200911453 九、發明說明： 【發明所屬之技術領域】 本發明係有關一種研磨半導體晶圓等基板之研磨襄 置，尤其有關-種使用研磨帶來研磨基板的缺口（喊^ 之研磨裝置。 【先前技術】 從提升半導體製造的良率觀點看來，半導體晶圓的周 緣部的表面狀歸理近年來係受賴目。在半導體製造步 驟中，由於多數材料係於晶圓上成膜而層#，因此係於不 作為製品使用的周緣部形成不需要的材料或表面粗链。近 年來，使用手臂僅保持晶圓的周緣部來搬運晶圓之方法係 為-般者。而在此種背景下，殘留於周緣部的不需要的物 質會在經過各種步驟之期間剝離而附著於設借（device)表 面使良率降低。因此，以往係使用研磨裝置來研磨晶圓 的周緣部而去除不需要的銅膜或表面粗糙。 神一般係於基板的周緣部形成斜面（bevel)部與缺口部。 ^胃斜面部係指結板的周緣部施以倒角⑽碰㈣的苟: ::且用以防止基板的缺角和微粒的產生等。所謂缺口部 ，指為了容易特定基板的方向（周方向的位置）而形成於基 板周緣的切σ。以下’㈣使詩基板缺π部的研磨之習 知的研磨裝置。 此種研磨農置係謂研磨帶賦予張力（tension)的狀態 吏/研磨γ的研磨Φ滑接於基板的缺口 _，藉此研磨該 °在研磨中’由於研磨帶會沿著缺σ部的形狀而變 320435 5 200911453 形’因此研磨帶的寬度整體係密著於缺口部。然而，根據 研磨帶的張力大小或研磨帶的彎曲反彈力的大小，研磨帶 僅會接觸缺口部的一部分，因此研磨缺口部整體需要耗費 很多時間。 曰本專利公開公報第2004-241434號已揭示有一種研 磨裝置’係將圓盤狀的輥從研磨帶的背側予以推壓，藉此 研磨基板的缺口部。然而，在該研磨裝置中，由於上述輥 會1^著研磨帶的移動而旋轉，因此會有研磨帶相對於輥橫 移之情形。此外’由於㈣外周長度會依每個輕存在 些微的差異’因此該尺寸誤差會導致研磨帶的張力無法固 疋之問題。 【發明内容】 本發明乃有鑑於上述問題點而研創者，其目的在則 \種此將研磨帶抵接至基板的缺口部整體，且墊（pad)〉 會相對於研磨帶橫向偏移的研磨裝置。 "ί 了達成上述目的’本發明的—態樣的研磨裝置係名 邱1 Γ的研磨面與基板相對移動’藉此研磨基板的缺c 二St置係具備有：基板保持部，係保持基板 、关.、、構_，係將前述研磨帶朝研磨帶的長度方向# 研磨頭’係將前述研磨帶推壓至基板的缺口部; 係具；：兩個導引構件，係導引前述研磨㈣ 有淨路;此以及月墊，係配置於前述研磨帶的背側，且肩 朝其長度方向，述背墊係以—邊維持前述環路形狀一心 又Q仃進之方式由複數個滑輪所保持。 320435 6 200911453 '在本發明較佳態樣的研磨裝置中，前述背墊係由配置 -成同心圓狀的複數個圓筒構件所構成。 纟本發明較佳態樣的研磨裝置中，前述複數個滑輪 的至少-個滑輪為以可移動之方式構成的可動滑輪，並夢 由使該可動滑輪移動來調整前述背墊的張力。 曰 在本發明較佳態樣的研磨裝置中，復具備有往復 機=係使前述研磨頭沿著前述研磨帶的前述行進方向往 後連動。 f 的另:態樣的研磨裝置係使研磨帶的研磨面與 ‘有目αΓ動，藉此研磨基板的缺口部；該研磨裝置係具 •土板保持部’係保持基板；研磨帶傳， :述研磨帶朝研磨帶的長度方向傳送;以及研磨頭，：： 别逑研磨帶推屢至基板的缺口部研 且^ ϋ構件係導5U述研磨帶的行進方向；以及背塾， =置於前述研磨㈣且以直線 前 同之的研磨裝”’前述背_具有不 在本發明較佳態樣的研磨裝置中去 形狀中的”一種橫剖面:數個橫剖面 狀。 办狀係具有沿者缺口部形狀的形 在本發明較佳態樣的研磨裝 形狀中的至少一鮮立， 中則达後數個橫剖面 種杈剖面形狀係具有圓弧狀的形狀。 320435 7 200911453 構較佳態樣的研磨裝置中，復具有往復運動機 ’、心研磨頭沿著前述研磨帶的前述行進方向往復 運動。 纟本♦明較佳錢的研磨裝置中，復具備有：支持構 士、Λ’/糸Ϊ定有前述背墊；支點構造，係將前述支持構件設 此以則述支持構件的—端或該一端附近的點為中心而旋 ’以及推壓構件’係將前述支持構件的 述研磨帶。 崎作k主刖 f 在本發明較佳態樣的研磨裝置中，復具備有：支持構 =固疋有剛m;以及複數個推壓構件，係將前述 支持構件朝前述研磨帶推壓。 在本發明較佳恶樣的研磨裝置中，復機 ，，係將前述支持構件的可動方向限制成朝前述研工二 方向。 k ^本發明較佳態樣的研磨裝置中，係具傷有蓋體，係 覆盍則述支持構件與前述推壓構件。 f發明的另—態樣的研磨裝置係具備有：基板保持 持基板’·第一研磨單元，係將研磨帶壓抵至基板 I 土板的周緣部’·第二研磨單元，係將研磨帶塵抵至 、^反二研磨基板的周緣部；以及外罩，係收容前 处弟-研磨單元與前述第二研磨單元；前述第一研磨單元 系具有上述研磨頭；前述第一研磨單元與前述第二研磨單 兀係構成為能以與前述基板保持部所保持的基板表面平行 之方式移動。 320435 8 200911453 ^在本發明較佳態樣的研磨裝置中，前述第二研磨單元 係具有上述研磨頭。 ^在本發明較佳態樣的研磨裝置中，前述第二研磨單元 係具有研磨頭，該研相係將前述研磨帶㈣至基板的斜 面部以研磨該斜面部。 本發明的另一態樣為一種基板處理裝置，係具備有： 上述研㈣置以及洗淨模組，該洗淨模組係洗淨由上述研 磨裝置所研磨的基板。 依據本發明，由於能藉由背墊使研磨帶的研磨面滑接 至缺口部整體，因此能提升研磨速度。此外，由於藉由兩 個^引構件來導引研磨帶的行進方向，因此能防止背塾相 對於研磨帶橫向偏移。 【實施方式】 以下參照圖式說明本發明的實施形態。 第1圖係顯示本發明第一實施形態的研磨 圖。第，圖係第！圖所示的研磨裝置的剖面圖。千面 如第1圖與第2圖所示’本實施形態的研磨裝置係具 有.晶圓工作台單元（基板保持部）2()，係具 =之晶圓工作台23;工作台移動機構3。，係使： 工：口早元20朝與晶圓工作台23上表面(晶圓保持面)平 仃的方向移動；以及缺口研磨單元4〇，係研磨保持於晶圓 工作台23的晶圓w的缺口部v。 磨 晶圓工作台單元2〇 單元40係收容於外罩 、工作台移動機構30、以及缺口研 11内。該外罩11係藉由隔板14 320435 9 200911453 區劃成上室（研磨室）15盥下官r 丄 广至（機械至）16廷兩個空間。上 述晶圓工作台23愈_勒l q jrn j*； «π _ ~缺口研磨早兀40係配置於上室15内， 而工作台移動機構3〇罢·^ 係配置於下室16内。於上室15的側 壁形成開口部12，該開口邱丄 , X间口。卩12係猎由以未圖示的驅動缸 所驅動的擋門（shutter) 13而封閉。 r 曰曰圓w係通過開σ部12而搬人/搬出至外罩u的内 外。晶圓W的搬運係藉由例如搬運機器人這種習知的晶圓 搬運機構（未圖示）來進行。於晶圓工作台23之上表面形成 :复數條溝26。於晶圓工作台23之下部固定有垂直延伸的 弟中轴（shaft)27A，溝26係經由第一中空軸27Α與管 31而連通於未圖示的真空泵。 第一中空軸27A係藉由軸承28而以可旋轉的方式被 ，持，並經由皮帶輪pl、p2以及皮帶Μ而連結至馬達瓜卜 第中空軸27A係經由旋轉接頭（r〇tary j〇int)32連接至管 31。當驅動真空泵時，於溝26形成真空，藉此將晶圓w (保持於晶圓工作台23之上表面。晶圓霄係在保持於晶圓 工作台23上表面的狀態下，藉由馬達mi而旋轉。亦即， 在本只把开九悲、中，糟由馬達ml、皮帶輪pi、p2、皮帶七1、 以及第一令空軸27A來構成使晶圓工作台23旋轉之工作 台旋轉機構。 上述管31係通過第二中空軸27B的内部而連結至上 述真空泵。該第二中空軸27B係垂直延伸而與第一中空轴 27A平行地配置。保持於晶圓工作台23上表面的晶圓w 的周緣部係位於第二中空轴27B的延長線上。第二甲空轴 320435 10 200911453 27B係藉由圓筒狀的軸台29以可旋轉的方式被支持。軸台 —29係通過形成於隔板14的貫通孔17而延伸。第一中空抽 -27A係經由旋轉手臂36而連結至第二中空轴27b。 軸台29的下端係固定於支持板34。支持板34係固定 於第一可動板33A的下表面。第一可動板33A上表面係經 由第一線性導件（Hnear guide)35A而連結至第二可動板 3 3B之下表面。藉此，第一可動板33A係可相對於第二可 動2 33B相對移動。第二可動板33B之上表面係經由相對 於第一線性導件35A垂直延伸的第二線性導件35B而連結 至隔板14之下表面。藉此，第二可動板33B係可相對於 隔板14相對移動。藉由此種配置，第二中空 中空軸27A、以及晶圓工作台23係可朝與該晶圓工作台 23之上表面平行的方向移動。 於第-可動板33A連結有滚珠螺.桿Μ，該滾珠螺和 係連結至馬達m2。#使馬達m2 _時，第—可動相 33A會沿著第一線性導件 於筮一 冷仟35A的長度方向移動。同樣地， 於弟一可動板33B連蚌右去 ^ m ^ °未圖的滾珠螺桿，於該滾珠螺 杯連結有馬達m3。當佶馬诖始姑+200911453 IX. INSTRUCTIONS OF THE INVENTION: TECHNICAL FIELD The present invention relates to a polishing apparatus for polishing a substrate such as a semiconductor wafer, and more particularly to a grinding device for polishing a substrate using an abrasive belt. Technology] From the viewpoint of improving the yield of semiconductor manufacturing, the surface-like refraction of the peripheral portion of a semiconductor wafer has been relied on in recent years. In the semiconductor manufacturing step, since most materials are formed on a wafer, the layer # Therefore, it is necessary to form an unnecessary material or a surface thick chain at a peripheral portion that is not used as a product. In recent years, a method of using a arm to hold only a peripheral portion of a wafer to carry a wafer is generally the case. The unnecessary substances remaining in the peripheral portion are peeled off during the various steps and adhered to the surface of the device to lower the yield. Therefore, in the past, the peripheral portion of the wafer was polished using a polishing apparatus to remove the unnecessary portion. The copper film or the surface is rough. The god generally forms a bevel portion and a notch portion at the peripheral portion of the substrate. The stomach slanting surface refers to the peripheral portion of the knot plate. Chamfering (10) 碰 (4) ::: :: and to prevent the occurrence of chipping of the substrate and the generation of fine particles, etc. The notch portion refers to a sigma σ formed on the periphery of the substrate in order to facilitate the direction of the specific substrate (the position in the circumferential direction). In the following, (4) a conventional polishing apparatus for polishing a slab portion of a slab. This type of polishing is a state in which a polishing belt is provided with a tension 吏/grinding γ is slid to the notch of the substrate. This grinding is in the grinding process. 'Because the polishing tape will change along the shape of the missing σ portion, the shape of the polishing tape is fixed to the notch portion. However, depending on the tension of the polishing tape or the polishing tape The thickness of the bending repulsive force is such that the polishing tape only contacts a part of the notch portion, so that it takes a lot of time to grind the entire notch portion. A polishing device 'discloses a disk shape is disclosed in Japanese Laid-Open Patent Publication No. 2004-241434 The roller is pressed from the back side of the polishing tape to polish the notch portion of the substrate. However, in the polishing device, since the roller rotates due to the movement of the polishing tape, there is grinding. In contrast to the case where the roller is traversed. In addition, since the length of the outer circumference of the (four) is slightly different depending on each light, the dimensional error may cause the tension of the polishing belt to be unsettled. [Invention] The problem is that the researcher has the purpose of abutting the polishing tape to the entire notch portion of the substrate, and the pad is a polishing device that is laterally offset with respect to the polishing tape. In the polishing apparatus of the present invention, the polishing surface of the system name "Qi 1 Γ is moved relative to the substrate", whereby the substrate of the polishing substrate is provided with a substrate holding portion for holding the substrate, the substrate, and the structure. _, the grinding belt is oriented in the longitudinal direction of the polishing belt # polishing head ' is to press the polishing belt to the notch portion of the substrate; the device; two guiding members, guiding the grinding (4) to have a clean road; The moon pad is disposed on the back side of the polishing tape and has a shoulder facing the longitudinal direction thereof, and the back pad is held by a plurality of pulleys in such a manner that the loop shape is maintained and the Q is advanced. 