200905338 九、發明說明 【發明所屬之技術領域】 本發明係關於液晶裝置，特別是關於在所謂的邊緣場 開關（以下稱爲FFS( Fringe Field Switching))模式之 液晶裝置爲代表的元件基板，妥適地被適用於具備畫素電 極與共通電極雙方之液晶裝置之技術。此外，係關於該液 晶裝置之製造方法，及適用液晶裝置之電子機器。 【先前技術】 各種液晶裝置之中，FF S模式之液晶裝置，係於元件 基板與對象基板之中，在元件基板層積畫素電極、電極間 絕緣膜、被形成間隙部的共通電極，藉由對畫素電極與共 通電極施加的電場而驅動液晶（參照專利文獻1 )。 [專利文獻1]日本專利特開200 1 — 23 5 763號公報 【發明內容】 [發明所欲解決之課題] 於這樣的F F S模式之液晶裝置，作爲畫素開關元件， 使用採非晶矽膜之底閘極構造的薄膜電晶體’在此薄膜電 晶體之汲極電極直接以重疊的方式形成晝素電極時’因爲 畫素電極被形成爲與資料線相同的層間，所以有必要使畫 素電極離開資料線，會有畫素電極的形成區域很窄的問 題。 在此，本案發明人提出了 ’如圖7(a)所示’以覆蓋作 200905338 爲畫素開關元件之薄膜電晶體3 0的方式形成層間絕緣膜 6，透過此層間絕緣膜6的接觸孔6 a以及汲極電極5 b， 使畫素電極7a導電連接於薄膜電晶體30的汲極區域 1 d。圖7 ( a )所示之例，係爲了與本案發明進行對比而由本 案發明人所提案者，於畫素電極7a的上層，依序被形成 電極間絕緣膜8、被形成爲狹縫狀的間隙部6b之共通電 極9a、以及配向膜16。畫素電極7a以及共通電極9a， 均爲藉由膜厚lOOnm〜200nm之相同厚度的ΐτ〇( Indium Tin Oxide，銦錫氧化物）膜所構成。根據如此之構成， 可以使畫素電極7 a形成至接近於資料線5 a的位置，具有 可以增廣畫素電極7a的形成區域的優點。 使用這樣的構成之元件基板1 〇製造液晶裝置時，如 圖7(b)所示，於共通電極9a的表面側形成由聚醯亞胺樹 脂等所構成的配向膜16之後，使用摩擦輥40等擦過配向 膜1 6的表面進行摩擦處理，控制未施加電場的狀態之液 晶分子的配向。要使這樣的磨擦處理在配向膜1 6的表面 全體均勻地進行’配向膜1 6的表面最好爲平坦的，所以 針對層間絕緣膜6最好使用有機平坦化膜。 然而，在圖7(a)、圖7(b)所示的構成進行摩擦處理 時，於共通電極9 a的間隙部9 b的內側’對共通電極9 a 在摩擦輥的進行方向側，會有起因於共通電極9a的厚度 之大的階差爲原因而導致不良情形會跨廣範圍地發生之問 題點，這樣的磨擦不良1 6 a，成爲對比的降低等使顯示影 像的品質降低的原因。這樣說來，若使共通電極9以及畫 -5- 200905338 素電極7a的膜厚更薄的話，共通電極9a的電阻增大，相 關的電阻增大，會成爲在影像內發生亮度不均等的原因。 除了即述摩擦不良以外，共通電極9a的厚度太大 時’起因於階差自身會產生配向不良，或者起因於畫素內 之共通電極9a被形成的區域，與狹縫狀間隙部gb之液晶 層的厚度變化而有使顯示的對比降低之虞。 前述課題，不限於在電極間絕緣膜8上形成共通電極 9a的場合’在電極間絕緣膜8上形成畫素電極的場合 也同樣產生。 有鑑於以上之問題點，本發明之課題在於提供不增大 電極層之電阻，而可以抑制電極間絕緣膜8上形成的電極 的厚度所導致之顯示不良的發生之液晶裝置。 [供解決課題之手段] 爲了解決前述課題，相關於本發明之液晶裝置，係具 備複數之畫素而構成，對應於各前述畫素設有開關元件而 成之液晶裝置，其特徵爲具備：前述開關元件被形成而構 成之元件基板、被形成於前述開關元件之上的層間絕緣 膜、被形成於前述層間絕緣膜上的第1電極層、及被形成 於前述元件基板，介由電極間絕緣膜而與前述第1電極平 面重疊的第2電極層；各前述畫素，包含前述第1電極層 與前述第2電極層平面重疊的第1區域、及前述第1電極 層與前述第2電極層之中僅前述第1電極層被形成的第2 區域’前述第2電極層之膜厚比前述第1電極層之膜厚還 -6- 200905338 要薄。 接著，以前述元件基板被施以配向處理爲特徵。作爲 配向處理之一例，於第2電極層上形成由聚醯亞胺樹脂等 所構成的配向膜之後，使用摩擦輥擦過配向膜之表面進行 摩擦處理。根據本發明，於第1區域與第2區域之邊界在 前述配向膜被形成階差，但因使第2電極層之膜厚設定爲 比第1電極層更薄，所以起因於第2電極層的厚度之階差 很低，可以防止摩擦不良的產生，即使產生摩擦不良的場 合，其區域也極爲狹窄。因此，可以防止起因於摩擦不良 的對比降低。 本發明之效果，於進行前述之摩擦處理的場合最爲顯 著，但於其他配向處理方法，例如，使光線對感光性高分 子膜從斜方向照射的方法，或根據斜方向蒸鍍膜之配向處 理方法等，也藉由使被形成於元件基板上的階差抑制爲很 低，而可以減低液晶之配向不良。 本發明，係使第1電極層與第2電極層之膜厚平衡最 佳化者，不僅僅是使第1電極層與第2電極層之雙方的膜 厚變薄者’所以不會增加第1電極層及第2電極層合起來 之全體的電阻。亦即，於影像內不會發生亮度不均等等。 因而，根據本發明，可以顯示品質高的影像。 於本發明’可以採用弟1電極層及第2電極層之任一 方係被接續於前述開關元件的畫素電極，另一方係跨前述 複數畫素而被形成的共通電極之構成。特別是，第1電極 層爲前述共通電極，而第2電極層爲畫素電極者較佳。因 200905338 爲使共通電極的膜厚增厚，電阻的增大作爲亮度不均等 容易顯著化的共通電極的電阻可以降低，所以影像內不 發生亮度不均。 於本發明，特徵爲第2區域係由被設於前述第2電 層的開口或者狹縫所構成。 於本發明，特徵爲層間絕緣膜係包含有機物質之平 化膜。如此構成，因爲配向膜的表面變成平坦，所以可 摩擦處理全面均勻地進行。 於本發明，特徵爲構成第1電極層及第2電極層的 料之比電阻率大致相等。在本發明，使第2電極層變薄 而使第1電極層之膜厚增厚，所以減低起因於第2電極 厚度之階差，同時防止作爲電極層全體之電阻的增大。 即’在第1電極層的比電阻率與第2電極層之比電阻率 似的場合’本發明之效果變得顯著。最佳者爲，第丨電 層與第2電極層一起以相同的材料形成。於第1電極層 第2電極層以不同的材料形成的場合，只要第1電極層 比電阻率與第2電極層之比電阻率之差在5χ1〇ε-4Ω. 以下的話’根據本發明的構成之電極膜厚與電阻的調整 有效。作爲第1電極層或第2電極層之具體的組合，例 可以考慮 ITO、ίζο、ΖηΟ、Ιη2〇3-ΖηΟ 等。 本發明之液晶裝置之製造方法，係製造具備複數之 素而構成’對應於各前述畫素設有開關元件而成之液晶 置之製造方法’其特徵爲具備：於前述元件基板形成前 開關元件之步驟、於前述開關元件上形成層間絕緣膜之 等 會 極 坦 使 材 ， 的 亦 近 極 與 的 cm 爲 如 畫 裝 述 步 -8 - 200905338 驟、於前述層間絕緣膜上形成第1電極層之步驟、及 述元件基板，形成介由電極間絕緣膜而與前述第1電 面重疊的第2電極層之步驟；於形成前述第2電極層 驟’以在前述第2電極層形成開口或狹縫，同時前述 電極層之膜厚比前述第1電極層之膜厚還要薄的方式 前述第2電極層。 於BII述之液晶裝置之製造方法，最好是進而包含 述第2電極上形成配向膜的步驟，及摩擦處理前述配 的步驟。 適用本發明之液晶裝置，作爲行動電話或可攜電 電子機器之顯示部而使用。 【實施方式】 以下，說明本發明之實施型態。又，在以下的說 爲了使與圖7 5所示的構成之對應關係容易理解，具 通功能的部分賦予同一符號進行說明。此外，於在以 說明所參照的各圖，爲了使各層或各構件在圖面上標 可辨識的大小，所以使各層或各構件的比例尺不同 外，彩色濾光片等之圖不被省略。 〔實施型態1〕 (全體構成） 圖1(a)、圖1 (b)之各個，係適用本發明之液晶裝 被形成於其上的各構成要素一起由對向基板之側所見 於前 極平 之步 第2 形成 於前 向膜 腦等 明， 有共 下的 示爲 。此 置與 的平 -9- 200905338 面圖，以及其Η - Η ’剖面圖。 於圖1 (a )、圖1 (b)，本型態之液晶裝置1 〇〇，係透 過型之主動矩陣型液晶裝置，於元件基板1 0上，密封材 107以沿著對向基板20之邊緣的方式被設置。於元件基 板1 0，於密封材1 0 7之外側的區域，資料線驅動電路1 〇 1 與實裝端子1 〇 2沿著元件基板1 0的一邊被設置，沿著鄰 接於實裝端子1 0 2被配列的邊之2邊，被形成掃描線驅動 電路1 04。進而，亦有利用框緣1 0 8之下等，設置預充電 電路或檢查電路等周邊電路。對向基板20，具備與密封 材107幾乎相同的輪廓，藉由此密封材107對向基板20 被固接於元件基板10。接著在元件基板1〇與對向基板20 之間保持液晶5 0。 詳如後述，於元件基板1 〇，畫素電極7a被形成爲矩 陣狀。對此，於對向基板2 0，在密封材1 〇 7內側區域被 形成由遮光材‘料所構成的框緣1 0 8，其內側成爲影像顯示 區域10a。在對向基板20，在與元件基板之畫素電極 7a的縱橫之邊界區域對向的區域亦有被形成稱爲黑矩 陣’或者黑條紋等之遮光膜23。 本型態之液晶裝置100，使液晶50以FFS模式驅 動。因此，於元件基板10上，除了畫素電極7a以外’也 被形成後述之共通電極（於圖1(b)未圖示），於對向基板 20未被形成對向電極。 (液晶裝置100之詳細構成） -10- 200905338 參照圖2’說明適用本發明之液晶裝置1〇〇以及使用 於其之元件基板的構成。圖2係顯示使用於適用本發明之 液晶裝置1 〇 0的兀件基板1 〇的影像顯示區域丨〇 a之電氣 構成之等價電路圖。 如圖2所示’於液晶裝置丨〇〇的影像顯示區域1 〇a， 複數畫素l〇〇a被形成爲矩陣狀。於複數之畫素1〇〇a的各 個，被形成畫素電極7a、及供控制畫素電極7a之用的畫 素開關用薄膜電晶體3 0 ’將資料訊號（影像訊號）依照 線順序供給的資料線5a被導電連接於薄膜電晶體30之源 極。於薄膜電晶體3 0之閘極有掃描線3 a被導電連接，以 特定的計時，對掃描線3 a將掃描訊號以線依序地施加而 構成。畫素電極7a，被導電連接於薄膜電晶體3 0之汲 極，藉由使薄膜電晶體3 0僅一定期間成爲打開狀態，而 使從資料線5a供給的資料訊號以特定的計時寫入各畫素 100a。如此進行透過畫素電極7a，被寫入圖1(b)所示之 液晶5 0的特定位準的影像訊號，在與被形成於元件基板 1 〇之共通電極9a之間保持一定期間。此處，畫素電極7a 與共通電極9a之間被形成保持電容60，畫素電極7a之 電壓，例如被保持比源極電壓被施加的時間更長上千倍 (3個數量級）的時間。藉此’電荷的保持特性被改善’ 可以實現可進行高對比的顯示之液晶裝置1 0 0。 在圖2，顯示爲共通電極9a由掃描線驅動電路1〇4 延伸的配線那樣，但被形成於冗件基板1 〇的影像顯不區 域1 0 a之約略全面，被保持於特定的電位。 -11 - 200905338 (各畫素之詳細構成） 圖3(a)、圖3(b)各係適用本發明之液晶裝置100的1 個畫素份之剖面圖’及於元件基板1 〇相鄰接的畫素之平 面圖，圖3 (a)係在相當於圖3 (b)的A - A ’線的位置切斷液 晶裝置1 〇 〇時之剖面圖。此外，在圖3 (b )，畫素電極7 a 顯示爲長的虛線，資料線5 a以及與其同時被形成的薄膜 係以單點虛線顯示’掃描線3 a係以雙點虛線表示，於共 通電極9a部分被除去的部分以實線表示。又，於圖3(a) 針對對向基板20，省略遮光膜23以及彩色濾光片之圖 不。 如圖3(a)、圖3(b)所示，於元件基板10上，複數之 透明的畫素電極7a (以長的虛線包圍的區域）矩陣狀地 被形成於各畫素1 〇〇a，沿著畫素電極7a的縱橫之邊界區 域形成資料線 5 a (單點虛線）及掃描線3 a (二點虛 線）。此外，於元件基板1 0之影像顯示區域1 〇a之約略 全面被形成由ITO膜所構成之共通電極9a。於本型態， 共通電極9a被形成爲覆（貼）滿狀，另一方面，於畫素 電極被形成複數狹縫狀的間隙部7b (以長虛線顯示）， 於間隙部7b共通電極9a重疊於畫素電極7a。於本型 態，複數之間隙部7b，被形成爲斜向於掃描線3 a的延伸 方向，與複數之間隙部7b彼此平行延伸。 圖3(a)所示之元件基板10之基體’係由石英基板或 耐熱性的玻璃基板等透明基板1 〇b所構成’對向基板20 -12- 200905338 之基體，係由石英基板或耐熱性的玻璃基板等 2 0b所構成。在本型態，透明基板1 Ob、20b之 用玻璃基板。在對向基板20，其全面被形成配fi 但與TN模式之液晶裝置不同，未被形成對向電彳 再度於圖3(a)、圖3(b)，於元件基板10, 板l〇b的表面被形成由矽之氧化膜所構成的下 (未圖示），同時於其表面側，在鄰接於各畫5 的位置被形成頂閘極構造之薄膜電晶體30。如 圖3(b)所示，薄膜電晶體30，亦有以對島狀的 la，具備被形成通道形成區域lb、源極區域lc 域1 d的構造，以在通道形成區域1 b的兩側具備 域的LDD ( Lightly Doped Drain )構造的方式被 本型態，半導體膜1 a，在對元件基板1 〇形成非 後，藉由雷射退火或燈退火等而被多結晶化爲多 於半導體膜1 a之上層，被形成矽之氧化膜 化膜、或者是這些之層積膜所構成的閘極絕緣膜 極絕緣膜2之上層，掃描線3 a之一部份與閘 疊。在本型態，半導體膜la折曲爲门字形，具 極於通道方向被形成於2個處所之雙閘極構造。 於閘極電極（掃描線3 a )之上層被形成由 膜、矽之氮化膜、或者這些之層積膜所構成的層 4。於層間絕緣膜4的表面被形成資料線5a， 5 a，透過被形成於層間絕緣膜4的接觸孔4a電 位在最靠資料線5 a側之源極區域。此外’於層 透明基板 任一均使 封膜26 ’ 亟。 在透明基 底保護膜 S電極7 a H 3(a) ' 半導體膜 、汲極區 低濃度區 形成。於 晶矽膜之 晶矽膜。 、矽之氮 2，於閘 極電極重 有閘極電 矽之氧化 間絕緣膜 此資料線 氣連接於 間絕緣膜 -13- 200905338 4的表面被形成汲極電極5 b，汲極電極5 b係與資料線5 a 同時形成的導電膜。汲極電極5 b，介由被形成於層間絕 緣膜4的接觸孔4b，被電氣連接於汲極區域Id。 