CN1841189A - Mask blank glass substrate manufacturing method, mask blank manufacturing method, mask manufacturing method, mask blank glass substrate, mask blank, and mask - Google Patents
Mask blank glass substrate manufacturing method, mask blank manufacturing method, mask manufacturing method, mask blank glass substrate, mask blank, and mask Download PDFInfo
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- CN1841189A CN1841189A CN 200610071565 CN200610071565A CN1841189A CN 1841189 A CN1841189 A CN 1841189A CN 200610071565 CN200610071565 CN 200610071565 CN 200610071565 A CN200610071565 A CN 200610071565A CN 1841189 A CN1841189 A CN 1841189A
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Abstract
A method of manufacturing a mask blank glass substrate includes a marking step of irradiating laser light onto a mirror-like surface in an area, having no influence on transfer, on a surface of the mask blank glass substrate to thereby form a pit that is used as a marker for identifying or managing the mask blank glass substrate.
Description
Technical field
The present invention relates to mask blank glass substrate manufacturing method, mask plate manufacture method, mask manufacture method, mask plate glass substrate, mask plate and mask.
Background technology
Traditionally, a kind of like this mask plate is known: in this mask plate, provide the optical readable area code with the end face that is formed on glass substrate or the form of the metal film on the back side.(for example referring to the uncensored public announcement of a patent application of Japan (JP-A) No.2002-116533).In addition, a kind of like this mask plate also is known: wherein (for example referring to the uncensored public announcement of a patent application of Japan (JP-A) No.S59-15938) partly located in the frosted that is marked on the side (end face) of glass substrate of Yu Ding symbol.
In recent years, the wavelength of exposure light source has been reduced to 200nm or littler.Therefore, the desired quality of mask plate glass substrate or mask plate (for example the defective number of the flaw size of Yun Xuing, permission or influence thickness evenness in the plane of etchant resist of pattern properties of device) becomes more and more higher.Mode according to forming area code etc. may generate dust in process thereafter.Thereby, may be difficult to satisfy desired quality.In addition, according to the mode that forms area code etc. with form the position of area code etc., thickness evenness may worsen in the plane of the etchant resist that is formed by spin coating method.Thereby may be difficult to satisfy desired quality.Especially be under the situation of 300nm or littler thin etchant resist at the thickness that is used for pattern miniaturization in recent years, because the variation of thickness and formation is applied to pattern influence are than bigger in the past in the plane, therefore, it is more remarkable that problem becomes.In addition, in recent years, in the mask plate glass substrate, end face also usually is carried out mirror polish.Therefore, usually be difficult to read precision fully from acquisitions such as glossiness symbols.
Summary of the invention
Therefore, an object of the present invention is to provide mask blank glass substrate manufacturing method, mask plate manufacture method, mask manufacture method, mask plate glass substrate, mask plate and the mask that can address the above problem.
In order to achieve the above object, the present invention has following structure.
(structure 1)
A kind of method of making the mask plate glass substrate comprises:
Mark forms step, and this step uses the pit of marking, this mark to be used for sign or management mask plate glass substrate with on the mirrored surface of laser radiation in the lip-deep zone that transfer printing is not had influence of mask plate glass substrate thereby form.
Mark forms step and for example on the first type surface that does not form the mask pattern film of glass substrate transfer printing not have in the outer peripheral areas of influence, on the side that transfer printing not have influence of glass substrate, be formed between first type surface and the side on the inclined-plane, formation indicates at the otch sign place of glass substrate or the like.Mark forms step for example by being melted by laser radiation or the part of the mirrored surface of the glass substrate that distils, thereby forms pit.The mark of Xing Chenging has guaranteed to read fully precision like this, and can not generate dust in subsequent step.
Mark for example can be used as identification information/identifier (authentication code) or the management symbol (management code) unique to the mask plate glass substrate that produces.This makes it possible to manage one by one the mask plate glass substrate, and this can't realize traditionally.
In addition, this identification information for example can be relevant with the information (substrate information: defect information, the format surface information such as surfaceness or flatness, the shape such as thickness or size or the like) or the unique substrate information (material, component, composition, purity, birefringence, transmissivity or the like) that glass substrate had that obtain in the manufacturing step.This makes it possible to realize reliably interrelated between information that institute obtains or prepares and the mask plate glass substrate.
The mark that replaces sign information/identifier or management symbol, or except the mark of sign information/identifier or management symbol, markers step can form the mark of unique substrate information that substrate information, glass substrate had of obtaining in the direct representative manufacturing step etc.In the case, can suitably carry out the management one by one of mask plate glass substrate equally.
For the material of glass substrate, for example can use the synthetic quartz environment or based on SiO
2-TiO
2Multicomponent glass.According to the material of glass substrate, thereby selection is used for forming by the part of laser radiation fusing or distillation glass substrate the optical maser wavelength of pit.Under the situation of aforementioned glass substrate material, mark forms step for example can be by using carbon dioxide (CO
2) laser labelling that forms of gas laser forms mark.Can suitably melt or the surface of the glass substrate that distils that part of by suitable adjustment laser energy, and can read the pit that forms by fusing or distillation with high precision.In addition, can also suppress owing to the aging crack of causing of worsening generates.Mark forms step can also be by repeatedly forming a plurality of pits with laser radiation on each will be the position of pit.This can reduce the change of shape of a plurality of pits.Thereby, can improve the precision that reads of mark.A plurality of pits for example can form each point such as the such 2 d code of data matrix or QR code, perhaps can be to be used to prevent that the third party from understanding the covered code or the random number code of label information.
Unless selected suitable optical maser wavelength according to glass substrate material, otherwise the part of laser radiation for example forms in the mode of slit-like mark.In this case, the slit-like mark undesirably causes the generation of dust.
In addition, by on the side of glass substrate, forming mark on the glass substrate end face such as the inclined-plane or on the otch sign in glass substrate, can prevent because the generation of mark and on the first type surface of glass substrate or be formed on and generate new defective and so on the mask pattern film on the first type surface.In addition, owing to can remove mark by end face polishing etc., therefore, and for example, even when changing mark, also can under the situation of the thickness that does not reduce glass substrate, form new mark essential.
Mark forms step and for example carried out before grinding/polished glass substrate, for example in the reception glass substrate, carries out, or after carrying out the check of research/polishing and substrate, carry out.Mark forms step and can carry out during each step of grinding/polishing, for example, after the abrading glass substrate, after the end face of polished glass substrate, perhaps carries out after the first type surface to glass substrate carries out mirror polish.When mark forms step for example is when carrying out before the substrate checking procedure, and the mark of the identification information/identifier of indication glass substrate or management symbol is formed.
In addition, for example, when in the polishing of the end face of glass substrate, carrying out finishing polish and super finishing polish, can carry out mark between to the finishing polish of end face and super finishing polish and form step.This can reduce in the mark and end face on surfaceness except that mark, thereby for preventing that the dust generation is more effective.Finishing polish for example is by with comprising the polishing that the polishing solution of cerium oxide and the solvent such as water and polish brush or polishing pad are carried out.Super finishing polish for example is by with comprising the polishing that the polishing solution of silica gel and the solvent such as water and polish brush or polishing pad are carried out.Mark forms step and for example can carry out on the first type surface in glass substrate between finishing polish and the super finishing polish.In this case, because the super finishing polish of first type surface is carried out, therefore can further reduce the possibility that mark causes dust to generate after mark forms.
(structure 2)
Method according to structure 1 also comprises:
Preparation is about the step of the substrate information of mask plate glass substrate,
Wherein substrate information is relevant with mark.
This makes it possible to such as the substrate information about the information of surface configuration, flatness and the defective of glass substrate directly related with glass substrate.
Unique substrate information that substrate information or each glass substrate that preparation prepares to obtain in the manufacturing step about the substrate information representative of glass substrate had.For example, the substrate information that obtains in the manufacturing step comprises the substrate information that obtains in the substrate checking procedure.
The substrate checking procedure is for example checked about the thickness of the shape of the first type surface of glass substrate, surface configuration (the concavo-convex state of the warped shapes of first type surface or entire main surface), flatness, parallelization degree or the like.This makes it possible to carry out effectively the film that for example forms mask pattern film (for example phase shift film, photomask etc.) and forms step when making mask plate.
In addition, the substrate checking procedure is for example checked position, kind (protruding defective (particulate etc.), depression defect (aperture, crack etc.) etc.) and the size about the defective of the first type surface of glass substrate.If for example, this defective data is known, then mask pattern can be designed to avoid defective when making mask.
(structure 3)
According to the method for structure 2, wherein:
Substrate information is at least one the information in physical attribute, chemical attribute, optical properties, format surface, surface configuration, material and the defective that comprises the mask plate glass substrate.
As the physical attribute of glass substrate, for example birefringence, refractive index, absorption coefficient etc. have been enumerated.As the chemical attribute of glass substrate, for example acid resistance, fastness to alkali etc. have been enumerated.As the optical properties of glass substrate, for example absorptivity, transmissivity etc. have been enumerated.As the surface configuration of glass substrate, for example surfaceness, wavy degree, flatness, parallelization degree, convex shape, concave shape etc. have been enumerated.As the shape of glass substrate, for example thickness, size etc. have been enumerated.As the material of glass substrate, for example having enumerated, type of glass, one-tenth grade.As the defective of glass substrate, enumerated the defective in the substrate for example, for example rill, bubble or since impurity to mix the transmissivity that causes unusual, the defective on the substrate surface, for example particulate, crack or aperture etc., or the like.As mentioned above, defective for glass substrate, by except the aforementioned disadvantages kind, adding defective locations in glass substrate or the information the size again, for example the designing mask pattern is so that the defective when avoiding making mask, or, handle this defective by glass substrate being applied to mask plate or being suitable for being used for the relatively mask plate of the wavelength region may of length with grade of wherein not considering defective.
(structure 4)
A kind of method of making mask plate comprises:
Film forms step, and this step forms the mask pattern film on the first type surface of the mask plate glass substrate that obtains by the method according to structure 1.
For mask plate, there are a plurality of grades, these grades have the quality that depends on exposure wavelength or purposes (formation pattern).The flaw size that allows, the defective number of permission etc. are according to grade and difference.In addition, in mask plate is made, multiple mask pattern film (phase shift film, photomask (opaque coating) etc.) and etchant resist have been formed.Therefore, the film that will not form in the manufacturing of manageability mask plate and the grade and the kind of etchant resist.
But, can carry out the management one by one of mask plate according to structure 4.Therefore, in the mask plate manufacturing, can suitably manage the film that will form and the grade and the kind of etchant resist.Described mark is for example represented the identification information/identifier or the management symbol of mask plate glass substrate.Identification information/identifier or management the symbol for example kind with the mask plate that will be formed by the mask plate glass substrate are relevant.In addition, owing to, can manage mask plate reliably one by one, therefore can carry out relevant between information and the mask plate reliably for example when the mask mark of mask plate etc. provides information about mask plate.
(structure 5)
A kind of method of making mask plate comprises:
Film forms step, and this step forms the mask pattern film on the first type surface of glass substrate;
Mark forms step, this step is with on the mirrored surface of laser radiation in the lip-deep zone that transfer printing is not had influence of glass substrate, thereby form with the pit of marking the mask plate that this mark is used to identify or manage glass substrate and/or utilizes the mask pattern film on the glass substrate to form.
According to structure 5, can obtain the effect identical with structure 4.Mark in the structure 5 forms step and can carry out in structure 1 described glass substrate manufacture process, but also can be after the glass substrate manufacture process, carry out before or after forming the mask pattern film.
(structure 6)
Method according to structure 5 also comprises:
Prepared the step about the substrate information of glass substrate before film forms step, described mark is relevant with substrate substrate information, and
The film determining step, this step is determined the mask pattern film that will form based on the substrate information that reads from mark,
Wherein film forms step and forms determined mask pattern film in the film determining step.
This makes and can determine that film forms the kind of the mask pattern film that will form in the step according to the substrate information in the step of preparing substrate information (particularly being the assay of substrate checking procedure (the substrate checking procedure of at least one in surface configuration, flatness and the defective of the first type surface of check glass substrate)).Therefore can effectively not use the mask plate glass substrate lavishly.
The film determining step for example is identified as the surface configuration of first type surface the shape of one of the substrate information that is the mask plate glass substrate.When in the mask pattern film, having membrane stress, when forming mask plate, the surface configuration of first type surface be the situation of projection and its for situation about caving between, surface configuration is different.Thereby the film determining step is determined the kind and the thickness of the mask pattern film that will form under the situation of the assay of considering the substrate checking procedure.Form situation that the kind of the mask pattern film that will form in the step has been determined in advance etc. with film and compare, this makes it possible to improve output.
(structure 7)
Method according to structure 5 also comprises:
Film forms the thin-film information preparation process after the step, and this step is prepared the thin-film information about the mask pattern film,
Wherein said mark is relevant with the thin-film information that obtains in the thin-film information preparation process.
Particularly, the thin-film information preparation process is for example represented the film checking procedure, this check of film checking procedure thin-film information, for example at least one in the optical properties of mask pattern film, surface configuration and the defective.This make it possible to the mask pattern film such as directly related with mask plate about the thin-film information of optical properties, surface configuration, defective etc.
(structure 8)
According to the method for structure 7, wherein:
Thin-film information is at least one the information in physical attribute, chemical attribute, electrical properties, optical properties, format surface, material, defective and the film formation condition that comprises the mask pattern film.
As the physical attribute of film, enumerated for example thermal expansivity etc.As the chemical attribute of film, for example acid resistance, fastness to alkali, water resistance etc. have been enumerated.As the electrical properties of film, enumerated for example resistance coefficient etc.As the surface configuration of film, for example surfaceness, wavy degree, flatness, parallelization degree, convex shape, concave shape etc. have been enumerated.As the material of film, enumerated component distributing on the direction etc. in for example component, composition, thickness direction or the plane.As the defective of film, enumerated for example following defective: by impurity mix that the transmissivity that causes is unusual, particulate or aperture.As the film formation condition of film, for example having enumerated, membrane formation device, gaseous species, gaseous tension, sputtering target information, gas flow rate, heating condition, film form the date etc.Similar with above-mentioned glass substrate defective, by except the aforementioned disadvantages kind, adding defective locations in film or the information the size again, for example the designing mask pattern is so that the defective when avoiding making mask, or have the mask plate of wherein not considering the grade of defective by film is applied to, handle this defective.
