TW200903827A - Manufacturing method of n<+> type polysilicon emitter - Google Patents
Manufacturing method of n<+> type polysilicon emitter Download PDFInfo
- Publication number
- TW200903827A TW200903827A TW096125363A TW96125363A TW200903827A TW 200903827 A TW200903827 A TW 200903827A TW 096125363 A TW096125363 A TW 096125363A TW 96125363 A TW96125363 A TW 96125363A TW 200903827 A TW200903827 A TW 200903827A
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- type
- titanium
- type polycrystalline
- layer
- Prior art date
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 17
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 title abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000010409 thin film Substances 0.000 claims abstract description 16
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000010936 titanium Substances 0.000 claims abstract description 15
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 15
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 9
- 238000009792 diffusion process Methods 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 77
- 229910052732 germanium Inorganic materials 0.000 claims description 32
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 32
- 150000002736 metal compounds Chemical class 0.000 claims description 16
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 6
- 229910052574 oxide ceramic Inorganic materials 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 239000011224 oxide ceramic Substances 0.000 claims description 4
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- 230000005684 electric field Effects 0.000 claims description 3
- 125000004437 phosphorous atom Chemical group 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- ZWYDDDAMNQQZHD-UHFFFAOYSA-L titanium(ii) chloride Chemical group [Cl-].[Cl-].[Ti+2] ZWYDDDAMNQQZHD-UHFFFAOYSA-L 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims 3
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 claims 2
- QAKMMQFWZJTWCW-UHFFFAOYSA-N bismuth titanium Chemical compound [Ti].[Bi] QAKMMQFWZJTWCW-UHFFFAOYSA-N 0.000 claims 1
- 210000003298 dental enamel Anatomy 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 238000002425 crystallisation Methods 0.000 abstract description 7
- 230000008025 crystallization Effects 0.000 abstract description 4
- 239000000919 ceramic Substances 0.000 abstract description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 2
- 230000006798 recombination Effects 0.000 abstract description 2
- 238000005215 recombination Methods 0.000 abstract description 2
- 238000000407 epitaxy Methods 0.000 abstract 2
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910000765 intermetallic Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 description 3
- 229910033181 TiB2 Inorganic materials 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 3
- 239000004575 stone Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- YGYAWVDWMABLBF-UHFFFAOYSA-N Phosgene Chemical compound ClC(Cl)=O YGYAWVDWMABLBF-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 229910008479 TiSi2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910001566 austenite Inorganic materials 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000001356 surgical procedure Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- -1 titanium-bismuth metal compound Chemical class 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW096125363A TW200903827A (en) | 2007-07-12 | 2007-07-12 | Manufacturing method of n<+> type polysilicon emitter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW096125363A TW200903827A (en) | 2007-07-12 | 2007-07-12 | Manufacturing method of n<+> type polysilicon emitter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200903827A true TW200903827A (en) | 2009-01-16 |
| TWI343657B TWI343657B (enExample) | 2011-06-11 |
Family
ID=44722201
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096125363A TW200903827A (en) | 2007-07-12 | 2007-07-12 | Manufacturing method of n<+> type polysilicon emitter |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW200903827A (enExample) |
-
2007
- 2007-07-12 TW TW096125363A patent/TW200903827A/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TWI343657B (enExample) | 2011-06-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101481792B (zh) | 一种硼掺杂金刚石超导材料的制备方法 | |
| TWI551716B (zh) | 形成鍺薄膜之方法 | |
| JP2002305293A (ja) | 半導体部材の製造方法及び半導体装置の製造方法 | |
| JP2000223419A (ja) | 単結晶シリコン層の形成方法及び半導体装置の製造方法、並びに半導体装置 | |
| CN112309832B (zh) | 可转移氧化镓单晶薄膜的制备方法 | |
| CN109023529A (zh) | 一种大面积二维BiOI单晶的制备方法 | |
| JPH04225571A (ja) | 薄膜トランジスタ | |
| CN113488547A (zh) | 隧穿氧化层钝化结构及其制作方法与应用 | |
| CN102064239A (zh) | 一种多晶硅厚膜太阳能电池生产方法 | |
| CN109941991B (zh) | 一种直接在绝缘衬底表面制备石墨烯的方法 | |
| JP2000138384A (ja) | 非晶質半導体素子及びその製造方法 | |
| CN119300472A (zh) | 异质结太阳能电池及制备方法 | |
| CN115000240A (zh) | 隧穿氧化层钝化接触电池的制备方法以及钝化接触电池 | |
| TW200903827A (en) | Manufacturing method of n<+> type polysilicon emitter | |
| CN107516691A (zh) | 一种非晶碳薄膜/单晶硅异质结太阳能电池及其制备方法 | |
| KR101919086B1 (ko) | 다결정 실리콘 박막 형성 방법 | |
| CN102891073B (zh) | 一种低温等离子体辅助铝诱导多晶碳化硅薄膜的制备方法 | |
| CN102912333B (zh) | 利用层层自组装制备热电薄膜的方法 | |
| TW200539470A (en) | Method for making transparent conductive film and method for making tandem thin-film photoelectric converter | |
| CN110408990A (zh) | 单晶石墨烯的制备方法 | |
| TW200903818A (en) | Polysilicon thin-film epitaxy manufacturing method for polysilicon thin-film solar cell device | |
| CN109103203A (zh) | 一种cmos薄膜晶体管及其制作方法 | |
| US7485560B2 (en) | Method for fabricating crystalline silicon thin films | |
| TW200903823A (en) | Titanium-based metallic compound thin-film manufacturing method for polysilicon thin-film solar cell device | |
| TW200905896A (en) | Fabricating method of polysilicon thin-film solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |