TW200841038A

TW200841038A - Heat-resistant light-shading film and production method thereof, and diaphragm or light intensity adjusting device using the same

Info

Publication number: TW200841038A
Application number: TW097103197A
Authority: TW
Inventors: Yoshiyuki Abe; Katsushi Ono; Yukio Tsukakoshi
Original assignee: Sumitomo Metal Mining Co
Priority date: 2007-04-10
Filing date: 2008-01-29
Publication date: 2008-10-16
Also published as: CN101285900A; JP2008281977A; KR20080092242A; JP5228397B2

Abstract

A heat-resistant light-shading film having high light shading capacity, high heat resistance, high sliding characteristics, low surface gloss and high electro conductivity, and useful for optical device parts such as shutter blades or diaphragm blades for diaphragm blades of lens shutter and the like for digital cameras and digital video cameras and diaphragm blades of light intensity adjusting device for projectors, and a method for producing the same. The heat-resistant light-shading film is a film comprising a resin film substrate (A) having a heat resistance of 155 DEG C or higher and a light-shading layer (B) of crystalline metal carbide film (MeC) formed on one side or both sides of the resin film substrate (A), characterized in that the light-shading layer (B) has a thickness of 100 nm or more and a surface roughness of 0.1 to 2.1μm (arithmetic average height Ra), and content of carbon element (C) in the metal carbide film (MeC) is 0.3 or more in atomic number ratio to the total metal elements (Me).