320435 6 200911453 In a polishing apparatus according to a preferred aspect of the present invention, the back pad is composed of a plurality of cylindrical members arranged in a concentric shape. In a polishing apparatus according to a preferred aspect of the present invention, at least one of the plurality of pulleys is a movable pulley configured to be movable, and the tension of the backing pad is adjusted by moving the movable pulley. In the polishing apparatus according to a preferred aspect of the present invention, the reciprocating machine is further provided such that the polishing head is interlocked in the traveling direction of the polishing belt. The other aspect of the f-grinding device is such that the polishing surface of the polishing tape is swayed with 'a target α, thereby polishing the notch portion of the substrate; the polishing device holder/soil holding portion' holds the substrate; : the polishing belt is conveyed in the longitudinal direction of the polishing belt; and the polishing head, :: the polishing belt is pushed to the notch portion of the substrate, and the member is guided to guide the traveling direction of the polishing belt; In the above-mentioned grinding (four) and in the same manner as in the straight line, the above-mentioned back_ has a cross-sectional shape which is not in the shape of the polishing apparatus which is not preferred in the present invention: a plurality of cross-sectional shapes. The pattern has a shape along the shape of the notch portion. At least one of the grinding shapes of the preferred embodiment of the present invention, wherein the plurality of cross-sections have a circular arc shape. 320435 7 200911453 In a preferred embodiment of the polishing apparatus, a reciprocating machine is provided, and the core polishing head reciprocates along the traveling direction of the polishing belt. In the grinding device of the present invention, the support device has the following structure: the support member, the 背'/糸Ϊ has the aforementioned back pad; the fulcrum structure, the support member is provided to describe the end of the support member or The point near the one end is centered and the 'and pressing member' is the polishing tape of the aforementioned supporting member. In a polishing apparatus according to a preferred aspect of the present invention, the support device has a support structure and a plurality of pressing members, and the support member is pressed toward the polishing belt. In the polishing apparatus of the preferred embodiment of the present invention, the rewinding machine restricts the movable direction of the support member to the direction of the grinding machine. k ^ In the polishing apparatus according to a preferred aspect of the present invention, the cover member is wound with a cover member, and the support member and the pressing member are described. According to another aspect of the invention, there is provided a polishing apparatus comprising: a substrate holding substrate; a first polishing unit, wherein the polishing tape is pressed against a peripheral portion of the substrate I, and a second polishing unit is a polishing tape The dust is applied to the periphery of the substrate, and the outer cover is a front-seat-grinding unit and the second polishing unit; the first polishing unit has the polishing head; the first polishing unit and the first The two polishing unit is configured to be movable in parallel with the surface of the substrate held by the substrate holding portion. 320435 8 200911453 ^ In a polishing apparatus according to a preferred aspect of the present invention, the second polishing unit has the polishing head. In a polishing apparatus according to a preferred aspect of the present invention, the second polishing unit has a polishing head that polishes the bevel portion by the polishing tape (four) to the inclined surface portion of the substrate. According to still another aspect of the invention, there is provided a substrate processing apparatus comprising: the polishing device and the cleaning module, wherein the cleaning module cleans a substrate polished by the polishing device. According to the present invention, since the polishing surface of the polishing tape can be slidably attached to the entire notch portion by the back pad, the polishing speed can be increased. Further, since the traveling direction of the abrasive tape is guided by the two guide members, the backlash can be prevented from being laterally offset with respect to the polishing tape. [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the drawings. Fig. 1 is a view showing a polishing chart according to a first embodiment of the present invention. First, the picture is the first! A cross-sectional view of the polishing apparatus shown in the drawing. As shown in Fig. 1 and Fig. 2, the polishing apparatus of the present embodiment has a wafer table unit (substrate holding unit) 2 (), a wafer table 23 with a fixture =, and a table moving mechanism. 3. , the system: the mouth 20 is moved in a direction parallel to the upper surface (wafer holding surface) of the wafer table 23; and the notch grinding unit 4 is used to polish the wafer held on the wafer table 23 The notch v of w. The wafer table unit 2 is housed in a housing, a table moving mechanism 30, and a notch 11 . The outer cover 11 is divided into two compartments: an upper chamber (grinding chamber) 15 by a partition 14 320435 9 200911453, and a space of 16 degrees. The above-described wafer table 23 is more _ l q q « « « « « « « « 缺口 缺口 缺口 缺口 缺口 缺口 缺口 缺口 缺口 缺口 缺口 缺口 缺口 缺口 缺口 缺口 缺口 缺口 缺口 缺口 缺口 缺口 缺口 缺口 缺口 缺口 缺口 缺口 缺口 缺口 缺口 缺口 缺口 。 。 。 。 An opening portion 12 is formed in the side wall of the upper chamber 15, and the opening is a port and an X port. The 卩12 series is closed by a shutter 13 driven by a drive cylinder (not shown). r The circle w is moved and carried out to the inside and outside of the cover u by opening the σ portion 12. The conveyance of the wafer W is performed by a conventional wafer transfer mechanism (not shown) such as a transfer robot. Formed on the upper surface of the wafer table 23: a plurality of grooves 26. A vertically extending shaft 27A is fixed to a lower portion of the wafer table 23, and the groove 26 communicates with a tube 31 via a first hollow shaft 27 and a vacuum pump (not shown). The first hollow shaft 27A is rotatably held by the bearing 28, and is coupled to the motor gubbard hollow shaft 27A via the rotary joints via the pulleys pl, p2 and the belt loop (r〇tary j〇int) ) 32 is connected to the tube 31. When the vacuum pump is driven, a vacuum is formed in the groove 26, whereby the wafer w is held on the upper surface of the wafer table 23. The wafer is held on the upper surface of the wafer table 23 by the motor. The rotation of the mi. That is, the work table for rotating the wafer table 23 is constituted by the motor ml, the pulley pi, the p2, the belt VII, and the first hollow shaft 27A. The rotating mechanism is connected to the vacuum pump through the inside of the second hollow shaft 27B. The second hollow shaft 27B extends vertically and is disposed in parallel with the first hollow shaft 27A. The upper surface of the wafer table 23 is held on the upper surface of the wafer table 23. The peripheral portion of the wafer w is located on the extension line of the second hollow shaft 27B. The second hollow shaft 320435 10 200911453 27B is rotatably supported by the cylindrical abutment 29. The pedestal - 29 series The first hollow pump -27A is coupled to the second hollow shaft 27b via the rotating arm 36. The lower end of the pillow block 29 is fixed to the support plate 34. The support plate 34 is fixed. On the lower surface of the first movable plate 33A. on the first movable plate 33A The surface is coupled to the lower surface of the second movable plate 3 3B via a first linear guide 35A. Thereby, the first movable plate 33A is relatively movable relative to the second movable 2 33B. The second movable The upper surface of the plate 33B is coupled to the lower surface of the partition 14 via a second linear guide 35B extending perpendicularly with respect to the first linear guide 35A. Thereby, the second movable plate 33B is relative to the partition 14 With this arrangement, the second hollow hollow shaft 27A and the wafer table 23 are movable in a direction parallel to the upper surface of the wafer table 23. The ball is coupled to the first movable plate 33A. The ball screw is coupled to the motor m2. When the motor m2 _, the first movable phase 33A moves along the longitudinal direction of the first linear guide 35A. Similarly, Yu Di, a movable plate 33B, 蚌 right to the ^ m ^ ° ball screw, the motor screw m3 is connected to the ball screw cup.