於資料線5 a及汲極電極5 b之上層側，被形成層間絕 緣膜6。於本型態，層間絕緣膜6，係作爲由厚度1 .5 μιη 〜2.Ομιη之厚的感光性樹脂所構成平坦化膜（有機平坦化 膜）而被形成的。 於層間絕緣膜6的表面，跨其全面藉由貼滿的ΙΤΟ膜 形成作爲下層側電極層之共通電極9a。於共通電極97a 的表面，被形成電極間絕緣膜8。於本型態，電極間絕緣 膜8，係由膜厚400nm以下的矽之氧化膜或者矽之氮化膜 所構成。 於電極間絕緣膜8的上層，藉由ITO膜形成作爲上層 側電極層之畫素電極7a，於畫素電極7a的表面側被形成 配向膜1 6。於畫素電極7 a，被形成前述之狹縫狀的間隙 部7b。在如此構成之狀態，共通電極9a與畫素電極7a 係中介著電極間絕緣膜8而對向，形成以電極間絕緣膜8 爲介電質膜的保持電容60。 此處，畫素電極7 a，介由被形成於層間絕緣膜6的 接觸孔6a，被電氣連接於汲極電極6b。因此，於共通電 極9 a，在被形成接觸孔6 a的部分被形成矩形的缺口 9 d。 在如此構成的液晶裝置1，藉由被形成於畫素電極7a 與共通電極9 a之間的橫電場，可以在狹縫狀間隙部7 b以 及其周邊驅動液晶5 0，可以顯示影像。 -14- 200905338 (電極層之構成，及本型態之主要效果） 使用這樣的構成之元件基板1 0製造液晶裝置1時， 如圖4所示，於畫素電極7a的表面側形成由聚醯亞胺樹 脂等所構成的配向膜1 6之後，使用摩擦輥40等擦過配向 膜1 6的表面進行摩擦處理，控制未施加電場的狀態之液 晶分子的配向。要使這樣的磨擦處理在配向膜1 6的表面 全體均勻地進行，配向膜1 6的表面最好爲平坦的，所以 針對層間絕緣膜6使用有機平坦化膜。 此處，作爲下層側電極層之共通電極9a，係由膜厚 50nm〜200nm之ITO膜作爲貼滿之電極層而被形成，作 爲上層側電極層之畫素電極7a，係由膜厚30nm〜100nm 之ITO膜作爲具有狹縫狀的間隙部7b之電極層而被構 成，共通電極9a的膜厚與畫素電極7a的膜厚有以下之關 係：「畫素電極7a (上層側電極層）< 共通電極9a (下 層側電極層）」。亦即，與被形成爲貼滿的共通電極9a 比較，被形成狹縫狀的間隙部7b的畫素電極7a的膜厚較 薄。 亦即，進行摩擦處理時，於畫素電極7a之間隙部7b 的內側’在對畫素電極7a之摩擦輥的行進方向側，有著 由於起因於畫素電極7a的厚度之階差而會在陰影部分產 生摩擦不良1 6a之虞，但在本型態，狹縫狀的間隙部7b 被形成的畫素電極7a的膜厚較薄。因此，即使摩擦不良 16a產生的場合’也僅發生在極爲狹窄的區域。因此，不 -15- 200905338 會產生對比的降低等，可以提高顯示影像的品質。 此外，於本型態，使畫素電極7a的膜厚薄化之部分 可以使共通電極9a之膜厚增厚。因此，畫素電極7a及共 通電極9a之作爲整體的電阻可以被維持於低的程度。特 別是因爲共通電極9a係跨複數個畫素而被形成，所以電 阻容易成爲問題，但在本型態，因爲增厚共通電極9a的 膜厚，所以共通電極9 a的電阻比從前更低。因此，可以 確實防止影像內的亮度不均之產生。 在本實施型態，爲了防止起因於使畫素電極7a薄化 之影像的亮度不均，而使共通電極的厚度增加，使畫素電 極7a與共通電極9a之合計電阻不要增大。於本實施型 態，畫素電極 7a、共通電極9a都使用ITO膜，但除了 ITO膜以外，也可以把IZO等透明導電膜作爲畫素電極 7a、共通電極9a來使用。此外，畫素電極7a、共通電極 9a也可以使用種種不同的材料所構成的導電膜。在此場 合，藉由選擇在畫素電極7a及共通電極9a所分別使用的 材料的比電阻率之差的絕對値在 5χ1 0Ε-4Ω· cm以下的材 料，可以把電阻之合計値調成理想値，而且實現「畫素電 極7a的膜厚 < 共通電極9a」之構成。 〔第2實施型態〕 圖5(a)、圖5(b)各係本發明之實施型態2的液晶裝置 1 〇 〇的1個畫素份之剖面圖，及於元件基板1 〇相鄰接的 畫素之平面圖，圖5(a)係在相當於圖3(b)的B-B’線的位 -16- 200905338 置切斷液晶裝置1 〇 〇時之剖面圖。又，本型態之基本構 成，與第1實施型態同樣，所以共通部分賦予同一符號而 省略其說明。 如圖5 (b)所示，於元件基板1 0上，複數之透明的畫 素電極7a (以長的虛線包圍的區域）矩陣狀地被形成於 各畫素100a，沿著畫素電極7a的縱橫之邊界區域形成資 料線5 a (單點虛線）及掃描線3 a (二點虛線）。此外， 於元件基板1 0之影像顯示區域1 0 a之約略全面被形成由 IT 0膜所構成之共通電極9 a。於本型態，畫素電極被形成 爲貼滿，另一方面於共通電極9a，狹縫狀的間隙部9b， 被形成爲斜向於掃描線3 a的延伸方向，與複數之狹縫狀 的間隙部9 b彼此平行延伸。 如圖5(a)、圖5(b)所示，在元件基板10元件基板5 上’以由有機平坦化膜所構成的層間絕緣膜6覆蓋薄膜電 晶體3 0之上層側，於層間絕緣膜6之表面，有作爲下層 側電極層之畫素電極7a藉由ITO膜被形成爲貼滿。此 外，於畫素電極7a的表面，被形成電極間絕緣膜8。 於電極間絕緣膜8的上層，藉由ITO膜形成作爲上層 側電極層之共通電極9a，於共通電極9a，被形成前述之 狹縫狀間隙部9 b。於狹縫狀之間隙部9 b，畫素電極7 a不 重疊於共通電極9a。於畫素內，狹縫狀的間隙部9b所佔 的比率爲20%〜60%。 使用這樣的構成之元件基板1 0製造液晶裝置1時， 與參照圖4所說明的構成約略相同，於共通電極9a的表 -17- 200905338 面側形成由聚醯亞胺樹脂等所構成的配向膜1 6之 用摩擦輥40等擦過配向膜16的表面進行摩擦處理 未施加電場的狀態之液晶分子的配向。要使這樣的 理在配向膜16的表面全體均勻地進行，配向膜16 最好爲平坦的，所以針對層間絕緣膜6使用有機 膜。 此處，作爲下層側電極層之畫素電極 7 a，係 50nm〜200nm之ITO膜作爲覆滿之電極層而被形 爲上層側電極層之共通電極9a，係由膜厚30 nm〜 之ITO膜作爲具有狹縫狀的間隙部7b之電極層 成，共通電極9a的膜厚與畫素電極7a的膜厚有以 係：「共通電極9 a (上層側電極層）< 畫素電極 層側電極層）」。亦即，與被形成爲貼滿的畫素調 比較，被形成狹縫狀的間隙部9 b的共通電極9 a的 薄。 亦即，進行摩擦處理時，於共通電極9a之狹 間隙部9b的內側，在對共通電極9a之摩擦輥40 方向側，有著由於起因於共通電極9 a的厚度之階 產生摩擦不良16a之虞，但在本型態，狹縫狀的 9b被形成的共通電極9a的膜厚較薄。因此，即使 良16a產生的場合，也僅發生在極爲狹窄的區域。 不會產生對比的降低等，可以提高顯示影像的品質 此外，於本型態，使共通電極9 a的膜厚薄化 可以使畫素電極7a之膜厚增厚。因此，畫素電極. 後，使 ，控制 磨擦處 的表面 平坦化 由膜厚 成，作 1 OOnm 而被構 下之關 7a (下 【極 7 a 膜厚較 縫狀的 的行進 差而會 間隙部 摩擦不 因此， 〇 之部分 7a及共 -18- 200905338 通電極9a之作爲整體的電阻可以被維持於低的程度。 在本實施型態，爲了防止起因於使畫素電極7a薄化 之影像的亮度不均，而使共通電極的厚度增加，使畫素電 極7a與共通電極9a之合計電阻不要增大。於本實施型 態，畫素電極7a、共通電極9a都使用ITO膜，但除了 ITO膜以外，也可以把IZO等透明導電膜作爲畫素電極 7a、共通電極9a來使用。此外，畫素電極7a、共通電極 9a也可以使用種種不同的材料所構成的導電膜。在此場 合，藉由選擇在畫素電極7a及共通電極9a所分別使用的 材料的比電阻率之差在 5 X 1 0 E - 4 Ω · c m以下的材料，可以 把電阻之合計値調成理想値，而且實現「畫素電極7 a的 膜厚 < 共通電極9a」之構成。 〔其他實施型態〕 又，在實施型態1、實施型態2，於形成間隙部時， 係形成狹縫狀的開口部，但在使畫素電極成爲梳齒形狀， 或魚骨形狀而設置間隙部的液晶裝置也可以適用本發明。 此外，在實施型態1、實施型態2，係作爲半導體膜 使用多晶矽膜之例，但亦可於使用非晶矽膜或單晶矽層的 元件基板1 〇適用本發明。此外，亦可將本發明適用於作 爲畫素開關元件使用薄膜二極體元件（非線性元件）之液 晶裝置。 (對電子機器之搭載例） -19- 200905338 其次，說明適用相關於前述實施型態之液晶裝 的電子機器。圖6(a)係顯示具備液晶裝置100之可 人電腦的構成。個人電腦2000，具備作爲顯示單 晶裝置1〇〇與本體部2010。於本體部2010，設有 關200 1及鍵盤2002。圖6(b)係顯示具備液晶裝置 行動電話的構成。行動電話機3000，具備複數操 3001以及捲動按鈕3002、以及作爲顯示單元之液 1 0 0。藉由操作捲動按鈕3 0 0 2，可以使顯示於液 100的畫面捲動。圖6(C)係顯示適用液晶裝置1〇〇 資訊終端（PDA: Personal Digital Assistants)的 可攜資訊終端4000，具備複數操作按鍵4〇(n以及 關4 002、以及作爲顯示單元之液晶裝置100。操作 關4002時’通訊錄或行程表等各種資訊被顯示於 置 1 0 0。 又，作爲液晶裝置1 0 0被適用之電子機器，除 所示者以外’還可以舉出數位相機、液晶電視、 型、螢幕直視型之攝影機、汽車導航裝置、呼叫器 手冊、計算機、文書處理機、工作站、電視電話' 端、具備觸控面板的機器等。接著，作爲這些各種 器之顯示部，前述之液晶裝置100可以適用。 【圖式簡單說明】 圖1 (a)、（b)分別係適用本發明之液晶裝置與 於其上的各構成要素一起由對向基板之側所見的平 置 100 攜型個 元之液 電源開 100之 作按鍵 晶裝置 晶裝置 之可攜 構成。 電源開 電源開 液晶裝 了圖6 觀景窗 、電子 POS終 電子機 被形成 面圖， -20- 200905338 以及其Η - Η ’剖面圖。 圖2係顯示使用於適用本發明之液晶裝置的元件基板 的影像顯示區域之電氣構成之等價電路圖。 圖3 (a)、（b)分別係相關於本發明之實施型態1之液 晶裝置的1畫素份之平面圖，及於元件基板相鄰接的畫素 之平面圖。 圖4係顯示製造適用本發明之液晶裝置時之摩擦處理 的樣子之說明圖。 圖5(a)、（b)分別係相關於本發明之實施型態2之液 晶裝置的1畫素份之平面圖，及於元件基板相鄰接的畫素 之平面圖。 圖6係使用相關於本發明之液晶裝置的電子機器之說 明圖。 圖7係顯示從前之液晶裝置之1個畫素份的剖面圖， 及製造此液晶裝置時之摩擦處理的樣子之說明圖。 【主要元件符號說明】 1 a :半導體膜 3 a .掃描線 4 :層間絕緣膜 6 :作爲有機平坦化膜之層間絕緣膜 6a :接觸孔 5a :資料線 5 b :汲極電極 -21 - 200905338 7 a :畫素電極 7b :畫素電極之狹縫狀的間隙部 8 :電極間絕緣膜 9a :共通電極 9b :狹縫狀的間隙部 1 〇 :元件基板 2 0 :對向基板 3 0 :作爲畫素開關元件之薄膜電晶體 5 〇 :液晶 6 0 :保持電容 1 〇 〇 :液晶裝置 1 〇〇a :畫素 -22-200905338 IX. Description of the Invention [Technical Field] The present invention relates to a liquid crystal device, and more particularly to an element substrate typified by a liquid crystal device of a so-called fringe field switch (hereinafter referred to as FFS (Fringe Field Switching) mode). It is suitably applied to a technique of a liquid crystal device having both a pixel electrode and a common electrode. Further, it relates to a method of manufacturing the liquid crystal device, and an electronic device to which the liquid crystal device is applied. [Prior Art] Among the liquid crystal devices, the FF S mode liquid crystal device is formed on the element substrate and the target substrate, and the element substrate is laminated with a pixel electrode, an interelectrode insulating film, and a common electrode in which a gap portion is formed. The liquid crystal is driven by an electric field applied to the pixel electrode and the common electrode (see Patent Document 1). [Patent Document 1] Japanese Patent Laid-Open Publication No. JP-A No. 2001-235 In the case of the thin film transistor of the bottom gate structure, when the gate electrode of the thin film transistor directly forms the halogen electrode in an overlapping manner, 'because the pixel electrode is formed as the same layer as the data line, it is necessary to make the pixel When the electrode leaves the data line, there is a problem that the formation area of the pixel electrode is narrow. Here, the inventors of the present invention have proposed that the interlayer insulating film 6 is formed in a manner of covering the thin film transistor 30 as a pixel switching element as shown in FIG. 7(a), and the contact hole penetrating through the interlayer insulating film 6 is formed. 