200837514 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種在微影時於被處理基板上塗布光阻並使其 乾燥固化的基板處理方法，以及對塗布於基板上的光阻在實施^ 烤處理之别先實施既定表面處理的光阻表面處理裝置。、、 【先前技術】 製造液晶顯示态(LCD)時，在微影步驟中於被處理基板 基板)上塗布光阻後會立刻接著再進行加熱處理，亦即預 ， 以，光阻巾的赫賴（-般為轉劑)蒸發，惟料* 理單元喊到絲板接綱升降銷、支觸或是真空溝槽等的^ 度影響，可能會造成溶賴發不均、光_厚均 題^ ===理之前，可先進行減壓乾燥處理，其境ΐ 抑制表體丄動;)二 ====爾處理時 ㈣典縣置，例如專利文獻1所記_，且有朝上 托盤或是淺絲器型的下部處理室，以及以,氣⑥ =肷&於該下部處理室上面的蓋狀的上部處理室。在；二 i台ί置口ϋ室處理完畢的基板水平載置於該處 二7 處至（將上部處理室密合於下部處理室上、㈣— 哭ΐΐΐί成減壓狀態。欲將基板搬人/搬出處理室時，用起ΐ ϊ工ΐ將！來裝载/卸載基板的處；台液， 搬入/搬出乃至裝=嚣S3機 以設置複數的支持銷，基板可載置於銷 [專利文獻】]特開2000-181079 200837514 【發明内容】 … [發明所欲解決的問題] 如上所述的減壓乾燥裝置，因為減壓程度達到幾乎絶對真 ，丄故處理㈣強度也必須要很大才行，然而規模大成本就;^非 系咼。而且，由於每次要將基板搬入/搬出處理室都必須打開 $閉上部處理室’在基板大型化的情況下會產生各式各樣的處理 障礙。亦即，當基板的尺寸像LCD基板那樣達到一邊超過2 大小時，處理室也明顯地大型化，光是上部處理室就有2嘴以上 構，連因為大幅振動所造成的發 塵問碭或對作業貝女全上的問題也跟著浮現檯面。又，雖麸 m姐著更加大型化，細欲使大祕板健水平並進行 ^彎曲的狀態下被搬運的話，在減壓乾燥裝置的處】室中^』 ίίί搬ϋ至ί載/域時w發纽置驗、碰撞甚至ί損 ϊϋΐί在處理室中基板係放置在突出於處理台上面 減壓乾燥處理的，故在減壓乾燥階段支持鎖的痕 ,、曰轉Ρ到基板上的光阻膜上，這點也是個問題。 -錄ifi上述該料知技術㈣題點，本發明之目的在於提供 峨料㈣的粒發生。 步驟===:基光阻塗布 該基板上的夹尤阻，先阻表面處理步驟，其對著 液成分的^阻二=;;該=，成變質層之化學 =殘存的溶劑蒸發，再加熱該基板==板= 200837514 部，日==阻$處理裝置具備：化學液成分氣體吹送 板配置4用該第，喷ϊίϋ嘴對向剛塗布過光阻之被處理基 構，S該;f ;if學液成分;以及移動機 液成處理基板摘塗布触时送含有化學200837514 IX. Description of the Invention: [Technical Field] The present invention relates to a substrate processing method for coating a photoresist on a substrate to be processed and drying and curing it during lithography, and a photoresist applied to the substrate The photoresist surface treatment device that performs the predetermined surface treatment is first implemented. [Previous Technology] When a liquid crystal display (LCD) is manufactured, after the photoresist is applied to the substrate to be processed in the lithography step, the heat treatment is immediately performed, that is, pre-, to Lai (-------------------------------------------------------------------------------------------------------------------------------------------------------------------------- Before the problem ^ ===, it can be decompressed and dried first, and the environment can inhibit the movement of the body;) 2 ==== when processing (4) Dianxian, for example, the documentary literature 1 is _, and there is The upper tray or the lower processing chamber of the filament type, and the lid-shaped upper processing chamber above the lower processing chamber. The substrate processed in the second chamber is placed at the level of 7 to 7 (the upper processing chamber is tightly attached to the lower processing chamber, (4) - crying ΐΐΐ into a decompressed state. When the person/moving out of the processing room, use the ΐ ϊ ΐ ! to load/unload the substrate; the liquid, move in/out and even install the 嚣S3 machine to set a plurality of support pins, the substrate can be placed on the pin [ [Patent Document]] JP-A-2000-181079 200837514 SUMMARY OF THE INVENTION [Problem to be Solved by the Invention] As described above, the vacuum drying apparatus has a degree of pressure reduction that is almost absolutely true, and therefore, the strength of the treatment (four) must also be very high. If you want to move the substrate into/out of the processing chamber, you must open the $closed upper processing chamber. When the substrate is enlarged, it will be produced in a variety of ways. The processing obstacles, that is, when the size of the substrate reaches one side more than 2 hours as the LCD substrate, the processing chamber is also significantly enlarged, and the upper processing chamber has two nozzles or more, and the hair is caused by large vibration. Dust asks or works on a jobgirl In the case of the decompression drying device, the room is in the room of the decompression drying device, and it is carried out in the state of the decompression drying device. 』 ϋ ϋ ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί This is also a problem. It is also a problem. The object of the present invention is to provide the grain occurrence of the dip material (4). Step ===: The base photoresist is coated on the substrate with a special resistance, and the surface treatment step is first resisted, and the resistance to the liquid component is two =;; =, the chemical of the metamorphic layer = the residual solvent is evaporated, and the substrate is heated again == Plate = 200837514 Part, day == resistance $ processing device: chemical liquid component gas blowing plate arrangement 4 with this, spray ϊ ϋ 对 对 对 对 对 刚 刚 刚 刚 ; ; ; ; ;; Ingredients; and mobile machine liquid processing substrate picking and coating
乾燥;二^- 之前本=、中2在，基板上之光阻吹送含有化學液成分的氣體 2上氣體’利用風壓物理力使其乾燥，並在光阻 if匕3，常薄的變質膜或是其前置膜。對該等前置膜吹送含 ==成》的氣體’可以再現性良好的方式安定形成光阻表面 冷方iiir較佳實施態樣中，係長形噴射噴嘴以帶狀層 二ίΐ ΐ上的光阻吹送含有化學液成分的氣體或是乾燥用氣 I $，且使基板在水平流程搬運通路上約略水平地移動，從 基板:端到另一端沒有遺漏地對基板上的光阻吹送氣體。又， :用複數多段方式沿搬運通路配置喷射喷嘴，對基板上 覆吹送含有化學液成分的氣體。 [對照先前技術之功效] 若依本發明之基板處理方法或光阻表面處理裝置，則藉由如 上所述構造以及作用，便能在剛塗布於被處理基板的光阻表面上 不周減壓乾燥方法就形成適當的變質層，以低成本且有效^的士 式防止光阻膜厚發生不均勻的情況。 ^ 【實施方式】 8 200837514 以下:參照附圖説明本發明較佳實施形態。 S1係表示塗布顯影處理系統的構造實施例，其可適用本 發明之基板處理方法以及光喊面處理裝置。該塗布 室内以例如矩形玻璃基板作為被處理基板並在 CD衣&過私中貫行微影步驟中之洗淨、光阻塗布、預烤理、 等一連串處理的裝置。曝光處理以隣接該系統設 置的外部曝光裝置12進行。 該塗布顯影處理系統1〇，在中心部配置横長的處理站 在其長邊方向（X方向)兩端部上配置匣金站(c/s)i4與 匣盒站(C/S)14係系統1〇的匣盒搬入/搬出口，具備匣盒 理台20與搬運機構22,匣盒處理台2〇可沿水平方向（γ方向）並 排載置E盒C達4m，£盒C可以多段層疊的方式收容複數片的 基板G，搬運機構22可從該處理台20上的匣盒c内搬出基板G， 或將基板G搬入匣盒C。搬運機構22具備搬運臂22a，其可以^ :板G ’並可沿X、γ、ζ、θ等4軸動作’，、細反 G傳遞到隣接處理站(p/s)16該側。 …、，處理站(P/S)16在水平系統長邊方向（X方向)上延伸設置了一 對平行且逆向的製程產線A、B，各處理部依照處理流程 順序配置在該製程產線A、B上。 