TW201230305A - Variable resistance memory element and fabrication methods - Google Patents

Abstract

An electronic device comprises a variable resistance memory element on a substrate. The variable resistance memory element comprises (i) an amorphous carbon layer comprising a hydrogen content of at least about 30 atomic percent, and a maximum leakage current of less than about 1 x 10<SP>-9</SP> amps, and (ii) a pair of electrodes about the amorphous carbon layer. Methods of fabricating this and other devices are also described.

Description

201230305 VI. Description of the Invention: [Technical Field] The present embodiment relates to a related variable element of a variable resistance memory element undergoing a resistive change and is used in [Prior Art] variable electric P and memory element And a method of creating a memory application in the variable resistance memory electronic circuit. Electronic circuits, such as 'integrated circuits, displays, and photovoltaic cells, use microprocessor-based systems with a variety of memory devices. The type of memory device depends on the desired memory characteristics and can include structures such as -programmable (such as anti-fuse), rewritable, and volatile or non-volatile memory. As an example of 'resistive random access memory (4)istive (10)d0m-access memory; RRAM) is a relatively new type of semi-volatile β t volatile de* it, the semi-volatile or non-volatile memory system based on variable resistance Resistive switching of memory components. In 纟rram, a varistor memory element containing &quot;electrical is usually insulated &amp;amp; but after applying a sufficient voltage or current, it can conduct electricity via one or more filaments or conductive U lines. Conductive path formation can result from different mechanisms, including variations in the junction structure of the resistive switching material. Once the conductive filament is formed, the conductive filament can be reset by applying an appropriate voltage. Go to the more resistive state or set the conductive filament to a lower resistance state. As another example, a programmable conductor random access memory (PCRAM) unit and a CMOS compatible field programmable gate array (FPGAs) are also used. Switched variable resistance memory component. In operation, the memory unit stores information by responding to a predetermined voltage or current signal applied to the component, the memory cell storing information, the memory cell comprising a variable resistance memory component. For example, in the read-only memory unit t, the first value can be written to the memory unit by applying a signal to the unit, and the signal has a predetermined voltage level, so that the magnitude of the k is applied relative to the unit resistance. Change the electrical resistance through the memory unit. In the rewritable unit, the second value (or preset value) can be written or restored to the memory unit by applying a second signal to the memory unit to change the resistance through the memory unit back to the original Level. The voltage level of the first signal is opposite to the voltage level of the first signal, and the voltage level of the first signal is _ _ / J- Dfe — 1 Morning 第 “The voltage level of 唬 may be the same or possible Not the same. Each φ) Λ〆a U female resistance state is stable, so that the memory unit can retain the stored values of the memory cells without refreshing frequently. Therefore, by using the variable resistance material Stylized or set to a different resistance value to operate the variable resistance material, the resistance value can be reversible or irreversible. In addition, by reading the signal to read or "access" the unit value to use the mine The value of the disaster-causing electric square determines the resistance value of the unit. The value of the voltage in the J ^ voltage is lower than the voltage required to change the resistance of the unit. If the detection resistance level is greater than the reference level, the memory unit is determined to be in the "off" state, or if the detected resistance level is less than the reference level, the memory unit is determined to be in the "on" state. 'Or save the "^" value. However, the absolute or reference resistance value 201230305 and the resistance change must be stable and stable in order to reproduce and reliably operate the CRAM, which is affected by the application of a known voltage. Materials are known for resistive switching by exhibiting a voltage on a layer to exhibit at least two different resistance states, and because the germanium material is a variable resistive memory component for a memory cell. Candidate material. - Some of the materials under development include metal oxides (such as 2〇3 Cu〇x, Hf〇2, Mo〇x, Nb2〇5, Ni〇x, Ta2〇5, Ti〇x, and Zr〇2) layers. And an amorphous carbon layer. However, it has been generally found that the resistance state of the amorphous slave layer varies between one layer and the other, and thus the amorphous carbon layer is unstable. Without being bound by theory, the resistance of the 仏-free carbon layer changes after the application of the set voltage, since the bonded structure of the carbon material changes from the SP3 structure to the sp2 structure. It is further believed that the set voltage is used to heat the (four) carbon layer to cause a change in the joint structure. However, 'there is no known why the amorphous carbon layer can change in the level or set voltage value of two or more resistance states of the amorphous carbon layer' to achieve a specificity between a carbon layer and a carbon layer t. This variability in the reliable switching between two known resistance states of the resistive shape has limited the use of the amorphous carbon layer in memory components and cells. Another problem with the conventional amorphous carbon layer is that in the case of heat treatment, the thermal instability of the amorphous carbon layer is known. It is known that some layers exhibit better resistance properties when exposed to the same, but exhibit a degraded resistance level after heat treatment. For example, although the resistivity of the layers is measured to be greater than 350 ohm-cm or even greater than the ohm centimeters before processing, the resistivity will decrease to a much lower value after heat treatment, which is 1〇〇201230305 ohms- Centimeters to 200 ohm-cm. Further, the conventional amorphous carbon layer may also exhibit excessive shrinkage after annealing to separate the layer from the substrate. Thus 'amorphous carbon layer* can be used in many structures, including other materials that must be deposited at elevated temperatures, such as multilayer stacks, arrays, and others for 3D circuits, to further limit amorphous carbon. The application of layers in the structure of memory cells. Due to various reasons including these and other deficiencies, although various memory cells of variable resistance memory devices have been developed and these variable resistance memory devices contain an amorphous carbon layer, further improvements are continuously sought. A method of producing a shaped carbon layer and an amorphous carbon layer. SUMMARY OF THE INVENTION The present invention provides an electronic device including a variable resistance memory element on a substrate. The variable resistance memory device includes: an amorphous carbon layer comprising a hydrogen content of at least about 3 atomic percent and a maximum leakage current of less than about 1 x 1 〇 _9 amps; and (2)- The counter electrode 'the pair of electrodes surrounds the amorphous carbon layer. The present invention provides an electronic device comprising an amorphous carbon layer disposed on a substrate, the amorphous carbon layer comprising: a hydrogen content of at least about 30 atomic percent and less than about 1 X 1 〇 _9 Ampere's maximum leakage current, and forming the amorphous carbon layer by a method comprising the steps of: placing the substrate into a processing zone; maintaining the substrate at a temperature of less than 300 ° C; treating the gas Introduced into the treatment zone, the processing gas comprises a diluent gas and a carbon-containing gas; the treatment gas dimension 201230305 is held at a pressure of about 0.5 Torr to about 9 Λ kr~, and a pressure of 20 Torr, and the process gas Form a plasma. The present invention provides a method for depositing an amorphous slave layer on a substrate. The method comprises