會沿著第1… 時，第二可動板33E :㈣-線性導件35B的長度方向 移動機構30係由第一可 口此工作。 -可動族彻^ ㈣33Α弟―線性導件35Α、第 一 了動扳33Β、第二線性導件 滾跌碟萨Μ 于什未圖示的滾珠螺桿、 m以及馬達仏…所構成。在第2圖卜係 則頭頦不藉由工作台移動機構30 ’、 晶圓工作台23的移動方向。 々馬達m2所進行的 320435 11 200911453 於支持板34固定有馬達m -輪P3、P4、以及皮帶b3而連結至瓜4係經由皮帶 • m4係以使第二中空車由27B交互祕吉 工軸27B。馬達 人互地朝順時鐘方向盥逆時鐘 方向旋轉達預定角度之方式動作。藉此’從上;觀：？ 圓工作台23上的晶圓W會以筮_ 万硯之日日 τ 乂第―中空軸27Β為中心在水 平面内迴轉（swing)。後述的研磨點係位The first movable plate 33E: (four) - the longitudinal direction moving mechanism 30 of the linear guide 35B is operated by the first one. - Movable family ^ (4) 33 brothers - linear guides 35 Α, the first mover 33 Β, the second linear guide 滚 碟 碟 于 于 于 于 于 于 滚 滚 滚 滚 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 In the second drawing, the head movement is not caused by the movement direction of the table moving mechanism 30' and the wafer table 23. 320435 11 200911453 performed by the motor m2, the motor m-wheels P3, P4, and the belt b3 are fixed to the support plate 34 and connected to the melon 4 via the belt m4 system so that the second hollow car is intersected by the 27B. 27B. The motor moves toward each other in a clockwise direction to reverse the clock direction by a predetermined angle. Take this from the top; view:? The wafer W on the circular table 23 is swung in the horizontal plane centering on the day τ 乂 the first hollow shaft 27 筮. Grinding point system described later
的延長線上。因此’馬達m4、皮帶輪 、丄B b3係構成用以使晶圓％以 P 乂及皮▼ Γ如第2圖所示，缺口 之旋㈣構。 42，係將研磨帶41推壓 研磨頭 ,, 土至日曰® W的缺口部；供給捲筒 ⑽物，係供給研磨帶41至研磨頭42,以及回收捲筒 45b ’係捲繞從研磨頭42拉出的研磨帶μ。供給捲筒… 與回收捲筒45b係收容於咬晉g ^ 在研磨裝置外罩11的捲筒室 i. 研磨頭42係具有研磨帶傳送機構43。該研磨帶傳送 機構43係具備有研磨帶傳送.輥與保_，於研磨帶傳送輥 與保持輕之間夹著研磨帶41，藉此把持研磨帶二:： ^吏研磨帶傳送輥旋轉來傳送研磨ψ 41。研 ^ 由研磨帶傳送機構43而從供給捲筒45a被拉出，並朝向： ，頭42。研磨頭42係使研磨帶41的研磨面接觸至晶圓w 白缺口。卩。接著，與缺口部接觸後，研磨帶41會被捲緯至 :=45b:如第2圖所示，於晶圓W的上方與下方 1 冷卻水# /夜供給喷嘴58 ’而對晶圓W供給研磨液或 320435 12 200911453 研磨裝置復具備有配置在外罩u内的晶圓夹持機構 -80。該晶圓夾持機構8〇係構成為夾取藉由上述晶圓搬運機 •構搬入至外罩11内的晶圓w並予以載置至晶圓工作台 23，以及從晶圓工作台23夾取晶圓w並予以交付至上述 晶圓搬運機構。此外，第！圖僅顯示晶圓夹持機構8〇白卜 部分。 第3圖係顯示晶圓夾持機構的夾持手之平面圖。如第 ，3圖所示，晶圓夾持機構8〇係具有··第—夾持手8卜係具 有複數個壓抵件83;以及第：夾持手82，係具有複數個壓 抵件83。該等第-及第二夾持手8卜82係藉由未圖示的 開閉機構而朝彼此接近及遠離的方向（以箭頭τ所示）移 動。此外’第-及第二夾持手81、82係藉由未圖示的夹持 移動機構朝與晶圓工作台23所保持的晶圓w表面垂直之 方向移動。 晶圓搬運機構的手10 0係將晶圓w搬運至第一及第二 夹持手8卜82之間的位置。接|，當使第一及第二爽持手 81、82朝彼此接近的方向移動時，該等第一及 决 81、82的壓抵件83會接觸晶圓w ' w的周緣部。藉此，晶圓 W會被第-及第二夾持手81、82夹持。此時的構成為晶 圓W的中心與晶圓工作台23的中心（晶圓工作台Μ的旋 ，轴）會-致。因此’第-及第二失持手81、82亦會作為 定中心（centering)機構而發揮作用。 第4圖係顯示第2圖的研磨頭42的放大圖。如第4 圖所示，研磨頭42係具備有：兩個導引輥57a、π，係 320435 13 200911453 導引研磨4 41的行進方肖；以及背*5〇，传 帶41的背側。導引輥57a、57 ，、；研磨 〇你配置於研磨頭42的合 且配置於研磨點（晶圓W與研磨 、、|而， 丁士 —丄 呷厲贡41的接觸點）的上方及 下方。猎由此種配置，研磨帶41 夂 盥曰PI τ A / 、猎由—引輥而被導引至 與日日囫工作台23所保持的晶圓w 丨主 m府二* ^ 衣曲定直的方向。此外’ 研磨面為研磨帶41之與晶圓W相對向側的表面。 59a、H〇係具有環路形狀(環狀），並由複數個滑輪 背整50的：/I观、％所保持。因此，背整5〇係可朝 勺長度方向自由移動。這些滑輪 旋轉之方式安裝於基台61。滑_59dm %係以可 硐輻59d係以可調整位置之方 工、的可動滑輪，藉由使該滑輪59d移動而可調整背塾 5〇的張力。滑輪59a、59b係與導引輥57a、5 置於研磨料上方及下方，並分職近㈣^7a、57b 而配置m種配置’背$ 5G的—部分係以與導引輕 %、57b所導引的研磨帶41的行進方向平行之方式 線狀延伸_。 第5A圖至第5D圖係顯示背墊5〇的剖面例之圖。第 5A圖係顯示背塾5〇由軟性的圓筒構件所構成的單重構造 之例。第5B圖係顯示背墊5〇由配置成同心狀的兩個圓筒 構件50a、50b所構成的雙重壁構造之例。在此例中，内側 的圓筒構件5 0 a係由硬質的材料所形成，而外側的圓筒構件 5〇b係由軟質的材料所構成。藉由此種構成，能一邊藉由 外側的軟性圓筒構件5〇a使研磨帶41沿著缺口部的形狀變 形，—邊藉由内側的硬質圓筒構件5〇a將研磨帶41抵接至 320435 14 200911453 缺口部。第5C圖係顯示雙重壁構造的變形例，為以皮膜 5〇d覆蓋圓筒構件5〇c外周面的構造。於圓筒構件的 内部注入經過加壓的氣體或液體等加壓流體。第5D圖係 顯不三重壁構造之例，為組合第5B圖所示的構成與第冗 圖所不的構成之例。作為構成背墊50的材料之例，可列舉 矽橡膠、矽海綿、以及氟橡膠等彈性材料。 =口研磨單元40係具備有往復運動機構，係使研磨頭 、42㈣導引輕57a ' 57b所導引的研磨f 41的行進方向直 線性^也往復運動。第6圖係用以說明往復運動機構的上面 圖’第圖至第7D圖係第6圖的n線的剖面圖。 如第6圖所示，研磨頭42係固定於可動手臂η的一 端。P而於可動手臂71白令另一端部配置有凸輪轴（㈣ shaft)72。可動手臂71係經由線性導件而由支持手臂 7士3所月支持’藉由線性導件74 ’可動手臂係以相對於支 =手煮73進行直線運動之方式而被導引。於支持手臂73 安裝有用以驅動凸輪軸72的馬達Ml，馬it M1的旋轉轴 係經由皮帶輪pll、pl2與皮帶刚而連結至凸輪軸& 馬達⑷的旋轉軸與凸輪軸72係藉由固定於支持手臂乃 =75A、75B而以可旋轉的方式被支持。凸輪軸72係 二徒轴承75B的_心線偏心的偏心轴72a。於該偏心軸 ^的前端安裝有凸輪76。凸輪76㈣人形成於可動手臂 而部的匸字形的溝77(參照第7A圖）。 種構成中’當旋轉馬達Μί時，係經由皮帶輪 Ρ 'Ρ '以及皮帶b1G來旋轉凸輪軸72。由於偏心轴72a 320435 15 200911453 •係對於軸承75β的中心線進行偏，、、#絲 、軸72a的凸輪76亦會偏心旋轉。二二，’因此安裝於偏心 ·.圖所示，藉由凸輪76在溝7 7 7A圖至第™ 係進行錄往贿動，絲在可動手臂η 42亦會進行直線往復運動。 刚/而的研磨頭 此外，支持手臂73係以能 構整體一體性地相對於晶目 1 2與往復運動機 野％日日圓W表面呈傾钭 f所示的支持軸78所支持。支持轴由弟6圖 疋在缺研磨早凡40的外罩97的軸承75C所古垃士 經由皮帶輪。l3,以及皮帶：結Ϊ 的中心線Μ2的旋轉軸。研磨點係位於支持軸7 8 藉此能以研磨點為中，使支持軸78旋轉， 即使其傾斜）。在本實施形態中，以研磨點為中心 使研磨頭42傾斜之傾斜機播 …貝斜機構係由支持軸78、皮帶輪ρ13、Extension line. Therefore, the motor m4, the pulley, and the 丄B b3 are configured to make the wafer % P 乂 and skin ▼, as shown in Fig. 2, and the notch (four) configuration. 42, the grinding belt 41 is pressed against the grinding head, the soil to the notch portion of the corrugated® W; the supply reel (10) is supplied with the polishing belt 41 to the polishing head 42, and the recovery reel 45b is wound from the grinding The grinding tape μ pulled out by the head 42. The supply reel... and the recovery reel 45b are housed in the reel chamber. The reel unit 42 has a polishing tape transfer mechanism 43. The polishing tape transfer mechanism 43 is provided with a polishing tape transfer roller and a protective tape 41. The polishing tape 41 is sandwiched between the polishing tape transfer roller and the light holding roller, thereby holding the polishing tape 2:: ^吏the polishing tape conveying roller rotates Transfer the grinding crucible 41. The grinding is pulled out from the supply reel 45a by the lapping belt conveying mechanism 43 and directed toward the head 42. The polishing head 42 brings the polishing surface of the polishing tape 41 into contact with the wafer w white notch. Hey. Then, after the contact with the notch portion, the polishing tape 41 is wound up to: = 45b: as shown in Fig. 2, above and below the wafer W, 1 cooling water # / night supply nozzle 58 'and wafer W Supply of slurry or 320435 12 200911453 The polishing apparatus is provided with a wafer clamping mechanism-80 disposed in the housing u. The wafer holding mechanism 8 is configured to sandwich and hold the wafer w loaded into the outer cover 11 by the wafer transfer mechanism, and place it on the wafer stage 23, and clip it from the wafer stage 23 The wafer w is taken and delivered to the wafer transfer mechanism. Also, the first! The figure only shows the wafer holding mechanism 8 〇 white part. Figure 3 is a plan view showing the gripping hand of the wafer holding mechanism. As shown in FIG. 3, the wafer clamping mechanism 8 has a plurality of pressing members 83, and a clamping member 82 having a plurality of pressing members. 