TW200827926A - Photomask blank, method for manufacturing photomask blank, photomask, method for manufacturing photomask, photomask intermediate, and method for transferring pattern - Google Patents
Photomask blank, method for manufacturing photomask blank, photomask, method for manufacturing photomask, photomask intermediate, and method for transferring pattern Download PDFInfo
- Publication number
- TW200827926A TW200827926A TW096134033A TW96134033A TW200827926A TW 200827926 A TW200827926 A TW 200827926A TW 096134033 A TW096134033 A TW 096134033A TW 96134033 A TW96134033 A TW 96134033A TW 200827926 A TW200827926 A TW 200827926A
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- shielding film
- film
- photoresist
- peripheral portion
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
200827926 v 九、發明說明： 【發明所屬之技術領域】 本發明有關於微影技術中用於圖案轉移的光罩基板及 其素材原版的光罩基板及其製造方法，以及光罩中間體及 圖案轉移方法。 【先前技術】200827926 v IX. Description of the Invention: [Technical Field] The present invention relates to a reticle substrate for pattern transfer in lithography, a reticle substrate of the same, and a method of manufacturing the same, and a reticle intermediate and pattern Transfer method. [Prior Art]
以往’在微影技術中使用光罩進行圖案轉移。光罩以 光罩基板作為素材原版而被製造。 光罩基板，例如為在由石英玻璃等構成的透光性基板 上形成有以鉻為主成份的遮光膜而構成。於如上所述的光 罩基板的製造，首先，精密研磨石英玻璃等，而得到透光 性基板（研磨步驟）。其次，於所得的透光性基板的主表面 上，例如利用賤鍍法等，形成以鉻為主成份的遮光膜（成膜 步驟）。 再者，光罩藉由於光罩基板上塗佈光阻膜（塗佈步 ⑹，然後將光阻膜選擇性地曝光（曝光步驟），顯影已曝光 的光阻膜’然後進行钱刻處理，以圖案化遮光膜（㈣處理 步驟）而被製造。 因此，在光罩以及光罩基板任何一個之中，在各個步 ，之間運送的時候等，把持透光性基板的外周部或側面 部。此時，把4^p『— ' ^marginal part to be held by hand or tools]會使得形成於透光性基板的外周部或側面部的遮光 膜因把持而有制落之虞。遮光膜剝落的話，剝離物會成 2130-9l39-PF;Ahddub 5 200827926 - 為'粒子而附著於遮光臈圖案上，成為產线光膜殘留等的 缺陷的原因。並且，為了去除上述的剝離物，不得不增加 光罩基板或光罩的洗淨次數。 因此，有人提出了不形成遮光膜於光罩基板的外周部 分的方式，降低把持光罩基板的遮光罩時的剝離物（粒子） 的產生。亦即，在國際公開2〇〇4/〇51369號公告（以下稱為 「特許文獻1」）中，記載只在透光性基板的周緣部分以外 的部分形成遮光膜，並且以透光性基板的周緣部分作為遮 馨 光膜的未成膜區域的雷射描繪用的光罩基板。在此光罩基 板中，透光基板的尺寸，——邊是大於300mnl以上，且遮光 膜的未成膜區域的寬度成為3mm以上。在此光罩基板之 中，處理的時候，特別是在把持外周部分或側面部分時， 能夠防止來自透光性基板侧面的粒子產生。 【發明内容】 鲁 在上述的特許文獻1記載的光罩基板之中，能夠防止 從透光性基板的外周部分或侧面部分的遮光膜的剝離，並 且在粒子的防止發生可見到處一定的效果。 然而，於此光罩基板的遮光膜的成膜步驟之中，例如， 在利用濺鍍法成膜的情況，為了形成未成膜區域，使用錢 鑛罩幕進行遮蓋。此時，在成膜區域與未成膜區域的邊界 附近，從濺鍍罩幕的空隙回捲的濺鍍素材附著於透光性基 板上，會形成膜厚比起遮光膜的設定膜厚要來得小，並且 膜厚不均一的膜。如上所述的膜，多數的情況，以往透光 2130-9139-PF;Ahddub 6 200827926 性基板的周緣側逐漸地減少膜的厚度的狀態而形成。 如上所述的膜，因為膜的厚度不平均而容易剝離。具 體而言，如此的膜，在光罩基板的搬送或對準（曝光機）安 裝以及其他大多的情況中，無法避免剝離，而成為粒子附 著於罩幕上。 無法避免遮光膜殘留等以及 為了去除像這樣的粒子，例 不得不增加洗淨次數。In the past, pattern transfer was performed using a photomask in lithography. The photomask is manufactured using the photomask substrate as the original material. The mask substrate is formed, for example, by forming a light-shielding film containing chromium as a main component on a light-transmitting substrate made of quartz glass or the like. In the production of the mask substrate as described above, first, a quartz glass or the like is precisely polished to obtain a light-transmitting substrate (polishing step). Then, a light-shielding film containing chromium as a main component (film formation step) is formed on the main surface of the obtained light-transmitting substrate by, for example, a ruthenium plating method. Furthermore, the photomask is coated with a photoresist film on the photomask substrate (coating step (6), and then the photoresist film is selectively exposed (exposure step), and the exposed photoresist film is developed] and then processed. By the patterning of the light-shielding film ((4) processing step), the outer peripheral portion or the side surface portion of the light-transmitting substrate is held in each of the photomask and the photomask substrate at the time of transporting between steps and the like. At this time, the light-shielding film formed on the outer peripheral portion or the side surface portion of the light-transmitting substrate is tilted by the holding of 4^p "-'^marginal part to be held by hand or tools". When peeling off, the peeling material will become 2130-9l39-PF; Ahddub 5 200827926 - is attached to the shading pattern for the particles, which is a cause of defects such as residual light film on the production line. Moreover, in order to remove the above-mentioned peeling material, The number of times of cleaning of the mask substrate or the mask is not increased. Therefore, it has been proposed to reduce the occurrence of peeling particles (particles) when the mask of the mask substrate is held without forming a light shielding film on the outer peripheral portion of the mask substrate. That is, at In the publication of the above-mentioned publication (hereinafter referred to as "patent document 1"), it is described that a light-shielding film is formed only in a portion other than the peripheral portion of the light-transmitting substrate, and the peripheral portion of the light-transmitting substrate is used as In the mask substrate, the size of the light-transmitting substrate is greater than 300 nml and the width of the unfilmed region of the light-shielding film is 3 mm. When the outer peripheral portion or the side surface portion is gripped, the particles from the side surface of the light-transmitting substrate can be prevented from being generated in the case of the above-mentioned Patent Document 1. In the mask substrate, peeling of the light-shielding film from the outer peripheral portion or the side surface portion of the light-transmitting substrate can be prevented, and a certain effect can be obtained in the prevention of occurrence of particles. However, the film formation of the light-shielding film of the mask substrate is achieved. In the step, for example, in the case of film formation by a sputtering method, in order to form an unfilmed region, a money ore mask is used for covering. At this time, the film formation region and the film are not formed. In the vicinity of the boundary of the region, the sputtering material which is retracted from the gap of the sputtering mask adheres to the light-transmitting substrate, and a film having a film thickness smaller than the set film thickness of the light-shielding film and having a small film thickness is formed. In the case of the film as described above, in many cases, the conventional light-transmitting 2130-9139-PF; Ahddub 6 200827926-substrate substrate is formed in a state in which the thickness of the film is gradually reduced. The film as described above is uneven in thickness of the film. In particular, such a film can be prevented from being peeled off during the conveyance or alignment (exposure machine) mounting of the mask substrate and in many other cases, and the particles adhere to the mask. Residues and the like, and in order to remove particles like this, have to increase the number of washings.
因此，在此光罩基板中， 曝光時的缺陷的產生。再者， 如，於表層（pellicle)形成前 因此’本發明有鑑於上述的情形而提案，其目的為提 供種光罩基板以及此光罩基板的製造方法，在搬送或朝 向對準（aligner)的設置等的處理中，可防止遮光膜周緣部 分的剝離，且能夠抑止起因為遮光膜剝離的粒子的發生。 /者，本發明的另—目的為，利用上述的光罩基板， 在光罩基板的搬送或對準設置等的處理中，可防止遮光膜 周緣部分的剝離，而能夠提供—種生產性提高的光罩中間 體、光罩以及此光罩的製造方法。 #再者本^明的另一目的為，在光罩的製造中，可顯 著也提冋曝光步驟的產率，且使得光罩的製造步驟中的洗 淨(表層形成刖的洗淨)次數減少成為可能，❿能夠提昇生Therefore, in this mask substrate, defects are generated at the time of exposure. Further, for example, before the formation of a pellicle, the present invention has been proposed in view of the above circumstances, and an object thereof is to provide a reticle substrate and a method of manufacturing the reticle substrate, which are carried or aligned. In the treatment such as the setting, it is possible to prevent peeling of the peripheral portion of the light-shielding film, and it is possible to suppress the occurrence of particles which are peeled off by the light-shielding film. According to another aspect of the present invention, in the process of transporting or aligning the photomask substrate, the peeling of the peripheral portion of the light-shielding film can be prevented, and the productivity can be improved. The reticle intermediate, the reticle, and the method of manufacturing the reticle. Another object of the present invention is that, in the manufacture of the reticle, the yield of the exposure step can be remarkably improved, and the number of times of cleaning (cleaning of the surface layer 刖) in the manufacturing process of the reticle is made. Reduction is possible, and you can improve your health.