the steps of: placing the substrate in a processing zone to maintain the substrate at a temperature of less than 3 〇〇〇c; Introducing a process gas into the treatment zone, the process gas comprising a diluent gas and a carbon-containing gas and maintaining the gas processing gas at a pressure of about 〇 5 Torr to about 20 Torr, and by Applying a F-force rate around an electrode of the processing region and applying a second power to the substrate at a second frequency to form a plasma from the "Xuan processing gas, wherein the second frequency is lower than the first frequency. [Embodiment] 1A shows an exemplary embodiment of a memory cell 1A, the hidden body unit 100 includes a resistive switching element 1〇6 on the substrate 11. The resistor changing element 106 does not define a resistance in response to the stimulation signal. From at least the p-th resistivity (or resistance) to the second resistivity (or the resistive stimulus signal can be, for example, an applied thunder method, an electrical sacrificial or a temperature change. Two different resistors of the resistance switching element 106 Rate or resistance (this time empty The size and thickness of the singularity can be used to store information or signals. The memory unit ι with variable resistance switching elements can be used for different applications, including resistance change memory cells (RRAM) The variable resistance switching element 1 〇6 can be -hetero_+, j is a dimensional or three-dimensional structure, and the structures are built in layers on the substrate m. The memory unit ι can also be rewritable. Or a programmable 'such as anti-drawing unit. By switching from low resistance 201230305 rate to high resistivity, memory unit i 00 allows storing binary information' or vice versa. Memory unit 100 is formed on substrate 110 The substrate 11 can be, for example, a semiconductor such as a germanium wafer, a germanium wafer or a germanium wafer; a compound semiconductor such as gallium arsenide; or a dielectric such as a glass panel or display, and the dielectric can include, for example, boron Phosphorus glass, phosphonium glass, borosilicate glass, and sulphate glass, polymers, and other materials. In one variation, 'substrate 110 is a germanium wafer, which contains one or more large Helium crystal Although the exemplary embodiment of the 'substrate 10' is illustrated as a single planar structure for simplicity, it should be understood that the substrate 11 may, and generally does, include other structures, such as semiconductor structures, polysilicon memory cells, CMOS structures, or other structures. The structures are formed on a lower underlayer comprising a semiconductor, a compound semiconductor or a dielectric material. The first electrode 112a is formed on the substrate 110 by depositing a layer of conductive material on the substrate 110. Typical deposition processes include physics A vapor deposition (PVD) process, such as sputtering; or a chemical vapor deposition (CVD) process, such as plasma assisted CVD or heat assisted CVD. For example, in a conventional sputtering process, an electrically destroyed material comprising a deposited material is deposited to deposit a conductor layer onto a substrate 110 in a sputtering chamber. A chemical mechanical polishing (CMP) step may be performed to make the conductive material smooth or flat. In one embodiment, the first electrode 1丨2a is formed of a conductive material containing an elemental metal such as aluminum (A1), copper (Cu), gold (Au), Ni (Ni), and (Pt), Doped polysilicon, silver (Ag), titanium (Ti), crane (w), 201230305 zinc (Zn) or a mixture of the above; or conductive metal compounds such as tin selenide (SnSe), bismuth selenide (SbSe) ) or silver selenide (AgSe), tungsten telluride (wsi). In one variation, the first electrode 112a comprises tungsten having a thickness of from about 2 angstroms to about 1000 angstroms, such as from about 50 angstroms to about 5 angstroms (e.g., about 1 angstrom). The first adhesive layer 114a may be formed on the surface of the first electrode 1123 as appropriate. The first adhesive layer 14A promotes bonding between the upper cladding layer and the electrode U2a, and the first adhesive layer U4a can also be used to electrically isolate the memory cell 1 and the substrate 110. The adhesion layer U4a may be, for example, an oxide or nitride compound (such as a metal oxide or nitride) layer, and in one variation, the same metal as that used for the electrodes 112a, 112b is used. For example, when the first electrode 112a is made of tungsten, the adhesion layer U4a contains tungsten oxide or tungsten nitride or a mixture of tungsten oxide and tungsten nitride. Adhesion layer 114a may also contain oxygen or nitrogen adsorbing atoms to alter the bonding or chemical affinity of the atoms at the surface of first electrode 112a with subsequent deposited layers. In a shell example, the surface of the first electrode I!h is treated with an oxygen-containing and/or nitrogen-containing gas to adsorb oxygen atoms and/or nitrogen atoms onto the surface for use in the resistive metal oxide layer. The metal atoms are joined to form a single layer having a thickness of less than 100 angstroms or even less than about 1 G angstrom. In another embodiment, the treated surface of the first electrode 112a forms a solution boundary between the first electrode 112a and the amorphous counter layer 120, such that the atoms of the carbon layer (4) and the atoms of the first electrode 112a are at the solution boundary. Mix to provide a good adhesion. Before depositing the amorphous carbon layer 120, nitrogen atoms can be adsorbed on the surface of the first electrode 112a to form a solution side of the carbon/metal interface 201230305. Applied by Cheng et al. in September 29, 2009, titled

Suitable adhesive layers 114 &amp; 11414 are described in commonly assigned U.S. Patent Application Serial No. 12/61,948, the entire disclosure of which is incorporated herein by reference. The resistance switching element 106 is formed over the first electrode 丨丨 2a or the adhesion layer 丨丨 4a or directly on the first electrode 112a or the adhesion layer U4a. Above the J, there may be one or more intervening layers, and "directly on" means above the lower layer and in direct physical contact with the lower layer. In any of these variations, the variable resistance switching element 1〇6 is in electrical contact with the lower first electrode 112a. In an exemplary embodiment, the resistance switching element 106 includes at least one resistance switching material 118 that is in a set transition controlled by a set stimulation signal (such as a set current, a set or programmed voltage, or a set or programmed pulse). The switching material 118 can transition from a higher resistivity state or a resistance value to a lower resistivity state or resistance value. The reverse transition from the lower resistivity state to the higher resistivity state is referred to as the reset transition, which is affected by the reset current, the reset voltage, or the reset pulse, resetting the current, resetting the voltage, or The repetition of the pulse causes the resistance switching element 1 〇6 to be in an unprogrammed state. In an exemplary embodiment, the resistance switching material U8 comprises or consists essentially of an amorphous carbon layer 120. The amorphous carbon layer 120 may contain a non-lengthed amorphous material, microcrystalline carbon glassy carbon, graphene, or even carbon nanotubes, and the carbon nanotubes are single-walled nanotubes and multi-layered nanotubes. Or a mixture of single-walled nanotubes and multi-layered wall nanotubes 10 201230305. The amorphous carbon layer 120 may also include other halogens such as hydrogen, nitrogen or oxygen. In one variation, the thickness of the 疋-shaped carbon layer 120 is from about 1 〇〇 to about 1000 Å, or from 曼 》 to 々 100 Å to about 500 Å (for example, about 300 Å) ° in another In one embodiment, the layer resistance ("〇/口" or "ohm/square") of the amorphous carbon layer 120 is about Ω7 Ω/□ to about 1 χ1 for a layer having a thickness of about 2000 angstroms. 