83. The first and second gripping hands 8 and 82 are moved toward and away from each other (indicated by an arrow τ) by an opening and closing mechanism (not shown). Further, the first and second gripping hands 81, 82 are moved in a direction perpendicular to the surface of the wafer w held by the wafer table 23 by a nip movement mechanism (not shown). The hand 10 of the wafer transport mechanism transports the wafer w to a position between the first and second gripping hands 8 and 82. When the first and second refreshing hands 81, 82 are moved toward each other, the pressing members 83 of the first and second fingers 81, 82 contact the peripheral portion of the wafer w'w. Thereby, the wafer W is held by the first and second gripping hands 81, 82. At this time, the center of the wafer W and the center of the wafer stage 23 (the rotation of the wafer table, the axis) are caused. Therefore, the 'first and second lost hands 81, 82 will also function as a centering mechanism. Fig. 4 is an enlarged view showing the polishing head 42 of Fig. 2. As shown in Fig. 4, the polishing head 42 is provided with two guide rollers 57a, π, a running direction of the guide grinding 4 41; and a back *5 〇, the back side of the belt 41. The guide rollers 57a, 57, and the polishing head are disposed on the polishing head 42 and disposed above the polishing point (the contact point between the wafer W and the polishing, and the Dingshi - Ligong 41). Below. In this configuration, the grinding belt 41 夂盥曰PI τ A /, the hunting-by-roller is guided to the wafer held by the day-to-day workbench 23 丨 main mfu 2* 衣曲定Straight direction. Further, the polished surface is the surface of the polishing tape 41 opposite to the wafer W. The 59a and H〇 systems have a loop shape (annular shape) and are held by a plurality of pulleys 50: /I, %. Therefore, the backing 5 can move freely in the direction of the length of the spoon. These pulleys are mounted on the base 61 in a rotating manner. Sliding _59 dm % is a movable pulley that can adjust the position of the spokes 59d, and the tension of the back 塾 5 可 can be adjusted by moving the pulley 59d. The pulleys 59a, 59b are placed above and below the abrasive material with the guide rollers 57a, 5, and are assigned close to (4)^7a, 57b, and are arranged in a variety of configurations 'back $5G' to be lightly guided, and 57b The guided direction of travel of the abrasive belt 41 is linearly extended in a parallel manner. 5A to 5D are views showing a cross-sectional view of the back pad 5〇. Fig. 5A shows an example of a single structure in which the back cymbal 5 is composed of a soft cylindrical member. Fig. 5B shows an example of a double wall structure in which the back pad 5 is composed of two cylindrical members 50a and 50b arranged in a concentric shape. In this example, the inner cylindrical member 50a is formed of a hard material, and the outer cylindrical member 5b is made of a soft material. According to this configuration, the polishing tape 41 can be deformed along the shape of the notch portion by the outer flexible cylindrical member 5〇a, and the polishing tape 41 can be abutted by the inner hard cylindrical member 5〇a. To 320435 14 200911453 The gap. Fig. 5C is a view showing a modification of the double wall structure, which is a structure in which the outer peripheral surface of the cylindrical member 5〇c is covered with the film 5〇d. A pressurized fluid such as a pressurized gas or liquid is injected into the cylindrical member. The fifth drawing shows an example of a triple-wall structure, and is an example of a configuration in which the configuration shown in Fig. 5B and the redundant diagram are combined. Examples of the material constituting the back pad 50 include elastic materials such as enamel rubber, enamel sponge, and fluororubber. The port grinding unit 40 is provided with a reciprocating mechanism for linearly reciprocating the traveling direction of the grinding f 41 guided by the polishing head 42 and the guiding light 57a' 57b. Fig. 6 is a cross-sectional view taken along the line n of Fig. 6 to Fig. 6 to Fig. 6 of the reciprocating mechanism. As shown in Fig. 6, the polishing head 42 is fixed to one end of the movable arm η. P is a camshaft ((4) shaft) 72 disposed at the other end of the movable arm 71. The movable arm 71 is guided by the support arm by a linear guide, and is supported by the movable arm by the linear guide 74' to move linearly with respect to the support = hand 73. A motor M1 for driving the cam shaft 72 is mounted on the support arm 73, and the rotary shaft of the horse m1 is coupled to the cam shaft via the pulleys p11 and pl2 and the belt shaft. The rotation shaft of the motor (4) and the cam shaft 72 are fixed by The support arm is =75A, 75B and is supported in a rotatable manner. The cam shaft 72 is an eccentric shaft 72a of the eccentricity of the second bearing 75B. A cam 76 is attached to the front end of the eccentric shaft ^. The cam 76 (four) is formed in a U-shaped groove 77 of the movable arm (see Fig. 7A). In the configuration, when the motor ίί is rotated, the cam shaft 72 is rotated via the pulley Ρ 'Ρ ' and the belt b1G. Since the eccentric shaft 72a 320435 15 200911453 • the center line of the bearing 75β is biased, the #36, the cam 76 of the shaft 72a is also eccentrically rotated. 22. Therefore, it is mounted on the eccentricity. As shown in the figure, the cam 76 is recorded in the groove 7 7 7A to the TM system, and the wire is linearly reciprocated in the movable arm η 42 . In addition, the support arm 73 is supported by the support shaft 78 shown integrally with respect to the crystal 1 2 and the surface of the reciprocator field % yen W. Support shaft from the brother 6 figure 疋 in the lack of grinding the early 40 of the cover 97 of the bearing 75C Guru Shi through the pulley. L3, and the belt: the axis of rotation of the center line Μ2 of the knot. The grinding point is located on the support shaft 7 8 whereby the grinding point can be centered to rotate the support shaft 78 even if it is tilted. In the present embodiment, the tilting machine that tilts the polishing head 42 around the polishing point is supported by the support shaft 78, the pulley ρ13,
Pl4、皮τ b11、以及馬達M2所構成。 供給捲筒45a與回收捲筒价係以使研磨帶w不會鬆 ，之方式’使用未圖示的馬達對研磨帶41職予適當的張 力。研磨帶傳送機構43係以—定的速度將研磨帶Μ從供 =㈣W傳送至回㈣筒45b。研磨帶傳送速度係每分 ，數晕米至數十毫米（例如3Gmm/min至5Gmm/min)。另 =面研” 42朝上下進行往復運動的速度係每分鐘數 百-人之南速。因此’相對於研磨頭42的往復運動的速度， 幾乎能夠忽略研磨帶傳送逮度。 320435 16 200911453 .作為研磨帶41者’能使用於屬於研磨面的單面將例如 *鑽石粒子或氮化矽（Sic)粒子的研磨粒接著於基底薄膜 • (basefilm)的研磨帶41。接著於研磨帶41的研磨粒係根據 晶圓W的種類或所要求的性能來選擇，係可使用例如平均 粒徑為〇.l#m至5,0/zm範圍的鑽石粒子或Sic粒子。此 外，亦可為未接著研磨粒的帶狀研磨布。此外，就基底薄 膜而言，係能使用例如由具有聚酯（p〇lyester)、聚氨酯 (polyurethane)、以及聚對苯二甲酸乙二醋（p〇iyethyiene terephthalate)等可撓性材料所構成的薄膜。 接著，說明上述構成的研磨裝置的動作。晶圓w係藉 由未圖示的晶圓搬運機構，通過開口部12被搬入至夕^ 内。晶圓夾持機構8〇係從晶圓搬運機構的手_(參照 第3圖）夹取晶圓W，並藉由第—及第二夾持手μ、以把 持f圓w。—晶圓搬運機構的手1⑻係將晶圓w授受至第一 及第二夾持手81、82後’移動至外罩11外，接著，擋門 1曰ΊΠ1。已保持晶圓w的晶圓夾持機構8〇係使 曰曰0 w_下降而載置於晶圓工作台23之上表面。接著，驅 動未圖不的真空泵’使晶圓w被吸附於晶圓工作台23之 上表面。 σ 構3二Π乍台23與晶圓W會藉由工作台移動機 構30而私動至研磨頭42的附近。接著，藉由馬達吏 晶圓工作台23轉，而使晶圓w的缺口部與研磨頭π相 =向。接者’開始將研磨液從研磨液供 圓W。在研磨液的供給流量達到預定值的時間點勹= 320435 17 200911453 乍台移動機構3G使晶圓w移動至與研磨帶4ΐ接觸的位 、置。接者，藉由往復運動機構使研磨頭42往復運動。藉此， •使研磨帶41朝研磨帶41的行進方向擺動（OSC勤）’曰而使 Γ?41的研磨面滑接至缺口部。藉此，研磨晶圓W的 =口 I依據需要’亦可藉由傾斜機構使研磨頭Ο以缺口 彻點)為中心傾斜，或藉由旋轉機構使研磨頭Ο以缺 口部為中心旋轉。 .Λ ί 研磨中’研磨帶41的背面與背塾5〇係彼此接觸，背 杜係從研磨帶41的背面側將研磨帶41推壓至 曲此！，研磨帶41與背塾5。係沿著缺口部的形 此研” 41的研磨面會接觸至缺口部整 :因此’能縮短缺口部研磨所需的時間。此外， ^隨著研磨帶傳送機構43所傳送的研”㈣動作， 5〇係猎由與研磨帶41的摩擦而移動，因此研磨帶41 :會承受過度的負载。因此，能防止研磨帶41的切^由 =研磨帶41的行進方向係藉由導㈣57a、5_導引， 1 此防止背塾5〇相對於研磨帶4!橫向偏移。由於藉由調 整滑輪59d的位置能箱4· ι敫&批 ° 因北執_ 背墊5〇的張力，因此能消除 月墊50衣品間的尺寸誤差所導致的張力差異。 在本實施形態中’背墊5〇、滑輪他至^以及基台 可個單元的背塾組合件。該背塾組合件係構成為 墊更換成靳^離°因此’藉由更換背塾裝配即可將舊的背 ^換成新的月墊。此外，亦可將背塾更換成以下所示苴 他貫施形態型式的背墊。 一 320435 18 200911453 接著，參照帛8圖說明本發明的第二實施形態。第8 :圖係顯示本發明第二實施形態的研磨裝置的研磨頭之放大 ，圖。第9A圖係顯示第8 _ A— A線的剖面圖、^線的 圖、以及E_ E線的剖面圖。第9b圖係顯示第8圖的 未#、明面圖以及D—D線的剖面圖。由於本實施形態 未况月的構成與動作係舆上第一 略重複的說明。第一態相同因此省 如第8圖所示，本實施形態的研磨頭65係且有直線狀 延伸的棒狀背塾6。以及貫穿該背·6〇的== =。=63的兩端部係分別由上部固持具 固持具67與下部固持具⑼⑽ 早由〇/a、Mb為中心而可旌 此 2Ι ±θ _ 轉月塾6〇係配置成盘μ由導 引㈣、57b所導引的,:广 ::成背一— 方向二圖:广背塾，有根據上下 向垂直的剖面研磨…行進方 兩端部中，推壓面（將研 歷 .的中央部與 -方面，在端部：中Π，著缺口部形狀的形狀。另 ” T兴#之中間部中 :橫剖面形狀。亦即，背 平緩 係具有比中央部與兩端部 中央㈣兩端部 依據此種構成，者、刀“太的推壓面。 毒成田藉由在復運動機構使研相Μ往復 320435 19 200911453 運動時，用以推壓晶® w❾背塾6〇白勺橫剖面形狀會在第 ‘ .9A圖所不的形狀與第9B圖所示的形狀間連續地變化。因 -此二背墊60係能將研磨帶41抵接至缺口部整體。此外， 在猎由上述傾斜機構使研磨頭65傾斜的情形中，亦能使背 墊60的横剖面形狀追隨外觀變北的缺口部的形狀。並且， ^於研磨中背墊6 0會追隨缺口部的形狀而變形，因此能確 實地將研磨帶41的研磨面推壓至缺口部整體。