CN100580549C - Photomask blank and photomask - Google Patents
Photomask blank and photomask Download PDFInfo
- Publication number
- CN100580549C CN100580549C CN200380100354A CN200380100354A CN100580549C CN 100580549 C CN100580549 C CN 100580549C CN 200380100354 A CN200380100354 A CN 200380100354A CN 200380100354 A CN200380100354 A CN 200380100354A CN 100580549 C CN100580549 C CN 100580549C
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- Prior art keywords
- photomask
- blank
- light
- transmitting substrate
- substrate
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000002245 particle Substances 0.000 abstract description 10
- 230000002093 peripheral effect Effects 0.000 abstract description 8
- 238000010422 painting Methods 0.000 abstract description 3
- 230000000903 blocking effect Effects 0.000 abstract 3
- 238000000034 method Methods 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000005530 etching Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000000227 grinding Methods 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000007591 painting process Methods 0.000 description 2
- 230000000803 paradoxical effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 238000013518 transcription Methods 0.000 description 1
- 230000035897 transcription Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
- G03F7/2026—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
In handling a blank for which a large and minute pattern is required, the generation of particles is prevented. A photomask blank having a light blocking film (2) formed only on areas excluding the peripheral edge (IS) on the main surface of a light-permeable substrate (1), the peripheral edge (IS) being the mask-unformed region of the light blocking film (2), the photomask blank being characterized in that the light-permeable substrate (1) is 300 millimeters or more in each side and the width of the film-unformed region (S) is not less than 3 millimeters and in that the light blocking film (2) is patterned by using laser painting.
Description
Technical field
The present invention relates in etching technique, be used in the figure transcription mask and as the photomask blank of its blank master.
Background technology
The method for making of mask is as follows: at first by acquisition light-transmitting substrates (grinding step) such as precise finiss quartz glasss, by make figure formation on the first type surface of acquired transparent substrates for example is the photomask (film formation process) of principal ingredient with chromium, painting erosion resistant agent film (painting process) on established photomask, selectively the resist film (exposure process) that exposes and be coated with is made photomask figure (erosion agent operation) by carry out etching in the etchant resist that has exposed that develops.This intermediate product through the photomask of above-mentioned film formation process acquisition is that the blank master calls photomask blank.
Yet because photomask no matter, or photomask blank will be controlled the peripheral part and the side surface part of light-transmitting substrate, so there is the problem of peeling off easily in the photomask that forms when carrying them between operation on the part of controlling as this.When photomask peels off, attached on the photomask figure time, will on this figure, produce defectives such as photomask is residual as particle, and will increase clean number of times inevitably mask or blank in order to remove this overburden.
At this, do not form photomask by peripheral part at photomask as far as possible, making overburden (particle) minimizing of the photomask that takes place when handling is known (referenced patent file 1,2).These technology are applicable to that employing is the photomask of the etching technique of process object with silicon chip etc.
In addition, above-mentioned technology is to inapplicable with the occasion of the fine mask graph of electron ray drawing formation in exposure process.Its reason is: describing the occasion of special Micropicture, carrying out electron ray in above-mentioned exposure process draws, cause that by electron ray the charging of substrate increases when preventing to describe fine figure with electron ray, and also must be with the photomask conduction (arrangement conductive pin) with electric conductivity on the peripheral part of blank.
For example for for the photomask of using in the manufacturing of display device such as liquid crystal display, be to carry out electronic palette in the above-mentioned exposure process in the manufacture process of this photomask along with the height of this display device becomes more meticulous etc. and requires figure miniaturization, present present situation.
Patent document 1, spy open clear 60-194446 communique (the 2nd page, Fig. 1)
Summary of the invention
Yet, the mask of in the manufacturing of the display device of liquid crystal display etc., using, in recent years on the one hand figure to the high direction progress that becomes more meticulous, the tendency that maximization is arranged along with the large tracts of landization of display frame on the other hand, because large-scale mask, just thick more heavy more, so overburden generation problem is on the rise.That is to say that large-scale mask often utilizes when being subjected to handling and inserts anchor clamps and maintain its peripheral part, because mask is heavy more, the load that drops on contact site with anchor clamps and be on the peripheral part is also big more, so the photomask of this part is peeled off easily.
