混合機(Thinky 公司製造’脫泡攪拌太郎SP-500)對混合物進行3分鐘消 泡,藉此獲得抗蝕劑材料。 (比較例1) (1) 清漆A之製造 調配40重量份之丙烯酸胺基曱酸酯(XP-4000B)、40重量 份之環氧丙烯酸酯(SUMIFLASH A)、及3重量份之鋁整合 物(ALCH),於常壓下於13(TC下對該調配物進行120分鐘 之攪拌並進行加熱,藉此製造清漆A。 (2) 防焊油墨之製造 I37746.doc -38 - 200937123 調配20重量份之聚丁二烯丙烯酸酯(R_45ACR)、1〇重量 份之環氧丙烯酸酯(SP-1509)、30重量份之硫酸鋇、15重量 份之季戊四醇四丙烯酸酯、20重量份之聚乙二醇二丙稀酸 酯、4重量份之凝膠清漆、丨重量份之酞菁綠、4重量份之 2-乙基蒽醌、50重量份之上述(1)中所得之清漆A、及1重 量份之界面活性劑,利用常用方法藉由三輥研磨機來混合 • 該調配物,使其均勻地分散,藉此製造作為抗蝕劑材料之 防焊油墨。 β (評價) (1)抗蝕膜之製作 藉由網版印刷法,將所得抗蝕劑材料以厚度達到3〇 之方式塗佈於由玻璃形成之基板上。網版印刷係於如下各 條件下進行的,即,刮漿板速度:25〇 mm/秒、刮漿板壓 力· 0.17 MPa、刮刀壓力:〇17 MPa、背壓:〇.1〇 MPa、 刮刀速度:50 mm/秒、以及間隙:1 7 mm。 塗佈後,使抗蝕劑材料於8〇t之烘箱中乾燥20分鐘,從 而於基板上形成抗蝕劑材料層。其次,經由具有特定圖案 之光罩,使用紫外線照射裝置’以使照射能量達到5〇〇 mJ/cm2之方式,以100mW/cm2之紫外線照度對抗蝕劑材料 層照射5秒鐘之波長為365 nmi紫外線。照射紫外線之 後,實施例1係藉由l〇〇°C之加熱板對抗蝕劑材料層進行2 分鐘之加熱。其後,當使用實施例丨之抗蝕劑材料時,將 抗蝕劑材料層浸潰於氫氧化四甲基銨之2 38%水溶液中而 進行顯影,當使用比較例丨之抗蝕劑材料時,將抗蝕劑材 137746.doc -39· 200937123 料層浸潰於碳酸鈉之1 〇/。水溶液中而進行顯影,去除未曝 光部之抗#劑材料層,藉此於基板上形成抗蝕膜。 (2)抗蝕膜之耐熱性試驗 將所得抗蝕膜於27(TC下放置2分鐘,獲得評價樣品。 又’亦準備將所得抗蝕膜於288°C下放置2分鐘所得之評價 樣品。 - 針對剛形成之抗蝕膜(初期)、270°C下放置2分鐘後之抗 蝕膜(27(TC、2分鐘)、及288。(:下放置2分鐘後之抗蝕膜 ® (288°C、2分鐘)’使用色彩·色差計(K〇nica Minolta公司製 造、CR-400)來進行比色。分別獲得由JIS Z8701所規定之 XYZ表色系統(CIE 1931)的顏色表示方法所得之γ、又及乂之 值。再者,色度座標(X、y)表示色調及色彩度,三刺激值 Y表示反射率及亮度。 比色結果示於下述表1。又,圖4表示於χγζ表色系統之 色度圖中繪出耐熱性試驗前後之實施例及比較例的抗蝕膜 之色度座標(X、y)的圖。又,圖5示意性地表示ΧΥΖ表色系 統之色度圖。 137746.doc -40- 200937123 [表l] 實施例1 比較例1 初期 Y 89.51 80.24 X 0.3118 0.3132 y 0.3298 0.3332 270°C、2分鐘 Y 88.78 76.98 X 0.3130 0.3182 y 0.3318 0.3395 ΔΥ -0.73 -3.26 △X 0.0012 0.0050 △y 0.0020 0.0063 288°C、2分鐘 Υ 88.31 77.25 X 0.3121 0.3237 y 0.3308 0.3450 ΔΥ -1.2 -2.99 △X 0.0003 0.0105 △y 0.0010 0.0118It is preferable to set the content of the above solvent to a range in which the solid content of the anti-(four) material is in the range of 10 to 90% by weight, and the solid content is preferably in the range of 3 to 85% by weight. Inside the way to contain. The resist material of the present invention may be easily contained in the resist material in order to easily react the cyclic ether group with the acid anhydride group or the carboxyl group. In the resist material of the present invention, other additives may be further added as needed. Examples of the additives include dyes, leveling agents, antifoaming agents, antistatic agents, ultraviolet absorbers, pH adjusters, dispersants, dispersing aids, surface modifiers, plasticizers, plasticizing accelerators, and sagging resistance. Agent, antioxidant or adhesion aid. (LED Element) The resist material of the present invention is suitably used for forming an anti-silver film of an LED element emitting light having a wavelength of 8 Å or less. Namely, the anti-money agent material of the present invention can be suitably used as a resist material for forming a resist film for an LED element. The resist material of the present invention can be better used as a solder resist material for forming a solder resist film of an LED element. 137746.doc -32- 200937123 Fig. 1 is a partially cutaway front cross-sectional view schematically showing an LED element having an anti-surname film formed using a resist material according to an embodiment of the present invention. In the LED element 1 shown in Fig. 1, a resist film 3 formed of the above resist material is laminated on the upper surface 2a of the substrate 2. The resist film 3 is a pattern film. Thereby, the resist film 3 does not exist on a partial region on the upper surface 2a of the substrate 2. In the region where the resist film 3 is not present, the electrodes 4a, 4b are provided on the upper surface * 2a of the substrate 2. The resist material of this embodiment contains a photopolymerization initiator. Therefore, the resist film 3 as the pattern film can be formed by an exposure step and a development step which will be described later. The LED element 1 has a substrate 2 and a resist film 3 which are laminated on the surface of the substrate 2 and formed by the above-mentioned anti-surname material. The substrate 2 is a glass epoxy laminate. Specific examples of the glass epoxy laminate are FR-4 or FR-5. Instead of the glass epoxy laminate, a laminate plate having an aluminum plate and a heat dissipation plate laminated on the name plate may be used. Further, as shown in Fig. 2, a single-layer resin sheet 21 may be used instead of the glass epoxy laminate. Further, a laminate in which a plurality of resin sheets are laminated may be used. An LED chip 7 is laminated on the upper surface 3a of the resist film 3, and the resist film 3 is interposed, and the LED wafer 7 is laminated on the substrate 2. Terminals 8a, 8b are provided in the vicinity of the outer periphery of the lower surface 7a of the LED wafer 7. The terminals 8a and 8b are electrically connected to the electrodes 4a and 4b provided on the upper surface 2a of the substrate 2 by solders 9a and 9b, respectively. Electric power can be supplied to the LED chip 7 by the electrical connection. A partial region of the lower surface of the terminals 8a, 8b is located in a region where the resist film 3 is not present. Therefore, part of the lower surface of the terminals 8a, 8b is not in contact with the resist 3 . The electrode 8& is connected to the 137746.doc-33-200937123 electrode 4a by solder 9a at a portion not in contact with the resist film 3. Further, the terminal 8b is connected to the electrode 4b by the solder 9b at a portion not in contact with the resist film 3. Other metals such as gold or silver may be used instead of the solders 9a and 9b, and the terminals 8a and 8b may be connected to the electrodes 4a and 4b, respectively. Alternatively, the terminals 8a and 8b may be connected to the electrodes 4a and 4b by wiring. In the present embodiment, the anti-corrosion crucible 3 is white. Further, when soldering or the like is performed, the resist film 3 is less likely to be discolored from white even when exposed to a high temperature. Light is emitted from the LED wafer 7 as indicated by the arrow of FIG. In particular, as indicated by an arrow a, light reaching the resist film 3 side can be efficiently reflected by the resist film 3. Therefore, the light emission of the LED chip 7 can be effectively utilized in the LED element 1. (Manufacturing Method of LED Element) When the LED element 1 is served, first, for example, as shown in FIG. 3(a), an anti-surname material layer U having a specific thickness is formed on the substrate 2. As a method of forming the above-described resist material layer u, for example, a method of applying a resist material on the substrate 2 can be mentioned. As a method of applying a resist material on the substrate 2, a usual coating method can be used. For example, it can be applied by curtain coating, screen printing, dip coating, roll coating, bar coating, brush coating, spray coating, spin coating, extrusion coating or gravure coating. A resist material is applied. The thickness of the resist material layer is 10 nm to 50 μίη & right. When the resist material layer 11 contains a solvent, in order to remove the solvent, it is preferred to heat-treat the resist material layer η before exposure. The heat treatment temperature before exposure is usually in the range of 40 to 20 (rc. The heat treatment temperature before exposure "T is appropriately selected depending on the boiling point of the solvent and the vapor pressure. 137746.doc •34· 200937123 Next, as shown in Fig. 3(b) When the partial exposure of the resist material layer 11 is performed using the mask 12, the mask 12 has an opening portion 12a and a light blocking portion 12b. The resist material layer 11 is irradiated with light by using the mask 12'. The exposure portion 11a and the unexposed portion lib which is not irradiated with light are partially exposed. Here, the resist material layer formed on the portion of the substrate 2 on which the electrodes 4a and 4b are formed is unexposed. The portion lib of the resist material formed on the portion of the substrate 2 on which the electrodes 4a and 4b are not formed is the exposed portion 11 a 〇Ο as the mask 12, and a commercially available conventional mask can be used. In the resist material layer 11 of the exposed portion 11a which is irradiated with light, an acid or a radical is generated by a photoacid generator or a photo radical generating agent. The resist material layer 11 of the unexposed portion lib which is not irradiated with light Medium photoacid generator or photoradical generator does not produce acid or free In the resist material layer 11 of the exposure portion 11a, the above-mentioned oxy-fired polymer is crosslinked by the action of an acid or a radical generated by a photoacid generator or a photoradical generator. When the above-mentioned stone oxide polymer is crosslinked, the resist material layer 11 of the exposed portion 11a is hardened. As a result, the resist material layer 11 of the exposed portion ua is insoluble in the developer. The resist of the unexposed portion lib The material layer "is not sensitized. Therefore, the layer 11 of the anti-money material of the unexposed portion lib is not hardened and is soluble in the developer". When exposed, the light source for illuminating the active energy rays such as ultraviolet rays or visible rays is not Particularly limited. As the above light source, an ultrahigh pressure mercury lamp, a Deep UV (deep ultraviolet) lamp, a high pressure mercury lamp, a low pressure mercury lamp, a metal halide lamp or an excimer laser can be used. The light sources 137746.doc • 35 · 200937123 can be appropriately selected according to the photosensitive wavelength of the constituent components of the resist material. The irradiation energy of light can be appropriately selected by the required film thickness or the composition of the resist material. The irradiation energy of light is usually In the range of 1 〇 to 3 〇〇〇 mj/cm 2 , if the irradiation energy of light is less than 1 〇 mj/cm 2 , there is a case where the resist material layer 11 of the exposed portion 1 丨 & If the irradiation energy of light exceeds 3000 mj/cm2, the exposure time may be too long, and the manufacturing efficiency per unit time of the pattern film may be lowered. Next, the resist material layer u is developed by the developer. When development is performed, the resist material layer u of the unexposed portion lib is removed by being dissolved in the developer. As a result, as shown by 囷3(c), the resist film 3 as a pattern film can be obtained. This pattern is referred to as a negative pattern β because the resist material layer 11 of the unexposed portion 11b is removed. The operation of developing the resist material layer 11 by using a developing solution such as an alkaline aqueous solution. Examples of the operation for developing include an operation of immersing the resist material layer U in the developer, an operation of rinsing the surface of the resist material layer U with the developer, or spraying and developing the surface of the resist material layer u. Liquid operation, etc. Further, the developer is a liquid which dissolves the anti-surname material core of the unexposed portion 11b after partial exposure to the material layer u. The material layer u of the exposed portion (1) is hardened, so it is not dissolved in the developer. The developer is not limited to the aqueous solution. A solvent can also be used as the developing solution. Examples of the solvent include the above various solvents. The aqueous solution of the solution can be suitably used as the (four) liquid. When using an aqueous solution, it is not necessary to use explosion-proof equipment, and it can reduce the burden of equipment caused by corrosion, etc. I37746.doc -36- 200937123. The above-mentioned aqueous test solution may, for example, be a tetramethylammonium hydroxide solution, an aqueous solution of a solution of sodium arsenoate, an aqueous solution of sodium hydroxide, an aqueous solution of aqueous hydroxide or an aqueous solution of sodium carbonate. The development time can be appropriately set depending on the thickness of the anti-(4) material layer or the kind of the solvent. In order to be able to develop efficiently, and to achieve high manufacturing efficiency, the development time is preferably in the range of seconds to 1 minute. After the development, it is preferred to wash the pattern film 3 by steaming water, thereby removing the developer such as an aqueous solution remaining on the pattern film 3. Then, as shown in Fig. 3(d), the LED chips 7 on which the terminals 8a and 8b are provided on the lower surface 7a of the resist film 3 are laminated. Thereafter, the electrodes 8a, 8b provided on the lower surface 7a of the LED chip 7 and the electrodes provided on the upper surface 2a of the substrate 2 on the portion where the resist film 3 is not formed are irradiated by the solders 9a, 9b. Sexual connection. Thus, the LED element 1 shown in Fig. 1 can be obtained. Further, when the resist material contains the photoacid generator or the photoradical generator, the anti-surname material layer may be formed only on a specific portion without the entire surface of the substrate 2. It is also possible to expose the entire surface of the resist material layer formed on a specific portion. Hereinafter, the present invention will be exemplified by exemplifying specific examples and comparative examples of the present invention. The invention is not limited to the following examples. (Example 1) (1) Preparation of alkoxydecane condensate In a 100 ml flask equipped with a condenser, '7 g of phenyltriethoxydecane, 47 g of decyltriethoxydecane, 〇· 2 g of oxalic acid, 15 ml of water and 14 ml of propylene glycol monomethyl ether acetate. The semi-circular mechanical stirrer was used to stir the solution of 137746.doc -37- 200937123, and the solution was reacted for 7 hours using a heating mantle at 7 (rc). Secondly, an evaporator was used to generate a condensation reaction with water. The ethanol and residual water were removed. Thereafter, the flask was placed until room temperature was reached, and a solution containing an alkoxydecane condensate having a solid concentration of 70% by weight was obtained. The obtained alkoxydecane was obtained by gel permeation chromatography. The condensate was measured to have a polystyrene-equivalent weight average molecular weight Mw of 3,500. Thus, it was confirmed that an alkoxydecane condensate was obtained. (2) Preparation of a resist material as a resin composition: 10 parts by weight A solution containing alkoxydecane condensate as a siloxane polymer (solid content: 70% by weight), 0.7 parts by weight of a photoacid generator as a polymerization initiator (manufactured by Midori Chemical Co., Ltd., model: PAI -101), 10 parts by weight of titanium dioxide as a white filler (manufactured by Ishihara Sangyo Co., Ltd., model: CR-50), and 0.14 parts by weight of dibutoxy hydrazine as a sensitizer (Kawasaki Chemical Co., Ltd.) After the mixing was carried out for 2 minutes by a mixer, mixing was carried out using a three-roll mill. Thereafter, the mixture was defoamed for 3 minutes using a mixer (manufactured by Thinky Corporation, 'Degassing Stirling SP-500), thereby obtaining resistance. Etchant material (Comparative Example 1) (1) Preparation of varnish A 40 parts by weight of acrylamide phthalate (XP-4000B), 40 parts by weight of epoxy acrylate (SUMIFLASH A), and 3 parts by weight Aluminum integrator (ALCH), which was stirred and heated under normal pressure for 13 minutes at 13 (TC) to produce varnish A. (2) Manufacture of solder resist ink I37746.doc -38 - 200937123 formulated 20 parts by weight of polybutadiene acrylate (R_45ACR), 1 part by weight of epoxy acrylate (SP-1509), 30 parts by weight of barium sulfate, 15 parts by weight of pentaerythritol tetraacrylate, 20 parts by weight Polyethylene glycol diacrylate, 4 parts by weight of gel varnish, 酞 part by weight of phthalocyanine green, 4 parts by weight of 2-ethyl hydrazine, 50 parts by weight of the varnish obtained in the above (1) A, and 1 part by weight of the surfactant, by a conventional method by a three-roll mill Mixing • The formulation is uniformly dispersed to thereby produce a solder resist ink as a resist material. β (Evaluation) (1) Production of resist film The obtained resist material is obtained by screen printing. Coating on a substrate formed of glass in a thickness of 3 Å. Screen printing is performed under the following conditions, that is, a squeegee speed: 25 〇 mm / sec, a squeegee pressure · 0.17 MPa, Blade pressure: 〇17 MPa, back pressure: 〇.1〇MPa, blade speed: 50 mm/sec, and clearance: 17 mm. After coating, the resist material was dried in an oven at 8 Torr for 20 minutes to form a resist material layer on the substrate. Next, the resist material layer was irradiated with a wavelength of 365 nmi by ultraviolet illuminance of 100 mW/cm 2 by ultraviolet ray illumination of 100 mW/cm 2 via a photomask having a specific pattern using an ultraviolet ray irradiation device to achieve an irradiation energy of 5 〇〇 mJ/cm 2 . Ultraviolet light. After the ultraviolet ray was irradiated, in Example 1, the resist material layer was heated by a heating plate of 1 ° C for 2 minutes. Thereafter, when the resist material of the example was used, the resist material layer was immersed in a 2 38% aqueous solution of tetramethylammonium hydroxide for development, when the resist material of the comparative example was used. The resist layer 137746.doc -39· 200937123 was immersed in 1 〇/ of sodium carbonate. Development is carried out in an aqueous solution to remove the anti-material material layer of the unexposed portion, thereby forming a resist film on the substrate. (2) Heat resistance test of resist film The obtained resist film was allowed to stand at 27 (TC for 2 minutes to obtain an evaluation sample. Further, an evaluation sample obtained by placing the obtained resist film at 288 ° C for 2 minutes was prepared. - For the newly formed resist film (initial), the resist film (27 (TC, 2 minutes), and 288 after standing at 270 ° C for 2 minutes. (: Resist film® after 2 minutes of placement) °C, 2 minutes) 'Colorimetric colorimeter (manufactured by K〇nica Minolta Co., Ltd., CR-400) was used for colorimetry. The color representation method of the XYZ color system (CIE 1931) specified in JIS Z8701 was obtained. In addition, the chromaticity coordinates (X, y) indicate hue and color, and the tristimulus value Y indicates reflectance and brightness. The colorimetric results are shown in Table 1 below. The chromaticity diagram of the χγζ color system shows the chromaticity coordinates (X, y) of the resist films of the examples and comparative examples before and after the heat resistance test. Further, Fig. 5 schematically shows the enamel color. Chromaticity diagram of the system. 137746.doc -40- 200937123 [Table 1] Example 1 Comparative Example 1 Initial Y 89.51 80.24 X 0.3118 0.3132 y 0.3298 0.3332 270°C, 2 minutes Y 88.78 76.98 X 0.3130 0.3182 y 0.3318 0.3395 ΔΥ -0.73 -3.26 △X 0.0012 0.0050 Δy 0.0020 0.0063 288°C, 2 minutes Υ 88.31 77.25 X 0.3121 0.3237 y 0.3308 0.3450 ΔΥ -1.2 -2.99 △X 0.0003 0.0105 △y 0.0010 0.0118