Description

200841038 九、發明說明：【發明所屬之技術領域】本發明涉及耐熱遮光薄膜及其製造方法、以及採用它的光圈或者光量調節裝置，更具體地說，涉及作爲數位照相機、數位攝影機的鏡頭快門等的快門葉片或光圈葉片、汽車所裝載的監視器鏡頭單元中的固定光圈或投影機的光量調節裝置的光圈葉片等光學儀器部件使用、遮光性、耐熱性、滑動性、低光澤性、導電性優良的耐熱遮光薄膜及其製造方法、以及採用它的光圈或者光量調節裝置。【先前技術】目前，由於快門速度的高速化，在極短時間內進行動作和停止，因此照相機用的快門葉片和光圈葉片要求輕量化以及具有高滑動性。並且，由於它們是擋在膠捲等感光材料、CCD等的攝影元件前面以遮光的部件，因而最起碼要具有遮光性。另外，由於光學儀器用的葉片是多片相互重疊而進行動作的，因而爲了順暢地工作必須具有潤滑性。並且，爲了防止各葉片之間漏光，要求表面的反射率低。根據使用環境，存在照相機內部出現高溫的情況，因而要求具有耐熱性。另外，作爲展示、家庭影院等影像觀賞用投影裝置的液晶投影機的光量調節用光圈葉片使用的遮光薄膜，也要求與數位照相機、數位攝影機具有同樣的性能，特別是對於耐熱性，要求比照相機的性能更高。通常，上述遮光薄膜以聚對苯二甲酸乙二酯（PET)等塑 i 200841038 膠薄膜或SUS、SK材料、A1等金屬薄膜作爲基板而應用。在照相機中’當使用基材爲金屬性的遮光薄膜作爲快門葉片、光圈葉片使用時，在葉片部件開關時，金屬板之間存在摩擦而產生很大的噪音。另外，在液晶投影機中，在圖像變化時爲了緩和各圖像的亮度變化，需要高速地移動葉片，導致葉片之間反復出現摩擦噪音。此外，爲了降低這種噪音，要使葉片低速運動，此時，若不對圖像的變化另外地進行光量調節，則會出現圖像不穩定的問題。 ^ 從上述問題和輕量化的角度出發，在近年來遮光薄膜的構成中，將塑膠薄膜用於基板已成爲主流。另外，從產生灰塵性的角度出發，還要求具有導電性。由上述可知，遮光薄膜的必要性能包括高遮光性、耐熱性、低光澤性、滑動性、導電性、低產生灰塵性。爲滿足這些遮光薄膜的性能，一直以來提出了採用各種材料、薄膜構造的方案。例如，專利文獻1中公開了一種遮光薄膜，從遮光性、低光澤性、導電性的角度出發，爲了吸收從燈光源等發出 ® 的光，將碳黑、鈦黑等導電性黑色微粒浸含在聚對苯二甲酸乙二酯（PET)膜等樹脂薄膜中，使其具有遮光性和導電性，並對遮光薄膜的一面或兩面進行糙化處理，使其具有低光澤性。專利文獻2中公開了一種遮光薄膜，其在樹脂薄膜上塗敷具有遮光性和導電性的含碳黑等黑色顏料、潤滑劑和去光劑的熱固化性樹脂層，使其具有遮光性、導電性、潤滑性、低光澤性。 -7- 200841038 專利文獻3中公開了在鋁合金等金屬製葉片材料表面上形成硬質碳膜的遮光部件。專利文獻4中公開了一種遮光葉片構造，其爲了提高遮光葉片的剛性，對塑膠基材兩面採用含碳纖維的熱固化性樹脂的預浸處理片進行強化。遮光薄膜作爲數位照相機、數位攝影機、液晶投影機等光學儀器用遮光葉片已被廣泛使用。近年來，對於液晶投影機來說，對在起居室這樣的明亮環境下也能夠欣賞到鮮豔、高對比的影像這種高畫質化的要求日益提高。這樣，爲了畫質的高亮度化，就要提高燈光源的輸出功率，因而就出現光量調節用的光圈裝置內溫度升高的傾向。由於對調節光量的遮光薄膜照射了大功率的光，形成了使遮光薄膜容易熱變形的環境。遮光薄膜的基材，例如以聚對苯二甲酸乙二酯（PET) 作爲基材的遮光薄膜，由於比重小而被廣泛使用，然而當燈光源輸出功率大時，由於聚對苯二甲酸乙二酯（PET)熱變形溫度低，拉伸彈性率等機械強度小，因而會出現移動過程中或者製動時產生的振動或撞擊等導致遮光葉片變形的可能性。此外，爲了使遮光薄膜具有低光澤性和滑動性，採用噴砂法進行糙化處理。這種處理進一步使入射光散射而使表面的光澤性下降，具有提高可視性的效果。藉由上述處理，被認爲遮光薄膜即使相互接觸，由於遮光薄膜之間接觸面積沒有增大，因而也可以防止滑動性降低。 200841038 在數位照相機、數位攝影機、液晶投影機中，遮光薄膜作爲快門葉片、光圈葉片等必須多片鄰接並重合而使用，因而對於採用有機成分遮光材料、潤滑劑、去光劑的遮光薄膜來說，數位照相機、數位攝影機和液晶投影機所處的溫度、濕度這些使用環境顯得更加惡劣。汽車所裝載的監視器用鏡頭單元中使用的固定光圏’即使在1 〇〇〜 1 5 5 °C的高溫下也可以使用。特別是對於液晶投影機，如上所述，由於近年來隨著圖像的高亮度化而使得燈光源大功率化，裝置（光量調節用裝置、光圈裝置）內的溫度上升至 2 00 °C左右。在如此惡劣的環境下，若使用上述以前的遮光薄膜，會發生變形、變色等，在耐久性方面不是較佳，在實用上存在問題。另外，由於遮光薄膜在1 5 5 °C以上的高溫環境下熱變形，即使是上述表面上具有微細凹凸構造的遮光薄膜’熱變形也很大，遮光薄膜之間相互接觸，使其不能進行高速運動，不規則摩擦程度增大，導致滑動性、光澤性劣化等，出現數位照相機、數位攝影機、液晶投影機不能發揮其原來的功能的可能性。另外，雖然上述基材塑膠薄膜的糙化處理爲在基材塑膠薄膜上形成微細的凹凸，具有提高基材與該基材上的塗膜之間的粘合力，以及降低表面光澤性的效果’然而’在採用噴砂法時，由於薄膜表面的粗糙度依賴於噴射材料的材質、粒度、噴射壓力等，雖然粒徑大的噴射材料可以通過水洗或者刷洗等清洗從薄膜表面除去，但粒徑不足1㈣ 200841038 的小顆粒即使在洗滌後薄膜上也會有相當來，不能被完全除去。若殘留噴射材料，則處的高溫環境下’由於噴射材料與薄膜上形遮光薄膜等膜的熱膨脹係數不同，出現熱應離下來’以及噴射材料從薄膜上脫離下來，產生不利影響’導致不能發揮其原來的功能 [專利文獻π日本特開平1 一 1 20 5 03號 [專利文獻2]日本特開平4— 9802號公 _ [專利文獻3 ]日本特開平2 一 1 1 6 8 3 7號 [專利文獻4]日本特開2〇〇〇— 75 3 53號【發明內容】因此’本發明的目的是提供一種耐熱遮爲處於高溫下的液晶投影機的光量調節裝置加工時處於高溫下的數位照相機的快門葉片用，在基材薄膜表面上具有微細的凹凸構造不會出現滑動性、光澤性劣化，也不會發刍具有優良的耐久性，不會發生膜脫離以及D| 導電性優良。本發明者們發現，爲解決上述現有技祠面上具有微細凹凸的耐熱性樹脂薄膜作爲3 1 55 °C以上耐熱性的樹脂薄膜（A)，在使該樹表面溫度維持在 1 5 5 °C以上的狀態下，以'1 特定厚度的結晶性金屬碳化物膜（在說明書1 爲MeC)作爲遮光膜（B)，這樣，可以獲得即一部分殘留下在遮光薄膜所成的金屬合金力差而使膜脫對其周圍部件的問題。公報報公報公報光薄膜，其作用葉片、或在或固定光圈使，該遮光薄膜變形、變色， :射材料脫落， ί的問題，以表 :材，採用具有脂薄膜基材（Α) |射法形成具有戸，有時也記載吏處於1 5 5 °C以 -10- 200841038 上的高溫環境下，甚至根據基材的種類處於2 0 0 °C左右的高溫環境下也不會變形、可保持其特性（遮光性、低光澤性、滑動性、色度、低反射性）的耐熱遮光薄膜，其可以作爲數位照相機、數位攝影機、液晶投影機等的光圈部件使用’從而完成了本發明。即，根據本發明的第1項發明，提供一種耐熱遮光薄膜，其特徵包括具有155°C以上耐熱性的樹脂薄膜基材（A) 和在樹脂片基材（A) —面或兩面上形成的結晶性金屬碳化物膜（MeC)之遮光膜（B)的耐熱遮光薄膜，遮光膜（B)厚度爲 lOOnm以上，表面粗糙度爲 0.1〜2.1μηι(算術平均高度 Ra)，且金屬碳化物膜（MeC)中碳元素（C)相對於全部金屬元素（Me)的原子數比（C/Me)爲0·3以上。另外，根據本發明的第2項發明，提供一種耐熱遮光薄膜，其特徵在於第丨項發明中，樹脂薄膜基材（Α)由從聚萘二甲酸乙二醇酯（PEN)、聚醯亞胺、芳族聚醯胺、聚苯硫醚或聚醚颯中選出的一種以上構成。另外，根據本發明的第3項發明，提供一種耐熱遮光薄膜，其特徵在於第1或第2項發明中，樹脂薄膜基材（A) 的耐熱性爲2 〇 0 °C以上。另外，根據本發明的第4發明，提供一種耐熱遮光薄膜，其特徵在於第1〜3項發明中，樹脂薄膜基材（a )的厚度爲5〜200μιη。另外，根據本發明的第5項發明，提供一種耐熱遮光薄膜，其特徵在於第1〜4項發明中，樹脂薄膜基材（Α)的 200841038 表面粗糙度爲0.2〜2.2μιη(算術平均高度Ra)。另外，根據本發明的第6項發明，提供一種耐熱遮光薄膜，其特徵在於第1〜5項發明中，遮光膜（㈨的厚度爲 110〜550nm 〇根據本發明的第7項發明，提供一種耐熱遮光薄膜，其特徵在於第1〜6項發明中，金屬碳化物膜（Me C)以從碳化矽、碳化鈦、碳化鋁、碳化鈮、碳化鎢、碳化鉬、碳化釩、碳化鉅、碳化鉻或碳化給中選出的一種以上材料作爲 ⑩主成分。另外’根據本發明的第8項發明，提供一種耐熱遮光薄膜，其特徵在於第1〜7項發明中，金屬碳化物膜（MeC) 中碳元素（C)相對於全部金屬元素（Me)的原子數比（C/Me) 爲0.5以上。另外，根據本發明的第9項發明，提供一種耐熱遮光薄膜，其特徵在於第1〜8項發明中，金屬碳化物膜（MeC) 中含氧量（〇)以相對於全部金屬元素（Me)的氧元素（〇)的原 ®子數比（O/Me)計爲〇·5以下。根據本發明的第1 0項發明，提供一種耐熱遮光薄膜，其特徵在於第1〜9項發明中，遮光膜（B)在3 8 0〜78 Onm波長處的光反射率爲10%以下。另外，根據本發明的第1 1項發明，提供一種耐熱遮光薄膜其特徵在於第1〜1 0項發明中，作爲遮光性指標的光密度在380〜780 nm波長處爲4以上。另外，根據本發明的第1 2項發明，提供一種耐熱遮光 -12- 200841038 薄膜，其特徵在於第1〜n任一項發明中，在樹脂薄膜基材（A)的兩面上形成組成和膜厚相同的金屬碳化物膜 (MeC)。另一方面，根據本發明的第1 3項發明，其係提供一種耐熱遮光薄膜的製造方法，其特徵在於第1〜12項發明所述的包括具有155°C以上耐熱性的樹脂薄膜基材（A)和作爲遮光膜（B)而在樹脂薄膜基材（A)—面或兩面上形成的金屬碳化物膜（MeC)的耐熱遮光薄膜的製造方法中，將表面粗糙度爲0.2〜2.2μιη(算術平均高度Ra)的樹脂薄膜基材（A)置於濺射裝置中，採用金屬碳化物靶，在惰性氣體環境下通過濺射法，在該樹脂薄膜基材（A)上形成厚度爲lOOnm以上、表面粗糙度爲0.1〜2.1 μπι(算術平均高度Ra)、且金屬碳化物膜（MeC)中碳元素（C)相對於全部金屬元素（Me)的原子數比（C/Me)爲0.3以上的結晶性金屬碳化物膜（MeC)。另外’根據本發明的第1 4項發明，提供一種耐熱遮光薄膜的製造方法，其特徵在於第〗3項發明中，將形成了金屬碳化物膜（MeC)的耐熱遮光薄膜進一步置於濺射裝置中’藉由濺射在樹脂薄膜基材（A)的沒有形成金屬碳化物膜 (MeC)的一面上形成金屬碳化物膜（MeC)。根據本發明的第15項發明，提供一種耐熱遮光薄膜的製造方法’其特徵在於第13或第14項發明中，遮光膜（B) 成膜時的濺射氣壓爲0.2〜l.〇Pa。另外’根據本發明的第1 6項發明，提供一種耐熱遮光薄te的製造方法，其特徵在於第i 3〜1 5任一項發明中，遮 -13- 200841038 光膜（B)成膜時樹脂薄膜基材（A)的表面溫度爲180°C以上。另外，根據本發明的第1 7項發明，提供一種耐熱遮光薄膜的製造方法，其特徵在於第13〜16任一項發明中，樹脂薄膜基材（A)捲成筒狀設置在濺射裝置的薄膜輸送部上，在由捲出部捲至捲取部時，以濺射法進行成膜。另外，根據本發明的第1 8項發明，提供一種耐熱遮光薄膜的製造方法，其特徵在於第1 3〜1 7任一項發明中，樹脂薄膜基材（A)捲成筒狀設置在濺射裝置的薄膜輸送部 ^ 上，在由捲出部輸送至捲取部時，以濺射法進行成膜，成膜時樹脂薄膜基材（A)不會被冷卻，在成膜室內成懸浮狀態而進行成膜。另一方面，根據本發明的第1 9項發明，提供將第1〜 1 2任一項發明中的耐熱遮光薄膜進行加工所製得的耐熱性優良的光圈。另外，根據本發明的第20項發明，提供採用第1〜1 2 任一項發明中的耐熱遮光薄膜的光量調節裝置。 A 本發明的耐熱遮光薄膜，由於在具有算術平均高度Ra 爲0.2〜2.2 μηι的表面粗糙度的耐熱性樹脂薄膜基材上，形成特定厚度的金屬碳化物膜，因而可以實現具有低光澤性、低反射性、導電性的耐熱遮光薄膜。並且，該金屬碳化物膜由於以濺射法成膜，與由以前塗膜步驟所製得的遮光薄膜相比，可以形成緻密的表面狀態，表面的耐磨損性、耐摩擦性更優異。而且，本發明的耐熱遮光薄膜由於在具有1 5 5 °C以上耐熱性的樹脂薄膜基材上形成作爲遮光膜的 14· 200841038 結晶性金屬碳化物膜，因而該金屬碳化物材料在15 5〜 3 00 °C的高溫環境下或高濕度環境下不容易被氧化，遮光性不會發生變化，因此，與以前採用容易氧化的金屬膜作爲遮光膜的耐熱遮光薄膜相比，耐熱性更優異。並且’本發明的耐熱遮光薄膜由於具有金屬碳化物膜以耐熱性樹脂薄膜爲中心的對稱型薄膜構造，因而在成膜時不會因膜應力而發生遮光薄膜變形，生產性優良。另外，藉由本發明金屬碳化物膜的濺射法成膜條件最佳化，可以使上述金屬碳化物膜形成緻密的膜，由於該緻密的最表層膜，使得即使處於1 5 5〜3 0 0 °C的高溫環境下，採用該耐熱遮光薄膜的遮光葉片在動作時也不會出現膜的脫離，因此，在對基材薄膜進行糙化處理，具體地說藉由噴砂法進行膜表面處理時，不會發生與其伴隨的附著殘留的噴射材料脫離的情況。本發明的光量調節裝置採用由上述耐熱遮光薄膜加工製作的遮光葉片’與以前採用由在金屬箔板上施加耐熱塗料的耐熱遮光薄膜製作的遮光葉片的光量調節裝置相比，由於遮光葉片以樹脂薄膜作爲基材進行製作而被輕量化，因而裝載在光圈葉片等上時可以提高滑動性，並且可以使驅動電機小型化，有利於降低成本。因此，本發明的耐熱遮光薄膜特別可以作爲要求具有耐熱性的液晶投影機的光量調節裝置的光圈葉片部件或汽車所裝載的監視器鏡頭單元內的固定光圈部件使用。並且，也可以作爲數位照相機、數位攝影機的快門葉片等使 -15- 200841038 用，因而在工業上有用。【實施方式】以下’參照附圖對本發明的耐熱遮光薄膜及其製造方法、用於光量調節裝置和光圈的用途進行說明。 1.耐熱遮光薄膜本發明的耐熱遮光薄膜的特徵在於：它是包括具有 155°C以上耐熱性的樹脂薄膜基材（A)和在樹脂薄膜基材（A) 一面或兩面上形成的結晶性金屬碳化物膜（Me C)之遮光膜 (B)的耐熱遮光薄膜，遮光膜（B)厚度爲100 nm以上，表面粗糙度爲〇·1〜2·1μιη(算術平均高度Ra)，且金屬碳化物膜 (Me C)中碳元素（C)相對於全部金屬元素（Me)的原子數比 (C/Me)爲 0·3 以上。藉由形成具有如上所述表面粗糙度的遮光膜，或者藉由在該遮光膜表面上覆蓋金屬碳化物，使該表面具有同樣的表面粗糙度，可以實現耐熱遮光薄膜的低光澤性、低反射性，當作爲數位攝影機固定光圈或機械快門裝置光圈的葉片，或者液晶投影機光量光圈裝置的葉片部件使用時，光學系統中可避免出現由反射光產生的散射光。第1圖和第2圖是演示本發明的這種耐熱遮光薄膜構成的示意圖。本發明的耐熱遮光薄膜包括作爲基材的樹脂薄膜基材1、其表面上形成的金屬碳化物膜2。並且，金屬碳化物膜 2的表面粗糙度爲〇.1〜2.1 μπι(算術平均高度 Ra)’更佳爲 0.2〜2.0μιη，最佳爲 0.3〜1·9μπι。若不足 0·1μιη’則從低光澤性角度考慮是不佳的，另外若超過 -16- 200841038 2.1 μ m，則從容易產生表面缺陷的角度考慮是不佳的。上述金屬碳化物膜2如第1圖所示，也可以在樹脂薄膜基材的一面上形成，但優選如第2圖所示在兩面上形成爲佳。當在兩面上形成時，更佳爲各面的膜的材質和厚度相同，使其成爲以樹脂薄膜基材爲中心的對稱結構。基板上形成的薄膜由於對基板產生應力，因而成爲變形的主要因素。應力導致的變形有時在剛剛成膜之後的耐熱遮光薄膜中也會發現，特別是若加熱至155〜3 00 °C程度，變形很 ® 容易顯著地增大。但是，藉由如上所述使基板兩面上形成的金屬碳化物膜的材質、厚度相同，使其成爲以基板爲中心的對稱結構，即使在加熱條件下，也很容易實現維持應力的均衡，獲得平坦的耐熱遮光薄膜。 (A)樹脂薄膜基材作爲本發明耐熱遮光薄膜中使用的樹脂薄膜基材 (A)，只要是具有1 5 5 °C以上的耐熱性的耐熱樹脂薄膜基材，則對其沒有特別的限製，較佳由從聚萘二甲酸乙二醇 ^ 酯、聚醯亞胺、芳族聚醯胺、聚苯硫醚或聚醚楓中選出的一種以上構成的材料。其中聚萘二甲酸乙二醇酯的耐熱性約爲2 0 0 °C，可以在1 5 5〜2 0 0 °C的環境下使用，非常廉價’ 作爲工業材料有用。此外，聚醯亞胺薄膜、芳族聚醯胺、聚苯硫醚或聚醚颯的耐熱性爲200°C以上，在200 °C以上的環境下也可以使用。特別是聚醯亞胺的最大耐熱溫度高到 3 00°C以上，是最佳的薄膜。另外，作爲基材使用的樹脂薄膜，可以是由透明樹脂 -17- 200841038 構成的，也可以由混煉了顏料的著色樹脂構成，具有1 5 5 °C以上的耐熱性。這裏，所謂具有1 5 5 性的薄膜，是指玻璃化轉變溫度爲1 5 5 °C以上的且對於不存在玻璃化轉變溫度的材料，在i 5 5。〇度下不會變質。樹脂材料的材質，當考慮量產性是能夠藉由濺射法進行輥塗的具有撓性的材料。樹脂薄膜基材的厚度較佳爲5〜200 μπι的範爲10〜1 50μιη，最佳爲20〜125μιη。因爲，當小於 ® 則操作性很差，且薄膜容易產生損傷和折縫等陷，當大於200μιη時，不能在實行小型化的光圈量調節用裝置中裝入多塊遮光葉片。另外，作爲本發明的耐熱遮光薄膜基材的樹其表面算術平均高度Ra較佳爲0.2〜2·2μπι、特fg 〜2· 1 μπι的微細凹凸結構。若Ra小於0.2 μηι，則與薄膜表面上形成的金屬碳化物膜的密合性，並獲得足夠低的光澤性和低反射性。另外，若Ra超ί 則薄膜表面的凹凸過大，凹部不能形成金屬碳化要覆蓋薄膜表面以獲得充分的遮光性，則金屬碳厚度變厚，成本提高，因而不佳。算術平均高度，也稱爲算術平均粗糙度，是曲線上只取其平均線方向上的基準長度，將從該的平均線至測定曲線的偏差的絕對値合計平均所樹脂薄膜表面上的凹凸通過對薄膜表面進行而形成。例如，可以通過奈米印刷加工或採用噴但是必須以上耐熱薄膜，並以上的溫時，需要圍，更佳 5 μπι 時，的表面缺裝置或光脂薄膜， I具有0.3 不能實現且也不能邑 2 · 2 μ m，物膜，若化物膜的從粗糙度取樣部分得的値。表面處理射材料的 -18- 200841038 縫化處理進行加工形成規定的表面凹凸結構。當進行糙化 ®理時’通常是噴射材料採用砂子的糙化處理加工，但噴射材料並不局限於砂子。可以一邊輸送薄膜，一邊在薄膜表面上形成凹凸’然而由於最佳Ra値的凹凸依賴於糙化處理中薄膜的輸送速度、噴射材料的種類和大小，因而要使這些條件最優化而進行表面處理，以使薄膜表面的算術平均高度Ra値爲〇.2〜2.2 μιη。糙化處理後的薄膜，洗滌除去噴射材料後’進行乾燥。當在薄膜兩面上形成金屬碳化物膜時，要對薄膜的兩面進行糙化處理。 (Β)遮光膜（金屬碳化物膜）本發明的耐熱遮光薄膜在155 °C的高溫環境下也具有足夠的耐熱性。這除了樹脂薄膜基材具有耐熱性以外，還有賴於遮光性金屬碳化物膜也具有耐熱性。通常由於金屬膜若被氧化則透明度增加，因而當採用金屬膜作爲遮光膜使用時，必須使其具有耐氧化性。本發明的耐熱遮光薄膜中所用的遮光膜材料，與通常的金屬膜相比，採用了耐氧化性更優良的金屬碳化物膜。本發明的金屬碳化物膜（M e C )，較佳以從碳化矽、碳化鈦、碳化鋁、碳化鈮、碳化鎢、碳化鉬、碳化釩、碳化鉅、化銷和碳化鈴構成的群組中選出的一種以上材料作爲主成分。這些金屬碳化物膜與以前的金屬膜（矽、鈦、鋁、鈮、鎢、鉬、釩、鉅、锆、給）相比，不僅在1 5 5〜3 0 0 °C時具有耐氧化性，而且由於其爲硬質材料，耐磨損性也更優良。相比之下，當使用以前的金屬膜（矽、鈦、鋁、鈮、鎢、鉬、 -19- 200841038 釩、鉅、锆、給）作爲遮光膜時，由於在上述高溫下沒有足夠的耐氧化性和硬質性，因而必須在其表面上施加作爲保護膜的具有耐氧化性和硬質性的其他材料（金屬氧化物和 D L· C等），使結構變得複雜了，成本也提高了。此外，就本發明中使用的金屬碳化物膜（Me C)的組成而言’膜中碳元素（C)相對於全部金屬元素（Me)的比率，C/Me 原子數比爲0 · 3以上，較佳爲〇 . 5以上，特佳爲0.7以上。因爲’若C/Me原子數比不足〇.3，則在155〜300 °C的高溫 ® 加熱下不能獲得耐氧化性。作爲樹脂薄膜上形成的遮光膜的金屬碳化物膜，必須是晶體膜。因爲晶體膜可對樹脂薄膜基板發揮牢固的密合性。若爲非晶體膜，則在高溫環境下使用時，會發生膜的結晶化。若發生膜的結晶化，則不僅會引起變色，而且由於發生結晶化的部分產生膜應力，使耐熱遮光薄膜的應力失衡，導致容易發生變形，因而很成問題。金屬碳化物（Me C)膜，由於是其金屬成分（Me)晶體中可 ® 侵入碳元素（C)的材料，與其金屬成分（Me)的金屬膜相比，難以發生結晶化。並且因爲通過向金屬成分的晶體中侵入碳元素，使各元素間的鍵的共價鍵性的比率增大，與不含碳元素的金屬鍵性構成的金屬材料相比，結晶化更難以發生。若是可產生耐熱性的C/Me原子數比爲〇·3以上的膜，則特別難以發生結晶化。另外，金屬碳化物膜是否爲晶體膜’可以通過X射線繞射測定調查有無繞射峰，或者透過 ΤΕΜ觀察膜截面調查有無晶粒而進行評價。若結晶度高， -20- 200841038 則存在如第6圖的明確的繞射峰。另外，如上所述，本發明的金屬碳化物膜（Me C)的表面粗糙度必須爲0.1〜2.1μιη(算術平均高度Ra)。更佳爲0.2 〜2.0 μ m，最佳爲〇 . 3〜1 . 9 μ m。若不足0.1 μ m，則從低光澤性角度考慮是不佳的，另外若超過2.1 μηι，則從容易產生表面缺陷的角度考慮是不佳的。另外，本發明的金屬碳化物膜（MeC)的厚度爲1 10〜 550nm，較佳爲110〜400nm，更佳爲110〜300nmo若膜厚 ® 不足1 1 〇nm，則會發生膜透光而不能獲得充分的遮光功會g，因此是不佳的。然而，若膜厚度厚則遮光性好，但若超過5 5 Orim，則材料成本和成膜時間增加，導致製造成本提高，並且膜的應力也增大，導致容易變形。通過使金屬碳化物膜爲如上所述的厚度，可以實現充分的遮光性、低膜應力和低製造成本。此外，形成這種金屬碳化物膜，必須表面粗糙度Ra 爲0.1〜2.1 μιη。這樣，可以使3 8 0〜7 80nm波長處的光反 ^ 射率降低到1 0%以下。遮光性較佳光密度爲4以上，或者透光率爲1%以下，特佳爲0%。另外，上述金屬碳化物膜中也可以含有氮元素。金屬碳化物膜中氮元素的引入，可以通過在金屬碳化物膜成膜時的濺射氣體中導入含氮氣的添加氣體進行濺射成膜而實現，但也可以不使用上述添加氣體，通過使靶中含氮元素，也可以引入這些元素。此外，爲了保持與樹脂薄膜的高密合性和高遮光性， -21 - 200841038 本發明中使用的金屬碳化物膜中較佳爲儘量不含氧氣。但是，靶內所含的氧氣或成膜室內殘留的氧氣等在成膜時攝入到金屬膜的一部分或全體中，若不損害金屬性、高遮光性和與樹脂薄膜的高密合性，則也沒有關係。這種金屬碳化物膜（MeC)中不可避免含有的氧氣的含量，相對於全部金屬元素（Me)的含氧元素（0)的比率，〇/Me 原子數比較佳爲0.5以下，更佳爲0. 1以下。這是因爲，所含的氧元素（0)若O/Me原子數比超過0.5,則在380〜780 nm ^ 波長處透光率會增大（光密度變小），導致不能獲得充分的遮光性能。若O/Me原子數比爲0.5以下，則即使是1 1 〇〜 4 OOnm以下的薄膜厚度，也可以發揮充分的遮光性，從而實現製造成本的降低。但是，即使在Ο /M e原子數比超過 0.5的情況下，若爲0.8以下，通過使膜厚度增加到400〜 550nm，也會具有足夠的遮光性。金屬碳化物膜中的 O/Me原子數比可以通過例如 X P S ( X射線光電子分光分析）測定。由於膜最外表鍵合的氧量較多，因而可以通過在真空下濺射除去20〜3 Onm深度後進行測定而對膜中的O/Me原子數比定量化。本發明耐熱遮光薄膜的金屬碳化物膜，也可以是以組成（金屬元素的含量和種類、碳元素含量、氮元素含量、氧元素含量）不同的多種金屬碳化物膜的層積膜構成。通過層積光學常數不同的多種金屬碳化物膜，可以獲得光干涉效果，從而控製反射性能。另外’在不損害本發明特徵的情況下，本發明的耐熱 -22- 200841038 遮光薄膜在上述金屬碳化物膜的表面上薄薄地塗敷具有潤滑性或低摩擦性的其他薄膜（例如，含氟的有機膜等）而使用也是可以的。 2·耐熱遮光薄膜的製造方法本發明耐熱遮光薄膜的製造方法，特徵在於是包括具有155 °C以上耐熱性的樹脂薄膜基材（A)和作爲遮光膜（B) 而在樹脂薄膜基材（A)—面或兩面上形成的金屬碳化物膜 (Me C)的耐熱遮光薄膜的製造方法，該方法將表面粗糙度爲 0.2〜2·2μιη(算術平均高度Ra)的樹脂薄膜基材（Α)置於濺射裝置中，採用金屬碳化物靶，在惰性氣體環境下通過濺射法，在該樹脂薄膜基材（A)上形成厚度爲1 〇〇nm以上、表面粗糙度爲0.1〜2·1μπι(算術平均高度Ra)、且金屬碳化物膜（MeC)中碳元素（C)相對於全部金屬元素（Me)的原子數比 (C/Me)爲0.3以上的結晶性金屬碳化物膜（MeC)。作爲金屬碳化物膜的成膜方法，較佳爲C V D、P V D等氣相合成，其中濺射法或離子鍍法由於能夠大面積均勻地形成緻密優質的膜，在工業上更佳。若通過濺射法或離子鍍法成膜，與油墨塗敷法和真空蒸鍍法相比，特徵在於膜的緻密性更大，與下層（基板或膜）的密合性更好。這一性能在將耐熱遮光薄膜於1 5 5〜3 0 0 °C的高溫環境下使用時很顯著。當通過油墨塗敷法成膜時，發現膜的脫離和膜氧化導致的色調變化，而當根據本發明通過濺射法成膜時，這種可能性很小，因此是較佳的。濺射法是在基材上形成蒸氣壓低的材料的膜時或者需 -23- 200841038 要控製精密的膜厚時有效的薄膜形成方法。通常，是在約 1 OPa以下的氬氣壓下，以基材作爲陽極，將作爲膜原料的濺射靶作爲陰極，在它們之間引發輝光放電，使其產生氬電漿，電漿中的氬陽離子撞擊陰極的濺射靶，將濺射靶成分的粒子衝擊飛出，使該粒子堆積在基材上而成膜的方法。上述濺射法根據氬電漿的發生方法進行分類，採用高頻電漿的爲高頻濺射法，採用直流電漿的爲直流濺射法。此外，磁控管濺射法是在濺射靶的背面安裝磁鐵，使氬電 ® 漿直接集中在濺射靶上，即使在低氣壓下也可以提高氬離子的撞擊效率的成膜方法。作爲通過濺射法獲得金屬碳化物膜的方法，包括採用金屬碳化物靶的方法，以及採用金屬靶在濺射氣體中導入作爲碳元素源的烴氣體等進行濺射成膜的方法。另外，還包括將金屬靶和碳靶同時濺射成膜，在基板上形成金屬成分和碳元素成分堆積而成的金屬碳化物膜的方法。其中，採用金屬碳化物靶的方法，由於膜組成和性能穩定，可以 ® 在純氬氣中進行濺射成膜，因而很簡便，是較佳的。在樹脂薄膜上通過濺射法形成金屬碳化物膜時，可以使用例如第3圖所示的捲取式濺射裝置。該裝置構造爲：將筒狀的樹脂薄膜基材1裝於捲出輥5上，通過渦輪分子栗等真空栗6將作爲成膜室的真空槽7內抽氣後，從捲出輥5輸出的薄膜1在途中經過冷卻罐滾筒8的表面，再被捲取輥9捲取。冷卻罐滾筒8表面的對側設有磁控管陰極 1 0，該陰極中裝有作爲膜原料的靶〗i。另外，由捲出輥5、 -24 - 200841038 冷卻罐滾筒8、捲取輥9等構成的薄膜輸送部j 而與磁控管陰極1 0相隔離。首先，將筒狀的樹脂薄膜基材1設置在捲採用渦輪分子泵等真空泵6將真空槽7內抽氣捲出輥5供給樹脂薄膜基材1，途經冷卻罐滾情被捲取輥9捲取，同時，使冷卻罐滾筒8與陰極使冷卻罐滾筒表面上貼合輸送的樹脂薄膜基材外’理想的是樹脂薄膜基材在濺射前要在玻璃 ^ 左右的溫度下加熱乾燥。在本發明的耐熱遮光薄膜中，金屬碳化物氬氣環境下通過使用金屬碳化物濺射靶的直流法在樹脂薄膜基材上形成膜。作爲樹脂薄膜上形成的遮光膜的金屬碳化所述需要是、晶體膜。金屬碳化物（MeC)膜由於是 (M e)晶體中可侵入碳元素（c )的材料，與其金屬金屬膜相比，難以發生結晶化。並且因爲通過 ® 的晶體中侵入碳元素，使各元素間的鍵的共價增大，與不含碳元素的金屬鍵性構成的金屬材晶化更難以發生。若是可產生耐熱性的C/Me 0.3以上的膜，則特別難以發生結晶化。另外，薄膜晶體的成長在很多程度上依賴類和表面形狀。在形成金屬碳化物膜這種無機金屬氧化物等無機材料的基板上相比，在有機膜更難製得結晶性良好的膜。此外，基板表面通過隔板1 2 出輥5上，。然後，由 ί 8的表面， ί之間放電， 1成膜。另化轉變溫度膜層在例如磁控管濺射物膜，如上其金屬成分成分（Me)的向金屬成分鍵性的比率料相比，結原子數比爲於基板的種膜時，與在物基板上成 s坦性越好， -25 - 200841038 達到基板的濺射粒子越容易遷移形成晶體陣列，而根據本發明的情況，在表面凹凸較大的基板表面上，入射的濺射粒子難以遷移形成晶體陣列，因而難以獲得結晶性良好的薄膜。在表面凹凸大的耐熱性樹脂薄膜表面上，能夠緻密地形成結晶性好的金屬碳化物膜，決定了是否能夠實現本發明的耐熱性、耐久性優良的耐熱遮光薄膜。在本發明中，爲了由金屬碳化物靶在表面凹凸大的耐 ® 熱性樹脂薄膜表面上通過濺射法形成結晶性良好的緻密金屬碳化物膜，如下所詳述，濺射氣壓、成膜時薄膜表面溫度的控製特別重要。通常，濺射成膜在10Pa以下氣壓的惰性氣體下產生電漿而進行成膜，但對於獲得可用於耐熱遮光薄膜的遮光膜、結晶性良好的金屬碳化物膜而言，較佳爲在特定氣壓下進行成膜。在形成結晶性良好的金屬碳化物膜時，成膜 0 時的氣壓根據裝置的種類等而不同，因而不能統一地規定’較佳爲1 · 0 P a以下，例如〇 . 2〜1 . 〇 P a。這樣，由於到達基板（樹脂薄膜）的濺射粒子獲得高能量，在耐熱樹脂薄膜基板上形成結晶性金屬碳化物膜，膜與薄膜之間表現出牢固的密合性。這樣，即使樹脂薄膜基材上殘留微量的噴射材料，在 155〜3 00°C的高溫環境下，噴射材料與金屬碳化物膜存在熱膨脹差，也不會發生膜脫離。若成膜時的氣壓不足 0.2Pa ’則由於氣壓低使濺射法中的氬電漿不穩定，從而導 -26- 200841038 致形成的膜的膜質變差。並且若不足〇.2Pa，反彈的氬粒子對在基板上堆積膜的再濺射機能增強，容易妨礙緻密膜的形成。另外，當成膜時的氣壓超過l.〇pa時，由於到達基板的濺射粒子的能量低，使膜很難結晶成長，金屬碳化物膜顆粒變粗，不能形成高緻密的結晶性膜質，因而與樹脂薄膜基材的粘合力減弱，導致膜脫離。這樣的膜不能用於耐熱性用途的遮光膜。另一方面，成膜時薄膜表面溫度對金屬碳化物膜的結晶性有影響。成膜時的薄膜表面溫度越高，濺射粒子越容易形成結晶陣列，改善了結晶性。但是，耐熱樹脂薄膜的加熱溫度也有界限，即使是耐熱性最優良的聚醯亞胺薄膜，也需要在400°C以下的表面溫度下進行成膜。可以獲得對樹脂薄膜高密合的金屬碳化物膜。因此，當要獲得在高溫環境下可以使用的耐熱遮光薄膜時特別重要。成膜時的最佳薄膜表面溫度根據所用薄膜基材的種類而不同，因而不能統一地規定，例如，爲了獲得在1 0 0〜1 5 5 °C的環境下使用的耐熱遮光薄膜，較佳爲15 5°C以上。這樣，即可獲得即使在1 0 0〜1 5 5 °C的環境下也可獲得的下述耐熱遮光薄膜，該耐熱遮光薄膜對薄膜密合性優良、緻密，以結晶性優良膜質的金屬碳化物膜構成。在這種情況下，當然要使用具有1 5 5 °C以上耐熱性的樹脂薄膜。另外，爲了獲得在超過155 °C的溫度，特別是200〜3 OOt 那樣的高溫環境下也可使用的耐熱遮光薄膜，成膜時薄膜表面溫度較佳爲1 8 0〜2 2 0 °C，或者2 2 0 °C以上、薄膜的耐 -27- •200841038 熱溫度以下的高溫。這樣可以獲得與具有2 0 0 °C以上耐熱性的薄膜的密合性優良的、緻密膜質的耐熱遮光薄膜。但是，爲了獲得在室溫〜1 3 0 °C的溫度下使用的遮光薄膜，成膜時薄膜表面溫度爲50〜100 °C也足夠。然而，當薄膜表面溫度爲50〜10 (TC時，特別難以獲得結晶性的金屬碳化物膜，必須在濺射氣壓爲0.2〜1.0 Pa的範圍內進行成膜。這樣，可以獲得包括在室溫〜1 3 0 °C環境下對薄膜密合性優良的金屬碳化物膜的耐熱遮光薄膜。 — 另外，成膜過程中樹脂薄膜基材可由電漿自然加熱。通過調節氣壓、向靶施加的電力和薄膜的輸送速度，根據從靶向基材射入的熱電子和從電漿的熱輻射，可以容易地使成膜過程中的樹脂薄膜基材表面溫度維持在 1 5 5〜 220 °C。氣壓越低，施加的電力越高，薄膜輸送速度越慢，則由電漿自然加熱的加熱效果就越高。即使在成膜時使薄膜與冷卻罐接觸的情況下，由於自然加熱的影響，薄膜表 _ 面的溫度也遠比冷卻罐溫度高。然而，在第3圖的裝置中，自然加熱的薄膜表面溫度由於薄膜一邊被冷卻罐冷卻一邊輸送，因而在很大程度上也有賴於罐的溫度，若要盡可能利用成膜時自然加熱的效果，則提高冷卻罐的溫度並減慢輸送速度是很有效的。金屬碳·化物膜的膜厚，可以通過成膜時薄膜的輸送速度和向靶施加的電力而進行控製，輸送速度越慢，以及向靶施加的電力越大，則膜越厚。另外，第4圖演示的是與上述薄膜輸送方式不同的裝 -28- 200841038 置。根據該裝置，由於是不通過冷卻罐冷卻薄膜而濺射成膜的成膜方法（浮法），因而可以有效地利用自然加熱效果。在該方法中，由與靶遠離的兩根支援輥13支持薄膜，靶11對向的薄膜不會在背面被冷卻，其在成膜室（真空槽 7)內成懸·浮狀態而進行成膜。由於成膜室爲真空，由靶和電漿照射而蓄積在薄膜上的熱量不容易散失，因而可以有效地加熱。因此，實際270 °C以上的自然加熱效果也能夠很容易地實現。 ^ 成膜過程中的基材表面溫度可以通過輻射溫度計測定，或者預先在薄膜表面上貼上示溫標籤，成膜後觀察標籤顏色的變化即可知所達到的溫度。這樣，可以獲得在樹脂薄膜基材一面上高密合性地形成了金屬碳化物膜的耐熱遮光薄膜。若要獲得在兩面上形成金屬碳化物膜的耐熱遮光薄膜，則進一步置於上述濺射裝置中，同樣地通過濺射在樹脂薄膜基材的背面按順序形成金屬碳化物膜。另外，爲了進行金屬碳化物膜的成膜，例示了膜式濺射裝置，對連續成膜的方法進行了詳細說明，但是本發明並不局限於這些，也可以採用成膜時不移動基材薄膜的分批式成膜方法。此時，需要進行環境氣體的更換、薄膜的輸入.停止操作，因而很繁瑣。此外，還可以不將基材薄膜捲成捲狀，而以切割成規定大小的狀態固定在裝置內。 3.耐熱遮光薄膜的用途由上述製造方法製得的本發明耐熱遮光薄膜，通過進 -29- 200841038 行不會產生端面裂縫的沖孔加工以製成特定的形狀，用作爲數碼照相機、數碼攝像機的固定光圈或機械快葉片，或僅使一定光量通過的光圈（iris)，特別是液晶機的光量調節用裝置（自動光圈）的光圈葉片。特別地，車載用數位攝影機的鏡頭單元內的固圈，被夏季陽光加熱的效果顯著，以及液晶投影機的調節裝置被燈光照射的加熱效果顯著。因此，加工本的耐熱遮光薄膜所製得的耐熱遮光性好的光圈葉片有 ® 此外，在採用回流步驟裝配光學部件的製造步驟中，本發明的耐熱遮光薄膜所製得的固定光圈或機械快門由於在步驟中的加熱環境下也不會發生性能的改變，有用。第5圖是顯示裝載了進行沖孔加工後耐熱遮光葉的光量調節裝置的光圈機構的示意圖。耐熱遮光葉片有導向孔1 5和孔1 9，孔1 9用於將其裝配在與驅動電合的導向銷1 6和設有控製遮光葉片運行位置的銷1 7 ^ 板1 8上。另外，基板1 8的中央具有允許燈光通過的部2 0，遮光葉片根據光圈裝置的結構而可以爲各種形此外，本發明的耐熱遮光薄膜由於以樹脂薄膜作爲基因而實現了輕量化，可以使驅動遮光葉片的驅動部件化並降低耗電量。 [實施例] 接下來，採用實施例、比較例對本發明進行具體明。另外，所得耐熱遮光薄膜的評價通過以下方法進可以門的投影定光光量發明用。加工葉片因而片14 14設機卡的基開口材，小型的說行。 -30- 200841038 (光密度、反射率）所得耐熱遮光薄膜的光密度、反射率，採用分光光度計，測定波長爲380nm〜780nm可見光區的遮光性和反射率（正反射率）。作爲遮光性指標的光密度由通過分光光度計測定的透光率（T)按照以下的公式換算。必須達到光密度爲4以上，最大反射率木足1 〇 %。光密度=L〇g(l/T) (表面光澤度） ® 所得耐熱遮光薄膜的表面光澤度採用光澤度計按照 JIS Z 874 1進行測定。若表面光澤度不足3%，則光澤度爲良好。 (摩擦係數）所得耐熱遮光薄膜的靜摩擦係數和動摩擦係數按照 JIS D 1 894進行測定。當靜摩擦係數和動摩擦係數爲〇.3 以下時判斷爲良好。 (表面粗糙度） ® 所得耐熱遮光薄膜的算術平均高度R a通過表面粗糙度計（（股）東京精密製·造，Surfcom 5 70A)測定。表面粗糙度必須爲0·1〜2·1μηι(算術平均高度Ra)。 (遮光膜的結晶性）遮光膜的結晶性透過X射線繞射測定進行評價。X射線繞射裝置採用X‘pertPR〇MPD(PANalytical公司製造），測定條件爲廣角範圍測定，採用CuKa線，電壓45kV，電流；40mA Μ行測定。根據有無X射線繞射峰評價膜的結晶 •31 - 200841038 性。並且也透過TEM觀察膜截面，根據有無結晶顆粒評價結晶性。 (遮光膜的組成）遮光膜的組成（C/Me原子數比）透過XPS和ΕΡΜΑ(電子束微量分析器）定量分析確定。另外遮光膜中含氧量（O/Me 原子數比）以XPS定量分析。藉由XPS的組成分析，在真空下濺射除去20〜3 Onm深度後進行測定。必須達到C/Me 爲0.3以上，O/Me爲0.5以下。 ® (耐熱性）所得耐熱遮光薄膜的耐熱性能按照以下的程式進行評價。將製作的耐熱遮光薄膜在加熱至設定加熱溫度（1 3 0、 155、250°C)的烘箱（Advantech製造）中放置24小時後，取出。當沒有彎曲和膜變色時評價爲良好（〇），當有彎曲或者膜變色時評價爲不夠好（X)。 (密合性）所得耐熱遮光薄膜的密合性由耐熱試驗後的膜按照 ^ JIS C002 1進行評價。當沒有膜脫離時評價爲良好，有膜脫離時評價爲不佳。 (導電性）所得耐熱遮光薄膜的導電性，按照ns K69 1 1測定表面電阻値。 (實施例1) 採用如第3圖所示的捲取式濺射裝置在具有20(TC以上耐熱性的樹脂薄膜基材上進行金屬碳化物膜的成膜。首 -32- .200841038 先，在冷卻罐滾筒8表面對側的設有磁控管陰極i 〇的裝置的陰極中，裝上作爲膜原料的靶1 1。捲出輥5、冷卻罐滾筒8、捲取輥9等構成的薄膜輸送部通過隔板1 2與磁控管陰極1 0相隔離。然後，將筒狀的樹脂薄膜基材1設置在捲出輥5上。樹脂薄膜基材採用進行了噴砂表面加工、使其具有算術平均高度Ra爲〇.5μπι的表面凹凸、厚度爲75μπι的聚醯亞胺（ΡΙ)薄膜。該聚醯亞胺（ΡΙ)薄膜在濺射前加熱至200°C ® 以上的溫度進行乾燥。然後，通過渦輪分子泵等真空栗6將真空槽7內抽氣後，使冷卻罐滾筒8與陰極之間放電，將樹脂薄膜基材1 與冷卻罐滾筒表面貼合而輸送，同時進行成膜。成膜前真空槽內達到的真空度爲2χ1 (Γ4以下。首先，將碳化鈦燒結體靶（C/Ti原子數比爲0.8)置於陰極中，由該陰極通過直流濺射法進行碳化鈦膜的成膜。碳化鈦膜採用純氬氣濺射氣體（純度99.999%)在0.6Pa的濺射 ^ 氣壓下進行成膜。成膜時通過控製薄膜的輸送速度和向靶施加的電力來控製碳化鈦膜的厚度。從捲出輥5輸送出的樹脂薄膜基材1途經冷卻罐滾筒8的表面，再由捲取輥9 捲取。 • 在碳化鈦膜的濺射時，薄膜的表面溫度通過紅外線輻射溫度計，由捲取式濺射裝置的石英玻璃視窗測定，溫度爲 200 〜210〇C。在厚度爲75 μπι的聚醯亞胺（PI)薄膜兩面上，濺射形成 - 33· 200841038 膜厚爲200nm的碳化鈦膜，製得耐熱遮光薄膜。對該聚醯亞胺（PI)薄膜的表面以規定的噴射時間、噴射壓力、輸送速度進行噴砂加工，在兩面上都形成算術平均高度Ra爲 0.5μηι的微細凹凸。通過在薄膜兩面的每一面上進行如此的成膜，可以製造出以聚醯亞胺（ΡΙ)薄膜基材爲中心的對稱結構的遮光薄膜。然後，對所製作的耐熱遮光薄膜通過上述方法進行評價。其結果爲：所得碳化鈦膜的組成由XPS和ΕΡΜΑ定量 ^ 分析，結果與靶組成相同（C/Ti原子數比爲0.8)。另外膜內部含氧量通過XPS定量分析，O/Me的原子數比爲0.3。膜的結晶性通過X射線繞射測定的結果，得到如第6 圖所示的光譜圖，觀察到由TiC晶體結構產生的繞射峰，可知其爲結晶性優良的膜。另外，膜的截面透過TEM觀察，可見爲由晶粒構成的膜。另外，可見光區（波長3 8 0〜780nm)的光密度爲4以上，最大反射率爲7 %。並且，表面光澤度不足3 %。靜摩擦係數和動摩擦係數爲0.3以下，良好。另外，表面電阻値（sheet resistance)爲98Ω/[Ι1(讀爲歐姆每平方），表面算術平均局度Ra爲0.4μπι。加熱後的耐熱遮光薄膜沒有發生彎曲和變色。沒有發生膜脫離，良好。遮光性、反射性能、光澤度、摩擦係數與加熱前也沒有變化。這些評價結果列於表1。所得耐熱遮光薄膜光密度、反射率、表面光澤度、耐熱性、摩擦係數、導電性全都良好，由此可見，這種耐熱 -34- 200841038 遮光薄膜可以作爲在高溫環境下使用的液晶投影機的光圈等部件使用。 (實施例2) 除了改變成膜過程中的薄膜輸送速度、僅使碳化鈦膜的厚度變爲1 1 〇nm以外，在與實施例1完全相同的條件下製作耐熱遮光薄膜。靶的種類、聚醯亞胺的種類、厚度、表面粗糙度與實施例1相同。另外成膜前真空槽內達到的真空度爲6x1 (T5Pa以下。遮光膜的含碳量與實施例1相 ® 同。膜內部含氧量通過XPS定量分析，O/Me的原子數比爲0.4。由遮光膜的X射線繞射測定可知，該膜爲結晶性優良的TiC膜。另外，截面透過TEM觀察，也可知形成了由晶粒構成的緻密膜。製得的耐熱遮光薄膜的評價（光學性能、耐熱性）以與實施例1同樣的方法、條件進行。在與實施例1同樣地進行碳化鈦膜的濺射時’薄膜的表面溫度通過紅外線輻射溫度計，由捲取式濺射裝置的石英玻璃視窗測定，溫度爲1 8 0 •〜20 0。。。可見光區域的光密度、反射率' 光澤度等性能獲得與實施例1同等的水準。並且’確認表面電阻値爲1 9 0 Ω /□ ’ 表面算術平均高度Ra爲0.4Km。此外，在25〇°C下24小時的加熱試驗後的膜的密合性評價中’也沒有彎曲和膜的脫離，可見具有與實施例1同等的耐熱性能°製得的耐熱遮光薄膜的構成、性能一並列於表1。由此可見，這種耐熱遮光薄膜可以作爲在高溫環境下 -35- 200841038 使用的液晶投影機的光圈等部件使用。 (實施例3 ) 在實施例2的成膜條件下，使成膜前真空槽內達到的真空度爲8xl(T4Pa，在薄膜基材上進行5次成膜，在薄膜兩面上形成5 5 0nm的碳化鈦膜，除此以外，在與實施例2 完全相同的條件下製作耐熱遮光薄膜。靶的種類、聚醯亞胺的種類、厚度、表面粗糙度與實施例1相同。製得的耐熱遮光薄膜的評價（光學性能、耐熱性）以與 ® 實施例1同樣的方法、條件進行。在與實施例1同樣地進行碳化鈦膜的濺射時，薄膜的表面溫度通過紅外線輻射溫度計，由捲取式濺射裝置的石英玻璃視窗測定，溫度爲1 8 0 〜2 00〇C。遮光膜的含碳量與實施例1相同。XP S定量分析的膜內部含氧量（O/Ti原子數比）爲0.8，與實施例1〜2的膜相比有相當的增多。由膜的X射線繞射測定可知，該膜爲結晶性優良的TiC膜。另外，截面透過TEM觀察，也可知其 ® 由結晶粒構成的緻密膜構成。可見光區域的光密度、反射率、光澤度等性能獲得與實施例1同等的水準。並且，確認表面電阻値爲80Ω/Ο，表面算術平均高度Ra爲〇·3μιη。此外，在25 0 °C下24小時的加熱試驗後的膜的密合性評價中，也沒有彎曲和膜的脫離，可見具有與實施例1同等的耐熱性能。製得的耐熱遮光薄膜的構成、性能一並列於表1。實施例3的膜含氧量比實施例1〜2的膜多，是由於成 -36- 200841038 膜過程中真空槽內真空度較差。也就是說是被認爲由於真空槽內的殘留氧氣由擺射被攝取到膜中。這種含氧量多的膜，由於透光率有若干增高，若膜厚不足4 0 Onm則不能獲得充分的遮光性。但是通過使實施例3那樣的膜厚達到 5 5 Onm，確保了光密度爲4以上的充分遮光性。另外，在同樣的實驗中，當爲Ο/Ti原子數比爲0.9的膜時，膜厚爲45 Onm、5 OOnm時均確認爲達到光密度爲4 以上的遮光性。 ^ 這種耐熱遮光薄膜可以作爲在高溫環境下使用的液晶投影機的光圈等部件使用。 (比較例1) 除了改變薄膜輸送速度使碳化鈦膜的厚度變爲90nm 以外，在與實施例1完全相同的條件下製作耐熱遮光薄膜。靶的種類、聚醯亞胺的種類、厚度、表面粗糙度與實施例1相同。遮光膜的組成（含碳量、含氧量）、結晶性也 0 與實施例1的膜相同。評價結果列於表2。對薄膜兩面上形成了 90nm碳化鈦膜的耐熱遮光薄膜以與實施例1同樣的方法、條件進行的評價（光學性能、耐熱性）。其結果爲：光密度爲3，可見沒有充分的遮光性。因此，若將這種遮光膜用於液晶投影機光圈部件，由於會發生漏光，因而不具有足夠的性能。 (實施例4) 除了使用由改變噴砂表面加工條件製作的算術平均高度Ra爲〇·2μπι的聚醯亞胺薄膜以外，在與實施例1完全相 -37- .200841038 同的條件下製作耐熱遮光薄膜。靶的種類、聚醯亞胺的種類、厚度與實施例1相同。在與實施例1同樣地進行碳化鈦膜的濺射時，薄膜的表面溫度通過紅外線輻射溫度計，由捲取式濺射裝置的石英玻璃視窗測定，溫度爲2 0 0〜2 1 0 °C，具有與實施例1同等的薄膜溫度。製得的耐熱遮光薄膜的評價（光學性能、耐熱性）以與實施例1同樣的方法、條件進行。遮光膜的組成 (含碳量、含氧量）、結晶性也與實施例1的膜相同。性能 0 -並列於表1。其結果是：光密度、光澤度等性能獲得與實施例1同等的水準。並且，確認表面電阻値爲105 Ω/□，表面算術平均高度Ra爲Ο.ίμιη。可見光區域的最大反射率爲1〇%。在2 5 0°C下24小時的加熱試驗後的膜的密合性評價中，也沒有彎曲和膜的脫離，可見具有與實施例1同等的耐熱性能。製得的耐熱遮光薄膜的構成、性能一並列於表1。由此可見，這種耐熱遮光薄膜可以作爲在高溫環境下 ^ 使用的液晶投影機的光圈等部件使用。 (實施例5) 除了使用由改變噴砂表面加工條件製作的、算術平均高度Ra爲0 · 8 μπι的聚醯亞胺薄膜以外，在與實施例1完全相同的條件下製作耐熱遮光薄膜。靶的種類、聚醯亞胺的種類、厚度與實施例1相同。在與實施例1同樣地進行碳化鈦膜的濺射時，薄膜的表面溫度通過紅外線輻射溫度計，由捲取式濺射裝置的石 -38- 200841038 英玻璃視窗測定，溫度爲200〜21 0°C，具有與實施例1同等的薄膜溫度。製得的耐熱遮光薄膜的評價（光學性能、耐熱性）以與實施例1同樣的方法、條件進行。確認遮光膜與實施例1 同樣結晶性優良，膜中含碳量和含氧量也與實施例1基本相同。性能一並列於表1。其結果是：光密度、反射率、光澤度等性能獲得與實施例1同等的水準。並且，確認表面電阻値爲90Ω/□，表 ^ 面算術平均高度Ra爲0.7μιη。另外，在250°C下24小時的加熱試驗後的膜的密合性評價中，也沒有彎曲和膜的脫離，可見具有與實施例1同等的耐熱性能。由此可見，這種耐熱遮光薄膜可以作爲在高溫環境下使用的液晶投影機的光圈等部件使用。 (比較例2 ) 除了使用由改變噴砂表面加工條件製作的算術平均高度Ra爲0.1 μπι的聚醯亞胺薄膜以外，在與實施例1完全相 ^ 同的條件下製作耐熱遮光薄膜。靶的種類、聚醯亞胺的種類、厚度與實施例1相同。在與實施例1同樣地進行碳化鈦膜的濺射時，薄膜的表面溫度通過紅外線輻射溫度計，由捲取式濺射裝置的石英玻璃視窗測定，溫度爲2 0 0〜2 1 0 °c。對薄膜兩面上製作了碳化鈦膜的耐熱遮光薄膜的評價 (光學性能、耐熱性）以與實施例1同樣的方法、條件進行。確認遮光膜與實施例1同樣結晶性優良，膜中含碳量和含 -39 - 200841038 氧量也與實施例1相同。性能一並列於表1。其結果是：雖然光密度爲4以上’與實施例1相同’但反射率最大爲 3 3 %，光澤度顯示爲7 0 %，與實施例2相比’是反射率和光澤度更大的耐熱遮光薄膜。另外’確認表面電阻値爲 110Ω/□，表面算術平均高度Ra爲0·05μπι。在250 °C下24 小時的加熱試驗後的膜的密合性評價中’沒有彎曲和膜的脫離。這種反射率和光澤度値大的耐熱遮光薄膜若用於快門 ® 葉片等，由於受到表面反射的影響而不能應用。 (比較例3) 除了改變基於噴砂而進行的表面加工條件製作的算術平均高度Ra爲2· 3 μπι的聚醯亞胺薄膜以外，在與實施例2 完全相同的條件下製作耐熱遮光薄膜。靶的種類、聚醯亞胺的種類、厚度與實施例2相同。在與實施例1同樣地進行碳化鈦膜的濺射時，薄膜的表面溫度通過紅外線輻射溫度計，由捲取式濺射裝置的石 ® 英玻璃視窗測定，溫度爲200〜21 0°C，具有與實施例1同等的薄膜溫度。對薄膜兩面上製作了 1 1 〇nm碳化鈦膜的耐熱遮光薄膜的評價（光學性能、耐熱性）以與實施例1同樣的方法、條件進行。確認遮光膜與實施例2同樣結晶性優良，膜中含碳量和含氧量也與實施例2相同。性能一並列於表2。其結果是：雖然最大反射率爲4 %，光澤度爲3 %以下，與實施例2相同，但光密度低至2.0，確認爲遮光性不夠的耐熱 -40- 200841038 遮光薄膜。另外，確認表面電阻値爲86Ω/□，表面算術平均高度Ra爲2.2μηι。在2 5 0 °C下24小時的加熱試驗後的膜的密合性評價中，沒有彎曲和膜的脫離。製得的耐熱遮光薄膜的構成、性能一並列於表2。由此可見，這種光密度低的耐熱遮光薄膜，由於若與實施例相比，可透過相當多的光，不僅不能用於液晶投影機的光圈部件，在很多光學系統的用途中都不能使用。 (實施例6〜8) ® 除了採用含碳量不同的靶，碳化鈦膜的C/Ti原子數比改爲〇.3(實施例6)、0.5(實施例7)、1.1(實施例8)以外，在與實施例1完全相同的條件下製作耐熱遮光薄膜。聚醯亞胺的種類、厚度、表面粗糙度、碳化鈦膜的厚度與實施例1相同。製得的耐熱遮光薄膜的構成、性能列於表1。在與實施例1同樣地進行碳化鈦膜的濺射時，薄膜的 0 表面溫度通過紅外線輻射溫度計，由捲取式濺射裝置的石英玻璃視窗測定，溫度爲2 0 0〜2 1 0 °C，具有與實施例1同等的薄膜溫度。製得的耐熱遮光薄膜的評價（光學性能、耐熱性）以與實施例1同樣的方法、條件進行。其結果是：光密度、反射率、光澤度等性能獲得與實施例1同等的水準。另外，確認表面電阻値爲90〜1 1 5Ω/□，表面算術平均高度Ra爲 0·4μιη。由遮光膜的X射線繞射發現，存在若C/Ti量增多則繞射峰減弱的趨勢，但任一膜都顯示良好的結晶性。此 -41 - 200841038 外’由同樣的TEM觀察確認，任一膜都爲晶體膜。通過 XPS定量分析膜中含氧量，〇/Ti原子數比爲〇.2〜〇4。另外’在2 5 0 °C下2 4小時的加熱試驗後的膜的密合性評價中，也沒有彎曲和膜的脫離，可見具有與實施例1同等的耐熱性能。由此可見，這種耐熱遮光薄膜可以作爲在高溫環境下使用的液晶投影機的光圈等部件使用。 (比較例4) ® 除了採用含碳量不同的靶，碳化鈦膜的C/Ti原子數比改爲0 · 1 5以外，在與實施例1完全相同的條件下製作耐熱遮光薄膜。聚醯亞胺的種類、厚度、表面粗糙度、碳化鈦膜的厚度與實施例1相同。製得的耐熱遮光薄膜的構成、性能列於表1。在與實施例1同樣地進行碳化鈦膜的濺射時，薄膜的表面溫度通過紅外線輻射溫度計，由捲取式濺射裝置的石英玻璃視窗測定，溫度爲200〜21 0°C，具有與實施例1同 ® 帛的薄膜溫度。製得的耐熱遮光薄膜的評價（光學性能、耐熱性）以與實施例1同樣的方法、條件進行。其結果是：光密度、反射率、光澤度等性能獲得與實施例1同等的水準。另外’ 確認表面電阻値爲 86Ω/□，表面算術平均高度 Ra爲 0.4μπι。膜的結晶性良好，膜中Ο/Ti原子數比爲〇·4。另外，對在2 5 0 °C下2 4小時加熱試驗後的膜進行評價，雖然沒有彎曲，但是發生了膜的脫離’隨著反射率的 -42- 200841038 變化色調變化也顯著。膜截面透過TEM觀察，遮光膜表面和聚醯亞胺一側的膜被氧化。據此認爲這是膜密合性降低和色調發生變化的起因。由此可見’這種耐熱遮光薄膜不能作爲在高溫環境下使用的液晶投影機的光圈等部件使用。 (比較例5) 除了使用Ti靶’以不含碳元素的鈦膜作爲遮光膜使用以外’在與實施例1完全相同的條件下製作耐熱遮光薄 β 膜。聚醯亞胺的種類、厚度、表面粗糙度、遮光膜的厚度與實施例1相同。製得的耐熱遮光薄膜的構成、性能列於表、2。在與實施例1同樣地進行鈦膜的濺射時，薄膜的表面溫度通過紅外線輻射溫度計，由捲取式濺射裝置的石英玻璃視窗測定，溫度爲2 0 0〜2 1 0 °C，具有與實施例1同等的薄膜溫度。製得的耐熱遮光薄膜的評價（光學性能、耐熱性）以與 ® 實施例1同樣的方法、條件進行。其結果是：光密度、反射率、光澤度等性能獲得與實施例1同等的水準。另外，確認表面電阻値爲86Ω/□，表面算術平均高度Ra爲0·4μπι。但是，對在250°C下24小時加熱試驗後的膜進行評價，雖然沒有彎曲，但是發生了膜的脫離，隨著反射率的變化色調變化也顯著。膜截面透過TEM觀察，膜表面和聚醯亞胺一側的膜被氧化。據此認爲這是膜密合性降低和色調發生變化而產生的。 •43- ‘200841038 由此可見’這種耐熱遮光薄膜不能作爲在高溫環境下使用的液晶投影機的光圈等部件使用。 (實施例9) 採用如第4圖所示的捲取式濺射裝置，在懸浮狀態下於樹脂薄膜基材一面上與實施例1同樣地形成碳化鈦膜。樹脂薄膜基材採用200μιη厚度的聚醯亞胺薄膜。薄膜的成膜面預先進行了噴砂加工，具有與實施例1同等粗糙度的表面。 ^ 製得的耐熱遮光薄膜的評價（光學性能、耐熱性）以與實施例1同樣的方法、條件進行。在與實施例1同樣地進行碳化鈦膜的濺射時，薄膜的表面溫度通過紅外線輻射溫度計’由捲取式濺射裝置的石英玻璃視窗測定，溫度爲270 〜3 1 0 °C，與實施例1相比，薄膜表面從電漿受到的自然加熱效果更顯著。成膜面一側可見光區域光密度、反射率、光澤度等性能獲得與實施例1同等的水準。另外，確認表面電阻値爲 ^ 95Ω/□，表面算術平均高度Ra爲〇.4μπι。膜的結晶性良好，膜中含碳量和含氧量與實施例1相同。另外，在2 5 0°C下24小時的加熱試驗後的膜的密合性評價中，沒有彎曲和膜的脫離，可見具有與實施例〗同等的耐熱性能。製得的耐熱遮光薄膜的構成、性能一並列於表1。由此可見，這種耐熱遮光薄膜可以作爲在高溫環境下使用的液晶投影機的光圈等部件使用。 -44- 200841038 (實施例10〜12，比較例6〜7) 與實施例6〜8、比較例4〜5同樣地採用含碳量不同的碳化鎢膜作爲遮光膜試製耐熱遮光薄膜。樹脂薄膜基材爲厚度爲50μηι的聚醯亞胺薄膜，兩面上均形成了算術平均高度Ra爲0.5 μπι的微細凹凸。在與實施例6〜8、比較例4〜5同樣的條件下，使用含碳量不同的碳化鎢靶或鎢靶，在薄膜表面上形成1 50nm左右的含碳量不同的碳化鎢膜或鎢膜。在與實施例1同樣地進行碳化鎢膜或鎢膜的濺 ^ 射時，薄膜的表面溫度通過紅外線輻射溫度計，由捲取式濺射裝置的石英玻璃視窗測定，溫度爲190〜20 3 °C。製得的耐熱遮光薄膜的構成、性能一並列於表1、表 2。膜中含氧量通過XPS分析，O/Me原子數比爲〇.〇5〜0.1。遮光膜由X射線繞射發現，存在若C/W量增多則繞射峰減弱的趨勢，但任一膜都顯示良好的結晶性。此外，由同樣的TEM觀察也可確認，任一膜都爲晶體膜。可見光區域的光密度、反射率、光澤度等性能獲得與 ^ 實施例1同等的水準。另外，顯示出表面電阻値爲8 3〜 123Ω/□的導電性，表面算術平均高度Ra爲0.4μηι。對在25 0 t：下24小時加熱試驗後的膜進行評價，膜的 C/W原子數比爲0.3(實施例10)、0.6(實施例11)、0.9(實施例12)時，在色調變化和密合性實驗時沒有發現膜的脫離，但膜的C/W原子數比爲0.1 (比較例6)、0(比較例7) 時，在密合性實驗中發生了膜的脫離，且隨著反射率的改變色調變化也顯著。 -45- •200841038 對比較例6和比較例7的膜截面透過TEM觀察，膜表面和與聚醯亞胺接觸一側的膜部分被氧化，而實施例1 〇〜 1 2中沒有發現氧化。由此認爲，比較例6和比較例7中膜密合性降低和色調變化是由於膜氧化的原因。由此可見，如實施例1 〇〜1 2的耐熱遮光薄膜可以作爲在高溫環境下使用的液晶投影機的光圈等部件使用，而比較例6、7不能在局溫環境下使用。 (實施例13〜15，比較例8〜9) 與實施例6〜8、比較例4〜5同樣地採用含碳量不同的碳化矽膜作爲遮光膜試製耐熱遮光薄膜。樹脂薄膜基材爲厚度爲125μηι的聚醯亞胺薄膜，兩面上均形成了算術平均高度Ra爲0.4 μιη的微細凹凸。在與實施例6〜8、比較例4〜5同樣的條件下，使用含碳量不同的碳化矽靶或矽靶，在薄膜兩面上形成27 Onm左右的含碳量不同的碳化矽膜或矽膜。在與實施例1同樣地進行碳化矽膜或矽膜的濺射時，薄膜的表面溫度通過紅外線輻射溫度計，由捲取式濺射裝置的石英玻璃視窗測定，溫度爲205〜21 3°C。製得的耐熱遮光薄膜的構成、性能一並列於表1、表 2。膜中含氧量透過XPS分析，Ο/Si原子數比爲0.1〜0.2。遮光膜由X射線繞射發現，存在若C/Si量增多則繞射峰減弱的趨勢，但任一膜都顯示良好的結晶性。此外，由同樣的TEM觀察也可確認，任一膜都爲晶體膜。可見光區域的光密度、反射率、光澤度等性能獲得與實施例1同等的水準。另外，顯示出表面電阻値爲1 〇 5〜 -46- 200841038 15 6Ω/□的導電性，表面算術平均高度Ra爲0.3μπι。對在25 0 °C下24小時加熱試驗後的膜進行評價，膜的 C/Si原子數比爲〇.35(實施例13)、0.5(實施例14)、0·95(實施例1 5 )時，在色調變化和密合性實驗時沒有發現膜的脫離，但膜的C/Si原子數比爲0.2(比較例8)、0(比較例9) 時，在密合性實驗中發生了膜的脫離，且隨著反射率的改變色調變化也顯著。對比較例8和9的膜截面透過TEΜ觀察，膜表面和聚醯亞胺一側的膜被氧化，而實施例1 3〜1 5 ® 的膜中沒有發現氧化。由此認爲，比較例8和比較例9中膜密合性降低和色調變化是由於膜氧化的原因。由此可見，如實施例1 3〜1 5的耐熱遮光薄膜可以作爲在高溫環境下使用的液晶投影機的光圈等部件使用’而比較例8、9不能在高溫環境下使用。 (實施例16〜18，比較例1〇〜1 1) 與實施例6〜8、比較例4〜5同樣地採用含碳量不同的碳化鋁膜作爲遮光膜試製耐熱遮光薄膜。樹脂薄膜基材 ^ 爲厚度爲20μιη的聚醯亞胺薄膜，兩面上均形成了算術平均高度Ra爲0.6 μπι的微細凹凸。在與實施例6〜8、比較例4〜5同樣的條件下，使用含碳量不同的碳化鋁靶或鋁靶，在薄膜兩面上形成230 nm左右的含碳量不同的碳化鋁膜或鋁膜。在與實施例1同樣地進行碳化鋁膜或鋁膜的濺射時，薄膜的表面溫度通過紅外線輻射溫度計，由捲取式濺射裝置的石英玻璃視窗測定，溫度爲2 0 0〜2 1 0 °C。製得的耐熱遮光薄膜的構成、性能一並列於表1、表 -47- 200841038 2。膜中含氧量通過XPS分析，Ο/Al原子數比爲0.1〜〇.2。遮光膜由X射線繞射發現，存在若C/A1量增多則繞射峰減弱的趨勢，但任一膜都顯示良好的結晶性。此外，由同樣的TEM觀察也可確認，任一膜都爲晶體膜。可見光區域的光密度、反射率、光澤度等性能獲得與實施例1同等的水準。另外，顯示出表面電阻値爲8 2〜 125Ω/□的導電性，表面算術平均高度Ra爲〇.5μηι。對在25 0 °C下24小時加熱試驗後的膜進行評價，膜的 • C/A1原子數比爲0.3(實施例16)、〇.7(實施例17)、1.0(實施例1 8)時，在色調變化和密合性實驗時沒有發現膜的脫離，但膜的C/A1原子數比爲0.1(比較例10)、〇(比較例1 1) 時，在密合性實驗中發生了膜的脫離，且隨著反射率的改變色調變化也顯著。對比較例1 〇和1 1的膜截面透過TEM 觀察，膜表面和聚醯> 亞胺一側的膜被氧化，而實施例1 6〜 1 8的膜中沒有發現氧化。由此認爲，比較例1 〇和比較例 1 1中膜密合性降低和色調變化是由於膜氧化的原因。 ® 由此可見，如實施例1 6〜1 8的耐熱遮光薄膜可以作爲在高溫環境下使用的液晶投影機的光圈等部件使用，而比較例1 0、1 1不能在高溫環境下使用。 (實施例19) 採用膜構成、膜厚度、組成爲碳化鈦膜（膜厚200 nm， C/Ti原子數比：0.8)/碳化矽膜（膜厚20nm，C/Si原子數比： 0.5)的兩層構造的遮光膜製造耐熱遮光薄膜。採用第3圖的捲取式濺射裝置，在與實施例1相同種類、厚度、粗糙 -48- 200841038 度的聚醯亞胺薄膜的兩面上依次形成碳化鈦膜和碳化矽膜。胃胃例1同樣地測定成膜時薄膜表面溫度，爲i 90 〜2 1 0 °C °聚醯亞胺的種類、厚度、表面粗糙度與實施例1 相同。製得的耐熱遮光薄膜的評價（光學性能、耐熱性）以與實施例1同樣的方法、條件進行。製得的耐熱遮光薄膜的構成、特性一並列於表1。確認層積的遮光膜的結晶性良 ® 好。另外’對膜表面在濺射的同時由XPS分析各層含氧量 (0/Me)’SiC膜層中0/Si原子數比爲o.^Ti/C膜層中〇/Ti 原子數比爲0.2。表面電阻和表面粗糙度、可見光區域的光密度和光澤度性能獲得與實施例1同等的水準。可見光區域的最大反射率爲4 %，與表面沒有形成碳化矽膜的僅使用碳化鈦膜的實施例1相比，反射率顯著降低。這是因爲，通過層積光學常數不同的碳化鈦膜與碳化矽膜，發現光干涉產生了防 ^ 止反射的效果，從而使其低反射化。另外，在25 0 °C下24小時的加熱試驗後的膜的密合性評價中，沒有彎曲和膜的脫離，可見具有與實施例1同等的耐熱性能。由此可見，這種耐熱遮光薄膜可以作爲在高溫環境下使用的液晶投影機的光圈等部件使用，特別是在投影機鏡頭附近的要求有低反射性的部件用途中有用。 (實施例20) -49- 200841038 遮光膜採用碳化鈮、碳化鉬、碳化釩、碳鉻或碳化給，與實施例1〜9、比較例1〜4的形同樣地進行實驗，具有同樣的傾向。當C/Nb C/Mo原子數比、C/V原子數比、C/Ta原子數ί 子數比、C/Hf原子數比爲0.3以上時，確認可性優良的遮光薄膜。任一者都爲結晶性良好的含氧量O/Me原子數比爲0.5以下時，膜厚爲即可顯示充分的遮光性。 _ (實施例21) 除了使耐熱樹脂薄膜改爲厚度爲25 μπι的乙二醇酯（PEN)片，使成膜時薄膜表面溫度爲以外，在與實施例 1完全相同的條件下製作膜。靶的種類、薄膜的表面粗糙度與實施例1 製得的耐熱遮光薄膜的評價（光學性能、實施例1同樣的方法、條件進行。在與實施例行碳化鈦膜的濺射時，薄膜的表面溫度通過紅胃度計，由捲取式濺射裝置的石英玻璃視窗測定，〜158它。可見光區域的光密度、反射率、光澤度等實施例1同等的水準。並且，確認表面電阻値表面算術平均高度Ra爲0.4 μηι。遮光膜由同樣爲結晶性良好的膜。遮光膜中含碳量、含氧量相同。200841038 IX. Description of the Invention: The present invention relates to a heat-resistant light-shielding film and a method of manufacturing the same, and an aperture or light amount adjusting device using the same, and more particularly to a lens shutter as a digital camera, a digital camera, and the like Use of optical instrument components such as shutter blades or aperture blades, fixed apertures in monitor lens units mounted on automobiles, or diaphragm blades of light amount adjustment devices of projectors, shading, heat resistance, slidability, low gloss, and electrical conductivity An excellent heat-resistant light-shielding film, a method for producing the same, and an aperture or light amount adjusting device using the same. [Prior Art] At present, since the shutter speed is increased, the operation and the stop are performed in a very short time, so that the shutter blade and the diaphragm blade for the camera are required to be lightweight and have high sliding property. Further, since they are members that block light in front of a photosensitive member such as a film or a photographic element such as a CCD, they are at least light-shielding. Further, since the blades for optical instruments are operated in such a manner that a plurality of blades overlap each other, it is necessary to have lubricity in order to work smoothly. Further, in order to prevent light leakage between the blades, the reflectance of the surface is required to be low. Depending on the environment of use, there is a case where high temperature occurs inside the camera, and therefore heat resistance is required. In addition, the light-shielding film used for the light-quantity adjustment aperture blade of a liquid crystal projector for displaying an image viewing projection device such as a home theater is required to have the same performance as a digital camera or a digital camera, and is particularly required for heat resistance. The performance is higher. Usually, the light-shielding film is applied as a substrate using a plastic film such as polyethylene terephthalate (PET) or a metal film such as SUS, SK material or A1. In the case of the camera, when a light-shielding film having a metallic substrate is used as the shutter blade or the aperture blade, friction between the metal plates causes a large noise when the blade member is opened and closed. Further, in the liquid crystal projector, in order to alleviate the change in the brightness of each image when the image is changed, it is necessary to move the blade at a high speed, and friction noise is repeatedly generated between the blades. Further, in order to reduce such noise, the blade is moved at a low speed, and at this time, if the amount of light is not additionally adjusted for the change of the image, the image is unstable. ^ From the viewpoint of the above problems and weight reduction, in the structure of a light-shielding film in recent years, the use of a plastic film for a substrate has become mainstream. In addition, from the viewpoint of dust generation, electrical conductivity is also required. From the above, it is understood that the necessary properties of the light-shielding film include high light-shielding property, heat resistance, low gloss, slidability, electrical conductivity, and low dust generation. In order to satisfy the performance of these light-shielding films, proposals have been made to adopt various materials and film structures. For example, Patent Document 1 discloses a light-shielding film which is impregnated with conductive black particles such as carbon black or titanium black in order to absorb light emitted from a lamp source or the like from the viewpoint of light-shielding property, low gloss property, and conductivity. In a resin film such as a polyethylene terephthalate (PET) film, it has light-shielding properties and electrical conductivity, and one or both surfaces of the light-shielding film are roughened to have low gloss. Patent Document 2 discloses a light-shielding film which is coated with a thermosetting resin layer of a black pigment such as carbon black having a light-shielding property and conductivity, a lubricant, and a matting agent, to have a light-shielding property and a conductive property. Sex, lubricity, low gloss. -7-200841038 Patent Document 3 discloses a light-shielding member in which a hard carbon film is formed on a surface of a metal blade material such as an aluminum alloy. Patent Document 4 discloses a light-shielding blade structure for reinforcing a prepreg sheet of a thermosetting resin containing carbon fibers on both sides of a plastic substrate in order to increase the rigidity of the light-shielding blade. The light-shielding film has been widely used as a light-shielding blade for optical instruments such as a digital camera, a digital camera, and a liquid crystal projector. In recent years, liquid crystal projectors have been increasingly demanding high-quality images that can be seen in bright environments such as living rooms. As described above, in order to increase the brightness of the image quality, the output power of the lamp light source is increased, and thus the temperature in the diaphragm device for adjusting the amount of light tends to increase. Since the light-shielding film for adjusting the amount of light is irradiated with high-power light, an environment in which the light-shielding film is easily thermally deformed is formed. The substrate of the light-shielding film, for example, a light-shielding film made of polyethylene terephthalate (PET) as a substrate, is widely used because of its small specific gravity, but when the output power of the light source is large, due to the polyethylene terephthalate The diester (PET) has a low heat distortion temperature and a small mechanical strength such as tensile modulus, and thus there is a possibility that the shading blade is deformed by vibration or impact generated during the movement or during braking. Further, in order to impart low gloss and slidability to the light-shielding film, roughening treatment was carried out by sandblasting. This treatment further scatters incident light to lower the gloss of the surface, and has an effect of improving visibility. According to the above treatment, it is considered that even if the light-shielding films are in contact with each other, since the contact area between the light-shielding films is not increased, the sliding property can be prevented from being lowered. 200841038 In a digital camera, a digital camera, or a liquid crystal projector, a light-shielding film is used as a shutter blade, a diaphragm blade, and the like, and a plurality of sheets must be adjacent and overlapped. Therefore, for a light-shielding film using an organic component light-shielding material, a lubricant, and a light-removing agent, The temperature and humidity of digital cameras, digital cameras and LCD projectors are even worse. The fixed diaphragm ' used in the lens unit for monitors mounted on automobiles can be used even at a high temperature of 1 〇〇 1 5 5 °C. In particular, in the liquid crystal projector, as described above, the lamp light source is increased in power in recent years, and the temperature in the device (light amount adjusting device, aperture device) rises to about 200 °C. . In such a severe environment, when the above-mentioned conventional light-shielding film is used, deformation, discoloration, and the like occur, and it is not preferable in terms of durability, and there is a problem in practical use. In addition, since the light-shielding film is thermally deformed in a high-temperature environment of 150 ° C or higher, even the light-shielding film having a fine uneven structure on the surface has a large thermal deformation, and the light-shielding films are in contact with each other, so that high speed cannot be performed. Movement, irregular friction increases, resulting in slidability, gloss deterioration, etc., and the possibility that digital cameras, digital cameras, and liquid crystal projectors cannot perform their original functions. In addition, although the roughening treatment of the base plastic film is to form fine irregularities on the base plastic film, the adhesion between the substrate and the coating film on the substrate is improved, and the surface gloss is reduced. 'However', when the sand blasting method is used, since the roughness of the surface of the film depends on the material of the sprayed material, the particle size, the ejection pressure, and the like, although the sprayed material having a large particle size can be removed from the surface of the film by washing with water washing or brushing, the particle diameter is Less than 1 (4) The small particles of 200841038 will be quite even on the film after washing and cannot be completely removed. If the spray material remains, in the high temperature environment, 'the thermal expansion coefficient of the film and the film on the film is different, the heat should be removed and the spray material is detached from the film, which has an adverse effect. The original function [Patent Document π Japanese Patent Application Laid-Open No. Hei No. Hei No. Hei No. Hei No. Hei 4-9802 [Patent Document 3] Japanese Patent Laid-Open No. 2 1 1 6 8 3 7 [ Patent Document 4] Japanese Patent Laid-Open No. Hei. No. 75-35. SUMMARY OF THE INVENTION Therefore, it is an object of the present invention to provide a digital position at a high temperature during processing of a light amount adjusting device of a liquid crystal projector which is heat-resistant to a high temperature. The shutter blade of the camera has a fine concavo-convex structure on the surface of the base film, and does not exhibit slidability and gloss deterioration, and does not have excellent durability, and does not cause film detachment and excellent D| conductivity. The inventors of the present invention have found that the heat-resistant resin film having fine unevenness on the above-mentioned prior art surface is maintained at a temperature of 1 5 5 ° as a resin film (A) having a heat resistance of 3 1 55 ° C or higher. In the state of C or more, a crystalline metal carbide film having a specific thickness of 1 (MeC in the specification 1) is used as the light-shielding film (B), so that a part of the metal alloy strength difference formed in the light-shielding film can be obtained. The problem is that the film is removed from its surrounding components. The light film of the bulletin is used to act as a film or a fixed aperture, and the light-shielding film is deformed and discolored, and the problem of the material being peeled off is caused by the use of a film having a lipid film. The method is formed with flaws, and sometimes it is recorded that the crucible is at a high temperature environment of -15 200841038 at 155 ° C, and it is not deformed even under a high temperature environment of about 200 ° C depending on the type of the substrate. The heat-resistant light-shielding film which retains its characteristics (light-shielding property, low glossiness, slidability, chromaticity, and low reflectivity) can be used as a diaphragm member of a digital camera, a digital camera, or a liquid crystal projector, and has completed the present invention. That is, according to the first invention of the present invention, there is provided a heat-resistant light-shielding film comprising a resin film substrate (A) having heat resistance of 155 ° C or higher and formed on the surface or both sides of the resin sheet substrate (A) The heat-resistant light-shielding film of the light-shielding film (B) of the crystalline metal carbide film (MeC), the thickness of the light-shielding film (B) is 100 nm or more, and the surface roughness is 0. 1~2. 1 μηι (arithmetic mean height Ra), and the atomic ratio (C/Me) of the carbon element (C) to the total metal element (Me) in the metal carbide film (MeC) is 0.3 or more. Further, according to a second aspect of the present invention, there is provided a heat-resistant light-shielding film, characterized in that in the invention of the invention, the resin film substrate (Α) is derived from polyethylene naphthalate (PEN), polyphthalamide One or more selected from the group consisting of amines, aromatic polyamines, polyphenylene sulfides, and polyether oximes. According to a third aspect of the present invention, in a heat-resistant light-shielding film, the heat resistance of the resin film substrate (A) is 2 〇 0 ° C or more. According to a fourth aspect of the invention, the heat-resistant light-shielding film is characterized in that the resin film base material (a) has a thickness of 5 to 200 μm. According to a fifth aspect of the present invention, there is provided a heat-resistant light-shielding film, characterized in that in the first to fourth inventions, the surface roughness of the resin film substrate (Α) 200841038 is 0. 2~2. 2 μιη (arithmetic mean height Ra). According to a sixth aspect of the present invention, in a heat-resistant light-shielding film, the light-shielding film ((9) has a thickness of 110 to 550 nm. According to the seventh invention of the present invention, a light-shielding film is provided. The heat-resistant light-shielding film is characterized in that in the first to sixth inventions, the metal carbide film (Me C) is made of tantalum carbide, titanium carbide, aluminum carbide, tantalum carbide, tungsten carbide, molybdenum carbide, vanadium carbide, carbonization, carbonization Further, one or more materials selected from the group consisting of chrome or carbonization are used as the main component of the invention. Further, according to the eighth aspect of the invention, there is provided a heat-resistant light-shielding film characterized by the metal carbide film (MeC) of the first to seventh inventions. The atomic ratio (C/Me) of the medium carbon element (C) to the total metal element (Me) is 0. 5 or more. Further, according to a ninth aspect of the present invention, there is provided a heat-resistant light-shielding film characterized by the oxygen content (〇) in a metal carbide film (MeC) relative to all metal elements (Me) The original product number ratio (O/Me) of the oxygen element (〇) is 〇·5 or less. According to a tenth aspect of the invention, there is provided a heat-resistant light-shielding film characterized in that the light-reflecting film (B) has a light reflectance of 10% or less at a wavelength of from 3,800 to 78 Onm in the first to ninth inventions. Further, according to the first aspect of the invention, the heat-resistant light-shielding film is characterized in that, in the first to tenth aspects of the invention, the optical density as a light-shielding index is 4 or more at a wavelength of 380 to 780 nm. According to a second aspect of the present invention, there is provided a heat-resistant light-shielding-12-200841038 film, characterized in that the composition and film are formed on both surfaces of the resin film substrate (A) in any one of the first to nth inventions. The same metal carbide film (MeC). According to a third aspect of the present invention, there is provided a method of producing a heat-resistant light-shielding film, comprising the resin film substrate having heat resistance of 155 ° C or higher according to the first to twelfth inventions. (A) and a method for producing a heat-resistant light-shielding film of a metal carbide film (MeC) formed on the surface or both surfaces of the resin film substrate (A) as the light-shielding film (B), the surface roughness is 0. 2~2. A resin film substrate (A) of 2 μm (arithmetic average height Ra) is placed in a sputtering apparatus, and a thickness is formed on the resin film substrate (A) by a sputtering method using a metal carbide target under an inert gas atmosphere. It is above lOOnm and has a surface roughness of 0. 1~2. 1 μπι (arithmetic mean height Ra), and the atomic ratio (C/Me) of the carbon element (C) to the total metal element (Me) in the metal carbide film (MeC) is 0. 3 or more crystalline metal carbide film (MeC). Further, according to a fourteenth aspect of the invention, there is provided a method of producing a heat-resistant light-shielding film, characterized in that in the third invention, a heat-resistant light-shielding film in which a metal carbide film (MeC) is formed is further placed on a sputtering In the apparatus, a metal carbide film (MeC) was formed on the side of the resin film substrate (A) where the metal carbide film (MeC) was not formed by sputtering. According to a fifteenth aspect of the invention, there is provided a method for producing a heat-resistant light-shielding film, wherein the filming pressure of the light-shielding film (B) at the time of film formation is 0. 2~l. 〇Pa. Further, according to a sixteenth aspect of the invention, there is provided a method for producing a heat-resistant light-shielding thin te, characterized in that, in any one of the inventions of the first to third embodiments, the film (B) is formed by filming The surface temperature of the resin film substrate (A) is 180 ° C or higher. Further, according to a seventeenth aspect of the present invention, a method of producing a heat-resistant light-shielding film according to any one of the thirteenth to sixteenth aspects, wherein the resin film substrate (A) is wound into a cylindrical shape and is provided in a sputtering apparatus When the winding portion is wound up to the winding portion, the film conveying portion is formed by sputtering. According to a ninth aspect of the invention, there is provided a method of producing a heat-resistant light-shielding film, characterized in that in any one of the first to third aspects, the resin film substrate (A) is rolled into a cylindrical shape and is splashed. When the film transporting portion of the projecting device is transported to the winding portion by the winding portion, the film is formed by a sputtering method, and the resin film substrate (A) is not cooled during film formation, and is suspended in the film forming chamber. The film formation was carried out in the state. On the other hand, according to the nineteenth aspect of the invention, there is provided a diaphragm excellent in heat resistance obtained by processing the heat-resistant light-shielding film according to any one of the first to twenty-twoth inventions. According to a twentieth aspect of the invention, there is provided a light quantity adjusting device using the heat-resistant light-shielding film according to any one of the first to twenty-second aspects. A heat-resistant light-shielding film of the present invention has an arithmetic mean height Ra of 0. 2~2. A metal carbide film having a specific thickness is formed on the heat-resistant resin film substrate having a surface roughness of 2 μm, whereby a heat-resistant light-shielding film having low gloss, low reflectivity, and conductivity can be realized. Further, since the metal carbide film is formed by a sputtering method, a dense surface state can be formed as compared with the light-shielding film obtained by the previous coating step, and the surface is more excellent in abrasion resistance and abrasion resistance. Further, the heat-resistant light-shielding film of the present invention has a 14·200841038 crystalline metal carbide film as a light-shielding film on a resin film substrate having a heat resistance of 15 5 ° C or higher, and thus the metal carbide material is at 15 5 5 In the high-temperature environment of 30,000 °C or in a high-humidity environment, it is not easily oxidized, and the light-shielding property does not change. Therefore, the heat resistance is superior to that of the heat-resistant light-shielding film which uses a metal film which is easily oxidized as a light-shielding film. Further, since the heat-resistant light-shielding film of the present invention has a symmetrical film structure in which the metal carbide film is centered on the heat-resistant resin film, the film is not deformed by the film stress at the time of film formation, and the productivity is excellent. Further, by optimizing the film formation conditions by the sputtering method of the metal carbide film of the present invention, the above metal carbide film can be formed into a dense film, which is made even at 1 5 5 to 300 due to the dense outermost film. In the high temperature environment of °C, the light-shielding vane using the heat-resistant light-shielding film does not cause detachment of the film during the operation. Therefore, when the base film is roughened, specifically by the sandblasting method, the surface of the film is treated. There is no possibility that the accompanying adhered spray material is detached. The light quantity adjusting device of the present invention uses a light-shielding blade manufactured by the above-mentioned heat-resistant light-shielding film as compared with a light amount adjusting device which has previously been made of a light-shielding blade made of a heat-resistant light-shielding film which is applied with a heat-resistant paint on a metal foil plate, Since the film is made of a substrate and is light in weight, it can improve slidability when mounted on a diaphragm blade or the like, and can reduce the size of the drive motor and contribute to cost reduction. Therefore, the heat-resistant light-shielding film of the present invention can be used particularly as a diaphragm member for a light amount adjusting device of a liquid crystal projector having heat resistance or a fixed diaphragm member in a monitor lens unit mounted on a vehicle. Moreover, it can also be used as a shutter blade of a digital camera or a digital camera, and is used in the industry as -15-200841038. [Embodiment] Hereinafter, the heat-resistant light-shielding film of the present invention, a method for producing the same, and a use for a light amount adjusting device and a diaphragm will be described with reference to the accompanying drawings. 1. Heat-Resistant Light-Shielding Film The heat-resistant light-shielding film of the present invention is characterized in that it comprises a resin film substrate (A) having heat resistance of 155 ° C or higher and a crystalline metal carbonization formed on one or both sides of the resin film substrate (A). The heat-resistant light-shielding film of the light-shielding film (B) of the film (Me C), the thickness of the light-shielding film (B) is 100 nm or more, the surface roughness is 〇·1 to 2·1 μmη (arithmetic average height Ra), and the metal carbide The atomic ratio (C/Me) of the carbon element (C) to the total metal element (Me) in the film (Me C) is 0.3 or more. Low gloss and low reflection of the heat-resistant light-shielding film can be achieved by forming a light-shielding film having a surface roughness as described above, or by coating the surface of the light-shielding film with a metal carbide to have the same surface roughness. When used as a blade of a digital camera fixed aperture or mechanical shutter device aperture, or a blade component of a liquid crystal projector light aperture device, scattered light generated by reflected light can be avoided in the optical system. Fig. 1 and Fig. 2 are schematic views showing the constitution of such a heat-resistant light-shielding film of the present invention. The heat-resistant light-shielding film of the present invention comprises a resin film substrate 1 as a substrate, and a metal carbide film 2 formed on the surface thereof. Further, the surface roughness of the metal carbide film 2 is 〇. 1~2. 1 μπι (arithmetic mean height Ra)' is preferably 0. 2~2. 0μιη, the best is 0. 3~1·9μπι. If it is less than 0·1μιη', it is not good from the viewpoint of low gloss, and if it exceeds -16-200841038. 1 μm is not preferable from the viewpoint of easily causing surface defects. The metal carbide film 2 may be formed on one surface of the resin film substrate as shown in Fig. 1, but it is preferably formed on both surfaces as shown in Fig. 2 . When formed on both surfaces, it is more preferable that the film of each surface has the same material and thickness, so that it is a symmetrical structure centering on the resin film substrate. The film formed on the substrate is a major factor in deformation due to stress on the substrate. The stress-induced deformation is sometimes found in the heat-resistant light-shielding film immediately after film formation, and particularly if it is heated to 155 to 300 ° C, the deformation is easily increased. However, since the material and thickness of the metal carbide film formed on both surfaces of the substrate are the same as described above, the metal carbide film has a symmetrical structure centering on the substrate, and even under heating conditions, it is easy to achieve a balance of the maintenance stress. Flat heat-resistant light-shielding film. (A) Resin film base material The resin film base material (A) used in the heat-resistant light-shielding film of the present invention is not particularly limited as long as it is a heat-resistant resin film base material having heat resistance of 155 ° C or higher. Preferably, it is composed of one or more selected from the group consisting of polyethylene naphthalate, polyimine, aromatic polyamine, polyphenylene sulfide or polyether maple. Among them, polyethylene naphthalate has a heat resistance of about 200 ° C and can be used in an environment of 155 to 20,000 ° C, which is very inexpensive and useful as an industrial material. Further, the heat resistance of the polyimide film, the aromatic polyamide, the polyphenylene sulfide or the polyether oxime is 200 ° C or higher, and it can be used in an environment of 200 ° C or higher. In particular, the maximum heat resistance temperature of polyimine is higher than 300 ° C, which is the best film. Further, the resin film used as the substrate may be composed of a transparent resin -17-200841038, or may be composed of a colored resin in which a pigment is kneaded, and has heat resistance of 15 5 ° C or higher. Here, the film having a 155 degree means a material having a glass transition temperature of 155 ° C or higher and for the absence of a glass transition temperature, i 5 5 . It will not deteriorate under the circumstance. The material of the resin material, in consideration of mass productivity, is a flexible material which can be roll-coated by a sputtering method. The thickness of the resin film substrate is preferably from 5 to 200 μm, and is preferably from 10 to 150 μm, most preferably from 20 to 125 μm. Since it is less than ®, the workability is poor, and the film is liable to cause damage and creases. When it is larger than 200 μm, it is not possible to incorporate a plurality of light-shielding blades in the apparatus for adjusting the aperture of the miniaturization. Further, as the heat-resistant light-shielding film substrate of the present invention, the arithmetic mean height Ra of the surface of the tree is preferably 0. Fine concavo-convex structure of 2~2·2μπι, special fg~2·1 μπι. If Ra is less than 0. 2 μηι, which adheres to the metal carbide film formed on the surface of the film, and obtains sufficiently low gloss and low reflectivity. Further, if Ra is excessively large, the unevenness of the surface of the film is too large, and the recess cannot form metal carbonization. To cover the surface of the film to obtain sufficient light-shielding property, the thickness of the metal carbon becomes thick, and the cost is increased, which is not preferable. The arithmetic mean height, also referred to as the arithmetic mean roughness, is the reference length in the mean line direction of the curve, and the absolute sum of the deviations from the average line to the measurement curve averages the unevenness on the surface of the resin film. Formed on the surface of the film. For example, it can be processed by nano-printing or by spraying, but it is necessary to use a heat-resistant film, and the above temperature is required to be surrounded, and more preferably, the surface missing device or the film of light is 5 μπι, I has 0. 3 Cannot be achieved and can not be · 2 · 2 μ m, the film of the film, if the film is sampled from the roughness sample. Surface treatment -18- 200841038 The material is processed to form a predetermined surface relief structure. When roughening is performed, it is usually the case that the blasting material is processed by roughening of the sand, but the blasting material is not limited to sand. It is possible to form irregularities on the surface of the film while transporting the film. However, since the optimum Ra値 unevenness depends on the conveying speed of the film in the roughening treatment and the type and size of the sprayed material, it is necessary to optimize these conditions for surface treatment. So that the arithmetic mean height Ra値 of the film surface is 〇. 2~2. 2 μιη. The roughened film is subjected to drying after washing and removing the sprayed material. When a metal carbide film is formed on both sides of the film, both sides of the film are roughened. (Β) Light-shielding film (metal carbide film) The heat-resistant light-shielding film of the present invention also has sufficient heat resistance at a high temperature of 155 °C. In addition to the heat resistance of the resin film substrate, the light-shielding metal carbide film also has heat resistance. Generally, since the metal film is oxidized, the transparency is increased, and therefore, when a metal film is used as the light shielding film, it is necessary to impart oxidation resistance. The light-shielding film material used in the heat-resistant light-shielding film of the present invention is a metal carbide film which is more excellent in oxidation resistance than a normal metal film. The metal carbide film (M e C ) of the present invention is preferably a group consisting of tantalum carbide, titanium carbide, aluminum carbide, tantalum carbide, tungsten carbide, molybdenum carbide, vanadium carbide, carbonized giant, chemically sold, and carbonized bell. One or more materials selected as the main component. These metal carbide films have oxidation resistance not only at 1 5 5 to 300 ° C compared to previous metal films (yttrium, titanium, aluminum, tantalum, tungsten, molybdenum, vanadium, giant, zirconium, niobium). And because it is a hard material, the wear resistance is also better. In contrast, when the previous metal film (矽, titanium, aluminum, tantalum, tungsten, molybdenum, -19-200841038 vanadium, giant, zirconium, nitrile) is used as the light-shielding film, it is not sufficiently resistant at the above high temperature. Oxidizing property and hardness, it is necessary to apply other materials (metal oxide, DL, C, etc.) having oxidation resistance and hardness as a protective film on the surface thereof, which complicates the structure and increases the cost. Further, with respect to the composition of the metal carbide film (Me C) used in the present invention, the ratio of the carbon element (C) to the total metal element (Me) in the film, the C/Me atomic ratio is 0·3 or more. , preferably 〇 . 5 or more, especially good is 0. 7 or more. Because 'if the C/Me atomic ratio is insufficient. 3. Oxidation resistance is not obtained under high temperature ® heating at 155~300 °C. The metal carbide film which is a light-shielding film formed on the resin film must be a crystal film. Since the crystal film can exert a strong adhesiveness to the resin film substrate. In the case of an amorphous film, crystallization of the film occurs when used in a high temperature environment. When the crystallization of the film occurs, not only discoloration but also film stress is generated in the portion where crystallization occurs, and the stress of the heat-resistant light-shielding film is unbalanced, which tends to cause deformation, which is a problem. The metal carbide (Me C) film is a material which can invade the carbon element (C) in the metal component (Me) crystal, and is less likely to be crystallized than the metal film of the metal component (Me). Further, since the ratio of the covalent bond of the bond between the elements is increased by invading the carbon element into the crystal of the metal component, crystallization is more difficult to occur than the metal material composed of the metal bond containing no carbon element. . In the case of a film having a C/Me atomic ratio of 〇·3 or more which can generate heat resistance, crystallization is particularly difficult to occur. Further, whether or not the metal carbide film is a crystal film can be evaluated by X-ray diffraction measurement for the presence or absence of a diffraction peak, or by examining the presence or absence of crystal grains by observing the film cross section. If the crystallinity is high, -20- 200841038 has a clear diffraction peak as shown in Fig. 6. Further, as described above, the surface roughness of the metal carbide film (Me C) of the present invention must be 0. 1~2. 1 μιη (arithmetic mean height Ra). More preferably 0. twenty two. 0 μ m, the best is 〇. 3~1. 9 μ m. If less than 0. 1 μ m is not good from the viewpoint of low gloss, and if it exceeds 2. 1 μηι is not good from the viewpoint of easy surface defects. Further, the metal carbide film (MeC) of the present invention has a thickness of from 10 10 to 550 nm, preferably from 110 to 400 nm, more preferably from 110 to 300 nm, and if the film thickness is less than 1 1 〇 nm, film transparency occurs. It is not good to get a full shading function, so it is not good. However, if the film thickness is thick, the light-shielding property is good, but if it exceeds 5 5 Orim, the material cost and the film formation time increase, resulting in an increase in manufacturing cost and an increase in stress of the film, resulting in easy deformation. By making the metal carbide film have the thickness as described above, sufficient light blocking property, low film stress, and low manufacturing cost can be achieved. In addition, to form such a metal carbide film, the surface roughness Ra must be 0. 1~2. 1 μιη. Thus, the light refraction rate at the wavelength of 380 to 780 nm can be reduced to less than 10%. The light-shielding property is preferably 4 or more, or the light transmittance is 1% or less, and particularly preferably 0%. Further, the metal carbide film may contain a nitrogen element. The introduction of the nitrogen element in the metal carbide film can be carried out by introducing a nitrogen-containing additive gas into the sputtering gas at the time of film formation of the metal carbide film, but the additive gas can be used without using the above-mentioned additive gas. These elements can also be introduced into the target with nitrogen. Further, in order to maintain high adhesion to the resin film and high light-shielding property, it is preferred that the metal carbide film used in the present invention contains no oxygen as much as possible. However, the oxygen contained in the target or the oxygen remaining in the deposition chamber is taken into a part or the whole of the metal film at the time of film formation, and the metality, the high light-shielding property, and the high adhesion to the resin film are not impaired. It doesn't matter. The content of oxygen which is inevitably contained in the metal carbide film (MeC) is preferably 0. The ratio of the 〇/Me atom to the oxygen element (0) of all the metal elements (Me) is preferably 0. 5 or less, more preferably 0. 1 or less. This is because the oxygen element (0) contained in the O/Me atomic ratio exceeds 0. 5, the light transmittance is increased at a wavelength of 380 to 780 nm ^ (the optical density becomes small), so that sufficient light shielding performance cannot be obtained. If the O/Me atomic ratio is 0. When it is 5 or less, even if it is a film thickness of 1 1 〇 to 400 nm or less, sufficient light-shielding property can be exhibited, and the manufacturing cost can be reduced. However, even if the Ο /M e atomic ratio exceeds 0. In the case of 5, if it is 0. 8 or less, by increasing the film thickness to 400 to 550 nm, it also has sufficient light blocking properties. The O/Me atomic ratio in the metal carbide film can be measured by, for example, X P S (X-ray photoelectron spectroscopy). Since the film has a large amount of oxygen bonded to the outermost surface, the O/Me atomic ratio in the film can be quantified by measuring the depth of 20 to 3 Onm after sputtering under vacuum. The metal carbide film of the heat-resistant light-shielding film of the present invention may be composed of a laminated film of a plurality of metal carbide films having different compositions (content and type of metal elements, carbon content, nitrogen content, and oxygen content). By stacking a plurality of metal carbide films having different optical constants, an optical interference effect can be obtained to control the reflection performance. Further, the heat-resistant-22-200841038 light-shielding film of the present invention is thinly coated on the surface of the above-mentioned metal carbide film with another film having lubricity or low friction without damaging the features of the present invention (for example, fluorine-containing It is also possible to use an organic film or the like. 2. Method for producing heat-resistant light-shielding film The method for producing a heat-resistant light-shielding film of the present invention is characterized by comprising a resin film substrate (A) having heat resistance of 155 ° C or higher and a resin film substrate as a light-shielding film (B) A) - a method for producing a heat-resistant light-shielding film of a metal carbide film (Me C) formed on the surface or both sides, which has a surface roughness of 0. A resin film substrate (Α) of 2 to 2·2 μm (arithmetic average height Ra) is placed in a sputtering apparatus, and a metal carbide target is used in an inert gas atmosphere by a sputtering method on the resin film substrate (A). The thickness is formed above 1 〇〇 nm and the surface roughness is 0. 1 to 2·1 μm (arithmetic average height Ra), and the atomic ratio (C/Me) of the carbon element (C) to the total metal element (Me) in the metal carbide film (MeC) is 0. 3 or more crystalline metal carbide film (MeC). As a film forming method of the metal carbide film, gas phase synthesis such as C V D or P V D is preferable, and the sputtering method or the ion plating method is industrially preferable because a dense and high-quality film can be uniformly formed over a large area. When the film is formed by a sputtering method or an ion plating method, it is characterized in that the film is denser than the ink coating method and the vacuum evaporation method, and the adhesion to the lower layer (substrate or film) is better. This property is remarkable when the heat-resistant light-shielding film is used in a high temperature environment of 155 to 300 °C. When the film is formed by the ink coating method, the color tone change caused by the film peeling and film oxidation is found, and when it is formed by the sputtering method according to the present invention, this possibility is small, and therefore it is preferable. The sputtering method is a film forming method which is effective when a film having a low vapor pressure is formed on a substrate or when a precise film thickness is to be controlled -23-200841038. Usually, under a argon gas pressure of about 1 OPa or less, a substrate is used as an anode, and a sputtering target as a film material is used as a cathode, and a glow discharge is induced between them to generate an argon plasma, and argon in the plasma. A method in which a cation strikes a sputtering target of a cathode, and a particle of the sputtering target component is impact-ejected, and the particle is deposited on a substrate to form a film. The above sputtering method is classified according to the method of generating argon plasma, and a high frequency plasma is used for the high frequency sputtering method, and a direct current plasma is used for the direct current sputtering method. Further, the magnetron sputtering method is a film forming method in which a magnet is attached to the back surface of a sputtering target to concentrate the argon ion paste directly on the sputtering target, and the impact efficiency of the argon ion can be improved even under a low pressure. A method of obtaining a metal carbide film by a sputtering method includes a method of using a metal carbide target, and a method of performing sputtering deposition by introducing a hydrocarbon gas as a carbon element source into a sputtering gas using a metal target. Further, a method of simultaneously sputtering a metal target and a carbon target into a film to form a metal carbide film in which a metal component and a carbon component are deposited on a substrate is also included. Among them, the method using a metal carbide target, because of the stable film composition and performance, can be sputtered into a film in pure argon gas, which is simple and preferable. When a metal carbide film is formed by a sputtering method on a resin film, for example, a coiling type sputtering apparatus shown in Fig. 3 can be used. In the apparatus, the tubular resin film substrate 1 is attached to the winding roller 5, and the vacuum chamber 7 as a film forming chamber is evacuated by a vacuum pump 6 such as a turbo pump, and then is output from the winding roller 5. The film 1 passes through the surface of the cooling can drum 8 on the way and is taken up by the take-up roll 9. On the opposite side of the surface of the cooling can drum 8, a magnetron cathode 10 is provided, which is provided with a target i as a film material. Further, the film transporting portion j constituted by the take-up rolls 5, -24 - 200841038, the cooling can roller 8, the take-up roll 9, and the like are separated from the magnetron cathode 10. First, the cylindrical resin film substrate 1 is placed on a roll, and the vacuum pump 6 such as a turbo molecular pump is used to evacuate the vacuum roll 7 to the resin film substrate 1 by the evacuation roller 5, and the roll is rolled up by the cooling roll. At the same time, the cooling can drum 8 and the cathode are placed on the surface of the cooling can roller to be bonded to the resin film substrate. It is desirable that the resin film substrate is heated and dried at a temperature of about 30 Å before sputtering. In the heat-resistant light-shielding film of the present invention, a film is formed on a resin film substrate by a direct current method using a metal carbide sputtering target in a metal carbide argon atmosphere. The metal carbonization as the light-shielding film formed on the resin film is required to be a crystal film. The metal carbide (MeC) film is a material which can invade the carbon element (c) in the (M e) crystal, and is less likely to be crystallized than the metal metal film. Further, since the carbon element is intruded into the crystal of the ®, the covalent value of the bond between the elements is increased, and crystallization of the metal material composed of the metal bond containing no carbon element is more difficult to occur. If it is heat-resistant C/Me 0. In the case of a film of 3 or more, crystallization is particularly difficult to occur. In addition, the growth of thin film crystals depends to a large extent on the class and surface shape. It is more difficult to obtain a film having good crystallinity in an organic film on a substrate on which an inorganic material such as an inorganic metal oxide such as a metal carbide film is formed. Further, the surface of the substrate is passed out of the roller 5 through the separator 12. Then, by the surface of ί 8, ί discharges, and 1 becomes a film. The transition temperature film layer is, for example, a magnetron sputter film, as compared with the ratio of the metal component (Me) to the metal component bond, when the number of junction atoms is the seed film of the substrate, The better the s-stability of the substrate is, the more easily the sputtered particles reaching the substrate migrate to form a crystal array, and according to the present invention, the incident sputtered particles are difficult on the surface of the substrate having a large surface unevenness. The migration forms a crystal array, and thus it is difficult to obtain a film having good crystallinity. On the surface of the heat-resistant resin film having a large surface unevenness, a metal carbide film having good crystallinity can be densely formed, and whether or not the heat-resistant light-shielding film excellent in heat resistance and durability of the present invention can be realized. In the present invention, in order to form a dense metal carbide film having good crystallinity by a sputtering method on a surface of a heat-resistant resin film having a large surface unevenness by a metal carbide target, sputtering gas pressure and film formation are as described in detail below. Control of the surface temperature of the film is particularly important. In general, sputtering is performed to form a film by generating a plasma under an inert gas of a pressure of 10 Pa or less. However, it is preferable to obtain a metal carbide film which is excellent in crystallinity for obtaining a light-shielding film which can be used for a heat-resistant light-shielding film. Film formation was carried out under pressure. When a metal carbide film having good crystallinity is formed, the gas pressure at the time of film formation 0 differs depending on the type of the device, etc., and thus it is not possible to uniformly specify ', preferably 1 · 0 P a or less, for example, ruthenium. 2~1. 〇 P a. Thus, a high-energy is obtained by the sputtered particles reaching the substrate (resin film), and a crystalline metal carbide film is formed on the heat-resistant resin film substrate, and the film and the film exhibit a strong adhesiveness. Thus, even if a small amount of the ejection material remains on the resin film substrate, the thermal expansion difference between the ejection material and the metal carbide film does not occur in the high temperature environment of 155 to 300 °C. If the air pressure at the time of film formation is insufficient. At 2 Pa ', the argon plasma in the sputtering method is unstable due to the low gas pressure, so that the film quality of the film formed by the introduction of -26-200841038 is deteriorated. And if not enough. 2Pa, rebounded argon particles enhance the re-sputtering function of depositing a film on a substrate, and easily hinder the formation of a dense film. In addition, when the film is formed, the gas pressure exceeds 1. In the case of 〇pa, since the energy of the sputtered particles reaching the substrate is low, the film is difficult to crystallize and grow, the metal carbide film particles become thick, and a highly dense crystalline film cannot be formed, so that the adhesion to the resin film substrate is weakened. , causing the membrane to detach. Such a film cannot be used for a light-shielding film for heat resistance use. On the other hand, the film surface temperature at the time of film formation has an influence on the crystallinity of the metal carbide film. The higher the surface temperature of the film at the time of film formation, the more easily the sputtered particles form a crystal array, and the crystallinity is improved. However, the heating temperature of the heat-resistant resin film is also limited, and even a polyimide film having the most excellent heat resistance needs to be formed at a surface temperature of 400 ° C or lower. A metal carbide film having a high adhesion to the resin film can be obtained. Therefore, it is particularly important when a heat-resistant light-shielding film which can be used in a high temperature environment is obtained. The optimum film surface temperature at the time of film formation differs depending on the type of the film substrate to be used, and thus cannot be uniformly defined. For example, in order to obtain a heat-resistant light-shielding film to be used in an environment of 100 to 155 ° C, it is preferred. It is above 15 5 °C. Thus, the following heat-resistant light-shielding film which can be obtained even in the environment of 100 ° to 15 ° C, which is excellent in adhesion to the film and dense, and which is excellent in crystallinity and metallization of the film quality, can be obtained. The composition of the film. In this case, it is of course necessary to use a resin film having heat resistance of 150 ° C or higher. In addition, in order to obtain a heat-resistant light-shielding film which can be used at a temperature exceeding 155 ° C, particularly in a high-temperature environment of 200 to 30,000 Å, the film surface temperature at the time of film formation is preferably from 18 to 22 ° C. Or above 2 20 °C, the film is resistant to high temperatures below -27- •200841038. Thus, a dense film-like heat-resistant light-shielding film excellent in adhesion to a film having heat resistance of 200 ° C or higher can be obtained. However, in order to obtain a light-shielding film to be used at a temperature of from room temperature to 130 ° C, a film surface temperature of 50 to 100 ° C at the time of film formation is sufficient. However, when the surface temperature of the film is 50 to 10 (TC, it is particularly difficult to obtain a crystalline metal carbide film, and the sputtering gas pressure must be 0. 2~1. Film formation was carried out in the range of 0 Pa. Thus, a heat-resistant light-shielding film comprising a metal carbide film excellent in film adhesion at room temperature to 130 ° C can be obtained. — In addition, the resin film substrate can be naturally heated by the plasma during film formation. By adjusting the gas pressure, the power applied to the target, and the transport speed of the film, the surface temperature of the resin film substrate during film formation can be easily maintained according to the hot electrons injected from the target substrate and the heat radiation from the plasma. At 1 5 5 to 220 °C. The lower the air pressure, the higher the applied power and the slower the film transport speed, the higher the heating effect by the natural heating of the plasma. Even in the case where the film is brought into contact with the cooling can at the time of film formation, the temperature of the film surface is much higher than the temperature of the cooling tank due to the influence of natural heating. However, in the apparatus of Fig. 3, the surface temperature of the naturally heated film is transported by the cooling tank while being cooled by the cooling tank, and therefore depends largely on the temperature of the tank, and is naturally heated as much as possible when film formation is used. The effect is that it is effective to increase the temperature of the cooling tank and slow down the conveying speed. The film thickness of the metal carbon compound film can be controlled by the film transport speed at the time of film formation and the electric power applied to the target, and the slower the transport speed and the larger the power applied to the target, the thicker the film. In addition, Fig. 4 shows a different arrangement of the above-mentioned film transport method -28-200841038. According to this apparatus, since it is a film forming method (floating method) which is formed by sputtering a film without cooling the film by the cooling tank, the natural heating effect can be effectively utilized. In this method, the film is supported by the two support rollers 13 that are away from the target, and the film opposed to the target 11 is not cooled on the back surface, and is suspended and floated in the film forming chamber (vacuum chamber 7). membrane. Since the film forming chamber is a vacuum, the heat accumulated on the film by the irradiation of the target and the plasma is not easily dissipated, so that it can be efficiently heated. Therefore, the actual natural heating effect of 270 °C or more can be easily realized. ^ The surface temperature of the substrate during film formation can be measured by a radiation thermometer, or a temperature label can be attached to the surface of the film in advance, and the temperature of the label can be observed by observing the change in the color of the label after film formation. Thus, a heat-resistant light-shielding film in which a metal carbide film is formed with high adhesion on one surface of the resin film substrate can be obtained. In order to obtain a heat-resistant light-shielding film having a metal carbide film formed on both surfaces, it is further placed in the above sputtering apparatus, and a metal carbide film is formed in this order on the back surface of the resin film substrate by sputtering. Further, in order to form a metal carbide film, a film sputtering apparatus is exemplified, and a method of continuously forming a film is described in detail. However, the present invention is not limited thereto, and a substrate may not be moved during film formation. Batch-type film formation method for thin films. At this time, it is necessary to replace the ambient gas and input the film. Stopping the operation is cumbersome. Further, the base film may be wound into a roll shape and fixed in the apparatus in a state of being cut into a predetermined size. 3. Use of heat-resistant light-shielding film The heat-resistant light-shielding film of the present invention produced by the above-described manufacturing method is formed into a specific shape by punching into a -29-200841038 line without causing end face cracks, and is used as a fixing for a digital camera or a digital video camera. Aperture or mechanical fast blade, or an iris that only passes a certain amount of light, in particular, an aperture blade of a light amount adjusting device (automatic aperture) of a liquid crystal device. In particular, the solid ring in the lens unit of the digital camera for a vehicle is significantly heated by the summer sun, and the heating effect of the liquid crystal projector's adjusting device by the light is remarkable. Therefore, the heat-resistant light-shielding aperture blade produced by processing the heat-resistant light-shielding film has a fixed aperture or mechanical shutter made of the heat-resistant light-shielding film of the present invention in the manufacturing step of assembling the optical component by the reflow step. It is useful because no change in performance occurs in the heating environment in the step. Fig. 5 is a schematic view showing an aperture mechanism of a light amount adjusting device equipped with a heat-resistant light-shielding blade after punching. The heat-resistant light-shielding vane has a guide hole 15 and a hole 19, and the hole 19 is used for fitting it to the guide pin 16 which is electrically coupled to the drive and the pin 1 7 plate 18 which is provided with the control shutter position. Further, the center of the substrate 18 has a portion 20 that allows light to pass therethrough, and the light-shielding blade can have various shapes depending on the structure of the aperture device. Further, the heat-resistant light-shielding film of the present invention can be made lighter by using a resin film as a gene, and can be made lighter. Drives the driving components of the shading blades and reduces power consumption. [Examples] Next, the present invention will be specifically described by way of examples and comparative examples. Further, the evaluation of the obtained heat-resistant light-shielding film was carried out by the following method. The blade is machined so that the sheet 14 14 is provided with the base opening of the machine card, which is small. -30- 200841038 (Optical density, reflectance) The optical density and reflectance of the obtained heat-resistant light-shielding film were measured by a spectrophotometer to determine the light-shielding property and reflectance (positive reflectance) in the visible light region at a wavelength of 380 nm to 780 nm. The optical density as a light-shielding index is converted by the following formula by the light transmittance (T) measured by a spectrophotometer. It is necessary to achieve an optical density of 4 or more and a maximum reflectance of 1%. Optical density = L 〇 g (l/T) (surface gloss) ® The surface gloss of the obtained heat-resistant light-shielding film was measured by a gloss meter in accordance with JIS Z 874 1. If the surface gloss is less than 3%, the gloss is good. (Coefficient of Friction) The static friction coefficient and the dynamic friction coefficient of the obtained heat-resistant light-shielding film were measured in accordance with JIS D 1 894. When the static friction coefficient and the dynamic friction coefficient are 〇. 3 It is judged to be good when it is below. (Surface roughness) ® The arithmetic mean height R a of the obtained heat-resistant light-shielding film was measured by a surface roughness meter (manufactured by Tokyo Seimi Co., Ltd., Surfcom 5 70A). The surface roughness must be 0·1 to 2·1 μη (arithmetic average height Ra). (Crystallinity of Light-Shielding Film) The crystallinity of the light-shielding film was evaluated by X-ray diffraction measurement. The X-ray diffraction device was measured by X'pertPR〇MPD (manufactured by PANalytical Co., Ltd.), and the measurement conditions were measured in a wide-angle range, using a CuKa line, a voltage of 45 kV, and a current; 40 mA. Crystallization of the film was evaluated based on the presence or absence of X-ray diffraction peaks. 