6 a and the drain electrode 5 b are electrically connected to the drain region 1 d of the thin film transistor 30. In the example shown in Fig. 7 (a), in order to compare with the present invention, the inventors of the present invention have sequentially formed the interelectrode insulating film 8 on the upper layer of the pixel electrode 7a, and formed a slit shape. The common electrode 9a of the gap portion 6b and the alignment film 16 are provided. The pixel electrode 7a and the common electrode 9a are each formed of an Indium Tin Oxide film having the same thickness of 100 nm to 200 nm. According to this configuration, the pixel electrode 7a can be formed to a position close to the data line 5a, and has an advantage that the formation region of the pixel electrode 7a can be enlarged. When the liquid crystal device is manufactured using the element substrate 1 having such a configuration, as shown in FIG. 7(b), after the alignment film 16 made of a polyimide resin or the like is formed on the surface side of the common electrode 9a, the rubbing roller 40 is used. The surface of the alignment film 16 is rubbed and rubbed to control the alignment of the liquid crystal molecules in a state where no electric field is applied. The rubbing treatment is preferably performed uniformly on the entire surface of the alignment film 16. The surface of the alignment film 16 is preferably flat. Therefore, it is preferable to use an organic planarizing film for the interlayer insulating film 6. However, when the frictional treatment is performed on the configuration shown in FIGS. 7(a) and 7(b), the common electrode 9a is on the inner side of the gap portion 9b of the common electrode 9a on the side of the direction in which the friction roller is moved. There is a problem that a problem occurs due to a large step difference in the thickness of the common electrode 9a, and such a problem that the defect occurs over a wide range is caused by such a frictional failure of 16 a, which causes a decrease in the quality of the display image due to a decrease in contrast. . In this way, when the thickness of the common electrode 9 and the -5 - 200905338 element electrode 7a is made thinner, the electric resistance of the common electrode 9a increases, and the related electric resistance increases, which causes uneven brightness in the image. . In addition to the frictional failure described above, when the thickness of the common electrode 9a is too large, 'the alignment difference itself may cause alignment failure, or the region in which the common electrode 9a in the pixel is formed, and the liquid crystal in the slit-like gap portion gb. The thickness of the layer changes to reduce the contrast of the display. The above-mentioned problem is not limited to the case where the common electrode 9a is formed on the interelectrode insulating film 8. The case where the pixel electrode is formed on the interelectrode insulating film 8 is also generated. In view of the above problems, an object of the present invention is to provide a liquid crystal device capable of suppressing occurrence of display defects caused by the thickness of an electrode formed on the interelectrode insulating film 8 without increasing the electric resistance of the electrode layer. [Means for Solving the Problems] In order to solve the above-mentioned problems, a liquid crystal device according to the present invention is configured to include a plurality of pixels, and a liquid crystal device including a switching element in each of the pixels, and is characterized in that: An element substrate formed by forming the switching element, an interlayer insulating film formed on the switching element, a first electrode layer formed on the interlayer insulating film, and a device layer formed on the element substrate, and interposed between the electrodes a second electrode layer that overlaps the first electrode plane with an insulating film; each of the pixels includes a first region in which the first electrode layer and the second electrode layer are planarly overlapped, and the first electrode layer and the second electrode Among the electrode layers, only the second region in which the first electrode layer is formed, the film thickness of the second electrode layer is thinner than the film thickness of the first electrode layer, -6 to 200905338. Next, the element substrate is subjected to alignment treatment. As an example of the alignment treatment, an alignment film made of a polyimide resin or the like is formed on the second electrode layer, and then rubbed against the surface of the alignment film by a rubbing roller to perform a rubbing treatment. According to the invention, a step is formed in the alignment film at the boundary between the first region and the second region. However, since the thickness of the second electrode layer is set to be thinner than that of the first electrode layer, the second electrode layer is caused by the second electrode layer. The step of the thickness is very low, and the occurrence of frictional defects can be prevented, and even in the case where the friction is bad, the area is extremely narrow. Therefore, it is possible to prevent a decrease in contrast due to poor friction. The effect of the present invention is most remarkable in the case of performing the above-described rubbing treatment, but in other alignment processing methods, for example, a method of irradiating light to a photosensitive polymer film from an oblique direction or an alignment treatment of an