As the method for using thin-film information, following use-pattern is considered especially.Mark forms the mark that step is formed for identifying the thickness of mask plate glass substrate, the mask plate manufacture method comprises the film checking procedure, this step is for example checked as in the optical properties of the thin-film information of mask pattern film, surface configuration and the defective at least one, this film checking procedure comprise one by/do not pass through determining step, this step judges whether to satisfy the mask plate specification, this mask plate manufacture method also comprises: the film strip step, and this step divests the mask pattern film from being judged as the mask plate that does not satisfy the mask plate specification; The thickness identification step, this step is discerned the thickness that is divested the mask plate glass substrate of mask pattern film in the film strip step by using the information that reads from mark; And polishing step again, this step is according to polishing the first type surface of mask plate glass substrate according to the determined polished amount of the thickness of discerning in the thickness identification step, and film forms on the first type surface of step polished mask plate glass substrate in polishing step again and forms new mask pattern film.
As the material of mask plate glass substrate, for example use synthetic quartz glass or based on SiO
2-TiO
2Multicomponent glass.Because this glass is expensive, therefore wish effectively not use lavishly glass substrate.According to aforesaid way, even to such an extent as to the mask plate specification is not satisfied in the formation failure of generation mask pattern film etc., also can recycling effectively mask plate glass substrate.By using recycling mask plate glass substrate, can suitably make new mask plate.The mask plate glass substrate can be recycling as with recycling before the mask plate glass substrate of different grade (for example lower grade).
In addition, according to aforesaid way,, therefore can simplify the preceding thickness classification step of polishing again owing to can in the thickness identification step, discern the thickness of glass substrate.In addition, according to the thickness that identifies, can be easily and polishing condition such as polished amount suitably is set.Polishing step for example is provided with processing capacity according to thickness, and by carrying out polishing with the corresponding polished amount of thickness.After polishing step again, for example, form the mark of sign mask plate glass substrate after recycling.The mark that is noted that the mask plate glass substrate before recycling here for example can be removed by the polishing in the polishing step again.
(structure 9)
Mask plate manufacture method according to structure 5 also comprises:
The etchant resist that film forms after the step forms step, and this step forms etchant resist on the mask pattern film, and
Etchant resist information preparation process, this step is prepared the etchant resist information about etchant resist,
Wherein said mark is relevant with the etchant resist information that obtains in etchant resist information preparation process.
According to structure 9, can obtain the effect identical with structure 4.Etchant resist information preparation process is for example represented the etchant resist checking procedure of check etchant resist particularly.
(structure 10)
According to the method for structure 9, wherein:
Etchant resist information is at least one the information in physical attribute, chemical attribute, format surface, material, defective and the film formation condition that comprises etchant resist.
As the physical attribute of etchant resist, enumerated for example hardness etc.As the chemical attribute of etchant resist, for example acid resistance, base resistance etc. have been enumerated.As the surface configuration of etchant resist, enumerated bird's eye view of thickness uniformity coefficient, average thickness, etchant resist thickness in for example surfaceness, wavy degree, flatness, the plane etc.As the material of etchant resist, for example resin material, molecular wt, etchant resist kind etc. have been enumerated.As the defective of etchant resist, enumerated for example protruding defective such as particulate, the depression defect such as aperture etc.Defective for etchant resist, by except the aforementioned disadvantages kind, adding defective locations in etchant resist or the information the size again, for example the designing mask pattern is so that the defective when avoiding making mask, or have the mask plate of wherein not considering the grade of defective by etchant resist is applied to, handle this defective.As the formation condition of etchant resist, for example having enumerated, coating unit, spin coating condition, heating condition, well heater, cooling condition, refrigeratory, etchant resist form date, etchant resist formation environment etc.
As the method for using etchant resist information, following use-pattern is considered especially.Mark forms step and is formed for identifying the mark that will be formed on the etchant resist on the mask pattern film, and the mask plate manufacture method comprises that etchant resist forms step, and this step forms etchant resist on the mask pattern film; And etchant resist checking procedure, this step is for example checked as in thickness uniformity coefficient and the defective in the plane of the etchant resist information of formed etchant resist at least one, this etchant resist checking procedure comprise one by/do not pass through determining step, this step judges whether to satisfy the mask plate specification, and the mask plate manufacture method also comprises: the etchant resist strip step, and this step divests etchant resist from being judged as the mask plate that does not satisfy the mask plate specification; Etchant resist identification step, this step be by using the information that reads from mark, is identified in the etchant resist that will form on the mask pattern film on the glass substrate that the etchant resist strip step divested etchant resist; And etchant resist forms step again, and this step forms the etchant resist of discerning in the etchant resist identification step on the mask pattern film.
According to aforesaid way, even under the situation about when for example being coated with the covering etchant resist, breaking down, also can suitably apply/form again etchant resist again.In addition, owing to the etchant resist that can select reliably to form again, therefore can simplify the step management.
(structure 11)
A kind of being used for by using the mask plate made to obtain the mask plate manufacture method of new mask plate, the mask plate of wherein having made has mask pattern film on the mask plate glass substrate and the etchant resist on the mask pattern film,
Wherein the mask plate glass substrate is not form mask plate glass substrate lip-deep has mirrored surface in the zone of influence to transfer printing on, wherein has the mark that is used to identify or manage mask plate glass substrate and/or mask plate, described mark is formed by laser radiation, and
Mark is relevant with at least one information in comprising following information: about the substrate information of mask plate glass substrate, and about the thin-film information of mask pattern film and about the etchant resist information of etchant resist,
This method comprises:
Film strip step, this step divest the etchant resist of the mask plate of having made or the etchant resist and the mask pattern film of the mask plate made;
Film forms step again, and this step forms mask pattern film and the etchant resist that is different from the etchant resist of the film that divests or is different from the film that divests; And
Acquisition is about at least one the step in the thin-film information of the etchant resist information that forms the etchant resist that forms in the step at film again and mask pattern film,
Wherein at least one in etchant resist information and the thin-film information is relevant with mark.
The film strip step is for example represented etchant resist strip step or film strip step particularly.
In addition, a kind of being used for by using the mask plate of having made to make the mask plate manufacture method of new mask plate, the mask plate of wherein having made has the mask pattern film that will be formed mask pattern on the mask plate glass substrate, is formed on the etchant resist on the mask pattern film and is used to identify the mark of etchant resist, the mark that is used to identify the mark of mask pattern film or is used to identify glass substrate, this method comprises: preparation process, the mask plate that this step preparation has been made; The etchant resist strip step, this step divests etchant resist from the mask plate of having made; Etchant resist is selected step, and this step is selected to be formed on the etchant resist of having made on the mask plate from the information that mark reads by use; And etchant resist forms step again, and this step is formed on etchant resist and selects the etchant resist selected in the step on the mask pattern film.
