TW200802720A - Engineering strain in thick strained-SOI substrates - Google Patents

Engineering strain in thick strained-SOI substrates

Info

Publication number
TW200802720A
TW200802720A TW096114344A TW96114344A TW200802720A TW 200802720 A TW200802720 A TW 200802720A TW 096114344 A TW096114344 A TW 096114344A TW 96114344 A TW96114344 A TW 96114344A TW 200802720 A TW200802720 A TW 200802720A
Authority
TW
Taiwan
Prior art keywords
strain
region
wafer
active layer
engineering strain
Prior art date
Application number
TW096114344A
Other languages
English (en)
Inventor
Voon-Yew Thean
Victor H Vartanian
Brian A Winstead
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of TW200802720A publication Critical patent/TW200802720A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823481—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823412—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
  • Element Separation (AREA)
TW096114344A 2006-05-30 2007-04-24 Engineering strain in thick strained-SOI substrates TW200802720A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/420,849 US7468313B2 (en) 2006-05-30 2006-05-30 Engineering strain in thick strained-SOI substrates

Publications (1)

Publication Number Publication Date
TW200802720A true TW200802720A (en) 2008-01-01

Family

ID=38790771

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096114344A TW200802720A (en) 2006-05-30 2007-04-24 Engineering strain in thick strained-SOI substrates

Country Status (6)

Country Link
US (1) US7468313B2 (zh)
JP (1) JP2009539262A (zh)
KR (1) KR20090015941A (zh)
CN (1) CN101454894B (zh)
TW (1) TW200802720A (zh)
WO (1) WO2007143289A1 (zh)

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US8016941B2 (en) 2007-02-05 2011-09-13 Infineon Technologies Ag Method and apparatus for manufacturing a semiconductor
US9466719B2 (en) 2009-07-15 2016-10-11 Qualcomm Incorporated Semiconductor-on-insulator with back side strain topology
US8288218B2 (en) * 2010-01-19 2012-10-16 International Business Machines Corporation Device structure, layout and fabrication method for uniaxially strained transistors
US10128269B2 (en) * 2013-11-08 2018-11-13 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and methods for a semiconductor structure having multiple semiconductor-device layers
FR3023411B1 (fr) * 2014-07-07 2017-12-22 Commissariat Energie Atomique Generation localisee de contrainte dans un substrat soi
US9165945B1 (en) * 2014-09-18 2015-10-20 Soitec Method for fabricating semiconductor structures including transistor channels having different strain states, and related semiconductor structures
US9219150B1 (en) 2014-09-18 2015-12-22 Soitec Method for fabricating semiconductor structures including fin structures with different strain states, and related semiconductor structures
US9209301B1 (en) 2014-09-18 2015-12-08 Soitec Method for fabricating semiconductor layers including transistor channels having different strain states, and related semiconductor layers
CN107112329B (zh) * 2014-11-13 2019-06-04 高通股份有限公司 具有背侧应变拓扑结构的绝缘体上覆半导体
CN106098612B (zh) * 2016-06-20 2020-01-31 西安电子科技大学 基于氮化硅应力薄膜与尺度效应的SiN埋绝缘层上晶圆级单轴应变Ge的制作方法
CN106098613B (zh) * 2016-06-20 2019-03-26 西安电子科技大学 基于非晶化与尺度效应的AlN埋绝缘层上晶圆级单轴应变SiGe的制作方法
CN106098611B (zh) * 2016-06-20 2019-01-08 西安电子科技大学 基于氮化硅应力薄膜与尺度效应的晶圆级单轴应变sgoi的制作方法
CN106098609B (zh) * 2016-06-20 2019-03-26 西安电子科技大学 基于非晶化与尺度效应的AlN埋绝缘层上晶圆级单轴应变Si的制作方法
CN106098608B (zh) * 2016-06-20 2018-11-16 西安电子科技大学 基于氮化硅应力薄膜与尺度效应的SiN埋绝缘层上晶圆级单轴应变SiGe的制作方法
CN106067441B (zh) * 2016-06-20 2019-01-29 西安电子科技大学 基于非晶化与尺度效应的晶圆级单轴应变sgoi的制作方法
CN105938814B (zh) * 2016-06-20 2018-09-11 西安电子科技大学 基于氮化硅应力薄膜与尺度效应的AlN埋绝缘层上晶圆级单轴应变Si的制作方法
CN106098610B (zh) * 2016-06-20 2019-01-08 西安电子科技大学 基于氮化硅应力薄膜与尺度效应的AlN埋绝缘层上晶圆级单轴应变Ge的制作方法
US20210407996A1 (en) * 2020-06-26 2021-12-30 Ashish Agrawal Gate-all-around integrated circuit structures having strained dual nanoribbon channel structures

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Publication number Priority date Publication date Assignee Title
US6391695B1 (en) * 2000-08-07 2002-05-21 Advanced Micro Devices, Inc. Double-gate transistor formed in a thermal process
US6649480B2 (en) * 2000-12-04 2003-11-18 Amberwave Systems Corporation Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs
EP1428262A2 (en) * 2001-09-21 2004-06-16 Amberwave Systems Corporation Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
US6689671B1 (en) * 2002-05-22 2004-02-10 Advanced Micro Devices, Inc. Low temperature solid-phase epitaxy fabrication process for MOS devices built on strained semiconductor substrate
US6743687B1 (en) * 2002-09-26 2004-06-01 Advanced Micro Devices, Inc. Abrupt source/drain extensions for CMOS transistors
US6774015B1 (en) * 2002-12-19 2004-08-10 International Business Machines Corporation Strained silicon-on-insulator (SSOI) and method to form the same
DE10261307B4 (de) * 2002-12-27 2010-11-11 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung einer Spannungsoberflächenschicht in einem Halbleiterelement
US20050116360A1 (en) 2003-12-01 2005-06-02 Chien-Chao Huang Complementary field-effect transistors and methods of manufacture
TWI279852B (en) * 2004-03-16 2007-04-21 Imec Inter Uni Micro Electr Method of manufacturing a semiconductor on a silicon on insulator (SOI) substrate using solid epitaxial regrowth (SPER) and semiconductor device made thereby
US7125785B2 (en) 2004-06-14 2006-10-24 International Business Machines Corporation Mixed orientation and mixed material semiconductor-on-insulator wafer
DE102005041225B3 (de) * 2005-08-31 2007-04-26 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung vertiefter verformter Drain/Source-Gebiete in NMOS- und PMOS-Transistoren

Also Published As

Publication number Publication date
WO2007143289A1 (en) 2007-12-13
KR20090015941A (ko) 2009-02-12
CN101454894A (zh) 2009-06-10
US20070281435A1 (en) 2007-12-06
US7468313B2 (en) 2008-12-23
CN101454894B (zh) 2011-11-16
JP2009539262A (ja) 2009-11-12

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