obliquely vapor-deposited film The method and the like also suppress the misalignment of the liquid crystal by suppressing the step formed on the element substrate to be low. In the present invention, the film thickness balance between the first electrode layer and the second electrode layer is optimized, and the thickness of both the first electrode layer and the second electrode layer is not reduced. The resistance of the entire electrode assembly and the second electrode layer. That is, uneven brightness and the like do not occur in the image. Thus, according to the present invention, it is possible to display an image of high quality. In the present invention, either one of the first electrode layer and the second electrode layer may be connected to the pixel electrode of the switching element, and the other may be a common electrode formed by the plurality of pixels. In particular, the first electrode layer is the common electrode, and the second electrode layer is preferably a pixel electrode. In order to increase the thickness of the common electrode, the increase in the resistance of the common electrode which is easily noticeable in brightness unevenness can be reduced, so that uneven brightness does not occur in the image. According to the invention, the second region is constituted by an opening or a slit provided in the second electrical layer. In the present invention, the interlayer insulating film is a flat film comprising an organic substance. According to this configuration, since the surface of the alignment film becomes flat, the rubbing treatment can be performed uniformly and uniformly. In the present invention, the specific electrical resistivity of the materials constituting the first electrode layer and the second electrode layer is substantially equal. In the present invention, since the thickness of the first electrode layer is made thinner by the thickness of the second electrode layer, the step difference due to the thickness of the second electrode is reduced, and the increase in resistance as the entire electrode layer is prevented. In other words, the effect of the present invention is remarkable when the specific resistivity of the first electrode layer is similar to the specific resistivity of the second electrode layer. Most preferably, the second electrical layer is formed of the same material together with the second electrode layer. When the second electrode layer of the first electrode layer is formed of a different material, the difference between the specific resistivity of the first electrode layer and the specific resistivity of the second electrode layer is 5 χ 1 〇 ε - 4 Ω. The electrode thickness and resistance adjustment of the electrode are effective. As a specific combination of the first electrode layer or the second electrode layer, examples thereof include ITO, ζ ζ Ζ, ΖηΟ, Ιη2〇3-ΖηΟ, and the like. In the method of manufacturing a liquid crystal device of the present invention, a method of manufacturing a liquid crystal device having a plurality of elements and forming a switching element corresponding to each of the pixels is provided, which is characterized in that the switching element is formed before the element substrate is formed. a step of forming an interlayer insulating film on the switching element, and forming a first electrode layer on the interlayer insulating film by using a near-pole and a cm as in the drawing step -8 - 200905338 And a step of forming a second electrode layer that overlaps the first electrical surface via an inter-electrode insulating film; and forming the second electrode layer to form an opening in the second electrode layer or The second electrode layer is a slit and the film thickness of the electrode layer is thinner than the film thickness of the first electrode layer. Preferably, the method for producing a liquid crystal device according to BII further includes a step of forming an alignment film on the second electrode and a step of rubbing the above-mentioned alignment. The liquid crystal device to which the present invention is applied is used as a display portion of a mobile phone or a portable electronic device. [Embodiment] Hereinafter, embodiments of the present invention will be described. In the following, in order to facilitate understanding of the correspondence relationship with the configuration shown in Fig. 75, the same reference numerals will be given to the same components. Further, in each of the drawings referred to by the description, in order to make each layer or each member a recognizable size on the drawing, the scale of each layer or each member is different, and the drawings of the color filter or the like are not omitted. [Embodiment 1] (Embedded configuration) Each of the constituent elements on which the liquid crystal device to which the present invention is applied is applied together from the side of the counter substrate, as shown in Fig. 1 (a) and Fig. 1 (b). The second step is formed in the forward film and the brain, and there are a total of the following. This is a flat view of the -9-200905338, and its Η-Η' section. In FIG. 1(a) and FIG. 1(b), a liquid crystal device 1 of the present type is a transmission type active matrix liquid crystal device, and on the element substrate 10, the sealing material 107 is along the opposite substrate 20. The way the edges are set. In the region of the element substrate 10 outside the sealing material 110, the data line driving circuit 1 〇1 and the mounting terminal 1 〇2 are disposed along one side of the element substrate 10, along the adjacent terminal 1 The scanning line driving circuit 104 is formed on the two sides of the 0 2 side. Further, it is also possible to provide a peripheral circuit such as a precharge circuit or an inspection circuit by using the frame edge 1 0 8 or the like. The counter substrate 20 has almost the same contour as the sealing material 107, whereby the sealing material 107 is fixed to the element substrate 10 by the counter