JP5673562B2 - Semiconductor light emitting device manufacturing method, semiconductor light emitting device, and photosensitive composition used in semiconductor light emitting device manufacturing method - Google Patents

Description

  The present invention relates to a method for manufacturing a semiconductor light emitting device, a semiconductor light emitting device, and a photosensitive composition used for a method for manufacturing a semiconductor light emitting device.

  In the field of semiconductor light emitting devices, in order not to place the light emitting region of the active layer directly under the opaque electrode on the light extraction side, or to position the light emitting region of the active layer directly under the electrode on the light extraction side In order to alleviate local current concentration in the active layer and prevent light absorption in the semiconductor substrate, an insulating film called a current blocking layer or a current confinement layer is provided inside the semiconductor light emitting element to emit light. Techniques for improving efficiency are known (Patent Documents 1 to 8).

  The current blocking layer needs to be formed in various shapes and on various positions and layers, for example, a shape covered with a current diffusion layer, depending on the function of the semiconductor light emitting device. Conventionally, the current blocking layer has been formed by repeatedly performing processes such as CVD-TEOS and etching.

JP 2009-170655 A JP 2007-173530 A JP 2007-157778 A JP 2005-294870 A Japanese Patent Laid-Open No. 2004-296979 JP 2004-047662 A JP 2003-243703 A JP 2003-88641 A

  However, since the conventional current blocking layer formation process involves a plurality of processes, problems such as workability reduction, yield reduction, and cost increase occur, and etching and other processes cause defects in the formed semiconductor layer. As a result, there is a problem related to the process, such as a problem that the light emission efficiency is lowered due to the deterioration of the crystal quality due to the occurrence of.

  The present invention has been made to solve the above-described problems. In a method of manufacturing a semiconductor light emitting device having a current blocking layer, various shapes and shapes of current blocking layers are easily formed on various positions and layers. An object of the present invention is to provide a method for manufacturing a semiconductor light emitting device, a semiconductor light emitting device, and a photosensitive composition used in the method for manufacturing the semiconductor light emitting device.

  Examples of the present invention include the following aspects.

  <1> A method for manufacturing a semiconductor light emitting device having a current blocking layer, wherein a pattern obtained from a photosensitive composition is formed by a lithography method, and the pattern is used as a current blocking layer. (Hereinafter also referred to as “first embodiment”).

  <2> The semiconductor light emitting element is positioned below the electrode without being in contact with the electrode, the semiconductor layer, the current diffusion layer formed on the semiconductor layer, the electrode formed on the current diffusion layer, and And a method of manufacturing a semiconductor light-emitting device according to <1> (hereinafter also referred to as “second embodiment”), comprising a current blocking layer covered with the current diffusion layer.

  <3> The method for producing a semiconductor light-emitting element according to <1> or <2>, wherein the photosensitive composition contains a polysiloxane (A) and a photosensitive acid generator (B). (Hereinafter also referred to as “third embodiment”).

  <4> A semiconductor light-emitting device (hereinafter also referred to as “fourth embodiment”) obtained by the method for manufacturing a semiconductor light-emitting device according to any one of <1> to <3>.

  <5> A photosensitive composition (hereinafter also referred to as “fifth embodiment”), which is used in the method for producing a semiconductor light-emitting device according to <1> or <2>.

  <6> The photosensitive composition as described in <5> above, which contains a polysiloxane (A) and a photosensitive acid generator (B) (hereinafter also referred to as “sixth embodiment”).

<7> It has a current blocking layer that is 50% or less when the integration ratio of the signal derived from Q4 obtained by measurement by ²⁹ Si-NMR by DD-MAS method is 100%. A semiconductor light emitting device characterized.

<8> The semiconductor light-emitting device according to <7>, further including a current blocking layer showing a signal derived from T when measured by ²⁹ Si-NMR by a DD-MAS method.

  According to the first embodiment, in a method of manufacturing a semiconductor light emitting device having a current blocking layer, currents of various shapes can be formed on various positions and layers without going through a process such as etching that has the above-described process problems. Since the blocking layer can be formed, the process problem can be solved.

  According to the second embodiment, since other layers formed after the current blocking layer is formed can be reduced, process damage (decrease in insulation) to the current blocking layer can be prevented when forming the other layers. .

  According to the third embodiment, in a semiconductor light emitting device mainly composed of an inorganic component such as an LED or a semiconductor laser, since the element component is close to the other layer in contact with the current blocking layer, the other layer in contact with the current blocking layer. A current blocking layer having excellent adhesion to the substrate can be formed. For this reason, the problem concerning the process in the manufacturing method of a semiconductor light-emitting device can be solved. Furthermore, since the target shape can be accurately formed in the semiconductor layer having a step, the process margin can be widened.

  According to the fourth embodiment, since the semiconductor light-emitting element is obtained by the method for manufacturing a semiconductor light-emitting element in which the problem relating to the process is solved, the semiconductor light-emitting element having excellent performance such as luminous efficiency is obtained.

  According to the fifth embodiment, the present invention can be usefully applied to a method for manufacturing a semiconductor light emitting device in which a problem relating to a process is solved.

  According to the sixth embodiment, a current blocking layer having excellent adhesion to other layers in contact with the current blocking layer can be formed, so that it is more useful for a method for manufacturing a semiconductor light emitting device in which the problems associated with the process are eliminated. Can be applied to.

FIG. 3 is a cross-sectional view of an example of a current blocking semiconductor light emitting element. Sectional drawing explaining an example of the manufacturing method of a semiconductor light-emitting device. The schematic diagram explaining an example of the shape of the pattern used for evaluation of a pattern shape. The schematic diagram explaining an example of the base material for electrical insulation evaluation. ²⁹ Si-NMR chart by DD-MAS method of Example 12. The ²⁹ Si-NMR chart figure by DD-MAS method of Example 13. FIG. The ²⁹ Si-NMR chart figure by DD-MAS method of Example 14. FIG. The ²⁹ Si-NMR chart figure by DD-MAS method of Example 15. FIG. The ²⁹ Si-NMR chart figure by DD-MAS method of Example 16. FIG.

[1] Semiconductor Light-Emitting Element The semiconductor light-emitting element of the present invention relates to the fourth embodiment, and is obtained by “[2] Manufacturing method of semiconductor light-emitting element” described later. In the method for manufacturing a semiconductor light emitting device, various procedures are conceivable depending on the configuration and shape of the semiconductor light emitting device. The semiconductor light emitting device of the present invention is formed by “[2-1] Method for forming current blocking layer” described later. The current blocking layer is not particularly limited.

