TW200805452A - Method of making a low-defect-density epitaxial substrate and the product made therefrom - Google Patents

Method of making a low-defect-density epitaxial substrate and the product made therefrom Download PDF

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Publication number
TW200805452A
TW200805452A TW095124658A TW95124658A TW200805452A TW 200805452 A TW200805452 A TW 200805452A TW 095124658 A TW095124658 A TW 095124658A TW 95124658 A TW95124658 A TW 95124658A TW 200805452 A TW200805452 A TW 200805452A
Authority
TW
Taiwan
Prior art keywords
layer
substrate
epitaxial
defect density
low
Prior art date
Application number
TW095124658A
Other languages
English (en)
Chinese (zh)
Other versions
TWI323006B (https=
Inventor
Dong-Sing Wuu
Ray-Hua Horng
Woei-Kai Wang
Kuo-Sheng Wen
Original Assignee
Nat Univ Chung Hsing
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nat Univ Chung Hsing filed Critical Nat Univ Chung Hsing
Priority to TW095124658A priority Critical patent/TW200805452A/zh
Priority to US11/646,319 priority patent/US20080006829A1/en
Publication of TW200805452A publication Critical patent/TW200805452A/zh
Application granted granted Critical
Publication of TWI323006B publication Critical patent/TWI323006B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/276—Lateral overgrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H10P14/272—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition using mask materials other than SiO2 or SiN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials

Landscapes

  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW095124658A 2006-07-06 2006-07-06 Method of making a low-defect-density epitaxial substrate and the product made therefrom TW200805452A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW095124658A TW200805452A (en) 2006-07-06 2006-07-06 Method of making a low-defect-density epitaxial substrate and the product made therefrom
US11/646,319 US20080006829A1 (en) 2006-07-06 2006-12-28 Semiconductor layered structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW095124658A TW200805452A (en) 2006-07-06 2006-07-06 Method of making a low-defect-density epitaxial substrate and the product made therefrom

Publications (2)

Publication Number Publication Date
TW200805452A true TW200805452A (en) 2008-01-16
TWI323006B TWI323006B (https=) 2010-04-01

Family

ID=38918348

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095124658A TW200805452A (en) 2006-07-06 2006-07-06 Method of making a low-defect-density epitaxial substrate and the product made therefrom

Country Status (2)

Country Link
US (1) US20080006829A1 (https=)
TW (1) TW200805452A (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI397114B (zh) * 2010-07-13 2013-05-21 Univ Nat Chunghsing Method for manufacturing epitaxial substrate
TWI466287B (zh) * 2010-11-22 2014-12-21 國立中興大學 Substrate for epitaxy and its manufacturing method
JP2013089741A (ja) * 2011-10-18 2013-05-13 Renesas Electronics Corp 半導体装置、半導体基板、半導体装置の製造方法、及び半導体基板の製造方法
KR20130076314A (ko) * 2011-12-28 2013-07-08 삼성전자주식회사 파워소자 및 이의 제조방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1159750C (zh) * 1997-04-11 2004-07-28 日亚化学工业株式会社 氮化物半导体的生长方法
US6521514B1 (en) * 1999-11-17 2003-02-18 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates
KR100512580B1 (ko) * 2003-12-31 2005-09-06 엘지전자 주식회사 결함이 적은 질화물 반도체 박막 성장 방법

Also Published As

Publication number Publication date
TWI323006B (https=) 2010-04-01
US20080006829A1 (en) 2008-01-10

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