、更詳細來說，在從匣盒站(C/S)14該側向介面站(i/F)18該侧前 進的亡游部製程產線A上，搬入單元(INpASS)24、洗淨處理部 26、第1熱處理部28、塗布處理部30以及第2熱處理部32沿第 1水平流程搬運通路34從上游側開始依該順序配置成一列。 …更詳細來說，搬入單元(mPASS)24從匣盒站(C/S)14的搬運 ，構>22接收未處理基板g，並利羯既定的引導部將未處理基板G 導入第1水平流程搬運通路34。洗淨處理部26沿第丨水平流程搬 運通路34從上游側開始依序設置準分子uv照射單元(匕^)% 以及揉擦洗淨單元(SCR)38。第1熱處理部28從上游側開始依序 200837514 设置附著單元(AD)40以及冷卻單元(c〇l)42。塗布處理部30從上 游侧開始依序設置光阻塗布單元(C〇t)44以及光阻表面處理單元 (VD)46。第2熱處理部32從上游侧開始依序設置預烤處理單元 (PRE「BAKE)48以及冷卻單元(c〇L)50。位在第2熱處理部32下 游侧鄰近位置的第1水平流程搬運通路34終點上設有傳送單元 (PASS)52。沿第1水平流程搬運通路34流動搬運過來的基板g經 過該終點的傳送單元(PASS)52傳遞到介面站(i/f)18。 a另外，在從介面站(I/F)18該侧向匣盒站(c/S)14該側前進的下 游部製程產線B上，顯影單元(DEV)54、曝後烤單元 (fOST_BAKE)56、冷卻單元(COL)58、檢査單元(Ap)6〇以及搬出 •^元(OUTPASS)62沿第2水平流程搬運通路64從上游側開始依 照，順序配置成一列。在此，曝後烤單元(p〇ST-BAKE)56以及冷 =單元(COL)58構成第3熱處理部66。搬出單元(〇UT pASS)62從 =2水平流程搬運通路64 一片一片地接收處理過的基板g，並傳 遞到匣盒站(C/S.)14的搬運機構22。 在兩條製程產線A、B之間設有輔助搬運空間诏，可以單片 ^單位水平載置基板G的穿梭裝置7()受到未經圖示的驅動機構驅 動，而能在製程產線方向（X方向)上雙向移動。 ^面站(I/F)18具備搬運裝置72，其可在上述第i以及第2水 如=程搬運通路34、64或F粦接之曝光裝置12之間傳遞或接收基 ’該搬運裝置72周圍配置有旋轉處理纟（R/S)74以及周邊裝Dry; two ^- before the =, medium 2, the photoresist on the substrate blows the gas containing the chemical liquid component 2 gas 'use the wind pressure physical force to dry it, and in the photoresist if匕3, often thin deterioration The membrane or its pre-film. For the pre-film blowing, the gas containing ==” can be stably formed in a manner that is good in reproducibility. In the preferred embodiment, the elongated spray nozzle has a light on the strip layer. The gas containing the chemical liquid component or the drying gas I$ is blown off, and the substrate is moved approximately horizontally on the horizontal flow conveyance path, and the gas is blown to the photoresist on the substrate without missing from the substrate: the end to the other end. Further, the injection nozzle is disposed along the conveyance path by a plurality of stages, and the gas containing the chemical liquid component is blown onto the substrate. [Effects of the prior art] According to the substrate processing method or the photoresist surface treatment apparatus of the present invention, by the configuration and action as described above, it is possible to decompress the photoresist surface just applied to the substrate to be processed. The drying method forms a suitable deteriorated layer, and the unevenness of the thickness of the photoresist film is prevented at a low cost and effective. [Embodiment] 8 200837514 Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. S1 is a configuration example of a coating and developing treatment system which can be applied to the substrate processing method and the light surface processing device of the present invention. In the coating chamber, for example, a rectangular glass substrate is used as a substrate to be processed, and a series of processes such as washing, photoresist coating, pre-baking, and the like are performed in the lithography step of the CD clothing & The exposure process is performed with an external exposure device 12 disposed adjacent to the system. In the coating and developing treatment system 1A, a horizontally long processing station is disposed at a central portion thereof, and a sheet metal station (c/s) i4 and a cassette station (C/S) 14 are disposed at both end portions in the longitudinal direction (X direction). The cassette 1 loading/unloading port of the system 1 is equipped with a cassette processing table 20 and a transport mechanism 22, and the cassette processing table 2 can carry E box C side by side in the horizontal direction (γ direction) up to 4 m, and the cassette C can be multi-stage. The substrate G of a plurality of sheets is accommodated in a stacked manner, and the transport mechanism 22 can carry out the substrate G from the cassette c on the processing table 20 or carry the substrate G into the cassette C. The transport mechanism 22 is provided with a transport arm 22a which can be moved along the four axes of X, γ, ζ, θ, etc., and the fine reverse G is transmitted to the side adjacent to the processing station (p/s) 16. ..., the processing station (P/S) 16 is provided with a pair of parallel and reverse process lines A and B extending in the longitudinal direction (X direction) of the horizontal system, and each processing unit is arranged in the process according to the processing flow. Lines A and B. More specifically, the loading unit (INpASS) 24 is cleaned on the downstream production line A from the side of the side interface station (i/F) 18 from the box station (C/S) 14. The processing unit 26, the first heat treatment unit 28, the coating processing unit 30, and the second heat treatment unit 32 are arranged in a row along the order from the upstream side along the first horizontal flow conveyance path 34. ...more specifically, the carry-in unit (mPASS) 24 receives the unprocessed substrate g from the transport of the cassette station (C/S) 14, and introduces the unprocessed substrate G into the first one by a predetermined guide. Horizontal flow handling path 34. The cleaning processing unit 26 sequentially sets the excimer uv irradiation unit (匕^)% and the scrubbing cleaning unit (SCR) 38 from the upstream side along the second horizontal flow transport path 34. The first heat treatment unit 28 is provided with an attachment unit (AD) 40 and a cooling unit (c〇l) 42 in order from the upstream side in the order of 200837514. The coating processing unit 30 sequentially sets the photoresist coating unit (C〇t) 44 and the photoresist