CN101276103B - Liquid crystal device, method of manufacturing liquid crystal device, and electronic apparatus - Google Patents
Liquid crystal device, method of manufacturing liquid crystal device, and electronic apparatus Download PDFInfo
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- CN101276103B CN101276103B CN2008100885160A CN200810088516A CN101276103B CN 101276103 B CN101276103 B CN 101276103B CN 2008100885160 A CN2008100885160 A CN 2008100885160A CN 200810088516 A CN200810088516 A CN 200810088516A CN 101276103 B CN101276103 B CN 101276103B
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 83
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000010408 film Substances 0.000 claims abstract description 128
- 239000010410 layer Substances 0.000 claims abstract description 117
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 239000011229 interlayer Substances 0.000 claims abstract description 30
- 239000010409 thin film Substances 0.000 claims abstract description 24
- 230000015572 biosynthetic process Effects 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 2
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 239000008393 encapsulating agent Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 239000009719 polyimide resin Substances 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000008719 thickening Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
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- 238000005516 engineering process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
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- 229920002120 photoresistant polymer Polymers 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133357—Planarisation layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
Abstract
The invention relates to a liquid crystal device, a manufacturing method of the liquid crystal device, and an electric device. The invention provides a liquid crystal device capable of inhibiting FFS mode of occurrence of friction disorder without increasing resistance of an electrode layer. On an element substrate (10) of the liquid crystal device (100), an upper layer side of a film transistor (30) is covered by an interlayer insulated film (6) made from an organic flattened film; on the upper layer of the interlayer insulated film (6), a common electrode (9a) is formed as an electrode layer of the whole surface. An inter-electrode insulated film (8) forms on the upper layer of the shared electrode (9a). A pixel electrode (7a) with a gap part (7b) with seam shaped forms on the inter-electrode insulated film (8). Compared to the common electrode (9a) on the whole surface, the pixel electrode (7a) with the gap part (7b) of seam shape has thin film thickness, so that the pixel electrode (7a) is capable of undergoing friction treatment appropriately.
Description
Technical field
The present invention, relate to liquid-crystal apparatus, relate in particular to the technology of liquid-crystal apparatus that is applied to possess the both sides of pixel electrode and common electrode suitably at device substrate by the liquid-crystal apparatus representative of so-called fringe field switching (below, be called FFS (Fringe Field Switching)) pattern.And, relate to the manufacture method of this liquid-crystal apparatus and the electronic equipment that application has liquid-crystal apparatus.
Background technology
The liquid-crystal apparatus of the FFS pattern among the various liquid-crystal apparatus, dielectric film and the common electrode that is formed with clearance portion carry out lamination between the device substrate among device substrate and the subtend substrate is with pixel electrode, electrode, by the electric field that puts on pixel electrode and common electrode liquid crystal are driven (with reference to patent documentation 1).
[patent documentation 1] spy opens the 2001-235763 communique
In the liquid-crystal apparatus of FFS pattern so, as the pixel switch element, the thin film transistor (TFT) of the bottom grating structure of amorphous silicon film has been adopted in utilization, if directly be overlapped in the plain electrode of the drain electrode terrain imaging of this thin film transistor (TFT), then because pixel electrode is formed at and the same interlayer of data line, so pixel electrode is left from data line, have the narrow problem points in formation zone of pixel electrode.
So, the application's applicant, following technology is proposed: as be shown in Fig. 7 (a), covering is as dielectric film 6 between thin film transistor (TFT) 30 layering of reliefs of pixel switch element, and contact hole 6a and drain electrode 5b by this interlayer dielectric 6, make pixel electrode 7a be electrically connected on the drain region 1d of thin film transistor (TFT) 30.Be shown in the example of Fig. 7 (a), the present application people proposes in order to compare with the present application, on the upper strata of pixel electrode 7a, forms dielectric film 8 between electrode in order, is formed with common electrode 9a, and the alignment films 16 of slot-shaped clearance portion 9b.Pixel electrode 7a and common electrode 9a are that ITO (Indium TinOxide, the tin indium oxide) film of the same thickness of 100nm～200nm constitutes by film thickness all.If according to so constituting, then can be till the position of approaching data line 5a the plain electrode 7a of terrain imaging, the advantage in the formation zone that can expand pixel electrode 7a is arranged.
Make liquid-crystal apparatus in order to adopt the device substrate 10 that so constitutes, as be shown in Fig. 7 (b), after the face side of common electrode 9a forms the alignment films 16 that is made of polyimide resin etc., adopt friction roller 40 grades to carry out the friction treatment on the surface of friction orientation film 16, the orientation of the liquid crystal molecule under the state that does not apply electric field is controlled.For the surperficial integral body in alignment films 16 is carried out so friction treatment equably, because the surface of preferred orientation film 16 is smooth, so preferably adopt organic planarization film about interlayer dielectric 6.
