TW200931538A - Thermal process system of semiconductor components - Google Patents

Thermal process system of semiconductor components Download PDF

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Publication number
TW200931538A
TW200931538A TW097150338A TW97150338A TW200931538A TW 200931538 A TW200931538 A TW 200931538A TW 097150338 A TW097150338 A TW 097150338A TW 97150338 A TW97150338 A TW 97150338A TW 200931538 A TW200931538 A TW 200931538A
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TW
Taiwan
Prior art keywords
furnace
plate
moving
coupled
heat treatment
Prior art date
Application number
TW097150338A
Other languages
Chinese (zh)
Other versions
TWI397127B (en
Inventor
Hyoung-June Kim
Dong-Hoon Shin
Won-Hak Cho
Young-Kyu Hong
Original Assignee
Viatron Technologies Inc
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Publication of TW200931538A publication Critical patent/TW200931538A/en
Application granted granted Critical
Publication of TWI397127B publication Critical patent/TWI397127B/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Robotics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The present invention relates to a thermal process system of semiconductor components, which is realized through a furnace with a two-layer load to shrink the total length of the system and thereby reduce the installation space of the system. Therefore, the thermal process system of semiconductor components of this invention comprises: a loading part; thermal process parts and a buffer elevator part. The thermal process system of semiconductor components utilizes the loading part to load semiconductor components, the buffer elevator part to transport the semiconductor components to the upper and lower thermal process parts of the furnace, and the thermal process parts to thermally process the semiconductor components.

Description

200931538 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種藉由兩層地裝載加熱爐，而縮短系 - 統全長，可減少系統之設置空間的半導體元件之熱處理系 • 統者。 - - . 【先前技術】 在平板顯示裝置中，.液晶顯示裝置（Liquid Crystal ® Display)或是有機發光顯示器（Organic Light EmittingBACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat treatment system for a semiconductor element which can reduce the total length of the system by reducing the total length of the system by loading the heating furnace in two layers. - - . [Prior Art] In a flat panel display device, a liquid crystal display device (Liquid Crystal ® Display) or an organic light emitting display (Organic Light Emitting)

Display)之活性元件包含形成於玻璃基板表面之薄膜電晶 體(Thin Film Transistor)而形成。一般而言，該薄膜電晶體 係使非晶質矽薄膜蒸鍍於透明之玻璃基板或石英基板表 面後’使其結晶化成結晶矽薄膜，其中注入必要之摻雜劑 (dopant)使其活化而形成。 一般而言，此種形成於玻璃基板之非晶質石夕薄膜一般 ❺ 而言係藉由化學蒸鍵法（Chemical Vapor DepositionThe active element of Display) is formed by a thin film transistor formed on the surface of the glass substrate. In general, the thin film electro-crystal system vaporizes an amorphous tantalum film on a transparent glass substrate or a quartz substrate surface, and then crystallizes it into a crystalline germanium film, in which a necessary dopant is implanted to activate it. form. In general, the amorphous diarrhea film formed on the glass substrate is generally chemically vaporized by chemical vaporization (Chemical Vapor Deposition).

Method: CVD)而形成’藉由指定之熱處理過程結晶化成多 結晶矽薄膜，並注入必要之摻雜劑而活化。 - 非晶質矽薄膜結晶化之方法已經提出有各種方法， • 有：固態結晶化方法（Solid Phase Crystallization: SPC)、金 屬感應結晶化方法(Metal Induced Crystallization: MIC)、 準分子雷射結晶化方法（Excimer Laser Crystallization: ELC)等。 而摻雜劑活化工序與非晶質矽薄膜之結晶化方法類 200931538 似，係使用雷射照射或熱處理方法。如有：準分子雷射退 火(Excimer Laser Annealing: ELA)方法、急速退火(Rapid Thermal Annealing: RTA)方法、或是爐退火（Furnace .Method: CVD) is formed by crystallizing into a polycrystalline germanium film by a specified heat treatment process, and injecting necessary dopants to activate. - Amorphous ruthenium film crystallization method has been proposed in various ways, including: Solid Phase Crystallization (SPC), Metal Induced Crystallization (MIC), Excimer Laser Crystallization Method (Excimer Laser Crystallization: ELC) and the like. The dopant activation step is similar to the method for crystallizing an amorphous tantalum film, such as laser irradiation or heat treatment. For example: Excimer Laser Annealing (ELA) method, Rapid Thermal Annealing (RTA) method, or furnace annealing (Furnace.

Annealing: FA)方法等。 如此，為了利用熱處理將形成於玻璃基板之非晶質石夕 薄膜、结晶化’並注入掺雜劑使其活化，而具備熱處理系統。. 先前之熱處理系統，其複數個熱處理爐各個係以獨立 之構造而相互連結。然而，因為構成熱處理系統之複數個 熱處癦爐通常係各個排列成一列，所以在設置系統時的問 題是會受到空間限制° 【發明内容】 (發明所欲解決之問題） 本發明之目的為提供一種藉由兩層地裝載加熱爐而 縮短系統全長，可減少系統之設置空間的半導體元件之熱 處理系統。 (解決問題之手段） 為了達成此種目的所完成之本發明的熱處理形成了 半導體元件之基板的半導體元件之熱處理系統的特徵為 包含：載入部，其係具備可移動之基板輸送板；熱處理部， 其係具備.位於熱處理部框架之上部的上部爐、位於前述 上部爐之下部的下部爐、及連結於前述上部爐或前述下部 爐之務動爐，從前述載入部接收前述基板，而以前述上部 爐、前述移動爐及前述下部爐實施熱處理；及緩衝升降機 部，其係具備：裝載前述移動爐而可移動之水平移動輸送 200931538 板，及設於前述水平移動輸送板之下部而可移動的垂直 動輸运板，使前述水平㈣輸送板與前述垂直移動輪送 移動，而使前述移動爐連結於前述上部爐或前述下部姨。 ' 前述上部爐、下部爐及移動爐分別由至少1個以上Annealing: FA) method, etc. In this manner, a heat treatment system is provided in order to activate the amorphous Austenite film formed on the glass substrate by heat treatment and inject a dopant to activate it. In the prior heat treatment system, each of the plurality of heat treatment furnaces was connected to each other in an independent configuration. However, since a plurality of hot-spot furnaces constituting the heat treatment system are usually arranged in a row, the problem in setting the system is that space is limited. [Explanation] (Problems to be Solved by the Invention) The object of the present invention is Provided is a heat treatment system for a semiconductor element which can reduce the total length of a system by loading a heating furnace in two layers and reduce the installation space of the system. (Means for Solving the Problem) The heat treatment system of the semiconductor element in which the substrate of the semiconductor element is formed by heat treatment of the present invention, which is completed for the purpose, is characterized by comprising: a loading portion provided with a movable substrate transfer plate; heat treatment And a lower furnace located at an upper portion of the upper portion of the heat treatment portion, a lower furnace located at a lower portion of the upper furnace, and a furnace connected to the upper furnace or the lower furnace, and receiving the substrate from the loading portion. Further, the upper furnace, the moving furnace, and the lower furnace are subjected to heat treatment; and the buffer elevator unit includes: a horizontally movable transporting 200931538 plate that is movable by loading the moving furnace, and a lower portion of the horizontal moving conveying plate. The movable vertical moving transport plate moves the horizontal (four) transporting plate and the vertical moving wheel to connect the moving furnace to the upper furnace or the lower casing. 'The above upper furnace, lower furnace and moving furnace are respectively made of at least one or more

