200908818 九、發明說明： 【發明所屬之技術領域】 本發明係關於金屬被覆聚醯亞胺基板之製法，更具體 地說，關於一種能夠降低加熱金屬被覆聚醯亞胺基板時尺 寸變化的分散性、當作爲C O F使用時可進行穩固地接合、 並且可以改善不良率的金屬被覆聚醯亞胺基板之製法。 【先前技術】 近年來，作爲封裝液晶螢幕顯示圖像用的驅動用半導 ： 體之半導體封裝用基板，金屬被覆聚醯亞胺基板已被廣泛 使用。上述金屬被覆聚醯亞胺基板中所用的聚醯亞胺片具 有優良的耐熱性，並且在機械、電氣以及化學性能方面與 其他塑膠材料相比也不遜色，因此，被作爲例如印刷線路 板（PWB)、撓性印刷線路板（FPC)、卷帶自動接合用帶 (TAB}、覆晶薄膜（COF)等電子構件用的絕緣基板材料多方 面使用。這種PWB、FPC、TAB和COF，可以使用在聚醯 亞胺片的至少一面上被覆金屬層的金屬被覆聚醯亞胺基 L, 板，對其進行加工而製得。 其中’作爲封裝液晶畫面顯示用驅動I C晶片的手段， C O F特別引人注目。與以前的封裝手段T C P (T a p e C a r r i e 1· Package)相比，COF能夠進行細距（fine pitch)封裝，是 能夠容易實現驅動I C小型化和降低成本的封裝手段。作爲 這種C ◦ F的製造方法，一般是使用使高耐熱性、高絕緣性 樹脂聚醯亞胺片與通常作爲金屬導電體的良導體銅層黏合 而得到的金屬被覆聚醯亞胺基板，使該銅層通過光刻蝕法 形成精細圖案’並在所需要的地方鍍錫和被覆防焊膜而製 200908818 得的方法。 在製造上述金屬被覆聚醯亞胺基板時，作爲在聚醯亞 胺片表面上形成金屬層的方法，例如可以首先通過濺射法 形成包曰鎳、鉻、鎳鉻合金等的金屬薄層，再在其上形成 銅層以使其具有良好的導電性而製得。此外，爲了使用於 形成電路的導電層膜厚化’通常通過電鍍法，或者倂用電 鍍與無電鍍敷的方法形成銅等金屬導電體。 另外’上述由濺射法形成的金屬覆膜的厚度，通常爲 : 100〜500nm。另外，金屬導電體的厚度，例如，當通過 減成法形成電路時，通常爲5〜丨]#!!!。 這裏，當通過電鍍法形成金屬導電體時，可以使用例 如連續電鍍裝置’該裝置具有至少兩個用於供給電鍍液 的、槽內部與發揮陰極功能的電鍍面相對向地設置了陽極 的電鍍槽，多個槽在薄膜輸送方向上並排設置；並具有向 各電鍍槽供電的供電部和連續輸送薄膜狀基板用的機構。 例如，已公開了 一種連續電鍍的方法，該方法設置了多個 L,具有陽極和電解液的電鍍槽，將具有厚度爲3//m以下的 金屬覆膜的絕緣體片依次連續地供給到這些電鑛槽中，控 制每個電鍍槽的通電量’使各電鍍槽中的通電量按照該薄 膜的供給順序依次增加’可以連續地形成均勻良好的電鍍 膜（例如參照專利文獻1)。 通過如上所述的職射法和電鍍法形成金屬層的金屬被 覆聚醯亞胺基板，由於建立了容易實現金屬層的薄膜化， 並且可以保持聚醯亞胺片與金屬覆膜的平滑介面，同時獲 得了充分的黏合強度的技術，因此用其製得的COF適合於 200908818 電路的細距化。因此，已經開始批量生產了內引線部具有 25〜30//m節距的COF’並在繼續開發2〇//111節距以下 的細距C Ο F。 可是，COF係通過內引線接合裝載半導體晶片，然後 通過外引線封裝在液晶畫面上。通常，由於接合時供給的 熱量會使C O F的尺寸發生變化，因而要預先預測該變化 量’並事先對C O F上形成的電路，特別是內引線的節距和 外引線的節距進行校正。特別是20# m節距的COF，由於 是狹窄節距，必需對引線的節距進行嚴格的校正。 但是’即使是在使用由上述濺射法和電鍍法形成金屬 層的金屬被覆聚醯亞胺基板的情況下，對於2 0 v m節距的 C O F，接合時端部引線脫離所要接合的位置的比率也會增 加，因而出現不良率提高的問題。加熱金屬被覆聚醯亞胺 基板時尺寸變化的分散被認爲是其主要原因。由於這種狀 況，需要能夠進一步降低加熱時尺寸變化分散性的金屬被 覆聚醯亞胺基板。 【專利文獻1】特開平7 — 22473號公報（第1頁，第 2頁） 【發明內容】 發明所欲解決之課題 本發明的目的是鑒於上述以往技術的問題，提供能夠 降低加熱金屬被覆聚醯亞胺基板時尺寸變化的分散性、當 作爲COF使用時可進行穩固地接合’並且可以改善不良率 的金屬被覆聚醯亞胺基板之製法。 解決課題之手段 200908818 本發明者們爲達到上述目的，對金屬被覆聚醯亞胺基 板之製法反復專心硏究，結果發現，在包括在聚醯亞胺片 表面上形成金屬覆膜的濺射步驟，以及在所得的聚醯亞胺 片的金屬覆膜上使用連續電鍍裝置形成金屬導電體的電鍍 步驟的金屬被覆聚醯亞胺基板之製法中，在上述濺射步驟 中，形成具有特定表面電阻的金屬覆膜，可以抑制濺射中 受熱過程中的分散，而且可以降低後續電鍍時的陰極電流 密度差，並且，在上述電鍍步驟中，控制特定的陰極電流 密度，使電流密度分佈均勻化，同時調節特定的薄膜的輸 送速度，可以抑制疊層結構的介面氧化，並且所得金屬被 覆聚醯亞胺基板可以降低金屬層的殘留應力的分散程度， 降低對其加熱時尺寸變化的分散程度，當作爲 C O F使用 時，可進行穩固地接合、並且可以改善不良率，從而完成 了本發明。 即’根據本發明的第1項發明，提供一種金屬被覆聚 醯亞胺基板之製法，該方法包括在聚醯亞胺片表面上形成 金屬覆膜的濺射步驟、以及使用由輸送薄膜和向金屬覆膜 供電的輥和具有與該金屬覆膜相對向的陽極的至少兩個槽 的電鍍槽構成的連續電鍍裝置，在所得的聚醯亞胺片的金 屬覆膜上形成金屬導電體的電鍍步驟，其特徵在於滿足下 述（1 )和（2 )的條件。 (1) 在上述濺射步驟中，形成的金屬覆膜的表面電阻控 制在 Ο · 1 〜1 . Ο Ω / □。 (2) 在上述電鍍步驟中，陰極電流密度係控制在：全部 電鍍槽的平均陰極電流密度爲1〜3A/dm2，以及各電鍍槽 200908818 中陰極電流密度的最大値對最小値之比爲i〜5，同時將薄 膜的輸送速度調節爲80〜300m/h。 另外’根據本發明的第2項發明，提供一種金屬被覆 聚醯亞胺基板之製法，其特徵在於在第i項發明中，上述 陽極爲不溶性陽極。 另外’根據本發明的第3項發明，提供一種金屬被覆 聚醯亞胺基板之製法，其特徵在於在第2項發明中，上述 陰極電流密度係全部電鍍槽的平均陰極電流密度爲1.5〜 3 A/ dm2，各電鍍槽中陰極電流密度的最大値對最小値之比 爲1〜3’以及薄膜的輸送速度爲1〇〇〜300m/h。 另外’根據本發明的第4項發明，提供一種金屬被覆 聚醯亞胺基板之製法，其特徵在於在第1〜3任一項發明 中，上述金屬覆膜係由金屬種子層（seed layer)與其表面上 形成的銅層所構成。 另外，根據本發明的第5項發明，提供一種金屬被覆 聚醯亞胺基板之製法，其特徵在於在第1〜4任一項發明 中，上述金屬導電體爲銅。 根據本發明的金屬被覆聚醯亞胺基板之製法，可以降 低加熱所得的金屬被覆聚醯亞胺基板時尺寸變化的分散程 度，當將其作爲COF使用時，可進行穩固地接合，並且可 以改善不良率。特別是當用於以開發中的2 0 # m節距爲代 表的細距C Ο F時，由於接合時端部引線脫離所要接合的位 置的比率下降，大幅改善了不良率，因此其工業價値非常 大。 【實施方式】 -10- 200908818 具體實施方式 以下，對本發明的金屬被覆聚醯亞胺基板之製法進行 具體說明。 本發明的金屬被覆聚醯亞胺基板之製法是包括在聚醯 亞胺片表面上形成金屬覆膜的濺射步驟、以及使用由輸送 薄膜和向金屬覆膜供電的輥和具有與該金屬覆膜相對向的 陽極的至少兩個槽的電鍍槽構成的連續電鍍裝置，在所得 的聚醯亞胺片的金屬覆膜上形成金屬導電體的電鍍步驟的 金屬被覆聚醯亞胺基板之製法，其特徵在於滿足下述（1)和 (2 )的條件。 (1)在上述濺射步驟中，形成的金屬覆膜的表面電阻控 制在 0.1 〜1 · 0 Ω / □。 (2 )在上述電鍍步驟中，陰極電流密度係控制在：全部 電鍍槽的平均陰極電流密度爲1〜3A/dm2,以及各電鍍槽 中陰極電流密度的最大値對最小値之比爲1〜5 ’同時將薄 膜的輸送速度調節爲80〜30Qm/h。 在本發明的製造方法中，通過在滿足上述（1 )和（2 )的條 件下進行濺射步驟和電鍍步驟’控制形成的金屬覆膜的表 面電阻，同時使電鍍的平均陰極電流密度處於一定的範圍 內，以減小疊層結構每層的電流密度差’降低所形成的金 屬層的殘留應力的分散程度，並減少由供電導致的電鍍中 斷時間，抑制疊層結構的介面氧化’是很重要的。這樣’ 可以降低加熱時尺寸變化的分散性’當作爲C O F使用時’ 可以製得能夠穩固地接合的金屬被覆聚醯亞胺基板。 以下，對濺射步驟和電鍍步驟中形成的金屬層的殘留 -11 - 200908818 應力的分散，就其在現有技術中的問題以及在本發明製造 方法中的作用進行詳細的說明。 即，通常在使用金屬被覆聚醯亞胺基板形成COF的引 線時，如上所述，在引線的形成時增加了受熱過程等，對 光阻曝光用掩模上形成的圖案尺寸要進行一定的校正。這 是爲了事先預測直至與I c晶片接合時以及與液晶面板接 合時由受熱過程等引起的引線節距變化的量，以防止脫離 而進行的。 " 另外，引線節距變化的主要原因，是由於聚醯亞胺片、 金屬層以及防焊膜等COF的構成構件的熱脹冷縮等導致 的變形。這種由熱引起的變形是必然發生的現象，其變形 量可以通過試驗預先掌握。然而，問題是，這種變形量並 不一定，即是分散的，而且，這種變形量的分散性越大， 且引線節距越細距化，則上述脫離的可能性就越大。作爲 這些COF構成構件發生分散的原因，就聚醯亞胺片而言， 成膜時的受熱過程、延伸的分散以及薄膜厚度的分散是主 t; 要原因，另外，就防焊膜而言，厚度的分散是主要原因。 另一方面，就金屬層而言，雖然厚度的分散也是主要原因， 但金屬層的殘留應力的分散也產生很大的影響。 其中，在形成構成金屬層的金屬導電體的電鍍過程 中，作爲電鍍膜中殘留的應力分散的主要原因，聚醯亞胺 片上形成的陰極的電流密度（以下稱爲陰極電流密度）的變 化量具有最大的影響。也就是說，當通過電鍍法，在聚醯 亞胺片表面上的由濺射形成的金屬覆膜上形成金屬導電體 時，通常，在電鍍的初期階段，由於該金屬覆膜與其上形 -12- 200908818 成的電鍍膜很薄而電阻很大，因而不得不使電鍍槽的電流 密度極大地降低。之後，在達到一定電鍍厚度的成長階段， 因注重生產性和經濟性而採取使電鍍槽的電流密度急劇增 大的方法。例如，在以前的方法中，經電鍍槽形成的疊層 結構的電鍍膜，在由濺射形成的金屬覆膜的緊鄰上層，以 0.001〜0.01A/dm2的電流密度形成，而在最表層，以0.5 〜1 ·ΟΑ/dm2的電流密度形成。此時全部電鍍槽的平均電 流密度爲0.3〜0.7A/dm2。通常，電鍍膜的殘留應力與陰 極電流密度成正比，具有若電流密度高則應力也增大的傾 向。因此，在以前的方法中，通過如上所述寬範圍的電流 密度在疊層結構上形成電鍍膜的每層的殘留應力差係明顯 地非常大，這是尺寸變化分散的主要原因。 作爲抑制這種電鍍膜每層的殘留應力差的.手段，可以 考慮保持電鍍初期階段的極低電流密度不變，繼續進行電 鍍，但是這樣給生產力帶來極大的障礙，必需建立極長的 生產線，因而不現實。例如’當以平均電流密度〇.lA/dm2 ^ 電鍍至厚度爲8 // m時，電鍍時間必需達到5小時。另外’ 在極低電流密度下的電鍍雖然對降低殘留應力很有效’但 是由於對伸長率、抗拉強度、耐折曲性等其他重要的電鍍 膜的物性產生影響，因而認爲在現行的使用C O F的組裝步 驟中，引起接合以外的麻煩的可能性很高。另外’在低電 流密度下製得的電鍍膜由於耐折曲性變差’因而在c 0 F的 接合時斷路等的可能性增大。並且’在經濟性方面，平均 電流密度也需要確保在一定的値以上。 相比之下，在本發明的金屬被覆聚醯亞胺基板之製法 -13- 200908818 中，如上所述，通過在滿足上述（1)和（2 )的條件 步驟和電鍍步驟，控制形成的金屬覆膜的表面 使電鍍的平均陰極電流密度處於一定的範圍內 層結構每層的電流密度差，降低所形成的金屬 力的分散程度，並減少由供電導致的電鍍中斷 疊層結構的介面氧化。由此，提高了生產力。 作爲本發明的金屬被覆聚醯亞胺基板之製 聚醯亞胺片表面上形成金屬覆膜的濺射步驟和 亞胺片的金屬覆膜上形成金屬導電體的電鍍步 聚醯亞胺片表面上形成極薄的金屬覆膜，再通 厚到所需的厚度。 1. 濺射步驟 作爲上述濺射步驟，除上述（1)的條件以外 特別的限制，可以在聚醯亞胺片表面上，在形 金屬覆膜的，通常金屬被覆聚醯亞胺基板之製 的條件下進行。這裏，作爲上述濺射中所用的 沒有特別的限制，可以使用具有由含有構成金 素的規定組成構成的靶的磁控管濺射裝置等。 作爲上述製造方法中使用的聚醯亞胺片， 別的限制，可以使用Kapton EN (東麗.杜邦製 S(宇部興産製造）、Apical(卡湼卡製造）等市售 片。另外’作爲聚醯亞胺片的厚度，對其沒有_ 若考慮確保其彎曲性，較佳爲25〜50/zm。 作爲上述濺射過程中形成的金屬覆膜，對 的限制’爲了確保其與聚醯亞胺的黏合力以及 下進行濺射 電阻，同時 ，以減小4 層的殘留應 時間，抑制 法，包栝在 在所得聚醯 驟。即，在 過電鍍法增 ，對其沒有 成所需厚度 法中所使用 裝置，對其 屬覆膜的元 對其沒有特 造）、Upilex 的聚醯亞胺 ，別的限制， 其沒有特別 其耐熱性等 -14- 200908818 的可靠性’作爲金屬種子層’可以從鎳、鉻、鉬等金屬或 者鎳鉻合金等它們的合金中選擇，但較佳係相對於總量含 5〜30質量％鉻的鎳鉻合金。另外，其厚度較佳爲5〜 50nm。換句話說，因爲當用於COF等並將金屬層通過蝕 刻形成電子電路時，與作爲良導體的銅的蝕刻性有很大差 別的合金組成和厚度都是不合適的。 另外’爲了降低表面電阻以確保進行電鍍前的導電 性’較佳係繼續通過濺射在上述金屬覆膜表面上形成銅 : 層。作爲此時的銅層，要控制表面電阻爲滿足（1 )的條件的 規定値。換句話說，當厚度低於5 0 n m時，則不能獲得足 夠的導電性，將對之後電鍍的銅析出的均勻性產生不良影 響。另一方面，若厚度超過5 0 Onm，雖然在產生導電性方 面較好，但由於濺射對聚醯亞胺片的熱過程提高而對基板 的尺寸變化、變形等產生影響，恐怕對C O F等製得的產品 會產生不良影響。 上述製造方法中有關的（1)的條件在上述濺射步驟 中，控制所形成的金屬覆膜的表面電阻爲〇 . 1〜1 . Ο Ω / □。也就是說，通過降低濺射中形成的金屬覆膜的表面電 阻，可以提高自電鍍初期階段的電流密度’因此可以提高 平均陰極電流密度。然而，使上述金屬覆膜表面電阻的降 低，即是使上述金屬覆膜厚度的增加，這時，濺射使聚醯 亞胺片受到的熱量增加，必然分散程度也增大。結果，C 0 F 的接合時引線位置偏離的危險性增加。因此’在本發明製 造方法中，上述金屬覆膜的表面電阻要在由濺射產生熱量 的增加導致的分散程度不至於很大的範圍內選擇。 -15- 200908818 換句話說，當金屬覆膜的表面電阻低於Ο . 1 Ω / □時， 濺射熱過程的分散程度增大，接合時位置的偏離增加。另 一方面，若金屬覆膜的表面電阻超過1.0Ω/□，則電鍍初 期階段陰極電流密度必需控製得極低，從而增大了電鍍的 疊層結構的每層陰極電流密度差。或者，若以超過1.0Ω / □的狀態強制增大陰極電流密度，則會增大鍍膜的殘留應 力。另外，爲了減小濺射的熱過程的分散程度，並且減小 陰極電流密度差，金屬覆膜的表面電阻較佳係控制在〇 . 2 〜0.8 Ω / □。 作爲上述金屬覆膜的表面電阻的控制方法，由於其表 面電阻受濺射中形成的金屬覆膜的厚度、純度、結晶粒徑 等的影響，因而要獲得所需的表面電阻，可以通過選擇_ 射條件而進行。例如，在真空下進行的磁控管濺射中，在 由濺射形成銅層的場合，通過使銅層的厚度爲 300〜 10nm，可以使金屬覆膜的表面電阻爲0.1〜Ι.θΩ/口。 2. 電鍍步驟 作爲上述電鍍步驟，除了上述（2)的條件以外，對其 沒有特別的限制’可以在聚醯亞胺片上形成的滿足（1)條 件的金屬覆膜上，使用連續電鍍裝置，在形成金屬導電 體，通常金屬被覆聚醯亞胺基板之製法中所使用的條件下 進行。 另外，上述連續電鍍裝置是由輸送薄膜和向金屬覆膜 供電的輥和具有與該金屬覆膜相對向的陽極的至少兩個槽 的電鍍槽構成的裝置，例如’由於可以大幅節約設置空間， 使用在輸送線方向上並排設置了根據電鍍厚度等而定的必 -16 - 200908818 要數目的豎型電鍍槽的裝置。這裏，將具有金屬覆膜的一 定寬度的聚醯亞胺片以一定的速度依次連續地供給到電鍍 槽中’在金屬覆膜上連續地形成電鍍層。即，可以使用通 常金屬被覆聚醯亞胺基板之製法中所用的連續電鍍裝置， 該裝置具有與金屬覆膜接觸的可以供電的具有導電性的 輥、在該金屬覆膜相對向的位置設置了陽極的電鍍槽、向 該槽內供給薄膜的與電鍍液接觸並輸送的薄膜輸送機構。 作爲上述金屬導電體，對其沒有特別的限制，在c 0 F ' 等中較佳係做爲電路材料，並且可以使用電鍍被覆的導電 性優良的金屬或合金，較佳爲銅。此時作爲所用的電鑛液， 可以使用通常銅電鑛中所用的市售的硫酸銅電鍍液。 上述製造方法中有關的（2)條件，在上述電鍍步驟中是 陰極電流密度係控制在全部電鍍槽的平均陰極電流密度爲 1〜3A/dm2 ’以及各電鍍槽中陰極電流密度的最大値對最 小値之比爲1〜5，同時將薄膜的輸送速度調節爲8 〇〜 3 0 0 m / h。換句話說，是爲了降低滿足（1)條件的金屬覆膜 I ,上形成的金屬層的殘留應力的分散程度，抑制接合時的位 置偏離，而使電鍍的各層的平均陰極電流密度處於一定的 範圍內’以減小疊層結構每層的電流密度差。不過，作爲 電鑛的平均陰極電流密度，就抑制接合時的位置偏離而 言’減小疊層結構每層的陰極電流密度差即可，但是，考 慮到要確保耐折曲性以及生產性、經濟性方面，本發明製 造方法的電鍍步驟中，使用上述（2)的條件。 換句話說，作爲陰極電流密度，當全部電鍍槽的平均 陰極電流密度低於1 A / d m 2時，則難以確保其耐折曲性。 -17- 200908818 另一方面，若平均陰極電流密度超過3A/dm2，則難以抑 制殘留應力的分散。另外，在確保可靠性和經濟性方面， 全部電鍍槽的平均陰極電流密度較佳爲1.5〜3 A / d m 2。 並且，通過控制各電鏟槽中陰極電流密度的最大値對 最小値之比爲1〜5，使疊層結構各層內電流密度分佈均一 化，可以實現構成金屬層的金屬導電體的殘留應力進一步 均一化。這樣，可以使疊層結構整體的殘留應力均一化， 從而抑制分散。換句話說，若上述陰極電流密度的最大値 / 對最小値之比超過5，則由電流密度差導致的殘留應力差 增大，從而增大了分散性。另外，爲了使殘留應力均一化， 陰極電流密度較佳使陰極電流密度最大値對最小値之比爲 1〜3。 作爲上述陰極電流密度的控制方法，通常，在電鍍初 期階段，即金屬覆膜的表面電阻高的區域，上述連續電鍍 裝置的各電鍍槽內，電流密度極易集中在與供電輥接近的 電鍍液入口介面處，相反電鍍槽底部電流密度大幅降低， ; 因此，爲了抑制電鍍槽入口處電流密度的集中，需要在聚 醯亞胺片上的金屬覆膜與陽極之間設置適當的電流遮罩板 的方法等，而對其手段沒有特別的限制。例如，作爲電流 遮罩板，可以採取在絕緣板上設置開口部，調節其開口面 積的方法，通常使其在電流密度集中的電鍍液介面附近較 小，相反使電流密度小的電鍍槽底部較大。 另外，通過將薄膜的輸送速度調節爲80〜300m/h， 在將半導體晶片通過接合封裝在C ◦ F上並將半導體晶片 用樹脂密封時，可以避免引線表面鍍錫保護膜脫落的問 -18- 200908818 題。也就是說，由於上述連續電鍍裝置由多個電鍍槽和供 電部以及輸送機構構成，當使用該裝置將金屬導電體形成 疊層結構時，由於要向金屬覆膜及其上形成的電鍍膜供 電，因而會出現聚醯亞胺基板處於電鍍液外的時間’即疊 層結構的各層之間電鍍的中斷時間。若該電鍍中斷時間較 長，則在將所得基板通過刻蝕形成引線，並在其表面上通 過無電鍍敷形成鍍錫膜後，在將半導體晶片通過接合封裝 在COF上並將半導體晶片用樹脂密封時，會出現引線表面 的鍍錫保護膜發生脫落的危險性問題。 更具體地說，已知當將半導體晶片進行樹脂密封時’ 當經受3小時1 5 0 °C的熱負荷時，在引線表層部位錫與銅 發生合金化時會產生由於擴散速度差而產生的空隙’即所 謂的柯肯達爾（Kirkendall)空隙。在由上述連續電鍍裝置 製得鑛銅膜的疊層結構中，由下層對合金化所需銅離子的 供給，由於疊層結構介面狀態而發生延遲。在銅離子供給 處於延遲的狀態下’引線表層部位在沒有下層供給銅離子 的狀態下，存在銅向錫一側擴散而使空隙急劇增加 '擴大 的危險。而疊層結構介面越是氧化’即在電鍍液外的電鍍 中斷時間越長，則其危險性越大。因此，通過使薄膜的輸 送速度達到一定速度以上，使電鍍的中斷時間處於一定時 間以內，可以抑制疊層結構介面的氧化’從而抑制引線表 面鍍錫保護膜的脫落。 換句話說，當薄膜的輸送速度低於80m/h時，即使使 供電部小型化’電鍍中斷時間也會達到約3 0秒以上’上述 脫落的危險性增大。另一方面’若薄膜的輸送速度超過 -19- 200908818 3〇〇m/h >則會發生基板上產生缺陷等的危險。另外，爲 了使引線表面的鍍錫保護膜不發生脫落，較佳薄膜的輸送 速度達到1 0 0 m / h以上。 作爲上述連續電鍍裝置中使用的陽極，對其沒有特別 的限制，可以使用可溶性或不溶性陽極，然而，其中，通 過使用不溶性陽極，可以在顯示更好效果的電鍍條件下進 行。這時，較佳全部電鍍槽的平均陰極電流密度控制在1 . 5 〜3. OA/dm2,各電鍍槽中陰極電流密度的最大値對最小値 之比控制在 1〜3，同時將薄膜的輸送速度調節爲 1 0 0〜 3 0 0 m / h。另外，通常，在鍍銅中，可溶性陽極成問題的 是含磷的銅球表面上產生的碎屑等混入電鍍液中，出現使 電鍍外觀品質下降的問題，爲防止該問題，可以使用不溶 性陽極，而在金屬被覆聚醯亞胺基板之製法中，從抑制殘 留應力的分散、電鍍膜耐折曲性等角度出發，使用不溶性 陽極可以使電鍍電流密度條件、基板輸送速度最佳化。這 是因爲，不溶性陽極所具有的表面電位的均一性、電極間 距離的均一性發揮作用，與可溶性陽極相比更容易實現電 流密度的均一化。 作爲上述可溶性陽極，對其沒有特別的限制’可以使 用含有構成所形成的金屬導電體的元素的市售陽極’對於 獲得銅導體的情況，可以使用在鈦盒中塡充含磷銅球的陽 極0 作爲不溶性陽極，對其沒有特別的限制’可以使用以 鈦爲基體，表面上形成鉑或其氧化物薄膜的陽極等’較佳 例如具有在鈦網表面塗敷氧化銥結構的陽極° -20- 200908818 實施例 以下，藉由本發明的實施例和比較例對本發明進行更 具體的說明，但是本發明並不受此等實施例之任何限定。 另外，在實施例和比較例中使用的金屬覆膜的表面電阻和 金屬被覆聚醯亞胺基板作爲COF使用時的評價方法如下。 (1)金屬覆膜表面電阻的測定：按照JIS K 7194使用 四探針法進行。 (2 )金屬被覆聚醯亞胺基板作爲C Ο F使用時的評價： ' 使用所得金屬被覆聚醯亞胺基板，通過減成法，形成內引 線部爲2 0 // m節距、外引線部爲3 5 v m節距的引線圖案， 在引線表面通過無電鍍敷法形成厚度爲 〇.6μιη的覆錫 膜。然後，爲了抑制鍍錫膜中產生晶鬚的目的，在1 2 0 °C 下進行60分鐘熱處理，再在所需部位形成厚度爲l〇/zm 的防焊膜層，爲了使其熱硬化的目的，在120 °C下進行2 小時熱處理。熱處理後，爲了使內引線部與I C晶片的基座 部接合，將接合部在4 2 (TC下熱壓合1秒鐘，然後在IC晶 I 片及其周圍部位塗敷熱固化性樹脂，在150X：下進行3小 時熱處理’將IC晶片用樹脂封閉。然後，爲了將外引線部 位與液晶面板I τ Ο電極進行A C F接合，將接合部位在2 0 0 °C下熱壓合5秒鐘。 進行以上處理之後，觀察內引線部和外引線部的接合 部，求出由位置偏離導致的脫落等不良的發生率。 另外’顯示鍍錫的脫落性的指標，使用進行加速實驗 的評價結果。即，使用Roam & Hass公司製造的無電鍍 敷液TinpositLT — 34，在引線表面上形成厚度爲〇.6/zm -21 - 200908818 的鍍錫膜後，在1 6 0 °C下處理2 4小時，在該引線部位表面 上貼上透明帶’充分黏合後，剝離透明帶，在2 〇 〇倍的金 屬顯微鏡下確認有無錫鍍膜的脫落。 另外’實施例和比較例中使用的連續電鍍裝置如下。 第1圖表示了上述連續電鍍裝置的簡略結構的一個實 例。在第1圖中，連續電鍍裝置是具有用於輸送薄膜2和 向金屬覆膜及電鍍膜供電的不銹鋼製的供電輥3、以及在 電鍍槽1內使薄膜2反轉的反轉輥4、17個裝有陽極5的 • 電鍍槽1在輸送方向上並排設置的裝置的一個實例。 另外’在實施例和比較例中，各電鍍槽的槽內電鍍長 度，即浸漬於電鍍液的距離爲3000mm，各電鍍槽間用於 向電鍍面供電而在電鍍液外輸送基板的距離爲700mm。另 外，使用的電鍍槽數目，是基於各條件合理需要的槽數。 另外，陽極與金屬覆膜和電鍍膜之間設置了具有各種形狀 的電流遮罩板。此外，鑛銅液使用含硫酸1 8 0 g / L、硫酸銅 80g/L、氯離子50mg/L、以及爲確保鍍銅膜平滑性等目的 1 而添加的規定量的有機添加劑的鍍銅液。 (實施例1 ) 首先，通過在真空環境中運行的磁控管濺射裝置，聚 醯亞胺片使用Kapton 150 EN(東麗.杜邦製造），在真空 度保持爲0.01〜O.lPa的腔內，於150°C下進行1分鐘的 加熱處理。接著，使用相對於總量含2 0質量％鉻的鎳鉻合 金靶和銅靶，在聚醯亞胺片表面上形成厚度爲20nm的鎳 鉻合金層和厚度爲3 0 Onm的銅層。所得金屬覆膜的表面電 阻爲 0.1Ω / □。 -22- 200908818 然後，使用所得的濺射後的聚醯亞胺片，使用上述連 續電鍍裝置（電鍍槽數：17槽），在銅覆膜上層疊鍍銅層， 製得形成了銅導體的金屬被覆聚醯亞胺基板。這裡，作爲 上述連續電鑛裝置的陽極，使用鈦盒中塡充含磷的銅球、 盒周圍用聚丙烯製得的基質（基底）覆蓋的可溶性陽極。另 外，全部電鍍槽的平均電流密度（以下，也稱爲總平均電流 密度）控制在l.OA/dm2，以及各電鍍槽內陰極電流密度的 最大値對最小値之比控制在5，同時薄膜的輸送速度調節 * 爲8 0 m / h，直至厚度達到8 // m，形成由電鍍膜構成的銅 導體。 然後，使用所得的金屬被覆聚醯亞胺基板，按照上述 “金屬被覆聚醯亞胺基板作爲 COF使用時的評價方 法”，求出C Ο F接合部的位置偏離的不良發生率、引線斷 路發生率以及鍍錫膜脫落發生率。結果列於表1。 (實施例2) 除了各電鍍槽內陰極電流密度的最大値對最小値之比 C； 控制在3以外，與實施例1同樣地操作，使用所得的金屬 被覆聚醯亞胺基板，按照上述“金屬被覆聚醯亞胺基板作 爲c O F使用時的評價方法”，求出C O F接合部的位置偏 離的不良發生率、引線斷路發生率以及鍍錫膜脫落發生 率。結果列於表1。 (實施例3) 上述連續電鍍裝置的電鍍槽數爲1 2槽，總平均電流密 度控制在 1.5A/dm2 ,以及各電鍍槽內陰極電流密度的最 大値對最小値之比控制在3，除此以外，與實施例1同樣 -23- 200908818 地操作，使用所得的金屬被覆聚醯亞胺基板’按照上述“金 屬被覆聚醯亞胺基板作爲COF使用時的評價方法”，求出 C Ο F接合部的位置偏離的不良發生率、引線斷路發生率以 及鍍錫膜脫落發生率。結果列於表1。 (實施例4) 上述連續電鍍裝置的電鍍槽數爲6槽，總平均電流密 度控制在3.0 A / dm2，除此以外，與實施例1同樣地操作， 使用所得的金屬被覆聚醯亞胺基板，按照上述“金屬被覆 聚醯亞胺基板作爲COF使用時的評價方法”，求出C0F 接合部的位置偏離的不良發生率、引線斷路發生率以及鍍 錫膜脫落發生率。結果列於表1。 (實施例5) 上述連續電鍍裝置的電鍍槽數爲1 5槽，使用不溶性陽 極，總平均電流密度控制在1.5 A / d m 2，各電鍍槽內陰極 電流密度的最大値對最小値之比控制在3，以及薄膜的輸 送速度調節爲1 0 0 m / h，除此以外，與實施例1同樣地操 作，使用所得的金屬被覆聚醯亞胺基板，按照上述“金屬 被覆聚醯亞胺基板作爲C Ο F使用時的評價方法”，求出 COF接合部的位置偏離的不良發生率、引線斷路發生率以 及鑛錫膜脫落發生率。結果列於表1。另外，作爲不'溶个生 陽極，是在欽網表面上塗敷氧化銥的陽極，在電鍍槽內與 金屬覆膜和電鍍膜相對向地設置。 (實施例6 ) 上述連續電鍍裝置的電鍍槽數爲23槽，使用不、溶性陽 極，總平均電流密度控制在1.5A/dm2，各電鍍槽內陰極 -24- 200908818 電流密度的最大値對最小値之比控制在2，以及薄膜的輸 送速度調節爲1 5 0 m / h，除此以外，與實施例1同樣地操 作，使用所得的金屬被覆聚醯亞胺基板，按照上述“金屬 被覆聚醯亞胺基板作爲C O F使用時的評價方法”，求出 C OF接合部的位置偏離的不良發生率、引線斷路發生率以 及鍍錫膜脫落發生率。結果列於表1。另外，作爲不溶性 陽極，將在鈦網表面上塗敷氧化銥的陽極，在電鍍槽內與 金屬覆膜和電鑛膜相對向地設置。 (實施例7 ) 上述連續電鍍裝置的電鍍槽數爲8槽，使用不溶性陽 極，總平均電流密度控制在3.0 A / d m 2，各電鍍槽內陰極 電流密度的最大値對最小値之比控制在3，以及薄膜的輸 送速度調節爲1 0 0 m / h，除此以外，與實施例1同樣地操 作，使用所得的金屬被覆聚醯亞胺基板，按照上述“金屬 被覆聚醯亞胺基板作爲COF使用時的評價方法”，求出 COF接合部的位置偏離的不良發生率、引線斷路發生率以 及鑛錫膜脫落發生率。結果列於表1。另外，作爲不溶性 陽極，將在鈦網表面上塗敷氧化銥的陽極，在電鍍槽內與 金屬覆膜和電鍍膜相對向地設置。 (實施例8} 除了通過濺射形成厚度爲l〇nm的銅層，金屬覆膜的 表面電阻爲1.0 Ω / □以外，與實施例1同樣地操作，使用 所得的金屬被覆聚醯亞胺基板，按照上述“金屬被覆聚醯 亞胺基板作爲COF使用時的評價方法”，求出COF接合 部的位置偏離的不良發生率、引線斷路發生率以及鍍錫膜 -25- 200908818 脫落發生率。結果列於表1。 (實施例9 ) 通過濺射形成厚度爲10nm的銅層，金屬覆膜的表面 電阻爲1.0Ω/□，以及上述連續電鍍裝置的電鍍槽數爲6 槽，總平均電流密度控制在3. OA/dm2，除此以外’與實 施例1同樣地操作，使用所得的金屬被覆聚醯亞胺基板’ 按照上述“金屬被覆聚醯亞胺基板作爲C O F使用時的評 價方法”，求出C O F接合部的位置偏離的不良發生率、引 線斷路發生率以及鍍錫膜脫落發生率。結果列於表1。 (實施例1 0 ) 通過濺射形成厚度爲l〇nm的銅層，金屬覆膜的表面 電阻爲1.0Ω/□，上述連續電鍍裝置的電鍍槽數爲15槽， 使用不溶性陽極，總平均電流密度控制在 1.5A/ dm2，各 電鍍槽內陰極電流密度的最大値對最小値之比控制在3， 以及薄膜的輸送速度調節爲l〇〇m/h，除此以外，與實施 例1同樣地操作，使用所得的金屬被覆聚醯亞胺基板，按 照上述“金屬被覆聚醯亞胺基板作爲C O F使用時的評價 方法”，求出COF接合部的位置偏離的不良發生率、引線 斷路發生率以及鍍錫膜脫落發生率。結果列於表1。另外， 作爲不溶性陽極，將在鈦網表面上塗敷氧化銥的陽極，在 電鍍槽內與金屬覆膜和電鍍膜相對向地設置。 (實施例1 1) 通過濺射形成厚度爲l〇nm的銅層，金屬覆膜的表面 電阻爲1.0Ω/□，上述連續電鍍裝置的電鍍槽數爲8槽， 使用不溶性陽極，總平均電流密度控制在3.0 A / d m 2，各 -26- 200908818 電鍍槽內陰極電流密度的最大値對最小値之比控制在3， 以及薄膜的輸送速度調節爲l〇〇m/h，除此以外，與實施 例1同樣地操作，使用所得的金屬被覆聚醯亞胺基板，按 照上述“金屬被覆聚醯亞胺基板作爲 C O F使用時的評價 方法”，求出C O F接合部的位置偏離的不良發生率、引線 斷路發生率以及鍍錫膜脫落發生率。結果列於表1。另外， 作爲不溶性陽極，將在鈦網表面上塗敷氧化銥的陽極，在 電鍍槽內與金屬覆膜和電鍍膜相對向地設置。 (比較例1) 除了通過濺射形成厚度爲lOOOnm的銅層，金屬覆膜 的表面電阻爲0.0 9 Ω / □以外，與實施例1同樣地操作， 使用所得的金屬被覆聚醯亞胺基板，按照上述“金屬被覆 聚醯亞胺基板作爲COF使用時的評價方法”，求出COF 接合部的位置偏離的不良發生率、引線斷路發生率以及鍍 錫膜脫落發生率。結果列於表1。 (比較例2) k,、 除了通過濺射形成厚度爲5nm的銅層，金屬覆膜的表 面電阻爲1 . 1 Ω / □以外，與實施例1同樣地操作，使用所 得的金屬被覆聚醯亞胺基板，按照上述“金屬被覆聚醯亞 胺基板作爲C O F使用時的評價方法”，求出C Ο F接合部 的位置偏離的不良發生率、引線斷路發生率以及鍍錫膜脫 落發生率。結果列於表1。 (比較例3 ) 上述連續電鍍裝置的電鍍槽數爲20槽，總平均電流密 度控制在0.9A/dm2，除此以外，與實施例1同樣地操作， -27- 200908818 使用所得的金屬被覆聚醯亞胺基板，按照上述“金屬被覆 聚醯亞胺基板作爲C O F使用時的評價方法”，求出C O F 接合部的位置偏離的不良發生率、引線斷路發生率以及鍍 錫膜脫落發生率。結果列於表1。 (比較例4) 上述連續電鍍裝置的電銨槽數爲5槽，總平均電流密 度控制在3 · 5 A / dm2，除此以外，與實施例1同樣地操作， 使用所得的金屬被覆聚醯亞胺基板，按照上述“金屬被覆 / 聚醯亞胺基板作爲COF使用時的評價方法”，求出COF 接合部的位置偏離的不良發生率、引線斷路發生率以及鍍 錫膜脫落發生率。結果列於表1。 (比較例5) 除了各電鍍槽內陰極電流密度的最大値對最小値之比 控制在6以外，與實施例1同樣地操作，使用所得的金屬 被覆聚醯亞胺基板，按照上述“金屬被覆聚醯亞胺基板作 爲COF使用時的評價方法”，求出COF接合部的位置偏 離的不良發生率、引線斷路發生率以及鍍錫膜脫落發生 率。結果列於表1。 (比較例6) 除了上述連續電鍍裝置的電鍍槽數爲16槽，薄膜的輸 送速度調節爲7 0 m / h以外，與實施例1同樣地操作，使 用所得的金屬被覆聚醯亞胺基板，按照上述“金屬被覆聚 醯亞胺基板作爲COF使用時的評價方法”，求出COF接 合部的位置偏離的不良發生率、引線斷路發生率以及鍍錫 膜脫落發生率。結果列於表1。 -28- 200908818 I嗽 鍍錫膜脫落 發生率(％) 0.001 0.002 0.003 0.005 0.0005 0.00001 0.001 0.001 1_ 0.007 0.0008 0.002 0.001 0.001 0.002 0.009 0.001 0.01 引線斷路 發生率(％) 0.002 0.001 0.0005 0.0001 0.0003 0.0002 0.00005 0.003 0.0003 0.0005 0.0001 0.001 0.005 0.01 0.00005 0.005 0.002 擊一 B £ 赵掛 φ騮 锯鹋 ^ Iv 8鎧 0.005 0.001 0.003 0.008 0.0001 0.00005 0.001 0.006 0.008 0.0003 0.0007 0.01 0.01 0.004 0.01 0.01 0.005 輸送速度 (m/hr) 〇 00 ο 00 § Ο 00 100 150 100 Ο 00 Ο 00 100 100 ο 00 § Ο 00 Ο 00 Ο 00 Ο fei ψ 握1 is Έ ll ϋ ^ LO co CO ΙΟ CO CN CO LO ΙΟ CO CO i〇 ΙΟ LO ΙΟ \〇 l〇 總平均電流密 度(A/dm2) q r-H q to 3.0 ιο 1-H if)· r-H 3.0 q 3.0 LO τ-Η 3.0 q q r—Η 0.9 3.5 a r—i q r-H 金屬覆膜表面 電阻(Ω/口） d o d 1-Η Ο i-H d rH d i-H 6 o Ο τ-Η Ο r-H Ο 0.09 rH 1-H d 1-H d ί-Η d 1-H d 陽極 可溶性 可溶性 可溶性 可溶性 不溶性 不溶性 不溶性 可溶性 可溶性 不溶性 不溶性 可溶性 可溶性 可溶性 可溶性 可溶性 可溶性 實施例1 實施例2 實施例3 實施例4 實施例5 實施例6 實施例7 實施例8 實施例9 實施例10 實施例11 比較例1 比較例2 比較例3 比較例4 比較例5 比較例6 ,bl_ 200908818 由表1可知’在實施例1〜1 1中，在濺射步驟中，形 成的金屬覆膜的表面電阻被控制在0.1〜1.0Ω/□，在電 鑛步驟中’對於陰極電流密度’全部電鍍槽的平均陰極電 流密度被控制在1〜3 A / dm2，以及各電鍍槽內陰極電流密 度的最大値對最小値之比被控制在1〜5，同時薄膜的輸送 速度被調節爲80〜300 m/h，由於照本發明的製造方法製 造金屬被覆聚醯亞胺基板，COF接合部位置偏離的不良發 生率、引線斷路發生率以及鍍錫膜脫落發生率均低於 ， 0.0 1 %，可判斷爲良好。 相比之下，在比較例1〜6中，由於金屬覆膜的表面電 阻、全部電鍍槽的平均陰極電流密度、各電鍍槽內陰極電 流密度的最大値對最小値之比或者薄膜的輸送速度總有一 項不滿足這些條件，因此COF接合部位置偏離的不良發生 率、引線斷路發生率或者鍍錫膜脫落發生率總有一項爲 0.0 1 %以上，在這些條件下得到的金屬被覆聚醯亞胺基板 在生產性、產率和可靠性方面還不能說足夠好。 產業上的可利用性 由以上內容可知，由本發明製造方法製得的金屬被覆 聚醯亞胺基板適合用於以內引線爲2 0 /z m節距、外引線爲 35#m節距爲代表的細距COF。這樣，在1C與液晶面板 的組裝步驟中內引線部與1C晶片、以及外引線部與液晶面 板的接合時的脫落等問題、引線斷路等問題、以及鍍錫膜 脫落等發生的可能性可以得到充分的抑制。並且，本發明 的製造方法，由於還可以預期電鍍生產性的提高，因此在 生產性和經濟性方面也是有效的。根據本發明製得的金屬 -30- 200908818 被覆聚醯亞胺基板，除了 COF以外，還可以適用於PWB、 FPC、TAB等撓性線路板中。 【圖式簡單說明】 第1圖表示本發明金屬被覆聚醯亞胺基板之製法中所 用的連續電鍍裝置簡略結構的一個實例的圖。 【主要元件符號說明】 1 電鍍槽 2 薄膜 3 供電輥 4 反轉輥 5 陽極 -31-200908818 IX. Description of the Invention: [Technical Field] The present invention relates to a method for producing a metal-coated polyimide substrate, and more particularly to a method for reducing the dispersion of dimensional changes when heating a metal-coated polyimide substrate When used as a COF, it can be firmly bonded and can be used to improve the defect rate of a metal-coated polyimide substrate. [Prior Art] In recent years, as a semiconductor semiconductor package substrate for driving a liquid crystal display image, a metal-coated polyimide substrate has been widely used. The polyimine sheet used in the above-mentioned metal-coated polyimide substrate has excellent heat resistance and is inferior to other plastic materials in terms of mechanical, electrical and chemical properties, and thus is used as, for example, a printed wiring board ( Insulating substrate materials for electronic components such as PWB), flexible printed wiring boards (FPC), tape automatic bonding tapes (TAB), and flip chip (COF). These PWB, FPC, TAB, and COF, It can be obtained by processing a metal-coated polyiminoimide group L, a plate coated with a metal layer on at least one side of a polyimide film, and processing it as a means for encapsulating a driving IC wafer for liquid crystal display, COF It is particularly eye-catching. Compared with the previous packaging method TCP (T ape C arrie 1· Package), COF can perform fine pitch packaging, which is a packaging method that can easily realize miniaturization of driver ICs and reduce cost. In the method for producing C ◦ F, generally, a gold obtained by bonding a high heat resistance and high insulating resin polyimide film to a good conductor copper layer