; if carry out friction treatment with the formation that is shown in Fig. 7 (a), Fig. 7 (b); then there is following problems: in the inboard of the clearance portion 9b of common electrode 9a; with respect to the direct of travel side of common electrode 9a at friction roller; the big step difference of thickness of common electrode 9a of resulting from causes producing the bad 16a of friction at wider range; the bad 16a that so rubs becomes the reasons for quality decrease that makes display image of the reduction etc. of contrast.But if make the thin film thickness of common electrode 9a and pixel electrode 7a, then the resistance of common electrode 9a increases, and the increase of this resistance becomes the reason that makes generations such as unevenness of brightness in image.
Except above-mentioned friction is bad, if the thickness of common electrode 9a is thick, then result from step difference itself and also might be orientated bad, or result from the formation common electrode 9a in the pixel the zone, with slot-shaped clearance portion 9b in liquid crystal layer variation in thickness and the contrast of display degree is descended.
The problems referred to above are not limited on dielectric film between electrode 8 to form the situation of common electrode 9a, take place too under the situation that forms pixel electrode 7a on the dielectric film between electrode 8.
Summary of the invention
In view of above problem points, purpose of the present invention, be to provide the resistance that does not make electrode layer increase, can be to resulting from the bad liquid-crystal apparatus that suppresses of demonstration that is formed at the thickness of the electrode on the dielectric film 8 between electrode.
In order to address the above problem, in the liquid-crystal apparatus in the present invention, possess a plurality of pixels, on-off element be set corresponding to each aforementioned pixel, be characterized as, possess: the device substrate that is formed with the aforementioned switches element, be formed at the interlayer dielectric on the aforementioned switches element, be formed at the 1st electrode layer on the aforementioned interlayer dielectric, and be formed at the aforementioned components substrate, overlook equitant the 2nd electrode layer by dielectric film between electrode and aforementioned the 1st electrode layer; Each aforementioned pixel comprises: aforementioned the 1st electrode layer and aforementioned the 2nd electrode layer overlook equitant the 1st zone and only form aforementioned the 1st electrode layer and aforementioned the 2nd electrode layer among the 2nd zone of aforementioned the 1st electrode layer; The film thickness of aforementioned the 2nd electrode layer is than the thin film thickness of aforementioned the 1st electrode layer.
And be characterized as: the aforementioned components substrate is implemented orientation process.As an example of orientation process, on the 2nd electrode layer, form after the alignment films that constitutes by polyimide resin etc., adopt friction roller etc. to carry out the friction treatment on the surface of friction orientation film.If according to the present invention, though then in the 1st zone and the boundary in the 2nd zone, form step difference in aforementioned alignment films, but because set the film thickness of the 2nd electrode layer than the 1st electrode layer unfertile land, so the step of thickness of the 2nd electrode layer of resulting from is low, so can prevent the bad generation that rubs, even taking place under the friction condition of poor, its zone is also very narrow.Therefore, can prevent to result from the bad contrast reduction of friction etc.
Effect of the present invention, though it is the most remarkable under the situation of carrying out above-mentioned friction treatment, but at other method for orientation treatment, for example make the method for light from oblique direction in photosensitive polymeric membrane, the method for orientation treatment that undertaken by the oblique evaporation film etc., suppress for lower by the step difference that will be formed on the device substrate, the orientation that also can reduce liquid crystal is bad.
The present invention, film thickness equilibrium to the 1st electrode layer and the 2nd electrode layer is optimized, because be not the film thickness attenuation that makes the both sides of the 1st electrode layer and the 2nd electrode layer simply, so the resistance of the 1st electrode layer and the 2nd electrode layer integral body is altogether increased.Thereby, can in image, not make generations such as unevenness of brightness yet.Therefore, if according to the present invention, then can the high image of display quality.
In the present invention, can adopt following formation: either party of the 1st electrode layer and the 2nd electrode layer is the pixel electrode that is connected in on-off element, and the opposing party is for striding the formed common electrode of aforementioned a plurality of pixel.Especially preferred: the 1st electrode layer is aforementioned common electrode, and the 2nd electrode layer is a pixel electrode.Its reason is: the film thickness by making common electrode is thicker, and the resistance of the common electrode that the increase that can make resistance shows as unevenness of brightness etc. easily is lower, so can not make generations such as unevenness of brightness in image.
In the present invention, be characterized as: the 2nd zone constitutes by opening or the slit that is arranged at the 2nd electrode layer.
In the present invention, be characterized as: interlayer dielectric is the planarization film that comprises organic substance.Constitute if so, then because the surface of alignment films becomes smooth, so can carry out friction treatment equably at whole face.
In the present invention, be characterized as: the ratio resistivity of material that constitutes the 1st electrode layer and the 2nd electrode layer is equal substantially.In the present invention, approach, make the film thickness of the 1st electrode layer thicker, make that to result from the step difference of thickness of the 2nd electrode lower, and prevent increase as the resistance of electrode layer integral body by making the 2nd electrode layer.Thereby under the akin situation of ratio resistivity of the ratio resistivity of the 1st electrode layer and the 2nd electrode layer, it is remarkable that effect of the present invention becomes.Most preferably: the 1st electrode layer and the 2nd electrode layer are all formed with identical materials.Even forming with different materials under the situation of the 1st electrode layer and the 2nd electrode layer, as long as the ratio resistivity of the 1st electrode layer is below 5 * 10E-4 Ω cm with the difference of the ratio resistivity of the 2nd electrode layer, then constitute adjustment realization, electrode film thickness and resistance just effectively by of the present invention.As the concrete combination of the 1st electrode layer or the 2nd electrode layer, for example can consider ITO, IZO, ZnO, In
2O
3-ZnO etc.