本發明的又一甘彳f Q 、L 一他目的為，提供一種使用上述光 圖案的轉移方法。 為了解決刖述的課題以及達成前述的目的，本發印 光罩基板為具有任一以下的構造。 2130-9139-PF;Ahddub 7 200827926 [構造1] ^透光^基板的主表面上形成有遮光膜，且此遮光膜上 y成有光阻膜的光罩基板，其特徵在於：此遮光膜的形成 區域比起光阻膜的形成區域還大，且在光阻膜的周緣的外 侧，遮光膜的周緣部分露出來。 、’、有構1的本發明的光罩基板之中，遮光膜的形成 區域比起光阻膜的形成區域還大，且在光阻膜的周緣的外 _ 側，遮光膜的周緣部分露出來，所以在後續步驟中，遮光 膜的周緣部分可去除。藉由去除遮光膜的周緣部分，可防 止遮光膜的周緣部分的剝離，且抑制由遮光膜的剝離而引 起的粒子的發生。 再者，在本發明之中，[在透光性基板的主表面上形成 遮光膜]以及[在遮光膜上形成光阻膜]的表現，[在上]可以 疋直接，也可以是隔著其他膜間接。以下的構造之中也相 同。 _ [構造2 ] 透光性基板的主表面上形成有遮光膜，且此遮光膜上 形成有覆蓋此遮光膜的光阻膜的光罩基板，其特徵在於： 光阻膜在覆蓋遮光膜的周緣部分的區域進行曝光。 具有構造2的本發明的光罩基板之中，光阻膜 (Photoresist)在覆蓋遮光膜的周緣部分的區域進行曝 光，所以在後續的步驟中，可顯影而去除光阻膜的覆蓋遮 光膜的周緣部分的區域，並且，在後續步驟之中，可去除 遮光膜的周緣部分。藉由去除遮光膜的周緣部分，可防止 2130-9139-PF；Ahddub 8 200827926 遮光膜的周緣部分的剝離’且抑制由遮光膜的剝離而引起 的粒子的發生C» 本备明的光罩基板的製造方法，為以下的構造的任一 者。 [構造3 ] i括在透光性基板的主表面上形成遮光膜的成膜步驟 ^在遮光膜上塗佈光阻膜的塗佈步驟的光罩基板的製造方Still another glyph f Q, L of the present invention is to provide a transfer method using the above-described light pattern. In order to solve the problems described above and achieve the above-described objects, the present photomask substrate has any of the following structures. 2130-9139-PF; Ahddub 7 200827926 [Configuration 1] A light-shielding film is formed on the main surface of the light-transmitting substrate, and a light-shielding film is formed on the light-shielding film by a photoresist film, which is characterized in that the light-shielding film The formation region is larger than the formation region of the photoresist film, and the peripheral portion of the light shielding film is exposed outside the periphery of the photoresist film. In the mask substrate of the present invention having the structure 1, the formation region of the light shielding film is larger than the formation region of the photoresist film, and the peripheral portion of the periphery of the photoresist film is exposed on the outer side of the periphery of the photoresist film. Come, so in the subsequent step, the peripheral portion of the light shielding film can be removed. By removing the peripheral portion of the light-shielding film, peeling of the peripheral portion of the light-shielding film can be prevented, and generation of particles caused by peeling of the light-shielding film can be suppressed. Further, in the present invention, [the formation of a light-shielding film on the main surface of the light-transmitting substrate] and the [formation of a photoresist film on the light-shielding film] may be either "directly" or may be interposed. Other membranes are indirect. The same is true for the following structures. _ [Structure 2] A light-shielding film is formed on the main surface of the light-transmitting substrate, and a light-shielding film covering the light-shielding film of the light-shielding film is formed on the light-shielding film, wherein the photoresist film covers the light-shielding film The area of the peripheral portion is exposed. In the photomask substrate of the present invention having the structure 2, the photoresist film is exposed in a region covering the peripheral portion of the light-shielding film, so that in the subsequent step, the photoresist film can be removed to remove the light-shielding film. The area of the peripheral portion, and, in the subsequent steps, the peripheral portion of the light shielding film can be removed. By removing the peripheral portion of the light-shielding film, it is possible to prevent the peeling of the peripheral portion of the light-shielding film of 2130-9139-PF; Ahddub 8 200827926 and suppress the occurrence of particles caused by the peeling of the light-shielding film C» The mask substrate of the present invention The manufacturing method is any of the following structures. [Structure 3] The film forming step of forming a light-shielding film on the main surface of the light-transmitting substrate ^ The manufacturing method of the mask substrate in the coating step of applying the photoresist film on the light-shielding film
法，其特徵在於··成膜步驟之中，沿著透光性基板的主表 的周緣的外周部分成為遮光膜的非形成區域，在塗佈步 驟之中ϋ由塗佈光阻膜於包含形成有遮光膜的區域的區 j 、光阻膜覆盍遮光膜的周緣，在塗佈步驟之後，包括 :♦去除已塗佈的光阻膜的周緣部分，使遮光膜的周緣部 分露出的光阻周緣去除步驟。 、具有構造3的本發明的光罩基板的製造方法之中，^ 塗佈光阻膜的塗佈步驟 β 1 1 伸乂驟之後，猎由去除已塗佈的光阻膜白 周緣部分，使露出遮光膜的周緣部分，所以在後續步驟中 可去除遮光膜的周緣部分。藉由去除遮光膜的周緣部分， 可防止遮光膜的周緣部分的剝離’且抑制由遮光膜議 而ί引起的粒子的發生。 [構造4] 在具有構造3的#蓄| 制& 先罩基板的製造方法，其特徵在於j 阻周緣去除步驟包括· •猎由攸透光性基板的襄面側曝光e 遮光膜作為罩幕，#本伽时& 卩膜的周緣部分感光，而在後續步 驟能夠以顯影去除的步驟 乂 、 驟，以及以顯影去除光阻膜的周錄 2130-9139~PF/Ahddub 9 200827926 部分的後步驟。 具有構造4的光罩基板的製造方法之中，藉由從透光 性基板的裏面侧曝光，以遮光膜作為罩幕，使光阻膜的周 緣部分感光，而在後續步驟能夠以顯影去除，且以顯影去 除光阻膜的周緣部分，所以在後續步驟中，可去除遮光膜 的周緣部分。藉由去徐遮光膜的周緣部分，可防止遮光膜 的周緣部分的剝離，且抑制由遮光膜的剝離而引起的粒子 的發生。In the film forming step, the outer peripheral portion along the peripheral edge of the main surface of the light-transmitting substrate serves as a non-formation region of the light-shielding film, and during the coating step, the photoresist film is coated. The region j in which the light shielding film is formed, and the periphery of the photoresist film covering the light shielding film, after the coating step, include: ♦ removing the peripheral portion of the applied photoresist film to expose the peripheral portion of the light shielding film The peripheral removal step. In the method for manufacturing a photomask substrate of the present invention having the structure 3, after the coating step β 1 1 of applying the photoresist film is stretched, the white peripheral portion of the coated photoresist film is removed by hunting. The peripheral portion of the light shielding film is exposed, so the peripheral portion of the light shielding film can be removed in the subsequent step. By removing the peripheral portion of the light-shielding film, peeling of the peripheral portion of the light-shielding film can be prevented and the occurrence of particles caused by the light-shielding film can be suppressed. [Structure 4] A method of manufacturing a splicing substrate having a structure 3, wherein the step of removing the peripheral edge of the mask includes: • hunting the surface of the light-transmissive substrate to expose the light-shielding film as a mask Curtain, #本伽时& The peripheral portion of the enamel film is sensitized, and in the subsequent steps, it can be removed by development, ,, ,, and the development of the photoresist film removed by the recording of 2130-9139~PF/Ahddub 9 200827926 After the steps. In the method of manufacturing a photomask substrate having the structure 4, the peripheral portion of the photoresist film is exposed by the light-shielding film as a mask from the back side of the light-transmitting substrate, and can be removed by development in a subsequent step. And the peripheral portion of the photoresist film is removed by development, so in the subsequent step, the peripheral portion of the light shielding film can be removed. By removing the peripheral portion of the light-shielding film, peeling of the peripheral portion of the light-shielding film can be prevented, and generation of particles caused by peeling of the light-shielding film can be suppressed.
[構造5] ：, 包括在透光性基板的主表面上形成遮光膜的成膜步驟 與在遮光膜上塗佈光阻膜的塗佈步驟的光罩基板的製造方 法，其特徵在於··在塗佈步驟之中，藉由塗佈光阻膜於包 含形成有遮光膜的區域，以光阻膜覆蓋遮光膜的周緣，在 塗佈步驟之後，包括藉由去除已塗佈的光阻膜的周緣部 分，使遮光膜的周緣部分露出的光阻周緣去除步驟。 、在具有構造5的本發明的光罩基板的製造方法之中， 在塗佈綠膜的塗佈步驟之後，藉由去除已塗佈的光阻膜 的周緣部分，使露出遮光膜的周緣部分，所以在後續步驟 T可去除遮光膜的周緣部分。藉由去除遮光膜的周緣部 刀可防止遮光膜的周緣部分的剝離，且抑制由遮光 剝離而引起的粒子的發生。 、' [構造6 ] 在具有構造3或者構造 中，光阻周緣去除步驟包括·· 5的光罩基板的製造方法之 選擇性地在去除光阻膜的區 2130-9139-PF；Ahddub 10 200827926 域曝光，使光阻膜感光，而在後續步驟能夠以顯影去除的 步驟；以及以顯影去除光阻膜的周緣部分的後步驟。 在具有構造6的本發明的光罩基板的製造方法之中， 選擇性地在去除光阻膜的區域曝光，使光阻膜感光，而在 後續步驟能夠以顯影去除的步驟，再藉由顯影去除先阻膜 的周緣部分，所以在後續步驟中，可去除遮光膜的周鍊部 分。藉由去除遮光膜的周緣部分，可防止遮光膜的周錄部 分的剝離，且抑制由遮光膜的剝離而引起的粒子的發生。 9 [構造7] " 在具有構造3或構造5的光罩基板的製造方法之中， 光阻周緣去除步驟是藉由使溶劑與光阻膜的周緣部分接觸 而去除該光阻膜的周緣部分。 纟有構造7的光罩基板的製造方法之中，藉由使溶劑 與光阻膜的周緣部分接觸而去除該光阻膜的周緣部分，所 以在後續步驟中，可去除遮光膜的周緣部分。藉由去除遮 • 光膜的周緣部分，可防止遮光膜的周緣部分的剝離，且抑 制由遮光膜的剝離而引起的粒子的發生。 [構造8] 包括在透光性基板的主表面上形成遮洸膜的成膜步驟 與在遮光膜上塗佈光阻膜的塗佈步驟的光罩基板的製造方 法，其特徵在於：在塗佈步驟之中，使光阻膜的塗佈區域 較遮光膜的形成區域還小，且成為露出遮光膜的周緣部分 的狀態。 77 在具有構造8的本發明的光罩基板的製造方法之中， 2130-9139-PF;Ahddub 200827926 在塗佈光阻膜的塗佈步驟中，使光阻膜的塗佈區域較遮光 膜的^^成區域小，日4、法@ t A 1 成為路出遮光膜的周緣部分的狀 態，所以在後續步驟中，遮光膜的周緣部分可去除。藉由 去除遮光膜的周緣部分，可防止遮光膜的周緣部分的剝 離，且抑制由遮光膜的剝離而引起的粒子的發生。 如上所述，本發明之中，在光罩的使用時的搬送、對 準的叹置等的處理之中，不會產生遮光膜的周緣部分的剝 離，且抑制由遮光膜的制離雨引起的粒子的發生。 亦即，在搬送、對準的設置等的處理之中，本發明可 提供能夠防止遮光膜的周緣部分的剝離’且抑制由遮光膜 2剝離而引起的粒子的發生的光罩基板及的光罩基板的製 造方法。 本發明的光罩中間體.，為具有以下構造者。 [構造9] 透光性基板的主表面上彡 形成有光阻膜的光罩中門體=遮光膜’且此遮光膜上 光罩中間體，其特徵在於：在沿著透光性 的非形成區域，且遮光膜以二，、有遮先膜以及光阻膜 於 、、光阻膜的周緣的端面，相對 透先性基板的主表面的垂直方向實質上為-致。 性美22發明構造9的光罩中間體之中，在沿著透光 =表面的周緣的外周部分’具有遮光膜 域’且遮光膜以及光阻膜的周緣的端面，相 可防= 表面的垂直方向實質上為-致，所以 膜的周緣部分的剝離，且抑制由遮光膜的剝離 2l30-9l39-PF；Ahddub 12 200827926 而引起的粒子的發生。 本發明的光罩，為具有以下構造的任_者。 [構造10] 在透光性基板的主表面上，包括形成有既定圖案的遮 先膜的鮮’其特餘於：在沿㈣綠基板的主表面的 周緣的外周部分，具有不形成遮光膜的非形成區域，且在 面對非形成區域的遮光膜的用 、 、的周緣的鳊面附近，該遮光膜的 膜厚為未滿此遮光料設定膜厚的區域，而該遮光膜斑非 形成區域的邊界的距離為未滿500 #m的區域。 在具有構造10的本發 +1明的先罩之中，在沿著透光性基 板的主表面的周緣的外周部分， 、 77 具有不形成遮光膜的非形 成區域，且在面對非形点F々 办成區域的遮光膜的周緣的端面附 近，該遮光膜的膜厚為未滿此遮光膜的設㈣厚的區域， 而該遮光膜與非形成區域的邊界的距離為未滿5。—的 區域，所以可防止遮光膜的H祕 勝的周緣部分的剝離，且抑制由遮 光膜的剝離而引起的粒子的發生。 [構造11][Configuration 5]: a method of manufacturing a mask substrate comprising a film forming step of forming a light shielding film on a main surface of a light-transmitting substrate and a coating step of applying a photoresist film on the light-shielding film, characterized in that In the coating step, the photoresist is coated on the region including the light-shielding film, and the periphery of the light-shielding film is covered with a photoresist film, after the coating step, including by removing the coated photoresist film. The peripheral portion of the photoresist is a peripheral step of removing the photoresist from which the peripheral portion of the light-shielding film is exposed. In the method of manufacturing a photomask substrate of the present invention having the structure 5, after the coating step of applying the green film, the peripheral portion of the light-shielding film is exposed by removing the peripheral portion of the applied photoresist film. Therefore, the peripheral portion of the light shielding film can be removed in the subsequent step T. By removing the peripheral portion of the light-shielding film, peeling of the peripheral portion of the light-shielding film can be prevented, and generation of particles due to peeling by light-shielding can be suppressed. [Configuration 6] In the configuration 3 or the configuration, the photoresist peripheral removal step includes a method of manufacturing the photomask substrate selectively in the region 2130-9139-PF where the photoresist film is removed; Ahddub 10 200827926 The field exposure, the step of sensitizing the photoresist film, and the step of being removed by development in a subsequent step; and the subsequent step of removing the peripheral portion of the photoresist film by development. In the manufacturing method of the photomask substrate of the present invention having the structure 6, the photoreceptive film is selectively exposed in the region where the photoresist film is removed, and the photoresist film is exposed to light, and in the subsequent step, the step of developing can be removed by development. The peripheral portion of the first resist film is removed, so that in the subsequent step, the peripheral portion of the light shielding film can be removed. By removing the peripheral portion of the light-shielding film, peeling of the peripheral portion of the light-shielding film can be prevented, and generation of particles due to peeling of the light-shielding film can be suppressed. 