  Examples of the configuration and shape of the current blocking layer of the semiconductor light emitting device include a current blocking structure and a current confinement structure. Examples of the configuration and shape of the electrodes of the semiconductor light emitting device include a normal type in which the upper electrode and the lower electrode face each other and a trench type in which the upper electrode and the lower electrode are in the same direction. Moreover, as a structure and shape of the semiconductor layer of a semiconductor light-emitting device, a double heterojunction type and a quantum well junction type are mentioned, for example.

  Specific examples of the configuration and shape of the semiconductor light-emitting element include, for example, JP 2009-170655 A, JP 2007-173530 A, JP 2007-157778 A, JP 2005-294870 A, and JP 2004. JP-A No. 296979, JP-A No. 2004-047662, JP-A No. 2003-243703, JP-A No. 2003-88641, JP-A No. 2002-329885, JP-A No. 2002-066421, JP-A No. 2001-274456. JP, 2001-196629, 2001-177147, 2001-068786, 2000-261029, 2000-124502, 10-294531 , JP 09-31442 A and JP Configurations and shapes according to 09-237916 JP thereof.

  In the present invention, the term “current blocking layer” refers to a current blocking layer in a narrow sense that is used to prevent the light emitting region of the active layer from being positioned directly below an opaque electrode on the light extraction side. The current confinement is used to reduce local current concentration on the active layer by preventing the light emitting region of the active layer from being located directly below the electrode on the light extraction side, and to suppress light absorption in the semiconductor substrate. It means a layer including a layer.

  As a typical example of the semiconductor light emitting device of the present invention, FIG. 1 shows a cross-sectional view of a current blocking semiconductor light emitting device. The semiconductor light emitting element shown in FIG. 1 is also an example of the fourth embodiment according to the second embodiment.

  1 is provided on a sapphire substrate 100 in the order of a buffer layer 101, a semiconductor layer 110, a current diffusion layer 120, and an upper electrode 131. A current blocking layer 140 is provided so as to be positioned below the upper electrode without being in contact with the upper electrode 131 and covered with the current diffusion layer 120. The semiconductor layer 110 is a double heterojunction type, and is provided on the buffer layer 101 in the order of an n-type cladding layer 111, an active layer 112, and a p-type cladding layer 113. The lower electrode 132 is provided on a part of the n-type cladding layer and is provided in the same direction as the upper electrode 131.

  In the semiconductor light emitting device of FIG. 1, since the upper electrode 131 side is a light emitting surface, the current diffusion layer is a transparent electrode such as tin-doped indium oxide.

  The buffer layer 101, the semiconductor layer 110, the current diffusion layer 120, the upper electrode 131, and the lower electrode may be formed by a known method such as a vapor phase epitaxial growth method, a liquid phase epitaxial growth method, a hydride vapor phase growth method, or a metal organic vapor phase growth method ( MOCVD method), molecular beam epitaxy method (MBE method), metalorganic molecular beam epitaxy method (MOMBE method), sputtering method, etc., and then, if necessary, formed by etching or grinding using resist as a mask Can do. The current blocking layer can be formed by “[2-1] Method for forming current blocking layer” described later.

  In addition to the various layers described above, depending on the configuration and shape of the semiconductor light emitting device, a reflective layer used for amplifying light can be formed, and a substrate other than a sapphire substrate can be used.

  In particular, the current blocking layer often has various shapes. For example, you may have shapes, such as quadratic prisms, such as a rectangular parallelepiped and a rectangular parallelepiped, and a cylinder and a cone. In the present invention, a pattern obtained from the photosensitive composition is formed by lithography, and the pattern is used as a current blocking layer. Therefore, the current blocking layer can be processed into various shapes.

[2] Method for Manufacturing Semiconductor Light-Emitting Element In the method for manufacturing a semiconductor light-emitting element of the present invention, various procedures can be considered depending on the configuration and shape of the semiconductor light-emitting element. As long as the current blocking layer is formed by the method described in “[2-1] Method for Forming Current Blocking Layer”, it is not particularly limited. That is, the manufacturing method of the semiconductor light emitting device of the present invention is the same as the manufacturing method described in the literature cited in the above-mentioned “[1] Semiconductor light emitting device”. Various embodiments can be applied depending on the configuration and shape of the semiconductor light-emitting element, except that the forming method described in 1 is used.

  As a representative example of the method for producing a semiconductor light emitting device of the present invention, FIG. 2 shows a method for producing a current blocking semiconductor light emitting device (nitride semiconductor light emitting device). The method for manufacturing the semiconductor light emitting element shown in FIG. 2 is also an example of the second embodiment.

  First, as shown in FIG. 2A, a buffer layer 201, an n-type cladding layer 211 such as n-type GaN, and an active layer 212 such as InGaN / GaN are formed on the sapphire substrate 200 by metal organic chemical vapor deposition. , And a semiconductor layer such as a p-type cladding layer 213 such as p-type GaN is grown sequentially.

  Next, a resist mask (not shown) is formed on the substrate of FIG. 2A in order to expose the surface of the n-type cladding layer 211 forming the lower electrode 232, and the cross-sectional view of FIG. As shown, the surface of the n-type cladding layer 211 is exposed by removing a part of the semiconductor layer 210 where the resist mask (not shown) is not formed. Thereafter, the resist mask (not shown) is removed.

  Next, as shown in FIG. 2C, the current blocking layer 240 is formed on the p-type cladding layer 213 by the current blocking layer forming method described in “[2-1] Current blocking layer forming method” below. To do. Thereafter, a current diffusion layer 220 made of tin-doped indium oxide is formed so as to cover the current blocking layer 240.

  Next, in order to form the upper electrode 231 on the current diffusion layer 220 and the lower electrode 232 on the n-type cladding layer 211, after forming a resist pattern, the upper electrode 231 and the lower electrode 232 are formed by vacuum evaporation or the like. A current blocking type semiconductor light emitting device (FIG. 2D) can be manufactured.

  In the current blocking type semiconductor light emitting device manufacturing method of FIG. 2, the manufacturing is performed in the order of (a), (b), (c), and (d) in the above description, but is not limited to this order. It is possible to change the order as appropriate. A protective film may be formed to protect the semiconductor layer.

[2-1] Method for Forming Current Blocking Layer The method for forming the current blocking layer in the method for producing a semiconductor light emitting device of the present invention is to form a pattern obtained from a photosensitive composition by lithography, and use the pattern as a current blocking layer. It is what. Here, the lithography method forms a pattern by selectively irradiating the coating film obtained from the photosensitive composition with radiation (there is no limitation on the wavelength) through a mask, if necessary, and then developing. It is a general term for methods to do.

