JP5243745B2 - 複数マグネトロン、特に二段型褶曲マグネトロンの連動走査 - Google Patents
複数マグネトロン、特に二段型褶曲マグネトロンの連動走査 Download PDFInfo
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- JP5243745B2 JP5243745B2 JP2007201415A JP2007201415A JP5243745B2 JP 5243745 B2 JP5243745 B2 JP 5243745B2 JP 2007201415 A JP2007201415 A JP 2007201415A JP 2007201415 A JP2007201415 A JP 2007201415A JP 5243745 B2 JP5243745 B2 JP 5243745B2
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- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 description 19
- 239000010410 layer Substances 0.000 description 12
- 230000007246 mechanism Effects 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000009826 distribution Methods 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 238000002294 plasma sputter deposition Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004323 axial length Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000003351 stiffener Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000000153 supplemental effect Effects 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3455—Movable magnets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Description
Claims (9)
- 反対の極性の内側磁極を取り巻き、閉鎖経路状に延びる間隙により内側磁極とは隔てられているある極性の外側磁極を含む二段式褶曲型蛇行マグネトロンであり、経路がその先頭部から尾部まで褶曲パターンに沿って延びる2つの概して平行な部分からなり、褶曲パターンが先頭部から第1の180°コーナー部まで延びる第1直線部と、第1の180°コーナー部から第2の180°コーナー部まで延びる第2直線部と、第2の180°コーナー部から尾部まで延びる第3直線部からなり、第1及び第3直線部が第2直線部に平行かつ沿って延びているマグネトロン。
- 第1及び第2の180°コーナー部のそれぞれは、磁極の1つのそれぞれの鋭形部周囲に配置され、鋭形部がその先端部から外側方向に向かって広がった後に片方の磁極の直線部に対して内側方向に末狭まりする涙滴型を有する請求項1記載の褶曲型マグネトロン。
- 涙滴型の内部部分には磁石が集中していないが、涙滴型の周縁部には磁石が集中している請求項2記載のマグネトロン。
- 180°コーナー部のそれぞれが、一方の磁極のそれぞれの凸部ともう一方の磁極のそれぞれの凹部との間に配置され、各コーナー部に隣接する一方の磁極の磁気強度の線密度は、コーナーに隣接するもう一方の磁極の磁気強度の線密度よりも大きい請求項1記載の褶曲型マグネトロン。
- 180°コーナー部のそれぞれが、一方の磁極のそれぞれの凸部ともう一方の磁極のそれぞれの凹部との間に配置され、得られるプラズマ軌道の中心線を凸部から凹部方向に移動させる手段を含む請求項1記載の褶曲型マグネトロン。
- 180°コーナー部のそれぞれが、一方の磁極のそれぞれの凸部ともう一方の磁極のそれぞれの凹部との間に配置され、直線部を規定する第1磁気強度の磁石と、少なくとも部分的に凸状コーナー部を規定する第2のより強い磁気強度の磁石とを更に備える請求項1記載の褶曲マグネトロン。
- 第1磁気強度の磁石が凹状コーナー部を規定する請求項6記載のマグネトロン。
- 内側磁極内に配置される第1磁極性の第1磁石と、第1磁極性とは反対の第2磁極性であり、外側磁極内に配置される第2磁石とを含むマグネトロンであり、第1及び第2磁石が直線部分では実質的に均一に配置され、間隙の辺に沿って配置された一又は二列の磁石を有する均一な配置と比較して、180°コーナー部では不均一に配置される請求項1記載のマグネトロン。
- 間隙に沿って配置された一又は二列の磁石を有する配列と比較して、180°コーナー部において、間隙の凹部側より凸側により多くの磁石が配置されている請求項8記載のマグネトロン。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US83567106P | 2006-08-04 | 2006-08-04 | |
US83568106P | 2006-08-04 | 2006-08-04 | |
US60/835,681 | 2006-08-04 | ||
US60/835,671 | 2006-08-04 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013040856A Division JP5771638B2 (ja) | 2006-08-04 | 2013-03-01 | 複数マグネトロン、特に二段型褶曲マグネトロンの連動走査 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008038252A JP2008038252A (ja) | 2008-02-21 |
JP5243745B2 true JP5243745B2 (ja) | 2013-07-24 |
Family
ID=39173617
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007201415A Active JP5243745B2 (ja) | 2006-08-04 | 2007-08-02 | 複数マグネトロン、特に二段型褶曲マグネトロンの連動走査 |
JP2013040856A Expired - Fee Related JP5771638B2 (ja) | 2006-08-04 | 2013-03-01 | 複数マグネトロン、特に二段型褶曲マグネトロンの連動走査 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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JP2013040856A Expired - Fee Related JP5771638B2 (ja) | 2006-08-04 | 2013-03-01 | 複数マグネトロン、特に二段型褶曲マグネトロンの連動走査 |