8ω/□. Although the resistance switching element 1 〇 6 includes a resistor cut Μ # 换 枓 and the resistance switching material 118 is an amorphous carbon layer 12G as shown, the resistance switching element 1 () 6 may be entirely composed of other materials or include other A combination of materials or layers. For example, other suitable resistance switching materials may include oxidized town or hydrocarbon materials, and other suitable resistive switching materials may be used alone or in combination with the amorphous carbon layer 12A. Further, the resistance switching material may include other elements such as helium, nitrogen and hydrogen, and other elements are usually present in the amorphous carbon material. Further, as the case may be, the second adhesive layer U4b may be formed on the surface of the resistance switching material 118. The second adhesion layer U4b facilitates bonding between the resistance switching material ι8 and the overlying layer (such as the second electrode 112b), and the second adhesion layer 114b can also be used to electrically isolate the memory cell 1 and the substrate 11A. The second adhesive layer 114b and the first adhesive layer U4a may have the same material, such as a metal nitride (such as titanium nitride) layer. By depositing a layer of conductive material on the substrate 110, forming a second electrode 112be over the resistance switching material 118, the second electrode U2b may be made of the same conductive material as the conductive material of the first electrode 112a, and by the same deposition process Or a different deposition process to deposit the second electrode U2b. A chemical mechanical polishing (CMP) step may be performed to smooth or flatten the conductive material. The second electrode 112b is also formed of a conductive material. The conductive material comprises elemental metal, such as Ming, Tong, or Crane: Other materials such as tungsten telluride or tungsten nitride may also be used. Tan. In use, by reversibly switching the resistivity of the resistance switching material i 18, switching between two or more resistance states, the memory cell 1 can be operated as a programmable or rewritable memory. element. For example, after fabrication, the resistive switching material 118 can be in an initial low resistivity state, after the first predetermined voltage or current is applied, the initial low resistivity bear switches to a high resistivity state and is applying a second voltage or After the current, the high resistivity state returns to the low resistivity state. Alternatively, after fabrication, the resistive switching material shawl 118 may be in an initial high resistance state, and the initial high resistance state may be reversibly switched to a low resistance state after application of the second predetermined voltage or current. Therefore, during the operation of the memory unit 100, one resistance state may indicate a "off" state such as a binary "〇", and another resistance state may indicate an "on" state, such as a binary "^", but may be used Greater than two data/resistance states. In a variation, in the "on state", the resistivity switching material 118 has a resistivity of less than 10 ohm centimeters, and is, for example, about 0.001 ohm-cm to about 10 ohm-cm; and in the "closed j state, the resistance is switched. The material 丨丨8 has a resistivity of at least 3 ohm-cm, for example, about 200 ohm-cm to about 1 ohm ohm. The second embodiment of the memory cell 1 图示 is illustrated in FIG. 1B. In an embodiment, the isolation layer 124 is deposited on the substrate 11 to electrically isolate the memory cell 1 and the substrate 1 1 . The isolation layer i 24 can also be used as an adhesion layer, and the adhesion layer promotes the upper cladding layer and the substrate 11 . Bonding between turns. Isolation 12 201230305 Layer 124 can be, for example, an insulator such as tantalum oxide, tantalum nitride, hafnium oxynitride or other insulating material. Conductive address line 126 is used as a memory cell 1 or a plurality of memories The interconnecting wires of the body cells form a memory array (not shown). The conductive address lines 126 are fabricated by depositing a conductive material onto the substrate 11 , the conductive material such as for the first electrode ma and Second electrode 112b The above materials, and the conductive address lines 126 are deposited by the same process. In one variation, the address lines 126 comprise tungsten having a thickness of from about 200 angstroms to about 2000 angstroms. The insulator layer 1 28 is above the address lines 126. To prevent atoms of the conductive material from diffusing or migrating from the address line 12 6 or other such layers. For example, the insulator layer 128 can be, for example, a dielectric material such as nitridant (si3N4); a low dielectric constant material such as from Black DiamondTM of Applied Materials in Santa Clara, Calif.; or insulating glass, such as tetraethoxyorthosilicate (TEOS) deposited oxidized stone. Such layers can be deposited by conventional CVD methods or PVD methods, and will Such a layer layout pattern is formed by using a lithography method and an etching method. In this modification, a layer of a conductive material is formed over the via 130 and the insulator layer 128, and then ground or etched away to be deposited on the via 丨3 〇 In addition to the excess conductive material, a first electrode 112a is formed in the via 13 中 in the insulator layer 128. A resistance switching element 1 〇6 is formed over the first electrode 112a. A resistance switching element 1 〇6 may be formed on the first electrode 112a to be in electrical contact with the first electrode 112a. As described above, the resistance switching element 106 includes 13 201230305 amorphous carbon layer 120. The amorphous carbon layer 120 and the above modification Having the same properties, and depositing the amorphous carbon layer 120° using the same method as the above-described modification 120° As described above, the second electrode 112b is formed over the amorphous carbon layer 12A of the resistance switching element 106. In operation, it is believed that After the adjustment voltage is applied, the metal ions are diffused from the first electrode 1 2a or the second electrode ii 2b into the non-疋1% layer 120 to form a conduction channel in the carbon layer 120. For example, it is believed that upon application of a voltage, metal ions enter the amorphous carbon layer 120 and donate electrons to the carbon-carbon double bond between the sp2 hybridized carbon atoms, such that the sp2 hybridized carbon atoms are sp3 hybridized. A conductive channel is formed between the carbon atoms. Subsequent application of the write voltage reverses the process to program the amorphous carbon layer 120 into a lower resistance state, the energy of the subsequently applied write voltage being lower than the energy of the regulated voltage. In yet another embodiment, the memory unit 1 includes a control element 134, such as a transistor or a diode, and the control element 134 operates in conjunction with the resistance switching element 106. The first lc diagram illustrates the memory unit 1A, the memory unit 100 includes a control element 134, and the control element 134 is a semiconductor diode 136. The semiconductor diode 136 includes a bottom-doped 1 m, a native region 142, and a top p-type doped region 144. The intrinsic region 142 can have a low concentration of P-type or n-type dopants that can be implanted into the region or the p-type or cardioid dopants can be separately The p-type doped (tetra) 144 is diffused into the region from the adjacent ^-doped region 140. Alternative or opposite directions may also be used (e.g., castor L, for example, P-type doped region ratio at the bottom). Further, the resistance switching element 1〇6 can be positioned below the second 201230305. The resistance switching element 丨〇6 is used as a memory storage element. The diode 136 can be made of conventional semiconductor materials such as tantalum, niobium or tantalum-niobium alloys in single crystal or polycrystalline form. The diode 136 and the resistance switching element 106 are positioned between the first electrode 112a and the second electrode 112b. The resistance switching element 丨〇6 includes an amorphous carbon layer 丨2〇. An adhesion layer and an isolation layer may also be included above or below the electrodes 112a, 112b. The memory cell 1 is in a different data state by a series of different forward voltage biases. The current flowing through any of the different data states is different from the memory cell 1 〇 任何 between any other different data states so that the difference between the states can be easily detected. In one