which is usually a metal conductor is used. A method of coating a polyimide substrate, forming a fine pattern by photolithography, and tinning and coating a solder resist film at a desired place to make a dielectric film of 200908818. The above-mentioned metal-coated polyimide substrate is fabricated. In the case of forming a metal layer on the surface of the polyimide sheet, for example, a thin metal layer of nickel, chromium, nickel-chromium alloy or the like may be first formed by a sputtering method, and a copper layer may be formed thereon to be In addition, in order to use a thick film of a conductive layer for forming a circuit, a metal conductor such as copper is usually formed by electroplating, or by electroplating or electroless plating. The thickness of the metal film formed by the sputtering method is usually 100 to 500 nm. Further, the thickness of the metal conductor, for example, when forming a circuit by a subtractive method, is usually 5 to 丨]#!!! When the metal conductor is formed by electroplating, for example, a continuous plating apparatus can be used. The apparatus has at least two channels for supplying a plating solution, and the inside of the tank is disposed opposite to the plating surface functioning as a cathode. The electrode plating tank has a plurality of grooves arranged side by side in the film conveying direction; and has a power supply portion for supplying power to each plating tank and a mechanism for continuously conveying the film-form substrate. For example, a method of continuous plating has been disclosed, which is provided. A plurality of L, an electroplating bath having an anode and an electrolyte, and an insulator sheet having a metal coating having a thickness of 3/m or less is sequentially supplied to the electro-chemical tanks in succession to control the amount of energization of each plating bath. The amount of energization in each plating bath is sequentially increased in the order of supply of the thin film. 'A plating film having a uniform uniformity can be continuously formed (for example, see Patent Document 1). The metal of the metal layer is formed by the above-described occupational method and plating method. The coated polyimide substrate has a technique of easily forming a thin film of the metal layer and maintaining a smooth interface between the polyimide film and the metal film, and at the same time obtaining a sufficient adhesive strength. The COF is suitable for the fine pitch of the 200,908,818 circuit. Therefore, the COF' having an inner lead portion having a pitch of 25 to 30/m has been mass-produced and the fine pitch C Ο F of 2 〇//111 pitch or less has been continuously developed. However, the COF is loaded with a semiconductor wafer by inner wire bonding and then packaged on a liquid crystal screen by an outer lead. In general, since the amount of heat supplied by the bonding changes the size of the C O F, the amount of change is predicted in advance and the pitch formed on the C O F, particularly the pitch of the inner leads and the pitch of the outer leads are corrected in advance. In particular, the COF of 20# m pitch, due to the narrow pitch, requires strict correction of the pitch of the leads. However, 'even in the case of using a metal-coated polyimide substrate having a metal layer formed by the above sputtering method and plating method, the ratio of the end lead wire to the position to be joined at the time of bonding for COF of 20 mm pitch. It will also increase, resulting in an increase in the rate of non-performing. The dispersion of the dimensional change when heating the metal-coated polyimide substrate is considered to be the main reason. Due to such a situation, there is a need for a metal-coated polyimide substrate which can further reduce the dispersion of dimensional change upon heating. [Problem to be Solved by the Invention] [Problem to be Solved by the Invention] An object of the present invention is to provide a reduction in heating metal coating in view of the problems of the prior art described above. A method for producing a metal-coated polyimide substrate which can be stably bonded when used as a COF and which can be stably bonded when used as a COF substrate. MEANS TO SOLVE THE PROBLEM In order to achieve the above object, the present inventors have repeatedly focused on the production method of the metal-coated polyimide substrate, and as a result, found that a sputtering step of forming a metal film on the surface of the polyimide film is found. And a method of forming a metal-coated polyimide substrate on a metal plating film of the obtained polyimide film using a continuous plating apparatus to form a metal conductor, in the sputtering step, forming a specific surface resistance The metal coating can suppress the dispersion in the heating process during sputtering, and can reduce the difference in cathode current density during subsequent plating, and in the above plating step, control the specific cathode current density to make the current density distribution uniform, Simultaneously adjusting the transport speed of the specific film can suppress the interface oxidation of the laminated structure, and the obtained metal-coated polyimide substrate can reduce the dispersion degree of the residual stress of the metal layer and reduce the dispersion degree of the dimensional change when heating. When used as a COF, it can be firmly joined and can improve the defect rate. And completed the present invention. That is, according to the first invention of the present invention, there is provided a method for producing a metal-coated polyimide substrate, the method comprising the steps of: forming a metal film on the surface of the polyimide film, and using the film and the film Electroplating of a metal conductor on a metal film of the obtained polyimide film by a continuous plating apparatus comprising a metal film-coated roller and a plating tank having at least two grooves of the anode facing the metal film The step is characterized in that the conditions of the following (1) and (2) are satisfied. (1) In the above sputtering step, the surface resistance of the formed metal film is controlled at Ο · 1 〜 1 . Ο Ω / □. (2) In the above electroplating step, the cathode current density is controlled so that the average cathode current density of all the plating baths is 1 to 3 A/dm 2 , and the ratio of the maximum 値 to the minimum 阴极 of the cathode current density in each plating bath 200908818 is i. ~5, at the same time adjust the conveying speed of the film to 80~300m/h. According to a second aspect of the invention, there is provided a method of producing a metal-coated polyimide substrate, characterized in that in the invention of the invention, the anode is an insoluble anode. According to a third aspect of the invention, there is provided a method of producing a metal-coated polyimide substrate, characterized in that in the second invention, the cathode current density is 1. 5 to 3 A/dm2, the ratio of the maximum 値 to the minimum 阴极 of the cathode current density in each plating bath is 1 to 3' and the conveying speed of the film is 1 〇〇 to 300 m/h. According to a fourth aspect of the invention, there is provided a method of producing a metal-coated polyimide substrate, characterized in that in the invention according to any one of the first to third aspects, the metal coating is a metal seed layer. It consists of a copper layer formed on its surface. According to a fifth aspect of the invention, the metal-coated polyimide substrate is characterized in that, in the invention according to any one of the first to fourth aspects, the metal conductor is copper. According to the method for producing a metal-coated polyimide substrate of the present invention, the degree of dispersion of the dimensional change when the metal-coated polyimide substrate is heated can be reduced, and when it is used as a COF, it can be firmly bonded and can be improved. Bad rate. In particular, when it is used for the fine pitch C Ο F represented by the 20 0 m pitch in development, the ratio of the position at which the end lead is detached at the time of joining is lowered, and the defective rate is greatly improved, so the industrial price 値Very big. [Embodiment] -10-200908818 BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, a method for producing a metal-coated polyimide substrate of the present invention will be specifically described. The metal-coated polyimide substrate of the present invention is produced by a sputtering step comprising forming a metal film on the surface of a polyimide film, and using a roller for supplying a film and supplying a metal film, and having a metal coating a method for preparing a metal-coated polyimide substrate having a plating step of forming a metal conductor on a metal film of the obtained polyimide film by a continuous plating apparatus comprising at least two grooves of a plating tank opposite to the anode, It is characterized by satisfying the conditions of the following (1) and (2). (1) In the above sputtering step, the surface resistance of the formed metal film is controlled at 0. 