加熱爐(furnace)而構成，前述加熱爐之内部如由石英 - 組成。： M * 以則述基板可在前述上部爐、前述下部爐及前述移動 ❹ @之間往來的方式’而在彼此相對之前述上部爐中的最後 加熱爐，與前述移動爐中之加熱爐的各個側面，及在與前 述移動爐中之加熱爐相對的前述下部爐中第_個加麵爐 的側面具備閘門。 前述閘門可包含：本體部，其係成為外觀而形成板 狀；=，、其係在前述本體部中形成溝狀，使前述基板可出 入於刚述加熱爐；快門板，其係設於前述本體部，可開關 刖述閘’ A缸’其係安裝於前述快門板之下部，而使前述 ® ㈣板移動；及LM導桿’其細與前述快Η板連結之形 態設於前述快門板之兩側，於前述快門板移動時導引前述 快門板均衡地滑動。 ： 冑述快門板可由從石英、不透明石英、氧德、陶究 • •玻璃及碳複合材料選出之任何β㈣成。 前述本體部可由銘材質而形成。 前述閘門可進一步包含以捲起之形態設於前述本體 部，而由銅材質組成之管。 刚述載入口Ρ可包含.成為外觀之載入部框架；伺服馬 5 200931538 達，其係設於前述載入部框架之内部的下部，並藉由施加 電源而驅動；等徑錐齒輪，其係與前述伺服馬達連結，並 藉由前述伺服馬達之驅動而旋轉；蜗桿減速器，其係具有· 垂直地接觸之二軸，分別設於前述等徑錐齒輪的兩侧，一 轴與前述等徑錐齒輪連結’並藉由前述等徑錐齒輪之旋轉 而旋轉；滾珠絲槓’其係連結於前述堝样減速器之另一-轴’延伸於前述載入部之上部，而與前述基板輸送板連 . 結’藉由前述堝桿減速器之旋轉而旋轉，使前述基板輸送❹ 板上下移動；及LM導桿，其係與前述滾珠絲槓平行地設 於前述滾珠絲槓之兩侧，與前述基板輸送板連結，於前述 基板輸送板移動時導引前述基板輸送板均衡地滑動。 前述載入部可進一步包含：位置感測器，其係分別設 於前述載入部框架之内部的上部及下部，感測前述基板輸 送板之上下移動位置；及回復原位感測器，其係設於在前 述載入部框架之内部成為前述基板輸送板之原點的位 置’感測前述伺服馬達可捕捉前述基板輸送板之原點。 〇 前述緩衝升降機部包含：垂直移動部，其係在成為外 觀之緩衝升降機部框架内，使前述移動爐移動於垂直方 向；及水平移動部，其係使前述移動爐移動於水平方向。 -'前述垂直移動部可包含：第一伺服馬達，其係設於前 · 述緩衝升降機部框架之内部的下部，並藉由施加電源而驅 動；等徑錐齒輪，其係與前述第一伺服馬達連結，並藉由 前述第一伺服馬達之驅動而旋轉；蝸桿減速器，其係具有 垂直地接觸之二軸，分別設於前述等徑錐齒輪的兩側，一 6 200931538 轴與前述等徑錐齒輪連結，並藉由前述等經錐齒輪之旋轉 而旋轉；第-滾珠絲槓，其係連結於前述蜗桿減速器之另 -軸，延伸於前述緩衝升降機部之上部，而與前述垂直移 動輸送板連結，藉由前述蜗桿減速器之旋轉而旋轉，使前 .述垂直移動輸送板上下移動；及第一 LM導桿，其係與前 : ㉛第—滾珠_平行地設於前述第-滾珠絲槓之兩側，斑 • 前述垂直移動輸送板連結，於前述垂直移動輸送板移動時 ❹ 導引前述垂直移動輸送板均衡地滑動。 前述垂直移動部可進一步包含：位置感測器 ，其係分 別設於前述緩衝升降機部框架之内部的上部及下部，感測 前述垂直移動輸送板之上下移動位置；及回復原位感測 器，其係設於在前述緩衝升降機部框架之内部成為前述蜜 直移動輸送板之原點的位置，感測前述第一伺服馬達<捕 捉前述垂直移動輸送板之原點。 D 祕水平移動部可包含H服馬達，其係設於前 述水平移動輸送板與前述垂直移動輸送板之間，並藉由施 加電源而驅動；第二滾珠絲槓，其係與前述第二祠服馬達 連結’藉由前述第二伺服馬達之驅動而旋轉，使前述水命 移動輸送板左右移動；及第二⑽導桿，其係與前述第二 滚珠絲槓平行地設於前述第二滾珠絲槓的兩側’並與前述 水平移動輸送板連結，於前述水平移動輸送板移動時，導 引前述水平移動輸送板均衡地滑動^ (發明之效果） 本發明之半導體TG件的熱處理系統，可藉由兩層地装 7 200931538 載熱處理形成了半導體元件之基板的加熱爐，而縮短系統 全長。因此’於設置系統時可減少必要之空間，而可提高 對系統之設置空間的活用度。 【實施方式】 以下’參照圖式’並藉由實施例更詳細地說明本發 明’不過’本發明並非藉由此等實施例而限定者。 第一圖係本發明一種實施例的半導體元件之熱處理 系統的構成圖。 如第一圖所示，本發明一種實施例的半導體元件之熱 處理系統由可連續實施工序地連結一連串裝置的聯機 (in-line)系統而組成〇 更詳細而言，本發明一種實施例的半導體元件之熱處 理系統包含：載入部100、熱處理部200及緩衝升降機部 300。半導體元件之熱處理系統將熱處理之半導體元件， 藉由載入部100及緩衝升降機部300輸送至上下兩層地裝 載加熱爐之熱處理部200實施熱處理。藉由半導體元件之 熱處理系統實施熱處理的半導體元件，係指需要實施熱處 理之各種半導體元件，且包含在上部形成了非晶質矽薄膜 之玻璃基板、及形成了多結晶矽TFT (薄膜電晶體）之玻 璃基板。此外，半導體元件包含為了在上面形成半導體薄 膜而鬵要先收縮(pre-compaction)的玻璃基板。以下，就 丰導· It ~ _ %件係形成了非晶質矽薄膜之玻璃基板的情況作 說明。 ^'先’就半導體元件之熱處理系統的載入部丨00之構 200931538 成作說明。 第二a圖係圖示第一圖所示之載入部的詳細構成之前 視圖，而第二b圖係沿著第一圖之A —A線而切斷之載入 - 部的侧面圖。 如第二a圖及第二b圖所示，載入部1⑻在成為外觀 之載入部框架105内包含：伺服馬達(servo motor)110、等 . 徑錐齒輪(111以1吕6&1>)120、蝸桿減速器（1^]：111代(111〇6]：)130、 ❹ 滾珠絲槓作&1丨5(^〜)140、基板輸送板(361^1：)150、1^導 桿（LM(Linear Motion)guide)160、位置感測器（position sensor) 170及回復原位感測器（home sensor)l80。此種載入 部100擔任從機器人（robot;無圖示）接收玻璃基板而輸 送至熱處理部200的角色。 伺服馬達110設於載入部框架105内部之下部，並藉 由施加電源（無圖示）而驅動。該伺服馬達11〇擔任控制 後述之基板輸送板150的上下移動之角色。 © 等徑錐齒輪120與祠服馬達11 〇連結，並藉由伺服馬 達110之驅動而旋轉。該等徑錐齒輪120擔任使連結於兩 侧之蝸桿減速器130的旋轉同步化之角色。 * 蝸桿減速器I30分別設於等徑錐齒輪120之兩侧，而 • 分別與等徑錐齒輪120連結。具體而言，蜗桿減速器130 由在垂直地接觸之一軸間傳達旋轉運動的齒輪組成，蜗桿 減速器130之一轴與等徑錐齒輪120連結。蝸捍減速器I% 之一軸藉由伺服馬達11〇之驅動而旋轉的等徑錐齒輪120 來旋轉。該禍桿減速器130擔任藉由控制一軸之旋轉運動 200931538 的次數，以防止基板輸送板150自由落下的角色。此外， 蜗桿減速器丨30藉由等徑錐齒輪120而將旋轉同步化。在 此’於等徑錐齒輪120之兩侧設置2個蜗桿減速器130。 · 滚珠絲槓140連結於蜗桿減速器Go之另一軸，且延. 伸至載入部10〇之上部而形成。連結於該螞桿減速器130 之另一軸的滚珠絲槓140 ’於與等徑錐齒輪12〇連結之堝 . 桿減速器130的一軸旋轉時同時旋轉。在此，因為滾珠絲 ， 槓140連結於蜗桿減速器13Θ而形成，所以設置成相應於 蝸桿減速器130之數量的數量。該滾珠絲槓140與基板輸〇 送板150連結，於旋轉時可實質地上下移動基板輸送板 150。此外’滾珠絲槓140藉由連結於等徑錐齒輪12〇兩 側之蝸桿減速器130的同時旋轉，避免基板輸送板1傾 斜於一侧’而藉由使基板輸送板15〇全體同時垂直移動， 可在水平地維持情況下垂直移動基板輸送板丨5〇。 基板輸送板150形成板狀，與滚珠絲槓140連結，並 藉由滚珠絲相140之旋轉’而在載入部1 〇〇内上下地移❹ 動。該基板輸送板150擔任藉由滚珠絲槓14〇之旋轉而將 從機器人（robot ;無圖示）接收之玻璃基板輸送至熱處理 部200中的預定位置之角色。 · LM導桿160與滚珠絲槓140平行地設於滾珠絲槓14〇 : 的兩側’以與基板輸送板150連結之形態，在載入部1〇〇 之垂直方向，亦即從上部延伸至下部而形成。該LM導桿 160於基板輸送板150上下移動時，擔任導引基板輸送板 150均衡地滑動之角色。 200931538 位置感測器170分別設於載入部框架105之内部的上 部及下部，而擔任感測基板輸送板150之上下移動位置的 角色。 回復原位感測器180設於在載入部框架1〇5之内部成 為基板輸送板150之原點的位置，而擔任感測飼服馬達 110可捕捉基板輸送板150之原點的角色。 其次’就熱處理藉由載入部100輸送之玻璃基板的熱 處理部200之構成作說明。 如第一圖所示，熱處理部200包含：上部爐220、下 部爐230及移動爐240而構成。該熱處理部2〇〇兩層地裝 载上部爐220與下部爐230，擔任減少半導體元件之熱處 理系統的設置空間之角色。 上部爐220位於熱處理部框架210之上部，考慮玻璃 基板之熱處理.溫度’而以適當數量的加熱爐（furnace)構 成’並由至少1個以上之加熱爐，如第一圖所示，係由3 個加熱爐而組成。該上部爐220係用於從載入部1〇〇接收 玻璃基板而實施熱處理者，各加熱爐藉由玻璃基板之熱處 理溫度’各個階段不同地維持在適當溫度而獨立地控制。 此外’上部爐220宜將熱處理玻璃基板之加熱爐中最後加 熱爐的没定溫度設定成玻璃基板的熱處磕溫度，而以上部 爐220進行一部分熱處理。在此，玻璃基板藉由機器人安 放於載入部100中包含的基板輸送板150上’並輸送至上 部爐220之第一個加熱爐開始實施熱處理。 下部爐230位於熱處理部框架21〇之内部，亦即位於 200931538 上4爐220之下部’並與上部爐220同樣地由至少1個以 上之加熱爐’如第一圖所示係由3個加熱爐而組成。該下 部爐230使以上部爐22〇加熱後之玻璃基板冷卻至不變形-之指定溫度以下。下部爐23〇於使玻璃基板階段性地冷卻 至充分低溫度時，可增設加熱爐的數量。下部爐23〇之加 熱爐階段性地設定成比玻璃基板之熱處理溫度低的溫度 - 而維持’將輸送之玻璃基板冷卻而維持在指定溫度。在 ： 此’玻璃基板並非從上部爐220立刻輸送至下部爐230， 而係從上部爐22〇經過移動爐240而輸送至下部爐23〇。 〇 移動爐240由加熱爐構成，並以裝載於設於後述之緩 衝升降機部300的垂直移動輸送板315之上部的水平移動 輸送板325之狀態設置，藉由垂直移動輸送板315之上下 移動及水平移動輸送板325之左右移動而與上部爐220連 結，或是與下部爐230連結。該移動爐240從上部爐220 接收玻璃基板，將玻璃基板實施熱處理，並藉由緩衝升降 機部300下降’而輸送玻璃基板至下部爐230。 〇 另外’上述之加熱爐的内部係以遇熱幾乎不變形之石 英材質而形成。 其次’就玻璃基板可在上部爐220、下部爐230及移 ， 動爐240間往來地設於加熱爐的閘門250作說明。 ·： 第三圖係第一圖所示之閘門的斜視圖。 如第三圖所示，閘門250形成於彼此相對之前述上部 爐220中最後之加熱爐與移動爐240中之加熱爐的各個侧 面，及與移動爐240之加熱爐相對之下部爐230中第一個 12 200931538 加熱爐的侧面。該閘門250包含：本體部251、閘252、 快門板253、汽缸255、LM導桿257及管259而構成。 本體部251成為閘門250之外觀，而形成板狀。該本 體部251由重量輕且具有耐腐蝕性之如鋁材質而組成。 閘252形成於本體部251，且由比玻璃基板大之溝狀 組成，可使玻璃基板出入加熱爐。 ΟThe furnace is constructed by a furnace, and the inside of the heating furnace is composed of quartz. : M * is a final heating furnace in the upper furnace opposite to each other in a manner in which the substrate can be moved between the upper furnace, the lower furnace, and the moving furnace, and the heating furnace in the moving furnace Each side surface and a side surface of the first kneading furnace in the lower furnace opposed to the heating furnace in the moving furnace are provided with a gate. The shutter may include a main body portion that is formed into a plate shape by appearance, and a groove shape formed in the main body portion, so that the substrate can be inserted into a heating furnace; the shutter plate is provided in the foregoing The main body portion, the switchable switch 'A cylinder' is mounted on the lower portion of the shutter plate to move the aforementioned (4) plate; and the LM guide rod is connected to the shutter plate in a form of the thin shutter plate On both sides, the shutter plate is guided to slide evenly when the shutter plate moves. : The shutter plate can be made of any β (four) selected from quartz, opaque quartz, oxygen, ceramics, glass and carbon composites. The body portion may be formed of a material of the name. The gate may further include a tube made of a copper material in a form of being rolled up on the body portion. The loading port Ρ can include a loading frame that becomes the appearance; the servo horse 5 200931538 is provided in the lower part of the inside of the loading frame and is driven by applying a power source; the bevel gear, It is coupled to the servo motor and rotated by the driving of the servo motor; the worm reducer has two shafts that are vertically contacted, and are respectively disposed on two sides of the equal-diameter bevel gear, one shaft and The equal-diameter bevel gear is coupled and rotated by rotation of the equal-diameter bevel gear; the ball screw 'connected to the other-axis of the aforementioned-type reducer extends over the upper portion of the loading portion, and The substrate transporting plate connection knot is rotated by the rotation of the mast reducer to move the substrate conveyance plate up and down, and the LM guide rod is disposed in parallel with the ball screw on the ball screw. Both sides are coupled to the substrate transporting plate, and guide the substrate transporting plate to slide evenly while the substrate transporting plate moves. The loading unit may further include: a position sensor respectively disposed at an upper portion and a lower portion of the inside of the loading portion frame, sensing an upper moving position of the substrate conveying plate; and returning an in-situ sensor, The position at which the inside of the loading unit frame becomes the origin of the substrate transporting plate senses that the servo motor can capture the origin of the substrate transporting plate.