9 [Construct 7] " In the manufacturing method of the photomask substrate having the structure 3 or the structure 5, the photoresist peripheral removing step is to remove the periphery of the photoresist film by bringing the solvent into contact with the peripheral portion of the photoresist film. section. In the method of manufacturing a photomask substrate having the structure 7, the peripheral portion of the photoresist film is removed by bringing the solvent into contact with the peripheral portion of the photoresist film, so that the peripheral portion of the light-shielding film can be removed in the subsequent step. By removing the peripheral portion of the light-shielding film, peeling of the peripheral portion of the light-shielding film can be prevented, and generation of particles caused by peeling of the light-shielding film can be suppressed. [Configuration 8] A method of manufacturing a mask substrate comprising a film forming step of forming a concealing film on a main surface of a light-transmitting substrate and a coating step of coating a photoresist film on the light-shielding film, characterized in that: In the cloth step, the application region of the photoresist film is made smaller than the formation region of the light shielding film, and the peripheral portion of the light shielding film is exposed. 77 In the manufacturing method of the photomask substrate of the present invention having the structure 8, 2130-9139-PF; Ahddub 200827926, in the coating step of coating the photoresist film, the coating region of the photoresist film is made thinner than the light shielding film ^^ into a small area, day 4, method @ t A 1 becomes the state of the peripheral portion of the light-emitting film, so in the subsequent step, the peripheral portion of the light-shielding film can be removed. By removing the peripheral portion of the light-shielding film, peeling of the peripheral portion of the light-shielding film can be prevented, and generation of particles caused by peeling of the light-shielding film can be suppressed. As described above, in the present invention, in the process of transporting, slanting, or the like during use of the photomask, peeling of the peripheral portion of the light-shielding film does not occur, and the rain-off of the light-shielding film is suppressed. The occurrence of particles. In other words, in the process of transporting, aligning, and the like, the present invention can provide a mask substrate and light that can prevent the peeling of the peripheral portion of the light-shielding film and suppress the occurrence of particles caused by the peeling of the light-shielding film 2 A method of manufacturing a cover substrate. The photomask intermediate of the present invention has the following structure. [Configuration 9] The main surface of the light-transmissive substrate has a light-shielding film in which a gate body = a light-shielding film is formed on the main surface of the light-transmissive substrate, and the light-shielding film is formed on the light-shielding film. The formation region and the light-shielding film are two, the mask film and the photoresist film, and the end surface of the periphery of the photoresist film are substantially perpendicular to the vertical direction of the main surface of the transparent substrate. Among the mask intermediates of the invention 9 of the invention, the outer peripheral portion 'having a light-shielding film domain' along the periphery of the light-transmitting surface is provided, and the end faces of the light-shielding film and the periphery of the photoresist film are prevented from being surface-resistant. The vertical direction is substantially the same, so that the peripheral portion of the film is peeled off, and the occurrence of particles caused by the peeling of the light-shielding film 2l30-9l39-PF; Ahddub 12 200827926 is suppressed. The photomask of the present invention has any of the following configurations. [Configuration 10] On the main surface of the light-transmitting substrate, the masking film including the predetermined pattern is formed to have a light-shielding film on the outer peripheral portion of the peripheral edge of the main surface of the (four) green substrate. In the non-formation region, the film thickness of the light-shielding film is in a region that is less than the film thickness of the light-shielding material in the vicinity of the surface of the periphery of the light-shielding film facing the non-formation region, and the light-shielding film spot is not The distance at which the boundary of the region is formed is an area of less than 500 #m. In the hood of the present invention having the structure 10, in the outer peripheral portion along the periphery of the main surface of the light-transmitting substrate, 77 has a non-formed region in which a light-shielding film is not formed, and is in a non-formed shape. In the vicinity of the end surface of the peripheral edge of the light-shielding film in the region F, the film thickness of the light-shielding film is a region which is not thicker than the light-shielding film, and the distance between the light-shielding film and the boundary of the non-formation region is less than 5 . In the region of -, the peeling of the peripheral portion of the H-secure film is prevented, and the occurrence of particles caused by the peeling of the light-shielding film is suppressed. [Structure 11]
具有構造10的光罩之φ，诡止g k P π旱之中，遮先膜的膜厚成為未滿此遮 光膜的'设定膜厚的區域為，腺《去 腰与未滿汉疋膜厚的98%的區. 域0 具有構造11的本發明的光罩之中，遮光膜的膜厚成為 未滿此遮光膜的設定膜厚的區域為，膜厚未滿較膜厚的 98%的區域，所以可防止辨本田 」w止遝九膜的周緣部分的剝離，且抑制 由遮光膜的剝離而引起的粒子的發生。 2130-9139-PF;Ahddub 13 200827926 v [構造12] 在透光性基板的主表面上，包括形成有既定圖案的遮 光膜的光罩，其特徵在於：在沿著透光性基板的主表面的 周緣的外周部分，具有不形成遮光膜的非形成區域，且在 面對非形成區域的遮光膜的周緣的端面為，對此遮光膜進 行蝕刻處理的被蝕刻區域的界面。 具有構造12的本發明的光罩之中，在沿著透光性基板 鲁#主表面的周緣的外周部分，具有不形成遮光膜的非形成 區域，且在面對非形成區域的遮.光膜的周緣的端面為，對 此遮光膜進行蝕刻處理的被蝕刻區域的界面，所以可防止 遮光膜的周緣部分的剝離，且抑制由遮光膜的剝離而引起 的粒子的發生。 本發明的光罩的製造方法為具有以下構造的任一者。 [構造13] 使用形成有遮光膜於透光性基板的主表面上的遮光膜 Φ 、开y成有光阻膜的光罩基板，在遮光膜形成既定的圖案的 光罩的製方法，其特徵在於··包括去除遮光膜的周緣部 分的既定寬度的區域的步驟。 具有構造13的本發明的光罩的嚷造方法之中，包括去 除遮光膜的周緣部分的既定寬度的區域的步驟，所以可防 止遮光膜的周緣部分的剝離，且抑制由遮光膜的剝離而引 起的粒子的發生。 [構造14] 使用為透光性基板的主表面上形成有遮光膜，且此遮 2130-9139一PF;Ahddub 14 200827926 光膜上形成有光阻膜的氺 膘的先罩基板，且形成遮光膜的區域比 起形成光阻膜的區域還大，1在光阻膜的周緣的外侧，遮 先膜的周緣部分露出來的光罩基板，在遮光膜形成既定的 圖㈣光罩的製造方法，其特徵在於包括：對於光阻膜將 既疋的圖案曝光’且顯影而形成光阻圖案的步驟；以光阻 圖案作為罩幕，利㈣擇性地去除遮光膜，在此遮光膜形 成既定的圖案，叫去除露出於光阻膜的騎的外侧的遮The φ of the photomask having the structure 10 is in the gk P π drought, and the film thickness of the mask film is less than the area of the set film thickness of the light shielding film, and the gland is "waist and underfilled." 98% thick area. Field 0 In the photomask of the present invention having the structure 11, the film thickness of the light shielding film is less than the set film thickness of the light shielding film, and the film thickness is less than 98% of the film thickness. In this case, it is possible to prevent the peeling of the peripheral portion of the Honda film and the occurrence of particles caused by the peeling of the light-shielding film. 2130-9139-PF; Ahddub 13 200827926 v [Configuration 12] A photomask including a light-shielding film formed with a predetermined pattern on a main surface of a light-transmitting substrate, characterized in that a main surface along a light-transmitting substrate The outer peripheral portion of the peripheral edge has a non-formed region where the light-shielding film is not formed, and the end surface of the peripheral edge of the light-shielding film facing the non-formed region is the interface of the etched region where the light-shielding film is etched. In the photomask of the present invention having the structure 12, the outer peripheral portion along the periphery of the main surface of the light-transmitting substrate Lu has a non-formation region in which a light-shielding film is not formed, and a light-blocking surface facing the non-formation region Since the end surface of the peripheral edge of the film is the interface of the region to be etched by etching the light-shielding film, peeling of the peripheral portion of the light-shielding film can be prevented, and generation of particles due to peeling of the light-shielding film can be suppressed. The method of manufacturing the photomask of the present invention has any of the following configurations. [Structure 13] A method of manufacturing a mask in which a light-shielding film Φ having a light-shielding film formed on a main surface of a light-transmitting substrate is formed, and a mask substrate having a photoresist film is formed, and a predetermined pattern is formed on the light-shielding film, It is characterized in that it includes a step of removing a region of a predetermined width of a peripheral portion of the light shielding film. In the manufacturing method of the photomask of the present invention having the structure 13, the step of removing the region of the predetermined width of the peripheral portion of the light-shielding film prevents the peeling of the peripheral portion of the light-shielding film and suppresses the peeling of the light-shielding film. The occurrence of particles caused. [Construction 14] A light-shielding film is formed on the main surface of the light-transmitting substrate, and the mask substrate of the germanium is formed on the light film of Ahddub 14 200827926, and the light-shielding film is formed. The area of the film is larger than the area where the photoresist film is formed. 1 The photomask substrate exposed to the peripheral portion of the film is formed on the outer side of the periphery of the photoresist film, and a predetermined pattern is formed on the light-shielding film. The method includes the steps of: exposing and patterning the patterned pattern to the photoresist film to form a photoresist pattern; and using the photoresist pattern as a mask to selectively remove the light shielding film, wherein the light shielding film is formed. The pattern is called the removal of the outer cover of the ride exposed on the photoresist film.