And someone thinks, not only pass through the first type surface of mirror ultrafinish substrate, even the also side surface part by the mirror ultrafinish substrate, make the adhesion of the photomask of the side surface part formation of when film forming, stretching increase and make the minimizing of peeling off of photomask, thereby can on the photomask of semiconductor manufacturing usefulness, make the mirror ultrafinish practicability of the side surface part of substrate.Therefore, the example that the detection of carrying out the photomask in the exposure device (mask centralizer) on side surface part is arranged on the large-scale mask that display device is used etc., can not detection of reflected light such problem is arranged when the side surface part of substrate is minute surface and when the personnel selection handgrip is held the side surface part of substrate when treatment substrate, (about 1Kg～15Kg) is when the side surface part of substrate is minute surface and make the such problem of danger increase of landing because the weight of substrate is big.Thereby must become uneven surface to side surface part.So easier peeling off of photomask of the side surface part in large-scale photomask.
Above-mentioned such problem especially severe on the formed large-scale blank of high-precision figure that requires in recent years that overburden takes place.
Therefore, the present invention can be prevented at the blank that handle to form large-scale and fine mask graph provide and the technology of the generation of overburden particle during with the photomask of this blank manufacturing as purpose.
According to the present invention, photomask blank with following feature is provided, on the part the periphery except that the first type surface of light-transmitting substrate on only, form photomask and with the photomask blank that do not become diaphragm area formation of this circumference as photomask, it is more than the 300mm on one side for the size of above-mentioned light-transmitting substrate, and the width in above-mentioned not film forming district is more than the 3mm.
According to photomask blank of the present invention, preferably.Above-mentioned photomask is made figure with laser drawing.
In addition, the present invention also provides the photomask made from above-mentioned photomask blank.
In addition, according to photomask blank of the present invention, the surfaceness (Ra) of the side surface part on the corresponding above-mentioned light-transmitting substrate is the photomask of the uneven surface of 0.05～0.3 μ m, and effect is effective especially.
Description of drawings
Fig. 1 is the figure of the photomask blank of pattern ground expression embodiment, and wherein (a) is planimetric map, (b) is sectional view.
Fig. 2 is the enlarged drawing of the photomask blank circumference of pattern ground expression embodiment.
Embodiment
Fig. 1 is the figure of photomask blank of expression embodiment, and this photomask blank forms photomask 2 on the part the circumference 1S except that the first type surface of light-transmitting substrate 1 on only, and this periphery 1S is the not film forming district formation as photomask 2.
Light-transmitting substrate 1 is the substrate to the exposure substantial transparent.This light-transmitting substrate 1 is looked on the plane and is formed rectangle or square shape, and its size is to be more than the 300mm, to that is to say that two relative at least in four limits of rectangular shape or square shape limits are more than the 300mm on one side.In addition, each limit is more than the 300mm, is that more large-scale more than the 300mm is more effective to photomask entirely to four limits in four limits of rectangular shape or square shape promptly.Large-scale photomask so preferably is used in the manufacturing of liquid crystal indicator etc. for example.Specifically the size as light-transmitting substrate can be made for 330 * 450[mm], 390 * 610mm, 500 * 750[mm], 520 * 800[mm] or more than it.
In addition, the thickness of light-transmitting substrate 1 is not specially limited, and there are the tendency of thickening in substrate that the high precision mask of demanding flatness is used as photomask of the present invention and the big substrate of size.In one embodiment, be the thickness setting of light-transmitting substrate 1 5～15mm.
In addition, the width A (with reference to Fig. 2) of the not film forming district 1S on the first type surface of light-transmitting substrate 1 is more than the 3mm, and preferably 5mm also can more than this.But the width A of film forming district 1S preferably is not set at drawing with the what is called of the photomask of this blank manufacturing and guarantees the value that the district does not overlap.Specifically, when draw guaranteeing that the district is the district of removing beyond the 10mm from all end faces of light-transmitting substrate 1, preferably will not become the width A of mould district 1S to be set in below the 10mm.