31 - 200841038 Sex. Further, the film cross section was observed by TEM, and the crystallinity was evaluated based on the presence or absence of crystal particles. (Composition of light-shielding film) The composition of the light-shielding film (C/Me atomic ratio) was determined by quantitative analysis by XPS and ΕΡΜΑ (electron beam micro analyzer). Further, the oxygen content (O/Me atomic ratio) in the light-shielding film was quantitatively analyzed by XPS. The composition was analyzed by XPS, and the depth was measured by sputtering under a vacuum of 20 to 3 Onm. Must reach C/Me as 0. 3 or more, O/Me is 0. 5 or less. ® (Heat Resistance) The heat resistance of the heat-resistant light-shielding film obtained was evaluated according to the following procedure. The produced heat-resistant light-shielding film was allowed to stand in an oven (manufactured by Advantech) heated to a set heating temperature (130, 155, and 250 ° C) for 24 hours, and then taken out. It was evaluated as good (〇) when there was no bending and film discoloration, and was not sufficiently good (X) when there was bending or film discoloration. (Adhesiveness) The adhesion of the obtained heat-resistant light-shielding film was evaluated by a film after the heat resistance test in accordance with JIS C002 1. It was evaluated as good when no film was detached, and was evaluated as not good when there was film detachment. (Electrical conductivity) The electrical conductivity of the obtained heat-resistant light-shielding film was measured in accordance with ns K69 1 1 . (Example 1) A metal carbide film was formed on a resin film substrate having a heat resistance of 20 or more using a take-up sputtering apparatus as shown in Fig. 3. First -32-. 200841038 First, a target 1 1 as a film material is placed in the cathode of the apparatus provided with the magnetron cathode i 对 on the opposite side of the surface of the cooling tank drum 8. The film transporting portion constituted by the take-up roller 5, the cooling can roller 8, the take-up roller 9, and the like is separated from the magnetron cathode 10 by the separator 12. Then, a cylindrical resin film substrate 1 is placed on the take-up roll 5. The resin film substrate is processed by blasting surface to have an arithmetic average height Ra of 〇. A 5 μm i-thickness and a polyimide film having a thickness of 75 μm. The polyimide film is dried by heating to a temperature of 200 ° C ® or higher before sputtering. Then, the inside of the vacuum chamber 7 is evacuated by the vacuum pump 6 such as a turbo molecular pump, and then the cooling can roller 8 and the cathode are discharged, and the resin film substrate 1 is bonded to the surface of the cooling can roller to be transported while film formation is performed. . The degree of vacuum reached in the vacuum chamber before film formation is 2χ1 (Γ4 or less. First, the titanium carbide sintered body target (C/Ti atomic ratio is 0. 8) The cathode was placed in a cathode, and a film of a titanium carbide film was formed by the cathode by a DC sputtering method. The titanium carbide film is pure argon gas sputtering gas (purity 99. 999%) at 0. Film formation was carried out under a sputtering pressure of 6 Pa. The thickness of the titanium carbide film is controlled by controlling the conveying speed of the film and the electric power applied to the target at the time of film formation. The resin film substrate 1 conveyed from the take-up roll 5 passes through the surface of the cooling can drum 8, and is taken up by the take-up roll 9. • When the titanium carbide film is sputtered, the surface temperature of the film is measured by an infrared radiation thermometer measured by a quartz glass window of a take-up sputtering apparatus at a temperature of 200 to 210 〇C. On both sides of a polyimide film (PI) film having a thickness of 75 μm, a titanium carbide film having a film thickness of 200 nm was formed by sputtering to obtain a heat-resistant light-shielding film. The surface of the polyimide film (PI) film was subjected to sandblasting at a predetermined ejection time, ejection pressure, and transport speed, and an arithmetic mean height Ra of 0 was formed on both surfaces. 5 μηι fine concavities and convexities. By performing such film formation on each of both sides of the film, a light-shielding film of a symmetric structure centered on a polyimide film substrate can be produced. Then, the produced heat-resistant light-shielding film was evaluated by the above method. As a result, the composition of the obtained titanium carbide film was analyzed by XPS and ΕΡΜΑ quantitative ^, and the result was the same as the target composition (the C/Ti atomic ratio was 0. 8). In addition, the oxygen content in the membrane was quantitatively analyzed by XPS, and the atomic ratio of O/Me was 0. 3. The crystallinity of the film was measured by X-ray diffraction, and a spectrogram as shown in Fig. 6 was obtained, and a diffraction peak derived from the crystal structure of TiC was observed, and it was found that the film was excellent in crystallinity. Further, the cross section of the film was observed by TEM, and it was found to be a film composed of crystal grains. Further, the visible light region (wavelength of 380 to 780 nm) has an optical density of 4 or more and a maximum reflectance of 7%. Also, the surface gloss is less than 3%. The static friction coefficient and the dynamic friction coefficient are 0. 3 or less, good. In addition, the surface resistance sheet (sheet resistance) is 98 Ω / [Ι1 (read as ohms per square), and the surface arithmetic mean locality Ra is 0. 4μπι. The heat-resistant light-shielding film after heating did not undergo bending and discoloration. No film detachment occurred and it was good. The light-shielding property, the reflection property, the glossiness, the friction coefficient, and the change before heating did not change. The results of these evaluations are listed in Table 1. The obtained heat-resistant light-shielding film has good optical density, reflectance, surface gloss, heat resistance, friction coefficient, and electrical conductivity, and thus it can be seen that the heat-resistant -34-200841038 light-shielding film can be used as a liquid crystal projector used in a high-temperature environment. Parts such as aperture are used. (Example 2) A heat-resistant light-shielding film was produced under the same conditions as in Example 1 except that the film transport speed in the film formation process was changed and only the thickness of the titanium carbide film was changed to 1 〇 nm. The type of the target, the type, thickness, and surface roughness of the polyimide were the same as in Example 1. In addition, the vacuum degree reached in the vacuum chamber before film formation is 6x1 (T5Pa or less. The carbon content of the light-shielding film is the same as that of Example 1. The oxygen content in the film is quantitatively analyzed by XPS, and the atomic ratio of O/Me is 0. . 4. It was found from the X-ray diffraction measurement of the light-shielding film that the film was a TiC film excellent in crystallinity. Further, it was also observed that the cross section was observed by TEM to form a dense film composed of crystal grains. The evaluation (optical performance, heat resistance) of the obtained heat-resistant light-shielding film was carried out in the same manner and under the same conditions as in Example 1. When the titanium carbide film was sputtered in the same manner as in the first embodiment, the surface temperature of the film was measured by an infrared ray irradiance meter from a quartz glass window of a take-up sputtering apparatus at a temperature of 1 80 0 to 20,000. . . Performances such as optical density, reflectance 'glossiness, and the like in the visible light region were obtained at the same level as in Example 1. And 'confirm the surface resistance 値 is 1 90 Ω / □ ' The surface arithmetic mean height Ra is 0. 4Km. Further, in the evaluation of the adhesion of the film after the heating test at 25 ° C for 24 hours, "there was no bending and film detachment, and the heat-resistant light-shielding film having the same heat resistance as that of Example 1 was observed. The performance is listed in Table 1. It can be seen that the heat-resistant light-shielding film can be used as a diaphragm of a liquid crystal projector used in a high-temperature environment -35-200841038. (Example 3) Under the film formation conditions of Example 2, the degree of vacuum reached in the vacuum chamber before film formation was 8 x 1 (T4 Pa, film formation was performed five times on the film substrate, and 550 nm was formed on both sides of the film). A heat-resistant light-shielding film was produced under the same conditions as in Example 2 except for the titanium carbide film. The type of the target, the type, thickness, and surface roughness of the polyimide were the same as in Example 1. The evaluation of the light-shielding film (optical performance, heat resistance) was carried out in the same manner and under the same conditions as in Example 1. When the titanium carbide film was sputtered in the same manner as in Example 1, the surface temperature of the film was passed through an infrared radiation thermometer. The temperature of the light-shielding film was the same as that in Example 1. The carbon content of the light-shielding film was the same as in Example 1. The oxygen content of the film (O/Ti atom) was quantitatively analyzed by XP S. The ratio is 0. 8. There is a considerable increase in the ratio of the films of Examples 1 to 2. It was found from the X-ray diffraction measurement of the film that the film was a TiC film excellent in crystallinity. In addition, the cross section was observed by TEM, and it was also found that ® was composed of a dense film composed of crystal grains. The performances such as optical density, reflectance, and gloss in the visible light region were obtained at the same level as in Example 1. Further, it was confirmed that the surface resistance 値 was 80 Ω/Ο, and the surface arithmetic mean height Ra was 〇·3 μιη. Further, in the evaluation of the adhesion of the film after the heating test at 25 °C for 24 hours, there was no bending or film peeling, and it was found that the heat resistance was the same as that of Example 1. The composition and properties of the obtained heat-resistant light-shielding film are shown in Table 1. The film of Example 3 had more oxygen content than the films of Examples 1 to 2 because the degree of vacuum in the vacuum chamber during the film formation was -36-200841038. That is to say, it is considered that the residual oxygen in the vacuum chamber is taken up into the film by the sway. Such a film having a large oxygen content has a certain increase in light transmittance, and if the film thickness is less than 40 Onm, sufficient light shielding property cannot be obtained. However, by setting the film thickness as in Example 3 to 5 5 Onm, it is ensured that the optical density is 4 or more. In addition, in the same experiment, when the atomic ratio of Ο/Ti is 0. In the film of 9 sheets, when the film thickness was 45 Onm or 50,000 nm, it was confirmed that the light transmittance was 4 or more. ^ This heat-resistant light-shielding film can be used as a diaphragm of a liquid crystal projector used in a high-temperature environment. (Comparative Example 1) A heat-resistant light-shielding film was produced under the same conditions as in Example 1 except that the film transport speed was changed so that the thickness of the titanium carbide film became 90 nm. The type of the target, the type, thickness, and surface roughness of the polyimide were the same as in Example 1. The composition (carbon content, oxygen content) and crystallinity of the light-shielding film were also the same as those of the film of Example 1. The evaluation results are shown in Table 2. A heat-resistant light-shielding film having a 90 nm titanium carbide film formed on both surfaces of the film was evaluated in the same manner and under the same conditions as in Example 1 (optical performance, heat resistance). As a result, the optical density was 3, and it was found that there was no sufficient light blocking property. Therefore, if such a light-shielding film is used for a diaphragm member of a liquid crystal projector, since light leakage occurs, it does not have sufficient performance. (Example 4) In the same manner as in Example 1, except that a polyimine film having an arithmetic mean height Ra of 〇·2 μm made by changing the blasting surface processing conditions was used. 200841038 A heat-resistant light-shielding film was produced under the same conditions. The type of the target, the type and thickness of the polyimine were the same as in Example 1. When the titanium carbide film was sputtered in the same manner as in the first embodiment, the surface temperature of the film was measured by an infrared radiation thermometer by a quartz glass window of a take-up sputtering apparatus at a temperature of 2 0 0 to 2 10 ° C. The film temperature was the same as that of Example 1. The evaluation (optical performance, heat resistance) of the obtained heat-resistant light-shielding film was carried out in the same manner and under the same conditions as in Example 1. The composition (carbon content, oxygen content) and crystallinity of the light-shielding film were also the same as those of the film of Example 1. Performance 0 - is listed in Table 1. As a result, the properties such as optical density and gloss were obtained in the same level as in Example 1. Also, confirm that the surface resistance 値 is 105 Ω/□, and the surface arithmetic mean height Ra is Ο. Μμηη. The maximum reflectance in the visible light region is 1%. In the evaluation of the adhesion of the film after the heating test for 24 hours at 250 ° C, there was no bending or detachment of the film, and it was found that the heat resistance was the same as that of Example 1. The composition and properties of the obtained heat-resistant light-shielding film are shown in Table 1. Thus, the heat-resistant light-shielding film can be used as a diaphragm of a liquid crystal projector used in a high-temperature environment. (Example 5) A heat-resistant light-shielding film was produced under the same conditions as in Example 1 except that a polyimide film having an arithmetic mean height Ra of 0 · 8 μm was produced by changing the blasting surface processing conditions. The type of the target, the type and thickness of the polyimine were the same as in the first embodiment. When the titanium carbide film was sputtered in the same manner as in the first embodiment, the surface temperature of the film was measured by an infrared radiation thermometer, and the temperature was 200 to 21 0° from the stone-38-200841038 glass window of the take-up sputtering apparatus. C has the same film temperature as in Example 1. The evaluation (optical performance, heat resistance) of the obtained heat-resistant light-shielding film was carried out in the same manner and under the same conditions as in Example 1. It was confirmed that the light-shielding film was excellent in crystallinity as in Example 1, and the carbon content and oxygen content in the film were also substantially the same as in Example 1. The performance is listed in Table 1. As a result, performances such as optical density, reflectance, and gloss were obtained at the same level as in Example 1. Also, confirm that the surface resistance 値 is 90 Ω/□, and the arithmetic mean height Ra of the surface is 0. 7μιη. Further, in the evaluation of the adhesion of the film after the heating test at 250 ° C for 24 hours, there was no bending or film peeling, and it was found that the heat resistance was the same as that of Example 1. Thus, the heat-resistant light-shielding film can be used as a diaphragm of a liquid crystal projector used in a high-temperature environment. (Comparative Example 2) The arithmetic mean height Ra prepared by changing the processing conditions of the blast surface was 0. A heat-resistant light-shielding film was produced under the same conditions as in Example 1 except for a 1 μm polyimine film. The type of the target, the type and thickness of the polyimine were the same as in Example 1. When the titanium carbide film was sputtered in the same manner as in Example 1, the surface temperature of the film was measured by an infrared radiation thermometer by a quartz glass window of a take-up sputtering apparatus at a temperature of 2 0 0 to 2 10 °c. Evaluation (optical performance, heat resistance) of the heat-resistant light-shielding film in which the titanium carbide film was formed on both surfaces of the film was carried out in the same manner and under the same conditions as in Example 1. It was confirmed that the light-shielding film was excellent in crystallinity as in Example 1, and the carbon content in the film and the oxygen content of -39 - 200841038 were also the same as in Example 1. The performance is listed in Table 1. As a result, although the optical density was 4 or more 'the same as in the first embodiment', the reflectance was at most 33%, and the gloss was shown to be 70%, which was larger than the reflectance and glossiness of Example 2. Heat-resistant light-shielding film. Further, it was confirmed that the surface resistance 値 was 110 Ω/□, and the surface arithmetic mean height Ra was 0·05 μm. In the evaluation of the adhesion of the film after the heating test at 250 ° C for 24 hours, there was no bending and film detachment. Such a heat-resistant light-shielding film having a large reflectance and glossiness, if used for a shutter ® blade or the like, cannot be applied due to surface reflection. (Comparative Example 3) A heat-resistant light-shielding film was produced under the same conditions as in Example 2 except that the polyimide film having an arithmetic mean height Ra of 2·3 μm was produced by changing the surface processing conditions by sandblasting. The type of the target, the type and thickness of the polyimine were the same as in Example 2. When the titanium carbide film is sputtered in the same manner as in the first embodiment, the surface temperature of the film is measured by an infrared radiation thermometer, and is measured by a stone® glass window of a take-up sputtering apparatus at a temperature of 200 to 21 0 ° C. The film temperature was the same as in Example 1. The evaluation (optical performance, heat resistance) of the heat-resistant light-shielding film on which the titanium carbide film of 1 1 〇nm was formed on both surfaces of the film was carried out in the same manner and in the same manner as in Example 1. It was confirmed that the light-shielding film was excellent in crystallinity as in Example 2, and the carbon content and oxygen content in the film were also the same as in Example 2. The performance is listed in Table 2. As a result, although the maximum reflectance was 4% and the gloss was 3% or less, it was the same as in Example 2, but the optical density was as low as 2. 0, confirmed to be insufficient heat resistance -40- 200841038 shading film. In addition, it was confirmed that the surface resistance 値 was 86 Ω / □, and the surface arithmetic mean height Ra was 2. 2μηι. In the evaluation of the adhesion of the film after the heating test for 24 hours at 250 ° C, there was no bending or detachment of the film. The composition and properties of the obtained heat-resistant light-shielding film are shown in Table 2. It can be seen that such a heat-resistant light-shielding film having a low optical density can be used not only in the aperture member of a liquid crystal projector but also in the use of many optical systems because it can transmit a relatively large amount of light as compared with the embodiment. . (Examples 6 to 8) ® In addition to the use of targets having different carbon contents, the C/Ti atomic ratio of the titanium carbide film was changed to 〇. 3 (Example 6), 0. 5 (Example 7), 1. A heat-resistant light-shielding film was produced under the same conditions as in Example 1 except for 1 (Example 8). The type, thickness, surface roughness, and thickness of the titanium carbide film of the polyimide were the same as in Example 1. The composition and properties of the obtained heat-resistant light-shielding film are shown in Table 1. When sputtering of a titanium carbide film was carried out in the same manner as in Example 1, the surface temperature of the film was measured by an infrared radiation thermometer by a quartz glass window of a take-up sputtering apparatus at a temperature of 2 0 0 to 2 10 ° C. It has the film temperature equivalent to Example 1. The evaluation (optical performance, heat resistance) of the obtained heat-resistant light-shielding film was carried out in the same manner and under the same conditions as in Example 1. As a result, performances such as optical density, reflectance, and gloss were obtained at the same level as in Example 1. Further, it was confirmed that the surface resistance 値 was 90 to 1 15 Ω/□, and the arithmetic mean height Ra of the surface was 0·4 μιη. From the X-ray diffraction of the light-shielding film, it was found that if the amount of C/Ti increases, the diffraction peak tends to be weak, but any film exhibits good crystallinity. This -41 - 200841038 outside was confirmed by the same TEM observation that either film was a crystal film. Quantitative analysis of oxygen content in the membrane by XPS, 〇 / Ti atomic ratio is 〇. 2 ~ 〇 4. Further, in the evaluation of the adhesion of the film after the heating test at 250 ° C for 24 hours, there was no bending or film detachment, and it was found that the heat resistance was the same as in Example 1. Thus, the heat-resistant light-shielding film can be used as a diaphragm of a liquid crystal projector used in a high-temperature environment. (Comparative Example 4) A heat-resistant light-shielding film was produced under the same conditions as in Example 1 except that the target of carbon content was different, and the C/Ti atomic ratio of the titanium carbide film was changed to 0 · 15 . The type, thickness, surface roughness, and thickness of the titanium carbide film of the polyimide were the same as in Example 1. The composition and properties of the obtained heat-resistant light-shielding film are shown in Table 1. When the titanium carbide film was sputtered in the same manner as in the first embodiment, the surface temperature of the film was measured by an infrared radiation thermometer by a quartz glass window of a take-up sputtering apparatus at a temperature of 200 to 21 ° C. Example 1 with the film temperature of the 帛. The evaluation (optical performance, heat resistance) of the obtained heat-resistant light-shielding film was carried out in the same manner and under the same conditions as in Example 1. As a result, performances such as optical density, reflectance, and gloss were obtained at the same level as in Example 1. In addition, the surface resistance 値 is determined to be 86 Ω/□, and the arithmetic mean height Ra of the surface is 0. 4μπι. The crystallinity of the film was good, and the ratio of Ο/Ti atoms in the film was 〇·4. Further, the film after the heat test at 24 ° C for 24 hours was evaluated, and although there was no bending, the film detachment occurred. The color tone changed significantly with the reflectance of -42 - 200841038. The cross section of the film was observed by TEM, and the film on the surface of the light-shielding film and the side of the polyimide was oxidized. According to this, it is considered that this is a cause of a decrease in film adhesion and a change in color tone. Thus, it can be seen that such a heat-resistant light-shielding film cannot be used as a diaphragm of a liquid crystal projector used in a high-temperature environment. (Comparative Example 5) A heat-resistant light-shielding thin film was produced under the same conditions as in Example 1 except that a Ti target was used as a light-shielding film. The type, thickness, surface roughness, and thickness of the light-shielding film of the polyimide were the same as in Example 1. The composition and performance of the obtained heat-resistant light-shielding film are shown in Table 2. When the titanium film is sputtered in the same manner as in the first embodiment, the surface temperature of the film is measured by an infrared radiation thermometer, and is measured by a quartz glass window of a take-up sputtering apparatus at a temperature of 2 0 0 to 2 1 0 ° C. The film temperature was the same as in Example 1. The evaluation (optical performance, heat resistance) of the obtained heat-resistant light-shielding film was carried out in the same manner and under the same conditions as in Example 1. As a result, performances such as optical density, reflectance, and gloss were obtained at the same level as in Example 1. Further, it was confirmed that the surface resistance 値 was 86 Ω/□, and the surface arithmetic mean height Ra was 0·4 μm. However, the film after the heating test at 250 ° C for 24 hours was evaluated, and although there was no bending, the film was detached, and the change in color tone was remarkable as the reflectance was changed. The cross section of the film was observed by TEM, and the film on the surface of the film and the side of the polyimide was oxidized. It is considered that this is caused by a decrease in film adhesion and a change in color tone. • 43- ‘200841038 It can be seen that this heat-resistant light-shielding film cannot be used as a diaphragm of a liquid crystal projector used in a high-temperature environment. (Example 9) A titanium carbide film was formed on the resin film base material side in the same manner as in Example 1 by using a take-up type sputtering apparatus as shown in Fig. 4. The resin film substrate was a polyimide film having a thickness of 200 μm. The film formation surface of the film was sandblasted in advance, and had a surface having the same roughness as in Example 1. The evaluation (optical performance, heat resistance) of the obtained heat-resistant light-shielding film was carried out in the same manner and under the same conditions as in Example 1. When sputtering of a titanium carbide film was carried out in the same manner as in Example 1, the surface temperature of the film was measured by a quartz glass window of a take-up sputtering apparatus by an infrared radiation thermometer, and the temperature was 270 to 3 10 ° C, and was carried out. In comparison with Example 1, the natural heating effect of the film surface from the plasma is more remarkable. The optical density, reflectance, glossiness and the like in the visible light region on the side of the film formation surface were obtained at the same level as in Example 1. In addition, it is confirmed that the surface resistance 値 is ^ 95 Ω / □, and the arithmetic mean height Ra of the surface is 〇. 4μπι. The crystallinity of the film was good, and the carbon content and oxygen content in the film were the same as in Example 1. Further, in the evaluation of the adhesion of the film after the heating test at 250 ° C for 24 hours, there was no bending and film detachment, and it was found that the heat resistance was the same as that of the Example. The composition and properties of the obtained heat-resistant light-shielding film are shown in Table 1. Thus, the heat-resistant light-shielding film can be used as a diaphragm of a liquid crystal projector used in a high-temperature environment. -44-200841038 (Examples 10 to 12, Comparative Examples 6 to 7) In the same manner as in Examples 6 to 8 and Comparative Examples 4 to 5, a tungsten carbide film having a different carbon content was used as a light-shielding film to produce a heat-resistant light-shielding film. The resin film substrate is a polyimide film having a thickness of 50 μm, and an arithmetic mean height Ra of 0 is formed on both sides. 5 μπι fine concavities. Under the same conditions as in Examples 6 to 8 and Comparative Examples 4 to 5, a tungsten carbide target or a tungsten target having a different carbon content was used, and a tungsten carbide film or tungsten having a carbon content of about 150 nm was formed on the surface of the film. membrane. When the tungsten carbide film or the tungsten film was sputtered in the same manner as in the first embodiment, the surface temperature of the film was measured by an infrared radiation thermometer by a quartz glass window of a take-up sputtering apparatus at a temperature of 190 to 20 3 ° C. . The composition and properties of the obtained heat-resistant light-shielding film are shown in Table 1 and Table 2. The oxygen content in the membrane was analyzed by XPS, and the atomic ratio of O/Me was 〇. 〇5~0. 1. The light-shielding film was found by X-ray diffraction, and there was a tendency that the diffraction peak was weakened if the amount of C/W was increased, but any film showed good crystallinity. Further, it was confirmed by the same TEM observation that any of the films was a crystal film. The optical density, reflectance, gloss and the like in the visible light region were obtained at the same level as in Example 1. In addition, the surface resistance 値 is shown to be 8 3 to 123 Ω / □ conductivity, the surface arithmetic mean height Ra is 0. 4μηι. The film after the heating test at 25 0 t: 24 hours was evaluated, and the C/W atomic ratio of the film was 0. 3 (Example 10), 0. 6 (Example 11), 0. In the case of Example 9 (Example 12), no film separation was observed in the color tone change and adhesion test, but the C/W atomic ratio of the film was 0. In the case of 1 (Comparative Example 6) and 0 (Comparative Example 7), detachment of the film occurred in the adhesion test, and the change in color tone was remarkable as the reflectance was changed. -45- •200841038 The film cross-sections of Comparative Example 6 and Comparative Example 7 were observed by TEM, and the film surface and the film portion on the side in contact with the polyimide were oxidized, and no oxidation was observed in Examples 1 to 12. From this, it is considered that the decrease in film adhesion and the change in color tone in Comparative Example 6 and Comparative Example 7 are due to oxidation of the film. Thus, the heat-resistant light-shielding film of Example 1 〇~1 2 can be used as a diaphragm of a liquid crystal projector used in a high-temperature environment, and Comparative Examples 6 and 7 cannot be used in a local temperature environment. (Examples 13 to 15 and Comparative Examples 8 to 9) In the same manner as in Examples 6 to 8 and Comparative Examples 4 to 5, a heat-resistant light-shielding film was experimentally produced using a tantalum carbide film having a different carbon content as a light-shielding film. The resin film substrate is a polyimide film having a thickness of 125 μm, and an arithmetic mean height Ra of 0 is formed on both sides. 4 μιη fine concavities. Under the same conditions as in Examples 6 to 8 and Comparative Examples 4 to 5, a tantalum carbide target or tantalum target having a different carbon content was used, and a tantalum carbide film or tantalum having a carbon content of about 27 Onm was formed on both surfaces of the film. membrane. When the ruthenium carbide film or the ruthenium film was sputtered in the same manner as in Example 1, the surface temperature of the film was measured by an infrared ray radiation thermometer by a quartz glass window of a take-up sputtering apparatus at a temperature of 205 to 21 °C. The composition and properties of the obtained heat-resistant light-shielding film are shown in Table 1 and Table 2. The oxygen content in the membrane was analyzed by XPS, and the Ο/Si atomic ratio was 0. 1~0. 2. The light-shielding film was found by X-ray diffraction, and there was a tendency that the diffraction peak was weakened if the amount of C/Si was increased, but any film showed good crystallinity. Further, it was confirmed by the same TEM observation that any of the films was a crystal film. The performances such as optical density, reflectance, and gloss in the visible light region were obtained at the same level as in Example 1. In addition, it is shown that the surface resistance 値 is 1 〇 5 to -46- 200841038 15 6 Ω / □ conductivity, the surface arithmetic mean height Ra is 0. 3μπι. The film after heating test at 25 ° C for 24 hours was evaluated, and the C/Si atomic ratio of the film was 〇. 35 (Example 13), 0. 5 (Example 14) and 0. 95 (Example 15), no film separation was observed in the color tone change and adhesion test, but the film had a C/Si atomic ratio of 0. In 2 (comparative example 8) and 0 (comparative example 9), detachment of the film occurred in the adhesion test, and the change in color tone was remarkable as the reflectance was changed. The film cross-section of Comparative Examples 8 and 9 was observed by TEΜ, and the film on the surface of the film and the polyimide side was oxidized, and no oxidation was observed in the film of Example 13 to 15®. From this, it is considered that the decrease in film adhesion and the change in color tone in Comparative Example 8 and Comparative Example 9 are due to oxidation of the film. Thus, the heat-resistant light-shielding films of Examples 13 to 15 can be used as components such as the aperture of a liquid crystal projector used in a high-temperature environment, and Comparative Examples 8 and 9 cannot be used in a high-temperature environment. (Examples 16 to 18, Comparative Examples 1 to 1 1) In the same manner as in Examples 6 to 8 and Comparative Examples 4 to 5, a heat-resistant light-shielding film was experimentally produced using a carbonized aluminum film having a different carbon content as a light-shielding film. The resin film substrate ^ is a polyimide film having a thickness of 20 μm, and an arithmetic mean height Ra of 0 is formed on both sides. Fine bump of 6 μm. Under the same conditions as in Examples 6 to 8 and Comparative Examples 4 to 5, an aluminum carbide target or an aluminum target having a different carbon content was used, and an aluminum carbide film or aluminum having a carbon content of about 230 nm was formed on both surfaces of the film. membrane. When sputtering of an aluminum carbide film or an aluminum film was carried out in the same manner as in Example 1, the surface temperature of the film was measured by an infrared radiation thermometer by a quartz glass window of a take-up sputtering apparatus at a temperature of 2 0 0 to 2 1 0. °C. The composition and properties of the obtained heat-resistant light-shielding film are shown in Table 1, Table -47-200841038 2 . The oxygen content in the membrane was analyzed by XPS, and the Ο/Al atomic ratio was 0. 1 ~ 〇. 2. The light-shielding film was found by X-ray diffraction, and there was a tendency that the diffraction peak was weakened if the amount of C/A1 was increased, but any film showed good crystallinity. Further, it was confirmed by the same TEM observation that any of the films was a crystal film. The performances such as optical density, reflectance, and gloss in the visible light region were obtained at the same level as in Example 1. In addition, the surface resistance 値 is shown to be 8 2 to 125 Ω / □ conductivity, the surface arithmetic mean height Ra is 〇. 5μηι. The film after heating test at 25 ° C for 24 hours was evaluated, and the atomic ratio of C / A1 of the film was 0. 3 (Example 16), 〇. 7 (Example 17), 1. When 0 (Example 18), no film separation was observed in the color tone change and adhesion test, but the C/A1 atomic ratio of the film was 0. In the case of 1 (Comparative Example 10) and 〇 (Comparative Example 1 1), detachment of the film occurred in the adhesion test, and the change in color tone was remarkable as the reflectance was changed. With respect to Comparative Example 1, the cross-section of the film of 〇 and 11 was observed by TEM, and the film on the surface of the film and on the side of the polyimide was oxidized, and no oxidation was observed in the films of Examples 16 to 18. From this, it is considered that the decrease in film adhesion and the change in color tone in Comparative Example 1 and Comparative Example 1 1 are due to oxidation of the film. From this, it can be seen that the heat-resistant light-shielding film of Examples 16 to 18 can be used as a diaphragm of a liquid crystal projector used in a high-temperature environment, and the comparative examples 10 and 11 cannot be used in a high temperature environment. (Example 19) The film composition, film thickness, and composition were titanium carbide films (film thickness: 200 nm, C/Ti atomic ratio: 0. 8) / Tantalum carbide film (film thickness 20nm, C / Si atomic ratio: 0. 5) A two-layered light-shielding film is used to manufacture a heat-resistant light-shielding film. Using a take-up sputtering apparatus of Fig. 3, a titanium carbide film and a tantalum carbide film were sequentially formed on both sides of the polyimide film of the same type, thickness, and roughness of -48 to 200841038 degrees as in Example 1. In the stomach and stomach example 1, the film surface temperature at the time of film formation was measured in the same manner, and the type, thickness, and surface roughness of the polyimide of i 90 to 2 10 ° C ° were the same as in Example 1. The evaluation (optical performance, heat resistance) of the obtained heat-resistant light-shielding film was carried out in the same manner and under the same conditions as in Example 1. The composition and characteristics of the obtained heat-resistant light-shielding film are shown in Table 1. It is confirmed that the crystallinity of the laminated light-shielding film is good. In addition, the 0/Si atomic ratio in the SiC film layer of each layer was analyzed by XPS while sputtering the film surface was o. ^The ratio of 〇/Ti atoms in the Ti/C film layer is 0. 2. The surface resistance and surface roughness, the optical density in the visible light region, and the gloss performance were the same as in Example 1. The maximum reflectance in the visible light region was 4%, and the reflectance was remarkably lowered as compared with Example 1 in which only the titanium carbide film was not formed on the surface of the tantalum carbide film. This is because, by stacking a titanium carbide film and a tantalum carbide film having different optical constants, it is found that light interference has an effect of preventing reflection and thus making it low in reflection. Further, in the evaluation of the adhesion of the film after the heating test at 25 °C for 24 hours, there was no bending and film detachment, and it was found that the heat resistance was the same as that of Example 1. As a result, the heat-resistant light-shielding film can be used as a diaphragm of a liquid crystal projector used in a high-temperature environment, and is particularly useful for use in parts requiring low reflectivity in the vicinity of a projector lens. (Example 20) -49-200841038 The light-shielding film was subjected to the same experiment as in the examples 1 to 9 and the comparative examples 1 to 4 by using lanthanum carbide, molybdenum carbide, vanadium carbide, carbon chromium or carbonization, and had the same tendency. . When C/Nb C/Mo atomic ratio, C/V atomic ratio, C/Ta atomic number ί subtotal ratio, C/Hf atomic ratio is 0. When it is 3 or more, a light-shielding film excellent in visibility is confirmed. Either one of them has good crystallinity and the O/Me atomic ratio is 0. When it is 5 or less, the film thickness is sufficient to show sufficient light blocking properties. (Example 21) A film was produced under the same conditions as in Example 1 except that the heat-resistant resin film was changed to a polyethylene carbonate (PEN) sheet having a thickness of 25 μm, and the film surface temperature at the time of film formation was changed. The type of the target, the surface roughness of the film, and the evaluation of the heat-resistant light-shielding film obtained in Example 1 (optical performance, the same method and conditions as in Example 1). When sputtering with the titanium carbide film of the example, the film was The surface temperature was measured by a red spirometer, measured by a quartz glass window of a take-up sputtering apparatus, and it was 158. The optical density, reflectance, glossiness, and the like in the visible light region were the same level as in Example 1. Further, the surface resistance was confirmed. The surface arithmetic mean height Ra is 0. 4 μηι. The light-shielding film is made of a film which is also excellent in crystallinity. The amount of carbon and oxygen in the light-shielding film are the same.