In the manufacture method of liquid-crystal apparatus of the present invention, liquid-crystal apparatus possesses a plurality of pixels, corresponding to each aforementioned pixel on-off element is set, being characterized as of this method, comprise following operation: the operation that forms the aforementioned switches element at the aforementioned components substrate, on the aforementioned switches element, form the operation of interlayer dielectric, on aforementioned interlayer dielectric, form the operation of the 1st electrode layer, and at the aforementioned components substrate, form by electrode between dielectric film and aforementioned the 1st electrode layer operation of overlooking equitant the 2nd electrode layer; In forming the operation of aforementioned the 2nd electrode layer, form opening or slit at aforementioned the 2nd electrode layer, and make the film thickness of aforementioned the 2nd electrode layer than aforementioned the 2nd electrode layer of thin film thickness ground formation of aforementioned the 1st electrode layer.
In the manufacture method of above-mentioned liquid-crystal apparatus, preferably also comprise following operation: on aforementioned the 2nd electrode layer, form the operation of alignment films and aforementioned alignment films is carried out the operation of friction treatment.
Application has liquid-crystal apparatus of the present invention, can be used as the display part etc. of the electronic equipment of portable telephone or portable robot calculator etc.
Description of drawings
Fig. 1 (a) and (b) be respectively from the subtend substrate-side see the vertical view of having used liquid-crystal apparatus of the present invention and each constitutive requirements formed thereon and H-H ' sectional view.
Fig. 2 is the equivalent circuit diagram that the electricity of the image display area of the expression device substrate that has been used to use liquid-crystal apparatus of the present invention constitutes.
Fig. 3 (a) and (b) be respectively the liquid-crystal apparatus in the embodiments of the present invention 11 pixel amount sectional view, and in device substrate the vertical view of adjacent pixels.
Fig. 4 is the key diagram of the situation of the friction treatment of expression manufacturing in model utility ground when having used liquid-crystal apparatus of the present invention.
Fig. 5 (a) and (b) be respectively the liquid-crystal apparatus in the embodiments of the present invention 21 pixel amount sectional view, and in device substrate the vertical view of adjacent pixels.
Fig. 6 is the key diagram that has adopted the electronic equipment of the liquid-crystal apparatus among the present invention.
Fig. 7 is the sectional view of amount of 1 pixel of existing liquid-crystal apparatus, and the key diagram of the situation of the friction treatment during this liquid-crystal apparatus of model utility ground expression manufacturing.
Symbol description
1a ... semiconductor film, 3a ... sweep trace, 4 ... interlayer dielectric, 6 ... interlayer dielectric as organic planarization film, 6a ... contact hole, 5a ... data line, 5b ... drain electrode, 7a ... pixel electrode, 7b ... the slot-shaped clearance portion of pixel electrode, 8 ... dielectric film between electrode, 9a ... common electrode, 9b ... slot-shaped clearance portion, 10 ... device substrate, 20 ... the subtend substrate, 30 ... as the thin film transistor (TFT) of pixel switch element, 50 ... liquid crystal, 60 ... keep electric capacity, 100 ... liquid-crystal apparatus, 100a ... pixel
Embodiment
Below, embodiments of the present invention are described.Also have, in the following description, for make with the formation that is shown in Fig. 7 to should be easily understood that, about the additional prosign of the part with identical functions and describe.And, carry out among the figure of reference in the following description, become the size of the degree that can recognize in the accompanying drawings in order to make each layer, each member, make the engineer's scale difference by each layer, each member.And, the diagram of color filter etc. is omitted.
Embodiment 1
(whole formation)
Fig. 1 (a) and (b) be respectively from the subtend substrate-side see the vertical view of having used liquid-crystal apparatus of the present invention and each constitutive requirements formed thereon and H-H ' sectional view.
In Fig. 1 (a), Fig. 1 (b), the liquid-crystal apparatus 100 of the manner is the liquid-crystal apparatus of the active array type of transmission-type, and on device substrate 10, encapsulant 107 is set along the edge of subtend substrate 20.At device substrate 10, the zone in the outside of encapsulant 107, one side along device substrate 10 data line drive circuit 101 and mounting terminal 102 be set, along 2 limits, form scan line drive circuit 104 adjacent to the limit that is arranged with mounting terminal 102.And then, also utilize sometimes under the architrave 108 etc., the peripheral circuit of pre-charge circuit, check circuit etc. is set.Subtend substrate 20 possesses and encapsulant 107 essentially identical profiles, and by sealing material 107, subtend substrate 20 is adhesively fixed in device substrate 10.And, between device substrate 10 and subtend substrate 20, maintain liquid crystal 50.