substrate 20. Next, the liquid crystal 50 is held between the element substrate 1A and the counter substrate 20. As will be described later, in the element substrate 1 画, the pixel electrodes 7a are formed in a matrix shape. On the other hand, in the opposite substrate 20, the frame edge 1 0 8 formed of the light-shielding material is formed in the inner region of the sealing material 1 〇 7, and the inside thereof becomes the image display region 10a. In the counter substrate 20, a light-shielding film 23 called a black matrix or black stripes is formed in a region opposed to a boundary region between the longitudinal and lateral directions of the pixel electrode 7a of the element substrate. In the liquid crystal device 100 of this type, the liquid crystal 50 is driven in the FFS mode. Therefore, a common electrode (not shown in Fig. 1(b)) which is described later is formed on the element substrate 10 except for the pixel electrode 7a, and the counter electrode is not formed on the counter substrate 20. (Detailed Configuration of Liquid Crystal Device 100) -10-200905338 A configuration of a liquid crystal device 1A to which the present invention is applied and an element substrate used therefor will be described with reference to Fig. 2'. Fig. 2 is an equivalent circuit diagram showing the electrical configuration of the image display area 丨〇 a of the element substrate 1 使用 used in the liquid crystal device 1 〇 0 to which the present invention is applied. As shown in Fig. 2, in the image display area 1 〇a of the liquid crystal device ,, the plurality of pixels l〇〇a are formed in a matrix. Each of the plurality of pixels 1a is formed with a pixel electrode 7a and a thin film transistor 3 0' for a pixel switch for controlling the pixel electrode 7a. The data signal (image signal) is supplied in line order. The data line 5a is electrically connected to the source of the thin film transistor 30. The scan line 3a is electrically connected to the gate of the thin film transistor 30, and is formed by sequentially applying the scan signals to the scan lines 3a in a specific timing. The pixel electrode 7a is electrically connected to the drain of the thin film transistor 30, and the thin film transistor 30 is turned on for a certain period of time, so that the data signal supplied from the data line 5a is written in a specific timing. Picture 100a. In this manner, the image signal transmitted through the pixel electrode 7a at a specific level of the liquid crystal 50 shown in Fig. 1(b) is held for a predetermined period of time between the common electrode 9a formed on the element substrate 1A. Here, a holding capacitor 60 is formed between the pixel electrode 7a and the common electrode 9a, and the voltage of the pixel electrode 7a is held, for example, for a time longer than a time (three orders of magnitude) longer than the time when the source voltage is applied. Thereby, the 'retention characteristics of the electric charge are improved', and the liquid crystal device 100 which can perform display with high contrast can be realized. In Fig. 2, the common electrode 9a is shown as a wiring extending from the scanning line driving circuit 1?4. However, the image display area 10a formed on the redundant substrate 1 is approximately completely integrated and held at a specific potential. -11 - 200905338 (Detailed configuration of each pixel) Fig. 3(a) and Fig. 3(b) are cross-sectional views of one pixel component of the liquid crystal device 100 of the present invention, and adjacent to the element substrate 1 A plan view of the connected pixels, Fig. 3 (a) is a cross-sectional view when the liquid crystal device 1 is cut at a position corresponding to the line A - A ' in Fig. 3 (b). Further, in FIG. 3(b), the pixel electrode 7a is shown as a long broken line, and the data line 5a and the film formed therewith are shown by a single dotted line. 'Scanning line 3a is indicated by a double dotted line. A portion where the common electrode 9a is partially removed is indicated by a solid line. Further, in Fig. 3(a), the light shielding film 23 and the color filter are omitted for the counter substrate 20. As shown in FIGS. 3(a) and 3(b), on the element substrate 10, a plurality of transparent pixel electrodes 7a (areas surrounded by long broken lines) are formed in a matrix form on each pixel 1 〇〇 a, a data line 5a (single-dotted line) and a scanning line 3a (two-dotted line) are formed along the boundary area of the vertical and horizontal directions of the pixel electrode 7a. Further, the common electrode 9a composed of an ITO film is formed substantially entirely on the image display region 1a of the element substrate 10. In the present embodiment, the common electrode 9a is formed to be covered (posted), and the pixel electrode is formed with a plurality of slit-shaped gap portions 7b (shown by long dashed lines), and the common electrode 9a is formed in the gap portion 7b. Overlaid on the pixel electrode 7a. In the present embodiment, the plurality of gap portions 7b are formed obliquely to the extending direction of the scanning line 3a, and the plurality of gap portions 7b extend in parallel with each other. The base body ' of the element substrate 10 shown in Fig. 3 (a) is a base body of the opposite substrate 20 -12 - 200905338 composed of a transparent substrate 1 〇 b such as a quartz substrate or a heat-resistant glass substrate, and is made of a quartz substrate or heat-resistant. The glass substrate is made of 20b. In this form, a glass substrate for the transparent substrates 1 Ob and 20b is used. In the opposite substrate 20, which is formed entirely in the same manner as the liquid crystal device of the TN mode, the opposite electrode is not formed again in FIGS. 3(a) and 3(b), on the element substrate 10, the plate 10〇 The surface of b is formed by a lower portion (not shown) composed of an oxide film of tantalum, and a thin film transistor 30 of a top gate structure is formed on the surface side thereof at a position