△ Υ、Δχ、Ay分別表示耐熱性試驗前(初期)開始之Υ、x、y 之變化值 使用實施例1之抗蝕劑材料所形成之抗蝕膜,耐熱性試 驗前後之抗姓膜的色度座標Ο、y)之變化較小,Αχ及Ay均 為0.005以下,變色程度極小。目測觀察時,耐熱性試驗 前之實施例1之抗蝕膜為白色,且耐熱性試驗後之實施例1 之抗蝕膜中確認不到黃變。 相對於此,使用比較例1之抗蝕劑材料所形成之抗蝕 膜,耐熱性試驗前後之抗蝕膜的色度座標(X、y)之變化較 137746.doc -41 - 200937123 大’ Δχ及Ay均超過0.005,變色程度極大。目測觀察時, 耐熱性試驗後之比較例1之抗蚀膜中確認發生黃變。 其次’製備實施例2〜33及比較例2〜4之抗蝕劑材料時, 準備以下材料。 為合成矽氧烷聚合物1〜21,作為懷氡基矽烷,使用3_ (縮水甘油氧基丙基)三甲氧基矽烷(GTMS)、2-(3,4-環氧環 己基)乙基三甲氧基矽烷(EpTMS)、3-(縮水甘油氧基丙基) 甲基二曱氧基石夕烧(GMDMS)、曱基三甲氧基矽院(MTMS) 及二甲基二曱氧基矽烷(DMDMS)中之至少一種。 (矽氡烷聚合物1) 於安裝有冷凝管之1000 ml燒瓶中,加入0.16 m〇l之 GTMS、0.24 mol之 MTMS、0.6 mol之 DMDMS、及 87.4 ml 之丙二醇單曱醚乙酸酯,獲得溶液。 使用半圓型之機械攪拌器,一面攪拌上述溶液一面緩慢 滴加在43.2 ml水中溶解有0.28 g氫氧化鉀的水溶液。其 後,藉由加熱套而使溶液於5(TC下反應3小時。接著,使 用蒸發器’於2000 Pa之壓力、40。(:及1小時之條件下,將 與水之縮合反應所生成之甲醇及殘留水去除。之後,放置 燒瓶直至達到室溫為止,獲得含有矽氧烷聚合物丨之溶 液°所得之含有矽氧烷聚合物1之溶液之固形物濃度為50 重量%。 (矽氧烷聚合物2、4、6〜8、10、12、17、21) 如下述表2所示,變更烷氧基矽烷之種類及調配量,且 以縮合後之樹脂固形物達到50重量%之方式來調整丙二醇 137746.doc -42- 200937123 單甲醚乙酸酯之添加量,除此以外,以與矽氧烷聚合物丄 相同之方式,獲得含有矽氧烷聚合物2、4、6〜8、1〇、 12、17、21之溶液。所得之含有矽氧烷聚合物2、4、 6〜8、1〇、12、17、21之溶液之固形物濃度為5〇重量0/〇。 (矽氧烷聚合物3) 於安裝有冷凝管之1〇〇〇 ml燒瓶中,加入〇89 m〇1之 GTMS、0.11 m〇iiDMDMS、2〇〇 ml之甲苯、及67 3 之 丙二醇單曱醚乙酸酯,獲得溶液。 使用半圓型之機械攪拌器,一面攪拌上述溶液一面緩慢 滴加在43.2 ml水中溶解有〇·28 g氫氧化鉀的水溶液。其 後’藉由加熱套使溶液於5(TC下反應3小時。接著,使用 蒸發器’於2000 Pa之壓力、40。(:及1小時之條件下,將與 水之縮合反應所生成之甲醇及殘留水去除。之後,放置燒 瓶直至達到至溫為止’獲得含有石夕氧烧聚合物3之溶液。 所得之含有矽氧烷聚合物3之溶液之固形物濃度為5〇重量 %。 (矽氧烷聚合物5、9、11、14〜16) 如下述表2所示,變更烷氧基矽烷之種類及調配量,且 以縮合後之樹脂固形物達到50重量%之方式來調整丙二醇 早节謎乙酸酯之添加量’除此以外,以與矽氧烷聚合物3 相同之方式,獲得含有矽氧烷聚合物5、9、11、14〜16之 溶液°所得之含有矽氧烷聚合物5、9、11、14〜16之溶液 之固形物濃度為50重量%。 (矽氧烷聚合物13) 137746.doc •43- 200937123 於安裝有冷凝管之1000 ml燒瓶中,加入0·26 mol之 GTMS、0.26 mol之 EpTMS、0.48 mol之 DMDMS、100 ml 甲苯、及53.7 ml丙二醇單甲醚乙酸酯,獲得溶液。 使用半圓型之機械攪拌器,一面攪拌上述溶液一面緩慢 滴加在43.2 ml水中溶解有0.28 g氫氧化鉀的水溶液。其 後’藉由加熱套使溶液於50eC下反應3小時。接著,使用 蒸發器’於2000 Pa之壓力、40°C及1小時之條件下,將與 水之縮合反應所生成之曱醇及殘留水去除。之後,放置燒 瓶直至達到室溫為止,獲得含有矽氧烷聚合物13之溶液。 所得之含有矽氧烷聚合物13之溶液之固形物濃度為50重量 %。 (矽氧烷聚合物18) 於安裝有冷凝管之1000 ml燒瓶中,加入0.26 mol之 GTMS、0.26 mol 之 EpTMS、及 0.48 mol 之 DMDMS,獲得 溶液* 使用半圓型之機械攪拌器,一面攪拌上述溶液一面緩慢 滴加在43 ·2 ml水中溶解有0.28 g氫氧化鉀的水溶液。其 後’藉由加熱套使溶液於50°C下反應3小時。接著,使用 蒸發器,於2000 Pa之壓力、40°C及1小時之條件下,將與 水之縮合反應所生成之曱醇及殘留水去除》添加53.7 ml丙 二醇單甲醚乙酸酯並攪拌而使其成為均勻溶液後,放置燒 瓶直至達到室溫為止,獲得含有矽氧烷聚合物18之溶液。 所得之含有矽氧烷聚合物18之溶液之固形物濃度為50重量 %。 137746.doc 200937123 (矽氧烷聚合物19) 於安.裝有冷凝管之1000 ml燒瓶中,加入0.26 mol之 GTMS、0.26 mol之 EpTMS、〇·48 mol之 DMDMS、300 ml 甲苯、及53.7 ml丙二醇單甲醚乙酸酯,獲得溶液。 使用半圓型之機械攪拌器,一面攪拌上述溶液一面缓慢 滴加在43.2 ml水中溶解有0.28 g氫氧化鉀的水溶液《其 後’藉由加熱套使溶液於50°C下反應3小時。接著,使用 蒸發器,於2000 Pa之壓力、4(TC及1小時之條件下,將與△ Υ, Δχ, and Ay respectively represent the change in the value of x, y before the start of the heat resistance test (initial), and the resist film formed using the resist material of Example 1, and the anti-surname film before and after the heat resistance test. The change in chromaticity coordinates y and y) is small, and both Αχ and Ay are 0.005 or less, and the degree of discoloration is extremely small. In the visual observation, the resist film of Example 1 before the heat resistance test was white, and yellowing was not observed in the resist film of Example 1 after the heat resistance test. On the other hand, using the resist film formed of the resist material of Comparative Example 1, the change in the chromaticity coordinates (X, y) of the resist film before and after the heat resistance test was larger than that of 137746.doc -41 - 200937123. Both Ay and Ay exceeded 0.005, and the degree of discoloration was extremely large. When visually observed, yellowing was confirmed in the resist film of Comparative Example 1 after the heat resistance test. Next, when the resist materials of Examples 2 to 33 and Comparative Examples 2 to 4 were prepared, the following materials were prepared. For the synthesis of decane polymers 1 to 21, as a decyl decane, 3_(glycidoxypropyl)trimethoxydecane (GTMS), 2-(3,4-epoxycyclohexyl)ethyltrimethyl Oxaloxane (EpTMS), 3-(glycidoxypropyl)methyldimethoxyxanthine (GMDMS), mercaptotrimethoxyphthalate (MTMS) and dimethyldimethoxydecane (DMDMS) At least one of them. (Hydrane polymer 1) In a 1000 ml flask equipped with a condenser, 0.16 m·l of GTMS, 0.24 mol of MTMS, 0.6 mol of DMDMS, and 87.4 ml of propylene glycol monoterpene ether acetate were obtained. Solution. Using a semicircular mechanical stirrer, while stirring the above solution, an aqueous solution in which 0.28 g of potassium hydroxide was dissolved in 43.2 ml of water was slowly added dropwise. Thereafter, the solution was heated at 5 °C for 3 hours by heating the jacket. Then, using a vaporizer at a pressure of 2000 Pa, 40 ((: and 1 hour), a condensation reaction with water was carried out. The methanol and the residual water were removed. Thereafter, the flask was placed until the room temperature was reached, and the solution containing the oxime polymer yttrium obtained was a solid solution concentration of 50% by weight. Oxyalkane Polymers 2, 4, 6 to 8, 10, 12, 17, 21) The types and amounts of alkoxydecane were changed as shown in Table 2 below, and the resin solids after condensation reached 50% by weight. In addition, the amount of the propylene glycol 137746.doc-42-200937123 monomethyl ether acetate was adjusted, and in the same manner as the oxime polymer 丄, the siloxane-containing polymer 2, 4, 6 was obtained. a solution of ~8, 1〇, 12, 17, 21, and the obtained solid solution concentration of the solution containing the siloxane polymer of 2, 4, 6~8, 1〇, 12, 17, 21 is 5 〇 weight 0/矽 (矽 烷 聚合物 3 3 矽 矽 矽 矽 矽 矽 矽 矽 矽 GT GT GT GT GT GT GT GT GT GT GT GT GT GT GT GT GT GT 0.11 m〇iiDMDMS, 2〇〇ml of toluene, and 67 3 of propylene glycol monoterpene ether acetate were obtained to obtain a solution. Using a semicircular mechanical stirrer, the solution was slowly added dropwise while dissolved in 43.2 ml of water. · 28 g of an aqueous solution of potassium hydroxide. Thereafter, the solution was reacted at 5 (TC for 3 hours by heating the jacket. Then, using an evaporator at a pressure of 2000 Pa, 40. (: and 1 hour, The methanol and residual water produced by the condensation reaction with water are removed. Thereafter, the flask is placed until it reaches the temperature to obtain a solution containing the oxalate polymer 3. The solid solution of the obtained solution containing the siloxane polymer 3 The concentration of the substance was 5% by weight. (Hexane polymer 5, 9, 11, 14 to 16) The type and amount of the alkoxy decane were changed as shown in the following Table 2, and the resin solid after condensation was used. The addition amount of the propylene glycol early-family acetate was adjusted in such a manner as to achieve 50% by weight. In addition, the siloxane-containing polymer 5, 9, 11, 14 was obtained in the same manner as the siloxane polymer 3. The solution containing 16 is obtained from a siloxane polymer 5 The solid concentration of the solution of 9, 11, 14 to 16 is 50% by weight. (Hexane polymer 13) 137746.doc •43- 200937123 In a 1000 ml flask equipped with a condenser, 0. 26 mol is added. GTMS, 0.26 mol of EpTMS, 0.48 mol of DMDMS, 100 ml of toluene, and 53.7 ml of propylene glycol monomethyl ether acetate were used to obtain a solution. Using a semicircular mechanical stirrer, the solution was slowly added dropwise in 43.2 ml of water while stirring. An aqueous solution of 0.28 g of potassium hydroxide was dissolved. Thereafter, the solution was reacted at 50 ° C for 3 hours by means of a heating mantle. Next, the sterol and residual water formed by the condensation reaction with water were removed using an evaporator at a pressure of 2000 Pa, 40 ° C and 1 hour. Thereafter, the flask was placed until it reached room temperature, and a solution containing the siloxane polymer 13 was obtained. The resulting solution containing the decane polymer 13 had a solid concentration of 50% by weight. (Hexane polymer 18) In a 1000 ml flask equipped with a condenser, 0.26 mol of GTMS, 0.26 mol of EpTMS, and 0.48 mol of DMDMS were added to obtain a solution. * Stir the above using a semicircular mechanical stirrer. The solution was slowly added dropwise to an aqueous solution of 0.28 g of potassium hydroxide dissolved in 43 · 2 ml of water. Thereafter, the solution was reacted at 50 ° C for 3 hours by means of a heating mantle. Next, using an evaporator, removing sterol and residual water formed by condensation reaction with water under a pressure of 2000 Pa, 40 ° C and 1 hour, adding 53.7 ml of propylene glycol monomethyl ether acetate and stirring After making it a homogeneous solution, the flask was placed until it reached room temperature, and a solution containing the siloxane polymer 18 was obtained. The resulting solution containing the siloxane polymer 18 had a solid concentration of 50% by weight. 137746.doc 200937123 (Hexane Polymer 19) In a 1000 ml flask equipped with a condenser, 0.26 mol of GTMS, 0.26 mol of EpTMS, 〇·48 mol of DMDMS, 300 ml of toluene, and 53.7 ml were added. Propylene glycol monomethyl ether acetate to obtain a solution. Using a semicircular mechanical stirrer, while stirring the above solution, an aqueous solution in which 0.28 g of potassium hydroxide was dissolved in 43.2 ml of water was slowly added dropwise. Thereafter, the solution was reacted at 50 ° C for 3 hours by means of a heating mantle. Next, using an evaporator at a pressure of 2000 Pa, 4 (TC and 1 hour, will be

水之縮合反應所生成之甲醇及殘留水去除。之後,放置燒 瓶直至達到室溫為止,獲得含有矽氧烷聚合物19之溶液。 所得之含有矽氧烷聚合物19之溶液之固形物濃度為50重量 〇/〇。 (矽氧烷聚合物20) 於安裝有冷凝管之1000 ml燒瓶中,加入0.26 mol之 GTMS、0.26 mol 之 EpTMS、及 0.48 mol 之 DMDMS,獲得 溶液。 使用半圓型之機械攪拌器,一面攪拌上述溶液一面緩慢 滴加在43.2 ml水中溶解有0.28 g氫氧化鉀的水溶液。其 後’藉由加熱套使溶液於50°C下反應3小時。接著,使用 蒸發器,於1000 Pa之壓力、40°C及2小時之條件下,將與 水之縮合反應所生成之甲醇及殘留水去除。添加53.7 ml之 丙二醇單甲醚乙酸酯並攪拌而使其成為均勻溶液後,放置 燒瓶直至達到室溫為止,獲得含有矽氧烷聚合物20之溶 液。所得之含有矽氧烷聚合物20之溶液之固形物濃度為50 137746.doc -45· 200937123 重量%。 所得石夕氧燒聚合物1〜21之詳細内容示於下述表2。 下述表2中,表示用於合成矽氧烷聚合物之上述式(1)所 表示之碎院化合物總計1 〇〇 mol%中的、上述式(!)所表厂、 且上述式(1)中之p為2的矽烷化合物之比例。又,使用凝膠 滲透層析儀對所得矽氧烷聚合物1〜21測定之聚笨乙稀彳矣# 重量平均分子量Mw示於下述表2。進而,所得碎氧炫聚合 物1〜21之在矽原子上直接鍵結有碳原子之有機基ι〇〇%中 的具有環狀醚基之有機基的比例、以及具有環氧環己炫會 架之有機基的比例示於下述表2。The methanol and residual water produced by the condensation reaction of water are removed. Thereafter, the flask was placed until it reached room temperature, and a solution containing the siloxane polymer 19 was obtained. The resulting solution containing the siloxane polymer 19 had a solid concentration of 50% by weight. (Hexane polymer 20) To a 1000 ml flask equipped with a condenser, 0.26 mol of GTMS, 0.26 mol of EpTMS, and 0.48 mol of DMDMS were added to obtain a solution. Using a semicircular mechanical stirrer, while stirring the above solution, an aqueous solution in which 0.28 g of potassium hydroxide was dissolved in 43.2 ml of water was slowly added dropwise. Thereafter, the solution was reacted at 50 ° C for 3 hours by means of a heating mantle. Next, methanol and residual water generated by condensation reaction with water were removed using an evaporator at a pressure of 1000 Pa, 40 ° C and 2 hours. After adding 53.7 ml of propylene glycol monomethyl ether acetate and stirring it to make a homogeneous solution, the flask was placed until it reached room temperature, and a solution containing the siloxane polymer 20 was obtained. The solid solution concentration of the resulting solution containing the siloxane polymer 20 was 50 137746.doc -45 · 200937123% by weight. The details of the obtained aspartic acid-fired polymers 1 to 21 are shown in Table 2 below. In the following Table 2, the above formula (!), and the above formula (1), are shown in the total of 1 〇〇mol% of the fragment compound represented by the above formula (1) for synthesizing a siloxane polymer. The ratio of the decane compound in which p is 2. Further, the weight average molecular weight Mw of the polystyrene oxide #1 measured by the gel permeation chromatograph using the gel permeation chromatograph is shown in Table 2 below. Further, the ratio of the organic group having a cyclic ether group in the organic group 〇〇% of the carbon atom directly bonded to the ruthenium oxide polymer 1 to 21 on the ruthenium atom, and the epoxy ring The ratio of the organic groups of the shelves is shown in Table 2 below.