光膜的周緣部分的步驟。 具有構造14的本發明的光罩的製造方法之中，去除露 出於光阻膜的周緣的外側的遮光膜的周緣部分，所以可防 止遮光膜的周緣部分的剝離，且抑制由遮光膜_離而引 起的粒子的發生。 [構造15] 使用為透光性基板的主表面上形成有遮光膜，且覆蓋 此光阻膜的遮光膜的周緣部分的區域被曝光的光罩基板， •在遮光膜形成既定的圖案的光罩的製造方法，其特徵在於 包括：對於光阻膜將既定的圖案曝光，㈣影而形成光阻 圖案的步驟；以光阻圖案作為罩幕，利用選擇性地去除遮 光膜，在此遮光膜形成既定的圖案，同時去除露.出於光阻 膜的周緣的外側的遮光膜的周緣部分的步驟。 具有構造15的本發明的光罩:的製造方法之中，去除露 出於光阻膜的周緣的外侧的遮光膜的周緣部分，所以可2 止遮光膜的周緣部分的剝離，且抑制由遮光膜的剝離而引 起的粒子的發生。 2130-9139-PF;Ahddub 200827926 [構造16] 使用為透光性基板的主表面上形成有遮光膜，且在此 遮先膜上形成光阻膜的光罩基板’在遮光膜形成既定的圖 案的光罩的製造方法，其特徵在於包括：對於光阻膜將既 疋的圖案曝光的同時，針對相當於光阻膜的遮光膜的周緣 部分的區域曝光的步驟；顯影光阻膜以形成光阻圖案的步 驟’以光阻圖案作為罩幕，利用選擇性地去除遮光膜，在 此遮光膜形成既定的㈣，同時去除露出於光阻膜的周緣 的外侧的遮光膜的周緣部分的步驟。 具有構造16的本發明的光罩的製造方法之中，去除露 出於光阻膜的周緣的外側的遮光膜的周緣部分，所以可防 止遮光膜的周緣部分的剝離，且抑制由遮光膜的剝離而引 起的粒子的發生。 [構造17] 構造13〜構造16任一個光罩的製造方法之中，去除遮 光膜的周緣部分’包含膜厚成為未滿遮光膜的設^膜厚的 區域的至少一部分。 具:有構造17的光罩的製造方法之中，去除遮光膜的周 緣‘刀，包含膜厚成為未滿遮光膜的㈣膜厚的區域的至 少一部分’所以可防止遮光膜的周緣部分的剝離，且抑制 由遮光膜的剝離而引起的粒子的發生。 亦即’本發明藉由使用上述的光罩基板，可提供在搬 準的設置等的處理中，所以可防止遮光膜的周緣部 /刀的剝離’且抑制由遮光膜的剝離而引起的粒 2130-9l39-PF；Ahddub 16 200827926 以及如上述的光罩的製 且生產性提昇的光罩中間體及光罩 造方法。 亦即，本發明在光罩的製造方法之中，可顯著地提高 曝光步驟的產率，且使得光罩的製造步驟中的洗淨（表層形 成前的洗淨）次數減少成為可能，而能夠提昇生產性。 本發明的圖案的轉移方法為具有以下構造者。 [構造18]The step of the peripheral portion of the light film. In the method for producing a photomask according to the present invention having the structure 14, since the peripheral portion of the light-shielding film exposed on the outer side of the periphery of the photoresist film is removed, peeling of the peripheral portion of the light-shielding film can be prevented, and the light-shielding film can be prevented from being separated. And the occurrence of particles. [Configuration 15] A photomask substrate in which a light-shielding film is formed on a main surface of a light-transmitting substrate, and a region of a peripheral portion of the light-shielding film covering the photoresist film is exposed, and a light having a predetermined pattern is formed on the light-shielding film A method for manufacturing a cover, comprising: exposing a predetermined pattern to a photoresist film, and (4) forming a photoresist pattern; and using the photoresist pattern as a mask, selectively removing the light shielding film, wherein the light shielding film is used The step of forming a predetermined pattern while removing the peripheral portion of the light-shielding film on the outer side of the periphery of the photoresist film is removed. In the manufacturing method of the photomask of the present invention having the structure 15, since the peripheral portion of the light shielding film exposed outside the periphery of the photoresist film is removed, peeling of the peripheral portion of the light shielding film can be prevented, and the light shielding film can be suppressed. The occurrence of particles caused by the peeling. 2130-9139-PF; Ahddub 200827926 [Structure 16] A photomask substrate in which a light-shielding film is formed on a main surface of a light-transmitting substrate, and a photoresist film is formed on the mask film, a predetermined pattern is formed on the light-shielding film A method of manufacturing a photomask comprising: a step of exposing a region corresponding to a peripheral portion of a light-shielding film of the photoresist film while exposing the pattern of the photoresist to the photoresist film; and developing the photoresist film to form light The step of the resist pattern is a step of using the photoresist pattern as a mask to selectively remove the light-shielding film, thereby forming a predetermined (four) light-shielding film while removing the peripheral portion of the light-shielding film exposed outside the periphery of the photoresist film. In the method for producing a photomask according to the present invention having the structure 16, since the peripheral portion of the light-shielding film exposed on the outer side of the periphery of the photoresist film is removed, peeling of the peripheral portion of the light-shielding film can be prevented, and peeling of the light-shielding film can be suppressed. And the occurrence of particles. [Structure 17] In the manufacturing method of any one of the structures 13 to 16, the peripheral portion ** of the light-shielding film is removed to include at least a part of a region where the film thickness is less than the thickness of the light-shielding film. In the method of manufacturing a photomask having the structure 17, the peripheral edge of the light-shielding film is removed, and the film thickness is at least a part of the region of the film thickness of the (four) film which is less than the light-shielding film. Therefore, peeling of the peripheral portion of the light-shielding film can be prevented. And suppressing the occurrence of particles caused by peeling of the light shielding film. In other words, the present invention can be used in the process of positioning or the like by using the above-described photomask substrate. Therefore, it is possible to prevent the peeling of the peripheral portion/knife of the light-shielding film and to suppress the peeling caused by the peeling of the light-shielding film. 2130-9l39-PF; Ahddub 16 200827926 and a photomask intermediate and a reticle manufacturing method for the production and productivity improvement of the reticle as described above. That is, the present invention can significantly improve the yield of the exposure step in the method of manufacturing the photomask, and can reduce the number of times of cleaning (cleaning before the formation of the surface layer) in the manufacturing process of the mask, and can Improve productivity. The pattern transfer method of the present invention has the following constitution. [Configuration 18]
使用藉由申請專利範圍第10項至申請專利範圍第u 項之中任-項所述的光罩，或者中請專利範圍第i3至申請 專利範圍帛17項之中任—項所述之光罩的製造方法而製 造的光罩’藉由具有雷射光源的描㈣將形成料罩的遮 光膜的圖案轉移至被轉移體上。 具有構造18的圖案的轉移方法之中，使用本發明的光 罩’或者藉由本發明的光罩的製造方法而製造的光罩，利 用描繪機將形成於光罩的遮光膜的圖案轉移至被轉移體 上，所以可防止遮光膜的周緣部分的剝離，且抑制由遮光 膜的剝離而引起的粒子的發生，戶斤以可良好地進行圖案的 轉移。 【實施方式】 以下，說明用以實施本發明的最佳的實施的形態。 [光罩基板的製造方法的實施的形態] 以下，以各步驟的順序說明本發明的光罩基板的製造 方法。此外，藉由實施本發明的光罩基板的實施方法，可 2130-9139-PF;Ahddub 17 200827926 製造本發明的光罩基板。 [1 ]成膜步驟 第1圖為顯示本發明的光罩基板的製造方法的各步驟 的剖面圖。 首先’如第1圖中的（a)所顯示，精密研磨由石英玻璃 等所組成的透光性基板1的主表面la，然後在此透光性基 板1的主表面la上，利用濺鍍等的裝置形成遮光膜2。 透光性基板1，例如，可以使用5mm至15mm左右的厚 度遮光膜2，最好使用鉻為主成份，但不限·定此。再者， 遮光膜2也可以為透過曝光光線的一部分的半透光性的 膜。此外，遮光膜2也可以為積層複數的膜（例如，複數的 遮光膜、或者遮光膜以及半透過膜）的膜。 第2圖為顯示形成遮光膜於整個透光性基板的主表面 的光罩基板的構造的剖面圖。 在遮光膜2的形成中，如第2圖所示，也可以利用3 鍍於整個透光性基板1的主表面la而成膜遮光膜2。缺, 在整個遮光膜2於透光性基板1的主表面1&上成膜的話 會引起後續的不好影響。亦即，遮光膜2的材料回捲至, 先性基板1的端面（侧面）lb而成膜。例如，後續步驟，名 土佈光阻於透光性基板丨的步㈣後的搬 性基板1的時候，此沪；加八以 、此私面部分的膜剝離而變成粒子。因此 在遮光膜2的形成中，导虹α 成中取好留下沿著透光性基板1的主表 面la的周緣的部分成為 柘1的士本二， 、尤膘Z的非形成區域。透光性基 板1的主表面la的周緣 刀疋胰非形成區域的話，如前述 213〇-9139-PF;Ahddub 18 200827926 ▲ 的粒子發生的擔心可以解除。此外，遮光膜2的非形成區 域，最好從透光性基板1的主表面la的周緣起算lmm至 1 Omni左右的寬度的範圍。The use of the reticle described in any of the claims of claim 10, or the ninth aspect of the patent application, i. The mask "manufactured by the method of manufacturing the cover" transfers the pattern of the light shielding film forming the mask to the object to be transferred by drawing (4) having a laser light source. In the transfer method having the pattern of the structure 18, the mask produced by the photomask of the present invention or the mask produced by the method for producing a mask of the present invention is used to transfer the pattern of the light-shielding film formed on the mask to the image by the imager. Since it is on the transfer body, peeling of the peripheral portion of the light-shielding film can be prevented, and generation of particles due to peeling of the light-shielding film can be suppressed, and the pattern can be favorably transferred. [Embodiment] Hereinafter, embodiments for carrying out the best mode of the present invention will be described. [Embodiment of Manufacturing Method of Photomask Substrate] Hereinafter, a method of manufacturing the photomask substrate of the present invention will be described in the order of the respective steps. Further, by implementing the method of implementing the photomask substrate of the present invention, the photomask substrate of the present invention can be manufactured by 2130-9139-PF; Ahddub 17 200827926. [1] Film forming step Fig. 1 is a cross-sectional view showing the steps of a method of manufacturing a mask substrate of the present invention. First, as shown in (a) of FIG. 1, the main surface 1a of the light-transmitting substrate 1 composed of quartz glass or the like is precisely ground, and then on the main surface 1a of the light-transmitting substrate 1 by sputtering The device of the like forms the light shielding film 2. For the light-transmitting substrate 1, for example, a light-shielding film 2 having a thickness of about 5 mm to 15 mm can be used, and it is preferable to use chromium as a main component, but it is not limited thereto. Further, the light shielding film 2 may be a semitransparent film that transmits a part of the exposure light. Further, the light shielding film 2 may be a film in which a plurality of films (for example, a plurality of light shielding films or light shielding films and semipermeable films) are laminated. Fig. 2 is a cross-sectional view showing the structure of a mask substrate on which a light-shielding film is formed on the main surface of the entire light-transmitting substrate. In the formation of the light-shielding film 2, as shown in Fig. 2, the light-shielding film 2 may be formed by plating the main surface la of the entire light-transmissive substrate 1. In the case where the entire light-shielding film 2 is formed on the main surface 1& of the light-transmitting substrate 1, it may cause subsequent adverse effects. That is, the material of the light shielding film 2 is rewinded to form an end surface (side surface) 1b of the precursor substrate 1. For example, in the subsequent step, when the name of the earth cloth is blocked by the movable substrate 1 after the step (4) of the light-transmitting substrate, the film of the private surface is peeled off and becomes particles. Therefore, in the formation of the light-shielding film 2, the portion which is formed along the periphery of the main surface la of the light-transmitting substrate 1 is formed as a non-formation region of 柘1, 膘1, and 膘Z. When the peripheral edge of the main surface la of the light-transmitting substrate 1 is not formed, the fear of occurrence of particles such as the above-mentioned 213〇-9139-PF; Ahddub 18 200827926 ▲ can be released. Further, it is preferable that the non-formation region of the light-shielding film 2 is in the range of a width of about 1 mm to 1 Omni from the periphery of the main surface la of the light-transmitting substrate 1.