The details aftermentioned, at device substrate 10, pixel electrode 7a forms rectangular.With respect to this, at subtend substrate 20, form the architrave 108 that constitutes by the light-proofness material in the medial region of encapsulant 107, its inboard becomes image display area 10a.At subtend substrate 20, sometimes relative with the borderline region of the portraitlandscape of the pixel electrode 7a of device substrate 10 to the zone, form the photomask 23 that is called as black matrix or secret note band etc.
The liquid-crystal apparatus 100 of the manner drives with the FFS pattern liquid crystal 50.Therefore, on device substrate 10,, also form common electrode described later (not shown), do not form counter electrode at subtend substrate 20 in Fig. 1 (b) except pixel electrode 7a.
(the detailed formation of liquid-crystal apparatus 100)
With reference to Fig. 2, the formation of having used liquid-crystal apparatus 100 of the present invention and being used for its device substrate is described.Fig. 2 is the equivalent circuit diagram that the electricity of the image display area 10a of the expression device substrate 10 that has been used to use liquid-crystal apparatus 100 of the present invention constitutes.
As be shown in Fig. 2 ground, form a plurality of pixel 100a at the image display area 10a of liquid-crystal apparatus 100 rectangularly.A plurality of pixel 100a separately in, the thin film transistor (TFT) 30 that forms pixel electrode 7a and be used for the pixel switch that pixel electrode 7a controls is used, the data line 5a that data-signal (picture signal) is supplied with the line order is electrically connected on the source of thin film transistor (TFT) 30.Grid to thin film transistor (TFT) 30 are electrically connected sweep trace 3a, and the timing with predetermined constitutes sweep signal with the line order sweep trace 3a with applying.Pixel electrode 7a is electrically connected on the leakage of thin film transistor (TFT) 30, becomes its conducting state during making thin film transistor (TFT) 30 only certain, will write each pixel 100a with predetermined timing from the data-signal that data line 5a is supplied with.Thus by pixel electrode 7a, write the picture element signal of the predetermined level of the liquid crystal 50 that is shown in Fig. 1 (b), and be formed at keep between the common electrode 9a of device substrate 10 certain during.At this, between pixel electrode 7a and common electrode 9a, form maintenance electric capacity 60, the voltage of pixel electrode 7a for example, only keeps than long 3 time of the time that applies source voltage.Thus, can realize improving the retention performance of electric charge, the liquid-crystal apparatus 100 that can carry out the demonstration of high-contrast ratio.
In Fig. 2, common electrode 9a is expressed as the wiring of extending as from scan line drive circuit 104, and whole substantially of image display area 10a that it is formed at device substrate 10 is retained as predetermined current potential.
(the concrete formation of each pixel)
Fig. 3 (a) and (b), be respectively used liquid-crystal apparatus 100 of the present invention 1 pixel amount sectional view, and in device substrate 10 vertical view of adjacent pixels; Fig. 3 (a), the sectional view when being equivalent to have dissectd liquid-crystal apparatus 100 in the position of the A-A ' line that is equivalent to Fig. 3 (b).And in Fig. 3 (b), pixel electrode 7a represents that with the dotted line of length data line 5a reaches with its formed film of while and represents that with the single-point line sweep trace 3a represents that with double dot dash line the part of partly removing is represented with solid line in common electrode 9a.Also have, in Fig. 3 (a),, the diagram of photomask 23 and color filter is omitted about subtend substrate 20.
As be shown in Fig. 3 (a), Fig. 3 (b), on device substrate 10, a plurality of transparent pixel electrode 7a (with long dotted line institute area surrounded) form rectangular by each pixel 100a, form data line 5a (with single-point line expression), and sweep trace 3a (representing with double dot dash line) along the borderline region of the portraitlandscape of pixel electrode 7a.And, the common electrode 9a that constitutes by the ITO film in the whole substantially formation of the image display area 10a of device substrate 10.In the manner, common electrode 9a forms whole planar; At pixel electrode 7a, form a plurality of slot-shaped clearance portion 7b (representing with long dotted line) on the other hand, at clearance portion 7b place, common electrode 9a is not overlapped in pixel electrode 7a.In the manner, a plurality of clearance portion 7b are formed obliquely in the extension of sweep trace 3a direction are set, and a plurality of clearance portion 7b extend parallel to each other.
Be shown in the matrix of the device substrate 10 of Fig. 3 (a), constitute by the transparency carrier 10b of quartz base plate, stable on heating glass substrate etc.; The matrix of subtend substrate 20 is made of the transparency carrier 20b of quartz base plate, stable on heating glass substrate etc.In the manner, all adopt glass substrate about any of transparency carrier 10b, 20b.In subtend substrate 20, though form alignment films 26 at its whole, different with the liquid-crystal apparatus of TN pattern, do not form counter electrode.