1 to 1 · 0 Ω / □. (2) In the above plating step, the cathode current density is controlled so that the average cathode current density of all the plating tanks is 1 to 3 A/dm 2 , and the ratio of the maximum 値 to the minimum 阴极 of the cathode current density in each plating bath is 1 〜 5 'At the same time, the conveying speed of the film is adjusted to 80 to 30 Qm / h. In the manufacturing method of the present invention, the surface resistance of the formed metal film is controlled by performing the sputtering step and the plating step under the conditions satisfying the above (1) and (2), while the average cathode current density of the plating is kept constant. In the range of reducing the current density difference of each layer of the laminated structure, the degree of dispersion of the residual stress of the formed metal layer is lowered, and the plating interruption time caused by the power supply is reduced, and the interface oxidation of the laminated structure is suppressed. important. Thus, the dispersibility of dimensional change upon heating can be reduced. When used as C O F, a metal-coated polyimide substrate which can be firmly joined can be obtained. Hereinafter, the dispersion of the residual -11 - 200908818 stress of the metal layer formed in the sputtering step and the plating step will be described in detail in the problems in the prior art and the effects in the manufacturing method of the present invention. That is, generally, when a metal-coated polyimide substrate is used to form a COF lead, as described above, a heating process or the like is added at the time of forming the lead, and a pattern size formed on the resist exposure mask is corrected. . This is to predict in advance the amount of change in the lead pitch caused by the heat receiving process or the like when it is bonded to the Ic wafer and when it is bonded to the liquid crystal panel to prevent detachment. " In addition, the main cause of the change in the lead pitch is deformation due to thermal expansion and contraction of the constituent members of the COF such as a polyimide film, a metal layer, and a solder resist film. This heat-induced deformation is an inevitable phenomenon, and the amount of deformation can be grasped in advance by experiments. However, the problem is that the amount of deformation is not necessarily, that is, it is dispersed, and the greater the dispersion of the amount of deformation, and the finer the pitch of the lead, the greater the possibility of the above-described detachment. As a cause of dispersion of these COF constituent members, in the case of a polyimide film, the heat transfer process, the dispersion of the stretching, and the dispersion of the film thickness at the time of film formation are main causes; and, in the case of the solder resist film, The dispersion of thickness is the main reason. On the other hand, in the case of the metal layer, although the dispersion of the thickness is also the main cause, the dispersion of the residual stress of the metal layer also has a large influence. Among them, in the electroplating process of forming the metal conductor constituting the metal layer, the amount of change in the current density (hereinafter referred to as cathode current density) of the cathode formed on the polyimide film is the main cause of stress dispersion remaining in the plating film. Has the biggest impact. That is, when a metal conductor is formed on a metal film formed by sputtering on the surface of a polyimide film by electroplating, usually, in the initial stage of electroplating, since the metal film is formed thereon - 12-200908818 The plating film is very thin and has a large electrical resistance, so the current density of the plating bath has to be greatly reduced. Then, in the growth stage in which a certain plating thickness is reached, a method of sharply increasing the current density of the plating bath is taken in consideration of productivity and economy. For example, in the prior method, the plating film of the laminated structure formed by the plating tank is in the immediate vicinity of the metal film formed by sputtering, and is 0. 001~0. The current density of 01A/dm2 is formed, while at the outermost layer, it is 0. 5 to 1 · The current density of ΟΑ/dm2 is formed. At this time, the average current density of all plating tanks is 0. 3~0. 7A/dm2. Generally, the residual stress of the plating film is proportional to the cathode current density, and the stress is also increased if the current density is high. Therefore, in the prior method, the residual stress difference of each layer forming the plating film on the laminated structure by the wide range of current densities as described above is remarkably very large, which is the main cause of dimensional dispersion dispersion. As a measure of the residual stress difference of each layer of this plating film. Means, it is possible to continue to carry out electroplating by keeping the extremely low current density in the initial stage of electroplating constant, but this poses a great obstacle to productivity and it is unrealistic to establish an extremely long production line. For example, 'when the average current density is 〇. lA/dm2 ^ When plating to a thickness of 8 // m, the plating time must be 5 hours. In addition, electroplating at very low current densities is effective for reducing residual stress, but it is considered to be in use due to its influence on the physical properties of other important plating films such as elongation, tensile strength and flex resistance. In the assembly step of the COF, there is a high possibility of causing troubles other than joining. Further, the plating film obtained at a low current density is deteriorated due to the deterioration of the flexural resistance, so that the possibility of disconnection or the like at the time of joining of c 0 F is increased. And in terms of economics, the average current density also needs to be guaranteed to be above a certain level. In contrast, in the method of preparing a metal-coated polyimide substrate of the present invention-13-200908818, as described above, the formed metal is controlled by the conditional steps and the plating step satisfying the above (1) and (2). The surface of the film is such that the average cathode current density of the plating is within a certain range, and the current density of each layer of the layer structure is poor, the degree of dispersion of the formed metal force is lowered, and the interface oxidation of the plating interruption laminated structure caused by the power supply is reduced. As a result, productivity is increased. a sputtering step of forming a metal film on the surface of the polyimide-coated polyimide substrate of the metal-coated polyimide substrate of the present invention and a plating step of forming a metal conductor on the metal film of the imide sheet An extremely thin metal film is formed thereon and then thickened to the desired thickness. 1. The sputtering step is particularly limited as long as the conditions of the above (1), and the conditions of the metal-coated, usually metal-coated polyimide substrate can be formed on the surface of the polyimide film. Go on. Here, the magnetron sputtering apparatus or the like having a target composed of a predetermined composition constituting a metal can be used as the sputtering. As the polyimine sheet used in the above production method, Kapton EN (Dongli.) can be used as another limitation. Commercial products such as DuPont S (made by Ube Industries) and Apical (made by Konica). Further, as the thickness of the polyimide film, it is preferably 25 to 50/zm in consideration of ensuring the flexibility thereof. As a metal film formed during the above sputtering process, the limitation is 'to ensure the adhesion to the polyimide and the sputtering resistance, and at the same time, to reduce the residual time of the four layers, the suppression method, Now you are in the gathering. That is, in the over-plating method, the device used in the method of not forming the desired thickness is not specially made for the film which belongs to the film, and the polyimine of Upilex is otherwise limited, and it is not particularly limited. Heat resistance, etc. -200908818 The reliability 'as a metal seed layer' may be selected from metals such as nickel, chromium, molybdenum, or nickel-chromium alloys, but preferably 5 to 30% by mass based on the total amount. Chrome nickel-chromium alloy. Further, the thickness thereof is preferably 5 to 50 nm. In other words, since when used for COF or the like and the metal layer is etched to form an electronic circuit, the alloy composition and thickness which are inferior to