In addition, in one embodiment, be 5 ± 1mm with the width setup of film forming district 1S not.
Photomask 2 is the exposures of shading basically, constitutes with metals such as for example chromium.This photomask also can be to have the multilayer film that contains multi-ply constructions such as preventing reflection horizon and semi-transparent photosphere or successive layers structure in addition.At this moment be meant these all layers as photomask 2.These photomask 2 usefulness are drawn by the figure of laser drawing device and are made figure.Promptly this photomask blank is that laser drawing is used.
Below describe with regard to the manufacture method of this photomask blank with the method for the photomask of this blank manufacturing.
Grinding step
At first, behind precise finiss quartz glass etc., carry out chamfering, obtain the light-transmitting substrate 1 of the square size of seeing from the plane that long 300mm is above, wide 300mm is above.Therefore the side surface part (end face 1T and chamfered section 1C) of light-transmitting substrate 1 does not need special precise finiss, can be coarse state (with reference to Fig. 2) yet.Even end face 1T and chamfered section 1C are coarse state, because on these parts, do not form photomask 2, so can not take place to peel off attached on the mask graph face because of this photomask 2.In addition, if consider the difficulty of sliding when operation, then preferably more than 0.05 μ m, preferred is more than 0.1 μ m to the surfaceness of the side surface part of substrate, particularly end face (Ra), most preferably more than 0.15 μ m.In addition, if the side surface part of substrate is too coarse, also there is the such problem of the potential particle of imbedding in the groove that occurs in when waiting of cleaning.If consideration this point, the side surface part of substrate particularly the surfaceness of end face (Ra) preferably below 0.3 μ m, more preferably below 0.25 μ m, most preferably below 0.2 μ m.Can be undertaken by the control Ginding process in order to obtain the side that surfaceness (Ra) is 0.05～0.3 μ m, for example can obtain by the diamond cutter grinding that is used in the granularity of #700～#2400 in the diamond cutter (imbedding the colyliform grinding wheel of the diamond particles of predetermined roughness).
In addition, the width B of chamfered section 1C (with reference to Fig. 2) can be set at 0.3mm～1.3mm.
Film formation process
Then formation photomask 2 in the district the circumference 1S on the first type surface that only removes the light-transmitting substrate 1 that obtains is the district that comprises above-mentioned end face 1T and chamfered section 1C at this so-called circumference 1S.
In order to form photomask 2, can use sputter, sputter can be carried out at the state that keeps this light-transmitting substrate 1 keeping anchor clamps to cover the not state of film forming district 1S with not shown frame shape.Because by keep can not adhering to the particle of sputtering target in the district that anchor clamps cover at the frame shape on the first type surface of light-transmitting substrate 1, institute is so that this district becomes not film forming district 1S like this.At this moment, because so that film forming face (first type surface) keeps this light-transmitting substrate 1 towards the mode of below, so can reduce the attachment phenomenon of particle on this film forming face.
In addition, keep anchor clamps by the member with conduction as this shape, the grounding parts during spatter film forming is selected in this support body and keeps can preventing paradoxical discharge on the anchor clamps.Because this not the width A of film forming district 1S be set at more than the 3mm, so can accordingly the frame shape be kept the width setup of anchor clamps more than 3mm with it.Because can when sputter, guarantee sufficient ground connection,, consequently can obtain to make final yield rate to improve such effect so can prevent paradoxical discharge really.
Finish the photomask blank of present embodiment through above operation.
Painting process
Then, on established photomask 2, utilize the spin-coating method painting erosion resistant agent.At this used resist is the resist that laser drawing is used, and can enumerate the NPR3510DG of long Lai Chanyeshe system etc. particularly.
Exposure process
Then behind the resist film that oven dry has been coated with, selectively expose by laser drawing.Because at this moment laser drawing does not need to carry out in a vacuum as electron ray is drawn, can in atmosphere, carry out, the advantage that just can finish need not be installed on a large scale so have, as laser drawing device, the LRS of MICRONIC society system etc. can be enumerated particularly in addition in this usefulness.
