TW200929331A - Exposure apparatus - Google Patents
Exposure apparatus Download PDFInfo
- Publication number
- TW200929331A TW200929331A TW097135355A TW97135355A TW200929331A TW 200929331 A TW200929331 A TW 200929331A TW 097135355 A TW097135355 A TW 097135355A TW 97135355 A TW97135355 A TW 97135355A TW 200929331 A TW200929331 A TW 200929331A
- Authority
- TW
- Taiwan
- Prior art keywords
- liquid
- exposure apparatus
- wafer
- suction
- area
- Prior art date
Links
- 239000007788 liquid Substances 0.000 claims abstract description 173
- 230000003287 optical effect Effects 0.000 claims abstract description 96
- 238000011084 recovery Methods 0.000 claims abstract description 23
- 239000007789 gas Substances 0.000 claims description 32
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000002347 injection Methods 0.000 description 28
- 239000007924 injection Substances 0.000 description 28
- 238000000034 method Methods 0.000 description 27
- 238000007654 immersion Methods 0.000 description 10
- 238000009736 wetting Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 8
- 230000008595 infiltration Effects 0.000 description 7
- 238000001764 infiltration Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 3
- 230000004075 alteration Effects 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000001143 conditioned effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011707 mineral Substances 0.000 description 2
- 239000012778 molding material Substances 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 239000003504 photosensitizing agent Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 206010036790 Productive cough Diseases 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- -1 fluororesin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 210000003802 sputum Anatomy 0.000 description 1
- 208000024794 sputum Diseases 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000004753 textile Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/52—Details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007241740A JP2009076520A (ja) | 2007-09-19 | 2007-09-19 | 露光装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200929331A true TW200929331A (en) | 2009-07-01 |
Family
ID=40454077
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097135355A TW200929331A (en) | 2007-09-19 | 2008-09-15 | Exposure apparatus |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20090073399A1 (enExample) |
| JP (1) | JP2009076520A (enExample) |
| KR (2) | KR20090030223A (enExample) |
| TW (1) | TW200929331A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107561867A (zh) * | 2016-06-30 | 2018-01-09 | 上海微电子装备（集团）股份有限公司 | 一种浸没式光刻机和一种浸液流场中气泡去除方法 |
| CN113189849A (zh) * | 2021-04-22 | 2021-07-30 | 中国科学院光电技术研究所 | 一种近场光刻浸没系统及其浸没单元和接口模组 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110658686B (zh) * | 2018-06-29 | 2021-07-02 | 上海微电子装备（集团）股份有限公司 | 清除装置、光刻设备和光刻方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3862678B2 (ja) * | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| CN101487981A (zh) * | 2004-10-13 | 2009-07-22 | 株式会社尼康 | 曝光装置、曝光方法及组件制造方法 |
| US7755740B2 (en) * | 2007-02-07 | 2010-07-13 | Canon Kabushiki Kaisha | Exposure apparatus |
| US8237911B2 (en) * | 2007-03-15 | 2012-08-07 | Nikon Corporation | Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine |
-
2007
- 2007-09-19 JP JP2007241740A patent/JP2009076520A/ja not_active Abandoned
-
2008
- 2008-09-15 TW TW097135355A patent/TW200929331A/zh unknown
- 2008-09-16 US US12/211,158 patent/US20090073399A1/en not_active Abandoned
- 2008-09-17 KR KR1020080090955A patent/KR20090030223A/ko not_active Abandoned
-
2010
- 2010-12-08 KR KR1020100124763A patent/KR20110003290A/ko not_active Ceased
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107561867A (zh) * | 2016-06-30 | 2018-01-09 | 上海微电子装备（集团）股份有限公司 | 一种浸没式光刻机和一种浸液流场中气泡去除方法 |
| CN113189849A (zh) * | 2021-04-22 | 2021-07-30 | 中国科学院光电技术研究所 | 一种近场光刻浸没系统及其浸没单元和接口模组 |
| CN113189849B (zh) * | 2021-04-22 | 2023-08-11 | 中国科学院光电技术研究所 | 一种近场光刻浸没系统及其浸没单元和接口模组 |
| US12078937B1 (en) | 2021-04-22 | 2024-09-03 | The Institute Of Optics And Electronics, The Chinese Academy Of Sciences | Near-field lithography immersion system, immersion unit and interface module thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20110003290A (ko) | 2011-01-11 |
| KR20090030223A (ko) | 2009-03-24 |
| JP2009076520A (ja) | 2009-04-09 |
| US20090073399A1 (en) | 2009-03-19 |
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