缓冲 The buffer elevator unit includes a vertical moving unit that moves the moving furnace in a vertical direction in a frame of the external buffer unit, and a horizontal moving unit that moves the moving furnace in a horizontal direction. - The aforementioned vertical moving portion may include: a first servo motor that is disposed at a lower portion of the interior of the buffer elevator portion frame and driven by a power supply; the bevel gear is coupled to the first servo The motor is coupled and rotated by the driving of the first servo motor; the worm reducer has two shafts that are vertically contacted, and are respectively disposed on two sides of the equal-diameter bevel gear, a 6 200931538 shaft and the aforementioned equal diameter The bevel gear is coupled and rotated by the rotation of the bevel gear; the first ball screw is coupled to the other shaft of the worm reducer and extends over the upper portion of the buffer elevator portion and is perpendicular to the foregoing The moving conveying plate is coupled and rotated by the rotation of the worm reducer to move the front vertical moving conveying plate to the lower plate; and the first LM guiding rod is disposed in parallel with the front: 31 first ball _ On both sides of the first ball screw, the plaques are connected to the vertically moving conveying plates, and the vertical moving conveying plates are guided to slide evenly when the vertically moving conveying plates are moved. The vertical moving portion may further include: a position sensor respectively disposed at an upper portion and a lower portion of the interior of the buffer elevator portion frame, sensing an upper moving position of the vertically moving conveying plate; and returning the in-situ sensor, The first servo motor is sensed to be positioned at an origin of the honey-moving transporting plate inside the buffer elevator frame, and the origin of the vertical moving transporting plate is captured. The D secret horizontal moving portion may include an H service motor that is disposed between the horizontal moving conveying plate and the vertically moving conveying plate and driven by applying a power source; the second ball screw is coupled to the second wire The motor connection 'rotates by the driving of the second servo motor to move the water moving transporting plate to the left and right; and the second (10) guiding rod is disposed on the second ball in parallel with the second ball screw The two sides of the lead screw are coupled to the horizontal moving conveying plate, and guide the horizontal moving conveying plate to slide evenly when the horizontal moving conveying plate moves. (Effect of the invention) The heat treatment system of the semiconductor TG member of the present invention, The entire length of the system can be shortened by heat-treating the substrate on which the semiconductor element is formed by heat-treating the two layers of 200931538. Therefore, the necessary space can be reduced when the system is set, and the utilization of the system space can be improved. [Embodiment] The present invention is described in more detail below with reference to the drawings. However, the present invention is not limited by the embodiments. The first figure is a configuration diagram of a heat treatment system for a semiconductor element of an embodiment of the present invention. As shown in the first figure, a heat treatment system for a semiconductor element according to an embodiment of the present invention is composed of an in-line system in which a series of devices can be continuously implemented in a process. More specifically, a semiconductor of an embodiment of the present invention The heat treatment system of the component includes a loading unit 100, a heat treatment unit 200, and a buffer elevator unit 300. The heat treatment system for the semiconductor element heat-treats the heat-treated semiconductor element by the loading unit 100 and the buffer elevator unit 300 to the heat treatment unit 200 of the upper and lower layers of the loading furnace. A semiconductor element that is subjected to heat treatment by a heat treatment system of a semiconductor element is a semiconductor element that needs to be subjected to heat treatment, and includes a glass substrate in which an amorphous germanium film is formed on the upper portion, and a polycrystalline germanium TFT (thin film transistor) is formed. The glass substrate. Further, the semiconductor element includes a glass substrate which is pre-compacted in order to form a semiconductor film thereon. Hereinafter, a case will be described in which the glass substrate of the amorphous tantalum film is formed by the Fengyue·It~_%. ^ 'First' is the description of the loading unit 丨00 of the heat treatment system for semiconductor components 200931538. The second diagram is a front view showing the detailed configuration of the loading portion shown in the first figure, and the second diagram is a side view of the loading-part portion cut along the line A-A of the first diagram. As shown in the second diagram and the second diagram, the loading unit 1 (8) includes a servo motor 110, a bevel motor, and the bevel gear (111 by 1 Lu 6 &1>;) 120, worm reducer (1^]: 111 generation (111〇6]:) 130, 滚 ball screw for & 1丨5 (^~) 140, substrate conveying plate (361^1:) 150, 1^Linear Motion guide 160, position sensor 170 and home sensor l80. This loading unit 100 acts as a slave robot (robot; no picture) The receiving glass substrate is transported to the role of the heat treatment unit 200. The servo motor 110 is provided below the inside of the loading unit frame 105, and is driven by applying a power source (not shown). The servo motor 11 is controlled as follows. The role of the substrate transporting plate 150 moving up and down. © The bevel gear 120 is coupled to the motor 11 , and rotated by the drive of the servo motor 110. The bevel gear 120 serves to decelerate the worm coupled to both sides. The role of the rotation synchronization of the device 130. * The worm reducer I30 is respectively disposed on both sides of the bevel gear 120, and Specifically, the worm reducer 130 is composed of a gear that transmits a rotational motion between one of the shafts in vertical contact, and one of the shafts of the worm reducer 130 is coupled to the equal-diameter bevel gear 120. One of the shaft reducers I% is rotated by the bevel gear 120 that is rotated by the drive of the servo motor 11A. The rod reducer 130 serves as a number of times by controlling the rotational motion of the one shaft 200931538 to prevent the substrate conveying plate 150 In addition, the worm reducer 丨30 synchronizes the rotation by the equal-diameter bevel gear 120. Here, two worm reducers 130 are disposed on both sides of the equal-diameter bevel gear 120. · Ball wire The bar 140 is coupled to the other shaft of the worm reducer Go, and extends to the upper portion of the loading portion 10A. The ball screw 140' coupled to the other shaft of the rod reducer 130 is formed with an equal diameter cone. The gear 12 is coupled to the shaft. The shaft reducer 130 rotates while rotating one shaft. Here, since the ball 140 is coupled to the worm reducer 13A, the number is corresponding to the number of the worm reducer 