According to aforesaid way, even change of sensitivity (deterioration and so on) takes place in the etchant resist of the mask plate of having made, also can recycling effectively mask plate.In addition, because mark is formed on the mask plate itself, therefore can make interrelated about the information and the mask plate of mask plate.Can simplify the step management like this.
(structure 12)
According to the mask plate manufacture method of structure 11, wherein:
Mark has pit shape, this pit shape be by with laser radiation to the mask plate glass substrate lip-deep to transfer printing do not have the influence the zone in mirrored surface on form.
This makes it possible to form the mark of the possibility with very little generation dust.
(structure 13)
According to the method for structure 11, wherein:
Etchant resist is the chemical reinforcing type etchant resist, and
Beginning to prepare mask plate as the described mask plate of having made from applying etchant resist through after the schedule time.
Use under the situation of the vertiginous chemical reinforcing type etchant resist of sensitivity at mask plate even this makes, also can be suitable recycling.Very big change of sensitivity takes place in chemical reinforcing type etchant resist usually in the short time (for example about two weeks).If mask is by making in order to the big against corrosion film formed mask plate of change of sensitivity, then the CD of the mask pattern of Xing Chenging changes and may undesirably become greatly.Under the situation of normal etchant resist, the time period that change of sensitivity becomes bigger for example is about one month or three months.
(structure 14)
A kind of method of production mask comprises:
Printing is by the step of the mask pattern film of the mask plate that method obtained of structure 5, thereby forms mask pattern on described mask plate glass substrate.
According to the method for structure 14, described mask plate information obtains by described mark, thereby can obtain management one by one reliably in the manufacturing from the mask plate to the mask.
(structure 15)
A kind of mask plate glass substrate comprises:
Pit on the mirrored surface in the lip-deep zone that transfer printing is not had to influence of mask plate glass substrate,
Pit forms by laser radiation, and is used as mark, and this mark is used to identify or manage the mask plate glass substrate and/or with the mask plate of the formation of the mask pattern film on the mask plate glass substrate.
(structure 16)
According to the mask plate glass substrate of structure 15, wherein:
Pit be the mask plate glass substrate with the perpendicular end face of first type surface on, form in the zone outside the check light light path, wherein the mask pattern film forms at the first type surface place, check light checks that at least being present in pattern forms defective in the zone.
Since pit be on the end face of mask plate glass substrate, check in the zone be present in outside the check light light path that pattern forms the defective in the zone and form that so pit can not hinder check light at least.Therefore, can obtain to guarantee the mask plate glass substrate or the mask plate of defective quality.
(structure 17)
A kind of mask plate glass substrate comprises:
The mask plate glass substrate with the perpendicular end face of first type surface on, with four angles of mask plate glass substrate in a corresponding pit in 10mm or shorter zone, the both sides of eliminating and first type surface are at a distance of the zone of 1.2mm simultaneously, the mask pattern film that wherein is used to form pattern transferring will be formed on the first type surface place
Pit forms by laser radiation, and is used as mark, and this mark is used to identify or manage the mask plate glass substrate and/or with the mask plate of the formation of the mask pattern film on the mask plate glass substrate.
This makes it possible to obtain and structure 1 or 15 identical effects.In addition, be under the situation about being formed on by spin coating method on the mask pattern film at etchant resist, can prevent deterioration by thickness evenness in the plane of the etchant resist that pit caused on the end face that is formed on glass substrate.
(structure 18)
According to the mask plate glass substrate of structure 15 or 17, wherein:
The A/F of pit (L1) is 150 μ m or bigger, and the degree of depth of pit (D) is 10 μ m or bigger, and the ratio between the A/F and the degree of depth (L1/D) is 10 or bigger.
This makes it possible to guarantee read fully precision, and can suppress the generation of dust, and this is to clean pit inside because can be at an easy rate by what use side brush and so on.
The surfaceness of pit is different with the mirrored surface of glass substrate preferably, and, for example, with regard to Ra (arithmetic mean surface roughness), preferably be set in 0.1 to 5nm the scope, more preferably 0.1 to 2nm..Algorithm average surface roughness Ra follows Japanese Industrial Standards (JIS) B0601.The surfaceness of pit particularly is the surfaceness of the bottom of pit.
Place, periphery at the opening portion of pit can form the annular projection part, with the opening portion around pit.Utilize this structure, can strengthen the precision that reads of mark.Therefore, for example,, also can read mark with abundant high precision even when the degree of depth of pit is more shallow.When the degree of depth of pit is more shallow, removes the required polished amount of mark and reduce.Therefore, utilize this structure, for example when the mask plate glass substrate was recycled, mark can be easy to be changed.The annular projection part preferably is formed protuberance smoothly.The height of bossing preferably is set to 0.05 to 5 μ m, more preferably 0.05 to 1 μ m.
(structure 19)
According to the mask plate glass substrate of structure 15 or 17, wherein:
Described mark is relevant with substrate information about the mask plate glass substrate.
(structure 20)
A kind of mask plate comprises:
According to the mask plate glass substrate of structure 15 or 17, and
To be formed the mask pattern film of mask pattern, the mask pattern film forms on the mask plate glass substrate.
(structure 21)
According to the mask plate of structure 20, wherein:
Described mark is relevant with at least one information in comprising following information: about the substrate information of mask plate glass substrate, about the thin-film information of mask pattern film and about the etchant resist information of etchant resist.
(structure 22)
A kind of mask comprises:
Described mask plate glass substrate according to structure 15; And
Be formed on the mask pattern on the described mask plate glass substrate.
According to the present invention, can on the mask plate glass substrate, form the mark of possibility with very little generation dust.In addition, can also recycling effectively mask plate glass substrate or mask plate.In addition, can obtain to keep the mask plate glass substrate or the mask plate of defective quality.In addition, forming under the situation of etchant resist thickness evenness worsens in the etchant resist plane that can obtain can prevent to be caused by the mark that is formed on the end face mask plate glass substrate or mask plate on the film that is being used for mask pattern by spin coating method.
Description of drawings
Figure 1A and 1B illustrate an example of the structure of mask plate according to a preferred embodiment of the invention, and wherein Figure 1A is the side view of mask plate, and Figure 1B is the figure of an example of the structure of flag activation;
Fig. 2 is the figure of an example of detail shape of the pit of flag activation;
Fig. 3 is the process flow diagram of an example that the manufacture method of mask plate is shown; And
Fig. 4 is the process flow diagram that an example that is used for the manufacture method by making new mask plate with the mask plate made is shown.
Embodiment
Describe according to a preferred embodiment of the invention referring now to accompanying drawing.
Figure 1A and 1B illustrate an example of the structure of mask plate 10 according to an embodiment of the invention.Figure 1A is the side view of mask plate 10.In this example, mask plate 10 is to be used for such as ArF excimer laser (wavelength: 193nm) or F
2(wavelength: 157nm) and so on wavelength is the mask plate of 200nm or littler exposure light source to excimer laser, and comprises glass substrate 12, is used for the film 14 and the etchant resist 16 of mask pattern.