在此實施形 態中’背墊60的橫剖面形狀雖根據背墊6〇縱方向的位置 而連續變化，但亦可構成為間歇性地變化。 第10圖係顯示本發明第二實施形態的研磨裝置的研Pl4, skin τ b11, and motor M2. The supply reel 45a and the recovery reel are priced so that the polishing tape w does not become loose, and the polishing belt 41 is appropriately tensioned by a motor (not shown). The polishing tape transfer mechanism 43 conveys the polishing tape cassette from the supply of (four) W to the back (four) cylinder 45b at a constant speed. The belt transfer speed is from one minute to several tens of millimeters (for example, 3 Gmm/min to 5 Gmm/min). The speed of the reciprocating motion of the upper and lower sides is several hundred per person per minute. Therefore, the speed of the reciprocating motion of the polishing head 42 can almost neglect the transmission of the polishing belt. 320435 16 200911453 . As the polishing tape 41, it is possible to apply abrasive grains such as *diamond particles or cerium nitride (Sic) particles to a single film belonging to the polishing surface, followed by a polishing tape 41 of a base film. The abrasive grain system is selected depending on the kind of the wafer W or the required properties, and for example, diamond particles or Sic particles having an average particle diameter of 〇.l#m to 5,0/zm may be used. Then, the belt-shaped abrasive cloth of the abrasive grains is used. Further, as for the base film, for example, it is possible to use polyester (polyester), polyurethane, and polyethylene terephthalate (p〇iyethyiene terephthalate). A film made of a flexible material, etc. Next, the operation of the polishing apparatus having the above configuration will be described. The wafer w is carried into the wafer through the opening 12 by a wafer transfer mechanism (not shown). Clamping mechanism 8〇 The wafer W is gripped from the hand of the wafer transport mechanism (see Fig. 3), and the first and second grippers μ are used to hold the f circle w. The hand 1 (8) of the wafer transport mechanism is crystallized. After the round w is granted to the first and second gripping hands 81, 82, 'moves to the outside of the outer cover 11, and then the shutter 1曰ΊΠ1. The wafer holding mechanism 8 that has held the wafer w is 曰曰0 w _ falling and placed on the upper surface of the wafer table 23. Then, driving the unillustrated vacuum pump 'make the wafer w adsorbed on the upper surface of the wafer table 23. σ constitutive 3 Π乍 23 and crystal The circle W is moved to the vicinity of the polishing head 42 by the table moving mechanism 30. Then, by the motor 吏 wafer table 23, the notch portion of the wafer w is aligned with the polishing head π. 'Starting to supply the polishing liquid from the polishing liquid to the circle W. At the time when the supply flow rate of the polishing liquid reaches a predetermined value 勹 = 320435 17 200911453 The movement mechanism 3G moves the wafer w to the position in contact with the polishing belt 4ΐ, The pick-up reciprocates the polishing head 42 by the reciprocating mechanism. Thereby, the grinding belt 41 is swung toward the traveling direction of the polishing belt 41 (OSC曰 曰 的 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 Or the rotating head 旋转 is rotated about the notch by the rotating mechanism. . . . ί ί During the grinding, the back surface of the polishing tape 41 and the back cymbal 5 are in contact with each other, and the backing system pulls the polishing tape 41 from the back side of the polishing tape 41. Pushing this to the curve!, the polishing tape 41 and the backing 5. The grinding surface of the grinding portion 41 along the notch portion will contact the notch portion: thus, the time required for the grinding of the notch portion can be shortened. Further, with the grinding action (4) transmitted by the polishing tape conveying mechanism 43, the raking is moved by the friction with the polishing tape 41, so the polishing tape 41 can withstand an excessive load. Therefore, the polishing tape 41 can be prevented. The cutting direction of the grinding belt 41 is guided by the guides (4) 57a, 5_, 1 which prevents the backlash 5〇 from being laterally offset with respect to the grinding belt 4! Since the position of the pulley 59d can be adjusted by the position of the pulley 4 · ι敫 & batch ° Because the tension of the back _ back pad 5 ,, it can eliminate the tension difference caused by the dimensional error between the moon pad 50. In this embodiment, the back pad 5 〇, pulley he ^ And the abutment can be a unit of the backing assembly. The backing assembly is configured to replace the pad with a lower angle so that the old back can be replaced with a new moon pad by replacing the backing assembly. In addition, the back pad may be replaced with the back pad of the following embodiment. A 320435 18 200911453 Next, a second embodiment of the present invention will be described with reference to FIG. 8 . The polishing head of the polishing apparatus according to the second embodiment is enlarged, and Fig. 9A shows the eighth _A. — Sectional view of line A, diagram of line of line, and section of line of E_E. Fig. 9b shows a section of line ##, bright surface and D-D line of Fig. 8. Since this embodiment is not yet The configuration of the month is the same as that of the first embodiment, and the first state is the same. Therefore, as shown in Fig. 8, the polishing head 65 of the present embodiment has a rod-shaped backing 6 extending linearly. The ends of the back 6 〇 == =. = 63 are respectively supported by the upper holder holder 67 and the lower holder (9) (10), which are centered by 〇 / a, Mb, and can be Ι 2 Ι ± θ _ 塾 塾6〇 is configured as the disc μ guided by the guides (4) and 57b, wide:: into the back one—the direction is two: the wide back, which has a vertical section according to the vertical and vertical directions... in the two ends of the traveling side, The pressing surface (the central part of the research.) is at the end: the middle part, the shape of the notch shape. The other part of the middle part of T Xing: the cross-sectional shape. That is, the back flat has According to this configuration, the center and the two ends of the center (four) are based on this configuration, and the knife is too much to push the surface. The poisonous field is used to make the research in the complex movement. 320435 19 200911453 The shape of the cross section used to push the crystal ❾ ❾ 〇 〇 〇 连续 连续 连续 会 会 会 会 会 会 会 会 会 会 会 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 因 因 因 因 。 。 。 。 The back pad 60 can abut the polishing tape 41 to the entire notch portion. Further, in the case where the polishing head 65 is tilted by the tilting mechanism, the cross-sectional shape of the back pad 60 can follow the notch portion in which the appearance becomes north. Further, since the back pad 60 is deformed following the shape of the notch portion during polishing, the polishing surface of the polishing tape 41 can be surely pressed to the entire notch portion. In this embodiment, the back pad 60 is used. The cross-sectional shape continuously changes depending on the position of the back pad 6 in the longitudinal direction, but may be configured to vary intermittently. Figure 10 is a view showing the grinding apparatus of the second embodiment of the present invention.