在利用濺鍍法形成遮光膜2的情況中，設置非形成區 域2a ’最好遮蓋沿著透光性基板1的主表面1 &的周緣的 部分再進行濺鍍。但是，在此種情況下，從透光性基板1 與濺鍍罩幕的空隙間回捲的濺鍍素材附著於透光性基板 1。此種結果’沿著遮光膜2的周緣，形成無法達到此遮光 膜2的設定膜厚的膜厚不均的膜2b。例如，假設遮光膜 2的设定膜厚為8〇11111(800人）至15〇11111(1 500人）之間的既定 值。在此狀況下，於遮光膜2的周緣側，形成從其設定膜 厚逐漸減少而至零（非形成）的不均一的膜厚的區域2b。多 數的情況，無法達到設定膜厚的部分2b，在遮光膜的周緣 lmm以上（例如，1_至15mm)的寬度而形成。在此，設定 膜厚為作為遮光膜設定的膜層厚度。因此，設定膜厚為上 迟周緣邛刀以外的膜層厚度，但是，方便而言，可以為膜 中央靠近旁邊的厚度。此外，設定膜厚部分，藉由使用觸 針法的測d膜厚的偏差成為⑽㈣（则A)以下。相對於 此，在上述周緣部，存在膜厚的偏差成為5〇ηιη(5〇〇Α)以上 的部分。 此遮光膜2的周緣側的膜厚的不平均的區域2b， ;!離而有欠成粒子發生源之虞。本發明，在後述的後處理 中利用蝕刻處理等去除如此之膜厚不均一的區域2b。亦 在本^明中，能夠使如上述的膜厚偏差50nm(500A)以 213〇-9139-PF；Ahddub 19 200827926 上的部分消失。 [2 ]光阻塗佈步驟 其次，如第1圖中的m μ 的遮光膜2上，塗佈光㈣；在透光性基板1上成膜 的形成綠材㈣成絲膜3。此光阻膜3 區域），隶好包含遮光膜2的 >成區域的整體。亦即，光 L t 巧丨且膜3覆盍遮光膜2的全體， 此外，也形成於遮光膜2的In the case where the light-shielding film 2 is formed by sputtering, the non-formation region 2a' is preferably provided to cover the portion along the periphery of the main surface 1 & of the light-transmitting substrate 1 and then sputtered. However, in this case, the sputtering material which is retracted from the gap between the light-transmitting substrate 1 and the sputtering mask adheres to the light-transmitting substrate 1. As a result of this, along the peripheral edge of the light-shielding film 2, a film 2b having a film thickness unevenness which cannot reach the set film thickness of the light-shielding film 2 is formed. For example, it is assumed that the set film thickness of the light-shielding film 2 is a predetermined value between 8 〇 11111 (800 people) to 15 〇 11111 (1,500 people). In this case, on the peripheral side of the light-shielding film 2, a region 2b having a non-uniform film thickness from which the film thickness is gradually reduced to zero (not formed) is formed. In many cases, the portion 2b in which the film thickness is set cannot be formed, and is formed at a width of 1 mm or more (for example, 1 to 15 mm) around the periphery of the light shielding film. Here, the film thickness is set to the film thickness set as the light shielding film. Therefore, the film thickness is set to be the thickness of the film layer other than the peripheral edge burr, but, conveniently, it may be the thickness near the center of the film. Further, the film thickness portion is set, and the variation in the thickness of the d film by the stylus method is (10) (four) (then A) or less. On the other hand, in the peripheral portion, the variation in film thickness is 5 〇 η (5 〇〇Α) or more. The uneven region 2b of the film thickness on the peripheral side of the light-shielding film 2 is separated from the source of the particle formation. In the present invention, such a region 2b having a non-uniform film thickness is removed by an etching treatment or the like in a post-processing to be described later. Also in the present invention, the film thickness deviation of 50 nm (500 A) as described above can be eliminated by 213 〇 - 9139-PF; Ahddub 19 200827926. [2] Photoresist coating step Next, light (4) is applied onto the light-shielding film 2 of m μ in Fig. 1 , and a green film (four) silk-forming film 3 is formed on the light-transmitting substrate 1. This photoresist film 3 region) is composed of the > region of the light-shielding film 2 as a whole. That is, the light L t is delicate and the film 3 covers the entire surface of the light-shielding film 2, and is also formed on the light-shielding film 2
非开/成區域2a上。但是，光阻 膜3最好只在透光性基板〗 疋尤阻 备备 的主表面la上形成。原因為， 在透元性基板1的端面lb， 或者回捲至，形成於端面〗b上 的切面的這些部分的光阻膜剝離，而有產生粒子之虞。 光阻材,,斗的塗佈方法，能夠採用使用旋轉塗佈機等' 廣為人知的裝置的，方法。再去 丹考，也可以猎由使用覆蓋塗佈 機（Cap C〇ater)的方式而塗佈光阻材料。在使用此覆蓋塗Non-open/into area 2a. However, it is preferable that the photoresist film 3 is formed only on the main surface 1a of the light-transmissive substrate. The reason is that the resist film of these portions of the cut surface formed on the end surface b is peeled off at the end surface 1b of the transparent substrate 1, or is entangled with particles. A method of applying a well-known device such as a spin coater to a photoresist or a coating method of a bucket can be employed. Going to Dan Khao, you can also apply the photoresist material by using a cover coater (Cap C〇ater). Applying this overlay
佈機的方式，首先，利用R J用開口鳊朝向上方的喷嘴中的毛細 現象’使光阻材料上昇。其次，使得到達此噴嘴的開口端 的光阻材料接液至朝向下方的透光性基板1的被塗佈面。 然後，利用這些喷嘴與透光性基板】相對移動，而於透光 性基板1的被塗佈面上形成光阻層3。 再者，在此步驟之中，有可能使光阻膜的形成區域 比遮光膜2的形成區域小。於透光性基板i的主表面。的 周緣部分形成遮光膜2的非形成區域2a的情況，再者，如 第2圖所示’遮光膜2於整個透光性基板】的主表面1 &成 膜的情況下，光阻膜3的形成區域能夠比遮光膜2的形成 區域小。在此情況下，能夠省略後述[3]光阻的一部分去除 2130-9139~PF;Ahddub 20 200827926 步驟。 但是’從光阻膜3的 怖裝置的簡便性等的觀點丄、疋吐或疋光阻材料的塗 予旳戒點，光阻膜3的 遮光膜2的形成區域， 成區域最好包含 m光阻的-部分去除㈣ ^膜2。 刖述的步驟之中，光阻膜3以覆蓋遮光 成的情況下，此步驟如第！圖中的（e)所亍^式形 的周緣部分3a，而得彳不’去除光阻膜3 向仔到去除周緣部分的光 利用去除光阻膜3_^^ 亦即， 分的光阻膜3A的下> # & & ^ 1 ^ ，、匕周緣邰 於外方ι 下^成的遮光膜2的周緣部分2b露出 光阻膜3被去除的區域gn 由蝕刻等虚理 匕作3a在後述的後步驟之中，藉 由㈣4處理，以為遮光膜2去除的 膜2的去除會視需| & P U此，遮先 3a。 而要的£域’而決定去除光阻膜3的區域 作為去除綠们㈣定區域 後所述的方法。亦即，此去除方法，使光阻材2❹如 勰氺阳贈9 α 從尤丨且材枓的溶劑接 觸光阻膜3的既定 氺阳臌Q 伋去除此溶劑既定區域的 、。例如’可考慮如後所述的去除方法的考量。首 +於去除纽膜3的區域3a以外的光㈣3的 •覆蓋著遮，蓋物構件。 上 Μ— I物構件的上方，供給 的洛劑。然後’經由設置於遮蓋物構件的供紙孔， 而使光^ 3的去除部分溶解。再者，其他的去除方法， 利用噴f朝向先阻膜3的去除部分3a供給溶劑，再藉由溶 2130-9139^pF;Ahddub 21 200827926 心到達此去除部分3b的方式也可以控制。或者，另一個 去除方法，蕪由人士 曰由3有光阻材料的溶劑的布，擦拭光阻膜3 的去除部分3a的方式也可以。、 第 剖面圖 圖為顯示對光阻膜的周緣部分進行曝光的狀態的In the manner of the cloth machine, first, the photoresist is raised by the capillary phenomenon in the nozzle which is opened upward by the R J. Next, the photoresist material reaching the open end of the nozzle is brought to the coated surface of the light-transmitting substrate 1 facing downward. Then, the nozzles are moved relative to the light-transmitting substrate, and the photoresist layer 3 is formed on the surface to be coated of the light-transmitting substrate 1. Further, in this step, it is possible to make the formation region of the photoresist film smaller than the formation region of the light shielding film 2. On the main surface of the light-transmitting substrate i. In the case where the peripheral portion is formed in the non-formation region 2a of the light-shielding film 2, and in the case where the main surface 1 & the light-shielding film 2 is formed on the entire light-transmissive substrate as shown in Fig. 2, the photoresist film is formed. The formation region of 3 can be smaller than the formation region of the light shielding film 2. In this case, it is possible to omit a part of the removal of the [3] photoresist described later, 2130-9139~PF; Ahddub 20 200827926. However, from the viewpoint of the simplicity of the photoresist film 3, the application of the smear or the photoresist, the formation region of the light-shielding film 2 of the photoresist film 3 preferably includes m. Part of the photoresist - (4) ^ film 2. In the case of the above-mentioned steps, in the case where the photoresist film 3 is shielded from light, this step is as follows! In the figure, the peripheral portion 3a of the shape of (e) is removed, and the photoresist film 3 is removed to remove the light from the peripheral portion by using the photoresist film 3_^^, that is, the photoresist film. Under the 3A, <#&& ^ 1 ^ , the peripheral portion 2b of the light-shielding film 2 which is formed by the outer periphery of the outer layer 露出 is exposed, and the region gn from which the photoresist film 3 is removed is removed by etching or the like. 3a is processed by (4) 4 in the latter step, which will be described later, so that the removal of the film 2 removed by the light-shielding film 2 is required to be preceded by 3 & The desired area is to remove the area of the photoresist film 3 as a method of removing the green areas (4). That is, the removal method is such that the photoresist member 2, such as the yoke-free 9 y, removes the predetermined region of the solvent from the predetermined yttrium yttrium of the solvent-contacting resist film 3 of the yttrium. For example, the consideration of the removal method as described later can be considered. First, the light (4) 3 other than the area 3a from which the film 3 is removed is covered with a cover and a cover member. Above the top of the I-component, the agent is supplied. Then, the removed portion of the light is dissolved by the paper feed hole provided in the cover member. Further, other removal methods can be controlled by supplying the solvent to the removed portion 3a of the first resist film 3 by the spray f, and then reaching the removed portion 3b by dissolving 2130-9139^pF; Ahddub 21 200827926. Alternatively, another removal method may be performed by a person who wipes the removed portion 3a of the photoresist film 3 by a cloth having a solvent of a photoresist material. , the first sectional view shows the state in which the peripheral portion of the photoresist film is exposed.