137746.doc -46- 200937123 【CNi 環氧當量 ^Ti Ον ίΝ 卜 卜 2 00 ^Τί (Ν <Ν CN (Ν (Ν g s g V〇 (N § o v〇 (N T·^ CN 1 5 〇 重量平均分子量 Mw 5500 4500 8000 4800 7800 5700 4700 4800 8000 6100 8400 2700 5100 7600 7800 2000 10000 50000 1500 70000 3000 D體之比例 (mol%) ^3 Ο r"H % T-H o T-H 〇 r-H V〇 躲 ^ ^ ^ nD W ^ 减*色 蛘杯 4〇 Ο Ο Ο Ο Ο Ο rn tn CN v〇 CS v〇 o 00 Os 00 00 00 00 00 1 JlX s m 杯 當 -6- 〇 笔 ^ S 靖 -U — 1 w ^ 囊鈴 Ο 00 v〇 〇\ Ο 00 m οο cn g 'O (N 00 l〇 m m ro P; 00 in m in m m m cn 1 組成(調配單位:mol) DMDMS ο 寸 ο [0.11」 o ν〇 ο 寸 ο 寸 c> 1 0-11 1 Ό o o cn c> | 0.48 | (N 〇 1 0.16 I | 0.48 | 1 0.48 I I 0.48 | I 0.48 I I 0.48 | 00 o MTMS 0.24」 m o 0.24 cn [0.36 寸 o CN o GMDMS <Ν Ο 1 (Ν d> cs ο 卜 o EpTMS 1 0.16 1 (Ν Ο 气 ο I 0.89 I r < o as o 10.26 J I 0.22 I I 0.22 I I 0.26 I I 0.26 I I 0.26 1 I 0.26 I I 0.26 I GTMS 1 0.16 1 寸 Ο I 0.89 1 o ON Ο CN d> I 0.26 | I 0.22 I I 0.22 I 1 0.26 I 1 0.26 I I 0.26 1 I 0.26 I I 0.26 I Μ 璁 •Η I 矽氧烷聚合物 No. »·—Η (Ν ro 寸 Ό ν〇 卜 00 Os o 1—H rj m 2 v〇 卜 oo Os •π Η' «5? Η ※ 冢 q4 W#φ^^·^«3 嫦&ν·δ-( ι )^-r 长喵友(ι )<,«-6-0/OOS 岂一^黎荽^^越^^^长^友二:^^^^案^鉍域^^噠^食阳长^^※ 瓦5忘硪_枇w躲駟域tatirfti杯*«-B-%ool硪奪杯wff®?够柄垅黎璁例τ屮噼铪婵^※ 137746.doc •47- 200937123 (石夕氧烧聚合物以外之材料) 828(雙紛A型環氧樹脂,日本環氧樹脂公司製造) YX8000(氫化雙盼A型環氧樹脂,日本環氧樹脂公司製造) _(雙盼F型環氧樹脂’日本環氧樹脂公司製造) Z300(具有叛基且於側鍵上具有不飽和雙鍵之樹脂, 化學工業公司製造) DPHA(二季戊四醇六丙烯酸酯) CR-5 8(金紅石型二氧化鈦,石原產業公司製造) KS-69(複合型消泡劑,Shin_EtsuS出c〇nes公司製造) 光聚合起始劑(光自由基產生劑,τρ〇,曰本siberuhegner 公司製造) 溶劑(丙二醇單曱醚乙酸酯) (實施例2) 調配72重量份之矽氧烷聚合物1、1〇〇重量份之z3〇〇(具 有叛基且於側鏈上具有不飽和雙鍵之(甲基)丙烯酸系樹 脂’ Diasel化學工業公司製造)、1〇重量份之〇ρηα(二季戊 四醇六丙烯酸酯)、12〇重量份之cr-58(金紅石型二氧化 欽’石原產業公司製造)、5重量份之KS-69(複合型消泡 劑、Shin-Etsu Silicones公司製造)、及9重量份之光聚合起 始劑(光自由基產生劑,TPO,曰本Siberuhegner公司製 造)’藉由脫泡攪拌太郎SP_500(Thinky公司製造)混合2分 鐘之後’利用三輥研磨機進行混合。其後,使用SP-500對 混合物進行3分鐘消泡,獲得作為樹脂組合物之抗蝕劑材 料。 137746.doc -48- 200937123 (實施例3〜33及比較例2〜4) 如下述表3~6所示來變更所伸爾+以 又呵便用之材料,除此以外,以 與實施例2相同之方式獲得抗蝕劑材料。 (評價) (1) 相溶性 製備抗蝕劑材料之後放置,此時觀察是否發生層分離, * 並根據下述評價基準來評價相溶性。 [相溶性之評價基準] ® 〇:放置2小時後,未發生層分離 △:放置1小時後〜2小時之間發生層分離 X :放置1小時以内發生層分離 (2) 反射率 藉由網版印刷法將所得抗蝕劑材料塗佈於由玻璃所形成 之基板上。 塗佈後,於80°C之烘箱中乾燥20分鐘,於基板上形成抗 $ 蝕劑材料層。其次,介隔具有特定圖案之光罩,使用紫外 線照射裝置,以使照射能量達到400 mJ/cm2之方式,以 100 mW/cm2之紫外線照度對抗蝕劑材料層照射4秒鐘之波 長為365 nm的紫外線。照射紫外線之後,將抗蝕劑材料層 浸潰於碳酸鈉之1重量%水溶液中進行顯影,去除未曝光 部之抗钱劑材料層,藉此於基板上形成抗蝕膜之圖案。其 後,於150°C之烘箱内加熱1小時而使抗蝕膜後硬化,藉此 獲得抗蝕膜。所得抗蝕膜之厚度為2〇 μιη。 使用色彩-色差計(Konica Minolta公司製造,CR-400)來 137746.doc •49- 200937123 測定所得評價樣品之反射率。 (3)耐熱性 於27〇t下對上述(2)反射率中獲得之評價樣品進 鐘熱處理》 3 使用色彩-色差計(Konica Minolta公司製造、CR_4〇〇)來 測定熱處理前之評價樣品之L*、a*、b*e又,測定熱處理 後之評價樣品之L*、a*、b*,並根據該等兩個測定值而求 出當熱處理後之評價樣品之以下時評價 為「◎」,當超過3且為4以下時評價為「〇」,當超過4且 為5以下時評價為「△」,當超過5時評價為「χ」,評價結 果示於下述表3〜6。 (4) 耐候性 使用UV(UltraViolet,紫外線)照射機,以使照射能量達 到100 J/cm2之方式,對上述(2)反射率中獲得之評價樣品 照射波長為365 nm之光。 使用色彩-色差計(Konica Minolta公司製造,CR-400)來 測定UV照射前之評價樣品之L*、a*、b*。又,測定照 射後之s平價樣品之L*、a*、b*,並根據該等兩個測定值來 求出ΔΕ-ab。當UV照射後之評價樣品之么以北為下時評 價為「◎」,當超過1且為2以下時評價為「〇」,當超過2 且為3以下時評價為「△」,當超過3時評價為「X」,評價 結果不於下述表3〜6。 (5) 顯影性 藉由網版印刷法將所得抗蝕劑材料以厚度達到2〇 ^瓜之 137746.doc cn 200937123 方式塗佈於玻璃基板上。網版印刷係於如下各條件下進行 的’即,刮漿板速度:250 mm/秒、刮漿板壓力:0.17 MPa、到刀壓力:ο」? MPa、背壓:〇 1〇 MPa、刮刀速 度:50 mm/秒、以及間隙:i 7 mm。 塗佈後,於80°C之烘箱中乾燥20分鐘,於基板上形成抗 姓劑材料層。其次’介隔具有圖案之光罩(開口部之寬度 為100 μιη、遮罩部之寬度為1〇〇 μιη),使用紫外線照射裝 置,以使得照射能量達到400 mJ/cm2之方式,以1〇〇 mW/cm2之紫外線照度對抗蝕劑材料層照射4秒鐘之波長為 365 nm的紫外線。其後,將抗蝕劑材料層浸潰於碳酸鈉之 1重量%水溶液中進行顯影,去除未曝光部之抗钱劑材料 層’藉此於基板上形成厚度為20 μπι之抗蝕膜。 顯影之後’於150°C下對抗蝕膜進行60分鐘熱處理。 獲得上述抗蝕膜時,使用電子顯微鏡來觀察顯影後是否 形成了圖案,藉此根據下述評價基準來評價顯影性。 [顯影性之評價基準] 〇:形成了 L/S 100 μηι之圖案 △:雖然形成了 L/S 100 μιη之圖案,但圖案之長度方向尺 寸存在10%以上之不均一 X :未形成L/S 100 μιη之圖案 (6)黏性 上述(5)顯影性之評價中,於80°C下加熱20分鐘之後, 用手指用力按壓抗餘劑材料層(於80°C下加熱20分鐘後之 抗钮膜)之表面,根據下述評償基準來評價黏性。 137746.doc •51 · 200937123 [黏性之評價基準] 〇:抗蝕膜上無手指觸痕 △•抗蝕膜上留下淡淡的手指觸痕 X:抗蝕膜上留下明顯的手指觸痕 (7)耐濕熱性 使用咼速老化試驗裝置(EHS-211M,Espec公司製造), 於130°C、相對濕度85% RH之條件下,對上述(5)顯影性之 s平價中獲得的基板上之抗蝕膜進行72小時、48小時或Μ小 時熱處理’獲得評價樣品。 觀察所得之評價樣品是否發生龜裂’藉此根據下述評價 基準來評價耐濕熱性。 ° [耐源熱性之評價基準] ◎ : 72小時熱處理之後抗蝕膜未龜裂 〇:72小時熱處理之後抗蝕膜產生龜裂,但48小時熱處理 之後抗蝕膜未龜裂 ' △ : 48小時熱處理之後抗蝕膜產生龜裂,但24小時熱處理 之後抗蝕膜未龜裂 、 X : 24小時熱處理之後抗蝕膜產生龜裂 評價結果示於下述表3〜6。 137746.doc •52· 200937123 [表3] 實施例 2 實施例 3 實施例 4 實施例 5 實施例 6 實施例 7 實施例 8 實施例 9 實施例 10 -1— _ 72一 ΊΓ 29 24 4 108 S 23 一6 74 7 30 8 — 31 9 25 III No. 10 11 ΊΤ 調 配 13 14 成 一 15 分 16 17 量 W 18 19 一20 21 R?8 YX8000 806 Z3〇<L—— 100 100 100 100 100 100 100 100 100 dpha 10 10 10 10 10 10 10 10 10 CR-5B 120 120 120 120 120 120 120 120 120 KS-69 5 5 5 5 5 5 5 5 5 光聚合起始劍 9 9 9 9 9 9 9 9 9 溶劑 酸值(mgKOH/g) 54 78 82 43 83 53 77 76 81 環氧當量(g/eq) 1055 726 653 1320 666 1062 719 715 726 酸值X環氧當量 ※l 56518 56828 53412 56172 55086 56098 55151 54334 58729 相溶性 〇 〇 〇 Δ 〇 〇 〇 〇 〇 黏性 〇 〇 〇 〇 〇 〇 〇 〇 〇 評價 顯影性 〇 〇 〇 〇 〇 〇 〇 〇 〇 反射率(%) 80 83 84 78 84 80 83 83 84 耐熱性 〇 〇 〇 〇 〇 ◎ 〇 〇 ◎ 咐滿熱性 ◎ ◎ ◎ ◎ Δ ◎ ◎ ◎ ◎ 耐候性 〇 〇 〇 〇 〇 ◎ 〇 〇 ◎ ※工樹脂成分之固形物酸值(mgKOH/g)與樹脂成分之環氧當量 (g/eq)之積 137746.doc •53- 200937123 [表4]137746.doc -46- 200937123 [CNi epoxide equivalent ^Ti Ον ίΝ 卜卜2 00 ^Τί (Ν <Ν CN (Ν (Ν gsg V〇(N § ov〇(NT·^ CN 1 5 〇 weight average MMW 5500 4500 8000 4800 7800 5700 4700 4800 8000 6100 8400 2700 5100 7600 7800 2000 10000 50000 1500 70000 3000 D body ratio (mol%) ^3 Ο r"H % TH o TH 〇rH V〇 hide ^ ^ ^ nD W ^ 减 蛘 蛘 〇Ο rn rn rn 〇 〇 Ο rn rn tn CN v〇CS v〇o 00 Os 00 00 00 00 00 1 JlX sm cup when -6- 〇 pen ^ S 靖-U — 1 w ^袋铃Ο 00 v〇〇\ Ο 00 m οο cn g 'O (N 00 l〇mm ro P; 00 in m in mmm cn 1 Composition (mixing unit: mol) DMDMS ο inch ο [0.11" o ν〇ο Inch ο c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c c o GMDMS <Ν Ο 1 (Ν d> cs ο 卜 o EpTMS 1 0.16 1 (Ν Ο ο I 0.89 I r < o as o 10.26 JI 0.22 II 0.22 II 0.26 II 0.26 II 0.26 1 I 0.26 II 0.26 I GTMS 1 0.16 1 inch Ο I 0.89 1 o ON Ο CN d> I 0.26 | I 0.22 II 0.22 I 1 0.26 I 1 0.26 II 0.26 1 I 0.26 II 0.26 I Μ Η•Η I Hexane polymer No. »·—Η (Ν ro Ό Ό 〇 00 00 Os o 1—H rj m 2 v〇 oo Os • π Η' «5? Η ※ 冢q4 W#φ^^· ^«3 嫦&ν·δ-( ι )^-r 长喵友(ι )<,«-6-0/OOS 岂一^黎荽^^越^^^长^友二:^^ ^^案^铋域^^哒^食阳长^^※ 瓦5忘硪_枇w 驷 驷 domain tatirfti cup *«-B-%ool 硪 杯 cupwff® enough 垅 垅 璁 璁 屮噼铪 屮噼铪 屮噼铪婵^※ 137746.doc •47- 200937123 (Materials other than Shixia Oxygenated Polymer) 828 (Double-type A-type epoxy resin, manufactured by Japan Epoxy Resin Co., Ltd.) YX8000 (Hydrogenated Double A-type Epoxy Resin, Japan Manufactured by Epoxy Resin Co., Ltd. _(Double-F-type epoxy resin manufactured by Nippon Epoxy Co., Ltd.) Z300 (Resin with reductive double bond on side bond, manufactured by Chemical Industry Co., Ltd.) DPHA (dipentaerythritol) Hexaacrylate) CR-5 8 (rutile titanium dioxide, manufactured by Ishihara Sangyo Co., Ltd.) KS- 69 (composite defoamer, manufactured by Shine Etsus Co., Ltd.) Photopolymerization initiator (photoradical generator, τρ〇, manufactured by Siberuhegner Co., Ltd.) Solvent (propylene glycol monoterpene ether acetate) (Example) 2) Blending 72 parts by weight of a naphthenic polymer 1, 1 part by weight of z3 〇〇 ((meth)acrylic resin having a repulsive group and having an unsaturated double bond in a side chain] Diasel Chemical Industry Co., Ltd. Manufactured), 1 part by weight of 〇ρηα (dipentaerythritol hexaacrylate), 12 parts by weight of cr-58 (rutile-type dioxin chins), 5 parts by weight of KS-69 (composite type) Antifoaming agent, manufactured by Shin-Etsu Silicones Co., Ltd., and 9 parts by weight of a photopolymerization initiator (photo-free radical generator, TPO, manufactured by Siberuhegner Co., Ltd.)' by stirring and stirring Taro SP_500 (manufactured by Thinky Co., Ltd.) After mixing for 2 minutes, 'mixing was carried out using a three-roll mill. Thereafter, the mixture was defoamed for 3 minutes using SP-500 to obtain a resist material as a resin composition. 137746.doc -48- 200937123 (Examples 3 to 33 and Comparative Examples 2 to 4) The materials used in the following paragraphs 3 to 6 are changed as shown in the following Tables 3 to 6, and the examples are the same as the examples. 2 A resist material was obtained in the same manner. (Evaluation) (1) Compatibility The resist material was placed and placed, and at this time, whether or not layer separation occurred was observed, and the compatibility was evaluated according to the following evaluation criteria. [Evaluation criteria for compatibility] ® 〇: Layer separation did not occur after 2 hours of standing △: Layer separation occurred between 1 hour and 2 hours after leaving X: Layer separation occurred within 1 hour of placement (2) Reflectance by net The printing method applied the obtained resist material to a substrate formed of glass. After coating, it was dried in an oven at 80 ° C for 20 minutes to form a layer of resist material on the substrate. Next, a mask having a specific pattern is interposed, and an ultraviolet irradiation device is used to irradiate the resist material layer for 4 seconds at a wavelength of 400 mJ/cm 2 with an ultraviolet illuminance of 100 mW/cm 2 for 365 nm. UV rays. After the ultraviolet ray is irradiated, the resist material layer is immersed in a 1% by weight aqueous solution of sodium carbonate to develop, and the anti-money material layer of the unexposed portion is removed, whereby a pattern of a resist film is formed on the substrate. Thereafter, the resist film was post-hardened by heating in an oven at 150 ° C for 1 hour, thereby obtaining a resist film. The thickness of the obtained resist film was 2 Å μηη. The reflectance of the obtained evaluation sample was measured using a color-color difference meter (manufactured by Konica Minolta Co., Ltd., CR-400) 137746.doc • 49- 200937123. (3) Heat resistance at 27 〇t, the evaluation sample obtained by the above (2) reflectance was subjected to heat treatment. 3 A color-color difference meter (manufactured by Konica Minolta Co., Ltd., CR_4 〇〇) was used to measure the evaluation sample before heat treatment. L*, a*, and b*e are also measured for L*, a*, and b* of the evaluation sample after the heat treatment, and are evaluated as "the following evaluation samples after the heat treatment based on the two measured values". ◎", when it is more than 3 and is 4 or less, it is evaluated as "〇", and when it exceeds 4 and is 5 or less, it is evaluated as "△", and when it exceeds 5, it is evaluated as "χ", and the evaluation result is shown in the following Table 3~ 6. (4) Weather resistance The evaluation sample obtained in the above (2) reflectance was irradiated with light having a wavelength of 365 nm by using an ultraviolet (Ultra Violet) irradiator so that the irradiation energy reached 100 J/cm2. L*, a*, b* of the evaluation sample before UV irradiation were measured using a color-color difference meter (manufactured by Konica Minolta Co., Ltd., CR-400). Further, L*, a*, and b* of the s parity sample after the irradiation were measured, and ΔΕ-ab was obtained from the two measured values. When the evaluation sample after UV irradiation was north, the evaluation was "◎", and when it was more than 1 and 2 or less, it was evaluated as "〇", and when it was more than 2 and 3 or less, it was evaluated as "△". The evaluation was "X" at 3 o'clock, and the evaluation results were not in Tables 3 to 6 below. (5) Developability The obtained resist material was applied onto a glass substrate by a screen printing method to a thickness of 2 〇 瓜 137746.doc cn 200937123. Screen printing was carried out under the following conditions: i.e., squeegee speed: 250 mm/sec, squeegee pressure: 0.17 MPa, to knife pressure: ο"? MPa, back pressure: 〇 1〇 MPa, scraper speed: 50 mm/sec, and clearance: i 7 mm. After coating, it was dried in an oven at 80 ° C for 20 minutes to form an anti-surname material layer on the substrate. Next, 'the mask having a pattern (the width of the opening is 100 μm, the width of the mask is 1 μmηη), and the ultraviolet irradiation device is used so that the irradiation energy reaches 400 mJ/cm 2 , 1 〇紫外线mW/cm2 ultraviolet illuminance The resist material layer was irradiated with ultraviolet rays having a wavelength of 365 nm for 4 seconds. Thereafter, the resist material layer was immersed in a 1% by weight aqueous solution of sodium carbonate to develop, and the unreacted portion of the anti-money material layer was removed, whereby a resist film having a thickness of 20 μm was formed on the substrate. After the development, the resist film was subjected to heat treatment at 150 ° C for 60 minutes. When the resist film was obtained, it was observed whether or not a pattern was formed after development using an electron microscope, whereby the developability was evaluated in accordance with the following evaluation criteria. [Evaluation criteria for developability] 〇: Pattern of L/S 100 μηι was formed Δ: Although a pattern of L/S 100 μm was formed, the length dimension of the pattern was 10% or more uneven X: L/ was not formed Pattern of S 100 μm (6) Viscosity In the evaluation of the above (5) developability, after heating at 80 ° C for 20 minutes, the layer of the anti-detergent material was pressed with a finger (after heating at 80 ° C for 20 minutes) The surface of the button film was evaluated for viscosity according to the following evaluation criteria. 137746.doc •51 · 200937123 [Evaluation Criteria for Viscosity] 〇: No finger touch on the resist film △• A slight finger touch on the resist film X: Significant finger touch marks on the resist film (7) Moisture and heat resistance The substrate obtained in the above (5) developability s parity was obtained under the conditions of 130 ° C and a relative humidity of 85% RH using an aging test apparatus (EHS-211M, manufactured by Espec Co., Ltd.). The resist film was subjected to heat treatment for 72 hours, 48 hours or Μ hours to obtain an evaluation sample. Whether or not the obtained evaluation sample was cracked was observed, and the heat and humidity resistance was evaluated based on the following evaluation criteria. ° [Evaluation criteria for resistance to source heat] ◎ : After the heat treatment for 72 hours, the resist film was not cracked. After the heat treatment for 72 hours, the resist film was cracked, but the resist film was not cracked after 48 hours of heat treatment. △ : 48 hours The resist film was cracked after the heat treatment, but the resist film was not cracked after the heat treatment for 24 hours, and the results of the crack evaluation of the resist film after the heat treatment for X: 24 hours are shown in Tables 3 to 6 below. 137746.doc •52· 200937123 [Table 3] Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Example 8 Example 9 Example 10 -1 - _ 72 ΊΓ 29 24 4 108 S 23 a 6 74 7 30 8 — 31 9 25 III No. 10 11 调 Mixing 13 14 into a 15 minutes 16 17 Amount W 18 19 A 20 21 R?8 YX8000 806 Z3〇<L——100 100 100 100 100 100 100 100 100 dpha 10 10 10 10 10 10 10 10 10 CR-5B 120 120 120 120 120 120 120 120 120 KS-69 5 5 5 5 5 5 5 5 5 Photopolymerization Start Sword 9 9 9 9 9 9 9 9 9 Solvent value (mgKOH/g) 54 78 82 43 83 53 77 76 81 Epoxy equivalent (g/eq) 1055 726 653 1320 666 1062 719 715 726 Acid value X epoxy equivalent ※l 56518 56828 53412 56172 55086 56098 55151 54334 58729 compatibility 〇〇〇Δ 〇〇 〇〇 Viscosity 〇〇〇〇〇〇〇〇〇 Evaluation developability 〇〇〇〇〇〇〇〇〇 reflectance (%) 80 83 84 78 84 80 83 83 84 Heat resistance 〇〇〇〇〇 ◎ 〇〇 ◎咐 热 ◎ ◎ ◎ Δ ◎ ◎ ◎ ◎ Weather resistance 〇〇〇〇〇 ◎ 〇〇 ◎ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 137746.doc •53- 200937123 [Table 4]