Again in Fig. 3 (a), Fig. 3 (b); at device substrate 10; form the base protective film (not shown) that constitutes by silicon oxide film etc. on the surface of transparency carrier 10b, and in its face side, at the thin film transistor (TFT) 30 that forms top gate structure adjacent to the position of each pixel electrode 7a.As be shown in Fig. 3 (a), Fig. 3 (b), thin film transistor (TFT) 30, possess semiconductor film 1a, be formed with the structure of channel formation region territory 1b, source region 1c, drain region 1d with respect to island, sometimes also form: have LDD (Lightly Doped Drain, the lightly doped drain) structure that possesses low concentration region in the both sides of channel formation region territory 1b.In the manner, semiconductor film 1a is after being formed with amorphous silicon film with respect to device substrate 10, by institute's polycrystallizations such as laser annealing, lamp annealing polysilicon film.
On the upper strata of semiconductor film 1a, form the gate insulating film 2 that constitutes by silicon oxide film, silicon nitride film or their stack membrane, on the upper strata of gate insulating film 2, the part of sweep trace 3a is as gate electrode and overlapping.In the manner, semiconductor film 1a bends to the コ shape, and gate electrode has the double-gate structure that is formed at 2 places in the channel direction.
Upper strata at gate electrode (sweep trace 3a) forms the interlayer dielectric 4 that is made of silicon oxide film, silicon nitride film or their stack membrane.Form data line 5a on the surface of interlayer dielectric 4, this data line 5a is electrically connected on the source region of the most close data line 5a side by the contact hole 4a that is formed at interlayer dielectric 4.And, forming drain electrode 5b on the surface of interlayer dielectric 4, drain electrode 5b is and the data line 5a institute conducting film of formation simultaneously.Drain electrode 5b is electrically connected on drain region 1d by the contact hole 4b that is formed at interlayer dielectric 4.
In the upper layer side of data line 5a and drain electrode 5b, form interlayer dielectric 6.In the manner, interlayer dielectric 6 is as being formed by the planarization film (organic planarization film) that the thick photoresist of 1.5 μ m～2.0 μ m constitutes by film thickness.
On the surface of interlayer dielectric 6, in its scope of whole, pass through the common electrode 9a of whole planar ITO film formation as the lower layer side electrode layer.Surface at common electrode 9a forms dielectric film 8 between electrode.In the manner, dielectric film 8 between electrode, are that silicon oxide film or silicon nitride film below the 400nm constitutes by film thickness.
The upper strata of dielectric film 8 between electrode is by the pixel electrode 7a of ITO film formation as the upper layer side electrode layer.Face side at pixel electrode 7a forms alignment films 16.At pixel electrode 7a, form aforesaid slot-shaped clearance portion 7b.So carrying out under the state that constitutes, common electrode 9a and pixel electrode 7a by dielectric film 8 between electrode relative to, formation is with the maintenance electric capacity 60 of dielectric film between electrode 8 as dielectric film.
At this, pixel electrode 7a is electrically connected on drain electrode 5b by the contact hole 6a that is formed at interlayer dielectric 6.Therefore, at common electrode 9a, form the breach 9d of rectangle in the part that is formed with contact hole 6a.
In the liquid-crystal apparatus 1 that so constitutes, by being formed at the transverse electric field between pixel electrode 7a and the common electrode 9a, can drive liquid crystal 50 at slot-shaped clearance portion 7b and periphery thereof, can show image.
(formation of electrode layer, and the main effect of the manner)
Make liquid-crystal apparatus 1 in order to adopt the device substrate 10 that so constitutes, as be shown in Fig. 4 ground, after the face side of pixel electrode 7a forms the alignment films 16 that is made of polyimide resin etc., adopt friction roller 40 grades to carry out the friction treatment on the surface of friction orientation film 16, the orientation of the liquid crystal molecule under the state that does not apply electric field is as yet controlled.Carry out so friction treatment equably for the surperficial integral body in alignment films 16, the surface of preferred orientation film 16 is smooth, so adopt organic planarization film about interlayer dielectric 6.
At this, common electrode 9a as the lower layer side electrode layer, by film thickness is that the ITO film of 50nm～200nm forms whole electrode layer, pixel electrode 7a as the upper layer side electrode layer, by film thickness is the ITO film of 30nm～100nm, constitute as the electrode layer with slot-shaped clearance portion 7b, the film thickness of the film thickness of common electrode 9a and pixel electrode 7a has following relation: pixel electrode 7a (upper layer side electrode layer)＜common electrode 9a (lower layer side electrode layer).That is, compare, be formed with the thin film thickness of the pixel electrode 7a of slot-shaped clearance portion 7b with whole the formed common electrode 9a in ground.
Thereby, when having carried out friction treatment, inboard at the clearance portion 7b of pixel electrode 7a, with respect to the direct of travel side of pixel electrode 7a at friction roller, though since result from pixel electrode 7a thickness step difference and might the bad 16a of friction take place in the part that become shade, but, in the manner, be formed with the thin film thickness of the pixel electrode 7a of slot-shaped clearance portion 7b.Therefore, even under the situation of bad 16a that taken place to rub, also only betide very narrow zone.Therefore, the reduction of contrast etc. can not take place, the quality of display image is improved.