  First, a photosensitive composition is applied on a substrate, and in the case of a photosensitive composition containing a volatile component such as a solvent, the solvent is volatilized to form a coating film. The details of the photosensitive composition will be described later in “[3] Photosensitive composition”. The substrate is a layer for forming a current blocking layer on a layer such as a semiconductor layer or a current diffusion layer, and is appropriately selected depending on the configuration and shape of the semiconductor light emitting device. As a method for applying the photosensitive composition, various application methods such as a dipping method, a spray method, a bar coating method, a roll coating method, and a spin coating method can be employed. The thickness of the coating film can be appropriately controlled by adjusting the coating means, the solid content concentration of the resin composition solution, the viscosity, and the like. For example, in the case of the spin coating method, the thickness of the coating film can be controlled by changing the rotation speed.

Next, the obtained coating film is exposed through a mask having a desired pattern as necessary. Examples of radiation used for exposure include ultraviolet rays and electron beams emitted from low-pressure mercury lamps, high-pressure mercury lamps, metal halide lamps, g-line steppers, h-line steppers, i-line steppers, KrF steppers, ArF steppers, EB exposure apparatuses, and the like. And laser beam. The exposure amount can be appropriately set depending on the light source used, the film thickness of the coating film, and the like. For example, in the case of ultraviolet rays irradiated from a high-pressure mercury lamp, the film thickness is 0.05 to 50 μm. It can be about 20,000 J / m ² .

  After the exposure, a heat treatment (hereinafter, this heat treatment is also referred to as “PEB”) is usually performed on the exposed coating film. By performing PEB, the acid generated by exposure can be made to act more efficiently.

  The PEB conditions vary depending on the components of the photosensitive composition used for forming the coating film, the solid content concentration, the film thickness of the coating film, etc., but are usually 50 to 180 ° C., preferably 60 to 150 ° C. About 60 minutes.

  Thereafter, a pattern can be formed by development. For example, in the case of a positive photosensitive composition, an exposed portion is developed, and in the case of a negative photosensitive composition, an unexposed portion is developed with an alkaline developer, etc., and dissolved and removed to form a desired pattern. can do.

  Examples of the development method include shower development, spray development, immersion development, and paddle development. The development conditions are usually 20 to 40 ° C. and about 0.5 to 10 minutes.

  Moreover, as an alkaline developing solution, for example, an alkaline compound in which an alkaline compound such as sodium hydroxide, potassium hydroxide, ammonia water, tetramethylammonium hydroxide and choline is dissolved in water so as to have a concentration of 1 to 10% by mass is used. An aqueous solution may be mentioned. In addition, an appropriate amount of a water-soluble organic solvent such as methanol and ethanol, a surfactant, and the like can be blended in the alkaline aqueous solution. In addition, after developing with an alkaline developer, it is usually washed with water and dried.

  Further, heat treatment may be performed after development. By this heat treatment, when the obtained pattern is used as a current blocking layer, the characteristics as the current blocking layer, such as insulation, can be sufficiently exhibited.

  Such curing conditions are not particularly limited, but are usually 50 to 600 ° C., more preferably about 1 minute to 10 hours. Moreover, heat processing are normally performed under nitrogen or air | atmosphere.

  It can also be heated in multiple stages. By heating in multiple stages, sudden volatilization of solvents and the like contained in the pattern after development is suppressed, and in the pattern after development, crosslinking of components in the photosensitive composition is performed. A reaction such as a reaction can be moderately advanced. Thereby, the current blocking layer obtained by the heat treatment can be prevented from being damaged by a process such as a heat treatment performed when another layer formed after the formation of the current blocking layer is formed.

  As a heating method in multiple stages, for example, in the case of heating in two stages, the first stage is heated at a temperature of 100 to 250 ° C. for about 5 minutes to 2 hours, and the second stage is 10 to a temperature of 250 to 500 ° C. A method of heating for about 10 minutes to 10 minutes is mentioned.

  In the present invention, the pattern obtained as described above is used as a current blocking layer. In this way, by forming a pattern obtained from the photosensitive composition by lithography, and using the pattern as a current blocking layer, various positions and Various shapes of current blocking layers can be formed on the layer.

  In particular, if the current blocking layer is formed as in the second embodiment, it is possible to reduce the formation of other layers formed after the current blocking layer, for example, other layers such as a current diffusion layer. For this reason, for example, vapor phase epitaxy, liquid phase epitaxy, hydride vapor phase epitaxy, metalorganic vapor phase epitaxy (MOCVD), molecular beam epitaxy (MBE), organometallic molecular beam epitaxy (MOMBE) ) And a sputtering method or the like to form another layer, it is possible to prevent an adverse effect (process damage) on the formed current blocking layer such as a decrease in insulation.

  Further, if the current blocking layer is formed using a photosensitive composition containing polysiloxane (A) and a photosensitive acid generator (B) as in the third embodiment, such as LED and semiconductor laser. In a semiconductor light-emitting device containing an inorganic component as a main component, the element component can be brought close to another layer in contact with the current blocking layer. For this reason, the current blocking layer obtained by the third embodiment has excellent adhesion to other layers in contact with the current blocking layer.

  Further, according to the third embodiment, since a transparent coating film can be formed, it is possible to solve the problem of depth of focus, which is a problem during exposure. For this reason, when forming a coating film with irregular depth of focus, such as a semiconductor layer with a step, and exposing the coating film to form a pattern, the target shape is more accurate than other photosensitive compositions. Can be formed.

[3] Photosensitive Composition The photosensitive composition used in the method for producing a semiconductor light emitting device of the present invention (hereinafter also simply referred to as “photosensitive composition”) is any material that can form a pattern by lithography. It can be used without restriction.

  This photosensitive composition may be a negative photosensitive composition (hereinafter also simply referred to as “negative type”) or a positive photosensitive composition (hereinafter also simply referred to as “positive type”). The negative type is a photosensitive composition in which a portion irradiated with radiation remains as a post-development pattern in a coating film obtained from the photosensitive composition. On the other hand, the positive type is a photosensitive composition in which a non-irradiated portion of the radiation remains as a post-development pattern in a coating film obtained from the photosensitive composition.

  In the present invention, since the pattern obtained from the photosensitive composition by the lithography method remains in the semiconductor light emitting device as a current blocking layer, the pattern is required to have stability against light and heat such as light resistance and heat resistance. For this reason, the negative type from which the pattern excellent in the stability with respect to light and a heat | fever is obtained is preferable.