調 配 成 分 量 彖施例· 12 f1施例' 13 纪施例^ 14 施例^ 15 f施㈣· 16 f施例 17 賞施例^ 18 實施例 19 1 III No. 2 一 3 4 5 6 7 8 9 10 110 11 25 12 27 13 32 14 34 15 34 16 32 17 32 18 32 19 20 21 828 YX8000 806 Z300 100 100 100 100 100 100 100 100 100 dpha 10 10 10 10 10 10 10 10 10 CR-58 120 120 120 120 120 120 120 120 120 KS-69 5 5 5 5 5 5 5 5 5 光聚合起始劑 9 9 9 9 9 9 9 9 9 溶劑 酸值(mgKOH/g) 42 81 79 75 74 74 75 75 75 環氧當量(g/eq) 1327 689 785 747 762 744 809 747 747 酸值X環氧當量※1 55629 55747 62107 56129 56116 54800 60787 56129 56129 評價 相溶性 △ 〇 〇 〇 〇 〇 〇 〇 〇 黏性 〇 〇 〇 〇 〇 〇 〇 〇 〇 顯影性 〇 〇 〇 〇 〇 〇 〇 〇 〇 反射率(%) 78 84 83 82 81 81 82 82 82 耐熱性 〇 ◎ 〇 〇 〇 〇 〇 〇 〇 耐濕熱性 ◎ △ ◎ ◎ ◎ A ◎ ◎ ◎ 对候性 〇 ◎ 〇 〇 〇 〇 〇 〇 〇 ※l樹脂成分之固形物酸值(mgKOH/g)與樹脂成分之環氧當量 (g/eq)之積 137746.doc -54- 200937123[表5]Formulation amount 彖 Example · 12 f1 Example ' 13 Cases ^ 14 Example ^ 15 f Shi (4) · 16 f Example 17 Appreciation Example 18 18 Example 19 1 III No. 2 1 3 4 5 6 7 8 9 10 110 11 25 12 27 13 32 14 34 15 34 16 32 17 32 18 32 19 20 21 828 YX8000 806 Z300 100 100 100 100 100 100 100 100 100 dpha 10 10 10 10 10 10 10 10 10 CR-58 120 120 120 120 120 120 120 120 120 KS-69 5 5 5 5 5 5 5 5 5 Photopolymerization initiator 9 9 9 9 9 9 9 9 9 Solvent value (mgKOH/g) 42 81 79 75 74 74 75 75 75 Epoxy equivalent (g/eq) 1327 689 785 747 762 744 809 747 747 Acid value X epoxy equivalent ※1 55629 55747 62107 56129 56116 54800 60787 56129 56129 Evaluation of compatibility △ 〇〇〇〇〇〇〇〇 viscous 〇 〇〇〇〇〇〇〇〇 developability 〇〇〇〇〇〇〇〇〇 reflectivity (%) 78 84 83 82 81 81 82 82 82 Heat resistance 〇 ◎ 〇〇〇〇〇〇〇 Heat and humidity resistance ◎ △ ◎ ◎ ◎ A ◎ ◎ ◎ 候 〇 〇〇〇〇〇〇〇 〇〇〇〇〇〇〇 l ※l resin The product of the solid acid value of the component (mgKOH/g) and the epoxy equivalent of the resin component (g/eq) 137746.doc -54- 200937123 [Table 5]

❷ 實&例 20 實施例 21 實施例 22 貪施例 23 黉施例 24 實施例 25 實施例 26 實施例 27 實施例 28 1 ΊΓ .3 4 5 7 Ϊ 16 25 37 47 62 8 78 III 11 No. 12 調 13 配 ΊΓΓ 成 分 量 W T5 16 17 18 19 32 20 32 21 828 YX8000 806 Z300 100 100 100 100 100 100 100 100 100 DPHA 10 10 10 10 10 10 10 10 10 CR-58 120 120 120 120 120 120 120 120 120 一 KS-69 5 5 5 5 5 5 5 5 5 光聚合起始贫 J 9 9 9 9 9 9 9 9 9 溶劑 酸值(mgKOH/g) 75 75 90 81 72 65 58 99 51 環氧當量(g/eq) 747 747 1174 833 638 549 471 2123 421 酸值X環氧當量 ※l 56129 56129 105272 67374 45523 35837 27167 210543 21594 相溶性 〇 Δ 〇 〇 〇 〇 〇 〇 Δ 黏性 Δ 〇 〇 〇 〇 〇 〇 〇 Δ 評價 顯影性 〇 〇 〇 〇 〇 〇 〇 〇 〇 反射率(%) 82 82 84 84 82 81 80 84 79 耐熱性 〇 〇 〇 〇 〇 〇 〇 〇 〇 耐濕熱性 ◎ ◎ ◎ ◎ ◎ ◎ ◎ Δ ◎ 耐候性 〇 〇 ◎ 〇 〇 〇 〇 ◎ 〇 ※l樹脂成分之固形物酸值(mgKOH/g)與樹脂成分之環氧當量 (g/eq)之積 137746.doc •55- 200937123 [表6]Example & Example 20 Example 21 Example 22 Greedy Example 23 Example 24 Example 25 Example 26 Example 27 Example 28 1 ΊΓ .3 4 5 7 Ϊ 16 25 37 47 62 8 78 III 11 No 12 Adjustment 13 Distribution Component amount W T5 16 17 18 19 32 20 32 21 828 YX8000 806 Z300 100 100 100 100 100 100 100 100 100 DPHA 10 10 10 10 10 10 10 10 10 CR-58 120 120 120 120 120 120 120 120 120 A KS-69 5 5 5 5 5 5 5 5 5 Photopolymerization initial lean J 9 9 9 9 9 9 9 9 9 Solvent value (mgKOH/g) 75 75 90 81 72 65 58 99 51 Epoxy Equivalent (g/eq) 747 747 1174 833 638 549 471 2123 421 Acid value X epoxy equivalent ※l 56129 56129 105272 67374 45523 35837 27167 210543 21594 Compatibility 〇Δ 〇〇〇〇〇〇Δ Viscosity Δ 〇〇〇〇 〇〇〇 Δ Evaluation of developability 〇〇〇〇〇〇〇〇〇 reflectance (%) 82 82 84 84 82 81 80 84 79 Heat resistance 〇〇〇〇〇〇〇〇〇 Moisture resistance ◎ ◎ ◎ ◎ ◎ ◎ ◎ Δ ◎ Weather resistance 〇〇 〇〇〇〇 〇〇〇〇 〇 l l l l l 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂

----- 實施例 29 比較例 2 比較例 3 比較例 4 實施例 30 實施例 31 實施例 32 實施例 33 調 配 成 分 量 響 1 2 3 Τ" 5 6 7 8 31 31 31 31 9 10 11 12 13 14 15 16 17 18 19 20 21 31 828 17 YX80〇〇~~~ 19 806 15 Ζ300 100 100 100 100 100 100 100 100 DPHA 10 10 10 10 10 10 10 10 CR-58 120 120 120 120 47 95 145 250 KS-69 5 5 5 5 5 5 5 5 光聚合起始劊 9 9 9 9 9 9 9 9 溶痢 7 8 7 酸值(mgKOH/g) 82 79 84 76 76 76 76 環氧當量(g/eq) - 712 712 682 715 715 715 715 酸乇 ίχ環氧當量※1 0 58001 56289 57387 54334 54334 54334 54334 評價 相溶性 Δ 〇 〇 〇 〇 〇 〇 〇 黏性 〇 〇 〇 〇 〇 〇 〇 〇 顯影性 〇 〇 〇 〇 〇 〇 Δ Δ 反射率(%) 83 83 83 82 72 78 86 92 耐熱性 ◎ X X X 〇 ◎ ◎ ◎ Γ耐濕熱性 △ ◎ ◎ ◎ ◎ ◎ 〇 Δ 耐候性 ◎ X △ X △ 〇 ◎ ◎ ※l樹脂成分之固形物酸值(mgKOH/g)與樹脂成分之環氧當量 (g/eq)之積 137746.doc •56· 200937123 其次’、進了步製備其他抗_材料時,準備以下材料。 為合成下述矽氧烷聚合物22〜32,作為烷氧基矽烷,使 用甲基三甲氧基矽烷、二曱基二甲氧基矽烷、3 (三曱氧基 石夕烧基)丙基琥拍酸軒三甲氧基錢(信越化學工業公司製----- Example 29 Comparative Example 2 Comparative Example 3 Comparative Example 4 Example 30 Example 31 Example 32 Example 33 The amount of the formulated component was 1 2 3 Τ" 5 6 7 8 31 31 31 31 9 10 11 12 13 14 15 16 17 18 19 20 21 31 828 17 YX80〇〇~~~ 19 806 15 Ζ300 100 100 100 100 100 100 100 100 DPHA 10 10 10 10 10 10 10 10 CR-58 120 120 120 120 47 95 145 250 KS-69 5 5 5 5 5 5 5 5 Photopolymerization start 刽9 9 9 9 9 9 9 9 Solubility 7 8 7 Acid value (mgKOH/g) 82 79 84 76 76 76 76 Epoxy equivalent (g/eq ) - 712 712 682 715 715 715 715 Acid 乇 χ χ Epoxy equivalent ※1 0 58001 56289 57387 54334 54334 54334 54334 Evaluation of compatibility Δ 〇〇〇〇〇〇〇 viscous 〇〇〇〇〇〇〇〇 developability 〇〇 〇〇〇〇Δ Δ reflectance (%) 83 83 83 82 72 78 86 92 Heat resistance ◎ XXX 〇 ◎ ◎ ◎ Moisture and heat resistance △ ◎ ◎ ◎ ◎ 〇 〇 Δ Weather resistance ◎ X △ X △ 〇 ◎ ◎ * The product of the solid content acid value (mgKOH/g) of the resin component and the epoxy equivalent (g/eq) of the resin component 137746 .doc •56· 200937123 Next, when preparing other anti-materials, prepare the following materials. To synthesize the following alkoxylate polymers 22 to 32, as the alkoxydecane, methyltrimethoxydecane, dimercaptodimethoxydecane, and 3 (trimethoxyxanthene)propyl sulphate were used. Acid Xuan Trimethoxy Money (Shin-Etsu Chemical Industry Co., Ltd.

造,X12-967)、3·曱基丙稀酿氧基丙基三甲氧基石夕烧、3-曱基丙烯醯氧基丙基甲基二曱氧基矽烷、弘丙烯醯氧基丙 基三曱氧基矽烷、3·乙烯氧基丙基三甲氧基矽烷、3'缩水 甘油氧基丙基三甲氧基錢、3•縮水甘油氧基丙基甲基二 曱氧基矽&、2-(3,4-環氧環己基)乙“甲氧基矽烷中之 至少一種。 (矽氧烷聚合物22) 於安裝有冷凝管之100 ml燒瓶中,加入15瓜❶丨甲基三甲 氧基矽烷、5 mol之3·(三甲氧基矽烷基)丙基琥珀酸酐三甲 氧基矽烷(信越化學工業公司製造,Χ12·967)、8〇 m〇i23_ 甲基丙烯醯氧基丙基甲基二曱氧基矽烷、15 mi水、及2〇 ml丙二醇單甲醚乙酸酯,獲得溶液。 使用半圓型之機械攪拌器,一面攪拌所得溶液,一面藉 由加熱套使其於80°C下反應3小時。其次,使用蒸發器, 於2000 pa之壓力、4(TC及1小時之條件下,將與水之縮合 反應所生成之甲醇及殘留水去除。其後,放置燒瓶直至達 到室溫為止,獲得含有矽氧烷聚合物22之溶液。所得之含 有矽氧烷聚合物22之溶液之固形物濃度為70重量。/〇。 (矽氧烷聚合物23~37及44〜46) 如下述表7〜10所示來變更烷氧基矽烷之種類及調配量, 137746.doc -57- 200937123 除此以外’以與矽氧烷聚合物22相同之方式獲得含有梦氧 炫聚合物23~37及44〜46之溶液。所得之含有發氧烧聚合物 23〜37及44~46之溶液之固形物濃度為70重量0/〇。 (矽氧烷聚合物38) 於安裝有冷凝管之100 ml燒瓶中,加入39 mol曱基三甲 氧基梦烧、40 mol二曱基甲氧基梦烧、1 mol之3-(三甲氧 基矽烷基)丙基琥珀酸酐三曱氧基矽烷(信越化學工業公司 製造,X12-967)、5 mol之3-甲基丙烯醯氧基丙基三甲氧基 矽烷、15 mol之2-(3,4-環氧環己基)乙基三甲氧基矽烷、15 ml水、1,5 mol氫氧化鉀、及20 ml丙二醇單甲醚乙酸醋, 獲得溶液。 使用半圓型之機械攪拌器,一面攪拌所得溶液一面藉由 加熱套使其於80 °C下反應3小時。其後,加入乙酸直至溶 液成為中性為止,接著’使用蒸發器,於2〇〇〇 Pa之壓 力、40°C及1小時之條件下’將與水之縮合反應所生成之 曱醇及殘留水去除。之後,放置燒瓶直至達到室溫為止, 並對所生成之鹽進行過濾’由此獲得含有矽氧烷聚合物38 之溶液。所得之含有矽氧烷聚合物38之溶液之固形物濃度 為70重量%。 (矽氧烷聚合物39〜43及47~53) 如下述表9、10所示來變更烷氧基矽烷之種類及調配 量’除此以外,以與矽氧烷聚合物38相同之方式,獲得含 有石夕氧烧聚合物39〜43及47~53之溶液。所得之含有石夕氧烧 聚合物39〜43及47〜53之溶液之固形物濃度為7〇重量〇/0。 137746.doc •58· 200937123 所得矽氧烷聚合物22~53之詳細情示於下述表7〜 下述表7〜10中,表示用於合成矽氧烷聚合物之 (1)所表示的石夕烧化合物總計100 mol%中的、上述式(^戶 表示且上述式(1)中之p為2的矽烷化合物之比例。又,使用 凝膠滲透層析儀對所得矽氧烷聚合物22〜53測定之聚笨乙 烯換算重量平均分子量Mw示於下述表7〜10。進而,所得 石夕氧烧聚合物22〜53之在矽原子上直接鍵結有碳原子之有 機基100%中的具有不飽和雙鍵之有機基的比例、具有酸 ® 針基或叛基之有機基的比例、以及具有環狀醚基之有機基 的比例示於下述表7〜1〇。 ❹ 137746.doc -59- 200937123Manufacture, X12-967), 3· mercapto propylene oxide oxypropyl trimethoxy sulphur, 3-mercapto propylene methoxy propyl methyl decyl oxy decane, propylene methoxy propyl three曱oxydecane, 3·vinyloxypropyltrimethoxydecane, 3′glycidoxypropyltrimethoxy ketone, 3•glycidoxypropylmethyldimethoxy oxime&, 2- (3,4-epoxycyclohexyl)ethyl " at least one of methoxy decane. (Hexane polymer 22) In a 100 ml flask equipped with a condenser, 15 guanidine methyltrimethoxy was added.矽, 5 mol of tris(trimethoxydecyl)propyl succinic anhydride trimethoxy decane (manufactured by Shin-Etsu Chemical Co., Ltd., Χ12·967), 8〇m〇i23_ methacryloxypropylmethyl group A solution was obtained by using a decyloxydecane, 15 ml of water, and 2 ml of propylene glycol monomethyl ether acetate. The solution was stirred while stirring at 80 ° C using a semi-circular mechanical stirrer while stirring the solution. 3 hours. Secondly, using an evaporator, methanol and residuals formed by condensation reaction with water at a pressure of 2000 Pa, 4 (TC and 1 hour) The water was removed. Thereafter, the flask was placed until it reached room temperature, and a solution containing the siloxane polymer 22 was obtained. The solid solution concentration of the obtained solution containing the siloxane polymer 22 was 70% by weight. Alkyl polymer 23~37 and 44~46) The type and amount of alkoxy decane are changed as shown in the following Tables 7 to 10, 137746.doc -57- 200937123 Other than 'with a siloxane polymer 22 A solution containing Dream Oxygen Polymers 23 to 37 and 44 to 46 was obtained in the same manner, and the obtained solid solution containing the oxy-fired polymers 23 to 37 and 44 to 46 had a solid concentration of 70 wt%/〇. Oxyalkane polymer 38) In a 100 ml flask equipped with a condenser, add 39 mol of decyltrimethoxymethane, 40 mol of dimethyl methoxymethyl, 1 mol of 3-(trimethoxydecyl) ) propyl succinic anhydride trimethoxy decane (manufactured by Shin-Etsu Chemical Co., Ltd., X12-967), 5 mol of 3-methylpropenyloxypropyltrimethoxydecane, 15 mol of 2-(3,4- Epoxycyclohexyl)ethyltrimethoxydecane, 15 ml of water, 1,5 mol of potassium hydroxide, and 20 ml of propylene glycol monomethyl ether acetate, to obtain a solution Using a semi-circular mechanical stirrer, the resulting solution was stirred while heating at 80 ° C for 3 hours. Then, acetic acid was added until the solution became neutral, followed by 'using an evaporator at 2 〇. The pressure of 〇〇Pa, 40 ° C and 1 hour, the sterol and residual water formed by the condensation reaction with water were removed. After that, the flask was placed until it reached room temperature, and the salt formed was filtered. 'The solution containing the siloxane polymer 38 is thus obtained. The resulting solution containing the siloxane polymer 38 had a solid concentration of 70% by weight. (Neteroxane polymers 39 to 43 and 47 to 53) The same as the azeoxane polymer 38, except that the type and the amount of the alkoxydecane are changed as shown in the following Tables 9 and 10. A solution containing the arsine-oxygenated polymers 39 to 43 and 47 to 53 was obtained. The solid solution concentration of the obtained solution containing the agglomerated oxygen polymers 39 to 43 and 47 to 53 was 7 〇 〇 /0. 137746.doc •58· 200937123 The details of the obtained oxoxane polymers 22 to 53 are shown in the following Table 7 to Tables 7 to 10 below, which are represented by (1) for synthesizing a siloxane polymer. The ratio of the decane compound represented by the above formula (the formula of (1) and p of 2 in the above formula (1) in a total of 100 mol% of the compound of the ceramsite compound. Further, the obtained oxirane polymer is obtained by gel permeation chromatography. The polystyrene-equivalent weight average molecular weight Mw measured at 22 to 53 is shown in the following Tables 7 to 10. Further, the obtained anthracene oxygen-fired polymer 22 to 53 is directly bonded to the organic group having a carbon atom at a halogen atom. The ratio of the organic group having an unsaturated double bond, the ratio of the organic group having an acid group or a thio group, and the ratio of the organic group having a cyclic ether group are shown in the following Tables 7 to 1 〇. .doc -59- 200937123

卜寸 0寸 οι oor—(Ιο ο寸 01 〇 srn卜寸 0 inch οι oor—(Ιο ο寸 01 〇 srn

SCN 0寸 i寸 ο寸 0寸SCN 0 inch i inch ο inch 0 inch

SCS 〇 01 οε 09 οε oooolo 09 οε 0 〇 09 09 01 οε οοίΝε 09 οε 01 〇 01 οε οοοοε 09 οε 01 〇 01 01 00CN寸 09 οι 01 〇SCS 〇 01 οε 09 οε oooolo 09 οε 0 〇 09 09 01 οε οοίΝε 09 οε 01 〇 01 οε οοοοε 09 οε 01 〇 01 01 00CN inch 09 οι 01 〇

m (S <N <N 08m (S <N <N 08

SI 01 01 ooi 01 οι 01 〇 08SI 01 01 ooi 01 οι 01 〇 08

I 08 000 〇 【卜嵴】 (10 日)¾^蝴«f&-M 砩¢- (IO 日)域备硝^s-u^®-'i (10日)^备硪碱®-Mfe翹眾镩砩肊(f域备砩«if®-M)-£ (0日)^备硪^&-4 砩«蝴碱滷发v?^s--eI 08 000 〇【卜嵴】(10th)3⁄4^蝴蝶«f&-M 砩¢- (IO day) domain preparation nitrate ^su^®-'i (10th) ^ 硪 硪 - - - - -镩砩肊(f domain preparation «if®-M)-£ (0 days)^备硪^&-4 砩«蝶碱卤发v?^s--e