the etchability of copper as a good conductor are not suitable. Further, in order to lower the surface resistance to ensure conductivity before plating, it is preferable to continue to form a copper: layer on the surface of the above metal film by sputtering. As the copper layer at this time, the surface resistance is controlled so as to satisfy the condition of (1). In other words, when the thickness is less than 50 n, no sufficient conductivity can be obtained, which adversely affects the uniformity of copper deposition after plating. On the other hand, if the thickness exceeds 50 Å, it is preferable in terms of electrical conductivity. However, since the thermal process of the polyimide film is increased by sputtering, the size change and deformation of the substrate are affected, and COF or the like may be feared. The resulting product can have an adverse effect. The condition of (1) in the above production method controls the surface resistance of the formed metal film to be 〇 in the above sputtering step. 1~1. Ο Ω / □. Namely, by lowering the surface resistance of the metal film formed in the sputtering, the current density at the initial stage of electroplating can be increased', so that the average cathode current density can be increased. However, the reduction in the surface resistance of the above metal film is such that the thickness of the metal film is increased. In this case, the amount of heat received by the polyimide film is increased by sputtering, and the degree of dispersion is inevitably increased. As a result, the risk of deviation of the lead position at the time of engagement of C 0 F increases. Therefore, in the production method of the present invention, the surface resistance of the above metal film is selected within a range in which the degree of dispersion caused by an increase in heat generated by sputtering is not so large. -15- 200908818 In other words, when the surface resistance of the metal film is lower than Ο. At 1 Ω / □, the degree of dispersion of the sputtering heat process increases, and the deviation of the position at the time of bonding increases. On the other hand, if the surface resistance of the metal film exceeds 1. 0 Ω / □, the cathode current density in the initial stage of electroplating must be controlled to be extremely low, thereby increasing the difference in cathode current density per layer of the electroplated laminate structure. Or, if it exceeds 1. A state of 0 Ω / □ forcibly increases the cathode current density, which increases the residual stress of the coating. In addition, in order to reduce the degree of dispersion of the thermal process of sputtering and to reduce the difference in cathode current density, the surface resistance of the metal film is preferably controlled. 2 ~ 0. 8 Ω / □. As a method of controlling the surface resistance of the above metal film, since the surface resistance is affected by the thickness, purity, crystal grain size, and the like of the metal film formed during sputtering, it is possible to obtain a desired surface resistance by selecting _ The shooting conditions are carried out. For example, in the magnetron sputtering performed under vacuum, when the copper layer is formed by sputtering, the surface resistance of the metal film can be made 0 by making the thickness of the copper layer 300 to 10 nm. 1 ~ Ι. θΩ/port. 2. The electroplating step is not particularly limited as long as the conditions of the above (2), except that the metal film satisfying the condition (1) formed on the polyimide film can be formed by using a continuous plating apparatus. The metal conductor is usually carried out under the conditions used in the production method of the metal-coated polyimide substrate. Further, the above continuous plating apparatus is constituted by a transporting film and a plating tank that supplies power to the metal coating and a plating tank having at least two grooves of the anode opposed to the metal coating, for example, because the installation space can be greatly saved. A device in which a number of vertical plating tanks according to the plating thickness or the like is set side by side in the direction of the conveying line is used. Here, a polyimine sheet having a certain width of a metal film is sequentially supplied to the plating tank at a constant speed. The plating layer is continuously formed on the metal film. That is, a continuous plating apparatus used in a method of generally coating a metal-coated polyimide substrate having a conductive roller which is in contact with a metal film and having electrical conductivity can be used, and a position where the metal film is opposed to each other is provided. A plating tank for the anode, a film transport mechanism that supplies a film to the tank and is in contact with and transported by the plating solution. The metal conductor is not particularly limited, and is preferably used as a circuit material in c 0 F ' or the like, and a metal or an alloy having excellent conductivity, preferably copper, can be used. At this time, as the electric ore used, a commercially available copper sulfate plating solution used in a usual copper ore can be used. The condition (2) in the above manufacturing method is that in the plating step, the cathode current density is controlled so that the average cathode current density in all the plating tanks is 1 to 3 A/dm 2 ' and the maximum cathode current density in each plating bath is The minimum 値 ratio is 1 to 5, and the conveying speed of the film is adjusted to 8 〇 to 300 m / h. In other words, in order to reduce the degree of dispersion of the residual stress of the metal layer formed on the metal film I satisfying the condition (1), the positional deviation at the time of bonding is suppressed, and the average cathode current density of each layer of the plating is made constant. In-range' to reduce the current density difference of each layer of the laminated structure. However, as the average cathode current density of the electric ore, it is only necessary to reduce the difference in cathode current density per layer of the laminated structure in terms of suppressing the positional deviation at the time of joining, but in consideration of ensuring the resistance to flexing and productivity, In terms of economy, in the electroplating step of the production method of the present invention, the conditions of the above (2) are used. In other words, as the cathode current density, when the average cathode current density of all the plating tanks is less than 1 A / d m 2 , it is difficult to ensure the bending resistance. -17- 200908818 On the other hand, if the average cathode current density exceeds 3 A/dm2, it is difficult to suppress the dispersion of residual stress. In addition, in terms of ensuring reliability and economy, the average cathode current density of all plating tanks is preferably 1. 5 to 3 A / d m 2. Further, by controlling the ratio of the maximum 値 to the minimum 阴极 of the cathode current density in each of the electric shovel grooves to be 1 to 5, the current density distribution in each layer of the laminated structure is uniformized, and the residual stress of the metal conductor constituting the metal layer can be further developed. Uniformity. Thus, the residual stress of the entire laminated structure can be made uniform, and dispersion can be suppressed. In other words, if the ratio of the maximum 値 / to the minimum 阴极 of the above cathode current density exceeds 5, the residual stress difference caused by the difference in current density increases, thereby increasing the dispersibility. Further, in order to homogenize the residual stress, the cathode current density is preferably such that the cathode current density is the largest 値 to the minimum 値 ratio of 1 to 3. As a method of controlling the cathode current density, generally, in an initial stage of electroplating, that is, a region where the surface resistance of the metal film is high, in each plating tank of the continuous plating apparatus, the current density is easily concentrated in the plating solution close to the power supply roller. At the inlet interface, the current density at the bottom of the plating bath is greatly reduced; therefore, in order to suppress the concentration of current density at the entrance of the plating bath, it is necessary to provide a suitable current mask between the metal coating on the polyimide sheet and the anode. The method and the like, and there is no particular limitation on the means thereof. For example, as a current mask, a method of providing an opening on an insulating plate and adjusting an opening area thereof may be generally performed in a vicinity of a plating liquid interface in which current density is concentrated, and a bottom of the plating tank having a smaller current density. Big. Further, by adjusting the transport speed of the film to 80 to 300 m/h, when the