TW200842393A - Radiation detector - Google Patents
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- TW200842393A TW200842393A TW096150670A TW96150670A TW200842393A TW 200842393 A TW200842393 A TW 200842393A TW 096150670 A TW096150670 A TW 096150670A TW 96150670 A TW96150670 A TW 96150670A TW 200842393 A TW200842393 A TW 200842393A
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- 230000005855 radiation Effects 0.000 title claims abstract description 23
- 238000006243 chemical reaction Methods 0.000 claims abstract description 86
- 239000000758 substrate Substances 0.000 claims abstract description 81
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 230000015556 catabolic process Effects 0.000 abstract description 2
- 238000006731 degradation reaction Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 10
- 239000010409 thin film Substances 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 240000004282 Grewia occidentalis Species 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20181—Stacked detectors, e.g. for measuring energy and positional information
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20188—Auxiliary details, e.g. casings or cooling
- G01T1/20189—Damping or insulation against damage, e.g. caused by heat or pressure
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
- A61B6/42—Arrangements for detecting radiation specially adapted for radiation diagnosis
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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Description
200842393 九、發明說明： 【發明所屬之技術領域】 本發明係關於排列複數光電變換基板而攝影大面積之放 射線圖像之放射線檢測器。 【先前技術】
作為醫療用之X線診斷裝置，將穿透人體等之χ線像變 換成電氣信號而加以輸出之平面形之x線檢測器已逐漸邁 向實用化。目前，實用化之X線檢測器係包含：在基板上 二維地排列有光電二極體等之複數光電變換元件而形成之 受光部之光電變換基板、及形成在此光電變換基板之受光 部上之閃爍層，藉閃爍層將穿透人體等之x線變換成可見 光，並藉光電變換基板之光電變換元件將該可見光變換成 電氣信號而加讀出。光電變換基板係作成二維地排列薄 膜電晶體（TFT)而形成之電路基板，在此電路基板上，二 維地排列而形成電性連接於薄膜電晶體之光^換元件厂 然而’在胸部之X射線攝影等中需要大面積之χ線檢測 裔，面積愈大時，愈容易發生光電變換基板之製造時之良 率劣化及愈需要光電變換基板之製造裝置之大型化，㈣ 致光電變換基板之製造成本之上漲。 、 作為其解決策略’使用受光面積小於作為X線檢測哭之 全體之受光面積之光電變換元件，將此光電變換基板複數 個排列而大面積化時，即可防止光電變換基板们片之良 率之劣化，降低製造成本。 但’在將複數光電變換基板排列而大面積化之情形，基 128043.doc 200842393 於遍及複數光電變換基板之全體並形成閃燦層時，相鄰之 光电、支換基板彼此之境界部分（銜接部分）會引起解像度下 降之理由’而以透明膜覆蓋含該境界部分之複數光電變換 基板之王體而使表面平坦化，在該透明膜上形成閃燦層 ， （例如，參照日本特開2002-48872號公報之第3頁、圖3)。 【發明内容】 然而，在將複數光電變換基板排列而大面積化，再以透 日月膜覆盍含其境界部分之複數光電變換基板全體而使表面 平i一化在17亥透明膜上开> 成閃燦層之情形，有因透明膜之 口p 刀而 MTF(Modulation Transfer Function ··調變轉移函數） 及靈敏度劣化之問題，並有需花費形成透明膜用之製造成 本及透明膜之費用之問題。 本發明係鑑於此種問題點而完成者，其目的在於提供一 種即使遍及複數光電變換基板之受光部全體並直接形成閃 爍層’藉由規定影響少之條件，亦可防止MTF及靈敏度之 _ 劣化’且可降低製造成本之放射線檢測器。 