130. The ball screw 140 The substrate transporting plate 150 is coupled to the substrate transporting plate 150. The ball screw 140 is rotated by the simultaneous rotation of the worm reducer 130 coupled to both sides of the bevel gear 12 ,. The substrate transporting plate 1 is inclined to one side', and by vertically moving the entire substrate transporting plate 15 ,, the substrate transporting plate 丨 5 垂直 can be vertically moved while being horizontally maintained. The substrate transporting plate 150 is formed in a plate shape, coupled to the ball screw 140, and moved up and down in the loading portion 1 by the rotation of the ball wire phase 140. The substrate transporting plate 150 serves to transport the glass substrate received from the robot (robot; not shown) to a predetermined position in the heat treatment unit 200 by the rotation of the ball screw 14 turns. The LM guide 160 is disposed in parallel with the ball screw 140 on both sides of the ball screw 14〇: in a form of being coupled to the substrate conveying plate 150, in the vertical direction of the loading unit 1〇〇, that is, extending from the upper portion Formed to the lower part. When the substrate transporting plate 150 moves up and down, the LM guide 160 serves as a guide substrate transporting plate 150 to slide evenly. 200931538 The position sensors 170 are respectively disposed at the upper and lower portions of the inside of the loading unit frame 105, and serve to sense the upper and lower moving positions of the substrate conveying plate 150. The return home position sensor 180 is disposed at a position where the inside of the loader frame 1〇5 becomes the origin of the substrate transporting plate 150, and serves as a function of the sensing feeding motor 110 to capture the origin of the substrate conveying plate 150. Next, the configuration of the heat treatment unit 200 for heat-treating the glass substrate conveyed by the loading unit 100 will be described. As shown in the first figure, the heat treatment unit 200 includes an upper furnace 220, a lower furnace 230, and a moving furnace 240. The heat treatment unit 2 mounts the upper furnace 220 and the lower furnace 230 in two layers, and functions as a space for reducing the heat treatment system of the semiconductor element. The upper furnace 220 is located above the heat treatment portion frame 210, and is formed by a suitable number of furnaces in consideration of the heat treatment temperature of the glass substrate, and is composed of at least one or more heating furnaces, as shown in the first figure. It consists of 3 heating furnaces. The upper furnace 220 is used to receive a glass substrate from the loading unit 1 to perform heat treatment, and each of the heating furnaces is independently controlled by maintaining the temperature at a suitable temperature in each stage of the heat treatment of the glass substrate. Further, the upper furnace 220 preferably sets the temperature of the final heating furnace in the heating furnace for heat-treating the glass substrate to the heat temperature of the glass substrate, and the upper furnace 220 performs a part of the heat treatment. Here, the glass substrate is placed on the substrate transfer plate 150 included in the loading unit 100 by the robot and transported to the first heating furnace of the upper furnace 220 to start the heat treatment. The lower furnace 230 is located inside the heat treatment portion frame 21, that is, at the lower portion of the 4 furnace 220 at 200931538 and is composed of at least one or more heating furnaces as in the upper furnace 220. Composed of a furnace. The lower furnace 230 cools the glass substrate heated by the upper furnace 22 to a temperature below a predetermined temperature. When the lower furnace 23 is cooled in a stepwise manner to a sufficiently low temperature, the number of furnaces can be increased. The heating furnace of the lower furnace 23 is set to a temperature lower than the heat treatment temperature of the glass substrate - and the glass substrate to be conveyed is cooled and maintained at a predetermined temperature. The glass substrate is not immediately transported from the upper furnace 220 to the lower furnace 230, but is transported from the upper furnace 22 to the lower furnace 23 through the moving furnace 240. The moving furnace 240 is constituted by a heating furnace and is provided in a state of being horizontally moved by a horizontally moving conveying plate 325 mounted on an upper portion of a vertically moving conveying plate 315 provided in a buffer elevator unit 300, which will be described later, by vertically moving the conveying plate 315 up and down and The horizontal movement conveying plate 325 is moved to the left and right to be coupled to the upper furnace 220 or to the lower furnace 230. The moving furnace 240 receives the glass substrate from the upper furnace 220, heat-treats the glass substrate, and transports the glass substrate to the lower furnace 230 by the lowering of the buffer elevator unit 300. 〇 In addition, the inside of the above-mentioned heating furnace is formed of a quartz material which is hardly deformed by heat. Next, the description will be made on the gate 250 in which the glass substrate can be placed between the upper furnace 220, the lower furnace 230, and the shift furnace 240 in the heating furnace. ·: The third picture is an oblique view of the gate shown in the first figure. As shown in the third figure, the gate 250 is formed on each side of the furnace in the last furnace 220 and the moving furnace 240 opposite to each other, and in the lower furnace 230 opposite to the furnace of the moving furnace 240. A side of the 12 200931538 heating furnace. The shutter 250 includes a main body portion 251, a shutter 252, a shutter plate 253, a cylinder 255, an LM guide 257, and a tube 259. The main body portion 251 has an appearance of the shutter 250 and is formed in a plate shape. The body portion 251 is composed of a lightweight material and a corrosion-resistant material such as aluminum. The gate 252 is formed in the main body portion 251 and is composed of a groove larger than the glass substrate, so that the glass substrate can be taken into the heating furnace. Ο

快門板253設於本體部251，可開關閘252。因為該 快門板253設於高溫地設定之加熱爐的内部，所以由從石 英、不透明石英、氧化銘、陶瓷玻璃及礙複合材料選出之 任何1個而形成，即使沒有冷卻水，仍不致因高溫之熱而 變形。 汽缸2 5 5安裝於快門板2 5 3之下部，擔任使快門板2 5 3 上下移動之角色。亦即，汽缸255使快門板253上下移動， 使快門板253可開關閘252。 LM導桿257以與快門板253連繫之形態而設於快門 板253的兩側。該LM導桿257於快門板253上下移動時， 擔任導引快門板253均衡地滑動之角色。 S 259以捲起之形態而設於本體部251，並由銅材 =259提供使冷卻水循環之路徑，而擔任防 本體邛251因高溫而變形的角色。 送至St 了從移動爐240將熱處理後之玻璃基板 减3〇，使移動爐240移動而.連結於下部爐2 的緩衝升降機部300作說明。 、 第四a圖係圖示第一圖所示之緩衝升降機部的詳細 13 200931538 成之前視圖’而第四b圖係沿著第-圖中之B〜B線而切 斷之緩衝升降機部的側面圖。 如第四a圖及第四b圖所示，緩衝升降機部3〇〇在成· 為外觀之緩衝升降機部框架305内包含：使移動爐240移. 動於垂直方向之垂直移動部，與使移動爐240移動於水平 方向之水平移動部而構成。 . 垂直移動部包含：第一伺服馬達(servo motor)311、等 · 仏錐齒輪(miter gear)312、蜗桿減速器（warm reducer)313、-第一滾珠絲槓（ball screw)3i4、垂直移動輸送板 (如如)315、第一1^導桿(1^(1^1168114(^〇11)8111(16)316、 位置感測器（position sensor)317及回復原位感測器（home sensor)318而構成。第一伺服馬達311設於緩衝升降機部 框架305之内部的下部，並藉由施加電源（無圖示）而驅 動。該第一伺服馬達311擔任控制後述之垂直移動輸送板 315的上下移動之角色。 等徑錐齒輪312與第一伺服馬達311連結，並藉由第 〇 一伺服馬達311之驅動而旋轉《該等徑錐齒輪312擔任使 與等徑錐齒輪312連結之蝸桿減速器313的旋轉同步化之 角色。在此，等徑錐齒輪312係考慮固定於垂直移動輸送 ， 板315之重的移動爐240而設2個，不過並非限定等徑錐 * 齒輪312之數量。 蝸桿減速器313分別設於等徑錐齒輪312之兩侧’且 各個與等徑錐齒輪312連結。具體而言，堝桿減速器313 由在垂直地接觸之二軸間傳達旋轉運動的齒輪而組成’堝 200931538 桿減速器313之一軲與等徑錐齒輪312連結。媧桿滅速器 313之一轴藉由第一伺服馬達311之驅動而旋轉的等牲錐 齒輪312來旋轉。該蝸桿減速器313藉由控制一轴之旋轉 ‘ 運動的次數，而擔任防止垂直移動輸送板315自由落下的 角色。此外，蝸桿減速器313藉由等徑錐齒輪312而將旋 : 轉同步化。在此，因為蝸桿減速器313設於2個等徑錐齒 輪312之兩側，所以設了 4個。 ❹ 第一滾珠絲槓3Ϊ4連結於蝸桿減速器313之另一軸， 並延伸至緩衝升降機部300之中間，亦即延伸至裝載了移 動爐240之垂直移動輸送板315最大限度提高的高度而形 成。連接於該蝸桿減速器313之另一軸的第一滾珠絲槓 314 ’於與等徑錐齒輪312連結之蝸桿減速器313的一軸 旋轉時同時旋轉。在此，因為第一滾珠絲槓314連結於蝸 桿減速器313而形成’所以設置與蝸桿減速器313之數量 相應的數量。該第一滚珠絲槓314與垂直移動輸送板315 ❹ 連結，於旋轉時，垂直移動輸送板315可實質地上下移動。 此外’第一滾珠絲槓314藉由連結於等徑錐齒輪312兩側 之蝸桿減速器313的同時旋轉，垂直移動輸送板315不致 . 傾斜於一側地使垂直移動輸送板315全體同時垂直移動， • ’可在水平地維持情況下垂直移動垂直移動輸送板315。_ 垂直移動輸送板315形成板狀，與第一滾珠絲槓314 連結，並藉由第一滾珠絲槓314之旋轉，而在緩衝升降機 部300内上下移動。藉此’將與上部爐220連結之移動爐 240與下部爐230連結時，垂直移動輸送板315藉由第一 15 200931538 滚珠絲槓314之旋轉，而從緩衝升降機部3〇〇之上部移 至下部。 第一 LM導桿316與第一滾珠絲槓314平行地設於第 一滾珠絲槓314的兩侧，並與垂直移動輸送板315連結。 該第一 LM導桿316於垂直移動輸送板315上下移動時， 擔任導引垂直移動輸送板315均衡地滑動之角色。 位置感測器317分別設於緩衝升降機部框架3内部 ： 之上部及下部，而擔任感測垂直移動輪送板315之上下移 動位置的角色。 〇 回復原位感測器318設於緩衝升降機部框架3〇5之内 部成為垂直移動輸送板315之原點的一定位置，而擔任残 測第一伺服馬達311可捕捉垂直移動輸送板315之原點= 角色。 水平移動部包含：第二伺服馬達321、第二滾珠絲槓 324、水平移動輸送板325及第二LM導桿326而構成。 第二伺服馬達321設於垂直移動輸送板315之上部， 與第一伺服馬達311 —起藉由施加電源（無圖示）而驅動， 擔任控制移動爐240之左右移動的角色。 第一滾珠絲槓324連結於第二伺服馬達321，並获由 第二伺服馬達321之驅動而旋轉。該第二滾珠絲槓324與： 水平移動輸送板325連結，於旋轉時可實質地左右移動水* 平移動輸送板325。 水平移動輸送板325形成板狀’與第二滾珠絲槓324 連結’並藉由第二滾珠絲槓324之旋轉，而在緩衝升降機 16 200931538 部3〇0内左右移動。藉此，水平移動輸送板325移動移動 爐240而最大限度密合於上部爐22〇或下部爐23〇，即使 無外部空氣流入，仍可使玻璃基板從上部爐，輸送至移 • = ’或是使玻璃基板從移動爐24〇輸送至下部爐 ； 帛三LM導桿326與第二滾珠絲槓324平行地設於第 - 三滾珠絲槓324之兩侧，並與水平移動輸送板325連結。 ❹ 該第二LM導桿326於水平移動輸送板325左右移動時， 擔任導引水平移動輸送板325均衡地滑動之角色。 其次，就本發明一種實施例的半導體元件之熱處理系 統的動作作說明。 首先，從機器人（無圖示）將熱處理之玻璃基板裝載 於載入部100之基板輸送板15〇時，載入部1〇〇使裝載於 基板輸送板150之玻璃基板輸送至上部爐22〇的第一個加 熱爐。在此，基板輸送板150為了從機器人接收玻璃基板 ❹ 而立刻輸送至上部爐220之第一個加熱爐，而位於載入部 100之上部。 其次’藉由上部爐220之複數個加熱爐階段性地熱處 理藉由基板輸送板150而輸送至上部爐220第一個加熱爐 ， 之玻璃基板。亦即，使輸送莖上部爐220第一個加熱爐之 玻璃基板依序輸送至上部爐220之各加熱爐，而以各加熱 爐實施熱處理。 其次’將以上部爐220而完成熱處理之玻璃基板通過 分別設於彼此相對之上部爐220的最後加熱爐與移動爐 17 200931538 之加熱爐的閘Η㈣之閘252，而輸送至移動爐· 貫施熱處理。在此，移動爐·連結於上部爐220，為了 從上部爐220接收麵基板，_㈣直軸輸送板315 之垂直移動而位於緩衝升降機部3⑽的上部。此外，移動 爐24〇使玻璃基板從上部爐22〇輸送至移動爐時，為 了遮斷外部空氣’係藉由水平移動輸送板325.之水平移 動’而最大限度密合於上部爐22〇之最後加熱爐。另外。 〇 刀別议於上雜220之最後加熱爐與移動爐240之加埶爐 的問門謂之問252的開關，係藉由汽紅255使快門板253 上下移動來進行。此時’快門板253藉由lm導桿π而 均衡地滑動。The shutter plate 253 is disposed on the body portion 251 to switch the gate 252. Since the shutter plate 253 is disposed inside the heating furnace set at a high temperature, it is formed of any one selected from quartz, opaque quartz, oxidized quartz, ceramic glass, and composite material, and even if there is no cooling water, it is not caused by high temperature. It is hot and deformed. The cylinder 2 5 5 is attached to the lower portion of the shutter plate 2 5 3 and functions to move the shutter plate 2 5 3 up and down. That is, the cylinder 255 moves the shutter plate 253 up and down, so that the shutter plate 253 can open and close the shutter 252. The LM guide 257 is provided on both sides of the shutter plate 253 in a form to be coupled to the shutter plate 253. When the shutter plate 253 is moved up and down, the LM guide 257 functions to guide the shutter plate 253 to slide evenly. S 259 is provided in the body portion 251 in the form of a roll, and the copper material = 259 provides a path for circulating the cooling water, and serves as a function to prevent the body 251 from being deformed by the high temperature. The buffer lifter unit 300 which is connected to the lower furnace 2 by the moving furnace 240 is reduced by 3 〇 from the moving furnace 240 to move the moving furnace 240. 4, a diagram showing the details of the buffer elevator section shown in the first diagram, 200931538, and the fourth diagram, which is cut along the line B to B in the first diagram. side view. As shown in the fourth and fourth figures, the buffer elevator unit 3 includes a vertical movement unit that moves the moving furnace 240 in the vertical direction in the cushioning elevator frame 305. The moving furnace 240 is configured to move in a horizontal moving portion in the horizontal direction. The vertical moving portion includes: a first servo motor 311, a miter gear 312, a worm reducer 313, a first ball screw 3i4, and a vertical Move the transport plate (for example) 315, the first 1^ guide rod (1^(1^1168114(^〇11)8111(16)316, position sensor 317 and return to the in-situ sensor ( The first servo motor 311 is provided in a lower portion of the interior of the buffer elevator frame 305, and is driven by applying a power source (not shown). The first servo motor 311 serves as a vertical movement conveyance control described later. The role of the up and down movement of the plate 315. The bevel gear 312 is coupled to the first servo motor 311, and is rotated by the driving of the first servo motor 311. The bevel gears 312 are connected to the bevel gear 312. The role of the rotation of the worm reducer 313 is synchronized. Here, the bevel gear 312 is provided in consideration of two moving furnaces 240 fixed to the vertical movement and the weight of the plate 315, but the equal-diameter cone* gear 312 is not limited. The number of worm reducers 313 are respectively set on the bevel gear 31 The two sides of the two sides are connected to the equal-diameter bevel gear 312. Specifically, the mast reducer 313 is composed of a gear that conveys a rotational motion between the two shafts that are in vertical contact, and constitutes one of the '埚200931538 rod reducer 313'. The main shaft bevel gear 312 is coupled to the equal-diameter bevel gear 312. One of the shafts of the mast destroyer 313 is rotated by a bevel gear 312 that is rotated by the first servo motor 311. The worm reducer 313 controls the rotation of one shaft. The number of movements serves as a role of preventing the vertical movement conveying plate 315 from falling freely. Further, the worm speed reducer 313 synchronizes the rotation by the equal-diameter bevel gear 312. Here, since the worm speed reducer 313 is provided in two The two sides of the bevel gear 312 are provided on the two sides of the bevel gear 312. The first ball screw 3Ϊ4 is coupled to the other shaft of the worm reducer 313 and extends to the middle of the buffer elevator unit 300, that is, to the moving furnace. A vertical moving conveyor plate 315 of 240 is formed to maximize the height. The first ball screw 314' coupled to the other shaft of the worm reducer 313 is rotated about one axis of the worm reducer 313 coupled to the equal-diameter bevel gear 312. At the same time, since the first ball screw 314 is coupled to the worm reducer 313 to form 'therefore, the number corresponding to the number of the worm reducer 313 is set. The first ball screw 314 is connected to the vertical moving conveying plate 315 ❹ When rotating, the vertically moving conveying plate 315 can move substantially up and down. Further, the 'first ball screw 314 is rotated by the simultaneous rotation of the worm reducer 313 coupled to both sides of the bevel gear 312, and the vertical conveying plate 315 is not caused. The one side of the vertical moving conveying plate 315 is vertically moved while being inclined to one side, • 'The vertically movable conveying plate 315 can be vertically moved while being horizontally maintained. The vertical moving conveying plate 315 is formed in a plate shape, coupled to the first ball screw 314, and moved up and down in the buffer elevator portion 300 by the rotation of the first ball screw 314. Thus, when the moving furnace 