磨頭的其他例子的放大圖。第11A圖係顯示第10圖的A —A線的剖面圖、c—c、線的剖面圖、以及e—e線的剖面 圖。第11B圖係顯示第1〇圖的B —B線的剖面圖以及d — ϋ線的剖面圖。如第11A圖所示，此例的背塾Μ的中央 部與兩端部係具有比第9A圖所示的背墊60還尖的推壓 面。因此，推壓面的前端部係可確實地將研磨帶41抵接至 缺口部最深的部分。 接著筝照第12圖說明本發明的第三實施形態。第 12圖係顯示本發明的第三實施形態的研磨裝置的研磨頭 =放大圖。由於本實施形態未說明的構成與動作係與上述 第二實_態相同，因此省略重複的說明。 如第12圖所示，本實施形態的研磨頭90係具備有背 墊91該月墊91係具有圓形的剖面形狀。芯棒63的下部 係與上述第二實施形態相同’係固定在以軸68a為中心而 320435 20 200911453 可方疋轉的下部固持具68。另一方面，芯棒63的上部係鬆 弛地肷合至形成在上部固持具92的孔。因此，背墊91 正體係以軸68a為支點而可旋轉達預定角度。於芯棒63 的上部女裝有彈簧固持具94。於彈簣固持具94與上部固 持具92之間配置有彈簧（推壓構件）95。藉由該彈簧％，將 背墊91朝研磨帶41彈壓。 在本實施形態中，能藉由彈簧95而正確地調整背墊 、對研磨T 41之缺口部賦予的推壓力。此外，以研磨點 ^中。將彈簧95與支點（轴68a)大致對稱性地配置，藉此 一、】彈貝95獲得大的推壓力。因此，能將研磨頭整 一予、·I型化。此外，支點（軸68a)的位置並不限定於芯棒 63的下端附近’亦可在芯棒63下端直接設置成為支點的 °此外’在本實施形態中亦可使用上述第二實施形態的 著丄參照第13A圖至帛13C圖說明本發明的第四^ 第13Α®係顯示本發明第四實施形態的研磨裝3 =磨碩之放大圖。由於本實施形態未說明的構成與動七 係與上述第二實施形態相同，因此省略重複的說明。 如第13Α圖所不’本實施形態的研磨頭⑻係具備贵 〇:該月墊102係具有矩形的剖面。背墊⑽係固突 的支持構件63。支持構件”兩端係由兩 持且9、4 “冓件)9 5所保持。這些彈簧9 5係分別由彈簧固 由二贫所保持。亦即，支持構件63與彈簧固持且94俜μ 320435 21 200911453A magnified view of other examples of grinding heads. Fig. 11A is a cross-sectional view taken along line A-A of Fig. 10, a cross-sectional view taken along line c-c, a line, and a cross-sectional view taken on line e-e. Fig. 11B is a cross-sectional view showing the B-B line of the first drawing and a cross-sectional view of the d-ϋ line. As shown in Fig. 11A, the center portion and the both end portions of the back of the example have a pressing surface which is sharper than the back pad 60 shown in Fig. 9A. Therefore, the front end portion of the pressing surface can reliably abut the polishing tape 41 to the deepest portion of the notch portion. Next, a third embodiment of the present invention will be described with reference to Fig. 12 . Fig. 12 is a view showing a polishing head = enlarged view of the polishing apparatus according to the third embodiment of the present invention. Since the configuration and the operation system which are not described in the embodiment are the same as those in the second embodiment, the overlapping description will be omitted. As shown in Fig. 12, the polishing head 90 of the present embodiment is provided with a back pad 91 having a circular cross-sectional shape. The lower portion of the mandrel 63 is the same as that of the second embodiment described above, and is fixed to a lower holder 68 which is rotatable around the shaft 68a and 320435 20 200911453. On the other hand, the upper portion of the mandrel 63 is loosely kneaded to the hole formed in the upper holder 92. Therefore, the back pad 91 positive system can be rotated by a predetermined angle with the shaft 68a as a fulcrum. A spring holder 94 is attached to the upper portion of the mandrel 63. A spring (urging member) 95 is disposed between the magazine holder 94 and the upper holder 92. The back pad 91 is biased toward the polishing tape 41 by the spring %. In the present embodiment, the back pad and the pressing force applied to the notch portion of the polishing T 41 can be accurately adjusted by the spring 95. Also, to polish the point ^. The spring 95 is disposed substantially symmetrically with the fulcrum (shaft 68a), whereby the spring 95 obtains a large pressing force. Therefore, the polishing head can be made into a single shape. Further, the position of the fulcrum (shaft 68a) is not limited to the vicinity of the lower end of the mandrel 63. Alternatively, the fulcrum may be directly provided at the lower end of the mandrel 63. Further, in the present embodiment, the second embodiment may be used. BRIEF DESCRIPTION OF THE PREFERRED EMBODIMENTS Referring to Figures 13A to 13C, a fourth embodiment of the present invention is shown in an enlarged view of a polishing apparatus 3 according to a fourth embodiment of the present invention. Since the configuration and the seventh embodiment which are not described in the present embodiment are the same as those of the second embodiment, the overlapping description will be omitted. The polishing head (8) of the present embodiment is not limited to the case where the moon pad 102 has a rectangular cross section. The back pad (10) is a support member 63 that is fixed. The support members are held at both ends by two holdings and 9, 4 "clamps". These springs 9 5 are respectively held by the springs and the second lean. That is, the support member 63 is held by the spring and 94俜μ 320435 21 200911453
X 帶41彈壓。此外， 為三個以上。 彈貫95的數目並不限定於兩個，亦可 運動有直線運動^丨機構⑽。該直線 係將支持構件63的可動方向(亦即，背 、動方向）限制成朝研磨帶41的方向。亦即，背 墊102與支持構件63係 隻 1宁猎由泮η 95而朝研磨帶41推壓， 且，、動作為直線性地動作。 ^簧m持具94及直線運動導引機構iG3係較於基台 基° 61的位置係藉由定位銷1〇5而固定。支持構件 63及兩_簧95係由蓋體1G4所覆蓋。詳細而言，支持 構件63:前面與側面以及彈簧95的側面係隔著微小的間 隙而由盍體104所覆蓋。蓋體1〇4係固定於彈簧固持具％ 第13B圖係第13A圖所示的蓋體的正面圖。第沉 圖係從上方觀看時第13A圖所示的研磨裝置的—部分的剖 面圖。如帛13B圖與第13c圖所示，於蓋體1〇4的前面形 成有比背墊102稍大的矩形狀的孔1〇4a。背墊1〇2係貫穿 該孔104a而朝研磨帶41延伸，背墊1〇2係可相對於蓋體 104移動。 一 依據此種構成，能減少研磨頭1〇1在進行直線往復運 動（擺動（oscillation)運動）時施加於晶圓％的荷重的變動。 因此，能進行良好的研磨。藉由設置蓋體1〇4，能防止從 直線運動導引機構103等滑動構件所產生的微小灰塵附著 至晶圓W，而可進行乾淨的研磨。 接著，參照第14A圖至第14C圖說明本發明的第五實 320435 22 200911453 施形態。第14A圓係顯示本發明 、的研磨頭107之放大圖。第14B圖係態的研磨裝置 •的正面圖。第HC圓係從上方觀看時 圓所不的蓋體 裝置的一部分的剖面圖。由於本實施：態=斤示的研磨 動作係與上述第四實施形態相同，因此^略重與 凸=1=63的上端與下端分別形成凸部6心這也 凸：係肷合至形成在彈菁固持具94的凹部94a - ^所不，凹部94a係朝研磨帶41延伸之長孔，而 “系以可滑動的方式嵌合至凹部94a。亦即，支持構： 帶::動方方向向?藉由凸㈣與咖^^ 持;μ二因此，凸部63a與凹部仏係構成用以將支 :構件63的可動方向限制成朝研磨帶4!的方向之導引機 構0 接著，參照第15圖說明本發明的第六實施形態。第 15圖係顯示本發明的第六實施形態的研磨裝置的一部分 =平面圖。由於本實施形態未說明的構成與動作係與上述 第一至第五實施形態相同，因此省略重複的說明。 如第15圖所示，本實施形態的研磨裝置係具備有配置 在外罩11 (參照第2圖）内的第一缺口研磨單元4〇A與第二 缺口研磨單元40B。第一缺口研磨單元4〇A係具有第一實 施形態的研磨頭42與未圖示的供給捲筒以及回收捲筒。第 二缺口研磨單元40B係具有第二實施形態的研磨頭65與 未圖不的供給捲筒以及回收捲筒。第一及第二缺口研磨單 兀40A、40B係能以與晶圓工作台23(參照第2圖）上的晶 23 320435 200911453 且任一個研磨頭42、65皆可 第15圖係顯示第一缺口研磨 第二缺口研磨單元40B在預 圓w表面平行之方式移動， 進出至晶圓w的缺口部v。 單元40A配置於研磨位置，而 定的待機位置待機的狀態。 此外，研磨頭並不限定於兩個， J马二個以上。好 外，亦可從上述第一至第五實施形態 赶 來使甩。Μ由入筮,,π ^ ^ OD ^擇任一個研磨頭 二藉由士缺口研磨早元4〇八與第二缺口 疋備使用研磨面粗糙度分別不同的研磨帶，即可進 同型式的研磨。例如，能藉由第一如_ 问川， 峨研磨早兀40A將晶 0 W的缺口部予以粗研磨，接著 „ Λ 叹令積田第一缺口研磨罝； 40Β將缺口部予以細研磨。因 ^ ^ U此月b在—個研磨室内進行 不同型式的研磨。 丁 接者’荼照第16圖說明本發明的第七實施形態。第 圖係顯示本發明第七實施形態的研磨裝置的一部分的 平面圖。f n_16圖所示的研磨裝置的側面圖。由 於本Λ施形態未說明的構成與動作係與上述第一至第五實 施形態相同，因此省略重複的說明。 Λ 如第Μ圖與f 17圖所*，本實施形態的研磨裝置係 具備有配置在外罩U(參照f 2圖）内的缺口研磨單元的 與斜面研磨單元110。缺口研磨單元係具有第一實施形 態的研磨頭42與未圖示的供給捲筒以及回收捲筒。斜面研 磨單元no係具有：研磨頭112，係將研磨帶ιη的研磨 面抵接至晶圓w的斜面部並研磨該斜面部；未圖示的供給 捲筒，係將研磨帶ln供給至研磨頭112;以及未圖示的 320435 24 200911453 回收捲筒，係回收供給至研磨頭112的研磨帶 111。 缺口研磨單元40與斜面研磨單元11〇係形成為可相對 於晶圓工作台23上的晶圓表面w平行地移動。此外，缺 口研磨單it 40亦可從上述第一至第五實施形態中選擇之 任一個研磨頭來使用。依據本實施形態、，能在一個研磨室 内進行缺口部的研磨與斜面部的研磨。 接著’爹照第18圖說明具有上述研磨裝置的基板處理 裝置。如第18圖所示’本基板處理裝置係具有裝載/卸載 單元12G ’該農載/卸載單元m係載置用以收容複數個 晶圓W之晶圓匣125。該裝載/卸載單元12〇係設置於外 罩130的㈣130a。於外罩13〇内配置有第一搬運機器人 140A，該第-搬運機器人14qa係從晶圓^⑵取出晶圓 本基板處理裝置復具有··一次.研磨模組（研磨裝 置）15GA，係從上述第—至第七實施形態中所選擇；二次 研磨核組(研磨裝置）15GB，係從上述第—至第七實施形能 中所選擇；-次洗淨模組160A，係洗淨經過研磨的晶圓 以及二次洗淨模組16GB ’係清洗㈣se)經過一次洗淨 模組1繼所洗淨的基板，並使基板乾燥。這些模組i5〇a、 150B、160A、160B係收容於外罩13〇内。 -次洗淨模組160A係一邊供給洗淨液（例如純水）至 晶圓W的表面’―邊使進行旋轉的海輯接至晶®的周緣 ^缺口部及斜面部），以洗淨晶㈣的周緣部之裝置。二 次洗淨模組議係藉由夾持機構來把持晶圓％，並一邊 320435 25 200911453 .使晶，w旋轉一邊將清洗液（例如純水）供給至晶圓w，之 *後以高速使晶圓W旋轉而使晶圓w乾燥之裝置。 於外罩13〇的内部設置有第二搬運機器人140B。該第 二搬運機器人140B係配置於令其手（未圖示）可到達一次 研磨模組150A、二次研磨模組150B、一次洗淨模組l6〇A、 以及二次洗淨模組160B的位置。於第一搬運機器人14〇A 與第二搬運機器人14〇B之間配置有暫置台145。 f 接著，說明上述構成的基板處理裝置的動作。首先， '第一搬運機器人140A係從晶圓匣125取出一片晶圓w， 並放置於暫置台145。第一搬運機器人140B係保持暫置台 145上的晶圓W，並搬入至一次研磨模組15〇八。在一次研 磨模組15〇A中，係對晶圓w的缺口部（及斜面部）進行一 次研磨。第二搬運機器人14〇B係從一次研磨模組15〇A取 出經過研磨的晶圓w，並搬入至二次研磨模組15〇B。在 二次研磨模組150B中，係對晶圓W的缺口部（及斜面部） (進行二次研磨。 第二搬運機器人140B係從二次研磨模組15〇B取出經 過研磨的晶圓w，並搬入至一次洗淨模組16〇A。在—次 洗淨模組160A中，係洗淨晶圓臀的周緣部（缺口部及斜面 部）。第二搬運機器人140B係從一次洗淨模级i6〇a取出 經過洗淨的晶圓w，並搬入二次洗淨模組16〇B。在二次 洗淨模組160B中，係洗淨晶圓W並使其乾燥。第二搬^ 機器人140B係從二次洗淨模組16〇B取出經過乾燥的晶圓 w，並放置於暫置台14^第一搬運機器人14〇入係保持暫 320435 26 200911453 置台145上的晶圓w，並將晶圓w ,、〇_ 卫肿日曰® W搬回至晶圓匣125内。 、如此，進行晶圓w 一連串的處理。 • 在上述說明的實施形離ψ 、 知螞去处脊 糸以本技術領域具有通常 施本發明為目的來進行說明。因此，本發明並 即可二各：述實施形態’只要在本發明的技術思想範圍内 p 了以各種不同的形態來實施。 (產業上的可利用性） 研磨：：明係可利用於使用研磨帶來研磨基板的缺口部之 研磨裝置。 【圖式簡單說明】 圖。第1圖係顯示本發明—實施形態的研磨裝置的平面 第2圖係第！圖所示的研磨裝置的剖面圖。 « 3圖係顯示晶圓夾持機構的夾持手之平面圖。 第4圖係顯示第2圖的研磨頭的放大圖。 第5A圖至第5D圖係顯示背聲的剖面例之圖。 第6圖係用以說明往復運動機構之上面圖。 f 7A圖至第7D圖係第6圖的狐―i線的剖面圖。 弟8圖係顯示本發明第二實施形態的研磨裝置 碩之放大圖。X with 41 spring pressure. In addition, there are three or more. The number of the springs 95 is not limited to two, and it is also possible to move the linear motion mechanism (10). This straight line restricts the movable direction (i.e., the back, moving direction) of the support member 63 to the direction toward the polishing tape 41. That is, the back pad 102 and the support member 63 are pressed against the polishing tape 41 by the 泮η 95, and the operation is linear. The position of the spring m holder 94 and the linear motion guiding mechanism iG3 is fixed by the positioning pin 1〇5 from the base 61. The support member 63 and the two springs 95 are covered by the cover 1G4. Specifically, the support member 63 is covered by the body 104 with a slight gap between the front surface and the side surface and the side surface of the spring 95. The lid body 1〇4 is fixed to the front view of the lid body shown in Fig. 13A of the spring holder. The first sinker is a cross-sectional view of a portion of the polishing apparatus shown in Fig. 13A when viewed from above. As shown in Figs. 13B and 13c, a rectangular hole 1〇4a slightly larger than the back pad 102 is formed on the front surface of the lid body 1〇4. The back pad 1〇2 extends through the hole 104a and extends toward the polishing tape 41, and the back pad 1〇2 is movable relative to the cover 104. According to this configuration, it is possible to reduce the variation in the load applied to the wafer % when the polishing head 1〇1 performs the linear reciprocating motion (oscillation motion). Therefore, good polishing can be performed. By providing the lid body 1〇4, it is possible to prevent fine dust generated from