(IO日)^^砩^&--^硪&-砩^硪碱键t-ve^is-A (10111)¾备-feiiB-wfc'f^lg^fe *# (ο日)越铪砩碱®-Μ^¢硪碱装*0-£ (I0UI)^^4^»-M 硝ve蝴碱谀>·^猓-ε (oul)^^-f^ifi--r-f»-^«-f^-Β,ΐ^壊,e (Ms)ttN屮φ^^ί侧 寸※(%)f#^w^^^tf 苳^s硝«杯w硪I¾ί¾f杯^c忘ψ%ool砩赛杷w屮¢?够¼珑黎璁ττ屮噼¾'蛘寸※ ίίϊ忘硇奪钾w蝴魏礤硪右毽杷砵装+。/。001砩奪杷w屮哟嚤你垅黎璁MT屮噼给蛘(^※ 『#玉宕硪鸾钾W黎鈉卷遨K-杷4«ψ %〇〇 一硪奪杷W屮噼^杯垅黎雄:I:T屮¢?龟蛘¢N※ 5 ^ W ^ ^5 ^ 忘 ν-θ-( 一 )^-τ'κ:^^( 一 )^,s-e-%o日 ο 〇 一犮絮荽φ^^-^ν 长<茫(0VW 蓉命鉍域^^噠^食阳一 ※ 137746.doc -60- 200937123 【00<】 09 0寸 oootNro 09 0寸 0 Ό m f〇 m π寸 01 0寸 00000寸(IO day) ^^砩^&--^硪&-砩^硪 base key t-ve^is-A (10111)3⁄4备-feiiB-wfc'f^lg^fe *# (ο日)铪砩 铪砩 ® Μ * 0 0 0 0 I I I I I I I I I ε ε ε ε ε ε ε ε ε ε ε ε ε ε ε ε ε ε ε ε ε ε ε ε ε ε ε ε ε ε ε ε ε ε ε ε »-^«-f^-Β,ΐ^壊,e (Ms)ttN屮φ^^ί side inch ※(%)f#^w^^^tf 苳^s nitrate «cup w硪I3⁄4ί3⁄4f cup^c forgot ψ%ool砩赛杷w屮¢? Enough 1⁄4珑黎璁ττ屮噼3⁄4'蛘寸 ※ ίίϊ 硇 钾 钾 w w w 礤硪 礤硪 礤硪 礤硪 礤硪 。 。 。 。 。 /. 001 砩 杷 屮哟嚤 屮哟嚤 屮哟嚤 屮哟嚤 垅 璁 璁 璁 屮噼 屮噼 ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^垅黎雄: I:T屮¢?龟蛘¢N※ 5 ^ W ^ ^5 ^ Forget ν-θ-(一)^-τ'κ:^^(一)^,se-%o日ο 〇一犮犮荽φ^^-^ν长<茫(0VW 蓉命铋域^^哒^食阳一※ 137746.doc -60- 200937123 [00<] 09 0 inch oootNro 09 0 inch 0 Ό mf〇 m π inch 01 0 inch 00000 inch

S 0寸 01 〇 8Ζ. ιηε 61S 0 inch 01 〇 8Ζ. ιηε 61

6S τ o寸 ιηε (ο日)^备砩碱ffi-M 砩&-Μ 016S τ o inch ιηε (ο日) ^ 砩 base ffi-M 砩 &-Μ 01

0(N0 (N

0CN 01 01 0006寸 τ 01 01 0 0寸 0寸 is0CN 01 01 0006 inch τ 01 01 0 0 inch 0 inch is

001S 〇寸 08001S 〇 inch 08

0CN 0 〇寸0CN 0 〇 inch

SS

0CN 0 0寸0CN 0 0 inch

0S (ο日)^^^«f®-wf«硪碱键爱¢fBl--ε 0寸 i寸 i寸 〇寸 〇寸 0寸 ooeln 〇寸 (1|)^^4^&-"硪»-砩哫砩碱键发肊_»--£ (Ιο日)¾备'f®f®-T^叱蝴碱锺裝肊-e 十5 (10旦^^^碱®-⑴硪«:硪赫爱9 -e (IOUI)^^f u®-4¢-fsl—rn (o日)¾:备砩^s--r 砩B-f 肊砩赫谀>^墚-Γο (10日)域灸4^6-4蝴0(^:0蛘碱蛘-52 一※(%os)f#^w#^qf^^stsl嫦α, 08 06 0Ϊ «^※(%)ft «硪€杷硪45镏你>* 0 0 0 【#玉忘硪麥杷w^^^獾K-你<*^ψ。/。00 一砩奪杯w屮噼赞杷垅黎雄1:T屮噼-^-^2:※ (N嫦CL,w-a-(l)^T 长嵴友(一 )<书,忘ψ%Ιοβ 001 犮璨#φ^^^ν'κ:^^( 一) W#φ鉍盔碱备嗜Φ食w一※ 137746.doc -61 - 200937123 ❹0S (ο日)^^^«f®-wf«硪碱键爱¢fBl--ε 0 inch i inch i inch inch inch inch inch 0 inch ooeln inch inch (1|)^^4^&-&quot ;硪»-砩哫砩基键发发肊_»--£ (Ιο日)3⁄4备'f®f®-T^叱果碱锺-e 十5 (10旦^^^ alkali®-(1)硪«:硪赫爱9 -e (IOUI)^^fu®-4¢-fsl-rn (o day)3⁄4: 砩^s--r 砩Bf 肊砩赫谀>^墚-Γο (10 Day) Domain Moxibustion 4^6-4 Butterfly 0 (^: 0 蛘 蛘 52 -52 一 ※ (% os) f#^w#^qf^^stsl嫦α, 08 06 0Ϊ «^※(%)ft «硪€杷硪45镏你>* 0 0 0 【#玉忘硪麦杷w^^^獾K-你<*^ψ./.00 一砩杯#屮噼屮噼杷垅黎雄1:T屮噼-^-^2:※ (N嫦CL, wa-(l)^T 长嵴友(一)<Book, Forgot ψ%Ιοβ 001 犮璨#φ^^^ν'κ:^^( a) W#φ 铋 碱 碱 备 备 Φ ※ 一 ※ ※ 137746.doc -61 - 200937123 ❹

)I 08 006 06 08 0 0寸 01 01 0寸 000寸 0 0寸 01 0 0寸 0寸) I 08 006 06 08 0 0 inch 01 01 0 inch 000 inch 0 0 inch 01 0 0 inch 0 inch

0Z 00181 001 0寸 00Z 00181 001 0 inch 0

0CS0CS

SI 000S 寸 0寸 01SI 000S inch 0 inch 01

SISI

r-H Ο Ό\ m οο m 〇\ m (10旦域备硪^®-M砩&-r-H Ο Ό\ m οο m 〇\ m (10 旦域备硪^®-M砩&-

0CN0CN

6L 006ε6L 006ε

6L6L

6L6L

0CN ο寸 ο寸 ο寸 (0日)袈备蝴碱Β-Μ砩δ-Μ 03 0寸0CN ο inch ο inch ο inch (0 days) 蝴备蝴碱Β-Μ砩δ-Μ 03 0 inch

SI >01SI >01

SI i寸 oofs寸 008寸 0寸 08 0寸SI i inch oofs inch 008 inch 0 inch 08 0 inch

S 0寸S 0 inch

otNotN

SISI

SISI

SISI

(1|)域备硪^Bi-Mfe毽眾每 fVErsi^^f^fi-MK (10111)¾备砩碱9--^硪肊硪«?锺爱肊砩5--£(1|) Domain preparation 硪^Bi-Mfe 毽众 every fVErsi^^f^fi-MK (10111)3⁄4 砩 砩 9--^硪肊硪«?锺爱肊砩5--£

(10 日)^^^«f6-M 砩B-砩肊 f 肊^fr-CA (1|)^^硪碱6-^砩肊砩祐^to-e (10 日)^i?srt^&-川砩《 砩碱谀>·^缓-ε (ο日)¾备硪碱8i-M^10cftofi^lE4d:-z (Ms)«tttf令贫牛峒麵 一※(%los)f4qlw#^qK^^sCN_d »^)※(%)军玉客^赛杯^砩45潜他吨 军玉忘^奪杯w^f^fi杷蛛忘-δ-0/ooo 1硪奪杷W屮噼够杷垅黎璁:ττ屮噼铪蛘寸※ 冢^銮硇¾ltew硇魏嘁砩fe毽杷砵忘-fr-。/。00l砩奪杯w屮噼赞¼垅黎邾例τ屮«5?备婵ε※ 冢^«砩赛¼w黎^>¾-獾κ-¼^c銮-B-。/。ooϊ硪赛杯w屮噼窜杷垅黎邾l:τ屮¢?灸蛘Γ^^※ «CN嫦o-w-5-( 一 )<-T'lT<r( I )β, « ψ。/0〇日 ο ο Ι*Γ璨荽Φ^域龟:^长^茫(一 袭<°鉍越碱势^φ奂 Κ一※ 137746.doc -62- 200937123 οε ο— 001 oe ο 09 οε ooss 09 06 09 000寸 09 vn 0寸 s 00— 0寸(10th)^^^«f6-M 砩B-砩肊f 肊^fr-CA (1|)^^硪 alkali 6-^砩肊砩you^to-e (10 days)^i?srt^ &-川砩" 砩 谀 谀 · · ε ε ε ε ο ο ε ε ε ε ε ε ε 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 4 K ^ ^ ^屮噼 杷垅 杷垅 璁 τ: ττ屮噼铪蛘 inch ※ 冢 ^ 銮硇 3⁄4ltew 硇 Wei 嘁砩 fe forget - fr-. /. 00l 砩 杯 cup w屮噼 praise 1⁄4 垅 邾 邾 屮 屮 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 砩 砩 砩 砩 砩 砩 砩 砩 砩 砩 砩 砩 砩 砩 砩 砩 砩 砩 砩 砩 砩 砩 砩 砩/. Ooϊ硪赛杯 w屮噼窜杷垅黎邾l:τ屮¢?灸蛘Γ^^※ «CN嫦o-w-5-(一 )<-T'lT<r( I )β, « ψ. /0〇日ο ο Ι*Γ璨荽Φ^ Domain turtle: ^长^茫(一袭<°铋越碱 potential^φ奂Κ一 ※ 137746.doc -62- 200937123 οε ο— 001 oe ο 09 Εε ooss 09 06 09 000 inch 09 vn 0 inch s 00-0 inch

In a; 01 s寸 0寸 0§ 01 0寸 006 >n6 09 〇 οε 00000l 0 οε o 03 0000卜 τIn a; 01 s inch 0 inch 0§ 01 0 inch 006 >n6 09 〇 οε 00000l 0 οε o 03 0000b τ

OCN ο •ON荽Φ鉍域碱备 011硌】 (10 日)^备砩^&-4砩»- (οε)^备 f^»-·^ 砩®-·=* (10日δ 备砩£45^喜ve砩®-_ε (10目)^备砩碱56-^-砩®-砩肊砩碱嫿爱肊砩s--ε (IOS)^^^«is-wf 肊蝴碱饍爱肊-ε $ (o日)¾:备4«iffi--r砩《硪碱谀和爷壊-e (Ιο日)^^f^®-M^B-f « 砩碱谀>·^缓-e (Ιο日)^^_^&-Μ 砩ο(ΫΓΟ1Ε^ϊί-寸ώΑ 一※(%og)f_i5w#^ql^^scs^d «^※(%)f#q.u«砩奪杯靛嘁砩右镏体<OCN ο • ON荽 Φ 碱 碱 碱 硌 硌 ( ( ( ( & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & 45£45^喜 ve砩®-_ε (10 mesh) ^ 砩 56 56 56-^-砩®- 砩肊砩 婳 婳 肊砩 肊砩 - IOS IOS IOS IOS IOS IOS IOS IOS IOS IOS IOS IOS IOS IOS IOS IOS IOS IOS IOS IOS w肊爱肊-ε $ (o day) 3⁄4: prepared 4«iffi--r砩 "硪 谀 谀 and 壊 壊 -e (Ιο日) ^^f^®-M^Bf « 砩 谀 谀 · · ·缓-e (Ιο日)^^_^&-Μ 砩ο(ΫΓΟ1Ε^ϊί-inchώΑ a ※(%og)f_i5w#^ql^^scs^d «^※(%)f#qu«砩Win the cup, right body <

寸※(roK^^w^il^lE f#q1«砩赛你^•硪篇荽蛘枇^忘屮^芑一砩輩杷^屮噼够杷龙黎璁一:一-屮噼^蛘寸※ 革壬宕蝴赛杯》硪癍嘁硪右翹杷4«-5-。/。001硪赛杯W屮噼够杷垅黎璁例T屮噼泠^ε※ f#q.u忘砩鸾杯W^^vg-^K·枇4客+%001砩奪杯^屮噼镩杷垅敛璁一:一-屮噼备蛘^※ f#^w 荽<0^域备 SZ 礞 d >-&-( 一 )βΜ长硌茫(I )<,菠-&-%os 〇〇 14*璨#Φ^^^>长硌^( 荽伞鉍^念^一 ※ 137746.doc -63- 200937123 (丙烯酸系樹脂) 丙烯酸系樹脂(新中村化學工業公司製造,商品名 「MSP-5969」) (環氧樹脂) 環氧矽氧烷(信越化學工業公司製造,r KF-101」) • 氫化雙盼A型環氧樹脂(日本環氧樹脂公司製造、商品名 「YX8000」) 脂環式環氧樹脂(Daisel化學工業公司製造,商品名 ❹ 「Celloxide 2021Ρ」) 異三聚氰酸環氧樹脂(日產化學公司製造,商品名 「TEPIC-SP」) 雙酌' A型環氧樹脂(日本環氧樹脂公司製造,商品名 「828」) (聚合起始劑) 光5^合起始劑(光自由基產生劑,日本§iberuhegner公司 ❹ 製造,商品名「TPO」) (白色填料) 一氧化鈦(石原產業公司製造,商品名r CR_97」) (實施例34) 調配100重量份之矽氧烷聚合物22、2〇重量份之光聚合 起始劑(光自由基產生劑,日本Siberuhegner&司製造,商 叩名「TPO」)、及300重量份之二氧化鈦(石原產業公司製 造、商品名「CR-97」),用攪拌機混合2分鐘之後,利用 三輥研磨機來進行混合。其後,使用脫泡攪拌太郎sp_ 137746.doc 200937123 5〇〇(Thinky公司製造)對混合物進行3分鐘消泡,藉此獲得 抗蝕劑材料。 (實施例35〜74及比較例5〜8) 如下述表11〜17所示來變更所使用之材料,除此以外, 以與實施例34相同之方式獲得抗蝕劑材料。 (評價) (1) 初期反射率 準備大小為80 mmx90 mm、且厚度為1.〇 min之玻璃基 板。藉由網版印刷法’使用100網目聚酯斜張網布製版將 所得抗蝕劑材料以β圖案而印刷於該玻璃基板上β其後, 於80°C之熱風烘箱内乾燥20分鐘。 其次’使用紫外線照射裝置(ORC製作所公司製造, HMW-680GX),以使照射能量達到6〇〇 mJ/cm2之方式,以 50 mW/Cm2之紫外線照度來照射12秒鐘之波長為365 11111的 紫外線。 接著,將30°C之1重量。碳酸鈉水溶液作為顯影液,利 用印刷電路板用顯影機進行9〇秒鐘之顯影,接著於1 之熱風烘箱内乾燥60分鐘,獲得膜厚為2〇 μπΐ2評價樣 品° 使用分光光度計(島津製作所公司製造,商品名 「UVPC-3101C」)測定所得評價樣品之初期反射率。 (2) 耐光色調變化及耐光反射率變化 使用紫外線照射裝置(USHI〇t機公司製造,Sp〇t Cure SP-5) ’以使照射能量達到1〇〇 J/cm2之方式,以2〇〇 137746.doc 65 200937123 mWW之紫外線照度對上述⑴初期反射率中獲得 樣品照射500秒鐘之波長為365 nm的紫外線。 使用色彩色差計(Konica Minolta公司傲、生 J聚,商品名 「CR-400」)測定光照射前之評價樣品之y^ 又’測定光照射後之評價樣品之L*、a*、 b ,並根據該等 兩個測定值來求出AE*ab。當熱處理後之評價樣〇之 △E*ab未滿丨時評價為「〇」,當為1>5以上且未滿2時=Inch ※(roK^^w^il^lE f#q1«砩赛^^硪篇荽蛘枇^ Forget 屮^芑一砩 杷^屮噼 enough 杷龙黎璁一:一-屮噼^蛘Inch ※ 壬宕 壬宕 赛 赛 赛 硪癍嘁硪 硪癍嘁硪 « « « « « « « « « « « « « « « « « « « « « « « « « « « « « « « « « Cup W^^vg-^K·枇4 guest+%001 cupping cup^屮噼镩杷垅convenient one: one-屮噼备蛘^※ f#^w 荽<0^ domain preparation SZ 礞d >-&-(a) βΜ长硌茫(I )<, 菠-&-%os 〇〇14*璨#Φ^^^>长硌^(荽伞铋^念^一※ 137746. Doc -63- 200937123 (Acrylic resin) Acrylic resin (manufactured by Shin-Nakamura Chemical Co., Ltd., trade name "MSP-5969") (Epoxy resin) Epoxy oxirane (manufactured by Shin-Etsu Chemical Co., Ltd., r KF-101 ” • Hydrogenated double-prepared A-type epoxy resin (manufactured by Nippon Epoxy Co., Ltd., trade name “YX8000”) alicyclic epoxy resin (manufactured by Daisel Chemical Industry Co., Ltd., trade name “Celloxide 2021Ρ”) isocyanide Acid epoxy resin (manufactured by Nissan Chemical Co., Ltd., trade name "TEPIC-SP") Double-decreasing 'A type epoxy resin (Japan epoxy Manufactured by the company, trade name "828") (polymerization initiator) Light 5^ starter (photo-free radical generator, manufactured by Japan §iberuhegner Co., Ltd., trade name "TPO") (white filler) Titanium oxide (manufactured by Ishihara Sangyo Co., Ltd., trade name r CR_97) (Example 34) 100 parts by weight of a siloxane polymer 22, 2 parts by weight of a photopolymerization initiator (photoradical generator, Siberuhegner & Manufactured under the name "TPO", and 300 parts by weight of titanium dioxide (manufactured by Ishihara Sangyo Co., Ltd., trade name "CR-97"), mixed with a stirrer for 2 minutes, and then mixed by a three-roll mill. The mixture was subjected to defoaming for 3 minutes using a defoaming stirring Taro sp_137746.doc 200937123 5〇〇 (manufactured by Thinky Co., Ltd.), thereby obtaining a resist material. (Examples 35 to 74 and Comparative Examples 5 to 8) A resist material was obtained in the same manner as in Example 34 except that the materials used were changed as shown in FIGS. 11 to 17. (Evaluation) (1) The initial reflectance preparation size was 80 mm x 90 mm, and the thickness was 1 .〇min glass base The obtained resist material was printed on the glass substrate in a β pattern by screen printing method using a 100 mesh polyester oblique screen cloth, and then dried in a hot air oven at 80 ° C for 20 minutes. Next, 'Ultraviolet irradiation apparatus (HMW-680GX, manufactured by ORC Co., Ltd.) was used to irradiate the ultraviolet illuminance of 50 mW/cm2 for 12 seconds to 365 11111 in such a manner that the irradiation energy reached 6 〇〇mJ/cm2. UV rays. Next, weigh 1 of 30 °C. The sodium carbonate aqueous solution was used as a developing solution for 9 seconds in a developing machine using a printed circuit board, and then dried in a hot air oven for 1 minute for 60 minutes to obtain a sample having a film thickness of 2 〇μπΐ2. Using a spectrophotometer (Shimadzu Corporation) The initial reflectance of the obtained evaluation sample was measured by the company's manufacture, trade name "UVPC-3101C". (2) The light-resistant color change and the light-resistant reflectance change are performed by using an ultraviolet irradiation device (Sp〇t Cure SP-5, manufactured by USHI〇T, Inc.) to make the irradiation energy reach 1〇〇J/cm2. 137746.doc 65 200937123 Ultraviolet illuminance of mWW The ultraviolet ray having a wavelength of 365 nm was obtained by irradiating the sample for 500 seconds in the initial reflectance of the above (1). Using a color difference meter (Konica Minolta Co., Ltd., product name "CR-400") to measure the y^ of the evaluation sample before light irradiation, and 'measuring L*, a*, b of the evaluation sample after light irradiation, Based on these two measured values, AE*ab is obtained. When the evaluation sample 热处理E*ab is not full after heat treatment, it is evaluated as "〇", when it is 1 > 5 or more and less than 2 =