embodiment, a chemical vapor deposition (CVD) process, such as a plasma-enhanced chemiCal vapor deposition (PECVD) process, is used to deposit the amorphous carbon layer. However, it will be apparent to those skilled in the art that the amorphous carbon layer 120 can be formed by other deposition processes. For example, the amorphous carbon layer 120 can also be deposited by, for example, but not limited to, PVD sputter deposition from a target, a thermal CVD process, and other methods. As shown in FIG. 2, a suitable plasma assisted chemical vapor deposition (PECVD) chamber 40 includes a surrounding wall 48 that includes a top plate 52, a side wall 54 and a bottom wall 56 that surrounds the processing zone 42. The chamber 40 can also include a liner (not shown) that serves as a liner surrounding at least a portion of the perimeter wall 48 of the treatment zone 42. The volume of chamber 40 is typically about 2 Torr, 〇〇〇 cm3 to about 3 〇, 〇〇〇 cm3, and more typically about 24,0 〇〇 cm3, for processing 3 〇〇 claw 矽 wafers. In one variation, the chamber 4 is a pr〇ducer® SE chamber from Applied Materials, Santa Clara, Calif., 2012. During processing, the substrate support 58 is lowered and the substrate transport member 64 (e.g., robotic arm) causes the substrate 11 to pass through the inlet port 62 and rest on the branch member 58. The substrate support 58 is movable between a lower position for handling and an adjustable higher position for handling the substrate 110. The substrate support 58 can include a closed process electrode 44b to produce a plasma from the process gas that is introduced into the chamber 40. Substrate support 58 may be heated by heater 68, which may be an electrically resistive heating element (as shown) 'heating lamp (not shown) or plasma itself. Typically, the substrate support 58 comprises a ceramic structure having a receiving surface to receive the substrate no, and the ceramic structure protects the processing electrode 44b and the heater 68 from the effects of the chamber environment. In use, a radio frequency (RF) voltage is applied to the processing electrode 4, and a direct current (DC) voltage is applied to the heater 68. The processing electrode 44b in the substrate support 58 can also be used to electrostatically sandwich the substrate 11 and the support member. The substrate support 58 can also include one or more rings (not shown) that at least partially surround the perimeter of the substrate 11 on the support member 58. After loading the substrate 11G onto the fulcrum member 58, the fulcrum member 58 is raised to a processing position that is closer to the gas distributor 72 to provide the desired spacing between the substrate 110 and the gas distributor 72. Distance ds. Suitable spacing distances are from about 200 mils to about 1000 mils (or from about 0.5 cm to about 2.5 cm). A gas distributor 72 is positioned above the processing zone 42 to evenly distribute the process gas across the base i1(). The gas distribution 201230305 can deliver two separate streams of the first process gas and the second process gas to the processing zone 42, respectively, without mixing prior to introducing the first process gas stream and the second process gas stream into the process zone 42. The gas stream, or gas distributor 72, may premix the process gas before it is pre-mixed with the process gas. Gas distributor 72 includes a face plate 74 having a bore 76 that allows process gas to pass therethrough. Typically, the faceplate 74 is made of metal to allow a voltage or potential to be applied across the faceplate γ4, thereby acting as a cavity to 40 of the process electrode 44a. A suitable panel 74 can be made of aluminum having an anodized coating. The substrate processing chamber 40 also includes a first gas supply 80a and a second gas supply 80b for conveying the first process gas and the first process gas 'gas supply 8a, 8b' to the gas distributor 72. Sources 82a, 82b, one or more gas conduits 84&amp;, 8 and one or more gas valves "a, 86b. For example, in one variation, the first gas supply includes first gas director 84a and first a gas valve 86a to transfer the first process gas from the first mill source 82a to the first inlet 78a of the gas distributor 72; and the first gas supply 80b includes a second gas conduit 84b and a second gas valve 86b to The second process gas is transferred from the second gas source 8 to the second inlet 78b of the gas distributor 72. The electromagnetic energy (eg, high frequency voltage energy) can be coupled to the process gas to supply the process gas energy for self-treatment. The gas forms a plasma. To supply the first process gas energy, a voltage is applied between (1) the first processing electrode 4 and (2) the first processing electrode in the branching member 58. The first processing electrode 44a may Apply 1 to the gas distributor 72, the top plate 52 or the side wall μ. 7 201230305 The voltage on the pair of processing electrodes 44a, 44b will be the processing gas of the energy capacitor lighter. Usually, the 'process electrode...,: 4 = voltage is an alternating voltage, and the alternating voltage oscillates at a radio frequency. Typically, RF coverage ranges from about 3 kHz to about 300 GHz. For the purposes of this application, low radio frequencies are less than about 1 MHz of their radio frequencies, and more = radio frequencies of about 100 KHz to 1 MHz, such as frequencies of about 3 〇〇 KHz. In addition, for the purposes of this application, high radio frequencies are from about 3 MHz to about 6 〇 MHz, and more preferably about 13 56 MHz. The selected RF electrode is applied to the processing electrode ... at a power level of about (4) to about 1000 W, and the processing electrode 44b9 is often grounded. The particular RF range used and the power level of the applied voltage will then depend on the type of material being deposited. The chamber 40 also includes an exhaust device 9' to remove waste process gases and by-products from the chamber 4 and maintain a predetermined pressure of the process gas in the treatment zone 42. In one variation, the venting port 49 includes a wicking channel %, the pumping channel 92 receives the spent process gas from the processing zone 42, the venting port is from the grab valve 96, and/or more rows The gas system is % to control the pressure of the process gas in the chamber. The exhaust pump 98 may include a cave wheel molecular system, a cryopump, a coarse pumping, and a combined function - or more, the combined function having a function greater than -. The chamber 40 may also include a bottom wall % (not shown) through the chamber 4 to deliver purge gas to the chamber 4:. Typically, the purge gas flows upwardly from the inlet port through the substrate support to the = ring channel. The purge gas is used to protect the surfaces of the soil components 58 and other chamber components from improper deposition during processing. 18 201230305 Purified gases can also be used to influence the processing gas to flow in a desirable manner. The controller 102 is also used to control the operation and operating parameters of the chamber 4. The controller 102 can be a winter computer - a processor and a memory. The processor executes a cavity software such as a computer program stored in a memory. The memory can be a hard disk drive, a read only memory, or a flash memory. Or other types of memory. 