TW200935607A - Ceramic MESFET device and a manufacturing method therefor - Google Patents

Ceramic MESFET device and a manufacturing method therefor

Info

Publication number
TW200935607A
TW200935607A TW097104511A TW97104511A TW200935607A TW 200935607 A TW200935607 A TW 200935607A TW 097104511 A TW097104511 A TW 097104511A TW 97104511 A TW97104511 A TW 97104511A TW 200935607 A TW200935607 A TW 200935607A
Authority
TW
Taiwan
Prior art keywords
ceramic
metal
semiconductor
semiconductor layer
effect transistor
Prior art date
Application number
TW097104511A
Other languages
English (en)
Chinese (zh)
Other versions
TWI360228B (cg-RX-API-DMAC10.html
Inventor
Zhao-Guang Liao
Wen-Wei Zhou
Original Assignee
Univ Yuan Ze
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Yuan Ze filed Critical Univ Yuan Ze
Priority to TW097104511A priority Critical patent/TW200935607A/zh
Priority to US12/289,485 priority patent/US8017941B2/en
Publication of TW200935607A publication Critical patent/TW200935607A/zh
Application granted granted Critical
Publication of TWI360228B publication Critical patent/TWI360228B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3461—Nanoparticles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3234—Materials thereof being oxide semiconducting materials

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Thin Film Transistor (AREA)
TW097104511A 2008-02-05 2008-02-05 Ceramic MESFET device and a manufacturing method therefor TW200935607A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW097104511A TW200935607A (en) 2008-02-05 2008-02-05 Ceramic MESFET device and a manufacturing method therefor
US12/289,485 US8017941B2 (en) 2008-02-05 2008-10-29 Ceramic MESFET device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW097104511A TW200935607A (en) 2008-02-05 2008-02-05 Ceramic MESFET device and a manufacturing method therefor

Publications (2)

Publication Number Publication Date
TW200935607A true TW200935607A (en) 2009-08-16
TWI360228B TWI360228B (cg-RX-API-DMAC10.html) 2012-03-11

Family

ID=40930786

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097104511A TW200935607A (en) 2008-02-05 2008-02-05 Ceramic MESFET device and a manufacturing method therefor

Country Status (2)

Country Link
US (1) US8017941B2 (cg-RX-API-DMAC10.html)
TW (1) TW200935607A (cg-RX-API-DMAC10.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI474406B (zh) * 2009-09-18 2015-02-21 Univ Yuan Ze 具金屬氧化物陶瓷材料之半導體場效電晶體（ｍｏｓｆｅｔ）及其製法
RU2586408C1 (ru) * 2015-01-15 2016-06-10 Чун-Тай ЧАН Керамический полупроводник, способный повышать плотность окружающих супероксидных ионов после нагревания

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8071740B2 (en) * 2000-11-17 2011-12-06 Vascular Biogenics Ltd. Promoters exhibiting endothelial cell specificity and methods of using same for regulation of angiogenesis
US8987732B2 (en) * 2013-08-12 2015-03-24 Chung-Tai Chang Ceramic semiconductor capable of increasing the density of surrounding superoxide ions after being heated
KR102459948B1 (ko) * 2015-12-28 2022-10-31 엘지디스플레이 주식회사 액티브층, 이를 포함하는 박막트랜지스터 어레이 기판 및 표시장치
CN107311655B (zh) * 2017-07-27 2019-10-08 东莞信柏结构陶瓷股份有限公司 流延成型用浆料及其分散方法与应用方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6693335B2 (en) * 1998-09-01 2004-02-17 Micron Technology, Inc. Semiconductor raised source-drain structure
JP2002246310A (ja) * 2001-02-14 2002-08-30 Sony Corp 半導体薄膜の形成方法及び半導体装置の製造方法、これらの方法の実施に使用する装置、並びに電気光学装置
TW200306670A (en) 2002-03-15 2003-11-16 Univ Arizona State Complementary schottky junction transistors and methods of forming the same
TW200534377A (en) 2004-03-26 2005-10-16 Central Res Inst Elect Method for making a schottky junction type semiconductor device
US7485514B2 (en) 2006-01-05 2009-02-03 Winslow Thomas A Method for fabricating a MESFET
JP5541918B2 (ja) * 2006-05-22 2014-07-09 ナンヤン テクノロジカル ユニヴァーシティー 有機薄膜トランジスタ用の溶液プロセスにより作製される無機膜
TWI323034B (en) * 2006-12-25 2010-04-01 Ind Tech Res Inst Electronic devices with hybrid high-k dielectric and fabrication methods thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI474406B (zh) * 2009-09-18 2015-02-21 Univ Yuan Ze 具金屬氧化物陶瓷材料之半導體場效電晶體（ｍｏｓｆｅｔ）及其製法
RU2586408C1 (ru) * 2015-01-15 2016-06-10 Чун-Тай ЧАН Керамический полупроводник, способный повышать плотность окружающих супероксидных ионов после нагревания

Also Published As

Publication number Publication date
TWI360228B (cg-RX-API-DMAC10.html) 2012-03-11
US8017941B2 (en) 2011-09-13
US20090194765A1 (en) 2009-08-06

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