semiconductor wafer is packaged on C ◦ F by bonding and the semiconductor wafer is sealed with a resin, it is possible to avoid the peeling of the tin plating protective film on the lead surface. - 200908818 questions. That is, since the above continuous plating apparatus is composed of a plurality of plating tanks, a power supply portion, and a conveying mechanism, when the metal conductor is formed into a laminated structure using the apparatus, the metal film and the plating film formed thereon are supplied with power. Therefore, there is a time when the polyimide substrate is outside the plating solution, that is, the interruption time of plating between the layers of the laminated structure. If the plating interruption time is long, the obtained substrate is formed by etching to form a lead, and a tin-plated film is formed by electroless plating on the surface thereof, and then the semiconductor wafer is packaged on the COF by bonding and the semiconductor wafer is resin-coated. When sealing, there is a risk that the tin-plated protective film on the surface of the lead will fall off. More specifically, it is known that when the semiconductor wafer is subjected to resin sealing, when subjected to a heat load of 1 hour at 150 ° C, when the tin is alloyed with copper at the surface portion of the lead, a difference in diffusion speed occurs. The gap 'is the so-called Kirkendall gap. In the laminated structure in which the ore film is obtained by the above continuous plating apparatus, the supply of copper ions required for alloying by the lower layer is delayed due to the interface state of the laminated structure. In the state in which the supply of copper ions is delayed, in the state where the copper layer is not supplied to the lower surface layer portion, there is a risk that copper will diffuse toward the tin side and the gap will increase sharply. The more oxidized the interface of the laminated structure, i.e., the longer the plating interruption time outside the plating solution, the greater the risk. Therefore, by setting the transport speed of the film to a certain speed or higher and the interruption time of the plating to be within a certain period of time, the oxidation of the laminated structure interface can be suppressed, thereby preventing the peeling of the tin-plated protective film on the lead surface. In other words, when the transport speed of the film is less than 80 m/h, even if the power supply portion is miniaturized, the plating interruption time is about 30 seconds or more. The risk of falling off is increased. On the other hand, if the transport speed of the film exceeds -19-200908818 3〇〇m/h >, there is a risk of defects or the like occurring on the substrate. Further, in order to prevent the tin-plated protective film on the surface of the lead from falling off, it is preferable that the transport speed of the film reaches 100 m / h or more. The anode used in the above continuous plating apparatus is not particularly limited, and a soluble or insoluble anode can be used, however, by using an insoluble anode, it can be carried out under plating conditions showing a better effect. At this time, it is preferred that the average cathode current density of all plating baths is controlled at 1. 5 ~ 3. OA/dm2, the ratio of the maximum 値 to 値 of the cathode current density in each plating bath is controlled to 1 to 3, and the conveying speed of the film is adjusted to 1 0 0 to 300 m / h. In addition, in copper plating, in general, the problem of the soluble anode is that the debris generated on the surface of the phosphorus-containing copper ball is mixed into the plating solution, and there is a problem that the appearance quality of the plating is lowered. To prevent this problem, an insoluble anode can be used. In the method for producing a metal-coated polyimide substrate, the plating current density condition and the substrate transport speed can be optimized by using an insoluble anode from the viewpoint of suppressing dispersion of residual stress and bending resistance of the plating film. This is because the uniformity of the surface potential and the uniformity of the distance between the electrodes of the insoluble anode function, and it is easier to achieve uniformization of the current density than the soluble anode. The soluble anode is not particularly limited, and a commercially available anode containing an element constituting the formed metal conductor can be used. For the case of obtaining a copper conductor, an anode in which a phosphorous-containing copper ball is filled in a titanium case can be used. 0 is an insoluble anode, and it is not particularly limited 'it is possible to use an anode or the like which forms a film of platinum or an oxide thereof on the surface of titanium.' It is preferable to have an anode which is coated with a ruthenium oxide structure on the surface of the titanium mesh. The present invention will be more specifically described by the examples and comparative examples of the present invention, but the present invention is not limited by the examples. Further, the surface resistance of the metal film used in the examples and the comparative examples and the evaluation method when the metal-coated polyimide substrate was used as COF were as follows. (1) Measurement of surface resistance of metal film: It was carried out in accordance with JIS K 7194 using a four-probe method. (2) Evaluation of the metal-coated polyimide substrate as C Ο F: 'The obtained metal-coated polyimide substrate was subjected to a subtractive method to form an inner lead portion of 20 0 m pitch and outer lead The part is a lead pattern of 3 5 vm pitch, and the thickness of the lead surface is formed by electroless plating. 6μιη tin-coated film. Then, in order to suppress the generation of whiskers in the tin plating film, heat treatment is performed at 120 ° C for 60 minutes, and a solder resist layer having a thickness of 10 Å/zm is formed at a desired portion, in order to thermally harden it. Purpose, heat treatment at 120 °C for 2 hours. After the heat treatment, in order to bond the inner lead portion to the base portion of the IC wafer, the joint portion is thermocompression-bonded at 4 2 (TC for 1 second), and then a thermosetting resin is applied to the IC crystal sheet and its peripheral portion. The heat treatment was performed for 3 hours at 150X: The IC wafer was sealed with a resin. Then, in order to perform ACF bonding of the outer lead portion and the liquid crystal panel I τ Ο electrode, the joint portion was heat-pressed at 200 ° C for 5 seconds. After the above processing, the joint portion between the inner lead portion and the outer lead portion is observed, and the occurrence rate of the defect such as the drop due to the positional deviation is obtained. Further, the index indicating the peeling property of the tin plating is used as the evaluation result of the accelerated test. That is, using the electroless plating solution Tinposit LT-34 manufactured by Roam & Hass, the thickness is 〇 on the surface of the lead. After the tin plating film of 6/zm -21 - 200908818, it is treated at 160 °C for 24 hours, and a transparent tape is attached to the surface of the lead portion. After the adhesive is sufficiently adhered, the transparent tape is peeled off at 2 times. Under the metal microscope, it was confirmed whether or not the tin plating film was peeled off. Further, the continuous plating apparatus used in the examples and comparative examples is as follows. Fig. 1 shows an example of a schematic structure of the above continuous plating apparatus. In the first embodiment, the continuous plating apparatus is provided with a stainless steel power supply roller 3 for transporting the film 2 and supplying power to the metal film and the plating film, and a reverse roller 4 for reversing the film 2 in the plating tank 1. An example of a device in which 17 electroplating tanks 1 are provided with anodes 5 arranged side by side in the conveying direction. In addition, in the examples and the comparative examples, the plating length of each plating bath, that is, the distance immersed in the plating solution is 3000 mm, and the distance between each plating tank for supplying power to the plating surface and transporting the substrate outside the plating liquid is 700 mm. . In addition, the number of plating tanks used is based on the number of tanks reasonably required for each condition. Further, a current mask having various shapes is disposed between the anode and the metal film and the plating film. In addition, the copper concentrate contains a copper plating solution containing a predetermined amount of an organic additive added with sulfuric acid of 180 g/L, copper sulfate of 80 g/L, chloride ion of 50 mg/L, and purpose of ensuring smoothness of the copper plating film. . (Embodiment 1) First, a polyimide tube using a Kapton 150 EN (Dongli.) by a magnetron sputtering apparatus operating in a vacuum environment. Made by DuPont), the vacuum is kept at 0. 