為「△」,當為2以上時評價為「χ」,評價結果示於下述 表11〜17 。 進而,使用分光光度計(島津製作所公司製造,商品名 「UVPC-3101C」)測定光照射後之評價樣品之反射率。當 光照射後之評價樣品之反射率與光照射前之評價樣品之初 期反射率相比所產生的變化(減少值)未滿〇. 5 %時評價為 「〇」,當為0.5%以上且未滿2%時評價為「△」,當為 以上時評價為「X」,評價結果示於下述表11〜17。 (3)财熱色調變化及耐熱反射率變化 將上述(1)初期反射率中獲得之評價樣品於27〇它下放置 5分鐘’藉此進行熱處理。 使用色彩色差計(K〇nica Min〇lta &司製造,商品名 「CR-400」)測定熱處理前之評價樣品之L*、0 n 又,測定熱處理後之評價樣品之。、a*、b*,並根據該等 兩個測疋值來求出ΔΕ*&1)。當熱處理後之評價樣品之 △E*ab未滿1時評價為「〇」,當為i.5以上且未滿2時評價 為「△」,當為2以上時評價為「χ」,評價結果示於下述 137746.doc -66 - 200937123 表11〜17。 進而,使用分光光度計(島津製作所公司製造,商品名 「UVPC-3101C」測定熱處理後之評價樣品之反射率。當 熱處理後之評價樣品之反射率與熱處理前之評價樣品之初 期反射率相比所產生的變化(減少值)未滿〇5%時評價為 「〇」,當為0.5%以上且未滿2。/。時評價為「△」,當為2% 以上時評價為「X」’評價結果示於下述表丨丨〜丨7。 (4) 黏性 & 於基板上塗佈所得抗蝕劑材料之後,於8〇<»c之熱風烘箱 内乾燥20分鐘,於基板上獲得評價樣品。用手指用力按壓 所得基板上之評價樣品’藉此根據下述評價基準來判定黏 性。 [黏性之評價基準] 〇:不發黏 △:略微發黏 X :明顯發黏 (5) 顯影性之評價 準備上表面上形成有厚度為40 μιη之銅電路、大小為 mmx90 mm、且厚度為1.0 mm之印刷電路板。藉由網版印 刷法,使用100網目之聚酯斜張網布製版將所得抗兹劑材 料以β圖案而印刷於該印刷電路板之上表面上。其後,於 8〇°C之熱風烘箱内乾燥20分鐘。 其次’介隔具有特定圊案之光罩,以塗膜具有曝光部及 未曝光部之方式,使用紫外線照射裝置(ORC製作所公司 137746.doc -67· 200937123 製造,HMW-680GX),以使照射能量達到600 mJ/cm2之方 式以50 mW/cm2之紫外線照度對塗膜局部地照射12秒鐘之 波長為365 nm的紫外線。 其後,將30°C之1重量°/〇碳酸鈉水溶液作為顯影液,利 用印刷電路板用顯影機於0.2 MPa下進行90秒鐘之顯影, ' 接著於150°C之熱風烘箱内乾燥60分鐘,獲得膜厚為20 μιη 之評價樣品。 獲得上述抗蝕膜時,使用電子顯微鏡來觀察顯影後是否 β 形成了圖案,藉此根據下述評價基準來評價顯影性。 [顯影性之評價基準] 〇:形成了 L/S 100 μιη之圖案 △:形成了 L/S 100 μηι之圖案,但圖案之長度方向尺寸存 在10%以上之不均一 X :未形成L/S 100 μιη之圖案 (6)财回焊性 使上述(5)顯影性之評價中獲得之抗蚀膜連同印刷電路 板通過回焊爐(預熱150°C X 100秒+回焊[最高溫度260°C ])3 次。 ‘其後,觀察是否產生抗蝕膜之剝離或抗蝕膜之龜裂,藉 此根據下述評價基準來評價耐熱剝離或龜裂性。 [耐熱剝離或龜裂性之評價基準] 〇:無抗蝕膜之剝離或抗蝕膜之龜裂 △:略微可見抗蝕膜之剝離或抗蝕膜之龜裂 X :整個表面可見抗蝕膜之剝離或抗蝕膜之龜裂 137746.doc -68 - 200937123 又,對所得評價樣品評價抗蝕獏對基板之密著性。 依據JIS K 5400,使用切割機以俯視時大小為i mmxl mm之方式來切斷抗蚀膜’將抗姓膜分割為個。於分割 後之抗蝕膜上貼附膠帶之後,剝離膠帶,藉此根據下述評 價基準來評價密著性。 [耐熱黏著性之評價基準] 〇:分割後之抗蝕膜100個中,未剝離之抗蝕膜為i 00個 △:分割後之抗蝕膜100個中’未剝離之抗蝕膜為80個〜99個 ® X :分割後之抗蝕膜100個中,未剝離之抗蝕膜為〇個〜79個 (7)電絕緣性 使用IPC B-25測試圖案之梳形電極B試樣來代替印刷電 路板,除此以外,於與上述(5)顯影性之評價相同之條件下 獲得評價樣品。對該評價樣品施加DC500 V之偏壓,測定 洩漏電流。又,根據洩漏電流之測定值,按照下述評價基 準來評價電絕緣性。 _ [電絕緣性之評價基準] ◎:洩漏電流未滿1.0x10-6 A/cm2 〇:洩漏電流為1.0x10-6 A/cm2以上、且未滿1.5x10-6 A/cm2 △:洩漏電流為1.5x10-6 A/cm2以上、且未滿2.0x10-6 A/cm2 X :洩漏電流為2.OxlO-6 A/cm2以上 結果示於下述表11〜17 » 137746.doc -69- 200937123 [表 11]When it is "△", it is evaluated as "χ" when it is 2 or more, and the evaluation results are shown in the following Tables 11 to 17. Further, the reflectance of the evaluation sample after the light irradiation was measured using a spectrophotometer (manufactured by Shimadzu Corporation, trade name "UVPC-3101C"). When the reflectance of the evaluation sample after light irradiation is lower than the initial reflectance of the evaluation sample before light irradiation, the change (decrease value) is less than 5%. When it is 5 %, it is evaluated as "〇", and when it is 0.5% or more When it was less than 2%, it was evaluated as "△", and when it was the above, it was evaluated as "X", and the evaluation results are shown in Tables 11 to 17 below. (3) Change in color tone and change in heat-resistant reflectance The evaluation sample obtained in the above (1) initial reflectance was placed under 27 Torr for 5 minutes to heat-treat. L* and 0 n of the evaluation sample before heat treatment were measured using a color difference meter (manufactured by K〇nica Min〇lta & Division, trade name "CR-400"), and the evaluation sample after the heat treatment was measured. , a*, b*, and find ΔΕ*&1) based on the two measured values. When ΔE*ab of the evaluation sample after heat treatment was less than 1, it was evaluated as “〇”, and when it was i.5 or more and less than 2, it was evaluated as “Δ”, and when it was 2 or more, it was evaluated as “χ”, and evaluation was evaluated as “χ”. The results are shown in the following Tables 13 to 17 of 137746.doc -66 - 200937123. Further, the reflectance of the evaluation sample after the heat treatment was measured using a spectrophotometer (manufactured by Shimadzu Corporation, trade name "UVPC-3101C". The reflectance of the evaluation sample after the heat treatment was compared with the initial reflectance of the evaluation sample before the heat treatment. When the change (reduction value) is less than 5%, it is evaluated as "〇", and when it is 0.5% or more and less than 2%, it is evaluated as "△", and when it is 2% or more, it is evaluated as "X". 'Evaluation results are shown in the following Table 丨~丨7. (4) Viscosity & After applying the obtained resist material on the substrate, it was dried in a hot air oven at 8 °<»c for 20 minutes on the substrate. The evaluation sample was obtained by pressing the evaluation sample on the obtained substrate with a finger. The viscosity was determined according to the following evaluation criteria. [Evaluation criteria of viscosity] 〇: no stickiness △: slightly sticky X: markedly sticky (5) Evaluation of developability A printed circuit board having a copper circuit having a thickness of 40 μm, a size of mm×90 mm, and a thickness of 1.0 mm was formed on the upper surface. By screen printing method, a polyester mesh of 100 mesh was used. Mesh-making plate The material is printed on the upper surface of the printed circuit board in a β pattern, and then dried in a hot air oven at 8 ° C for 20 minutes. Secondly, the mask is provided with a specific mask to expose the coating film. And the method of the unexposed portion, using an ultraviolet irradiation device (manufactured by ORC Co., Ltd., 137746.doc -67·200937123, HMW-680GX), so that the irradiation energy reaches 600 mJ/cm2, and the ultraviolet illuminance is applied at 50 mW/cm2. The film was partially irradiated with ultraviolet rays having a wavelength of 365 nm for 12 seconds. Thereafter, a weight of 30 ° C of a weight / 〇 sodium carbonate aqueous solution was used as a developing solution, and a developing machine for a printed circuit board was used at 0.2 MPa for 90 seconds. Development, 'then dried in a hot air oven at 150 ° C for 60 minutes to obtain an evaluation sample having a film thickness of 20 μm. When the above resist film was obtained, an electron microscope was used to observe whether or not β was patterned after development, thereby The developability was evaluated by the following evaluation criteria. [Evaluation criteria for developability] 〇: Pattern of L/S 100 μm was formed Δ: A pattern of L/S 100 μη was formed, but the length dimension of the pattern was 10% or more. Do not One X: L/S 100 μm pattern was not formed (6) Reflowability The resist film obtained in the evaluation of the above (5) developability was passed through a reflow furnace together with a printed circuit board (preheating 150 ° C X for 100 seconds) +Reflow soldering [maximum temperature: 260 ° C] 3 times. ' Thereafter, whether or not peeling of the resist film or cracking of the resist film occurred was observed, whereby the heat-resistant peeling or cracking property was evaluated according to the following evaluation criteria. [Evaluation criteria for heat-resistant peeling or cracking] 〇: peeling of resist film or crack of resist film △: peeling of resist film or crack of resist film X: visible resist film on the entire surface Peeling or cracking of the resist film 137746.doc -68 - 200937123 Further, the obtained evaluation sample was evaluated for the adhesion of the resist to the substrate. According to JIS K 5400, the resist film was cut by using a cutter in a size of i mm x 1 mm in a plan view. After the tape was attached to the divided resist film, the tape was peeled off, whereby the adhesion was evaluated based on the following evaluation criteria. [Evaluation Criteria for Heat-Resistant Adhesion] 〇: Among the 100 resist films after the division, the unpeeled resist film is i 00 Δ: 100 pieces of the resist film after the division are 'the unpeeled resist film is 80 ~99® X: Among the 100 resist films after splitting, the unpeeled resist film is ~79 (7) electrically insulating using the comb-shaped electrode B sample of the IPC B-25 test pattern In addition to the printed circuit board, an evaluation sample was obtained under the same conditions as the evaluation of the developability of the above (5). A bias voltage of DC 500 V was applied to the evaluation sample to measure the leakage current. Further, the electrical insulation properties were evaluated based on the measured values of the leakage current in accordance with the following evaluation criteria. _ [Evaluation criteria for electrical insulation] ◎: Leakage current is less than 1.0x10-6 A/cm2 〇: Leakage current is 1.0x10-6 A/cm2 or more and less than 1.5x10-6 A/cm2 △: Leakage current 1.5x10-6 A/cm2 or more and less than 2.0x10-6 A/cm2 X : Leakage current is 2.OxlO-6 A/cm2 or more The results are shown in the following Tables 11 to 17 » 137746.doc -69- 200937123 [Table 11]

實施例 實施例 實施例 實施例 實施例 實施例 實施例 34 35 36 37 38 39 40 22 100 23 100 24 100 25 100 26 100 27 100 28 100 29 30 31 32 33 具有不飽和雙鍵之 矽氧烷聚合物No. 34 化合物 35 36 37 38 調 39 配 成 分 量 40 41 42 43 44 45 46 丙烯酸系樹脂 環氡矽氧烷 氫化雙酚A型環氧樹脂 脂環式環氧樹脂 異三聚氱酸環氧樹脂 雙酚A型環氧樹脂 具有環狀醚基 47 之化合物 48 49 矽氧烷聚合物No. 50 51 52 53 二氡化鈦 300 300 300 300 300 300 300 光聚合起始劑 20 20 20 20 20 20 20 固形物酸值與環氧當量之積※1 - - - - - - - 初期反射率 90 90 90 90 90 90 90 耐光色調變化(ΔΕ+ab) ◎ ◎ ◎ ◎ ◎ ◎ ◎ 耐光反射率變化 ◎ ◎ ◎ ◎ ◎ ◎ ◎ 耐熱色調變化(AE^ab) 〇 〇 〇 〇 〇 〇 〇 棘/(# 耐熱反射率變化 〇 〇 〇 〇 〇 〇 〇 顯影性 〇 〇 〇 〇 〇 Δ Δ 耐回焊性 耐熱剝離或龜裂性 〇 〇 〇 〇 〇 〇 〇 耐熱密著性 △ △ △ Δ △ △ Δ 黏性 〇 〇 〇 〇 〇 〇 〇 電絕緣性 Δ Δ Δ Δ △ Δ Δ ※1樹脂成分之固形物酸值(KOHmg/g)與環氧當量(g/eq)之積 -70- 137746.doc 200937123 [表 12]EXAMPLES EXAMPLES EXAMPLES Examples 34 35 36 37 38 39 40 22 100 23 100 24 100 25 100 26 100 27 100 28 100 29 30 31 32 33 Oxide polymerization with unsaturated double bonds Compound No. 34 Compound 35 36 37 38 Adjust 39 Component amount 40 41 42 43 44 45 46 Acrylic resin cyclodecane hydrogenated bisphenol A epoxy resin alicyclic epoxy resin isotrimeric decanoic acid epoxy Resin bisphenol A type epoxy resin compound having cyclic ether group 47 48 49 siloxane polymer No. 50 51 52 53 titanium dihalide 300 300 300 300 300 300 300 Photopolymerization initiator 20 20 20 20 20 20 20 solid acid value and epoxy equivalent *1 - - - - - - - Initial reflectance 90 90 90 90 90 90 90 Light resistance hue change (ΔΕ+ab) ◎ ◎ ◎ ◎ ◎ ◎ ◎ Light reflectance change ◎ ◎ ◎ ◎ ◎ ◎ ◎ Heat-resistant color change (AE ^ab) 〇〇〇〇〇〇〇 / / (# heat-resistant reflectance change 〇〇〇〇〇〇〇 developability 〇〇〇〇〇 Δ Δ reflow-resistant heat-resistant peeling or cracking 〇〇〇〇〇〇 〇 heat-resistance △ △ △ Δ △ △ Δ Viscous 〇〇〇〇〇〇〇 Electrical insulation Δ Δ Δ Δ Δ Δ Δ *1 Solid content acid value (KOHmg / g) and epoxy equivalent of resin component ( g/eq) product -70- 137746.doc 200937123 [Table 12]

實施例 實施例 實施例 實施例 實施例 實施例 實施例 41 42 43 44 45 46 47 調 配 成 分 量 具有不飽和雙鍵之 化合物 矽氧烷聚合物No. 22 23 24 25 26 27 28 29 100 30 100 31 100 32 100 33 100 34 100 35 100 36 37 38 39 40 41 42 43 44 45 46 丙烯酸系樹脂 具有環狀醚基 之化合物 環氧矽氧烷 氩化雙酚A型環氧樹脂 脂環式環氧樹脂 異三聚氱酸環軋樹脂 雙酚A型環氧樹脂 矽氧烷聚合物No. 47 48 49 50 51 52 53 二氧化鈦 300 300 300 300 300 300 300 光聚合起始劑 20 20 20 20 20 20 20 固形物酸值與環氧當量之稍※1 評價 初期反射率 90 90 90 90 90 90 90 耐光色調變化(ΔΕ%!)) ◎ ◎ ◎ ◎ ◎ ◎ ◎ 耐光反射率變化 ◎ ◎ ◎ ◎ ◎ ◎ ◎ 耐熱色調變化(△Ehb) 〇 〇 〇 〇 〇 〇 〇 耐熱反射率變化 〇 〇 〇 〇 〇 〇 〇 顯影性 A 〇 〇 〇 〇 〇 〇 耐回焊性 耐熱剝離或龜裂性 〇 △ 〇 〇 〇 〇 Δ 耐熱密著性 △ △ Δ △ Δ Δ Δ 黏性 △ 〇 〇 〇 〇 〇 〇 電絕緣性 A △ Δ Δ △ Δ Δ ※1樹脂成分之固形物酸值(KOHmg/g)與環氧當量(g/eq)之積 • 71 - 137746.doc 200937123 [表 13] 實施例 實施例 實施例 實施例 實施例 實施例 實施例 48 49 50 51 52 53 54 22 23 24 25 26 27 28 29 30 31 32 33 具有不飽和雙鍵之 矽氡烷聚合物No. 34 化合物 35 36 100 37 100 38 100 調 39 100 配 成 分 量 40 100 41 100 42 100 43 包 44 45 46 丙烯酸系樹脂 環氧矽氧烷 氩化雙酚A型環氧樹脂 脂環式環氧樹脂 異三聚氟酸環氡樹脂 雙酚A型環氧樹脂 具有環狀醚基 47 之化合物 48 49 矽氧烷聚合物No. 50 51 52 53 二氧化鈦 300 300 300 300 300 300 300 光聚合起始劑 20 20 20 20 20 20 20 固形物酸值與環氧當量之積※1 - - - - - - - 初期反射率 90 90 90 90 90 90 90 耐光色調變化(AEbb) ◎ ◎ ◎ ◎ ◎ ◎ ◎ 耐光反射率變化 ◎ ◎ ◎ ◎ ◎ ◎ ◎ 耐熱色調變化(ΔΕ*αΙ>) 〇 〇 〇 〇 〇 〇 〇 耐熱反射率變化 〇 〇 〇 〇 〇 〇 〇 顯影性 〇 Δ 〇 〇 〇 〇 〇 耐回焊性 耐熱剝離或龜裂性 〇 〇 〇 〇 〇 〇 〇 耐熱密著性 △ Δ 〇 〇 〇 〇 〇 黏性 〇 〇 〇 〇 〇 〇 〇 電絕緣性 Δ Δ Δ Δ Δ Δ ΔEXAMPLES EXAMPLES EXAMPLES EXAMPLES EXAMPLES Example 41 42 43 44 45 46 47 Formulation Amount of compound having an unsaturated double bond, a siloxane polymer No. 22 23 24 25 26 27 28 29 100 30 100 31 100 32 100 33 100 34 100 35 100 36 37 38 39 40 41 42 43 44 45 46 Acrylic resin compound with cyclic ether group Epoxy siloxane argon bisphenol A epoxy resin alicyclic epoxy resin Iso-trimeric decanoic acid ring-rolling resin bisphenol A type epoxy resin siloxane polymer No. 47 48 49 50 51 52 53 Titanium dioxide 300 300 300 300 300 300 300 Photopolymerization initiator 20 20 20 20 20 20 20 Solid Acid value and epoxy equivalent slightly ※1 Evaluation initial reflectance 90 90 90 90 90 90 90 Light resistance hue change (ΔΕ%!)) ◎ ◎ ◎ ◎ ◎ ◎ ◎ Change in light reflectance ◎ ◎ ◎ ◎ ◎ ◎ ◎ Change in heat-resistant color tone (△Ehb) Change in heat-resistant reflectance 〇〇〇〇〇〇〇 developability A 〇〇〇〇〇〇 Reflow-resistant heat-resistant peeling or cracking 〇△ 〇〇〇〇Δ Heat-resistance △ △ Δ △ Δ Δ Δ Viscosity △ 〇〇〇〇〇〇 Electrical insulation A △ Δ Δ △ Δ Δ *1 Resin composition Product of solid acid value (KOHmg/g) and epoxy equivalent (g/eq) • 71 - 137746.doc 200937123 [Table 13] EXAMPLES EXAMPLES EXAMPLES EXAMPLES EXAMPLES Examples 48 49 50 51 52 53 54 22 23 24 25 26 27 28 29 30 31 32 33 decane polymer with unsaturated double bond No. 34 Compound 35 36 100 37 100 38 100 Adjust 39 100 Formulation amount 40 100 41 100 42 100 4344 45 46 Acrylic resin epoxy oxirane argon bisphenol A epoxy resin alicyclic epoxy resin isotrifluorofluoric acid cyclic bisphenol A type epoxy resin Compound 48 with cyclic ether group 47 49 Hydroxide polymer No. 50 51 52 53 Titanium dioxide 300 300 300 300 300 300 300 Photopolymerization initiator 20 20 20 20 20 20 20 Product of solid acid value and epoxy equivalent ※1 - - - - - - - Initial reflectance 90 90 90 90 90 90 90 Light-resistant color change (AEbb) ◎ ◎ ◎ ◎ ◎ ◎ ◎ Change in light reflectance ◎ ◎ ◎ ◎ ◎ ◎ ◎ Change in heat-resistant color tone (ΔΕ*αΙ>) 〇〇〇〇〇〇 〇Refractive heat reflectance change 〇〇〇〇〇〇〇 developability 〇 Δ 〇〇〇〇〇 Reflow resistance Heat-resistant peeling or cracking 〇〇〇〇〇〇〇 Heat-resistance Δ Δ 〇〇〇〇〇 〇〇〇〇〇 Electrical conductivity Δ Δ Δ Δ Δ Δ Δ