adjacent to each of the patterns 5. As shown in FIG. 3(b), the thin film transistor 30 has a structure in which an island-shaped la is provided with a channel formation region lb and a source region lc region 1d, so as to be in the channel formation region 1b. The mode of the LDD (Lightly Doped Drain) structure having the domain is in the present mode, and the semiconductor film 1 a is polycrystallized more than by the laser annealing or lamp annealing after forming the device substrate 1 a. The upper layer of the semiconductor film 1a is formed of an oxide film of germanium or an upper layer of the gate insulating film insulating film 2 composed of the laminated films, and a portion of the scanning line 3a is overlapped with the gate. In the present mode, the semiconductor film 1a is bent into a gate shape, and has a double gate structure which is formed in two places in the channel direction. A layer 4 made of a film, a nitride film of germanium, or a laminated film of these is formed on the gate electrode (scanning line 3 a ). The data lines 5a, 5a are formed on the surface of the interlayer insulating film 4, and are transmitted through the contact holes 4a formed in the interlayer insulating film 4 to the source region on the side closest to the data line 5a. Further, the sealing film 26' is 亟 any of the layers of the transparent substrate. The transparent substrate protective film S electrode 7 a H 3(a) ' semiconductor film, the drain region is formed in a low concentration region. The wafer film on the wafer film. Nitrogen 2, an inter-oxidation insulating film with a gate electrode at the gate electrode. This data line is connected to the interlayer insulating film-13-200905338. The surface of the electrode is formed with a drain electrode 5b and a drain electrode 5b. A conductive film formed simultaneously with the data line 5a. The drain electrode 5b is electrically connected to the drain region Id via a contact hole 4b formed in the interlayer insulating film 4. An interlayer insulating film 6 is formed on the upper side of the data line 5a and the drain electrode 5b. In the present embodiment, the interlayer insulating film 6 is formed as a planarizing film (organic planarizing film) composed of a photosensitive resin having a thickness of 1.5 μm to 2. Ομηη. On the surface of the interlayer insulating film 6, a common electrode 9a as a lower layer side electrode layer is formed over the entire surface by a covered ruthenium film. An interelectrode insulating film 8 is formed on the surface of the common electrode 97a. In the present embodiment, the interelectrode insulating film 8 is composed of an oxide film of tantalum having a thickness of 400 nm or less or a nitride film of tantalum. In the upper layer of the interelectrode insulating film 8, a pixel electrode 7a as an upper layer side electrode layer is formed by an ITO film, and an alignment film 16 is formed on the surface side of the pixel electrode 7a. The above-described slit-shaped gap portion 7b is formed in the pixel electrode 7a. In the state of the configuration, the common electrode 9a and the pixel electrode 7a are opposed to each other via the inter-electrode insulating film 8, and the storage capacitor 60 having the inter-electrode insulating film 8 as a dielectric film is formed. Here, the pixel electrode 7a is electrically connected to the drain electrode 6b via the contact hole 6a formed in the interlayer insulating film 6. Therefore, a rectangular notch 9d is formed in the portion where the contact hole 6a is formed at the common electrode 9a. In the liquid crystal device 1 configured as described above, the liquid crystal 50 can be driven in the slit-like gap portion 7b and its periphery by the lateral electric field formed between the pixel electrode 7a and the common electrode 9a, and the image can be displayed. -14-200905338 (Structure of Electrode Layer and Main Effect of Present Type) When the liquid crystal device 1 is manufactured by using the element substrate 10 having such a configuration, as shown in Fig. 4, the surface of the pixel electrode 7a is formed by polymerization. After the alignment film 16 composed of the quinone imine resin or the like, the surface of the alignment film 16 is rubbed with a rubbing roller 40 or the like to perform rubbing treatment, and the alignment of the liquid crystal molecules in a state where no electric field is applied is controlled. When such a rubbing treatment is uniformly performed on the entire surface of the alignment film 16 and the surface of the alignment film 16 is preferably flat, an organic planarizing film is used for the interlayer insulating film 6. Here, the common electrode 9a as the lower layer side electrode layer is formed by using an ITO film having a thickness of 50 nm to 200 nm as the electrode layer which is filled, and the pixel electrode 7a as the upper layer side electrode layer is made of a film thickness of 30 nm. The 100 nm ITO film is formed as an electrode layer having a slit-like gap portion 7b. The film thickness of the common electrode 9a and the film thickness of the pixel electrode 7a have the following relationship: "pixel element 7a (upper layer side electrode layer) < Common electrode 9a (lower side electrode layer)". In other words, the thickness of the pixel electrode 7a in which the slit-shaped gap portion 7b is formed is thinner than the common electrode 9a formed to be thick. In other words, when the rubbing treatment is performed, the inner side of the gap portion 7b of the pixel electrode 7a is on the side of the traveling direction of the rubbing roller facing the pixel electrode 7a, and there is a step difference due to the thickness of the pixel electrode 7a. In the shaded portion, the frictional defect 16a is generated. However, in the present embodiment, the thickness of the pixel electrode 7a formed by the slit-like gap portion 7b is thin. Therefore, even in the case where the frictional defect 16a is generated, it occurs only in an