surface treatment unit (VD) 46 from the upstream side. The second heat treatment unit 32 sequentially sets the pre-bake processing unit (PRE "BAKE" 48 and the cooling unit (c〇L) 50 from the upstream side. The first horizontal flow conveyance path is located adjacent to the downstream side of the second heat treatment portion 32. A transfer unit (PASS) 52 is provided at the end point 34. The substrate g transported and transported along the first horizontal flow path 34 is transferred to the interface station (i/f) 18 via the transfer unit (PASS) 52 of the end point. On the downstream process line B from the side of the interface station (I/F) 18 to the side of the cassette station (c/S) 14, the developing unit (DEV) 54, the post-exposure unit (fOST_BAKE) 56, The cooling unit (COL) 58, the inspection unit (Ap) 6〇, and the unloading unit (OUTPASS) 62 are arranged in a row along the second horizontal flow conveyance path 64 from the upstream side. Here, the post-exposure baking unit ( The p〇ST-BAKE) 56 and the cold=unit (COL) 58 constitute the third heat treatment unit 66. The carry-out unit (〇UT pASS) 62 receives the processed substrate g one by one from the =2 horizontal flow conveyance path 64 and transmits it. To the handling mechanism 22 of the box station (C/S.) 14. There is an auxiliary handling space between the two process lines A and B, which can be a single piece of water. The shuttle device 7 () on which the substrate G is placed is driven by a drive mechanism (not shown) to be bidirectionally movable in the process line direction (X direction). The surface station (I/F) 18 is provided with a transport device 72. The first and second waters can be transferred or received between the exposure devices 34 and 64 or the exposure device 12 connected to the F. The rotating device R (R/S) 74 and the periphery are disposed around the carrier device 72. Loading
△，用。理台（R/S)74係可在水平面上旋轉基板G的處理 二A來在^曝光裝置12傳遞接收基板G時改變長方形基板G 置(EE^m置76把例如資訊記印器（titler)或周邊曝光裝 (e)4構件跟弟2水平流程搬運通路64連接。 +驟ΐ i係表示該塗布顯影處理総對1片基板G所進行之全部 順序。首先，e盒站(c/s)i4之搬運機構22從處理台 λί理ΐ C M 1基板G，並料板G搬 站(p/s)16中製程產線A該侧的搬人單元(IN PASS)24(步驟 10 200837514 單元(黯鄉4被移_人到第1水平 破導入第1水平流程搬運通路34的基板G，一 處理部26中依序接受準分子， 反 實，外瓣處理乂 馳H尹早兀(SCR)38對在水平流程搬運通路34上水平 3的實施沖刷洗淨或吹氣洗淨以除去基板表面的粒子狀 ====最細氣刀等工具使基板G乾燥。 這樣i第’1 聊中的—連串洗淨處理終了後，基板〇就 樣2 ί平 運通路34下線並通過第1熱處理部28。 理ί 28中’首先附著單元(AD)4G使用蒸氣狀的 ethyldiSilaZane ; HMDS)對基板作施 :者，理’將被處理面附著化（步_)。該附著處理終了後， 早几fCOL)42將基板G冷卻到系統設定的基板溫度(步驟 處基糾料1水平流織麵路34下義進入塗布 在塗布處理部30巾，一開始光阻塗布單元(COT)#對保 平k動的基板G用狹缝噴嘴以非旋轉方式在基板表面 理 塗布光阻液，之後下游該侧隣近的光阻表面處理單元(VD)46 對基板G進行後述的變質層形成處理(步驟S6)。 w Jit布處理部30送出來的基板G自第1水平流程搬運通路 34下線並通過第2熱處理部32。在第2熱處理部32中，一 預烤處理單元(PRE-BAKE)48對基板G進行預烤處理，當作^ 塗布後的熱處理或是曝光前的熱處理(步驟S7)。該 理 基板G上之光賴情殘留織發除去，可強mm 2附著性。接著’冷卻單元(a)L)5()將基板G冷卻到系統設^ 的基板溫度（步驟S8)。然後，介面站(1/17)18的搬運裝置乃從 水平流程搬運通路34其終點的傳送單元(PASS)52將基板1 在介面站(师8巾，基板G被旋轉處理台74旋^如^走度 11 200837514 改變^後’再被搬入周邊裝置76的周邊曝光裝置内. ^里基板G在其周邊部所附著的光阻接受顯影時除去(用“ 後，被达到隣近的曝光裝置12(步驟S9)。 、 接著曝的光阻曝光以形成既定的路圖案。 接者®案曝先几成的基板G從曝光裝置12被送回介面站 (=)18(= S9) ’並紐人周邊裝置76的資訊記印器（titler) 内，以在基板的既定部位上記印既定資訊(步驟sl〇)。缺後，^ G—置72搬人敷設在處理站(p/s)16之製程產線B該“ 弟2水平▲程搬運通路64之顯影單元(DEV)54的起始點。 如是，基板G這次被搬到第2水平流程搬運通路料上並向 程產線B下游侧前進。—開始麵影單元(DEV)54巾，基板^ 被水平流動搬運期間受到顯影、漂洗、乾燥等一連串的顯影處理(步 驟 S11) 〇 經過顯影單元(DEV)54 —連串顯影處理完成的基板G，沿第2 水平抓耘搬，通路64依序通過第3熱處理部66以及檢査單元 (AP)60。在第3熱處理部66中，基板〇最初送到曝後烤單元 (POST-BAKE)56接受曝後烤，當作顯影處理後的熱處理(步驟 sp。該曝後烤可將基板G上之光賴所殘留_影液或洗淨液 瘵發除去，並強化光阻圖案在基板上的附著性。其次，冷卻單元 (COL)58將基板G冷卻到系統設定的基板溫度(步驟S13)。檢査單 兀(AP)60對基板G上的光阻圖案進行非接觸式的線寬檢査或膜質 膜厚檢査等(步驟S14)。 、 搬出單元(OUT PASS)62接收經過第2水平流程搬運通路64 所有步驟處理終了的基板G，並傳遞到匣盒站(c/s)14的搬運機構 22去。在£盒站(c/s)i4該側，搬運機構22把從搬出單元(out PASS)6丄接吹過來的已處理基板〇 一片一片的收容到(通常是原來 的)ϋ盒c内(步驟si)。 在該塗布顯影處理系統10中，本發明可適用在塗布處理部30 内的光阻表面處理單元(VD)461。以下，就圖3〜圖5詳細説明 12 200837514 塗布處理部30内其光阻表面處理單元 圖。ί 示該實施形態之塗布處理部3〇其全體構造的俯視 俾奢示光阻表面處理單元(VD)46其構造的側視圖，圖5 ㈣處理單·)46社要部位之作用的一部份1 1構ϋ t ’光阻塗布單元(COT)44，具傷：浮上式處理台80， 搬27 ΐ流程搬運通路3’ D之—部份或—健間；基板 S更新表錢喷嘴更新部86’其在塗布處理間i 偷8G表面上設置了複數的氣體喷射孔88，其可朝上方喰 力了，基板G空*在距離處理台表面—定高度之處。 椒I 運機構82 ’具備夾著處理台8G並朝Χ方向延伸的- 對引V執90Α、90Β，·滑動部92，其可沿該等 返移動；吸附墊等的基板保持構件(未經圖示），其設主 92上’可吸附基板G的兩娜端部，將基板g保持在處理台月如丄； =及夕直進移動機構（未經圖示），其使滑動部％朝搬運方向’ 向)移動，以在處理台80上空浮搬運基板G。 光阻喷嘴84，其係在處理台8〇上方朝 喷嘴更新部86 ϋ呆持在位於處理台8 構件96上’具備:準備處理修其使光阻嘴上嘴方:::置光=柱 13 200837514 以作為實行塗布處理的事先準備；蒗氣喷 ===構102 ’其用來除去附著在光阻喷嘴上 在此’説明光阻塗布單元(COT)44 段第丄熱處理部28(圖i)例如以滾輪方式運的可 j置f處理台8G前端側的搬人部，在 ^ 並接收基板G。基板G在處理台80上受到氣保= 之氣體(空氣)的壓力，而被維持成約略 浮 斤贺射△, use. The stage (R/S) 74 is capable of rotating the substrate G in the horizontal plane to change the rectangular substrate G when the exposure device 12 transmits the receiving substrate G (EE^m is set to 76, for example, an information recorder (titler) Or the peripheral exposure device (e) 4 member is connected to the parent horizontal 2 flow conveyance path 64. +Squeeze i indicates the entire sequence of the coating development process for one substrate G. First, the e-box station (c/) s) The transport mechanism 22 of i4 is from the processing station λ ΐ CM CM 1 substrate G, and the loading plate G (p/s) 16 of the process line A on the side of the moving unit (IN PASS) 24 (step 10 200837514 The unit (the township 4 is moved to the first level and is introduced into the substrate G of the first horizontal flow conveyance path 34, and the processing unit 26 sequentially receives the excimer, and the outer valve is processed by the outer valve. SCR) 38 performs flushing or blowing cleaning on the level 3 in the horizontal flow conveyance path 34 to remove particles on the surface of the