01~O. The inside of the lPa was heated at 150 ° C for 1 minute. Next, a nickel-chromium alloy layer having a thickness of 20 nm and a copper layer having a thickness of 30 Onm were formed on the surface of the polyimide film using a nickel-chromium alloy target and a copper target containing 20% by mass of chromium in total. The surface resistivity of the obtained metal film was 0. 1Ω / □. -22- 200908818 Then, using the obtained sputtered polyimide film, a copper plating layer was laminated on the copper film by using the above continuous plating apparatus (the number of plating tanks: 17 grooves) to obtain a copper conductor. The metal is coated with a polyimide substrate. Here, as the anode of the above-described continuous electroplating apparatus, a soluble anode covered with a phosphorus-containing copper ball in a titanium case and a substrate (base) made of polypropylene around the case is used. In addition, the average current density (hereinafter, also referred to as total average current density) of all plating baths is controlled at 1. OA/dm2, and the ratio of the maximum 値 to minimum 阴极 of the cathode current density in each plating bath is controlled at 5, and the transport speed of the film is adjusted to * 80 m / h until the thickness reaches 8 // m, formed by plating film A copper conductor formed. Then, using the obtained metal-coated polyimide substrate, the occurrence rate of the positional deviation of the C Ο F joint portion and the occurrence of the lead disconnection were obtained by the above-mentioned "method of evaluating the use of the metal-coated polyimide substrate as COF". Rate and incidence of tin plating film shedding. The results are shown in Table 1. (Example 2) The ratio of the maximum 値 to the minimum 阴极 of the cathode current density in each plating bath was controlled. The control was carried out in the same manner as in Example 1, and the obtained metal-coated polyimide substrate was used, as described above. The metal-coated polyimide substrate was used as an evaluation method when cOF was used, and the occurrence rate of the COF junction portion, the occurrence rate of the lead disconnection, and the occurrence rate of the tin-plated film were determined. The results are shown in Table 1. (Embodiment 3) The number of plating tanks of the above continuous plating apparatus is 12 grooves, and the total average current density is controlled at 1. The obtained metal-coated polyimide substrate was used in the same manner as in Example 1 except that the ratio of the maximum 値 to the minimum 阴极 of the cathode current density in each plating tank was controlled to 3, and the same procedure as in Example 1 was carried out. 'According to the above-mentioned "method of evaluating the use of a metal-coated polyimide substrate as a COF", the occurrence rate of the positional deviation of the C Ο F joint portion, the occurrence rate of the lead wire breakage, and the incidence rate of the tin plating film were determined. The results are shown in Table 1. (Example 4) The number of plating tanks of the above continuous plating apparatus was 6 slots, and the total average current density was controlled at 3. In the same manner as in the first embodiment, the obtained metal-coated polyimide substrate was used in the same manner as in the above, and the COF was obtained by the above-mentioned "method of evaluating the use of the metal-coated polyimide substrate as COF". The occurrence rate of the positional deviation of the joint portion, the occurrence rate of the lead wire breakage, and the occurrence rate of the tin film peeling. The results are shown in Table 1. (Example 5) The number of plating tanks of the above continuous plating apparatus was 15 grooves, and the insoluble anode was used, and the total average current density was controlled at 1. 5 A / dm 2, the same as in the first embodiment except that the ratio of the maximum 値 to the minimum 阴极 of the cathode current density in each plating tank was controlled to 3, and the conveying speed of the film was adjusted to 100 m / h. Using the obtained metal-coated polyimide substrate, the occurrence rate of the positional deviation of the COF joint portion and the occurrence rate of the lead disconnection were obtained by the above-mentioned "evaluation method when the metal-coated polyimide substrate was used as C Ο F". And the incidence of tin film peeling. The results are shown in Table 1. Further, as the anode which is not dissolved, an anode which is coated with ruthenium oxide on the surface of the cymbal is provided in the plating tank so as to face the metal film and the plating film. (Example 6) The number of plating tanks of the above continuous plating apparatus was 23 slots, the use of the non-soluble anodes, and the total average current density was controlled at 1. 5A/dm2, the same as in the first embodiment, the cathode--24-200908818 in each plating bath, the ratio of the maximum 値 to the minimum 电流 of the current density is controlled to 2, and the transport speed of the film is adjusted to 150 m / h. By using the obtained metal-coated polyimide substrate, the occurrence rate of the positional deviation of the COF joint portion and the occurrence of lead disconnection were obtained by the above-mentioned "method of evaluating the use of the metal-coated polyimide substrate as COF". Rate and incidence of tin plating film shedding. The results are shown in Table 1. Further, as the insoluble anode, an anode of ruthenium oxide is coated on the surface of the titanium mesh, and is provided in the plating tank so as to face the metal film and the electrodeposited film. (Example 7) The number of plating tanks of the above continuous plating apparatus was 8 slots, and the insoluble anode was used, and the total average current density was controlled at 3. 0 A / dm 2, the same as in the first embodiment except that the ratio of the maximum 値 to the minimum 阴极 of the cathode current density in each plating tank was controlled to 3, and the transport speed of the film was adjusted to 100 m / h. Using the obtained metal-coated polyimide substrate, the "metal-coated polyimide substrate as a method for evaluating COF use" was used to determine the occurrence rate of the COF junction portion, the occurrence rate of the lead disconnection, and the ore. The incidence of tin film shedding. The results are shown in Table 1. Further, as the insoluble anode, an anode of ruthenium oxide is coated on the surface of the titanium mesh, and is provided in the plating tank so as to face the metal film and the plating film. (Example 8) The surface resistivity of the metal film was 1. except that a copper layer having a thickness of 10 nm was formed by sputtering. In the same manner as in Example 1, except that 0 Ω / □ was used, the obtained metal-coated polyimide substrate was used, and the COF joint portion was obtained by the above-mentioned "method for evaluating the use of a metal-coated polyimide substrate as a COF". The incidence of positional deviation, the incidence of lead disconnection, and the incidence of tinning film-25-200908818 shedding. The results are shown in Table 1. (Example 9) A copper layer having a thickness of 10 nm was formed by sputtering, and the surface resistance of the metal film was 1. 0 Ω / □, and the number of plating tanks of the above continuous plating apparatus is 6 slots, and the total average current density is controlled at 3. In the same manner as in Example 1, except that the OA/dm2 was used, the obtained metal-coated polyimide substrate was used. The COF bonding was determined according to the above-mentioned "method for evaluating the use of a metal-coated polyimide substrate as a COF". The rate of occurrence of the positional deviation of the part, the incidence of lead disconnection, and the incidence of tin plating film shedding. The results are shown in Table 1. (Example 10) A copper layer having a thickness of 10 nm was formed by sputtering, and the surface resistance of the metal film was 1. 0 Ω / □, the number of plating tanks of the above continuous plating apparatus is 15 slots, using an insoluble anode, the total average current density is controlled at 1. 5A/dm2, the same as in the first embodiment, except that the ratio of the maximum 値 to the minimum 阴极 of the cathode current density in each plating tank is controlled to 3, and the transport speed of the film is adjusted to 10 μm/h. The obtained metal-coated polyimide substrate was subjected to the above-mentioned "metal-coated polyimide substrate as a method for evaluating COF use", and the occurrence rate of the COF junction portion was found to be defective, the lead disconnection rate, and the tin-plated film were obtained. The incidence of shedding. The results are shown in Table 1. Further, as the insoluble anode, an anode of ruthenium oxide is coated on the surface of the titanium mesh, and is provided in the plating tank so as to face the metal film and the plating film. (Example 1 1) A copper layer having a thickness of 10 nm was formed by sputtering, and the surface resistance of the metal film was 1. 