the sliding member such as the linear motion guiding mechanism 103 from adhering to the wafer W, and clean polishing can be performed. Next, a fifth embodiment of the present invention will be described with reference to Figs. 14A to 14C. The 14A-circle shows an enlarged view of the polishing head 107 of the present invention. Figure 14B is a front view of the grinding apparatus. A cross-sectional view of a part of the cover device when the HC circle is viewed from above. Since the polishing operation of the present embodiment is the same as that of the fourth embodiment described above, the upper end and the lower end of the slightly larger and convex=1=63 respectively form the convex portion 6 and the convex portion 6 is also convex: the system is coupled to the formation The concave portion 94a of the elastic crystal holder 94 is not formed, and the concave portion 94a is a long hole extending toward the polishing tape 41, and is slidably fitted to the concave portion 94a. That is, the support structure: belt:: moving side The direction of orientation is supported by the convex (four) and the coffee; therefore, the convex portion 63a and the concave portion are configured to restrict the movable direction of the member 63 to the guiding mechanism 0 in the direction of the polishing belt 4! A sixth embodiment of the present invention will be described with reference to Fig. 15. Fig. 15 is a plan view showing a part of a polishing apparatus according to a sixth embodiment of the present invention, and a configuration and an operation system which are not described in the first embodiment. Since the fifth embodiment is the same, the overlapping description will be omitted. As shown in Fig. 15, the polishing apparatus of the present embodiment includes the first notch polishing unit 4A and the first disposed in the outer cover 11 (see Fig. 2). Two notch grinding unit 40B. First notch grinding unit 4〇A There is a polishing head 42 of the first embodiment and a supply reel and a recovery reel (not shown). The second notch polishing unit 40B includes the polishing head 65 of the second embodiment and a supply reel and a recovery reel which are not shown. The first and second notch grinding units 40A and 40B can be combined with the crystal 23 320435 200911453 on the wafer table 23 (see FIG. 2) and any one of the polishing heads 42 and 65 can be displayed in the 15th The one notch polishing second notch polishing unit 40B moves in parallel with the surface of the pre-circle w, and enters and exits the notch portion v of the wafer w. The unit 40A is disposed at the polishing position, and the predetermined standby position is in a standby state. It is not limited to two, and two or more J horses. In addition, it is also possible to rush from the first to fifth embodiments described above. Μ ^ ^ ^, π ^ ^ OD ^ select one grinding head two by The notch grinding is used in the same type of grinding as the grinding tape with different grinding surface roughness. For example, it can be ground by the first one, such as _ chuan, 峨 兀 兀 40A Grind the notch of the crystal 0 W, then „ Λ 叹Let the first gap of the field be ground 罝; 40 Β the notch will be finely ground. Because ^ ^ U this month b in a grinding chamber for different types of grinding.接接者 A seventh embodiment of the present invention will be described with reference to Fig. 16. Fig. 1 is a plan view showing a part of a polishing apparatus according to a seventh embodiment of the present invention. A side view of the polishing apparatus shown in the figure f n_16. Since the configuration and the operation system which are not described in the embodiment are the same as those of the above-described first to fifth embodiments, the overlapping description will be omitted. The polishing apparatus according to the present embodiment includes a bevel polishing unit 110 provided with a notch polishing unit disposed in the outer cover U (see FIG. 2). The notch polishing unit has the polishing head 42 of the first embodiment and a supply reel and a recovery reel (not shown). The bevel polishing unit no includes a polishing head 112 that abuts the polishing surface of the polishing tape i to the inclined surface portion of the wafer w and polishes the inclined surface portion; the supply reel (not shown) supplies the polishing tape ln to the polishing The head 112; and the 320435 24 200911453 unrecovered drum are recovered from the polishing belt 111 supplied to the polishing head 112. The notch grinding unit 40 and the bevel polishing unit 11 are formed to be movable in parallel with respect to the wafer surface w on the wafer stage 23. Further, the missing-polishing single-it 40 can also be used from any one of the first to fifth embodiments described above. According to this embodiment, the polishing of the notch portion and the polishing of the inclined surface portion can be performed in one polishing chamber. Next, a substrate processing apparatus having the above polishing apparatus will be described with reference to Fig. 18. As shown in Fig. 18, the present substrate processing apparatus has a loading/unloading unit 12G. The agricultural loading/unloading unit m mounts a wafer cassette 125 for accommodating a plurality of wafers W. The loading/unloading unit 12 is disposed on the (four) 130a of the outer cover 130. The first transfer robot 140A is disposed in the outer cover 13A. The first transfer robot 14qa extracts the wafer substrate processing device from the wafer (2), and has a polishing module (polishing device) 15GA. Selected from the first to seventh embodiments; the secondary polishing core group (polishing device) 15 GB is selected from the above-described first to seventh embodiments; the secondary cleaning module 160A is washed and ground. Wafer and secondary cleaning module 16GB 'system cleaning (four) se) After washing the substrate 1 after cleaning the module 1 and drying the substrate. These modules i5〇a, 150B, 160A, and 160B are housed in the housing 13A. - The secondary cleaning module 160A is supplied with a cleaning liquid (for example, pure water) to the surface of the wafer W, and the sea is rotated to the periphery of the wafer® (the notch and the inclined surface) to be washed. A device for the peripheral portion of the crystal (four). The secondary cleaning module is to hold the wafer % by the clamping mechanism, and to rotate the crystal, w to rotate the cleaning liquid (for example, pure water) to the wafer w, and then to the high speed. A device that rotates the wafer W to dry the wafer w. A second transfer robot 140B is provided inside the outer cover 13A. The second transfer robot 140B is disposed such that the hand (not shown) can reach the primary polishing module 150A, the secondary polishing module 150B, the primary cleaning module 16A, and the secondary cleaning module 160B. position. A temporary stage 145 is disposed between the first transfer robot 14A and the second transfer robot 14A. f Next, the operation of the substrate processing apparatus having the above configuration will be described. First, the first transfer robot 140A takes out a wafer w from the wafer cassette 125 and places it on the temporary stage 145. The first transfer robot 140B holds the wafer W on the temporary stage 145 and carries it to the primary polishing module 15-8. In one grinding module 15A, the notch portion (and the inclined surface portion) of the wafer w is once ground. The second transfer robot 14A removes the polished wafer w from the primary polishing module 15A and carries it to the secondary polishing module 15B. In the secondary polishing module 150B, the notch portion (and the inclined surface portion) of the wafer W is subjected to secondary polishing. The second transfer robot 140B removes the polished wafer from the secondary polishing module 15A. And moving into the cleaning module 16A. In the cleaning module 160A, the peripheral portion (notch portion and inclined surface) of the wafer buttocks is washed. The second transfer robot 140B is washed once. The mold stage i6〇a takes out the washed wafer w and carries it into the secondary cleaning module 16〇B. In the secondary cleaning module 160B, the wafer W is washed and dried. ^ The robot 140B takes out the dried wafer w from the secondary cleaning module 16A, and places it on the temporary stage 14^. The first transfer robot 14 breaks into the wafer w on the stage 145. The wafer w, 〇 卫 肿 曰 曰 W W 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬The present invention has been described for the purpose of generally applying the invention. Therefore, the present invention can be embodied in two different embodiments. 'As long as it is within the scope of the technical idea of the present invention, it is implemented in various forms. (Industrial Applicability) Polishing: A polishing system that can be used for polishing a notch portion of a substrate using a polishing belt. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a polishing apparatus shown in Fig. 2 of the polishing apparatus of the present invention. Fig. 3 shows a clip of a wafer holding mechanism. Fig. 4 is an enlarged view showing the polishing head of Fig. 2. Fig. 5A to Fig. 5D are diagrams showing a cross-sectional example of the back sound. Fig. 6 is a view for explaining the above diagram of the reciprocating mechanism. F 7A to 7D are cross-sectional views of the fox-i line of Fig. 6. Fig. 8 shows an enlarged view of the polishing apparatus according to the second embodiment of the present invention.