And, in the manner, the film thickness of common electrode 9a thickening: the amount that makes the film thickness attenuation of pixel electrode 7a.Therefore, keep low level as the resistance of the integral body of pixel electrode 7a and common electrode 9a.Especially, though because common electrode 9a forms in the scope of a plurality of pixels, so resistance becomes problem easily, in the manner, because make the film thickness of common electrode 9a thicker, so the resistance ratio of common electrode 9a is existing low.Therefore, can prevent from image, to take place unevenness of brightness etc. reliably.
In the present embodiment,, make the thickness thickening of common electrode, pixel electrode 7a, become big with the resistance of the total of common electrode 9a in order to prevent to result to make the unevenness of brightness of the image of pixel electrode 7a attenuation.In the present embodiment, though pixel electrode 7a, common electrode 9a have adopted the ITO film, replace the ITO film, the nesa coating that also can use IZO etc. is as pixel electrode 7a, common electrode 9a.And, also can adopt the conducting film that constitutes by electrode 7a according to pixels, material that common electrode 9a is different respectively.In this case, the absolute value of the difference of the ratio resistivity of the material by selecting to be respectively applied for pixel electrode 7a and common electrode 9a is the following material of 5 * 10E-4 Ω cm, desirability adjusted on the basis of aggregate value of resistance, realize the formation of " film thickness of pixel electrode 7a＜common electrode 9a ".
Fig. 5 (a) and (b) be respectively the liquid-crystal apparatus 100 in the embodiments of the present invention 21 pixel amount sectional view, and at the vertical view of device substrate 10 adjacent pixels; Fig. 5 (a), the sectional view when being equivalent to have dissectd liquid-crystal apparatus 100 in the position of the B-B ' line that is equivalent to Fig. 3 (b).Also have, the basic formation of the manner, since same with embodiment 1, so the additional prosign of identical part is omitted their explanation.
As be shown in Fig. 5 (b), on device substrate 10, a plurality of transparent pixel electrode 7a (with long dotted line institute area surrounded) form rectangular by each pixel 100a, form data line 5a (with single-point line expression), and sweep trace 3a (representing with double dot dash line) along the borderline region of the portraitlandscape of pixel electrode 7a.And, the common electrode 9a that constitutes by the ITO film in the whole substantially formation of the image display area 10a of device substrate 10.In the manner, whole ground of pixel electrode 7a forms; At common electrode 9a, slot-shaped clearance portion 9b is formed obliquely in the extension of sweep trace 3a direction is set on the other hand, and a plurality of slot-shaped clearance portion 9b extend parallel to each other.
As be shown in Fig. 5 (a), Fig. 5 (b), at device substrate 10, the upper layer side of thin film transistor (TFT) 30 is covered with the interlayer dielectric 6 that is made of organic planarization film, on the surface of interlayer dielectric 6, by the pixel electrode 7a of whole ground formation of ITO film as the lower layer side electrode layer.And, form dielectric film 8 between electrode on the surface of pixel electrode 7a.
The upper strata of dielectric film 8 between electrode by the common electrode 9a of ITO film formation as the upper layer side electrode layer, at common electrode 9a, forms aforesaid slot-shaped clearance portion 9b.At slot-shaped clearance portion 9b place, pixel electrode 7a is not overlapped in common electrode 9a.In pixel, the ratio that slot-shaped clearance portion 9b accounts for is 20%～60%.
Make liquid-crystal apparatus 1 in order to adopt the device substrate 10 that so constitutes, the formation that is illustrated with reference Fig. 4 substantially similarly, after the face side of common electrode 9a forms the alignment films 16 that is made of polyimide resin etc., adopt friction roller 40 grades to carry out the friction treatment on the surface of friction orientation film 16, the orientation of the liquid crystal molecule under the state that does not apply electric field is as yet controlled.Carry out so friction treatment equably for the surperficial integral body in alignment films 16, the surface of preferred orientation film 16 is smooth, so adopt organic planarization film about interlayer dielectric 6.
At this, pixel electrode 7a as the lower layer side electrode layer, by film thickness is that the ITO film of 50nm～200nm forms whole electrode layer, common electrode 9a as the upper layer side electrode layer, by film thickness is the ITO film of 30nm～100nm, constitute as the electrode layer with slot-shaped clearance portion 9b, the film thickness of the film thickness of common electrode 9a and pixel electrode 7a has following relation: common electrode 9a (upper layer side electrode layer)＜pixel electrode 7a (lower layer side electrode layer).That is, compare, be formed with the thin film thickness of the common electrode 9a of slot-shaped clearance portion 9b with whole the formed pixel electrode 7a in ground.
Thereby, when having carried out friction treatment, inboard at the slot-shaped clearance portion 9b of common electrode 9a, with respect to the direct of travel side of common electrode 9a at friction roller 40, though owing to result from the step difference of thickness of common electrode 9a and the bad 16a that might rub, but, in the manner, be formed with the thin film thickness of the common electrode 9a of slot-shaped clearance portion 9b.Therefore, even under the situation of bad 16a that taken place to rub, also only betide very narrow zone.Therefore, the reduction of contrast etc. can not take place, the quality of display image is improved.