另外，對於耐熱實驗，同樣地對在1 5 5 °C 化鉅、碳化碳化鈦的情原子數比、 t 、 C/Zr 原以實現耐熱膜，當膜中 4 0 0 nm以下聚萘二甲酸 1 55 ~ 1 5 8〇C 耐熱遮光薄相同。讨熱性）以與 1同樣地進外線輻射溫 •溫度爲1 5 5 性能獲得與爲 90Ω/Ο，的方法確認與實.施例1 下進行了 24 -50- 200841038 小時加熱試驗的膜進行密合性評價，其結果沒有彎曲和膜的脫離，可見具有與實施例1同等的耐熱性能。製得的耐熱遮光薄膜的構成、性能一並列於表1。由此可見，這種耐熱遮光薄膜可以作爲在100〜155。〇下使用的車載用監視器的鏡頭單元中的固定光圈等部件使用。 (實施例22、23) 除了使耐熱樹脂薄膜改爲厚度爲6μπι(實施例22)、 β 1 2μπι(實施例23)的聚萘二甲酸乙二醇酯（PEN)片以外，在與實施例2 1完全相同的條件下製作耐熱遮光薄膜。靶的種類、薄膜的表面粗糙度、成膜條件與實施例1相同。膜的組成和厚度也與實施例2 1相同。在與實施例1同樣地進行碳化鈦膜的濺射時，薄膜的表面溫度通過紅外線輻射溫度計，由捲取式濺射裝置的石英玻璃視窗測定，溫度爲1 5 5 °C。膜中含碳量、含氧量通過同樣的方法進行分析，結果與實施例1基本相同。並且 • 51認膜的結晶性良好。製得的耐熱遮光薄膜的評價（光學性能、耐熱性）以與實施例1同樣的方法、條件進行。可見光區域的光密度、反射率、光澤度、表面電阻値、表面粗糙度等性能獲得與實施例2 1同等的水準。與實施例21同樣地進行耐熱實驗，結果沒有彎曲和膜的脫離，可見具有與實施例2 1同等的耐熱性能。製得的耐熱遮光薄膜的構成、性能一並列於表1。 -51 - 200841038 由此可見，這種耐熱遮光薄膜可以作爲在100〜155 °C 下使用的車載用監視器的鏡頭單元中的固定光圈等部件使用。 (比較例1 2) 除了採用 Ti靶，以不含碳元素的鈦膜作爲遮光膜以外，在與實施例2 1完全相同的條件下製作耐熱遮光薄膜。薄膜的種類、厚度、表面粗糙度、遮光膜的厚度與實施例 2 1相同。 ^ 製得的耐熱遮光薄膜的構成、性能列於表2。在與實施例2 1同樣地進行遮光膜的濺射時’薄膜的表面溫度通過紅外線輻射溫度計’由捲取式濺射裝置的石英玻璃視窗測定，溫度爲1 5 5〜1 5 8 °C。，具有與實施例2 1同等的薄膜溫度。製得的耐熱遮光薄膜的評#價（光學性能、耐熱性）以與實施例2 1同樣的方法、條件進行。其結果是：光密度、反射率、光澤度、表面電阻値、表面算術平均高度Ra等性能 ® 獲得與實施例2 1同等的水準。遮光膜的結晶性良好。但是，對在與實施例2 1相同耐熱實驗條件下於1 5 5 °C 進行2 4小時加熱試驗後的膜進行評價’結果雖然沒有彎曲，但發生了膜的脫離，且隨著反射率的變化色調變化也顯著。將膜的截面透過TEM觀察，膜的表面和薄膜一側的膜被氧化。據此認爲這是膜密合性降低和色調變化而產生的。由此可見，這種耐熱遮光薄膜不能作爲在1 5 5 °C下也 -52- ,200841038 使用的車載用監視器的鏡頭單元中的固定光圈等部件使用。 (比較例1 3〜1 6) 除了遮光膜採用A1 (比較例1 3 )、C r (比較例1 4)、N i (比較例15)、Nb(比較例16)以外，以與比較例12同樣的方法、條件進行。其結果是，光密度、反射率、光澤度、表面電阻値、表面算術平均高度Ra等性能獲得與實施例2 1同等的水準。In addition, for the heat resistance experiment, the atomic ratio of tungsten, carbonized titanium carbide, t, C/Zr was firstly developed at 1 5 5 °C to achieve a heat-resistant film, and the polynaphthalene dicarboxylic acid below 400 nm in the film. 1 55 ~ 1 5 8〇C The heat-resistant shade is the same. The heat-receiving property is the same as that of the first-line radiation temperature. The temperature is 155. The performance is obtained with a method of 90 Ω/Ο, and the film is subjected to the 24-50-200841038 hour heating test. As a result of the evaluation, there was no bending or detachment of the film, and it was found that the heat resistance was the same as that of Example 1. The composition and properties of the obtained heat-resistant light-shielding film are shown in Table 1. It can be seen that this heat-resistant light-shielding film can be used at 100 to 155. Use a fixed aperture such as a lens unit in the lens unit of the vehicle monitor used. (Examples 22 and 23) In addition to the heat-resistant resin film, a polyethylene naphthalate (PEN) sheet having a thickness of 6 μm (Example 22) and β 1 2 μm (Example 23) was used. 2 1 A heat-resistant light-shielding film was produced under the same conditions. The type of the target, the surface roughness of the film, and the film forming conditions were the same as in Example 1. The composition and thickness of the film were also the same as in Example 21. When sputtering of the titanium carbide film was carried out in the same manner as in Example 1, the surface temperature of the film was measured by an infrared radiation thermometer by a quartz glass window of a take-up type sputtering apparatus at a temperature of 155 °C. The carbon content and the oxygen content in the film were analyzed by the same method, and the results were basically the same as in Example 1. And • 51 crystals have good crystallinity. The evaluation (optical performance, heat resistance) of the obtained heat-resistant light-shielding film was carried out in the same manner and under the same conditions as in Example 1. The properties such as optical density, reflectance, gloss, surface resistance 値, and surface roughness in the visible light region were obtained at the same level as in Example 21. The heat resistance test was carried out in the same manner as in Example 21, and as a result, no bending and film detachment were observed, and it was found that the heat resistance was equivalent to that of Example 21. The composition and properties of the obtained heat-resistant light-shielding film are shown in Table 1. -51 - 200841038 It can be seen that this heat-resistant light-shielding film can be used as a fixed aperture in a lens unit of a vehicle-mounted monitor used at 100 to 155 °C. (Comparative Example 1 2) A heat-resistant light-shielding film was produced under the same conditions as in Example 21 except that a Ti target was used and a titanium film containing no carbon element was used as the light-shielding film. The type, thickness, surface roughness, and thickness of the light-shielding film of the film were the same as in Example 21. ^ The composition and properties of the obtained heat-resistant light-shielding film are shown in Table 2. When the light-shielding film was sputtered in the same manner as in Example 21, the surface temperature of the film was measured by a quartz glass window of a take-up type sputtering apparatus by an infrared radiation thermometer, and the temperature was 155 to 185 °C. It has the same film temperature as in Example 21. The evaluation of the heat-resistant light-shielding film (optical performance, heat resistance) was carried out in the same manner and under the same conditions as in Example 21. As a result, properties such as optical density, reflectance, gloss, surface resistance 値, surface arithmetic mean height Ra, and the like were obtained at the same level as in Example 21. The crystallinity of the light shielding film is good. However, the film was evaluated after the heat test at 150 ° C for 24 hours under the same heat-resistant test conditions as in Example 2, and although the film was not bent, the film was detached, and the reflectance was observed. The change in color tone is also significant. The cross section of the film was observed by TEM, and the film on the surface of the film and the film on the side of the film were oxidized. It is considered that this is caused by a decrease in film adhesion and a change in color tone. From this, it can be seen that such a heat-resistant light-shielding film cannot be used as a fixed aperture or the like in a lens unit of an on-vehicle monitor used at -55-, 200841038. (Comparative Example 1 3 to 1 6) In addition to the light-shielding film, A1 (Comparative Example 13), Cr (Comparative Example 14), Ni (Comparative Example 15), and Nb (Comparative Example 16) were used. 12 The same method and conditions are carried out. As a result, properties such as optical density, reflectance, gloss, surface resistance 値, and surface arithmetic mean height Ra were obtained in the same level as in Example 21.

^ 但是，對在與實施例2 1相同耐熱實驗條件下於i 5 5 °C 進行24小時加熱試驗後的膜進行評價，結果雖然沒有彎曲，但發生了膜的脫離，且隨著反射率的變化色調變化也顯著。將膜的截面透過TEM觀察，膜的表面和薄膜一側的膜被氧化。據此認爲這是膜密合性降低和色調變化的起因。由此可見，這種耐熱遮光薄膜不能作爲在155°C下也使用的車載用監視器的鏡頭單元中的固定光圈等部件使用。 ® (實施例24) 除了使用由改變噴砂表面加工條件製得的算術平均高度Ra爲2.2 μιη的聚醯亞胺（PI)薄膜以外，在與實施例1完全相同的條件下製作耐熱遮光薄膜。靶的種類、聚醯亞胺的種類、厚度與實施例1相同。在與實施例1同樣地進行碳化鈦膜的濺射時，薄膜的表面溫度通過紅外線輻射溫度計，由捲取式濺射裝置的石英玻璃視窗測定，溫度爲2 0 0〜2 1 0 °C，具有與實施例1同 -53- 200841038 等的薄膜溫度。製得的耐熱遮光薄膜的評價（光學性能、耐熱性）以與實施例1同樣的方法、條件進行。性能一並列於表1 〇其結果是，光密度、光澤度等性能獲得與實施例1同等的水準。並且，確認表面電阻値爲120Ω/□，表面算術平均高度Ra爲2.Ιμηι。可見光區域最大反射率爲3%。遮光膜的結晶性、含碳量、含氧量與實施例1同等水準。在25 0°C下24小時的加熱試驗後的膜的密合性評價 — 中，沒有彎曲和膜的脫離，可見具有與實施例1同等的耐熱性能。製得的耐熱遮光薄膜的構成、性能一並列於表1。可見光區域正反射率最大爲3%，顯示低反射性。由此可見，這種耐熱遮光薄膜可以作爲在高溫環境下使用的液晶投影機的光圈等部件使用。 (實施例25) 除了使用由改變噴砂表面加工條件製得的算術平均高度Ra爲1 ·6μηι的聚醯亞胺（PI)薄膜以外，在與實施例1完全相同的條件下製作耐熱遮光薄膜。靶的種類、聚醯亞胺的種類、厚度與實施例1相同。在與實施例1同樣地進行碳化鈦膜的濺射時，薄膜的表面溫度通過紅外線輻射溫度計，由捲取式濺射裝置的石英玻璃視窗測定，溫度爲2 0 0〜2 1 0 °C，具有與實施例1同等的薄膜溫度。製得的耐熱遮光薄膜的評價（光學性能、耐熱性）以與實施例1同樣的方法、條件進行。性能一並列於表1 0 -54-^ However, the film after the heating test at i 5 5 ° C for 24 hours under the same heat-resistant test conditions as in Example 21 was evaluated, and as a result, although there was no bending, the film was detached, and with the reflectance The change in color tone is also significant. The cross section of the film was observed by TEM, and the film on the surface of the film and the film on the side of the film were oxidized. Accordingly, this is considered to be a cause of a decrease in film adhesion and a change in color tone. From this, it can be seen that such a heat-resistant light-shielding film cannot be used as a fixed aperture or the like in a lens unit of a vehicle-mounted monitor which is also used at 155 °C. ® (Example 24) A heat-resistant light-shielding film was produced under the same conditions as in Example 1 except that a polyimine (PI) film having an arithmetic mean height Ra of 2.2 μm obtained by changing the processing conditions of the blast surface was used. The type of the target, the type and thickness of the polyimine were the same as in Example 1. When the titanium carbide film was sputtered in the same manner as in the first embodiment, the surface temperature of the film was measured by an infrared radiation thermometer by a quartz glass window of a take-up sputtering apparatus at a temperature of 2 0 0 to 2 10 ° C. The film temperature was the same as that of Example 1 -53-200841038. The evaluation (optical performance, heat resistance) of the obtained heat-resistant light-shielding film was carried out in the same manner and under the same conditions as in Example 1. The performance is shown in Table 1 〇 As a result, the optical density, gloss, and the like were obtained in the same level as in Example 1. Further, it was confirmed that the surface resistance 値 was 120 Ω/□, and the surface arithmetic mean height Ra was 2. Ιμηι. The maximum reflectance in the visible light region is 3%. The crystallinity, carbon content, and oxygen content of the light-shielding film were at the same level as in Example 1. In the evaluation of the adhesion of the film after the heating test at 25 °C for 24 hours, there was no bending and film detachment, and it was found that the film had the same heat resistance as that of Example 1. The composition and properties of the obtained heat-resistant light-shielding film are shown in Table 1. The positive reflectance in the visible light region is at most 3%, indicating low reflectivity. Thus, the heat-resistant light-shielding film can be used as a diaphragm of a liquid crystal projector used in a high-temperature environment. (Example 25) A heat-resistant light-shielding film was produced under the same conditions as in Example 1 except that a polyimine (PI) film having an arithmetic mean height Ra of 1 · 6 μm was obtained by changing the processing conditions of the blast surface. The type of the target, the type and thickness of the polyimine were the same as in Example 1. When the titanium carbide film was sputtered in the same manner as in the first embodiment, the surface temperature of the film was measured by an infrared radiation thermometer by a quartz glass window of a take-up sputtering apparatus at a temperature of 2 0 0 to 2 10 ° C. The film temperature was the same as that of Example 1. The evaluation (optical performance, heat resistance) of the obtained heat-resistant light-shielding film was carried out in the same manner and under the same conditions as in Example 1. Performance is listed in Table 1 0 -54-