substrate. ==== The tool such as the finest air knife dries the substrate G. Thus i'1 In the chat - after the series of washing treatments are finished, the substrate 〇 2 ί flat transport path 34 goes offline and passes through the first heat treatment portion 28. (AD) 4G uses a vaporous ethyldiSilaZane; HMDS) to apply to the substrate: 'The surface to be treated is adhered (step _). After the adhesion process is finished, the substrate G is cooled to the system setting by a few fCOL) 42 The substrate temperature (the step of the base material 1 is the horizontal flow of the weaving surface 34, and the coating is applied to the coating processing unit 30, and the photoresist coating unit (COT) is used to stop the substrate G. The photoresist is applied to the surface of the substrate in a rotating manner, and then the photoresist surface treatment unit (VD) 46 adjacent to the downstream side performs a metamorphic layer forming process (step S6) to be described later on the substrate G. The w Jit cloth processing unit 30 sends out The substrate G is discharged from the first horizontal flow conveyance path 34 and passes through the second heat treatment unit 32. In the second heat treatment unit 32, a pre-baking unit (PRE-BAKE) 48 pre-bakes the substrate G as a ^ The heat treatment after coating or the heat treatment before the exposure (step S7). The light on the substrate G is removed by the woven hair, and the adhesion can be enhanced by mm 2 . Then the cooling unit (a) L) 5 () G is cooled to the substrate temperature of the system setting (step S8). Then, the interface station (1/17) 18 is loaded. From the transfer unit (PASS) 52 of the horizontal flow conveyance path 34, the substrate 1 is placed in the interface station (the teacher 8 towel, the substrate G is rotated by the rotation processing table 74, and the movement degree 11 200837514 is changed ^ then moved in) In the peripheral exposure device of the peripheral device 76, the substrate G is removed when the photoresist attached to the peripheral portion thereof is subjected to development (after "before, it is brought to the adjacent exposure device 12 (step S9). Then, the exposed photoresist is exposed to form a predetermined road pattern. The substrate G exposed by the receiver is sent back from the exposure device 12 to the interface station (=) 18 (= S9) 'and the information recorder of the new peripheral device 76 to the predetermined substrate. The established information is recorded on the part (step sl〇). After the absence, the G-position 72 is placed at the processing line of the processing station (p/s) 16 of the process line B. The starting point of the developing unit (DEV) 54 of the "2" ▲ path transport path 64. If yes, the substrate G is moved to the second horizontal process conveyance material and advances to the downstream side of the process line B. - Start the face unit (DEV) 54 towel, and the substrate ^ is subjected to development, rinsing, drying, etc. during horizontal flow conveyance. Development Processing (Step S11) The substrate G that has been subjected to the development processing by the developing unit (DEV) 54 is grasped and transported along the second level, and the passage 64 sequentially passes through the third heat treatment unit 66 and the inspection unit (AP) 60. In the third heat treatment portion 66, the substrate crucible is first sent to the post-exposure baking unit (POST-BAKE) 56 for exposure and post-baking, and is used as a heat treatment after the development treatment (step sp. The post-exposure roasting can light the substrate G Remaining _ shadow liquid or cleaning solution is removed, and the adhesion of the photoresist pattern on the substrate is strengthened. Secondly, the cooling unit (COL) 58 cools the substrate G to the substrate temperature set by the system (step S13). Single-turn (AP) 60 performs non-contact line width inspection or film thickness on the photoresist pattern on the substrate G The processing unit (OUT PASS) 62 receives the substrate G that has been processed through all the steps of the second horizontal flow path 64 and transmits it to the transport mechanism 22 of the cassette station (c/s) 14. On the side of the box station (c/s) i4, the transport mechanism 22 accommodates the processed substrates that have been blown out from the unloading unit (out PASS) 6 into one (usually the original) cassette c ( Step Si) In the coating and developing treatment system 10, the present invention is applicable to a photoresist surface treatment unit (VD) 461 in the coating processing unit 30. Hereinafter, the coating processing unit 30 will be described in detail with reference to FIGS. 3 to 5. FIG. 5(4) Processing list of the photoresist processing surface treatment unit (VD) 46 in the plan view of the entire structure of the coating processing unit 3 of the embodiment. Part of the role of the 46th part of the organization 1 1 configuration t 'Photoresist coating unit (COT) 44, with injuries: floating treatment table 80, moving 27 ΐ process handling path 3' D - part or - health The substrate S is updated with a surface nozzle update portion 86' which is provided with a plurality of gases on the surface of the 8G surface during the coating process. The perforating hole 88 can be urged upward, and the substrate G is empty* at a certain height from the surface of the processing table. The