And, in the manner,, make the film thickness thickening of pixel electrode 7a by the amount of the film thickness attenuation that makes common electrode 9a.Therefore, keep low level as the resistance of the integral body of pixel electrode 7a and common electrode 9a.
In the present embodiment, in order to prevent to result to make the unevenness of brightness of the image of pixel electrode 7a attenuation, make the thickness thickening of common electrode, it is big that the resistance of the total of pixel electrode 7a and common electrode 9a becomes.In the present embodiment, though pixel electrode 7a, common electrode 9a have adopted the ITO film, replace the ITO film, the nesa coating that also can use IZO etc. is as pixel electrode 7a, common electrode 9a.And, also can adopt the conducting film that constitutes by electrode 7a according to pixels, material that common electrode 9a is different respectively.In this case, the absolute value of the difference of the ratio resistivity of the material by selecting to be respectively applied for pixel electrode 7a and common electrode 9a is the following material of 5 * 10E-4 Ω cm, desirability adjusted on the basis of aggregate value of resistance, realize the formation of " film thickness of pixel electrode 7a＜common electrode 9a ".
(other embodiment)
Also having, though in embodiment 1, embodiment 2, when forming clearance portion, formed slot-shaped peristome, can be that broach shape or herringbone form are provided with in the liquid-crystal apparatus of clearance portion and use the present invention making pixel electrode also.
And, though in embodiment 1, embodiment 2, for having adopted the example of polysilicon film as semiconductor film, also can use the present invention at the device substrate 10 that has adopted amorphous silicon film, monocrystalline silicon layer.And, also can in the liquid-crystal apparatus that has adopted thin film diode element (nonlinear element) as the pixel switch element, use the present invention.
(to the lift-launch example of electronic equipment)
Next, about the electronic equipment of having used the liquid-crystal apparatus 100 in the above-mentioned embodiment and describe.At Fig. 6 (a), expression possesses the formation of the personal computer of the pocket that liquid-crystal apparatus 100 is arranged.Personal computer 2000 possesses liquid-crystal apparatus 100 and main part 2010 as display unit.At main part 2010, power switch 2001 and keyboard 2002 are set.At Fig. 6 (b), expression possesses the formation of the portable telephone that liquid-crystal apparatus 100 is arranged.Portable telephone 3000 possesses a plurality of operation push-buttons 3001 and scroll key 3002 and as the liquid-crystal apparatus 100 of display unit.By scroll key 3002 is operated, by the shown picture rolling of liquid-crystal apparatus 100.At Fig. 6 (c), the formation of the information portable terminal device (PDA:Personal DigitalAssistants, personal digital assistant) of liquid-crystal apparatus 100 has been used in expression.Information portable terminal device 4000 possesses a plurality of operation push-buttons 4001 and power switch 4002 and as the liquid-crystal apparatus 100 of display unit.If power switch 4002 is operated, then various information such as address book, schedule is shown by liquid-crystal apparatus 100.
Also have, as the electronic equipment of using liquid-crystal apparatus 100, except the equipment that is shown in Fig. 6, also can enumerate digital static camera, liquid crystal TV set, the video tape recorder of the type of finding a view, monitor direct viewing type, automobile navigation apparatus, pager, electronic memo, desk-top electronic calculator, word processor, workstation, television telephone set, the POS terminal has the equipment of touch panel etc.And as the display part of these various electronic equipments, aforesaid liquid-crystal apparatus 100 can be used.
Claims (9)
1. liquid-crystal apparatus, it possesses a plurality of pixels, is provided with on-off element corresponding to each aforementioned pixel, it is characterized in that possessing:
Be formed with the device substrate of aforementioned switches element,
Be formed at the interlayer dielectric on the aforementioned switches element,
Be formed on the aforementioned interlayer dielectric the 1st electrode layer and
Be formed at the aforementioned components substrate, overlook equitant the 2nd electrode layer by dielectric film between electrode and aforementioned the 1st electrode layer;
Each aforementioned pixel comprises: aforementioned the 1st electrode layer and aforementioned the 2nd electrode layer overlook equitant the 1st zone and only be formed with aforementioned the 1st electrode layer and aforementioned the 2nd electrode layer among the 2nd zone of aforementioned the 1st electrode layer;
The film thickness of aforementioned the 2nd electrode layer is than the thin film thickness of aforementioned the 1st electrode layer,
Aforementioned the 1st electrode layer is for striding the formed common electrode of aforementioned a plurality of pixel, and aforementioned the 2nd electrode layer is the pixel electrode that is connected in the aforementioned switches element.
2. according to the described liquid-crystal apparatus of claim 1, it is characterized in that:
The aforementioned components substrate is implemented orientation process.
3. according to the described liquid-crystal apparatus of claim 2, it is characterized in that:
Be formed with alignment films on aforementioned the 2nd electrode layer, the boundary in aforementioned the 1st zone with aforementioned the 2nd zone is formed with step difference in aforementioned alignment films.
4. according to the described liquid-crystal apparatus of claim 1, it is characterized in that:
Aforementioned the 2nd zone constitutes by opening or the slit that is arranged at aforementioned the 2nd electrode layer.
