CN104538412A - Array substrate and production method thereof and display device - Google Patents
Array substrate and production method thereof and display device Download PDFInfo
- Publication number
- CN104538412A CN104538412A CN201510037562.8A CN201510037562A CN104538412A CN 104538412 A CN104538412 A CN 104538412A CN 201510037562 A CN201510037562 A CN 201510037562A CN 104538412 A CN104538412 A CN 104538412A
- Authority
- CN
- China
- Prior art keywords
- pixel electrode
- electrode
- array base
- base palte
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
The invention relates to the technical field of display and discloses an array substrate, a production method of the array substrate and a display device. A pixel electrode of the array substrate and a drain electrode of a thin film transistor are arranged in the same layer and are made of the same material, the composition processes of the same source-drain metal layer films are formed simultaneously, and the pixel electrode is provided with a plurality of slits to ensure certain light transmittance and provide required light rays for liquid crystal display. According to the array substrate, the independent pixel electrode production process is removed, the production process of the array substrate is simplified and the production cost is reduced.
Description
Technical field
The present invention relates to Display Technique field, particularly relate to a kind of array base palte and preparation method thereof, display unit.
Background technology
Thin Film Transistor-LCD (Thin Film Transistor-Liquid Crystal Display, be called for short TFT-LCD) feature such as to have volume little, low in energy consumption, radiationless, developed rapidly in recent years, dominate in current flat panel display market.The agent structure of TFT-LCD is liquid crystal panel, and liquid crystal panel comprises backlight, to the thin-film transistor array base-plate of box and color membrane substrates, liquid crystal molecule is filled between array base palte and color membrane substrates.The side of liquid crystal panel display frame is provided with polaroid, relative opposite side is provided with lower polaroid, wherein, upper polaroid is vertical with the polarization direction of lower polaroid.The light that backlight sends is supplied to array base palte by lower polaroid, more successively by after liquid crystal molecule, color membrane substrates, penetrates through upper polaroid.
At present, TFT-LCD can be divided into according to display mode: twisted-nematic (TN, Twisted Nematic) type, plane conversion (IPS, In Plane Switching) type and senior super dimension field switch (ADS, AdvancedSuper Dimension Switch) type.Wherein, the electric field that the electric field that ADS is mainly produced by gap electrode edge in same plane and gap electrode layer and plate electrode interlayer produce forms multi-dimensional electric field, make in liquid crystal cell that between gap electrode, directly over electrode, all aligned liquid-crystal molecules can both produce rotation, thus improve liquid crystal operating efficiency and increase light transmission efficiency.ADS technology can improve the picture quality of TFT-LCD product, have high-resolution, high permeability, low-power consumption, wide viewing angle, high aperture, low aberration, without advantages such as water of compaction ripples (push Mura).
For ADS type array base palte, shown in composition graphs 1, the manufacture craft of the thin-film transistor array base-plate of existing ADS type TFT-LCD is generally: formation gate electrode 1 → formation gate insulation layer 11 → formation active layer pattern 2 → formation source electrode 3 and drain electrode 4 → formation pixel electrode 5 ＇ → formation passivation layer 12 → formation public electrode 6 on the transparent substrate 10, manufacture craft is loaded down with trivial details, improves production cost.
Summary of the invention
The invention provides a kind of array base palte and preparation method thereof, in order to simplify manufacture craft, reduce production cost.
The present invention also provides a kind of display unit, comprises above-mentioned array base palte, in order to reduce the cost of product.
For solving the problems of the technologies described above, a kind of array base palte being provided in the embodiment of the present invention, comprising thin-film transistor, described thin-film transistor comprises source electrode and drain electrode, described array base palte also comprises pixel electrode, and described pixel electrode and described drain electrode are arranged with material with layer, have multiple slit.
Array base palte as above, preferably, multiple slits of described pixel electrode be arranged in parallel, and light becomes polarised light after described pixel electrode.
Array base palte as above, preferably, the width of described slit is less than 0.5um.
Array base palte as above, preferably, described pixel electrode and described drain electrode are structure as a whole.
Array base palte as above, preferably, described array base palte also comprises:
Public electrode, described public electrode is gap electrode, and is positioned at above described pixel electrode.