pepper I transport mechanism 82' has a processing table 8G and extends in the direction of the cymbal - 90Α, 90Β, · sliding portion 92, which can move along the same; a substrate holding member (not shown) such as an adsorption pad, which is provided on the main body 92 to absorb the two end portions of the substrate G, and to mount the substrate g The processing unit is held in the processing unit; and the moving mechanism (not shown) is moved forward, and the sliding portion % is moved in the conveying direction 'toward' to transport the substrate G on the processing table 80. The photoresist nozzle 84 is placed on the processing table 8 member 96 above the processing table 8A. The device is provided with a processing unit. 13 200837514 as a preparation for the implementation of the coating process; helium gas spray == = structure 102 'which is used to remove the adhesion to the photoresist nozzle here's description of the photoresist coating unit (COT) 44 section of the second heat treatment part 28 (Figure i) For example, the transport unit that is transported by the scroll wheel can be placed on the front end side of the processing unit 8G, and the substrate G is received. The substrate G is subjected to gas pressure = gas (air) pressure on the processing table 80, and is maintained to be approximately accommodative.
方向(X方向)移動基板，當基板 =阻喷嘴84向基板G表_帶狀光阻R ===板G:面上形成光阻R覆膜。= 8〇i 考:f ’’、後亦藉由滑動部92被空浮運送在處理台 104 Γνττ^^η理過的基板0像上述那樣送5彳光阻表面處理單元 下一片‘ϋ又'動„到處理台80前端側的搬入部以接收 合從涂^ ，、㈣嘴84完成1次或複數次塗布處理後， 料“』贿行喷嘴洗 線上ff不的’在光阻塗布單元(COT)44之處理台80的延長 份或-個區^的平流程搬運通路34(圖〇之一部 書ϋ本阳本& ^滾t搬運通路iu4。該滾輪搬運通路104 5縱斷或 為止。、处理單元(VD)46，並延續到第2熱處理部32(圖1) 在光阻表面處理單元(VD)46中’用來對滾輪搬運通路崩上 14 200837514 水平流動搬運的基板G表面(被處理面)實施本發明 理的各種氣體吹送部106、108、11〇沿滾輪搬運通 】= 方向(X;方向)以多段(圖示之例為3段)方式配置。、路104朝搬運 更詳細來說，如圖4所示的，在光阻表面處理 外殼112内’於入口附近配置了乾燥用氣體吹送部鳩，= 配置了第1化學液成分氣體吹送部1〇8，於出口附近了中』^ 化學液成分氣體吹送部110。 ' 了弟2 乾_氣體吹送部觸包含長形喷射噴嘴m與 ，一者隔著氣體引導板118在滾輪搬運通路1〇4上 組。在此’喷射喷嘴m配置在比吸入口 u 運^^ 方向)之下游側的位置。喷射喷嘴114的吐出 ，上之基板G間隔既定距離(例如5〜15並 ^ ^ n的方向(Y方向)延伸成狹縫狀。吸人σ 1Η的+吐出口平行而延伸成狹缝狀。 -育射育鳴 育射贺鳴114以及吸入口 116會分別在滚 之基板G通過其正下方的時候動作:上 =22經過氣體供給管124將乾燥用空氣A,導：二， ’破¥入的乾燥用空氣A1通過喷嘴内 由缝 Ϊ ^ ，繼剛的方^ 部126連、雨άτ；/過排乳官128與排氣泵或排氣風扇内藏的排氣 130 化學液成分氣體吹额也·地包含長形噴射嗔嘴 導板G ，，二f在滾輪搬運通路104上方隔著氣體引 f 置成一在此，贺射喷嘴13〇配置在比吸入口 132 以==:成=~狀。吸:) 15 200837514 入Γτ2 ϋ學液成分氣體吹送部1G8中，喷射喷嘴13G以及吸 ㈣㈣ί'分！11在滾輪搬運通路1G4上之基板G通過其正下方 136以及細來說，空氣供給部120、化學液蒸氣產生部 B導入過氣體供給f 140將含有化學液成分的空氣 喈1内的7,13。，被導人的含有化學液成分的空氣Βι通過嘴 纟狹縫紐ώ吨正下絲板G雜定壓力、 umt流的方式仙。吸入口132，透過排氣管144與 搬=◦包= ϊί:ΐϊΐ 在此’喷射喷嘴146配置在比吸入口148 方向)之下游侧的位置，喷射喷嘴146的吐出 搬運ϋ Γ〇4^^^4上之基板G間隔既定距離並朝横斷滾輪 向)延伸成狹縫狀。吸人口 148也_ 口化學液成分氣體吹送部110中，喷射噴嘴146以及吸入 古沾幻也㈤/刀別在滚輪搬運通路104上之基板G通過兩噴嘴正下 iHf、動作。空氣供給部12(3、化學液蒸氣產生部136、、加孰哭 2^及钱機154經職體供給f 156 5 狹驗㈣靖正下該板g崎定壓力' 均層流的方式修狀σ 148透過排錄⑸連通 42 ’可狀贼吹到基板G表面並㈣在氣體引 蛉板15f下方間隔的含有化學液成分的空氣B2。 ” …給部12G具備顧11或泵等構件，以供給乾燥清淨的 =儲ill蒸氣產生部136，雖省略其圖示，惟仍具備：儲存槽， /、諸存/、有與光阻反應形成變質層(硬固層)之性質的化學液(例 16 200837514 如顯影液、HMDS);以及氮氣供給部，其對設置在該化學液 槽底部^起泡器供給作為運載氣體之用的氮氣，化學液氣化溶^ 該起/包為所產生的乳氣氣泡’以產生化學液蒸氣。加熱器Η】， 了將含有化學液成分空氣B2加熱到既定溫度而安裝在氣體供給二 156上，該含有化學液成分空氣&會供應給第2化學液成分 吹送部110的喷射喷嘴146。送風機138、154係由例如吹風突 風扇所構成的，可將空氣供給部120的空氣與化學液墓氣產 136的化學液蒸氣送入進氣侧，並從出氣側分別吐出昇壓 ϋ 化學液成分的空氣民、Β2。 在外设112頂部適當處所上安裝了可降流供給清淨空氣的風 扇過濾态單元(FFU)160。又，底壁或底床延伸設置在滾輪搬運通 路1〇4下方，在適當的1個或數個處所設置排氣口 162，各排氣口 162透過排氣管丨64連通到排氣泵或排氣風扇内藏的排氣部166。 各氣體吹送部1〇6、108、110所洩漏之氣體被捲入頂板降流的清 淨空氣内，然後從底床的排氣口 162排出到室外去。 、、在外殼112入口附近設有接近開關或位置感應器168，用來檢 測滾輪搬運通路104上基板G進入該光阻表面處理單元(Dv)46内 的時點。該位置感應器168的輸出信號會送到控制光阻表面處理 單元(DV)46内各部位以及全體動作的控制器(未經圖示)去。 棒狀滾輪170在滾輪搬運通路1〇4上沿搬運方向(χ方向)以一 定間距水平並排配置。圖示雖省略，惟各滾輪17〇受到固定於例 如框架專構件上的軸承的支持而能夠旋轉，並透過齒輪機構或是 傳送帶機構等的傳動機構連接到電動馬達等搬運驅動源。 •其次’説明該光阻表面處理單元(VD)46的作用。 如上所述’在上游側隣近之光阻塗布單元(c〇T)44塗布過光 阻R的基板G，從處理台80之空浮搬運通路移到滾輪搬運通路 104上’並在水平流動之滾輪搬運下進入光阻表面處理單元(VD)46 的外殼112内。外殼112内，在滾輪搬運通路1〇4上受滾輪搬運 而以一定速度移動的基板G，最初通過乾燥用氣體吹送部時， 17 200837514 。如是上 光阻R 層流碰到基板G ’基板G最上層的 又到乾^用工軋A1的風壓的物理力量作用，如圖5所示 的變;端在光_表面形成非常薄(祕以下） ^又貝層或疋其刖置膜(硬固層)RA。又，在圖5 土底m 172係微影時的被加工膜(電路圖案形成對象膜二 、 上芙C ’二過$乾無，氣體吹送部106之後，在滾輪搬運通路104 汾ii 3接者通過第1化學液成分氣體吹送部⑽，在此上方喷 式喷*含有化學液成分的空氣仏。像這 光阻R表層與光阻主成分樹脂化學反應，使樹脂交 ‘壓力板”的紐以，會對光阻μ面施加 所^力Ϊί同&也有乾燥的效果。像這樣，如圖5 斤不的，基板G從丽端向後端在光阻R表面形 (1000A以上)的變質層哗。 ㈣域貝貝上有思義 2基板^通過後段之第2化學液成分氣體吹送部11〇 ;B I^ii46亦以帶狀層流方式喷出含有化學液成分的 像攻樣s有化學液成分的妓&其層流反覆碰到基板G ^的光後’化學液成分通過已經形成在植R表層的變質層 y ”光阻主成分樹脂化學反應，使樹脂交聯。像這樣，如圖5 所不的’基板G從前端向後端在光阻R表面彡 =，;;ίΐ長獅2。此時，在第2化上id二 〇中’為了有效促進變質層RB成長’而利用如上所述之加熱器 I52使含有化學液成分的空氣Β2昇溫。將這個目的一並考進 的話，宜更進-步提高含有化學液成分的空氣民的風壓，云 像這樣，基板G在滾輪搬運通路104上通過光阻表面處理置 元(VD)46期間，於多段氣體吹送部1〇6、1〇8、π〇接受如上之 多階段光阻表面處理，便能在基板G全部光㈣表面上 層RB ’其膜厚與實施減壓乾燥時相同(例如約3〇〇〇入卜藉此，在 18 200837514 ί 巾:使基板0在麟處理Μ__ΒΑΚΕ)48 ==部分流動不均句，也能藉由硬性變質 ΐ’光阻尺變得不料發生膜厚不均勻的情 況。如疋便忐提高電路圖案的線寬精密度。 士 ’由於該實施形態之光阻表面處理單元(VD)46可在 ϊϊ上所塗布的光阻^欠送空氣ai層流使光阻表面 二/ /"V並接著以層流方式反覆吹送含有化學液成分的 工虱Br B2以在光阻表面將變質層仙形成 f 0 χ , 谁P /人/㈣以及光喊面處理的掃描全部均以滾輪搬運 丁。W ’便不需要搬運機械裝置，基板也 卸載時發生位置偏差或碰撞破損等tThe substrate is moved in the direction (X direction), and when the substrate = the resisting nozzle 84 forms a photoresist R on the surface of the substrate G-band photoresist R === plate G:. = 8〇i test: f '', and then the substrate 0 that has been transported by the sliding portion 92 on the processing table 104 by the sliding portion 92 is sent to the lower surface of the photoresist surface treatment unit as described above. 