本發明係包含：複數光電變換基板，其係具有基板及在 此基板上二維地排列複數光電變換元件而形成之受光部； 基台’其係將此等複數光電變換基板排列成受光部相鄰而 載置；及閃爍層，其係遍及前述複數光電變換基板之受光 部全體並直接形成；設形成在前述相鄰之光電變換基板間 之間隙及階差為該等間隙及階差之影響相當於前述光電變 換元件1個分之影響之範圍内。 【實施方式】 128043.doc 200842393 在圖1至圖3中，放射線檢測器丨丨具有例如以玻璃形成之 基台12，在此基台12上經由接著劑13而以平面地互相相鄰 方式排列固定作為複數攝影基板之光電變換基板14。在 此，係在四角形狀之基台12上，以四角形狀之光電變換基 板14四方之邊中之2邊與其他光電變換基板“相鄰之狀 態，排列配置成4塊四角形狀·之光電變換基板14平面地互 相相鄰，而以大面積形成丨個四角形狀之受光面15。
基台12係將相鄰之光電變換基板14間之面方向之間隙s 之尺寸及垂直於面之方向之階差〇之尺寸設定比光電變換 元件之1個受光面之1邊尺寸還小而加以支持。 光電變換基板14具有以玻璃形成之基板18，在此基板18 上，二維地排列形成有薄膜電晶體（TFT)，並在此等各薄 膜電晶體上二維地排列形成有光電二極體等之光電變換元 件。藉此等複數薄膜電晶體及複數光電變換^件等形成將 光受換成電氣h號之受光部19。 光電變換基板14四方之邊中，關於與其他光電變換基板 14相郇之2达’形成文光部19至該等之邊附近，關於剩下 之2邊，於邊與受光部19之間空著間隔。纟空著該間隔之 部分形成連接於各薄膜電晶f 在複數光電變換基板14之受 之電極墊20。 光部19全體上，直接形成將 入射之放射線變換成具有 柱狀結晶構造之閃爍層 受光部19可受光之靈敏度之光之 21 °此閃爍層21之厚度為1〇〇 μιη〜1〇〇〇 μπι，閃爍層 增21之材料多使用施行發光效率良好 之ΤΙ摻雜之Csl。 128043.doc 200842393 在閃爍層21，形成有密封此閃爍層21而從濕氣中加以保 濩之保護膜22。在此保護膜22中，基於防濕保護與閃爍層 21之剝離防止及反射之目的，例如使用以樹脂黏著二氧化 鈦粒子之材料。 但，在將複數光電變換基板14排列而大面積化，在此等 光電變換基·板之受光部19全體並直接形成閃爍層21之情 形，相鄰之光電變換基板14彼此之境界部分（銜接部分）容 易引起解像度下降。 因此，調查是否有即使遍及複數光電變換基板丨4之受光 部19全體並直接形成閃爍層21，影響也較少之條件。 形成於相鄰之光電變換基板14間之間隙s及階差d之影 I在圖像中會受成影（黑線），故將調查該間隙S及階差d之 長度與影（黑線）之長度之關係之結果揭示於表〗及表2。表i 係表示放射線檢測器11之相鄰之光電變換基板14間之間隙 與影（黑線）之長度之關係之表，表2係表示放射線檢測器J i 之相鄰之光電變換基板14間之階差與影（黑線）之長度之關 係之表。 [表1] 光電變換基板之間隙[μιη] 在圖像之影(黑線)之長度[μιη] 50 75 100 150 150 225 200 300 128043.doc 200842393 [表2] 光電變換基板之階差 在圖像之影(黑線)之長度[μιη] 20 ---— 40 30 ----- 60 40 ~' 80 To' ~^ 100 60 ~ 120 ~ 70 ~ 140 80 ^~ 160 180 100 '~^ 200 在圖像之影（黑線）之長度在相當於受光部19之光電變換 兀件之1個份之長度以下時影響最少，故較為理想。即， 在受光部19之光電變換元件之丨個份之長度為15〇 μιη之情 形’在圖像之影（黑線）之長度為150 μιη以下，在受光部J 9 之光電變換元件之1個份之長度為200 μηι之情形，在圖像 之影（黑線）之長度為200 μηι以下。 因此，由表1及表2，可獲得以下之結果：即最好··在圖 像之影（黑線）為150 μιη之情形，間隙S為100 μηι以下，階 差D為75 μηι以下，又，在圖像之影（黑線）為2〇〇 之情 形，間隙S為133 μηι以下，階差D為100 μιη以下。 又，確認MTF之結果，雖確認有在影（黑線）之部分之 MTF之降低，但卻未確認有在影（黑線）以外之部分2Mtf 之降低。此係由於如圖4所示，在影（黑線）之部分，也就是 說，在階差26之部分，可看到閃爍層21之異常成長27，此 128043.doc -10- 200842393 異常成長27之部分影響到MTF之降低之故。 如此，藉由將形成在相鄰之光電變換基板14間之間隙S 及階差D設定於使該等間隙s及階差d之影響相當於光電變 換元件之1個分之影響之範圍内，以規定即使遍及複數光 . 電變換基板14之受光部19全體並直接形成閃爍層21，其影 響也較少之條件。 因此，由於並非如以往般以透明膜覆蓋複數光電變換基 板全體後，再形成閃爍層，而係遍及複數光電變換基板14 之义光。卩19全體並直接形成閃燦層21，故可防止mtf及靈 敏度之劣化，且可降低製造成本。 又，由放射線檢測器丨丨取出之圖像在相鄰之光電變換基 板14間之境界部分（銜接部分）會變成影（黑線），也就是 乂在通過圖像中心之縱橫方向，光電變換元件之1排分 之圖像會變成空白。 因此，放射線檢測器i i放係包含修正機構，其係執行將 參 成為空白之光電變換元件之1排分之圖像，依據其鄰接之 另:排之圖像加以修正之軟體功能。藉此，即使在將複數 光私欠換基板14排列而大面積化之情形，也可獲得晝面| , 空白之圖像。 — ， （產業上之可利用性） :據：：明，可將形成在相鄰之光電變換基板間之間隙 及I5自差，又疋於使該等間隙及階差之影響相當於光電變換元 件之1個'之影響之範圍内，藉此，即使遍及複數光電變 換基板之5:光部全體並直接形賴㈣，也可規定影響少 128043.doc 200842393 之條件。因此，遍及複數光電變換基板之受光部全體並可 直接形成閃爍層，防止MTF及靈敏度之劣化，且可降低製 造成本。 【圖式簡單說明】 圖1係本發明之一實施型態之放射線檢測器之一部分之 剖面圖。 • 圖2係該放射線檢測器之剖面圖。 圖3係在該放射線檢測器之基台配置複數光電變換基板 之狀恶之正面圖。 圖4係形成於該放射線檢測器之相鄰之光電變換基板上 之閃爍層之顯微鏡照片圖。 【主要元件符號說明】 11 放射線檢測器 12 基台 13 接著劑 14 光電變換基板 15 受光面 18 基板 19 受光部 20 電極塾 21 閃燦層 22 保護膜 26、D 階差 27 異常成長 S 間隙 128043.doc -12-