※1樹脂成分之固形物酸值(KOHmg/g)與環氧當量(g/eq)之積 -72- 137746.doc 200937123[表 14] ❹ .實施例 ~55~ 實施例 ~56~~ 實施例 ~57~ 實施例 "58~ 22互互 "26~ ~28" ~29~ 100 100 100 實施例 ~59~ 60 100 100 100 具有不餘和 雙鍵之 化合物 梦氧炫聚合物 No. 調配成分(重量份) 311Γ1Γ1ΓJTj£jTjT "39~ 42IT "44" "45" "46* 100 丙烯酸系樹脂 環氧矽氧炫__ 氩化雙酚A型環氧樹脂 脂環式環氧樹脂 異三聚氰酸環氧樹脂 雙酚環氡樹展~ 15 25 具有環狀醚基 之化合物 矽氧烷聚合物No. 47 48 49 50 51 52 53 15 二氧化鈦 光聚合起始劑 固形物酸值與環氧當董之精糸1 初期反射率 耐光色調變化(AE*ab) 耐光反射牟變化 耐熱色調變化(AE*ab) 300 20 90 ◎ 300 300 300 20 300 300 20 300 190000 ◎ ◎ 136000 180000 190000 180000 165000 ◎ ◎ ◎ ◎ 90 Δ △ 90 ◎ 評價 耐熱反射率蠻化 顯影性 耐回焊性 耐熱剝離或龜裂性 〇 〇 △ 〇 ◎ 〇 Δ Δ △ Δ 〇 〇 Ο 〇 △ △ Ο 〇 Δ △ 黏性 電絕緣性 耐熱密著性 〇 Δ 〇 Ο 〇 〇 〇 〇 〇 Ο 〇_ 〇_ 〇 ※1樹脂成分之固形物酸值(KOHmg/g)與環氧當量(g/eq)之積 I37746.doc -73· 200937123 [表 15]*1 Product of solid content acid value (KOHmg/g) and epoxy equivalent (g/eq) of resin component -72-137746.doc 200937123 [Table 14] ❹. Example ~55~ Example~56~~ Implementation Example ~57~ Example "58~22 Mutual"26~~28" ~29~ 100 100 100 Example ~59~ 60 100 100 100 Compound with no double bond and dream oxygen polymer No. Blending ingredients (parts by weight) 311Γ1Γ1ΓJTj£jTjT "39~ 42IT "44""45""46* 100 Acrylic resin epoxy oxime __ argon bisphenol A epoxy resin alicyclic ring Oxygen resin isocyanuric acid epoxy resin bisphenol ring eucalyptus tree ~ 15 25 compound oxoxane polymer having cyclic ether group No. 47 48 49 50 51 52 53 15 titanium dioxide photopolymerization initiator solid acid Value and Epoxy When Dong Zhijing 1 Initial Reflectance Light Tolerance Change (AE*ab) Light Resistance Reflectance Change Heat Tolerance Change (AE*ab) 300 20 90 ◎ 300 300 300 20 300 300 20 300 190000 ◎ ◎ 136000 180000 190000 180000 165000 ◎ ◎ ◎ ◎ 90 Δ △ 90 ◎ Evaluation of heat-resistant reflectivity, developability, reflow resistance, heat-resistant peeling or turtle 〇〇 〇〇 〇 〇 〇 Δ Δ Δ Δ 〇〇Ο 〇 △ △ Ο 〇 Δ 黏 viscous electrical insulation heat-resistant adhesive 〇 〇Ο 〇〇〇〇〇Ο 〇 〇 〇 〇 1 1 1 1 1 1 1 The product of solid acid value (KOHmg/g) and epoxy equivalent (g/eq) I37746.doc -73· 200937123 [Table 15]

❹ 實施例 實施例 「實施例 實施例 ★施例 實施例 實施例 62 63 64 65 66 67 68 m 配 成 分 * 量 具有不飽和雙鍵之 化合物 矽氧炫聚合物No. 22 23 24 25 26 100 100 100 100 100 100 100 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 丙烯酸系樹脂 具有環狀醚基 之化合物 環氧矽氡烷 ^化雙酚A型環氧樹脂 脂環式環氧樹脂 異三聚氱酸環氣樹脂 雙驗A型環氣榭脂 矽氧烷聚合物No. 47 48 15 49 12 50 200 51 250 52 10 53 30 400 二氧化鈦 300 300 300 300 300 300 300 光聚合起始劑 20 20 20 20 20 20 20 固形逢 評價 酸值與環氡當量之精※1 219000 116000 165000 148000 275000 165000 25000 初期反射率 90 90 90 90 90 90 90 耐光色調變化(AE*ab) ◎ ◎ ◎ ◎ ◎ ◎ ◎ 耐光反射率變化 ◎ ◎ ◎ ◎ ◎ ◎ ◎ 耐熱色調變化(AE*ab) ◎ ◎ ◎ ◎ ◎ ◎ ◎ 耐熱反射率響化 ◎ ◎ ◎ ◎ ◎ ◎ ◎ 顯影性 △ Γ 〇 〇 〇 △ 〇 △ 耐回焊性 耐熱剝離或龜裂性 〇 〇 〇 〇 〇 〇 〇 耐熱密著性 「〇 「〇 〇 △ 〇 〇 〇 ,性 厶 〇 〇 〇 〇 〇 〇 電絕緣性 〇 〇 〇 〇 〇 〇 〇 樹脂成分之固形物酸值(KOHmg/g)與環氧當量(g/eq)之積 -74- 137746.doc 200937123 [表 16] Ο ❹ 實施例 實施例 實施例 實施例 實施例 實施例 69 70 71 72 73 74 調 配 成 分 量 具有不德和雙鍵之 化合‘ 矽氡烷聚合物No. 22 23 24 25 26 100 100 100 100 100 1〇〇 27 28 29 30 31 ——- _32 33 34 35 36 37 38 39 40 41 42 43 44 1 45 46 内緙致糸樹脂 具有環狀蜮基 之化合物 環氡矽氧烷 氩化雙酚A型環氧樹脂 一 脂環式環氧樹脂 異二聚氛酸環氧樹脂 «盼八型艰軋樹脂 矽氧烷聚合物No. 47 48 49 50 51 52 53 320 20 15 30 30 30 二軋化銥 100 300 300 100 1000 1200 光聚合起始劑 一· 20 20 20 20 20 20 固形杉 f酸值與環氧當量之積※1 - 31000 490000 670000 165000 165000 165000 評價 初期反射率 1 90 90 90 80 95 96 对光色調變化(AE*ab) —◎— ◎ ◎ ◎ ◎ ◎ 耐光反射率變化 — ◎ ◎ ◎ ◎ ◎ ◎ 对熱色調變化(ΔΕ*&1)) ◎ ◎ ◎ ◎ ◎ ◎ 耐熱反射率變化 ◎ ◎ ◎ ◎ ◎ ◎ 顧影性 - 〇 〇 〇 〇 Δ 耐回焊性 *ί热利離或一 〇 〇 △ 〇 〇 〇 财熱密著性 r\ 〇 〇 〇 〇 〇 黏性 ---- —y_ 電絕緣性 — 〇 〇 〇 〇 〇 Lo^ 〇 〇 〇 〇 〇 ※丨樹脂成分之固形物酸值(K0Hmg/g)與環氧當量(g/eq)之積 137746.doc -75· 200937123 [表 17] 比較例 比較例 比較例 比較例 5 6 7 8 調 配 成 分 1 量 份 具有不飽和雙鍵之 化合物 矽氡烷聚合物No. 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 100 45 100 46 100 丙烯酸系樹脂 100 環氧矽氧烷 氩化雙酚A型環氧樹脂 脂環式環氧樹脂 異三聚氱酸環氧樹脂 雙酚A型環氧樹脂 10 具有環狀謎基 47 之化合物 48 49 矽氧烷聚合物No. 50 51 52 53 二氧化鈦 300 300 300 300 光聚合起始劑 20 20 20 20 固形物酸值與環氧當量之積※1 - _ - - 初期反射率 90 90 90 90 耐光色調變化(△Ehb) ◎ ◎ ◎ X 耐光反射率變化 ◎ ◎ ◎ X 耐熱色調變化(AE*ab) ◎ ◎ © X 耐熱反射率變化 ◎ ◎ ◎ X 顯影性 〇 X X 〇 耐回焊性 耐熱剝離或龜裂性 X 〇 〇 〇 耐熱密著性 Δ Δ Δ 〇 黏性 〇 X 〇 〇 電絕緣性 Δ △ Δ 〇实施 EXAMPLES EXAMPLES EXAMPLES EMBODIMENT EXAMPLES Example 62 63 64 65 66 67 68 m Formulation* A compound having an unsaturated double bond oxirane polymer No. 22 23 24 25 26 100 100 100 100 100 100 100 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 Acrylic resin compound with cyclic ether group Epoxy decane bisphenol A type epoxy resin grease Ring epoxy resin isotrimeric decanoic acid ring resin double test type A ring gas oxime siloxane polymer No. 47 48 15 49 12 50 200 51 250 52 10 53 30 400 titanium dioxide 300 300 300 300 300 300 300 300 Photopolymerization initiator 20 20 20 20 20 20 20 Solid shape evaluation of acid value and ring equivalent weight ※1 219000 116000 165000 148000 275000 165000 25000 Initial reflection耐 耐 耐 耐○ ◎ ◎ ◎ ◎ ◎ Development △ Γ 〇〇〇 △ △ △ Reflow resistance, heat-resistant peeling, cracking, heat resistance, "〇" 〇〇 △ 〇〇 〇, the product of the solid acid value of the electrically insulating enamel resin component (KOHmg/g) and the epoxy equivalent (g/eq) -74- 137746.doc 200937123实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施100 100 100 1〇〇27 28 29 30 31 ——- _32 33 34 35 36 37 38 39 40 41 42 43 4 4 1 45 46 缂 缂 缂 糸 具有 具有 具有 具有 具有 化合物 化合物 化合物 化合物 化合物 化合物 化合物 化合物 盼 盼 盼 盼 盼 盼 盼 盼 盼 盼 盼 盼 盼 盼 盼 盼 盼 盼Rolled resin siloxane polymer No. 47 48 49 50 51 52 53 320 20 15 30 30 30 Two-rolled bismuth 100 300 300 100 1000 1200 Photopolymerization initiator A·20 20 20 20 20 20 Product with epoxy equivalent ※1 - 31000 490000 670000 165000 165000 165000 Evaluation of initial reflectance 1 90 90 90 80 95 96 Change in hue (AE*ab) — ◎ — ◎ ◎ ◎ ◎ ◎ Change in light reflectance — ◎ ◎ ◎ ◎ ◎ ◎ Change in hot color (ΔΕ* & 1)) ◎ ◎ ◎ ◎ ◎ ◎ Change in heat-resistant reflectance ◎ ◎ ◎ ◎ ◎ ◎ 影 影 - 〇〇〇〇 Δ Reflow resistance * 热 离Or a 〇〇 〇〇〇 〇〇〇 热 热 r r \ r 〇〇〇〇〇 〇〇〇〇〇 〇〇〇〇〇 〇〇〇〇〇 〇〇〇〇〇 〇〇〇〇〇 y ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ 〇〇〇〇〇 〇〇〇〇〇 〇〇〇〇〇 Product of solid content acid value (K0Hmg/g) and epoxy equivalent (g/eq) of resin component 137746.doc -75· 200937123 [Table 17] Comparative example Comparative example Comparative example Comparative example 5 6 7 8 Formulation component 1 amount Compound decane polymer having an unsaturated double bond No. 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 100 45 100 46 100 Acrylic resin 100 Epoxy oxime Oxylkane argon bisphenol A type epoxy resin alicyclic epoxy resin isotrimeric decanoic acid epoxy resin bisphenol A type epoxy resin 10 compound having a ring puzzle 47 48 49 siloxane polymer No. 50 51 52 53 Titanium dioxide 300 300 300 300 Photopolymerization initiator 20 20 20 20 Product of acid value and epoxy equivalent of solids *1 - _ - - Initial reflectance 90 90 90 90 Light tonal change (△Ehb) ◎ ◎ ◎ X Light resistance reflectance change ◎ ◎ ◎ X Heat resistant color tone Change (AE*ab) ◎ ◎ © X Heat-resistant reflectance change ◎ ◎ ◎ X Developability 〇 XX 〇 Reflow-resistant heat-resistant peeling or cracking X 〇〇〇 Heat-resistant adhesiveness Δ Δ Δ 〇 Viscous 〇 X 〇 〇Electrical insulation Δ Δ Δ 〇

※1樹脂成分之固形物酸值(KOHmg/g)與環氧當量(g/eq)之積 -76- 137746.doc 200937123 【圖式簡單說明】 圖1係示意性地表示具備使用本發明之一實施形態之抗 蝕劑材料所形成的抗蝕膜之LED元件的部分欠缺正面剖面 圖。 圖2係表示具備使用本發明之一實施形態之抗姓劑材料 ‘ 所形成的抗蝕膜之LED元件之變形例的部分欠缺正面剖面 . 圖。 圖3(a)〜(d)係用以說明製造LED元件之各步驟之一例的 © 部分欠缺正面剖面圖’圖3(a)係表示於基板上形成有抗轴 劑材料層之狀態的圖,圖3 (b)係表示對基板上所形成之抗 蝕劑材料層進行曝光時之狀態的圓,圖3(c)係表示於基板 上形成有抗蝕膜之狀態的圖,圖3(d)係表示於抗钕膜上積 層有LED晶片之狀態的圖。 圖4係於XYZ表色系統之色度圖中繪出耐熱性試驗前後 之實施例及比較例的抗蝕膜之色度座標(X、y)之圖。 圖5係示意性地表示XYZ表色系統中之色度圖的圖。 ^ 【主要元件符號說明】 1 LED元件 2 基板 2a 上表面 3 抗蝕膜 3a 上表面 4a ' 4b 電極 7 LED晶片 137746.doc •77· 200937123 7a 8a ' 8b 9a、9b 11 11a * lib • 12 12a O 12b*1 Product of solid content acid value (KOHmg/g) and epoxy equivalent (g/eq) of resin component -76-137746.doc 200937123 [Simplified description of the drawings] Fig. 1 is a schematic view showing the use of the present invention. A portion of the LED element of the resist film formed by the resist material of one embodiment lacks a front cross-sectional view. Fig. 2 is a partial front cross-sectional view showing a modification of an LED element having a resist film formed by using an anti-surname material of an embodiment of the present invention. 3(a) to 3(d) are diagrams showing a part of each step of manufacturing an LED element. FIG. 3(a) is a view showing a state in which a layer of a resist material is formed on a substrate. 3(b) is a view showing a state in which a resist material layer formed on a substrate is exposed, and FIG. 3(c) is a view showing a state in which a resist film is formed on the substrate, and FIG. 3 (FIG. 3) d) is a view showing a state in which an LED chip is laminated on the anti-caries film. Fig. 4 is a graph showing the chromaticity coordinates (X, y) of the resist films of the examples and comparative examples before and after the heat resistance test in the chromaticity diagram of the XYZ color system. Fig. 5 is a view schematically showing a chromaticity diagram in the XYZ color system. ^ [Main component symbol description] 1 LED element 2 Substrate 2a Upper surface 3 Resist film 3a Upper surface 4a ' 4b Electrode 7 LED wafer 137746.doc •77· 200937123 7a 8a ' 8b 9a, 9b 11 11a * lib • 12 12a O 12b

21 A 下表面 端子 焊錫 抗蝕劑材料層 曝光部 未曝光部 遮罩 開口部 遮罩部 樹脂板 由LED發出之光 ❿ 137746.doc -78-21 A Lower surface Terminal Solder Resist material layer Exposure part Unexposed part Mask Opening part Mask part Resin board Light emitted by LED 137 137746.doc -78-

Claims (1)

200937123 七、申請專利範圍: 1. 一種抗姓劑材料,其係用於形成發出波長為_ nm以下 之光的發光二極體元件之抗钱膜者, 且含有矽氧烷聚合物及白色填料。 2. 青求項1之抗餘劑材料,其中上述石夕氧烧聚合物係藉 由使下述式⑴所表*之至少—種㈣化合物聚合所得之 矽氧烷聚合物, Si(X)p(R)4_ p.式⑴ ❹ 上述式(1)中,X表示水解性基,r表*碳數為u之 非水解性之有機基,p表示卜4之整數;當?為Μ時複 固可相同亦可不同;當口為以]時複數個r可相同 亦可不同。 3·如請求項2之抗餘劑材料,其_上料氧院聚合物係具 有環狀醚基之矽氧烷聚合物,並且上述具有環狀醚基之 發氧烧聚合物係藉*使上述式⑴巾之p為1〜3的整數且至 少一個R為具有環狀醚基之有機基的矽烷化合物聚合所 得之矽氧烷聚合物。 4. 如凊求項3之抗蝕劑材料,其中上述具有環狀醚基之矽 氧烷聚合物具有在矽原子上直接鍵結有碳原子之有機 基’且該有機基之1〇〜80%具有環狀醚基。 5. 如凊求項3或4之抗蝕劑材料,其中上述具有環狀醚基之 有機基含有具有環氧環己烷骨架之有機基。 6. 如請求項5之抗蝕劑材料,其中上述具有環狀醚基之矽 氧烷聚合物具有在矽原子上直接鍵結有碳原子之有機 137746.doc 200937123 基,且該有機基之10〜80%具有環氧環己烷骨架。 7. 如請求項2至6中任一項之抗蝕劑材料,其中上述式(1)所 表示之矽烷化合物100 mol%中,上述式(1)所表示且上述 式(1)中之p為2的矽烷化合物之含量為2〇〜10〇 m〇1%之範 圍内。 8. 如請求項1至7中任一項之抗蝕劑材料,其進而含有具有 酸酐基或羧基、以及不飽和雙鍵之樹脂。 9,如請求項8之抗蝕劑材料,其中樹脂成分之固形物酸值 (mgKOH/g)與樹脂成分之環氧當量(g/eq)之積係在 25000〜100000之範圍内。 10.如請求項1至9中任一項之抗蝕劑材料,其進而含有光自 由基產生劑。 11·如請求項1至9中任一項之抗蝕劑材料,其進而含有光酸 產生劑。 12, —種抗蝕劑材料,其含有藉由使下述式(1)所表示之至少 一種矽烷化合物聚合所得之矽氧烷聚合物、光聚合起始 劑、及白色填料, 上述式(1)所表示之至少一種矽烷化合物含有下述式 (1)所表示且下述式(1)中之?為2的矽烷化合物, 且上述矽氧烷聚合物之重量平均分子 1000〜50000之範圍内, 、 Si(X)P(R)4-p...式⑴ 上述式⑴中,X㈣水解性基,R表示碳數〜3〇之 非水解性之有機基,p表示卜4之整數;當…〜4時複 137746.doc -2- 200937123 數個X可相同亦可不同;當…或2時 亦可不同。 複數個R可相同 13 14. ❹ 15. Si項1之抗蝕劑材料’其中上述式⑴所表示之石夕烷 為2:二0,,上述式⑴所表示且上述式⑴中之P 烷化合物之含量為5〜1 〇〇 mol。/。之範圍内。 如請求項1或2之抗姓劑材料,其中上述矽氧烷聚合物含 有具有^飽和雙鍵之錢烧聚合物,上述具有不飽和雙 鍵之石夕氧燒聚合物係藉由使上述式⑴中之p為1〜3的整數 且至J一個R為具有不飽和雙鍵之有機基的矽烷化合物 聚合所得之矽氧烷聚合物。 如凊求項3之抗蝕劑材料,其中上述具有不飽和雙鍵之 16. 矽氧烷聚合物具有在矽原子上直接鍵結有碳原子之有機 基’且該有機基之5〜80%具有不飽和雙鍵。 如請求項1或2之抗蝕劑材料,其中上述矽氧烷聚合物含 有具有酸酐基或羧基、以及不飽和雙鍵之矽氧烷聚合 物, ❹ 17. 上述具有酸酐基或叛基、及不飽和雙鍵之石夕氧烧聚合 物係藉由使上述式(1)中之P為1〜3的整數且至少一個R為 具有酸酐基或羧基之有機基的矽烷化合物、與上述式(1) 中之p為1〜3的整數且至少一個R為具有不飽和雙鍵之有 機基的矽烷化合物聚合所得之矽氧烷聚合物。 如請求項16之抗蝕劑材料,其中上述具有酸肝基或叛 基、及不飽和雙鍵之石夕氧燒聚合物具有在發原子上直接 鍵結有碳原子之有機基,該有機基之1〜25%具有,酸射基 137746.doc 200937123 或羧基,且該有機基之5〜80%具有不飽和雙鍵。 18.如請求項⑴中任一項之抗蝕劑材料其中上述矽氧烷 聚合物含有具有環狀趟基之梦氧炫聚合物,上述具有環 狀醚基之矽氧烷聚合物係藉由使上述式⑴中之p為卜3的 整數且至少-個R為具有環狀_基之有機基时炫化合 物聚合所得之矽氧烷聚合物。 A如請求項18之抗银劑材料,其中上述具有環狀謎基之石夕 氧烧聚合物具有在石夕原子上直接鍵結有碳原子之有機 基,且該有機基之5〜8〇%具有環狀醚基。 2〇·如請求項1至6中任-項之抗蝕劑材料,其中上述矽氧烷 聚合物含有具有酸軒基或縣、不飽和雙鍵、以及環狀 越基之矽氧烷聚合物, 上述具有酸肝基或叛基、不飽和雙鍵、以及環狀鍵基 之石夕氧烧聚合物係藉由使上述式⑴中之p為卜3的整數且 至少-個R為具有酸肝基或叛基之有機基的石夕院化合 物、上述式⑴中之P為1〜3的整數且至少一個R為具有不 飽和雙鍵之有機基的石夕院化合物、以及上述式⑴中之p 為1 3的整數且至少一個尺為具有環狀鱗基之有機基的矽 烷化合物聚合所得之矽氧烷聚合物。 21·如請求項9之抗银劑材料,其中上述具有酸酐基或叛 基、不飽和雙鍵、以及環狀越基之妙氧烷聚合物具有在 石夕原子上直接鍵結有碳原子之有機基,該有機基之 具有酸酐基或羧基,該有機基之5〜8〇%具有不飽 和雙鍵’且該有機基之5〜8〇%具有環狀謎基。 137746.doc 200937123 22.如請求項10之抗蝕劑材料,其中樹脂成分之固形物酸值 (mgKOH/g)與環氧當量(g/eq)之積係在300〇〇〜5〇〇〇〇〇之範 圍内。 23. 如請求項12至22中任一項之抗蝕劑材料,其中相對於上 述石夕氧烧聚合物100重量份’上述白色填料之含量為 150〜1000重量份之範圍内。200937123 VII. Scope of Application: 1. An anti-surname material used to form an anti-money film of a light-emitting diode element emitting light having a wavelength of _ nm or less, and containing a siloxane polymer and a white filler. . 2. The anti-residue material of claim 1, wherein the above-mentioned oxaxy-oxygenated polymer is a siloxane polymer obtained by polymerizing at least a compound of the above formula (4), Si(X) p(R)4_p. Formula (1) ❹ In the above formula (1), X represents a hydrolyzable group, r represents a non-hydrolyzable organic group having a carbon number of u, and p represents an integer of Bu 4; It can be the same or different when it is cured; when the mouth is in the case, the plural r can be the same or different. 3. The anti-residue material of claim 2, wherein the oxidized polymer is a cyclooxyl polymer having a cyclic ether group, and the oxy-fired polymer having a cyclic ether group is The p-formula of the above formula (1) is a oxyalkylene polymer obtained by polymerizing a decane compound having an integer of 1 to 3 and at least one R is an organic group having a cyclic ether group. 4. The resist material according to claim 3, wherein the above-mentioned naphthenic polymer having a cyclic ether group has an organic group in which a carbon atom is directly bonded to a germanium atom and the organic group is 1 to 80. % has a cyclic ether group. 5. The resist material according to Item 3 or 4, wherein the organic group having a cyclic ether group contains an organic group having an epoxycyclohexane skeleton. 6. The resist material of claim 5, wherein the above-mentioned naphthenic polymer having a cyclic ether group has an organic 137746.doc 200937123 group having a carbon atom directly bonded to a ruthenium atom, and the organic group is 10 ~80% has an epoxycyclohexane skeleton. 7. The resist material according to any one of claims 2 to 6, wherein 100% by mole of the decane compound represented by the above formula (1), represented by the above formula (1) and p in the above formula (1) The content of the decane compound of 2 is in the range of 2 Å to 10 〇 m 〇 1%. 8. The resist material according to any one of claims 1 to 7, which further contains a resin having an acid anhydride group or a carboxyl group and an unsaturated double bond. 9. The resist material of claim 8, wherein the product of the solid content acid value (mgKOH/g) of the resin component and the epoxy equivalent (g/eq) of the resin component is in the range of 25,000 to 100,000. The resist material according to any one of claims 1 to 9, which further contains a photo radical generating agent. The resist material according to any one of claims 1 to 9, which further contains a photoacid generator. A resist material comprising a siloxane polymer obtained by polymerizing at least one decane compound represented by the following formula (1), a photopolymerization initiator, and a white filler, wherein the above formula (1) Is the at least one decane compound represented by the following formula (1) and in the following formula (1)? Is a decane compound of 2, and the weight average molecular weight of the above-mentioned siloxane polymer is in the range of 1000 to 50000, Si(X)P(R)4-p... Formula (1), X(tetra)hydrolyzable group in the above formula (1) , R represents a non-hydrolyzable organic group having a carbon number of ~3〇, p represents an integer of Bu 4; when ...~4, 137746.doc -2- 200937123, a plurality of X may be the same or different; when ... or 2 It can also be different. The plurality of R may be the same 13 14. ❹ 15. The resist material of the Si item 1 wherein the alkane represented by the above formula (1) is 2: 20,000, and the P alkane represented by the above formula (1) and the above formula (1) The content of the compound is 5 to 1 〇〇mol. /. Within the scope. The anti-surname material according to claim 1 or 2, wherein the above-mentioned decyl alkane polymer contains a money-burning polymer having a saturated double bond, and the above-mentioned anthracene-oxygenated polymer having an unsaturated double bond is caused by the above formula (1) The p-oxyalkylene polymer obtained by polymerizing a decane compound having an organic group of an unsaturated double bond and having an integer of from 1 to 3 and wherein R is an organic group having an unsaturated double bond. The resist material of claim 3, wherein the above-mentioned unsaturated double bond 16. The siloxane polymer has an organic group directly bonded to a ruthenium atom with a carbon atom and 5 to 80% of the organic group Has an unsaturated double bond. The resist material according to claim 1 or 2, wherein the above-mentioned siloxane polymer contains a siloxane polymer having an acid anhydride group or a carboxyl group and an unsaturated double bond, ❹ 17. the above having an acid anhydride group or a thiol group, and The above-mentioned formula (1) is a decane compound in which P in the above formula (1) is an integer of 1 to 3 and at least one R is an organic group having an acid anhydride group or a carboxyl group, and the above formula ( 1) A p-oxyalkylene polymer obtained by polymerizing a decane compound in which p is an integer of 1 to 3 and at least one R is an organic group having an unsaturated double bond. The resist material of claim 16, wherein the above-mentioned oxalate-oxygenated polymer having an acid-hepatic group or a thiol group and an unsaturated double bond has an organic group directly bonded to a carbon atom at an atom, the organic group 1 to 25% has an acid radical 137746.doc 200937123 or a carboxyl group, and 5 to 80% of the organic group has an unsaturated double bond. The resist material according to any one of the preceding claims, wherein the above-mentioned siloxane polymer contains a cyclooxygen polymer having a cyclic thiol group, and the above-mentioned oxirane polymer having a cyclic ether group is The pyrithione polymer obtained by polymerizing p in the above formula (1) as an integer of 3 and at least one R is an organic group having a cyclic group. A. The anti-silver agent material of claim 18, wherein the above-mentioned rocky oxygen-fired polymer having a ring-shaped mystery has an organic group directly bonded with a carbon atom on the stone atom, and the organic group is 5 to 8 Å. % has a cyclic ether group. The resist material according to any one of claims 1 to 6, wherein the above-mentioned hafnoxy polymer contains a neodymium oxide polymer having an acid group or a county, an unsaturated double bond, and a cyclic hetero group The above-mentioned anthraquinone-oxygenated polymer having an acid-hepatic group or a thiol group, an unsaturated double bond, and a cyclic bond group is obtained by making p in the above formula (1) an integer of 3 and at least - R is an acid A hepatic-based or ruthenium-based organic compound of the Shixia compound, wherein P in the above formula (1) is an integer of 1 to 3 and at least one R is an organic group having an unsaturated double bond, and the above formula (1) The p-oxyalkylene polymer obtained by polymerizing a decane compound having an integer of 1 3 and at least one of which is an organic group having a cyclic squaring group. The anti-silver agent material according to claim 9, wherein the above-mentioned acid anhydride group or thiol group, unsaturated double bond, and cyclic oxyalkylene polymer have a carbon atom directly bonded to the stone atom. The organic group has an acid anhydride group or a carboxyl group, and 5 to 8 % of the organic group has an unsaturated double bond ' and 5 to 8 % by weight of the organic group has a cyclic mystery. 127746.doc 200937123 22. The resist material of claim 10, wherein the product of the solid content acid value (mgKOH/g) of the resin component and the epoxy equivalent (g/eq) is between 300 〇〇 and 5 〇〇〇. Within the scope of 〇〇. The resist material according to any one of claims 12 to 22, wherein the content of the above white filler is in the range of 150 to 1000 parts by weight with respect to 100 parts by weight of the above-mentioned australis. 24. —種積層體,其具備印刷電路板以及抗蝕膜,該抗蝕 積層於該印刷電路板之表面上、且係使用如請^ 23中任一項之抗蝕劑材料而形成。 至A laminated body comprising a printed circuit board and a resist film formed on a surface of the printed circuit board and using a resist material according to any one of the above. to 137746.doc137746.doc
TW98101387A 2008-01-15 2009-01-15 Resist material and laminate TW200937123A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008005662 2008-01-15
JP2008265271 2008-10-14
JP2008265272 2008-10-14

Publications (2)

Publication Number Publication Date
TW200937123A true TW200937123A (en) 2009-09-01
TWI337690B TWI337690B (en) 2011-02-21

Family

ID=40885259

Family Applications (1)

Application Number Title Priority Date Filing Date
TW98101387A TW200937123A (en) 2008-01-15 2009-01-15 Resist material and laminate

Country Status (3)

Country Link
JP (1) JP4392464B2 (en)
TW (1) TW200937123A (en)
WO (1) WO2009090867A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8722755B2 (en) 2012-03-16 2014-05-13 Chi Mei Corporation Photosensitive resin composition and uses thereof
CN110333647A (en) * 2019-07-03 2019-10-15 北京波米科技有限公司 A kind of positive type photosensitive organic compound

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5581614B2 (en) * 2008-07-31 2014-09-03 Jsr株式会社 Radiation-sensitive composition for forming colored layer, color filter, and color liquid crystal display element
WO2011013709A1 (en) * 2009-07-31 2011-02-03 Jsr株式会社 Light-emitting element, method for manufacturing light-emitting element, and composition for forming light-emitting element protective layer
WO2011018907A1 (en) * 2009-08-10 2011-02-17 積水化学工業株式会社 Photosensitive composition and solder resist composition
JP2011100975A (en) * 2009-10-09 2011-05-19 Jsr Corp Light-emitting element, method for manufacturing light-emitting element, and composition for forming light-emitting element protective layer
JP2011100974A (en) * 2009-10-09 2011-05-19 Jsr Corp Light-emitting element and composition for forming light-emitting element protective layer
WO2011062053A1 (en) * 2009-11-17 2011-05-26 株式会社タムラ製作所 Flame-retardant solder resist composition and flexible wiring board which is obtained using same
JP5673562B2 (en) * 2010-01-28 2015-02-18 Jsr株式会社 Semiconductor light emitting device manufacturing method, semiconductor light emitting device, and photosensitive composition used in semiconductor light emitting device manufacturing method
US8616732B2 (en) 2010-02-12 2013-12-31 Toshiba Lighting & Technology Corporation Light-emitting device and illumination device
JP6061440B2 (en) * 2010-02-25 2017-01-18 太陽ホールディングス株式会社 Resin composition for polyester substrate, dry film and printed wiring board using the same
JP5820568B2 (en) * 2010-03-31 2015-11-24 太陽ホールディングス株式会社 Curable resin composition, dry film and printed wiring board using the same
CN102844708B (en) * 2010-04-14 2015-11-25 东丽株式会社 Negative light-sensitive resin combination, the diaphragm using said composition and touch panel component
JP5719613B2 (en) * 2011-01-27 2015-05-20 セイコーインスツル株式会社 Optical device, light emitting device, and method of manufacturing functionally gradient material
JP5729329B2 (en) * 2011-03-31 2015-06-03 Jsr株式会社 Radiation-sensitive composition, cured film and method for forming the same
EP2752712A4 (en) * 2011-08-31 2014-12-03 Asahi Kasei E Materials Corp Photosensitive alkali-soluble silicone resin composition
JP5828292B2 (en) * 2011-11-25 2015-12-02 信越化学工業株式会社 Acid anhydride group-containing organosiloxane and method for producing the same
JP2013033282A (en) * 2012-10-26 2013-02-14 Taiyo Holdings Co Ltd Curable resin composition, and dry film and printed wiring board using the same
JP5450763B2 (en) * 2012-10-26 2014-03-26 太陽ホールディングス株式会社 Curable resin composition, dry film and printed wiring board using the same
US9651865B2 (en) 2013-02-14 2017-05-16 Toray Industries, Inc. Negative-type photosensitive coloring composition, cured film, light-shielding pattern for touch panel, and touch panel manufacturing method
JP6456632B2 (en) * 2013-09-05 2019-01-23 三洋化成工業株式会社 Photosensitive resin composition
JP5876862B2 (en) * 2013-12-03 2016-03-02 太陽ホールディングス株式会社 Resin composition for polyester substrate, dry film and printed wiring board using the same
KR101845081B1 (en) * 2014-11-28 2018-04-04 삼성에스디아이 주식회사 Composition for window film, flexible window film prepared using the same and flexible display apparatus comprising the same
KR101758438B1 (en) * 2014-12-02 2017-07-17 삼성에스디아이 주식회사 Composition for window film, flexible window film prepared using the same and flexible display apparatus comprising the same
KR101908163B1 (en) 2014-12-03 2018-10-16 삼성에스디아이 주식회사 Composition for window film, flexible window film prepared using the same and flexible display apparatus comprising the same
JP6002203B2 (en) * 2014-12-10 2016-10-05 互応化学工業株式会社 Resin composition for solder resist and printed wiring board
KR101835866B1 (en) 2014-12-17 2018-03-08 삼성에스디아이 주식회사 Composition for window film, flexible window film prepared using the same and flexible display apparatus comprising the same
KR101835867B1 (en) 2014-12-23 2018-03-08 삼성에스디아이 주식회사 Composition for window film, flexible window film prepared using the same and flexible display apparatus comprising the same
JP6438298B2 (en) * 2014-12-25 2018-12-12 株式会社カネカ New photosensitive resin composition and its application
WO2017057543A1 (en) * 2015-09-30 2017-04-06 東レ株式会社 Photosensitive resin composition, cured film, touch panel, and manufacturing method for touch panel
WO2017159190A1 (en) * 2016-03-14 2017-09-21 富士フイルム株式会社 Composition, film, cured film, optical sensor, and film production method
JP2018151628A (en) * 2017-03-10 2018-09-27 日本化薬株式会社 Photosensitive resin composition and cured product of the same, and article
JP7147197B2 (en) * 2018-03-16 2022-10-05 大日本印刷株式会社 Wiring board and method for manufacturing wiring board
US11294284B2 (en) * 2018-07-17 2022-04-05 Shin-Etsu Chemical Co., Ltd. Photosensitive resin composition and pattern forming process
JP2021071661A (en) * 2019-10-31 2021-05-06 株式会社カネカ Photosensitive composition, colored pattern, and method for producing the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56136816A (en) * 1980-03-31 1981-10-26 Shin Etsu Chem Co Ltd Epoxy resin composition
JP4110401B2 (en) * 2003-06-13 2008-07-02 信越化学工業株式会社 Photosensitive silicone resin composition, cured product thereof and method for forming negative fine pattern
JP4630032B2 (en) * 2004-10-04 2011-02-09 東レ・ダウコーニング株式会社 Polyorganosiloxane, curable silicone composition containing the same, and use thereof
JP2006213763A (en) * 2005-02-01 2006-08-17 Asahi Kasei Corp Resin composition for sealing light-emitting element, light-emitting part, and display device given by using the light-emitting part
JP4711208B2 (en) * 2006-03-17 2011-06-29 山栄化学株式会社 Photosensitive thermosetting resin composition, resist film-coated smoothed printed wiring board, and method for producing the same.
KR20090014176A (en) * 2006-04-26 2009-02-06 세키스이가가쿠 고교가부시키가이샤 Thermosetting composition for optical semiconductor, die bond material for optical semiconductor device, underfill material for optical semiconductor device, sealing agent for optical semiconductor device, and optical semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8722755B2 (en) 2012-03-16 2014-05-13 Chi Mei Corporation Photosensitive resin composition and uses thereof
CN110333647A (en) * 2019-07-03 2019-10-15 北京波米科技有限公司 A kind of positive type photosensitive organic compound
CN110333647B (en) * 2019-07-03 2023-04-14 波米科技有限公司 Positive photosensitive resin composition

Also Published As

Publication number Publication date
JPWO2009090867A1 (en) 2011-05-26
TWI337690B (en) 2011-02-21
WO2009090867A1 (en) 2009-07-23
JP4392464B2 (en) 2010-01-06

Similar Documents

Publication Publication Date Title
TW200937123A (en) Resist material and laminate
KR100894609B1 (en) Photosensitive thermosetting resin composition, flattened and resist film coated printed wiring board and method of preparing the same
JP6637674B2 (en) Printed wiring board, method for manufacturing printed wiring board, and semiconductor device
TWI793795B (en) Curable resin composition, dry film, cured product and printed wiring board
WO2013022068A1 (en) Photosensitive resin composition, photosensitive film, permanent resist and method for producing permanent resist
TW201209519A (en) Silphenylene-containing photocurable composition, pattern formation method using same, and optical semiconductor element obtained using the method
TW201109841A (en) Photosensitive composition and printed wiring board
JP2024036514A (en) Photosensitive resin composition, and dry film, printed wiring board and method for manufacturing printed wiring board using the composition
TW200540568A (en) Photosensitive resin composition and cured product thereof
KR20110084493A (en) Positive photosensitive composition and permanent resist
TW201512774A (en) Radiation-sensitive resin composition, resin film, and electronic component
KR101799361B1 (en) Photosensitive resin composition
JP2020184010A (en) Radiation-sensitive composition, insulation film for display device, display device, method of forming insulation film for display device, and silsesquioxane
TWI730037B (en) Photocuring method, compound and composition used therefor
EP1164435B1 (en) Photosensitive polysilazane composition and method of forming patterned polysilazane film
JP2012237854A (en) Positive photosensitive composition and cured product of the same
TWI546338B (en) A photohardenable resin composition and a novel siloxane compound
TWI363931B (en)
TWI768059B (en) Light or heat curing method and curable resin composition
TWI793289B (en) Process for producing alkali-soluble resin containing polymerizable unsaturated group, alkali-soluble resin containing polymerizable unsaturated group, photosensitive resin composition containing it as an essential component, and cured film thereof
JP2006106214A (en) Flattening resin layer and semiconductor device having the same, and display apparatus
TW200404049A (en) Photosensitive composition for interlayer insulating film and forming method of patterned interlayer insulating film
TW201125898A (en) Alkali-soluble resin containing silicone resin, light-sensitive resin composition, and cured object using light-sensitive resin composition
JP2006098984A (en) Flattening resin layer, and semiconductor device and display apparatus having same
JP7382068B2 (en) Interlayer insulation film manufacturing method and interlayer insulation film

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees