TW200917502A - A method for producing a metal backside contact of a semiconductor component, in particular, a solar cell - Google Patents
A method for producing a metal backside contact of a semiconductor component, in particular, a solar cell Download PDFInfo
- Publication number
- TW200917502A TW200917502A TW97132991A TW97132991A TW200917502A TW 200917502 A TW200917502 A TW 200917502A TW 97132991 A TW97132991 A TW 97132991A TW 97132991 A TW97132991 A TW 97132991A TW 200917502 A TW200917502 A TW 200917502A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- deposition
- substrate
- deposited
- vacuum
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000004065 semiconductor Substances 0.000 title claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 title claims description 64
- 239000002184 metal Substances 0.000 title claims description 64
- 239000000758 substrate Substances 0.000 claims abstract description 74
- 238000000034 method Methods 0.000 claims abstract description 50
- 238000009489 vacuum treatment Methods 0.000 claims abstract 3
- 238000000151 deposition Methods 0.000 claims description 75
- 230000008021 deposition Effects 0.000 claims description 67
- 238000012545 processing Methods 0.000 claims description 50
- 238000004544 sputter deposition Methods 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 17
- 238000012546 transfer Methods 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 13
- 238000002161 passivation Methods 0.000 claims description 13
- 238000001771 vacuum deposition Methods 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 11
- 230000004888 barrier function Effects 0.000 claims description 11
- 238000007740 vapor deposition Methods 0.000 claims description 11
- 229910052709 silver Inorganic materials 0.000 claims description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 239000006200 vaporizer Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- 238000005477 sputtering target Methods 0.000 claims 2
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- 239000000919 ceramic Substances 0.000 claims 1
- 229910052747 lanthanoid Inorganic materials 0.000 claims 1
- 150000002602 lanthanoids Chemical class 0.000 claims 1
- 239000000155 melt Substances 0.000 claims 1
- 229910001120 nichrome Inorganic materials 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 13
- 238000012216 screening Methods 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000010924 continuous production Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 112
- 235000012431 wafers Nutrition 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 6
- 229910052715 tantalum Inorganic materials 0.000 description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 6
- 238000005137 deposition process Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 239000011651 chromium Substances 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 240000000560 Citrus x paradisi Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910001257 Nb alloy Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000010779 crude oil Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000005571 horizontal transmission Effects 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- FEBJSGQWYJIENF-UHFFFAOYSA-N nickel niobium Chemical compound [Ni].[Nb] FEBJSGQWYJIENF-UHFFFAOYSA-N 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US96894907P | 2007-08-30 | 2007-08-30 | |
| EP07017000A EP2031659A1 (de) | 2007-08-30 | 2007-08-30 | Verfahren zur Erzeugung eines metallischen Rückkontaktes eines Halbleiterbauelements, insbesondere einer Solarzelle |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200917502A true TW200917502A (en) | 2009-04-16 |
Family
ID=40042667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW97132991A TW200917502A (en) | 2007-08-30 | 2008-08-28 | A method for producing a metal backside contact of a semiconductor component, in particular, a solar cell |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR20100046163A (ko) |
| CN (1) | CN101689569B (ko) |
| TW (1) | TW200917502A (ko) |
| WO (1) | WO2009030374A1 (ko) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102388467B (zh) * | 2009-03-18 | 2015-05-13 | 欧瑞康先进科技股份公司 | 串联式制造太阳能电池板的方法 |
| CN102881763A (zh) * | 2011-07-11 | 2013-01-16 | 刘莹 | 一种激光烧结制晶体硅太阳能电池背电极的设备 |
| DE102013219560A1 (de) * | 2013-09-27 | 2015-04-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Photovoltaische Solarzelle und Verfahren zum Herstellen einer metallischen Kontaktierung einer photovoltaischen Solarzelle |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0376165A (ja) * | 1989-08-18 | 1991-04-02 | Asahi Glass Co Ltd | 連続式太陽電池製造装置 |
| KR100366351B1 (ko) * | 2001-01-02 | 2002-12-31 | 삼성에스디아이 주식회사 | 태양전지의 후면전극부 형성방법 |
| US6943423B2 (en) * | 2003-10-01 | 2005-09-13 | Optopac, Inc. | Electronic package of photo-image sensors in cellular phone camera modules, and the fabrication and assembly thereof |
| DE10352143B4 (de) * | 2003-11-04 | 2009-06-25 | Von Ardenne Anlagentechnik Gmbh | Längserstreckte Vakuumanlage zur ein- oder beidseitigen Beschichtung flacher Substrate |
| US20060130891A1 (en) * | 2004-10-29 | 2006-06-22 | Carlson David E | Back-contact photovoltaic cells |
| CN101087899A (zh) * | 2004-11-10 | 2007-12-12 | 德斯塔尔科技公司 | 光电装置的垂直生产 |
| JP2008520525A (ja) * | 2004-11-15 | 2008-06-19 | 日本板硝子株式会社 | 配列構造を有するコーティングの蒸着方法および設備 |
| EP1698715A1 (de) * | 2005-03-03 | 2006-09-06 | Applied Films GmbH & Co. KG | Anlage zum Beschichten eines Substrats und Einschubelement |
| TWI295816B (en) * | 2005-07-19 | 2008-04-11 | Applied Materials Inc | Hybrid pvd-cvd system |
| US7432184B2 (en) * | 2005-08-26 | 2008-10-07 | Applied Materials, Inc. | Integrated PVD system using designated PVD chambers |
-
2008
- 2008-08-20 CN CN2008800237787A patent/CN101689569B/zh not_active Expired - Fee Related
- 2008-08-20 WO PCT/EP2008/006861 patent/WO2009030374A1/de active Application Filing
- 2008-08-20 KR KR1020107002231A patent/KR20100046163A/ko not_active Application Discontinuation
- 2008-08-28 TW TW97132991A patent/TW200917502A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN101689569A (zh) | 2010-03-31 |
| WO2009030374A1 (de) | 2009-03-12 |
| CN101689569B (zh) | 2012-07-04 |
| KR20100046163A (ko) | 2010-05-06 |
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