Claims (1)
- 200842393 十、申請專利範圍： 1. 一種放射線檢測器，其特徵在於包含： 複數光電變換基板，其係具有基板及在此基板上二維 地排列複數光電變換元件而形成之受光部； 基台，其係將此等複數光電變換基板排列成受光部相 鄰而載置；及 閃爍層，其係遍及前述複數光電變換基板之受光部全 體而直接形成；前述基台係前述相鄰之光電變換基板間之沿著此等之 面之方向之間隙尺寸及垂直於此等之面之方向之階差尺 寸分別設定比前述光電變換元件之1個受光面之〗邊尺寸 還小而加以支持。 2.如請求項丨之放射線檢測器，其中相鄰之光電變換基板 間之間隙為133 μιη以下，且相鄰之光電變換基板間之階 差為100 μιη以下。 3.如請求項1或2之放射線檢測器，其中閃爍層之厚度為 100 μιη〜1000 〇 其中包含包覆閃爍層而密 4.如請求項1之放射線檢測器 封之保護膜。 5. 包含修正機構，其係 之間隙及階差所影響 據鄰接於其之其他排 如請求項1之放射線檢測器，其中 將相當於受相鄰之光電變換基板間 之光電變換元件之1排分之圖像依 之圖像加以修正。 6·如請求項〗之放射線檢測器 其中對於相鄰之光電變換 128043.doc 200842393 像上之影尺寸為1,5倍以 基板間之間隙尺寸，形成於圖 下。 如請求項丨之放射線檢測器’其中對於相鄰之光電變換 基板間之階差尺寸，形成於圖像上之影尺寸為2倍以 下。 一種放射線檢測器，其特徵在於包含： 複數光電變換基板，其係具有基板及在此基板上二維 地排列複數光電變換元件而形成之受光部；基台’其係將此等複數光電變換基板排列成受光部相 鄰而載置；及 閃爍層’其係遍及前述複數光電變換基板之受光部全 體而直接形成； 形成在前述相鄰之光電變換基板間之間隙及階差係該 等間隙及階差之影響設定為相當於前述光電變換元件1 個分之影響之範圍内。128043.doc
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| EP (1) | EP2128651A4 (zh) |
| JP (1) | JPWO2008078702A1 (zh) |
| KR (1) | KR20080114695A (zh) |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8873713B2 (en) | 2009-09-18 | 2014-10-28 | Hamamatsu Photonics K.K. | Radiation detecting device |
| TWI470261B (zh) * | 2011-06-28 | 2015-01-21 | Toshiba Kk | Radiation detector and manufacturing method thereof |
| US8964939B2 (en) | 2008-11-11 | 2015-02-24 | Hamamatsu Photonics K.K. | Radiation detection device, radiation image acquiring system, radiation inspection system, and radiation detection method |
| US8981310B2 (en) | 2009-09-18 | 2015-03-17 | Hamamatsu Photonics K.K. | Radiation detecting device |
| US9329301B2 (en) | 2009-09-18 | 2016-05-03 | Hamamatsu Photonics K. K. | Radiation detecting device |
| TWI595256B (zh) * | 2014-10-30 | 2017-08-11 | Shimadzu Corp | Radiographic detector |
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| EP2359161B1 (en) * | 2008-11-21 | 2017-05-31 | Trixell | Assembly method for a tiled radiation detector |
| JP2013152160A (ja) * | 2012-01-25 | 2013-08-08 | Canon Inc | 放射線撮像装置及び放射線撮像システム |
| US9012859B2 (en) * | 2012-05-18 | 2015-04-21 | General Electric Company | Tiled X-ray imager panel and method of forming the same |
| JP6077787B2 (ja) * | 2012-08-22 | 2017-02-08 | キヤノン株式会社 | 放射線撮像装置及び放射線撮像システム |
| JP6671839B2 (ja) * | 2014-10-07 | 2020-03-25 | キヤノン株式会社 | 放射線撮像装置及び撮像システム |