A kind of display unit is also provided in the embodiment of the present invention, comprise backlight, to box arrange array base palte and color membrane substrates, and the layer of liquid crystal molecule be filled between described array base palte and color membrane substrates, described array base palte comprises thin-film transistor, described thin-film transistor comprises source electrode and drain electrode, described array base palte also comprises pixel electrode, and described pixel electrode and described drain electrode are arranged with material with layer, have multiple slit.
Display unit as above, preferably, multiple slits of described pixel electrode be arranged in parallel, and the width of described slit is less than the wavelength that described backlight emits beam;
Described display unit also comprises:
Upper polaroid, is arranged on the side of described color membrane substrates away from described array base palte;
The polarization direction of described upper polaroid is parallel with the slit bearing of trend of described pixel electrode.
Display unit as above, preferably, described array base palte also comprises public electrode, and described public electrode is gap electrode, and is positioned at above described pixel electrode.
A kind of manufacture method of array base palte is also provided in the embodiment of the present invention, comprise the step forming pixel electrode and thin-film transistor, described thin-film transistor comprises source electrode and drain electrode, it is characterized in that, the step of described formation pixel electrode and thin-film transistor comprises:
Be formed with leakage metal layer thin film, carry out patterning processes to described leakage metal layer thin film and form the figure comprising described drain electrode and pixel electrode, wherein, described pixel electrode has multiple slit.
Manufacture method as above, preferably, multiple slits of described pixel electrode be arranged in parallel, and light becomes polarised light after described pixel electrode.
The beneficial effect of technique scheme of the present invention is as follows:
In technique scheme, the pixel electrode of array base palte and the drain electrode of thin-film transistor are arranged with material with layer, by being formed the patterning processes of same source and drain metal layer thin film simultaneously, and described pixel electrode has multiple slit, to ensure certain light transmittance, for liquid crystal display provides required light.Array base palte of the present invention, due to the default technique of independent making pixel electrode, simplifies the manufacture craft of array base palte, reduces production cost.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 represents the structural representation of array base palte in prior art;
Fig. 2 represents the structural representation of array base palte in the embodiment of the present invention.
Embodiment
The invention provides a kind of array base palte and preparation method thereof, described array base palte comprises pixel electrode and thin-film transistor, the drain electrode of described pixel electrode and thin-film transistor is arranged with material with layer, formed especially by the patterning processes of same source and drain metal layer thin film simultaneously, and described pixel electrode has multiple slit, to ensure certain light transmittance, for liquid crystal display provides required light.In technique scheme, due to the default technique of independent making pixel electrode, simplify the manufacture craft of array base palte, reduce production cost.
Further, the multiple slits arranging described pixel electrode be arranged in parallel, it is metal fine between described slit, form wire-grid polarizer, make light (being specially natural daylight) become polarised light after described drain electrode, thus pixel electrode is with the function of the lower polaroid of liquid crystal panel, does not need to arrange lower polaroid again, simplify the structure of liquid crystal panel, the slimming of product can be realized.
Before technical scheme of the present invention is described, first the technical term that the present invention relates to is described below:
Wire-grid polarizer: the structure with the many strip metals fine rule formed on light-transmitting substrate, described many strip metals fine rule arranges in parallel to each other.When the spacing of described metal fine is enough little compared with the wavelength of incident light, light wave vector transmission vertical with the bearing of trend of metal fine in incident light, the light wave vector parallel with the bearing of trend of metal fine is absorbed or is reflected, form polarised light, the polarization direction of described polarised light is vertical with the bearing of trend of metal fine.Wire-grid polarizer has higher polarised light separating power.
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is described in further detail.Following examples for illustration of the present invention, but are not used for limiting the scope of the invention.
Shown in composition graphs 2, a kind of array base palte is provided in the embodiment of the present invention, comprise pixel electrode 5 and thin-film transistor, described thin-film transistor comprises source electrode 3 and drain electrode 4, wherein, pixel electrode 5 and drain electrode 4 are arranged with material with layer, thus do not need independent technique to form pixel electrode 5, simplify the manufacture craft of array base palte, reduce production cost.Meanwhile, pixel electrode 5 has multiple slit 7, to ensure certain light transmittance, for liquid crystal display provides required light.
The material of pixel electrode 5 is specially source and drain metal, can pass through to be formed the patterning processes of same source and drain metal layer thin film with the source electrode 3 of thin-film transistor and drain electrode 4 simultaneously.The material of source and drain metal level is Cu, Al, Ag, Mo, Cr, Nd, Ni, Mn, Ti, Ta, the alloy of the metals such as W and these metals, source and drain metal level can be single layer structure or sandwich construction, and sandwich construction is Cu Mo such as, Ti Cu Ti, Mo Al Mo etc.
Technical scheme of the present invention is by forming the pixel electrode of array base palte simultaneously to the patterning processes of same source and drain metal layer thin film, and the drain electrode of thin-film transistor, simplifies the manufacture craft of array base palte, reduces production cost.
Correspondingly, also provide a kind of manufacture method of array base palte in the embodiment of the present invention, comprise the step forming pixel electrode and thin-film transistor, described thin-film transistor comprises source electrode and drain electrode, and the step of described formation pixel electrode and thin-film transistor comprises:
Be formed with leakage metal layer thin film, carry out patterning processes to described leakage metal layer thin film and form the figure comprising described drain electrode and pixel electrode, wherein, described pixel electrode has multiple slit.
Preferably, multiple slits 7 of pixel electrode 5 be arranged in parallel, are source and drain metal fine between slit 7, form wire-grid polarizer.When the width of slit 7 is enough little compared with the wavelength of incident light (being specially natural daylight), light wave vector transmission vertical with the bearing of trend of slit 7 in incident light, the light wave vector parallel with the bearing of trend of slit 7 is absorbed or is reflected, form polarised light, the polarization direction of described polarised light is vertical with the bearing of trend of slit 7.Thus pixel electrode 5 is with the function of the lower polaroid of liquid crystal panel, does not need to arrange lower polaroid again, simplify the structure of liquid crystal panel, the slimming of product can be realized.In liquid crystal indicator, described incident light is specifically provided by backlight.
Wherein, slit 7 width of pixel electrode 5 is less than 0.5um, and the wavelength compared to incident light is enough little, makes incident light after pixel electrode 5, forms polarised light.
In a concrete execution mode, the pixel electrode 5 of array base palte is arranged with material with layer with the source electrode 3 of thin-film transistor and drain electrode 4, by being formed the patterning processes of same source and drain metal layer thin film simultaneously, the default technique of independent making pixel electrode, simplify the manufacture craft of array base palte, reduce production cost.And pixel electrode 5 has multiple slit 7, the light (being specially natural daylight) that backlight sends, after pixel electrode 5, still has enough light transmittances, for liquid crystal display provides required light.Wherein, multiple slits 7 of pixel electrode 5 be arranged in parallel, it is source and drain metal fine between slit 7, the wavelength of the light that the width of slit 7 sends compared to backlight is enough little, the light that backlight sends is after pixel electrode 5, the light wave vector transmission vertical with the bearing of trend of slit 7, the light wave vector parallel with the bearing of trend of slit 7 is absorbed by source and drain metal fine or reflects, become polarised light, the pixel electrode 5 of this structure is with the function of the lower polaroid of liquid crystal panel, do not need to arrange lower polaroid again, simplify the structure of liquid crystal panel, the slimming of product can be realized.
Further, the array base palte in the embodiment of the present invention also comprises public electrode 6, and public electrode 6 is gap electrode, and is positioned at above pixel electrode 5.In the course of the work, the electric field that in same plane, slit public electrode 6 edge produces, and the electric field that public electrode 6 and pixel electrode 5 interlayer produce forms multi-dimensional electric field, all liquid crystal molecules between gap electrode, directly over electrode are made to produce deflection, realize ADS display mode, improve liquid crystal operating efficiency and increase light transmittance, improve the picture quality of product, have high-resolution, high permeability, low-power consumption, wide viewing angle, high aperture, low aberration, without advantages such as water of compaction ripples.
Shown in composition graphs 2, the array base palte in the embodiment of the present invention is specially thin-film transistor array base-plate, comprising:
The grid line (not shown) that transverse and longitudinal is intersected and data wire (not shown), for limiting multiple pixel region, each pixel region comprises:
Pixel electrode 5, has multiple slit 7 be arranged in parallel, is source and drain metal fine between slit 7, and form wire-grid polarizer, light becomes polarised light after pixel electrode 5, and the polarization direction of described polarised light is vertical with the bearing of trend of slit 7;
Thin-film transistor, the gate electrode 1 of described thin-film transistor is connected with grid line, source electrode 3 is connected with data wire, drain electrode 4 is connected with pixel electrode 5, the sweep signal that grid line transmits, for opening thin-film transistor line by line, when thin-film transistor is opened, the pixel voltage that data wire transmits transfers to pixel electrode 5 by thin-film transistor, and the source electrode 3 of pixel electrode 5 and thin-film transistor and drain electrode 4 are for arrange with material with layer, and material is source and drain metal;
Slit public electrode 6, is positioned at above pixel electrode 5, and forms multi-dimensional electric field between pixel electrode 5, drives liquid crystal deflecting element special angle, realizes the display of corresponding GTG.
Preferably, the drain electrode 4 arranging pixel electrode 5 and thin-film transistor is structure as a whole, and not needing increases electric connection structure to connect pixel electrode 5 and drain electrode 4, simplifies structure and the manufacture craft of array base palte further.
For bottom gate thin film transistor, in the embodiment of the present invention, the manufacture method of thin-film transistor array base-plate specifically comprises:
Step S1, on underlay substrate 10, form grid metal layer thin film, first time patterning processes is carried out to described grid metal layer thin film, form the figure comprising grid line (not shown) and gate electrode 1;
Underlay substrate 10 is transparency carrier, Ke Yiwei: glass substrate, quartz base plate and organic resin substrate;
Particularly, the method for sputtering or thermal evaporation can be adopted on underlay substrate 10 to deposit grid metal layer thin film, and grid metal level can be Cu, Al, Ag, Mo, Cr, Nd, Ni, Mn, Ti, Ta, the alloy of the metals such as W and these metals, grid metal level can be single layer structure or sandwich construction, and sandwich construction is Cu Mo such as, Ti Cu Ti, Mo Al Mo etc.
Grid metal layer thin film applies one deck photoresist, mask plate is adopted to expose photoresist, development, photoresist is made to form photoresist not reserve area and photoresist reserve area, wherein, photoresist reserve area at least corresponds to the region at grid line and gate electrode 1 place, and photoresist not reserve area corresponds to other regions; Etched away the grid metal layer thin film of photoresist not reserve area by etching technics completely, peel off remaining photoresist, form the figure comprising grid line and gate electrode 1.
Step S2, on the underlay substrate 10 of completing steps S1, form gate insulation layer film 11;
The material of gate insulation layer 11 can select oxide, nitride or nitrogen oxide, can be individual layer, bilayer or sandwich construction.Particularly, the material of gate insulation layer 11 can be SiNx, SiOx or Si (ON) x.
Step S3, on the underlay substrate 10 of completing steps S2, form semiconductor layer film, second time patterning processes is carried out to described semiconductor layer film, form the active layer pattern 2 of thin-film transistor;
The material of active layer 2 can be Si semiconductor or metal-oxide semiconductor (MOS).
Step S4, on the underlay substrate 10 of completing steps S3, form source and drain metal layer thin film, third time patterning processes is carried out to described source and drain metal layer thin film, formed and comprise pixel electrode 5 and the source electrode 3 of thin-film transistor and the figure of drain electrode 4, wherein, pixel electrode 5 and drain electrode 4 are structure as a whole, pixel electrode 5 has multiple slit 7 be arranged in parallel, it is source and drain metal fine between slit 7, form wire-grid polarizer, incident light becomes polarised light after pixel electrode 5, and the polarization direction of described polarised light is vertical with the bearing of trend of slit 7;
The material of source and drain metal level is Cu, Al, Ag, Mo, Cr, Nd, Ni, Mn, Ti, Ta, the alloy of the metals such as W and these metals, source and drain metal level can be single layer structure or sandwich construction, and sandwich construction is Cu Mo such as, Ti Cu Ti, Mo Al Mo etc.
Step S5, on the underlay substrate 10 of completing steps S4, form passivation layer film 12;
The material of passivation layer 12 can select oxide, nitride or nitrogen oxide, can be individual layer, bilayer or sandwich construction.Particularly, the material of passivation layer 12 can be SiNx, SiOx or Si (ON) x.
Step S6, on the underlay substrate 10 of completing steps S5, form electrically conducting transparent layer film, 4th patterning processes is carried out to described electrically conducting transparent layer film, form the figure comprising public electrode 6, public electrode 6 is gap electrode, corresponding with the position of pixel electrode 5, for the formation of the electric field driving liquid crystal deflecting element;
The material of transparency conducting layer is tin indium oxide or indium zinc oxide.
So far the making of bottom gate thin film transistor array base palte is completed.
It should be noted that, above-mentionedly just specifically introduce technical scheme of the present invention for bottom gate thin film transistor array base palte, is not a kind of restriction.Technical scheme of the present invention is also applicable to top gate type thin film transistor array base palte, coplanar structure thin-film transistor array base-plate, the manufacturing process of its drain electrode and pixel electrode is same as described above, the manufacturing process of other structures is same as the prior art, is not described in detail in this.
The array base palte also provide a kind of display unit in the embodiment of the present invention, comprise backlight, arranging box and color membrane substrates, and be filled in the layer of liquid crystal molecule between described array base palte and color membrane substrates, backlight provides the light needed for liquid crystal display.Described array base palte adopts the array base palte in the embodiment of the present invention, in order to simplify the manufacture craft of product, reduces production cost.
Preferably, on array base palte, multiple slits of pixel electrode be arranged in parallel, are source and drain metal fine between described slit.The width of described slit is less than the wavelength that backlight emits beam, when the width of described slit is enough little compared with the wavelength of incident light, the light that backlight sends is after pixel electrode, the light wave vector transmission vertical with the bearing of trend of described slit, the light wave vector parallel with the bearing of trend of described slit is absorbed or is reflected, form polarised light, the polarization direction of described polarised light is vertical with the bearing of trend of described slit.Thus pixel electrode can substitute lower polaroid of the prior art, default time polaroid, simplifies the structure of product.
In lcd technology, the polarization direction of described pixel electrode is vertical with the polarization direction of the upper polaroid of display unit, that is, the polarization direction of described upper polaroid is parallel with the bearing of trend of the slit of described pixel electrode.
Described display unit can be: any product or parts with Presentation Function such as liquid crystal panel, mobile phone, panel computer, television set, display, notebook computer, DPF, navigator.
In technical scheme of the present invention, the pixel electrode of array base palte and the drain electrode of thin-film transistor are arranged with material with layer, by being formed the patterning processes of same source and drain metal layer thin film simultaneously, and described pixel electrode has multiple slit, to ensure certain light transmittance, for liquid crystal display provides required light.Array base palte of the present invention, due to the default technique of independent making pixel electrode, simplifies the manufacture craft of array base palte, reduces production cost.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the prerequisite not departing from the technology of the present invention principle; can also make some improvement and replacement, these improve and replace and also should be considered as protection scope of the present invention.
Claims (10)
1. an array base palte, comprises thin-film transistor, and described thin-film transistor comprises source electrode and drain electrode, it is characterized in that, described array base palte also comprises pixel electrode, and described pixel electrode and described drain electrode are arranged with material with layer, have multiple slit.
2. array base palte according to claim 1, is characterized in that, multiple slits of described pixel electrode be arranged in parallel, and light becomes polarised light after described pixel electrode.
3. array base palte according to claim 2, is characterized in that, the width of described slit is less than 0.5um.
4. the array base palte according to any one of claim 1-3, is characterized in that, described pixel electrode and described drain electrode are structure as a whole.
5. the array base palte according to any one of claim 1-3, is characterized in that, described array base palte also comprises:
Public electrode, described public electrode is gap electrode, and is positioned at above described pixel electrode.
6. a display unit, comprise backlight, to box arrange array base palte and color membrane substrates, and the layer of liquid crystal molecule be filled between described array base palte and color membrane substrates, described array base palte comprises thin-film transistor, described thin-film transistor comprises source electrode and drain electrode, it is characterized in that, described array base palte also comprises pixel electrode, described pixel electrode and described drain electrode are arranged with material with layer, have multiple slit.
7. display unit according to claim 6, is characterized in that, multiple slits of described pixel electrode be arranged in parallel, and the width of described slit is less than the wavelength that described backlight emits beam;
Described display unit also comprises:
Upper polaroid, is arranged on the side of described color membrane substrates away from described array base palte;
The polarization direction of described upper polaroid is parallel with the slit bearing of trend of described pixel electrode.
8. the display unit according to claim 6 or 7, is characterized in that, described array base palte also comprises public electrode, and described public electrode is gap electrode, and is positioned at above described pixel electrode.
9. a manufacture method for array base palte, comprise the step forming pixel electrode and thin-film transistor, described thin-film transistor comprises source electrode and drain electrode, it is characterized in that, the step of described formation pixel electrode and thin-film transistor comprises:
Be formed with leakage metal layer thin film, carry out patterning processes to described leakage metal layer thin film and form the figure comprising described drain electrode and pixel electrode, wherein, described pixel electrode has multiple slit.
10. manufacture method according to claim 9, is characterized in that, multiple slits of described pixel electrode be arranged in parallel, and light becomes polarised light after described pixel electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510037562.8A CN104538412A (en) | 2015-01-26 | 2015-01-26 | Array substrate and production method thereof and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510037562.8A CN104538412A (en) | 2015-01-26 | 2015-01-26 | Array substrate and production method thereof and display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104538412A true CN104538412A (en) | 2015-04-22 |
Family
ID=52853915
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510037562.8A Pending CN104538412A (en) | 2015-01-26 | 2015-01-26 | Array substrate and production method thereof and display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104538412A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104932127A (en) * | 2015-07-09 | 2015-09-23 | 京东方科技集团股份有限公司 | Array substrate and manufacture method thereof and display device |
| WO2017036123A1 (en) * | 2015-09-06 | 2017-03-09 | 京东方科技集团股份有限公司 | Array substrate, and manufacturing method and display device therefor |
| CN107526205A (en) * | 2016-06-17 | 2017-12-29 | 三星显示有限公司 | Liquid crystal display device |
| CN108319069A (en) * | 2018-03-30 | 2018-07-24 | 惠州市华星光电技术有限公司 | Mirror face display equipment |
| US10101609B2 (en) | 2016-10-21 | 2018-10-16 | A.U. Vista, Inc. | Pixel structure utilizing nanowire grid polarizers with multiple domain vertical alignment |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020131003A1 (en) * | 2001-03-15 | 2002-09-19 | Nec Corporation | Active matrix type liquid crystal display device and method of manufacturing the same |
| CN101276103A (en) * | 2007-03-28 | 2008-10-01 | 爱普生映像元器件有限公司 | Liquid crystal device, method of manufacturing liquid crystal device, and electronic apparatus |
| CN101290446A (en) * | 2008-05-16 | 2008-10-22 | 京东方科技集团股份有限公司 | TFT-LCD array substrate and method of manufacture |
| CN101614917A (en) * | 2008-06-25 | 2009-12-30 | 北京京东方光电科技有限公司 | TFT-LCD array base palte and manufacture method thereof |
| CN102629589A (en) * | 2011-12-27 | 2012-08-08 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method thereof, and display apparatus |
| CN102629584A (en) * | 2011-11-15 | 2012-08-08 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method thereof and display device |
| CN103018977A (en) * | 2012-12-14 | 2013-04-03 | 京东方科技集团股份有限公司 | Array substrate and manufacture method thereof |
| CN103018974A (en) * | 2012-11-30 | 2013-04-03 | 京东方科技集团股份有限公司 | Liquid crystal display device, polysilicon array substrate and manufacturing method |
| CN103176322A (en) * | 2011-12-21 | 2013-06-26 | 乐金显示有限公司 | Liquid crystal display device and method for fabricating the same |
-
2015
- 2015-01-26 CN CN201510037562.8A patent/CN104538412A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020131003A1 (en) * | 2001-03-15 | 2002-09-19 | Nec Corporation | Active matrix type liquid crystal display device and method of manufacturing the same |
| CN101276103A (en) * | 2007-03-28 | 2008-10-01 | 爱普生映像元器件有限公司 | Liquid crystal device, method of manufacturing liquid crystal device, and electronic apparatus |