240 coupled to the upper furnace 220 is coupled to the lower furnace 230, the vertically moving conveying plate 315 is moved from the upper portion of the buffer elevator portion 3 to the upper portion of the buffer lift portion 3 by the rotation of the first 15 200931538 ball screw 314. Lower part. The first LM guide 316 is disposed on both sides of the first ball screw 314 in parallel with the first ball screw 314, and is coupled to the vertical moving conveying plate 315. When the first LM guide 316 moves up and down in the vertical movement transporting plate 315, it serves as a guide for the vertical movement of the transporting plate 315 to slide evenly. The position sensors 317 are respectively disposed inside the buffer elevator frame 3: upper and lower portions, and serve to sense the upper and lower moving positions of the vertical moving carriage plate 315. The return home position sensor 318 is disposed at a certain position of the interior of the buffer elevator frame 3〇5 to be the origin of the vertical moving transport plate 315, and the residual first servo motor 311 can capture the original of the vertical moving transport plate 315. Point = role. The horizontal moving unit includes a second servo motor 321, a second ball screw 324, a horizontal moving conveying plate 325, and a second LM guide 326. The second servo motor 321 is provided on the upper portion of the vertical movement conveying plate 315, and is driven by a power supply (not shown) together with the first servo motor 311, and functions to control the left and right movement of the moving furnace 240. The first ball screw 324 is coupled to the second servo motor 321 and is rotated by the second servo motor 321. The second ball screw 324 is coupled to the horizontal moving conveying plate 325 to substantially move the water horizontally moving conveying plate 325 to the left and right when rotating. The horizontally moving conveying plate 325 is formed in a plate shape 'connected with the second ball screw 324' and is moved left and right in the buffer elevator 16 200931538 portion 3〇0 by the rotation of the second ball screw 324. Thereby, the horizontal moving conveying plate 325 moves the moving furnace 240 to the maximum extent of the upper furnace 22 下部 or the lower furnace 23 〇, and the glass substrate can be transported from the upper furnace to the shifting == ' or even if no external air flows in. The glass substrate is transported from the moving furnace 24 to the lower furnace; the third LM guide 326 is disposed on both sides of the third-ball screw 324 in parallel with the second ball screw 324, and is coupled to the horizontal moving conveying plate 325. . ❹ When the second LM guide 326 moves to the left or right of the horizontal moving conveying plate 325, it serves as a guide for the horizontal moving conveying plate 325 to slide uniformly. Next, the operation of the heat treatment system of the semiconductor element of one embodiment of the present invention will be described. First, when the heat-treated glass substrate is mounted on the substrate transporting plate 15 of the loading unit 100 by the robot (not shown), the loading unit 1 transports the glass substrate loaded on the substrate transporting plate 150 to the upper furnace 22〇. The first heating furnace. Here, the substrate transfer plate 150 is immediately conveyed to the first heating furnace of the upper furnace 220 in order to receive the glass substrate 从 from the robot, and is located above the loading unit 100. Next, the glass substrate is transported to the first furnace of the upper furnace 220 by the substrate transporting plate 150 by a plurality of heating furnaces of the upper furnace 220. Namely, the glass substrates of the first heating furnace of the upper stalk furnace 220 are sequentially conveyed to the respective heating furnaces of the upper furnace 220, and heat treatment is performed in each of the heating furnaces. Next, the glass substrate which has been heat-treated by the upper furnace 220 is transported to the moving furnace through the last heating furnace which is disposed opposite to the upper furnace 220 and the gate 252 of the heating furnace of the moving furnace 17 200931538. Heat treatment. Here, the moving furnace is connected to the upper furnace 220, and the upper surface of the buffer elevator unit 3 (10) is located in order to receive the surface substrate from the upper furnace 220 and the vertical movement of the _(4) straight-axis conveying plate 315. Further, when the moving furnace 24 is used to transport the glass substrate from the upper furnace 22 to the moving furnace, in order to block the external air 'by horizontal movement of the horizontally moving conveying plate 325.', it is most closely adhered to the upper furnace 22 Finally heat the furnace. Also. The knives are not discussed in the final furnace of the upper 220 and the furnace of the moving furnace 240. The switch 252 is operated by moving the shutter plate 253 up and down by the steam red 255. At this time, the shutter plate 253 slides in a balanced manner by the lm guide π.

C 其次’以移動爐240熱處理玻璃基板完成時，緩衝升 降機部為了使柄基缺移域_輪送至下部爐 230，而使固定了移動爐_之垂直移動輪送板化移動 至緩衝升降㈣則之下部，使移滅_連結於下部爐 230。垂直移動輸送板315之移動係藉由第—飼服馬達3ΐι 之驅動而等徑錐齒輪312旋轉，藉由等徑錐齒輪312之旋 轉而堝桿減速313旋轉，藉由蜗桿減速器313之旋轉而 第-滚珠絲槓314旋轉，與第—滚珠絲槓314連社之垂直 移動輸送板化藉由第- LM導桿316滑動來 玻璃基板在移動爐240與下部爐謂間之輪送，當然係通 過分別設於彼此相對之移動爐的加熱爐與下部爐咖 之第-個加熱爐的閘H 25G之閑252來進行。此外，移動 爐240在使玻璃基板從移動爐24〇輸送至下部爐Μ。時， 200931538 斷外部空氣，係藉由水平移動輪送板325之水平移 取大限度密合於下部爐230之第—個加熱爐。 、 拽私’、'"人，藉由下部爐23G之複數個加熱爐Psb段性地熱處 =送至下部爐230之玻璃基板。亦即，使玻璃基板通過 、 下部爐23G之第—個加熱爐的閘門250之閘252，而 ； 下部爐23G之第—個加熱爐實施熱處理，使玻璃基 〜依序輪送至下部爐230之各加熱爐實施熱處理。在此， © &於下部爐23G第-個加熱爐之閘門25q的閘252之開 關，係藉由汽缸255使快門板253上下移動來進行。此時 快門板2兄藉由LM導桿257而均衡地滑動。 其次，以下部爐230熱處理玻璃基板完成時，玻璃基 板輪送至載入部100之基板輸送板15〇。因而，載入部 使基板輸送板150移動至載入部1〇〇之上部，在載入部之 上邛待機中的機器人可拾取熱處理完成後的玻璃基板。在 Q 此’基板輸送板150之移動係藉由伺服馬達110之驅動而 等技錐齒輪120旋轉，藉由等徑錐齒輪120之旋轉而蝸桿 減速器130旋轉’藉由螞桿減速器130之旋轉而滚珠絲槓 140旋轉，與滾珠絲槓140連結之基板輸送板150藉由LM : 導桿160滑動來進行。 如上述’本發明一種實施例的半導體元件之熱處理系 統’係將複數個加熱爐分成上部爐與下部爐而設置兩層， 並藉由移動爐之移動，以上部爐、移動爐及下部爐依序熱 處理半導體元件。如此，因為兩層設置複數個加熱爐，所 以系統之全長縮短。因此，可減少系統之設置空間，而可 19 200931538 提高對系統之設置空間的活用度。 【圖式簡單說明】 第一圖係本發明一種實施例的半導體元件之熱處理系統-的構成圖。 . 第二a圖係圖示第一圖所示之載入部的詳細構成之前視 圖。第二b圖係沿著第一圖中之A —A線而切斷之 、 載入部的側面圖。 · 第三圖係第一圖所示之閘門的斜視圖。 第四a圖係圖示第一圖所示之緩衝升降機部的詳細構成之® 前視圖。第四b圖係沿著第一圖中之B — B線而 切斷之緩衝升降機部的側面圖。 【主要元件符號說明】 100 載入部 105 載入部框架 110 伺服馬達 120 等徑錐齒輪 130 堝桿減速器 140 滚珠絲槓 150 基板輸送板 160 LM導桿 170 位置感測器 180 回復原位感測器 200 熱處理部 210 熱處理部框架 20 200931538 220 上部爐 230 下部爐 240 移動爐 250 閘門 251 本體部 - 252 閘 ' 253 快門板 Λ 255 Ο 汽缸 257 LM導桿 259 管 300 缓衝升降機部 305 缓衝升降機部框架 311 第一伺服馬達 312 等徑錐齒輪 313 蜗桿減速器 〇 314 第一滚珠絲槓 315 垂直移動輸送板 316 第一 LM導桿 1 317 位置感測器 - 318 回復原位感測器 321 第二伺服馬達 324 第二滚珠絲槓 325 水平移動輸送板 326 第二LM導桿 21C. Next, when the glass substrate is heat-treated by the moving furnace 240, the buffer lifter unit moves the vertical moving wheel to the lower furnace 230 to move the vertical moving wheel to the buffering lifting (four). Then, the lower portion is connected to the lower furnace 230. The movement of the vertical moving conveying plate 315 is driven by the first feeding motor 3ΐ, and the bevel gear 312 is rotated, and the mast is decelerated 313 by the rotation of the bevel gear 312 by the worm reducer 313. Rotating and the first ball screw 314 rotates, and the vertical movement transport slab which is connected with the first ball screw 314 is slid by the first LM guide 316 to transfer the glass substrate between the moving furnace 240 and the lower furnace. Of course, it is carried out by the 252 of the gate H 25G of the heating furnace of the moving furnace opposite to each other and the heating furnace of the lower furnace. Further, the moving furnace 240 transports the glass substrate from the moving furnace 24 to the lower furnace. At the time of 200931538, the external air is broken by the horizontal movement of the horizontally moving transfer plate 325 to the first heating furnace of the lower furnace 230. , 拽 ’ ', '" person, by the plurality of furnaces of the lower furnace 23G Psb segmental geothermal heat = sent to the glass substrate of the lower furnace 230. That is, the glass substrate is passed through the gate 252 of the gate 250 of the first furnace of the lower furnace 23G, and the first furnace of the lower furnace 23G is subjected to heat treatment to sequentially deliver the glass base to the lower furnace 230. Each of the heating furnaces is subjected to heat treatment. Here, the switching of the shutter 252 of the shutter 25q of the first heating furnace of the lower furnace 23G is performed by the cylinder 255 moving the shutter plate 253 up and down. At this time, the shutter plate 2 is slidably balanced by the LM guide 257. Next, when the lower furnace 230 heat-treats the glass substrate, the glass substrate is transferred to the substrate transfer plate 15 of the loading unit 100. Therefore, the loading unit moves the substrate transporting plate 150 to the upper portion of the loading unit 1〇〇, and the robot in standby on the loading unit can pick up the glass substrate after the heat treatment. In the case where the movement of the substrate transporting plate 150 is driven by the servo motor 110, the bevel gear 120 rotates, and the worm reducer 130 rotates by the rotation of the bevel gear 120. When the ball screw 140 rotates and the ball screw 140 rotates, the substrate transfer plate 150 coupled to the ball screw 140 is slid by the LM: guide bar 160. As described above, the heat treatment system for a semiconductor element according to an embodiment of the present invention divides a plurality of heating furnaces into an upper furnace and a lower furnace to provide two layers, and by moving the furnace, the upper furnace, the moving furnace, and the lower furnace are The semiconductor element is heat treated in sequence. Thus, since a plurality of furnaces are provided in two layers, the overall length of the system is shortened. Therefore, the installation space of the system can be reduced, and the availability of the system setting space can be improved by 19 200931538. BRIEF DESCRIPTION OF THE DRAWINGS The first drawing is a configuration diagram of a heat treatment system for a semiconductor element according to an embodiment of the present invention. The second diagram is a front view showing the detailed configuration of the loading section shown in the first figure. The second b-picture is a side view of the loading section cut along the line A - A in the first figure. · The third diagram is an oblique view of the gate shown in the first figure. The fourth diagram is a front view of the detailed configuration of the buffer elevator portion shown in the first figure. The fourth b-picture is a side view of the buffer elevator section cut along the line B-B in the first figure. [Main component symbol description] 100 Loading section 105 Loading section frame 110 Servo motor 120 Equal-diameter bevel gear 130 Mast reducer 140 Ball screw 150 Substrate conveying plate 160 LM guide 170 Position sensor 180 Revert to the sense of position Detector 200 Heat Treatment Section 210 Heat Treatment Section Frame 2009 200931538 220 Upper Furnace 230 Lower Furnace 240 Moving Furnace 250 Gate 251 Body Section - 252 Gate ' 253 Shutter Plate Λ 255 汽缸 Cylinder 257 LM Guide 259 Tube 300 Buffer Lift Section 305 Buffer Lift section frame 311 first servo motor 312 equal bevel gear 313 worm reducer 〇 314 first ball screw 315 vertical transfer conveyor 316 first LM guide 1 317 position sensor - 318 return home position sensor 321 second servo motor 324 second ball screw 325 horizontally moving conveying plate 326 second LM guiding rod 21

Claims (1)

200931538 七、申請專利範圍·· 1. 一種半導體元件之熱處 之基板，其特徵為包含：㈣賴處理形成了半導體元件 :二:其：具備可移動之基板輸送板； 熱處理部’其儀且供 爐、位於前述上部爐:下二f :理部框架之上部的上部 或前述下部爐之移動爐 =、及連結於前述上部爐 〇 前-述上部爐、匈移峰及^載^卩接㈣縣板，而以 緩衝升降機部ti：爐實施減理；及 水平移動輸送板，及=_：備：㈣前述移動爐而可移動之 動的垂直移動輸c水平移動輸送板之下部而可移 動輪送板移動，而使平移動輸送板與前述垂直移 部爐。 則迷移動爐連結於前述上部爐或前述下 2·如申請專利範圍第i 述上部爐、前述下導體凡件之熱處理系統，其中前 加 彳 。卩爐及刖述移動爐分別由至少1個以上 ❹ 3. 如;請專構成’前述加熱爐之内部由石英材質組成。 以·^、水箕4 &义2項之半導體元件之熱處理系統，其中係 往ϋI土反可在前述上部爐、前述下部爐及前述移動爐之間 .前這移2 ’而在彼此相對之前述上部中的最後加熱爐，與 加熱爐的各個侧面，及.在與前述移動爐中之 4. 如=對：前述下部爐中第一個加熱爐的侧面具備問門。 述^包^圍第3項之半導體元件之熱處理线，其中前 本體部’其係成為外觀而形成板狀； 22 200931538 閘，其係在前述本體部中形成溝狀，使前述基板可出入 於前述加熱爐； ' 快門板，其係設於前述本體部，可開關前述閘； 汽缸，其係安裝於前述快門板之下部，而使前述快門板 移動；及 ； LM導桿，其係以與前述快門板連結之形態設於前述快 * 門板之兩側，於前述快門板移動時導引前述快門板均衡地滑 © 動。 5. 如申請專利範圍第4項之半導體元件之熱處理系統，其中前 述快門板係由從石英、不透明石英、氧化鋁、陶瓷玻璃及碳 複合材料選出之任何1種而形成。 6. 如申請專利範圍第4項之半導體元件之熱處理系統，其中前 述本體部係由鋁材質而形成。 7. 如申請專利範圍第6項之半導體元件之熱處理系統，其中前 述閘門進一步包含以捲起之形態設於前述本體部，而由銅材 © 質組成之管。 8. 如申請專利範圍第1項之半導體元件之熱處理系統，其中前 述載入部包含： : 成為外觀之載入部框架； • •伺服馬達，其係設於前述載入部框架之内部的下部，並 藉由施加電源而驅動； 等徑錐齒輪，其係與前述伺服馬達連結，並藉由前述伺 服馬達之驅動而旋轉； 蝸桿減速器，其係具有垂直地接觸之二軸，分別設於前 23 200931538 述等徑錐齒輪的兩側，一軸與前述等徑錐齒輪連結，並藉由 前述等徑錐齒輪之旋轉而旋轉； 滾珠絲槓，其係連結於前述堝桿減速器之另一袖，延伸 於前述載入部之上部，而與前述基板輸送板連結，藉由前述 蝸桿減速器之旋轉而旋轉，使前述基板輸送板上下移動；及 LM導桿，其係與前述滾珠絲槓平行地設於前述滾珠絲 . 槓之兩側，與前述基板輸送板連結，於前述基板輸送板移動 二 時導引前述基板輸送板均衡地滑動。 9.如申請專利範圍第8項之半導體元件之熱處理系統，其中前 述載入部進一步包含： 位置感測器，其係分別設於前述载入部框架之内部的上 4及下部，感測如述基板輸送板之上下移動位置；及 回復原位感測器，其係設於在前述载入部框架之内部成 為前述基板輸送板之原點的位置，感洌前述伺服馬達可捕捉 前述基板輸送板之原點。 10.如申請專利範圍第丨項之半導體元件之減㈣統，其中〇 前述緩衝升降機部包含： 垂直移動。P，其係在成為外觀之緩衝升降機部框架 内使刖述移動爐移動於垂直方向；及水平移動部，其係 使前述移動爐移動於水平方向。 11.如申請專利範圍笫1Λ _丄 a 乐10項之丰導體疋件之熱處理系統，$ 月1j述垂直移動部包I . 5馬達，其係設於前述緩衝升降機部框架户 之下，並藉由施加電源而驅動； 24 200931538 等徑錐齒輪，其係與前述第一伺服馬達連結，並藉由 前述第一伺服馬達之驅動而旋轉； - 媧桿減速器’其係具有垂直地接觸之二軸’分別設於 前述等徑錐齒輪的兩側，一軸與前述等徑錐齒輪連結，並 藉由前述等徑錐齒輪之旋轉而旋轉； : 第一滚珠絲横，其係連結於前述蜗桿減速器之另一 * 軸，延伸於前述緩衝升降機部之上部，而與前述垂直移動 ❹ 輸送板連結’藉宙前述蝸桿減速器之旋轉而旋轉，使前述 垂直移動輸送板上下移動；及 第一 LM導桿，其係與前述第一滾珠絲槓平行地設於 前述第一滚珠絲槓之兩侧，與前述垂直移動輸送板連結， 於月ύ述垂直移動輸送板移動時導引前述垂直移動輸送板均 衡地滑動。 Ο 12.如申請專利範圍第11項之半導體元件之熱處理系統，其中 前述垂直移動部進一步包含： 位置感測器，其係分別設於前述緩衝升降機部框架之 内部的上部及下部，感測前述垂直移動輸送板之上下移動 位置；及 |復原位感測器，其係設於在前述緩衝升降機部框架 成為…述垂直移動輸送板之原點的位置，感測前述 第-飼服馬達可捕捉前述垂直移動輸送板之原點。 j it利軌圍第1〇項之半導體元件之熱處理系統，其中 則遂水平移動部包含： 第-飼服馬達，其係設於前述水平移動輪送板與前述 25 200931538 垂直移動輸送板之間，並藉由施加電源而驅動； 第二滚珠絲槓，其係與前述第二伺服馬達連結，藉由 前述第二伺服馬達之驅動而旋轉，使前述水平移動輸送板· 左右移動；及 第二LM導桿，其係與前述第二滾珠絲槓平行地設於 前述第二滾珠絲槓的兩側，並與前述水平移動輸送板連 結，於前述水平移動輸送板移動時，導引前述水平移動輸 送板均衡地滑動。 一200931538 VII. Patent Application Scope 1. A substrate for the heat of a semiconductor device, characterized in that: (4) a semiconductor device is formed by a process: a second: it has a movable substrate transfer plate; and a heat treatment portion Furnace, located in the upper furnace: lower two f: the upper part of the upper part of the frame or the moving furnace of the lower furnace =, and connected to the upper furnace front - the upper furnace, the Hungarian peak and the ^ (4) The county plate, and the buffer lift unit ti: furnace implementation reduction; and horizontal moving conveyor plate, and =_: preparation: (4) the moving furnace and the movable vertical movement of the c-level moving conveyor plate under the movable The moving wheel transfer plate is moved to make the flat moving conveying plate and the aforementioned vertical shifting furnace. Then, the moving furnace is coupled to the foregoing upper furnace or the aforementioned heat treatment system of the upper furnace and the lower conductor of the above-mentioned patent scope, wherein the front heat is added. The furnace and the moving furnace are each made of at least one or more ❹ 3. For example, please make up. The inside of the furnace is made of quartz. The heat treatment system of the semiconductor element of the ^, 箕, 箕 & & , , , , , 土 土 土 土 土 土 土 土 土 土 土 土 土 土 土 土 土 土 土 土 土 土 土 土 土 土 土 土 土 土 土 土 土 热处理 热处理The last heating furnace in the upper portion, and the respective side surfaces of the heating furnace, and 4. in the moving furnace, such as = pair: the side surface of the first heating furnace in the lower furnace is provided with a door. The heat treatment line of the semiconductor element of the third item, wherein the front body portion is formed into a plate shape by an appearance; 22 200931538, the gate is formed in a groove shape in the body portion, so that the substrate can be accessed The heating furnace; a shutter plate that is disposed on the body portion to switch the brake; a cylinder that is mounted on the lower portion of the shutter plate to move the shutter plate; and; the LM guide is coupled to The shutter plate is coupled to the two sides of the fast door panel, and guides the shutter plate to slide evenly when the shutter plate moves. 5. The heat treatment system for a semiconductor element according to the fourth aspect of the invention, wherein the shutter plate is formed of any one selected from the group consisting of quartz, opaque quartz, alumina, ceramic glass, and carbon composite material. 6. The heat treatment system for a semiconductor device according to item 4 of the patent application, wherein the body portion is formed of an aluminum material. 7. The heat treatment system for a semiconductor device according to claim 6, wherein the gate further comprises a tube which is provided in the body portion in a rolled shape and is composed of a copper material. 8. The heat treatment system for a semiconductor device according to claim 1, wherein the loading portion comprises: a loading frame that becomes an appearance; • a servo motor that is disposed at a lower portion of the inside of the loading frame And driven by applying a power source; the bevel gear is coupled to the servo motor and rotated by the servo motor; and the worm reducer has two axes that are vertically contacted, respectively The first 23 200931538 describes two sides of the equal-diameter bevel gear, one shaft is coupled to the equal-diameter bevel gear, and is rotated by the rotation of the equal-diameter bevel gear; the ball screw is coupled to the other of the aforementioned mast reducer a sleeve extending from the upper portion of the loading portion and coupled to the substrate transporting plate, rotating by the rotation of the worm reducer to move the substrate transporting plate down; and an LM guide rod and the ball screw Parallelly disposed on the two sides of the ball and the bar, coupled to the substrate transporting plate, and guiding the substrate transporting plate to slide evenly when the substrate transporting plate moves . 9. The heat treatment system for a semiconductor device according to claim 8, wherein the loading portion further comprises: position sensors respectively disposed on the upper portion 4 and the lower portion of the inside of the loading portion frame, such as The upper and lower moving positions of the substrate conveying plate; and the returning in-situ sensor, which is disposed at a position inside the loading frame to be the origin of the substrate conveying plate, and the servo motor can sense the substrate transportation The origin of the board. 10. The method of claim 4, wherein the buffer booster portion comprises: a vertical movement. P, which moves the moving furnace in the vertical direction in the frame of the cushioning elevator that is the appearance, and a horizontal moving unit that moves the moving furnace in the horizontal direction. 11. For the heat treatment system of the patent element 笫1Λ _丄a 乐10 item, the vertical movement part packs the 1.5 motor, which is set under the aforementioned buffer lift part frame household, and Driven by applying a power source; 24 200931538 an equal-diameter bevel gear coupled to the first servo motor and rotated by the driving of the first servo motor; - a mast reducer 'which has vertical contact The two shafts are respectively disposed on two sides of the equal-diameter bevel gear, one shaft is coupled to the equal-diameter bevel gear, and is rotated by the rotation of the equal-diameter bevel gear; the first ball is transversely connected to the worm The other shaft of the rod reducer extends over the upper portion of the buffer elevator portion, and is coupled to the vertical movement conveyor plate to rotate by the rotation of the worm reducer, so that the vertical movement conveyance plate moves up and down; a LM guide rod is disposed on the two sides of the first ball screw in parallel with the first ball screw, and is coupled to the vertical moving conveying plate, and the vertical moving conveying plate is described in the month. Vertical movement guide plate are slidably conveyed to the balance when moving. The heat treatment system of the semiconductor device of claim 11, wherein the vertical moving portion further comprises: a position sensor respectively disposed at an upper portion and a lower portion of the interior of the buffer elevator portion frame to sense the foregoing Vertically moving the upper and lower moving position of the conveying plate; and | restoring the position sensor, which is disposed at a position where the buffering elevator frame is the origin of the vertical moving conveying plate, and sensing the first feeding motor can capture The origin of the aforementioned vertically moving conveying plate. The heat treatment system of the semiconductor component of the first aspect of the invention, wherein the horizontal moving portion comprises: a first feeding motor, which is disposed between the horizontal moving conveying plate and the 25 200931538 vertical moving conveying plate And driving by applying a power source; the second ball screw is coupled to the second servo motor, and is rotated by the driving of the second servo motor to move the horizontal moving conveying plate to the left and right; and the second a LM guide rod is disposed on both sides of the second ball screw in parallel with the second ball screw, and is coupled to the horizontal moving conveying plate to guide the horizontal movement when the horizontal moving conveying plate moves The conveyor plate slides evenly. One
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KR101254931B1 (en) * 2010-09-29 2013-04-16 에스엔유 프리시젼 주식회사 Transportation Apparatus
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CN109132474A (en) * 2017-06-28 2019-01-04 江苏凯尔生物识别科技有限公司 Horizontal vertical integral type is plugged into transmission system
CN112853474B (en) * 2021-02-26 2024-08-16 连智(大连)智能科技有限公司 Automatic dismantling equipment for thermal field of Czochralski single crystal silicon furnace

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