5. according to the described liquid-crystal apparatus of claim 1, it is characterized in that:
Aforementioned interlayer dielectric is the planarization film that comprises organic substance.
6. according to the described liquid-crystal apparatus of claim 1, it is characterized in that:
The difference of ratio resistivity that constitutes the material of aforementioned the 1st electrode layer and aforementioned the 2nd electrode layer is below 5 * 10E-4 Ω cm.
7. the manufacture method of a liquid-crystal apparatus, this liquid-crystal apparatus possesses a plurality of pixels, is provided with on-off element corresponding to each aforementioned pixel, and this manufacture method is characterised in that, comprises following operation:
In the operation of aforementioned components substrate formation aforementioned switches element,
On the aforementioned switches element, form the operation of interlayer dielectric,
On aforementioned interlayer dielectric, form the 1st electrode layer operation and
At the aforementioned components substrate, form the operation of overlooking equitant the 2nd electrode layer by dielectric film between electrode and aforementioned the 1st electrode layer;
In forming the operation of aforementioned the 2nd electrode layer, form opening or slit at aforementioned the 2nd electrode layer, and make the film thickness of aforementioned the 2nd electrode layer than aforementioned the 2nd electrode layer of thin film thickness ground formation of aforementioned the 1st electrode layer,
Aforementioned the 1st electrode layer is formed the common electrode of striding aforementioned a plurality of pixels, aforementioned the 2nd electrode layer is formed the pixel electrode that is connected in the aforementioned switches element.
8. according to the manufacture method of the described liquid-crystal apparatus of claim 7, it is characterized in that, also comprise following operation:
On aforementioned the 2nd electrode layer, form alignment films operation and
Aforementioned alignment films is carried out the operation of friction treatment.
9. electronic equipment is characterized in that:
Possesses the described liquid-crystal apparatus of claim 1.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007083647 | 2007-03-28 | ||
| JP083647/2007 | 2007-03-28 | ||
| JP2007205035A JP2008268841A (en) | 2007-03-28 | 2007-08-07 | Liquid crystal device, method of manufacturing liquid crystal device, and electronic apparatus |
| JP205035/2007 | 2007-08-07 |
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| Publication Number | Publication Date |
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| CN101276103A CN101276103A (en) | 2008-10-01 |
| CN101276103B true CN101276103B (en) | 2010-08-11 |
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| CN2008100885160A Active CN101276103B (en) | 2007-03-28 | 2008-03-27 | Liquid crystal device, method of manufacturing liquid crystal device, and electronic apparatus |
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| JP (1) | JP2008268841A (en) |
| KR (1) | KR20080088375A (en) |
| CN (1) | CN101276103B (en) |
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| JP5553513B2 (en) * | 2009-02-09 | 2014-07-16 | 株式会社ジャパンディスプレイ | Liquid crystal display device and manufacturing method thereof |
| JP5404281B2 (en) | 2009-09-28 | 2014-01-29 | 株式会社ジャパンディスプレイ | LCD panel |
| CN102129143A (en) * | 2010-12-15 | 2011-07-20 | 华映视讯（吴江）有限公司 | Pixel array substrate and manufacturing method thereof |
| CN102156369B (en) * | 2011-01-18 | 2013-09-04 | 京东方科技集团股份有限公司 | Thin film transistor liquid crystal display (TFT-LCD) array substrate and manufacturing method thereof |
| TWI423310B (en) | 2011-06-10 | 2014-01-11 | Au Optronics Corp | Pixel structure |
| CN102629046B (en) * | 2011-06-29 | 2015-05-20 | 北京京东方光电科技有限公司 | Array substrate, manufacturing method of array substrate and liquid crystal display device |
| CN104360553A (en) * | 2014-11-05 | 2015-02-18 | 京东方科技集团股份有限公司 | Array substrate, color film substrate, manufacturing methods of array substrate and color film substrate, display panel, and display device |
| CN104538412A (en) * | 2015-01-26 | 2015-04-22 | 京东方科技集团股份有限公司 | Array substrate and production method thereof and display device |
| KR102356827B1 (en) * | 2015-03-04 | 2022-02-03 | 삼성디스플레이 주식회사 | Thin film transistor substrate and method of manufacturing the same |
| CN105185739A (en) * | 2015-06-26 | 2015-12-23 | 京东方科技集团股份有限公司 | Array substrate making method, mask, array substrate and display device |
| CN105487315A (en) * | 2016-01-19 | 2016-04-13 | 武汉华星光电技术有限公司 | TFT (thin film transistor) array substrate |
| WO2024045076A1 (en) * | 2022-08-31 | 2024-03-07 | 京东方科技集团股份有限公司 | Array substrate and method for manufacturing same, and liquid crystal panel |
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| KR20080088375A (en) | 2008-10-02 |
| TWI428677B (en) | 2014-03-01 |
| TW200905338A (en) | 2009-02-01 |
| JP2008268841A (en) | 2008-11-06 |
| CN101276103A (en) | 2008-10-01 |
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