| CN101290446A (en) * | 2008-05-16 | 2008-10-22 | 京东方科技集团股份有限公司 | TFT-LCD array substrate and method of manufacture |
| CN101614917A (en) * | 2008-06-25 | 2009-12-30 | 北京京东方光电科技有限公司 | TFT-LCD array base palte and manufacture method thereof |
| CN102629584A (en) * | 2011-11-15 | 2012-08-08 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method thereof and display device |
| CN103176322A (en) * | 2011-12-21 | 2013-06-26 | 乐金显示有限公司 | Liquid crystal display device and method for fabricating the same |
| CN102629589A (en) * | 2011-12-27 | 2012-08-08 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method thereof, and display apparatus |
| CN103018974A (en) * | 2012-11-30 | 2013-04-03 | 京东方科技集团股份有限公司 | Liquid crystal display device, polysilicon array substrate and manufacturing method |
| CN103018977A (en) * | 2012-12-14 | 2013-04-03 | 京东方科技集团股份有限公司 | Array substrate and manufacture method thereof |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104932127A (en) * | 2015-07-09 | 2015-09-23 | 京东方科技集团股份有限公司 | Array substrate and manufacture method thereof and display device |
| CN104932127B (en) * | 2015-07-09 | 2018-07-06 | 京东方科技集团股份有限公司 | A kind of array substrate and preparation method thereof, display device |
| WO2017036123A1 (en) * | 2015-09-06 | 2017-03-09 | 京东方科技集团股份有限公司 | Array substrate, and manufacturing method and display device therefor |
| US10809580B2 (en) | 2015-09-06 | 2020-10-20 | Boe Technology Group Co., Ltd. | Array substrate and method for manufacturing the same, and display device |
| CN107526205A (en) * | 2016-06-17 | 2017-12-29 | 三星显示有限公司 | Liquid crystal display device |
| US10101609B2 (en) | 2016-10-21 | 2018-10-16 | A.U. Vista, Inc. | Pixel structure utilizing nanowire grid polarizers with multiple domain vertical alignment |
| CN108319069A (en) * | 2018-03-30 | 2018-07-24 | 惠州市华星光电技术有限公司 | Mirror face display equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7525626B2 (en) | Liquid crystal display and method for manufacturing the same | |
| CN102645803B (en) | Pixel unit, array substrate, liquid crystal panel, display device and manufacturing methods thereof | |
| CN102629577B (en) | TFT array substrate and manufacturing method thereof and display device | |
| US20130182210A1 (en) | Liquid crystal display and fabricating method thereof | |
| US7342252B2 (en) | Thin film transistor array substrate and fabricating method thereof | |
| CN202189212U (en) | Transflective electrochromism liquid crystal display | |
| JP5044098B2 (en) | Array substrate, manufacturing method thereof, and liquid crystal display device having the same | |
| CN102881688A (en) | Array substrate, display panel and array substrate manufacturing method | |
| CN102540604A (en) | Method for fabricating array substrate for FFS mode liquid crystal display device | |
| US20070285591A1 (en) | Liquid crystal display panel and method of manufacturing the same | |
| CN104423107A (en) | Liquid crystal display device and febrication method thereof | |
| CN104538412A (en) | Array substrate and production method thereof and display device | |
| CN104934443A (en) | Array substrate, manufacture method thereof, and display device | |
| CN103309105A (en) | Array baseplate and preparation method thereof, and display device | |
| US7906356B2 (en) | Method of manufacturing array substrate of horizontal electric field type transreflective liquid crystal display | |
| CN104730781A (en) | ADS array substrate, manufacturing method thereof, and display device comprising same | |
| JP4646018B2 (en) | Liquid crystal display device and manufacturing method thereof | |
| US9147697B2 (en) | Manufacturing method of array substrate, array substrate, and display apparatus | |
| CN102931138A (en) | Array substrate and manufacturing method thereof and display device | |
| CN103700663A (en) | Array substrate and manufacturing method thereof, and display device | |
| CN103413784A (en) | Array substrate, preparing method thereof and display device | |
| US8197995B2 (en) | Method of manufacturing array substrate of transreflective liquid crystal display | |
| CN202084547U (en) | Array substrate, liquid crystal plane and display equipment | |
| KR101123452B1 (en) | In Plane Switching Mode Liquid Crystal Display device and the fabrication method | |
| CN103700666A (en) | TFT (Thin Film Transistor) array base plate and display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150422 |