枯岳丨丨哭】Μ士1§ 102 can also contain other components, such as floppy disk drive and card frame. Card frame can contain single board computer, analog and digital input / Output board, interface panel and stepper motor controller board. The chamber control software includes a set of instructions that specify the timing of the specific process, the gas mixture, the cavity, and the chamber temperature. , microwave power level, high frequency power level, support position and other parameters. The chamber 40 also includes a power supply 1 〇 4 to transfer power to various chambers to 4 pieces, such as the first processing power in the chamber 13仏 and the second processing electrode 44b of the substrate support member 58. In order to transmit power to the processing electrode 44a 44b, the power supply device 〇4 includes a radio frequency voltage source, and the radio frequency voltage source provides electricity, Selected radio frequency The optional power level of I. The power supply 1 〇 4 may include a single RF voltage source or a plurality of voltage sources that provide both high RF and low RF. The power supply 104 may also include an RF matching circuit. The power supply 1 4 may further include an electrostatic charging source to provide an electrostatic charge to the electrodes 44a, 44b, which is typically an electrostatic chuck in the substrate support 58. When a heater is used within the substrate support 58 At 68 o'clock, the power supply 1 4 also includes a heater power source that provides a suitable controllable voltage to the heater 68. When the gas distributor 72 or the substrate support 58 is applied 19 201230305 plus DC When biased, the power supply 104 also includes a DC bias source coupled to the conductive metal portion of the panel 74 of the gas distributor 72. The power supply 104 can also include components for other chambers 40 ( For example, the power source of the motor and the robot of the chamber. During the deposition process, the temperature of the substrate 110 can vary between 1 〇 (TC, 200 and 300 ° C. Using a temperature sensor (not shown) Measure temperature to detect The temperature of the substrate support 58 in the chamber 40, a temperature sensor such as a thermocouple or an interferometer. The temperature sensor can relay the data of the temperature sensor to the chamber controller 1 〇 2, and then the chamber The controller 1 〇 2 can control the temperature of the processing chamber 40 using temperature data 'e.g., by controlling the resistive heating elements in the substrate support 58. An exemplary deposition process and/or a series of deposition processes will now be described. In the process, the substrate 110 is placed in the processing region 42 of the chamber 40, and the substrate 110 has the deposited first electrode 112a. As described above, the PVD process or the CVD process can be used in the chamber or The first electrode U2a is deposited in other devices. Initially and optionally, the surface of the first electrode u2a is treated to form an adhesion layer 丨丨4 such that the amorphous carbon layer 12 2 〇 can be deposited over the first electrode U2a. In one variation, the adhesion layer 114 comprises a single or more layers of oxygen and &apos; or a nitrogen atom, the single or more layers of oxygen and . Or a nitrogen atom is formed on the amorphous carbon layer 丄2〇. For example, the adhesion layer 丄丄4 is a continuous or discontinuous layer having a thickness of about 5 single layers, which may have a thickness of less than about 丨〇. The average saturation of the surface of the silver layer U2a having the adhesion promoting material may vary between about 5% and about 1%, such as at about 75% and about (5) (eg, about township or 20 201230305 is greater than about 98%). In a variation, nitrogen is added to the metal surface of the electrode u2a to form a nitrogen-rich surface by exposing the substrate 110 to a nitrogen-containing gas. The nitrogen-containing gas can be freed in the chamber 40 by coupling an inductive or capacitive electric field into the processing zone 42. The nitrogen-containing ions thus formed can be promoted to deposit on the surface of the first electrode U2a or to strike the surface of the first electrode U2a by applying a bias voltage to the substrate 11?. The nitrogen-containing ions occupy the adsorption sites on the surface of the first electrode 112 &amp; and some nitrogen-containing ions are embedded or implanted in the surface of the first electrode 112a depending on the bias energy of the substrate. Weak bias (such as rf bias with a rms value between about 100V and about 5〇〇v at power levels less than about 5 watts) can be used for shallow surface treatment with nitrogen-containing ions . In some embodiments, nitrogen-containing ions may be deposited on the surface of the first electrode to an average depth of less than about 5 monolayers. In other embodiments, the nitrogen containing ions can be deposited to an average depth of less than about 1 〇. In one embodiment, nitrogen is added to the surface of the first electrode 112a by exposing the surface to a nitrogen-containing plasma. The nitrogen-containing gas mixture is supplied to the processing chamber 4 via the gas distributor 72, and the substrate 11 is placed on the substrate support 58 in the processing zone 42. The substrate cut-off 58, gas fraction = 72 or substrate cut-off 58 and gas distributor 72 are difficult to source, and the electrical energy source can be pulsed DC or RF energy provided via an impedance matching circuit. The electricity is capable of dissociating the nitrogen-containing gas mixture into electricity, and the plasma interacts with the surface of the first electrode &quot;2a. The nitrogen-containing gas mixture may comprise nitrogen (n2), ammonia (10) 3), nitrous oxide (10) 2) or hydrazine (8), and the nitrogen-containing gas mixture may further comprise a carbon-containing gas such as methane 21 201230305 (ch4), Alkane (c2h6), ethylene (c2h4) or acetylene (c2h2). The inclusion of carbon in the nitrogen-containing gas mixture may be advantageous for embodiments in which the resistive layer comprises amorphous carbon or doped amorphous carbon. Typically, between about 10 seem and about 1 〇, 〇〇〇sccm 'such as between about 500 seem and about 8,500 seem (eg, between about 7,500 sccm and about 8,500 sccm), or about 35 〇〇sccm A nitrogen-containing gas mixture is supplied to the processing chamber at a flow rate between about 4,500 seem, about 1,5 〇〇 seem and about 2,500 seem, or between about 500 seem and about 1,5 〇〇 sccm. Adhesion can be controlled by exposure time, or by the volume ratio of nitrogen-containing material to nitrogen-free or nitrogen-containing material to total gas mixture, which can affect the surface saturation of the nitrogen-containing first electrode 丨丨2a layer . In one embodiment, the tungsten-containing electrode 112a is treated by exposure to a gas mixture. The gas mixture comprises nitrogen and acetylene (2), wherein the volume ratio of N2/C2H2 is about 1:1 and about 40:1. Between, for example, between about 1.1 and about 20:1, or between about 2:1 and about 4:1, or between about 5 and about 5:1, or about 5:1 and about 1〇: Between 1 or between about 10:1 and about 2〇:1 'or, between about 2:1 and $(four). The plasma generating power is provided between about 1, watts and about 5, watts, such as between about (10) watts and about 3, watts. The time of exposure to such a state is between about 1 second and about 500 seconds, such as between about 5 () seconds and about seconds (eg, 'spoon 100 (four) between about 2 GG seconds), thereby improving the carbonaceous layer Attached to the surface of the crane is attached to a real example, supplying nitrogen gas to the chamber at a flow rate of 8, and supplying acetylene gas at a flow rate of 2 〇0 _, and at a temperature of 400 C and at the millitorr The next watt of applied electricity 22 201230305 pulp power for up to 40 seconds to produce a treated tungsten surface, the treated tungsten surface can adhere well to the carbon resistive layer. The amorphous carbon layer 120 is then deposited on the substrate 110 after deposition of the optional adhesion layer 114 or deposited directly onto the first electrode 112&amp; or the amorphous carbon layer 120 is deposited over the other intervening layers. An exemplary embodiment of a process for depositing an amorphous carbon layer 120 is illustrated in FIG. The processing zone 42 of the chamber 40 is maintained under vacuum by controlling the pressure of the process gas introduced into the processing zone 42. The substrate 11 is placed on the substrate support 58 in the processing zone 42 and the substrate support 58 is heated to the desired deposition temperature. A suitable deposition temperature ranges from about 100 ° C to about 400 ° C. » The processing gas is introduced into the chamber 40 before the substrate 110 is placed in the processing zone 42 or after the substrate 110 is placed in the processing zone 42. The processing gas contains a diluent gas and a carbon-containing gas. The carbonaceous gas provides carbon to the amorphous carbon layer 120 to be deposited. The carbonaceous gas may include, but is not limited to, one or more carbonaceous gases, such as CxHy, where X is from 1 to 1 Torr and y is from 2 to 30. For example, the carbon-containing gas may include, but is not limited to, a gas such as CH4, C2H2, c2h4, C2H6, C3H4, C3H6, C3H8, C4H10 or a mixture of the above. The carbonaceous gas may also be triethylamine, or even CxHyNz' wherein X is 1 to i 〇, y is 2 to 30 and z is 1 to 10. In another embodiment, the process gas comprises a carbon-containing gas that lacks oxygen to avoid an oxidizing environment that burns the deposited carbon layer 120. In a variant ten, a carbonaceous gas is supplied at a volumetric flow rate of from about 2 〇〇 seem to about 3000 seem or even from about 200 seem to about 1000 sccrn. 