Glass substrate 12 is glass substrate of mask plate, and is to be made by the backing material such as synthetic quartz glass.Glass substrate 12 has first type surface and end face (side and inclined-plane), and these surfaces are polished to predetermined surfaceness separately, so that become minute surface (for example arithmetic mean surface roughness Ra is 1nm or littler).In addition, in this example, glass substrate 12 has mark 18 at the part place of end face, and this mark 18 is used to the identification or the management of glass substrate 12.By usage flag 18, glass substrate 12 or mask plate 10 are managed one by one.
Mask pattern film 14 is the films such as photomask or phase shift film.Mask pattern film 14 forms mask pattern in mask fabrication process.Etchant resist 16 is formed on the mask pattern film 14.
An example of the structure of Figure 1B flag activation 18.In this example, mark 18 is 2 d codes, and has a plurality of holes or the pit 20 of the each point that forms 2 d code.Each pit 20 is by melting with laser radiation or the part of the end face of the glass substrate 12 that distils forms.
In this example, the mark 18 representative identification information unique to glass substrate 12.In addition, identification information is relevant with for example information about surface configuration, flatness, defective etc. that obtains in the manufacture process of mask plate 10.
Fig. 2 illustrates an example of the detail shape of pit 20.In this example, each pit 20 is by using carbon dioxide (CO
2) laser labelling that forms of gas laser and the hole that forms.The opening portion of pit 20 generally is circular.In addition, formed the annular projection part, smoothly swelled with end face from glass substrate 12 in the periphery of the opening portion of pit 20, thereby around the opening portion of pit 20.By forming opening portion by this way, that can improve mark 18 reads precision (seeing Figure 1A and 1B).The opening portion of pit 20 can be such as such polygonal of square, or has the polygonal of fillet.
Here, the A/F L1 of pit 20 for example is 100 to 500 μ m, more preferably about 150 to 300 μ m.The bottom width L2 of pit 20 for example is 10 to 450 μ m, more preferably about 30 to 250 μ m.The width L3 of the sloping portion of pit 20 for example is 5 to 75 μ m, more preferably about 15 to 60 μ m.The depth D of pit 20 for example is 3 to 20 μ m, more preferably about 5 to 15 μ m.The bump height of the opening portion of pit 20 for example is 0.05 to 5 μ m, more preferably about 0.05 to 1 μ m.In addition, the surfaceness of pit 20 for example is 0.1 to 5nm with regard to Ra (arithmetic mean surface roughness), and more preferably 0.1 to 2nm.
In order to ensure reading precision fully, and be easy to generate to suppress dust by inside with the cleaning pit 20 of side brush and so on, the A/F L1 of pit 20 is 150 μ m or bigger preferably, the depth D of pit 20 is 10 μ m or bigger preferably, the A/F of pit 20 and the ratio between the degree of depth (L1/D) preferably 10 or bigger.
Glass substrate 12 is subjected to fault detection, with unusual or the like the existence of the protruding defective (particulate etc.) in the zone that check to form mask pattern at least, depression defect (aperture, crack etc.), rill, bubble, the transmissivity that causes owing to mixing of impurity.For example, the method for inspection of describing among the execution day this patent No.3422935 is with existence or the rill in the glass substrate 12 or the existence of bubble of the lip-deep raised or sunken defective of checking glass substrate 12.In this method of inspection, for two first type surfaces of glass substrate 12 and at least with perpendicular that of first type surface to the side, in glass substrate 12, propagate and satisfy simultaneously under the condition of total conditioned reflex at check light (laser), introduce check light from the inclined-plane between first type surface and side, thereby check the existence of aforementioned disadvantages by detecting the leak light that causes by the leakage of checking light, wherein check the leakage of light to cause owing to departing from total conditioned reflex, should be and depart from total conditioned reflex owing to raised or sunken defective.On the other hand, in order to check owing to the impurity in the glass substrate 12 mixes the unusual existence of transmissivity that causes, introduce light from the side of glass substrate 12 with exposure wavelength, and by receiving because the light of introducing and the light launched from the inherent vice of glass substrate 12 with wavelength of being longer than exposure wavelength with exposure wavelength, thereby check inherent vice based on the light quantity that receives.In above-mentioned any method of inspection, the side that check light all hits glass substrate 12.Therefore,, then fault detection can't be carried out,, also sufficient testing accuracy can't be obtained even perhaps carried out fault detection if the pit that serves as a mark is formed on the side (check light will hit herein) of glass substrate 12.Therefore, the pit that serves as a mark be preferably formed in as with the side of the perpendicular end face of the first type surface that forms the mask pattern film on check light light path outside the zone in certain position, wherein this check light checks that at least being present in pattern forms defective in the zone.Particularly, in the glass substrate 12 that is of a size of 152.4mm * 152.4mm * 6.35mm, certain position that is preferably in outside the core of the 132mm on the side of glass substrate 12 forms the pit that serves as a mark, that is, with four angles of glass substrate 12 in corresponding that in 10mm or shorter zone, form the pit that serves as a mark.
More preferably, with four angles of glass substrate 12 in corresponding that in 10mm or shorter zone, form the pit that serves as a mark, get rid of simultaneously and zone, the both sides of the first type surface of glass substrate 12 at a distance of 1.2mm.By form the pit that serves as a mark in the position of aforementioned indication, forming under the situation of etchant resist on the mask pattern film by spin coating method, can prevent the deterioration of thickness evenness in the plane of the etchant resist on the mask pattern film.
Fig. 3 is the process flow diagram of an example that the manufacture method of mask plate 10 is shown.Except hereinafter will describing, those steps in each step of manufacture method and the known mask plate manufacture method are same or similar.In this example, at first, by using muller to grind to have angled end-face the glass substrate 12 (grinding steps S102) of (chamfered end surface).
Then, come the end face and the first type surface (polishing step S104) of polished glass substrate 12 by using the bilateral buffing machine, and after polishing, carry out cleaning (cleaning S106).In polishing step S104, the end face of glass substrate 12 and first type surface for example experience rough polishing, finishing polish and super finishing polish, so that be polished the minute surface that for example has separately with regard to RMS (r.m.s. roughness) for 0.2nm or littler surfaceness.
Then, carry out the substrate check to obtain information (substrate checking procedure S108) about surface configuration, flatness and the defective of glass substrate 12.Substrate checking procedure S108 for example checks thickness, flatness and first type surface warped shapes (the concavo-convex state of entire main surface) about the surface configuration of glass substrate 12 or the like.In addition, for the defective of glass substrate 12, substrate checking procedure S108 for example checks position, kind, size of defective or the like.In this case, the size of defective for example is divided into 0.2 μ m or littler, 0.2 to 0.5 μ m, 0.5 to 1 μ m and 1 μ m or bigger.By distinguishing flaw size by this way, can suitably divide the grade of glass substrate 12.
Then, for example by using the laser labelling of carbon dioxide gas laser, the part of the end face of glass substrate 12 is melted by laser radiation or distils, thereby each (mark forms step S110) in the pit 20 of formation mark 18.The identification information that mark 18 representative is unique to glass substrate 12.In addition, this identification information is relevant with the assay of substrate checking procedure S108.Thereby, by usage flag 18, can discern the shape of glass substrate 12, for example thickness, flatness, warped shapes or the like, and position of defective, kind, size or the like.Therefore, according to this example, can carry out the formation of mask pattern film 14 grades effectively.In addition, for example, in mask was made, mask pattern can be designed to avoid described defective.