extremely narrow region. Therefore, no -15- 200905338 will produce a contrast reduction, etc., which can improve the quality of the displayed image. Further, in the present embodiment, the film thickness of the pixel electrode 7a can be made thicker by increasing the film thickness of the pixel electrode 7a. Therefore, the resistance of the pixel electrode 7a and the common electrode 9a as a whole can be maintained at a low level. In particular, since the common electrode 9a is formed across a plurality of pixels, the resistance is likely to be a problem. However, in the present mode, since the film thickness of the common electrode 9a is increased, the electric resistance of the common electrode 9a is lower than that of the former. Therefore, it is possible to surely prevent uneven brightness in the image. In the present embodiment, in order to prevent unevenness in luminance caused by the thinning of the pixel electrode 7a, the thickness of the common electrode is increased, so that the total resistance of the pixel electrode 7a and the common electrode 9a is not increased. In the present embodiment, the ITO film is used for both the pixel electrode 7a and the common electrode 9a. However, in addition to the ITO film, a transparent conductive film such as IZO may be used as the pixel electrode 7a and the common electrode 9a. Further, the pixel electrode 7a and the common electrode 9a may be formed of a conductive film made of various materials. In this case, by selecting a material having an absolute enthalpy of the difference between the specific resistivities of the materials used for each of the pixel electrode 7a and the common electrode 9a of 5 χ 10 Ε -4 Ω·cm or less, the total of the resistances can be adjusted to an ideal ratio. Further, the configuration of "the film thickness of the pixel electrode 7a < the common electrode 9a" is realized. [Second Embodiment] FIG. 5(a) and FIG. 5(b) are cross-sectional views of one pixel portion of the liquid crystal device 1 according to the second embodiment of the present invention, and the element substrate 1 A plan view of the adjacent pixels, Fig. 5(a) is a cross-sectional view when the liquid crystal device 1 is turned off at a position corresponding to the position -16-200905338 of the line BB' of Fig. 3(b). Incidentally, the basic configuration of the present embodiment is the same as that of the first embodiment, and the same reference numerals are given to the same portions, and the description thereof will be omitted. As shown in FIG. 5(b), on the element substrate 10, a plurality of transparent pixel electrodes 7a (areas surrounded by long broken lines) are formed in a matrix form on each pixel 100a along the pixel electrode 7a. The boundary areas of the vertical and horizontal directions form a data line 5a (single-dotted line) and a scanning line 3a (two-dotted line). Further, the common display electrode 9a composed of the IT 0 film is formed almost entirely on the image display region 10a of the element substrate 10. In the present mode, the pixel electrode is formed to be full, and on the other hand, the slit electrode 9b is formed in the slit-like gap portion 9b obliquely to the extending direction of the scanning line 3a, and the slit shape is plural. The gap portions 9b extend parallel to each other. As shown in FIGS. 5(a) and 5(b), on the element substrate 5 of the element substrate 10, the interlayer insulating film 6 made of an organic planarizing film covers the upper layer side of the thin film transistor 30, and is insulated between layers. On the surface of the film 6, a pixel electrode 7a as a lower layer side electrode layer is formed to be covered by an ITO film. Further, an interelectrode insulating film 8 is formed on the surface of the pixel electrode 7a. In the upper layer of the interelectrode insulating film 8, a common electrode 9a as an upper layer side electrode layer is formed by an ITO film, and the slit-shaped gap portion 9b is formed in the common electrode 9a. In the slit-like gap portion 9b, the pixel electrode 7a does not overlap the common electrode 9a. In the pixel, the slit-like gap portion 9b occupies a ratio of 20% to 60%. When the liquid crystal device 1 is manufactured using the element substrate 10 having such a configuration, the alignment of the surface of the common electrode 9a is formed on the surface side of the table -17-200905338 of the common electrode 9a by a polyimine resin or the like. The film 16 is rubbed against the surface of the alignment film 16 by a rubbing roller 40 or the like to perform rubbing treatment for alignment of liquid crystal molecules in a state where no electric field is applied. In order to make the entire surface of the alignment film 16 uniformly, the alignment film 16 is preferably flat. Therefore, an organic film is used for the interlayer insulating film 6. Here, the pixel electrode 7a as the lower layer side electrode layer is an ITO film of 50 nm to 200 nm as a coated electrode layer and is formed as a common electrode 9a of the upper layer side electrode layer, and is made of ITO having a film thickness of 30 nm to 〜 The film is formed as an electrode layer having a slit-like gap portion 7b, and the film thickness of the common electrode 9a and the film thickness of the pixel electrode 7a are: "common electrode 9a (upper layer side electrode layer) < pixel electrode layer Side electrode layer)". That is, the common electrode 9a of the slit-like gap portion 9b is thinner than the pixel element formed to be covered. In other words, when the rubbing treatment is performed, the inner side of the narrow gap portion 9b of the common electrode 9a has a frictional defect 16a due to the step of the thickness of the common electrode 9a on the side of the rubbing roller 40 of the common electrode 9a. However, in the present mode, the thickness of the common electrode 9a in which the slit-like 9b is formed is thin. Therefore, even in the case where the good 16a is generated, it occurs only