TW200833859A - Ganged scanning of multiple magnetrons, especially two level folded magnetrons - Google Patents

Ganged scanning of multiple magnetrons, especially two level folded magnetrons

Info

Publication number
TW200833859A
TW200833859A TW096128454A TW96128454A TW200833859A TW 200833859 A TW200833859 A TW 200833859A TW 096128454 A TW096128454 A TW 096128454A TW 96128454 A TW96128454 A TW 96128454A TW 200833859 A TW200833859 A TW 200833859A
Authority
TW
Taiwan
Prior art keywords
magnetrons
magnetron
target
strip
folded
Prior art date
Application number
TW096128454A
Other languages
English (en)
Other versions
TWI359203B (en
Inventor
Makoto Inagawa
Hien-Minh Huule
Akihiro Hosokawa
Bradley O Stimson
John M White
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200833859A publication Critical patent/TW200833859A/zh
Application granted granted Critical
Publication of TWI359203B publication Critical patent/TWI359203B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets
TW096128454A 2006-08-04 2007-08-02 Ganged scanning of multiple magnetrons, especially TWI359203B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US83568106P 2006-08-04 2006-08-04
US83567106P 2006-08-04 2006-08-04

Publications (2)

Publication Number Publication Date
TW200833859A true TW200833859A (en) 2008-08-16
TWI359203B TWI359203B (en) 2012-03-01

Family

ID=39173617

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096128454A TWI359203B (en) 2006-08-04 2007-08-02 Ganged scanning of multiple magnetrons, especially

Country Status (4)

Country Link
JP (2) JP5243745B2 (zh)
KR (1) KR100910673B1 (zh)
CN (1) CN101117706B (zh)
TW (1) TWI359203B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5181759B2 (ja) * 2008-03-21 2013-04-10 ソニー株式会社 Ｉｃカード
CN116092899B (zh) * 2023-01-16 2024-01-09 深圳市矩阵多元科技有限公司 用于pvd平面靶的扫描磁控管装置与磁控溅射设备

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5920469A (ja) * 1982-07-26 1984-02-02 Hitachi Ltd プレ−ナマグネトロン型スパツタ装置
US4415427A (en) * 1982-09-30 1983-11-15 Gte Products Corporation Thin film deposition by sputtering
JPS6134177A (ja) * 1984-07-25 1986-02-18 Tokuda Seisakusho Ltd マグネツト駆動装置
JPS6174339A (ja) * 1984-09-19 1986-04-16 Hitachi Ltd プラズマ処理装置
JPH02298266A (ja) * 1989-05-11 1990-12-10 Fujitsu Ltd マグネトロンスパッタリング装置
KR950000906B1 (ko) * 1991-08-02 1995-02-03 니찌덴 아넬바 가부시기가이샤 스퍼터링장치
JPH05339726A (ja) * 1992-06-11 1993-12-21 Matsushita Electric Ind Co Ltd マグネトロンスパッタ装置
JPH06207272A (ja) * 1993-01-08 1994-07-26 Shin Etsu Chem Co Ltd マグネトロンプラズマ用永久磁石磁気回路
US5407551A (en) * 1993-07-13 1995-04-18 The Boc Group, Inc. Planar magnetron sputtering apparatus
US5855744A (en) * 1996-07-19 1999-01-05 Applied Komatsu Technology, Inc. Non-planar magnet tracking during magnetron sputtering
US5876574A (en) * 1997-04-23 1999-03-02 Applied Materials, Inc. Magnet design for a sputtering chamber
US5795451A (en) * 1997-06-12 1998-08-18 Read-Rite Corporation Sputtering apparatus with a rotating magnet array
US6183614B1 (en) * 1999-02-12 2001-02-06 Applied Materials, Inc. Rotating sputter magnetron assembly
JP2001348663A (ja) * 2000-06-08 2001-12-18 Sony Corp スパッタリング装置
KR100539815B1 (ko) * 2002-12-30 2006-01-11 엘지전자 주식회사 마그네트론의 가스켓 링 결합구조
US20050103620A1 (en) * 2003-11-19 2005-05-19 Zond, Inc. Plasma source with segmented magnetron cathode
US7513982B2 (en) * 2004-01-07 2009-04-07 Applied Materials, Inc. Two dimensional magnetron scanning for flat panel sputtering
DE102004007813A1 (de) * 2004-02-18 2005-09-08 Applied Films Gmbh & Co. Kg Sputtervorrichtung mit einem Magnetron und einem Target
US7018515B2 (en) * 2004-03-24 2006-03-28 Applied Materials, Inc. Selectable dual position magnetron

Also Published As

Publication number Publication date
JP5243745B2 (ja) 2013-07-24
TWI359203B (en) 2012-03-01
JP5771638B2 (ja) 2015-09-02
JP2013127125A (ja) 2013-06-27
KR20080012758A (ko) 2008-02-12
CN101117706B (zh) 2012-09-19
JP2008038252A (ja) 2008-02-21
KR100910673B1 (ko) 2009-08-04
CN101117706A (zh) 2008-02-06

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