200841038 其結果是，光密度、光澤度等性能獲得與實等的水準。並且，確認表面電阻値爲1 1 〇 Ω /□，平均高度Ra爲1·5μιη。可見光區域最大反射率I 光膜的結晶性、含碳量、含氧量與實施例1同等在25 0°C下24小時的加熱試驗後的膜的密中，沒有彎曲和膜的脫離，可見具有與實施例1 熱性能。製得的耐熱遮光薄膜的構成、性能一並3 可見光區域正反射率最大爲4%，顯示低反射性。由此可見，這種耐熱遮光薄膜可以作爲在高使用的液晶投影機的光圈等部件使用。 (實施例26) 對實施例 1〜2 5中製作的耐熱遮光薄膜進工，製作20mmx30mm的遮光葉片，每片遮光葉爲0.01〜0.03g。將兩片遮光葉片裝載在光圈裝懼耐久試驗。在耐久試驗中，在燈光照射的同時，在遮光動範圍的最大和最小開口徑範圍內重複活動遮光次，評價此時遮光葉片的耐熱性和耐磨損性。沒有出現由試驗磨損導致的遮光葉片外觀上光圈裝置內沒有發現由磨損產生的異物附著。医實現摩擦、磨損和噪音小，以及樹脂薄膜作爲基化，驅動遮光葉片的電機驅動扭矩減小，滑動性 (比較例1 7 ) 除了將遮光葉片替換爲金屬製的SUS箔板ϋ 施例1同表面算術 | 4%。遮水準。合性評價同等的耐 U於表1。溫環境下行沖孔加片的重量中，進行葉片的運葉片幾萬的變化，此，可以材而輕量良好。外，與實 -55- 200841038 施例26同樣地將SUS箔板進行沖孔加工，以基材製作20mmx30mm的遮光葉片，進行與實方ί 的評價。遮光葉片的重量爲0.2〜〇.5g。沒有出現由試驗磨損導致的遮光葉片外觀光圈裝置內沒有發現由磨損產生的異物附著。光葉片的重量大，使驅動遮光葉片的電機驅動滑動性變差。 (實施例27)200841038 As a result, performance such as optical density and gloss is achieved at a realistic level. Further, it was confirmed that the surface resistance 値 was 1 1 〇 Ω /□, and the average height Ra was 1·5 μιη. Maximum reflectance in the visible light region I The crystallinity, carbon content, and oxygen content of the optical film were the same as in Example 1, and the film density after the heating test at 25 ° C for 24 hours was not observed, and there was no bending or film detachment. It has thermal properties as in Example 1. The composition and performance of the obtained heat-resistant light-shielding film are 3, and the positive reflectance in the visible light region is at most 4%, showing low reflectivity. Thus, such a heat-resistant light-shielding film can be used as a component such as an aperture of a liquid crystal projector that is used at a high level. (Example 26) The heat-resistant light-shielding films produced in Examples 1 to 25 were produced to produce light-shielding blades of 20 mm x 30 mm, each of which was 0.01 to 0.03 g. Load two shades of light on the aperture and endurance test. In the endurance test, the light-shielding was repeated while the light-shielding period was repeated within the range of the maximum and minimum opening diameters of the light-shielding range, and the heat resistance and wear resistance of the light-shielding blade at this time were evaluated. There was no appearance of the shading blade caused by the test wear. No foreign matter adhesion due to abrasion was observed in the aperture device. The doctor realized friction, wear and noise, and the resin film as a base, and the motor drive torque for driving the light-shielding blade was reduced, and the slidability (Comparative Example 17) except that the light-shielding blade was replaced with a metal SUS foil plate. Same surface arithmetic | 4%. Coverage. Synthetic evaluation The equivalent resistance is shown in Table 1. In the weight of the punching and punching in the warm environment, the blade is tens of thousands of blades, which is light and good. In the same manner as in Example 26, the SUS foil sheet was punched, and a light-shielding blade of 20 mm x 30 mm was formed on the substrate to evaluate the actual thickness. The weight of the shading blades is 0.2 to 〇5 g. No appearance of the shading blade caused by the test wear No foreign matter adhesion due to abrasion was observed in the aperture device. The weight of the light blade is large, so that the motor driving slidability for driving the light shielding blade is deteriorated. (Example 27)

^ 除了成膜時薄膜表面溫度改爲50〜100 °C 同的製造條件製造實施例1構造的耐熱遮光薄膜表面溫度可以通過將冷卻罐的溫度設爲-20 圍內而調節。遮光膜爲晶體膜，膜中含碳量和施例1相同。所得的耐熱遮光薄膜在2 5 0 °C下進行24小後，對膜進行評價，沒有出現彎曲和反射率變調變化，但膜發生了脫離。在155°C下進行24 實驗後也具有相同的結果。但是，在1 3 0 °C下進行24小時的耐熱性實現任何彎曲和膜的變色，也沒有發生膜脫離。加工後的樣品也進行在1 3 0°C下24小時的加熱工端部沒有發生膜脫離。由此可見，這種耐熱以作爲在常溫或1301以下較低溫度下使用的等的固定光圈等光學部件使用。 (實施例2 8 ) SUS箔板爲 g例2 6同樣上的變化，但是由於遮扭矩增大，以外，以相膜。這種薄〜2 0 °C的範含氧量與實時加熱實驗化導致的色小時的加熱驗，沒有發對衝壓沖孔實驗，在加遮光薄膜可數位照相機 -56- ♦200841038 除了成膜時薄膜表面溫度改爲5 0〜1 0 0 °C以外，以相同的製造條件製造實施例2 1〜2 3構造的耐熱遮光薄膜。這種薄膜表面溫度可以通過將冷卻罐的溫度設爲-20〜20 °C 的範圍內而調節。遮光膜爲晶體膜，膜中含碳量和含氧量、與實施例2 1相同。所得的耐熱遮光薄膜在25 0 °C下進行24小時加熱實驗後，對膜進行評價，沒有出現彎曲和反射率變化導致的色調變化，但膜發生了脫離。在1 5 5 °C下進行24小時的加熱 ® 實驗後也具有相同的結果。但是，在130°C下進行24小時的耐熱性實驗，沒有發現任何彎曲和膜的變色，也沒有發生膜脫離。對衝壓沖孔加工後的樣品也進行在1 30 °C下24小時的加熱實驗，在加工端部沒有發生膜脫離。由此可見，這種耐熱遮光薄膜可以作爲在常溫或1 30°C以下較低溫度下使用的數位照相機等的固定光圈等光學部件使用。 ^ (實施例2 9〜3 1 ) 除了成膜時的氣壓改爲〇.2Pa(實施例29)、0.8Pa(實施例30)、l.〇pa(實施例31)以外，以相同的製造條件製造實施例28構造的耐熱遮光薄膜。所有遮光膜均爲晶體膜，膜中含碳量和含氧量與實施例2 1相同。所得的耐熱遮光薄膜在25 0°C下進行24小時加熱實驗後’對膜進行評價，沒有出現彎曲和反射率變化導致的色調變化，但膜發生了脫離。在155它下進行24小時的加熱實驗後也具有相同的結果。 -57- 200841038 但是’在130°C下進行24小時的耐熱性實驗，沒有發現任何彎曲和膜的變色，也沒有發生膜脫離。對衝壓沖孔加工後的樣品也進行在丨3 〇 °C下的加熱實驗後，加工端部沒有發生膜脫離。由此可見，這種耐熱遮光薄膜可以作爲在常溫或130°C以下較低溫度下使用的數位照相機等的固定光圈等光學部件使用。 (比較例1 8〜1 9) 除了成膜時的氣壓改爲1 .3Pa(比較例1 8)、1 .8Pa(比較 ® 例1 9)以外’以相同的製造條件製造實施例2 8構造的耐熱遮光薄膜。所有遮光膜均爲非晶體膜，與實施例2 8〜3 1不同。膜中含碳量和含氧量均與實施例21相同。對所得的耐熱遮光薄膜在1 3 0 °C下進行2 4小時的耐熱性實驗，發生了彎曲和由反射率改變導致的色調變化，膜的脫離也很顯著。在8 0°C下進行24小時，或者在100 °C下進行24小時耐熱性實驗，也得到相同的結果。由此可見，這種耐熱遮 B 光薄膜作爲在1 3 0 °C以下較低溫度下使用的數位照相機等的固定光圈等光學部件使用也是不可以的。 (實施例32) 除了將成膜過程中的氬氣壓改爲1 .〇Pa，成膜時薄膜的表面溫度改爲5 0〜1 0 〇 °C以外，以與實施例1 1相同的製造條件製造實施例1 1構造的耐熱遮光薄膜。這種薄膜表面溫度可以通過將冷卻罐的溫度設爲-20〜20 °C的範圍內而調節。遮光膜爲如第7圖所示的晶體膜，膜中含碳量和含氧 -58- .200841038 量與實施例1 1相同。所得的耐熱遮光薄膜在2 5 0 °c下進行2 4小時加熱實驗後，對膜進行評價，沒有出現彎曲和反射率變化導致的色調變化，但膜發生了脫離。在1 5 5 °C下進行2 4小時的加熱實驗後也具有相同的結果。但是，在1 3 0 °C下進行2 4小時的耐熱性實驗，沒有發現任何彎曲和膜的變色，也沒有發生膜脫離。對衝壓沖孔加工後的樣品也進行在1 3 0艺下的加熱實驗後，加工端部 ® 沒有發生膜脫離。由此可見，這種耐熱遮光薄膜可以作爲在常溫或1 3 0 °C以下較低溫度下使用的數位照相機等的固定光圈等光學部件使用。 (比較例2 0 ) 除了成膜時的氣壓改爲1 .5Pa以外，以相同的製造條件製造實施例32構造的耐熱遮光薄膜。膜中含碳量和含氧量與實施例1 1相同。對遮光膜進行X射線繞射測定，沒有發現繞射峰，爲非晶體膜，與實施例1 1和實施例3 2不相同。 ^ 對所得的耐熱遮光薄膜在1 3 0°C下進行24小時的耐熱性實驗，發生了彎曲和由反射率改變導致的色調變化，膜的脫離也很顯著。在8 0°C下進行24小時，或者在100 °C下進行24小時耐熱性實驗，也得到相同的結果。由此可見，這種耐熱遮光薄膜作爲在1 3 0 °C以下較低溫度下使用的數位照相機等的固定光圏等光學部件使用也是不可以的。 (比較例2 1 ) -59- 200841038 除了遮光膜的濺射氣壓改爲1.5 Pa以外，以與實施例 1 1相同的條件製造實施例1構造的耐熱遮光薄膜。聚醯亞胺的種類、厚度、表面粗糙度、碳化鎢膜的厚度與實施例 1 1相同。在與實施例1同樣地進行碳化鈦膜的濺射時，薄膜的表面溫度通過紅外線輻射溫度計，由捲取式濺射裝置的石英玻璃視窗測定，溫度爲1 8 5〜1 9 5 °C，具有與實施例1 1 同等的溫度。製得的耐熱遮光薄膜的評價（光學性能、耐熱性）以與實施例1同樣的方法、條件進行。其結果是：光密度、反射率、光澤度等性能獲得與實施例1同等的水準。並且，確認表面電阻値爲105 Ω/□，表面算術平均高度 Ra爲 0·4μπι。膜中含碳量和含氧量與實施例11相同。但是，遮光膜通過X射線繞射測定，沒有觀察到繞射峰，可見爲非晶體結構。對在250°C下進行24小時加熱試驗後的膜進行評價，雖然沒有出現彎曲，但是發生了膜脫離，由反射率改變導致的色調變化也很顯著。膜的截面透過TEM觀察，遮光膜的表面和聚醯亞胺一側的，膜被氧化。據此認爲這是膜密合性降低和色調發生變化而產生的。由此可見，這種耐熱遮光薄膜不能作爲在高溫環境下使用的液晶投影機的光圈等部件使用。 -60- .200841038 ί _義雜礙^ The film surface temperature was changed to 50 to 100 °C except for film formation. The same manufacturing conditions as those of the heat-resistant light-shielding film of the construction example 1 can be adjusted by setting the temperature of the cooling tank to -20. The light-shielding film was a crystal film, and the carbon content in the film was the same as in Example 1. After the obtained heat-resistant light-shielding film was subjected to 24 hours at 250 ° C, the film was evaluated, and no change in bending and reflectance change occurred, but the film was detached. The same results were obtained after 24 experiments at 155 °C. However, heat resistance at 12 ° C for 24 hours achieved any bending and discoloration of the film, and no film detachment occurred. The processed sample was also subjected to heating at 130 ° C for 24 hours without film detachment at the working end. From this, it can be seen that this heat resistance is used as an optical member such as a fixed aperture which is used at a normal temperature or a temperature lower than 1301. (Example 2 8) The SUS foil sheet was changed in the same manner as in the case of g example 26. However, the film was formed in addition to the increase in the blocking torque. This thin ~20 °C vana oxygen content and real-time heating experiments led to the color of the hour of heating test, no punching punching experiment, in the addition of light-shielding film digital camera -56- ♦200841038 in addition to film formation A heat-resistant light-shielding film of the structure of Examples 2 to 2 3 was produced under the same manufacturing conditions except that the film surface temperature was changed to 50 to 100 °C. The film surface temperature can be adjusted by setting the temperature of the cooling tank to a range of -20 to 20 °C. The light-shielding film was a crystal film, and the carbon content and oxygen content in the film were the same as in Example 21. After the obtained heat-resistant light-shielding film was subjected to a heating test at 25 ° C for 24 hours, the film was evaluated, and no change in color tone due to a change in bending and reflectance occurred, but the film was detached. The same results were obtained after 24 hours of heating at 1 5 5 °C. However, the heat resistance test was conducted at 130 ° C for 24 hours, and no bending or discoloration of the film was observed, and no film detachment occurred. The sample after punching and punching was also subjected to a heating test at 1 30 ° C for 24 hours, and no film detachment occurred at the processing end. Thus, the heat-resistant light-shielding film can be used as an optical member such as a fixed aperture such as a digital camera used at a normal temperature or at a lower temperature of 130 ° C or lower. ^ (Example 2 9 to 3 1 ) The same production was carried out except that the gas pressure at the time of film formation was changed to 2.2Pa (Example 29), 0.8 Pa (Example 30), and 〇pa (Example 31). The heat-resistant light-shielding film of Example 28 was fabricated under the conditions. All of the light-shielding films were crystalline films, and the carbon content and oxygen content in the film were the same as in Example 21. The obtained heat-resistant light-shielding film was subjected to a heating test at 25 ° C for 24 hours, and the film was evaluated, and no change in color tone caused by changes in bending and reflectance occurred, but the film was detached. The same results were obtained after a 24 hour heating experiment under 155. -57- 200841038 However, the heat resistance test was carried out at 130 ° C for 24 hours, and no bending or discoloration of the film was observed, and no film detachment occurred. The sample after punching and punching was also subjected to a heating test at 丨3 〇 °C, and no film detachment occurred at the processed end. Thus, the heat-resistant light-shielding film can be used as an optical member such as a fixed aperture such as a digital camera used at a normal temperature or a temperature lower than 130 °C. (Comparative Example 1 8 to 1 9) The structure of Example 2 was produced under the same manufacturing conditions except that the gas pressure at the time of film formation was changed to 1.3 Pa (Comparative Example 18) and 1.8 Pa (Comparative Example 1 9). Heat resistant shading film. All of the light-shielding films were amorphous films, which were different from Examples 28 to 31. The carbon content and oxygen content in the film were the same as in Example 21. The obtained heat-resistant light-shielding film was subjected to a heat resistance test at 140 ° C for 24 hours, and warpage and change in color tone caused by change in reflectance occurred, and the film detachment was also remarkable. The same results were obtained by performing a heat resistance test at 80 ° C for 24 hours or at 100 ° C for 24 hours. From this, it is understood that such a heat-resistant B-light film is not usable as an optical member such as a fixed aperture such as a digital camera used at a lower temperature of 130 ° C or lower. (Example 32) The same production conditions as in Example 11 were carried out except that the argon gas pressure during the film formation was changed to 1. 〇Pa, and the surface temperature of the film at the time of film formation was changed to 50 to 10 〇 ° C. The heat-resistant light-shielding film of Example 1 was fabricated. The film surface temperature can be adjusted by setting the temperature of the cooling tank to a range of -20 to 20 °C. The light-shielding film was a crystal film as shown in Fig. 7, and the amount of carbon in the film and the amount of oxygen-containing -58-200841038 were the same as those in Example 11. After the obtained heat-resistant light-shielding film was subjected to a heating test for 24 hours at 250 ° C, the film was evaluated, and no change in color tone due to a change in bending and reflectance occurred, but the film was detached. The same results were obtained after a 24 hour heating experiment at 1 5 5 °C. However, the heat resistance test at 24 ° C for 24 hours did not reveal any bending or discoloration of the film, and no film detachment occurred. After the punching and punching of the sample was also subjected to a heating test at 130 °, no film detachment occurred at the processed end ® . Thus, the heat-resistant light-shielding film can be used as an optical member such as a fixed aperture such as a digital camera used at a normal temperature or at a lower temperature of 130 ° C or lower. (Comparative Example 20) A heat-resistant light-shielding film of the structure of Example 32 was produced under the same production conditions except that the gas pressure at the time of film formation was changed to 1.5 Pa. The carbon content and oxygen content in the film were the same as in Example 11. The X-ray diffraction measurement of the light-shielding film revealed no diffraction peak and was an amorphous film, which was different from Example 1 1 and Example 32. ^ The obtained heat-resistant light-shielding film was subjected to a heat resistance test at 130 ° C for 24 hours, and bending and a change in color tone caused by a change in reflectance occurred, and the film detachment was also remarkable. The same results were obtained by performing a heat resistance test at 80 ° C for 24 hours or at 100 ° C for 24 hours. From this, it is understood that such a heat-resistant light-shielding film is not usable as an optical member such as a fixed aperture such as a digital camera used at a lower temperature of 130 ° C or lower. (Comparative Example 2 1) -59-200841038 A heat-resistant light-shielding film of the structure of Example 1 was produced under the same conditions as in Example 1 except that the sputtering gas pressure of the light-shielding film was changed to 1.5 Pa. The type, thickness, surface roughness, and thickness of the tungsten carbide film of the polyimide were the same as in Example 11. When the titanium carbide film was sputtered in the same manner as in Example 1, the surface temperature of the film was measured by an infrared radiation thermometer by a quartz glass window of a take-up sputtering apparatus at a temperature of 185 to 195 ° C. The temperature was the same as that of Example 11. The evaluation (optical performance, heat resistance) of the obtained heat-resistant light-shielding film was carried out in the same manner and under the same conditions as in Example 1. As a result, performances such as optical density, reflectance, and gloss were obtained at the same level as in Example 1. Further, it was confirmed that the surface resistance 値 was 105 Ω/□, and the arithmetic mean height Ra of the surface was 0·4 μm. The carbon content and oxygen content in the film were the same as in Example 11. However, the light-shielding film was measured by X-ray diffraction, and no diffraction peak was observed, and it was found to be an amorphous structure. The film after the 24 hour heating test at 250 ° C was evaluated, although no bending occurred, but film detachment occurred, and the change in color tone caused by the change in reflectance was also remarkable. The cross section of the film was observed by TEM, and the surface of the light-shielding film and the side of the polyimide were oxidized. It is considered that this is caused by a decrease in film adhesion and a change in color tone. Thus, such a heat-resistant light-shielding film cannot be used as a diaphragm or the like of a liquid crystal projector used in a high temperature environment. -60- .200841038 ί _

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CN撇備註遮光薄膜的性能摩擦係數 0.3以下 0.3以下 0.3以下 0.3以下 0.3以下 [ :0.3以下 0.3以下 0 J以下 0.3以下 0.3以下 0.3以下 0.3以下 mmm 〇〇〇 X X X X X X X X X 可見光區的最大反射率 m cn ΓΛ v〇容可見光區的光密度〇 4以上 Ο <Ν 4以上I 4以上 1 4以上 4以上 4以上 4以上 4以上 4以上 4以上表面電阻 300 Ω/Π ΙΙΟΩ/D 86 Ω〇 86 Ω/口 86Ω/Π 91Ω/口 83Ω/Π 98Ω/Π 91 Ω/Π 92 Ω/口 82Q/D 90Ω/Π 成膜面的表面粗糙度Ra 0.4μπι 0·05μπι 2.2μηι 0.4μπι _ 0.4μπι 0.4μηι 0.4μιη 0.3μιη 0.3μτη 0.5 μπι 0.5μηι 0.4μιη 成膜時薄膜表面溫度 180 〜200〇C 200〜210〇C 200 〜210〇C| 200 〜210〇C 200〜210〇C 190〜203°C 190〜203〇C 205 〜213°C 205 〜213°C 200 〜210〇C 200〜210〇C 155〜158〇C 成膜面 fl 疆 1 1 1 1 1 1 1 1 1 1 1 遮光膜侧 ft 90nm 200nm llOnm 200nm | 200nm 150nm 150nm 270nm 270nm 230nm 230nm 200nm 組成 C/Ti=0.8 C/Ti=0.8 C/Ti=0.8 C/Ti=0.15 C/Ti=0 C/W=0.1 c/w=o C/Si=0.2 C/Si=0 C/A1=0.1 C/A1=0 C/Ti=0 組成 Ο Ρ U U U P 〇 U ύ U < < 樹脂薄膜表面粗糙度Ra 0.5μιη 0.1 μιη 2.3 μιη 0.5μηι 0.5μηι 0,5μιη 0.5μιη 0.4μηι 0.4μιη 0.6μηι Ο.όμηι 0.5μπι 厚度 75μιη 75μιη 1 75μιη 75μηι 75μπι 50μηι 50μπι 125μπι 125μιη 20μηι 20μιη 25μηι 種類 s § Qh 比較例1 比較例2 比較例3 比較例4 比較例5 比較例6 比較例7 比較例8 比較例9 比較例10 比較例11 比較例12 丨19丨 .200841038 【圖式簡單說明】第1圖是本發明的在基材一面上形成金屬碳化物膜的耐熱遮光薄膜的剖視圖； H 2圖是本發明的在基材兩面上形成金屬碳化物膜的耐熱遮光薄膜的剖視圖； H 3B是演示製造本發明耐熱遮光薄膜時使用的捲取式的基材冷卻式濺射裝置的一例的示意圖； Φ 第4圖是演示製造本發明耐熱遮光薄膜時使用的捲取式濺射裝置（浮法）的一例的示意圖；第5圖是使用本發明耐熱遮光薄膜的光圈機構的示意圖。第6圖是由本發明的方法製造的耐熱遮光薄膜.的遮光膜 (碳化鈦膜）的X射線繞射圖譜。第7圖是由本發明的方法製造的耐熱遮光薄膜的遮光膜 (碳化鎢膜）的X射線繞射圖譜。 φ 【元件符號簡單說明】 0 耐熱遮光薄膜 1 樹脂薄膜基材 2 金屬碳化物膜 5 捲出車毘 6 真空泵 7 真空槽 8 罐滾筒 9 捲取輥 -63- 200841038 10 磁控管陰極 11 靶 12 隔板 13 支援輥 14 耐熱遮光葉片 15 導向孑L 16 導向銷 17 銷 18 基板 19 孔 20 開口部 -64-CN撇Remarks The performance of the light-shielding film is 0.3 or less and 0.3 or less and 0.3 or less and 0.3 or less and 0.3 or less. [: 0.3 or less and 0.3 or less, 0 J or less, 0.3 or less, 0.3 or less, 0.3 or less, 0.3 or less, mm mm. XXXXXXXXX Maximum reflectance in the visible light region, m cn ΓΛ v The optical density in the visible light region is 〇4 or more Ο <Ν 4 or more I 4 or more 1 4 or more 4 or more 4 or more 4 or more 4 or more 4 or more 4 or more surface resistance 300 Ω / Π ΙΙΟ Ω / D 86 Ω 〇 86 Ω / Port 86Ω/Π 91Ω/port 83Ω/Π 98Ω/Π 91 Ω/Π 92 Ω/port 82Q/D 90Ω/Π Surface roughness of the film surface Ra 0.4μπι 0·05μπι 2.2μηι 0.4μπι _ 0.4μπι 0.4μηι 0.4 Ιιη 0.3μιη 0.3μτη 0.5 μπι 0.5μηι 0.4μιη Film surface temperature 180~200〇C 200~210〇C 200~210〇C| 200~210〇C 200~210〇C 190~203°C 190~ 203〇C 205 ～213°C 205 ～213°C 200 〜210〇C 200~210〇C 155~158〇C Film surface fl Xinjiang 1 1 1 1 1 1 1 1 1 1 1 Light shielding film side ft 90nm 200nm llOnm 200nm | 200nm 150nm 150nm 270nm 270nm 2 30nm 230nm 200nm Composition C/Ti=0.8 C/Ti=0.8 C/Ti=0.8 C/Ti=0.15 C/Ti=0 C/W=0.1 c/w=o C/Si=0.2 C/Si=0 C /A1=0.1 C/A1=0 C/Ti=0 Composition Ο Ρ UUUP 〇U ύ U << Resin film surface roughness Ra 0.5μιη 0.1 μιη 2.3 μιη 0.5μηι 0.5μηι 0,5μιη 0.5μιη 0.4μηι 0.4 Μιη 0.6μηι Ο.όμηι 0.5μπι Thickness 75μιη 75μιη 1 75μιη 75μηι 75μπι 50μηι 50μπι 125μπι 125μιη 20μηι 20μιη 25μηι Type s § Qh Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Comparative Example 5 Comparative Example 6 Comparative Example 7 Comparative Example 8 Comparative Example 9 Comparative Example 10 Comparative Example 11 Comparative Example 12 丨19丨.200841038 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a heat-resistant light-shielding film in which a metal carbide film is formed on one surface of a substrate of the present invention; A cross-sectional view of a heat-resistant light-shielding film in which a metal carbide film is formed on both surfaces of a substrate of the present invention; H 3B is a schematic view showing an example of a wound-type substrate-cooling type sputtering apparatus used for producing the heat-resistant light-shielding film of the present invention; Φ Figure 4 is a demonstration View showing an example of a winding type sputtering apparatus (float) used when making the heat-resistant light-shielding film of the present invention; FIG. 5 is a schematic view showing a diaphragm mechanism using a heat shielding film of the invention. Fig. 6 is an X-ray diffraction pattern of a light-shielding film (titanium carbide film) of a heat-resistant light-shielding film produced by the method of the present invention. Fig. 7 is an X-ray diffraction pattern of a light-shielding film (tungsten carbide film) of a heat-resistant light-shielding film produced by the method of the present invention. φ [Simple description of component symbol] 0 Heat-resistant light-shielding film 1 Resin film substrate 2 Metal carbide film 5 Roll-out car 6 Vacuum pump 7 Vacuum tank 8 Can drum 9 Winding roller -63- 200841038 10 Magnetron cathode 11 Target 12 Separator 13 Support roller 14 Heat-resistant light-shielding blade 15 Guide 孑L 16 Guide pin 17 Pin 18 Substrate 19 Hole 20 Opening-64-

Claims

.200841038 X. Patent Application Range: 1 · A heat-resistant light-shielding film characterized by a resin film substrate (A) having a heat resistance of 150 ° C or higher and a surface or both surfaces of the resin film substrate (A) a heat-resistant light-shielding film of the light-shielding film (B) of the crystalline metal carbide film (Me C), the light-shielding film (B) having a thickness of 100 nm or more and a surface roughness of 〇.1 to 2.1 μmη (arithmetic mean height Ra), and The atomic ratio (C/Me) of the carbon halogen (C) to the total metal element (Me) in the metal carbide film (MeC) is 0.3 or more. 2. The heat-resistant light-shielding film according to claim 1, wherein the resin film substrate (A) is derived from polyethylene naphthalate, polyimide, aromatic polyamine, polyphenylene sulfide One or more selected from the group consisting of ether or polyether boron. 3. The heat-resistant light-shielding film according to claim 1 or 2, wherein the heat resistance of the resin film substrate (A) is 20 °C or higher. The heat-resistant light-shielding film according to any one of claims 1 to 3, wherein the resin film substrate (A) has a thickness of 5 to 200 μm. The heat-resistant light-shielding film according to any one of claims 1 to 4, wherein the surface roughness of the resin film substrate (Α) is 0.2 to 2.2 μm (arithmetic average height!?^) . The heat-resistant light-shielding film according to any one of claims 1 to 5, wherein the light-shielding film (B) has a thickness of 11 〇 to 55 〇 nm. The heat-resistant light-shielding film according to any one of claims 1 to 6, wherein the metal carbide film (MeC) is formed from tantalum carbide, titanium carbide, aluminum carbide, tantalum carbide, tungsten carbide, carbonization. One or more materials selected from molybdenum, vanadium carbide, carbonized giant, chromium carbide or tantalum carbide are used as main components. The heat-resistant light-shielding film according to any one of claims 1 to 7, characterized in that the carbon element (C) in the metal carbide film (MeC) is relative to all the metal elements (Me) The atomic ratio (C/Me) is 〇.5 or more. The heat-resistant light-shielding film according to any one of claims 1 to 8, characterized in that the oxygen content (Ο) in the metal carbide film (M e C) is relative to all metal elements (Me) The atomic ratio (〇/Me) of the oxygen element (〇) is 0.5 or less. 1 〇 A heat-resistant light-shielding film according to any one of claims 1 to 9, characterized in that the light-reflecting film (B) has a light reflectance of 10% or less at a wavelength of 380 to 780 nm. The heat-resistant light-shielding film according to any one of claims 1 to 10, wherein the optical density as an index of light-shielding is 4 or more at a wavelength of 380 to 7 8 Onm. The heat-resistant light-shielding film according to any one of claims 1 to 11, wherein a metal carbide film having the same composition as that of the film 0 is formed on both surfaces of the resin film substrate (A) ( MeC). A method for producing a heat-resistant light-shielding film according to any one of claims 1 to 12, which is characterized in that the resin film substrate (A) having heat resistance of 155 t or more and a light-shielding film ( B) A method for producing a heat-resistant light-shielding film of a metal carbide film (MeC) formed on the surface or both surfaces of the resin film substrate (A), which has a surface roughness of 0.2 to 2.2 μm (arithmetic average height Ra) The resin film substrate (Α) is placed in a sputtering apparatus, and a metal carbide target is used to form a thickness of 1 (0 nm or more) on the resin film substrate (A) by a sputtering method in an inert gas atmosphere. The surface roughness is 〇.1 to -66-.200841038 2.1μπι (arithmetic mean height Ra), and the atomic ratio of carbon element (C) to all metal elements (Me) in the metal carbide film (Mec) (C /Me) is a crystalline metal carbide film (Me C) of 0.3 or more. 1 . The method for producing a heat-resistant light-shielding film according to claim 13 , wherein the heat-resistant light-shielding film on which the metal carbide film (MeC) is formed is further placed in a sputtering apparatus by sputtering A metal carbide film (MeC) is formed on the other surface of the resin film substrate on which the metal carbide film (MeC) is not formed. 1 5 The method for producing a heat-resistant light-shielding film according to the third or fourth aspect of the patent application is characterized in that the sputtering gas pressure at the time of film formation of the light-shielding film (B) is 0.2 to 1 · 0 P a 〇 1 6 . The method for producing a heat-resistant light-shielding film according to any one of the above-mentioned claims, wherein the surface temperature of the resin film substrate (A) when the light-shielding film (B) is formed is 1 80 °. Above C. The manufacturing method of φ of the heat-resistant light-shielding film according to any one of claims 1 to 16 is characterized in that the resin film substrate (A) is wound into a cylindrical film transporting in a sputtering apparatus In the upper portion, when the winding portion is wound up to the winding portion, film formation is performed by a sputtering method. The method for producing a heat-resistant light-shielding film according to any one of claims 3 to 17, characterized in that the resin film substrate (A) is wound into a cylindrical shape and disposed in a film conveying portion of the sputtering apparatus. When the film is conveyed to the winding portion by the winding portion, the film formation is performed by a sputtering method, and when the film is formed, the resin film substrate (A) is not cooled, and the film is formed in a suspended state in the film forming chamber. 1 9 · An aperture having excellent heat resistance is produced by processing a heat-resistant light-shielding film of any one of the above-mentioned patents No. 1 to Item No. -67 - 200841038. A light-receiving device which is a heat-resistant light-shielding film according to any one of claims 1 to 12.

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