  This photosensitive composition usually contains a polymer. This polymer may be an organic polymer or an inorganic polymer. Here, the organic polymer means a polymer containing a skeleton mainly composed of carbon (for example, a skeleton composed of C, C and O, or C and N), and the inorganic polymer is It means a polymer containing a skeleton mainly composed of an element other than carbon (for example, a skeleton composed of Si, Si and O, Ti and O, Si and C, or the like).

  That is, as the photosensitive composition of the present invention, an organic photosensitive composition containing an organic polymer as a main component (hereinafter, also simply referred to as “organic”) and an inorganic polymer as a main component. And an inorganic photosensitive composition (hereinafter, also simply referred to as “inorganic”).

  In addition, in the photosensitive composition of this invention, an inorganic type is preferable from the point of affinity with other layers, such as a semiconductor layer, and adhesiveness. Further, as described above, an inorganic system that can provide a pattern having excellent stability to light and heat is preferable. In particular, in a semiconductor light-emitting device mainly composed of an inorganic component such as an LED or a semiconductor laser, since the element component is close to other layers in contact with the current blocking layer, other layers in contact with the current blocking layer are formed by using an inorganic system. A current blocking layer having excellent adhesion to the substrate can be formed. Furthermore, since a transparent coating film can be formed, the problem of the depth of focus which becomes a problem during exposure can be solved, which is preferable.

  In the case of an organic type, when the total amount of the polymer contained in the photosensitive composition is 100% by mass, the organic polymer is contained in an amount of 50% by mass or more (may be 100% by mass). It is. That is, the inorganic polymer is not included, or even if included, it is less than 50% by mass. Similarly, in the case of an inorganic type, when the total amount of the polymer contained in the photosensitive composition is 100% by mass, the inorganic polymer is contained in an amount of 50% by mass or more (may be 100% by mass). Is. That is, the organic polymer is not contained, or even if contained, it is less than 50% by mass.

  Therefore, as the photosensitive composition of the present invention, a positive type and organic type photosensitive composition (hereinafter also referred to as “positive organic type”), a positive type and inorganic type photosensitive composition (hereinafter referred to as “positive type”). Also referred to as “inorganic”), negative and organic photosensitive compositions (hereinafter also referred to as “negative-organic”), negative-type and inorganic photosensitive compositions (hereinafter referred to as “negative-inorganic”). 4). Among these, negative-inorganic systems are preferred for the reasons described above.

  Examples of the positive organic type include, for example, Japanese Patent Application Laid-Open No. 2009-133924, Japanese Patent Application Laid-Open No. 2001-281862, Japanese Patent Application Laid-Open No. 11-106606, Japanese Patent Application Laid-Open No. 2008-192774, and Japanese Patent Application Laid-Open No. 2004-309776. The composition described in Japanese Unexamined Patent Publication No. 2004-125815 can be used.

  More specifically, an alkali-insoluble organic polymer whose alkali solubility is changed by the action of an acid and a photosensitive acid generator (for example, a photosensitive acid generator (B) described later, the same shall apply hereinafter). Compositions containing: Compositions containing an alkali-soluble organic polymer and a naphthoquinone diazide compound, which use the alkali solubility inhibiting effect of naphthoquinone diazide.

  As the positive-inorganic system, for example, compositions described in JP-A-2007-279073 and 2007-182555 can be used.

  More specifically, a composition containing a hardly alkali-soluble inorganic polymer whose alkali solubility is changed by the action of an acid and a photosensitive acid generator; an alkali-soluble inorganic polymer; a naphthoquinone diazide compound; And a composition that utilizes the alkali solubility inhibiting effect of naphthoquinonediazide.

  Examples of the negative organic system include, for example, JP 2007-293306 A, JP 2003-215802 A, JP 2004-10660 A, JP 2003-258422 A, JP 2004-10660 A, and the like. Compositions described in Japanese Unexamined Patent Publication No. 2004-171026 can be used.

  More specifically, a composition containing an alkali-soluble organic polymer, a compound having a radical polymerizable unsaturated bond group (for example, a methacryl group or a vinyl group), and a radiation-sensitive radical generator. A composition containing an alkali-soluble organic polymer, a compound that undergoes a crosslinking reaction by the action of an acid (for example, a compound having an epoxy group or a melamine compound), and a photosensitive acid generator; And a composition containing an organic polymer having a radical-polymerizable unsaturated bond group (for example, methacryl group or vinyl group) and a radiation-sensitive radical generator; an alkali-soluble and crosslinking reaction by the action of an acid. Examples thereof include a composition containing an organic polymer having a proceeding group (for example, an epoxy group) and a photosensitive acid generator.

  Examples of the negative-inorganic system include compositions described in JP-A No. 2004-212983, WO 04/111734, WO 05/036269, JP-A 2004-198906, and JP-A 2005-266474. Can be used.

  More specifically, a composition comprising an alkali-soluble inorganic polymer, a compound having a radical-polymerizable unsaturated bond group (for example, a methacryl group or a vinyl group), and a radiation-sensitive radical generator. A composition containing an alkali-soluble inorganic polymer, a compound that undergoes a crosslinking reaction by the action of an acid (for example, a compound having an epoxy group or a melamine compound), and a photosensitive acid generator; And a composition containing an inorganic polymer having a radical polymerizable unsaturated bond group (for example, a methacryl group or a vinyl group) and a radiation-sensitive radical generator; an alkali-soluble and crosslinking reaction by the action of an acid. A composition containing an inorganic polymer having a group (for example, an epoxy group) and a photosensitive acid generator; a metal alkoxide condensate; and a photosensitive acid generator; Composition, etc. containing the like.

  Among these, the negative-inorganic system is preferably a composition containing a metal alkoxide condensate and a photosensitive acid generator, and the metal alkoxide condensate is preferably a polysiloxane. It is more preferable in that it is excellent in the affinity and the adhesiveness, and is stable in terms of light and heat. In addition, in order to increase luminous efficiency, the surface of the semiconductor layer is often not flat but uneven. In this case, it is necessary to form a coating film made of the photosensitive composition on the uneven surface. When the metal alkoxide condensate is polysiloxane, the resulting coating film has high transparency, which is preferable from the viewpoint that a desired pattern can be accurately formed even on an uneven surface.

  In addition, the above-mentioned alkali-soluble polymer is a polymer having a solubility in a 2.38 mass% tetraammonium hydroxide aqueous solution (alkaline liquid) of the coating film made of the polymer of 100 kg / second or more. It is. Similarly, a poorly alkali-soluble polymer is a polymer having a solubility of a coating film made of the polymer in a 2.38 mass% tetraammonium hydroxide aqueous solution (alkaline liquid) of less than 100 kg / sec. It is.

  Hereinafter, the photosensitive composition containing polysiloxane (A) and the photosensitive acid generator (B), which is the sixth embodiment, will be described.

[3-1] Sixth Embodiment The polysiloxane (A) is preferably a polymer obtained by condensing a silane compound. More specifically, _a silane compound represented by R _a Si (OR ¹ ) _4-a (hereinafter referred to as “compound (a1)”) and a silane compound represented by Si (OR ² ) ₄ (hereinafter referred to as “compound”). It is preferably a polymer obtained by condensing at least one silane compound selected from (a2) ".

In the compound (a1), R represents a hydrogen atom, a fluorine atom, a linear or branched alkyl group having 1 to 5 carbon atoms, a cyano group, a cyanoalkyl group, or an alkylcarbonyloxy group, and R ¹ represents Represents a monovalent organic group, and a represents an integer of 1 to 3; In the compound (a2), R ² represents a monovalent organic group.

Examples of the monovalent organic group in R ¹ of the compound (a1) include an alkyl group, an alkenyl group, an aryl group, an allyl group, and a glycidyl group.

  As the compound (a1), methyltrimethoxysilane, methyltriethoxysilane, methyltri-n-propoxysilane, methyltri-iso-propoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, dimethyldimethoxysilane, dimethyldiethoxysilane, Diethyldimethoxysilane, diethyldiethoxysilane, vinyltrimethoxysilane, phenyltrimethoxysilane and the like are preferable.

As the monovalent organic group in R ² of the compound (a2), the monovalent organic group in R ¹ of the compound (a1) can be applied as it is. However, it may be different may be the same as R ¹ R ² with a compound of the compound (a2) (a1).

  As the compound (a2), tetramethoxysilane, tetraethoxysilane, tetra-n-propoxysilane, tetra-iso-propoxysilane, tetra-n-butoxysilane, tetra-sec-butoxysilane, tetra-tert-butoxysilane, tetra Examples include phenoxysilane. Among these, tetramethoxysilane and tetraethoxysilane are preferable.

As the hydrolyzable silane compound constituting the polysiloxane (A), only the compound (a1) and the compound (a2) may be used, but if necessary, R ³ _x (R ⁴ O) _3-x Si _{^{- (R 7) z -Si (}} OR 5) 3-y R 6 hydrolyzable silane compound represented by _y (. hereinafter "compound (a3)" hereinafter) may be used in combination.

In the compound (a3), R ^{3 to} R ⁶ are the same or different and each represents a monovalent organic group, x and y are the same or different and represent a number of 0 to 2, R ⁷ is an oxygen atom, phenylene Represents a group or a group represented by — (CH ₂ ) _n — (wherein n is an integer of 1 to 6), and z represents 0 or 1.

As the monovalent organic group in R ^{3 to} R ⁶ of the compound (a3), the monovalent organic group in R ¹ of the compound (a1) can be applied as it is. However, it may be different may be respectively same as the R ¹ of R ³ to R ⁶ and the compound of the compound (a3) (a1).

  Among the compounds (a3), the compound (a3) where z = 0 is hexamethoxydisilane, hexaethoxydisilane, 1,1,2,2-tetramethoxy-1,2-dimethyldisilane, 1,1,2 , 2-tetraethoxy-1,2-dimethyldisilane, 1,1,2,2-tetramethoxy-1,2-diphenyldisilane, 1,2-dimethoxy-1,1,2,2-tetramethyldisilane, , 2-diethoxy-1,1,2,2-tetramethyldisilane, 1,2-dimethoxy-1,1,2,2-tetraphenyldisilane, 1,2-diethoxy-1,1,2,2-tetra Phenyldisilane and the like are preferable.

  Among the compounds (a3), the compound (a3) in which z = 1 is bis (trimethoxysilyl) methane, bis (triethoxysilyl) methane, 1,2-bis (trimethoxysilyl) ethane, 1,2 -Bis (triethoxysilyl) ethane, 1- (dimethoxymethylsilyl) -1- (trimethoxysilyl) methane, 1- (diethoxymethylsilyl) -1- (triethoxysilyl) methane, 1- (dimethoxymethylsilyl) ) -2- (trimethoxysilyl) ethane, 1- (diethoxymethylsilyl) -2- (triethoxysilyl) ethane, bis (dimethoxymethylsilyl) methane, bis (diethoxymethylsilyl) methane, 1,2- Bis (dimethoxymethylsilyl) ethane, 1,2-bis (diethoxymethylsilyl) ethane, 1,2-bis (trimethoxy) Silyl) benzene, 1,2-bis (triethoxysilyl) benzene, 1,3-bis (trimethoxysilyl) benzene, 1,3-bis (triethoxysilyl) benzene, 1,4-bis (trimethoxysilyl) Benzene, 1,4-bis (triethoxysilyl) benzene and the like are preferable.

  When the total of all the structural units contained in the polysiloxane (A) is 100 mol%, the content ratio of the structural units derived from the compound (a1) is preferably 30 to 100 mol%, and 60 to 100 More preferably, mol% is more preferable, and 70-100 mol% is still more preferable. When the content ratio of the structural unit derived from the compound (a1) is 30 to 100 mol%, the compatibility with other layers such as a semiconductor layer and adhesion are excellent, and a target pattern can be accurately formed even on an uneven surface. It is preferable in that it can be formed.

  The content of the structural unit derived from the compound (a2) is preferably 0 to 70 parts by mass, more preferably 0 to 40 parts by mass, when the content of the structural unit derived from the compound (a1) is 100 parts by mass. preferable. When the content ratio of the structural unit derived from the compound (a2) is 0 to 70 parts by mass, the affinity and adhesion to other layers such as a semiconductor layer are excellent, and a target pattern can be accurately formed even on an uneven surface. It is preferable in that it can be formed.

  The content of the structural unit derived from the compound (a3) is preferably 50 parts by mass or less, and 0 to 40 parts by mass when the content of the structural unit derived from the compound (a1) is 100 parts by mass. More preferably, 0-30 mass parts is still more preferable. The effect by including the structural unit derived from each compound of the compound (a1) and compound (a2) in polysiloxane in pattern formation as the content rate of the structural unit derived from a compound (a3) is 50 mass parts or less The effect including the structural unit derived from the compound (a3) can be more effectively obtained without inhibiting the above.