Form among the step S110 at mark, in the pit in the mark 18 20 each, irradiating laser repeatedly.This can reduce the change of shape of pit 20, thereby improves the precision that reads of mark 18.
Then, mark 18 is read, and based on the mark 18 that reads, determines to form mask pattern film 14 (film determining step S112) on glass substrate 12.In this example, film determining step S112 discerns the surface configuration of glass substrate 12 according to the assay of the substrate checking procedure S108 relevant with mark 18.Then, according to the shape that identifies, the warped shapes of first type surface is for example selected the type of the mask plate that is applicable to glass substrate 12.Based on this selection, film determining step S112 determines the necessary photomask of this mask plate, photomask and phase shift film, or the like, with as the mask pattern film 14 that will form.
According to this example, can determine the type of mask pattern film 14 based on the assay of substrate checking procedure S108.Therefore, can effectively not use glass substrate 12 lavishly.
In this example, it is interrelated that film determining step S112 also makes the identification information of the information of the etchant resist 16 that indication will use in the selected mask plate 10 and mark 18.Thereby,, can further discern the etchant resist 16 that will be coated on the mask pattern film 14 by usage flag 18.
After film determining step S112, on the first type surface of glass substrate 12, form determined mask pattern film 14, the thickness (film form step S114) of its thickness for realizing needed optical properties, then, the mask pattern film 14 (film checking procedure S116) that check forms.In this example, film checking procedure S116 comprises one to be passed through/by determining step, and judge whether the mask pattern film 14 that forms satisfies the mask plate specification.When it passes through the check of film checking procedure S116 (S116: by), etchant resist 16 coated (formation) is (etchant resist forms step S118) on mask pattern film 14, and the etchant resist 16 of Tu Fuing is verified (etchant resist checking procedure S120) then.Etchant resist checking procedure S120 comprises one to be passed through/by determining step, and judge whether the etchant resist 16 that applies satisfies the mask plate specification.If its check by etchant resist checking procedure S120 (S120: by), then mask plate 10 is finished.
Film checking procedure S116 and etchant resist checking procedure S120 carry out the check to the specification that influences pattern transfer separately, and it is several or still less that described specification for example is that the number of 0.2 μ m or bigger defective (aperture or particulate) is.Film checking procedure S116 for example also checks predetermined optical properties (transmissivity or the like).
When film checking procedure S116 does not pass through (S116: pass through), divest mask pattern film 14 (film strip step S206) from glass substrate 12.Then, read the mark 18 of glass substrate 12, and discern the thickness (thickness identification step S208) of glass substrate 12 according to the assay of the substrate checking procedure S108 relevant with the mark that reads 18.If glass substrate 12 has permission by polishing recycling thickness (S210: be) again, then come again polished glass substrate 12 (polishing step S212 again) according to the polished amount of determining according to the thickness that identifies among the thickness identification step S208.For example, based on the thickness that identifies, polishing step S212 is divided into glass substrate 12 by in the group in the group of thickness classification again, and according to coming polished glass substrate 12 for the default polished amount of this group.
Then, after polishing again, method is returned cleaning S106 and is repeated subsequently step.In this case, mark forms step S110 and forms mark 18, is used to identify by polishing and recycling glass substrate 12 again.In addition, film forms on the first type surface of the glass substrate 12 that step S114 polishes in polishing step S212 again and forms new mask pattern film 14.According to this example, can effectively not use expensive glass substrate 12 lavishly.
Step S210 judges based on according to for whether the processing capacity that satisfies the minimum requirements of quality institute remains the minimum thickness that the mask plate glass substrate is determined after the polished glass substrate 12 again whether glass substrate 12 can be recycled.(S210: not), glass substrate 12 is dropped in the time of can not be recycling because thickness is not enough when judging.
On the other hand, when in etchant resist checking procedure S120, passing through (S120: pass through), divest etchant resist 16 (etchant resist strip step S202) from glass substrate 12, then, judge whether to be necessary to polish again (S204) for recycling glass substrate 12.Even for example when by applying etchant resist 16 again with pre-determined number also can't check by etchant resist the time, step S204 judges and is necessary to polish again.Step S204 can judge whether based on the assay of substrate checking procedure S108 to be necessary to polish again.
(S204: not), read mark 18, and, the etchant resist 16 that be coated on the mask pattern film 14 is selected (etchant resist is selected step S214) when judgement there is no need to polish again based on mark 18.Then, selected etchant resist 16 is applied to (etchant resist forms step S216 again) on the mask pattern film 14, and method advances to etchant resist checking procedure S120 once more.According to this example,, also can suitably carry out the coating again/formation again of etchant resist 16 even when the coating/formation of etchant resist 16 is unsuccessful.In addition, owing to the etchant resist 16 that can select reliably will apply again/form again, therefore can simplify the step management.
On the other hand, when judgement is necessary to polish again (S204: be), film strip step S206 and step subsequently are repeated.This make it possible to recycling those only by apply/forming 16 glass substrate that can't be recycled 12 of etchant resist again again.
Though omit to some extent in aforementioned description, substrate checking procedure S108 judges also preferably for example whether glass substrate 12 satisfies desired quality.In this case, if judge and not satisfy desired quality, then method for example advances to the mark that forms mark 18 and forms step S110, advances to thickness identification step S208 and step subsequently then, so that polished glass substrate 12 again.This makes it possible to not lavishly, more effectively uses glass substrate 12.For example, under the situation of the glass substrate of the mask plate that is used for ArF excimer laser exposure, desired quality is meant the specification relevant with glass substrate that influences pattern transfer in the glass substrate 12, for example surfaceness is 0.2nm or littler with regard to RMS, flatness is 0.5 μ m or littler, does not perhaps have 0.2 μ m or bigger defective.
Fig. 4 is the process flow diagram that an example that is used for the manufacture method by making new mask plate 10 with the mask plate 10 made is shown.In this example, mask plate 10 has the chemical reinforcing type etchant resist that forms etchant resist 16.
In this example, at first for example by recovering the mask plate 10 that (preparation process S302) prepares to have made from the mask mark.For example, preparation process S302 is beginning to prepare mask plate 10 afterwards as the mask plate of having made 10 through the schedule time (for example one month or longer) from applying etchant resist 16.Preparation process S302 can prepare respectively polytype mask plate 10 of forming with different etchant resists 16.
Then, the etchant resist 16 of mask plate 10 is divested (etchant resist strip step S304).In etchant resist strip step S304, the etchant resist 16 of polytype mask plate 10 can be divested simultaneously.
Then, read mark 18, and, be chosen in and divest the etchant resist 16 (etchant resist is selected step S306) that on mask plate 10, forms before the etchant resist based on the mark 18 that reads.Then, selected etchant resist 16 coated (formation) (etchant resist forms step S308 again) on mask pattern film 14.
Therefore, even take place under the situation of deterioration and so at the etchant resist 16 of the mask plate of having made 10, mask plate 10 also can be by recycling effectively.In addition, can simplify the step management by usage flag 18.