in an extremely narrow region. In addition, in the present mode, the film thickness of the common electrode 9a can be made thinner, and the film thickness of the pixel electrode 7a can be increased. Therefore, after the pixel electrode is controlled, the surface of the control friction is flattened by the film thickness, and is made to be cut off by 1 00 nm (the lower layer 7 a film thickness is more stable than the slit-like travel gap). The friction of the portion 7a and the total -18-200905338 through electrode 9a as a whole can be maintained at a low level. In this embodiment, in order to prevent the image caused by the thinning of the pixel electrode 7a The brightness of the common electrode is increased, and the thickness of the common electrode is increased, so that the total resistance of the pixel electrode 7a and the common electrode 9a is not increased. In the present embodiment, the ITO film is used for both the pixel electrode 7a and the common electrode 9a, but In addition to the ITO film, a transparent conductive film such as IZO may be used as the pixel electrode 7a and the common electrode 9a. Further, the pixel electrode 7a and the common electrode 9a may be formed of a conductive film made of various materials. By selecting a material having a difference in specific resistivity between the pixel electrodes 7a and the common electrode 9a of 5 X 1 0 E - 4 Ω · cm or less, the total of the resistances can be adjusted to an ideal value. And real "Thickness of the pixel electrode 7a< common electrode 9a". [Other embodiment] Further, in the first embodiment and the second embodiment, when the gap portion is formed, a slit-like opening is formed. In the liquid crystal device in which the pixel electrode has a comb shape or a fishbone shape and a gap portion is provided, the present invention can also be applied. In the first embodiment and the second embodiment, a polycrystalline germanium film is used as the semiconductor film. For example, the present invention can also be applied to an element substrate 1 using an amorphous tantalum film or a single crystal germanium layer. Further, the present invention can also be applied to a thin film diode element (non-linear element) as a pixel switching element. Liquid crystal device. (Example of mounting on an electronic device) -19- 200905338 Next, an electronic device to which the liquid crystal device of the above-described embodiment is applied will be described. Fig. 6(a) shows a human computer having the liquid crystal device 100. The personal computer 2000 includes a display single crystal device 1 and a main body portion 2010. The main body portion 2010 is provided with a cover 200 1 and a keyboard 2002. Fig. 6(b) shows a configuration including a liquid crystal device mobile phone. The machine 3000 includes a plurality of operations 3001 and a scroll button 3002, and a liquid 100 as a display unit. By operating the scroll button 3 0 0 2, the screen displayed on the liquid 100 can be scrolled. Fig. 6(C) The portable information terminal 4000 for a liquid crystal device (PDA: Personal Digital Assistants) is displayed, and has a plurality of operation buttons 4 (n and off 4 002, and a liquid crystal device 100 as a display unit. Various information such as 'address book or itinerary is displayed at 1 0 0. Further, as an electronic device to which the liquid crystal device 100 is applied, in addition to those shown, a digital camera, a liquid crystal television, a type of direct-view type camera, a car navigation device, a pager manual, a computer, and a word processing can be cited. Machines, workstations, TV phones, mobile phones with touch panels, etc. Next, as the display portion of these various devices, the liquid crystal device 100 described above can be applied. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 (a) and (b) are liquid power sources of a flat-top 100-carrying element which are seen from the side of a counter substrate together with the constituent elements of the present invention, respectively. The portable structure of the crystal device of the key crystal device is 100. The power supply is turned on. The liquid crystal is installed with the view window of Fig. 6, and the electronic POS final electronic machine is formed with a surface view, -20-200905338 and its Η-Η' section. Fig. 2 is an equivalent circuit diagram showing the electrical configuration of an image display region of an element substrate used in a liquid crystal device to which the present invention is applied. Fig. 3 (a) and (b) are plan views of a single pixel portion of a liquid crystal device according to an embodiment 1 of the present invention, and a plan view of a pixel adjacent to the element substrate. Fig. 4 is an explanatory view showing the state of the rubbing treatment when the liquid crystal device of the present invention is applied. Fig. 5 (a) and (b) are plan views of a single pixel portion of a liquid crystal device according to an embodiment 2 of the present invention, and a plan view of a pixel adjacent to the element substrate. Fig. 6 is an explanatory view showing an electronic apparatus using a liquid crystal device according to the present invention. Fig. 7 is a cross-sectional view showing a pixel portion of a liquid crystal device of the prior art, and an explanatory view of a state of rubbing treatment when the liquid crystal device is manufactured. [Description of main component symbols] 1 a : semiconductor film 3 a . scanning line 4 : interlayer insulating film 6 : interlayer insulating film 6 a as an organic planarizing film : contact hole 5 a : data line 5 b : drain electrode 21 - 200905338 7 a : pixel electrode 7 b : slit-shaped gap portion 8 of pixel electrode: inter-electrode insulating film 9 a : common electrode 9 b : slit-shaped gap portion 1 〇 : element substrate 2 0 : opposite substrate 3 0 : Thin film transistor 5 as a pixel switching element: liquid crystal 6 0 : holding capacitor 1 〇〇: liquid crystal device 1 〇〇a : pixel-22-