  The polystyrene-reduced weight average molecular weight of the polysiloxane (A) by size exclusion chromatography (SEC) method is preferably 1000 to 100,000, more preferably 1000 to 10,000. When the weight average molecular weight is 1000 to 100,000, it is possible to achieve both excellent coating properties and high storage stability while suppressing unnecessary gelation before curing.

  In order to adjust the curing characteristics of the photosensitive composition, silsesquioxanes having a crosslinking group, for example, octa [(1,2-epoxy-4-cyclohexyl) dimethylsiloxy] silsesquioxane, octa [( 3-glycidoxypropyl) dimethylsiloxy] silsesquioxane or the like may be added.

  In addition, after the condensation reaction, for example, it is preferable to perform a removal treatment of reaction by-products such as lower alcohols such as methanol and ethanol. Thereby, since the purity of the below-mentioned solvent that is often used is usually increased, it is possible to obtain more excellent coating properties and excellent storage stability.

  The polysiloxane (A) may be used after being isolated from the polymer solution, or may be used as it is. In addition, when using as a polymer solution, the solvent substitution of the below-mentioned solvent may be carried out as needed.

  The photosensitive acid generator (B) (hereinafter also referred to as “acid generator (B)”) is a component that generates an acid upon exposure. By containing the acid generator (B), the acid generated from the acid generator (B) promotes the crosslinking of the polysiloxane (A), and as a result, the curing of the film proceeds and the mechanical properties are increased. It is possible to form an excellent pattern. Examples of the light source for exposure include radiation (ArF excimer laser (wavelength 193 nm) or KrF excimer laser (wavelength 248 nm)) such as a charged particle beam such as visible light, ultraviolet light, far ultraviolet light, X-ray, and electron beam. .

  As the acid generator (B), known compounds can be used. For example, the compounds described in JP-A-2008-192774, JP-A-2007-256935, and JP-A-2007-178903 are used. Can do.

  More specifically, onium salt compounds (including thiophenium salt compounds), halogen-containing compounds, diazoketone compounds, sulfone compounds, sulfonic acid compounds, diazomethane compounds, sulfonimide compounds, and the like can be used. As for an acid generator (B), only 1 type may be used and 2 or more types may be used together.

  Among the acid generators (B), an onium salt compound is preferable and a thiophenium salt compound is more preferable from the viewpoint of compatibility with the polysiloxane (A) and the resolution and sensitivity of the photosensitive composition.

  Examples of the onium salt compound include 1- (4,7-di-n-butoxynaphthalen-1-yl) tetrahydrothiophenium salt compound, 1- (4-n-butoxynaphthalen-1-yl) tetrahydrothiophenium. Thiophenium salt compounds such as 1- (6-n-butoxynaphthalen-2-yl) tetrahydrothiophenium salt compounds and 1- (3,5-dimethyl-4-hydroxyphenyl) tetrahydrothiophenium salt compounds; Iodonium salt compounds such as bis (4-t-butylphenyl) iodonium salt compounds and diphenyliodonium salt compounds; triphenylsulfonium salt compounds, 4-t-butylphenyldiphenylsulfonium salt compounds, 4-cyclohexylphenyldiphenylsulfonium salt compounds, 4 -Methanesulfonyl Sulfonium salt compounds such as E sulfonyl diphenyl sulfonium salt compound; phosphonium salt compound; diazonium salt compound; pyridinium salt compounds and the like.

  Although content of an acid generator (B) is not specifically limited, From a viewpoint of ensuring a sensitivity and resolution, it is 0.1-30 mass parts normally with respect to 100 mass parts of polysiloxane, and 0.1 -20 mass parts is preferable, and 0.1-15 mass parts is more preferable. In the preferred range, the sensitivity and resolution are excellent, transparency to radiation can be sufficiently obtained, and a good pattern shape can be obtained more easily.

  In the sixth embodiment, other components can be contained in addition to the above components. As other components, a solvent, an acid diffusion controller, a surfactant, a sensitizer, an acid proliferating agent, a crosslinking agent, an antihalation agent, a storage stabilizer, an antifoaming agent, and the like can be appropriately contained.

  The solvent is used so as to control the overall state (for example, viscosity) of the sixth embodiment so that the functions of the polysiloxane (A) and the acid generator (B) can be expressed well. As the solvent, an organic solvent or the like can be suitably used. For example, a ketone organic solvent such as methyl ethyl ketone or cyclohexanone; an ester solvent such as gamma butyrolactone; a glycol monoester such as propylene glycol monomethyl ether acetate or diethylene glycol monoethyl ether acetate Ether monoesters; alkyl ethers such as propylene glycol monomethyl ether and propylene glycol monoethyl ether; alkyl alcohols such as 4-methyl-2-pentanol and the like.

  The acid diffusion control agent has an action of controlling undesired chemical reaction in the non-irradiated region by controlling unnecessary diffusion of the acid generated by radiation from the photosensitive acid generator in the coating film. Examples of the acid diffusion controller include triethylamine, trioctylamine, 2-phenylimidazole, 2-phenylbenzimidazole, Nt-butoxycarbonyl-2-phenylbenzimidazole, etc. whose basicity does not change by irradiation with radiation or heating. Nitrogen-containing organic compounds are preferred.

  The surfactant is added to improve the flattening of the coating film, the flattening of the outer periphery of the substrate, the striation, and the like. Examples of such surfactants include silicon surfactants, fluorine surfactants, and acrylic surfactants. More specifically, F-top EF301, EF303, EF352 (manufactured by Tochem Products), MegaFuck F171, F172, F173 (manufactured by Dainippon Ink and Chemicals), Florard FC430, FC431 (manufactured by Sumitomo 3M), Surflon Fluorine-based surfactants such as S-381, S-382, SC101, SC102, SC103, SC104, SC105, SC106 (Asahi Glass Co., Ltd.), Footgent 250, 251, 222F, FTX-218 (Neos), SH Examples thereof include silicon surfactants such as -192, SH-193, FZ-3789, SF8427, and SH8400 (manufactured by Toray Dow Corning Silicon).

As described above, the semiconductor light emitting device of the present invention forms a pattern obtained from a photosensitive composition containing polysiloxane (A) and an acid generator (B) by lithography, and uses the pattern as a current blocking layer. Use. When the current blocking layer is measured by ²⁹ Si-NMR by the DD-MAS method, the integral ratio of the signal derived from Q4 is 50% or less when the total integral ratio is 100%.

Further, when the polysiloxane (A) is a polysiloxane obtained by condensing a mixture containing the compound (a1) and the compound (a2), the current blocking layer is measured by ²⁹ Si-NMR by the DD-MAS method. Then, a signal derived from T is obtained.