〜第9A圖係顯示第8圖的A_ A線、Cm以及E 圖：：的剖面圖;第9B圖係顯示第8圖的Β — β線的剖面 及D — D線的剖面圖。 第10圖係顯示本發明第二實施形態的研磨裝置的研 320435 27 200911453 磨頭之另一例的放大圖。 第ΠΑ圖係顯示第1〇~ Figure 9A shows a cross-sectional view of the A_A line, Cm, and E of Fig. 8; and Fig. 9B shows a cross section of the Β-β line and a cross-sectional view of the D-D line of Fig. 8. Fig. 10 is an enlarged view showing another example of the grinding head of the polishing apparatus according to the second embodiment of the present invention 320435 27 200911453. The first picture shows the first line
娩d二面 問的A—A線的剖面圖、C— C 線的剖面圖、以及E—E線 10 ^ 6, R 尺7 口J面圖，第11β圖係顯示第 1 υ圖的β — Β線的杳丨而圖洛^ ^ 面圖及D~D線的剖面圖。 第12圖係顯示本發明第二與 磨頭之放大圖。 一形態的研磨裝置的研 第圖係顯不本發明第四實施形態的研磨裝置的研 磨碩之放大圖；第13B圖係第 固._ M 1JA圖所不的蓋體的正面 圖，弟13C圖係從上方觀看時 I寸之弟13A圖所不的研磨裝置 的局部剖面圖。 弟14A圖係顯示本發明第五實施形態的研磨裝置的研 放大圖；第14B圖係第14A圖所示的蓋體的正面 回，第14C圖係從上方觀看時之第14A圖所示的研磨 的局部剖面圖。 ^ 第15圖係顯示本發明第六實施形態的研磨裝置的一 部分之平面圖。 第16圖係顯示本發明第七實施形態的研磨穿 部分之平面圖。 、 第17圖係第16圖所示的研磨裝置的侧面圖。 第18圖係顯示具備有上述研磨裝置的基板處理裝置 之示意圖。 【主要元件符號說明】 11、97、130外罩 12 開口部 13、18擋門 14 隔板 320435 200911453 15 上室（研磨室）16 下室（機械室） 17 貫穿孔 圓工作台單元（基板保持部） 23 晶圓工作台 26 溝 27A 第一中空轴 27B 第二中空軸 28、 75A、75B、75C 軸承 29 轴台 30 工作台移動機構 31 管 32 旋轉接頭 33A 第一可動板 33B 第二可動板 34 支持板 35A 第一線性導件 35B 第二線性導件 36 旋轉手臂 40 缺口研磨單元 40A 第一缺口研磨單元 40B 第二缺口研磨單 元 41、 111研磨帶 42 、 65 、 90、1〇1、107 研磨 43 研磨帶傳送機構 45a 供給捲筒 45b 回收捲筒 46 捲筒室 50 、 60 、 70、91、1〇2 背塾 50a、 50b、50c圓筒構件 50d 皮膜 57a、57b 1導引輥 58 研磨液供給喷嘴 59a、 59b、59c、59d、59e 滑輪 61 基台 63 芯棒（支持構件） 63a 凸部 67、92 上部固持具 67a、 68a、68b 軸 68 下部固持具 320435 29 200911453 71 可動手臂 72 72a 偏心軸 73 74 線性導件 76 77 C字形的溝 78 80 晶圓夾持機構 81 82 苐一爽持手 83 92a、 104a 孔 94 94a 凹部 95 100 晶圓搬運機構的 手 103 直線運動導引機構 104 蓋體 105 110 斜面研磨單元 120 125 晶圓匡 130a 140A 第一搬運機器人 140B 第二搬運機器人 145 暫置台 150A 150B 二次研磨模組 160A 160B 二次洗淨模組 bl 、 b3 、 b2 滾珠螺桿 Lt pi、ρ2、p3、p4、pll、pl2、pl3 ml、 m2、m3、m4、Ml、 M2 W 晶圓 凸輪轴 支持手臂 凸輪 支持軸 第一夾持手 壓抵件 彈簧固持具 彈簧（推壓構件） 定位銷 裳载/卸载單元 侧壁 一次研磨模組 一次洗淨模組 MO、bll皮帶 中心線 ' P14皮帶輪 馬達 320435 30The cross-section of the A-A line, the cross-section of the C-C line, and the E-E line 10^6, the R-foot 7 J-side diagram of the E-E line, and the 11th figure show the β of the 1st map. — 杳丨 图 图 图 ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ Fig. 12 is an enlarged view showing the second and grinding head of the present invention. The first drawing of the polishing apparatus of one embodiment is an enlarged view of the polishing apparatus of the fourth embodiment of the present invention; the 13th drawing is the front view of the cover of the first solid. _ M 1JA, the younger 13C The figure is a partial cross-sectional view of the polishing apparatus which is not shown in Fig. 13A when viewed from above. 14A shows a magnified view of the polishing apparatus according to the fifth embodiment of the present invention; FIG. 14B is a front view of the lid body shown in FIG. 14A, and FIG. 14C shows a front view of FIG. 14A when viewed from above. A partial section of the grinding. Fig. 15 is a plan view showing a part of a polishing apparatus according to a sixth embodiment of the present invention. Figure 16 is a plan view showing a polishing penetration portion of a seventh embodiment of the present invention. Fig. 17 is a side view showing the polishing apparatus shown in Fig. 16. Fig. 18 is a schematic view showing a substrate processing apparatus equipped with the above polishing apparatus. [Main component symbol description] 11, 97, 130 cover 12 Opening 13 and 18 stopper 14 Partition 320435 200911453 15 Upper chamber (grinding chamber) 16 Lower chamber (machine room) 17 Through hole round table unit (substrate holding unit) 23 wafer table 26 groove 27A first hollow shaft 27B second hollow shaft 28, 75A, 75B, 75C bearing 29 pillow block 30 table moving mechanism 31 tube 32 rotary joint 33A first movable plate 33B second movable plate 34 Support plate 35A first linear guide 35B second linear guide 36 rotating arm 40 notched grinding unit 40A first notched grinding unit 40B second notched grinding unit 41, 111 grinding belt 42, 65, 90, 1〇1, 107 Grinding 43 Abrasive belt conveying mechanism 45a Supply reel 45b Recycling reel 46 Reel chamber 50, 60, 70, 91, 1〇2 Backing 50a, 50b, 50c Cylindrical member 50d Film 57a, 57b 1 Guide roller 58 Grinding Liquid supply nozzles 59a, 59b, 59c, 59d, 59e pulley 61 base 63 mandrel (support member) 63a convex portion 67, 92 upper holding member 67a, 68a, 68b shaft 68 lower holding member 320435 29 200911 453 71 Movable arm 72 72a Eccentric shaft 73 74 Linear guide 76 77 C-shaped groove 78 80 Wafer clamping mechanism 81 82 苐一爽手手83 92a, 104a Hole 94 94a Recess 95 100 Hand of wafer handling mechanism 103 Linear motion guiding mechanism 104 cover 105 110 bevel polishing unit 120 125 wafer cassette 130a 140A first transfer robot 140B second transfer robot 145 temporary stage 150A 150B secondary polishing module 160A 160B secondary cleaning module bl, b3 , b2 ball screw Lt pi, ρ2, p3, p4, pll, pl2, pl3 ml, m2, m3, m4, Ml, M2 W wafer camshaft support arm cam support shaft first clamping hand pressure spring retainer Spring (pushing member) Locating pin lifting/unloading unit side wall once grinding module once cleaning module MO, bll belt center line 'P14 pulley motor 320435 30