0 Ω / □, the number of plating tanks of the above continuous plating apparatus is 8 slots, using an insoluble anode, the total average current density is controlled at 3. 0 A / dm 2, each -26- 200908818 The ratio of the maximum 値 to minimum 阴极 of the cathode current density in the plating bath is controlled at 3, and the conveying speed of the film is adjusted to 10 μm/h, in addition to the examples. In the same manner, the obtained metal-coated polyimide substrate was used, and the "metal-coated polyimide substrate was used as a method for evaluating COF use", and the occurrence rate of the COF junction portion was found to be defective, and the lead was broken. Incidence and incidence of tin plating film shedding. The results are shown in Table 1. Further, as the insoluble anode, an anode of ruthenium oxide is coated on the surface of the titanium mesh, and is provided in the plating tank so as to face the metal film and the plating film. (Comparative Example 1) The surface resistance of the metal film was 0. except that a copper layer having a thickness of 100 nm was formed by sputtering. In the same manner as in the first embodiment, the obtained metal-coated polyimide substrate was used, and the COF joint portion was obtained in accordance with the above-mentioned "method for evaluation when the metal-coated polyimide substrate was used as a COF", except for 0 9 Ω / □. The occurrence rate of the positional deviation, the incidence of lead disconnection, and the incidence of tin plating film shedding. The results are shown in Table 1. (Comparative Example 2) k, except that a copper layer having a thickness of 5 nm was formed by sputtering, and the surface resistance of the metal film was 1. In the same manner as in Example 1, except that 1 Ω / □, the obtained metal-coated polyimide substrate was used, and the C Ο F junction was obtained by the above-mentioned "method of evaluating the use of the metal-coated polyimide substrate as COF". The rate of occurrence of the positional deviation of the part, the incidence of lead disconnection, and the incidence of tin plating film shedding. The results are shown in Table 1. (Comparative Example 3) The number of plating tanks of the above continuous plating apparatus was 20 grooves, and the total average current density was controlled at 0. In the same manner as in the first embodiment, the obtained metal-coated polyimide substrate was used in the same manner as in the first embodiment, and the above-mentioned "metal coated polyimide substrate was used as a method for evaluating COF use". The occurrence rate of the positional deviation of the COF joint portion, the occurrence rate of the lead wire breakage, and the incidence rate of the tin plating film fall were determined. The results are shown in Table 1. (Comparative Example 4) The obtained metal coated polycondensation was carried out in the same manner as in Example 1 except that the number of the ammonium halide tanks in the continuous plating apparatus was 5 slots and the total average current density was controlled to 3 · 5 A / dm 2 . The imine substrate was subjected to the above-mentioned "metal coating/polyimine substrate as a method for evaluating COF use", and the rate of occurrence of the positional deviation of the COF joint portion, the occurrence rate of the lead wire breakage, and the incidence rate of the tin plating film were determined. The results are shown in Table 1. (Comparative Example 5) The obtained metal-coated polyimide substrate was used in the same manner as in Example 1 except that the ratio of the maximum 値 to the minimum 阴极 of the cathode current density in each plating bath was controlled to 6 and the above-mentioned "metal coating" was used. The polyimine substrate was used as an evaluation method in the case of using COF, and the occurrence rate of the positional deviation of the COF joint portion, the occurrence rate of the lead wire breakage, and the incidence rate of the tin plating film were determined. The results are shown in Table 1. (Comparative Example 6) The obtained metal-coated polyimide substrate was used in the same manner as in Example 1 except that the number of plating tanks in the continuous plating apparatus was 16 grooves and the conveying speed of the film was adjusted to 70 m / h. According to the above-mentioned "method for evaluating the use of a metal-coated polyimide substrate as a COF", the occurrence rate of the positional deviation of the COF joint portion, the occurrence rate of the lead wire breakage, and the incidence rate of the tin plating film were determined. The results are shown in Table 1. -28- 200908818 I嗽 Tin film peeling rate (%) 0. 001 0. 002 0. 003 0. 005 0. 0005 0. 00001 0. 001 0. 001 1_ 0. 007 0. 0008 0. 002 0. 001 0. 001 0. 002 0. 009 0. 001 0. 01 lead disconnection occurrence rate (%) 0. 002 0. 001 0. 0005 0. 0001 0. 0003 0. 0002 0. 00005 0. 003 0. 0003 0. 0005 0. 0001 0. 001 0. 005 0. 01 0. 00005 0. 005 0. 002 击一 B £ 赵挂 φ骝 saw 鹋 ^ Iv 8铠 0. 005 0. 001 0. 003 0. 008 0. 0001 0. 00005 0. 001 0. 006 0. 008 0. 0003 0. 0007 0. 01 0. 01 0. 004 0. 01 0. 01 0. 005 conveying speed (m/hr) 〇00 ο 00 § Ο 00 100 150 100 Ο 00 Ο 00 100 100 ο 00 § Ο 00 Ο 00 Ο 00 Ο fei ψ grip 1 is Έ ll ϋ ^ LO co CO ΙΟ CO CN CO LO ΙΟ CO CO i〇ΙΟ LO ΙΟ \〇l〇 total average current density (A/dm2) q rH q to 3. 0 ιο 1-H if)· r-H 3. 0 q 3. 0 LO τ-Η 3. 0 q q r—Η 0. 9 3. 5 a r—i q r-H metal film surface resistance (Ω/mouth) d o d 1-Η Ο i-H d rH d i-H 6 o Ο τ-Η Ο r-H Ο 0. 09 rH 1-H d 1-H d ί-Η d 1-H d anodic soluble soluble soluble soluble insoluble insoluble insoluble soluble soluble insoluble insoluble soluble soluble soluble soluble soluble soluble example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Example 8 Example 9 Example 10 Example 11 Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Comparative Example 5 Comparative Example 6 , bl_ 200908818 It is known from Table 1 'In Example 1~ In 1 1 , in the sputtering step, the surface resistance of the formed metal film is controlled to be 0. 1~1. 0 Ω / □, in the electro-mine procedure, the average cathode current density of all plating baths for 'cathode current density' is controlled at 1~3 A / dm2, and the ratio of the maximum 値 to the minimum 阴极 of the cathode current density in each plating bath is Controlled at 1 to 5, and the transport speed of the film is adjusted to 80 to 300 m/h. Since the metal-coated polyimide substrate is produced by the manufacturing method of the present invention, the occurrence rate of the COF joint portion is deviated, and the lead wire breakage occurs. The rate and the incidence of tin plating film shedding are lower than, 0. 0 1 %, can be judged to be good. In contrast, in Comparative Examples 1 to 6, the surface resistance of the metal film, the average cathode current density of all the plating baths, the maximum 値 to minimum 値 ratio of the cathode current density in each plating bath, or the transport speed of the film. There is always one that does not satisfy these conditions, so the incidence of COF joint position deviation, the incidence of lead disconnection, or the incidence of tin film peeling are always 0. Above 0%, the metal-coated polyimide substrate obtained under these conditions cannot be said to be sufficiently good in terms of productivity, productivity, and reliability. INDUSTRIAL APPLICABILITY As is apparent from the above, the metal-coated polyimide substrate obtained by the production method of the present invention is suitably used for a pitch represented by an inner lead of 20 / zm pitch and an outer lead of 35 #m pitch. From the COF. As described above, in the assembly process of the liquid crystal panel, the inner lead portion and the 1C wafer, and the problem that the outer lead portion and the liquid crystal panel are detached during bonding, problems such as disconnection of the lead wire, and possibility of occurrence of peeling of the tin plating film can be obtained. Full inhibition. Further, the production method of the present invention is also effective in terms of productivity and economy since it is also expected to improve the productivity of electroplating. The metal -30-200908818 coated polyimide substrate prepared according to the present invention can be applied to a flexible wiring board such as PWB, FPC or TAB in addition to COF. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing an example of a schematic configuration of a continuous plating apparatus used in a method for producing a metal-coated polyimide substrate of the present invention. [Main component symbol description] 1 Plating tank 2 Film 3 Power supply roller 4 Reverse roller 5 Anode -31-