Etching work procedure
Then the resist film that has exposed by developing forms the resist figure, by this resist figure as mask etching light photomask 2, form the photomask figure.Remove this resist figure then.Thereafter the photomask of present embodiment is finished in the cleaning of being scheduled to.
Can obtain following effect according to present embodiment.
(1) uses as laser drawing because of the photomask blank of present embodiment, can prevent that the problem that the discharge in drawing of in the past electron ray increases from taking place, so even the size one length of side is above large-scale blank of 300mm and film forming district 1S wide for also there not being any obstacle more than the 3mm not.
(2) weight of (hereinafter referred to as photomask etc.) is big and thickness is thick because large-scale photomask blank or photomask, so when carrying, must firmly maintain it, because the width of the not film forming district 1S of photomask 2 is designed to more than the 3mm, even and when the state of controlling end face 1T and chamfered section 1C, 1C with staff etc. was carried this photomask etc., hand that also can prevent this people really etc. touched on the photomask 2.Take place from the problem of peeling off that can prevent photomask 2 really.
(3) in addition, even with not only will also will carry this photomask etc. to the end face 1T of light-transmitting substrate 1 and chamfered section 1C, 1C to circumference as the maintenance anchor clamps of maintaining part the time, because can guarantee fully that this maintaining part is more than 3mm, take place so can prevent the problem of peeling off of photomask 2 really, can stablize simultaneously and keep massive photomask etc. securely.
(4) such as previously discussed, the generation source of having eliminated small foreign matter (particle) of peeling off because of the outer peripheral portion by preventing photomask 2, thereby can prevent on the mask graph face of foreign matter attached to photomask etc., therefore can high finished product rate ground make the photomask that do not have defective etc.Therefore, photomask of the present invention etc. are suitable as that mask graph will be through meticulous and strict especially defect inspection, and because mask size is very big, it is high often to be short of incidence, for example makes among the TFT (film elaboration pipe) and uses mask.
(5) in addition, be essential wash number because can reduce the past, so can improve the first-time qualification rate of the manufacturing of this photomask etc. for the photomask of removing foreign matter etc.
In addition, though be to be that rectangle is illustrative with transparent substrates 1 in embodiment, this transparent substrates also can square.
Industrial applicibility
The present invention can prevent from taking place particle when the blank of the big and meticulous figure of processing requirements.
Claims (2)
1, a kind of photomask blank, only the part except circumference on the first type surface of light-transmitting substrate forms photomask and with the not film forming district of this circumference as photomask, it is characterized in that:
Above-mentioned light-transmitting substrate is that four limits are above rectangle or square of 300mm,
The width in above-mentioned not film forming district is 3～10mm,
The surfaceness of the side surface part of above-mentioned light-transmitting substrate (Ra) is 0.05～0.3 μ m,
Above-mentioned photomask is made figure by laser drawing.
2, a kind of photomask is characterized in that: described photomask forms with the described photomask blank manufacturing of claim 1.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002350838 | 2002-12-03 | ||
| JP350838/2002 | 2002-12-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1692312A CN1692312A (en) | 2005-11-02 |
| CN100580549C true CN100580549C (en) | 2010-01-13 |
Family
ID=32463124