'Moving' to the loading portion on the front end side of the processing table 80 to receive the splicing and/or (four) nozzles 84 once or a plurality of coating processes, and then "snap the nozzle washing line ff not in the photoresist coating unit" (COT) 44, the extension of the processing station 80 or the flat flow handling path 34 of the area (the one part of the book is ϋ本本本本& ^Rolling conveyance path iu4. The roller handling path 104 5 is longitudinally broken Or, the processing unit (VD) 46, and continues to the second heat treatment portion 32 (FIG. 1) in the photoresist surface treatment unit (VD) 46 'used to collapse the roller transport path 14 200837514 horizontal flow transport substrate The G surface (processed surface) is configured such that the various gas blowing portions 106, 108, and 11 that carry out the present invention are disposed along the roller, and the direction (X; direction) is arranged in a plurality of stages (the example is three stages in the illustrated example). In more detail, as shown in FIG. 4, in the photoresist surface treatment casing 112, a drying gas is disposed near the inlet. In the delivery unit, the first chemical liquid component gas blowing unit 1〇8 is disposed, and the chemical liquid component gas blowing unit 110 is located near the outlet. The younger brother 2 dry gas blowing unit includes the long injection nozzle m. One of them is placed on the roller transport path 1〇4 via the gas guide plate 118. Here, the 'injection nozzle m is disposed on the downstream side of the suction port u). When the ejection nozzle 114 is ejected, the upper substrate G is extended by a predetermined distance (for example, a direction of 5 to 15 and a direction (Y direction)), and the + discharge port of the suction σ 1 平行 is parallel and extends in a slit shape. - The brooding and nurturing hoist 114 and the suction port 116 are respectively operated when the substrate G is rolled directly below: the upper air is supplied to the air supply tube 124 through the gas supply pipe 124, and the air is dried. The incoming drying air A1 passes through the nozzle and is connected by the seam Ϊ ^ , which is connected to the square 126, and the rain ά τ; / the over-discharged keeper 128 and the exhaust gas contained in the exhaust pump or the exhaust fan 130 chemical liquid component gas The blower also includes the elongated spray nozzle guide G, and the two f are disposed above the roller transport path 104 via the gas guide f, and the glow nozzle 13 is disposed at the ratio of the suction port 132 by ==: = 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 The substrate G on the roller transport path 1G4 passes through the direct lower surface 136 and, more specifically, the air supply unit 120 and the chemical liquid vapor generation unit B introduce the gas supply f 140 to the air 喈1 containing the chemical liquid component. 13. The air that contains the chemical liquid component is passed through the mouth, the slit, the ώ 正 正 正 正 正 正 正 。 杂 杂 。 。 。 。 。 。 。 。 。 。 。 The suction port 132 passes through the exhaust pipe 144 and the conveyance nozzle ϊ ΐϊΐ ΐϊΐ ΐϊΐ ΐϊΐ ΐϊΐ ΐϊΐ ΐϊΐ ΐϊΐ ΐϊΐ ΐϊΐ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ The substrate G on ^4 is spaced apart by a predetermined distance and extends toward the transverse roller to form a slit shape. In the squirting liquid 148, the ejector chemical liquid component gas blowing unit 110, the injection nozzle 146, and the substrate G that is sucked in the roller transport path 104 are operated by the two nozzles. Air supply unit 12 (3, chemical liquid vapor generation unit 136, 孰 孰 cry 2 ^ and money machine 154 through the body supply f 156 5 narrow test (four) Jing Zheng under the plate g akising pressure ' stratified flow mode σ 148 is connected to the surface of the substrate G through the recording (5), and (4) the air B2 containing the chemical liquid component which is spaced below the gas squeezing plate 15f. The ... 12G has a member such as a pump 11 or a pump, The squirrel-steam generating unit 136, which is supplied to the dry and clean, is not shown, but has a storage tank, and/or a chemical liquid having a property of reacting with a photoresist to form a modified layer (hard layer). Example 16 200837514, such as a developing solution, HMDS); and a nitrogen supply unit, which supplies nitrogen gas as a carrier gas to a bubbler provided at the bottom of the chemical liquid tank, and the chemical liquid is vaporized and dissolved. The milk bubble "to generate chemical vapor". The heater Η], the chemical liquid component air B2 is heated to a predetermined temperature and installed on the gas supply 2, 156, and the chemical liquid component air & will be supplied to the second Injection nozzle 146 of chemical liquid component blowing unit 110. Air blowers 138, 154 For example, the air supply unit 120 and the chemical liquid vapor of the chemical liquid tomb gas 136 can be sent to the intake side, and the air blast of the ϋ chemical liquid component can be separately discharged from the air outlet side. , Β 2. A fan filter unit (FFU) 160 that can supply the clean air to the downflow is installed on a suitable space at the top of the peripheral unit 112. Further, the bottom wall or the bottom bed extends below the roller transport path 1〇4, at the appropriate 1 The exhaust port 162 is provided in one or a plurality of places, and each of the exhaust ports 162 is communicated to the exhaust unit 166 in the exhaust pump or the exhaust fan through the exhaust pipe 64. Each of the gas blowing units 1〇6, 108, 110 The leaked gas is taken into the clean air of the downflow of the top plate and then