23 201230305 The process gas further includes a diluent gas that provides a better film thickness uniformity across the substrate 110 for the deposited amorphous carbon layer 120. For example, the diluent gas can provide a large amount of gas ions that are supplied with energy by increasing the collision of gas molecules or by transporting carbon-containing gas molecules across the chamber 40. Suitable diluent gases include, but are not limited to, chlorine, hydrazine, hydrogen or nitrogen or one or more of the foregoing. In a variation, a dilution gas is provided at a rate of from about 100 seem to about 1 Torr, 〇〇〇 Sccm, or even about 2 〇〇 sccm to about 5000 seem' or even about 300 seem to about 3000 sccm. In any of these variations, the processing gas in the processing zone 42 is energized by applying a voltage or current of RF (or radio frequency) energy to the processing electrodes 44a, 44b surrounding the processing zone. The electrode 々々a and the material may be separated by about c. In one variation, the first power is applied to the processing electrodes 44a, 44b at a first frequency at a work level of from about 5 watts to about 2 watts. The first-RF power can be, for example, a frequency of about 13 5 MHz. By applying electric power to the substrate cutting member π of the remaining 11G, the power is directly applied to the substrate u〇e, and the second frequency can be applied to the second frequency; the second frequency is lower than the first frequency; for example, the second frequency Can be less than MHz. In a variant, the second RF power is a power level of about 100 watts to watts. By combining different...force 4 rate J public supply: energy 1 can control the film density and adjust the hardness of the foot. The treatment zone 42 is maintained during the deposition process from about 50 ° C to about 650 24 201230305 ° C or even 100 ° C to about 30 ° C. It has been found that the treatment temperature is elevated and the deposited film is controlled. The atomic percentage ratio of the disk to hydrogen, for example, forming an amorphous carbon layer at a temperature of 550 ° C, provides a hydrogen content of less than 20%. The amorphous carbon layer 12 沉积 is deposited using the deposition process, The thickness of the amorphous carbon layer 120 can be formed depending on the application. In one embodiment, the amorphous carbon layer 120 is deposited to a thickness of from about 50 angstroms to about 1000 angstroms to about 5 angstroms to about 300 angstroms. The illustrative examples demonstrate the effectiveness and advantages of the memory cell ι〇〇 and deposition processes described herein. Referring to the illustrative examples, the memory cells and methods described herein will be better understood. It should be understood, however, that each of the features described in the text is used alone or in combination with each other, and not as described in the specific examples. The deposited material is measured according to the processing conditions. The processing conditions shown in Table 1. Descriptive In the example, the various properties of the amorphous carbon layer 120 treat the samples. Table 1

25 201230305 iCl 200 600 400 13800 0 1400 0 250 3.5 iC2 200 1500 400 13800 2000 1000 0 250 3.5 iC3 200 1500 400 13800 2000 700 300 250 3.5 Table 2 Treatment conditions for low-temperature films

The film properties of the selected samples were measured as in Table 2, 26 201230305. The film matte includes density, stress, extinction coefficient (k633), deposition rate (A/min), and annealing at 650 ° C for one hour in nitrogen. Post-annealing thickness percent change and resistivity properties. It has been found that the density after annealing is a good indication of the stability of the amorphous carbon layer 120. In particular, a density of at least about 1.4 or even at least about 1.45 is desirable for achieving a thermally stable film. In one example, the amorphous carbon layer 12 has an average density value of from about 1.40 g/cc to about 1.55 g/cc. Suitable stress values range from about -100 MPa to about -400 MPa. At the same time, the ideal temperature-stabilized amorphous carbon layer 120 has a first resistivity level greater than 4 ohm-ohms and the amorphous carbon layer 120 has a sheet resistance greater than ΐχΐ〇8 ohms/square. Table 3 _ 1 Properties of selected amorphous carbon layer after deposition Thin film density stress n63 3 k633 DR( A/mi η) '·After annealed at 650 °C after 1 hour thickness change (%) post-annealing Resistivity performance AC-2 1.187 -883.9 1.708 0.003 347 -57.82 Baseline annealing iCl 1.600 -529.5 2.042 0.132 423 1 2.30 Comparing the baseline iC2 1.507 -282.4 1.915 0.067 7121 -2.80 Pair Zhao,, Baseline 27 201230305 Improvement 10 Zuo iC3 1.507 -216.6 1.902 0.064 5488 -5.83 Pair------ 10 times improvement according to the baseline Refer to Table 1 and Figure 4, Figure 4 shows the shrinkage in the form of a bar graph, deposited in the amorphous carbon layer 120 One of the desirable properties to be achieved is a low heat shrinkage. Layers having a low heat shrinkage are desirable to prevent the amorphous carbon layer during the amorphous carbon deposition process or during other post deposition processes. 〇 layering or peeling off the underlying substrate 11 当 when at a temperature of more than 500 C or even more than 6 〇〇〇 c, the layer on the substrate 110 or The heat shrinkage problem is particularly pronounced when the layer performs subsequent processing. The layer or other layer on the substrate 110 may include a dielectric layer, an interconnect layer, an ion implant structure, and other layers. It has been found that in the N2 gas at 65 〇〇. After an hour of annealing at c, the baseline sample (AC-2 annealing) had a very high heat shrinkage of about 57%. In contrast, IC1, IC2, and IC3 showed less than about 1% or even less than 5%. Low heat shrinkage. Some of the samples in these samples have an ideal thermal shrinkage of less than 3%. The density of the (4) carbon layer 12() after deposition and the percentage of post-annealing heat shrinkage are also between A τ n. There is an obvious correlation between the knives. It is decided that the amorphous carbon layer 120 and right-handed, the density of eight hundred greater than 1.45 is phased to produce a heat shrinkage of less than about 5%. 'The deposition process conditions for sample IC1 to sample IC3 have a substantially higher deposition rate greater than 4000 28 201230305 angstroms per minute relative to their splicing σ. The baseline sample has about 350 angstroms per minute. Deposition rate. This means that the deposition rate increases tenfold. It illustrates a plurality of sheet resistivity = resistivity of the amorphous carbon layer m in FIG. 5 of different 'treatment of such an amorphous carbon layer 120 is different under different processing conditions. In these examples, the sheet resistance was measured on a KLA-Tencor® mniMApTM purchased from Milpitas, California. A four-point, "Β" type probe is used for the measurement, where the amount _ is at most ohms/square &amp; 'approx. 