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200380100354A Expired - Lifetime CN100580549C (en) | 2002-12-03 | 2003-11-28 | Photomask blank and photomask |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPWO2004051369A1 (en) |
| KR (1) | KR100779956B1 (en) |
| CN (1) | CN100580549C (en) |
| TW (1) | TWI226971B (en) |
| WO (1) | WO2004051369A1 (en) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006068143A1 (en) | 2004-12-24 | 2006-06-29 | Matsushita Electric Industrial Co., Ltd. | Rechargeable battery with nonaqueous electrolyte |
| US8187748B2 (en) | 2004-12-24 | 2012-05-29 | Panasonic Corporation | Non-aqueous electrolyte secondary battery |
| CN1841189A (en) * | 2005-03-30 | 2006-10-04 | Hoya株式会社 | Mask blank glass substrate manufacturing method, mask blank manufacturing method, mask manufacturing method, mask blank glass substrate, mask blank, and mask |
| WO2007099910A1 (en) * | 2006-02-28 | 2007-09-07 | Hoya Corporation | Photomask blank and photomask, and their manufacturing method |
| JP5004283B2 (en) * | 2006-05-15 | 2012-08-22 | Ｈｏｙａ株式会社 | FPD device manufacturing mask blank, FPD device manufacturing mask blank design method, and FPD device manufacturing mask manufacturing method |
| JP5015537B2 (en) * | 2006-09-26 | 2012-08-29 | Ｈｏｙａ株式会社 | Photomask manufacturing method and pattern transfer method |
| JP2008151916A (en) * | 2006-12-15 | 2008-07-03 | Shin Etsu Chem Co Ltd | Method for recycling large-size photomask substrate |
| JP5410654B2 (en) * | 2007-04-09 | 2014-02-05 | Ｈｏｙａ株式会社 | Photomask blank manufacturing method, reflective mask blank manufacturing method, photomask manufacturing method, and reflective mask manufacturing method |
| JP5085966B2 (en) * | 2007-04-09 | 2012-11-28 | Ｈｏｙａ株式会社 | Photomask blank manufacturing method, reflective mask blank manufacturing method, photomask manufacturing method, and reflective mask manufacturing method |
| JP5046394B2 (en) * | 2007-08-07 | 2012-10-10 | Ｈｏｙａ株式会社 | Mask blank substrate manufacturing method, mask blank manufacturing method, mask manufacturing method, and mask blank substrate |
| JP5365137B2 (en) * | 2008-10-29 | 2013-12-11 | 東ソー株式会社 | Photomask substrate and manufacturing method thereof |
| JP4839411B2 (en) * | 2009-02-13 | 2011-12-21 | Ｈｏｙａ株式会社 | Mask blank substrate, mask blank and photomask |
| JP6428400B2 (en) | 2015-03-13 | 2018-11-28 | 信越化学工業株式会社 | Mask blanks and manufacturing method thereof |
| JP6948988B2 (en) * | 2018-06-26 | 2021-10-13 | クアーズテック株式会社 | Photomask substrate and its manufacturing method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1145124A (en) * | 1994-02-14 | 1997-03-12 | 纳幕尔杜邦公司 | Photomask blanks |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS593437A (en) * | 1982-06-30 | 1984-01-10 | Fujitsu Ltd | Substrate for manufacturing semiconductor device |
| JPS59172647A (en) * | 1983-03-22 | 1984-09-29 | Nec Corp | Manufacture of mask plate |
| JPS6029747A (en) * | 1983-07-28 | 1985-02-15 | Hoya Corp | Mask base plate for electronic device |
| JPS6039047U (en) * | 1983-08-24 | 1985-03-18 | 凸版印刷株式会社 | mask blank board |
| JPH03110438U (en) * | 1990-02-28 | 1991-11-13 | ||
| JPH05217831A (en) * | 1992-02-05 | 1993-08-27 | Seiko Epson Corp | Laser drawing apparatus |
-
2003
- 2003-11-28 CN CN200380100354A patent/CN100580549C/en not_active Expired - Lifetime
- 2003-11-28 KR KR1020047012772A patent/KR100779956B1/en active IP Right Grant
- 2003-11-28 WO PCT/JP2003/015287 patent/WO2004051369A1/en active Application Filing
- 2003-11-28 JP JP2004556864A patent/JPWO2004051369A1/en active Pending
- 2003-12-03 TW TW092134011A patent/TWI226971B/en not_active IP Right Cessation
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1145124A (en) * | 1994-02-14 | 1997-03-12 | 纳幕尔杜邦公司 | Photomask blanks |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2004051369A1 (en) | 2006-04-06 |
| WO2004051369A1 (en) | 2004-06-17 |
| TW200422771A (en) | 2004-11-01 |
| KR100779956B1 (en) | 2007-11-28 |
| TWI226971B (en) | 2005-01-21 |
| CN1692312A (en) | 2005-11-02 |
| KR20040091058A (en) | 2004-10-27 |
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