TW200746638A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
TW200746638A
TW200746638A TW095144419A TW95144419A TW200746638A TW 200746638 A TW200746638 A TW 200746638A TW 095144419 A TW095144419 A TW 095144419A TW 95144419 A TW95144419 A TW 95144419A TW 200746638 A TW200746638 A TW 200746638A
Authority
TW
Taiwan
Prior art keywords
power supply
supply voltage
input signal
circuit
analog input
Prior art date
Application number
TW095144419A
Other languages
English (en)
Other versions
TWI445308B (zh
Inventor
Hiroshi Ide
Satoshi Fujita
Takehiko Umeyama
Original Assignee
Renesas Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Tech Corp filed Critical Renesas Tech Corp
Publication of TW200746638A publication Critical patent/TW200746638A/zh
Application granted granted Critical
Publication of TWI445308B publication Critical patent/TWI445308B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • H01L27/0285—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements bias arrangements for gate electrode of field effect transistors, e.g. RC networks, voltage partitioning circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Tone Control, Compression And Expansion, Limiting Amplitude (AREA)
  • Amplifiers (AREA)
TW095144419A 2006-01-13 2006-11-30 Semiconductor device TWI445308B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006005514A JP4798610B2 (ja) 2006-01-13 2006-01-13 半導体装置

Publications (2)

Publication Number Publication Date
TW200746638A true TW200746638A (en) 2007-12-16
TWI445308B TWI445308B (zh) 2014-07-11

Family

ID=38321872

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095144419A TWI445308B (zh) 2006-01-13 2006-11-30 Semiconductor device

Country Status (3)

Country Link
US (1) US7643261B2 (zh)
JP (1) JP4798610B2 (zh)
TW (1) TWI445308B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI393246B (zh) * 2009-07-10 2013-04-11 Fitipower Integrated Tech Inc 靜電保護裝置
TWI635294B (zh) * 2014-03-05 2018-09-11 韓商愛思開海力士有限公司 半導體裝置及具有該半導體裝置之半導體系統

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080019729A (ko) * 2004-04-02 2008-03-04 실버브룩 리서치 피티와이 리미티드 모놀리식 집적회로
DE102009018054B4 (de) 2009-04-21 2018-11-29 Infineon Technologies Austria Ag Lateraler HEMT und Verfahren zur Herstellung eines lateralen HEMT
JP4875196B2 (ja) * 2009-11-06 2012-02-15 株式会社東芝 障害予知ユニット
JP5867281B2 (ja) * 2012-05-09 2016-02-24 ソニー株式会社 ゲイン制御回路および受信システム
CN106656158B (zh) * 2017-01-09 2023-05-09 四川埃姆克伺服科技有限公司 一种用于伺服控制器的电流型模拟量输入接口电路

Family Cites Families (19)

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Publication number Priority date Publication date Assignee Title
JPH01125014A (ja) * 1987-11-09 1989-05-17 Sharp Corp 保護回路
JP2765319B2 (ja) * 1991-11-15 1998-06-11 日本電気株式会社 定電圧回路
JPH05327460A (ja) * 1992-05-18 1993-12-10 Mitsubishi Electric Corp 入力回路装置
JP2809020B2 (ja) * 1992-12-07 1998-10-08 日本電気株式会社 入出力保護回路
US5530612A (en) * 1994-03-28 1996-06-25 Intel Corporation Electrostatic discharge protection circuits using biased and terminated PNP transistor chains
TW289153B (zh) * 1994-09-26 1996-10-21 Ibm
JPH10145219A (ja) * 1996-11-06 1998-05-29 Nkk Corp 半導体入力回路およびその製造方法
US6624998B2 (en) * 2000-01-24 2003-09-23 Medtronic, Inc. Electrostatic discharge protection scheme in low potential drop environments
DE10050962A1 (de) * 2000-10-13 2002-04-18 Bosch Gmbh Robert Verfahren und Vorrichtung zur Erfassung von Signalen
JP2002251750A (ja) * 2001-02-27 2002-09-06 Matsushita Electric Ind Co Ltd フィード制御量の補正方法
JP3682859B2 (ja) * 2001-05-11 2005-08-17 ソニー株式会社 記録装置および方法、並びにプログラム
JP3875912B2 (ja) * 2002-05-09 2007-01-31 ソニー株式会社 光ディスク記録方法、光ディスク記録装置及び情報記録媒体
JP2004222119A (ja) * 2003-01-17 2004-08-05 Renesas Technology Corp 半導体集積回路
JP2004227731A (ja) * 2003-01-27 2004-08-12 Hitachi Ltd 半導体集積回路および媒体記録再生装置
JP4531343B2 (ja) * 2003-03-26 2010-08-25 株式会社半導体エネルギー研究所 駆動回路
JP2005166147A (ja) * 2003-12-01 2005-06-23 Yamaha Corp 光ディスクドライブ、光ディスク装置およびおよび光ディスクデバイスドライバプログラム
JP4300994B2 (ja) * 2003-12-18 2009-07-22 ソニー株式会社 記録装置、記録方法、再生装置、再生方法
US7205817B1 (en) * 2004-03-30 2007-04-17 Maxim Integrated Products, Inc. Analog control integrated FET based variable attenuators
JP4390070B2 (ja) * 2005-01-26 2009-12-24 株式会社島津製作所 材料試験機

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI393246B (zh) * 2009-07-10 2013-04-11 Fitipower Integrated Tech Inc 靜電保護裝置
TWI635294B (zh) * 2014-03-05 2018-09-11 韓商愛思開海力士有限公司 半導體裝置及具有該半導體裝置之半導體系統

Also Published As

Publication number Publication date
US20070177328A1 (en) 2007-08-02
TWI445308B (zh) 2014-07-11
JP2007189474A (ja) 2007-07-26
US7643261B2 (en) 2010-01-05
JP4798610B2 (ja) 2011-10-19

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