discharged to the outside from the exhaust port 162 of the bottom bed. A proximity switch or position sensor 168 is provided near the entrance of the outer casing 112 for detecting the roller. The substrate G on the transport path 104 enters the time in the photoresist surface treatment unit (Dv) 46. The output signal of the position sensor 168 is sent to the control photoresist surface treatment unit (DV) 46 for various parts and control of the overall operation. Go (not shown). The roller 170 is horizontally arranged at a predetermined pitch in the conveyance direction (χ direction) on the roller conveyance path 1〇4. Although not shown in the drawings, each roller 17〇 is rotatably supported by a bearing fixed to, for example, a frame member. And connected to a transport drive source such as an electric motor through a gear mechanism such as a gear mechanism or a belt mechanism. • Next, the function of the photoresist surface treatment unit (VD) 46 is explained. As described above, the light adjacent to the upstream side The resist coating unit (c〇T) 44 is coated with the substrate G of the photoresist R, and is moved from the floating transport path of the processing station 80 to the roller transport path 104 and enters the photoresist surface treatment unit under the horizontal flow of the roller ( Inside the housing 112 of the VD) 46. In the casing 112, the substrate G that is transported by the roller at the roller transport path 1〇4 and moves at a constant speed is first passed through the drying gas blowing unit, 17 200837514. For example, the upper resistor R laminar flow hits the uppermost layer of the substrate G' substrate G and the physical force of the wind pressure of the dry rolled A1, as shown in FIG. 5; the end is formed very thin on the surface of the light_ The following) ^ The shell layer or the 疋 刖 film (hard layer) RA. Further, in the case of the film m of the earth bottom m 172 system, the film to be processed (the circuit pattern forming target film 2, the upper film C' is not dried, the gas blowing portion 106 is connected to the roller conveying path 104 汾 ii 3 The first chemical liquid component gas blowing unit (10) sprays the air enthalpy containing the chemical liquid component thereon. The surface layer of the photoresist R reacts with the photoresist main component resin to cause the resin to pass through the 'pressure plate'. New Zealand, will exert the force on the photoresist surface, and also have a drying effect. Like this, as shown in Figure 5, the substrate G is shaped from the Li end to the back end on the surface of the photoresist R (1000A or more). (4) The domain 2 has a second substrate; the second chemical liquid component gas blowing unit 11〇 passes through the rear stage; BI^ii46 also ejects a sample containing chemical liquid components in a laminar flow pattern. After the laminar flow of the chemical composition, the laminar flow repeatedly hits the light of the substrate G^, and the chemical liquid component chemically reacts through the resistive layer y which has been formed on the surface layer of the R layer to crosslink the resin. Thus, as shown in FIG. 5, 'the substrate G is on the surface of the photoresist R from the front end to the rear end ,=;; Lion 2. At this time, in the second id 〇, 'in order to effectively promote the growth of the metamorphic layer RB', the heater I52 as described above is used to raise the temperature of the air 含有2 containing the chemical liquid component. In this case, it is preferable to further increase the wind pressure of the air person containing the chemical liquid component, and the cloud G passes through the photoresist surface treatment unit (VD) 46 on the roller transport path 104 in the multi-stage gas blowing portion 1 〇6,1〇8, π〇 accept the multi-stage photoresist surface treatment as described above, and the upper layer RB′ of the entire light (4) surface of the substrate G can be the same as that when the vacuum drying is performed (for example, about 3 〇〇〇 In this way, at 18 200837514 ί towel: the substrate 0 is processed in the Μ __ΒΑΚΕ) 48 == partial flow unevenness sentence, and the film thickness unevenness can be caused by the hard deterioration ΐ 'the photoresist ruler. The note improves the line width precision of the circuit pattern. The photoresist surface treatment unit (VD) 46 of this embodiment can apply a photoresist on the crucible to bleed the air ai laminar flow to make the photoresist surface two / / "V and then repeatedly blowing the chemical liquid component in a laminar flow The work piece Br B2 forms a f 0 χ on the surface of the resist, and the scans of the P/person/(4) and the light shouting surface are all carried by the roller. W' does not need to carry the mechanical device, and the substrate is also unloaded. When positional deviation or collision breakage occurs, etc.