”再者此步驟之中，不進行直到去除光阻膜3的既定 :域3a，而如第3圖所示，使用遮光罩幕4以及光源5, 一、十對該區域3a，進行選擇性的曝光也可以。亦即，來自 光源5的光束，罄由利用遮光罩幕4遮蓋，而不會到達光 阻膜3的中央部分。另一方面，…源5的光束通過遮 ::幕4的外周侧而到達光阻膜3的外周部分^，使得此 ^刀3&的光阻膜3感光。在此情況下，在後述的後處理步 驟中’或者’在後述的光罩製造步驟中，使得光阻膜3的 曝光區域3a顯影，且成為可去除。 “再者’如第4圖所示，不使用遮光罩幕4,藉由使得 來自光源5的光束，由透光性基板1的裏面lc侧入射，使 用遮光膜2作為遮光罩幕，而可只有選擇性地曝光光阻膜 3,的周緣部分3a。亦即，來自光源5的光束，藉由利用遮 :膜2遮盍，而不會到達光阻膜3的中央部分。另一方面， 來自光源5的光束’通過遮光膜2的外周側到達光阻膜3 的外周部分3a，而使得此部分％的光阻膜3感光。在此 種It况下’後述的後處理步驟中，或是後述的光罩的製造 乂驟中，也能夠使得光阻膜3的曝光的區域仏顯影，然後 再去除。 ' 2130-9139-PF；Ahddub 22 200827926 在此情況下’於透光性基板1上形成的遮光膜2的周 緣部分中，不足設計膜厚的膜厚的部分化，由於遮光不充 分，而通過來自光源的光束的一部分，而使得光阻膜3感 光。因此，光源5的發光光量，是應該為使得遮光膜2的 周緣部分的光阻膜3充分感光的程度的強度。相對於此， 於-有遮光膜2充分厚度的區域，由於來自光源$的光束 無法通過，而無法使得光阻膜3感光。 在此步驟’在光阻膜3的周緣部分3a曝光的光罩基板 中此光阻膜3的周緣部分3a被顯影，然後，再去除。再 者，在此光罩基板中的光阻膜3，藉由後述，光罩的製造 步驟中的顯影步驟’也可以同時顯影周緣部分％，而去除。 ,再者，針對於光阻膜3的周緣側的去除部分3a的選擇 |曝光纟可以不在光罩基板的製造步驟中進行，而在後 述的光罩的製造步财進行。具體而t，針對於光阻膜3 :選擇性曝光，與針對於光阻膜3的圖案料同時進行， 二者’在圖案描繪之前進行，或者也可以於圖案描繪之後 :。但是’針對於光阻膜3的選擇性的曝光，最好以上 迷的方式進行此一步驟。 [来置H上相各個步驟，而能夠製造本發明的光罩基板。 先罩的製造方法的實施形態] 以下，在各步驟順序說明本發明的光罩的製造方法。 光::藉由實施本發明的光罩製造方法，可製造本發明的 匕光罩裝&方法為使用上述本發明的光罩基板進行。 2130-9l39-PF;Ahddub 23 200827926 但是，此光罩的製造步驟之中進行光阻膜3的周緣 除部分3a的選擇性曝光時，為使用習知的光罩基板進〃 在此’習知的光罩基板是指，在形成於透 光膜2上，形成覆蓋此遮光膜2的光阻膜3，且在此二、、 膜3不進行任何的曝光。 [1]圖案描繪步驟 使用如上所述的光罩基板，視需要烘烤光阻膜，然 後，根據想要的圖案’在光阻膜3A上進行圖案描綠（選擇 性的曝光）。此圖案描繪，例.如可使用雷射插繪機進行'。 亚且，使用有採用電子線的描繪機時，為了防止透光 T基板1的電荷殘留（chargeup)，透光性基板i的周緣部 最好為導電性m使用雷射描繪機時，透光性美 板1的周緣部分不需要為導電性。因此，本發明之中，二 =光性基板1的周緣部分設置遮光膜2的非形成區域％ 時’適合使用雷射描緣機。 • 並且，上述光罩基板的製造步驟之中，不針對光阻膜 3的周緣侧的去徐部分進行選擇性的曝光。在此情況下，、 此步驟中針對光阻膜3圖案描緣的同時，或圖案描緣之 前’或者’圖案描繪之後可針對光阻屬3的周緣侧進㈣ #性的曝光。在此針對光阻膜3的周緣侧進行的選擇性的 曝光，與光罩基板的製造步驟之中說明的曝光相同。 [2 ]顯影以及飯刻處理步驟 將完成圖案描繪的光阻膜3A顯影，以形成光阻圖案。 再者，上述的光罩基板的製造步驟之中，只針對光阻膜3 213〇-9139-PF;Ahddub 24 200827926 的周緣部分3a進行曝光，在不進行去除的情況，此顯影步 驟之中，可去除曝光部分。Further, in this step, it is not performed until the predetermined region 3a of the photoresist film 3 is removed, and as shown in FIG. 3, the mask 3 and the light source 5 are used, and the region 3a is selectively selected. The exposure is also possible. That is, the light beam from the light source 5 is covered by the hood 4 without reaching the central portion of the photoresist film 3. On the other hand, the light beam of the source 5 passes through the mask: The outer peripheral side of the photoresist film 3 reaches the outer peripheral portion of the photoresist film 3, so that the photoresist film 3 of the film 3 & 3 is exposed. In this case, in the post-processing step described later, 'or' in the mask manufacturing step described later The exposed region 3a of the photoresist film 3 is developed and removed. "Furthermore" as shown in Fig. 4, the hood 4 is not used, and the light beam from the light source 5 is made of the light-transmitting substrate 1 The inside of the lc side is incident, and the light shielding film 2 is used as a light shielding mask, and only the peripheral portion 3a of the photoresist film 3 can be selectively exposed. That is, the light beam from the light source 5 is concealed by the mask 2 without reaching the central portion of the photoresist film 3. On the other hand, the light beam ' from the light source 5 passes through the outer peripheral side of the light shielding film 2 to the outer peripheral portion 3a of the photoresist film 3, so that this portion of the photoresist film 3 is exposed. In the post-processing step described later in this case, or in the manufacturing process of the mask described later, the exposed region of the resist film 3 can be developed and then removed. '2130-9139-PF; Ahddub 22 200827926 In this case, in the peripheral portion of the light-shielding film 2 formed on the light-transmitting substrate 1, the film thickness of the film thickness is insufficient, and the film thickness is insufficient due to insufficient light shielding. A portion of the light beam from the light source causes the photoresist film 3 to be sensitized. Therefore, the amount of light emitted from the light source 5 is such a degree that the photoresist film 3 on the peripheral portion of the light-shielding film 2 is sufficiently sensitized. On the other hand, in the region where the light-shielding film 2 has a sufficient thickness, since the light beam from the light source $ cannot pass, the photoresist film 3 cannot be made light-sensitive. In this step', the peripheral portion 3a of the photoresist film 3 is developed in the mask substrate exposed at the peripheral portion 3a of the photoresist film 3, and then removed. Further, the photoresist film 3 in the mask substrate can be removed by simultaneously developing the peripheral portion % by the development step ' in the manufacturing process of the mask. Further, the selection of the removed portion 3a on the peripheral side of the photoresist film 3 can be performed in the manufacturing process of the photomask substrate, and the manufacturing of the photomask described later can be carried out. Specifically, for the photoresist film 3: selective exposure is performed simultaneously with the pattern material for the photoresist film 3, both of which are performed before the pattern drawing, or may be after the pattern drawing: However, for the selective exposure of the photoresist film 3, it is preferable to carry out this step in the above manner. [The photomask substrate of the present invention can be manufactured by taking each step of the upper phase of H. Embodiment of Manufacturing Method of Shield] Hereinafter, a method of manufacturing the reticle of the present invention will be described in order of each step. Light: By carrying out the reticle manufacturing method of the present invention, the method of manufacturing the reticle hood of the present invention is carried out using the above-described reticle substrate of the present invention. 2130-9l39-PF; Ahddub 23 200827926 However, in the manufacturing step of the photomask, when the peripheral edge of the photoresist film 3 is selectively exposed, a conventional mask substrate is used. The mask substrate is formed on the light-transmissive film 2 to form a photoresist film 3 covering the light-shielding film 2, and the film 3 is not exposed to any exposure. [1] Pattern drawing step Using the mask substrate as described above, the photoresist film is baked as necessary, and then pattern greening (selective exposure) is performed on the photoresist film 3A in accordance with the desired pattern '. This pattern is depicted, for example, as can be done using a laser injector. In the case of using a drawing machine using an electron beam, in order to prevent charge charging of the light-transmitting T substrate 1, the peripheral portion of the light-transmitting substrate i is preferably electrically conductive. When a laser is used, the light is transmitted. The peripheral portion of the slab 1 does not need to be electrically conductive. Therefore, in the present invention, when the non-formation region % of the light-shielding film 2 is provided in the peripheral portion of the second light substrate 1, it is suitable to use a laser edger. Further, in the manufacturing process of the above-described mask substrate, selective exposure is not performed on the peripheral portion of the photoresist film 3 on the peripheral side. In this case, the patterning of the photoresist film 3 in this step, or the front or the pattern drawing of the pattern can be followed by the (four) exposure of the periphery of the photoresist 3 . Here, the selective exposure to the peripheral side of the photoresist film 3 is the same as that described in the manufacturing steps of the mask substrate. [2] Developing and cooking process step The photoresist film 3A which has been patterned is developed to form a photoresist pattern. Further, in the above-described manufacturing process of the photomask substrate, only the peripheral portion 3a of the photoresist film 3 213 〇 -9 139-PF and Ahddub 24 200827926 is exposed, and in the case where the removal is not performed, in the developing step, The exposed portion can be removed.