35 () ohm centimeters). The resistivity is calculated from the sheet resistance using the film thickness t, where the formula is ^ (thin layer resistance 'ohms/square) layer = t wide layer t (thickness, cm) χ ρ (resistivity, euro centimeters). It has been found that the resistivity of the amorphous carbon layer 120 is approximately inversely proportional to the extinction coefficient, and the extinction coefficient is measured at 633 nm. The extinction coefficient is related to the amount of light absorbed by the material. Among the optical characteristics, the extinction coefficient (k) appears in the complex &gt; equation of the refractive index (8). In the expression, the mother of fi, η, and k is a function of the frequency of the incident radiation. The complex refractive index is: n(f)=n(f) + ik(f) , which is slightly more than the resistivity The extinction coefficient is easily measured because the extinction coefficient can be measured without physically contacting the film with the electric milk terminal, and the extinction coefficient is more dependent on the film composition than the film block of the measurement t: For example, extinction can be measured by illuminating a beam of known wavelength and intensity onto a thick material and measuring the percentage of incident light. The person is incident from the medium and transmitted through the medium f. The measured percentage of reflected light and the first shot can be used to calculate the amount of light absorbed by the medium 29 201230305' and the measured percentages can be used to calculate the extinction coefficient. The extinction coefficient provides an alternative means of characterizing the amorphous carbon film after deposition. The extinction coefficient is desirably a lower value, such as 'in the case of measurement with 633 nm light, the extinction coefficient of the amorphous carbon layer is desirably less than about 0.4, or even less than about 0.35, or even less than about 〇. 1 'such as约约3至约〇. 1 » Referring to Figure 5, the amorphous carbon layer sample AC1 is shown to have a sheet resistance of about 2 x 1 〇 5 ohms/square and a resistivity of about ι 2 〇 ohm centimeters. These resistance values are too low for the layer to be acceptable. The AC1-annealed sample was identical to the AC丨 sample measured after annealing the layer at 65 ° C for 15 minutes in a nitrogen atmosphere. The resistance value drops even lower, with a sheet resistance of about 5 5 χ 1 〇 4 ohms/square and a resistivity of 55 ohm-cm. Therefore, the AC1 sample is also not heat resistant. Sample AC2 exhibits electrical resistance and electrical resistivity outside the measurement scale, i.e., greater than lxl 〇 8 ohms/square, which is greater than 4 ohm ohm-cm, both the resistance and the resistivity are ideal. Resistance properties. The AC2-anneal was the same as AC2, but after 1 hour in the gas under the &amp; AC2-anneal maintains high resistance and resistivity, which is outside the measurement scale's, ie, greater than ΐχΐ〇8 ohms/square, which is greater than ohm-cm, which is an ideal property. ''The fresh annealed sample also shows that in the table, the weight is unacceptable: the unacceptable high-thickness shrinkage value, where the thickness variation is greater than 50/〇, that is, about 57〇/〇. =^ "Amorphous carbon layer shows (four) resistance value and electricity The specific resistance value is outside the measurement scale range, that is, greater than (4) 8 ohms 30 201230305 m / square, the resistivity is greater than 400 ohm-cm. However, the ici-annealed sample showed that the resistance value was too low, and the IC1-annealed sample was annealed in nitrogen at 65 〇t for one hour, although the thickness shrinkage value was acceptably less than 5%, that is, 2.3%, as shown in Table 2. Show. The low resistance value after annealing makes the IC summer layer unacceptable. Both amorphous carbon layers IC2 and IC3 exhibit high and acceptable resistance and resistivity, ie, resistance values greater than 1x1 08 ohms/square, and resistivities greater than 400 ohm-cm, even at 650 ° C in nitrogen One hour after annealing the samples, as indicated by IC2_annealing and IC3 annealing. In addition, the thickness shrinkage value is also better, less than 1%, that is, 2 8% and 5 8%. As shown in Table 2, after annealing, the two amorphous carbon layers 120 have a diameter greater than 1×108 ohms/square. The sheet resistance and the electrical P rate greater than 400 ohms and after annealing, the two amorphous carbon layers 12 〇 also have a low heat shrinkage of less than 10% or even less than 5%. The electrical property of the 1C sample layer is 1 〇: a function of the hydrogen content of the sample layer, as shown in Figure 6. It has been found that the hydrogen content of the amorphous carbon layer 120 is an important factor affecting the breakdown field strength and leakage current of the amorphous carbon layer 120. More specifically, the amorphous carbon layer 120 having a high frequency and a low leakage current has a lower leakage current. Furthermore, it is decided that for an as-grown amorphous carbon layer 120 (without any annealing), it is desirable to have a hydrogen atomic percentage of at least 30% to obtain an amorphous carbon layer 12(), The reduced carbon layer 12A has a leakage current of at least about 1 x 10 〇 -9 amps and a breakdown field strength of greater than about _2 5 MV/cm. 12 0 has a greater than the belief that the deposition conditions are such that the amorphous carbon layer 31 201230305 30 ° / 氢 hydrogen content 'will provide the desired properties of breakdown field strength and leakage current. It is further believed that 'ideal amorphous carbon layer 12 〇 has an amorphous structure or an amorphous structure' and the ideal amorphous carbon layer 12 〇 contains carbon, both of which are mixed with sp2 carbon bonds and sp3 hybridized carbon bonds. Engage. The ratio of sp2 hybridized carbon to sp3 hybridized carbon varies from one amorphous carbon layer 12〇 to another amorphous carbon layer 120' depending on the deposition process conditions. However, an increase in the number of hydrogen atoms in the amorphous carbon layer 120 can alter the bonding structure in the carbon layer to provide a greater ratio of sp hybrid carbon to sp2 hybrid carbon. As the sp content increases, the bonding network becomes more powerful due to the increased coordination between the atoms. In addition, the lower amount of sp2 hybrid carbon also provides higher sheet resistance and resistivity as well as higher breakdown field strength due to reduced pi_bonding, which is higher in the layer of sp2 hybrid carbon. High hydrogen content is indicated. Further, the amorphous carbon layer 120 can withstand higher temperatures (for example, greater than 650 ° C) for at least 15 minutes, or even 30 minutes, or even 60 minutes, where the heat shrinkage is less than 丨〇%, or even less than 5%. It has further been found that the breakdown voltage of the deposited amorphous carbon layer 120 can be increased by lowering the temperature of the deposition process. Figure 7 illustrates the breakdown voltage of the different amorphous carbon layers 120, each of which is deposited at a different temperature&apos; and keeping the remaining deposition parameters constant. It can also be seen that the breakdown voltage of the different carbon layers 120 is reduced from about 6 volts (at a deposition temperature of 1 Torr) to about 25 volts (at 3 Torr). This chart illustrates the nonlinear response between the deposition temperature and the breakdown voltage. In addition, this shows no extraordinary results, that is, the breakdown voltage caused by lowering the deposition temperature of 2 〇 (rc) is more than doubled. Because &amp;, it is decided that the deposition process temperature of 32 201230305 is maintained at less than 11 (TC) to deposit an amorphous carbon layer 120 having a dielectric breakdown voltage of at least about 6 volts. Referring again to Figure 6, the amorphous carbon layer 12 〇 also exhibits a high breakdown voltage and Low leakage current, which is rare and unexpected. Therefore, in a desirable variant, the 'variable-resistance memory element comprises an amorphous carbon layer 120'. The amorphous carbon layer 120 comprises at least about 3 atomic percent of hydrogen. The maximum leakage current is less than about 1 X 10.9 amps. It is believed that these desirable properties (dielectric breakdown voltage of at least about 60 volts and maximum leakage current of less than about 1 x 10 psi) are derived from the amorphous carbon layer 12 The increased chlorine content in the crucible. Specifically, it is determined that in the case where the hydrogen content in layer 120 is at least about 30 atomic percent, such properties of the amorphous carbon layer 12〇 can be obtained. In nitrogen at 650 ° C After annealing for an hour, it is not fixed Carbon layer 120 also has a volumetric isotropic shrinkage of less than 5% to provide low heat shrinkage and desirable resistance change properties. While exemplary embodiments of the invention have been illustrated and described, other embodiments may be The other embodiments are incorporated in the present invention and are also within the scope of the present invention. Further, the terms are illustrated below, above, at the bottom, at the top, at the top, according to the exemplary embodiments in the drawings. Τ', 茗一和彦二, and other related or positional terms, and the terms are interchangeable. Therefore, the scope of the appended claims should not be limited to the preferred variations, materials or spaces described herein for illustrating the invention. BRIEF DESCRIPTION OF THE DRAWINGS [Brief Description of the Drawings] 33 201230305 Description: The following description, the appended claims, and the accompanying drawings will be more fully understood. Examples of the invention. However, it should be understood that 'every-feature structure is generally usable in the present invention (and not only in the case of a particular figure)' and the present invention includes Any combination of features, etc. 'In the drawings: - Figure 1 is a schematic diagram of an embodiment of a memory cell comprising a resistive switching element between a pair of electrodes; the second figure is a memory cell In another embodiment, the memory unit includes a resistance switching element between a pair of electrodes; FIG. 1c is a schematic diagram of a programmable unit (or an inverse (four) single it), the programmable single unit includes a counter electrode Figure 2 is a schematic cross-sectional side view of a plasma-assisted chemical vapor deposition apparatus for depositing an amorphous carbon layer; Figure 3 is a deposition process A flow chart of an embodiment for depositing an amorphous carbon layer; FIG. 4 is a strip diagram of normalized shrinkage of an amorphous carbon layer, using different deposition processes to deposit the amorphous carbon layers; Figure 5 is a graph of sheet resistance and resistivity of an amorphous carbon layer using different deposition processes to deposit the amorphous carbon layers; Figure 6 is a graph of breakdown field strength and leakage current of an amorphous carbon layer. Wait Amorphous carbon layer having a different hydrogen content; 7 graph and chart breakdown of the amorphous carbon layer of the voltage, using different deposition temperature 34201230305 those deposited amorphous carbon layer. [Main component symbol description] 40 chamber 42 processing region 44a first processing electrode 44b second processing electrode 48 surrounding wall 52 top plate 54 side wall 56 bottom wall 58 substrate support 62 inlet port 64 substrate conveying member 68 heater 72 gas distributor 74 panel 76 hole 78a first inlet 78b second inlet 80a first gas supply 80b second gas supply 82a first gas source 82b second gas source 84a first gas conduit 84b second gas conduit 86a first gas valve 86b Second air valve 90 exhaust device 92 pumping channel 94 exhaust port 96 throttle valve 98 exhaust pump 100 memory unit 102 controller 104 power supply 106 resistance switching element 110 substrate 112a first electrode 112b second electrode 114 Adhesion layer 114a First adhesion layer 114b Second adhesion layer 118 Resistance switching material 120 Amorphous carbon layer 124 Isolation layer 126 Address line 128 Insulator layer 130 Perforation 134 Control element 136 Diode 140 Bottom η-type doped region 142 Essential area 144 top Ρ _ type tampering zone 35

Claims (1)

201230305 VII. Patent application scope: 1. An electronic device comprising: (a) a substrate; (b) a variable resistance memory component, the variable resistance memory component being located on the substrate, the variable The resistive memory element comprises: (i) an amorphous carbon layer comprising: (1) a hydrogen content 'the hydrogen content of at least about 30 atomic percent; and (2) a maximum leakage current, the maximum The leakage current is less than about 1 x 10-9 amps; and (ii) a pair of electrodes that surround the amorphous carbon layer. 2. The electronic device according to claim 1, wherein the amorphous carbon layer comprises a volumetric isotropic shrinkage, and the volume isotropically shrinks by less than 5% after annealing at 650 ° C for 1 hour in a nitrogen atmosphere. . 3. The electronic device of claim 1, wherein the amorphous carbon layer comprises an extinction coefficient, the extinction coefficient being about 〇 〇 3 to about 0.1 at a wavelength of 633 nm. (The electronic device of claim 1 , wherein the amorphous carbon layer comprises a first resistivity level, the first resistivity level is greater than ohms - cm 0 36 201230305 5. If the request is $! The device, wherein the (four) carbon layer comprises a layer of electricity, and the sheet resistance is greater than ohms/square, and the thickness of the amorphous layer is about 2000 angstroms. Wherein the amorphous carbon layer comprises a thin layer of electricity having a sheet resistance of from about 1 x 1 〇 7 ohms/square to about ΐχΐ〇 8 ohms/square, and one of the amorphous carbon layers having a thickness of about 2 angstroms. 7. The electronic device of claim 1, wherein the amorphous carbon layer comprises a thickness of from about 100 angstroms to about 1000 angstroms. The electronic device of claim 1, wherein the amorphous device The carbon layer comprises a density of from about 1.40 g/cc to about 55 g/cc. 9. The electronic device of claim 3, wherein the amorphous carbon layer comprises a stress level, the stress level The electronic device of claim i, wherein the electrodes are suitable for use in the range of about -100 MPa to about _4 〇〇 Mpa. And applying a set voltage on the amorphous carbon layer to change the resistivity of the amorphous carbon layer from a first resistivity level to a second resistivity level. 11 · As claimed in claim i The electronic device, wherein the pair of electrodes each have a thickness of from about 20 angstroms to about 1 angstrom. The apparatus of claim 1, wherein the pair of electrodes comprises a crane. The electronic device of claim 1, wherein the electronic device comprises a memory. 14. The electronic device of claim 13, wherein the memory is in an encapsulated integrated circuit. The electronic device includes an amorphous carbon layer disposed on a substrate, the amorphous carbon layer comprising a hydrogen content of at least about 3 atomic percent and one of less than about 1 X 1 〇·9 amps The maximum leakage current is formed by a method for forming the amorphous carbon layer. The method comprises the steps of: (a) placing the substrate in a processing zone; (b) maintaining the substrate at a temperature of less than 30 (TC) (c) introducing a process gas to The process gas in the treatment zone comprises a carbonaceous gas and a diluent gas; (d) maintaining the process gas at a pressure of from about 5 Torr to about 1 Torr; and (e) forming a plasma from the process gas. 16. — A method of depositing an amorphous carbon layer on a slab using jfe — ^, the method comprising the steps of: 38 201230305 (a) placing the substrate in a processing zone; () maintaining the substrate in At a temperature less than 300 ° C; (0 introducing a process gas into the treatment zone, the process gas comprises - a carbonaceous gas and a diluent gas; and maintaining the process gas at about 〇S5 Torr to about 20 And (d) self-twisting the process gas by applying a first RF power to the electrode surrounding the processing region at a first frequency and applying a second RF power to the substrate at a second frequency An electrical stagnation is formed, wherein the second frequency is lower than the first frequency. The method of claim 6, wherein the processing condition is set to deposit an amorphous carbon layer comprising at least about 3 atomic percent of hydrogen and less than about 1 X 丨〇 One of the maximum leakage currents of -9 amps. 18. The method of claim 16, wherein the first frequency is about Η" ΜΗζ ' and the second frequency is less than 1 MHz. 19. The method of claim 18, wherein the method further comprises the step of spacing the electrodes at a separation distance of from about 200 mils to about 1000 mils. 20. The method of claim 6, wherein the method comprises the step of applying one of the first RF power and the second RF power at a power level of about 100 watts to about 2000 watts. The method of claim 16, wherein the carbon-containing gas comprises CxHy, wherein X is from 1 to 10 and y is from 2 to 30, or a mixture of such gases. 22. The method of claim 16, wherein the carbon-containing gas comprises CxHyNz, wherein X is from 1 to 10, y is from 2 to 30, and z is from 1 to 10, or a mixture of such gases. 23. The method of claim 16, wherein the carbon-containing gas comprises triethylamine. 24. The method of claim 16, wherein the diluent gas comprises argon, helium, gas or nitrogen. 40