TW200746236A - Plasma treatment method and plasma apparatus - Google Patents

Plasma treatment method and plasma apparatus

Info

Publication number
TW200746236A
TW200746236A TW095142559A TW95142559A TW200746236A TW 200746236 A TW200746236 A TW 200746236A TW 095142559 A TW095142559 A TW 095142559A TW 95142559 A TW95142559 A TW 95142559A TW 200746236 A TW200746236 A TW 200746236A
Authority
TW
Taiwan
Prior art keywords
tray
substrate
plasma
heat
adhesive member
Prior art date
Application number
TW095142559A
Other languages
Chinese (zh)
Other versions
TWI387996B (en
Inventor
Tomoyasu Nishimiya
Hiromichi Ogiya
Michihiro Hiramoto
Original Assignee
Samco Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samco Inc filed Critical Samco Inc
Publication of TW200746236A publication Critical patent/TW200746236A/en
Application granted granted Critical
Publication of TWI387996B publication Critical patent/TWI387996B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32825—Working under atmospheric pressure or higher
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements

Abstract

To provide a method which certainly fixes a member to be treated (substrate) on a tray in plasma treatment and before/after it to elevate treatability and operativity, and can easily strip the substrate from the tray when necessary; and to provide its apparatus. The plasma treatment method, which mounts the substrate positioned on the tray on a supporting bed to treat the surface of the substrate by plasma, bonds the substrate to the tray with a heat-strippable adhesive member. A foam strippable sheet can be preferably used as a heat- strippable adhesive member. As the heat strippable adhesive member usually has adhesion, the tray and the substrate are exactly fixed before/after plasma, and a good operativity can be obtained, moreover, after treatment, the substrate is easily stripped from the tray by only heating the tray higher than a predetermined stripping temperature.
TW095142559A 2005-12-27 2006-11-17 A plasma processing method and a plasma processing apparatus TWI387996B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005376568 2005-12-27
JP2006196558A JP4905934B2 (en) 2005-12-27 2006-07-19 Plasma processing method and plasma apparatus

Publications (2)

Publication Number Publication Date
TW200746236A true TW200746236A (en) 2007-12-16
TWI387996B TWI387996B (en) 2013-03-01

Family

ID=38455632

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095142559A TWI387996B (en) 2005-12-27 2006-11-17 A plasma processing method and a plasma processing apparatus

Country Status (4)

Country Link
JP (1) JP4905934B2 (en)
KR (1) KR101310397B1 (en)
CN (1) CN1992162B (en)
TW (1) TWI387996B (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5002505B2 (en) * 2008-03-26 2012-08-15 株式会社アルバック Transport tray and vacuum processing apparatus using the transport tray
JP5131762B2 (en) * 2008-05-09 2013-01-30 サムコ株式会社 Plasma processing method, plasma processing apparatus, and plasma processing tray
KR101331372B1 (en) 2009-02-18 2013-11-20 가부시키가이샤 알박 Wafer conveying tray and method of securing wafer on tray
WO2011135153A1 (en) 2010-04-29 2011-11-03 Upm Raflatac Oy Method for manufacturing an antenna component by etching
CN103590114B (en) * 2012-08-17 2016-08-31 北京北方微电子基地设备工艺研究中心有限责任公司 A kind of pallet fastener and plasma processing device
CN104515339B (en) * 2013-09-26 2017-01-04 正达国际光电股份有限公司 Cooling system
CN104614879B (en) * 2013-11-04 2018-03-27 苏州璨宇光学有限公司 The fixed structure of display device
JP2016092308A (en) * 2014-11-07 2016-05-23 株式会社アルバック Substrate temperature controller, substrate processing system, and substrate temperature control method
CN104835766B (en) * 2015-04-27 2018-06-26 沈阳拓荆科技有限公司 A kind of controllable temperature heating dish of snowflake shape surface texture
JP6572800B2 (en) 2016-02-26 2019-09-11 株式会社村田製作所 Vacuum equipment
JP2018182290A (en) * 2017-04-18 2018-11-15 日新イオン機器株式会社 Electrostatic chuck
CN108735647A (en) * 2017-04-18 2018-11-02 日新离子机器株式会社 Electrostatic chuck
CN107779819A (en) * 2017-11-02 2018-03-09 丰盛印刷（苏州）有限公司 Chip sputtering jig and method for sputtering
CN113324781A (en) * 2021-06-18 2021-08-31 山东中保康医疗器具有限公司 Centrifugal plasma separator and foam testing method of single plasma collector

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08139165A (en) * 1994-11-02 1996-05-31 Sumitomo Metal Mining Co Ltd Wafer sticking device
JP3339231B2 (en) * 1995-01-19 2002-10-28 富士電機株式会社 Method for manufacturing semiconductor device
JP3553204B2 (en) * 1995-04-28 2004-08-11 アネルバ株式会社 CVD equipment
JP2001210708A (en) * 2000-01-28 2001-08-03 Dowa Mining Co Ltd Substrate transfer method and tray therefor
JP2002322436A (en) * 2001-04-25 2002-11-08 Nitto Denko Corp Method and device for thermally peel the adherend
JP4284911B2 (en) * 2002-01-09 2009-06-24 ソニー株式会社 Element transfer method
JP3911174B2 (en) * 2002-03-01 2007-05-09 シャープ株式会社 Semiconductor device manufacturing method and semiconductor device
CN1228820C (en) * 2002-09-04 2005-11-23 东京毅力科创株式会社 Plasma processing appts, and its processing method
JP2004111533A (en) * 2002-09-17 2004-04-08 Tokyo Electron Ltd Electrostatic attraction apparatus
JP4179041B2 (en) * 2003-04-30 2008-11-12 株式会社島津製作所 Deposition device for organic EL protective film, manufacturing method, and organic EL element

Also Published As

Publication number Publication date
JP2007201404A (en) 2007-08-09
CN1992162A (en) 2007-07-04
KR101310397B1 (en) 2013-09-17
CN1992162B (en) 2010-08-11
JP4905934B2 (en) 2012-03-28
TWI387996B (en) 2013-03-01
KR20070069037A (en) 2007-07-02

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