The signal derived from Q4 is a signal derived from a silicon atom in which four silicon atoms are bonded to another silicon atom via an oxygen atom, and a signal having a chemical shift in the range of −125 to −105 ppm. (The ²⁹ Si signal of silane of tetramethylsilane is 0 ppm).

The signal derived from T is a signal obtained by combining the signal derived from T1, the signal derived from T2, and the signal derived from T3, and a signal having a chemical shift in the range of −80 to −40 ppm (the silane of tetramethylsilane). ²⁹ Si signal is 0 ppm).

  The signal derived from T1 is that one silicon atom is bonded to another silicon atom via an oxygen atom, two hydrogen atoms or carbon atoms are bonded via an oxygen atom, and one hydrogen atom or carbon atom is bonded. A signal derived from a silicon atom in a bonded state is shown. A signal derived from T2 means that two silicon atoms are bonded to another silicon atom through an oxygen atom, one hydrogen atom or a carbon atom is bonded through an oxygen atom, and one hydrogen atom or a carbon atom is bonded. A signal derived from a silicon atom in a bonded state is shown. The signal derived from T3 indicates a signal derived from a silicon atom in which three silicon atoms are bonded to another silicon atom via an oxygen atom and are bonded to one hydrogen atom or carbon atom.

Details of the measurement conditions by ²⁹ Si-NMR by the DD-MAS method are as follows.
Device: Bruker, device name “AVANCE300”
Analysis method: 0.5 g of a powder sample was filled in a MAS rotor, and solid ²⁹ Si-NMR was measured by the DD-MAS method. The MAS rotation speed is 5 kHz, the repetition waiting time is 30 seconds, and the number of integration is 2800 times.

  Hereinafter, the embodiment of the present invention will be described more specifically with reference to examples. However, the present invention is not limited to these examples. “Parts” and “%” are based on mass unless otherwise specified.

[1] Preparation of photosensitive composition [Examples 1 to 11]
As shown in Table 1 below, photosensitive compositions of Examples 1 to 11 were obtained by blending and dissolving the respective components.

  Details of each component in Table 1 are as follows.

<Polysiloxane>
A1 component:
In a flask purged with nitrogen, 1 part of a 20% maleic acid aqueous solution and 69 parts of ultrapure water were added and heated to 65 ° C. Next, a solution obtained by mixing 25 parts of tetramethoxysilane, 55 parts of methyltrimethoxysilane, 36 parts of vinyltrimethoxysilane and 14 parts of propylene glycol monoethyl ether was dropped into the reaction vessel over 1 hour, and stirred at 65 ° C. for 2 hours. I let you. The reaction solution was returned to room temperature to obtain polysiloxane A1.

A2 component:
In a flask purged with nitrogen, 1 part of a 20% maleic acid aqueous solution and 69 parts of ultrapure water were added and heated to 65 ° C. Next, a solution obtained by mixing 20 parts of tetramethoxysilane, 55 parts of methyltrimethoxysilane, 30 parts of allyltrimethoxysilane and 14 parts of propylene glycol monoethyl ether was dropped into the reaction vessel over 1 hour and stirred at 65 ° C. for 2 hours. I let you. The reaction solution was returned to room temperature to obtain polysiloxane A2.

A3 component:
In a flask purged with nitrogen, 67 parts of methyltrimethoxysilane, 19 parts of tetraethoxysilane and 130 parts of propylene glycol monoethyl ether were added and stirred, and then 240 parts of 0.1% oxalic acid aqueous solution was added at 60 ° C. The solution was dropped into the reaction vessel over time, and the temperature of the solution was stirred at 85 ° C. for 4 hours. The reaction solution was returned to room temperature to obtain polysiloxane A3.

A4 component:
After adding 0.05 parts of oxalic acid, 20 parts of methyltrimethoxysilane, 7 parts of tetraethoxysilane, 29 parts of phenyltrimethoxysilane and 25 parts of 1-methoxy-2-propanol in a flask purged with nitrogen, and stirring. The temperature of the solution was heated to 60 ° C. Next, 18 parts of distilled water was added dropwise, and after completion of the addition, the solution was stirred at 100 ° C. for 3 hours. The reaction solution was returned to room temperature to obtain polysiloxane A4.

A5 component:
In a flask purged with nitrogen, 60 parts of methyltrimethoxysilane, 40 parts of tetraethoxysilane and 20 parts of 1-methoxy-2-propanol were added and stirred, and then the temperature of the solution was heated to 60 ° C. Next, 38 parts of a 0.1% oxalic acid aqueous solution was added dropwise, and after completion of the addition, the solution was stirred at 100 ° C. for 2 hours. The reaction solution was returned to room temperature to obtain polysiloxane A5.

A6 component:
In a flask purged with nitrogen, 70 parts of methyltrimethoxysilane, 20 parts of tetraethoxysilane and 22 parts of 1-methoxy-2-propanol were added and stirred, and then the temperature of the solution was heated to 60 ° C. Next, 39 parts of a 0.1% oxalic acid aqueous solution was added dropwise, and after completion of the addition, the solution was stirred at 100 ° C. for 2 hours. The reaction solution was returned to room temperature to obtain polysiloxane A6.

A7 component:
In a flask purged with nitrogen, 40 parts of methyltrimethoxysilane, 60 parts of tetraethoxysilane and 18 parts of 1-methoxy-2-propanol were added and stirred, and then the temperature of the solution was heated to 60 ° C. Subsequently, 37 parts of a 0.1% oxalic acid aqueous solution was added dropwise, and after completion of the addition, the solution was stirred at 100 ° C. for 2 hours. The reaction solution was returned to room temperature to obtain polysiloxane A7.

<Photosensitive acid generator>
B1 component: 1- (4-n-butoxynaphthalen-1-yl) tetrahydrothiophenium trifluoromethanesulfonate.
Component B2: triphenylsulfonium nonafluoro-n-butanesulfonate.
B3 component: 1- (4,7-di-n-butoxynaphthalen-1-yl) -tetrahydrothiophenium trifluoromethanesulfonate.
B4 component: 2- [2- (furan-2-yl) ethenyl] -4,6-bis (trichloromethyl) -s-triazine.

<Acid diffusion inhibitor>
C1 component: 2-phenylbenzimidazole.
C2 component: trioctylamine.
Component C3: Nt-butoxycarbonyl-2-phenylbenzimidazole.

<Surfactant>
D1 component: dimethylpolysiloxane-polyoxyalkylene copolymer (silicone surfactant, manufactured by Toray Dow Corning Silicon, trade name “SH8400”).

