TW200746638A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- TW200746638A TW200746638A TW095144419A TW95144419A TW200746638A TW 200746638 A TW200746638 A TW 200746638A TW 095144419 A TW095144419 A TW 095144419A TW 95144419 A TW95144419 A TW 95144419A TW 200746638 A TW200746638 A TW 200746638A
- Authority
- TW
- Taiwan
- Prior art keywords
- power supply
- supply voltage
- input signal
- circuit
- analog input
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
- H01L27/0285—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements bias arrangements for gate electrode of field effect transistors, e.g. RC networks, voltage partitioning circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
- Tone Control, Compression And Expansion, Limiting Amplitude (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006005514A JP4798610B2 (ja) | 2006-01-13 | 2006-01-13 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200746638A true TW200746638A (en) | 2007-12-16 |
TWI445308B TWI445308B (zh) | 2014-07-11 |
Family
ID=38321872
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095144419A TWI445308B (zh) | 2006-01-13 | 2006-11-30 | Semiconductor device |
Country Status (3)
Country | Link |
---|---|
US (1) | US7643261B2 (zh) |
JP (1) | JP4798610B2 (zh) |
TW (1) | TWI445308B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI393246B (zh) * | 2009-07-10 | 2013-04-11 | Fitipower Integrated Tech Inc | 靜電保護裝置 |
TWI635294B (zh) * | 2014-03-05 | 2018-09-11 | 韓商愛思開海力士有限公司 | 半導體裝置及具有該半導體裝置之半導體系統 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20080019729A (ko) * | 2004-04-02 | 2008-03-04 | 실버브룩 리서치 피티와이 리미티드 | 모놀리식 집적회로 |
DE102009018054B4 (de) | 2009-04-21 | 2018-11-29 | Infineon Technologies Austria Ag | Lateraler HEMT und Verfahren zur Herstellung eines lateralen HEMT |
JP4875196B2 (ja) * | 2009-11-06 | 2012-02-15 | 株式会社東芝 | 障害予知ユニット |
JP5867281B2 (ja) * | 2012-05-09 | 2016-02-24 | ソニー株式会社 | ゲイン制御回路および受信システム |
CN106656158B (zh) * | 2017-01-09 | 2023-05-09 | 四川埃姆克伺服科技有限公司 | 一种用于伺服控制器的电流型模拟量输入接口电路 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01125014A (ja) * | 1987-11-09 | 1989-05-17 | Sharp Corp | 保護回路 |
JP2765319B2 (ja) * | 1991-11-15 | 1998-06-11 | 日本電気株式会社 | 定電圧回路 |
JPH05327460A (ja) * | 1992-05-18 | 1993-12-10 | Mitsubishi Electric Corp | 入力回路装置 |
JP2809020B2 (ja) * | 1992-12-07 | 1998-10-08 | 日本電気株式会社 | 入出力保護回路 |
US5530612A (en) * | 1994-03-28 | 1996-06-25 | Intel Corporation | Electrostatic discharge protection circuits using biased and terminated PNP transistor chains |
TW289153B (zh) * | 1994-09-26 | 1996-10-21 | Ibm | |
JPH10145219A (ja) * | 1996-11-06 | 1998-05-29 | Nkk Corp | 半導体入力回路およびその製造方法 |
US6624998B2 (en) * | 2000-01-24 | 2003-09-23 | Medtronic, Inc. | Electrostatic discharge protection scheme in low potential drop environments |
DE10050962A1 (de) * | 2000-10-13 | 2002-04-18 | Bosch Gmbh Robert | Verfahren und Vorrichtung zur Erfassung von Signalen |
JP2002251750A (ja) * | 2001-02-27 | 2002-09-06 | Matsushita Electric Ind Co Ltd | フィード制御量の補正方法 |
JP3682859B2 (ja) * | 2001-05-11 | 2005-08-17 | ソニー株式会社 | 記録装置および方法、並びにプログラム |
JP3875912B2 (ja) * | 2002-05-09 | 2007-01-31 | ソニー株式会社 | 光ディスク記録方法、光ディスク記録装置及び情報記録媒体 |
JP2004222119A (ja) * | 2003-01-17 | 2004-08-05 | Renesas Technology Corp | 半導体集積回路 |
JP2004227731A (ja) * | 2003-01-27 | 2004-08-12 | Hitachi Ltd | 半導体集積回路および媒体記録再生装置 |
JP4531343B2 (ja) * | 2003-03-26 | 2010-08-25 | 株式会社半導体エネルギー研究所 | 駆動回路 |
JP2005166147A (ja) * | 2003-12-01 | 2005-06-23 | Yamaha Corp | 光ディスクドライブ、光ディスク装置およびおよび光ディスクデバイスドライバプログラム |
JP4300994B2 (ja) * | 2003-12-18 | 2009-07-22 | ソニー株式会社 | 記録装置、記録方法、再生装置、再生方法 |
US7205817B1 (en) * | 2004-03-30 | 2007-04-17 | Maxim Integrated Products, Inc. | Analog control integrated FET based variable attenuators |
JP4390070B2 (ja) * | 2005-01-26 | 2009-12-24 | 株式会社島津製作所 | 材料試験機 |
-
2006
- 2006-01-13 JP JP2006005514A patent/JP4798610B2/ja active Active
- 2006-11-30 TW TW095144419A patent/TWI445308B/zh active
- 2006-12-27 US US11/616,494 patent/US7643261B2/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI393246B (zh) * | 2009-07-10 | 2013-04-11 | Fitipower Integrated Tech Inc | 靜電保護裝置 |
TWI635294B (zh) * | 2014-03-05 | 2018-09-11 | 韓商愛思開海力士有限公司 | 半導體裝置及具有該半導體裝置之半導體系統 |
Also Published As
Publication number | Publication date |
---|---|
US20070177328A1 (en) | 2007-08-02 |
TWI445308B (zh) | 2014-07-11 |
JP2007189474A (ja) | 2007-07-26 |
US7643261B2 (en) | 2010-01-05 |
JP4798610B2 (ja) | 2011-10-19 |
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