(example 1)
According to example 1,100 mask plate glass substrate that are used for the exposure of ArF excimer laser have been made.On an end face of each glass substrate, with carbon dioxide (CO
2) gas laser forms mark shown in Figure 1B by laser labelling.The output of laser labelling is set to the 20mW/ emission, and each pit forms by once launching.The size of whole mark is set to 3.25mm * 3.5mm.Except the formation of mark, other steps are identical with the step of making the known mask plate glass substrate that is used for the exposure of ArF excimer laser.These glass substrate are verified in the substrate checking procedure, and they all satisfy the desired quality of mask plate glass substrate that is used for the exposure of ArF excimer laser.
(comparative example)
Comparative example is identical with Fig. 1, only uses the YAG laser instrument to replace carbon dioxide (CO
2) gas laser.According to comparative example, 100 mask plate glass substrate that are used for the exposure of ArF excimer laser have been made.These glass substrate are verified in the substrate checking procedure, and have only 27% (i.e. 27 glass substrate) to satisfy the desired quality of mask plate glass substrate that is used for the exposure of ArF excimer laser among them.
(example 2)
Under the condition identical, on side, form mark as the end face of each mask plate glass substrate with example 1.Each glass substrate is of a size of 152.4mm * 152.4mm * 6.35mm.As shown in the figure, mark is formed the size with 3mm * 3mm, and its center be positioned at a corner of the formation glass otch sign of glass substrate at a distance of 7mm and with the first type surface of glass substrate at a distance of the 3.18mm place.The A/F L1 that forms each pit of mark is 170 μ m, and its depth D is 17 μ m, thereby the ratio between the A/F and the degree of depth (L1/D) is 10.After the pit that formation serves as a mark, come the end face of cleaning glass substrate by using cleaning brush, and carry out fault detection for glass substrate subsequently.As a result, they all satisfy the desired quality of mask plate glass substrate that is used for the exposure of ArF excimer laser.In addition, on each glass substrate, form the mask pattern film, on the mask pattern film, form etchant resist (average thickness: 3000 ) by spin coating method then.Thereby, obtain to be used for the mask plate that the ArF excimer laser exposes.The thickness uniformity coefficient is measured in the plane of the etchant resist of each mask plate.The thickness uniformity coefficient draws in the following manner in the plane of etchant resist.By using spectral reflectance type thickness gages (by the AFT6100M of Nanometrics Japan Ltd. manufacturing), go up evenly distributed (11 * 11=121 point) in the assurance zone (mask pattern forms the zone) of the whole 132mm * 132mm of glass substrate center and locate to measure etchant resist thickness, thus the interior thickness distribution (thickness data of each measurement point) of out-of-plane.According to thickness profile data in the plane that draws, get thickness uniformity coefficient in the out-of-plane by " (maximum ga(u)ge value)-(minimum thickness value)=(thickness uniformity coefficient in the plane) ".As a result, the thickness uniformity coefficient is little of 22 in the plane of each etchant resist, from but quite outstanding.In addition, make mask by using each mask plate, and the CD precision of the mask that is obtained satisfies the desired quality of mask that is used for the exposure of ArF excimer laser.
Though to have described the present invention with regard to preferred embodiment, teachings of the present invention is not limited thereto.Those skilled in the art's easy to understand, various modifications or improvement can be added in the previous embodiment.Can find out obviously in the elaboration of accessory rights claim that the pattern that is added with these modifications or improvements also can be included in the teachings of the present invention.
The present invention for example is applicable to mask plate glass substrate and mask plate.
Claims (22)
1. method of making the mask plate glass substrate comprises:
Mark forms step, and this step uses the pit of marking, this mark to be used for identifying or managing described mask plate glass substrate with on the mirrored surface of laser radiation in the lip-deep zone that transfer printing is not had influence of described mask plate glass substrate thereby form.
2. method according to claim 1 also comprises:
Preparation is about the step of the substrate information of described mask plate glass substrate,
Wherein said substrate information is relevant with described mark.
3. method according to claim 2, wherein:
Described substrate information is at least one the information in physical attribute, chemical attribute, optical properties, format surface, surface configuration, material and the defective that comprises described mask plate glass substrate.
4. method of making mask plate comprises:
Film forms step, and this step forms the mask pattern film on the first type surface of the mask plate glass substrate that obtains by method according to claim 1.
5. method of making mask plate comprises:
Film forms step, and this step forms the mask pattern film on the first type surface of glass substrate;
Mark forms step, this step is with on the mirrored surface of laser radiation in the lip-deep zone that transfer printing is not had influence of described glass substrate, thereby form with the pit of marking the mask plate that this mark is used to identify or manage described glass substrate and/or utilizes the mask pattern film on the described glass substrate to form.
6. method according to claim 5 also comprises:
Prepared the step about the substrate information of described glass substrate before described film forms step, described mark is relevant with described substrate information, and
The film determining step, this step is determined the mask pattern film that will form based on the substrate information that reads from described mark,
Wherein said film forms step and forms determined mask pattern film in the described film determining step.
7. method according to claim 5 also comprises:
Thin-film information preparation process, this step are prepared the thin-film information about described mask pattern film after described film forms step,
Wherein said mark is relevant with the thin-film information that obtains in described thin-film information preparation process.
8. method according to claim 7, wherein:
Described thin-film information is at least one the information in physical attribute, chemical attribute, electrical properties, optical properties, format surface, material, defective and the film formation condition that comprises described mask pattern film.
9. mask plate manufacture method according to claim 5 also comprises:
Etchant resist forms step, and this step forms etchant resist on described mask pattern film after described film forms step, and
Etchant resist information preparation process, this step is prepared the etchant resist information about described etchant resist,
Wherein said mark is relevant with the etchant resist information that obtains in described etchant resist information preparation process.
10. method according to claim 9, wherein:
Described etchant resist information is at least one the information in physical attribute, chemical attribute, format surface, material, defective and the film formation condition that comprises described etchant resist.
11. a mask plate manufacture method that is used for obtaining by the mask plate that uses to have made new mask plate, the wherein said mask plate of having made have mask pattern film on the mask plate glass substrate and the etchant resist on the described mask pattern film,
Wherein said mask plate glass substrate be on the surface of described mask plate glass substrate to transfer printing do not have the influence the zone in mirrored surface on form, wherein has the mark that is used to identify or manage described mask plate glass substrate and/or described mask plate, described mark is formed by laser radiation, and
Described mark is relevant with at least one information in comprising following information: about the substrate information of described mask plate glass substrate, and about the thin-film information of described mask pattern film, and about the etchant resist information of described etchant resist,
Described method comprises:
Film strip step, this step divest the etchant resist of the described mask plate of having made or the etchant resist and the mask pattern film of the described mask plate of having made;
Film forms step again, and this step forms mask pattern film and the etchant resist that is different from the etchant resist of the film that is divested or is different from the film that is divested; And
Acquisition is about at least one the step in the thin-film information of the etchant resist information that forms the etchant resist that forms in the step at described film again and mask pattern film,
In wherein said etchant resist information and the described thin-film information at least one is relevant with described mark.
12. mask plate manufacture method according to claim 11, wherein:
Described mark has pit shape, and this pit shape is by laser radiation is not had to form on the mirrored surface in the zone of influence to transfer printing to the surface of described mask plate glass substrate.