以如上所述形成的光阻圖案作為罩幕，藉由蝕刻處理 遮无膜2 ’以开> 成遮光膜圖案。餘刻處理的方式沒有特別 限制，然而例如可使用習知的溼蝕刻處理。此時，遮光膜 2的周緣部分2b沒有被光阻膜3A覆蓋，所以此周緣部分 2b可利用蝕刻處理去除。此時，遮光膜2的非形成區域％ 例如為，從透光性基板i的周緣的寬度為丨_至2〇mm。 藉由此步驟，形成於遮光膜2的厨，緣側的膜厚為不均 一，可去除較遮光膜2的設定膜厚不足的膜2b。如此，膜 厚不均一，且較遮光膜2的設定膜厚不足的膜2b為如上所 述在遮光膜2的濺鍍成膜時形成的。在此步驟之中，去除 的遮光膜2的周緣部分2b，例如為未滿遮光膜2的設定2 厚的98%的部分。如上所述，遮光膜2的設定膜厚例如為 80nm(800A)至150nm( 1 500A)的範圍内的既定的膜厚。， 弟b圖為,、具不本赉明的光罩中間體的構造的剖面圖 如此，籍由去除遮光膜2的周緣部分2b，可構成如 5圖所示具有沿著透光性基板]的主㈤ 部分的遮光膜Μ以及光阻膜3A的非形成區域^、如的 罩中間體。此光罩中間體之中’遮光膜2A以及光阻膜 的周緣的端面2Aa、3Aa與相對於透光性基板j的主表 la的垂直方向實質上為一致。 、 [3 ]光阻去除步驟 其次，利用習知的方法去除不 需要的光阻膜3A。藉此， 2130-9139-PF;Ahddub 25 200827926 可在透光性基板1上完成精緻地形成有圖案化的遮光膜2a 的光罩。此光罩在沿著透光性基板i的主表面1&的周緣的 部分，形成有遮光膜2A的非形成區域2a ^再者，此遮光 膜2A的周緣，亦即，面對非形成區域2a的遮光膜2的周 緣的端面2Aa為，針對此遮光膜2A的周緣部分進行蝕刻處 理的被蝕刻區域的界面，且從透光性基板i的主表面， 在此主表面la的垂直的方向，成為略為垂直向上的形狀。The photoresist pattern formed as described above is used as a mask, and the film is masked by etching to form a light-shielding film pattern. The manner of the residual treatment is not particularly limited, however, for example, a conventional wet etching treatment can be used. At this time, the peripheral portion 2b of the light shielding film 2 is not covered by the photoresist film 3A, so this peripheral portion 2b can be removed by an etching process. At this time, the non-formation region % of the light-shielding film 2 is, for example, a width from the periphery of the light-transmitting substrate i of 丨_ to 2 〇 mm. By this step, the thickness of the kitchen formed on the light-shielding film 2 is not uniform, and the film 2b having a set film thickness smaller than that of the light-shielding film 2 can be removed. As described above, the film 2b having a film thickness which is not uniform and which is smaller than the set film thickness of the light-shielding film 2 is formed as described above at the time of sputtering deposition of the light-shielding film 2. In this step, the peripheral portion 2b of the removed light-shielding film 2 is, for example, a portion which is less than 98% of the setting 2 thickness of the light-shielding film 2. As described above, the set film thickness of the light-shielding film 2 is, for example, a predetermined film thickness in the range of 80 nm (800 A) to 150 nm (1,500 A). In the figure of b, the cross-sectional view of the structure of the mask intermediate having no such ambiguity is as follows. By removing the peripheral portion 2b of the light-shielding film 2, it can be configured to have a light-transmissive substrate as shown in FIG. The light-shielding film of the main (5) part and the non-formation area of the photoresist film 3A, such as the cover intermediate. Among the mask intermediates, the end faces 2Aa and 3Aa of the light-shielding film 2A and the peripheral edge of the photoresist film substantially coincide with the vertical direction of the main surface la of the light-transmitting substrate j. [3] Photoresist removal step Next, the unnecessary photoresist film 3A is removed by a conventional method. Thereby, 2130-9139-PF; Ahddub 25 200827926 can complete the reticle in which the patterned light-shielding film 2a is delicately formed on the light-transmitting substrate 1. The mask is formed with a non-formation region 2a of the light-shielding film 2A along a portion along the periphery of the main surface 1& of the light-transmitting substrate i. Further, the periphery of the light-shielding film 2A, that is, the non-formation region is faced. The end surface 2Aa of the peripheral edge of the light-shielding film 2 of 2a is the interface of the etched region where the peripheral portion of the light-shielding film 2A is etched, and from the main surface of the light-transmitting substrate i, in the vertical direction of the main surface la , becomes a slightly vertical upward shape.
第6圖為顯示本發明光罩的要部的構造的剖面圖。 亦即，如帛6圖所，示，在此光罩之中，在遮光膜2八相 鄰非形成區域2a的周緣的端面2Aa附近形成有—膜厚未滿 ⑽遮光m2A的設定膜厚的區域，為此遮光膜^與非形成 區域2a的邊界的距離(寬度)未滿5〇〇//m的區域。再者， 膜厚未滿遮光m 2A的設定膜厚的98%的區域較佳為寬度 1〇〇“以下的區域’更佳為寬度5Mm以下的區域。 [圖案的轉移方法的實施形態] 此圖案的轉移方法之中，使用如上述製造的光罩，金 :被轉移體進行圖案曝光。被轉移體例如為液晶顯示器用 :電衆顯不器面板用的玻璃基板、彩色據光片等，其用缝 沒有限制。 再者，本發明的光罩’沒有尺寸的限制。但是，在 =邊以上的尺寸的情況，特別是—邊5咖^以 的情況的大型化的光罩之中，發明的效果特別顯著。 :即，隨著顯示畫面的大面積化，使用於液晶顯示器 示面板等的顯示裝置的製造光罩，具有大型化的 26 2130〜9l39~PF;Ahddub 200827926 向其-人，光罩大型化的冑，會變得又 光膜的剝離而引a & 重’所以因遮 J離而弓丨起的粒子產生的風險會提高 罩¥，有必要使用夾持的治具來保持蘚m 然而，光覃合 饰符％固。 愈重’則治具與接觸部，亦即在外周n# 重也變得侖士 „ 门刀的何 〜，斤以此部分的遮光膜2變得命 因此，本發明在 仔愈-易剝離。 果。 型化的先罩之中，可發揮特別顯著的效 實施例： 以下’說明本發明的實施例。 首先如第1 (a)圖所示，使用濺鍍法在已研廚 、*玻璃構成的透光性基板1的主表ΦU上，成膜 鉻為主成知而膜厚為1〇〇nm(1〇〇〇A)的遮光膜2。此時、 從透光性基板1的主表面h的周緣3職寬度的部分，夢由 =錢成膜時配置料治具，可遮蔽鉻而成為非形成㈣ 其-人’如弟1(b)圖所示’可使用覆蓋塗佈機，在整個 f光性基板1的主表面1a上’塗佈膜厚1·。“的光阻膜 再進行乾燥後供烤。接著，如第1(c)圖所示，去除從 透光性基-板1的周、緣6職的寬度的光阻膜3的周緣部分 如第4圖所示，去除方法可制，由透光性基板！的 晨面lc侧曝光’再藉由顯影以去除光阻膜3的方法。 如上所述，製造出光罩基板。 其次，使用描1會機針對此光罩基板描緣液晶顯示面板 的裝置基板製造用的圖案。描繪後’藉由習知的步驟，進 27 2130-9l39-PF;Ahddub 200827926 行顯影以及蝕刻，以在遮光膜2A形成圖案。接著，如第5 圖所示，去除不需要的光阻膜3A。 如上所述，製造出光罩。 藉由目視檢查得到的光罩，遮光膜2A的周緣，亦即， 遮光膜2A與非形成區域2a的邊界2Aa會成為明確的邊界 線。再者’以顯微鏡以及接觸式膜厚測定機測定遮光膜2A 的周緣的形狀，在遮光膜2A的周緣附近，膜厚未滿設定膜 厚lOOnm(lOOOA)的98%的部分的寬度為5(Mm以下。亦即， 遮光膜2A的周緣的端面2Aa，從透光性基板〗的主表面 1 a，成為略為垂直向上的形狀。 接著，進行洗淨。洗淨步驟中，以洗淨後的檢查，3 # m 以上的異物的數目為0(零）時，是使用洗淨終了的基準進 仃，然而，藉由1次的洗淨，可通過此基準。之後，形成 表層（pellicle)。 另方面，比較例是以濺鍍成膜遮光膜2的周緣部分 瞻 2b後的狀悲，直接製作光罩。此光罩以目視觀察在遮光膜 2的周緣，lmm左右的膜厚不足的部分以。使用此光罩， 形成表層。在表層形成前的異物確認，可確認遮光膜2的 周緣附近的衫響，且在表層形成步驟終了時，有需要名次 的洗淨。 【圖式簡單說明】 第1(a)圖至第1(c)圖顯示為本發明的光罩基板的製 造方法的各個步驟的剖面圖。 2130-9139-PF;Ahddub 28 200827926 第2圖顯示為在整個透光性基板的主表面形成遮光膜 的光罩基板的構造的剖面圖。 第3圖顯示為在針對光阻膜的周緣部分進行曝光的狀Fig. 6 is a cross-sectional view showing the structure of a main portion of the photomask of the present invention. In other words, in the mask, in the vicinity of the end surface 2Aa of the peripheral edge of the light-shielding film 2 adjacent to the non-formation region 2a, a film thickness of a film thickness of less than (10) light shielding m2A is formed. The region is a region where the distance (width) of the light-shielding film and the boundary of the non-formed region 2a is less than 5 Å/m. In addition, the region where the film thickness is less than 98% of the set film thickness of the light-shielding m 2A is preferably a region having a width of 1 〇〇 "the following region" is preferably a region having a width of 5 Mm or less. [Embodiment of the pattern transfer method] In the method of transferring the pattern, the gold is used to perform pattern exposure using the photomask manufactured as described above, and the object to be transferred is, for example, a glass substrate for a liquid crystal display panel, a color light-receiving sheet, or the like. In addition, the reticle of the present invention is not limited in size. However, in the case of a size larger than the side, particularly in the case of a large-sized reticle in the case of a side, The effect of the invention is particularly remarkable. That is, as the display screen is increased in area, the photomask used for a display device such as a liquid crystal display panel has a large size of 26 2130 to 9l39 to PF; Ahddub 200827926 to the person If the size of the mask is large, it will become a peeling of the light film and lead to a & heavy weight. Therefore, the risk of particles that are picked up by the cover will increase the cover. It is necessary to use the clamp. To keep 藓m, however, the light fits the charm %固固. The heavier 'the jig and the contact part, that is, in the outer periphery n# heavy also become the singer „ door knives ~, jin this part of the light-shielding film 2 becomes the life, therefore the invention is in the - Easy to peel off. fruit. Among the sized hoods, particularly remarkable effects can be exhibited. Embodiments hereinafter are described as examples of the present invention. First, as shown in Fig. 1(a), on the main surface ΦU of the light-transmissive substrate 1 made of the kitchen and the * glass, the film formation chromium is mainly known and the film thickness is 1 〇〇 nm. (1〇〇〇A) light-shielding film 2. At this time, from the portion of the width of the peripheral surface 3 of the main surface h of the light-transmitting substrate 1, when the dream is formed by the film formation, the material can be shielded from chrome and formed into a non-formation. (4) The person-like person 1 (b) In the figure, 'the coating thickness can be 'coated on the main surface 1a of the entire f-light substrate 1' using a cover coater. "The photoresist film is dried and then baked. Then, as shown in Fig. 1(c), the peripheral portion of the photoresist film 3 having a width from the circumference of the light-transmitting substrate-plate 1 is removed. As shown in Fig. 4, the removal method can be carried out by exposing the morning surface lc side of the light-transmitting substrate! to the method of removing the photoresist film 3 by development. As described above, the photomask substrate is manufactured. 1 The machine draws a pattern for the manufacture of the device substrate of the liquid crystal display panel for the reticle substrate. After the drawing, 'by the conventional steps, the image is developed into the 27 2130-9l39-PF; the Ahddub 200827926 is etched and etched to the light-shielding film. 2A is patterned. Then, as shown in Fig. 5, the unnecessary photoresist film 3A is removed. As described above, a photomask is manufactured. The photomask obtained by visual inspection, the periphery of the light-shielding film 2A, that is, the light-shielding film The boundary 2Aa between the 2A and the non-formation region 2a is a clear boundary line. The shape of the periphery of the light-shielding film 2A is measured by a microscope and a contact film thickness measuring device, and the film thickness is not set near the periphery of the light-shielding film 2A. The width of the 98% portion of the film thickness lOOnm (100OA) is 5 (Mm or less) In other words, the end surface 2Aa of the peripheral edge of the light-shielding film 2A has a shape that is slightly vertically upward from the main surface 1a of the light-transmitting substrate. Next, the cleaning is performed. In the cleaning step, the inspection after washing is performed, 3 When the number of foreign objects above #m is 0 (zero), the reference is used for the end of the cleaning. However, the cleaning can be performed once by one wash. After that, a pellicle is formed. In the comparative example, the mask was directly formed after the peripheral portion of the film-forming light-shielding film 2 was formed, and the mask was directly formed. The mask was visually observed on the peripheral edge of the light-shielding film 2, and the film thickness of about 1 mm was insufficient. The mask is formed into a surface layer. The foreign matter before the formation of the surface layer is confirmed, and the shirting sound in the vicinity of the periphery of the light-shielding film 2 can be confirmed, and when the surface layer forming step is completed, it is necessary to wash the order. [Simplified illustration] (a) to 1(c) are cross-sectional views showing respective steps of a method of manufacturing a photomask substrate of the present invention. 2130-9139-PF; Ahddub 28 200827926 FIG. 2 is a view showing the entire translucent substrate. The structure of the reticle substrate on which the main surface forms a light shielding film Sectional view. Figure 3 shows the exposure for the peripheral portion of the photoresist film.