<Solvent>
E1 component: propylene glycol monoethyl ether.
E2 component: Propylene glycol monomethyl ether.

[2] Formation of current blocking layer The photosensitive compositions of Examples 1 to 11 were spin coated on a silicon wafer or GaN substrate, and then heated at 100 ° C. for 5 minutes using a hot plate to a thickness of 0.5 μm. A coating film was prepared. Next, ultraviolet rays (wavelength 365 nm) irradiated from a high-pressure mercury lamp were exposed through various pattern masks using an aligner (manufactured by Karl Suss, model “MA-100”). Then, it heated for 10 minutes at 120 degreeC using the hotplate (PEB), was immersed for 60 second at 23 degreeC using the tetramethylammonium hydroxide aqueous solution of 2.38 mass% concentration, and developed. The obtained pattern was used as a current blocking layer. The target pattern shape is shown in FIG.

The surface state of each substrate is as follows.
Silicon wafer: A substantially flat silicon wafer substrate having a silicon oxide film of about 0.4 μm on the surface.
GaN substrate: p-type GaN substrate having protrusions with a height of 1.2 μm to 0.4 μm. The film thickness of the coating film in the case of a GaN substrate indicates the thickness from a protrusion having a height of 1.2 μm.

[3] Evaluation of Current Blocking Layer [3-1] Pattern Shape The shape of the current blocking layer formed on various substrates in “[2] Formation of current blocking layer” was observed with an electron microscope SEM, and the following criteria were used. Evaluated. The evaluation results are shown in Table 2.
Good: 80% or more of the area of the upper surface of the target pattern shape is formed.
Slightly good: Less than 80% and 60% or more of the area of the upper surface of the target pattern shape is formed.
Defect: Less than 60% of the area of the upper surface of the target pattern shape is formed.

[3-2] Adhesiveness The photosensitive compositions of Examples 1 to 11 were spin-coated on a silicon wafer and a GaN substrate, and then heated at 120 ° C. for 10 minutes using a hot plate to obtain a thickness of 0.5 μm. A coating film was prepared. The obtained film was stretched with a cellophane tape of JIS K5400-5-6 and evaluated by whether or not the coating film remained when the cellophane tape was peeled off. The evaluation criteria are as follows. The evaluation results are shown in Table 2.
Good: The coating film remains without peeling off.
Bad: The coating film is peeled off.

[3-3] Insulating properties The photosensitive compositions of Examples 1 to 11 were applied to the insulating evaluation substrate 3 having two copper foil patterns (copper foil thickness = 10 μm) as shown in FIG. It apply | coated and heated for 5 minutes at 100 degreeC using the hotplate, and the board | substrate which has a coating film whose thickness on the copper foil 2 is 10 micrometers was created. Then, it heated at 120 degreeC for 10 minute (s) using the convection oven, the coating film was hardened, and the film | membrane for insulation evaluation was formed. The volume resistivity (Ω · cm) of this film was defined as the initial insulating property. In addition, the volume of the film | membrane for the insulation evaluation between each electrode is 1.6 * 10 <^-8> cm < ^{3 >} . Thereafter, this film was baked at 400 ° C., and the volume resistivity (Ω · m) of the baked film was regarded as insulating properties after baking. The evaluation criteria for insulation are as follows. The evaluation results are shown in Table 2.
Good: Volume resistivity of 10 ¹⁴ Ω · cm or more.
Defect: Volume resistivity is less than 10 ¹⁴ Ω · cm.

[4] Semiconductor Light Emitting Element As described above, the current blocking layer obtained by lithography of the photosensitive compositions of Examples 1 to 11 can be easily formed in various shapes on various substrates. Therefore, a semiconductor light emitting device having good performance such as luminous efficiency can be obtained.

[5] Current blocking layer [Examples 12 to 16]
The photosensitive compositions of Examples 9 to 11 were coated on a silicon wafer so as to have a film thickness of 10 μm, and then heat-treated under the conditions shown in Table 3 below to obtain coating films. The obtained coating film was shaved and measured for ²⁹ Si-NMR by the DD-MAS method. The results are shown in Table 3. Details of measurement conditions for ²⁹ Si-NMR by the DD-MAS method are as follows.

Device: Bruker, device name “AVANCE300”
Analysis method: 0.5 g of a powder sample was filled in a MAS rotor, and solid ²⁹ Si-NMR was measured by the DD-MAS method. The MAS rotation speed is 5 kHz, the repetition waiting time is 30 seconds, and the number of integration is 2800 times.

DESCRIPTION OF SYMBOLS 1; Resin substrate 2; Copper foil 3; Base material 100, 200; Sapphire substrate 101, 201; Buffer layer 110, 210; Semiconductor layer 111, 211; N-type clad layer 112, 212; P-type cladding layer 120, 220; current diffusion layer 131, 231; upper electrode 132, 232; lower electrode 140, 240; current blocking layer

Claims (3)

In the method for producing a semiconductor light emitting device having a current blocking layer, a pattern obtained from the photosensitive composition is formed by a lithography method, and the pattern is used as a current blocking layer .
The photosensitive composition contains a polysiloxane (A) and a photosensitive acid generator (B);
A silane compound (a1) represented by the polysiloxane (A) represented by R _a Si (OR ¹ ) _4-a (R ¹ represents a monovalent organic group, a represents an integer of 1 to 3); A polymer obtained by condensing a silane compound (a2) represented by Si (OR ² ) ₄ (R ² represents a monovalent organic group),
The silane compound (a1) is methyltrimethoxysilane, methyltriethoxysilane, methyltri-n-propoxysilane, methyltri-iso-propoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, dimethyldimethoxysilane, dimethyldiethoxysilane. , Selected from the group consisting of diethyldimethoxysilane, diethyldiethoxysilane, vinyltrimethoxysilane, phenyltrimethoxysilane and allyltrimethoxysilane, and
The method for producing a semiconductor light emitting device , wherein the amount of the silane compound (a2) used is 14 to 150 parts by mass with respect to 100 parts by mass of the silane compound (a1) .   The semiconductor light emitting element is located below the electrode without being in contact with the electrode and the current diffused layer formed on the semiconductor layer, the current diffusion layer formed on the semiconductor layer, the electrode formed on the current diffusion layer, and the current The method for manufacturing a semiconductor light-emitting element according to claim 1, further comprising a current blocking layer covered with a diffusion layer. The semiconductor light emitting element characterized by obtained by the method of manufacturing a semiconductor device as claimed in any of claims 1-2.

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