13. method according to claim 11, wherein:
Described etchant resist is the chemical reinforcing type etchant resist, and
Begin to be prepared the mask plate of having made as described from applying described etchant resist through a mask plate after the schedule time.
14. the method for a production mask comprises:
Printing is by the step of the mask pattern film of the mask plate that method obtained of claim 5, thereby forms mask pattern on described mask plate glass substrate.
15. a mask plate glass substrate comprises:
Pit on the mirrored surface in the zone that on the surface of described mask plate glass substrate transfer printing is not had to influence,
Described pit forms by laser radiation, and is used as mark, and this mark is used to identify or manage described mask plate glass substrate and/or with the mask plate of the formation of the mask pattern film on the described mask plate glass substrate.
16. mask plate glass substrate according to claim 15, wherein:
Described pit be described mask plate glass substrate with the perpendicular end face of first type surface on, form in the zone outside the check light light path, wherein said mask pattern film forms at described first type surface place, and described check light checks that at least being present in pattern forms defective in the zone.
17. a mask plate glass substrate comprises:
Described mask plate glass substrate with the perpendicular end face of its first type surface on, with four angles of described mask plate glass substrate in corresponding one at a distance of 10mm or shorter zone, get rid of the pit of both sides in the zone of 1.2mm with described first type surface simultaneously, the mask pattern film that wherein is used to form pattern transferring will be formed on the described first type surface
Described pit forms by laser radiation, and is used as mark, and this mark is used to identify or manage described mask plate glass substrate and/or with the mask plate of the formation of the mask pattern film on the described mask plate glass substrate.
18. according to claim 15 or 17 described mask plate glass substrate, wherein:
The A/F of described pit (L1) is 150 μ m or bigger,
The degree of depth of described pit (D) is 10 μ m or bigger, and
Ratio (L1/D) between the described A/F and the described degree of depth is 10 or bigger.
19. according to claim 15 or 17 described mask plate glass substrate, wherein:
Described mark is relevant with substrate information about described mask plate glass substrate.
20. a mask plate comprises:
According to claim 15 or 17 described mask plate glass substrate, and
To be formed the mask pattern film of mask pattern, described mask pattern film forms on described mask plate glass substrate.
21. mask plate according to claim 20, wherein:
Described mark is relevant with at least one information in comprising following information: about the substrate information of described mask plate glass substrate, about the thin-film information of described mask pattern film, and about the etchant resist information of the etchant resist that forms on the described mask pattern film.
22. a mask comprises:
Described mask plate glass substrate according to claim 15; And
Be formed on the mask pattern on the described mask plate glass substrate.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP200596976 | 2005-03-30 | ||
| JP2005096976 | 2005-03-30 | ||
| JP2005377140 | 2005-12-28 |
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| CN1841189A true CN1841189A (en) | 2006-10-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200610071565 Pending CN1841189A (en) | 2005-03-30 | 2006-03-30 | Mask blank glass substrate manufacturing method, mask blank manufacturing method, mask manufacturing method, mask blank glass substrate, mask blank, and mask |
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| Country | Link |
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| JP (2) | JP5142231B2 (en) |
| CN (1) | CN1841189A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101364042B (en) * | 2007-08-07 | 2012-10-24 | Hoya株式会社 | Substrate and mask blank substrate for manufacturing mask blank substrate and mask manufacturing method |
| CN104937619A (en) * | 2012-11-28 | 2015-09-23 | 法国圣戈班玻璃厂 | Method and system for identifying defects in glass |
| CN106019814A (en) * | 2016-05-30 | 2016-10-12 | 京东方科技集团股份有限公司 | Mask plate and preparation method for film layer |
| CN107452716A (en) * | 2016-05-25 | 2017-12-08 | 英飞凌科技股份有限公司 | For forming the method and semiconductor devices of semiconductor devices |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6066802B2 (en) * | 2013-03-29 | 2017-01-25 | Hoya株式会社 | Mask blank manufacturing method and transfer mask manufacturing method |
| JP6136072B2 (en) * | 2013-11-06 | 2017-05-31 | 日本電気硝子株式会社 | Thin glass and thin glass manufacturing method |
| DE102016123865A1 (en) | 2016-12-08 | 2018-06-14 | Schott Ag | Process for the further processing of a glass tube semifinished product including a thermal deformation |
| DE102016124833A1 (en) | 2016-12-19 | 2018-06-21 | Schott Ag | Method for producing a hollow glass product from a glass tube semifinished product with markings, as well as uses thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6080450U (en) * | 1983-11-07 | 1985-06-04 | 日本電気株式会社 | photomask substrate |
| JPS6241145U (en) * | 1985-08-30 | 1987-03-12 | ||
| JP3673626B2 (en) * | 1997-10-24 | 2005-07-20 | Ｈｏｙａ株式会社 | Non-uniformity inspection method and apparatus for translucent material |
| JP3673632B2 (en) * | 1997-12-26 | 2005-07-20 | Ｈｏｙａ株式会社 | Non-uniformity inspection method and apparatus for translucent material, and transparent substrate |
| JP3673631B2 (en) * | 1997-12-26 | 2005-07-20 | Ｈｏｙａ株式会社 | Non-uniformity inspection method and apparatus for translucent material |
| JP2002116533A (en) * | 2000-10-11 | 2002-04-19 | Dainippon Printing Co Ltd | Blanks for photomask with area code, photomask with area code and method for producing photomask |
| CN100580549C (en) * | 2002-12-03 | 2010-01-13 | Hoya株式会社 | Photomask blank and photomask |
| TWI244120B (en) * | 2003-03-28 | 2005-11-21 | Hoya Corp | Method of manufacturing a mask blank |
| JP3973103B2 (en) * | 2003-03-31 | 2007-09-12 | Ｈｏｙａ株式会社 | Manufacturing method of mask blanks |
-
2006
- 2006-03-30 CN CN 200610071565 patent/CN1841189A/en active Pending
-
2010
- 2010-11-15 JP JP2010254757A patent/JP5142231B2/en active Active
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2012
- 2012-05-23 JP JP2012117218A patent/JP5477875B2/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101364042B (en) * | 2007-08-07 | 2012-10-24 | Hoya株式会社 | Substrate and mask blank substrate for manufacturing mask blank substrate and mask manufacturing method |
| CN104937619A (en) * | 2012-11-28 | 2015-09-23 | 法国圣戈班玻璃厂 | Method and system for identifying defects in glass |
| CN107452716A (en) * | 2016-05-25 | 2017-12-08 | 英飞凌科技股份有限公司 | For forming the method and semiconductor devices of semiconductor devices |
| CN107452716B (en) * | 2016-05-25 | 2020-10-16 | 英飞凌科技股份有限公司 | Method for forming semiconductor device and semiconductor device |
| CN106019814A (en) * | 2016-05-30 | 2016-10-12 | 京东方科技集团股份有限公司 | Mask plate and preparation method for film layer |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5142231B2 (en) | 2013-02-13 |
| JP2011070214A (en) | 2011-04-07 |
| JP5477875B2 (en) | 2014-04-23 |
| JP2012190044A (en) | 2012-10-04 |
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