Country Status (4)
Country | Link |
---|---|
JP (2) | JP5243745B2 (ja) |
KR (1) | KR100910673B1 (ja) |
CN (1) | CN101117706B (ja) |
TW (1) | TWI359203B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5181759B2 (ja) * | 2008-03-21 | 2013-04-10 | ソニー株式会社 | Icカード |
CN116092899B (zh) * | 2023-01-16 | 2024-01-09 | 深圳市矩阵多元科技有限公司 | 用于pvd平面靶的扫描磁控管装置与磁控溅射设备 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5920469A (ja) * | 1982-07-26 | 1984-02-02 | Hitachi Ltd | プレ−ナマグネトロン型スパツタ装置 |
US4415427A (en) * | 1982-09-30 | 1983-11-15 | Gte Products Corporation | Thin film deposition by sputtering |
JPS6134177A (ja) * | 1984-07-25 | 1986-02-18 | Tokuda Seisakusho Ltd | マグネツト駆動装置 |
JPS6174339A (ja) * | 1984-09-19 | 1986-04-16 | Hitachi Ltd | プラズマ処理装置 |
JPH02298266A (ja) * | 1989-05-11 | 1990-12-10 | Fujitsu Ltd | マグネトロンスパッタリング装置 |
KR950000906B1 (ko) * | 1991-08-02 | 1995-02-03 | 니찌덴 아넬바 가부시기가이샤 | 스퍼터링장치 |
JPH05339726A (ja) * | 1992-06-11 | 1993-12-21 | Matsushita Electric Ind Co Ltd | マグネトロンスパッタ装置 |
JPH06207272A (ja) * | 1993-01-08 | 1994-07-26 | Shin Etsu Chem Co Ltd | マグネトロンプラズマ用永久磁石磁気回路 |
US5407551A (en) * | 1993-07-13 | 1995-04-18 | The Boc Group, Inc. | Planar magnetron sputtering apparatus |
US5855744A (en) * | 1996-07-19 | 1999-01-05 | Applied Komatsu Technology, Inc. | Non-planar magnet tracking during magnetron sputtering |
US5876574A (en) * | 1997-04-23 | 1999-03-02 | Applied Materials, Inc. | Magnet design for a sputtering chamber |
US5795451A (en) * | 1997-06-12 | 1998-08-18 | Read-Rite Corporation | Sputtering apparatus with a rotating magnet array |
US6183614B1 (en) * | 1999-02-12 | 2001-02-06 | Applied Materials, Inc. | Rotating sputter magnetron assembly |
JP2001348663A (ja) * | 2000-06-08 | 2001-12-18 | Sony Corp | スパッタリング装置 |
KR100539815B1 (ko) * | 2002-12-30 | 2006-01-11 | 엘지전자 주식회사 | 마그네트론의 가스켓 링 결합구조 |
US20050103620A1 (en) * | 2003-11-19 | 2005-05-19 | Zond, Inc. | Plasma source with segmented magnetron cathode |
US7513982B2 (en) * | 2004-01-07 | 2009-04-07 | Applied Materials, Inc. | Two dimensional magnetron scanning for flat panel sputtering |
DE102004007813A1 (de) * | 2004-02-18 | 2005-09-08 | Applied Films Gmbh & Co. Kg | Sputtervorrichtung mit einem Magnetron und einem Target |
US7018515B2 (en) * | 2004-03-24 | 2006-03-28 | Applied Materials, Inc. | Selectable dual position magnetron |
-
2007
- 2007-07-26 KR KR1020070075089A patent/KR100910673B1/ko active IP Right Grant
- 2007-07-27 CN CN2007101376303A patent/CN101117706B/zh active Active
- 2007-08-02 TW TW096128454A patent/TWI359203B/zh active
- 2007-08-02 JP JP2007201415A patent/JP5243745B2/ja active Active
-
2013
- 2013-03-01 JP JP2013040856A patent/JP5771638B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR20080012758A (ko) | 2008-02-12 |
KR100910673B1 (ko) | 2009-08-04 |
JP5771638B2 (ja) | 2015-09-02 |
JP2013127125A (ja) | 2013-06-27 |
TWI359203B (en) | 2012-03-01 |
TW200833859A (en) | 2008-08-16 |
JP2008038252A (ja) | 2008-02-21 |
CN101117706B (zh) | 2012-09-19 |
CN101117706A (zh) | 2008-02-06 |
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