| JP7470631B2 (ja) * | 2020-12-23 | 2024-04-18 | 浜松ホトニクス株式会社 | 放射線検出器、放射線検出器の製造方法、及びシンチレータパネルユニット |
| JP2022099513A (ja) * | 2020-12-23 | 2022-07-05 | 浜松ホトニクス株式会社 | 放射線検出器、放射線検出器の製造方法、及びシンチレータパネルユニット |
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| US6792159B1 (en) * | 1999-12-29 | 2004-09-14 | Ge Medical Systems Global Technology Company, Llc | Correction of defective pixels in a detector using temporal gradients |
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| JP2003017676A (ja) * | 2001-04-27 | 2003-01-17 | Canon Inc | 放射線撮像装置およびそれを用いた放射線撮像システム |
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- 2007-12-21 KR KR1020087020845A patent/KR20080114695A/ko not_active Application Discontinuation
- 2007-12-21 WO PCT/JP2007/074721 patent/WO2008078702A1/ja active Application Filing
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- 2007-12-21 CN CNA2007800067122A patent/CN101389979A/zh active Pending
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8964939B2 (en) | 2008-11-11 | 2015-02-24 | Hamamatsu Photonics K.K. | Radiation detection device, radiation image acquiring system, radiation inspection system, and radiation detection method |
| US9594031B2 (en) | 2008-11-11 | 2017-03-14 | Hamamatsu Photonics K.K. | Radiation detection device, radiation image acquiring system, radiation inspection system, and radiation detection method |
| US10393676B2 (en) | 2008-11-11 | 2019-08-27 | Hamamatsu Photonics K.K. | Radiation detection device, radiation image acquiring system, radiation inspection system, and radiation detection method |
| US8873713B2 (en) | 2009-09-18 | 2014-10-28 | Hamamatsu Photonics K.K. | Radiation detecting device |
| US8981310B2 (en) | 2009-09-18 | 2015-03-17 | Hamamatsu Photonics K.K. | Radiation detecting device |
| US9329301B2 (en) | 2009-09-18 | 2016-05-03 | Hamamatsu Photonics K. K. | Radiation detecting device |
| TWI470261B (zh) * | 2011-06-28 | 2015-01-21 | Toshiba Kk | Radiation detector and manufacturing method thereof |
| TWI595256B (zh) * | 2014-10-30 | 2017-08-11 | Shimadzu Corp | Radiographic detector |
Also Published As
| Publication number | Publication date |
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| KR20080114695A (ko) | 2008-12-31 |
| US20100019162A1 (en) | 2010-01-28 |
| CN101389979A (zh) | 2009-03-18 |
| JPWO2008078702A1 (ja) | 2010-04-22 |
| EP2128651A1 (en) | 2009-12-02 |
| EP2128651A4 (en) | 2017-03-22 |
| WO2008078702A1 (ja) | 2008-07-03 |
| US7772562B2 (en) | 2010-08-10 |
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