上的光阻也不會有訂轉印痕跡的顧慮。早（D)46内基板G 發^交佳實施形態説明，惟本發明並非僅限於上 这貝而已，在該技術思想顧内可有各種不同的變化形態。 氕低某-定程度的作用(變質層形成)效果。又'二2置; ΐιίίίί^^110其中一個而僅設一娜皆段的化學液成分 ί的ϋ也以。再者’各氣體吹送部106、108、no所使 if取代°又’亦可使用化學液噴霧產生裝置 取代液紐產生和6 ’將鱗液儒#作化學液成分。 圖不雖省略，惟亦可將滾輪搬運通路104 路等其他水平細運通路。== ^運通路時，在上游側隣近之光阻塗布單元(C 4 口,草- ί,Ι台⑽以及基機韻構82可兼作為光阻細處理單ΐ ()46内的基板移動機構之用。又，圖示雖省略，惟亦可使氣體 19 200837514 多1^6乃1=位110的喷嘴朝搬運方向(x方向)或垂直方向(z t發明之光阻表面處理法，一般的可適用於正型 亦可適用於負型光阻液。 從m 你甘it明之被處理基板並不限SLCD肖的玻璃基板，亦可使用 ^丨:二面面板顯不器用基板、半導體晶圓、CD基板、光罩、印 it。作為減壓乾燥處理對象的塗布液也不限於光阻液，也 ” k於例如層間絶緣材料、介電材料、配線材料等的處理液。 圖式簡單說明】 圖 圖1係表示本發明可適用的塗布顯影處理系統其構造的俯視 = ϊ、ί示上述塗布顯影處理系統之處理順序的流程圖。 Hi不在貫施形態中塗布處理部之全體構造的俯視圖。 示施形態中光阻表面處理單元之構造賴視圖。 用的二附謝光阻表面處理單元其主要部位的作 【主要元件符號說明】 10塗布顯影處理系統 12曝光裝置 14匣盒站(c/S) 16處理站(p/s) 18介面站(ι/ρ) 2〇匣盒處理台 22搬運機構 22a搬運臂 24搬入單元(INPASS) 20 200837514 26洗淨處理部 28第1熱處理部 30塗布處理部 32第2熱處理部 34第1水平流程搬運通路 36準分子UV照射單元(E-UV) 38揉擦洗淨單元(SCR) 40附著單元(AD) 42冷卻單元(COL) 44光阻塗布單元(COT) 〔 46光阻表面處理單元(VD) 48預烤處理單元(PRE-BAKE) 50冷卻單元(COL) 52傳送單元(PASS) 54顯影單元(DEV) 1 56曝後烤單元(POST-BAKE) 58冷卻單元(COL) 60檢査單元(AP) 62搬出單元(OUT-PASS) ( 64第2水平流程搬運通路 66第3熱處理部 68辅助搬運空間 70穿梭裝置 72搬運裝置 74旋轉處理台(R/S) 76周邊裝置 80浮上式處理台 82基板搬運機構 84光阻喷嘴 21 200837514 86喷嘴更新部 88氣體喷射孔 90A、90B引導轨 92滑動部 94喷嘴支持構件 96支柱構件 98準備處理部 100蒸氣喷嘴 102喷嘴洗淨機構 104滚輪搬運通路 106乾燥用氣體吹送部 108第1化學液成分氣體吹送部 110第2化學液成分氣體吹送部 112外殼 120空氣供給部 122、138、154 送風機 114、130、146喷射喷嘴 116、132、148 吸入口 118、134、150氣體引導板 124、140、156氣體供給管 126、142、166 排氣部 128、144、158、164排氣管 114a、130a、146a 多孔板 136化學液蒸氣產生部 152加熱器 160風扇過濾器單元(FFU) 162排氣口 168位置感應器 170滾輪 22 200837514 172基底膜 A製程產線 B製程產線 A1空氣There is no concern about the transfer marks on the photoresist. The substrate (G) in the early (D) 46 is described as a preferred embodiment, but the present invention is not limited to the above, and various variations can be made in the technical idea. Depreciate the effect of a certain degree (deterioration layer formation). Also, 'two 2 sets; ΐι ί ί ^ ^ 110 one of them and only one narration of the chemical liquid composition ί ϋ also. Further, 'the gas blowing portions 106, 108, and no can be replaced by a chemical liquid spray generating device instead of a liquid liquid generating device and 6' with a liquid chemical composition. Although not shown in the drawings, other horizontal fine transport paths such as the roller transport path 104 may be used. == ^ When the path is transported, the photoresist coating unit (C 4 port, grass- Ι, Ι台(10), and base frame 82 adjacent to the upstream side can also serve as the substrate in the photoresist thinning unit ()46. For the purpose of the moving mechanism, the illustration is omitted, but it is also possible to make the nozzle of the gas 19 200837514 more than 1^6 or 1 = position 110 in the conveying direction (x direction) or the vertical direction (zt invention photoresist surface treatment method, Generally, it can be applied to positive type or negative type resistive liquid. From m, you can treat the substrate to be processed without any SLCD glass substrate, and you can also use the substrate: semiconductor crystal for two-sided panel display. The coating liquid to be subjected to the vacuum drying treatment is not limited to the photoresist liquid, and is also a processing liquid such as an interlayer insulating material, a dielectric material, or a wiring material. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing the structure of a coating and developing treatment system to which the present invention is applied, in a plan view of the coating and developing treatment system. Hi is not in the overall configuration of the coating processing unit. Top view. Structure of photoresist surface treatment unit in display form The view of the main part of the photoresist surface treatment unit is used [main component symbol description] 10 coating development processing system 12 exposure device 14 cassette station (c / S) 16 processing station (p / s) 18 interface Station (ι/ρ) 2 cassette processing table 22 transport mechanism 22a transport arm 24 loading unit (INPASS) 20 200837514 26 cleaning processing unit 28 first heat treatment unit 30 coating processing unit 32 second heat treatment unit 34 first horizontal flow Transport path 36 excimer UV irradiation unit (E-UV) 38揉 scrubbing unit (SCR) 40 attachment unit (AD) 42 cooling unit (COL) 44 photoresist coating unit (COT) [46 photoresist surface treatment unit ( VD) 48 pre-bake processing unit (PRE-BAKE) 50 cooling unit (COL) 52 transfer unit (PASS) 54 developing unit (DEV) 1 56 post-bake unit (POST-BAKE) 58 cooling unit (COL) 60 inspection unit (AP) 62 carry-out unit (OUT-PASS) (64 second horizontal flow conveyance path 66 third heat treatment unit 68 auxiliary conveyance space 70 shuttle device 72 conveyance device 74 rotation processing table (R/S) 76 peripheral device 80 floating treatment Table 82 substrate transport mechanism 84 photoresist nozzle 21 200837514 86 nozzle update unit 88 gas injection holes 90A, 90B guide 92 sliding portion 94 nozzle supporting member 96 strut member 98 preparation processing unit 100 steam nozzle 102 nozzle cleaning mechanism 104 roller transport path 106 drying gas blowing unit 108 first chemical liquid component gas blowing unit 110 second chemical liquid component gas blowing unit 112 outer casing 120 air supply unit 122, 138, 154 air blowers 114, 130, 146 injection nozzles 116, 132, 148 suction ports 118, 134, 150 gas guide plates 124, 140, 156 gas supply pipes 126, 142, 166 exhaust 128, 144, 158, 164 exhaust pipe 114a, 130a, 146a perforated plate 136 chemical liquid vapor generating portion 152 heater 160 fan filter unit (FFU) 162 exhaust port 168 position sensor 170 roller 22 200837514 172 base film A Process production line B process production line A1 air
Bi、B2含有化學液成分的空氣 C匣盒 G未處理基板 R光阻 RA前置膜(硬固層） RB、RBi、RB2 變質層 ΧΥΖ0方向 S1〜S14步驟 23Bi, B2 Air containing chemical liquid component C匣Box G Untreated substrate R photoresist RA pre-film (hard layer) RB, RBi, RB2 Metamorphic layer ΧΥΖ0 direction S1~S14 Step 23