態的剖面圖D …第4圖顯示為在使用遮光膜，而在光阻膜的周緣部分 進行曝光的狀態的剖面圖。 第5圖顯示為本發明的光罩中 ^ 旱T間體的構造的剖面圖。 第6圖顯示為本發明的光罩Fig. 4 is a cross-sectional view showing a state in which a light-shielding film is used and exposure is performed on a peripheral portion of the photoresist film. Fig. 5 is a cross-sectional view showing the structure of the dry T-space in the photomask of the present invention. Figure 6 shows the mask of the present invention
面.，圖。 罩令間體的要部的構造的剖 【主要元件符號說明】 ia〜主表面； lc〜裏面； 2A~^光膜； 2a~非形成區域； 3〜光随膜； 3Aa〜端面； 3b〜去除部分； 5〜光源。 29 1〜透光性基板； lb〜端面； 2〜遮光膜； 2Aa〜端面； 2b〜厚度不均一的膜； 3A〜光阻膜； 3a〜周緣部分； 4;〜遮光罩幕; 2130-9139->PF；AhddubFace., figure. Section of the main part of the cover body [Description of the main components] ia ~ main surface; lc ~ inside; 2A ~ ^ light film; 2a ~ non-formed area; 3 ~ light with film; 3Aa ~ end face; 3b ~ Remove part; 5 ~ light source. 29 1 ~ light transmissive substrate; lb ~ end face; 2 ~ light shielding film; 2Aa ~ end face; 2b ~ film of non-uniform thickness; 3A ~ photoresist film; 3a ~ peripheral portion; 4; ~ hood; 2130-9139 ->PF;Ahddub
Claims (1)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006260826A JP5015537B2 (en) | 2006-09-26 | 2006-09-26 | Photomask manufacturing method and pattern transfer method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200827926A true TW200827926A (en) | 2008-07-01 |
| TWI422960B TWI422960B (en) | 2014-01-11 |
Family
ID=39255760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096134033A TWI422960B (en) | 2006-09-26 | 2007-09-12 | Mask substrate and manufacturing method thereof, mask and manufacturing method thereof, mask mask, and pattern transfer method |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5015537B2 (en) |
| KR (2) | KR20080028305A (en) |
| CN (1) | CN101154032B (en) |
| TW (1) | TWI422960B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI596425B (en) * | 2013-11-25 | 2017-08-21 | Ｈｏｙａ股份有限公司 | Method of manufacturing a photomask, photomask, pattern transfer method and method of manufacturing a display |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012071258A (en) * | 2010-09-29 | 2012-04-12 | Casio Computer Co Ltd | Cleaning apparatus and cleaning method |
| JP6381961B2 (en) * | 2014-05-08 | 2018-08-29 | Hoya株式会社 | Manufacturing method of mask blank with resist film, manufacturing method of transfer mask, mask blank with resist film, manufacturing method of mask blank, and mask blank |
| JP7354032B2 (en) * | 2020-03-19 | 2023-10-02 | Hoya株式会社 | Mask blank, transfer mask, and semiconductor device manufacturing method |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01217349A (en) * | 1988-02-25 | 1989-08-30 | Dainippon Printing Co Ltd | Blank plate, photomask using blank plate, and their manufacture |
| JPH02161433A (en) * | 1988-12-14 | 1990-06-21 | Fujitsu Ltd | Photomask substrate |
| JPH0440456A (en) * | 1990-06-06 | 1992-02-10 | Matsushita Electron Corp | Manufacture of photomask |
| JPH06250380A (en) * | 1993-02-26 | 1994-09-09 | Hoya Corp | Method for removing unnecessary film and its device, and production of phase shift mask blank |
| KR970009825B1 (en) * | 1993-12-31 | 1997-06-18 | 현대전자산업 주식회사 | Half-tone phase shift mast and fabrication method |
| JP2863131B2 (en) * | 1996-05-08 | 1999-03-03 | ホーヤ株式会社 | Method of manufacturing photomask blanks |
| JP2001230197A (en) * | 2000-02-17 | 2001-08-24 | Sigma Meltec Ltd | Method for removing edge film and method for electron beam lithography |
| JP3441711B2 (en) * | 2000-11-02 | 2003-09-02 | Ｈｏｙａ株式会社 | Halftone type phase shift mask and halftone type phase shift mask blank |
| JP2002343704A (en) * | 2001-05-17 | 2002-11-29 | Nec Corp | Method and system for forming coating film |
| CN100580549C (en) * | 2002-12-03 | 2010-01-13 | Hoya株式会社 | Photomask blank and photomask |
| JP3939670B2 (en) * | 2003-03-26 | 2007-07-04 | シャープ株式会社 | Photomask pair for flare measurement, flare measurement mechanism, and flare measurement method |
| US7323276B2 (en) * | 2003-03-26 | 2008-01-29 | Hoya Corporation | Substrate for photomask, photomask blank and photomask |
| JP4210166B2 (en) * | 2003-06-30 | 2009-01-14 | Ｈｏｙａ株式会社 | Gray-tone mask manufacturing method |
| JP4587806B2 (en) * | 2004-12-27 | 2010-11-24 | Ｈｏｙａ株式会社 | Halftone phase shift mask blank and halftone phase shift mask |
-
2006
- 2006-09-26 JP JP2006260826A patent/JP5015537B2/en active Active
-
2007
- 2007-09-12 TW TW096134033A patent/TWI422960B/en active
- 2007-09-21 KR KR1020070096367A patent/KR20080028305A/en active Search and Examination
- 2007-09-26 CN CN2007101543876A patent/CN101154032B/en active Active
-
2014
- 2014-08-19 KR KR1020140108005A patent/KR20140118942A/en not_active Application Discontinuation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI596425B (en) * | 2013-11-25 | 2017-08-21 | Ｈｏｙａ股份有限公司 | Method of manufacturing a photomask, photomask, pattern transfer method and method of manufacturing a display |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20140118942A (en) | 2014-10-08 |
| CN101154032A (en) | 2008-04-02 |
| JP2008083194A (en) | 2008-04-10 |
| CN101154032B (en) | 2013-05-01 |
| TWI422960B (en) | 2014-01-11 |
| KR20080028305A (en) | 2008-03-31 |
| JP5015537B2 (en) | 2012-08-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8048598B2 (en) | Method of fabricating a halftone mask having a shielding pattern and plural overlapping halftone patterns of different widths | |
| TWI461837B (en) | Multi-gradation photomask and method of manufacturing the same, and pattern transfer method | |
| TWI387843B (en) | A mask substrate, a mask, and a method for manufacturing the same | |
| JPH09106064A (en) | Manufacture of halftone phase inversion mask | |
| FR2873826A1 (en) | MATRIX SUBSTRATE FOR A LIQUID CRYSTAL DISPLAY AND METHOD OF MANUFACTURING THE SAME | |
| TW546702B (en) | Method of manufacturing an electronic device and a semiconductor integrated circuit device | |
| WO2013170608A1 (en) | Mask plate and method for manufacturing array substrate | |
| TW200827926A (en) | Photomask blank, method for manufacturing photomask blank, photomask, method for manufacturing photomask, photomask intermediate, and method for transferring pattern | |
| CN107086181A (en) | Thin film transistor (TFT) and preparation method thereof, array base palte and display | |
| JP2008166761A (en) | Image sensor and manufacturing method thereof | |
| TW200540918A (en) | Color image sensor device and fabrication method thereof | |
| JPH02138736A (en) | Etching of light-shielding thin film | |
| JP2020519958A (en) | Photomask structure and array substrate manufacturing method | |
| JP4834235B2 (en) | Photo mask for gray tone exposure | |
| JP5079330B2 (en) | Manufacturing method of liquid crystal display device | |
| KR100293719B1 (en) | Image sensor with improved light transmission for short wavelength light and its manufacturing method | |
| US20050255389A1 (en) | Phase shift mask and method of producing the same | |
| CN110634748B (en) | Preparation method of thin film transistor and thin film transistor | |
| TW202101030A (en) | Photoresist loading solutions for flat optics fabrication | |
| TW200844644A (en) | Method of making a grayscale reticle using step-over lithography for shaping microlenses | |
| JP2010204264A (en) | Method for manufacturing photomask having patterns on both surfaces thereof | |
| JP6805315B1 (en) | Patterned light guide structure and how to form it | |
| JPS6156349A (en) | Manufacture of photomask | |
| JPH04324445A (en) | Mask for exposing and production thereof | |
| KR100575000B1 (en) | Photomask for manufacturing semiconductor device and method of forming the same |